A system and method for monitoring the volume fraction of a si c fiber reinforced metal matrix composite precursor filament
Patent Information
- Application Number
- CN202611224373.6
- Authority / Receiving Office
- CN · China
- Patent Type
- Applications(China)
- Current Assignee / Owner
- Filing Date
- 2026-08-13
- Publication Date
- 2026-10-20
AI Technical Summary
[0006]1.常规检测设备如直径千分尺、激光测径仪等需在镀膜结束后取样测量,无法实现原位监控,导致工艺参数调整滞后;
[0044]1.本发明通过在磁控溅射设备内部设置与先驱丝样品邻近的基体标样单元,利用镀膜过程中电阻值变化反演膜层生长厚度,实现了先驱丝镀层厚度及体积分数的实时在线监测,克服了现有技术无法原位监控、工艺参数调整滞后的缺陷。
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Abstract
Description
Technical Field
[0001] This invention belongs to the field of metal matrix composite material preparation technology, specifically a system and method for monitoring the volume fraction of precursor fibers in SiC fiber-reinforced metal matrix composite materials. Background Technology
[0002] Continuous SiC fiber-reinforced metal matrix composites possess high specific strength, high specific stiffness, good high temperature resistance, creep resistance, and fatigue resistance, making them ideal high-temperature lightweight structural materials with clear application prospects in aerospace, aviation, and deep-sea fields.
[0003] SiC fiber-reinforced metal matrix composite tubular and axial structural components are typically fabricated using the precursor wire prefabrication method. This method offers advantages such as unrestricted matrix alloy type and composition, precise control of the fiber volume fraction, and excellent weaving properties, making it particularly suitable for fabricating complex-shaped components. The main process flow is as follows: First, the matrix alloy is coated onto the SiC fiber surface using physical vapor deposition (PVD) to create a composite precursor wire. Then, the precursor wire is woven and laid onto the inner sheath of the prefabrication using a winding device. Next, the components of the inner and outer sheaths of the prefabrication are assembled and fixed. Finally, the structural component is densified and formed through high-temperature pressing.
[0004] As can be seen from the above, the quality of the precursor fiber coating in composite materials directly affects the mechanical properties of composite structural components. Precisely controlling the thickness of the precursor fiber matrix coating and the volume fraction of the reinforcement is of great significance for the dimensional accuracy and performance stability of composite components.
[0005] Current methods for detecting the thickness of precursor wire coatings in composite materials have the following problems:
[0006] 1. Conventional testing equipment, such as micrometers and laser diameter gauges, requires sampling and measurement after coating is completed, which cannot achieve in-situ monitoring and leads to a lag in the adjustment of process parameters;
[0007] 2. High-precision optical instruments require complex calibration and are sensitive to the surface finish of samples. They are also limited by the space and ambient temperature conditions within the magnetron sputtering equipment, making online monitoring difficult.
[0008] Therefore, there is an urgent need to develop a method that can monitor the thickness and volume fraction of the precursor wire coating in real time during magnetron sputtering coating process, so as to achieve closed-loop control of process parameters and improve the preparation quality and efficiency of composite precursor wires. Summary of the Invention
[0009] The purpose of this invention is to provide a system and method for monitoring the volume fraction of precursor fibers in SiC fiber-reinforced metal matrix composites.
[0010] The technical solution adopted by the present invention to achieve the above objectives is: a SiC fiber-reinforced metal matrix composite precursor fiber volume fraction monitoring system, comprising:
[0011] The substrate standard unit is set in the coating working area of the magnetron sputtering equipment and is located near the pilot wire sample;
[0012] A resistance meter is installed outside the magnetron sputtering equipment and is electrically connected to the substrate standard unit via a shielded cable. It is used to measure the resistance value of the substrate standard unit in real time.
[0013] The equipment control system is connected to the control terminals of the ohmmeter and the magnetron sputtering equipment, respectively. It is used to collect and analyze the detection data of the ohmmeter, calculate the coating thickness and the pilot wire volume fraction, and transmit feedback control signals to the magnetron sputtering equipment.
[0014] The substrate standard unit includes: a substrate standard, electrode wires, and an insulating shielding sleeve;
[0015] The substrate standard is a filamentous or foil-shaped conductor, made of the same material as the substrate coating material of the magnetron sputtering, with a diameter of 0.1–1.0 mm and a length of 20–120 mm;
[0016] The electrode wires are made of molybdenum wire or tungsten wire, and are made of high-temperature resistant conductive material, and are in close contact with both ends of the substrate standard.
[0017] The insulating shield is made of alumina, silicon dioxide, or zirconium oxide and is made of high-temperature resistant insulating material. It is wrapped around both ends of the substrate sample and the outside of the electrode wires. The middle part of the substrate sample is exposed outside the insulating shield, and the exposed length is 10-100mm.
[0018] The shielded cable passes through the magnetron sputtering equipment and is then welded to the electrode wires.
[0019] The portion of the shielded cable located inside the magnetron sputtering equipment is fitted with a metal shielding tube, which is grounded and has an inner diameter larger than the outer diameter of the shielded cable.
[0020] The linear distance between the substrate standard unit and the pilot wire sample is 10-50 mm, and the axial direction of the exposed part of the substrate standard is parallel to the axial direction of the pilot wire sample so that the coating growth conditions on the surfaces of the two are consistent.
[0021] The substrate standard unit is installed in the coating working area of the magnetron sputtering equipment via an insulating fixing bracket. The insulating fixing bracket is made of alumina ceramic and is used to isolate the electrical connection between the substrate standard unit and the cavity of the magnetron sputtering equipment.
[0022] The resistance meter has a measuring range of 0.1mΩ to 10Ω and a resolution of ±0.1%.
[0023] A method for monitoring the volume fraction of precursor fibers in SiC fiber-reinforced metal matrix composites includes the following steps:
[0024] Step S1: The substrate standard sample unit is placed in the coating working area of the magnetron sputtering equipment and located near the pilot wire sample. The resistance meter is connected to the electrode wire of the substrate standard sample unit through the shielded cable. The equipment control system is connected to the control terminal signal of the resistance meter and the magnetron sputtering equipment respectively. The resistance meter is turned on to confirm that the detection is normal and the entire system is working normally.
[0025] Step S2: Measure the initial resistance value of the substrate standard unit using a ohmmeter. ;
[0026] Step S3: During the magnetron sputtering coating process, the resistance value of the substrate standard unit after coating is measured in real time using a resistance meter. And based on the initial resistance value Resistance value after coating Resistivity of the substrate coating material And the deposition length L of the standard sample, to calculate the coating thickness of the substrate standard sample. ;
[0027] Step S4: Based on the difference in installation position between the substrate standard unit and the pilot wire sample, adjust the coating thickness. Make corrections to obtain the actual coating thickness of the pilot wire. Then, based on the actual coating thickness... and SiC fiber diameter The actual volume fraction of the precursor fiber was calculated. ;
[0028] Step S5: Feed back the actual precursor wire volume fraction to the equipment control system, which then automatically adjusts the process parameters of the magnetron sputtering equipment to achieve closed-loop control.
[0029] In step S3, the coating thickness of the substrate standard sample is calculated. Specifically:
[0030] (1) When the substrate standard sample is a cylindrical wire, the coating thickness is derived from the inverse relationship between the resistance and the cross-sectional area before and after coating:
[0031]
[0032] in, The initial diameter of the matrix standard sample;
[0033] (2) When the substrate standard is foil, let its initial width be... Initial thickness is The coating thickness ,Right now:
[0034]
[0035] The coating thickness is obtained by solving the equation and taking its positive root. .
[0036] In step S4, the thickness of the coating is... Make corrections to obtain the actual coating thickness of the pilot wire. Specifically:
[0037] Based on the spatial positional difference between the substrate standard unit and the precursor wire sample within the magnetron sputtering equipment, a coating thickness correction factor k is determined, and the coating thickness of the substrate standard is adjusted accordingly. Multiply by the correction factor The corrected thickness of the precursor wire substrate coating was obtained. The corrected relation is: .
[0038] In step S4, the volume fraction of the precursor fiber is calculated. Specifically:
[0039] According to the coating thickness With SiC fiber diameter Calculate the total cross-sectional area of the precursor filament and the proportion of the SiC fiber cross-sectional area, i.e.:
[0040]
[0041] in, The diameter of the SiC fiber. The actual coating thickness of the precursor wire is obtained after correction.
[0042] In step S5, the process parameters include: sputtering power, sputtering gas pressure, substrate rotation speed, and sputtering time.
[0043] The present invention has the following beneficial effects and advantages:
[0044] 1. This invention achieves real-time online monitoring of the thickness and volume fraction of the precursor wire coating by setting a substrate standard unit adjacent to the precursor wire sample inside the magnetron sputtering equipment and using the change in resistance value during the coating process to invert the film growth thickness. This overcomes the shortcomings of existing technologies, such as the inability to monitor in situ and the lag in adjusting process parameters.
[0045] 2. This invention integrates real-time measured volume fraction data into the equipment control system, automatically adjusting process parameters such as sputtering power, sputtering gas pressure, substrate rotation speed, and sputtering time, thereby achieving closed-loop feedback control of the coating process and effectively improving the consistency of the pilot wire coating thickness and the control accuracy of the volume fraction.
[0046] 3. This invention uses the resistance method as a monitoring means, requiring only basic components such as substrate standard, electrode wires, insulating shielding sleeve, and resistance meter. The device has a simple structure, low cost, is less restricted by the internal space and ambient temperature of the magnetron sputtering equipment, and is convenient and flexible to implement, which is conducive to industrial promotion and application.
[0047] 4. In this invention, the substrate standard sample is made of the same material as the substrate coating, the electrode wire is made of molybdenum wire or tungsten wire, and the insulating shield is made of alumina, silicon dioxide or zirconium oxide, which ensures the long-term stability and reliability of the monitoring system in a high-temperature vacuum environment and guarantees the accuracy of the resistance measurement data.
[0048] 5. This invention uses the quantitative conversion relationship between resistance change and coating thickness, combined with the SiC fiber diameter, to directly calculate the volume fraction. The calculation method is intuitive and reliable, and the volume fraction data can be obtained simultaneously during the preparation process without damaging the sample, providing real-time data support for process optimization.
[0049] 6. This invention is applicable to the magnetron sputtering preparation process of precursor wires for various metal matrix composites such as SiC fiber reinforced titanium matrix and copper matrix. By adapting the matrix standard material, size and correction coefficient, it can be extended to composite material systems with different matrix systems and different fiber diameters, and has good versatility.
[0050] 7. The entire monitoring process of this invention does not involve contact with the pilot wire sample or damage the surface state of the coating. It is a non-destructive monitoring method, which avoids the sample loss and extended preparation cycle caused by the need to cut samples for destructive testing in the prior art. This is beneficial to improving production efficiency and material utilization. Attached Figure Description
[0051] Figure 1 This is a schematic diagram of the online monitoring system device of the present invention.
[0052] Figure 2 This is a schematic diagram of the matrix standard unit of the present invention.
[0053] Wherein: 1 is the substrate standard sample, 2 is the electrode wire, 3 is the insulating shielding sleeve, 4 is the shielded cable, 5 is the substrate standard sample unit, 6 is the ohmmeter, 7 is the equipment control system, 8 is the magnetron sputtering equipment, and 9 is the pilot wire sample. Detailed Implementation
[0054] The present invention will now be described in further detail with reference to the accompanying drawings and embodiments.
[0055] like Figure 1 As shown, the online monitoring system of the present invention mainly consists of three parts: a substrate standard sample unit 5, a resistance meter 6, and an equipment control system 7.
[0056] The substrate standard sample unit 5 is located within the coating working area of the magnetron sputtering equipment 8 and is positioned near the pilot wire sample 9. For example... Figure 2 As shown, the substrate standard unit 5 includes a substrate standard 1, electrode wires 2, and an insulating shield 3. The substrate standard 1 is made of wire of the same material as the substrate coating, with a diameter ranging from 0.1 to 1.0 mm and a length ranging from 20 to 120 mm. The electrode wires 2 are made of high-temperature resistant conductive material (such as molybdenum wire or tungsten wire) and are in close contact with both ends of the substrate standard 1 to introduce the detection current. The insulating shield 3 is made of high-temperature resistant insulating material (such as alumina, silicon dioxide, or zirconium oxide) and wraps around both ends of the substrate standard 1 and the outside of the electrode wires 2. The middle portion of the substrate standard 1 is exposed outside the insulating shield 3, with an exposed length of 10 to 100 mm.
[0057] The substrate standard unit 5 is installed in the coating working area of the magnetron sputtering equipment 8 through an insulating fixing bracket. The axial direction of the exposed part of the substrate standard 1 is set parallel to the axial direction of the pilot wire sample 9 to ensure that the coating growth conditions on the surfaces of the two are consistent.
[0058] The resistance meter 6 is located outside the magnetron sputtering equipment 8, with a range of 0.1mΩ to 10Ω and a resolution of ±0.1%. It is connected to the electrode wire 2 of the substrate standard unit 5 via a shielded cable 4.
[0059] The equipment control system 7 is connected to the control terminal signals of the resistance meter 6 and the magnetron sputtering equipment 8 respectively. It is used to collect and analyze the detection data of the resistance meter 6 in real time, calculate the coating thickness and the pilot wire volume fraction, and transmit feedback control signals to the magnetron sputtering equipment 8.
[0060] The present invention discloses a monitoring method for a SiC fiber-reinforced metal matrix composite precursor fiber volume fraction monitoring system, as detailed below:
[0061] Step 1: Installation and Debugging
[0062] Place the substrate standard sample unit 5 within the coating working area of the magnetron sputtering equipment 8, near the pilot wire sample 9. Connect the resistance meter 6 to the electrode wire 2 of the substrate standard sample unit 5 via the shielded cable 4. Connect the equipment control system 7 to the control terminals of the resistance meter 6 and the magnetron sputtering equipment 8 respectively. Turn on the resistance meter 6, confirm that the detection signal is normal, and confirm that the entire monitoring system is working properly.
[0063] Step 2: Measure the initial resistance
[0064] The initial resistance value of the substrate standard 1 was measured using ohmmeter 6. .
[0065] Step 3: Measure the resistance and calculate the coating thickness after coating.
[0066] After the magnetron sputtering equipment 8 is operating normally, a titanium alloy substrate coating is deposited on the surface of the substrate standard sample 1. As the coating thickness of the substrate standard sample 1 increases, its resistance gradually decreases. The resistance value of the substrate standard sample 1 after coating is measured in real time by the resistance meter 6. Using the initial resistance value Resistance value after coating The coating thickness of the substrate titanium alloy was calculated based on parameters such as resistivity ρ and deposition length L. .
[0067] Among them, the coating thickness of the substrate standard sample is calculated. Specifically:
[0068] (1) When the substrate sample 1 is a cylindrical wire, the coating thickness is derived from the inverse relationship between the resistance and the cross-sectional area before and after coating:
[0069]
[0070] in, The initial diameter of the matrix standard sample;
[0071] (2) When the substrate standard sample 1 is foil, let its initial width be... Initial thickness is The coating thickness ,Right now:
[0072]
[0073] The coating thickness is obtained by solving the equation and taking its positive root. .
[0074] Step 4: Correction and Volume Fraction Calculation
[0075] Based on the difference in installation positions between substrate standard unit 5 and pilot wire sample 9, the coating thickness was adjusted. Make corrections to obtain the actual coating thickness of the pilot wire. Then, based on the actual coating thickness and SiC fiber diameter The actual volume fraction of the precursor fiber was calculated. ;
[0076] Step 41: Assess the thickness of the coating. Make corrections to obtain the actual coating thickness of the pilot wire. Specifically:
[0077] Based on the spatial positional difference between the substrate standard sample 5 and the precursor wire sample 9 within the magnetron sputtering equipment 8, the coating thickness correction coefficient k is determined, and the coating thickness of the substrate standard sample is adjusted accordingly. Multiply by the correction factor The corrected thickness of the precursor wire substrate coating was obtained. The corrected relation is: .
[0078] Step 42: Calculate the volume fraction of the precursor fiber. Specifically:
[0079] According to the coating thickness With SiC fiber diameter Calculate the total cross-sectional area of the precursor filament and the proportion of the SiC fiber cross-sectional area, i.e.:
[0080]
[0081] in, The diameter of the SiC fiber. The actual coating thickness of the precursor wire is obtained after correction.
[0082] Step 5: Closed-loop feedback control
[0083] The precursor fiber volume fraction measured in real time The data is integrated into the data acquisition and analysis module and the magnetron sputtering equipment control system, automatically adjusting parameters such as sputtering power, sputtering gas pressure, substrate rotation speed, and sputtering time to achieve closed-loop process control.
[0084] III. Typical Examples
[0085] Following the steps described above, a SiC fiber-reinforced titanium alloy composite precursor wire was prepared using a magnetron sputtering apparatus. The substrate standard sample, made of the same material as the titanium alloy substrate coating, was assembled near the precursor wire sample. After activating the resistance meter monitoring system and confirming its proper functioning, the initial resistance value of the substrate standard sample was measured. Start the magnetron sputtering equipment to begin coating, and record the resistivity value after coating in real time. Using the initial resistance value R0 and the resistance value after coating... Calculate the coating thickness of the substrate titanium alloy based on its resistivity ρ and standard sample deposition length L. The thickness of the precursor wire substrate coating was obtained by correcting for the spatial positional differences between the substrate standard and the precursor wire sample. Through the diameter of SiC fibers Calculate the volume fraction of the precursor fiber The volume fraction data is input into the equipment control system, which automatically adjusts process parameters such as sputtering power until the precursor wire volume fraction reaches the target value, thus completing the preparation process.
[0086] In summary, this invention proposes a method and apparatus for online monitoring of the volume fraction of precursor wires in the preparation of SiC fiber-reinforced metal matrix composites. The core innovation lies in utilizing the resistance method to monitor the resistance change of the substrate standard sample in real time during magnetron sputtering coating. The film growth thickness is inverted through the resistance value, thereby estimating the change in precursor wire diameter and calculating the volume fraction. The entire monitoring process requires no offline sampling. The system has a simple structure, requiring only basic components such as the substrate standard sample, electrode wires, insulating shielding sleeve, resistance meter, and equipment control system. The apparatus is simple, low-cost, and not strictly limited by the internal space and ambient temperature of the magnetron sputtering equipment, making implementation convenient and flexible. The method has a clear flow, covering the complete process of installation and commissioning, initial resistance measurement, real-time monitoring of the coating process, correction for spatial position differences, volume fraction calculation, and closed-loop feedback control. It can achieve online in-situ monitoring of the precursor wire volume fraction and automatic adjustment of process parameters. This invention effectively overcomes the shortcomings of existing conventional testing equipment, such as the inability to monitor in situ, leading to delays in process adjustment, and the complex calibration of high-precision optical instruments, their sensitivity to surface finish, and their difficulty in online application. It is applicable to the magnetron sputtering preparation process of precursor wires for various metal matrix composites, such as SiC fiber-reinforced titanium and copper matrix composites, providing a new approach for process monitoring and fabrication of high-performance metal matrix composite structural parts. It has broad application prospects in aerospace, aviation, and deep-sea fields.
[0087] Those skilled in the art will understand that the above description is merely a preferred embodiment of the present invention, and the features described in the various embodiments of this disclosure can be combined or combined in various ways, even if such combinations or combinations are not explicitly described in this disclosure. This is not intended to limit the present invention. Although the present invention has been described in detail with reference to the foregoing embodiments, those skilled in the art can still modify the technical solutions described in the foregoing embodiments or make equivalent substitutions for some of the technical features. Any modifications, equivalent substitutions, improvements, etc., made within the spirit and principles of the present invention should be included within the protection scope of the present invention.
Claims
1. A system for monitoring the volume fraction of precursor fibers in SiC fiber-reinforced metal matrix composites, characterized in that, include: The substrate standard unit (5) is set in the coating working area of the magnetron sputtering equipment (8) and is located near the pilot wire sample (9); A resistance meter (6) is installed outside the magnetron sputtering equipment (8) and is electrically connected to the substrate standard unit (5) via a shielded cable (4) for real-time measurement of the resistance value of the substrate standard unit (5). The equipment control system (7) is connected to the control terminal signals of the resistance meter (6) and the magnetron sputtering equipment (8) respectively. It is used to collect and analyze the detection data of the resistance meter (6), calculate the coating thickness and the volume fraction of the precursor wire, and transmit feedback control signals to the magnetron sputtering equipment (8).
2. The SiC fiber-reinforced metal matrix composite precursor fiber volume fraction monitoring system according to claim 1, characterized in that, The substrate standard unit (5) includes: substrate standard (1), electrode wire (2) and insulating shield (3); The substrate standard (1) is a filamentous or foil-shaped conductor, the material of which is the same as that of the substrate coating material of the magnetron sputtering, with a diameter of 0.1 to 1.0 mm and a length of 20 to 120 mm; The electrode wire (2) is made of molybdenum wire or tungsten wire, and is made of high temperature resistant conductive material. It is in close contact with both ends of the substrate standard (1). The insulating shield (3) is made of aluminum oxide, silicon dioxide or zirconium oxide and is made of high temperature resistant insulating material. It is wrapped around both ends of the substrate standard (1) and the outside of the electrode wire (2). The middle part of the substrate standard (1) is exposed outside the insulating shield (3) and the exposed length is 10 to 100 mm.
3. The SiC fiber-reinforced metal matrix composite precursor fiber volume fraction monitoring system according to claim 2, characterized in that, The shielded cable (4) passes through the magnetron sputtering equipment (8) and is then welded to the electrode wire (2); The portion of the shielded cable (4) located inside the magnetron sputtering equipment (8) is fitted with a metal shielding tube, which is grounded and has an inner diameter larger than the outer diameter of the shielded cable (4). The straight-line distance between the substrate standard unit (5) and the precursor wire sample (9) is 10-50 mm, and the axial direction of the exposed part of the substrate standard (1) is set parallel to the axial direction of the precursor wire sample (9) so that the coating growth conditions on the surfaces of the two are consistent. The substrate standard unit (5) is installed in the coating working area of the magnetron sputtering equipment (8) by means of an insulating fixing bracket. The insulating fixing bracket is made of alumina ceramic and is used to isolate the electrical connection between the substrate standard unit (5) and the cavity of the magnetron sputtering equipment (8).
4. The SiC fiber-reinforced metal matrix composite precursor fiber volume fraction monitoring system according to claim 1, characterized in that, The range of the resistance meter (6) is 0.1mΩ to 10Ω, and the resolution is ±0.1%.
5. A method for monitoring the volume fraction of precursor fibers in SiC fiber-reinforced metal matrix composites according to any one of claims 1-4, characterized in that, Includes the following steps: Step S1: The substrate standard unit (5) is placed in the coating working area of the magnetron sputtering equipment (8) and located near the pilot wire sample (9). The resistance meter (6) is connected to the electrode wire (2) of the substrate standard unit (5) through the shielded cable (4). The equipment control system (7) is connected to the control terminal signal of the resistance meter (6) and the magnetron sputtering equipment (8) respectively. The resistance meter (6) is turned on to confirm that the detection is normal and the entire system is working normally. Step S2: Measure the initial resistance value of the substrate standard unit (5) using a ohmmeter (6). ; Step S3: During the magnetron sputtering coating process, the resistance value of the substrate standard unit (5) after coating is measured in real time using a resistance meter (6). And based on the initial resistance value Resistance value after coating Resistivity of the substrate coating material And the deposition length L of the standard sample, to calculate the coating thickness of the substrate standard sample. ; Step S4: Based on the difference in installation position between the substrate standard unit (5) and the pilot wire sample (9), adjust the coating thickness. Make corrections to obtain the actual coating thickness of the pilot wire. Then, based on the actual coating thickness... and SiC fiber diameter The actual volume fraction of the precursor fiber was calculated. ; Step S5: Feed back the actual precursor wire volume fraction to the equipment control system (7), and the equipment control system (7) automatically adjusts the process parameters of the magnetron sputtering equipment (8) to achieve closed-loop control.
6. The method for monitoring the volume fraction of precursor fibers in a SiC fiber-reinforced metal matrix composite material according to claim 5, characterized in that, In step S3, the coating thickness of the substrate standard sample is calculated. Specifically: (1) When the substrate standard sample (1) is a cylindrical wire, the coating thickness is derived from the inverse relationship between the resistance and the cross-sectional area before and after coating: ; in, The initial diameter of the matrix standard sample; (2) When the substrate standard (1) is foil, let its initial width be Initial thickness is The coating thickness ,Right now: ; The coating thickness is obtained by solving the equation and taking its positive root. .
7. The method for monitoring the volume fraction of precursor fibers in a SiC fiber-reinforced metal matrix composite material according to claim 5, characterized in that, In step S4, the thickness of the coating is... Make corrections to obtain the actual coating thickness of the pilot wire. Specifically: Based on the spatial position difference between the substrate standard unit (5) and the precursor wire sample (9) within the magnetron sputtering equipment (8), the coating thickness correction coefficient k is determined, and the coating thickness of the substrate standard is adjusted accordingly. Multiply by the correction factor The corrected thickness of the precursor wire substrate coating was obtained. The corrected relation is: .
8. The method for monitoring the volume fraction of precursor fibers in a SiC fiber-reinforced metal matrix composite material according to claim 5, characterized in that, In step S4, the volume fraction of the precursor fiber is calculated. Specifically: According to the coating thickness With SiC fiber diameter Calculate the total cross-sectional area of the precursor filament and the proportion of the SiC fiber cross-sectional area, i.e.: ; in, The diameter of the SiC fiber. The actual coating thickness of the precursor wire is obtained after correction.
9. The method for monitoring the volume fraction of precursor fibers in a SiC fiber-reinforced metal matrix composite material according to claim 5, characterized in that, In step S5, the process parameters include: sputtering power, sputtering gas pressure, substrate rotation speed, and sputtering time.