Composition for manufacturing semiconductor device, semiconductor device manufacturing apparatus including the same, and semiconductor device manufacturing method

Abstract

Embodiments provide a composition for manufacturing a semiconductor device, the composition including acetylene and a solvent for dissolving the acetylene. The composition includes less than 2,000 ppm of water based on the total weight, and can be applied to a manufacturing process of a semiconductor device and a semiconductor device manufacturing apparatus.

Description

Technical Field

[0001] The embodiments relate to a composition for manufacturing a semiconductor device, an apparatus for manufacturing a semiconductor device including the composition, and a method for manufacturing a semiconductor device using the composition. Background Technology

[0002] Acetylene is widely used in various industries, including welding and chemical synthesis. In particular, it is more widely used in the electronics industry as a source material for depositing carbon and carbon-containing films. Applications include depositing amorphous carbon hard mask films.

[0003] However, acetylene presents several challenges in storage due to its thermal instability. Even in the absence of air or oxygen, acetylene can decompose into carbon and hydrogen under high pressure and high temperature storage conditions.

[0004] In particular, acetylene is known to be explosive under pressure greater than 15 psig. Therefore, the storage and transportation of acetylene remains a challenge. One way to overcome this problem is to dissolve the acetylene in acetone, which is contained in a metal bottle filled with a porous material. Since acetylene is highly soluble in acetone, acetone is commonly used for this purpose. At a temperature of approximately 15°C and atmospheric pressure, 1 volume of liquid acetone can absorb 25 volumes of gaseous acetylene, and for every additional atmosphere of pressure, it will continue to absorb an additional 25 volumes of acetylene (The Encyclopedia Britannica: ADictionary of Arts, Sciences, Literature and General Information, Hugh Chisholm, University Press 1910). Furthermore, the acetylene stream recovered from the acetone solution may contain a significant amount of acetone vapor. Summary of the Invention

[0005] Technical issues The embodiments aim to provide a composition for manufacturing a semiconductor device capable of stably supplying acetylene, a semiconductor device manufacturing apparatus including the composition, and a method for manufacturing a semiconductor device.

[0006] Technical solution The composition for manufacturing a semiconductor device according to an embodiment comprises: acetylene; and a solvent for dissolving acetylene, and the composition comprises less than 2000 ppm of water based on the total weight of the composition.

[0007] In the composition for manufacturing a semiconductor device according to the embodiments, the solvent may have a concentration of more than 0.25 mol / (m / v) relative to acetylene at room temperature. Henry's constant (·atm).

[0008] In the composition for manufacturing a semiconductor device according to the embodiments, the dipole moment of the solvent may be less than 2.8 Debye.

[0009] In the composition for manufacturing a semiconductor device according to the embodiment, the vapor pressure of the solvent at 20°C may be less than 500 Pa.

[0010] In the composition for manufacturing a semiconductor device according to the embodiments, the molecular weight of the solvent can exceed 75 g / mol.

[0011] In the composition for manufacturing a semiconductor device according to the embodiments, the flash point of the solvent can exceed 60°C.

[0012] The composition for manufacturing a semiconductor device according to the embodiments may include less than 1000 ppm of carbon dioxide based on the total weight of the composition.

[0013] The composition for manufacturing a semiconductor device according to the embodiments may include less than 1000 ppm of oxygen based on the total weight of the composition.

[0014] The composition for manufacturing a semiconductor device according to the embodiments may include less than 1000 ppm of nitrogen gas based on the total weight of the composition.

[0015] The composition for manufacturing a semiconductor device according to the embodiments may include less than 2000 ppm of hydrogen gas based on the total weight of the composition.

[0016] The composition for manufacturing a semiconductor device according to the embodiments may include less than 1000 ppm of hydrocarbon gas other than acetylene based on the total weight of the composition.

[0017] The composition for manufacturing a semiconductor device according to the embodiments may include less than 1 ppm of metal based on the total weight of the composition.

[0018] In the composition for preparing a semiconductor device according to the embodiments, the solvent may be at least one selected from the following: tris(N,N-tetramethylene)phosphonic triamide, hexamethylphosphoric triamine, N,N,N',N'-tetramethylmethylphosphonidamide, dimethyl sulfoxide, tetramethylene sulfoxide, tetramethylurea, dimethylacetamide, acetylpyrrolidine, acetaldehyde, tris(tetramethylene)phosphonamide, dimethoxymethane, methyl formate, methyl acetate, trimethyl phosphite, triethyl phosphate, tetramethyl diaminophosphofluoride (TetramTetraethylene glycol dimethyl fluoride). etherethyldiamidophosphonylfluoride), tetraethylene glycol dimethyl ether, ethyl acetate, diethylformamide, ethyl formate, methyl dimethyl carbamate, 1-formylpyrrolidone, bromoethane, γ-butyrolactone, N,N,N',N'-tetramethylamino-aminoacetamide, ethylene oxide, glyoxal tetramethyl acetal, acetonitrile, diethyl oxalate dimethyl acetal, methyl orthoacetate, trimethyl thiophosphate, 2-methyl-2-methoxy-1,3-dioxolane, γ-valerol, methyl propionate, nitromethane, nitrobenzene, N,N'-dimethylimidazolium ketone, propylene carbonate, butenyl carbonate, dimethyl carbonate, methyl ethyl carbonate, diethyl carbonate, N-ethylpyrrolidone, n-butyl acetate, sec-butyl acetate, or trimethyl phosphate.

[0019] A method for manufacturing a semiconductor device according to an embodiment may include: preparing a composition comprising acetylene and a solvent for dissolving acetylene; introducing acetylene dissolved from the composition into a chamber; and using the acetylene introduced into the chamber to form an amorphous carbon film on a semiconductor substrate, wherein the composition contains less than 2000 ppm of water based on the total weight of the composition.

[0020] In the method for manufacturing a semiconductor device according to the embodiment, an etching target layer may be provided between a semiconductor substrate and an amorphous carbon layer, and the amorphous carbon layer may be used as a hard mask layer to etch the etching target layer.

[0021] In the method for manufacturing a semiconductor device according to the embodiment, holes can be formed on a semiconductor substrate, and amorphous carbon films can be filled into the holes.

[0022] In the method for manufacturing a semiconductor device according to an embodiment, a pattern may be included on a semiconductor substrate, and an amorphous carbon layer may cover the pattern.

[0023] In the method for manufacturing a semiconductor device according to the embodiment, when forming an amorphous carbon film, the temperature inside the chamber can be 500°C to 600°C, the flow rate of acetylene supplied to the chamber can be 100 sccm to 3000 sccm, and hydrogen gas of 100 sccm to 3000 sccm can be supplied to the chamber together with acetylene.

[0024] An apparatus for manufacturing a semiconductor device according to an embodiment includes: a container; a porous packing material disposed in the container; and a composition injected into the container, wherein the composition comprises: a solvent; and acetylene dissolved in the solvent, and the composition comprises less than 2000 ppm of water based on the total weight of the composition.

[0025] The apparatus for manufacturing a semiconductor device according to an embodiment may further include a filter unit connected to a container, and the filter unit is configured to filter acetylene discharged from the container.

[0026] The effects of the invention The composition for manufacturing a semiconductor device according to embodiments includes acetylene and a solvent capable of dissolving acetylene. Since the solvent has a suitable Henry's constant, acetylene can be appropriately dissolved. Therefore, the composition for manufacturing a semiconductor device according to embodiments may include acetylene with an increased content. Furthermore, the composition for manufacturing a semiconductor device according to embodiments can supply high-purity acetylene to the semiconductor device manufacturing process for forming an amorphous carbon film.

[0027] Furthermore, the solvent can have a suitable vapor pressure. Therefore, the composition for manufacturing a semiconductor device according to the embodiments can include an increased content of acetylene. Furthermore, the composition for manufacturing a semiconductor device according to the embodiments can supply high-purity acetylene to the semiconductor device manufacturing process for forming an amorphous carbon film.

[0028] Furthermore, the solvent can have a suitable boiling point. Therefore, the composition for manufacturing a semiconductor device according to the embodiments may include an increased content of acetylene. Furthermore, the composition for manufacturing a semiconductor device according to the embodiments may supply high-purity acetylene to the semiconductor device manufacturing process for forming an amorphous carbon film.

[0029] Furthermore, the composition for manufacturing a semiconductor device according to the embodiments may include an appropriate amount of water.

[0030] Furthermore, the composition for manufacturing a semiconductor device according to the embodiments may include an appropriate amount of carbon dioxide.

[0031] Furthermore, the composition for manufacturing a semiconductor device according to the embodiments may include an appropriate amount of oxygen.

[0032] Furthermore, the composition for manufacturing a semiconductor device according to the embodiments may include an appropriate amount of nitrogen gas.

[0033] Furthermore, the composition for manufacturing a semiconductor device according to the embodiments may include an appropriate amount of hydrogen.

[0034] Furthermore, the composition for manufacturing a semiconductor device according to the embodiments may include an appropriate amount of hydrocarbon gas other than acetylene.

[0035] Furthermore, the composition for manufacturing a semiconductor device according to the embodiments may include an appropriate amount of metal.

[0036] Therefore, the composition for manufacturing a semiconductor device according to the embodiments can supply acetylene having a composition suitable for semiconductor processes that form amorphous carbon films. Thus, the composition for manufacturing a semiconductor device according to the embodiments can provide a semiconductor device with fewer defects.

[0037] Furthermore, the semiconductor device manufacturing apparatus according to the embodiments may include a filter unit. Therefore, the semiconductor device manufacturing apparatus according to the embodiments can effectively remove fine particles originating from porous fillers.

[0038] Therefore, the semiconductor device manufacturing equipment according to the embodiments can provide semiconductor devices with fewer defects.

[0039] In particular, the composition for manufacturing a semiconductor device according to the embodiments can provide an amorphous carbon film with improved quality. Therefore, the semiconductor device manufacturing method according to the embodiments can manufacture a semiconductor device with fewer defects.

[0040] Furthermore, since the solvent can suppress the change of acetylene gas over time, the composition for manufacturing a semiconductor device according to the embodiments can supply high-quality acetylene gas to the process of manufacturing the semiconductor device. Attached Figure Description

[0041] Figure 1 This is an illustration of an apparatus for forming an amorphous carbon film according to one embodiment.

[0042] Figure 2 This is a cross-sectional view showing an acetylene supply device according to one embodiment.

[0043] Figures 3 to 7 This is an illustration showing a portion of a process for manufacturing a semiconductor device according to one embodiment.

[0044] Figures 8 to 14 This is an illustration showing a part of a process for manufacturing a semiconductor device according to another embodiment.

[0045] Figures 15 to 18 This is an illustration showing a portion of the process for manufacturing a semiconductor device according to yet another embodiment. Detailed Implementation

[0046] Before describing the various exemplary embodiments of this disclosure, it should be understood that this disclosure is not limited to the details of the construction or process steps presented in the following description. This disclosure can have other embodiments and can be implemented or carried out in various ways.

[0047] Figure 1 This is a view showing an apparatus for forming an amorphous carbon film according to one embodiment. Figure 2 This is a cross-sectional view showing an acetylene supply device according to one embodiment.

[0048] The acetylene solution according to the embodiments includes acetylene and a solvent.

[0049] An acetylene solution may include approximately 10 wt% to approximately 90 wt% of acetylene based on the total weight.

[0050] The purity of acetylene can exceed approximately 99.1 wt%. The purity of acetylene can exceed approximately 99.5 wt%. The purity of acetylene can exceed approximately 99.9 wt%. The purity of acetylene can exceed approximately 99.95 wt%.

[0051] Acetylene can be a composition of a certain purity, and the composition includes at least one or more selected from water, carbon monoxide, carbon dioxide, oxygen, nitrogen, hydrogen, hydrocarbons or metals.

[0052] Acetylene may contain water. Water may be included in acetylene in an amount of less than about 2000 ppm based on the weight of acetylene. Water may be included in acetylene in an amount of less than about 1500 ppm based on the weight of acetylene. Water may be included in acetylene in an amount of less than about 1000 ppm based on the weight of acetylene. Water may be included in acetylene in an amount of less than about 500 ppm based on the weight of acetylene.

[0053] In addition, acetylene may contain water in amounts from about 10 ppm to about 2000 ppm by weight. Acetylene may contain water in amounts from about 10 ppm to about 1500 ppm by weight. Acetylene may contain water in amounts from about 10 ppm to about 1000 ppm by weight. Acetylene may contain water in amounts from about 10 ppm to about 500 ppm by weight.

[0054] Acetylene may contain carbon monoxide. Carbon monoxide may be contained in acetylene in an amount less than about 20 ppm based on the weight of acetylene. Carbon monoxide may be contained in acetylene in an amount less than about 15 ppm based on the weight of acetylene. Carbon monoxide may be contained in acetylene in an amount less than about 10 ppm based on the weight of acetylene. Carbon monoxide may be contained in acetylene in an amount less than about 5 ppm based on the weight of acetylene.

[0055] In addition, acetylene may contain carbon monoxide in amounts from about 0.1 ppm to about 20 ppm by weight. Acetylene may contain carbon monoxide in amounts from about 0.1 ppm to about 15 ppm by weight. Acetylene may contain carbon monoxide in amounts from about 0.1 ppm to about 10 ppm by weight. Acetylene may contain carbon monoxide in amounts from about 0.1 ppm to about 5 ppm by weight.

[0056] Acetylene may contain carbon dioxide. Carbon dioxide may be contained in acetylene in an amount less than about 1000 ppm based on the weight of acetylene. Carbon dioxide may be contained in acetylene in an amount less than about 500 ppm based on the weight of acetylene. Carbon dioxide may be contained in acetylene in an amount less than about 300 ppm based on the weight of acetylene. Carbon dioxide may be contained in acetylene in an amount less than about 200 ppm based on the weight of acetylene.

[0057] In addition, acetylene may contain carbon dioxide in amounts from about 1 ppm to about 1000 ppm by weight. Acetylene may contain carbon dioxide in amounts from about 1 ppm to about 500 ppm by weight. Acetylene may contain carbon dioxide in amounts from about 1 ppm to about 300 ppm by weight. Acetylene may contain carbon dioxide in amounts from about 1 ppm to about 200 ppm by weight.

[0058] Acetylene may contain oxygen. Oxygen may be contained in acetylene in an amount of less than about 200 ppm based on the weight of acetylene. Oxygen may be contained in acetylene in an amount of less than about 150 ppm based on the weight of acetylene. Oxygen may be contained in acetylene in an amount of less than about 100 ppm based on the weight of acetylene. Oxygen may be contained in acetylene in an amount of less than about 50 ppm based on the weight of acetylene.

[0059] In addition, acetylene may contain oxygen in amounts from about 1 ppm to about 200 ppm by weight. Acetylene may contain oxygen in amounts from about 1 ppm to about 150 ppm by weight. Acetylene may contain oxygen in amounts from about 1 ppm to about 100 ppm by weight. Acetylene may contain oxygen in amounts from about 1 ppm to about 50 ppm by weight.

[0060] Acetylene may contain nitrogen. Nitrogen may be contained in acetylene in an amount of less than about 400 ppm based on the weight of acetylene. Nitrogen may be contained in acetylene in an amount of less than about 300 ppm based on the weight of acetylene. Nitrogen may be contained in acetylene in an amount of less than about 200 ppm based on the weight of acetylene. Nitrogen may be contained in acetylene in an amount of less than about 100 ppm based on the weight of acetylene.

[0061] In addition, acetylene may contain nitrogen in amounts from about 1 ppm to about 400 ppm by weight. Acetylene may contain nitrogen in amounts from about 1 ppm to about 300 ppm by weight. Acetylene may contain nitrogen in amounts from about 1 ppm to about 200 ppm by weight. Acetylene may contain nitrogen in amounts from about 1 ppm to about 100 ppm by weight.

[0062] Acetylene may contain hydrogen. Hydrogen may be contained in acetylene in an amount less than about 2000 ppm based on the weight of acetylene. Hydrogen may be contained in acetylene in an amount less than about 1500 ppm based on the weight of acetylene. Hydrogen may be contained in acetylene in an amount less than about 1000 ppm based on the weight of acetylene. Hydrogen may be contained in acetylene in an amount less than about 500 ppm based on the weight of acetylene.

[0063] In addition, acetylene may contain hydrogen in amounts from about 10 ppm to about 2000 ppm by weight. Acetylene may contain hydrogen in amounts from about 10 ppm to about 1500 ppm by weight. Acetylene may contain hydrogen in amounts from about 10 ppm to about 1000 ppm by weight. Acetylene may contain hydrogen in amounts from about 10 ppm to about 500 ppm by weight.

[0064] Acetylene may contain hydrocarbons other than acetylene. The hydrocarbon may be at least one selected from methane (CH4), ethane (C2H6), ethylene (C2H4), or propane (C3H8).

[0065] Hydrocarbons may be included in acetylene in an amount less than about 1000 ppm based on the weight of acetylene. Hydrocarbons may be included in acetylene in an amount less than about 500 ppm based on the weight of acetylene. Hydrocarbons may be included in acetylene in an amount less than about 300 ppm based on the weight of acetylene. Hydrocarbons may be included in acetylene in an amount less than about 200 ppm based on the weight of acetylene.

[0066] In addition, acetylene may contain hydrocarbons in amounts from about 10 ppm to about 1000 ppm by weight. Acetylene may contain hydrocarbons in amounts from about 10 ppm to about 500 ppm by weight. Acetylene may contain hydrocarbons in amounts from about 10 ppm to about 300 ppm by weight. Acetylene may contain hydrocarbons in amounts from about 10 ppm to about 200 ppm by weight.

[0067] Acetylene may contain a metal. The metal may be at least one selected from sodium, calcium, iron, copper, aluminum, magnesium, potassium, nickel, zinc, chromium, manganese, titanium, gallium, or silicon.

[0068] Metals may be included in acetylene in an amount less than about 1 ppm based on the weight of acetylene. Metals may be included in acetylene in an amount less than about 0.5 ppm based on the weight of acetylene. Metals may be included in acetylene in an amount less than about 0.3 ppm based on the weight of acetylene. Metals may be included in acetylene in an amount less than about 0.2 ppm based on the weight of acetylene.

[0069] In addition, acetylene may contain a metal in an amount from about 0.01 ppm to about 1 ppm by weight. Acetylene may contain a metal in an amount from about 0.01 ppm to about 0.5 ppm by weight. Acetylene may contain a metal in an amount from about 0.01 ppm to about 0.3 ppm by weight. Acetylene may contain a metal in an amount from about 0.01 ppm to about 0.2 ppm by weight.

[0070] Because acetylene comprises the aforementioned amounts of water, carbon monoxide, carbon dioxide, oxygen, nitrogen, hydrocarbons, hydrogen, or metals, it can be effectively used in the manufacturing process of semiconductor devices. In particular, acetylene can reduce defects in the semiconductor device manufacturing process.

[0071] Solvents can dissolve acetylene. Solvents can dissolve high concentrations of acetylene. Therefore, acetylene can be dissolved in a solvent to prepare an acetylene solution according to the embodiments.

[0072] The solvent can have a Henry's constant relative to acetylene at a predetermined temperature.

[0073] The solvent can have a solubility relative to acetylene at a predetermined temperature, as shown in Equation 1 below.

[0074] [Equation 1] C = k × P Here, C is the solubility at a given temperature, k is the Henry's constant at a given temperature, and P is the partial pressure of acetylene at a given temperature. The unit of C is mol / L. The pressure unit P is atm.

[0075] At a temperature of approximately 23°C, the solvent can have a relative viscosity of approximately 0.25 mol / (m / v) compared to acetylene. (atm), greater than approximately 0.35 mol / ( (atm), greater than approximately 0.45 mol / ( (atm), greater than approximately 0.55 mol / ( (atm), greater than approximately 0.65 mol / ( (atm), greater than approximately 0.75 mol / ( (atm), greater than approximately 0.85 mol / ( (atm), greater than approximately 0.95 mol / ( (atm), or greater than about 1.05 mol / ( Henry's constant (·atm).

[0076] At a temperature of approximately 23°C, the maximum value of the Henry's constant relative to acetylene can be approximately 2.0 mol / ( ·atm).

[0077] At a temperature of approximately 23°C, the solvent can have a relative viscosity of approximately 0.25 mol / (m / v) compared to acetylene. ·atm) to about 0.60mol / ( ·atm), 0.35mol / ( ·atm) to about 0.60mol / ( (atm), approximately 0.45 mol / ( ·atm) to about 0.60mol / ( (atm), approximately 0.25 mol / ( ·atm) to about 0.50mol / ( (atm), or approximately 0.35 mol / ( ·atm) to about 0.50mol / ( Henry's constant (·atm).

[0078] At a temperature of approximately 23°C, the solvent can have a relative viscosity of approximately 0.70 mol / ( acetylene). ·atm) to about 0.90mol / ( ·atm), 0.75mol / ( ·atm) to about 0.90mol / ( ·atm), approximately 0.80mol / ( ·atm) to about 0.90mol / ( (atm), approximately 0.70 mol / ( ·atm) to approximately 0.80mol / ( (atm), or approximately 0.75 mol / ( ·atm) to approximately 0.85mol / ( Henry's constant (·atm).

[0079] At a temperature of approximately 23°C, the solvent can have a relative viscosity of approximately 0.95 mol / (m / v) compared to acetylene. ·atm) to about 2.0mol / ( ·atm), 1.0mol / ( ·atm) to about 2.0mol / ( (atm), approximately 1.05 mol / ( ·atm) to about 2.0mol / ( ·atm), approximately 1.1mol / ( ·atm) to about 2.0mol / ( (atm), or approximately 1.15 mol / ( ·atm) to about 2.0mol / ( Henry's constant (·atm).

[0080] At a temperature of approximately 23°C, the solvent can have a relative viscosity of approximately 0.95 mol / (m / v) compared to acetylene. ·atm) to approximately 1.05mol / ( ·atm), 1.05mol / ( ·atm) to approximately 1.15mol / ( (atm), approximately 1.15 mol / ( ·atm) to approximately 1.25mol / ( (atm), approximately 0.95 mol / ( ·atm) to approximately 1.35mol / ( (atm), or approximately 1.05 mol / ( ·atm) to approximately 1.25mol / ( Henry's constant (·atm).

[0081] The solvent can have a relative strength of more than about 10 compared to acetylene at room temperature and atmospheric pressure. / The solubility. Here, solubility can be defined as the solubility in 1... The volume of acetylene in the solvent.

[0082] The solvent can have a relative strength of more than approximately 12 compared to acetylene at room temperature and atmospheric pressure. / Greater than approximately 15 / or greater than approximately 17 / The solubility of [something]. The maximum solubility can be 100. / .

[0083] Furthermore, the solvent can have a solubility of more than about 0.5 g / mol relative to acetylene at room temperature and atmospheric pressure. Here, solubility can refer to the mass of acetylene dissolved in 1 mol of solvent.

[0084] The solubility of the solvent relative to acetylene at room temperature and atmospheric pressure can be greater than about 0.7 g / mol, greater than about 0.8 g / mol, greater than about 1 g / mol, or greater than 1.2 g / mol. The maximum solubility can be 20 g / mol.

[0085] Solvents can have a dipole moment. The dipole moment of a solvent can be less than about 2.8 Debyes, less than about 2.5 Debyes, less than about 2.0 Debyes, less than about 1.5 Debyes, or less than about 1.0 Debyes.

[0086] The minimum dipole moment of the solvent can be approximately 0.1 Debye.

[0087] The dipole moment of the solvent can be from about 0.3 DeBy to about 2.8 DeBy, from about 0.3 DeBy to about 2.5 DeBy, from about 0.3 DeBy to about 2.0 DeBy, from about 0.3 DeBy to about 1.9 DeBy, or from about 0.3 DeBy to about 1.8 DeBy.

[0088] The dipole moment of the solvent can be about 2.9 DeBy to about 3.8 DeBy, about 2.9 DeBy to about 3.5 DeBy, about 3.2 DeBy to about 3.8 DeBy, about 3.5 DeBy to about 3.8 DeBy, or about 2.9 DeBy to about 3.3 DeBy.

[0089] The dipole moment of the solvent can be about 2.9 DeBy to about 3.8 DeBy, about 2.9 DeBy to about 3.5 DeBy, about 3.2 DeBy to about 3.8 DeBy, about 3.5 DeBy to about 3.8 DeBy, or about 2.9 DeBy to about 3.3 DeBy.

[0090] The dipole moment of the solvent can be from about 3.9 DeBy to about 10.0 DeBy, from about 4.5 DeBy to about 9.5 DeBy, from about 4.8 DeBy to about 9.0 DeBy, from about 3.9 DeBy to about 5.0 DeBy, or from about 4.0 DeBy to about 6.3 DeBy.

[0091] The dipole moment of the solvent can be about 3.9 DeBy to about 4.5 DeBy, about 4.5 DeBy to about 5.5 DeBy, about 5.5 DeBy to about 9.0 DeBy, about 3.9 DeBy to about 4.3 DeBy, or about 4.3 DeBy to about 5.3 DeBy.

[0092] The solvent may have a vapor pressure. The vapor pressure of the solvent at about 20°C may be less than about 500 Pa, less than about 450 Pa, less than about 400 Pa, less than about 350 Pa, less than about 300 Pa, less than about 250 Pa, less than about 200 Pa, less than about 150 Pa, less than about 100 Pa, or less than about 50 Pa.

[0093] The minimum vapor pressure of the solvent at about 20°C can be about 0.1 Pa.

[0094] The solvent may have a vapor pressure. The vapor pressure of the solvent at about 25°C may be less than about 500 Pa, less than about 450 Pa, less than about 400 Pa, less than about 350 Pa, less than about 300 Pa, less than about 250 Pa, less than about 200 Pa, less than about 150 Pa, less than about 100 Pa, or less than about 50 Pa.

[0095] The minimum vapor pressure of the solvent at about 25°C can be about 0.1 Pa.

[0096] The vapor pressure of the solvent at about 20°C can be about 0.1 Pa to about 50 Pa, about 50 Pa to about 100 Pa, about 100 Pa to about 150 Pa, about 150 Pa to about 200 Pa, about 200 Pa to about 250 Pa, about 250 Pa to about 300 Pa, about 300 Pa to about 350 Pa, about 350 Pa to about 400 Pa, about 400 Pa to about 450 Pa, or about 450 Pa to about 500 Pa.

[0097] The vapor pressure of the solvent at about 25°C can be about 0.1 Pa to about 50 Pa, about 50 Pa to about 100 Pa, about 100 Pa to about 150 Pa, about 150 Pa to about 200 Pa, about 200 Pa to about 250 Pa, about 250 Pa to about 300 Pa, about 300 Pa to about 350 Pa, about 350 Pa to about 400 Pa, about 400 Pa to about 450 Pa, or about 450 Pa to about 500 Pa.

[0098] The vapor pressure of the solvent at about 25°C can be about 600 Pa to about 30000 Pa, about 1000 Pa to about 30000 Pa, about 1500 Pa to about 30000 Pa, about 2000 Pa to about 30000 Pa, about 3000 Pa to about 30000 Pa, about 4000 Pa to about 30000 Pa, about 5000 Pa to about 30000 Pa, about 6000 Pa to about 30000 Pa, about 7000 Pa to about 30000 Pa, about 8000 Pa to about 30000 Pa, about 9000 Pa to about 30000 Pa, about 10000 Pa to about 30000 Pa, about 11000 Pa to about 30000 Pa, about 12000 Pa to about 30000 Pa, about 15000 Pa to about 30000 Pa, or about 18000 Pa to about 30000 Pa.

[0099] The vapor pressure of the solvent at about 20°C can be about 600 Pa to about 30000 Pa, about 1000 Pa to about 30000 Pa, about 1500 Pa to about 30000 Pa, about 2000 Pa to about 30000 Pa, about 3000 Pa to about 30000 Pa, about 4000 Pa to about 30000 Pa, about 5000 Pa to about 30000 Pa, about 6000 Pa to about 30000 Pa, about 7000 Pa to about 30000 Pa, about 8000 Pa to about 30000 Pa, about 9000 Pa to about 30000 Pa, about 10000 Pa to about 30000 Pa, about 11000 Pa to about 30000 Pa, about 12000 Pa to about 30000 Pa, about 15000 Pa to about 30000 Pa, or about 18000 Pa to about 30000 Pa.

[0100] The vapor pressure of the solvent at about 25°C can be about 600 Pa to about 30000 Pa, about 1000 Pa to about 28000 Pa, about 1000 Pa to about 25000 Pa, about 1000 Pa to about 22000 Pa, about 1000 Pa to about 20000 Pa, about 1000 Pa to about 18000 Pa, about 1000 Pa to about 15000 Pa, about 600 Pa to about 12000 Pa, about 600 Pa to about 10000 Pa, about 600 Pa to about 9000 Pa, about 600 Pa to about 8000 Pa, about 600 Pa to about 7000 Pa, about 600 Pa to about 6000 Pa, about 600 Pa to about 5000 Pa, about 600 Pa to about 4000 Pa, or about 600 Pa to about 3000 Pa.

[0101] The vapor pressure of the solvent at about 20°C can be about 600 Pa to about 30000 Pa, about 1000 Pa to about 28000 Pa, about 1000 Pa to about 25000 Pa, about 1000 Pa to about 22000 Pa, about 1000 Pa to about 20000 Pa, about 1000 Pa to about 18000 Pa, about 1000 Pa to about 15000 Pa, about 600 Pa to about 12000 Pa, about 600 Pa to about 10000 Pa, about 600 Pa to about 9000 Pa, about 600 Pa to about 8000 Pa, about 600 Pa to about 7000 Pa, about 600 Pa to about 6000 Pa, about 600 Pa to about 5000 Pa, about 600 Pa to about 4000 Pa, or about 600 Pa to about 3000 Pa.

[0102] The vapor pressure of the solvent at about 25°C can be about 600 Pa to about 1000 Pa, about 1000 Pa to about 2000 Pa, about 2000 Pa to about 4000 Pa, about 4000 Pa to about 6000 Pa, about 6000 Pa to about 8000 Pa, about 8000 Pa to about 10000 Pa, about 10000 Pa to about 12000 Pa, about 12000 Pa to about 14000 Pa, about 16000 Pa to about 18000 Pa, about 20000 Pa to about 22000 Pa, about 22000 Pa to about 24000 Pa, about 26000 Pa to about 28000 Pa, or about 28000 Pa to about 30000 Pa.

[0103] The vapor pressure of the solvent at about 20°C can be about 600 Pa to about 1000 Pa, about 1000 Pa to about 2000 Pa, about 2000 Pa to about 4000 Pa, about 4000 Pa to about 6000 Pa, about 6000 Pa to about 8000 Pa, about 8000 Pa to about 10000 Pa, about 10000 Pa to about 12000 Pa, about 12000 Pa to about 14000 Pa, about 16000 Pa to about 18000 Pa, about 20000 Pa to about 22000 Pa, about 22000 Pa to about 24000 Pa, about 26000 Pa to about 28000 Pa, or about 28000 Pa to about 30000 Pa.

[0104] The boiling point of a solvent at atmospheric pressure can exceed approximately 160°C. The boiling point of a solvent at atmospheric pressure can be greater than approximately 160°C, greater than approximately 170°C, greater than approximately 180°C, greater than approximately 190°C, or greater than approximately 200°C.

[0105] The maximum boiling point of the solvent at atmospheric pressure can be approximately 400°C.

[0106] In addition, the boiling point of the solvent at a pressure of about 15 mmHg can be from about 50°C to about 150°C.

[0107] Furthermore, the boiling point of the solvent at a pressure of about 60 Torr can be from about 100°C to about 150°C.

[0108] The solvent may have a flash point exceeding approximately 60°C. The flash point of the solvent may exceed approximately 70°C, approximately 80°C, approximately 90°C, or approximately 100°C.

[0109] The maximum flash point of the solvent can be approximately 500°C.

[0110] The solvent can be represented by the following chemical formula 1.

[0111] [Chemical Formula 1] C x Oy H z In chemical formula 1, x can be an integer from 4 to 20, y can be an integer from 1 to 10, and z can be an integer from 2 to 40.

[0112] In chemical formula 1, x can be an integer from 3 to 20, y can be an integer from 2 to 10, and z can be an integer from 2 to 40.

[0113] In chemical formula 1, x can be an integer from 3 to 20, y can be an integer from 3 to 10, and z can be an integer from 2 to 40.

[0114] Furthermore, in chemical formula 1, the ratio of oxygen to carbon can be from 1:3 to 1:20.

[0115] Solvents may contain phosphorus.

[0116] Solvents may contain sulfur.

[0117] Solvents may contain halogens. Solvents may contain bromine. Solvents may contain fluorine.

[0118] The solvent may contain heteroaromatic compounds. The solvent may contain nitrogen-containing heteroaromatic compounds. The solvent may contain oxygen-containing heteroaromatic compounds.

[0119] Solvents can have molecular weights exceeding approximately 75 g / mol. The molecular weights of solvents can exceed approximately 75 g / mol, approximately 80 g / mol, approximately 85 g / mol, approximately 90 g / mol, approximately 95 g / mol, approximately 100 g / mol, approximately 105 g / mol, approximately 110 g / mol, approximately 120 g / mol, approximately 130 g / mol, approximately 140 g / mol, approximately 150 g / mol, approximately 160 g / mol, approximately 170 g / mol, approximately 180 g / mol, or approximately 190 g / mol.

[0120] The maximum molecular weight of the solvent can be approximately 5000 g / mol.

[0121] The molecular weight of the solvent can be from about 75 g / mol to about 95 g / mol, from about 95 g / mol to about 115 g / mol, from about 115 g / mol to about 135 g / mol, from about 135 g / mol to about 155 g / mol, from about 155 g / mol to about 175 g / mol, from about 175 g / mol to about 195 g / mol, from about 195 g / mol to about 215 g / mol, from about 215 g / mol to about 235 g / mol, from about 235 g / mol to about 255 g / mol, or from about 255 g / mol to about 275 g / mol.

[0122] In the composition for manufacturing a semiconductor device according to the embodiments, the solvent may be at least one selected from the following: tris(N,N-tetramethylene)phosphonic triamide, hexamethylphosphoric triamide, N,N,N',N'-tetramethylmethylphosphonidamide, dimethyl sulfoxide, tetramethylene sulfoxide, tetramethylurea, dimethylacetamide, acetylpyrrolidine, acetaldehyde, tris(tetramethylene)phosphonamide, dimethoxymethane, methyl formate, methyl acetate, trimethyl phosphite, triethyl phosphate, tetramethyl diaminophosphofluoride (TetramTetraethylene glycol dimethyl fluoride). etherethyldiamidophosphonylfluoride), tetraethylene glycol dimethyl ether, ethyl acetate, diethylformamide, ethyl formate, methyl dimethyl carbamate, 1-formylpyrrolidone, bromoethane, γ-butyrolactone, N,N,N',N'-tetramethylamino-aminoacetamide, ethylene oxide, glyoxal tetramethyl acetal, acetonitrile, diethyl oxalate dimethyl acetal, methyl orthoacetate, trimethyl thiophosphate, 2-methyl-2-methoxy-1,3-dioxolane, γ-valerol, methyl propionate, nitromethane, nitrobenzene, N,N'-dimethylimidazolium ketone, propylene carbonate, butenyl carbonate, dimethyl carbonate, methyl ethyl carbonate, diethyl carbonate, N-ethylpyrrolidone, n-butyl acetate, sec-butyl acetate, or trimethyl phosphate.

[0123] Tris(N,N-tetramethylene)phosphonic acidtriamide (TPPA) can be represented by the following chemical formula 2.

[0124] [Chemical Formula 2]

[0125] Trimethyl phosphite (TMP) can be represented by the following chemical formula 3.

[0126] [Chemical Formula 3]

[0127] Triethyl phosphate (TEP) can be represented by the following chemical formula 4.

[0128] [Chemical Formula 4]

[0129] γ-Butyrolactone (GBL) can be represented by the following chemical formula 5.

[0130] [Chemical Formula 5]

[0131] The solvent may be a combination of at least one or more selected from water, carbon monoxide, carbon dioxide, oxygen, nitrogen, hydrogen, hydrocarbons or metals.

[0132] The solvent may include water. Water may be included in the solvent in an amount of less than about 2000 ppm based on the weight of the solvent. Water may be included in the solvent in an amount of less than about 1500 ppm based on the weight of the solvent. Water may be included in the solvent in an amount of less than about 1000 ppm based on the weight of the solvent. Water may be included in the solvent in an amount of less than about 500 ppm based on the weight of the solvent.

[0133] In addition, the solvent may include water in an amount from about 10 ppm to about 2000 ppm by weight. Water may be included in the solvent in an amount from about 10 ppm to about 1500 ppm by weight based on the solvent. The solvent may include water in an amount from about 10 ppm to about 1000 ppm by weight. The solvent may include water in an amount from about 10 ppm to about 500 ppm by weight.

[0134] The solvent may include carbon monoxide. Carbon monoxide may be included in the solvent in an amount less than about 20 ppm based on the weight of the solvent. Carbon monoxide may be included in the solvent in an amount less than about 15 ppm based on the weight of the solvent. Carbon monoxide may be included in the solvent in an amount less than about 10 ppm based on the weight of the solvent. Carbon monoxide may be included in the solvent in an amount less than about 5 ppm based on the weight of the solvent.

[0135] In addition, the solvent may include carbon monoxide in an amount from about 0.1 ppm to about 20 ppm by weight. The solvent may include carbon monoxide in an amount from about 0.1 ppm to about 15 ppm by weight. The solvent may include carbon monoxide in an amount from about 0.1 ppm to about 10 ppm by weight. The solvent may include carbon monoxide in an amount from about 0.1 ppm to about 5 ppm by weight.

[0136] The solvent may include carbon dioxide. Carbon dioxide may be included in the solvent in an amount of less than about 1000 ppm based on the weight of the solvent. Carbon dioxide may be included in the solvent in an amount of less than about 500 ppm based on the weight of the solvent. Carbon dioxide may be included in the solvent in an amount of less than about 300 ppm based on the weight of the solvent. Carbon dioxide may be included in the solvent in an amount of less than about 200 ppm based on the weight of the solvent.

[0137] In addition, the solvent may include carbon dioxide in amounts from about 1 ppm to about 1000 ppm by weight. The solvent may include carbon dioxide in amounts from about 1 ppm to about 500 ppm by weight. The solvent may include carbon dioxide in amounts from about 1 ppm to about 300 ppm by weight. The solvent may include carbon dioxide in amounts from about 1 ppm to about 200 ppm by weight.

[0138] The solvent may include oxygen. Oxygen may be included in the solvent in an amount of less than about 200 ppm based on the weight of the solvent. Oxygen may be included in the solvent in an amount of less than about 150 ppm based on the weight of the solvent. Oxygen may be included in the solvent in an amount of less than about 100 ppm based on the weight of the solvent. Oxygen may be included in the solvent in an amount of less than about 50 ppm based on the weight of the solvent.

[0139] In addition, the solvent may include oxygen in an amount from about 1 ppm to about 200 ppm by weight. The solvent may include oxygen in an amount from about 1 ppm to about 150 ppm by weight. The solvent may include oxygen in an amount from about 1 ppm to about 100 ppm by weight. The solvent may include oxygen in an amount from about 1 ppm to about 50 ppm by weight.

[0140] The solvent may include nitrogen gas. Nitrogen gas may be included in the solvent in an amount of less than about 400 ppm based on the weight of the solvent. Nitrogen gas may be included in the solvent in an amount of less than about 300 ppm based on the weight of the solvent. Nitrogen gas may be included in the solvent in an amount of less than about 200 ppm based on the weight of the solvent. Nitrogen gas may be included in the solvent in an amount of less than about 100 ppm based on the weight of the solvent.

[0141] In addition, the solvent may include nitrogen gas in an amount from about 1 ppm to about 400 ppm by weight. The solvent may include nitrogen gas in an amount from about 1 ppm to about 300 ppm by weight. The solvent may include nitrogen gas in an amount from about 1 ppm to about 200 ppm by weight. The solvent may include nitrogen gas in an amount from about 1 ppm to about 100 ppm by weight.

[0142] The solvent may include hydrogen gas. Hydrogen gas may be included in the solvent in an amount less than about 2000 ppm based on the weight of the solvent. Hydrogen gas may be included in the solvent in an amount less than about 1500 ppm based on the weight of the solvent. Hydrogen gas may be included in the solvent in an amount less than about 1000 ppm based on the weight of the solvent. Hydrogen gas may be included in the solvent in an amount less than about 500 ppm based on the weight of the solvent.

[0143] In addition, the solvent may include hydrogen in an amount from about 10 ppm to about 2000 ppm by weight. The solvent may include hydrogen in an amount from about 10 ppm to about 1500 ppm by weight. The solvent may include hydrogen in an amount from about 10 ppm to about 1000 ppm by weight. The solvent may include hydrogen in an amount from about 10 ppm to about 500 ppm by weight.

[0144] The solvent may include hydrocarbons other than acetylene. The hydrocarbon may be at least one selected from methane (CH4), ethane (C2H6), ethylene (C2H4), or propane (C3H8).

[0145] Hydrocarbons may be included in the solvent in an amount of less than about 1000 ppm based on the weight of the solvent. Hydrocarbons may be included in the solvent in an amount of less than about 500 ppm based on the weight of the solvent. Hydrocarbons may be included in the solvent in an amount of less than about 300 ppm based on the weight of the solvent. Hydrocarbons may be included in the solvent in an amount of less than about 200 ppm based on the weight of the solvent.

[0146] In addition, the solvent may include hydrocarbons in amounts from about 10 ppm to about 1000 ppm by weight. The solvent may include hydrocarbons in amounts from about 10 ppm to about 500 ppm by weight. The solvent may include hydrocarbons in amounts from about 10 ppm to about 300 ppm by weight. The solvent may include hydrocarbons in amounts from about 10 ppm to about 200 ppm by weight.

[0147] The solvent may include a metal. The metal may be at least one selected from sodium, calcium, iron, copper, aluminum, magnesium, potassium, nickel, zinc, chromium, manganese, titanium, gallium, or silicon.

[0148] Metals may be included in the solvent in an amount less than about 1 ppm based on the weight of the solvent. Metals may be included in the solvent in an amount less than about 0.5 ppm based on the weight of the solvent. Metals may be included in the solvent in an amount less than about 0.3 ppm based on the weight of the solvent. Metals may be included in the solvent in an amount less than about 0.2 ppm based on the weight of the solvent.

[0149] In addition, the solvent may include a metal in an amount from about 0.01 ppm to about 1 ppm by weight. The solvent may include a metal in an amount from about 0.01 ppm to about 0.5 ppm by weight. The solvent may include a metal in an amount from about 0.01 ppm to about 0.3 ppm by weight. The solvent may include a metal in an amount from about 0.01 ppm to about 0.2 ppm by weight.

[0150] The solvent can be used to control the content of water, carbon monoxide, carbon dioxide, oxygen, nitrogen, hydrocarbons, hydrogen, or metals by fractionation or vacuum distillation. That is, the content of water, carbon monoxide, carbon dioxide, oxygen, nitrogen, hydrocarbons, hydrogen, or metals in the solvent can be controlled by fractionation or vacuum distillation.

[0151] Because solvents include the aforementioned amounts of water, carbon monoxide, carbon dioxide, oxygen, nitrogen, hydrocarbons, hydrogen, or metals, they can be effectively used in the manufacturing process of semiconductor devices. In particular, solvents can reduce defects in the semiconductor device manufacturing process.

[0152] The acetylene solution according to the embodiments may include water. Water may be included in the solution in an amount less than about 2000 ppm based on the weight of the solution. Water may be included in the solution in an amount less than about 1500 ppm based on the weight of the solution. Water may be included in the solution in an amount less than about 1000 ppm based on the weight of the solution. Water may be included in the solution in an amount less than about 500 ppm based on the weight of the solution.

[0153] In addition, the solution may contain water in an amount from about 10 ppm to about 2000 ppm by weight. Water may be contained in an amount from about 10 ppm to about 1500 ppm by weight of the solution. The solution may contain water in an amount from about 10 ppm to about 1000 ppm by weight. The solution may contain water in an amount from about 10 ppm to about 500 ppm by weight.

[0154] The solution may contain carbon monoxide. Carbon monoxide may be contained in the solution in an amount less than about 20 ppm based on the weight of the solution. Carbon monoxide may be contained in the solution in an amount less than about 15 ppm based on the weight of the solution. Carbon monoxide may be contained in the solution in an amount less than about 10 ppm based on the weight of the solution. Carbon monoxide may be contained in the solution in an amount less than about 5 ppm based on the weight of the solution.

[0155] In addition, the solution may contain carbon monoxide in amounts from about 0.1 ppm to about 20 ppm by weight. The solution may contain carbon monoxide in amounts from about 0.1 ppm to about 15 ppm by weight. The solution may contain carbon monoxide in amounts from about 0.1 ppm to about 10 ppm by weight. The solution may contain carbon monoxide in amounts from about 0.1 ppm to about 5 ppm by weight.

[0156] The solution may contain carbon dioxide. Carbon dioxide may be contained in the solution in an amount less than about 1000 ppm based on the weight of the solution. Carbon dioxide may be contained in the solution in an amount less than about 500 ppm based on the weight of the solution. Carbon dioxide may be contained in the solution in an amount less than about 300 ppm based on the weight of the solution. Carbon dioxide may be contained in the solution in an amount less than about 200 ppm based on the weight of the solution.

[0157] In addition, the solution may contain carbon dioxide in amounts from about 1 ppm to about 1000 ppm by weight. The solution may contain carbon dioxide in amounts from about 1 ppm to about 500 ppm by weight. The solution may contain carbon dioxide in amounts from about 1 ppm to about 300 ppm by weight. The solution may contain carbon dioxide in amounts from about 1 ppm to about 200 ppm by weight.

[0158] The solution may contain oxygen. Oxygen may be contained in the solution in an amount less than about 200 ppm based on the weight of the solution. Oxygen may be contained in the solution in an amount less than about 150 ppm based on the weight of the solution. Oxygen may be contained in the solution in an amount less than about 100 ppm based on the weight of the solution. Oxygen may be contained in the solution in an amount less than about 50 ppm based on the weight of the solution.

[0159] In addition, the solution may contain oxygen in amounts from about 1 ppm to about 200 ppm by weight. The solution may contain oxygen in amounts from about 1 ppm to about 150 ppm by weight. The solution may contain oxygen in amounts from about 1 ppm to about 100 ppm by weight. The solution may contain oxygen in amounts from about 1 ppm to about 50 ppm by weight.

[0160] The solution may contain nitrogen gas. Nitrogen gas may be contained in the solution in an amount less than about 400 ppm based on the weight of the solution. Nitrogen gas may be contained in the solution in an amount less than about 300 ppm based on the weight of the solution. Nitrogen gas may be contained in the solution in an amount less than about 200 ppm based on the weight of the solution. Nitrogen gas may be contained in the solution in an amount less than about 100 ppm based on the weight of the solution.

[0161] In addition, the solution may contain nitrogen gas in amounts from about 1 ppm to about 400 ppm by weight. The solution may contain nitrogen gas in amounts from about 1 ppm to about 300 ppm by weight. The solution may contain nitrogen gas in amounts from about 1 ppm to about 200 ppm by weight. The solution may contain nitrogen gas in amounts from about 1 ppm to about 100 ppm by weight.

[0162] The solution may contain hydrogen gas. Hydrogen gas may be contained in the solution in an amount less than about 2000 ppm based on the weight of the solution. Hydrogen gas may be contained in the solution in an amount less than about 1500 ppm based on the weight of the solution. Hydrogen gas may be contained in the solution in an amount less than about 1000 ppm based on the weight of the solution. Hydrogen gas may be contained in the solution in an amount less than about 500 ppm based on the weight of the solution.

[0163] In addition, the solution may contain hydrogen gas in amounts from about 10 ppm to about 2000 ppm by weight. The solution may contain hydrogen gas in amounts from about 10 ppm to about 1500 ppm by weight. The solution may contain hydrogen gas in amounts from about 10 ppm to about 1000 ppm by weight. The solution may contain hydrogen gas in amounts from about 10 ppm to about 500 ppm by weight.

[0164] The solution may contain hydrocarbons other than acetylene. The hydrocarbons may be at least one selected from the following: methane (CH4), ethane (C2H6), ethylene (C2H4), or propane (C3H8).

[0165] Hydrocarbons may be contained in the solution in an amount less than about 1000 ppm based on the weight of the solution. Hydrocarbons may be contained in the solution in an amount less than about 500 ppm based on the weight of the solution. Hydrocarbons may be contained in the solution in an amount less than about 300 ppm based on the weight of the solution. Hydrocarbons may be contained in the solution in an amount less than about 200 ppm based on the weight of the solution.

[0166] In addition, the solution may contain hydrocarbons in amounts from about 10 ppm to about 1000 ppm by weight. The solution may contain hydrocarbons in amounts from about 10 ppm to about 500 ppm by weight. The solution may contain hydrocarbons in amounts from about 10 ppm to about 300 ppm by weight. The solution may contain hydrocarbons in amounts from about 10 ppm to about 200 ppm by weight.

[0167] The solution may contain a metal. The metal may be at least one selected from the following: sodium, calcium, iron, copper, aluminum, magnesium, potassium, nickel, zinc, chromium, manganese, titanium, gallium, or silicon.

[0168] Metals may be included in the solution in amounts less than about 1 ppm based on the weight of the solution. Metals may be included in the solution in amounts less than about 0.5 ppm based on the weight of the solution. Metals may be included in the solution in amounts less than about 0.3 ppm based on the weight of the solution. Metals may be included in the solution in amounts less than about 0.2 ppm based on the weight of the solution.

[0169] In addition, the solution may contain a metal in an amount from about 0.01 ppm to about 1 ppm by weight. The solution may contain a metal in an amount from about 0.01 ppm to about 0.5 ppm by weight. The solution may contain a metal in an amount from about 0.01 ppm to about 0.3 ppm by weight. The solution may contain a metal in an amount from about 0.01 ppm to about 0.2 ppm by weight.

[0170] Because the solution contains an appropriate amount of acetylene and an appropriate amount of solvent, the solution may contain a certain amount of water, carbon monoxide, carbon dioxide, oxygen, nitrogen, hydrocarbons, hydrogen, or metals.

[0171] Because solutions contain specific amounts of water, carbon monoxide, carbon dioxide, oxygen, nitrogen, hydrocarbons, hydrogen, or metals, they can be effectively applied to the manufacturing process of semiconductor devices. In particular, solutions can reduce defects in the manufacturing process of semiconductor devices.

[0172] The solution may contain water, carbon monoxide, carbon dioxide, oxygen, nitrogen, hydrocarbons, hydrogen and / or metals in amounts of less than about 5%, less than about 3%, less than about 1%, about 0.001% or more to less than about 5%, about 0.001% or more to less than about 3%, or about 0.001% to about 1% based on the total weight of the solution.

[0173] Water content can be measured using the Karl Fischer method.

[0174] The content of residual gases can be measured using gas chromatography equipment.

[0175] Metal content can be measured by inductively coupled plasma atomic emission spectrometry (ICP-OES).

[0176] In particular, because the solution has a specific concentration, when acetylene is supplied to the semiconductor substrate, oxidation reactions that could occur from water, carbon monoxide, carbon dioxide, oxygen, nitrogen, hydrocarbons, hydrogen, or metals can be prevented. Furthermore, the specific concentration of acetylene in the solution prevents changes in acetylene over time.

[0177] Therefore, the acetylene solution according to the embodiments can provide a semiconductor device with low defects.

[0178] Amorphous carbon films can be formed on semiconductor substrates using the following method: acetylene can be used to manufacture semiconductor devices that include amorphous carbon films.

[0179] First, prepare a semiconductor device manufacturing apparatus according to the embodiment. The semiconductor device manufacturing apparatus may be a deposition apparatus for forming an amorphous carbon layer.

[0180] Reference Figure 1 Semiconductor device manufacturing equipment may include an acetylene supply device 100, an acetylene purification device 200, a first filter unit 400, a second filter unit 500, and a deposition chamber 300.

[0181] Reference Figure 2 The acetylene supply equipment 100 may include a pressure vessel 110 and a porous packing 120.

[0182] Pressure vessels can accommodate porous packing. Pressure vessels can seal the porous packing to the outside. Pressure vessels can have improved rigidity to prevent leakage under high pressure. Pressure vessels can include steel cylinders.

[0183] Porous packing materials can be placed in pressure vessels. They can contain solvents, which can be adsorbed into the pores of the packing material.

[0184] Porous fillers may include activated carbon, zeolite, calcium silicate, or metal-organic frameworks.

[0185] Porous packing materials can include pores. The pores of porous packing materials can have an average diameter of about 0.01 µm to about 10 µm. The pores of porous packing materials can have an average diameter of about 0.01 µm to about 1 µm.

[0186] Porous packings can have porosities greater than about 50 vol%, about 60 vol%, about 70 vol%, about 80 vol%, or about 90 vol%.

[0187] The solvent can be adsorbed onto the porous packing material, and acetylene can dissolve in the solvent. That is, the solvent is absorbed into the porous packing material, and acetylene is injected into a pressure vessel under high pressure, allowing the acetylene to dissolve in the solvent. The solvent can fill the pores and spaces between the porous packing materials.

[0188] The solvent can be injected into the pressure vessel. The injection volume of the solvent can be approximately 0.1 kg / m³ based on the volume of the pressure vessel. Approximately 1 kg / The solvent injection volume can be approximately 0.3 kg / m³ based on the volume of the pressure vessel. Approximately 0.7 kg / .

[0189] Therefore, acetylene can be filled into an acetylene supply device under high pressure, and the acetylene supply device can contain acetylene solution. To feed acetylene into the acetylene supply device, acetylene can be injected into a pressure-resistant container at a pressure of approximately 200 psi to approximately 300 psi.

[0190] The acetylene purification equipment can be connected to an acetylene supply unit. The acetylene purification equipment can receive acetylene from the acetylene supply unit. The acetylene purification equipment can purify the acetylene and then supply the purified acetylene to the deposition chamber.

[0191] Acetylene purification equipment may include a trap for condensing and separating the solvent contained in acetylene gas, and a cooling device for reducing the temperature of the trap.

[0192] A refrigerant can be placed around the trap, and the temperature of the trap can be regulated by the refrigerant. The trap can be immersed in the refrigerant. In addition, a cooler can cool the refrigerant.

[0193] Therefore, the temperature of the trap can be regulated by a cooler. The cooler can adjust the temperature of the trap to approximately -60°C to approximately -10°C or approximately -60°C to approximately -30°C.

[0194] The collector may include an anti-fogging baffle. The anti-fogging baffle allows gaseous acetylene to pass through while blocking the condensed solvent. Therefore, the collector can collect the condensed solvent and supply high-purity acetylene to the deposition chamber. The collected solvent can be discharged through the collector's outlet.

[0195] Regarding the acetylene purification equipment, acetylene purification process, and amorphous carbon film formation process, except for the parts that are technically opposite, the contents described in Korean Patent No. 10-0986503 or Korean Patent Publication No. 10-2010-0068226 can be substantially combined with the description of this embodiment.

[0196] The semiconductor device manufacturing apparatus according to the embodiments may include a filter unit. The filter unit can filter metal nanoparticles, metal ions, metal compound nanoparticles, acetylene gas, etc. The filter unit may include a first filter unit 400 and a second filter unit 500.

[0197] The first filter unit 400 can be connected to the acetylene supply equipment. The first filter unit can be positioned between the acetylene supply equipment and the acetylene purification equipment.

[0198] The first filter unit can filter the acetylene gas supplied from the acetylene supply equipment.

[0199] The first filter unit may include at least one of an ultrafiltration filter, an adsorption filter, or a HEPA filter. The pore size of the first filter portion may be from about 0.005 µm to about 0.1 µm.

[0200] The first filter section can filter metal particles and / or metal compound particles. Furthermore, the first filter unit can collect highly active metals that have passed through the adsorption filter.

[0201] The second filter unit 500 can be connected to the acetylene supply equipment. The second filter unit can be connected to the acetylene supply equipment via an acetylene purification device. The second filter unit can be positioned between the deposition chamber and the acetylene purification device.

[0202] The second filter unit can filter acetylene gas supplied from the acetylene supply equipment. The second filter unit can also filter acetylene gas that has already passed through the acetylene purification equipment.

[0203] The second filter unit may include at least one of an ultrafiltration filter, an adsorption filter, or a HEPA filter. The pore size of the second filter section may be from about 0.005 µm to about 0.1 µm.

[0204] The second filter section can filter metal particles and / or metal compound particles. Furthermore, the second filter unit can collect highly active metals that have passed through the adsorption filter.

[0205] The deposition chamber can contain a semiconductor substrate W. An amorphous carbon film can be formed on the semiconductor substrate using acetylene gas supplied from an acetylene purification device.

[0206] The deposition chamber can be a chemical vapor deposition device or a plasma-enhanced chemical vapor deposition device.

[0207] A deposition chamber can form an amorphous carbon film on a semiconductor substrate, such as a wafer, through a chemical vapor phase reaction. Furthermore, an electric field can be applied to a precursor gas, such as acetylene, to form a plasma within the deposition chamber, and an amorphous carbon film can be formed on the semiconductor substrate via this plasma.

[0208] Regarding the deposition chamber and deposition process, except for the technically opposite parts, the descriptions in Korean Patent Application Publication No. 10-2023-0098788, etc., can be substantially combined with the description of this embodiment.

[0209] A method for manufacturing a semiconductor device according to an embodiment may include: preparing a composition comprising acetylene and a solvent for dissolving acetylene; introducing acetylene dissolved from the composition into a chamber; and using the acetylene introduced into the chamber to form an amorphous carbon film on a semiconductor substrate.

[0210] In order to form an amorphous carbon layer on a semiconductor substrate, an acetylene supply device must first be prepared.

[0211] The solvent is injected into the acetylene supply unit. Then, acetylene is injected into the acetylene supply unit. Acetylene can be injected into the pressure vessel at a pressure of approximately 200 psi to approximately 300 psi.

[0212] Afterwards, the acetylene supply equipment can be transported and connected to the acetylene purification equipment.

[0213] Then, acetylene can be dissolved from the solvent at a temperature of about 10°C to about 50°C and supplied to the acetylene purification equipment.

[0214] Subsequently, the acetylene purification equipment can remove residual solvents from the acetylene gas at a temperature of approximately -60°C to approximately -10°C, and supply high-purity acetylene gas to the deposition chamber.

[0215] The deposition chamber can be used to form an amorphous carbon film on a semiconductor substrate using high-purity acetylene gas. The pressure inside the deposition chamber can be from about 0.1 torr to about 10 torr. Furthermore, the process temperature of the deposition chamber in the process of forming the amorphous carbon film can be from about 100°C to about 800°C.

[0216] In the deposition process of amorphous carbon films, the process temperature can be from approximately 450°C to approximately 650°C. In the deposition process of amorphous carbon films, the process temperature can be from approximately 500°C to approximately 600°C.

[0217] In the deposition process of amorphous carbon films, radio frequency (RF) power can be used to form plasma. The frequency of RF power can be from about 3 kHz to about 300 GHz. The frequency of RF power can be from about 5 MHz to about 100 MHz. The frequency of RF power can be from about 10 MHz to about 20 MHz.

[0218] RF power can range from approximately 400W to approximately 3000W. RF power can range from approximately 500W to approximately 2000W.

[0219] Furthermore, in the deposition process of amorphous carbon films, the acetylene gas introduction flow rate can be from approximately 100 sccm to approximately 3000 sccm. Additionally, in the deposition process of amorphous carbon films, hydrogen gas can be supplied to the chamber together with acetylene gas at a flow rate of approximately 100 sccm to 3000 sccm.

[0220] Furthermore, in the deposition process of amorphous carbon films, the process time can be from about 10 seconds to about 1000 seconds.

[0221] Reference Figures 3 to 7 In order to manufacture the semiconductor device according to the embodiment, the following process can be performed.

[0222] like Figure 3 As shown, in order to form the semiconductor device according to the embodiment, an etch target layer 610, a hard mask layer 620 and a photoresist layer 630 may be formed on the semiconductor substrate 600.

[0223] Semiconductor substrate 600 may be a bulk silicon substrate or a silicon substrate containing a silicon oxide layer. Semiconductor substrate 600 may contain materials other than silicon. Semiconductor substrate 600 may contain silicon-germanium alloy, indium antimonide, tellurium alloy, indium arsenide, indium phosphide, gallium arsenide, or gallium antimonide.

[0224] The etch target layer 610 can be an insulating layer. The etch target layer 610 can contain silicon oxide, silicon nitride, or silicon oxynitride.

[0225] The hard mask layer 620 can be formed from acetylene gas contained in the acetylene supply device according to the embodiment. The hard mask layer 620 can be formed by a deposition process using acetylene gas. Acetylene gas can be used to form the hard mask layer 620 by a chemical vapor deposition process. The hard mask layer 620 can be an amorphous carbon layer formed from acetylene gas.

[0226] The photoresist layer 630 can be stacked on the hard mask layer 620. The photoresist composition can be coated onto the hard mask layer 620 by spin coating, dip coating or spray coating and dried to form the photoresist layer 630.

[0227] like Figure 4 As shown, the photoresist layer 630 is patterned through exposure and development processes. Therefore, a photoresist pattern 631 is formed on the hard mask layer 620.

[0228] After that, as Figure 5 As shown, a photoresist pattern 631 is used as an etching mask, and the hard mask layer 620 is patterned through an etching process. Therefore, the hard mask pattern 621 can be formed on the etching target layer 610.

[0229] After that, as Figure 6 As shown, a hard mask pattern is used as an etching mask to etch the target layer 610. Therefore, a recess can be formed in the target layer 610.

[0230] After that, as Figure 7As shown, a conductive pattern 640 is formed in the recess 611 using a damascene process. The conductive pattern 640 can be formed using a damascene process. To form the conductive pattern 640, a metal layer is formed in the recess 611 and on the etch target layer 610. Subsequently, the upper part of the metal layer and a portion of the etch target layer 610 can be planarized using a chemical mechanical polishing process, and the conductive pattern 640 can be formed.

[0231] The conductive pattern 640 can be used as a conductive line in a semiconductor device according to an embodiment. The semiconductor device according to an embodiment can be used as a word line in a volatile memory device such as dynamic random access memory (DRAM).

[0232] Because the acetylene solution according to the embodiment contains a solvent, high-quality acetylene can be supplied to the deposition chamber. Therefore, the acetylene gas supplied by the acetylene supply device can provide a hard mask layer 620 with improved etch selectivity. In particular, the acetylene supply device according to the embodiment can provide a hard mask layer 620 containing high-quality amorphous carbon because the amount of dissolved solvent is reduced.

[0233] Reference Figures 8 to 14 In order to manufacture the semiconductor device according to the embodiment, the following process can be performed.

[0234] like Figure 8 As shown, a first molding layer 710 is formed on a semiconductor substrate 600. The first molding layer 710 may include a first molding insulating layer 711 and a first molding sacrificial layer 712 that are alternately stacked.

[0235] The first molding insulating layer 711 and the first molding sacrificial layer 712 may comprise silicon oxide, silicon nitride, or silicon oxynitride. The first molding sacrificial layer 712 may have etch selectivity relative to the first molding insulating layer 711. For example, the first molding insulating layer 711 may comprise silicon oxide, and the first molding sacrificial layer 712 may comprise silicon nitride.

[0236] After that, as Figure 9 As shown, a first hole 713 is formed in the first molding layer 710. The first hole 713 can be formed by photolithography or the like. The first hole 713 can pass through the first molding layer 710.

[0237] After that, as Figure 10 As shown, a sacrificial pattern 731 is formed in the first hole 713. The first hole 713 can be filled with amorphous carbon to form the sacrificial pattern 731. The sacrificial pattern 731 can be formed by acetylene gas supplied by the acetylene supply device according to the embodiment. That is, the sacrificial pattern 731 can be formed by the acetylene solution according to the embodiment. The sacrificial pattern 731 can have etch selectivity relative to the first molding layer 710.

[0238] The process conditions for depositing amorphous carbon to form the sacrificial pattern 731 can be as follows.

[0239] In the process of depositing amorphous carbon, the process temperature can be from about 450°C to about 650°C. In the process of depositing amorphous carbon, the process temperature can be from about 500°C to about 600°C.

[0240] In the process of depositing amorphous carbon, radio frequency (RF) power can be used to form plasma. The frequency of RF power can be from about 3 kHz to about 300 GHz. The frequency of RF power can be from about 5 MHz to about 100 MHz. The frequency of RF power can be from about 10 MHz to about 20 MHz.

[0241] RF power can range from approximately 400W to approximately 3000W. RF power can range from approximately 500W to approximately 2000W.

[0242] Furthermore, in the amorphous carbon deposition process, the acetylene gas introduction flow rate can be from approximately 100 sccm to approximately 3000 sccm. Additionally, in the amorphous carbon deposition process, hydrogen gas can be supplied to the chamber along with acetylene gas at a flow rate of approximately 100 sccm to 3000 sccm.

[0243] Furthermore, in the process of depositing amorphous carbon to form the sacrificial pattern 731, the process time can be from about 10 seconds to about 1000 seconds.

[0244] After that, as Figure 11 As shown, a second molding layer is formed on the first molding layer and the sacrificial pattern 731. The second molding layer may include a second molding insulating layer 721 and a second molding sacrificial layer. The second molding insulating layer 721 and the second molding sacrificial layer may be stacked alternately.

[0245] The second molding insulating layer 721 and the second molding sacrificial layer 722 may comprise silicon oxide, silicon nitride, or silicon oxynitride. The second molding sacrificial layer 722 may have etch selectivity relative to the second molding insulating layer 721. For example, the second molding insulating layer 721 may comprise silicon oxide, and the second molding sacrificial layer 722 may comprise silicon nitride.

[0246] After that, as Figure 12 As shown, a second hole 723 is formed in the second molding layer 720. The second hole 723 can be formed by a photolithography process or the like. The second hole 723 can pass through the second molding layer 720. The second hole 723 can be formed to correspond to the first hole 713. That is, the first hole 713 and the second hole 723 can be connected to each other.

[0247] After that, as Figure 13As shown, the sacrificial pattern 731 can be selectively removed. The sacrificial pattern 731 can be removed by a wet etching process. Because the sacrificial pattern 731 has high etching selectivity relative to the first molding layer 710 and the second molding layer 720, the sacrificial pattern 731 can be selectively removed.

[0248] The sacrificial pattern 731 can be removed to form a through hole 740 including a first hole 713 and a second hole 723 in the first molding layer 710 and the second molding layer 720. That is, the through hole can be formed by connecting the first hole 713 and the second hole 723 to each other.

[0249] Reference Figure 14 A data storage layer 750 and a semiconductor layer 760 are formed in the through-hole 740.

[0250] The data storage layer 750 can be formed by deposition on the inner surface of the through-hole 740. The data storage layer 750 can be disposed along the contour of the inner surface of the through-hole 740. The data storage layer 750 can be stacked along the contour of the inner surface of the through-hole 740. The data storage layer 750 can have a high dielectric constant. The data storage layer 750 can comprise silicon oxide, silicon nitride, or silicon oxynitride.

[0251] Semiconductor layer 760 can be formed by deposition on data storage layer 750. Semiconductor layer 760 can be disposed along the contour of the exposed surface of data storage layer 750. Semiconductor layer 760 can be stacked along the contour of the exposed surface of data storage layer 750. Semiconductor layer 760 can contain semiconductor material, such as monocrystalline silicon, polycrystalline silicon, organic semiconductor material, or carbon nanomaterial.

[0252] In addition, the gap filling material 770 can be filled in the semiconductor layer 760.

[0253] Semiconductor layer 760 can be used as a channel in a semiconductor device according to an embodiment. Semiconductor layer 760 can be used as a channel in a non-volatile memory device such as NAND flash memory.

[0254] Reference Figures 15 to 18 In order to manufacture the semiconductor device according to the embodiment, the following process can be performed.

[0255] like Figure 15 As shown, in order to manufacture the semiconductor device according to the embodiment, a first active pattern 810 and a second active pattern 820 may be formed on the semiconductor substrate 600. The first active pattern 810 and the second active pattern 820 may be spaced apart from each other.

[0256] The first active pattern 810 and the second active pattern 820 may protrude from the semiconductor substrate 600. The first active pattern 810 and the second active pattern 820 may be formed by etching a portion of the semiconductor substrate 600. The first active pattern 810 and the second active pattern 820 may be epitaxial layers formed on the semiconductor substrate 600.

[0257] The first active pattern 810 and the second active pattern 820 can be used as channels in a semiconductor device according to an embodiment. The first active pattern 810 and the second active pattern 820 can be used as channels in field-effect transistors formed in a logic device.

[0258] like Figure 16 As shown, a first gap-filling layer 831 is formed to cover the first active pattern 810 and the second active pattern 820. The first gap-filling layer 831 may cover the first active pattern 810 and the second active pattern 820. The first gap-filling layer 831 may cover the side surfaces of the first active pattern 810 and the second active pattern 820. The first gap-filling layer 831 may contain amorphous carbon.

[0259] The first gap-filling layer 831 can be formed from acetylene gas supplied from an acetylene supply device. The acetylene gas can be used to form the first gap-filling layer 831 via a chemical vapor deposition process.

[0260] like Figure 17 As shown, a second gap filling layer 832 is formed on the first gap filling layer 831. The second gap filling layer 832 can fill the space between the first active pattern 810 and the second active pattern 820.

[0261] The second interstitial filling layer 832 can be formed from acetylene gas supplied from an acetylene supply device. The acetylene gas can be used to form the second interstitial filling layer 832 via a chemical vapor deposition process. The second interstitial filling layer 832 can contain amorphous carbon.

[0262] Therefore, a gap-filling insulating layer 830 is formed, comprising a first gap-filling layer 831 and a second gap-filling layer 832.

[0263] like Figure 17 As shown, the gap-filling insulating layer 830 can be etched back.

[0264] Because of the etch-back process, the gap-filling insulation layer 830 can be adjusted to have a predetermined thickness.

[0265] The first gap-filling layer 831 and the second gap-filling layer 832 are formed from acetylene gas contained in an acetylene solution according to the embodiment. Therefore, the first gap-filling layer 831 and the second gap-filling layer 832 can be densely filled in the fine gaps.

[0266] Because the solvent has a suitable Henry's constant, acetylene can be appropriately dissolved. Therefore, the composition for manufacturing a semiconductor device according to the embodiments can contain an increased content of acetylene. Furthermore, the composition for manufacturing a semiconductor device according to the embodiments can supply high-purity acetylene to the semiconductor device manufacturing process for forming an amorphous carbon film.

[0267] Furthermore, the solvent can have a suitable vapor pressure. Therefore, the composition for manufacturing a semiconductor device according to the embodiments can contain an increased content of acetylene. Furthermore, the composition for manufacturing a semiconductor device according to the embodiments can supply high-purity acetylene to the semiconductor device manufacturing process for forming an amorphous carbon film.

[0268] Furthermore, the solvent can have a suitable boiling point. Therefore, the composition for manufacturing a semiconductor device according to the embodiments can contain an increased content of acetylene. Furthermore, the composition for manufacturing a semiconductor device according to the embodiments can supply high-purity acetylene to the semiconductor device manufacturing process for forming an amorphous carbon film.

[0269] Furthermore, the composition for manufacturing a semiconductor device according to the embodiments may contain an appropriate amount of water.

[0270] Furthermore, the composition for manufacturing a semiconductor device according to the embodiments may contain an appropriate amount of carbon dioxide.

[0271] Furthermore, the composition for manufacturing a semiconductor device according to the embodiments may contain an appropriate amount of oxygen.

[0272] Furthermore, the composition for manufacturing a semiconductor device according to the embodiments may contain an appropriate amount of nitrogen.

[0273] Furthermore, the composition for manufacturing a semiconductor device according to the embodiments may contain an appropriate amount of hydrogen.

[0274] Furthermore, the composition for manufacturing a semiconductor device according to the embodiments may contain an appropriate amount of hydrocarbon gas other than acetylene.

[0275] Furthermore, the composition for manufacturing a semiconductor device according to the embodiments may contain an appropriate amount of metal.

[0276] Therefore, the composition for manufacturing a semiconductor device according to the embodiments can supply acetylene having a composition suitable for semiconductor processes used to form amorphous carbon films. Thus, the composition for manufacturing a semiconductor device according to the embodiments can provide a semiconductor device with fewer defects.

[0277] Furthermore, the semiconductor device manufacturing apparatus according to the embodiments may include a filter unit. Therefore, the semiconductor device manufacturing apparatus according to the embodiments can effectively remove fine particles originating from porous fillers.

[0278] Therefore, the semiconductor device manufacturing equipment according to the embodiments can provide semiconductor devices with fewer defects.

[0279] Furthermore, the features, structures, effects, etc., described in the embodiments are included in at least one embodiment of the present invention, and are not necessarily limited to one embodiment. Moreover, the features, structures, effects, etc., shown in each embodiment can be implemented by those skilled in the art in combination with or modified from other embodiments. Therefore, anything related to these combinations and modifications should be interpreted as being included within the scope of the present invention.

[0280] While the foregoing has primarily described embodiments, this is merely an example and does not limit the invention. Those skilled in the art will recognize that various modifications and applications not illustrated above can be made without departing from the essential characteristics of these embodiments. For example, each component specifically shown in the embodiments can be modified and implemented. Furthermore, variations and differences associated with modifications and applications should be interpreted as being included within the scope of the invention as defined in the appended claims.

[0281] Preparation Example Acetylene (manufactured by Merk) Tris(N,N-tetramethylene)phosphonic triamide (TPPA, CAS No. 6415-07-2, manufactured by Sigma-Aldrich)

[0282] Triethyl phosphate (TMP, CAS No. 121-45-9, manufactured by Sigma-Aldrich)

[0283] Triethyl phosphate (TEP, CAS No. 78-40-0, manufactured by Sigma-Aldrich)

[0284] γ-Butyrolactone (GBL, CAS No. 96-48-0, manufactured by Sigma-Aldrich)

[0285] Acetone (manufactured by Kumho P&B Company) As shown in Tables 1 and 2 below, the content of each component in each raw material is based on weight.

[0286] [Table 1]

[0287] [Table 2]

[0288] Acetylene storage equipment #1 to #4 Approximately 50 The stainless steel container is filled with zeolite and then TPPA, TMP, TEP or GBL respectively, and then acetylene is added at a pressure of 300 psi.

[0289] Example 1 An acetylene storage device #1 with applied TPPA was connected to the plasma chemical vapor deposition chamber. A HEPA filter was installed between the deposition chamber and the acetylene storage device. A silicon wafer with a silicon oxide layer formed on it was then placed in the deposition chamber via the acetylene supply device. Acetylene was then introduced into the deposition chamber at a flow rate of approximately 3000 sccm, nitrogen at a flow rate of approximately 500 sccm, and helium at a flow rate of approximately 300 sccm. Subsequently, a low-frequency power of approximately 100 kHz was applied at an output of approximately 500 W, and a high-frequency power of approximately 30 MHz was applied at an output of approximately 1000 W. Furthermore, the pressure within the deposition chamber was approximately 10 Torr, and the temperature within the deposition chamber was approximately 300 °C. This resulted in the formation of an amorphous carbon layer on the silicon wafer.

[0290] Examples 2 to 4 and Comparative Examples Amorphous carbon layers were formed using acetylene storage devices #2 to #4, which were respectively coated with trimethyl phosphite, triethyl phosphate, and γ-butyrolactone, as solvents.

[0291] Evaluation Example 1. Solvent dissolution amount Acetylene was dissolved and collected from the acetylene supply unit at a temperature of approximately 20°C and atmospheric pressure. The collected acetylene was then analyzed by gel permeation chromatography, and the residual solvent content in the collected acetylene was measured based on its total weight.

[0292] 2. Moisture content in the solvent The water content in the solvent was measured using the Karl Fischer method.

[0293] 3. Dissolved gas content in the solvent The solvent is heated and measured by gas chromatography.

[0294] 4. Number of defects in the amorphous carbon layer The number of surface defects in the carbon layer was measured using a TEM (JEM-F200, JEOL).

[0295] As shown in Table 3 below, the solvent dissolution amount and the number of defects according to the embodiments were measured.

[0296] [Table 3]

[0297] As shown in Table 3, the solvent and method of manufacturing the semiconductor device according to the embodiments can provide a semiconductor device with fewer defects.

Claims

1. A composition for manufacturing a semiconductor device, the composition comprising: Acetylene; and Solvent used to dissolve the acetylene in, The composition contains less than 2000 ppm of water based on the total weight of the composition.

2. The composition for manufacturing a semiconductor device according to claim 1, wherein, The solvent has a relative concentration of 0.25 mol / (m / (m / g) at room temperature with respect to the acetylene. Henry's constant (·atm).

3. The composition for manufacturing a semiconductor device according to claim 1, wherein, The solvent has a dipole moment of less than 2.8 Debye.

4. The composition for manufacturing a semiconductor device according to claim 1, wherein, The solvent has a vapor pressure of less than 500 Pa at 20°C.

5. The composition for manufacturing a semiconductor device according to claim 1, wherein, The solvent has a molecular weight exceeding 75 g / mol.

6. The composition for manufacturing a semiconductor device according to claim 1, wherein, The solvent has a flash point exceeding 60°C.

7. The composition for manufacturing a semiconductor device according to claim 1, wherein, The composition contains less than 1000 ppm of carbon dioxide based on the total weight of the composition.

8. The composition for manufacturing a semiconductor device according to claim 7, wherein, The composition contains less than 1000 ppm of oxygen based on the total weight of the composition.

9. The composition for manufacturing a semiconductor device according to claim 8, wherein, The composition contains less than 1000 ppm of nitrogen gas based on the total weight of the composition.

10. The composition for manufacturing a semiconductor device according to claim 9, wherein, The composition contains less than 2000 ppm of hydrogen gas based on the total weight of the composition.

11. The composition for manufacturing a semiconductor device according to claim 10, wherein, The composition contains less than 1000 ppm of hydrocarbon gases other than acetylene based on the total weight of the composition.

12. The composition for manufacturing a semiconductor device according to claim 11, wherein, The composition contains less than 1 ppm of hydrocarbon gases other than acetylene based on the total weight of the composition.

13. The composition for manufacturing a semiconductor device according to claim 1, wherein, The solvent is selected from at least one of the following: tris(N,N-tetramethylene)phosphonic triamide, hexamethylphosphonic triamine, N,N,N',N'-tetramethylmethylphosphonidamide, dimethyl sulfoxide, tetramethylene sulfoxide, tetramethylurea, dimethylacetamide, acetylpyrrolidine, acetaldehyde, tris(tetramethylene)phosphonamide, dimethoxymethane, methyl formate, methyl acetate, trimethyl phosphite, triethyl phosphate, tetramethyldiaminophosphonic fluoride, tetraethylene glycol dimethyl ether, ethyl acetate, diethylformamide, ethyl formate, methyl dimethylcarbamate, 1-formyl Pyrrolidone, bromoethane, γ-butyrolactone, N,N,N',N'-tetramethylamino-aminoacetamide, ethylene oxide, glyoxal tetramethyl acetal, acetonitrile, diethyl oxalate dimethyl acetal, methyl orthoacetate, trimethyl thiophosphate, 2-methyl-2-methoxy-1,3-dioxolane, γ-valerolactone, methyl propionate, nitromethane, nitrobenzene, N,N'-dimethylimidazolium ketone, propylene carbonate, butenyl carbonate, dimethyl carbonate, ethyl methyl carbonate, diethyl carbonate, N-ethylpyrrolidone, n-butyl acetate, sec-butyl acetate, or trimethyl phosphate.

14. A method for manufacturing a semiconductor device, the method comprising: Prepare a composition comprising acetylene and a solvent for dissolving the acetylene; Acetylene dissolved from the composition is introduced into the chamber; as well as An amorphous carbon film is formed on a semiconductor substrate using the acetylene introduced into the chamber. The composition contains less than 2000 ppm of water based on the total weight of the composition.

15. The method for manufacturing a semiconductor device according to claim 14, wherein, An etching target layer is provided between the semiconductor substrate and the amorphous carbon layer, and The amorphous carbon layer is used as a hard mask layer to etch the target layer.

16. The method for manufacturing a semiconductor device according to claim 14, wherein, Holes are formed on the semiconductor substrate, and The amorphous carbon film is filled into the pores.

17. The method for manufacturing a semiconductor device according to claim 14, wherein, The semiconductor substrate includes a pattern, and The amorphous carbon layer covers the pattern.

18. The method for manufacturing a semiconductor device according to claim 14, wherein, During the formation of the amorphous carbon film, the temperature inside the chamber is in the range of 500°C to 600°C, the flow rate of the acetylene supplied to the chamber is in the range of 100 sccm to 3000 sccm, and 100 sccm to 3000 sccm of hydrogen gas is supplied to the chamber together with the acetylene.

19. An apparatus for manufacturing a semiconductor device, the apparatus comprising: container; Porous packing material disposed in the container; and The composition injected into the container The composition comprises: Solvent; and Acetylene dissolved in the solvent The composition contains less than 2000 ppm of water based on the total weight of the composition.

20. The apparatus for manufacturing a semiconductor device according to claim 19, the apparatus further comprising: A filter unit is connected to the container and is configured to filter acetylene discharged from the container.

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