Ecr plasma source and method for depositing doped thin films on a substrate using the same

Abstract

This application relates to an ECR plasma source and a method for depositing a doped thin film on a substrate using the same. The ECR plasma source includes: a vacuum chamber; an injection device configured to inject a working gas into the vacuum chamber; an emission device configured to emit electromagnetic waves; a generation device including a magnetic field generator that generates a static magnetic field in a plasma generation region to couple with the electromagnetic waves to ionize the working gas and generate plasma; a body and a cover plate, the body being configured to house the magnetic field generator and the cover plate being configured to cover the body; a metal target disposed on at least a portion of the outer surface of the cover plate; a voltage source configured to apply a negative voltage to the cover plate to attract positive ions in the plasma to bombard the metal target, such that metal atoms in the metal target are sputtered; and a substrate holding device configured to hold and move the substrate such that when the substrate is close to the plasma generation region, a doped thin film is deposited on the substrate based on the plasma and metal atoms.

Description

Technical Field

[0001] This field relates to electron cyclotron resonance (ECR) plasma sources and methods for depositing doped thin films on substrates using ECR plasma sources. Background Technology

[0002] ECR plasma sources and magnetron sputtering sources are widely used in thin film technology. ECR plasma sources can deposit thin films on substrates, such as hydrogenated amorphous carbon thin films (aC:H thin films), through plasma-enhanced chemical vapor deposition (PECVD). Magnetron sputtering sources can deposit metal-doped thin films on substrates through physical vapor deposition (PVD). Summary of the Invention

[0003] This application proposes an improved ECR plasma source and a method for depositing doped thin films on a substrate using the ECR plasma source, which can deposit doped thin films on a substrate at low cost, high efficiency and excellent quality, and can be used to form any metal-doped carbon thin film with low metal concentration (e.g., aC:H:Cr doped film) or other metal-doped thin films.

[0004] According to one aspect of this application, an ECR plasma source is provided, comprising: a vacuum chamber; an injection device configured to inject a working gas into the vacuum chamber; an emission device configured to emit electromagnetic waves toward a plasma generation region in the vacuum chamber; and a generation device comprising: a magnetic field generator disposed within the vacuum chamber, the magnetic field generator generating a static magnetic field in the plasma generation region, the static magnetic field coupling with the electromagnetic waves to satisfy an electron cyclotron resonance condition, thereby ionizing the working gas to generate plasma; a body and a cover plate, the body being configured to house the magnetic field generator, and the cover plate being configured to cover the body to enclose the magnetic field generator relative to the plasma; a metal target disposed on at least a portion of the outer surface of the cover plate; a voltage source configured to apply a negative voltage to the cover plate to attract positive ions in the plasma to bombard the metal target, such that metal atoms in the metal target are sputtered; and a substrate holding device configured to hold and move a substrate such that when the substrate is close to the plasma generation region, a doped thin film is deposited on the substrate based on the plasma and metal atoms.

[0005] According to another aspect of this application, a method for depositing a doped thin film on a substrate using an ECR plasma source is provided, comprising: turning on an injection device to inject a working gas into a vacuum chamber; turning on an emission device and a generation device to generate plasma; turning on a voltage source to apply a negative voltage to a cover plate; and bringing the substrate held on a substrate holding device close to the plasma generation region to deposit a doped thin film on the substrate based on plasma and metal atoms.

[0006] The ECR plasma source provided in this application enables the active material in the plasma to be deposited onto the substrate simultaneously in one step through a PECVD process and a PVD process, without being combined with a magnetron sputtering source.

[0007] Other features and advantages of this application will become clear from the following detailed description of exemplary embodiments with reference to the accompanying drawings. Attached Figure Description

[0008] The accompanying drawings, which form part of this specification, illustrate embodiments of this application and, together with the specification, serve to explain the principles of this application.

[0009] Figure 1 This is a schematic diagram of an ECR plasma source according to an embodiment of this application.

[0010] Figure 2 This is a perspective view of a portion of an ECR plasma source generation apparatus according to an embodiment of this application.

[0011] Figure 3 This is another perspective view of a part of an ECR plasma source generation apparatus according to an embodiment of this application.

[0012] Figure 4 This is another perspective view of a part of an ECR plasma source generation apparatus according to an embodiment of this application.

[0013] Figure 5 This is another perspective view of a part of an ECR plasma source generation apparatus according to an embodiment of this application.

[0014] Figure 6 This is another perspective view of a part of an ECR plasma source generation apparatus according to an embodiment of this application.

[0015] Figure 7 This is another perspective view of a part of an ECR plasma source generation apparatus according to an embodiment of this application.

[0016] Figure 8 This is another perspective view of a part of an ECR plasma source generation apparatus according to an embodiment of this application.

[0017] Figure 9 This is another perspective view of a part of an ECR plasma source generation apparatus according to an embodiment of this application.

[0018] Figure 10 This is another perspective view of a part of an ECR plasma source generation apparatus according to an embodiment of this application.

[0019] Figure 11 This is a three-dimensional schematic diagram of a portion of an ECR plasma source according to an embodiment of this application.

[0020] Figure 12 This is another three-dimensional schematic diagram of a portion of an ECR plasma source according to an embodiment of this application.

[0021] Figure 13 This is another three-dimensional schematic diagram of a portion of an ECR plasma source according to an embodiment of this application.

[0022] Figure 14 This is another three-dimensional schematic diagram of a portion of an ECR plasma source according to an embodiment of this application.

[0023] Figure 15 This is another three-dimensional schematic diagram of a portion of an ECR plasma source according to an embodiment of this application.

[0024] Figure 16 This is another schematic diagram of an ECR plasma source according to an embodiment of this application.

[0025] Figure 17 This is another schematic diagram of an ECR plasma source according to an embodiment of this application.

[0026] Figure 18 This is another schematic diagram of an ECR plasma source according to an embodiment of this application.

[0027] Figure 19 This is a three-dimensional schematic diagram of an ECR plasma source according to an embodiment of this application. Detailed Implementation

[0028] Various exemplary embodiments of the present application will now be described in detail with reference to the accompanying drawings. It should be noted that, unless otherwise specifically stated, the relative arrangement, numerical expressions, and values ​​of the components and steps set forth in these embodiments do not limit the scope of the present application.

[0029] Technologies and equipment known to those skilled in the art may not be discussed in detail, but where appropriate, such technologies and equipment should be considered part of the specification.

[0030] In all the examples shown and discussed herein, any specific values ​​should be interpreted as merely exemplary and not as limitations. Therefore, other examples of exemplary embodiments may have different values.

[0031] It should be noted that similar labels and letters in the following figures indicate similar items; therefore, once an item is defined in one figure, it does not need to be discussed further in subsequent figures.

[0032] The following section describes, using the example of depositing hydrogenated amorphous metal-doped carbon thin films (aC:H:Me films) and, in particular, hydrogenated amorphous carbon-chromium-doped thin films (aC:H:Cr films) on parts, especially vehicle parts, with an example ECR plasma source, to illustrate the specific configuration of the example ECR plasma source and an example method for depositing doped films on a substrate using the example ECR plasma source. That is, the substrate here can refer to a part or other object, as long as it has a surface on which the doped film is to be deposited.

[0033] Reference Figure 1 Example ECR plasma source 10 includes: a vacuum chamber 12, which can be evacuated to a vacuum by a vacuum pump 14; and an injection device 16 configured to inject a working gas into the vacuum chamber 12. For example, the working gas may include a carrier gas and a reactant gas, wherein the carrier gas is typically an inert gas, chemically stable, and does not readily react with other substances, and may include argon (Ar) and helium (He), etc. The reactant gas may include methane (CH4) or acetylene (C2H2), etc. The carrier gas and the reactant gas are typically mixed in a certain proportion. Therefore, the injection device 16 may include one or more injection ports, for example, leading to the vacuum chamber 12 via a valve.

[0034] Example ECR plasma source 10 further includes: a transmitting device 18 configured to transmit electromagnetic waves to a plasma generation region S in a vacuum chamber 12; and a generating device 20 disposed near the transmitting device 18, the generating device 20 including a magnetic field generator disposed within the vacuum chamber 12, the magnetic field generator including a permanent magnet (such as... Figures 2 to 10 The magnetic field generator, using a coil (e.g., a DC excitation coil) and / or an electromagnetic wave, generates a static magnetic field within the plasma generation region S. This static magnetic field couples with electromagnetic waves to satisfy the electron cyclotron resonance condition, thereby ionizing the working gas to generate plasma. Specifically, the static magnetic field causes electrons in the vacuum chamber 12 to cyclotron around the magnetic field lines of the static magnetic field, with an electron cyclotron frequency f. ce Defined by the following formula:

[0035]

[0036] Where e is the electron charge, B is the static magnetic field strength, and m e For electronic quality.

[0037] The transmitting device 18 may include: a waveguide and an optional antenna configured to transmit electromagnetic waves, such as microwaves or radio frequency (RF) waves, generated by an electromagnetic wave generator; and a window configured to isolate the vacuum chamber 12 from the waveguide and optional antenna while allowing electromagnetic waves to pass through the window. When the frequency of the electromagnetic wave is the same as the electron cyclotron frequency f... ce When matched, electron cyclotron resonance can be excited. That is, the coupling between the static magnetic field and the electromagnetic wave satisfies the electron cyclotron resonance condition. As a result, electrons efficiently absorb energy from the electromagnetic wave and are accelerated to a high-energy state. Electrons in the high-energy state collide with molecules or atoms in the working gas to transfer energy to the working gas. When the energy gained by the working gas exceeds its ionization energy, it ionizes to form plasma. Plasma includes active substances such as free electrons, positive ions, negative ions, free radicals, and excited-state atoms or molecules. The active substances in the plasma are further accelerated and confined within the plasma generation region S by the static magnetic field to maintain the stable state of the plasma.

[0038] The generating device 20 also includes a body 22 and a cover 24. The body 22 is configured to house the magnetic field generator, and the cover 24 is configured to cover the body 22 to enclose the magnetic field generator relative to the plasma, i.e., to prevent the magnetic field generator from being contaminated by the plasma. For example, the body 22 has a groove 26 (schematically shown as dashed lines) that matches the basic shape of the magnetic field generator and an open surface leading to the groove 26. The magnetic field generator is embedded in the groove 26 through the open surface, and then the cover 24 covers the open surface to enclose the magnetic field generator. The cover 24 may be made of a magnetically transparent (or magnetically penetrating) and conductive material. The body 22 may be selectively made of a magnetically transparent material or a magnetically shielding material, depending on the specific application.

[0039] Example ECR plasma source 10 further includes: a metal (e.g., Cr) target disposed, for example, on the outer surface of at least a portion of a cover plate 24, the outer surface of which is away from the magnetic field generator when the cover plate 24 covers the body 22; and a voltage source configured to apply a negative voltage to the cover plate 24 to attract, in particular, positive ions in the plasma to bombard the metal target, such that metal atoms in the metal target are sputtered into the plasma for inclusion. In one case, the voltage source may be directly electrically connected to the cover plate 24, and the body 22 may be non-conductive. In another case, the body 22 may be conductive and electrically connected to the cover plate 24, and therefore, the voltage source may also be electrically connected to the body 22.

[0040] It should be noted that if the voltage source does not apply a negative voltage to the cover plate 24, the example ECR plasma source 10 can be used as a general ECR plasma source to generate aC:H thin films via a PECVD process. In this paper, the Cr concentration in the aC:H:Cr doped film is low (e.g., atomic percentage at.5%), and it is required that Cr be uniformly dispersed in the aC:H matrix in the form of metal atoms or nanoparticles, rather than Cr reacting chemically with C. For this purpose, the voltage source applies an appropriate negative voltage to the cover plate 24 to attract positive ions in the plasma to bombard the metal target with appropriate acceleration, thereby sputtering an appropriate amount of metal atoms from the metal target into the plasma for physical mixing with the plasma.

[0041] Example ECR plasma source 10 also includes a substrate holding device 28 configured to hold and move substrate 30 such that when substrate 30 is close to plasma generation region S, a doped thin film is deposited on substrate 30 by means of plasma and metal atoms. Alternatively, active material (containing C and H) in plasma is deposited on substrate 30 in one step by means of PECVD process and metal atoms are deposited on substrate 30 by means of PVD process.

[0042] If a magnetron sputtering source is directly combined with a general ECR plasma source to sputter metal atoms, the metal atoms in the plasma generally have a high concentration and are prone to chemical reactions with active materials in the plasma. This is generally suitable for depositing chromium carbide (CrC) films on a substrate, but not for depositing the aforementioned aC:H:Cr doped films. In comparison, the example ECR plasma source 10 of this application is not combined with a magnetron sputtering source and can deposit aC:H:Cr doped films on substrate 30 with low cost, high efficiency, and excellent quality. It is understood that the example ECR plasma source 10 can also be used to form any metal-doped carbon film or other metal-doped films with low metal concentration.

[0043] Optionally, the example ECR plasma source 10 further includes: a support 32, the body 22 being supported by the support 32 within the vacuum chamber 12; and a cooling system (not shown) that is in direct or indirect contact with the cover plate 24 and the body 22 via the support 32. Therefore, the cover plate 24 and / or the body 22 may optionally have high thermal conductivity to facilitate the rapid transfer of heat generated by sputtering metal atoms from the metal target to the cooling system.

[0044] The following text will use permanent magnets as an example to detail various configurations of magnetic field generators. For ease of understanding, it will be combined with... Figures 2 to 12In an orthogonal coordinate system, the X-axis indicates the length direction of the permanent magnet, the Y-axis indicates the width direction, and the Z-axis indicates the height direction. That is, the length, width, and height directions of the permanent magnet are perpendicular to each other. Along the length direction, the magnet moves backward towards the origin of the orthogonal coordinate system and forward away from it; along the width direction, it moves left towards the origin and right away from it; and along the height direction, it moves downward towards the origin and upward away from it. This can be understood as... Figures 2 to 12 The permanent magnet in the configuration can also be replaced by a coil or other type of magnetic field generator, or used in combination with a coil or other type of magnetic field generator. In the first configuration, the permanent magnet may include a single permanent magnet strip 34, and the polarity direction of the single permanent magnet strip 34 may be set along the width or height direction of the permanent magnet, for example, from the south pole (S) to the north pole (N), i.e., as shown... Figure 2 As shown, the polarity direction of the single permanent magnet strip 34 is indicated by arrow A from left to right along the width direction of the permanent magnet, as... Figure 3 As shown, the polarity direction of the single permanent magnet strip 34 is indicated by arrow B from right to left along the width direction of the permanent magnet, as... Figure 4 As shown, the polarity direction of the single permanent magnet strip 34 is indicated by the arrow C from bottom to top along the height direction of the permanent magnet, and as shown in the figure. Figure 5 As shown, the polarity direction of the single permanent magnet strip 34 is indicated by the arrow D from top to bottom along the height direction of the permanent magnet. Therefore, the static magnetic field (which can be observed through...) Figures 1 to 5 The magnetic field lines (represented by the magnetic field lines) are distributed uniformly along the length of the permanent magnet so that the plasma is also distributed uniformly along the length of the permanent magnet. That is, the magnetic field generator can be a single piece (e.g., a single permanent magnet strip 34) with a polarity orientation set along its width or height.

[0045] In the second configuration, such as Figure 6As shown, the permanent magnet may include a plurality of permanent magnet blocks arranged at intervals, preferably uniformly, along the length direction of the permanent magnet. Therefore, the groove 26 includes a plurality of compartments divided, preferably uniformly, along the length direction of the permanent magnet. The plurality of permanent magnet blocks are respectively embedded in the corresponding compartments. The polarity directions of the plurality of permanent magnet blocks can be consistently set along the width or height direction of the permanent magnet. For example, the plurality of permanent magnet blocks include a first permanent magnet block 36a and a second permanent magnet block 36b. The polarity direction of the first permanent magnet block 36a is from bottom to top along the height direction of the permanent magnet, and the polarity direction of the second permanent magnet block 36b is also from bottom to top along the height direction of the permanent magnet. The first permanent magnet block 36a and the second permanent magnet block 36b may have different shapes and sizes. It should be understood that the static magnetic field (including static magnetic field strength and position) of the permanent magnet can be adjusted by adding or removing at least one of the first permanent magnet block 36a and the second permanent magnet block 36b. Alternatively or supplementarily, multiple first permanent magnet blocks 36a and multiple second permanent magnet blocks 36b can be provided, wherein the multiple first permanent magnet blocks 36a can contribute different static magnetic fields, and the multiple second permanent magnet blocks 36b can contribute different static magnetic fields. One of the first permanent magnet blocks 36a and one of the second permanent magnet blocks 36b can be selected and embedded in the body 22 according to the specific application. That is, the magnetic field generator can include multiple sub-magnetic field generators (e.g., the multiple permanent magnet blocks) spaced apart along its length direction, with the polarity directions of the multiple sub-magnetic field generators consistently set along the width or height direction of the magnetic field generator. Figures 2 to 6 In the middle, a portion of the cover plate 24 and the body 22 is removed to allow the permanent magnet to be displayed.

[0046] In the third configuration, such as Figure 7 and Figure 8 As shown, the permanent magnet may include a permanent magnet ring 38 and, for example, a permanent magnet strip 40 centrally arranged within the permanent magnet ring 38. A first polarity direction of the permanent magnet ring 38 and a second polarity direction of the permanent magnet strip 40 are provided along the height direction of the permanent magnet, with the first polarity direction being opposite to the second polarity direction. For example, if the first polarity direction is from bottom to top along the height direction of the permanent magnet, then the second polarity direction is from top to bottom along the height direction of the permanent magnet. Here, the permanent magnet ring 38 is rectangular, and the distance between the four sides of the rectangle and the permanent magnet strip 40 is substantially the same. Thus, the static magnetic field mainly covers the permanent magnet ring 38 and is uniformly distributed, so that the plasma also mainly covers the permanent magnet distribution. It is understood that the permanent magnet ring 38 can also be formed into other closed shapes, such as other types of polygons.

[0047] In other words, the magnetic field generator may include a first magnetic field generator in a ring (e.g., a permanent magnet ring 38) and a second magnetic field generator (e.g., a permanent magnet strip 40) arranged in the first magnetic field generator, wherein the first polarity direction of the first magnetic field generator and the second polarity direction of the second magnetic field generator are arranged along the height direction of the magnetic field generator and are opposite to each other.

[0048] In the fourth configuration, such as Figure 9 As shown, the permanent magnet ring 38 is enclosed by a plurality of first permanent magnet pillars 38a, 38b, 38c, and 38d arranged at intervals. The polarity directions of the plurality of first permanent magnet pillars 38a, 38b, 38c, and 38d are arranged consistently along the height direction of the permanent magnet to form the first polarity direction of the permanent magnet ring 38. In other words, the first magnetic field generator is enclosed by a plurality of first sub-magnetic field generators (e.g., the plurality of first permanent magnet pillars) arranged at intervals.

[0049] In the fifth configuration, such as Figure 10 As shown, the permanent magnet strip 40 includes a plurality of second permanent magnet pillars 40a and 40b arranged at intervals along the length or width direction of the body 22. The polarity directions of the plurality of second permanent magnet pillars 40a and 40b are uniformly arranged along the height direction of the permanent magnet to form the second polarity direction of the permanent magnet strip 40. That is, the second magnetic field generator includes a plurality of second sub-magnetic field generators (e.g., the plurality of second permanent magnet pillars) arranged at intervals along the length or width direction of the magnetic field generator.

[0050] It is understandable that the fourth and fifth configurations can be used in combination.

[0051] The static magnetic field (including static magnetic field strength and position) of the permanent magnet can be adjusted by adding or removing at least one of the plurality of first permanent magnet pillars 38a, 38b, 38c, 38d and the plurality of second permanent magnet pillars 40a, 40b. Alternatively or supplementarily, a plurality of first permanent magnet pillars 38a, 38b, 38c, 38d and a plurality of second permanent magnet pillars 40a, 40b can be provided, wherein the plurality of first permanent magnet pillars 38a, 38b, 38c, 38d can contribute different static magnetic properties, and the plurality of second permanent magnet pillars 40a, 40b can contribute different static magnetic fields. Depending on the specific application, one of the first permanent magnet pillars 38a, 38b, 38c, 38d and one of the second permanent magnet pillars 40a, 40b can be embedded in the body 22.

[0052] Compared to the first and second configurations, the third to sixth configurations can generate a larger plasma range and result in higher deposition efficiency.

[0053] exist Figures 7 to 10 In the middle, cover plate 24 is removed to allow the permanent magnet to be displayed.

[0054] In the following text, we will combine Figures 11-15 The various configurations of cover plate 24 are described in detail. It can be understood that any of the various configurations of cover plate 24 can be used in combination with any of the various configurations of magnetic field generator, such as permanent magnet.

[0055] like Figure 11 As shown, when the open surface is formed only on the first side 22a (e.g., the upper side) of the body 22, the cover plate 24 covers the body 22 on the first side 22a. Magnetic field lines of the static magnetic field generated by the permanent magnet located in the body 22 propagate through the cover plate 24 to the plasma generation region, so that plasma is generated on the first side 22a located in the plasma generation region when the transmitting device 18 emits electromagnetic waves to the plasma generation region. The second side 22b (e.g., the lower side) of the body 22 opposite to the first side 22a is covered by a magnetic shielding material (e.g., a metal such as an iron-nickel alloy) to weaken or suppress the static magnetic field on the second side 22b, thereby preventing plasma generation on the second side 22b. Therefore, the generating device 20 can generate plasma on one side only.

[0056] like Figure 12 As shown, when the open surfaces are simultaneously formed on the first side 22a and the second side 22b of the body 22, the cover plate 24 includes a first cover plate 24a and a second cover plate 24b. The plasma generation region correspondingly includes a first plasma generation region and a second plasma generation region, and the emitting device 18 correspondingly includes a first emitting device 18a and a second emitting device 18b. The first cover plate 24a covers the body 22 on the first side 22a, and the second cover plate 24b covers the body 22 on the second side 22b. Magnetic field lines of the static magnetic field generated by the permanent magnet located in the body 22 propagate through the first cover plate 24a to the first plasma generation region, until they reach the second plasma generation region and pass through the second cover plate 24b back to the permanent magnet. When the first emitting device 18a and the second emitting device 18b emit electromagnetic waves to the first plasma generation region and the second plasma generation region, respectively, plasma is generated on the first side 22a located in the first plasma generation region and plasma is generated on the second side 22b located in the second plasma generation region. Therefore, the generation device 20 can generate plasma on both sides.

[0057] like Figure 13 As shown, when the metal target is a magnetic shielding material (e.g., the metal target has high magnetic permeability), the cover plate 24 may include a first portion 42 that is opposite to the groove 26 when it covers the body 22 and a second portion 44 that is not opposite to the groove 26, wherein the metal target is disposed on the outer surface of the second portion 44 so as not to block the magnetic field lines from propagating through the first portion 42 of the cover plate 24 to the plasma generation region.

[0058] like Figure 14 As shown, optionally, the cover plate 24 includes at least a first cover plate segment 46 and a second cover plate segment 48 that are electrically isolated from each other. The metal target includes a first metal target and a second metal target. The first metal target is disposed on at least a portion of the outer surface of the first cover plate segment 46, and the second metal target is disposed on at least a portion of the outer surface of the second cover plate segment 48. When the first metal target is the same as the second metal target, the operator can selectively and promptly replace the one of the first metal target and the second metal target that is consumed more. When the first metal target is different from the second metal target, a doped thin film with more than one metal can be deposited on the substrate 30.

[0059] Additionally, the voltage source is adapted to apply a negative voltage to at least one of the first cover plate segment 46 and the second cover plate segment 48, such that metal atoms of at least one of the first metal target and the second metal target can be sputtered into the plasma. For example, as Figure 15 As shown, the voltage source can be electrically connected to the first cover plate section 46 via a first switch 50 and to the second cover plate section 48 via a second switch 52. Thus, the on / off state of the first switch 50 and the second switch 52 can be controlled via a controller that controls the various electrical components of the example ECR plasma source 10, so that at least one of the first cover plate section 46 and the second cover plate section 48 is subjected to a negative voltage. Therefore, especially when the first metal target is different from the second metal target, the type of metal atoms sputtered into the plasma can be adjusted in the doped film deposited in the same step or in doped films deposited in different steps.

[0060] Additionally, the voltage source is adapted to apply a variable negative voltage, such as a higher negative voltage, a lower negative voltage, or a continuously varying negative voltage, to at least one of the first and second cover plate sections 46 and 48, so that metal atoms from at least one of the first and second metal targets can be sputtered into the plasma at different concentrations. Thus, especially when the first metal target is different from the second metal target, the type and concentration of metal atoms sputtered into the plasma can be adjusted, allowing the type of metal atoms sputtered into the plasma to be adjusted in doped films deposited in the same step or in doped films deposited in different steps, and creating a gradient in the concentration of metal atoms in the doped film.

[0061] like Figure 16 As shown, the example ECR plasma source 10 can be applied to a mass production system, in which case the substrate holding device 28 may include a circular rotary table 54 rotatable about a central axis H. The rotary table 54 includes a plurality of holding members (not shown) evenly distributed along the circumferential direction of the rotary table 54 on its outer periphery, each holding a substrate 30 and optionally being rotatable itself. Furthermore, unlike... Figure 1 One of the generating devices 20, Figure 16 The diagram shows multiple generation devices 20 (e.g., two generation devices 20) arranged circumferentially around and near the outer periphery of the rotary stage 54. A smaller number of emitting devices 18 are provided than the multiple generation devices 20; for example, an emitting device 18 is provided between two generation devices 20. The electromagnetic waves emitted by this emitting device 18 can couple with the static magnetic field generated by the two generation devices 20 to satisfy the electron cyclotron resonance condition. The number of generation devices 20 can be less than the number of holding members. When a corresponding holding member is rotated close to the plasma generation region, or opposite the cover plate 24 of the corresponding generation device 20, a substrate 30 held by the corresponding holding member can be doped with a thin film.

[0062] like Figure 17 As shown, the substrate holding device 28 may also include an annular rotary stage 54' rotatable about a central axis H'. Similarly, the rotary stage 54' includes a plurality of holding members evenly distributed along the circumferential direction of the rotary stage 54' on its inner periphery, each holding a substrate 30 and optionally being rotatable itself. Furthermore, one or more generating devices 20 (e.g., two generating devices 20) are arranged along the circumferential direction of the rotary stage 54' outside the inner periphery of the rotary stage 54 (i.e., within the non-rotating stage region M defined by the inner periphery of the rotary stage 54') and close to the inner periphery of the rotary stage 54, and then... Figure 1 and Figure 16 The launching device 18 is provided in a similar manner as shown.

[0063] like Figure 18 As shown, one or more generating devices 20 (e.g., two generating devices 20, wherein the generating devices 20 can generate plasma on both sides) can be arranged outside the inner periphery of the rotary table 54 along the diametrical direction of the rotary table 54, and an equal number of emitting devices 18 are provided, for example, two oppositely arranged emitting devices 18 are provided between the two generating devices 20, one emitting device 18 emitting electromagnetic waves close to a first side of the body 22, and the other emitting device 18 emitting electromagnetic waves close to a second side of the body 22. In this case, a plurality of substrates 30 are arranged on the rotary table 54 such that the rotary table 54 can be rotated such that a corresponding substrate 30 is opposite one of the first cover plate 24a and the second cover plate 24b.

[0064] like Figure 19As shown, the example ECR plasma source 10 can be applied in an online production system. In this case, the substrate holding device 28 includes one or more holding members (not shown) to hold one or more substrates 30. The substrate holding device 28 is adapted to move, for example, linearly (as indicated by arrow F) along the width direction of the magnetic field generator, i.e., in a straight line, so that the one or more substrates 30 can sequentially approach and cross the plasma generation region to be “scanned” by the plasma. Thus, active materials in the plasma are simultaneously deposited onto the one or more substrates 30 in one step via a PECVD process and metal atoms via a PVD process. The generation device 20 and the emission device 18 in the online production system can be configured with reference to the generation device 20 and the emission device 18 in a batch production system.

[0065] A method for depositing a doped thin film on a substrate 30 using an example ECR plasma source 10 includes the following steps:

[0066] Turn on the injection device 16 to inject working gas into the vacuum chamber 12;

[0067] The emitting device 18 and the generating device 20 are activated to generate plasma;

[0068] Turn on the voltage source to apply a negative voltage to the cover plate 24; and

[0069] The substrate 30, held on the substrate holding device 28, is brought close to the plasma generation region S to deposit a doped thin film on the substrate 30 based on plasma and metal atoms. For example, when the example ECR plasma source 10 is used in a batch production system, the substrate 30 is brought close to the plasma generation region by rotating the rotary stages 54, 54' and positioning it opposite the cover plates 24 (e.g., the first cover plate 24a and the second cover plate 24b). For example, when the example ECR plasma source 10 is used in an in-line production system, the substrate 30 is brought close to the plasma generation region by linearly moving the substrate holding device 28 and positioning it opposite the cover plates 24 (e.g., the first cover plate 24a and the second cover plate 24b).

[0070] When the cover plate 24 includes a first cover plate segment 46 and a second cover plate segment 48, the step of turning on the voltage source to apply a negative voltage to the cover plate 24 includes: applying a negative voltage, preferably a variable negative voltage, to at least one of the first cover plate segment 46 and the second cover plate segment 48, depending on the specific application, such that metal atoms of at least one of the first metal target and the second metal target can be sputtered into the plasma.

[0071] The steps described herein are merely for illustrating the implementation process of the method and do not constitute a restriction on the order in which the steps are executed. Unless explicitly stated that there are logical or technical dependencies between certain steps, those skilled in the art will understand that the order in which these steps are executed can be adjusted, exchanged, or performed simultaneously according to actual needs. For example, some steps can be executed in parallel or in a different order without departing from the core ideas and technical scope of this invention. Therefore, any reasonable modifications or adjustments based on the method steps described in this specification should be considered to fall within the protection scope of this invention.

[0072] While specific embodiments of this application have been described in detail by way of examples, those skilled in the art should understand that the above examples are for illustrative purposes only and are not intended to limit the scope of this application. Those skilled in the art should understand that modifications can be made to the above embodiments without departing from the scope and spirit of this application. The scope of this application is defined by the appended claims.

Claims

1. An ECR plasma source (10), comprising: Vacuum chamber (12); An injection device (16) is configured to inject working gas into a vacuum chamber (12); The transmitting device (18) is configured to transmit electromagnetic waves to the plasma generation region (S) in the vacuum chamber (12); Generating apparatus (20), comprising: A magnetic field generator is installed in a vacuum chamber (12). The magnetic field generator generates a static magnetic field in the plasma generation region (S). The static magnetic field couples with electromagnetic waves to satisfy the electron cyclotron resonance condition, thereby ionizing the working gas to generate plasma. The body (22) and the cover plate (24) are configured to house the magnetic field generator and the cover plate (24) is configured to cover the body (22) to enclose the magnetic field generator relative to the plasma. A metal target is disposed on at least a portion of the outer surface of the cover plate (24); A voltage source configured to apply a negative voltage to a cover plate (24) to attract positive ions in the plasma to bombard a metal target, thereby sputtering metal atoms from the metal target; and A substrate holding device (28) is configured to hold and move the substrate (30) such that when the substrate (30) is close to the plasma generation region (S), a doped thin film is deposited on the substrate (30) based on plasma and metal atoms.

2. The ECR plasma source (10) according to claim 1 or 2, wherein, The magnetic field generator is configured as a permanent magnet or a coil.

3. The ECR plasma source (10) according to claim 1 or 2, wherein, The magnetic field generator is a single component with a polarity direction set along its width or height; or The magnetic field generator includes a plurality of sub-magnetic field generators spaced apart along its length, and the polarity directions of the plurality of sub-magnetic field generators are consistently set along the width or height direction of the magnetic field generator.

4. The ECR plasma source (10) according to claim 1 or 2, wherein, The magnetic field generator includes a first magnetic field generator in a ring and a second magnetic field generator arranged in the first magnetic field generator. The first polarity direction of the first magnetic field generator and the second polarity direction of the second magnetic field generator are set along the height direction of the magnetic field generator. The first polarity direction and the second polarity direction are opposite.

5. The ECR plasma source (10) according to claim 4, wherein, The first magnetic field generator is a single unit or encapsulated by multiple first sub-magnetic field generators arranged at intervals, and / or The second magnetic field generator is a single unit or includes multiple second sub-magnetic field generators arranged at intervals along the length or width direction of the magnetic field generator.

6. The ECR plasma source (10) according to any one of claims 1 to 5, wherein, The body (22) has a groove (26) that matches the shape of the magnetic field generator, and the cover plate (24) includes a first part (42) that is opposite to the groove (26) when it covers the body (22) and a second part (44) that is not opposite to the groove (26), wherein a metal target is disposed on the outer surface of the second part (44).

7. The ECR plasma source (10) according to claim 6, wherein, The body (22) has an open surface leading to a groove (26), through which the magnetic field generator is embedded in the groove (26), and a cover plate (24) covers the open surface to enclose the magnetic field generator relative to the plasma. Optionally, the open surface is formed on at least one of a first side (22a) and a second side (22b) opposite to the first side (22a) of the body (22).

8. The ECR plasma source (10) according to any one of claims 1 to 7, wherein, At least one of the body (22) and the cover plate (24) has high thermal conductivity.

9. The ECR plasma source (10) according to any one of claims 1 to 8, wherein, The substrate holding device (28) is adapted to move the substrate (30) in a straight line; or The substrate holding device (28) includes a rotating stage (54), a plurality of substrates (30) are arranged on the rotating stage (54), and one or more generating devices (20) and one or more emission devices (18) are arranged outside the rotating stage (54) and close to the rotating stage (54).

10. The ECR plasma source (10) according to claim 9, wherein, The rotating stage (54) is a circular rotating stage, and the plurality of substrates (30) are arranged on the outer periphery of the rotating stage. The one or more generating devices (20) and the one or more emitting devices (18) are arranged outside the outer periphery of the rotating stage and close to the outer periphery of the rotating stage along the circumferential direction of the rotating stage. or The rotating stage (54) is an annular rotating stage, and the plurality of substrates (30) are arranged on the inner periphery of the rotating stage. The one or more generating devices (20) and the one or more emitting devices (18) are arranged outside the inner periphery of the rotating stage and close to the inner periphery of the rotating stage along the circumferential or diametrical direction of the rotating stage.

11. The ECR plasma source (10) according to any one of claims 1 to 10, wherein, The cover plate (24) includes at least a first cover plate segment (46) and a second cover plate segment (48) that are electrically isolated from each other. The metal target includes a first metal target and a second metal target. The first metal target is disposed on at least a portion of the outer surface of the first cover plate segment (46), and the second metal target is disposed on at least a portion of the outer surface of the second cover plate segment (48).

12. The ECR plasma source (10) according to claim 11, wherein the voltage source is adapted to apply a negative voltage, preferably a variable negative voltage, to at least one of the first cover plate segment (46) and the second cover plate segment (48), such that metal atoms of at least one of the first metal target and the second metal target can be sputtered into the plasma.

13. A method for depositing a doped thin film on a substrate (30) using an ECR plasma source according to any one of claims 1-10, comprising: Turn on the injection device (16) to inject working gas into the vacuum chamber (12); The emitting device (18) and the generating device (20) are activated to generate plasma; Turn on the voltage source to apply a negative voltage to the cover plate (24); as well as The substrate (30) held on the substrate holding device (28) is brought close to the plasma generation region (S) to deposit a doped thin film on the substrate (30) based on plasma and metal atoms.

14. The method according to claim 13, wherein, The cover plate (24) includes at least a first cover plate segment (46) and a second cover plate segment (48) that are electrically isolated from each other. The metal target includes a first metal target and a second metal target. The first metal target is disposed on at least a portion of the outer surface of the first cover plate segment (46), and the second metal target is disposed on at least a portion of the outer surface of the second cover plate segment (48). The step of turning on the voltage source to apply a negative voltage to the cover plate (24) includes: A negative voltage, preferably a variable negative voltage, is applied to at least one of the first cover plate segment (46) and the second cover plate segment (48) such that metal atoms of at least one of the first metal target and the second metal target can be sputtered into the plasma.

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