Integrated circuit device and method of manufacturing the same

CN122935294APending Publication Date: 2026-10-16TAIWAN SEMICONDUCTOR MANUFACTURING CO LTD
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Patent Information

Application Number
CN202610431701.3
Authority / Receiving Office
CN · China
Patent Type
Applications(China)
Current Assignee / Owner
Priority Date
2025-07-10
Filing Date
2026-04-02
Publication Date
2026-10-16

AI Technical Summary

Technical Problem

尽管在同一管芯上执行各种不同功能的器件设计可能是有利的,但随着管芯变得越来越大和复杂,良率挑战可能会抵消这些优势

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Abstract

Embodiments of the present application disclose an integrated circuit device and a method of manufacturing the same. The integrated circuit device includes a die, an interconnect at least partially overlapping the die, and a plurality of bumps in an area where the interconnect overlaps the die. The interconnect includes at least a first conductive layer and a second conductive layer, and the plurality of bumps includes first and second bumps spaced apart along a first direction. Each of the first and second conductive layers includes a plurality of signal conductors between the first and second bumps and a plurality of ground conductors between the first and second bumps. All of the signal conductors in each of the first and second conductive layers between the first and second bumps are between respective pairs of ground conductors in the respective conductive layer, and the pairs of ground conductors are continuously coupled from a first side of the plurality of signal conductors to a second side of the plurality of signal conductors within the first and second conductive layers.
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