Electrostatic chuck apparatus

Abstract

An electrostatic chuck device includes a base having a circular plan view, formed of a dielectric material, and supporting a plate-shaped sample, and an electrode for electrostatic adsorption provided inside the base. The base has a plurality of convex portions provided to protrude upward from an upper surface of the base and support the plate-shaped sample with upper ends, and a de-electrification portion provided to protrude from the upper surface of the base to the same height as the convex portions. The upper surface of the base continuously extends from an inner periphery of the base to an outer edge of the base in a plan view. The de-electrification portion has a conductive member embedded in the base and penetrating the base in a thickness direction, and a band-shaped conductive film provided to cover upper ends of the conductive member. A plan view area of the conductive film is 20% or less of a plan view area of the base. A plan view area of the electrode for electrostatic adsorption is 80% or more of the plan view area of the base. The conductive film has an outer peripheral film provided along the outer edge of the base in the plan view. The outer peripheral film is provided at a position more inward than the outer edge.

Description

Technical Field

[0001] This invention relates to an electrostatic chuck device.

[0002] This application claims priority based on Japanese Patent Application No. 2024-051444, filed on March 27, 2024, the contents of which are incorporated herein by reference. Background Technology

[0003] In semiconductor manufacturing processes, the wafer surface is processed by plasma treatment of a plate-shaped sample (wafer) fixed to a sample stage, for example, to form wiring structures. After processing, the wafer is inspected in an inspection device for scratches, foreign matter, and whether the formed wiring structure meets design requirements.

[0004] In this wafer inspection, an electrostatic chuck device is used that can easily fix and hold the wafer. The electrostatic chuck device has: a substrate, one main surface of which is a mounting surface for placing the wafer; and an electrostatic adsorption electrode that generates an electrostatic force (Coulomb force) between itself and the wafer placed on the mounting surface (for example, see Patent Document 1). The substrate uses a ceramic plate as a dielectric.

[0005] Existing technical documents Patent documents Patent Document 1: International Publication No. 2019 / 245791 Summary of the Invention The technical problem to be solved by the invention If conventional electrostatic chuck devices are used to hold wafers for extended periods, the substrate, which serves as the dielectric, may become charged. Possible causes of this charging include the electron beam used during inspection, secondary electrons generated by the potential difference between the holding electrode and the wafer, and triboelectric charging resulting from repeated wafer loading and unloading.

[0006] The charged substrate counteracts the Coulomb force generated by the electrostatic adsorption electrodes, thereby reducing the wafer's adhesion. Therefore, in an electrostatic chuck device with a charged substrate, wafer fixation may become inadequate.

[0007] Furthermore, when the voltage applied to the electrostatic adsorption electrodes is stopped and the wafer is to be transferred, the charged substrate may continue to adsorb the wafer due to the residual charge on the substrate, hindering the removal of the wafer from the mounting surface. If the wafer is de-energized before being removed after using the electrostatic chuck, the time required for inspection will be extended due to the de-energization operation, resulting in reduced work efficiency.

[0008] Therefore, if the substrate is charged, proper operation will be hindered both when the wafer is being held in place (during inspection, etc.) and when the wafer is not held in place (after inspection, etc.), thus there is a need for improvement.

[0009] The present invention was made in view of this situation, and its object is to provide an electrostatic chuck device in which the charge on the substrate constituting the mounting surface is suppressed.

[0010] means for solving technical problems To address the aforementioned issues, one aspect of the present invention includes the following apparatus.

[0011] [1] An electrostatic chuck device comprising: a substrate, which is circular in plan view, formed of a dielectric material and supporting a plate-shaped sample; and an electrostatic adsorption electrode disposed inside the substrate, the substrate having: a plurality of protrusions that protrude upward from the upper surface of the substrate and support the plate-shaped sample at their upper ends; and a current-removing portion that protrudes from the upper surface of the substrate to the same height as the protrusions, the upper surface of the substrate being continuous from the inner periphery of the substrate to the outer edge of the substrate in plan view. The current-removing part includes: a conductive component embedded in the substrate and penetrating the substrate along the thickness direction; and a strip-shaped conductive film covering the upper end of the conductive component, wherein the top view area of ​​the conductive film is less than 20% of the top view area of ​​the substrate, and the top view area of ​​the electrostatic adsorption electrode is more than 80% of the top view area of ​​the substrate. The conductive film has an outer peripheral film disposed along the outer edge of the substrate when viewed from above, and the outer peripheral film is disposed at a position further inward than the outer edge.

[0012] [2] According to the electrostatic chuck device of [1], the conductive film has: a plurality of first films having the same center and arranged in a circular or arc shape; and a second film connecting the plurality of first films, wherein the first films are at least part of the outer peripheral film.

[0013] [3] According to the electrostatic chuck device of [2], the radially adjacent first films are spaced apart by a distance of 40 mm or less.

[0014] [4] The electrostatic chuck device according to [2] or [3], wherein the conductive component is disposed in a region surrounded by the innermost of the plurality of first films.

[0015] [5] The electrostatic chuck device according to any one of [2] to [4], wherein the conductive component is disposed at the intersection of the first membrane and the second membrane.

[0016] [6] The electrostatic chuck device according to any one of [1] to [5], wherein the conductive member protrudes from the upper surface of the substrate to the same height as the protrusion.

[0017] [7] According to the electrostatic chuck device of [6], the static elimination part has a static elimination part protrusion, the static elimination part protrusion protrudes from the upper surface of the substrate to the same height as the protrusion, the conductive member is disposed inside the outer edge of the static elimination part protrusion when viewed from above, the upper end of the static elimination part protrusion and the upper end of the conductive member are set at the same height, and the conductive film covers the upper end of the static elimination part protrusion and the upper end of the conductive member.

[0018] [8] An electrostatic chuck device according to any one of [1] to [7], wherein the substrate has: a first substrate formed of a dielectric material; and a second substrate that, together with the first substrate, holds the electrostatic adsorption electrode, the first substrate having the plurality of protrusions on its upper surface, and the conductive member having: a first conductive member embedded in the first substrate and electrically connected to the conductive film; and a second conductive member embedded in the second substrate and electrically connected to the first conductive member.

[0019] [9] An electrostatic chuck device according to any one of [1] to [8], wherein the conductive member has a through hole extending along the thickness direction, and the static elimination part has a pin inserted into the through hole and capable of protruding upward from the upper end of the static elimination part.

[0020]

[10] According to the electrostatic chuck device of [9], the pin is electrically connected to the conductive component and is arranged in such a way that it can pierce the insulating layer on the back side of the plate-shaped sample.

[0021]

[11] The electrostatic chuck device according to any one of [1] to

[10] , wherein the substrate is provided with a groove that is recessed relative to the upper surface of the substrate and extends in the surface direction.

[0022] Invention Effects According to the present invention, an electrostatic chuck device is provided in which the charge on the substrate constituting the mounting surface is suppressed. Attached Figure Description

[0023] Figure 1 This is a schematic perspective view showing a preferred example of the electrostatic chuck device 1 of this embodiment.

[0024] Figure 2 This is a partial enlarged view of the electrostatic chuck device 1.

[0025] Figure 3 This is a schematic cross-sectional view of the electrostatic chuck device 1.

[0026] Figure 4 This is a schematic partial top view of the electrostatic chuck device 1, showing the detailed structure of the conductive film 32.

[0027] Figure 5 yes Figure 4 A rough enlarged view of the position indicated by the symbol α.

[0028] Figure 6 This is a schematic diagram illustrating the electrostatic chuck device involved in the modified example. Detailed Implementation

[0029] The following is for reference. Figures 1 to 6 A preferred embodiment of the electrostatic chuck device according to this embodiment will be described. Furthermore, in all the following drawings, the dimensions, ratios, etc., of each component are appropriately varied for ease of observation. Additionally, the following detailed description is provided to better understand the spirit of the invention and does not limit the invention unless otherwise specified. For example, unless otherwise specifically limited, conditions such as shape, size, quantity, material, amount, type, position, and ratio can be changed, added, or omitted as needed.

[0030] In the following description, an orthogonal xyz coordinate system is established, and the positional relationships of each component are explained with reference to this orthogonal xyz coordinate system. Here, a specified direction in the horizontal plane is defined as the x-axis direction, a direction orthogonal to the x-axis direction in the horizontal plane is defined as the y-axis direction, and directions orthogonal to both the x-axis and y-axis directions (i.e., vertical directions) are defined as the z-axis direction.

[0031] Figure 1 This is a schematic perspective view showing a preferred example of the electrostatic chuck device 1 of this embodiment. Figure 2 This is a partial enlarged view of the electrostatic chuck device 1. Figure 3 This is a schematic cross-sectional view of the electrostatic chuck device 1, along... Figure 2 A sectional view along line III-III in the diagram.

[0032] like Figures 1 to 3 As shown, the electrostatic chuck device 1 of this embodiment includes a substrate 10 for supporting a plate-shaped sample (wafer W) and an electrostatic adsorption electrode 20 disposed inside the substrate 10. The electrostatic chuck device 1 is preferably used to hold the wafer W in place when inspecting the processed wafer W for scratches on the surface, foreign matter on the surface, and whether the formed wiring structure meets the design requirements.

[0033] In the electrostatic chuck device 1, two grooves 19 are formed on the base 10. The grooves 19 are recessed downwards (in the -z direction) relative to the upper surface 10a of the base 10 and along the surface direction (in the -z direction). Figure 1 (The middle part extends in the x direction). The support part X of the transport fork used to transport the wafer W is inserted into the slot 19, thereby enabling the wafer W to be placed on the substrate 10 before inspection and to be removed after inspection.

[0034] In conventional electrostatic chuck devices, the substrate 10 sometimes becomes charged, causing defects. Specifically, in conventional electrostatic chuck devices used in the applications described above, the substrate 10 sometimes becomes charged during repeated inspections of the wafer W, causing defects during wafer W fixing and removal. In contrast, in the electrostatic chuck device 1 of this embodiment, the above-mentioned defects are eliminated by having a charge removal section 30.

[0035] The following sections will explain each component in turn.

[0036] The matrix The substrate 10 is formed of a dielectric material and supports the wafer W. For example... Figure 2 , Figure 3 As shown, the substrate 10 has a plurality of protrusions 15, which are disposed protruding upward (in the +z direction) from the upper surface 10a and support the wafer W at their upper ends. The imaginary surface connecting the upper ends of the plurality of protrusions 15 corresponds to the mounting surface supporting the wafer W.

[0037] As described above, regarding the base 10, the surface on which the protrusion 15 is formed, or in other words, the bottom surface when viewed from the top of the protrusion 15, is referred to as the "upper surface 10a" and used as a reference surface. The protrusion 15 is described as protruding upward from the upper surface 10a. The groove 19 is also described as having a structure that is recessed downward from the upper surface 10a.

[0038] The protrusion 15 has a cylindrical or frustum-shaped form, and the cross-section along the upper surface 10a is circular. The shape of the protrusion 15 is not limited to a cylindrical or frustum-shaped form. Furthermore, the cross-sectional shape of the protrusion 15 is not limited to a circle; it can be elliptical, triangular, rectangular, or other polygonal shapes.

[0039] Regardless of the cross-sectional shape of the protrusion 15, when considering the smallest circumscribed circle of the protrusion 15 in plan view, the diameter of the circumscribed surface is preferably 0.5 mm or less. It can also be 0.4 mm or less, 0.3 mm or less, 0.2 mm or less, or 0.1 mm or less. Furthermore, the total plan view area of ​​the plurality of protrusions 15 is preferably 5% or less of the plan view area of ​​the first substrate 11. It can also be 4% or less, 3% or less, 2% or less, or 1% or less. Because the protrusion 15 has such a size, the contact area between the protrusion 15 and the wafer W is small, and triboelectric charging between the protrusion 15 and the wafer W is suppressed.

[0040] The height of the protrusion 15 (from the upper surface 10a to the upper end 15a of the protrusion 15) is preferably 15 μm or less. It can also be 13 μm or less, 10 μm or less, 8 μm or less, 6 μm or less, etc. The lower limit of the height of the protrusion 15 can be arbitrarily selected, for example, it can be 0.5 μm or more, 1 μm or more, 2 μm or more, etc.

[0041] (1st base, 2nd base) The substrate 10 has a first substrate 11 and a second substrate 12. The first substrate 11 and the second substrate 12 are stacked along the thickness direction.

[0042] The first substrate 11 is circular in shape when viewed from above. The upper surface of the first substrate 11 is the upper surface 10a of the substrate 10. The first substrate 11 is formed of a ceramic material as a dielectric material.

[0043] The relative permittivity of the first substrate 11 is 10 or more, more preferably 11 or more, and even more preferably 12 or more.

[0044] As the ceramic material constituting the first substrate 11, alumina (Al2O3) sintered body, aluminum nitride (AlN) sintered body, alumina (Al2O3)-silicon carbide (SiC) composite sintered body are preferably used, for example.

[0045] The second substrate 12 is circular when viewed from above. The second substrate 12 is formed of ceramic material.

[0046] The ceramic material constituting the second substrate 12 is preferably, for example, an Al2O3 sintered body, an AlN sintered body, or an Al2O3-SiC composite sintered body. The second substrate 12 may be made of the same material as the first substrate 11, or it may be made of a different material than the first substrate 11.

[0047] Furthermore, the second substrate 12 can be composed of a single sintered body, or it can be formed by stacking and bonding multiple sintered bodies along the thickness direction. In this case, the multiple sintered bodies can be composed of different ceramic materials.

[0048] (Electrode for electrostatic adsorption) The electrostatic adsorption electrode 20 contacts the lower surface of the first substrate 11 and is disposed between the first substrate 11 and the second substrate 12. The top view area of ​​the electrostatic adsorption electrode 20 is 80% or more of the top view area of ​​the substrate 10. Depending on the requirements, it may also be 83% or more, 85% or more, 90% or more, 93% or more, 95% or more, etc. The top view shape of the electrostatic adsorption electrode 20 can be arbitrarily selected. Examples of electrostatic adsorption electrodes 20 include those made of silver, molybdenum, tungsten, or conductive ceramics containing these metals, or conductive adhesives containing these metals, but it is not limited to these examples.

[0049] The electrostatic adsorption electrode 20 is preferably a composite of an insulating material and a conductive material. The insulating material included in the electrostatic adsorption electrode 20 is not particularly limited, but is preferably at least one selected from the group consisting of Al₂O₃, AlN, silicon nitride (Si₃N₄), yttrium(III) oxide (Y₂O₃), yttrium aluminum garnet (YAG), and SmAlO₃. The conductive material is also not particularly limited and can be arbitrarily selected; for example, it is preferably at least one selected from the group consisting of conductive organic materials containing silver (Ag) (such as silver paste), molybdenum carbide (Mo₂C), molybdenum (Mo), tungsten carbide (WC), tungsten (W), tantalum carbide (TaC), tantalum (Ta), silicon carbide (SiC), carbon black, carbon nanotubes, and carbon nanofibers.

[0050] A power supply terminal (not shown) is connected to the electrostatic adsorption electrode 20. The power supply terminal applies a voltage to the electrostatic adsorption electrode 20. By applying the voltage, the electrostatic adsorption electrode 20 generates an electrostatic adsorption force to hold the wafer W supported by the protrusion 15.

[0051] (Adhesive layer) An adhesive layer 25 is disposed between the first substrate 11 and the second substrate 12 to bond the first substrate 11 and the second substrate 12.

[0052] The material used for the adhesive layer 25 can be selected arbitrarily as needed, for example, silicone resins, acrylic resins, epoxy resins, and polyimide resins can be listed.

[0053] The adhesive layer 25 can be formed by applying a paste adhesive to one side of the second substrate 12 and curing it, or by placing a sheet adhesive between the first substrate 11 and the second substrate 12 and curing it.

[0054] (Except for the Electric Power Department) The charge-removing section 30 has the function of removing the charge accumulated on the substrate 10 due to repeated use (such as inspection of the wafer W). The charge-removing section can be provided protruding from the upper surface 10a of the substrate 10. The charge-removing section 30 can be provided protruding from the upper surface 10a of the substrate 10 to the same height as the protrusion 15.

[0055] The current-eliminating part 30 has a conductive component 31 and a conductive film 32. The conductive film 32 of the current-eliminating part 30 can cover the protrusions 15. The number and position of the protrusions 15 covered by the conductive film 32 can be arbitrarily selected.

[0056] (Conductive components) The conductive component 31 is formed of a conductive material and is embedded in the substrate 10. The conductive component 31 is connected to the GND potential. Examples of conductive materials include conductive organic materials containing silver (Ag) (such as silver paste), molybdenum carbide (Mo2C), molybdenum (Mo), tungsten carbide (WC), tungsten (W), tantalum carbide (TaC), tantalum (Ta), silicon carbide (SiC), carbon black, carbon nanotubes, and carbon nanofibers, but are not limited to these.

[0057] The conductive component 31 extends through the substrate 10 along the thickness direction (z-direction) and protrudes upward from the upper surface 10a of the substrate 10 to the same height as the protrusion 15. The wafer W is easily charged by charges generated by the electron beam, secondary electrons generated by the potential difference between the wafer W and the electrostatic adsorption electrode 20, and friction between the wafer W and the substrate 10. Since the conductive component 31 protrudes as described above, it is easily electrically connected to the wafer W via the conductive film 32, and the wafer W can be easily decharged.

[0058] like Figure 3 As shown, the conductive component 31 includes: a first conductive component 311 embedded in a first substrate 11; and a second conductive component 312 embedded in a second substrate 12. The first conductive component 311 and the second conductive component 312 are electrically connected to form the conductive component 31.

[0059] The first conductive component 311 is a cylindrical component with a through hole 311x extending along the z-direction, and the second conductive component 312 is a cylindrical component with a through hole 312x extending along the z-direction. The central axes of the through holes 311x and 312x are aligned and connected, forming a through hole 31x extending through the conductive component 31 along the thickness direction of the substrate 10. When the first conductive component 311 and the second conductive component 312 have cylindrical shapes, their respective outer diameters can be arbitrarily selected. For example, the outer diameter of the second conductive component 312 can be 1.0 to 10.0 times, 1.3 to 7.0 times, 1.5 to 5.0 times, 2.0 to 4.5 times, or 2.5 to 4.0 times the outer diameter of the first conductive component 311.

[0060] The current-eliminating part 30 has a current-eliminating protrusion 33 that surrounds the conductive member 31 when viewed from above. For example... Figure 2 As shown, the static-eliminating protrusion 33 is arranged in a circular shape concentric with the conductive member 31 when viewed from above. The static-eliminating protrusion 33 can be part of the first substrate 11. Furthermore, the static-eliminating protrusion 33 can have the same outer diameter as the second conductive member 312.

[0061] like Figure 3As shown, the static-eliminating protrusion 33 protrudes from the upper surface 10a of the substrate 10 to the same height as the protrusion 15 and the conductive member 31. That is, the thickness of the static-eliminating protrusion 33 can be the same as the thickness of the protrusion 15.

[0062] Furthermore, the conductive component 31 is preferably positioned at the center of the substrate 10 when viewed from above (in Figure 1 (represented by symbol 31).

[0063] (Conductive film) The conductive film 32 is disposed in contact with and covers the upper end 31a of the conductive member 31. The conductive film 32 is also in contact with and covers the upper end 33a of the current-eliminating protrusion 33, which is disposed at the same height as the conductive member 31.

[0064] The conductive film 32 is a film formed using a conductive material in a prescribed pattern. The material used for the conductive film 32 can be arbitrarily chosen; for example, non-magnetic metals such as TiN, Ti, and aluminum, and their compounds, can be used. The conductive film 32 can be obtained by using these materials and forming them on the substrate 10 using known patterning techniques. The top-view shape of the conductive film 32 can be arbitrarily chosen as long as a portion of the conductive film 32 covers the upper end of the conductive component 31. The conductive film 32 may only contact the first substrate 11 containing the protrusions and the conductive component 31.

[0065] The conductive film 32 is electrically connected to the conductive component 31. For example, in... Figure 3 In the example shown, a portion of the conductive film 32 is in direct contact with the upper end of the conductive component 31, and the remaining portion of the conductive film 32 extends further. Through this connection, the current-eliminating part 30 is connected to the GND potential (ground potential), enabling current elimination of components in contact with the current-eliminating part 30 (conductive component 31, conductive film 32).

[0066] The conductive film 32 is preferably provided extending from the upper end 31a of the conductive member 31 to the upper surface 10a of the substrate 10. In this case, by making the thickness of the conductive film 32 less than the height of the protrusion 15 (making it thinner), the conductive film 32 provided on the upper surface 10a will not be located above the protrusion 15, thereby allowing the protrusion 15 to effectively support the wafer W. The thickness of the conductive film 32 can be arbitrarily selected, for example, it can be 0.0001mm to 0.013mm, 0.0003mm to 0.010mm, 0.0005mm to 0.005mm, 0.001mm to 0.003mm, etc. The width of the conductive film 32 can be arbitrarily selected, for example, it can be 0.5mm to 25mm, 1mm to 15mm, 2mm to 10mm, 3mm to 5mm, etc., but is not limited to these.

[0067] Furthermore, the conductive film 32 preferably extends from the upper end 31a of the conductive member 31 to the upper end 15a of a portion of the protrusions 15. In this configuration, the substrate 10 and the wafer W can be de-energized at the protrusions 15 where the conductive film 32 is provided at the upper end 15a. The proportion of protrusions 15 on which the conductive film 32 is provided can be arbitrarily selected; for example, it can be 5-8%, 8-15%, or 15-20% relative to the total number of protrusions 15. Moreover, even if there are protrusions 15 on which the conductive film 32 is provided and protrusions 15 on which the conductive film 32 is not provided, there is no problem in supporting the wafer W because the thickness of the conductive film is sufficiently small compared to the height of the protrusion 15.

[0068] As such a structure, Figure 1 , Figure 2 As shown, the conductive film 32 is preferably arranged in a strip shape when viewed from above.

[0069] The conductive film 32 has a shape composed of a plurality of first films 321 and a plurality of second films 322. The first films 321 are arranged in a circular or arc shape with the same center. The second films 322 are connected to the plurality of first films 321.

[0070] When viewed from above, the top-view area of ​​the conductive film 32 is 20% or less of the top-view area of ​​the substrate 10. Depending on the requirements, it can also be 18% or less, 15% or less, 13% or less, 10% or less, 5% or less, or 3% or less. By forming the conductive film 32 with the aforementioned area, and forming the electrostatic adsorption electrode 20 as described above to be 80% or more of the top-view area of ​​the substrate 10, even after de-electrostatic treatment of the substrate 10 by the conductive film 32, the wafer W can be well adsorbed. That is, while ensuring good adsorption of the wafer W, phenomena caused by undesirable charging of the substrate can be prevented. In other words, wafer fixation can be improved, and work efficiency can be increased. Furthermore, the ratio of the overlap between the electrostatic adsorption electrode 20 and the conductive film 32 when viewed from above can be arbitrarily selected. For example, when viewed from above, 0% to 10% of the conductive film 32 can overlap with the electrostatic adsorption electrode 20, preferably 0.3% to 7%, more preferably 0.5% to 5%, and even more preferably 0.7% to 2%. Depending on the requirements, the conductive film 32 and the electrostatic adsorption electrode 20 may not overlap.

[0071] Figure 4 This is a partial top view of the electrostatic chuck device 1, showing the detailed structure of the conductive film 32. Figure 5 This is an enlarged view of the location indicated by the symbol α in the diagram. For example... Figure 4 , Figure 5 As shown, the conductive film 32 has a first film 321A disposed on the outermost periphery when viewed from above, and first films 321B, 321C, and 321D disposed concentrically with the substrate 10 and the first film 321A.

[0072] A second film 322A, extending in the x-direction, is disposed at the center of the substrate 10 when viewed from above. The second film 322A connects to the first films 321A to 321D at the center of the substrate 10. The second film 322A is a generally straight film passing through the center of the substrate when viewed from above, and preferably has an annular portion at the center. The length of the second film 322A is approximately equal to the diameter of the generally circular first film 321A. Figure 2 As shown, the second membrane 322A overlaps with the conductive member 31, the static elimination protrusion 33, and a plurality of protrusions 15 arranged along the x-direction when viewed from above. The second membrane 322A has a first portion 322x that is provided with equal width, and a second portion 322y that overlaps with the static elimination protrusion 33 and is formed to bulge out larger than the static elimination protrusion 33.

[0073] Furthermore, second membranes 322B and 322C, parallel to the second membrane 322A, are provided along the groove portion 19, and an arc-shaped second membrane 322D connecting the second membranes 322B and 322C and the first membrane 321B is provided.

[0074] (Conductive film at the periphery of the substrate) The first membrane 321A, the second membrane 322B, 322C, and 322D are interconnected, forming a peripheral membrane disposed along the outer edge 10b of the substrate 10 when viewed from above. The first membrane 321A is a part of the peripheral membrane.

[0075] The peripheral membranes (membrane 1 321A, membrane 2 322B, 322C, 322D) are positioned further inward than the outer edge 10b of the substrate 10 when viewed from above. The number of peripheral membranes can be arbitrarily selected.

[0076] The upper surface 10a of the substrate 10 extends from the inner circumference of the substrate 10 to the outer edge 10b of the substrate 10 when viewed from above. The upper surface 10a may be connected to the outer edge 10b of the substrate 10 throughout the entire circumference, or a protrusion 15 may be provided on a portion of the outer edge 10b.

[0077] like Figure 5 As shown, the spacing W1 between adjacent protrusions 15 is at least 20 times the diameter of the protrusion 15 in top view (the diameter of the circumscribed circle of the protrusion 15 in top view). It can also be at least 25 times, 30 times, or 40 times. Furthermore, the distance W2 from the outermost protrusion 15A closest to the outer edge 10b of the first substrate 11 to the outer edge 10b of the first substrate 11 is shorter than the spacing W1. For example, the distance W2 can be less than 80%, less than 50%, or less than 30% of the spacing W1.

[0078] The radially adjacent spacing Wa, Wb, and Wc of the first films 321A to 321D is preferably 40 mm or less. It can also be 35 mm or less, 30 mm or less, 20 mm or less, or 10 mm or less. Furthermore, the radius Wd of the circular first film 321D is preferably 40 mm or less. It can also be 35 mm or less, 30 mm or less, 20 mm or less, or 10 mm or less. According to the inventors' research, it has been confirmed that, when viewed from above, static electricity can be effectively removed by the conductive film 32 within a range of 40 mm or less. Therefore, as long as the spacing between the first films is 40 mm or less, and the radius of the innermost first film 321D is 40 mm or less, static electricity can be effectively removed by the formed conductive film.

[0079] The conductive component 31 is preferably disposed in region AR, which is surrounded by the innermost first film 321D among a plurality of first films 321. In the figure, the conductive component represented by the symbol 31A corresponds to this. Due to this configuration of the conductive component 31, the substrate 10 can be decoupled without deviation via the conductive film 32. Region AR is preferably aligned with the center of the substrate 10 when viewed from above.

[0080] The conductive component 31 can be disposed at the position where the conductive films intersect each other, for example, at the position where the first film 321 and the second film 322 intersect (e.g., Figure 4 (The location is indicated by the symbol A). In the conductive component 31 located at this position, charges from both the first membrane 321 and the second membrane 322 converge, thereby enabling efficient charge removal. The number of conductive components 31 can be arbitrarily selected.

[0081] (pin) In addition, the charge-eliminating part 30 preferably has a pin 50, which is inserted into the through hole 31x of the conductive member 31 and can protrude upward from the upper end of the charge-eliminating part 30. The pin 50 can be a lifting pin that lifts the wafer W from the back side, can be electrically connected to the conductive member 31, and / or can be a charge-eliminating pin that is provided in a manner that can pierce the insulating layer (not shown) on the back side of the wafer W. Since the pin 50 is a charge-eliminating pin, it can effectively remove the charge accumulated on the wafer W. In addition, the degree of piercing of the pin that is provided in a piercing manner can be arbitrarily selected as long as it can eliminate charge.

[0082] According to the electrostatic chuck device 1 having the above structure, the charge collected through the conductive film can be effectively removed via the conductive component. This allows for the suppression of the substrate constituting the mounting surface from becoming charged.

[0083] The preferred embodiments of the present invention have been described above with reference to the accompanying drawings, but the present invention is not limited to these examples. The various shapes and combinations of the constituent components shown in the above examples are just one example, and various modifications can be made based on design requirements, etc., without departing from the spirit of the present invention.

[0084] For example, in this embodiment, the conductive film 32 is provided to cover a plurality of protrusions 15, but it is not limited thereto. It may also extend from the static elimination protrusions 33 to the upper surface 10a of the substrate 10, or it may only be provided on the upper surface of the static elimination protrusions 33. For example, the conductive film 32 may not cover the protrusions 15. The conductive film 32 may extend from the conductive member 31 and the static elimination protrusions 33 to the upper surface 10a of the substrate 10, or it may only be provided on the upper surface of the conductive member 31 and the static elimination protrusions 33. For example, the conductive film 32 may extend from the first conductive member 311 to the upper surface 10a of the substrate 10, or it may only be provided on the upper surface of the first conductive member 311.

[0085] Furthermore, in this embodiment, the electric stripping section 30 has an electric stripping section protrusion 33 that protrudes to the same height as the conductive member 31, but the electric stripping section protrusion 33 may not be formed.

[0086] Furthermore, the conductive member 31 can be made to be at the same height as the upper surface 10a, and electrically connected to the conductive film 32 on the upper surface 10a (between the protrusions 15). In this case, static electricity can be eliminated through the plurality of protrusions 15 on which the conductive film 32 is provided.

[0087] Furthermore, in this embodiment, the conductive component 31 is shown as a cylindrical component, but it is not limited to this. Other structures can also be used as long as the conductive component 31 is electrically connected to the conductive film 32 and can remove electricity from the first substrate 11 and the wafer W through the conductive film 32.

[0088] For example, such as Figure 6 As shown in the conductive component 35, the conductive component can also be a rod-shaped (column-shaped) component connected to the conductive film 32. Figure 6 The upper end of the conductive component 35 shown is set to the same height as the upper end 33a of the current-eliminating protrusion 33, but it is also possible to make the upper end the same height as the upper surface 10a and electrically connect it to the conductive film 32 on the upper surface 10a (between the protrusions 15).

[0089] Even with this type of electric stripping section 30, the effects of the present invention can still be achieved.

[0090] Label Explanation 1-Electrostatic Chuck Device 10-matrix 10a-Top Surface 10b-Outer edge 11-1st substrate 12-Second substrate 15-convex part 15a, 31a, 33a - Upper end 15A - Outermost convex part 19-Groove 20-Electrode for electrostatic adsorption 25-Adhesive layer 30-Electrification Section 31-Conductive components 31A - Conductive component surrounded by the innermost first membrane 31x, 311x, 312x - Through holes 32-Conductive film 33-Protruding part of static elimination part 35-Conductive components 50-sales 311-First Conductive Component 312-Second Conductive Component 321-First Membrane 321A, 321B, 321C, 321D - The first membrane arranged concentrically. 322, 322A, 322B, 322C, 322D - Second membrane 322x - Part 1 322y - Part 2 A-Cross position AR-area Support section of X-carrying fork W-wafer Wa, Wb, Wc, Wd - Spacing distance W1 - Spacing Distance W2 - Distance α-position.

Claims

1. An electrostatic chuck device, comprising: The substrate, which is circular in top view, is formed of dielectric material and supports the plate-shaped sample; and Electrostatic adsorption electrodes are disposed inside the substrate. The matrix has: Multiple protrusions are provided, projecting upwards from the upper surface of the substrate, and supporting the plate-shaped specimen at their upper ends; and The current-eliminating part protrudes from the upper surface of the substrate to the same height as the protrusion. The upper surface of the substrate, when viewed from above, extends continuously from the inner periphery of the substrate to the outer edge of the substrate. The current-removing unit has: A conductive component, embedded in the substrate and penetrating the substrate along its thickness direction; and A strip-shaped conductive film is disposed to cover the upper end of the conductive component. The top view area of ​​the conductive film is less than 20% of the top view area of ​​the substrate. The top-view area of ​​the electrode used for electrostatic adsorption is more than 80% of the top-view area of ​​the substrate. The conductive film has an outer peripheral film, which is disposed along the outer edge of the substrate when viewed from above. The peripheral membrane is located further inward than the outer edge.

2. The electrostatic chuck device according to claim 1, wherein, The conductive film has: Multiple first membranes, with the same center, are arranged in a circular or arc shape; and The second membrane connects the plurality of first membranes. The first membrane is at least a part of the peripheral membrane.

3. The electrostatic chuck device according to claim 2, wherein, The radially adjacent first membranes are spaced less than 40 mm apart.

4. The electrostatic chuck device according to claim 2 or 3, wherein, The conductive component is disposed in the region surrounded by the innermost of the plurality of first membranes.

5. The electrostatic chuck device according to claim 2 or 3, wherein, The conductive component is disposed at the intersection of the first membrane and the second membrane.

6. The electrostatic chuck device according to any one of claims 1 to 3, wherein, The conductive component protrudes from the upper surface of the substrate to the same height as the protrusion.

7. The electrostatic chuck device according to claim 6, wherein, The current-eliminating part has a current-eliminating protrusion that protrudes from the upper surface of the substrate to the same height as the protrusion. The conductive component is located on the inner side of the outer edge of the protrusion of the current-dissipating part when viewed from above. The upper end of the protrusion of the current-eliminating part is set at the same height as the upper end of the conductive part. The conductive film covers the upper end of the current-dissipating protrusion and the upper end of the conductive component.

8. The electrostatic chuck device according to any one of claims 1 to 3, wherein, The matrix has: A first substrate, which is formed of a dielectric material; and The second substrate, together with the first substrate, clamps the electrostatic adsorption electrode. The first substrate has the plurality of protrusions on its upper surface. The conductive component has: A first conductive component, which is embedded in the first substrate and electrically connected to the conductive film; and The second conductive component is embedded in the second substrate and is electrically connected to the first conductive component.

9. The electrostatic chuck device according to any one of claims 1 to 3, wherein, The conductive component has a through hole extending along the thickness direction. The current-eliminating part has a pin that is inserted into the through hole and can protrude upward from the upper end of the current-eliminating part.

10. The electrostatic chuck device according to claim 9, wherein, The pin is electrically connected to the conductive component and is arranged in such a way that it can pierce the insulating layer on the back side of the plate-shaped sample.

11. The electrostatic chuck device according to any one of claims 1 to 3, wherein, The substrate is provided with a groove that is recessed relative to the upper surface of the substrate and extends along the surface direction.

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