Quartz furnace tube and method of processing the same

Abstract

This invention relates to the field of photovoltaic cells, and more particularly to a quartz furnace tube and its processing method. The quartz furnace tube includes a tube body, on the inner wall of which a stress transition layer is disposed. The stress transition layer comprises an inner layer and an exogenous silicon layer sequentially stacked on the inner wall. The thermal expansion coefficient of the inner layer is less than that of the exogenous silicon layer, and the thermal expansion coefficient of the inner layer is greater than or equal to that of the tube body. Implementing this invention can reduce the cracking and peeling of the film layer on the inner wall of the quartz furnace tube, improve the manufacturing yield of solar cells, and extend the service life of the printing screen.

Description

Technical Field

[0001] This invention relates to the field of photovoltaic cells, and more particularly to a quartz furnace tube and its processing method. Background Technology

[0002] In existing photovoltaic cell manufacturing processes, LPCVD equipment is used to form various film layers, including silicon oxide, polycrystalline silicon, and amorphous silicon. LPCVD equipment suffers from slag shedding from the inner wall of the furnace tube. The main mechanism of this slag shedding is as follows: the adsorption layer formed on the inner wall of the quartz tube accumulates to a certain extent and then ruptures due to stress caused by temperature fluctuations. Driven by the airflow within the quartz tube, the slag agglomerates or falls onto the silicon wafer in particles or flakes, ultimately forming black spots or localized blockage failures on the cell, reducing the manufacturing yield. Furthermore, these spots also shorten the lifespan of the printing screen. Summary of the Invention

[0003] The technical problem to be solved by the present invention is to provide a quartz furnace tube that can improve the manufacturing yield of battery cells and extend the service life of printing screens.

[0004] Another technical problem that this invention aims to solve is to provide a method for processing quartz furnace tubes.

[0005] To address the aforementioned problems, this invention discloses a quartz furnace tube, comprising a tube body, wherein a stress transition layer is provided on the inner wall of the tube body, the stress transition layer comprising an inner layer and an exogenous silicon layer sequentially stacked on the inner wall; the thermal expansion coefficient of the inner layer is less than the thermal expansion coefficient of the exogenous silicon layer, and greater than or equal to the thermal expansion coefficient of the tube body.

[0006] As an improvement to the above technical solution, the inner layer is a silicon oxynitride layer and / or a silicon nitride layer; The exogenous silicon layer is a polycrystalline silicon layer and / or an amorphous silicon layer.

[0007] As an improvement to the above technical solution, the thickness of the exogenous silicon layer is ≥100nm.

[0008] As an improvement to the above technical solution, the inner layer includes a silicon oxynitride layer and a silicon nitride layer; The silicon oxynitride layer is disposed on the surface of the inner wall of the tube, and the silicon nitride layer is disposed between the silicon oxynitride layer and the exogenous silicon layer.

[0009] As an improvement to the above technical solution, the thickness of the silicon oxynitride layer is 5nm~5μm; The thickness of the silicon nitride layer is 5 nm to 10 μm; The thickness of the exogenous silicon layer is 100nm~500nm.

[0010] As an improvement to the above technical solution, the inner wall of the tube is subjected to sandblasting or polishing treatment.

[0011] As an improvement to the above technical solution, the inner wall of the tube is sandblasted, and a microstructure is formed on the inner wall of the tube, and the inner layer covers the microstructure.

[0012] Accordingly, the present invention also discloses a method for processing quartz furnace tubes, comprising: A stress transition layer is formed on the inner wall of the tube; The stress transition layer comprises an inner layer and an external silicon layer sequentially stacked on the inner wall; the thermal expansion coefficient of the inner layer is less than that of the external silicon layer and greater than or equal to that of the tube body.

[0013] As an improvement to the above technical solution, the inner layer includes a silicon oxynitride layer and a silicon nitride layer; The silicon oxynitride layer is disposed on the surface of the inner wall of the tube, and the silicon nitride layer is disposed between the silicon oxynitride layer and the exogenous silicon layer.

[0014] As an improvement to the above technical solution, the processing method includes: Heat the tube to over 600℃ and evacuate it until the internal pressure is ≤10mtorr; A nitrogen source, an oxygen source, and a silicon source are introduced into the tube body to form a silicon oxynitride layer under conditions of 600℃~750℃ and 80mtorr~1000mtorr. A nitrogen source and a silicon source are introduced into the tube body to form a silicon nitride layer under conditions of 600℃~750℃ and 80mtorr~1000mtorr. A silicon source is introduced into the tube, and an external silicon layer is formed under conditions of 550℃~750℃ and 80mtorr~1000mtorr. The tube is evacuated to a low pressure of ≤10 mtorr, and then nitrogen gas with a flow rate of 2000 sccm~15000 sccm is introduced into the tube and purged for more than 100 seconds.

[0015] As an improvement to the above technical solution, the processing method includes: Heat the tube to over 600℃ and evacuate it until the internal pressure is ≤10mtorr; Oxygen at a flow rate of 1000 sccm to 10000 sccm is introduced into the tube body, and the tube is oxidized and burned for more than 10 minutes; A nitrogen source, an oxygen source, and a silicon source are introduced into the tube body to form a silicon oxynitride layer under conditions of 600℃~750℃ and 80mtorr~1000mtorr. A nitrogen source and a silicon source are introduced into the tube body to form a silicon nitride layer under conditions of 600℃~750℃ and 80mtorr~1000mtorr. A silicon source is introduced into the tube, and an external silicon layer is formed under conditions of 550℃~750℃ and 80mtorr~1000mtorr. The tube is evacuated to a low pressure of ≤10 mtorr, and then nitrogen gas with a flow rate of 2000 sccm~15000 sccm is introduced into the tube and purged for more than 100 seconds.

[0016] As an improvement to the above technical solution, the processing method includes: Heat the tube to over 600℃ and evacuate it until the internal pressure is ≤10mtorr; Nitrogen gas with a flow rate of 1000 sccm to 18000 sccm is introduced into the tube and purged for 30 to 900 seconds. A nitrogen source, an oxygen source, and a silicon source are introduced into the tube body to form a silicon oxynitride layer under conditions of 600℃~750℃ and 80mtorr~1000mtorr. A nitrogen source and a silicon source are introduced into the tube body to form a silicon nitride layer under conditions of 600℃~750℃ and 80mtorr~1000mtorr. A silicon source is introduced into the tube, and an external silicon layer is formed under conditions of 550℃~750℃ and 80mtorr~1000mtorr. The tube is evacuated to a low pressure of ≤10 mtorr, and then nitrogen gas with a flow rate of 2000 sccm~15000 sccm is introduced into the tube and purged for more than 100 seconds.

[0017] As an improvement to the above technical solution, the processing method includes: Heat the tube to over 600℃ and evacuate it until the internal pressure is ≤10mtorr; Oxygen at a flow rate of 1000 sccm to 10000 sccm is introduced into the tube body, and the tube is oxidized and burned for more than 10 minutes; The tube body is evacuated to a low pressure of ≤10 mtorr, and then nitrogen gas with a flow rate of 1000 sccm~18000 sccm is introduced and purged for 30s~900s. A nitrogen source, an oxygen source, and a silicon source are introduced into the tube body to form a silicon oxynitride layer under conditions of 600℃~750℃ and 80mtorr~1000mtorr. A nitrogen source and a silicon source are introduced into the tube body to form a silicon nitride layer under conditions of 600℃~750℃ and 80mtorr~1000mtorr. A silicon source is introduced into the tube, and an external silicon layer is formed under conditions of 550℃~750℃ and 80mtorr~1000mtorr. The tube is evacuated to a low pressure of ≤10 mtorr, and then nitrogen gas with a flow rate of 2000 sccm~15000 sccm is introduced into the tube and purged for more than 100 seconds.

[0018] As an improvement to the above technical solution, the nitrogen source is ammonia; and / or The oxygen source is nitrous oxide; and / or The silicon source is silane, dichlorosilane, or trichlorosilane.

[0019] Accordingly, the present invention also discloses a method for processing quartz furnace tubes, comprising: An initial stress transition layer is formed on the inner wall of the tube; After the tube body deposits the film to be deposited 100 to 500 times, a stress-compensating transition layer is formed on the inner wall of the tube body; The initial stress transition layer and the compensating stress transition layer each include an inner layer and an external silicon layer stacked sequentially; the thermal expansion coefficient of the inner layer is less than that of the external silicon layer and greater than or equal to that of the tube body. The film to be deposited includes at least one of silicon oxide, silicon nitride, silicon oxynitride, polycrystalline silicon, and amorphous silicon.

[0020] As an improvement to the above technical solution, the initial stress transition layer includes a first silicon oxynitride layer, a first silicon nitride layer and a first exogenous silicon layer stacked sequentially. The thickness of the first silicon oxynitride layer is 5nm~5μm, the thickness of the first silicon nitride layer is 5nm~10μm, and the thickness of the first exogenous silicon layer is 100nm~500nm.

[0021] As an improvement to the above technical solution, the stress-compensating transition layer includes a second silicon oxynitride layer, a second silicon nitride layer, and a second exogenous silicon layer stacked sequentially. The thickness of the second silicon oxynitride layer is 5nm~2μm, the thickness of the second silicon nitride layer is 5nm~5μm, and the thickness of the second exogenous silicon layer is 100nm~500nm.

[0022] As an improvement to the above technical solution, the initial stress transition layer is formed at a temperature of 550℃~750℃, and the compensating stress transition layer is formed at a temperature of 500℃~650℃.

[0023] Implementing this invention has the following beneficial effects: In one embodiment of the present invention, the quartz furnace tube includes a tube body, on the inner wall of which a stress transition layer is disposed. The stress transition layer includes an inner layer and an exogenous silicon layer sequentially stacked on the inner wall. The thermal expansion coefficient of the inner layer is smaller than that of the exogenous silicon layer, and the thermal expansion coefficient of the inner layer is greater than or equal to that of the tube body. Based on this, a stress transition layer with a thermal expansion coefficient that increases sequentially from the inside to the outside can be formed, thereby effectively buffering thermal stress during the heating and cooling process of the quartz furnace tube, reducing the cracking and falling off of the stress transition layer, improving the yield of solar cells, and extending the service life of the printing screen. Attached Figure Description

[0024] Figure 1 This is a schematic cross-sectional view of a quartz furnace tube in one embodiment of the present invention; Figure 2 This is a schematic cross-sectional view of the quartz furnace tube in another embodiment of the present invention; Figure 3 This is a flowchart of a method for processing quartz furnace tubes according to an embodiment of the present invention; Figure 4 This is a flowchart of a method for processing quartz furnace tubes according to another embodiment of the present invention; Figure 5 This is a flowchart of a method for processing quartz furnace tubes according to another embodiment of the present invention; Figure 6 This is a flowchart of a method for processing quartz furnace tubes according to another embodiment of the present invention; Figure 7 This is a flowchart of a method for processing quartz furnace tubes according to another embodiment of the present invention. Detailed Implementation

[0025] To make the objectives, technical solutions, and advantages of this application clearer, the following detailed description is provided in conjunction with the accompanying drawings and embodiments. Examples of the embodiments are shown in the accompanying drawings, wherein the same or similar reference numerals denote the same or similar elements or elements having the same or similar functions throughout. The embodiments described below with reference to the accompanying drawings are exemplary and are only used to explain this application, and should not be construed as limiting this application. Furthermore, it should be understood that the specific embodiments described herein are merely for explaining this application and are not intended to limit this application.

[0026] In the description of this application, it should be understood that the terms "length", "width", "upper", "lower", "left", "right", "horizontal", "top", "bottom", etc., indicate the orientation or positional relationship based on the orientation or positional relationship shown in the accompanying drawings, and are only for the convenience of describing this application and simplifying the description, and do not indicate or imply that the device or element referred to must have a specific orientation, or be constructed and operated in a specific orientation, and therefore should not be construed as a limitation of this application.

[0027] Furthermore, the terms "first" and "second" are used for descriptive purposes only and should not be construed as indicating or implying relative importance or implicitly specifying the number of technical features indicated. Thus, a feature defined as "first" or "second" may explicitly or implicitly include one or more of the stated features. In the description of this application, "a plurality of" means two or more, unless otherwise explicitly specified.

[0028] In the description of this application, it should be noted that, unless otherwise expressly specified and limited, the terms "installation," "connection," and "linking" should be interpreted broadly. For example, they can refer to a fixed connection, a detachable connection, or an integral connection; they can refer to a mechanical connection, an electrical connection, or a connection that allows communication between them; they can refer to a direct connection or an indirect connection through an intermediate medium; they can refer to the internal communication between two components or the interaction between two components. Those skilled in the art can understand the specific meaning of the above terms in this application according to the specific circumstances.

[0029] In this application, unless otherwise expressly specified and limited, "above" or "below" the second feature can include direct contact between the first and second features, or contact between the first and second features through another feature between them. Furthermore, "above," "over," and "on top" of the second feature includes the first feature being directly above or diagonally above the second feature, or simply indicates that the first feature is at a higher horizontal level than the second feature. "Below," "below," and "under" the second feature includes the first feature being directly below or diagonally below the second feature, or simply indicates that the first feature is at a lower horizontal level than the second feature.

[0030] The following disclosure provides numerous different embodiments or examples for implementing various structures of this application. To simplify the disclosure, specific examples of components and arrangements are described below. These are merely examples and are not intended to limit the scope of this application. Furthermore, reference numerals and / or letters may be repeated in different examples; such repetition is for simplification and clarity and does not in itself indicate a relationship between the various embodiments and / or arrangements discussed. In addition, various specific examples of processes and materials are provided in this application, but those skilled in the art will recognize the application of other processes and / or the use of other materials.

[0031] Please see Figure 1 As a first aspect of the present invention, the present invention provides a quartz furnace tube, comprising a tube body 100, wherein a stress transition layer 200 is disposed on the inner wall 110 of the tube body 100. The stress transition layer 200 comprises an inner layer 210 and an exogenous silicon layer 220 sequentially stacked on the inner wall 110. The coefficient of thermal expansion of the inner layer 210 is less than that of the exogenous silicon layer 220, and the coefficient of thermal expansion of the inner layer 210 is greater than or equal to that of the tube body 100. Based on this, a stress transition layer 200 with a coefficient of thermal expansion increasing sequentially from the inside to the outside can be formed, thereby effectively buffering thermal stress during the heating and cooling process of the quartz furnace tube, reducing the cracking and falling off of the stress transition layer 200 and the adsorption layer attached thereto, improving the manufacturing yield of photovoltaic cells, and extending the service life of the printing screen.

[0032] Specifically, the inner layer 210 may be made of one or more of silicon nitride, silicon oxynitride, tantalum nitride, or chromium nitride, but is not limited thereto. The coefficients of thermal expansion of these materials are all between those of the quartz furnace tube and the external silicon layer 220, thus forming a gradient thermal buffer zone. Preferably, in some embodiments, the inner layer 210 is a silicon nitride layer and / or a silicon oxynitride layer. These two layers not only effectively alleviate thermal stress, but also have strong adhesion to the inner wall 110 of the quartz furnace tube, are not easily detached, and can function stably for a long time.

[0033] Specifically, the exogenous silicon layer 220 is a product obtained by deposition from an exogenous silicon-containing gas source. More specifically, the exogenous silicon layer 220 can be made of one or more of amorphous silicon, polycrystalline silicon, and microcrystalline silicon, but is not limited thereto. Preferably, in some embodiments, the exogenous silicon layer 220 is a polycrystalline silicon layer and / or an amorphous silicon layer, which can play a good thermal buffering role, and the preparation process is simple and highly compatible with the film layers in the photovoltaic cell production process. Specifically, in the photovoltaic cell preparation process, chemical thin films such as polycrystalline silicon layers, silicon oxide layers, silicon nitride layers, and silicon oxynitride layers need to be formed through thin film deposition processes, all of which require the introduction of silicon-containing precursor gases. By using an amorphous silicon layer / polycrystalline silicon layer as the exogenous silicon layer 220, the stability of the adsorption layer obtained by subsequent gas deposition can be effectively improved, thereby increasing the yield of photovoltaic cells.

[0034] Specifically, the thickness of the inner layer 210 is ≥10nm to ensure complete coverage of the inner wall 110 of the tube body 100 and provide sufficient thermal buffering. More specifically, the thickness of the inner layer 210 is 10nm~20μm, exemplary values ​​are 50nm, 120nm, 200nm, 250nm, 300nm, 500nm, 800nm, 1.2μm, 2.5μm, 4μm, 5.5μm, 7μm, 9μm, 11μm, 13μm, 15μm or 18μm, but not limited thereto. Preferably, the thickness of the inner layer 210 is 20nm~15μm, more preferably 50nm~5μm.

[0035] Specifically, the thickness of the exogenous silicon layer 220 is ≥100nm to ensure the formation of a continuous stress transition layer 200, preventing cracking or detachment during thermal cycling. More specifically, the thickness of the exogenous silicon layer 220 is 100nm~1μm, exemplary values ​​are 150nm, 220nm, 300nm, 350nm, 400nm, 500nm, 650nm, 700nm, 800nm, or 940nm, but not limited thereto. Preferably, the thickness of the exogenous silicon layer 220 is 100nm~800nm, more preferably 100nm~500nm.

[0036] Preferably, in some embodiments, the thickness ratio of the inner layer 210 to the external silicon layer 220 is 5:1 to 20:1, which can better buffer thermal stress.

[0037] Preferably, please refer to Figure 2 In some embodiments, the inner layer 210 includes a silicon oxynitride layer 211 and a silicon nitride layer 212. The silicon oxynitride layer 211 is disposed on the surface of the inner wall 110 of the tube body 100, and the silicon nitride layer 212 is disposed between the silicon oxynitride layer 211 and the exogenous silicon layer 220, forming a multi-layer gradient structure of quartz furnace tube / silicon oxynitride / silicon nitride / exogenous silicon. This further reduces the concentration of interfacial thermal stress, inhibits the generation and propagation of cracks, reduces the cracking and falling off of the stress transition layer 200 and the subsequently formed adsorption layer, improves the yield of the solar cell, and extends the service life of the printing screen.

[0038] Specifically, the thickness of the silicon oxynitride layer 211 is 5 nm to 5 μm, and exemplary thicknesses include 10 nm, 100 nm, 300 nm, 800 nm, 1.2 μm, 1.5 μm, 2.3 μm, 3.2 μm, 3.4 μm, or 3.8 μm, but are not limited thereto. Preferably, the thickness of the silicon oxynitride layer 211 is 30 nm to 3 μm.

[0039] Specifically, the oxygen content and nitrogen content in the silicon oxynitride layer 211 may be the same or different. Preferably, in some embodiments, the oxygen content in the silicon oxynitride layer 211 is greater than the nitrogen content. This silicon oxynitride layer 211 has a coefficient of thermal expansion that is closer to that of a quartz furnace tube, which can better alleviate thermal stress. More specifically, the oxygen content in the silicon oxynitride layer 211 is 45 at.% to 55 at.%, exemplarily 48 at.%, 50 at.%, 52 at.%, or 54 at.%, but is not limited thereto. The nitrogen content in the silicon oxynitride layer 211 is 5 at.% to 20 at.%, exemplarily 8 at.%, 10 at.%, 12 at.%, 15 at.%, or 18 at.%, but is not limited thereto.

[0040] Specifically, the thickness of the silicon nitride layer 212 is 5 nm to 10 μm, and exemplary thicknesses include 10 nm, 200 nm, 600 nm, 900 nm, 1.2 μm, 2.5 μm, 3.2 μm, 4.6 μm, 5.8 μm, 7 μm, 8.1 μm, or 9.4 μm, but are not limited thereto. Preferably, the thickness of the silicon nitride layer 212 is 20 nm to 5 μm.

[0041] Preferably, in some embodiments, the thickness ratio of the silicon oxynitride layer 211 to the thickness of the silicon nitride layer 212 is 1:(1.5~3). More preferably, it is 1:(2~3).

[0042] Specifically, the inner wall 110 of the quartz furnace tube body 100 is sandblasted or polished. Preferably, in some embodiments, the inner wall 110 of the tube body 100 is sandblasted to form a microstructure, increase roughness, and thus allow the inner layer 210 to cover the microstructure, improving the bonding force between the tube body 100 and the inner layer 210 and extending the service life of the stress transition layer 200.

[0043] Accordingly, as a second aspect of the present invention, a method for processing a quartz furnace tube is also disclosed, which includes the step of forming a stress transition layer on the inner wall of the tube body. The stress transition layer comprises an inner layer and an exogenous silicon layer sequentially stacked on the inner wall; the coefficient of thermal expansion of the inner layer is less than that of the exogenous silicon layer and greater than or equal to that of the tube body. Based on this, a stress transition layer with a coefficient of thermal expansion increasing sequentially from the inside to the outside can be formed, thereby effectively buffering thermal stress during the heating and cooling processes of the quartz furnace tube, reducing the cracking and detachment of the stress transition layer and the adsorption layer attached thereto, improving the manufacturing yield of photovoltaic cells, and extending the service life of the printing screen.

[0044] Specifically, the inner layer may be made of one or more of silicon nitride, silicon oxynitride, tantalum nitride, or chromium nitride, and may be formed by LPCVD, PECVD, or PVD, but is not limited thereto. Preferably, in some embodiments, the inner layer is a silicon nitride layer and / or a silicon oxynitride layer, which is formed by LPCVD or PECVD, and is compatible with the film formation process in photovoltaic cell manufacturing, thereby improving production efficiency.

[0045] Specifically, the exogenous silicon layer is a product obtained by deposition from an exogenous silicon-containing gas source. More specifically, the exogenous silicon layer can be made of one or more of amorphous silicon, polycrystalline silicon, and microcrystalline silicon, and can be formed by LPCVD, PECVD, and MOCVD, but is not limited thereto. Preferably, in some embodiments, the exogenous silicon layer is a polycrystalline silicon layer and / or an amorphous silicon layer, which is formed by LPCVD or PECVD, and is compatible with the film formation process in the photovoltaic cell manufacturing process, thereby improving production efficiency.

[0046] Specifically, the thickness of the inner layer is ≥10nm to ensure complete coverage of the inner wall of the tube and provide sufficient thermal buffer. More specifically, the thickness of the inner layer is 10nm~20μm, preferably 20nm~15μm, and more preferably 50nm~5μm.

[0047] Specifically, the thickness of the exogenous silicon layer is ≥100nm to ensure the formation of a continuous stress transition layer so as not to crack or fall off during thermal cycling. More specifically, the thickness of the exogenous silicon layer is 100nm~1μm, preferably 100nm~800nm, and more preferably 100nm~500nm.

[0048] Preferably, in some embodiments, the inner layer includes a silicon oxynitride layer and a silicon nitride layer. The silicon oxynitride layer is disposed on the surface of the inner wall of the tube, and the silicon nitride layer is disposed between the silicon oxynitride layer and the exogenous silicon layer, forming a multi-layer gradient structure of quartz furnace tube / silicon oxynitride / silicon nitride / exogenous silicon. This further reduces the concentration of interfacial thermal stress, inhibits crack generation and propagation, reduces the cracking and detachment of the stress transition layer and the subsequently formed adsorption layer, improves the yield of the solar cell, and extends the service life of the printing screen. Specifically, the thickness of the silicon oxynitride layer is 5nm~5μm, preferably 30nm~3μm. Specifically, the oxygen content in the silicon oxynitride layer is greater than the nitrogen content, more specifically, the oxygen content in the silicon oxynitride layer is 45at.%~55at.%, and the nitrogen content is 5at.%~20at.%. Specifically, the thickness of the silicon nitride layer is 5nm~10μm, preferably 20nm~5μm.

[0049] Specifically, the silicon oxynitride layer and the silicon nitride layer can be formed by LPCVD or PECVD, but are not limited to these methods. Preferably, they are formed by LPCVD.

[0050] Preferably, please refer to Figure 3 In some implementation methods, the treatment of quartz furnace tubes includes the following steps: S11: Heat the tube to above 600℃ and evacuate it until the internal pressure is ≤10mtorr; S12: A nitrogen source, an oxygen source, and a silicon source are introduced into the tube, and a silicon oxynitride layer is formed under the conditions of a temperature of 600℃~750℃ and a pressure of 80mtorr~1000mtorr. S13: A silicon nitride layer is formed by introducing a nitrogen source and a silicon source into the tube body at a temperature of 600℃~750℃ and a pressure of 80mtorr~1000mtorr. S14: A silicon source is introduced into the tube, and an external silicon layer is formed under the conditions of a temperature of 550℃~750℃ and a pressure of 80mtorr~1000mtorr. S15: Evacuate the tube to a low pressure of ≤10 mtorr, then introduce nitrogen gas at a flow rate of 2000 sccm~15000 sccm into the tube and purge for more than 100 seconds.

[0051] Specifically, in step S11, the temperature inside the tube is raised to 610℃~650℃, while a vacuum is drawn until the pressure inside the tube is 1mtorr~10mtorr. By drawing a vacuum, impurity gases inside the tube can be removed, preventing them from participating in side reactions or contaminating the deposition layer interface during the subsequent high-temperature film formation process.

[0052] Specifically, in step S12, the nitrogen source is ammonia. The oxygen source is nitrous oxide (N2O), oxygen, or ozone, but is not limited to these; nitrous oxide is preferred. The silicon source is silane (SiH4), dichlorosilane (SiH2Cl2), or trichlorosilane (SiHCl3), but is not limited to these; silane is preferred. By controlling the flow ratio of the nitrogen and oxygen sources, the reaction temperature, and the pressure, a silicon oxynitride layer with specific oxygen and nitrogen contents can be obtained, thereby improving the thermal stress buffering effect.

[0053] Specifically, in step S13, the nitrogen source is ammonia or nitrogen, but is not limited to these; preferably, it is ammonia. The silicon source is silane (SiH4), dichlorosilane (SiH2Cl2), or trichlorosilane (SiHCl3), but is not limited to these; preferably, it is silane.

[0054] Specifically, in step S14, the silicon source is silane (SiH4), but is not limited to it; preferably, it is silane.

[0055] Specifically, in step S15, vacuuming and nitrogen purging provide a clean process environment, which can then be directly used for the preparation of related films in subsequent photovoltaic cells, thereby improving the preparation efficiency.

[0056] Specifically, in step S15, the bottom pressure is 1 mtorr to 10 mtorr and the purging time is 100 s to 500 s to fully remove residual gas.

[0057] Preferably, preferably, please refer to Figure 4 In some implementation methods, the treatment of quartz furnace tubes includes the following steps: S21: Heat the tube to above 600℃ and evacuate it until the internal pressure is ≤10mtorr; S22: Introduce oxygen at a flow rate of 1000 sccm to 10000 sccm into the tube and oxidize and burn the tube for more than 10 minutes; S23: A nitrogen source, an oxygen source, and a silicon source are introduced into the tube, and a silicon oxynitride layer is formed under the conditions of a temperature of 600℃~750℃ and a pressure of 80mtorr~1000mtorr. S24: A silicon nitride layer is formed by introducing a nitrogen source and a silicon source into the tube body at a temperature of 600℃~750℃ and a pressure of 80mtorr~1000mtorr. S25: A silicon source is introduced into the tube, and an external silicon layer is formed under the conditions of a temperature of 550℃~750℃ and a pressure of 80mtorr~1000mtorr. S26: Evacuate the tube to a low pressure of ≤10 mtorr, then introduce nitrogen gas at a flow rate of 2000 sccm~15000 sccm into the tube and purge for more than 100 seconds.

[0058] Specifically, in step S22, high-temperature oxidation of the tube using high-flow oxygen can remove contaminants adhering to the inner wall of the tube, providing a clean and active surface basis for the subsequent formation of the silicon oxynitride layer and improving the quality of the film.

[0059] Specifically, in step S22, the oxidation burning time is 15 min to 60 min, preferably 15 min to 30 min.

[0060] Preferably, please refer to Figure 5 In some implementation methods, the treatment of quartz furnace tubes includes the following steps: S31: Heat the tube to above 600℃ and evacuate it until the internal pressure is ≤10mtorr; S32: Purge the tube with nitrogen gas at a flow rate of 1000 sccm~18000 sccm for 30s~900s; S33: A nitrogen source, an oxygen source, and a silicon source are introduced into the tube, and a silicon oxynitride layer is formed under the conditions of a temperature of 600℃~750℃ and a pressure of 80mtorr~1000mtorr. S34: A silicon nitride layer is formed by introducing a nitrogen source and a silicon source into the tube body at a temperature of 600℃~750℃ and a pressure of 80mtorr~1000mtorr. S35: A silicon source is introduced into the tube, and an external silicon layer is formed under the conditions of a temperature of 550℃~750℃ and a pressure of 80mtorr~1000mtorr. S36: Evacuate the tube to a low pressure of ≤10 mtorr, then introduce nitrogen gas at a flow rate of 2000 sccm~15000 sccm into the tube and purge for more than 100 seconds.

[0061] Specifically, in step S32, nitrogen purging can effectively remove impurity gases, avoid interference from impurity gases on subsequent silicon oxynitride layer deposition, and ensure interface purity and composition controllability.

[0062] Specifically, in step S32, the bottom pressure is 1 mtorr to 10 mtorr to ensure that the residual gas concentration is reduced to a minimum, providing a high-purity reaction chamber environment for the subsequent precise deposition of multilayer films.

[0063] Preferably, please refer to Figure 6 In some implementation methods, the treatment of quartz furnace tubes includes the following steps: S41: Heat the tube to above 600℃ and evacuate it until the internal pressure is ≤10mtorr; S42: Introduce oxygen at a flow rate of 1000 sccm to 10000 sccm into the tube and oxidize and burn the tube for more than 10 minutes; S43: Evacuate the tube to a low pressure of ≤10mtorr, then purge with nitrogen gas at a flow rate of 1000sccm~18000sccm for 30s~900s; S44: A nitrogen source, an oxygen source, and a silicon source are introduced into the tube, and a silicon oxynitride layer is formed under the conditions of a temperature of 600℃~750℃ and a pressure of 80mtorr~1000mtorr. S45: A silicon nitride layer is formed by introducing a nitrogen source and a silicon source into the tube body at a temperature of 600℃~750℃ and a pressure of 80mtorr~1000mtorr. S46: A silicon source is introduced into the tube, and an external silicon layer is formed under the conditions of a temperature of 550℃~750℃ and a pressure of 80mtorr~1000mtorr. S47: Evacuate the tube to a low pressure of ≤10 mtorr, then introduce nitrogen gas at a flow rate of 2000 sccm~15000 sccm into the tube and purge for more than 100 seconds.

[0064] Accordingly, please refer to Figure 7As a third aspect of the present invention, the present invention also discloses a method for processing quartz furnace tubes, which includes the following steps: S1: An initial stress transition layer is formed on the inner wall of the tube; S2: After the tube body deposits the film to be deposited 100 to 500 times, a stress-compensating transition layer is formed on the inner wall of the tube body; The initial stress transition layer and the compensating stress transition layer both include an inner layer and an external silicon layer stacked sequentially. The thermal expansion coefficient of the inner layer is less than that of the external silicon layer and greater than or equal to that of the tube body. The film to be deposited includes at least one of silicon oxide, silicon nitride, silicon oxynitride, amorphous silicon, or polycrystalline silicon. By introducing the initial stress transition layer, a buffer structure with a thermal expansion coefficient increasing sequentially from the inside to the outside can be formed, thereby effectively buffering thermal stress during the heating and cooling process of the quartz furnace tube and reducing the cracking and falling off of the stress transition layer and the adsorption layer attached thereto. Furthermore, after depositing the film to be deposited 100 to 500 times, a compensating stress transition layer is formed, which can repair microcracks and interface fatigue caused by thermal cycling, improve the thermal buffering effect, thereby reducing the cracking and falling off of the stress transition layer and the adsorption layer attached thereto, improving the manufacturing yield of photovoltaic cells, and extending the service life of the printing screen.

[0065] Specifically, the inner layer may be made of one or more of silicon nitride, silicon oxynitride, tantalum nitride, or chromium nitride, but is not limited thereto. Preferably, in some embodiments, the inner layer is a silicon nitride layer and / or a silicon oxynitride layer.

[0066] Specifically, the exogenous silicon layer is a product obtained by deposition from an exogenous silicon-containing gas source. Specifically, the exogenous silicon layer can be made of one or more of amorphous silicon, polycrystalline silicon, and microcrystalline silicon, but is not limited thereto. Preferably, in some embodiments, the exogenous silicon layer is a polycrystalline silicon layer and / or an amorphous silicon layer.

[0067] Specifically, the thickness of the inner layer is ≥10nm. More specifically, the thickness of the inner layer is 10nm~20μm, preferably 20nm~15μm, and more preferably 50nm~5μm.

[0068] Specifically, the thickness of the exogenous silicon layer is ≥100nm. More specifically, the thickness of the exogenous silicon layer is 100nm~1μm, preferably 100nm~800nm, and more preferably 100nm~500nm.

[0069] Preferably, in some embodiments, the initial stress transition layer includes a first silicon oxynitride layer, a first silicon nitride layer, and a first exogenous silicon layer stacked sequentially.

[0070] The thickness of the first silicon oxynitride layer is 5 nm to 5 μm, preferably 30 nm to 3 μm. The oxygen content in the first silicon oxynitride layer is 45 at.% to 55 at.%, and the nitrogen content is 5 at.% to 20 at.%. The thickness of the first silicon nitride layer is 5 nm to 10 μm, preferably 20 nm to 5 μm. The thickness of the first exogenous silicon layer is 100 nm to 500 nm.

[0071] Preferably, in some embodiments, the stress-compensating transition layer comprises a second silicon oxynitride layer, a second silicon nitride layer, and a second exogenous silicon layer stacked sequentially.

[0072] The thickness of the second silicon oxynitride layer is 5 nm to 2 μm, preferably 30 nm to 1.5 μm. The oxygen content in the second silicon oxynitride layer is 35 at.% to 45 at.%, and the nitrogen content is 15 at.% to 25 at.%. The thickness of the second silicon nitride layer is 5 nm to 5 μm, preferably 20 nm to 3 μm. The thickness of the second exogenous silicon layer is 100 nm to 500 nm.

[0073] Specifically, the inner layer can be formed by LPCVD, PECVD, or PVD, but is not limited to these methods. Preferably, in some embodiments, the inner layer is formed by LPCVD. The formation temperature of the inner layer is 550°C to 750°C. Preferably, in some embodiments, the formation temperature of the inner layer in the initial stress transition layer is 550°C to 750°C, and the formation temperature of the inner layer in the compensation stress transition layer is 500°C to 650°C. Using a lower temperature during the growth of the compensation stress layer can effectively suppress lattice distortion caused by thermal stress and improve the stability of the compensation stress layer.

[0074] Specifically, the exogenous silicon layer can be formed by LPCVD, PECVD, and MOCVD, but is not limited to these methods. Preferably, in some embodiments, the exogenous silicon layer is formed by LPCVD, and the formation temperature of the exogenous silicon layer is 550°C to 750°C. Preferably, in some embodiments, the formation temperature of the exogenous silicon layer in the initial stress transition layer is 550°C to 750°C, and the formation temperature of the exogenous silicon layer in the stress compensation transition layer is 500°C to 650°C. Using a lower temperature during the growth of the stress compensation layer can effectively suppress lattice distortion caused by thermal stress and improve the stability of the stress compensation layer.

[0075] The present invention will be further described below with reference to specific embodiments: Example 1 This embodiment provides a quartz furnace tube, which includes a tube body and a stress transition layer on the inner wall of the tube body. The stress transition layer includes an inner layer and an exogenous silicon layer stacked sequentially on the inner wall.

[0076] The inner layer is a silicon nitride layer with a thickness of 10 nm. The outer silicon layer is a polycrystalline silicon layer with a thickness of 1 μm.

[0077] The method for processing the quartz furnace tube in this embodiment is as follows: (1) Heat the tube to 630°C and evacuate it until the pressure inside the tube is 5 mtorr; (2) Introduce oxygen at a flow rate of 3500 sccm into the tube and oxidize and burn the tube for 25 minutes; (3) Evacuate the tube to a bottom pressure of 5 mtorr, then purge with nitrogen gas at a flow rate of 12000 sccm for 120s; (4) A silicon nitride layer is formed by introducing a nitrogen source (NH3) and a silicon source (SiH2Cl2) into the tube body at a temperature of 740℃ and a pressure of 450mtorr. (5) A silicon source (SiH2Cl2) is introduced into the tube, and an external silicon layer is formed under the conditions of 750℃ and 500mtorr. (6) Evacuate the tube to a low pressure of 4 mtorr, and then introduce nitrogen gas at a flow rate of 15000 sccm into the tube and purge for 300 s.

[0078] Example 2 This embodiment provides a quartz furnace tube, which includes a tube body and a stress transition layer on the inner wall of the tube body. The stress transition layer includes an inner layer and an exogenous silicon layer stacked sequentially on the inner wall.

[0079] The inner layer is a silicon nitride layer with a thickness of 15 μm. The outer silicon layer is an amorphous silicon layer with a thickness of 100 nm.

[0080] The method for processing the quartz furnace tube in this embodiment is as follows: (1) Heat the tube to 630°C and evacuate it until the pressure inside the tube is 5 mtorr; (2) Introduce oxygen at a flow rate of 3500 sccm into the tube and oxidize and burn the tube for 25 minutes; (3) Evacuate the tube to a bottom pressure of 5 mtorr, then purge with nitrogen gas at a flow rate of 12000 sccm for 120s; (4) A nitrogen source (NH3) and a silicon source (SiH4) are introduced into the tube, and a silicon nitride layer is formed at a temperature of 720°C and a pressure of 400 mtorr. (5) A silicon source (SiH4) is introduced into the tube body to form an external silicon layer at a temperature of 580°C and a pressure of 150 mtorr. (6) Evacuate the tube to a low pressure of 4 mtorr, and then introduce nitrogen gas at a flow rate of 15000 sccm into the tube and purge for 300 s.

[0081] Example 3 This embodiment provides a quartz furnace tube, which includes a tube body and a stress transition layer on the inner wall of the tube body. The stress transition layer includes an inner layer and an exogenous silicon layer stacked sequentially on the inner wall.

[0082] The inner layer is a silicon nitride layer with a thickness of 2 μm. The outer silicon layer is an amorphous silicon layer with a thickness of 300 nm.

[0083] The method for processing the quartz furnace tube in this embodiment is as follows: (1) Heat the tube to 630°C and evacuate it until the pressure inside the tube is 5 mtorr; (2) Introduce oxygen at a flow rate of 3500 sccm into the tube and oxidize and burn the tube for 25 minutes; (3) Evacuate the tube to a bottom pressure of 5 mtorr, then purge with nitrogen gas at a flow rate of 12000 sccm for 120s; (4) A nitrogen source (NH3) and a silicon source (SiH4) are introduced into the tube, and a silicon nitride layer is formed at a temperature of 720°C and a pressure of 400 mtorr. (5) A silicon source (SiH4) is introduced into the tube body to form an external silicon layer at a temperature of 580°C and a pressure of 600 mtorr. (6) Evacuate the tube to a low pressure of 4 mtorr, and then purge the tube with nitrogen gas at a flow rate of 15000 sccm for 300s.

[0084] Example 4 This embodiment provides a quartz furnace tube, which includes a tube body and a stress transition layer on the inner wall of the tube body. The stress transition layer includes an inner layer and an exogenous silicon layer stacked sequentially on the inner wall.

[0085] The inner layer comprises a silicon oxynitride layer and a silicon nitride layer stacked sequentially. The silicon oxynitride layer contains 37 at.% oxygen and 37 at.% nitrogen, and has a thickness of 1.5 μm; the silicon nitride layer also has a thickness of 1.5 μm. The exogenous silicon layer is a polycrystalline silicon layer with a thickness of 420 nm.

[0086] The method for processing the quartz furnace tube in this embodiment is as follows: (1) Heat the tube to 620°C and evacuate it until the pressure inside the tube is 3 mtorr; (2) Introduce oxygen at a flow rate of 5000 sccm into the tube and oxidize and burn the tube for 30 minutes; (3) Evacuate the tube to a bottom pressure of 5 mtorr, then purge with nitrogen gas at a flow rate of 15000 sccm for 100 s; (4) A nitrogen source (NH3), an oxygen source (N2O) and a silicon source (SiH4) are introduced into the tube to form a silicon oxynitride layer at a temperature of 700℃ and a pressure of 500mtorr. (5) A nitrogen source (NH3) and a silicon source (SiH4) are introduced into the tube, and a silicon nitride layer is formed at a temperature of 720°C and a pressure of 400 mtorr. (6) A silicon source (SiH4) is introduced into the tube body to form an external silicon layer at a temperature of 620°C and a pressure of 750 mtorr. (7) Evacuate the tube to a low pressure of 4 mtorr, and then purge the tube with nitrogen gas at a flow rate of 15000 sccm for 300 s.

[0087] Example 5 This embodiment provides a quartz furnace tube, which includes a tube body and a stress transition layer on the inner wall of the tube body. The stress transition layer includes an inner layer and an exogenous silicon layer stacked sequentially on the inner wall.

[0088] The inner layer comprises a silicon oxynitride layer and a silicon nitride layer stacked sequentially. The silicon oxynitride layer contains 50.5 at.% oxygen and 13.5 at.% nitrogen, and has a thickness of 2 μm; the silicon nitride layer has a thickness of 1 μm. The exogenous silicon layer is a polycrystalline silicon layer with a thickness of 420 nm.

[0089] The method for processing the quartz furnace tube in this embodiment is as follows: (1) Heat the tube to 620°C and evacuate it until the pressure inside the tube is 3 mtorr; (2) Introduce oxygen at a flow rate of 5000 sccm into the tube and oxidize and burn the tube for 30 minutes; (3) Evacuate the tube to a bottom pressure of 5 mtorr, then purge with nitrogen gas at a flow rate of 15000 sccm for 100 s; (4) A nitrogen source (NH3), an oxygen source (N2O) and a silicon source (SiH4) are introduced into the tube to form a silicon oxynitride layer at a temperature of 680°C and a pressure of 500 mtorr. (5) A nitrogen source (NH3) and a silicon source (SiH4) are introduced into the tube, and a silicon nitride layer is formed at a temperature of 720°C and a pressure of 400 mtorr. (6) A silicon source (SiH4) is introduced into the tube body to form an external silicon layer at a temperature of 620°C and a pressure of 750 mtorr. (7) Evacuate the tube to a low pressure of 4 mtorr, and then purge the tube with nitrogen gas at a flow rate of 15000 sccm for 300 s.

[0090] Comparative Example This comparative example provides a quartz furnace tube, which differs from Example 1 in that the stress transition layer only includes an exogenous silicon layer and does not include an inner layer.

[0091] Production experiments were conducted on the quartz furnace tubes obtained in Examples 1-5 as comparative examples. The correlation between slag shedding and yield rate and printing screen lifespan was statistically analyzed. Based on the comparative data, the improvement in screen lifespan was calculated. Specific data are shown in the table below:

[0092] In the description of this specification, the references to terms such as "one embodiment," "some embodiments," "example," "specific example," or "some examples," etc., indicate that a specific feature, structure, material, or characteristic described in connection with the described embodiment or example is included in at least one embodiment or example of this application. In this specification, the illustrative expressions of the above terms do not necessarily refer to the same embodiment or example. Furthermore, the specific features, structures, materials, or characteristics described may be combined in any suitable manner in one or more embodiments or examples.

[0093] Although embodiments of this application have been shown and described, those skilled in the art will understand that various changes, modifications, substitutions and alterations can be made to these embodiments without departing from the principles and spirit of this application, the scope of which is defined by the claims and their equivalents.

Claims

1. A quartz furnace tube, characterized in that, The device includes a tube body, and a stress transition layer is provided on the inner wall of the tube body. The stress transition layer includes an inner layer and an external silicon layer stacked sequentially on the inner wall. The thermal expansion coefficient of the inner layer is less than that of the external silicon layer and greater than or equal to that of the tube body.

2. The quartz furnace tube as described in claim 1, characterized in that, The inner layer is a silicon oxynitride layer and / or a silicon nitride layer; The exogenous silicon layer is a polycrystalline silicon layer and / or an amorphous silicon layer.

3. The quartz furnace tube as described in claim 1, characterized in that, The thickness of the exogenous silicon layer is ≥100nm.

4. The quartz furnace tube as described in claim 1, characterized in that, The inner layer includes a silicon oxynitride layer and a silicon nitride layer; The silicon oxynitride layer is disposed on the surface of the inner wall of the tube, and the silicon nitride layer is disposed between the silicon oxynitride layer and the exogenous silicon layer.

5. The quartz furnace tube as described in claim 4, characterized in that, The thickness of the silicon oxynitride layer is 5 nm to 5 μm; The thickness of the silicon nitride layer is 5 nm to 10 μm; The thickness of the exogenous silicon layer is 100nm~500nm.

6. The quartz furnace tube as described in any one of claims 1 to 5, characterized in that, The inner wall of the tube is sandblasted or polished.

7. The quartz furnace tube as described in any one of claims 1 to 5, characterized in that, The inner wall of the tube is sandblasted, and a microstructure is formed on the inner wall of the tube. The inner layer covers the microstructure.

8. A method for processing quartz furnace tubes, characterized in that, include: A stress transition layer is formed on the inner wall of the tube; The stress transition layer comprises an inner layer and an external silicon layer sequentially stacked on the inner wall; the thermal expansion coefficient of the inner layer is less than that of the external silicon layer and greater than or equal to that of the tube body.

9. The method for processing quartz furnace tubes as described in claim 8, characterized in that, The inner layer includes a silicon oxynitride layer and a silicon nitride layer; The silicon oxynitride layer is disposed on the surface of the inner wall of the tube, and the silicon nitride layer is disposed between the silicon oxynitride layer and the exogenous silicon layer.

10. The method for processing quartz furnace tubes as described in claim 9, characterized in that, The processing method includes: Heat the tube to over 600℃ and evacuate it until the internal pressure is ≤10mtorr; A nitrogen source, an oxygen source, and a silicon source are introduced into the tube body to form a silicon oxynitride layer under conditions of 600℃~750℃ and 80mtorr~1000mtorr. A nitrogen source and a silicon source are introduced into the tube body to form a silicon nitride layer under conditions of 600℃~750℃ and 80mtorr~1000mtorr. A silicon source is introduced into the tube, and an external silicon layer is formed under conditions of 550℃~750℃ and 80mtorr~1000mtorr. The tube is evacuated to a low pressure of ≤10 mtorr, and then nitrogen gas with a flow rate of 2000 sccm~15000 sccm is introduced into the tube and purged for more than 100 seconds.

11. The method for processing quartz furnace tubes as described in claim 9, characterized in that, The processing method includes: Heat the tube to over 600℃ and evacuate it until the internal pressure is ≤10mtorr; Oxygen at a flow rate of 1000 sccm to 10000 sccm is introduced into the tube body, and the tube is oxidized and burned for more than 10 minutes; A nitrogen source, an oxygen source, and a silicon source are introduced into the tube body to form a silicon oxynitride layer under conditions of 600℃~750℃ and 80mtorr~1000mtorr. A nitrogen source and a silicon source are introduced into the tube body to form a silicon nitride layer under conditions of 600℃~750℃ and 80mtorr~1000mtorr. A silicon source is introduced into the tube, and an external silicon layer is formed under conditions of 550℃~750℃ and 80mtorr~1000mtorr. The tube is evacuated to a low pressure of ≤10 mtorr, and then nitrogen gas with a flow rate of 2000 sccm~15000 sccm is introduced into the tube and purged for more than 100 seconds.

12. The method for processing quartz furnace tubes as described in claim 9, characterized in that, The processing method includes: Heat the tube to over 600℃ and evacuate it until the internal pressure is ≤10mtorr; Nitrogen gas with a flow rate of 1000 sccm to 18000 sccm is introduced into the tube and purged for 30 to 900 seconds. A nitrogen source, an oxygen source, and a silicon source are introduced into the tube body to form a silicon oxynitride layer under conditions of 600℃~750℃ and 80mtorr~1000mtorr. A nitrogen source and a silicon source are introduced into the tube body to form a silicon nitride layer under conditions of 600℃~750℃ and 80mtorr~1000mtorr. A silicon source is introduced into the tube, and an external silicon layer is formed under conditions of 550℃~750℃ and 80mtorr~1000mtorr. The tube is evacuated to a low pressure of ≤10 mtorr, and then nitrogen gas with a flow rate of 2000 sccm~15000 sccm is introduced into the tube and purged for more than 100 seconds.

13. The method for processing quartz furnace tubes as described in claim 9, characterized in that, The processing method includes: Heat the tube to over 600℃ and evacuate it until the internal pressure is ≤10mtorr; Oxygen at a flow rate of 1000 sccm to 10000 sccm is introduced into the tube body, and the tube is oxidized and burned for more than 10 minutes; The tube body is evacuated to a low pressure of ≤10 mtorr, and then nitrogen gas with a flow rate of 1000 sccm~18000 sccm is introduced and purged for 30s~900s. A nitrogen source, an oxygen source, and a silicon source are introduced into the tube body to form a silicon oxynitride layer under conditions of 600℃~750℃ and 80mtorr~1000mtorr. A nitrogen source and a silicon source are introduced into the tube body to form a silicon nitride layer under conditions of 600℃~750℃ and 80mtorr~1000mtorr. A silicon source is introduced into the tube, and an external silicon layer is formed under conditions of 550℃~750℃ and 80mtorr~1000mtorr. The tube is evacuated to a low pressure of ≤10 mtorr, and then nitrogen gas with a flow rate of 2000 sccm~15000 sccm is introduced into the tube and purged for more than 100 seconds.

14. The method for processing quartz furnace tubes as described in any one of claims 10 to 13, characterized in that, The nitrogen source is ammonia; and / or The oxygen source is nitrous oxide; and / or The silicon source is silane, dichlorosilane, or trichlorosilane.

15. A method for processing quartz furnace tubes, characterized in that, include: An initial stress transition layer is formed on the inner wall of the tube; After the tube body deposits the film to be deposited 100 to 500 times, a stress-compensating transition layer is formed on the inner wall of the tube body; The initial stress transition layer and the compensating stress transition layer each include an inner layer and an external silicon layer stacked sequentially; the thermal expansion coefficient of the inner layer is less than that of the external silicon layer and greater than or equal to that of the tube body. The film to be deposited includes at least one of silicon oxide, silicon nitride, silicon oxynitride, polycrystalline silicon, and amorphous silicon.

16. The method for processing quartz furnace tubes as described in claim 15, characterized in that, The initial stress transition layer comprises a first silicon oxynitride layer, a first silicon nitride layer, and a first exogenous silicon layer stacked sequentially. The thickness of the first silicon oxynitride layer is 5nm~5μm, the thickness of the first silicon nitride layer is 5nm~10μm, and the thickness of the first exogenous silicon layer is 100nm~500nm.

17. The method for processing quartz furnace tubes as described in claim 15, characterized in that, The stress-compensating transition layer comprises a second silicon oxynitride layer, a second silicon nitride layer, and a second exogenous silicon layer stacked sequentially. The thickness of the second silicon oxynitride layer is 5nm~2μm, the thickness of the second silicon nitride layer is 5nm~5μm, and the thickness of the second exogenous silicon layer is 100nm~500nm.

18. The method for processing quartz furnace tubes as described in claim 15, characterized in that, The initial stress transition layer is formed at a temperature of 550℃ to 750℃, and the compensating stress transition layer is formed at a temperature of 500℃ to 650℃.

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