A test device for integrated circuit conducted emission voltage in wide temperature range

Abstract

This invention relates to a testing device for conducted emission voltage of integrated circuits under a wide temperature range. The device comprises a power supply module, a temperature-controlled test chamber, a voltage test probe, a data acquisition module, and a control and data processing module. This wide-temperature-range conducted emission voltage testing device enables conducted emission testing of integrated circuits in a controlled temperature environment. By calibrating the conduction characteristics of the voltage test probe under different temperature conditions, temperature- and frequency-related probe calibration parameters are obtained. During actual testing, the corresponding probe calibration parameters are called or calculated based on the actual test temperature to compensate and correct the acquired conducted emission voltage data, thereby reducing the influence of the voltage test probe's own temperature response on the test results and improving the accuracy and comparability of integrated circuit conducted emission voltage testing under a wide temperature range.

Description

Technical Field

[0001] This invention relates to the field of integrated circuits, and more particularly to a test apparatus for the conducted emission voltage of integrated circuits over a wide temperature range. Background Technology

[0002] As integrated circuits (ICs) evolve towards higher integration, higher operating frequencies, and higher power densities, electromagnetic noise generated by internal clock circuits, switching power supplies, digital interfaces, and driver circuits is becoming increasingly prominent. This noise can be conducted outwards through power pins, signal pins, and grounding networks, further affecting the electromagnetic compatibility (EMC) performance of circuit boards and the entire system. Accurately obtaining the conducted emission characteristics of ICs is crucial for evaluating the EMC performance of chip-level products, analyzing electromagnetic noise propagation patterns, and guiding board-level and system-level EMC design. Simultaneously, the application environments of ICs in aerospace, automotive electronics, and high-reliability electronic equipment are becoming increasingly complex, with their operating temperature ranges continuously expanding. Temperature variations affect the internal device parameters, switching speed, operating frequency, and power network characteristics of ICs, leading to changes in the amplitude, frequency, and spectral distribution of conducted emission signals. Furthermore, in wide-temperature environments, the impedance matching network, RF connection structure, and signal transmission path in the test setup may also be affected by temperature, altering the transmission characteristics of the test link itself. Therefore, conducted emission test results obtained under wide-temperature conditions not only include the temperature effects of the IC under test but may also be compounded by measurement errors caused by temperature drift in the test setup.

[0003] Current conducted emission voltage testing of integrated circuits is mainly based on the 150 Ω direct coupling method specified in IEC 61967-4, which couples the RF voltage at the IC pins or test nodes to a spectrum analyzer or electromagnetic interference receiver via a test probe. Existing test methods and apparatus are typically designed for ambient temperature environments, assuming that the transfer characteristics of the test probe, impedance matching network, and signal transmission link remain stable during testing. However, there is a lack of test apparatus capable of supporting conducted emission testing of integrated circuits under wide temperature conditions. The impact of temperature variations in the voltage test probe's transfer characteristics on the measurement results is not fully considered. Furthermore, there is a lack of temperature-dependent calibration and compensation methods for voltage test probes, affecting the accuracy and comparability of conducted emission test results under different temperature conditions. Summary of the Invention

[0004] The purpose of this invention is to overcome the shortcomings of the prior art and provide a test device for the conducted emission voltage of integrated circuits suitable for a wide temperature range, thus solving the deficiencies of the prior art.

[0005] The objective of this invention is achieved through the following technical solution: a test device for the conducted emission voltage of integrated circuits under a wide temperature range, the device comprising a power supply module, a temperature control test chamber, a voltage test probe, a data acquisition module, and a control and data processing module;

[0006] The power supply module is used to provide the power supply voltage and operating current required for the normal operation of the device under test;

[0007] The temperature-controlled test chamber is used to provide an adjustable and stable temperature environment for the device under test.

[0008] The voltage test probe is used to acquire the conducted transmission voltage signal at the pin under test of the device under test and transmit the radio frequency voltage signal at the test node of the device under test to the back-end data acquisition module. Before the formal test, the transmission characteristics of the voltage test probe are calibrated under different temperature conditions by a calibration device, and the obtained temperature-related calibration parameters are stored in the control and data processing module for compensation of subsequent actual test data.

[0009] The data acquisition module is used to receive the radio frequency voltage signal output by the voltage test probe and to complete the acquisition of conducted transmission voltage data of the device under test.

[0010] The control and data processing module is used to control the test equipment, record the test temperature, and store the test data. Based on the actual temperature information fed back by the temperature control test chamber, it determines the probe calibration parameters corresponding to the current test conditions, compensates and corrects the original conducted emission voltage data obtained by the data acquisition module, and finally outputs the test results.

[0011] The calibration device includes a temperature-controlled test chamber, a voltage test probe, a calibration board, and a vector network analyzer; the voltage test probe and calibration board are located inside the temperature-controlled test chamber, and the vector network analyzer is located outside the temperature-controlled test chamber and is connected to the calibration structure inside the chamber via an RF cable;

[0012] The calibration board includes a through calibration board and an open calibration board. The through calibration board is used to obtain the two-port transmission characteristics of the calibration fixture, and the open calibration board is used to obtain the reflection characteristics of the calibration structure. It is connected to the voltage test probe to be calibrated to complete the overall network parameter measurement. By de-embedding the influence of the calibration fixture, the transmission characteristics of the voltage test probe itself are obtained.

[0013] The calibration process of the calibration device includes:

[0014] S1. Perform two-port calibration on the vector network analyzer to determine the reference surface for subsequent S-parameter measurements and set the calibration temperature;

[0015] S2. Measure the 150Ω through calibration plate to obtain the two-port scattering parameter matrix, measure the 150Ω open-circuit calibration plate to obtain the open-circuit reflection coefficient, and then obtain the two-port scattering parameters of the calibration transition network at the current temperature.

[0016] S3, the overall network consisting of the measurement calibration board and the voltage test probe, is used to obtain the characteristics of the voltage test probe itself by embedding;

[0017] S4. Save the current temperature calibration data and complete the calibration of all preset temperature points to form the frequency-temperature calibration parameter set of the voltage test probe.

[0018] S2 specifically includes:

[0019] S201, at temperature Under the given conditions, the two-port scattering parameters of a 150Ω through-type calibration plate were measured using a vector network analyzer to characterize the transmission characteristics of the calibration fixture and corresponding transition structure at the current temperature, yielding the desired results. ,in, Indicates at frequency f and calibration temperature Two-port scattering parameter matrix of a 150 Ω through-hole calibration plate under the given conditions. and These represent the reflection coefficients of port 1 and port 2, respectively. and These represent the forward transmission coefficient from port 1 to port 2 and the reverse transmission coefficient from port 2 to port 1, respectively.

[0020] S202, Maintain temperature With the 150 Ω open-circuit calibration board connected to the vector network analyzer, the reflection coefficient at port 1 is measured. And it is recorded as the reflection coefficient of the open-circuit calibration plate. Combined with the two-port parameters of the through calibration board obtained in step S201 and the obtained open-circuit reflection coefficient Based on the corresponding structural relationship between the through calibration board and the open-circuit calibration board, the two-port scattering parameters of the calibration transition network under the current temperature conditions are obtained. .

[0021] S3 specifically includes:

[0022] S301. Connect the voltage test probe to the open-circuit calibration board, and use a vector network analyzer to measure the two-port scattering parameters of the overall network composed of the two. ;

[0023] S302, calibrate the two-port scattering parameters of the transition network. Convert to transmission matrix The overall network two-port scattering parameters Convert to transmission matrix Then the transmission matrix of the voltage test probe itself is Thus, the scattering parameters of the voltage test probe are obtained as follows: ,in, Indicates the voltage test probe at temperature The transmission matrix below, T2S[·] represents the scattering parameters of the voltage test probe, and T2S[·] represents the matrix transformation operation that converts the transmission matrix into a scattering parameter matrix; thus, the voltage transfer coefficient of the voltage test probe at the current temperature is obtained. The corresponding amplitude calibration parameters are ,in, Indicates at frequency f and calibration temperature Voltage transfer coefficient of voltage test probe under certain conditions This indicates the voltage at the probe's radio frequency output terminal. This indicates the input voltage on the side where the probe is connected to the node under test of the device.

[0024] The compensation and correction of the raw conducted emission voltage data obtained by the data acquisition module includes:

[0025] A1. Set the target test temperature, power on the device under test and enter a stable working state, the temperature control test chamber reaches and maintains the target temperature, and collect the conducted emission voltage of the device under test;

[0026] A2. Read the actual test temperature and determine the calibration parameters, and compensate and correct the original test data;

[0027] A3. Obtain and store the test results. If other temperature point tests are to be carried out, repeat steps A1 and A2. After all preset test temperatures are completed, the conducted emission voltage test results of the device under test under wide temperature range conditions are generated.

[0028] A2 specifically includes the following:

[0029] A201. The control and data processing module synchronously reads the current actual test temperature T and compares it with the calibration temperature point in the frequency-temperature calibration parameter set of the voltage test probe. When the actual test temperature T matches a certain calibration temperature point... When the values ​​are consistent or within the specified allowable range, directly call the probe calibration parameters corresponding to that temperature point; when the actual test temperature T is located at two adjacent calibration temperature points... and When the temperature is between these points, interpolation is performed based on the calibration data of adjacent temperature points to obtain the corresponding calibration parameters at the current actual temperature.

[0030] A202, the control and data processing module corrects the original conducted emission voltage obtained by the data acquisition module based on the probe calibration parameters corresponding to the current actual temperature. When using the voltage transfer coefficient... During compensation, the corrected conducted emission voltage of the device under test is: When the data acquisition results are expressed using logarithmic amplitude values, the amplitude calibration parameter is used. Directly correct and obtain ,in, This represents the original conducted emission voltage amplitude obtained by the data acquisition module. This represents the amplitude of the conducted emission voltage of the device under test obtained after compensating for the transmission characteristics of the probe.

[0031] A1 specifically includes:

[0032] A101. According to the wide temperature range conducted emission test requirements of the device under test, set the current target test temperature T in the control and data processing module, and control the temperature control test chamber to run to the corresponding temperature state.

[0033] A102. The power supply module provides the specified operating voltage and current to the device under test, enabling the device under test to enter the preset operating mode and maintain stable operation. During the test, the power supply status and operating conditions of the device under test are kept consistent.

[0034] A103. Control the temperature control test chamber to gradually reach the target test temperature T, and continuously read the actual temperature inside the chamber. When the actual temperature reaches the preset temperature condition, enter the conducted emission voltage test stage.

[0035] A104. The data acquisition module acquires the conducted emission voltage of the device under test at the current temperature via the voltage test probe within the preset test frequency range.

[0036] The present invention has the following advantages:

[0037] 1. By placing the DUT and voltage test probe inside the temperature-controlled test chamber, and having the power supply module, temperature-controlled test chamber, data acquisition module, and control and data processing module work together, the DUT can maintain stable operation under preset temperature conditions and complete the conducted emission voltage acquisition after the temperature reaches a stable state. This solves the problem that existing test devices are mainly suitable for normal temperature environments and are difficult to conduct conducted emission tests under wide temperature conditions.

[0038] 2. By calibrating the voltage test probe at multiple preset temperature points, and using the through calibration board, open-circuit calibration board and de-embedding method to obtain the probe's own transmission characteristics, a frequency-temperature calibration parameter set is established, so that the probe's own response changes under different temperature conditions can be independently characterized, avoiding the direct use of the probe's temperature response as part of the DUT's conducted emission changes.

[0039] 3. During the formal testing process, based on the actual temperature fed back by the temperature control test chamber, the calibration parameters of the corresponding temperature point are directly called, or the calibration parameters corresponding to the current temperature are obtained by interpolation of calibration data of adjacent temperature points, and the original conducted emission voltage data are compensated and corrected, thereby reducing the temperature-related measurement deviation caused by using a single room temperature calibration parameter, and improving the accuracy, consistency and comparability of the conducted emission voltage test results of integrated circuits under different temperature conditions. Attached Figure Description

[0040] Figure 1 This is a schematic diagram of the structure of the device of the present invention.

[0041] Figure 2 This is a schematic diagram of the voltage test probe and impedance matching network.

[0042] Figure 3 This is a schematic diagram of the calibration device.

[0043] Figure 4 This is a schematic diagram of the calibration process.

[0044] Figure 5 The flowchart is for revision. Detailed Implementation

[0045] To make the objectives, technical solutions, and advantages of the embodiments of this application clearer, the technical solutions of the embodiments of this application will be clearly and completely described below with reference to the accompanying drawings. Obviously, the described embodiments are only a part of the embodiments of this application, and not all of the embodiments. The components of the embodiments of this application described and shown in the accompanying drawings can generally be arranged and designed in various different configurations. Therefore, the detailed description of the embodiments of this application provided below with reference to the accompanying drawings is not intended to limit the scope of protection of the claimed application, but merely represents selected embodiments of this application. All other embodiments obtained by those skilled in the art based on the embodiments of this application without inventive effort are within the scope of protection of this application. The present invention will be further described below with reference to the accompanying drawings.

[0046] like Figure 1As shown, this invention specifically relates to a testing device for conducted emission voltage of integrated circuits under a wide temperature range. By constructing a wide-temperature testing environment, establishing a temperature-dependent calibration method for the voltage test probe, and performing temperature-dependent compensation for test data, the device achieves accurate acquisition of conducted emission voltage of integrated circuits under different temperature conditions. Specifically, the wide-temperature-range conducted emission voltage testing device consists of a power supply module, a temperature-controlled test chamber, a voltage test probe, a data acquisition module, and a control and data processing module. This allows integrated circuits to undergo conducted emission testing in a controllable temperature environment. By calibrating the transfer characteristics of the voltage test probe under different temperature conditions, probe calibration parameters related to temperature and frequency are obtained. During actual testing, the corresponding probe calibration parameters are called or calculated based on the actual test temperature to compensate and correct the acquired conducted emission voltage data, thereby reducing the influence of the voltage test probe's own temperature response on the test results and improving the accuracy and comparability of integrated circuit conducted emission voltage testing under a wide temperature range.

[0047] The power supply module provides the necessary voltage and current for the DUT (Device Under Test) to operate normally, ensuring that the DUT maintains its preset operating state under different temperature conditions. The power supply module connects to the test circuit board inside the temperature-controlled test chamber via its electrical connection interface, and the DUT is mounted on the test circuit board. Depending on the operating requirements of different DUTs, the power supply module can use a DC regulated power supply or other equipment with corresponding power supply capabilities. The power supply module can also connect to the control and data processing module, which handles power supply parameter settings, operating status recording, and test process control.

[0048] The temperature-controlled test chamber provides an adjustable and stable temperature environment for the DUT (Distributed Under Test), enabling conducted emission voltage testing of integrated circuits under different temperature conditions. During testing, the test circuit board with the DUT and the voltage test probe are housed inside the temperature-controlled test chamber. The chamber has feedthrough interfaces for power cables and RF connection cables, ensuring electrical connection between the test object inside the chamber and the external power supply module and data acquisition module while maintaining a stable internal temperature environment. The temperature-controlled test chamber connects to the control and data processing module, receiving temperature control commands based on the preset test temperature and feeding back the actual internal temperature to the control and data processing module. During testing, conducted emission voltage is acquired after each target temperature point reaches the preset stability condition, ensuring a clear correspondence between the test data and the actual test temperature.

[0049] A voltage test probe is used to acquire the conducted emission voltage signal at the pin under test of the DUT. The voltage test probe employs a 150 Ω direct coupling test principle, with an internal impedance matching network to form a test impedance that meets the requirements for conducted emission voltage testing of integrated circuits. It then transmits the RF voltage signal at the DUT test node to the backend data acquisition module. During testing, the voltage test probe is placed inside a temperature-controlled test chamber, with its test end connected to the pin under test on the DUT, and its output end connected to the data acquisition module via an RF cable. Since the voltage test probe and the DUT are both exposed to the high and low temperature environment of the temperature-controlled test chamber, the electrical characteristics of its internal impedance matching network and RF transmission path may change with temperature, causing temperature-dependent variations in the probe's voltage transfer characteristics. Therefore, this invention calibrates the voltage test probe's transfer characteristics under different temperature conditions before formal testing and stores the obtained temperature-dependent calibration parameters in the control and data processing module for subsequent compensation of actual test data.

[0050] The data acquisition module receives the radio frequency voltage signal output by the voltage test probe and acquires the conducted transmit voltage data of the DUT. The data acquisition module can be a spectrum analyzer, receiver, or other equipment with corresponding radio frequency signal measurement capabilities. The radio frequency input terminal of the data acquisition module is connected to the output terminal of the voltage test probe via an radio frequency connection cable. During the test, the data acquisition module acquires the conducted transmit voltage signal according to the preset test frequency range, frequency resolution, detection method, and other measurement parameters, and transmits the obtained raw measurement data to the control and data processing module.

[0051] The control and data processing module is responsible for controlling the test equipment, recording test temperatures, storing test data, managing calibration parameters, performing temperature-related compensation, and outputting test results. This module connects to the power supply module, the temperature-controlled test chamber, and the data acquisition module, controlling each module to work collaboratively according to a preset test program. During testing, the control and data processing module sets the target temperature of the temperature-controlled test chamber, acquires and records the actual test temperature, and simultaneously controls the data acquisition module to acquire conducted emission voltage data under the corresponding temperature conditions. The control and data processing module pre-stores the transmission characteristic calibration parameters obtained by the voltage test probe under different temperature and frequency conditions. During formal testing, the control and data processing module determines the probe calibration parameters corresponding to the current test conditions based on the actual temperature information fed back from the temperature-controlled test chamber and corrects the raw conducted emission voltage data obtained by the data acquisition module.

[0052] Furthermore, in order to reduce the impact of changes in the characteristics of the voltage test probe itself on the conducted emission voltage measurement results under wide temperature conditions, the voltage test probe was calibrated for temperature-related parameters before the formal test. The probe calibration parameters were obtained under multiple preset temperature conditions, and the correspondence between temperature, frequency and calibration parameters was established as the basis for subsequent test data compensation.

[0053] The voltage test probe used in this invention is based on the 150 Ω direct coupling test principle specified in IEC 61967-4, and its equivalent circuit is as follows. Figure 2 As shown, the voltage test probe has an internal 150 Ω impedance matching network. Its input is connected to the pin under test (DUT), and its output is connected to a 50 Ω data acquisition device. Since the electrical characteristics of the impedance matching network and the probe's internal RF transmission structure may change with temperature, it is necessary to obtain the probe's actual calibration parameters under different temperature conditions.

[0054] like Figure 3 As shown, the calibration device mainly includes a temperature-controlled test chamber, a voltage test probe, a calibration board, and a vector network analyzer. The voltage test probe and calibration board are housed inside the temperature-controlled test chamber, while the vector network analyzer is located outside the chamber and connected to the calibration structure inside via an RF cable. The calibration board includes a through-hole calibration board and an open-circuit calibration board. The through-hole calibration board is used to acquire the two-port transmission characteristics of the calibration fixture, while the open-circuit calibration board is used to acquire the reflection characteristics of the calibration structure and connects with the voltage test probe to be calibrated to complete the overall network parameter measurement. By de-embedding the influence of the calibration fixture, the transmission characteristics of the voltage test probe itself can be obtained. This invention does not limit the specific structure of the through-hole and open-circuit calibration boards; existing calibration structures that meet the calibration requirements of a 150 Ω voltage test probe can be used. The focus is on extending probe calibration to different temperature conditions and establishing calibration parameters for the voltage test probe that vary with temperature.

[0055] like Figure 4 As shown, the procedure steps for temperature-related calibration of the voltage test probe are as follows:

[0056] Step 1: Calibrate the vector network analyzer;

[0057] First, connect the vector network analyzer and calibration test cable, and perform dual-port calibration on the vector network analyzer to determine the reference plane for subsequent S-parameter measurements.

[0058] Step 2: Set the calibration temperature;

[0059] Multiple calibration temperature points are set according to the wide temperature range test range: .in, This represents the i-th calibration temperature point, and N represents the total number of calibration temperature points. The temperature control chamber is controlled to reach the currently set temperature. And read the actual temperature inside the box in real time. Once the actual temperature meets the preset stability conditions, probe calibration at the current temperature point begins.

[0060] For example, the following temperature stability criterion can be used: And the above conditions are within the preset stabilization time. Internally, it is continuously satisfied. Among them, For the allowable temperature deviation range, This is the preset temperature stabilization time.

[0061] Step 3: Measure the 150 Ω through calibration plate;

[0062] At temperature Under the given conditions, the two-port scattering parameters of a 150 Ω through-type calibration plate were measured using a vector network analyzer to characterize the transmission characteristics of the calibration fixture and corresponding transition structure at the current temperature. The results are as follows: ,in, Indicates at frequency f and calibration temperature Two-port scattering parameter matrix of a 150 Ω through-hole calibration plate under the given conditions. and These represent the reflection coefficients of port 1 and port 2, respectively. and These represent the forward transmission coefficient from port 1 to port 2 and the reverse transmission coefficient from port 2 to port 1, respectively.

[0063] Step 4: Measure the 150 Ω open-circuit calibration board;

[0064] Maintain temperature With the 150 Ω open-circuit calibration board connected to the vector network analyzer, its port 1 reflection coefficient was measured. And it is recorded as the reflection coefficient of the open-circuit calibration plate. Combined with the two-port parameters of the through calibration board obtained in step 3 and the open-circuit reflection coefficient obtained in this step Based on the corresponding structural relationship between the through calibration board and the open-circuit calibration board, the two-port scattering parameters of the calibration transition network under the current temperature conditions are obtained. .

[0065] Step 5: Measure the overall network consisting of the calibration board and the voltage test probe;

[0066] Connect the voltage test probe to the open-circuit calibration board, and use a vector network analyzer to measure the two-port scattering parameters of the overall network composed of the two: The measurement results include both the calibration transition network and the transmission response of the voltage test probe itself.

[0067] Step 6: Obtain the inherent characteristics of the voltage test probe by removing the embedded part;

[0068] De-embedding calculations are performed based on the calibration fixture parameters and the overall network measurement parameters. The two-port scattering parameters of the calibration transition network obtained in step 4 are then used. Convert to transmission matrix The overall network two-port scattering parameters obtained in step 5 are used. Convert to transmission matrix Then the transmission matrix of the voltage test probe itself is ,in, For voltage test probe at temperature The transmission matrix below.

[0069] This allows us to obtain the scattering parameters of the voltage test probe itself: ,in, T2S[·] represents the scattering parameters of the voltage test probe, and T2S[·] represents the matrix transformation operation that converts the transmission matrix into the scattering parameter matrix.

[0070] Furthermore, the voltage transfer coefficient of the probe under the current temperature conditions was obtained: ,in, Indicates at frequency f and calibration temperature Voltage transfer coefficient of voltage test probe under certain conditions This indicates the voltage at the probe's radio frequency output terminal. This indicates the input reference plane of the probe, i.e., the input voltage on the side connected to the node under test (DUT).

[0071] The corresponding amplitude calibration parameters are: ,in, Indicates at frequency f and calibration temperature Voltage transfer coefficient of voltage test probe under certain conditions This indicates the voltage at the probe's radio frequency output terminal. This indicates the input reference plane of the probe, i.e., the input voltage on the side connected to the node under test (DUT).

[0072] The corresponding amplitude calibration parameters are: .

[0073] Step 7: Save the current temperature calibration data;

[0074] Current temperature The probe scattering parameters, voltage transfer coefficient, and amplitude calibration parameters obtained are associated and stored with the corresponding test frequency.

[0075] Step 8: Complete multi-temperature point calibration;

[0076] Determine if all preset temperature points have been reached. If not, switch to the next temperature. After the temperature stabilizes, repeat steps 3 to 7; after all temperature points are completed, a frequency-temperature calibration parameter set for the voltage test probe is formed: ,in, This represents the j-th calibration frequency point. This represents the i-th calibration temperature point.

[0077] The established temperature-related calibration parameter set is stored in the control and data processing module and is called up according to the actual test temperature and frequency when the wide-temperature-range conducted emission voltage test is carried out, in order to compensate for the original test results.

[0078] After completing the temperature-related calibration of the voltage test probe and establishing the frequency-temperature calibration parameter set, integrated circuit conducted emission voltage testing under wide temperature range conditions can be carried out. During the test, the control and data processing module calls or calculates the corresponding probe calibration parameters based on the actual temperature fed back by the temperature-controlled test chamber, and compensates and corrects the original test results obtained by the data acquisition module.

[0079] like Figure 5 As shown, the specific correction process is as follows:

[0080] Step 1: Set the target test temperature;

[0081] According to the DUT wide temperature range conducted emission test requirements, the current target test temperature T is set in the control and data processing module, and the temperature control test chamber is controlled to run to the corresponding temperature state.

[0082] Step 2: Power on the DUT and enter a temperature-stable operating state;

[0083] The power supply module provides the specified operating voltage and current to the DUT, enabling the DUT to enter the preset operating mode and maintain stable operation. During the test, the power supply status and operating conditions of the DUT are kept consistent.

[0084] Step 3: The temperature control chamber reaches and maintains the target temperature;

[0085] The temperature control chamber is gradually brought up to the target test temperature T, and the actual temperature inside the chamber is continuously read. Once the actual temperature reaches the preset temperature stabilization condition, the conducted emission voltage test phase begins.

[0086] Step 4: Acquire the conducted emission voltage of the DUT;

[0087] The data acquisition module acquires the conducted emission voltage of the DUT measured by the voltage test probe at the current temperature within a preset test frequency range. Where f represents the test frequency, and T represents the actual temperature fed back by the temperature control chamber during the test.

[0088] Step 5: Read the actual test temperature and determine the calibration parameters;

[0089] The control and data processing module synchronously reads the current actual test temperature T and compares it with the calibration temperature points in the established frequency-temperature calibration parameter set.

[0090] When the actual test temperature T is different from a certain calibration temperature point When the values ​​are consistent with or within the specified allowable range, directly call the probe calibration parameters corresponding to that temperature point. or When the actual test temperature T is located at two adjacent calibration temperature points and When the temperature is between these points, interpolation is performed based on the calibration data of adjacent temperature points to obtain the corresponding calibration parameters at the current actual temperature.

[0091] For example, when using linear interpolation, it can be expressed as: ,in: This yields the probe calibration parameters corresponding to the actual test temperature. .

[0092] Step 6: Compensate and correct the original test data;

[0093] The control and data processing module corrects the original conducted emission voltage obtained by the data acquisition module based on the probe calibration parameters corresponding to the current actual temperature.

[0094] When using voltage transfer coefficient When compensation is performed, the corrected DUT conducted emission voltage is: When the data acquisition results are expressed in logarithmic amplitude, the amplitude calibration parameter can be used. Make the correction directly: ,in, The original conducted emission voltage amplitude obtained by the data acquisition module. The amplitude of the DUT conducted emission voltage obtained after compensating for the probe's transmission characteristics.

[0095] The above treatment can reduce the impact of temperature-dependent transfer characteristics changes of the voltage test probe on the measurement results.

[0096] Step 7: Obtain and store the test results;

[0097] After data compensation, the conducted emission voltage of the DUT under the current temperature T is obtained. The control and data processing module associates and stores the target test temperature, the actual test temperature, the original test data, the calibration parameters obtained by calling or interpolation, and the corrected conducted emission voltage results, and outputs the test results under the current temperature conditions.

[0098] Step 8: Complete the wide temperature range test;

[0099] If other temperature point tests are required, reset the next target test temperature and repeat steps 2 to 7; once all preset test temperatures are completed, the conducted emission voltage test results of the DUT under wide temperature range conditions are generated.

[0100] Through the above testing and data compensation process, this invention combines the actual temperature fed back by the temperature control test chamber with the temperature-related calibration parameters of the voltage test probe, so that the original test data obtained under different temperature conditions can be corrected according to the corresponding probe transmission characteristics, thereby improving the consistency and comparability of the wide-temperature-range integrated circuit conducted emission voltage test results.

[0101] The above description is merely a preferred embodiment of the present invention. It should be understood that the present invention is not limited to the forms disclosed herein and should not be construed as excluding other embodiments. It can be used in various other combinations, modifications, and improvements, and can be altered within the scope of the concept described herein through the above teachings or related technologies or knowledge. Modifications and variations made by those skilled in the art that do not depart from the spirit and scope of the present invention should be within the protection scope of the appended claims.

Claims

1. A testing device for conducted emission voltage of integrated circuits suitable for a wide temperature range, characterized in that: The device includes a power supply module, a temperature control test chamber, a voltage test probe, a data acquisition module, and a control and data processing module. The power supply module is used to provide the power supply voltage and operating current required for the normal operation of the device under test; The temperature-controlled test chamber is used to provide an adjustable and stable temperature environment for the device under test. The voltage test probe is used to acquire the conducted transmission voltage signal at the pin under test of the device under test and transmit the radio frequency voltage signal at the test node of the device under test to the back-end data acquisition module. Before the formal test, the transmission characteristics of the voltage test probe are calibrated under different temperature conditions by a calibration device, and the obtained temperature-related calibration parameters are stored in the control and data processing module for compensation of subsequent actual test data. The data acquisition module is used to receive the radio frequency voltage signal output by the voltage test probe and to complete the acquisition of conducted transmission voltage data of the device under test. The control and data processing module is used to control the test equipment, record the test temperature, and store the test data. Based on the actual temperature information fed back by the temperature control test chamber, it determines the probe calibration parameters corresponding to the current test conditions, compensates and corrects the original conducted emission voltage data obtained by the data acquisition module, and finally outputs the test results.

2. The test apparatus for conducted emission voltage of integrated circuits under a wide temperature range according to claim 1, characterized in that: The calibration device includes a temperature-controlled test chamber, a voltage test probe, a calibration board, and a vector network analyzer; the voltage test probe and calibration board are located inside the temperature-controlled test chamber, and the vector network analyzer is located outside the temperature-controlled test chamber and is connected to the calibration structure inside the chamber via an RF cable; The calibration board includes a through calibration board and an open calibration board. The through calibration board is used to obtain the two-port transmission characteristics of the calibration fixture, and the open calibration board is used to obtain the reflection characteristics of the calibration structure. It is connected to the voltage test probe to be calibrated to complete the overall network parameter measurement. By de-embedding the influence of the calibration fixture, the transmission characteristics of the voltage test probe itself are obtained.

3. The test apparatus for conducted emission voltage of integrated circuits under a wide temperature range according to claim 2, characterized in that: The calibration process of the calibration device includes: S1. Perform two-port calibration on the vector network analyzer to determine the reference surface for subsequent S-parameter measurements and set the calibration temperature; S2. Measure the 150Ω through calibration plate to obtain the two-port scattering parameter matrix, measure the 150Ω open-circuit calibration plate to obtain the open-circuit reflection coefficient, and then obtain the two-port scattering parameters of the calibration transition network at the current temperature. S3, the overall network consisting of the measurement calibration board and the voltage test probe, is used to obtain the characteristics of the voltage test probe itself by embedding; S4. Save the current temperature calibration data and complete the calibration of all preset temperature points to form the frequency-temperature calibration parameter set of the voltage test probe.

4. The test apparatus for conducted emission voltage of integrated circuits under a wide temperature range according to claim 3, characterized in that: S2 specifically includes: S201, at temperature Under the given conditions, the two-port scattering parameters of a 150Ω through-type calibration plate were measured using a vector network analyzer to characterize the transmission characteristics of the calibration fixture and corresponding transition structure at the current temperature, yielding the desired results. ,in, Indicates at frequency f and calibration temperature The two-port scattering parameter matrix of a 150 Ω through-hole calibration plate under the given conditions. and These represent the reflection coefficients of port 1 and port 2, respectively. and These represent the forward transmission coefficient from port 1 to port 2 and the reverse transmission coefficient from port 2 to port 1, respectively. S202, Maintain temperature With the 150 Ω open-circuit calibration board connected to the vector network analyzer, the reflection coefficient at port 1 is measured. And it is recorded as the reflection coefficient of the open-circuit calibration plate. Combined with the two-port parameters of the through calibration board obtained in step S201 and the obtained open-circuit reflection coefficient Based on the corresponding structural relationship between the through calibration board and the open-circuit calibration board, the two-port scattering parameters of the calibration transition network under the current temperature conditions are obtained. .

5. A test apparatus for conducted emission voltage of integrated circuits under a wide temperature range according to claim 3, characterized in that: S3 specifically includes: S301. Connect the voltage test probe to the open-circuit calibration board, and use a vector network analyzer to measure the two-port scattering parameters of the overall network composed of the two. ; S302, calibrate the two-port scattering parameters of the transition network. Convert to transmission matrix The overall network two-port scattering parameters Convert to transmission matrix Then the transmission matrix of the voltage test probe itself is Thus, the scattering parameters of the voltage test probe are obtained as follows: ,in, Indicates the voltage test probe at temperature The transmission matrix below, T2S[·] represents the scattering parameters of the voltage test probe, and T2S[·] represents the matrix transformation operation that converts the transmission matrix into a scattering parameter matrix; thus, the voltage transfer coefficient of the voltage test probe at the current temperature is obtained. The corresponding amplitude calibration parameters are ,in, Indicates at frequency f and calibration temperature Voltage transfer coefficient of voltage test probe under certain conditions This indicates the voltage at the probe's radio frequency output terminal. This indicates the input voltage on the side where the probe is connected to the node under test of the device.

6. The test apparatus for conducted emission voltage of integrated circuits under a wide temperature range according to claim 1, characterized in that: The compensation and correction of the raw conducted emission voltage data obtained by the data acquisition module includes: A1. Set the target test temperature, power on the device under test and enter a stable working state, the temperature control test chamber reaches and maintains the target temperature, and collect the conducted emission voltage of the device under test; A2. Read the actual test temperature and determine the calibration parameters, and compensate and correct the original test data; A3. Obtain and store the test results. If other temperature point tests are to be carried out, repeat steps A1 and A2. After all preset test temperatures are completed, the conducted emission voltage test results of the device under test under wide temperature range conditions are generated.

7. A test apparatus for conducted emission voltage of integrated circuits under a wide temperature range according to claim 6, characterized in that: A2 specifically includes the following: A201. The control and data processing module synchronously reads the current actual test temperature T and compares it with the calibration temperature point in the frequency-temperature calibration parameter set of the voltage test probe. When the actual test temperature T matches a certain calibration temperature point... When the values ​​are consistent or within the specified allowable range, directly call the probe calibration parameters corresponding to that temperature point; when the actual test temperature T is located at two adjacent calibration temperature points... and When the temperature is between these points, interpolation is performed based on the calibration data of adjacent temperature points to obtain the corresponding calibration parameters at the current actual temperature. A202, the control and data processing module corrects the original conducted emission voltage obtained by the data acquisition module based on the probe calibration parameters corresponding to the current actual temperature. When using the voltage transfer coefficient... During compensation, the corrected conducted emission voltage of the device under test is: When the data acquisition results are expressed using logarithmic amplitude values, the amplitude calibration parameter is used. Directly correct and obtain ,in, This represents the original conducted emission voltage amplitude obtained by the data acquisition module. This represents the amplitude of the conducted emission voltage of the device under test obtained after compensating for the transmission characteristics of the probe.

8. A test apparatus for conducted emission voltage of integrated circuits under a wide temperature range according to claim 6, characterized in that: A1 specifically includes: A101. According to the wide temperature range conducted emission test requirements of the device under test, set the current target test temperature T in the control and data processing module, and control the temperature control test chamber to run to the corresponding temperature state. A102. The power supply module provides the specified operating voltage and current to the device under test, enabling the device under test to enter the preset operating mode and maintain stable operation. During the test, the power supply status and operating conditions of the device under test are kept consistent. A103. Control the temperature control test chamber to gradually reach the target test temperature T, and continuously read the actual temperature inside the chamber. When the actual temperature reaches the preset temperature condition, enter the conducted emission voltage test stage. A104. The data acquisition module acquires the conducted emission voltage of the device under test at the current temperature through the voltage test probe within the preset test frequency range.

Images