Multilayer electronic component

Abstract

This disclosure provides a multilayer electronic component. An example embodiment of the multilayer electronic component according to this disclosure may include: a body including a dielectric layer and an inner electrode; and an outer electrode disposed on the body and connected to the inner electrode. The outer electrode may include: an electrode layer disposed on the body and connected to the inner electrode, and including a first conductive metal; an intermediate layer disposed on the electrode layer; and a plating layer disposed on the intermediate layer. The intermediate layer may include a second conductive metal, carbon nanotubes (CNTs), and a silicon (Si)-containing matrix.

Description

[0001] This application claims the benefit of priority to Korean Patent Application No. 10-2025-0046890, filed on April 10, 2025, with the Korean Intellectual Property Office, the entire disclosure of which is incorporated herein by reference. Technical Field

[0002] This disclosure relates to a multilayer electronic component. Background Technology

[0003] Multilayer ceramic capacitors (MLCCs, a type of multilayer electronic component) are chip capacitors mounted on printed circuit boards of various electronic devices, including video display devices such as liquid crystal displays (LCDs) and plasma display panels (PDPs), computers, smartphones and mobile phones, and on-board chargers (OBCs) and DC-DC converters for electric vehicles, for charging or discharging.

[0004] MLCCs typically include a body and external electrodes disposed on the body. The external electrodes may include an electrode layer connected to an internal electrode and a plating layer disposed on the electrode layer. The electrode layer of these external electrode structures can be damaged by acidic plating solutions, and such damage may reduce the moisture resistance reliability of the MLCC.

[0005] As an example of a method to mitigate damage to the electrode layer caused by acidic plating solutions, the method described in Patent Document 1 extends the penetration path of the solution by increasing the thickness of the electrode layer. However, since the method disclosed in Patent Document 1 forms a plating layer directly on the electrode layer, this method may not be considered a fundamental method for suppressing damage to the electrode layer caused by acidic plating solutions.

[0006] Therefore, it is necessary to improve the external electrode structure to prevent damage to the electrode layer caused by acidic plating solutions, thereby improving the moisture resistance reliability of MLCCs.

[0007] [Related Technical Documents] [Patent Documents] (Patent Document 1) KR10-2015-0112878A Summary of the Invention

[0008] One aspect of this disclosure is to protect the electrode layer from the effects of acidic plating solutions.

[0009] One aspect of this disclosure is ensuring capacitance per unit volume of a multilayer electronic component.

[0010] However, the aspects of this disclosure are not limited to the foregoing and will be more readily understood in the process of describing specific exemplary embodiments of this disclosure.

[0011] A multilayer electronic component according to an example embodiment may include: a body including a dielectric layer and an inner electrode; and an outer electrode disposed on the body and connected to the inner electrode, the outer electrode including: an electrode layer disposed on the body and connected to the inner electrode, the electrode layer including a first conductive metal; an intermediate layer disposed on the electrode layer; and a plating layer disposed on the intermediate layer, the intermediate layer including a second conductive metal, carbon nanotubes (CNTs) and a silicon (Si)-containing matrix.

[0012] One of the various effects of this disclosure is that by including an intermediate layer in the outer electrode that can protect the electrode layer from the effects of acidic plating solutions and has excellent conductivity, the moisture resistance reliability of multilayer electronic components is improved and the equivalent series resistance (ESR) is reduced.

[0013] One of the various effects of this disclosure is that even with a thin intermediate layer, the moisture resistance reliability of multilayer electronic components and the capacitance per unit volume can be fully ensured.

[0014] However, the advantages and effects of this disclosure are not limited to the foregoing and can be more readily understood in the process of describing specific exemplary embodiments of this disclosure. Attached Figure Description

[0015] The above and other aspects, features and advantages of this disclosure will become clearer from the following detailed embodiments, taken in conjunction with the accompanying drawings, in which: Figure 1 A perspective view of a multilayer electronic assembly according to an exemplary embodiment of the present disclosure is shown schematically; Figure 2 It is along Figure 1 A cross-sectional view taken from line I-I'; Figure 3 yes Figure 2 A magnified view of region P1; Figure 4 yes Figure 2 A magnified view of region P2; Figure 5 yes Figure 2 A magnified view of region P3; Figure 6 This is a schematic diagram illustrating a second conductive metal, carbon nanotubes, and a Si-containing matrix included in an electrode layer, according to an exemplary embodiment. Figure 7 It is along Figure 1 A cross-sectional view taken from line II-II'; Figure 8 This is an exploded perspective view of the main body according to the example embodiment; Figure 9 It is a cross-sectional view of a multilayer electronic assembly according to an example embodiment in a first direction and a second direction; and Figure 10 This is a cross-sectional view of a multilayer electronic assembly according to an example embodiment in a first direction and a second direction. Detailed Implementation

[0016] In the following description, exemplary embodiments of the present disclosure will be illustrated with reference to the accompanying drawings. However, exemplary embodiments of the present disclosure may be exemplified in many different forms and should not be construed as being limited to the specific embodiments set forth herein. Furthermore, the exemplary embodiments disclosed herein are provided to enable those skilled in the art to better understand the present disclosure. Therefore, in the drawings, the shape and size of elements may be exaggerated for clarity, and the same reference numerals will always be used to denote the same elements.

[0017] Furthermore, for the sake of clarity in the accompanying drawings, details irrelevant to the description have been omitted, and the disclosure is not limited thereto because the dimensions (e.g., thickness) of each component shown in the drawings are arbitrarily illustrated for ease of description. Additionally, the same reference numerals are used to describe components having the same function within the same conceptual framework. Throughout the specification, unless otherwise stated, when a part “comprises” or “includes” a component, this indicates that other components are not excluded and may be further included.

[0018] Additionally, in the accompanying drawings, the X direction may represent the thickness direction (e.g., a first direction), the Y direction may represent the length direction (e.g., a second direction), the Z direction may represent the width direction (e.g., a third direction), and the stacking direction of the inner electrode or dielectric layer may be either the thickness direction or the width direction.

[0019] Figure 1 A perspective view of a multilayer electronic assembly according to an exemplary embodiment of the present disclosure is shown schematically.

[0020] Figure 2 It is along Figure 1 The cross-sectional view taken from line I-I'.

[0021] Figure 3 yes Figure 2 A magnified view of region P1.

[0022] Figure 4 yes Figure 2 A magnified view of region P2.

[0023] Figure 5 yes Figure 2 A magnified view of region P3.

[0024] Figure 6 This is a schematic diagram illustrating a second conductive metal, carbon nanotubes, and a Si-containing matrix included in an electrode layer, according to an example embodiment.

[0025] Figure 7 It is along Figure 1 The cross-sectional view taken from line II-II'.

[0026] Figure 8 This is an exploded perspective view of the main body according to the example embodiment.

[0027] Figure 9 This is a cross-sectional view of a multilayer electronic assembly according to an example embodiment in a first direction and a second direction.

[0028] Figure 10 This is a cross-sectional view of a multilayer electronic assembly according to an example embodiment in a first direction and a second direction.

[0029] In the following text, refer to Figures 1 to 10 This document describes in detail a multilayer electronic component 100 according to exemplary embodiments of the present disclosure and various embodiments thereof. The multilayer electronic component 100 according to exemplary embodiments of the present disclosure may include: a body 110 including a dielectric layer 111 and inner electrodes 121 and 122; outer electrodes 130 and 140 disposed on the body 110 and connected to the inner electrodes 121 and 122, and the outer electrodes 130 and 140 may include: electrode layers 131 and 141 disposed on the body 110 and connected to the inner electrodes 121 and 122, and including a first conductive metal m; intermediate layers 132 and 142 disposed on the electrode layers 131 and 141; and plating layers 133, 134, 143 and 144 disposed on the intermediate layers 132 and 142, and the intermediate layers 132 and 142 may include a second conductive metal 11, carbon nanotubes 12 and a Si-containing matrix 13.

[0030] Reference Figure 2 The main body 110 includes a dielectric layer 111 and a first inner electrode 121 and a second inner electrode 122 alternately disposed with the dielectric layer 111.

[0031] Although there are no particular restrictions on the specific shape of the main body 110, however... Figure 1 As shown, the body 110 can be formed in a hexahedral shape or a similar shape. Due to the shrinkage of the ceramic powder particles included in the body 110 during the firing process, the body 110 may not be a perfect right hexahedral shape, but may have a roughly hexahedral shape.

[0032] The main body 110 may have a first surface 1 and a second surface 2 that are opposite to each other in a first direction, a third surface 3 and a fourth surface 4 that are connected to the first surface 1 and the second surface 2 and are opposite to each other in a second direction, and a fifth surface 5 and a sixth surface 6 that are connected to the first surface 1 and the second surface 2 and connected to the third surface 3 and the fourth surface 4 and are opposite to each other in a third direction.

[0033] The plurality of dielectric layers 111 forming the main body 110 are in a sintered state, and the boundaries between adjacent dielectric layers 111 may be integrated to be difficult to identify without using a Scanning Electron Microscope (SEM).

[0034] According to example embodiments of the present disclosure, the raw material included in the dielectric layer 111 is not particularly limited as long as the material can obtain sufficient electrostatic capacitance. For example, a barium titanate-based material, a lead composite perovskite-based material, or a strontium titanate-based material may be used. The barium titanate-based material may include BaTiO3-based ceramic powder particles, and examples of the BaTiO3-based ceramic powder particles may include BaTiO3 or (Ba formed by partially dissolving calcium (Ca), zirconium (Zr), etc. in BaTiO3 1-x Ca x )TiO3 (0<x<1), Ba(Ti 1-y Ca y )O3 (0<y<1), (Ba 1-x Ca x )(Ti 1-y Zr y )O3 (0<x<1, 0<y<1) or Ba(Ti 1-y Zr y )O3 (0<y<1).

[0035] Furthermore, for the purpose of the present disclosure, the raw material included in the dielectric layer 111 may be obtained by adding various ceramic additives (such as organic solvents, binders, dispersants, etc.) to powder particles such as barium titanate (BaTiO3).

[0036] In addition, since the dielectric layers 111 are in a sintered state, the ceramic powder particles of the material used for the dielectric layers 111 may form dielectric crystal grains and grain boundaries.

[0037] In addition, the average thickness td of the dielectric layers 111 is not particularly limited. For example, the average thickness td of the dielectric layers 111 may be greater than or equal to 0.2 μm and less than or equal to 2 μm, and in order to more easily achieve high capacitance and miniaturization of the multilayer electronic component 100, the average thickness td of the dielectric layers 111 may be less than or equal to 0.35 μm.

[0038] In addition, the average thickness td of the dielectric layers 111 may refer to the average thickness td of one or more of the plurality of dielectric layers 111.

[0039] The average thickness td of dielectric layer 111 can be obtained by averaging the thickness of a dielectric layer adjacent to the point where the center line of the length direction and the center line of the thickness direction of the capacitor forming portion intersects with the center line of the capacitor forming portion in the third direction, based on an image obtained by scanning a cross section of the body 110 polished to the center in the first and second directions in the third direction using a scanning electron microscope (SEM). This dielectric layer is then divided into four equal parts in the length direction, and the thicknesses measured at the 1 / 4, 2 / 4, and 3 / 4 points are averaged. The average thickness of the dielectric layer can be further generalized by extending this measurement to two upper dielectric layers and two lower dielectric layers spaced apart from each other at equal intervals, based on a dielectric layer adjacent to the point where the center line of the length direction and the center line of the thickness direction of the capacitor forming portion intersects with the center line of the capacitor forming portion.

[0040] Reference Figure 2 The inner electrodes 121 and 122 may be alternately arranged in the first direction, and the dielectric layer 111 is located between the inner electrodes 121 and 122.

[0041] The inner electrodes 121 and 122 may include a first inner electrode 121 and a second inner electrode 122. The first inner electrode 121 and the second inner electrode 122 may be alternately arranged facing each other, and a dielectric layer 111 forming the body 110 is located between the first inner electrode 121 and the second inner electrode 122. The first inner electrode 121 and the second inner electrode 122 may extend to the third surface 3 and the fourth surface 4 of the body 110, respectively. Specifically, one end of the first inner electrode 121 may extend to the third surface, and one end of the second inner electrode 122 may extend to the fourth surface. That is, in the example embodiment, the inner electrodes 121 and 122 may contact the third surface 3 and the fourth surface 4, respectively.

[0042] like Figure 2 As shown, the first inner electrode 121 may be spaced apart from the fourth surface 4 and may be exposed through the third surface 3, and the second inner electrode 122 may be spaced apart from the third surface 3 and may be exposed through the fourth surface 4. The first outer electrode 130 may be disposed on the third surface 3 of the body and may be connected to the first inner electrode 121, and the second outer electrode 140 may be disposed on the fourth surface 4 of the body and may be connected to the second inner electrode 122.

[0043] That is, the first inner electrode 121 is connected to the first outer electrode 130 instead of the second outer electrode 140, and the second inner electrode 122 is connected to the second outer electrode 140 instead of the first outer electrode 130. Therefore, the first inner electrode 121 can be spaced apart from the fourth surface 4 by a predetermined distance, and the second inner electrode 122 can be spaced apart from the third surface 3 by a predetermined distance. In this case, the first inner electrode 121 and the second inner electrode 122 can be electrically isolated from each other by a dielectric layer 111 disposed between them.

[0044] The first conductive metal m included in the inner electrodes 121 and 122 can be a metallic element with excellent conductivity. For example, the first conductive metal m can be one or more of nickel (Ni), copper (Cu), palladium (Pd), silver (Ag), gold (Au), platinum (Pt), tin (Sn), tungsten (W), and titanium (Ti).

[0045] Alternatively, the internal electrodes 121 and 122 can be formed by printing a conductive paste for the internal electrodes onto a ceramic green sheet. The conductive paste includes one or more of nickel (Ni), copper (Cu), palladium (Pd), silver (Ag), gold (Au), platinum (Pt), tin (Sn), tungsten (W), titanium (Ti), and alloys thereof. The method of printing the conductive paste for the internal electrodes can be screen printing or gravure printing, and this disclosure is not limited thereto.

[0046] Furthermore, the average thickness te of the inner electrodes 121 and 122 does not need to be particularly limited. For example, the average thickness te of the inner electrodes 121 and 122 can be greater than or equal to 0.2 μm and less than or equal to 2 μm, and in order to more easily achieve high capacitance and miniaturization of the multilayer electronic component 100, the average thickness te of the inner electrodes 121 and 122 can be less than or equal to 0.35 μm.

[0047] In addition, the average thickness te of the inner electrodes 121 and 122 can represent the average thickness te of one or more of the plurality of inner electrodes 121 and 122.

[0048] The average thickness *te* of the inner electrodes 121 and 122 can be obtained by averaging the thicknesses measured at the 1 / 4, 2 / 4, and 3 / 4 points, based on a layer of inner electrodes adjacent to the point where the center line of the capacitor forming portion intersects with the center line of the length direction and the center line of the thickness direction of the inner electrode, obtained by scanning an image of the body 110 polished to the center in the third direction using a scanning electron microscope (SEM). This is done after dividing the inner electrodes into four equal parts along the length direction. This measurement can be further generalized by extending this measurement to two upper inner electrodes and two lower inner electrodes spaced apart from each other at equal intervals, based on a layer of inner electrodes adjacent to the point where the center line of the length direction and the center line of the thickness direction of the capacitor forming portion intersect.

[0049] The main body 110 may include: a capacitor forming portion Ac, disposed within the main body 110 and forming a capacitor by means of a first inner electrode 121 and a second inner electrode 122 disposed alternately and a dielectric layer 111 between the first inner electrode 121 and the second inner electrode 122; and covering portions 112 and 113, disposed on one surface and another surface of the capacitor forming portion Ac in a first direction.

[0050] The capacitor forming section Ac can help form the capacitance of the capacitor, and as... Figure 8 As shown, the capacitor forming portion Ac can be formed by repeatedly stacking a plurality of first internal electrodes 121 and a plurality of second internal electrodes 122 and a dielectric layer 111 between the first internal electrodes 121 and the second internal electrodes 122.

[0051] Reference Figure 8 The covers 112 and 113 can be formed by stacking a single dielectric layer or two or more dielectric layers along the thickness direction on the upper and lower surfaces of the capacitor forming portion Ac, and can be mainly used to prevent damage to the internal electrode due to physical stress and / or chemical stress.

[0052] Cover portions 112 and 113 do not include internal electrodes and may include the same material as dielectric layer 111. That is, cover portions 112 and 113 may include ceramic materials, such as barium titanate (BaTiO3) based ceramic materials.

[0053] Furthermore, the average thickness tc of the covers 112 and 113 does not need to be particularly limited. However, in order to more easily achieve miniaturization and high capacitance of multilayer electronic components, the average thickness tc of the covers 112 and 113 can be less than or equal to 15 μm.

[0054] The average thickness of the covers 112 and 113 may refer to the first direction dimension, and may be obtained by averaging the first direction dimensions of the covers 112 and 113 measured at five points spaced apart from each other at equal intervals in the upper or lower part of the capacitor forming part Ac.

[0055] In an example embodiment, edge portions 114 and 115 may be disposed on one surface and another surface of the capacitor forming portion Ac in a third-direction orientation.

[0056] Reference Figure 7 Edge portions 114 and 115 may include an edge portion 114 disposed on one surface of the capacitor forming portion Ac in a third direction to form a fifth surface 5 of the body 110, and an edge portion 115 disposed on another surface of the capacitor forming portion Ac in a third direction to form a sixth surface 6. That is, edge portions 114 and 115 may be disposed on two surfaces of the capacitor forming portion Ac in a third direction (e.g., the width direction).

[0057] In addition, such as Figure 7 As shown, the edge portions 114 and 115 may refer to the regions between the two ends of the first inner electrode 121 and the second inner electrode 122 and the outer surface of the body 110.

[0058] Edges 114 and 115 are designed to prevent damage to the internal electrodes due to physical and / or chemical stress.

[0059] Edges 114 and 115 can be formed by applying conductive paste to a ceramic green sheet to form an internal electrode, applying conductive paste to the area of ​​the ceramic green sheet other than the area where the edge will be formed.

[0060] Furthermore, in order to suppress the step difference caused by the inner electrodes 121 and 122, the edge portions 114 and 115 can be formed by stacking ceramic green sheets coated with conductive paste for forming the inner electrodes 121 and 122 to form a stack, then cutting the stack such that the inner electrodes 121 and 122 are exposed to the two side surfaces of the capacitor forming portion Ac that are opposite to each other in the width direction, and then stacking a single dielectric layer or two or more dielectric layers on the two side surfaces of the capacitor forming portion Ac in a third direction (e.g., the width direction).

[0061] The widths of the edges 114 and 115 do not need to be particularly limited. However, in order to more easily realize miniaturized and high-capacitance multilayer electronic components, the average width of the edges 114 and 115 can be less than or equal to 15 μm.

[0062] The average width of the edges 114 and 115 can refer to the average dimension of the edges 114 and 115 in a third direction, and can be obtained by averaging the third-direction dimensions of the edges 114 and 115 measured at points spaced apart from each other at equal intervals on the side surface of the capacitor forming part Ac.

[0063] Reference Figure 1 External electrodes 130 and 140 can be disposed on the main body 110.

[0064] Reference Figure 1 and Figure 2 The external electrodes 130 and 140 may include: a first external electrode 130 disposed on the body 110 and connected to the first internal electrode 121; and a second external electrode 140 disposed on the body 110 and connected to the second internal electrode 122 and spaced apart from the first external electrode 130.

[0065] In this case, the first external electrode 130 and the second external electrode 140 are spaced apart from each other in the second direction.

[0066] Although this disclosure describes a multilayer electronic assembly 100 having a structure with two external electrodes 130 and 140, the number and shape of the external electrodes 130 and 140 may vary depending on the shape of the internal electrodes 121 and 122 or for other purposes.

[0067] Reference Figure 2The external electrodes 130 and 140 may include electrode layers 131 and 141 that are in contact with the third surface 3 and the fourth surface 4 of the body, and plating layers 133, 134, 143 and 144 disposed on the electrode layers.

[0068] As a more specific example of electrode layers 131 and 141, electrode layers 131 and 141 may be sintered electrodes comprising conductive metal and glass, and / or resin-based electrodes comprising conductive metal and resin.

[0069] Furthermore, electrode layers 131 and 141 can be formed by sequentially forming a sintered electrode and a resin-based electrode on the body 110. Additionally, when electrode layers 131 and 141 are resin-based electrodes, they can be formed by transferring a sheet including a conductive metal onto the body 110. When electrode layers 131 and 141 include both sintered and resin-based electrodes, a sintered electrode can be formed by applying a conductive paste including a conductive metal to the body 110 and then sintering it, and a resin electrode can be formed by transferring a sheet including a conductive metal onto the sintered electrode.

[0070] Materials with excellent electrical conductivity can be used as conductive metals included in electrode layers 131 and 141, and there are no particular limitations on such materials. For example, the conductive metal can be one or more of nickel (Ni), copper (Cu), and their alloys.

[0071] Platings 133, 134, 143, and 144 are used to improve mounting characteristics. There are no particular restrictions on the type of platings 133, 134, 143, and 144, and they can be one or more of Ni, Sn, Pd, and their alloys, and can consist of multiple layers.

[0072] For a more specific example of plating layers 133, 134, 143, and 144, plating layers 133, 134, 143, and 144 may be Ni plating layers or Sn plating layers, or may be in the form of Ni plating layers and Sn plating layers sequentially formed on electrode layers 131 and 141, or may be in the form of Sn plating layers, Ni plating layers, and Sn plating layers formed sequentially. Additionally, the plating layers may include multiple Ni plating layers and / or multiple Sn plating layers.

[0073] Typically, the outer electrodes 130 and 140 may include electrode layers 131 and 141 disposed on the body 110 and connected to the inner electrodes, and plating layers 133, 134, 143 and 144 disposed on the electrode layers 131 and 141.

[0074] Electrode layers 131 and 141 ensure electrical connectivity with inner electrodes 121 and 122, thereby ensuring the capacitance of the multilayer electronic assembly. Plating layers 133, 134, 143 and 144 enhance the sealing performance of outer electrodes 130 and 140 or improve mounting characteristics.

[0075] Furthermore, when plating layers 133, 134, 143, and 144 are formed on electrode layers 131 and 141, electrode layers 131 and 141 may be damaged by acidic plating solutions, thereby reducing the moisture resistance reliability of the multilayer electronic components. Specifically, when electrode layers 131 and 141 are sintered electrodes containing glass, the erosion of the glass can create moisture penetration paths, thus reducing the moisture resistance reliability of the multilayer electronic components. In addition, when electrode layers 131 and 141 are sintered electrodes comprising conductive metal and glass, depending on the manufacturing process, electrode layers 131 and 141 may be formed relatively thinly at the corners of the body 110, and these areas may also become vulnerable to acidic plating solutions, leading to a decrease in the moisture resistance reliability of the multilayer electronic components.

[0076] An example of a conventional approach to solving this problem is the method disclosed in Patent Document 1, which extends the water penetration path by coating electrode layers 131 and 141 with a thicker coating. However, since the method disclosed in Patent Document 1 forms a coating directly on the electrode layers, it may not be considered a fundamental method for preventing damage to the electrode layers caused by acidic plating solutions.

[0077] In contrast, in the exemplary embodiments of this disclosure, the intermediate layers 132 and 142 disposed between the electrode layers 131 and 141, including the first conductive metal m, and the plating layers 133 and 143, include a second conductive metal 11, carbon nanotubes 12 (CNTs), and a Si-containing matrix 13. This ensures that the external electrode has strong chemical resistance to acidic plating solutions, improves sealing performance, and also ensures excellent conductivity.

[0078] Reference Figure 5 and Figure 6 The intermediate layers 132 and 142 of the multilayer electronic component 100 according to an exemplary embodiment of the present disclosure may include a second conductive metal 11, a carbon nanotube 12 and a Si-containing matrix 13.

[0079] The second conductive metal 11 may be disposed within the Si-containing matrix 13 and may be used to provide conductivity to the intermediate layers 132 and 142. The type of the second conductive metal 11 is not particularly limited, but may include metals with excellent conductivity and excellent affinity for carbon nanotubes 12. Specifically, the second conductive metal 11 may be one or more of nickel (Ni), copper (Cu), palladium (Pd), silver (Ag), gold (Au), platinum (Pt), tungsten (W), iron (Fe), cobalt (Co), molybdenum (Mo), chromium (Cr), manganese (Mn), ruthenium (Ru), and rhodium (Rh). Preferably, the second conductive metal 11 may include nickel (Ni).

[0080] The Si-containing matrix 13 can be a Si-containing compound and can have a crystalline, amorphous, or mixed crystalline and amorphous structure. The Si-containing matrix 13 can refer to a Si-based material that can be composited with various materials to form composite materials.

[0081] In this disclosure, a Si-containing matrix 13 can be used to disperse carbon nanotubes 12 and enhance the mechanical strength, conductivity and resistance to plating solutions of intermediate layers 132 and 142, and the matrix 13 can exist in one or more of the following forms: single crystal, polycrystalline and amorphous.

[0082] Additionally, in the example embodiment, the Si-containing matrix 13 may be formed from a Si-containing polymer precursor, which may facilitate thinning of the intermediate layers 132 and 142.

[0083] The specific type of matrix 13 containing Si is not particularly limited, but may include one or more of SiC, SiO, SiCN and SiN.

[0084] Carbon nanotubes 12 can be disposed within a Si-containing matrix 13 and can be used to form an electrical network by contacting multiple adjacent second conductive metals 11. Carbon nanotubes 12 can form a one-dimensional structure and can transport electrons without energy loss, and when intermediate layers 132 and 142 include carbon nanotubes 12, the equivalent series resistance (ESR) of the multilayer electronic assembly 100 can be reduced.

[0085] In other words, the intermediate layers 132 and 142 of the multilayer electronic component 100 according to the exemplary embodiments of the present disclosure include a Si-containing matrix 13 to ensure chemical resistance to acidic plating solutions, and may include a second conductive metal 11 to impart conductivity to the external electrodes 130 and 140, and may include carbon nanotubes 12 to improve the conductivity imparted to the external electrodes 130 and 140.

[0086] There are no particular limitations on the methods used to determine whether the intermediate layers 132 and 142 include the second conductive metal 11, the carbon nanotubes 12, and the Si-containing matrix 13.

[0087] For example, the composition of the second conductive metal 11, carbon nanotubes 12, and Si-containing matrix 13 can be confirmed by analyzing the external electrodes 130 and 140 in the first and second direction sections polished to half-point upwards in a field emission scanning electron microscope (FE-SEM) using energy-dispersive X-ray spectroscopy (EDS) mode. First, a thinned sample for analysis is prepared in the region to be measured using a focused ion beam (FIB) device. The thinned sample is then milled with xenon (Xe) or argon (Ar) ions to remove the damaged layer on its surface. Qualitative / quantitative analysis is then performed by mapping each component to be measured from the image obtained using FE-SEM-EDS. In this case, the qualitative / quantitative analysis map of each component can be expressed as the content of each element (e.g., mass percentage (wt%), atomic percentage (at%), or molar percentage (mol%)), and the content of other specific components can be indicated for the content of a specific component.

[0088] Specifically, the presence or absence of carbon nanotube 12 can be confirmed by analyzing the d-spacing results from selected area electron diffraction (SAED) or by calculating the intensity ratio of the G peak and D peak after Raman spectroscopy analysis.

[0089] Furthermore, since the intermediate layers 132 and 142 according to the exemplary embodiments of this disclosure include a second conductive metal 11, carbon nanotubes 12, and a Si-containing matrix 13, excellent moisture-proof reliability of the multilayer electronic component 100 can be ensured even when the intermediate layers have an average thickness of less than or equal to 0.1 μm. That is, in the exemplary embodiments, when the average thickness of the intermediate layers 132 and 142 is less than or equal to 0.1 μm, moisture-proof reliability of the multilayer electronic component 100 can be ensured, and capacitance per unit volume can also be ensured.

[0090] There are no particular limitations on the method for measuring the average thickness of intermediate layers 132 and 142. For example, the magnification of an optical microscope or scanning electron microscope can be adjusted so that the entire outer electrode can be observed in a first and second direction cross-section of the multilayer electronic assembly 100 polished to a third-direction half-point. Then, the second-direction dimensions of intermediate layers 132 and 142 at the first-direction center point region on the connection portions 131a and 141a (described below) of the electrode layers, or the average value of the first-direction dimensions of intermediate layers 132 and 142 at the second-direction center point region on the strip portions 131b and 141b (described below) of the electrode layers, can be obtained and measured. Other methods and / or tools understood by those skilled in the art may be used even if not described in this disclosure.

[0091] Reference Figure 6In an example embodiment, carbon nanotubes 12 may be disposed on the surface of the second conductive metal 11. Therefore, carbon nanotubes 12 may form contact points with other carbon nanotubes 12 disposed on the surfaces of adjacent second conductive metals 11, or may be disposed close enough to conduct electricity, thereby reducing the equivalent series resistance (ESR) of the multilayer electronic component 100.

[0092] In an example embodiment, the second conductive metal 11 and the carbon nanotubes 12 may be dispersed and disposed within a Si-containing matrix 13. Specifically, the Si-containing matrix 13 may be configured to surround the second conductive metal 11, thereby forming intermediate layers 132 and 142 with improved sealing performance.

[0093] In the example embodiment, the second conductive metal 11 may exist in the form of particles with an equivalent circular diameter greater than or equal to 10 nm and less than or equal to 50 nm. That is, the second conductive metal 11 may exist in the intermediate layers 132 and 142 in the form of nanoparticles. Therefore, the conductivity of the intermediate layers 132 and 142 can be improved, and the equivalent series resistance (ESR) of the multilayer electronic component 100 can be reduced.

[0094] Furthermore, after specifying the region where the second conductive metal 11 exists in the aforementioned FE-SEM-EDS mapping image, the equivalent circle diameter of the second conductive metal 11 can be calculated using a planar method, but this disclosure is not limited thereto. Other methods and / or tools understood by those skilled in the art may be used even if not described in this disclosure.

[0095] Furthermore, the methods for forming intermediate layers 132 and 142 according to exemplary embodiments of this disclosure are not particularly limited. First, a starting material is prepared by adding a Si-containing polymer, a precursor of a second conductive metal, and, if necessary, a solvent. The starting material is then brushed onto electrode layers 131 and 141. Then, if the starting material is liquid, it is cured at approximately 200°C. If the starting material is solid, it is dried at approximately 80°C to 100°C and heat-treated (pyrolyzed) at 700°C or higher. In the starting material, the Si-containing polymer can form a Si-containing matrix through pyrolysis, the precursor of the second conductive metal can form metal nanoparticles, and the catalytic reaction of the second conductive metal can form carbon nanotubes (CNTs) on its surface.

[0096] In an example embodiment, electrode layers 131 and 141 may further include glass g. The inclusion of glass g in electrode layers 131 and 141 improves the sinterability of electrode layers 131 and 141 and reduces sintering mismatch with the body 110. However, the glass g included in electrode layers 131 and 141 may be eroded upon contact with acidic plating solutions, although the degree of erosion varies depending on its composition. This results in the formation of penetration paths for external moisture or plating solutions into the multilayer electronic assembly. However, according to an example embodiment of this disclosure, intermediate layers 132 and 142 comprising a second conductive metal 11, carbon nanotubes 12, and a Si-containing matrix 13 may be disposed between electrode layers 131 and 141 and plating layers 133 and 143, thereby effectively preventing a reduction in the moisture-proof reliability of the multilayer electronic assembly 100 due to erosion by external moisture or plating solutions.

[0097] Reference Figure 5 A gap may be formed between electrode layer 131 and body 110, and this gap may be formed due to the difference in composition between electrode layer 131 and body 110 during the sintering of outer electrodes 130 and 140, and may become the main penetration path of acidic plating solution. Therefore, in the example embodiment, intermediate layers 132 and 142 may be configured to fill the gap between electrode layers 131 and 141 and body 110, thereby further improving the moisture resistance reliability of multilayer electronic assembly 100.

[0098] To simultaneously ensure excellent conductivity and chemical resistance of intermediate layers 132 and 142, controlling the proportion of the second conductive metal 11 in intermediate layers 132 and 142 may be crucial. Therefore, in the example embodiment, the area ratio of the second conductive metal 11 to the total area of ​​intermediate layers 132 and 142 can be controlled to be greater than or equal to 20% and less than or equal to 90%, thereby ensuring both excellent conductivity and excellent chemical resistance of intermediate layers 132 and 142. When the area ratio of the second conductive metal 11 to the total area of ​​intermediate layers 132 and 142 is less than 20%, the conductivity of intermediate layers 132 and 142 will be slightly insufficient, and when the area ratio of the second conductive metal 11 to the total area of ​​intermediate layers 132 and 142 exceeds 90%, the chemical resistance of intermediate layers 132 and 142 will be slightly insufficient.

[0099] There are no particular limitations on the method used to measure the area ratio of the second conductive metal 11 to the total area of ​​the intermediate layers 132 and 142. For example, in a first and second direction cross-section of the multilayer electronic assembly 100 polished to a point 1 / 2 in the third direction, the magnification of the FE-SEM is adjusted so that the entire first or second external electrode can be observed. Then, the area occupied by the elements of the second conductive metal 11 can be calculated from the elemental analysis mapping image of the FE-SEM-EDS, and this area can be represented and measured as a ratio to the area of ​​the entire intermediate layers 132 and 142. Other methods and / or tools understood by those skilled in the art may be used even if not described in this disclosure.

[0100] Reference Figure 3 The surface of electrode layer 131 may have multiple protrusions and multiple grooves. The protrusions and grooves may be caused by stress concentration on the surface of electrode layer 131 due to the difference in thermal expansion coefficients between electrode layer 131 and the body 110, or they may be areas susceptible to acidic plating solution penetration due to microstructural defects. Therefore, in the example embodiment, intermediate layers 132 and 142 may be configured to fill the grooves of electrode layers 131 and 141, thereby further improving the moisture resistance reliability of the multilayer electronic assembly 100.

[0101] In the example embodiment, intermediate layers 132 and 142 may include amorphous carbon. Amorphous carbon may be generated during the thermal decomposition of a polymer containing Si (one of the raw materials for the intermediate layers). When intermediate layers 132 and 142 include carbon nanotubes (CNTs) and amorphous carbon as in the example embodiment, the effectiveness of this disclosure in suppressing damage to intermediate layers 132 and 142 caused by acidic plating solutions can be further improved.

[0102] The presence of amorphous carbon in the intermediate layers 132 and 142 can be confirmed by analyzing the d-spacing results of selected area electron diffraction (SAED) on the first and second direction sections of the multilayer electronic component 100 polished to half a point in the third direction, or by calculating the intensity ratio of the G peak and the D peak after Raman spectroscopy analysis, but this disclosure is not limited thereto.

[0103] Reference Figure 9 and Figure 10 According to the example embodiment, electrode layers 131 and 141 can be divided into connecting portions 131a and 141a, strip portions 131b and 141b, and corner portions 131c and 141c depending on which surface of the main body 110 the electrode layers 131 and 141 are disposed on.

[0104] Specifically, electrode layers 131 and 141 may include connecting portions 131a and 141a disposed on the third surface 3 and the fourth surface 4, strip portions 131b and 141b disposed on one or more of the first surface 1, the second surface 2, the fifth surface 5 and the sixth surface 6, and corner portions 131c and 141c connecting the connecting portions 131a and 141a to the strip portions 131b and 141b.

[0105] exist Figure 9 and Figure 10 In this context, the strips 131b and 141b refer to the regions of electrode layers 131 and 141 disposed on the first surface 1 and the second surface 2, but are not limited thereto. The regions disposed on the fifth surface 5 and the sixth surface 6 of the body 110, other than the third surface 3 and the fourth surface 4, can be defined as the strips 131b and 141b of electrode layers 131 and 141.

[0106] In addition, intermediate layers 132 and 142 are layers disposed between electrode layers 131 and 141 and plating layers 133 and 143, and when intermediate layers 132 and 142 occupy too large a proportion of the entire assembly, it may be difficult to ensure sufficient capacitance per unit volume of the multilayer electronic assembly 100.

[0107] Reference Figure 9 According to the example embodiment, intermediate layers 132 and 142 can be disposed on the connection portions 131a and 141a and the corner portions 131c and 141c of electrode layers 131 and 141, thereby improving the capacitance per unit volume of the multilayer electronic component 100. Additionally, referring to... Figure 9 According to the example embodiment, intermediate layers 132 and 142 may not be provided on strip portions 131b and 141b.

[0108] Reference Figure 10 According to the example embodiment, intermediate layers 132 and 142 can be disposed on the strip portions 131b and 141b and the corner portions 131c and 141c of electrode layers 131 and 141, thereby improving the capacitance per unit volume of the multilayer electronic assembly 100. Additionally, referring to... Figure 10 According to the example embodiment, intermediate layers 132 and 142 may not be provided on the connecting portions 131a and 141a.

[0109] Reference Figure 9 and Figure 10 Intermediate layers 132 and 142 can preferably be disposed on the corner portions 131c and 141c of electrode layers 131 and 141. Therefore, the corner portions 131c and 141c of electrode layers 131 and 141, which are relatively thinner than other areas, can be covered by intermediate layers 132 and 142, thereby further improving the moisture resistance reliability of the multilayer electronic assembly 100.

[0110] Although exemplary embodiments of this disclosure have been described in detail above, this disclosure is not limited to the above embodiments and drawings, but is defined by the appended claims. Therefore, those skilled in the art can make various substitutions, modifications, or changes without departing from the scope of this disclosure as defined by the appended claims, and such substitutions, modifications, or changes should be construed as being included within the scope of this disclosure.

[0111] Furthermore, the expression "example embodiment" as used in this disclosure does not imply the same embodiment and is provided to emphasize and explain different unique features. However, the example embodiments presented above do not preclude implementation in combination with features of another embodiment. For example, unless there is a description contrary to or contradictory to these items in another embodiment, an item described in a particular embodiment may be understood to be related to another embodiment even if it is not described in another embodiment.

[0112] In this disclosure, terminology is used only to describe particular embodiments and is not intended to limit the scope of the disclosure. Unless the context clearly indicates otherwise, the singular form may also include the plural form.

Claims

1. A multilayer electronic component, comprising: The main body includes a dielectric layer and an internal electrode; as well as An external electrode is disposed on the main body and connected to the internal electrode. The external electrode includes: An electrode layer is disposed on the body and connected to the inner electrode, the electrode layer comprising a first conductive metal; An intermediate layer is disposed on the electrode layer; and A plating layer is disposed on the intermediate layer. The intermediate layer comprises a second conductive metal, carbon nanotubes, and a Si-containing matrix.

2. The multilayer electronic component according to claim 1, wherein, The carbon nanotubes are disposed on the surface of the second conductive metal.

3. The multilayer electronic component according to claim 1, wherein, The second conductive metal and the carbon nanotubes are dispersed and disposed in the Si-containing matrix.

4. The multilayer electronic component according to claim 1, wherein, The Si-containing matrix includes one or more of SiC, SiO, SiCN, and SiN.

5. The multilayer electronic component according to claim 1, wherein, The second conductive metal is in the form of particles with an equivalent circular diameter greater than or equal to 10 nm and less than or equal to 50 nm.

6. The multilayer electronic component according to claim 1, wherein, The electrode layer also includes glass.

7. The multilayer electronic assembly according to claim 1, wherein, The intermediate layer is configured to fill the gap between the electrode layer and the body.

8. The multilayer electronic component according to claim 1, wherein, The ratio of the area of ​​the second conductive metal to the total area of ​​the intermediate layer is greater than or equal to 20% and less than or equal to 90%.

9. The multilayer electronic component according to claim 1, wherein, The intermediate layer also includes amorphous carbon.

10. The multilayer electronic assembly according to claim 1, wherein, The electrode layer has a plurality of protrusions and a plurality of grooves on its surface, and the intermediate layer is configured to fill the plurality of grooves of the electrode layer.

11. The multilayer electronic assembly according to claim 1, wherein, The main body includes a first surface and a second surface opposite to each other in a first direction, a third surface and a fourth surface opposite to each other in a second direction perpendicular to the first direction, and a fifth surface and a sixth surface opposite to each other in a third direction perpendicular to both the first and second directions. The first direction is the direction in which the dielectric layer and the internal electrode stack are aligned. The inner electrode is in contact with the third surface and the fourth surface. The electrode layer includes: The connecting portion is a region disposed on the third surface and the fourth surface; A strip portion, wherein the strip portion is a region disposed on one or more surfaces selected from the group consisting of the first surface, the second surface, the fifth surface, and the sixth surface; and The corner section connects the connecting part and the belt part.

12. The multilayer electronic assembly according to claim 11, wherein, The intermediate layer is disposed on the connecting portion and the corner portion of the electrode layer.

13. The multilayer electronic assembly according to claim 11, wherein, The intermediate layer is disposed on the strip portion and the corner portion of the electrode layer.

14. The multilayer electronic assembly according to claim 1, wherein, The average thickness of the intermediate layer is less than or equal to 0.1 μm.

15. The multilayer electronic assembly according to claim 1, wherein, The second conductive metal includes Ni.

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