Transparent display device and active element array substrate

Abstract

This disclosure provides a transparent display device and an active element array substrate. The transparent display device includes a substrate, a dielectric layer, active elements, a light-emitting diode (LED), and a blue insulating layer. The substrate overlaps a light-shielding area and a light-transmitting area. The dielectric layer is located on the substrate and includes an opening overlapping the light-transmitting area. The active element is disposed in the light-shielding area and overlaps the dielectric layer. The LED is electrically connected to the active element. The blue insulating layer overlaps the light-transmitting area and the opening in the dielectric layer.

Description

Technical Field

[0001] This invention relates to a transparent display device and an active element array substrate. Background Technology

[0002] A transparent display device is a device that allows ambient light to pass through while displaying an image. When using a transparent display device, users can not only view the displayed image but also observe the scenery behind the device, creating a visual effect of image and reality being superimposed. With the development of display technology, transparent display devices have been gradually applied in various fields, such as display windows, head-up display systems, and augmented reality devices, to enhance the interactivity and intuitiveness of information presentation.

[0003] Generally, transparent display devices comprise transparent and non-transparent materials. The non-transparent material can be disposed in the light-shielding area of ​​the display device to form the circuitry and light-emitting structures required for displaying the image. This non-transparent material may include reflective, light-absorbing, or other light-shielding materials. Conversely, areas in the transparent display device where no non-transparent material is disposed form light-transmitting areas, allowing ambient light to pass through. Through this arrangement of light-transmitting and light-shielding areas, the transparent display device can provide a visual transparency effect while maintaining its display function. Summary of the Invention

[0004] The present invention provides a transparent display device and an active element array substrate, which can reduce the impact of the substrate's yellowish tint on the overall visual effect and improve display quality.

[0005] Some embodiments of the present invention provide a transparent display device, which includes a substrate, an active element, a light-emitting diode, and a blue insulating layer. The substrate overlaps a light-shielding region and a light-transmitting region. The active element is disposed in the light-shielding region. The light-emitting diode is electrically connected to the active element. The blue insulating layer overlaps the light-transmitting region. The stacked structure of all the layers overlapping the light-transmitting region constitutes a [b / b] structure. The transmittance is 3.8 to 7.2 and the transmittance for light with wavelengths of 380 nm to 780 nm is 70% to 90%.

[0006] Some embodiments of the present invention provide an active element array substrate, comprising a substrate, active elements, and a blue insulating layer. The substrate overlaps a light-shielding region and a light-transmitting region. The active elements are disposed in the light-shielding region. The blue insulating layer overlaps the light-transmitting region. The stacked structure formed by all the film layers overlapping the light-transmitting region is b. The transmittance is 3.8 to 7.2 and the transmittance for light with wavelengths of 380 nm to 780 nm is 70% to 90%.

[0007] Some embodiments of the present invention provide a transparent display device, comprising a substrate, a dielectric layer, an active element, a light-emitting diode (LED), and a blue insulating layer. The substrate overlaps a light-shielding region and a light-transmitting region. The dielectric layer is located on the substrate and includes an opening overlapping the light-transmitting region. The active element is disposed in the light-shielding region and overlaps the dielectric layer. The LED is electrically connected to the active element. The blue insulating layer overlaps the light-transmitting region and the opening in the dielectric layer. Attached Figure Description

[0008] Figure 1 This is a cross-sectional schematic diagram of a transparent display device according to an embodiment of the present invention.

[0009] Figures 2A to 2E It is manufacturing Figure 1 Cross-sectional schematic diagrams of various stages of the transparent display device.

[0010] Figure 3 This is a cross-sectional schematic diagram of a transparent display device according to an embodiment of the present invention.

[0011] Figure 4 This is a cross-sectional schematic diagram of a transparent display device according to an embodiment of the present invention.

[0012] Figure 5 This is a cross-sectional schematic diagram of a transparent display device according to an embodiment of the present invention.

[0013] Figure 6 This is a cross-sectional schematic diagram of a light-emitting diode according to an embodiment of the present invention.

[0014] Figure 7 This is a cross-sectional schematic diagram of a transparent display device according to an embodiment of the present invention.

[0015] Figures 8A to 8D It is manufacturing Figure 7 Cross-sectional schematic diagrams of various stages of the transparent display device.

[0016] Figure 9 This is a top view schematic diagram of a transparent display device according to an embodiment of the present invention.

[0017] The annotations in the attached figures are explained as follows: 10A, 10B, 10C, 10D, 10E: Transparent display devices 11A, 11B, 11D, 11E: Active element array substrate 12: Top Cover Structure 100:Substrate 102: First side 104: Second side 110: Buffer layer 120: Gate dielectric layer 130: Dielectric layer 132: First Floor 134: Second layer 140: Passivation layer 150: Flattening layer 160: Pixel Definition Layer 182: First flattening layer 184: Second flat layer 191: First passivation layer 193: Second passivation layer 195: Third passivation layer 197: Fourth passivation layer 200: Active Component 210: Semiconductor layer 220: Gate 232: First source / drain 234: Second source / drain 300: Blue insulation layer 400, 400A, 400B: Light Emitting Diodes 410: First electrode 420: Semiconductor Structure 422: Hole Injection Layer 424: Hole transport layer 426: Emissive layer 428: Electron Transport Layer 430: Second electrode 510: First conductive pattern layer 512, 522, 532: Conductive structures 514, 524, 534: Signal lines 520: Second conductive pattern layer 530: Third conductive pattern layer 542, 544: Sealing pads 552, 554: Connection structure 610: Black Matrix 620: Filter 630: Covering layer 640: Buffer layer 650: Cover plate D1, D2: Distance H1: First opening H2, H4: Second opening H3: Third opening O1, O2, O3, O4, O7, O8, O9, O10, O11, O12, O13, O14: Through holes SA: Shading area ST: Stacked Structure T1, T2: Thickness TA: Light-transmitting zone. Detailed Implementation

[0018] Figure 1 This is a cross-sectional schematic diagram of a transparent display device 10A according to an embodiment of the present invention. Please refer to... Figure 1 The transparent display device 10A includes an active element array substrate 11A and a light-emitting diode 400A, wherein the active element array substrate 11A includes a substrate 100, a dielectric layer 130, an active element 200, and a blue insulating layer 300. In some embodiments, the active element array substrate 11A may optionally include a buffer layer 110, a gate dielectric layer 120, a passivation layer 140, and a pixel definition layer 160.

[0019] The substrate 100 overlaps the light-shielding area SA and the light-transmitting area TA. In this document, the light-shielding area SA refers to the area where a non-transparent material is disposed. For example, the active element 200 and the light-emitting diode 400A are both disposed in the light-shielding area SA. In some embodiments, other passive elements (e.g., capacitors), signal lines, pads, black matrices, etc., are also disposed in the light-shielding area SA, but... Figure 1 These components are omitted from the drawing. The light-transmitting area TA refers to the area where no non-transparent material is provided. Therefore, ambient light can pass through the light-transmitting area TA and pass through the transparent display device 10A. However, in the light-shielding area SA, the light will be blocked by a film or component made of non-transparent material above the substrate 100.

[0020] In some embodiments, the substrate 100 comprises a polymeric material, such as polyimide (PI), polydimethylsiloxane (PDMS), polyethylene terephthalate (PET), polyethylene naphthalate (PEN), polyester (PES), polymethylmethacrylate (PMMA), polycarbonate (PC), polyurethane (PU), glass, or other suitable materials. In some embodiments, the substrate 100 is a flexible substrate or a stretchable substrate.

[0021] In some embodiments, the substrate 100 is initially transparent and colorless, but during the manufacturing process of the transparent display device 10A, the substrate 100 is heated and transforms from a colorless transparent substrate into a yellow transparent substrate. For example, heating the polymer material of the substrate 100 causes the molecular chains to break or recombine, generating unsaturated bonds, conjugated double bonds, carbonyl groups, etc., making the substrate 100 yellowish. Furthermore, under heating conditions, the polymer material of the substrate 100 may react with oxygen, thereby causing the material to appear yellow. In some embodiments, additives in the substrate 100 decompose or become ineffective after heating, resulting in the substrate 100 appearing yellow.

[0022] In some embodiments, substrate 100 comprises colorless polyimide (CPI) and is transparent and colorless before heat treatment. However, after undergoing a series of heat treatments, substrate 100 transforms into a yellow transparent substrate. For example, the high-temperature process during material deposition causes substrate 100 to turn yellow.

[0023] In some embodiments, the substrate 100 is a yellow transparent substrate from the outset. For example, by adding additional additives such as stabilizers, crosslinking agents, and antioxidants to the substrate 100 to improve its heat resistance, chemical resistance, toughness, etc., these additives cause the substrate 100 to be yellow before undergoing heat treatment.

[0024] In some embodiments, the light transmittance of substrate 100 is 80%-90%. In some embodiments, substrate 100 conforms to the standards set by the International Commission on Illumination (CIE) 1976 L. a b b in color space Greater than 0, for example, 3 to 10.

[0025] The buffer layer 110 is located on the substrate 100. The buffer layer 110 includes an insulating material, such as silicon oxide, silicon nitride, silicon oxynitride, aluminum oxide, zirconium oxide, hafnium oxide, tantalum oxide, organic materials, combinations of the above materials, or other suitable materials.

[0026] An active element 200 is located on a substrate 100, and a buffer layer 110 is located between the active element 200 and the substrate 100. In some embodiments, the active element 200 includes a semiconductor layer 210, a gate 220, a first source / drain 232, and a second source / drain 234. On the normal direction ND of the top surface of the substrate 100, the gate 220 overlaps the semiconductor layer 210, and a gate dielectric layer 120 is located between the gate 220 and the semiconductor layer 210. The gate dielectric layer 120 is located in the light-shielding region SA and the light-transmitting region TA. The first source / drain 232 and the second source / drain 234 are electrically connected to the semiconductor layer 210, respectively. In some embodiments, the gate dielectric layer 120 includes silicon oxide, silicon nitride, silicon oxynitride, aluminum oxide, zirconium oxide, hafnium oxide, tantalum oxide, organic materials, combinations of the above materials, or other suitable materials. In other embodiments, the gate dielectric layer 120 is located only in the light-shielding region SA and not in the light-transmitting region TA. In some embodiments, the semiconductor layer 210 is a single-layer or multi-layer structure, comprising amorphous silicon, polycrystalline silicon, microcrystalline silicon, monocrystalline silicon, organic semiconductor materials, oxide semiconductor materials (e.g., indium zinc oxide, indium gallium zinc oxide, or other suitable materials, or combinations thereof), or other suitable materials or combinations thereof.

[0027] In some embodiments, the active element 200 includes a top-gate thin-film transistor, wherein the semiconductor layer 210 is closer to the substrate 100 than the gate 220. For example, the semiconductor layer 210 is located on a buffer layer 110. A gate dielectric layer 120 is located on the semiconductor layer 210 and the buffer layer 110. The gate 220 is located on the gate dielectric layer 120. A dielectric layer 130 is located on the gate 220 and the gate dielectric layer 120. A first source / drain 232 and a second source / drain 234 are located on the dielectric layer 130 and are connected to the semiconductor layer 210 through vias O1 and O2, wherein vias O1 and O2 pass through the gate dielectric layer 120 and the dielectric layer 130. In other embodiments, the active element 200 may also be a bottom-gate thin-film transistor, a dual-gate thin-film transistor, or any other type of transistor.

[0028] A dielectric layer 130 is located on the substrate 100. In some embodiments, the dielectric layer 130 is located on the gate dielectric layer 120, and the active element 200 overlaps the dielectric layer 130. The dielectric layer 130 is located between the first source / drain 232 and the semiconductor layer 210, and between the second source / drain 234 and the semiconductor layer 210. In some embodiments, the dielectric layer 130 may also be referred to as an inter-layer dielectric (ILD).

[0029] The dielectric layer 130 may have a single-layer or multi-layer structure. For example, the dielectric layer 130 may include a first layer 132 and a second layer 134. The first layer 132 and the second layer 134 may include the same or different materials, such as silicon oxide, silicon nitride, silicon oxynitride, aluminum oxide, zirconium oxide, hafnium oxide, tantalum oxide, organic materials, combinations of the above materials, or other suitable materials.

[0030] On the normal direction ND of the top surface of the substrate 100, the dielectric layer 130 includes a first opening H1 that overlaps with the light-transmitting region TA. In some embodiments, the light-transmitting region TA overlaps with the first opening H1, and the light-shielding region SA does not overlap with the first opening H1. In some embodiments, the area of ​​the light-transmitting region TA is equal to the area of ​​the first opening H1.

[0031] By providing a first opening H1 in the light-transmitting region TA, the impact of the dielectric layer 130 on the transmittance at the light-transmitting region TA can be reduced. Furthermore, when the dielectric layer 130 comprises a relatively brittle inorganic material, forming the first opening H1 in the dielectric layer 130 in the light-transmitting region TA helps reduce the risk of cracks or delamination in the transparent display device 10A.

[0032] In some embodiments, the first opening H1 extends through the second layer 134 but not through the first layer 132. In other words, a portion of the first layer 132 remains at the bottom of the first opening H1, but this disclosure is not limited thereto. In other embodiments, the first opening H1 extends through the first layer 132. In other embodiments, the first opening H1 also extends into the gate dielectric layer 120 and the buffer layer 110; in other words, the first opening H1 exposes a portion of the top surface of the substrate 100.

[0033] A passivation layer 140 is located on the dielectric layer 130, the first source / drain 232, and the second source / drain 234. In some embodiments, the passivation layer 140 comprises an inorganic insulating material, an organic insulating material, or a combination of the above materials. In some embodiments, the passivation layer 140 comprises silicon oxide, silicon nitride, silicon oxynitride, aluminum oxide, zirconium oxide, hafnium oxide, tantalum oxide, a combination of the above materials, or other suitable materials. In some embodiments, the passivation layer 140 is a single layer or multiple layers.

[0034] In some embodiments, the passivation layer 140 includes a second opening H2 overlapping the first opening H1. By providing the second opening H2 in the light-transmitting region TA, the impact of the passivation layer 140 on the transmittance at the light-transmitting region TA can be reduced. Furthermore, when the passivation layer 140 comprises a brittle inorganic material, forming the second opening H2 in the passivation layer 140 in the light-transmitting region TA helps to reduce the risk of cracks or delamination in the transparent display device 10A.

[0035] A blue insulating layer 300 is located above the substrate 100. In some embodiments, the blue insulating layer 300 overlaps the light-transmitting region TA in the normal direction ND of the top surface of the substrate 100, and extends from the light-transmitting region TA to the light-shielding region SA to cover the active element 200. In some embodiments, the blue insulating layer 300 comprises a photoresist material or other suitable material. In some embodiments, the blue insulating layer 300 is blue by comprising pigments, dyes, and / or chromophores. The photoresist material of the blue insulating layer 300 blocks light with wavelengths from 560 nm to 610 nm, causing ambient light passing through the blue insulating layer 300 to appear blue. It should be noted that light in the above wavelength range is not necessarily completely blocked by the blue insulating layer 300, and may only be partially blocked. In the visible light wavelength range, the transmittance of the blue insulating layer 300 for light in the above wavelength range is smaller than that for the blue light wavelength range. In some embodiments, the blue insulating layer 300 has a transmittance of 80%-90% for light with wavelengths from 380 nm to 780 nm.

[0036] In some embodiments, the blue insulating layer 300 b Less than 0, for example, -10 to -3. By providing the blue insulating layer 300, the problem of the transparent display device 10A appearing yellowish overall due to the substrate 100 can be improved, thus enhancing the overall appearance of the transparent display device 10A. Closer to 0.

[0037] A blue insulating layer overlaps the second opening H2 of the passivation layer 140 and the first opening H1 of the dielectric layer 130. In some embodiments, the blue insulating layer 300 fills the second opening H2 of the passivation layer 140 and the first opening H1 of the dielectric layer 130, such that the thickness T1 of the blue insulating layer 300 in the light-transmitting region TA is greater than the thickness T2 of the blue insulating layer 300 above the active element 200. By filling the first opening H1 and the second opening H2 with the blue insulating layer 300, a thicker blue insulating layer 300 can be overlapped in the light-transmitting region TA, further correcting the color shift problem of the transparent display device 10A in the corresponding light-transmitting region TA, making the region of the transparent display device 10A in the corresponding light-transmitting region TA closer to colorless.

[0038] The pixel definition layer 160 is located on the blue insulating layer 300. In some embodiments, the pixel definition layer 160 comprises an organic insulating material.

[0039] A light-emitting diode (LED) 400A is located on a blue insulating layer 300. The LED 400A is situated within a third opening H3 of a pixel definition layer 160, and the pixel definition layer 160 surrounds the LED 400A. The LED 400A is electrically connected to an active element 200. In some embodiments, the LED 400A includes a first electrode 410, a semiconductor structure 420, and a second electrode 430, wherein the semiconductor structure 420 is located between the first electrode 410 and the second electrode 430. The first electrode 410 is electrically connected to a second source / drain 234 through a via O3 in the passivation layer 140 and a via O4 in the blue insulating layer 300, wherein the via O3 overlaps the via O4 and the second source / drain 234. In other words, the first electrode 410 of the LED 400A passes through the blue insulating layer 300 and is electrically connected to the active element 200.

[0040] In some embodiments, the semiconductor structure 420 includes organic materials; in other words, the light-emitting diode 400A is an organic light-emitting diode. However, this disclosure is not limited thereto, and the semiconductor structure 420 may also include inorganic materials. The light-emitting diode 400A may be, for example, a red light-emitting diode, a green light-emitting diode, a blue light-emitting diode, or a light-emitting diode of other colors.

[0041] In the transparent display device 10A, all film layers superimposed on the light-transmitting region TA constitute a stacked structure ST. In some embodiments, the stacked structure ST includes a substrate 100, a buffer layer 110, a gate dielectric layer 120, a dielectric layer 130, a blue insulating layer 300, and a pixel definition layer 160 superimposed on the light-transmitting region TA. The blue insulating layer 300 is used to correct the yellowish tint of the light-transmitting region TA of the substrate 100, thereby improving the brightness of the stacked structure ST. The transmittance is 3.8 to 7.2, preferably 6.0 to 7.2. In some embodiments, the stacked ST has a transmittance of 70% to 90% for light with wavelengths of 380 nm to 780 nm.

[0042] In some embodiments, compared to the blue insulating layer 300 and the substrate 100, the buffer layer 110, gate dielectric layer 120, dielectric layer 130, and pixel definition layer 160 are closer to being transparent and colorless. In other words, the buffer layer 110, gate dielectric layer 120, dielectric layer 130, and pixel definition layer 160 are closer to being transparent and colorless. Compared to the blue insulating layer 300 and the substrate 100, b Closer to 0.

[0043] Figures 2A to 2E It is manufacturing Figure 1 Cross-sectional schematic diagrams of various stages of the transparent display device 10A. Please refer to... Figure 2AA substrate 100 is provided. In some embodiments, the substrate 100 is provided on a carrier plate (not shown), which may include, for example, glass, a semiconductor material, a polymer material, or other suitable material. The carrier plate may be removed, for example, in a subsequent process.

[0044] A buffer layer 110 is deposited on the substrate 100. For example, the buffer layer 110 is formed by physical vapor deposition (PVD), chemical vapor deposition (CVD), or other suitable methods.

[0045] A semiconductor layer 210 is formed on the buffer layer 110. For example, a semiconductor material layer is first deposited by PVD, CVD or other suitable methods, and then the semiconductor material layer is patterned to form the semiconductor layer 210.

[0046] A gate dielectric layer 120 is deposited on the semiconductor layer 210 and the buffer layer 110. For example, the gate dielectric layer 120 is deposited by PVD, CVD, or other suitable methods. The gate dielectric layer 120 is located in the light-shielding region SA and the light-transmitting region TA. In other embodiments, the gate dielectric layer 120 is located only in the light-shielding region SA and not in the light-transmitting region TA.

[0047] A gate 220 is formed on the gate dielectric layer 120. For example, one or more conductive layers are deposited by PVD, CVD, electroplating, chemical plating or other suitable methods, and then the aforementioned one or more conductive layers are patterned to form the gate 220.

[0048] A dielectric layer 130 is formed on the gate dielectric layer 120 and the gate 220 by one or more deposition processes. The deposition processes include, for example, PVD, CVD or other suitable methods.

[0049] Etch dielectric layer 130 and gate dielectric layer 120 to form vias O1 and O2 that expose semiconductor layer 210.

[0050] A first source / drain 232 and a second source / drain 234 are formed on the dielectric layer 130. The first source / drain 232 and the second source / drain 234 are respectively filled into vias O1 and O2. For example, one or more conductive layers are deposited by PVD, CVD, electroplating, chemical plating or other suitable methods, and then the aforementioned one or more conductive layers are patterned to form the first source / drain 232 and the second source / drain 234.

[0051] A passivation layer 140 is deposited on the first source / drain 232, the second source / drain 234, and the dielectric layer 130. For example, the passivation layer 140 is deposited by PVD, CVD, or other suitable methods.

[0052] refer to Figure 2B The first opening H1, the second opening H2, and the through-hole O3 are formed through one or more etching processes. The projection outlines and areas of the first opening H1 and the second opening H2 on the substrate 100 are, for example, the same.

[0053] refer to Figure 2C A blue insulating layer 300 is formed on the passivation layer 140. For example, the blue insulating layer 300 is formed by spin coating, printing, or other suitable methods. In some embodiments, the blue insulating layer 300 fills the via O3 and contacts the second source / drain 234, but this disclosure is not limited thereto. In other embodiments, the via O3 may be formed in a later process so that the blue insulating layer 300 does not contact the second source / drain 234 at this stage.

[0054] refer to Figure 2D The blue insulating layer 300 is patterned to form vias O4 within it. In some embodiments, the blue insulating layer 300 comprises a photoresist material, and the method of patterning the blue insulating layer 300 includes an exposure process and a development process. In other embodiments, the method of patterning the blue insulating layer 300 includes an etching process.

[0055] In some embodiments, the blue insulating layer 300 in the via O3 is also removed at this stage, allowing the second source / drain 234 to be exposed.

[0056] refer to Figure 2E A first electrode 410 is formed on the blue insulating layer 300. The first electrode 410 fills the vias O4 of the blue insulating layer 300 and the vias O3 of the passivation layer 140, and is connected to the second source / drain 234. In some embodiments, one or more conductive layers are deposited by PVD, CVD, electroplating, chemical plating or other suitable methods, and then the aforementioned one or more conductive layers are patterned to form the first electrode 410.

[0057] A pixel definition layer 160 is formed on the blue insulating layer 300. The pixel definition layer 160 has a third opening H3 that exposes the first electrode 410.

[0058] In some embodiments, the pixel definition layer 160 includes a photoresist material, and the method of forming the pixel definition layer 160 includes the following steps: first, a photoresist material layer is formed by spin coating, printing or other suitable methods; then, the photoresist material layer is patterned by an exposure process and a development process to obtain the pixel definition layer 160.

[0059] In other embodiments, the pixel definition layer 160 comprises an inorganic insulating material, and the method of forming the pixel definition layer 160 includes depositing an insulating layer by PVD, CVD, or other suitable means. The aforementioned insulating layer is then etched to form the pixel definition layer 160.

[0060] Then return Figure 1 A semiconductor structure 420 is formed in the third opening H3. A second electrode 430 is formed on the semiconductor structure 420. In some embodiments, the second electrode extends from the semiconductor structure 420 to the top surface of the pixel definition layer 160.

[0061] Figure 3 This is a cross-sectional schematic diagram of a transparent display device 10B according to an embodiment of the present invention. It must be noted here that... Figure 3 The embodiments follow Figure 1 The component reference numerals and partial contents of the embodiments are described below, wherein the same or similar reference numerals are used to represent the same or similar components, and descriptions of the same technical content are omitted. For explanations of the omitted parts, please refer to the foregoing embodiments, and will not be repeated here.

[0062] Figure 3 Transparent display device 10B and Figure 1 The difference between the transparent display device 10A and the transparent display device 10B is that, in the active element array substrate 11B of the transparent display device 10B, the blue insulating layer 300 is used as a pixel definition layer and laterally surrounds the light-emitting diode 400A. The blue insulating layer 300 contacts the sidewall of the light-emitting diode 400A.

[0063] The active element array substrate 11B includes a substrate 100, a buffer layer 110, a gate dielectric layer 120, a dielectric layer 130, a passivation layer 140, a planarization layer 150, a blue insulating layer 300, and an active element 200.

[0064] A planarization layer 150 is located on the passivation layer 140 and fills the second opening H2 of the passivation layer 140 and the first opening H1 of the dielectric layer 130. In some embodiments, the planarization layer 150 comprises an inorganic insulating material or an organic insulating material.

[0065] The first electrode 410 is located on the planarization layer 150 and is electrically connected to the second source / drain 234 through the via O3 of the passivation layer 140 and the via O4 of the planarization layer 150, wherein the via O3 overlaps the via O4 and the second source / drain 234.

[0066] The blue insulating layer 300 is located on the planarization layer 150 and overlaps the second opening H2 of the passivation layer 140 and the first opening H1 of the dielectric layer 130. The blue insulating layer 300 extends from the light-transmitting region TA to the light-shielding region SA. In this embodiment, the blue insulating layer 300 does not fill the second opening H2 of the passivation layer 140 and the first opening H1 of the dielectric layer 130, resulting in a more uniform thickness distribution of the blue insulating layer 300.

[0067] In the transparent display device 10B, all film layers superimposed on the light-transmitting region TA constitute a stacked structure ST. In some embodiments, the stacked structure ST includes a substrate 100, a buffer layer 110, a gate dielectric layer 120, a dielectric layer 130, a planarization layer 150, and a blue insulating layer 300 superimposed on the light-transmitting region TA. The blue insulating layer 300 is used to correct the yellowish tint of the light-transmitting region TA of the substrate 100, thereby improving the b... The transmittance is 3.8 to 7.2, preferably 6.0 to 7.2. In some embodiments, the stacked ST has a transmittance of 70% to 90% for light with wavelengths of 380 nm to 780 nm.

[0068] Figure 4 This is a cross-sectional schematic diagram of a transparent display device 10C according to an embodiment of the present invention. It must be noted that... Figure 4 The embodiments follow Figure 1 The component reference numerals and partial contents of the embodiments are described below, wherein the same or similar reference numerals are used to represent the same or similar components, and descriptions of the same technical content are omitted. For explanations of the omitted parts, please refer to the foregoing embodiments, and will not be repeated here.

[0069] Figure 4 Transparent display device 10C and Figure 1 The difference between the transparent display device 10A and the transparent display device 10C is that the transparent display device 10C also includes a top cover structure 12.

[0070] Please refer to Figure 4 The upper cover structure 12 includes a black matrix 610, a filter 620, a cover layer 630, a buffer layer 640, and a cover plate 650.

[0071] The black matrix 610 overlaps with the light-shielding area SA but not with the light-transmitting area TA. The filter 620 is located within the opening of the black matrix 610 and overlaps with the light-emitting diode 400A. In some embodiments, the color of the filter 620 corresponds to the color of the light-emitting diode 400A. For example, the light-emitting diode 400A is a red light-emitting diode, and the filter 620 is a red filter; the light-emitting diode 400A is a green light-emitting diode, and the filter 620 is a green filter; or the light-emitting diode 400A is a blue light-emitting diode, and the filter 620 is a blue filter.

[0072] In some embodiments, both the blue insulating layer 300 and the filter 620 include photoresist material; however, the transmittance of the blue insulating layer 300 is greater than that of the filter 620, so that the transparent display device 10C has sufficient transmittance in the light transmission region TA.

[0073] In some embodiments, on the normal direction ND of the top surface of the substrate 100, the distance D1 between the filter 620 and the substrate 100 is greater than the distance D2 between the blue insulating layer 300 and the substrate 100.

[0074] The overlay layer 630 is located above the pixel definition layer 160 and overlaps the light-transmitting area TA.

[0075] A buffer layer 640 is located on the black matrix 610, the filter 620, and the cover layer 630. A cover plate 650 is located on the buffer layer 640. In some embodiments, the cover plate 650 includes a flexible substrate. In some embodiments, the cover plate 650 and the substrate 100 are made of the same or different materials.

[0076] In some embodiments, the active element array substrate 11A in the transparent display device 10C can also be made of Figure 3 The active element array substrate 11B is replaced. In other words, a cover structure 12 can be provided on the active element array substrate 11B.

[0077] In some embodiments, the method of manufacturing the cover structure 12 includes forming a buffer layer 640, a black matrix 610, a filter 620, and a cover layer 630 on a cover plate 650 to obtain the cover structure 12. The cover structure 12 is then bonded to an active element array substrate. In other embodiments, one or more of the black matrix 610, filter 620, cover layer 630, buffer layer 640, and cover plate 650 are formed directly on the active element array substrate.

[0078] In the transparent display device 10C, all film layers superimposed on the light-transmitting region TA constitute a stacked structure ST. In some embodiments, the stacked structure ST includes a substrate 100, a buffer layer 110, a gate dielectric layer 120, a dielectric layer 130, a blue insulating layer 300, a pixel definition layer 160, a cover layer 630, a buffer layer 640, and a cover plate 650 superimposed on the light-transmitting region TA. The blue insulating layer 300 corrects the yellowish tint of the light-transmitting region TA of the substrate 100, thereby improving the color accuracy of the stacked structure ST. The transmittance is 3.8 to 7.2, preferably 6.0 to 7.2. In some embodiments, the stacked ST has a transmittance of 70% to 90% for light with wavelengths of 380 nm to 780 nm.

[0079] Figure 5This is a cross-sectional schematic diagram of a transparent display device 10D according to an embodiment of the present invention. It must be noted that... Figure 5 The embodiments follow Figure 1 The component reference numerals and partial contents of the embodiments are described below, wherein the same or similar reference numerals are used to represent the same or similar components, and descriptions of the same technical content are omitted. For explanations of the omitted parts, please refer to the foregoing embodiments, and will not be repeated here.

[0080] Figure 5 Transparent display device 10D and Figure 1 The difference between the transparent display device 10A and the transparent display device 10D is that the blue insulating layer 300 and the light-emitting diode 400A are respectively disposed on different sides of the substrate 100.

[0081] Please refer to Figure 5 The active element array substrate 11D includes a substrate 100, a buffer layer 110, a gate dielectric layer 120, a dielectric layer 130, a passivation layer 140, a planarization layer 150, a pixel definition layer 160, a blue insulating layer 300, and active elements 200.

[0082] An active element 200 and a light-emitting diode 400A are disposed above a first side 102 of a substrate 100, while a blue insulating layer 300 is disposed on a second side 104 of the substrate 100. The first side 102 is opposite to the second side 104. The substrate 100 is located between the active element 200 and the blue insulating layer 300, and between the light-emitting diode 400A and the blue insulating layer 300.

[0083] In the transparent display device 10D, all film layers superimposed on the light-transmitting region TA constitute a stacked structure ST. In some embodiments, the stacked structure ST includes a substrate 100, a buffer layer 110, a gate dielectric layer 120, a dielectric layer 130, a planarization layer 150, a pixel definition layer 160, and a blue insulating layer 300 superimposed on the light-transmitting region TA. The blue insulating layer 300 is used to correct the yellowish tint of the light-transmitting region TA of the substrate 100, thereby improving the b... The transmittance is 3.8 to 7.2, preferably 6.0 to 7.2. In some embodiments, the stacked ST has a transmittance of 70% to 90% for light with wavelengths of 380 nm to 780 nm.

[0084] Figure 6 This is a cross-sectional schematic diagram of a light-emitting diode 400A according to an embodiment of the present invention. Please refer to... Figure 6The light-emitting diode 400A is an organic light-emitting diode and includes a first electrode 410, a semiconductor structure 420, and a second electrode 430. The semiconductor structure 420 includes a hole injection layer 422, a hole transport layer 424, a light-emitting layer 426, and an electron transport layer 428. In some embodiments, at least one of the hole injection layer 422, the hole transport layer 424, the light-emitting layer 426, and the electron transport layer 428 comprises an organic material.

[0085] Figure 7 This is a cross-sectional schematic diagram of a transparent display device 10E according to an embodiment of the present invention. It should be noted that... Figure 7 The embodiments follow Figure 1 The component reference numerals and partial contents of the embodiments are described below, wherein the same or similar reference numerals are used to represent the same or similar components, and descriptions of the same technical content are omitted. For explanations of the omitted parts, please refer to the foregoing embodiments, and will not be repeated here.

[0086] exist Figure 7 In the embodiments, the transparent display device 10E includes an active element array substrate 11E and a light-emitting diode 400B. The active element array substrate 11E includes a substrate 100, a buffer layer 110, a gate dielectric layer 120, a dielectric layer 130, a first planarization layer 182, a second planarization layer 184, a first passivation layer 191, a second passivation layer 193, a third passivation layer 195, a fourth passivation layer 197, an active element 200, a first conductive pattern layer 510, a second conductive pattern layer 520, a third conductive pattern layer 530, a first pad 542, a second pad 544, and a blue insulating layer 300.

[0087] The transparent display device 10E includes a substrate 100, a buffer layer 110, a gate dielectric layer 120, and an active element 200. Figure 1 The transparent display device 10A is described in the same way, therefore the relevant description can be found here. Figure 1 The corresponding content.

[0088] exist Figure 7 In one embodiment, dielectric layer 130 comprises a single-layer structure, but this disclosure is not limited thereto. In other embodiments, dielectric layer 130 comprises a multilayer structure.

[0089] A first planarization layer 182 is located on the dielectric layer 130 and the active element 200, and fills the first opening H1 in the dielectric layer 130. In this embodiment, the first opening H1 passes through the dielectric layer 130, allowing the first planarization layer 182 to contact the gate dielectric layer 120. In some embodiments, the first planarization layer 182 comprises an organic insulating material or an inorganic insulating material.

[0090] The first passivation layer 191 is located on the first planarization layer 182 and has a second opening H4 that overlaps the first opening H1. The first passivation layer 191 fills the through-hole O7 of the first planarization layer 182 and has a through-hole O8 that overlaps the through-hole O7.

[0091] The first conductive pattern layer 510 is located on the first passivation layer 191 and includes a conductive structure 512 and a signal line 514. The conductive structure 512 is filled into the via O7 of the first planarization layer 182 and the via O8 of the first passivation layer 191, and is electrically connected to the second source / drain 234.

[0092] The second planarization layer 184 is located on the first conductive pattern layer 510 and the first passivation layer 191, and fills the second opening H4 of the first passivation layer 191. In this embodiment, the second planarization layer 184 contacts the first planarization layer 182 through the second opening H4. In some embodiments, the second planarization layer 184 comprises an organic insulating material or an inorganic insulating material. In some embodiments, the first planarization layer 182 and the second planarization layer 184 comprise the same or similar materials, and there is no interface between the first planarization layer 182 and the second planarization layer 184. The projected outlines and areas of the first opening H1 and the second opening H4 on the substrate 100 are, for example, identical.

[0093] The second passivation layer 193 is located on the second planarization layer 184 and covers the second opening H4 of the first passivation layer 191. The second passivation layer 193 fills the through-hole O9 of the second planarization layer 184 and has a through-hole O10 overlapping the through-hole O9.

[0094] The second conductive pattern layer 520 is located on the second passivation layer 193 and includes a conductive structure 522 and a signal line 524. The conductive structure 522 is filled into the via O9 of the second planarization layer 184 and the via O10 of the second passivation layer 193, and is electrically connected to the conductive structure 512.

[0095] The blue insulating layer 300 is located on the second conductive pattern layer 520 and the second passivation layer 193, and overlaps the first opening H1 of the dielectric layer 130. The blue insulating layer 300 extends from the light-transmitting region TA to the light-shielding region SA.

[0096] The third passivation layer 195 is located on the blue insulating layer 300. The third passivation layer 195 fills the through hole O11 of the blue insulating layer 300 and has a through hole O12 overlapping the through hole O11.

[0097] The third conductive pattern layer 530 is located on the third passivation layer 195 and includes a conductive structure 532 and a signal line 534. The conductive structure 532 fills the vias O11 of the blue insulating layer 300 and the vias O12 of the third passivation layer 195, and is electrically connected to the conductive structure 522.

[0098] The fourth passivation layer 197 is located on the third conductive pattern layer 530. The fourth passivation layer 197 has a via O13 overlapping the conductive structure 532 and a via O14 overlapping the signal line 534.

[0099] Pads 542 and 544 are located on the fourth passivation layer 197. Pad 542 is connected to the conductive structure 532 through via O13, and pad 544 is connected to the signal line 534 through via O14. Pads 542 and 544 are, for example, Electroless Nickel Immersion Gold (ENIG), Electroless Nickel-Palladium Immersion Gold (ENEPIG), or other suitable materials or combinations thereof.

[0100] The light-emitting diode 400B is bonded to pads 542 and 544 via connection structures 552 and 554. Connection structures 552 and 554 are, for example, solder, conductive adhesive, or the like. In some embodiments, the light-emitting diode 400B includes a miniature light-emitting diode. At least one conductive structure 532 passes through the blue insulating layer 300 and is electrically connected between the light-emitting diode 400B and the active element 200. In this embodiment, a combination of conductive structures 512, 522, and 532 electrically connects the light-emitting diode 400B to the active element 200, and conductive structure 532 passes through the blue insulating layer 300. In this embodiment, the blue insulating layer 300 is located between the light-emitting diode 400B and the active element 200.

[0101] In the transparent display device 10E, all the film layers superimposed on the light-transmitting region TA constitute a stacked structure ST. In some embodiments, the stacked structure ST includes a substrate 100, a buffer layer 110, a gate dielectric layer 120, a first planarization layer 182, a second planarization layer 184, a second passivation layer 193, a third passivation layer 195, a fourth passivation layer 197, and a portion of a blue insulating layer 300 superimposed on the light-transmitting region TA. The blue insulating layer 300 is used to correct the yellowish tint of the light-transmitting region TA of the substrate 100, thereby improving the b... The transmittance is 3.8 to 7.2, preferably 6.0 to 7.2. In some embodiments, the stacked ST has a transmittance of 70% to 90% for light with wavelengths of 380 nm to 780 nm.

[0102] Figures 8A to 8D It is manufacturing Figure 7 Cross-sectional schematic diagrams of various stages of the transparent display device 10E. (Reference) Figure 8AA substrate 100 is provided. In some embodiments, the substrate 100 is provided on a carrier plate (not shown), which may include, for example, glass, a semiconductor material, a polymer material, or other suitable material. The carrier plate may be removed, for example, in a subsequent process.

[0103] A buffer layer 110, a semiconductor layer 210, a gate dielectric layer 120, a dielectric layer 130, a first source / drain 232, and a second source / drain 234 are formed on a substrate 100.

[0104] In some embodiments, the first opening H1, the via O1, and the via O2 can be formed by one or more etching processes. In some embodiments, the first opening H1 further extends into the gate dielectric layer 120.

[0105] refer to Figure 8B A first planarization layer 182 is formed on the dielectric layer 130. The first planarization layer 182 is patterned to form a via O7.

[0106] A first passivation layer 191 is formed on the first planarization layer 182 and in the via O7. The first passivation layer 191 is patterned to form the via O8 and the second opening H4.

[0107] A first conductive pattern layer 510 is formed on the first passivation layer 191.

[0108] A second planarization layer 184 is formed on the first conductive pattern layer 510, the first passivation layer 191, and the first planarization layer 182. The second planarization layer 184 is patterned to form a via O9.

[0109] A second passivation layer 193 is formed on the second planarization layer 184 and in the via O9. The second passivation layer 193 is patterned to form the via O10.

[0110] A second conductive pattern layer 520 is formed on the second passivation layer 193.

[0111] Please refer to Figure 8C A blue insulating layer 300 is formed on the second passivation layer 193 and the second conductive pattern layer 520. In some embodiments, the blue insulating layer 300 is formed by spin coating, printing or other suitable methods, and the blue insulating layer 300 is patterned using an exposure process and a development process to form a via O11 in the blue insulating layer 300. In other embodiments, the via O11 is formed by etching or other suitable methods.

[0112] Please refer to Figure 8D A third passivation layer 195 is formed on the blue insulating layer 300 and in the via O11. The third passivation layer 195 is patterned to form the via O12.

[0113] A third conductive pattern layer 530 is formed on the third passivation layer 195.

[0114] A fourth passivation layer 197 is formed on the third passivation layer 195 and the third conductive pattern layer 530. The fourth passivation layer 197 is patterned to form vias O13 and O14.

[0115] Pads 542 and 544 are formed in through holes O13 and O14, respectively.

[0116] Finally, back Figure 7 Connect the LED 400B to pads 542 and 544.

[0117] Figure 9 This is a top view schematic diagram of a transparent display device according to an embodiment of the present invention. Figure 9 This diagram illustrates the distribution of the light-shielding area SA and the light-transmitting area TA of a transparent display device in a top view, and the light-shielding area SA and the light-transmitting area TA of the transparent display device in any of the foregoing embodiments can be... Figure 9 The same as shown.

[0118] Please refer to Figure 9 The transparent display device includes a plurality of pixels PX, each pixel PX including a plurality of light-emitting diodes 400. The light-emitting diodes 400 are, for example, organic light-emitting diodes, micro light-emitting diodes, or other similar devices. In some embodiments, the plurality of light-emitting diodes 400 in each pixel PX include blue light-emitting diodes, red light-emitting diodes, and green light-emitting diodes, while a blue insulating layer 300 extends between and overlaps the light-emitting diodes 400 of different colors.

[0119] Signal lines, capacitors, active components, black matrices, and other opaque structures are placed on the light-shielding area SA. For simplicity, Figure 9 These structures are not displayed.

[0120] In summary, this invention uses a blue insulating layer to correct the yellowish tint in the light-transmitting area of ​​the substrate, enabling transparent display devices to be closer to colorless.

Claims

1. A transparent display device, comprising: A substrate, superimposed on a light-shielding area and a light-transmitting area; An active element is disposed in the light-shielding area but not in the light-transmitting area; A light-emitting diode is electrically connected to the active element; as well as A blue insulating layer is superimposed on the light-transmitting region, wherein all the film layers superimposed on the light-transmitting region constitute a stacked structure b. The transmittance is 3.8 to 7.2 and the transmittance for light with wavelengths of 380 nm to 780 nm is 70% to 90%.

2. The transparent display device as claimed in claim 1, wherein the blue insulating layer extends from the light-transmitting area to the light-shielding area.

3. The transparent display device as claimed in claim 1, wherein the light-emitting diode is superimposed on the blue insulating layer, and the light-emitting diode includes a red light-emitting diode or a green light-emitting diode.

4. The transparent display device of claim 1, wherein the blue insulating layer fills the opening in the dielectric layer.

5. The transparent display device of claim 1, wherein the blue insulating layer laterally surrounds the light-emitting diode.

6. The transparent display device of claim 1, wherein the blue insulating layer contacts the sidewall of the light-emitting diode.

7. The transparent display device of claim 1, wherein the electrode of the light-emitting diode passes through the blue insulating layer and is electrically connected to the active element.

8. The transparent display device as claimed in claim 1, further comprising: At least one conductive structure passes through the blue insulating layer, and the at least one conductive structure is electrically connected to the light-emitting diode to the active element.

9. The transparent display device as claimed in claim 1, further comprising: A blue filter is superimposed on the light-emitting diode, wherein the distance between the blue filter and the substrate in the normal direction of the top surface of the substrate is greater than the distance between the blue insulating layer and the substrate.

10. The transparent display device of claim 1, wherein the blue insulating layer comprises a photoresist material that blocks light with wavelengths from 560 nm to 610 nm, and the stacked structure formed by all the film layers overlapping the light-transmitting region is b. The value ranges from 6.0 to 7.

2.

11. The transparent display device of claim 1, wherein the active element and the light-emitting diode are disposed above a first side of the substrate, and the blue insulating layer is disposed on a second side of the substrate, wherein the first side is opposite to the second side.

12. An active element array substrate, comprising: A substrate, superimposed on a light-shielding area and a light-transmitting area; An active element is disposed in the light-shielding area; as well as A blue insulating layer is superimposed on the light-transmitting region, wherein all the film layers superimposed on the light-transmitting region constitute a stacked structure b. The transmittance is 3.8 to 7.2 and the transmittance for light with wavelengths of 380 nm to 780 nm is 70% to 90%.

13. A transparent display device, comprising: A substrate is superimposed on a light-shielding area and a light-transmitting area; A dielectric layer is located on the substrate and includes an opening overlapping the light-transmitting region; An active element is disposed in the light-shielding area and overlapped with the dielectric layer; A light-emitting diode is electrically connected to the active element; as well as A blue insulating layer overlaps the light-transmitting area and the opening in the dielectric layer.

14. The transparent display device of claim 13, wherein the substrate is a yellow transparent substrate, and the stacked structure formed by all the film layers overlapping the light-transmitting region is b. The values ​​range from 3.8 to 7.

2.

15. The transparent display device of claim 13, wherein the stack of all film layers overlapping the light-transmitting region has a transmittance of 70% to 90% for light with wavelengths from 380 nm to 780 nm, and the stack of all film layers overlapping the light-transmitting region has a transmittance of b The value ranges from 6.0 to 7.2.

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