Method and system for moving boundary coupling modeling and crack risk assessment for laser-induced etching

Abstract

This invention discloses a method and system for moving boundary coupling modeling and crack risk assessment in laser-induced etching. The method includes receiving a parameter vector as a unified interface; constructing a volume heat source term based on the parameter vector and solving the heat conduction equation to obtain the temperature field; calculating the cumulative energy deposition based on the volume heat source term and mapping it to a modification degree field; substituting the temperature field and modification degree field into the thermoelastic constitutive equation to solve for the transient stress field and the residual stress field; establishing the modification gain and etching selectivity ratio based on the modification degree field, determining the interface normal velocity, iteratively updating the hole boundary with the etching time step, and resolving the stress field after each update; finally, combining the obtained multiple intermediate variables to output a comprehensive crack risk assessment result. This invention unifies laser thermal input, modification formation, stress establishment, and etching deconstraint into the same calculation process, realizing iterative coupling between moving boundary and stress redistribution, and providing a modeling foundation for process optimization and crack control.

Description

Technical Field

[0001] This invention relates to the technical field of laser micromachining and numerical simulation, and in particular to a moving boundary coupling modeling method for laser-induced deep etching (LIDE), which is especially suitable for unified modeling and crack risk assessment of thermal field, modification, stress and etching moving boundary in the precision machining process of glass substrates such as through glass vias (TGV). Background Technology

[0002] Through-Glass Via (TGV) technology is a key process in advanced packaging. It enables three-dimensional interconnection between chips by fabricating high-density, high-aspect-ratio microvias on a glass substrate. Compared to traditional Through-Silicon Via (TSV) technology, TGV technology offers advantages such as lower dielectric constant, lower signal loss, and lower cost, showing great promise in applications such as 2.5D / 3D packaging and glass cores.

[0003] Laser-induced deep etching (LIDE) is one of the mainstream TGV fabrication processes. Its basic principle is as follows: First, a specific area of ​​the glass substrate is selectively modified using an ultrashort pulse laser (such as a picosecond laser or a femtosecond laser), causing changes in the internal structure of the glass in the modified area (such as chemical bond breaking, density changes, crystal structure adjustment, etc.). Then, the laser-treated glass substrate is placed in a chemical etching solution such as hydrofluoric acid for wet etching. Since the etching rate of the modified area is much higher than that of the unmodified area, the desired through-hole or blind hole structure is formed on the glass substrate.

[0004] However, the following technical challenges exist in the practical application of the LIDE process:

[0005] First, the laser-induced phase generates a strong and uneven temperature rise in localized areas of the glass, accompanied by changes in the internal structure of the material. This process leads to a mismatch between thermal expansion and cooling contraction, and also creates a structural mismatch between the modified and unmodified regions. Consequently, transient and residual stresses tend to accumulate at orifices, holes, thin-walled areas, and geometric transition zones.

[0006] Second, after entering the wet etching stage, the material is continuously removed, the original boundary conditions and stress constraints are constantly changing, the previously suppressed stress will be gradually released and redistributed, thereby inducing the initiation, propagation and manifestation of microcracks and hidden cracks.

[0007] Third, existing analytical methods typically treat laser induction, modification formation, stress evolution, and etching material removal separately, making it difficult to explain in a unified calculation chain "how parameters cause changes in the thermal field, how the thermal field forms modification and stress, and how the movement of the etching boundary, in turn, changes the stress distribution." This fragmented approach makes it impossible to accurately assess the crack risk under different combinations of parameters. Summary of the Invention

[0008] The purpose of this invention is to overcome the shortcomings of the prior art and provide a moving boundary coupling modeling and crack risk assessment method for laser-induced etching. This method unifies laser parameters, structural parameters, etching parameters, temperature field, modification degree field, stress field, and stress redistribution under the moving boundary of the etching process, thereby achieving unified modeling and crack risk assessment from process parameters to field output.

[0009] To achieve the above objectives, the technical solution provided by this invention is as follows:

[0010] A method for moving boundary coupling modeling and crack risk assessment for laser-induced etching includes the following steps:

[0011] S1, Received parameter vector The parameter vector Including laser parameters, etching parameters, structural parameters, and boundary condition parameters, which are used as unified interface variables for coupling calls in subsequent steps;

[0012] S2. Based on the laser parameters and scanning trajectory, construct a heat source term for the pulse train superposition. The The scanning trajectory, pulse timing, absorption attenuation, and local energy concentration characteristics of the focal spot are all written into the same heat source item;

[0013] S3, Based on the aforementioned heat source item The temperature field is obtained. The temperature field This includes temperature distribution, temperature peaks, and temperature gradients during laser loading and cooling phases;

[0014] S4, Based on the heat source item Calculate local cumulative energy deposition and deposit the accumulated energy Mapped to the degree of modification field ;

[0015] S5, The degree of modification field Transformed into intrinsic strain terms and the intrinsic strain term Based on the temperature field The obtained thermal strain term By inputting a common thermoelastic model, the transient stress field is obtained. Residual stress field after final cooling Maximum principal stress field and its peak ;

[0016] S6, The degree of modification field Using etching parameters as input, a modified gain is established. Determine the interface normal velocity relative to the etching selection ratio. And within the etching time step, through the interface normal velocity Iterative updates of the orifice and orifice wall boundaries yield a new orifice diameter. Taper Sidewall contour ;

[0017] S7. Combine the calculation results from steps S3 to S6 to conduct a comprehensive crack risk assessment and obtain the comprehensive crack risk assessment result.

[0018] Furthermore, the heat source item The expression is as follows:

[0019] ;

[0020] in, The amplitude of the heat source is determined by the single-pulse energy in the laser parameters. Effective absorption coefficient The relevant light spot parameters are used to determine the parameters. Indicates the point to be found up to the th The lateral distance between the centers of action of each pulse; Indicates the width of the horizontal distribution; Indicates the pulse width in time; Indicates the depth attenuation coefficient; Represents depth coordinates; For the first The arrival time of each pulse; The repetition frequency.

[0021] Furthermore, in step S3, the heat source item The temperature response, i.e., the temperature field, is formed in the material after conduction, accumulation, and boundary heat transfer. .

[0022] Furthermore, based on the heat source item Calculate local cumulative energy deposition The formula is as follows:

[0023] ;

[0024] in, Indicates the end time of the laser induction phase;

[0025] Cumulative Energy Deposition Mapped to the degree of modification field The formula is as follows:

[0026] ;

[0027] in, Indicates the initial threshold for modification. Indicates the modification saturation threshold; A value close to 0 indicates that the region remains essentially unchanged. A value close to 1 indicates that the region has reached significant modification or is even close to saturation modification.

[0028] Further, step S5 includes:

[0029] Based on the temperature field The obtained thermal strain term :

[0030] ;

[0031] in, The coefficient of thermal expansion is For temperature field Temperature value, For reference temperature, It is a unit second-order tensor;

[0032] Modification degree field Transformed into intrinsic strain terms :

[0033] ;

[0034] This is the intrinsic strain amplitude coefficient;

[0035] thermal strain term and intrinsic strain terms The transient stress field is obtained by inputting the data into a thermoelastic model, given the clamping constraints, free surface, and boundary condition parameters. and the residual stress field after final cooling , , Indicates the time when cooling relaxation ends;

[0036] Maximum principal stress field and its peak Transient stress fields The maximum value and peak value.

[0037] Furthermore, the established etching selectivity ratio The expression is as follows:

[0038] ;

[0039] Among them, etching selectivity Used to characterize the degree of accelerated corrosion of the modified region relative to the matrix region;

[0040] The etching rate of the modified region is calculated using the following formula:

[0041] ;

[0042] in, This is the etching rate pre-factor for the modified region. This refers to the effective concentration of acid in the etching parameters. The reaction order is... For activation energy, The gas constant is This refers to the etching temperature in the etching parameters;

[0043] The substrate etching rate is calculated using the following formula:

[0044] ;

[0045] in, This is the etching rate pre-factor for the substrate;

[0046] The interface normal velocity The expression is as follows:

[0047] ;

[0048] in, This is an indicator function that indicates whether the interface is a modified material; when the interface is located in the modified material region... Set to 1; when the interface is located in the unmodified material region, Take 0.

[0049] Furthermore, the modified gain For linear gain:

[0050] = ;

[0051] in, The modified gain coefficient, and The higher the degree of modification, the more obvious the etching acceleration, which facilitates experimental fitting; That is, the degree of modification field .

[0052] Furthermore, the modified gain For exponential gain:

[0053] = ;

[0054] in, The modified gain coefficient, and This term is used to describe a sudden increase in the etching rate after modification in certain material systems. That is, the degree of modification field .

[0055] Furthermore, the calculation results obtained in steps S3 to S6 include the temperature distribution, temperature peak and temperature gradient, and degree of modification field during laser loading and cooling stages. Transient stress field Residual stress field after final cooling Maximum principal stress field and its peak Aperture Taper Sidewall contour ;

[0056] If the number of calculation results exceeding the corresponding threshold range is less than or equal to 2, the comprehensive assessment result of crack risk is low risk; if the number of calculation results exceeding the corresponding threshold range is greater than 2 and less than 5, the comprehensive assessment result of crack risk is medium risk; if the number of calculation results exceeding the corresponding threshold range is greater than or equal to 5, the comprehensive assessment result of crack risk is high risk.

[0057] Furthermore, to achieve the above objectives, the present invention also provides a moving boundary coupling modeling and crack risk assessment system for laser-induced etching, used to implement the above-mentioned moving boundary coupling modeling and crack risk assessment method for laser-induced etching. The system includes:

[0058] The parameter vector receiving module is used to receive parameter vectors. The parameter vector This includes laser parameters, etching parameters, structural parameters, and boundary condition parameters;

[0059] The heat source term construction module is used to construct heat source terms for pulse train superposition based on laser parameters and scanning trajectory.

[0060] Temperature field acquisition module, used to acquire temperature field based on heat source term;

[0061] The modification degree field acquisition module is used to acquire the modification degree field based on the heat source term;

[0062] The stress data acquisition module is used to acquire transient stress fields, residual stress fields after final cooling, maximum principal stress fields and their peak values ​​based on the degree of modification field and temperature field.

[0063] The etching data acquisition module is used to acquire aperture, taper, and sidewall profile based on the modification degree field and etching parameters;

[0064] The crack risk comprehensive assessment module is used to comprehensively assess crack risk.

[0065] Compared with existing technologies, the principles and advantages of this technical solution are as follows:

[0066] 1. By placing laser-induced, modified formation, stress evolution, and etching material removal in the same calculation process, the problem of each stage being isolated from each other is avoided. A unified interface is established from "process parameters" to "field quantity outputs that can be used for engineering decisions", which greatly improves the accuracy of crack risk assessment.

[0067] 2. In addition to considering thermal strain, it also considers the intrinsic strain caused by modification (such as densification, volume change, etc.) by coupling the degree of modification field with the intrinsic strain term, which is more conducive to explaining the formation cause and spatial distribution characteristics of residual stress.

[0068] 3. By adopting the time-step iteration method of etching moving boundary and stress redistribution, the process of stress peak migration as etching progresses can be reflected, and the evolution of stress concentration area and potential crack sensitive area during etching can be predicted.

[0069] 4. The output results are directly geared towards engineering applications, providing information on various aspects such as temperature, modification, stress, pore morphology, and crack risk, which facilitates process optimization and crack control. Attached Figure Description

[0070] To more clearly illustrate the technical solutions in the embodiments of the present invention or the prior art, the drawings used in the description of the embodiments or the prior art will be briefly introduced below. Obviously, the drawings described below are only some embodiments of the present invention. For those skilled in the art, other drawings can be obtained based on these drawings without creative effort.

[0071] Figure 1 This is a flowchart illustrating the principle of a moving boundary coupling modeling and crack risk assessment method for laser-induced etching according to Embodiment 1 of the present invention.

[0072] Figure 2 This is a connection block diagram of a moving boundary coupling modeling and crack risk assessment system for laser-induced etching according to Embodiment 1 of the present invention. Detailed Implementation

[0073] The present invention will be further described below with reference to specific embodiments:

[0074] like Figure 1 As shown in this embodiment, the moving boundary coupling modeling and crack risk assessment method for laser-induced etching includes the following steps:

[0075] S1, Received parameter vector The parameter vector Including laser parameters, etching parameters, structural parameters, and boundary condition parameters, these are used as unified interface variables for coupling calls in subsequent steps (used as unified interface variables to ensure that the same set of inputs is used in subsequent thermal field, modification, stress, and etching stages).

[0076] S2. Based on the laser parameters and scanning trajectory, construct a heat source term for the pulse train superposition. The The scanning trajectory, pulse timing, absorption attenuation, and local energy concentration characteristics of the focal spot are all written into the same heat source item;

[0077] In this step, namely the laser induction phase, the scanning path and pulse arrival time are determined. Each heat input is then positioned in space to determine its effect. The arrival time of each pulse is written as , is used to describe the time discreteness of a pulse train.

[0078] The heat source distribution adopts a pulse train superposition form of "lateral Gaussian + temporal Gaussian + depth exponential decay". This expression is not simply to give an existing heat conduction equation, but to unify the scanning trajectory, pulse timing, absorption attenuation, and local energy concentration characteristics of the focal spot into a single heat source term. middle.

[0079] heat source item The expression is as follows:

[0080] ;

[0081] in, The amplitude of the heat source is determined by the single-pulse energy in the laser parameters. Effective absorption coefficient The relevant light spot parameters are used to determine the parameters. Indicates the point to be found up to the th The lateral distance between the centers of action of each pulse; Indicates the width of the horizontal distribution; Indicates the pulse width in time; Indicates the depth attenuation coefficient; Represents depth coordinates; For the first The arrival time of each pulse; The repetition frequency.

[0082] S3, Based on the aforementioned heat source item The temperature field is obtained. The temperature field This includes temperature distribution, temperature peaks, and temperature gradients during laser loading and cooling phases;

[0083] In this step, the heat source item The temperature response, i.e., the temperature field, is formed in the material after conduction, accumulation, and boundary heat transfer. .

[0084] S4. The glass interior is not simply heated; varying degrees of structural modification also occur. To make this process calculable, this step is based on the aforementioned heat source term. Calculate local cumulative energy deposition and deposit the accumulated energy Mapped to the degree of modification field ;

[0085] In this step, based on the heat source item Calculate local cumulative energy deposition The formula is as follows:

[0086] ;

[0087] in, Indicates the end time of the laser induction phase;

[0088] Cumulative Energy Deposition Mapped to the degree of modification field The formula is as follows:

[0089] ;

[0090] in, Indicates the initial threshold for modification. Indicates the modification saturation threshold; A value close to 0 indicates that the region remains essentially unchanged. A value close to 1 indicates that the region has achieved significant modification or is even close to saturation modification. This mapping method preserves the physical meaning and facilitates the establishment of a relationship with experimental cross-sectional images, microscopic observation results, and subsequent etching rate differences.

[0091] S5. In the stress solution stage, this invention no longer considers stress solely as a result of temperature changes, but rather considers two sources simultaneously. The first source is thermal strain. The first source is the deformation tendency of a material due to expansion upon heating and contraction upon cooling; the second source is intrinsic strain. This refers to the equivalent deformation trend resulting from densification, volume changes, or local structural alterations caused by laser modification.

[0092] Therefore, this step will modify the degree field. Transformed into intrinsic strain terms and the intrinsic strain term Based on the temperature field The obtained thermal strain term By inputting a common thermoelastic model, the transient stress field is obtained. Residual stress field after final cooling Maximum principal stress field and its peak ;

[0093] The specific process is as follows:

[0094] Based on the temperature field The obtained thermal strain term :

[0095] ;

[0096] in, The coefficient of thermal expansion is For temperature field Temperature value, For reference temperature, It is a unit second-order tensor;

[0097] Modification degree field Transformed into intrinsic strain terms :

[0098] ;

[0099] The intrinsic strain amplitude coefficient can be calibrated through Raman stress measurement, inverse estimation of cross-sectional morphology, or by comparison and correction with measured residual stress. Intrinsic strain term The expression directly transforms the degree of modification into an equivalent deformation that can be used for stress calculation, and is the core interface connecting "modification formation" and "stress establishment".

[0100] thermal strain term and intrinsic strain terms The transient stress field is obtained by inputting the data into a thermoelastic model, given the clamping constraints, free surface, and boundary condition parameters. and the residual stress field after final cooling , , Indicates the time when cooling relaxation ends;

[0101] Maximum principal stress field and its peak Transient stress fields The maximum value and peak value.

[0102] S6, The degree of modification field Using etching parameters as input, a modified gain is established. Determine the interface normal velocity relative to the etching selection ratio. And within the etching time step, through the interface normal velocity Iterative updates of the orifice and orifice wall boundaries yield a new orifice diameter. Taper Sidewall contour ;

[0103] The specific process for this step is as follows:

[0104] Established etching selectivity The expression is as follows:

[0105] ;

[0106] Among them, etching selectivity Used to characterize the degree of accelerated corrosion of the modified region relative to the matrix region;

[0107] During the wet etching stage, the modified areas are usually more easily etched than the unmodified substrate, so the etching rates of the two are not the same.

[0108] Etching rate of modified region The calculation formula is as follows:

[0109] ;

[0110] in, This is the etching rate pre-factor for the modified region. This refers to the effective concentration of acid in the etching parameters. The reaction order is... For activation energy, The gas constant is Etching temperature in etching parameters; Modification gain For linear gain:

[0111] = ;

[0112] in, The modified gain coefficient, and The higher the degree of modification, the more obvious the etching acceleration, which facilitates experimental fitting; That is, the degree of modification field ;

[0113] Substrate etching rate The calculation formula is as follows:

[0114] ;

[0115] in, This is the etching rate pre-factor for the substrate;

[0116] The interface normal velocity The expression is as follows:

[0117] ;

[0118] in, This is an indicator function that indicates whether the interface is a modified material; when the interface is located in the modified material region... Set to 1; when the interface is located in the unmodified material region, Take 0.

[0119] S7. Combine the calculation results from steps S3 to S6 to conduct a comprehensive crack risk assessment and obtain the comprehensive crack risk assessment result.

[0120] In this step, the calculation results obtained in steps S3 to S6 include the temperature distribution, temperature peak and temperature gradient, and degree of modification field during laser loading and cooling. Transient stress field Residual stress field after final cooling Maximum principal stress field and its peak Aperture Taper Sidewall contour ;

[0121] If the number of calculation results exceeding the corresponding threshold range is less than or equal to 2, the comprehensive assessment result of crack risk is low risk; if the number of calculation results exceeding the corresponding threshold range is greater than 2 and less than 5, the comprehensive assessment result of crack risk is medium risk; if the number of calculation results exceeding the corresponding threshold range is greater than or equal to 5, the comprehensive assessment result of crack risk is high risk.

[0122] In addition, this embodiment also includes a moving boundary coupling modeling and crack risk assessment system for laser-induced etching, used to implement the above-mentioned moving boundary coupling modeling and crack risk assessment method for laser-induced etching, such as... Figure 2 As shown, the system includes:

[0123] The parameter vector receiving module is used to receive parameter vectors. The parameter vector This includes laser parameters, etching parameters, structural parameters, and boundary condition parameters;

[0124] The heat source term construction module is used to construct heat source terms for pulse train superposition based on laser parameters and scanning trajectory.

[0125] Temperature field acquisition module, used to acquire temperature field based on heat source term;

[0126] The modification degree field acquisition module is used to acquire the modification degree field based on the heat source term;

[0127] The stress data acquisition module is used to acquire transient stress fields, residual stress fields after final cooling, maximum principal stress fields and their peak values ​​based on the degree of modification field and temperature field.

[0128] The etching data acquisition module is used to acquire aperture, taper, and sidewall profile based on the modification degree field and etching parameters;

[0129] The crack risk comprehensive assessment module is used to comprehensively assess crack risk.

[0130] Example 2

[0131] The difference between this embodiment and Embodiment 1 is that, in step S6, the modified gain is established. For exponential gain:

[0132] = ;

[0133] in, The modified gain coefficient, and This term is used to describe a sudden increase in the etching rate after modification in certain material systems. That is, the degree of modification field .

[0134] The above-described embodiments are merely preferred embodiments of the present invention and are not intended to limit the scope of the present invention. Therefore, any changes made in accordance with the shape and principle of the present invention should be covered within the protection scope of the present invention.

Claims

1. A method for moving boundary coupling modeling and crack risk assessment in laser-induced etching, characterized in that, Includes the following steps: S1, Received parameter vector The parameter vector Including laser parameters, etching parameters, structural parameters, and boundary condition parameters, which are used as unified interface variables for coupling calls in subsequent steps; S2. Based on the laser parameters and scanning trajectory, construct a heat source term for the pulse train superposition. The The scanning trajectory, pulse timing, absorption attenuation, and local energy concentration characteristics of the focal spot are all written into the same heat source item; S3, Based on the aforementioned heat source item The temperature field is obtained. The temperature field This includes temperature distribution, temperature peaks, and temperature gradients during laser loading and cooling phases; S4, Based on the aforementioned heat source item Calculate local cumulative energy deposition and deposit the accumulated energy Mapped to the degree of modification field ; S5, The degree of modification field Transformed into intrinsic strain terms and the intrinsic strain term Based on the temperature field The obtained thermal strain term By inputting a common thermoelastic model, the transient stress field is obtained. Residual stress field after final cooling Maximum principal stress field and its peak ; S6, The degree of modification field Using etching parameters as input, a modified gain is established. Determine the interface normal velocity relative to the etching selection ratio. And within the etching time step, through the interface normal velocity Iterative updates of the orifice and orifice wall boundaries yield a new orifice diameter. Taper Sidewall contour ; S7. Combine the calculation results from steps S3 to S6 to conduct a comprehensive crack risk assessment and obtain the comprehensive crack risk assessment result.

2. The method for moving boundary coupling modeling and crack risk assessment for laser-induced etching according to claim 1, characterized in that, The heat source item The expression is as follows: ； in, The amplitude of the heat source is determined by the single-pulse energy in the laser parameters. Effective absorption coefficient The relevant light spot parameters are used to determine the parameters. Indicates the point to be found up to the th The lateral distance between the centers of action of each pulse; Indicates the width of the horizontal distribution; Indicates the pulse width in time; Indicates the depth attenuation coefficient; Represents depth coordinates; For the first The arrival time of each pulse; f is the repetition frequency.

3. The method for moving boundary coupling modeling and crack risk assessment for laser-induced etching according to claim 1, characterized in that, In step S3, the heat source item The temperature response, i.e., the temperature field, is formed in the material after conduction, accumulation, and boundary heat transfer. .

4. The method for moving boundary coupling modeling and crack risk assessment for laser-induced etching according to claim 1, characterized in that, Based on the heat source item Calculate local cumulative energy deposition The formula is as follows: ； in, Indicates the end time of the laser induction phase; Cumulative Energy Deposition Mapped to the degree of modification field The formula is as follows: ； in, Indicates the initial threshold for modification. Indicates the modification saturation threshold; A value close to 0 indicates that the region remains essentially unchanged. A value close to 1 indicates that the region has reached significant modification or is even close to saturation modification.

5. The method for moving boundary coupling modeling and crack risk assessment for laser-induced etching according to claim 1, characterized in that, Step S5 includes: Based on the temperature field The obtained thermal strain term : ； in, The coefficient of thermal expansion is... For temperature field Temperature value, For reference temperature, It is a unit second-order tensor; Modification degree field Transformed into intrinsic strain terms : ； This is the intrinsic strain amplitude coefficient; thermal strain term and intrinsic strain terms The transient stress field is obtained by inputting the data into a thermoelastic model, given the clamping constraints, free surface, and boundary condition parameters. and the residual stress field after final cooling , , Indicates the time when cooling relaxation ends; Maximum principal stress field and its peak Transient stress fields The maximum value and peak value.

6. The method for moving boundary coupling modeling and crack risk assessment for laser-induced etching according to claim 1, characterized in that, Established etching selectivity The expression is as follows: ； Among them, etching selectivity Used to characterize the degree of accelerated corrosion of the modified region relative to the matrix region; The etching rate of the modified region is calculated using the following formula: ； in, This is the etching rate pre-factor for the modified region. This refers to the effective concentration of acid in the etching parameters. The reaction order is... For activation energy, The gas constant is This refers to the etching temperature in the etching parameters; The substrate etching rate is calculated using the following formula: ； in, This is the etching rate pre-factor for the substrate; The interface normal velocity The expression is as follows: ； in, This is an indicator function that indicates whether the interface is a modified material; when the interface is located in the modified material region... Set to 1; when the interface is located in the unmodified material region, Take 0.

7. The method for moving boundary coupling modeling and crack risk assessment for laser-induced etching according to claim 6, characterized in that, The modified gain For linear gain: = ； in, The modified gain coefficient, and The higher the degree of modification, the more obvious the etching acceleration, which facilitates experimental fitting; That is, the degree of modification field .

8. The method for moving boundary coupling modeling and crack risk assessment for laser-induced etching according to claim 6, characterized in that, The modified gain For exponential gain: = ； in, The modified gain coefficient, and This term is used to describe a sudden increase in the etching rate after modification in certain material systems. That is, the degree of modification field .

9. The method for moving boundary coupling modeling and crack risk assessment for laser-induced etching according to claim 1, characterized in that, The calculation results obtained in steps S3 to S6 include the temperature distribution, temperature peak and temperature gradient, and degree of modification field during laser loading and cooling. Transient stress field Residual stress field after final cooling Maximum principal stress field and its peak Aperture Taper Sidewall contour ; If the number of calculation results exceeding the corresponding threshold range in steps S3 to S6 is less than or equal to 2, then the overall assessment result of crack risk is low risk. If the number of calculation results exceeding the corresponding threshold range is greater than 2 but less than 5, the overall assessment result of crack risk is medium risk. If the number of calculation results exceeding the corresponding threshold range is greater than or equal to 5, the overall assessment result of crack risk is high risk.

10. A system for moving boundary coupling modeling and crack risk assessment for laser-induced etching, used to implement the method for moving boundary coupling modeling and crack risk assessment for laser-induced etching as described in any one of claims 1-9, comprising: The parameter vector receiving module is used to receive parameter vectors. The parameter vector This includes laser parameters, etching parameters, structural parameters, and boundary condition parameters; The heat source term construction module is used to construct heat source terms for pulse train superposition based on laser parameters and scanning trajectory. Temperature field acquisition module, used to acquire temperature field based on heat source term; The modification degree field acquisition module is used to acquire the modification degree field based on the heat source term; The stress data acquisition module is used to acquire transient stress fields, residual stress fields after final cooling, maximum principal stress fields and their peak values ​​based on the degree of modification field and temperature field. The etching data acquisition module is used to acquire aperture, taper, and sidewall profile based on the modification degree field and etching parameters; The crack risk comprehensive assessment module is used to comprehensively assess crack risk.

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