Chamber and method for downstream residue management

Abstract

Semiconductor processing chambers and systems, and methods of cleaning such chambers and systems, are provided. The processing chambers and systems include a chamber body defining a processing region, an inner liner positioned within the chamber body, the inner liner defining an inner liner volume, a faceplate positioned atop the inner liner, a substrate support disposed within the chamber body, and a cleaning gas source coupled with the inner liner volume through a cleaning gas plenum and one or more inlet holes. The systems and chambers include instances in which at least one of the one or more inlet holes is disposed in the processing region between the faceplate and a bottom wall of the chamber body.

Description

Technical Field

[0001] This application claims the benefit and priority of U.S. Patent Application No. 18 / 538,100, filed December 13, 2023, entitled "CHAMBER AND METHODS FOR DOWNSTREAM RESIDUE MANAGEMENT," which claims the benefit and priority of Indian Patent Application No. 202341074084, filed October 31, 2023, entitled "CHAMBER AND METHODS FOR DOWNSTREAM RESIDUE MANAGEMENT," the entire contents of which are incorporated herein by reference.

[0002] This technology relates to semiconductor processes and equipment. More specifically, this technology relates to substrate processing systems and components. Background Technology

[0003] Integrated circuits can be fabricated by creating complex patterned material layers on a substrate surface. Creating patterned materials on a substrate requires controlled methods for material formation and removal. Chamber components typically deliver process gases to the substrate for film deposition or material removal. To improve symmetry and uniformity, some chambers include remote plasma sources to generate high-power plasma without damaging the substrate. However, these plasma sources are generally located upstream of the spray head and / or baffles, thus limiting the plasma radicals reaching the chamber.

[0004] Therefore, there is a need for improved systems and methods for effectively cleaning the downstream portions of semiconductor chambers. These and other needs are addressed by this technology. Summary of the Invention

[0005] This technology generally relates to a substrate processing system and method for processing semiconductor substrates. The processing system includes: a chamber body defining a processing area; a liner positioned within the chamber body, defining a liner volume; a panel positioned on top of the liner; and a substrate support disposed within the chamber body. The system includes a cleaning gas source coupled to the liner volume via a cleaning gas chamber and one or more inlet holes. The system includes a configuration where at least one of the one or more inlet holes is located within the processing area between the panel and the bottom wall of the chamber body.

[0006] In embodiments, the system includes a clean gas source vertically positioned below the chamber body. In several embodiments, one or more inlet holes extend through the sidewalls of the chamber body. Furthermore, in embodiments, the liner includes an outer liner portion and an inner liner portion, wherein the liner volume is defined between the outer and inner liner portions. As a supplementary or alternative, embodiments include a case where the outer liner portion extends around the inner periphery of the chamber body. Furthermore, in embodiments, the inner liner portion is laterally spaced from the outer liner portion in a direction toward the substrate support. In embodiments, one or more inlet holes extend through the outer liner portion. In further embodiments, one or more inlet holes extend through the sidewalls of the chamber body at a height of approximately 10% to approximately 90% of the total height of the sidewalls. In embodiments, the system includes an exhaust outlet disposed within the liner volume.

[0007] This technology also broadly pertains to substrate processing systems. The system includes: a chamber having a chamber body defining a processing area; a liner positioned by the chamber body and defining a liner volume; a panel positioned on top of the liner; and a substrate support disposed within the chamber body. The system includes a cleaning gas source disposed below the chamber body and coupled to the liner volume through one or more inlet holes in the chamber body. The system includes a configuration where at least one of the one or more inlet holes is located within the processing area. The system includes a support frame, wherein the cleaning gas source is situated on the support frame, and the support frame is pivotally mounted to a lateral side of the chamber body.

[0008] In embodiments, the system includes a support frame comprising a bottom surface having a first plate and a second plate, wherein one or more tension members support the second plate on top of the first plate. In further embodiments, at least one of the tension members includes a spring attached to the first plate. Additionally, in embodiments, the processing system includes two or more chambers, wherein a clean gas source is fluidly coupled to each of the two or more chambers. In further embodiments, the clean gas source includes a processing position where the clean gas source is positioned along the central axis of the chamber. As a supplement or alternative, in embodiments, the system includes one or more auxiliary mounting plates attached to the lateral side of the chamber body between the central axis of the chamber and the lateral edge of the chamber. In several embodiments, one or more auxiliary mounting plates are configured to receive the clean gas source in a second position.

[0009] This technology also broadly addresses semiconductor processing methods. The methods include flowing a cleaning gas or plasma precursor through a spray head into a processing region of a semiconductor processing chamber. The methods include cases where the semiconductor processing chamber contains a liner positioned by the processing region, the liner defining a liner volume, and a cleaning gas source is directly coupled to the liner volume through a cleaning gas chamber and one or more inlet orifices. The methods also include cases where at least one of the one or more inlet orifices is located within the processing region. The methods further include flowing a second cleaning gas through one or more inlet orifices and discharging the second cleaning gas through the liner volume.

[0010] In one embodiment, the method includes flowing a cleaning gas into a processing region and simultaneously flowing a second cleaning gas into a semiconductor processing chamber. In several embodiments, a plasma precursor flows into the processing region, wherein the second cleaning gas and the plasma precursor flow simultaneously into the semiconductor processing chamber. Furthermore, in one embodiment, the plasma precursor includes a carbon-containing precursor.

[0011] These technologies can offer numerous advantages over conventional systems and techniques. For example, the treatment system can provide independent cleaning capabilities that reduce residues at downstream locations. Furthermore, these processes can be combined with existing cleaning operations, allowing for enhanced cleaning, either alone or in combination with reduced cleaning gas utilization. These and other embodiments, along with numerous advantages and features, are described in more detail below with reference to the figures. Attached Figure Description

[0012] A further understanding of the nature and advantages of the disclosed technology can be achieved by referring to the remainder of the specification and the drawings.

[0013] Figure 1 The illustration shows a top plan view of an exemplary processing system according to an embodiment of the present technology.

[0014] Figure 2 An isometric schematic diagram of the transfer area of ​​an exemplary chamber system according to an embodiment of the present technology is illustrated.

[0015] Figure 3 A partial isometric view of a chamber system according to an embodiment of the present technology is illustrated.

[0016] Figure 4 The illustration shows a partial cross-sectional schematic diagram of an exemplary chamber system according to an embodiment of the present technology.

[0017] Figure 5 The illustration shows a partial cross-sectional schematic diagram of an exemplary chamber system according to an embodiment of the present technology.

[0018] Figure 6 The illustration shows a schematic diagram of an exemplary chamber system according to some embodiments of the present technology.

[0019] Figure 7 The illustration shows a partial cross-sectional schematic diagram of an exemplary chamber system according to an embodiment of the present technology.

[0020] Figure 8A The illustration shows a top view of an exemplary chamber system according to an embodiment of the present technology.

[0021] Figure 8B The illustration shows a chamber system according to an embodiment of the present technology.

[0022] Figure 8C The illustration shows a chamber system according to an embodiment of the present technology, wherein a clean remote plasma source is located in the chamber in / out position.

[0023] Figure 9 The illustration shows the operation of an exemplary method for processing a substrate according to some embodiments of the present technology.

[0024] Several figures in the figures are included as illustrations. It should be understood that the figures are for illustrative purposes and are not intended to be to scale or proportionate unless expressly stated otherwise. In addition, the figures are provided as illustrations to aid understanding and may not include all aspects or information compared to actual representations, and may include exaggerated material for illustrative purposes.

[0025] In the accompanying drawings, similar parts and / or features may have the same component symbol. Furthermore, various parts of the same type can be distinguished by a letter following the component symbol to differentiate them. If only the first component symbol is used in the specification, the description applies to any similar parts having the same first component symbol, regardless of the letter. Detailed Implementation

[0026] Particulate contamination within semiconductor chambers is typically controlled by periodically cleaning the chamber with a cleaning gas (e.g., a fluorinated or oxygen-containing compound) that is excited to form an inductively or capacitively coupled plasma. The cleaning gas is selected based on its ability to combine precursor gases with deposited materials formed on chamber components or retained within the chamber processing volume to create stable volatile products that can be evacuated from the chamber, thus cleaning the process environment. However, these existing cleaning solutions require purging the entire chamber between processes, utilizing large volumes of cleaning gas and allowing significant deposit formation between cleaning cycles.

[0027] Furthermore, existing plasma cleaning gases are generated upstream of the processing chamber. Therefore, such cleaning devices and methods require the cleaning gas to pass through one or more components (e.g., panels and baffles) to reach the processing area. Due to the orientation of the plasma source upstream of the processing area, existing cleaning processes typically cannot effectively clean around the pump liner and discharge device, as well as the underside of the panel. That is, due to the length of the flow path and the large exposed surface area on the panel, most of the free radicals generated recombine when the cleaning gas flows into the chamber. Therefore, current cleaning methods typically cannot adequately clean the underside of the panel (e.g., the surface-facing processing area), the pump liner, the isolator, and the discharge valve (illustrated only), all of which may be referred to herein as chamber components.

[0028] To clean contaminated chambers, which frequently occurs when using carbon-based precursors that exhibit a high risk of component contamination, the chambers must be cooled to a temperature at which the cleaning gas no longer interacts with the chamber components. Clearly, this type of process requires a relatively long self-cleaning time to remove the chamber. After the chamber has cooled and the process gas has been sufficiently removed, and cleaning byproducts have been discharged, a process curing process is performed to deposit a film onto the components forming the process volume of the chamber, in order to seal any remaining contaminants and reduce contamination levels during processing. This process is typically carried out by depositing a process curing film to coat the internal surfaces of the process volume used to form the chamber. Therefore, this type of process requires significant downtime and product usage.

[0029] This technology overcomes these and other problems by fluidly connecting a separate clean gas source (e.g., a remote plasma source "RPS") to one or more chambers via a modified pump-suction liner. The modified pump-suction liner may contain an inlet in the lower region of the chamber's processing area (e.g., below the panel). By utilizing this arrangement, clean gas generated by an additional clean gas source (e.g., the RPS in addition to those used for conventional cleaning or providing process precursors) can contact one or more chamber components below the spray head, such as the pump-suction liner, the underside of the spray head, and exhaust lines and valves (illustrated by way of example only), without having a primary passage through the spray head or baffle. Furthermore, due to the unique location of the clean gas source and the pump-suction liner outlet, the RPS can be installed below the chamber, thus not requiring an increased system footprint, while simultaneously providing the desired short flow path. The modified pump-suction liner, fluidly connected to an additional separate clean gas source, also allows for the generation and flow of additional clean gas during conventional cleaning processes or deposition processes, thereby reducing the volume of clean gas required to clean the chamber and its components. Therefore, the additional clean gas source and the unique orientation of the pump liner discussed in this article allow the clean gas to react with the residue during or after treatment, resulting in gas emissions that do not contaminate the components.

[0030] While the remainder of the disclosure will routinely identify specific structures that can employ this architecture and method, such as a four-position chamber system, it will be readily understood that the system and method are equally applicable to any number of structures and devices that can benefit from the capabilities of the explained architecture. Therefore, the technology should not be considered limited to use alone with any particular architecture. Furthermore, although exemplary tool systems will be described to provide a basis for this technology, it should be understood that this technology can and has any number of semiconductor processing chambers and tools that can benefit from some or all of the operations and systems described.

[0031] Figure 1 The illustration shows a top plan view of one embodiment of a substrate processing tool or system 100 having deposition, etching, baking, and curing chambers according to some embodiments of the present technology. In the figure, a set of front-opening wafer transfer cassettes 102 supplies substrates of various sizes, which are received by robotic arms 104a and 104b into a factory interface 103 and placed in a load lock or low-pressure holding area 106 before being delivered to one of the substrate processing areas 108. The substrate processing areas 108 are located in a chamber system or quadruple zones 109a to 109c, which may each be a substrate processing system in which a transfer area is fluidly coupled to multiple processing areas 108. Although a quadruple system is illustrated, it should be understood that the present technology equally encompasses platforms incorporating independent chambers, dual chambers, and other multiple chamber systems. A second robotic arm 110, mounted in transfer chamber 112, can be used to transfer a substrate wafer from holding region 106 to quadruple region 109 and back. The second robotic arm 110 can be mounted in the transfer chamber, wherein each of the quadruple region or processing system can be connected to the transfer chamber. Each substrate processing region 108 can be equipped to perform several substrate processing operations, including any number of deposition processes, including cyclic layer deposition, atomic layer deposition, chemical vapor deposition, physical vapor deposition, as well as etching, pre-cleaning, annealing, plasma treatment, degassing, orientation, and other substrate processes.

[0032] Each quadruple zone 109 may include a transfer area that can receive and deliver a substrate to a second robotic arm 110. The transfer areas of the chamber system may be aligned with transfer chambers having the second robotic arm 110. In some embodiments, the robot may laterally enter and exit the transfer area. In subsequent operations, components of the transfer area may vertically translate the substrate into the upper processing area 108. Similarly, the transfer areas may also be operable to rotate the substrate between positions within each transfer area. The substrate processing area 108 may include any number of system components for depositing, annealing, curing, and / or etching material films on a substrate or wafer. In one configuration, two sets of processing areas (e.g., processing areas in quadruple zones 109a and 109b) may be used to deposit material on the substrate, and a third set of processing chambers (e.g., processing chambers or areas in quadruple zone 109c) may be used to cure, anneal, or process the deposited film. In another configuration, all three sets of chambers (e.g., all twelve chambers illustrated) can be configured to deposit and / or cure films on a substrate.

[0033] As illustrated in the figure, the second robotic arm 110 may include two arms for simultaneously delivering and / or retrieving multiple substrates. For example, each quadruple zone 109 may include two inlets 107 along the surface of the housing of the transfer area, and the two inlets 107 may be laterally aligned with the second robotic arm. The inlets and outlets may be defined along the surface adjacent to the transfer chamber 112. In some embodiments, as in the illustrated embodiment, the first inlet and outlet may be aligned with a first substrate support among the multiple substrate supports of the quadruple zone. Additionally, the second inlet and outlet may be aligned with a second substrate support among the multiple substrate supports of the quadruple zone. In some embodiments, the first substrate support may be adjacent to the second substrate support, and the two substrate supports may define a first column of substrate supports. As shown in the illustrated configuration, the second column of substrate supports may be positioned laterally outward from the transfer chamber 112 after the first column of substrate supports. The two arms of the second robotic arm 110 may be spaced apart to allow both arms to simultaneously enter the quadruple zone or chamber system to deliver or retrieve one or two substrates to the substrate supports within the transfer area.

[0034] Any one or more of the described transfer regions may have additional chambers separate from the manufacturing systems shown in the various embodiments. It should be understood that processing system 100 encompasses additional configurations of chambers for material film deposition, etching, annealing, and curing. Additionally, any number of other processing systems may be used in this technology, and these other processing systems may have transfer systems for performing any operation in a specific operation, such as substrate movement. In some embodiments, the processing system may provide inlets and outlets to multiple processing chamber regions while maintaining a vacuum environment in each region (e.g., the aforementioned holding and transfer regions), allowing operations to be performed in multiple chambers while maintaining a specific vacuum environment between discrete processes.

[0035] As mentioned, the processing system 100, or more specifically, the four-section or chamber system of the processing system 100 or other processing systems, may include a transfer section located below the processing chamber region illustrated. Figure 2 An isometric schematic diagram of the transfer area of ​​an exemplary chamber system 200 according to some embodiments of the present technology is shown. Figure 2 Additional aspects or variations of the transfer area described above may be illustrated, and may include any of the described components or characteristics. The illustrated system may include a transfer area housing 205, which may be a chamber body, as further discussed below, thereby defining a transfer area that may include several components. The transfer area may additionally be connected to a processing chamber or processing area (e.g., fluidly coupled to the transfer area) Figure 1 The processing chamber region 108 (illustrated in the quadruple zone 109) is defined at least partially from above. The sidewalls of the transfer area housing may define one or more access points 207 through which substrates can be delivered and retrieved, as discussed above, via a second robotic arm 110 passing through one or more access points 207. In some embodiments, the access point 207 may be a slit valve or other sealable access point, including a door or other sealing mechanism to provide an airtight environment within the transfer area housing 205. Although illustrated with two such access points 207, it should be understood that in some embodiments, there may be only a single access point 207, as well as access points on multiple sides of the transfer area housing. It should also be understood that the illustrated transfer area can accommodate any substrate size, including substrates of 200 mm, 300 mm, 450 mm or larger or smaller, including substrates having any number of geometries or shapes.

[0036] Multiple substrate supports 210, positioned around the volume of the transfer area, may be located within the transfer area housing 205. Although four substrate supports are illustrated, it should be understood that embodiments of the present technology similarly encompass any number of substrate supports. For example, a transfer area according to embodiments of the present technology may accommodate more than or about three, four, five, six, eight, or more substrate supports 210. A second robotic arm 110 may deliver substrates through inlet / outlet 207 to either or both of substrate supports 210a or 210b. Similarly, the second robotic arm 110 may remove substrates from these locations. Lifting pins 212 may protrude from substrate supports 210 and may allow the robot to move in and out under the substrate. In some embodiments, the lifting pins may be fixed to the substrate supports or located in a position where the substrate supports may be recessed below, or the lifting pins may additionally lift or lower through the substrate supports. The substrate support 210 may be vertically translatable, and in some embodiments, it may extend upward to a processing chamber region, such as processing chamber region 108, located above the transfer area housing 205 of the substrate processing system.

[0037] The transfer area housing 205 may provide inlet / outlet 215 for an alignment system, which may include an aligner extending through an aperture (as illustrated) in the transfer area housing and may be operated in conjunction with a laser, camera, or other monitoring device protruding or conveying through adjacent apertures to determine whether the substrate being translated is properly aligned. The transfer area housing 205 may also include a transfer device 220, which may operate in various ways to position substrates and move substrates between various substrate supports. In one example, the transfer device 220 may move substrates on substrate supports 210a and 210b to substrate supports 210c and 210d, thus allowing additional substrates to be delivered into the transfer chamber. Additional transfer operations may include rotating substrates between substrate supports for additional processing in the upper processing area.

[0038] The transfer device 220 may include a central hub 225, which may include one or more shafts extending into the transfer chamber. An end effector 235 may be coupled to the shafts. The end effector 235 may include a plurality of arms 237 extending radially or laterally outward from the central hub. Although illustrated as arms extending from a central body, in various embodiments, the end effector may additionally include separate arms, each coupled to a shaft or the central hub. Embodiments of this technology may include any number of arms. In some embodiments, the number of arms 237 may be similar to or equal to the number of substrate supports 210 included in the chamber. Thus, as shown, for four substrate supports, the transfer device 220 may include four arms extending from the end effector. The arms may have any number of shapes or profiles, such as straight or arcuate profiles, and may include any number of remote profiles, including hooks, loops, forks, or other designs for supporting substrates and / or providing substrate pickup (e.g., for alignment or engagement).

[0039] End effector 235, or a component or portion of an end effector, may be used to contact a substrate during transfer or movement. These components and end effectors may be made of or comprise several materials, including conductive and / or insulating materials. In some embodiments, the material may be coated or electroplated to withstand contact with precursors or other chemicals that may be transferred from an upper processing chamber to a transfer chamber.

[0040] Additionally, materials can be provided or selected to withstand other environmental characteristics, such as temperature. In some embodiments, the substrate support can be operated to heat the substrate disposed on the support. The substrate support can be configured to raise the surface or substrate temperature to greater than or about 100°C, greater than or about 200°C, greater than or about 300°C, greater than or about 400°C, greater than or about 500°C, greater than or about 600°C, greater than or about 700°C, greater than or about 800°C, or higher. Any of these temperatures can be maintained during operation, and therefore components of the transfer device 220 may be exposed to any of these said or covered temperatures. Therefore, in some embodiments, any material can be selected to accommodate these temperature ranges and may include materials that may have a relatively low coefficient of thermal expansion or other beneficial properties, such as ceramics and metals.

[0041] Component connectors can also be used for operation in high-temperature and / or corrosive environments. For example, when the end effector and end portion are each ceramic, the connector may include a press-fit, a snap-fit, or other fitting that may not include additional material such as bolts, which may expand and contract with temperature and may cause the ceramic to crack. In some embodiments, the end portion may be connected to the end effector and may be integrally formed with the end effector. Any number of other materials that can facilitate handling or provide resistance during operation can be utilized, and this technology similarly covers any number of such other materials. The transfer device 220 may include several components and configurations that facilitate movement of the end effector in multiple directions, which may facilitate rotational, vertical, or lateral movement of drive system components that may be coupled to the end effector in one or more ways.

[0042] Figure 3 A partial isometric schematic diagram of a chamber system 300 according to some embodiments of the present technology is illustrated. The figure may illustrate a partial cross-sectional view through a portion of two processing regions and a transfer region of the chamber system. For example, the chamber system 300 may be a quadrilateral portion of the processing system 100 described above, and may include any component of any of the components or systems described above.

[0043] The chamber system 300 developed as shown in the figure may include a chamber body 305 defining a transfer region 502 including a substrate support 310, which may extend into the chamber body 305 and be vertically translatable, as previously described. A first cover plate 405 may be situated on the chamber body 305 and may define an aperture 410 that creates an inlet / outlet for a processing region 504 to be formed with additional chamber system components. A cover stack 505 may be situated around or at least partially situated within each aperture, and the chamber system 300 may include a plurality of cover stacks 505, including a number of cover stacks equal to the number of apertures 410 in the plurality of apertures. Each cover stack 505 may be situated on the first cover plate 405 and may be situated on a partition created by a recessed lug through a second surface of the first cover plate. The cover stack 505 may at least partially define the processing region 504 of the chamber system 300.

[0044] As illustrated, processing region 504 may be vertically offset from transfer region 502, but may be fluidly coupled to transfer region. Additionally, processing region may be separate from other processing regions. While processing region may be fluidly coupled to other processing regions from below through transfer region, processing region may be fluidly isolated from each of the other processing regions from above. In some embodiments, each cover stack 505 may also be aligned with a substrate support. For example, as illustrated, cover stack 505a may be aligned over substrate support 310a, and cover stack 505b may be aligned over substrate support 310b. When raised to an operating position (e.g., a second position), substrate may be delivered for individual processing within the independent processing region. When in this position, as will be further described below, each processing region 504 may be at least partially defined in the second position from below by the associated substrate support.

[0045] Figure 3 An embodiment may also be illustrated, which may include a second cover plate 510 for use in a chamber system. In some embodiments, the second cover plate 510 may be coupled to each of a cover stack, which may be positioned between the first cover plate 405 and the second cover plate 510. As will be explained below, the second cover plate 510 may facilitate access to components of the cover stack 505. The second cover plate 510 may define a plurality of holes 512 through which the second cover plate passes. Each of the plurality of holes may be defined to provide fluid access to or from a specific cover stack 505 or processing region 504. In some embodiments, the chamber system 300 may include a remote plasma unit 515, which may be supported on the second cover plate 510. Furthermore, as will be discussed in more detail below, embodiments according to the present technology include a cleaning gas source 514, which may be a separate RPS from the remote plasma unit 515 discussed above. In this embodiment, the cleaning gas source 514 may be installed below the processing area 504 and may be fluidly connected to the processing area 504 at a location below the cover stack 505. Figures 5 to 8C (This will be discussed in more detail later).

[0046] In some embodiments, the remote plasma unit 515 may be fluidly coupled through the second cover plate 510 to each of the plurality of orifices 512. An isolation valve 520 may be included along each fluid line to provide fluid control over each individual processing region 504. For example, as shown, orifice 512a may provide fluid inflow and outflow from cover stack 505a. In some embodiments, orifice 512a may also be axially aligned with any of the cover stack components and with substrate support 310a, which may form an axial alignment for each of the components associated with an individual processing region, such as along a central axis through the substrate support or any of the components associated with a particular processing region 504. Similarly, in some embodiments, orifice 512b may provide fluid inflow and outflow from cover stack 505b and may be aligned (including axially aligned) with the components of the cover stack and substrate support 310.

[0047] Figure 4 The illustration shows a cross-sectional front view of one embodiment of a chamber system 300 according to some embodiments of the present technology. Figure 4 The above can be seen in the illustration. Figure 3 The figures show a cross-sectional view and may further illustrate components of the system. The figures may include components of any of the systems previously illustrated and described, and may also show further aspects of any of the previously described systems. It should be understood that the figures may also show exemplary components visible through any two adjacent processing regions 108 of any of the four quadrants 109 described above. However, although not shown, it should be understood that, in embodiments, the components discussed herein may be applied to chambers having more or fewer than four regions, such as single-chamber regions, two-chamber regions, or other chamber regions as known in the art.

[0048] A front view may illustrate the configuration or fluid connection of one or more processing regions 504 having transfer regions 502. For example, continuous transfer regions 502 may be defined by a chamber body 305. A housing may define an open internal volume in which several substrate supports 310 may be housed. For example, as... Figure 1 As illustrated, the exemplary processing system may include four or more substrate supports 310, comprising a plurality of substrate supports 310 distributed within a chamber body surrounding a transfer region. The substrate supports may be bases as shown, although several other configurations may also be used. In some embodiments, the base may be vertically translatable between the transfer region 502 and the processing region 504 above the transfer region. The substrate supports may be vertically translatable within the chamber system along a path between a first position and a second position along the central axis of the substrate support. Thus, in some embodiments, each substrate support 310 may be axially aligned with the upper processing region 504 defined by one or more chamber components.

[0049] The open transfer area allows the transfer device 635 (e.g., a rotary rack) to engage and move substrates between various substrate supports (e.g., rotatably). The transfer device 635 may be rotatable about a central axis. This allows substrates to be positioned for processing in any area of ​​the processing region 504 within the processing system. The transfer device 635 may include one or more end effectors that can engage the substrate from above, below, or engage the outer edge of the substrate for movement around the substrate support. The transfer device may receive substrates from a transfer chamber robot (e.g., the previously described robot 110). The transfer device may then rotate the substrates to alternating substrate supports to facilitate the delivery of additional substrates.

[0050] Once positioned and awaiting processing, the transfer device can position end effectors or arms between substrate supports, allowing the substrate supports to be lifted through the transfer device 635 and the substrate delivered into processing area 504, which can be offset perpendicularly from transfer area 502. For example, and as shown, substrate support 310a can deliver the substrate into processing area 504a, while substrate support 310b can deliver the substrate into processing area 504b. This can occur with two other substrate supports and processing areas, and in embodiments including additional substrate supports and processing areas. In this configuration, when operatively engaged for processing a substrate (e.g., in a second position), the substrate supports can define processing area 504 at least partially from below, and the processing area can be axially aligned with the associated substrate support. The processing area can be defined from above by components of cover stack 505, which can each include one or more of the illustrated components. In some embodiments, each processing region may have an individual cover stack component, although in some embodiments, the component may accommodate multiple processing regions 504. Based on this configuration, in some embodiments, each processing region 504 may be fluidly coupled to a transfer region, while being fluidly isolated from above from each other processing region within the chamber system or quadruple zone.

[0051] The cover stack 505 may include several components that facilitate the flow of precursor through the chamber system and may be at least partially contained between the first cover plate 405 and the second cover plate 510. The liner 605 may sit directly on a partition formed by each recessed lug in the first cover plate 405. For example, the liner 605 may define a lip or flange that allows the liner 605 to extend from the partition of the first cover plate 405. The liner 605 (alone or in combination with the pump liner 610) may extend vertically below a first surface of the first cover plate 405, as will be discussed in more detail below, and may extend at least partially into the open transfer area 502. The liner 605 may be made of a material similar to or different from the chamber body material and may be or include a material that restricts the deposition or retention of material on the surface of the liner 605. The liner 605 may define the inlet and outlet diameters for the substrate support 310 and may have any of the clearance amounts (including when) described above for the clearance between the substrate support 310 and the liner 605.

[0052] A pump-suction liner 610 may be situated on a liner 605, and the pump-suction liner 610 may extend at least partially within a recess or along a recessed lug defined in a second surface of the first cover plate 405. In some embodiments, the pump-suction liner 610 may be situated on a liner 605 on a partition formed by the recessed lug. The pump-suction liner 610 may be an annular component and may define a processing area 504 at least partially radially or laterally, depending on the volume geometry. The pump-suction liner may define an exhaust chamber within the liner, and the pump-suction liner may define a plurality of holes on the inner annular surface of the pump-suction liner to provide inlets and outlets to the exhaust chamber. The exhaust chamber may extend at least partially vertically above the height of the first cover plate 405, which may facilitate delivery of the discharged material through an exhaust channel formed through the first cover plate and the chamber body as previously described. However, in embodiments, as will be discussed in more detail below, all or part of the waste may exit through an exhaust port in the bottom surface of the chamber body 305. A portion of the pump liner may extend at least partially across the second surface of the first cover plate 405 to complete the discharge passage between the discharge chamber of the pump liner and the passage formed through the chamber body and the first cover plate.

[0053] Panel 615 may be situated on pump liner 610 and may define a plurality of holes through panel 615 for delivering precursors into processing region 504. Panel 615 may define the associated processing region 504 at least partially from above, and the associated processing region 504 may cooperate at least partially with the pump liner and substrate support in an elevated position to substantially define the processing region. Panel 615 may operate as an electrode of the system for generating localized plasma within processing region 504, and therefore in some embodiments, panel 615 may be coupled to a power source or may be grounded. In some embodiments, substrate support 310 may operate as a mating electrode for generating capacitively coupled plasma between panel and substrate support.

[0054] A barrier plate 620 may be situated on a panel 615. The barrier plate 620 may further distribute the processing fluid or precursor to produce a more uniform fluid distribution to the substrate. The barrier plate 620 may also define a plurality of holes through the plate. In some embodiments, the barrier plate 620 may have a diameter smaller than the diameter of the panel as shown, which may provide an annular inlet / outlet on the panel surface radially outward from the barrier plate 620. In some embodiments, a panel heater 625 may be situated on the annular inlet / outlet and may contact the panel 615 to heat components during processing or other operations. In some embodiments, the barrier plate 620 and the panel heater 625 together may have an outer radial diameter equal to or substantially equal to the outer radial diameter of the panel 615. Similarly, in some embodiments, the panel heater 625 may have an outer radial diameter equal to or substantially equal to the outer radial diameter of the panel 615. The panel heater 625 may extend around the barrier plate 620 and may or may not directly contact the barrier plate 620 on its outer radial edge.

[0055] Gas chamber 630 may be positioned above barrier plate 620, and gas chamber 630 in each cover stack 505 may at least partially support second cover plate 510. Gas chamber 630 may define a central aperture aligned with an associated aperture 512 of a plurality of apertures defined through second cover plate 510. In some embodiments, second cover plate 510 may support remote plasma unit 515, which may include conduits to each of the apertures 512 and to each processing area 504. A connector may be positioned through apertures 512 to couple remote plasma unit conduits to gas chamber 630. Additionally, in some embodiments, isolation valve 520 may be positioned within the conduits to meter flow to each individual processing area 504.

[0056] In some embodiments, O-rings or washers may be positioned between each component of the cover stack 505 to facilitate vacuum handling within the chamber system 300. Specific component connections between the first cover plate 405 and the second cover plate 510 can occur in any number of ways to facilitate access to system components. For example, a first set of connections may be incorporated between the first cover plate 405 and the second cover plate 510, facilitating the removal of both covers and each cover stack 505 to access substrate supports or transfer devices within the transfer area of ​​the chamber system. These connections may include any number of entities extending between the two covers and removable connections, allowing the connections to be separated from the chamber body 305 as a whole. For example, a drive motor on the main frame containing the chamber system 300 may be removably coupled to the second cover plate 510, the drive motor being capable of lifting components away from the chamber body 305.

[0057] When the connection between the first cover plate 405 and the second cover plate 510 is disengaged, the second cover plate 510 can be removed, while the first cover plate 405 can remain on the chamber body 305. This facilitates access to one or more components of the cover stack 505. Discontinuities can occur within the cover stack 505 between any two previously described components, some of which may be coupled to the first cover plate 405 and some of which may be coupled to the second cover plate 510. For example, in some embodiments, each of the air chambers 630 may be coupled to the second cover plate 510. Thus, when the second cover plate is lifted from the chamber system, the air chambers can be moved, thereby allowing access to the barrier plate and the panel. Continuing this example, the barrier plate 620 and the panel 615 may or may not be coupled to the first cover plate 405. For example, although mechanical connections may be included, the components can be decoupled and float on the first cover plate 405, as by positioning features that maintain proper alignment of the components. It should be understood that the examples are for non-limiting purposes and illustrate any number of discontinuous configurations between any two components of the cover stack when the second cover 510 is separated from the first cover 405. Thus, depending on the connection between the first and second covers, the entire cover stack and both covers can be removed to enter or exit the transfer area, or the second cover can be removed to receive the cover stack components.

[0058] Next, refer to Figure 5 and Figure 6 A partial cross-sectional view of a chamber system 300 according to an embodiment of the present technology. Figure 5 and Figure 6 The above can be seen in the illustration. Figure 3 and / or Figure 4The figures show a cross-sectional view and may further illustrate components of the system. The figures may include components of any of the previously illustrated and described systems, and may also illustrate further aspects of any of the previously described systems. As shown, the cleaning gas source 514 can be directly connected to the liner volume 609 of the chamber 300 via one or more inlet holes 608 vertically positioned below the panel 615. As discussed above, by utilizing such an arrangement, the cleaning gas source 514, which may include a separate remote plasma source (RPS) and any other cleaning gas source, can directly clean the chamber components without first traversing the panel 615.

[0059] That is, in embodiments, the liner 605 and / or sidewall 306 may include one or more inlet holes 608. The inlet hole 608 is illustrated as being positioned through the outer liner portion 605a and sidewall 306 at a location corresponding to a cleaning gas chamber 607 extending through the sidewall 306 of the chamber body 305. However, in embodiments, the inlet hole 608 and cleaning gas chamber 607 may be positioned at any one or more locations below the processing area 504 and / or panel 615 (e.g., between the processing area 504 / panel 615 of the chamber body 305 and the bottom wall 309), such as on the bottom wall 309. Furthermore, although only one inlet hole 608 is illustrated, in embodiments, the cleaning gas chamber may extend circumferentially around the chamber body 305 through the chamber sidewall 306, wherein one or more inlet holes 608 fluidly connect the cleaning gas chamber to the liner volume 609. Furthermore, in an embodiment, one or more inlet holes 608 may be openings in the liner 605 that extend circumferentially around all or part of the chamber body.

[0060] In embodiments, one or more liners 605 may extend along one or more sidewalls 306 of the chamber body 305 and may include an outer portion 605a and an inner portion 605b. In embodiments, the outer portion 605a may extend along the periphery of one or more sidewalls 306 in a generally vertical direction, such as extending generally around the outer periphery of the interior of the chamber body. In such embodiments, the outer portion 605a may extend along one or more sidewalls 306 from the panel 615 to the bottom wall 309. However, in embodiments, as discussed above, a pump-suction liner 610 may be disposed above the liners 605. Therefore, in embodiments utilizing the pump-suction liner 610, the outer portion 605a may extend from the lower surface of the pump-suction liner 610 to the bottom wall 309 of the chamber body 305 (e.g., the pump-suction liner 610 is disposed between the outer portion 605a and the panel 615).

[0061] However, the inner portion 605b may be laterally spaced from the outer portion 605a in the direction toward the processing region 504, thereby defining a liner volume 609 between the outer portion 605a and the inner portion 605b. The inner portion 605b may extend into the processing region 504, as defined above, and may define the inlet and outlet diameters of the substrate support 310. Therefore, in embodiments, the inner portion 605b may be spaced from the outer portion 605a by any amount such that the inlet and outlet diameters, as discussed above, are maintained between the inner portion 605a and the substrate support 310. In embodiments, the inner portion 605b may extend from a position generally parallel to the upper surface of the substrate support 310 (e.g., when the substrate support 310 is in the processing position) to the bottom wall 309 of the chamber body 305. However, in embodiments, as discussed above, the pump liner 610 may be positioned above the liner 605. Therefore, in embodiments utilizing the pump-suction liner 610, the pump-suction liner can be situated on the inner portion 605b such that the inner portion 605b extends from the lower surface of the pump-suction liner 610 to the bottom wall 309 of the chamber body 305. In such embodiments, the pump-suction liner 610 is situated on the inner portion 605a and is thus positioned between the inner portion 605b and the panel 615. However, in these embodiments, it should be understood that the inner portion 605b and the outer portion 605a can be integrally formed from a single piece having a hollow interior.

[0062] In embodiments, the internal portion 605b may include one or more lateral extensions that are generally orthogonal to the vertical extensions discussed above. For example, while the upper end of the internal portion 605b may have a position generally limited by the substrate support 310, the bottom portion adjacent to the bottom wall 309 may extend to incorporate one or more additional features and / or chamber components to be cleaned. For example, in embodiments, the internal portion 605b may extend laterally toward the purge volume 506 such that the discharge outlet 612 is contained within and connected to the liner volume. Furthermore, as shown, in embodiments, the discharge outlet 612 may be positioned within the area of ​​the chamber covered by the liner volume, thereby allowing for enhanced cleaning of the discharge device and valves therein.

[0063] Furthermore, as shown in the figure, the top 613 of the liner 605 may be open or have openings to allow fluid connection to the processing area 504. In embodiments, the top 613 of the liner 605 may be directly open to the processing area 504, or may be fluidly connected via one or more additional components (e.g., through a pump-suction liner 610).

[0064] Regardless of orientation, the liner 605 defines a liner volume 609 that extends at least partially around the interior of the chamber body 305 and fluidly connects the clean gas source 514 to the exhaust outlet 612. As discussed above, the exhaust outlet 612 may be the system's sole exhaust outlet or may be an exhaust outlet coupled to the pumped liner chamber discussed above. The exhaust outlet 612 may be fluidly connected to an exhaust manifold via one or more valves 614. Surprisingly, at least in part due to the location of one or more inlet holes 608, individually or in combination with the short path length between the clean gas source 514 and the liner volume 609 and the exhaust outlet 612, the processes and systems according to this technology exhibit improved cleaning of one or more chamber components, such as the exhaust outlet 612, the exhaust valve 614, the liner 605 / 610, and the process area of ​​the surface 616 facing the panel 615.

[0065] That is, in the embodiment, one or more inlet holes 608 and corresponding cleaning gas chambers 607 can be disposed within the chamber body between the upper surface 311 of the substrate support 310 and the bottom wall 309 of the chamber body 305. In the embodiment, the cleaning gas chambers 607 and one or more inlet holes 608 can pass through the side wall 306 of the chamber body 305 at a height ranging from about 10% to about 90%, from about 15% to about 85%, from about 20% to about 80%, from about 25% to about 75%, from about 30% to about 70%, from about 35% to about 65%, from about 40% to about 60%, from about 45% to about 55%, or any range or value therebetween. In this manner, as illustrated by the free radical flow path 611, free radicals formed by the cleaning gas source 514 can flow through the cleaning gas chamber 607 toward one or more inlet holes 608, across the sidewall 306 of the chamber body 305, and into the liner volume 609. Therefore, the free radical flow path 611 can interact around the circumference of the liner volume, the process area of ​​the surface 606 facing the panel 615, the pumped liner 610, and the discharge outlet 612 and valve 614, without needing to traverse the panel 615 (as in conventional cleaning systems, which traverse the upstream of the panel 615).

[0066] As is known in the art, free radicals (including clean gas free radicals formed from fluorine- and oxygen-containing precursors) readily recombine with other gas particles or contaminants. Therefore, the longer the flow path, the more difficult the traversal, resulting in fewer free radicals available for cleaning. As discussed above, conventional cleaning systems allow free radicals to flow upstream of panel 615. Therefore, any free radical must pass through panel apertures. Since the apertures are often extremely small, the free radicals interact with the large surface area, resulting in a high percentage of free radicals recombinating with other gas free radicals or compounds found on the panel. This phenomenon results in a low percentage of free radicals remaining in the clean gas after the fluid has passed through the processing zone 504 or elsewhere in the chamber body 305. Furthermore, existing RPS units (such as unit 515 discussed above) cannot simultaneously generate both process precursors and clean gases when the necessary process conditions are met.

[0067] Surprisingly, at least in part, due to the elimination of the need to traverse panel 615 and its holes, according to this technology, a large percentage of free radicals form all or part of the cleaning gas entering the liner volume 609. Furthermore, as discussed below, this technology has found that by mounting or otherwise placing the cleaning gas source 514 below chamber 300, the free radical path length can be ideally short, while maintaining the existing system footprint. Therefore, surprisingly, the process and system discussed herein can significantly improve the cleaning of residues, even with a reduced cleaning gas volume.

[0068] Furthermore, due to the unique location of the inlet orifice 608 and the cleaning gas source 514, and through a separate cleaning gas source other than the process RPS (such as RPS 515), the cleaning gas generated by the cleaning gas source 514 can flow during both the processing operation and the conventional cleaning operation. In this way, the cleaning gas generated by the cleaning gas source 514 can interact with the processing residue 604 during processing, thereby binding with the residue before it deposits on the surfaces of one or more chamber components. Therefore, this technology not only provides enhanced cleaning but also prevents the formation of deposits that would otherwise require the thorough cleaning operation described above, which necessitates significant system downtime due to chamber cooling and process curing. Additionally, at least in part due to the unique location of the one or more inlet orifices and the cleaning RPS, the cleaning gas generated by the cleaning RPS can flow during conventional cleaning operations, thereby reducing the amount of cleaning gas that needs to be introduced upstream of the panel 615. This type of process significantly reduces the volume of cleaning gas required for cleaning and also significantly shortens the cleaning time. Therefore, this technology provides enhanced cleaning operations with reduced cleaning gas volume and shorter cleaning time.

[0069] However, in embodiments, it may be desirable to isolate the exhaust outlet 612 from the purge volume 506 to reduce the cleaning area and the necessary volume of cleaning gas from the cleaning gas source 514. When the substrate support 310 is in the processing position, the purge volume 506 may be substantially defined by the substrate support 310, sidewalls 306, and bottom wall 309. The purge volume 506 may be fluidly connected to the purge gas source via inlet 308.

[0070] Although Figure 5 The diagram illustrates a single chamber, and Figure 6 The illustration shows two chambers, but it should be understood that the clean gas source 514 can be used simultaneously in more than two chambers, such as four or more chambers, and one or more of the chambers discussed above. Figure 6 As illustrated, in this type of embodiment, the cleaning gas source 514 can be fluidly connected to two or more chambers 300, thereby forming a free radical flow path 611 to each chamber 300. While other structures may be used, in this embodiment, the free radical inlet 601 can be attached to a separator 602. The separator 602 can be fixedly or releasably attached to the free radical inlet 601, such as using one or more clamps, and can contain several flow paths, the number of which equals the number of connected chambers. However, the separator 602 can guide free radicals along the flow path 611 through one or more connectors 603 into the cleaning gas chamber 607, and through one or more inlet holes 608. Therefore, in this embodiment, the technique can be used to clean multiple chambers simultaneously.

[0071] Surprisingly, this technology has discovered that, by utilizing a custom mounting bracket, a clean gas source 514 (e.g., an additional RPS or clean gas source from the plasma and clean gas source discussed above) can be used as described above without increasing the occupied area of ​​the current chamber 300 or inhibiting the function of the chamber 300. See Figure 7 The cleaning gas source 514 can be attached to the chamber 300 via the mounting assembly 700. That is, by utilizing the mounting assembly 700 discussed herein, the cleaning gas source 514 can be vertically positioned below the chamber 300 without contacting or damaging critical components located on the bottom surface of the chamber. By utilizing such mounting assemblies, an additional cleaning gas source can be incorporated into the chamber 300 without inhibiting function or increasing the system's footprint, while simultaneously providing sufficient support for the cleaning gas source and any changes exhibited by the cleaning gas source during processing.

[0072] In an embodiment, the mounting assembly 700 may include a support frame 702 with two or more opposing side supports 704a, 704b, a bottom support 706, and an opposing upper support 708. A clean gas source 514 may be situated on the bottom support 706 and may be laterally supported by the opposing side supports 704a, 704b. Additionally, the upper support 708 may provide one or more mounting surfaces for the support arm 711. In an embodiment, it may be desirable to include one or more brackets 710 that can connect to the opposing sides 708a, 704b and / or the opposing bottom and upper supports 706, 708, and the brackets 710 may provide additional support (if needed). Although the support frame 702 is illustrated as having one or more open sides, it should be understood that in an embodiment, some or all of the clean gas sources 514 may be contained within a solid housing.

[0073] However, the support frame 702 can be supported by a mounting rod 712, which is fixedly or releasably attached to the mounting plate 714. In an embodiment, the mounting rod can be fixedly or releasably attached to a support arm 711, which can extend from the upper support 708 to the mounting rod 712 and thus securely abut against the mounting plate 714 to support the support frame 702. In an embodiment, the mounting plate 714 can be removably or permanently attached to the side 716 of the chamber 300, such as a lateral side disposed between opposing upper surfaces 713 and lower surfaces 715 of the chamber 300. In an embodiment, the mounting plate 714 can be positioned generally along the central axis of the chamber 300, such as... Figures 8A to 8C A clearer illustration is provided. The mounting plate allows the forces of the clean gas source 514 to be dispersed, thereby allowing the mounting assembly 700 to provide a stable base for the clean gas source 514.

[0074] In embodiments, the support frame 702 may also include one or more tension members 718. In embodiments, the tension member 718 may be a spring or similar member that allows some expansion of the frame while maintaining proper support. In the illustrated embodiment, the tension member 718 may include one or more springs that are initially tensioned by an attachment 720 (e.g., a screw). By utilizing such combinations, appropriate initial tension can be applied to the tension member, thereby allowing a robust balance between support and flexibility during processing conditions. That is, it is common for remote plasma sources (e.g., inlet 601 and / or separator 602) to expand due to thermal expansion during plasma generation. Therefore, the design of this technology allows for the transfer of loads to the mounting plate 714 while also taking into account thermal expansion during processing. In such embodiments, the bottom support 706 may include a first plate 706a and a second plate 706b. The first plate 706a may be attached to the opposite sides 704a, 704b of the support frame 702, as discussed above, while the second plate 706b may be supported by the first plate 706a and one or more tension members 718.

[0075] In one embodiment, the mounting rod 712 can be releasably attached to the mounting plate 714 via one or more translational attachments 722a, 722b extending through the attachment housings 721a, 721b. (See also...) Figures 8A to 8C By utilizing one or more translational attachments 722, the cleaning gas source 514 can be translated to the left or right as illustrated by arrow 724. For example, by removing the first translational attachment 722a ( Figure 7 The entire cleaning gas source 514 can be translated around the second translatable attachment 722b, as illustrated by arrow 724b. Similarly, by removing the second translatable attachment 722b, the entire cleaning gas source 514 can be translated around the first translatable attachment 722a, as illustrated by arrow 724a. That is, the remaining translatable attachments (e.g., attachments that have not been removed) can serve as an axis of rotation around which the cleaning RPS can rotate outward from the side surface 716 of the cleaning gas source 514. In this way, the cleaning RPS can move from a central position to an auxiliary side position, thereby allowing access to one or more chambers adjacent to the removed translatable attachments. In embodiments, it is known in the art that the translatable attachment 722 can be a screw, rod, rivet, or the like.

[0076] For example, Figure 8B and Figure 8C The diagram illustrates the self Figure 8BThe illustrated structure represents an embodiment where the second translatable attachment 722b is removed. After removing the translatable attachment 722b, the cleaning gas source 514 can be translated from a first central position to an auxiliary position. As illustrated, in this embodiment, the auxiliary position can be located between the central axis C of the chamber 300 and the outer edges 726a, 726b of the chamber 300. In this embodiment, the chamber 300 may include one or more auxiliary mounting plates 728a, 728b. When in use, the one or more auxiliary mounting plates 728a, 728b may include auxiliary mounting pins 730a, 730b. The shape and size of the mounting pins may correspond to the housing 721a, 721b vacated by the removed translatable attachment (e.g., through a screw hole or the like) and hold the cleaning gas source 514 in the auxiliary position. In this embodiment, the cleaning gas source 514 can be held in a second position during cleaning or maintenance operations.

[0077] However, after completing access to the desired chamber, the auxiliary mounting pin 730a can be released. By releasing the auxiliary mounting pin, the cleaning gas source 514 can rotate around the first translational attachment 722a toward a central position and then attach to the second translational attachment 722b. Furthermore, refer to... Figure 8A It should be understood that the clean gas source 514 can be translated toward the first side 726a or the second side 726b based on the removed translational attachment.

[0078] Figure 9 The illustration depicts the operation of an exemplary method 900 for substrate processing according to some embodiments of the present technology. The method can be performed in various processing chambers, including the processing systems and chambers 100, 200, and 300 described above, which may include the cleaning RPS and pump-suction liners discussed above. Method 900 may include a large number of optional operations, which may or may not be specifically associated with some embodiments of the method according to the present technology.

[0079] Method 900 may include optional operations prior to initiating method 900, or may include additional operations. For example, method 900 may include operations performed in a different order than illustrated. However, in an embodiment, method 900 may include operation 905 of flowing a cleaning gas or plasma precursor into a processing chamber. In an embodiment, the processing chamber may be any chamber discussed with respect to the processing system above. The method may, as appropriate, include evacuating the cleaning gas or plasma precursor from the chamber before flowing the second cleaning gas at operation 910, or may include flowing the second gas simultaneously with operation 905.

[0080] However, in an embodiment, operation 910 can be performed by an auxiliary cleaning gas source. As discussed above, the auxiliary cleaning gas source can be fluidly coupled to an inlet orifice in the chamber liner. The inlet orifice can advantageously be located below the panel or processing area of ​​the chamber. Thus, cleaning gas from the auxiliary cleaning gas source can flow directly from the cleaning gas source through the inlet orifice and around the liner. Furthermore, in operation 915, cleaning gas from the auxiliary cleaning gas source can be discharged without requiring the cleaning gas to cross one or more panel orifices. By providing an auxiliary cleaning gas source and inlet orifice according to the present technology, enhanced cleaning of components downstream of the panel can be exhibited. Furthermore, in an embodiment, the system and process can allow the formation of small amounts of deposits, alone or in combination, requiring a small volume of cleaning gas, because the process can be run simultaneously with cleaning or deposition operations, at least in part due to the location of the auxiliary cleaning gas source and inlet orifice. In an embodiment, the present technology is well-suited for removing one or more carbonaceous compounds, or in combination with one or more carbonaceous compounds, such as one or more carbonaceous compounds formed or utilized during CVD processes (illustrated by way of example only).

[0081] In the foregoing description, numerous details have been set forth for illustrative purposes to provide an understanding of various embodiments of the present technology. However, it will be apparent to those skilled in the art that certain embodiments may be practiced without some of these details or with additional details.

[0082] After disclosing several embodiments, those skilled in the art will recognize that various modifications, alternative constructions, and equivalents can be used without departing from the spirit of the embodiments. Furthermore, various well-known processes and components have not been described to avoid unnecessarily obscuring the technology. Therefore, the above description should not be construed as limiting the scope of the technology.

[0083] Where a range of values ​​is provided, it should be understood that each intermediate value, precisely to the minimum unit between the upper and lower limits of the range, is also specifically disclosed (unless the context explicitly states otherwise). This encompasses any narrower range between any stated or unstated intermediate values ​​within the stated range, and any other stated or intermediate values ​​within the stated range. The upper and lower limits of these smaller ranges may be independently included or excluded from the range, and including, excluding, or including both limits in a smaller range is also covered by this technique, depending on any specific excluded limit within the stated range. Where a stated range includes one or both limits, it also includes ranges that exclude either or both of the included limits.

[0084] Unless the context clearly specifies otherwise, as used herein and in the appended claims, the singular forms “a(a)”, “an”, and “the” include multiple referents. Thus, for example, reference to “heater” includes multiple such heaters, and reference to “the hole” includes reference to one or more holes and their equivalents known to a skilled person, and so on.

[0085] Furthermore, the terms “comprise,” “comprising,” “contain,” “containing,” “include,” and “including” are intended, when used in this specification and the following claims, to specify the presence of the stated features, integers, components, or operations, but do not exclude the presence or addition of one or more other features, integers, components, operations, actions, or groups.

Claims

1. A substrate processing system, comprising: A chamber body that defines a processing area; A liner, the liner being positioned within the chamber body, the liner defining a liner volume; A panel, the panel being positioned on top of the liner; A substrate support member, wherein the substrate support member is disposed within the cavity body, and A clean gas source, wherein the clean gas source is coupled to the liner volume through a clean gas chamber and one or more inlet holes; At least one of the one or more inlet holes is disposed in the processing area between the panel and the bottom wall of the chamber body.

2. The substrate processing system according to claim 1, wherein: The clean gas source is vertically positioned below the main body of the chamber.

3. The substrate processing system according to claim 1, wherein: The one or more inlet holes extend through the sidewall of the chamber body.

4. The substrate processing system according to claim 3, wherein: The lining includes an outer lining portion and an inner lining portion, wherein the volume of the lining is defined between the outer lining portion and the inner lining portion.

5. The substrate processing system according to claim 4, wherein: The outer lining portion extends around the inner periphery of the chamber body.

6. The substrate processing system according to claim 5, wherein: The inner lining portion is laterally spaced from the outer lining portion in the direction toward the substrate support.

7. The substrate processing system according to claim 5, wherein: The one or more inlet holes extend through the outer liner portion.

8. The substrate processing system according to claim 3, wherein: The one or more inlet holes extend through the sidewall of the chamber body at a height of about 10% to about 90% of the total height of the sidewall.

9. The substrate processing system of claim 4, further comprising a discharge outlet, wherein the discharge outlet is disposed within the liner volume.

10. A substrate processing system, comprising: A chamber having a chamber body defining a processing area; A liner, the liner being positioned by the chamber body, the liner defining the liner volume; A panel, the panel being positioned on top of the liner; A substrate support member is disposed within the chamber body. A cleaning gas source is disposed below the chamber body and is volume-coupled to the liner through one or more inlet holes in the chamber body, wherein at least one of the one or more inlet holes is disposed in the processing area; and A support frame, wherein the clean gas source is located on the support frame, wherein the support frame is pivotally mounted to a side of the chamber body.

11. The substrate processing system according to claim 10, wherein: The support frame includes a bottom surface having a first plate and a second plate, wherein one or more tension members support the second plate on the first plate.

12. The substrate processing system according to claim 11, wherein: At least one of the one or more tension members includes a spring attached to the first plate.

13. The substrate processing system of claim 10, wherein the substrate processing system comprises two or more chambers, wherein the cleaning gas source is fluidly coupled to each of the two or more chambers.

14. The substrate processing system according to claim 10, wherein: The cleaning gas source includes a processing location, wherein the cleaning gas source is positioned along the central axis of the chamber.

15. The substrate processing system according to claim 14, wherein: One or more auxiliary mounting plates are attached to the lateral side of the chamber body between the central axis of the chamber and the lateral edge of the chamber.

16. The substrate processing system according to claim 15, further comprising: The one or more auxiliary assembly plates are configured to receive the clean gas source in the second position.

17. A processing method comprising the following steps: A cleaning gas or plasma precursor is directed through a spray head into the processing area of ​​a semiconductor processing chamber, the semiconductor processing chamber containing... The liner, positioned by the processing area, defines the liner volume, and A clean gas source, wherein the clean gas source is directly coupled to the liner volume through a clean gas chamber and one or more inlet holes; At least one of the one or more inlet holes is disposed in the processing area; Allow the second cleaning gas to flow through one or more inlet holes; and The second cleaning gas is discharged through the liner volume.

18. The processing method according to claim 17, wherein: The cleaning gas is allowed to flow into the processing area, wherein the second cleaning gas flows into the semiconductor processing chamber simultaneously with the cleaning gas.

19. The processing method according to claim 17, wherein: The plasma precursor is allowed to flow into the processing region, wherein the second cleaning gas flows simultaneously with the plasma precursor into the semiconductor processing chamber.

20. The processing method according to claim 19, wherein the plasma precursor comprises a carbon-containing precursor.

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