Beam gate switch control device and electron beam exposure apparatus

Abstract

This application provides a gate switch control device and an electron beam exposure apparatus. The gate switch control device includes: a high-voltage power supply module, a control module, and an electron beam deflection module. The high-voltage power supply module continuously outputs a first high-voltage current, a second high-voltage current, and a third high-voltage current. When the control module receives a gate-off signal, it sends a first pulse signal to the electron beam deflection module. Driven by the first pulse signal, the electron beam deflection module connects to the second high-voltage current and the third high-voltage current respectively, and generates an electric field based on the voltage difference between the second high-voltage current and the third high-voltage current, causing the electron beam to be deflected under the electric field force. When the control module receives a gate-on signal, it sends a second pulse signal to the electron beam deflection module. Driven by the second pulse signal, the electron beam deflection module connects to the first high-voltage current, eliminating the electric field, so that the electron beam directly hits the stage of the electron beam exposure apparatus, thereby increasing the electron beam gate switching speed.

Description

Technical Field

[0001] This application relates to the field of electron beam exposure technology, and more specifically, to a beam gate switch control device and an electron beam exposure device. Background Technology

[0002] Electron beam lithography is a core technique in modern micro- and nano-manufacturing, boasting extremely high resolution. It is used for the development of new integrated circuits and the manufacture of small-batch devices, and is also an essential process for the fabrication of photomasks in advanced lithography machines. Among these processes, the electron beam switching system, as the core component of the electron beam lithography apparatus, has a decisive impact on the exposure resolution, patterning accuracy, and processing efficiency due to its beam gate switching speed.

[0003] Currently, electron beam gates typically consist of two parallel conductive electrode plates. One plate is connected to the driving voltage output by the gate drive unit, while the other plate is grounded. The electron beam is deflected by the electric field between the plates, thus opening and closing the electron beam gate. In this existing single-ended low-voltage drive method, where one plate is pressurized and the other is grounded, the driving voltage is usually only a few volts to tens of volts. The opening and closing speed of the gate is limited by the small driving voltage, resulting in a slow response rate. This cannot meet the stringent switching time requirements of electron beam exposure equipment, leading to poor performance of the electron beam exposure device. Summary of the Invention

[0004] The purpose of this application is to address the shortcomings of the prior art by providing a beam gate switch control device and an electron beam exposure device, so as to solve the practical problem that the slow beam gate switch speed in the prior art leads to poor performance of the electron beam exposure device.

[0005] To achieve the above objectives, the technical solutions adopted in the embodiments of this application are as follows: In a first aspect, embodiments of this application provide a clamping switch control device, comprising: a high-voltage power supply module, a control module, and an electron beam deflection module; The input terminal of the high-voltage power supply module is connected to low-voltage DC power, and the first output terminal, the second output terminal, and the third output terminal of the high-voltage power supply module can be switched to the first terminal and the second terminal of the electron beam deflection module, respectively. The control terminal of the electron beam deflection module is connected to the output terminal of the control module; The high-voltage power supply module is used to convert the low-voltage DC power into the first high-voltage power, and to perform voltage boosting and voltage reduction of the same amplitude based on the first high-voltage power, and to continuously output the second high-voltage power and the third high-voltage power. The control module is used to send a first pulse signal to the electron beam deflection module when it receives a gate shutdown signal. The electron beam deflection module is used to connect to the second high voltage and the third high voltage respectively under the drive of the first pulse signal, and generate an electric field based on the voltage difference between the second high voltage and the third high voltage, so that the electron beam is deflected under the electric field force of the electric field. The control module is also used to send a second pulse signal to the electron beam deflection module when it receives a beam gate opening signal. The electron beam deflection module is also used to connect the first high voltage under the drive of the second pulse signal to eliminate the electric field, so that the electron beam directly hits the stage of the electron beam exposure device.

[0006] As an optional implementation, the electron beam deflection module includes at least two electron beam deflection units arranged vertically. The first and second ends of each electron beam deflection unit can be switched to the first, second, and third output ends of the high-voltage power supply module, respectively. The control terminal of each electron beam deflection unit is connected to the output terminal of the control module; When the electron beam gate is turned off, the high voltage connected to the same end of two adjacent electron beam deflection units is different, so that the electric field directions of the two adjacent electron beam deflection units are opposite.

[0007] As an optional implementation, the electron beam deflection module includes: N odd-numbered electron beam deflection units and N even-numbered electron beam deflection units; When the electron beam gate is turned off, the first end of each odd number of electron beam deflection units is connected to the third high voltage, and the second end of each odd number of electron beam deflection units is connected to the second high voltage. An electric field in the first direction is generated based on the voltage difference between the third high voltage and the second high voltage, so that the electron beam undergoes a third-direction displacement deflection under the action of the electric field force of the electric field in the first direction. When the electron beam gate is turned off, the first end of each even-numbered electron beam deflection unit is connected to the second high voltage, and the second end of each even-numbered electron beam deflection unit is connected to the third high voltage. Based on the voltage difference between the second high voltage and the third high voltage, an electric field in the second direction is generated, causing the electron beam to undergo displacement deflection in the fourth direction under the action of the electric field force of the electric field in the second direction. The first direction is opposite to the second direction.

[0008] As an optional implementation, the odd-numbered electron beam deflection unit includes a first switch, a second switch, and a first set of deflection plates, wherein the first set of deflection plates includes a first plate and a second plate. The first terminal of the first switch is switchably connected to the third output terminal of the high-voltage power supply module, the second terminal of the first switch is switchably connected to the first output terminal of the high-voltage power supply module, the common terminal of the first switch is connected to the first electrode plate, and the control terminal of the first switch is connected to the output terminal of the control module. The first terminal of the second switch is switchably connected to the second output terminal of the high-voltage power supply module, the second terminal of the second switch is switchably connected to the first output terminal of the high-voltage power supply module, the common terminal of the second switch is connected to the second electrode plate, and the control terminal of the second switch is connected to the output terminal of the control module.

[0009] As an optional implementation, when the electron beam gate is turned off, the first switch is switched to the third output terminal of the high-voltage power supply module so that the first electrode plate is connected to the third high-voltage electricity, and the second switch is switched to the second output terminal of the high-voltage power supply module so that the second electrode plate is connected to the second high-voltage electricity. The first set of deflection plates generates an electric field in the first direction based on the voltage difference between the first plate and the second plate, causing the electron beam to undergo displacement deflection in the third direction under the electric field force of the electric field in the first direction. The voltage difference between the first plate and the second plate is the voltage difference between the third high voltage and the second high voltage.

[0010] As an optional implementation, when the electron beam gate is opened, the first switch is switched to the first output terminal of the high-voltage power supply module so that the first electrode plate is connected to the first high-voltage electricity, and the second switch is switched to the first output terminal of the high-voltage power supply module so that the second electrode plate is connected to the first high-voltage electricity to eliminate the electric field in the first direction.

[0011] As an optional implementation, the even-numbered electron beam deflection unit includes a third switch, a fourth switch, and a second set of deflection plates, wherein the second set of deflection plates includes a third plate and a fourth plate. The first terminal of the third switch is switchably connected to the second output terminal of the high-voltage power supply module, the second terminal of the third switch is switchably connected to the first output terminal of the high-voltage power supply module, the common terminal of the third switch is connected to the third electrode plate, and the control terminal of the third switch is connected to the output terminal of the control module. The first terminal of the fourth switch is switchably connected to the third output terminal of the high-voltage power supply module, the second terminal of the fourth switch is switchably connected to the first output terminal of the high-voltage power supply module, the common terminal of the fourth switch is connected to the fourth electrode plate, and the control terminal of the fourth switch is connected to the output terminal of the control module.

[0012] As an optional implementation, when the electron beam gate is turned off, the third switch is switched to the second output terminal of the high-voltage power supply module so that the third electrode plate is connected to the second high-voltage electricity, and the fourth switch is switched to the third output terminal of the high-voltage power supply module so that the fourth electrode plate is connected to the third high-voltage electricity. The second set of deflection plates generates an electric field in the second direction based on the voltage difference between the third and fourth plates, causing the electron beam to be deflected in the fourth direction under the electric force of the electric field in the second direction. The voltage difference between the third and fourth plates is the voltage difference between the second high voltage and the third high voltage.

[0013] As an optional implementation, when the electron beam gate is opened, the third switch is switched to the first output terminal of the high-voltage power supply module so that the third electrode plate is connected to the first high-voltage electricity, and the fourth switch is switched to the first output terminal of the high-voltage power supply module so that the fourth electrode plate is connected to the first high-voltage electricity to eliminate the electric field in the second direction.

[0014] Secondly, embodiments of this application provide an electron beam exposure apparatus, which includes at least an electron gun, a condenser lens, an electron beam shutter, and a worktable, wherein the electron beam shutter includes the beam shutter switch control device described in the first aspect above.

[0015] The beneficial effects of this application are: This application provides a beam gate switch control device and an electron beam exposure device. The beam gate switch control device includes a high-voltage power supply module, a control module, and an electron beam deflection module. The input terminal of the high-voltage power supply module is connected to low-voltage DC power. The first, second, and third output terminals are switchably connected to the first and second terminals of the electron beam deflection module, respectively. The control terminal of the electron beam deflection module is connected to the output terminal of the control module. The high-voltage power supply module converts the low-voltage DC power into a first high-voltage power, and performs voltage boosting and voltage reduction of the same amplitude based on the first high-voltage power, while continuously outputting a second and third high-voltage power. When the control module receives the beam gate off signal, it sends a first pulse signal to the electron beam deflection module. Driven by the first pulse signal, the electron beam deflection module connects to the second and third high-voltage circuits respectively, and generates an electric field based on the voltage difference between the second and third high-voltage circuits. This causes the electron beam to deflect under the electric field force. When the control module receives the beam gate open signal, it sends a second pulse signal to the electron beam deflection module. Driven by the second pulse signal, the electron beam deflection module connects to the first high-voltage circuit, eliminating the electric field and allowing the electron beam to directly hit the stage of the electron beam exposure apparatus. High-voltage floating power is supplied to both ends of the electron beam deflection module when the electron beam gate is open to quickly eliminate the electric field and increase the opening speed of the electron beam gate. High-voltage positive and negative power is supplied to both ends of the electron beam deflection module when the electron beam gate is closed to quickly form an electric field and increase the closing speed of the electron beam gate. By improving the opening and closing speeds of the electron beam gate, the performance of the electron beam exposure apparatus is improved. Attached Figure Description

[0016] To more clearly illustrate the technical solutions of the embodiments of this application, the accompanying drawings used in the embodiments will be briefly introduced below. It should be understood that the following drawings only show some embodiments of this application and should not be regarded as a limitation of the scope. For those skilled in the art, other related drawings can be obtained based on these drawings without creative effort.

[0017] Figure 1 This is a schematic diagram of the electron beam exposure apparatus provided in the embodiments of this application; Figure 2 A schematic diagram of the structure of the brake switch control device provided in the embodiments of this application. Figure 1 ; Figure 3 A schematic diagram of the structure of the brake switch control device provided in the embodiments of this application. Figure 2 ; Figure 4 A schematic diagram of the structure of the brake switch control device provided in the embodiments of this application. Figure 3 ; Figure 5 A schematic diagram of the structure of the brake switch control device provided in the embodiments of this application. Figure 4 ; Figure 6 A schematic diagram of the structure of the brake switch control device provided in the embodiments of this application. Figure 5 ; Figure 7 A schematic diagram illustrating electron beam deflection when the electron beam gate is opened, as provided in an embodiment of this application. Figure 8 This is a schematic diagram showing the direct electron beam when the electron beam gate is open, as provided in an embodiment of this application.

[0018] Reference numerals: Electron gun; 10; Condenser lens; 20; Electron beam gate; 30; Worktable; 40; High-voltage power supply module; 1; Control module; 2; Electron beam deflection module; 3; First high-voltage current: VG; Second high-voltage current: V+; Third high-voltage current: V-; Electron beam deflection unit: 31; Odd-numbered electron beam deflection unit: 32; Even-numbered electron beam deflection unit: 33; First switch: S1; Second switch: S2; Third switch: S3; Fourth switch: S4; First set of deflection plates: 321; Second set of deflection plates: 331; First plate: P1; Second plate: P2; Third plate: P3; Fourth plate: P4. Detailed Implementation

[0019] To make the objectives, technical solutions, and advantages of the embodiments of this application clearer, the technical solutions of the embodiments of this application will be clearly and completely described below with reference to the accompanying drawings. It should be understood that the accompanying drawings in this application are for illustrative and descriptive purposes only and are not intended to limit the scope of protection of this application. Furthermore, it should be understood that the schematic drawings are not drawn to scale. The flowcharts used in this application illustrate operations implemented according to some embodiments of this application. It should be understood that the operations in the flowcharts may not be implemented in sequence, and steps without logical contextual relationships may be reversed or implemented simultaneously. In addition, those skilled in the art, guided by the content of this application, may add one or more other operations to the flowcharts, or remove one or more operations from the flowcharts.

[0020] Furthermore, the described embodiments are merely some, not all, of the embodiments of this application. The components of the embodiments of this application described and illustrated herein can typically be arranged and designed in various different configurations. Therefore, the following detailed description of the embodiments of this application provided in the accompanying drawings is not intended to limit the scope of the claimed application, but merely to illustrate selected embodiments of the application. All other embodiments obtained by those skilled in the art based on the embodiments of this application without inventive effort are within the scope of protection of this application.

[0021] It should be noted that the term "comprising" will be used in the embodiments of this application to indicate the presence of the features declared thereafter, but does not exclude the addition of other features.

[0022] Currently, electron beam gates typically consist of two parallel conductive electrode plates. One plate is connected to the driving voltage output by the gate drive unit, while the other plate is grounded. The electron beam is deflected by the electric field between the plates, thus opening and closing the electron beam gate. In this existing single-ended low-voltage drive method, where one plate is pressurized and the other is grounded, the driving voltage is usually only a few volts to tens of volts. The opening and closing speed of the gate is limited by the small driving voltage, resulting in a slow response rate. This cannot meet the stringent switching time requirements of electron beam exposure equipment, leading to poor performance of the electron beam exposure device.

[0023] Based on the above-mentioned problems, this application provides a beam gate switch control device to improve the switching speed of the electron beam gate, thereby improving the performance of the electron beam exposure device.

[0024] Figure 1 This is a schematic diagram of the electron beam exposure apparatus provided in the embodiments of this application, as shown below. Figure 1 As shown, the electron beam exposure apparatus includes at least an electron gun 10, a condenser lens 20, an electron beam shutter 30, and a stage 40.

[0025] Optionally, refer to Figure 1 The electron beam exposure apparatus includes at least an electron gun 10, a condenser lens 20, an electron beam shutter 30, and a worktable 40 arranged sequentially from top to bottom.

[0026] Specifically, the electron gun 10 is located at the top of the electron beam exposure apparatus and is used to emit an electron beam to generate a high-energy, highly stable electron beam current. The condenser lens 20 is located below the electron gun 10 and is used to focus the diverging electron beam, adjust the beam spot size and beam current density of the electron beam, so as to precisely control the exposure dose and resolution of the electron beam exposure apparatus.

[0027] The electron beam shutter 30 is located between the condenser lens 20 and the stage 40 and is used to control the start and stop of exposure. The switching speed of the electron beam shutter 30 directly affects the performance of the electron beam exposure apparatus. The electron beam shutter 30 includes a shutter switch control device, which can increase the switching speed of the electron beam shutter 30, thereby improving the performance of the electron beam exposure apparatus.

[0028] The worktable 40 is located at the bottom of the electron beam exposure device and is used to place the product to be exposed. When the electron beam gate 30 is open, the electron beam shines directly onto the worktable 40 for exposure. When the electron beam gate 30 is closed, the electron beam is displaced and deflected, and cannot shine directly onto the worktable 40, thus stopping the exposure.

[0029] Figure 2A schematic diagram of the structure of the brake switch control device provided in the embodiments of this application. Figure 1 ,like Figure 2 As shown, the clamp switch control device includes: a high-voltage power supply module 1, a control module 2, and an electron beam deflection module 3; the input terminal of the high-voltage power supply module 1 is connected to low-voltage DC power, and the first output terminal, the second output terminal, and the third output terminal of the high-voltage power supply module 1 are switchably connected to the first terminal and the second terminal of the electron beam deflection module 3, respectively; the control terminal of the electron beam deflection module 3 is connected to the output terminal of the control module 2.

[0030] Optionally, refer to Figure 2 The high-voltage power supply module 1 is powered by low-voltage DC power, which can be, for example, 24V DC power. The high-voltage power supply module 1 continuously outputs a first high-voltage voltage VG, a second high-voltage voltage V+, and a third high-voltage voltage V- through a first output terminal, a second output terminal, and a third output terminal, respectively.

[0031] The first and second ends of the electron beam deflection module 3 are switchably connected to the first, second, and third output ends of the high-voltage power supply module 1, respectively. The control end of the electron beam deflection module 3 is connected to the output end of the control module 2. Under the drive of the control module 2, the electron beam deflection module 3 selectively switches the high voltage power supplied from the high-voltage power supply module 1, thereby selectively switching the presence or absence of the electric field of the electron beam deflection module 3, and finally realizing the rapid switching of the switching state of the electron beam gate 30.

[0032] The high-voltage power supply module 1 is used to convert low-voltage DC power into first high-voltage power, and to perform voltage boosting and voltage reduction of the same amplitude based on the first high-voltage power, and to continuously output second high-voltage power and third high-voltage power.

[0033] Optionally, continue to refer to Figure 2 The high-voltage power supply module 1 has an internal isolation circuit ( Figure 2 (Not shown in the image) The low-voltage DC power is converted into a first high-voltage power VG (e.g., 10KV) at the kilovolt level. Using the first high-voltage power VG as a reference, the voltage of the first high-voltage power VG is simultaneously increased and decreased by the same amplitude. The second high-voltage power V+ is obtained by increasing the voltage, and the third high-voltage power V- is obtained by decreasing the voltage. The first high-voltage power VG, the second high-voltage power V+, and the third high-voltage power V- are continuously output through the first output terminal, the second output terminal, and the third output terminal, respectively.

[0034] For example, the amplitude of voltage rise and voltage drop can be 200V. If the first high voltage VG is 10KV, then the second high voltage V+ is 10.2KV and the third high voltage V- is 9.8KV.

[0035] When the control module 2 receives the beam shut-off signal, it sends a first pulse signal to the electron beam deflection module 3. The electron beam deflection module 3 is used to connect to the second high voltage and the third high voltage under the drive of the first pulse signal, and generate an electric field based on the voltage difference between the second high voltage and the third high voltage, so that the electron beam is deflected under the action of the electric field force.

[0036] Optionally, when the control module 2 receives the beam shut-off signal, it generates a first pulse signal and sends it to the electron beam deflection module 3. Driven by the first pulse signal, the electron beam deflection module 3 is connected to the second high voltage V+ and the third high voltage V- respectively. The voltage difference formed between the second high voltage V+ and the third high voltage V- is twice the amplitude of the voltage rise and voltage fall.

[0037] For example, if the voltage rise and voltage drop are 200V, then the voltage difference between the second high voltage V+ and the third high voltage V- is 400V.

[0038] An electric field is generated based on the voltage difference between the second high voltage V+ and the third high voltage V-. The direction of the electric field is from the end of the electron beam deflection module 3 connected to the second high voltage V+ to the end of the electron beam deflection module 3 connected to the third high voltage V-.

[0039] When the electron beam emitted by the electron gun 10 enters the electric field, it is deflected by the electric field force, causing the electron beam to be unable to directly hit the stage 40, thus stopping the exposure.

[0040] The control module 2 is also used to send a second pulse signal to the electron beam deflection module 3 when it receives the beam gate opening signal. The electron beam deflection module 3 is also used to connect the first high voltage under the drive of the second pulse signal to eliminate the electric field, so that the electron beam directly hits the stage 40 of the electron beam exposure device.

[0041] Optionally, when the control module 2 receives the gate opening signal, it generates a second pulse signal and sends it to the electron beam deflection module 3. Driven by the second pulse signal, the electron beam deflection module 3 is simultaneously connected to the first high voltage VG at both ends. Since the voltage connected to both ends of the electron beam deflection module 3 is the second high voltage VG, there is no voltage difference, and the electric field is eliminated.

[0042] Since the electric field is eliminated, the electron beam emitted by the electron gun 10 will not be displaced or deflected under the electric field force, and the electron beam can be directly exposed to the stage 40 for exposure.

[0043] When the electron beam shutter 30 is opened, a high-voltage floating power supply is applied to both ends of the electron beam deflection module 3 (i.e., both ends are connected to the first high-voltage electricity VG), quickly eliminating the electric field and allowing the electron beam to directly reach the stage 40 for exposure, thus increasing the opening speed of the electron beam shutter 30. Correspondingly, when the electron beam shutter 30 is closed, a high-voltage positive and negative power supply is applied to both ends of the electron beam deflection module 3 (i.e., both ends are connected to the second high-voltage electricity V+ and the third high-voltage electricity V- respectively), quickly forming an electric field to deflect the electron beam, thus increasing the closing speed of the electron beam shutter 30. By increasing the opening and closing speeds of the electron beam shutter 30, the performance of the electron beam exposure apparatus is improved.

[0044] In this embodiment, the gate switch control device includes a high-voltage power supply module, a control module, and an electron beam deflection module. The input terminal of the high-voltage power supply module is connected to low-voltage DC power. The first, second, and third output terminals are switchably connected to the first and second terminals of the electron beam deflection module, respectively. The control terminal of the electron beam deflection module is connected to the output terminal of the control module. The high-voltage power supply module converts the low-voltage DC power into a first high-voltage power, and performs voltage boosting and voltage reduction of the same amplitude based on the first high-voltage power, while continuously outputting a second and third high-voltage power. When the control module receives the beam gate off signal, it sends a first pulse signal to the electron beam deflection module. Driven by the first pulse signal, the electron beam deflection module connects to the second and third high-voltage circuits respectively, and generates an electric field based on the voltage difference between the second and third high-voltage circuits. This causes the electron beam to deflect under the electric field force. When the control module receives the beam gate open signal, it sends a second pulse signal to the electron beam deflection module. Driven by the second pulse signal, the electron beam deflection module connects to the first high-voltage circuit, eliminating the electric field and allowing the electron beam to directly hit the stage of the electron beam exposure apparatus. High-voltage floating power is supplied to both ends of the electron beam deflection module when the electron beam gate is open to quickly eliminate the electric field and increase the opening speed of the electron beam gate. High-voltage positive and negative power is supplied to both ends of the electron beam deflection module when the electron beam gate is closed to quickly form an electric field and increase the closing speed of the electron beam gate. By improving the opening and closing speeds of the electron beam gate, the performance of the electron beam exposure apparatus is improved.

[0045] Figure 3 A schematic diagram of the structure of the brake switch control device provided in the embodiments of this application. Figure 2 ,like Figure 3 As shown, the electron beam deflection module 3 includes at least two electron beam deflection units 31 arranged vertically; the first and second ends of each electron beam deflection unit 31 are switchably connected to the first, second, and third output ends of the high-voltage power supply module 1, respectively; the control end of each electron beam deflection unit 31 is connected to the output end of the control module 2.

[0046] Optionally, refer to Figure 3The electron beam deflection module 3 includes at least two electron beam deflection units 31, and each electron beam deflection unit 31 is arranged vertically. In this embodiment, the number of electron beam deflection units 31 in the electron beam deflection module 3 is not specifically limited.

[0047] Specifically, each electron beam deflection unit 31 selectively switches the high voltage power supplied from the high voltage power supply module 1 under the drive of the pulse signal (first pulse signal or second pulse signal) sent by the control module 2, thereby selectively switching the presence or absence of the electric field of each electron beam deflection unit 31, and finally realizing the rapid switching of the switching state of the electron beam gate 30.

[0048] When the electron beam gate 30 is turned off, the high voltage connected to the same end of the two adjacent electron beam deflection units 31 is different, so that the electric field directions of the two adjacent electron beam deflection units 31 are opposite.

[0049] Optionally, continue to refer to Figure 3 When the electron beam gate 30 is turned off, different high voltages are connected to the same end of the two adjacent electron beam deflection units 31, so that the electric field directions of the two adjacent electron beam deflection units 31 are always opposite.

[0050] Specifically, with Figure 3 Taking two adjacent electron beam deflection units 31 as an example, when the electron beam gate 30 is turned off, the high-voltage power supply module 1 provides high-voltage positive and negative power to each electron beam deflection unit 31. The first end of the upper electron beam deflection unit 31 is connected to the third high-voltage electricity V-, and the second end is connected to the second high-voltage electricity V+, so that the direction of the electric field formed by the upper electron beam deflection unit 31 is the direction from the second end of the electron beam deflection unit 31 to the first end; the first end of the lower electron beam deflection unit 31 is connected to the second high-voltage electricity V+, and the second end is connected to the third high-voltage electricity V-, so that the direction of the electric field formed by the lower electron beam deflection unit 31 is the direction from the first end of the electron beam deflection unit 31 to the second end, which is completely opposite to the direction of the electric field formed by the upper electron beam deflection unit 31.

[0051] The adjacent electron beam deflection units 31 form electric fields in opposite directions, which can cause the electron beam to deflect back and forth continuously, further improving the turn-off speed of the electron beam gate 30.

[0052] Continue to refer to Figure 3 When the electron beam gate 30 is opened, the first high voltage VG is connected to both ends of each electron beam deflection unit 31 to eliminate the electric field of each electron beam deflection unit 31, so that the electron beam directly hits the work stage 40 for exposure.

[0053] In this embodiment, the electron beam deflection module includes at least two vertically arranged electron beam deflection units. The first and second ends of each electron beam deflection unit are switchably connected to the first, second, and third output ends of the high-voltage power supply module, respectively. The control end of each electron beam deflection unit is connected to the output end of the control module. When the electron beam gate is turned off, the high-voltage current connected to the same end of two adjacent electron beam deflection units is different, so that the electric field directions of the two adjacent electron beam deflection units are opposite. The vertically adjacent electron beam deflection units forming opposite electric fields allow the electron beam to deflect continuously back and forth, further improving the turn-off speed of the electron beam gate.

[0054] Figure 4 A schematic diagram of the structure of the brake switch control device provided in the embodiments of this application. Figure 3 , Figure 5 A schematic diagram of the structure of the brake switch control device provided in the embodiments of this application. Figure 4 ,like Figure 4 and Figure 5 As shown, the electron beam deflection module 3 includes N odd-numbered electron beam deflection units 32 and N even-numbered electron beam deflection units 33.

[0055] Optionally, refer to Figure 4 and Figure 5 The electron beam deflection module 3 includes N odd-numbered electron beam deflection units 32 and N even-numbered electron beam deflection units 33, where N is any integer greater than or equal to 1.

[0056] Odd-numbered electron beam deflection units 32 refer to electron beam deflection units 31 located in the electron beam deflection module 3 in an odd-numbered sequence, such as the 1st, 3rd, 5th, 7th, etc., and even-numbered electron beam deflection units 33 refer to electron beam deflection units 31 located in the electron beam deflection module 3 in an even-numbered sequence, such as the 2nd, 4th, 6th, 8th, etc.

[0057] exist Figure 4 and Figure 5 In this paper, taking the electron beam deflection module 3, which includes an odd-numbered electron beam deflection unit 32 and an even-numbered electron beam deflection unit 33, as an example, the connection relationship between the odd-numbered electron beam deflection unit 32 and the even-numbered electron beam deflection unit 33 will be explained in detail.

[0058] When the electron beam gate 30 is turned off, the first end of each odd-numbered electron beam deflection unit 32 is connected to the third high voltage, and the second end of each odd-numbered electron beam deflection unit 32 is connected to the second high voltage. Based on the voltage difference between the third high voltage and the second high voltage, an electric field in the first direction is generated, causing the electron beam to undergo a third-direction displacement deflection under the action of the electric field force of the electric field in the first direction.

[0059] Optionally, continue to refer to Figure 4When the electron beam gate 30 is turned off, each odd-numbered electron beam deflection unit 32 is driven by the first pulse signal sent by the control module 2. The first end is connected to the third high voltage V-, and the second end is connected to the second high voltage V+. The voltage difference between the first end and the second end of each odd-numbered electron beam deflection unit 32 is the voltage difference between the third high voltage V- and the second high voltage V+. The generated electric field is the electric field in the first direction, which is the direction from the second end of each odd-numbered electron beam deflection unit 32 to the first end.

[0060] When the electron beam enters the electric field in the first direction, it undergoes a displacement deflection in the third direction under the action of the electric field force in the first direction. For example, if the first direction, that is, the direction from the second end of each odd-numbered electron beam deflection unit 32 to the first end, is from right to left, then the third direction can be the lower left direction. That is, the electron beam undergoes a displacement deflection in the first direction under the action of the electric field force in the first direction, moving closer to the first end of each odd-numbered electron beam deflection unit 32.

[0061] When the electron beam gate 30 is turned off, the first end of each even-numbered electron beam deflection unit 33 is connected to the second high voltage, and the second end of each even-numbered electron beam deflection unit 33 is connected to the third high voltage. Based on the voltage difference between the second high voltage and the third high voltage, an electric field in the second direction is generated, causing the electron beam to undergo displacement deflection in the fourth direction under the action of the electric field force of the electric field in the second direction. The first direction is opposite to the second direction.

[0062] Optionally, continue to refer to Figure 4 When the electron beam gate 30 is turned off, each even-numbered electron beam deflection unit 33 is driven by the first pulse signal sent by the control module 2. The first end is connected to the second high voltage V+, and the second end is connected to the third high voltage V-. The voltage difference between the first end and the second end of each even-numbered electron beam deflection unit 33 is the voltage difference between the second high voltage V+ and the third high voltage V-. The generated electric field is the electric field in the second direction, which is the direction from the first end of each even-numbered electron beam deflection unit 33 to the second end.

[0063] When the electron beam enters the electric field in the second direction, it undergoes a displacement deflection in the fourth direction under the action of the electric field force in the second direction. For example, if the second direction, i.e., the direction from the first end of each even-numbered electron beam deflection unit 33 to the second end, is from left to right, then the fourth direction can be the lower right direction. That is, the electron beam undergoes a displacement deflection in the second direction under the action of the electric field force in the second direction, moving closer to the second end of each even-numbered electron beam deflection unit 33.

[0064] As the electron beam alternately enters the odd-numbered electron beam deflection unit 32 and the even-numbered electron beam deflection unit 33, it undergoes a third-direction displacement deflection under the electric field force of the electric field in the first direction of the odd-numbered electron beam deflection unit 32, and a fourth-direction displacement deflection under the electric field force of the electric field in the second direction of the even-numbered electron beam deflection unit 33 which is adjacent to the odd-numbered electron beam deflection unit 32. This causes the electron beam to deflect continuously back and forth when it alternately enters the adjacent odd-numbered electron beam deflection unit 32 and the even-numbered electron beam deflection unit 33, further improving the turn-off speed of the electron beam gate 30.

[0065] In this embodiment, the electron beam deflection module includes N odd-numbered electron beam deflection units and N even-numbered electron beam deflection units. When the electron beam gate is turned off, the first end of each odd-numbered electron beam deflection unit is connected to a third high-voltage current, and the second end of each odd-numbered electron beam deflection unit is connected to a second high-voltage current. An electric field in a first direction is generated based on the voltage difference between the third and second high-voltage currents, causing the electron beam to undergo a third-direction displacement deflection under the electric field force of the first-direction electric field. The first end of each even-numbered electron beam deflection unit is connected to the second high-voltage current, and the second end of each even-numbered electron beam deflection unit is connected to the third high-voltage current. An electric field in a second direction is generated based on the voltage difference between the second and third high-voltage currents, causing the electron beam to undergo a fourth-direction displacement deflection under the electric field force of the second-direction electric field. The first direction is opposite to the second direction. This allows the electron beam to deflect continuously back and forth when alternately entering adjacent odd-numbered and even-numbered electron beam deflection units, further improving the turn-off speed of the electron beam gate.

[0066] It is worth noting that, continuing to refer to Figure 5 When the electron beam gate 30 is opened, the first and second ends of each odd-numbered electron beam deflection unit 32 are connected to the first high-voltage voltage VG under the drive of the second pulse signal. There is no voltage difference between the two ends of each odd-numbered electron beam deflection unit 32, and the electric field in the first direction is eliminated. At the same time, the first and second ends of each even-numbered electron beam deflection unit 33 are also connected to the first high-voltage voltage VG under the drive of the second pulse signal. There is no voltage difference between the two ends of each even-numbered electron beam deflection unit 33, and the electric field in the second direction is eliminated. When the electron beam alternately enters the odd-numbered electron beam deflection unit 32 and the even-numbered electron beam deflection unit 33, no displacement deflection will occur, and it can be directly exposed to the worktable 40 for exposure.

[0067] By supplying high-voltage floating power to both ends of each odd-numbered electron beam deflection unit 32 and even-numbered electron beam deflection unit 33 when the electron beam gate 30 is opened, the electric field in the first direction and the electric field in the second direction are quickly eliminated, thereby further improving the opening speed of the electron beam gate 30.

[0068] Figure 6 A schematic diagram of the structure of the brake switch control device provided in the embodiments of this application. Figure 5 ,like Figure 6 As shown, the odd-numbered electron beam deflection unit 32 includes a first switch S1, a second switch S2, and a first set of deflection plates 321, which includes a first plate P1 and a second plate P2.

[0069] Optionally, refer to Figure 6 The first electrode plate P1 serves as the first end of the odd-numbered electron beam deflection unit 32 and can be switched to the third output terminal or the first output terminal of the high-voltage power supply module 1 via the first switch S1. The second electrode plate P2 serves as the second end of the odd-numbered electron beam deflection unit 32 and can be switched to the second output terminal or the first output terminal of the high-voltage power supply module 1 via the second switch S2.

[0070] For example, both the first switch S1 and the second switch S2 are single-pole double-throw switches.

[0071] The first terminal of the first switch S1 can be switched to the third output terminal of the high-voltage power supply module 1, the second terminal of the first switch S1 can be switched to the first output terminal of the high-voltage power supply module 1, the common terminal of the first switch S1 is connected to the first electrode plate P1, and the control terminal of the first switch S1 is connected to the output terminal of the control module 2.

[0072] Optionally, continue to refer to Figure 6 The first terminal of the first switch S1 can be switched to the third output terminal of the high-voltage power supply module 1, the second terminal can be switched to the first output terminal of the high-voltage power supply module 1, and the control terminal is connected to the output terminal of the control module 2, so that it can be switched to the third high-voltage voltage V- or the first high-voltage voltage VG output by the high-voltage power supply module 1 under the drive of the pulse signal output by the control module 2.

[0073] The common terminal of the first switch S1 is fixedly connected to the first electrode plate P1, so that the first electrode plate P1 can be switched to the third high voltage V- or the first high voltage VG through the first switch S1.

[0074] The first terminal of the second switch S2 can be switched to the second output terminal of the high-voltage power supply module 1, the second terminal of the second switch S2 can be switched to the first output terminal of the high-voltage power supply module 1, the common terminal of the second switch S2 is connected to the second electrode plate P2, and the control terminal of the second switch S2 is connected to the output terminal of the control module 2.

[0075] Optionally, continue to refer to Figure 6 The first end of the second switch S2 can be switched to the second output end of the high voltage power supply module 1, and the second end can be switched to the first output end of the high voltage power supply module 1. The control end is connected to the output end of the control module 2 so that it can be switched to the second high voltage V+ or the first high voltage VG output by the high voltage power supply module 1 under the drive of the pulse signal output by the control module 2.

[0076] The common terminal of the second switch S2 is fixedly connected to the second electrode plate P2, so that the second electrode plate P2 can be switched to the second high voltage V+ or the first high voltage VG through the second switch S2.

[0077] In this embodiment, the odd-numbered electron beam deflection unit includes a first switch, a second switch, and a first set of deflection plates. The first set of deflection plates includes a first plate and a second plate. The first terminal of the first switch is switchably connected to the third output terminal of the high-voltage power supply module, the second terminal is switchably connected to the first output terminal of the high-voltage power supply module, the common terminal is connected to the first plate, and the control terminal is connected to the output terminal of the control module. The first terminal of the second switch is switchably connected to the second output terminal of the high-voltage power supply module, the second terminal is switchably connected to the first output terminal of the high-voltage power supply module, the common terminal is connected to the second plate, and the control terminal of the second switch is connected to the output terminal of the control module. This allows the first plate to be switchably connected to either the third or first high-voltage power supply via the first switch, and the second plate to be switchably connected to either the second or first high-voltage power supply via the second switch.

[0078] As an optional implementation, when the electron beam gate 30 is turned off, the first switch S1 is switched to the third output terminal of the high-voltage power supply module 1 so that the first electrode plate P1 is connected to the third high voltage, and the second switch S2 is switched to the second output terminal of the high-voltage power supply module 1 so that the second electrode plate P2 is connected to the second high voltage.

[0079] Optionally, refer to Figure 6 When the electron beam gate 30 is turned off, the first switch S1 is switched to the third output terminal of the high voltage power supply module 1 under the drive of the first pulse signal, and the second switch S2 is switched to the second output terminal of the high voltage power supply module 1 under the drive of the first pulse signal, so that the first electrode plate P1 is connected to the third high voltage V- through the first switch S1, and the second electrode plate P2 is connected to the second high voltage V+ through the second switch S2.

[0080] In other words, when the electron beam gate 30 is turned off, high-voltage positive and negative power is supplied to the first set of deflection plates 321 in each odd-numbered electron beam deflection unit 32.

[0081] The first set of deflection plates 321 generates an electric field in the first direction based on the voltage difference between the first plate P1 and the second plate P2, causing the electron beam to undergo a displacement deflection in the third direction under the action of the electric field force in the first direction.

[0082] The voltage difference between the first plate P1 and the second plate P2 is the same as the voltage difference between the third high voltage and the second high voltage.

[0083] Optionally, continue to refer to Figure 6The first set of deflection plates 321 generates an electric field in the first direction based on the voltage difference between the first plate P1 and the second plate P2, i.e., the voltage difference between the third high voltage V- and the second high voltage V+. Figure 6 As shown, the first direction is the direction from the second plate P2 to the first plate P1, indicated by the red dashed arrow.

[0084] Figure 7 This is a schematic diagram of electron beam deflection when the electron beam gate 30 is opened, as provided in an embodiment of this application. (Refer to...) Figure 7 The electron beam undergoes a displacement deflection in the third direction under the action of the electric field force in the first direction. That is, the electron beam deflects towards the direction of the first electrode plate P1 during the displacement process of entering each odd number of electron beam deflection units 32.

[0085] In this embodiment, when the electron beam gate is turned off, the first switch is switched to the third output terminal of the high-voltage power supply module, so that the first electrode plate is connected to the third high-voltage electricity, and the second switch is switched to the second output terminal of the high-voltage power supply module, so that the second electrode plate is connected to the second high-voltage electricity. The first set of deflection electrodes generates an electric field in the first direction based on the voltage difference formed between the first electrode plate and the second electrode plate, so that the electron beam undergoes a third-direction displacement deflection under the action of the electric field force of the electric field in the first direction. The voltage difference formed between the first electrode plate and the second electrode plate is the voltage difference formed between the third high-voltage electricity and the second high-voltage electricity. When the electron beam gate is turned off, high-voltage positive and negative power supplies are supplied to the first set of deflection electrodes in each odd-numbered electron beam deflection unit, so that the electron beam deflects towards the first electrode plate during the displacement process of entering each odd-numbered electron beam deflection unit.

[0086] As an optional implementation, when the electron beam gate 30 is opened, the first switch S1 is switched to the first output terminal of the high-voltage power supply module 1 so that the first electrode plate P1 is connected to the first high voltage, and the second switch S2 is switched to the first output terminal of the high-voltage power supply module 1 so that the second electrode plate P2 is connected to the first high voltage, thereby eliminating the electric field in the first direction.

[0087] Optionally, continue to refer to Figure 6 When the electron beam gate 30 is opened, the first switch S1 is switched to the first output terminal of the high voltage power supply module 1 under the drive of the second pulse signal, and the second switch S2 is switched to the first output terminal of the high voltage power supply module 1 under the drive of the second pulse signal, so that the first electrode plate P1 is connected to the first high voltage VG through the first switch S1, and the second electrode plate P2 is connected to the first high voltage VG through the second switch S2.

[0088] In other words, when the electron beam gate 30 is opened, the first set of deflection plates 321 in each odd number of electron beam deflection units 32 are supplied with high voltage suspension power. Since there is no voltage difference between the first plate P1 and the second plate P2, the electric field in the first direction is quickly eliminated.

[0089] Figure 8 This is a schematic diagram showing the direct electron beam when the electron beam gate 30 is open, as provided in an embodiment of this application. (Refer to...) Figure 8 Because the electric field in the first direction is quickly eliminated, the electron beam will not be displaced or deflected when it enters each odd number of electron beam deflection units 32, thus ensuring the direct effect of the electron beam in each odd number of electron beam deflection units 32.

[0090] In this embodiment, when the electron beam gate is open, the first switch is switched to the first output terminal of the high-voltage power supply module, so that the first electrode plate is connected to the first high-voltage electricity, and the second switch is switched to the first output terminal of the high-voltage power supply module, so that the second electrode plate is connected to the first high-voltage electricity, thereby eliminating the electric field in the first direction. When the electron beam gate is open, the first set of deflection electrodes in each odd-numbered electron beam deflection unit is supplied with high-voltage floating power to improve the elimination speed of the electric field in the first direction and ensure the direct beam effect when the electron beam enters each odd-numbered electron beam deflection unit.

[0091] As an optional implementation, the even-numbered electron beam deflection unit 33 includes a third switch S3, a fourth switch S4, and a second set of deflection plates 331, the second set of deflection plates 331 including a third plate P3 and a fourth plate P4.

[0092] Optionally, continue to refer to Figure 6 The third electrode plate P3 serves as the first end of the even-numbered electron beam deflection unit 33 and can be switched to the second output end or the first output end of the high-voltage power supply module 1 via the third switch S3. The fourth electrode plate P4 serves as the second end of the even-numbered electron beam deflection unit 33 and can be switched to the third output end or the first output end of the high-voltage power supply module 1 via the fourth switch S4.

[0093] For example, both the third switch S3 and the fourth switch S4 are single-pole double-throw switches.

[0094] The first terminal of the third switch S3 can be switched to the second output terminal of the high-voltage power supply module 1, the second terminal of the third switch S3 can be switched to the first output terminal of the high-voltage power supply module 1, the common terminal of the third switch S3 is connected to the third plate P3, and the control terminal of the third switch S3 is connected to the output terminal of the control module 2.

[0095] Optionally, continue to refer to Figure 6The first terminal of the third switch S3 can be switched to the second output terminal of the high-voltage power supply module 1, and the second terminal can be switched to the first output terminal of the high-voltage power supply module 1. The control terminal is connected to the output terminal of the control module 2 so that it can be switched to the second high-voltage voltage V+ or the first high-voltage voltage VG output by the high-voltage power supply module 1 under the drive of the pulse signal output by the control module 2.

[0096] The common terminal of the third switch S3 is fixedly connected to the third plate P3, so that the third plate P3 can be switched to the second high voltage V+ or the first high voltage VG through the third switch S3.

[0097] The first terminal of the fourth switch S4 can be switched to the third output terminal of the high-voltage power supply module 1, the second terminal of the fourth switch S4 can be switched to the first output terminal of the high-voltage power supply module 1, the common terminal of the fourth switch S4 is connected to the fourth electrode plate P4, and the control terminal of the fourth switch S4 is connected to the output terminal of the control module 2.

[0098] Optionally, continue to refer to Figure 6 The first end of the fourth switch S4 can be switched to the third output end of the high-voltage power supply module 1, the second end can be switched to the first output end of the high-voltage power supply module 1, and the control end is connected to the output end of the control module 2, so that it can be switched to the third high-voltage voltage V- or the first high-voltage voltage VG output by the high-voltage power supply module 1 under the drive of the pulse signal output by the control module 2.

[0099] The common terminal of the fourth switch S4 is fixedly connected to the fourth plate P4, so that the fourth plate P4 can be switched to the third high voltage V- or the first high voltage VG through the fourth switch S4.

[0100] In this embodiment, the even-numbered electron beam deflection unit includes a third switch, a fourth switch, and a second set of deflection plates. The second set of deflection plates includes a third plate and a fourth plate. The first terminal of the third switch is switchably connected to the second output terminal of the high-voltage power supply module, and the second terminal is switchably connected to the first output terminal of the high-voltage power supply module. The common terminal is connected to the third plate, and the control terminal is connected to the output terminal of the control module. The first terminal of the fourth switch is switchably connected to the third output terminal of the high-voltage power supply module, and the second terminal is switchably connected to the first output terminal of the high-voltage power supply module. The common terminal is connected to the fourth plate, and the control terminal is connected to the output terminal of the control module. This allows the third plate to be switched between the second and first high-voltage electricity via the third switch, and the fourth plate to be switched between the third and first high-voltage electricity via the fourth switch.

[0101] As an optional implementation, when the electron beam gate 30 is turned off, the third switch S3 is switched to the second output terminal of the high-voltage power supply module 1 so that the third electrode plate P3 is connected to the second high voltage, and the fourth switch S4 is switched to the third output terminal of the high-voltage power supply module 1 so that the fourth electrode plate P4 is connected to the third high voltage.

[0102] Optionally, continue to refer to Figure 6 When the electron beam gate 30 is turned off, the third switch S3 is switched to the second output terminal of the high voltage power supply module 1 under the drive of the first pulse signal, and the fourth switch S4 is switched to the third output terminal of the high voltage power supply module 1 under the drive of the first pulse signal, so that the third electrode plate P3 is connected to the second high voltage V+ through the third switch S3, and the fourth electrode plate P4 is connected to the third high voltage V- through the fourth switch S4.

[0103] In other words, when the electron beam gate 30 is turned off, the second set of deflection plates 331 in each even-numbered electron beam deflection unit 33 is supplied with high voltage positive and negative power, and the high voltage connected to the plates at the same end of each even-numbered electron beam deflection unit 33 is different from that of each odd-numbered electron beam deflection unit 32.

[0104] The second set of deflection plates 331 generates an electric field in the second direction based on the voltage difference between the third plate P3 and the fourth plate P4, causing the electron beam to be deflected in the fourth direction under the action of the electric field force of the electric field in the second direction. The voltage difference between the third plate P3 and the fourth plate P4 is the voltage difference between the second high voltage and the third high voltage.

[0105] Optionally, continue to refer to Figure 6 The second set of deflection plates 331 generates an electric field in the second direction based on the voltage difference between the third plate P3 and the fourth plate P4, i.e., the voltage difference between the second high voltage V+ and the third high voltage V-. Figure 6 As shown, the second direction is indicated by the red dashed arrow, pointing from the third electrode P3 to the fourth electrode P4. That is, the electric field directions of each even-numbered electron beam deflection unit 33 and each odd-numbered electron beam deflection unit 32 are completely opposite.

[0106] Continue to refer to Figure 7 The electron beam is deflected in the fourth direction under the electric field force of the electric field in the second direction. That is, the electron beam is deflected towards the fourth plate P4 during the displacement process of entering each even number of electron beam deflection units 33.

[0107] In this embodiment, when the electron beam gate is turned off, the third switch is switched to the second output terminal of the high-voltage power supply module, so that the third electrode plate is connected to the second high-voltage electricity, and the fourth switch is switched to the third output terminal of the high-voltage power supply module, so that the fourth electrode plate is connected to the third high-voltage electricity. The second set of deflection electrodes generates an electric field in the second direction based on the voltage difference formed between the third and fourth electrode plates, so that the electron beam undergoes displacement deflection in the fourth direction under the action of the electric field force of the electric field in the second direction. The voltage difference formed between the third and fourth electrode plates is the voltage difference formed between the second and third high-voltage electricity. When the electron beam gate is turned off, high-voltage positive and negative power supplies are supplied to the second set of deflection electrodes in each even-numbered electron beam deflection unit, so that the electron beam deflects towards the fourth electrode plate during the displacement process of entering each even-numbered electron beam deflection unit.

[0108] As an optional implementation, when the electron beam gate 30 is opened, the third switch S3 is switched to the first output terminal of the high-voltage power supply module 1 so that the third electrode plate P3 is connected to the first high voltage, and the fourth switch S4 is switched to the first output terminal of the high-voltage power supply module 1 so that the fourth electrode plate P4 is connected to the first high voltage to eliminate the electric field in the second direction.

[0109] Optionally, continue to refer to Figure 6 When the electron beam gate 30 is opened, the third switch S3 is switched to the first output terminal of the high voltage power supply module 1 under the drive of the second pulse signal, and the fourth switch S4 is switched to the first output terminal of the high voltage power supply module 1 under the drive of the second pulse signal, so that the third electrode plate P3 is connected to the first high voltage VG through the third switch S3, and the fourth electrode plate P4 is connected to the first high voltage VG through the fourth switch S4.

[0110] In other words, when the electron beam gate 30 is opened, the second set of deflection plates 331 in each even number of electron beam deflection units 33 are supplied with high-voltage floating power. Since there is no voltage difference between the third plate P3 and the fourth plate P4, the electric field in the second direction is quickly eliminated.

[0111] Continue to refer to Figure 8 Because the electric field in the second direction is quickly eliminated, the electron beam will not be displaced or deflected when it enters each even-numbered electron beam deflection unit 33, thus ensuring the direct effect of the electron beam in each even-numbered electron beam deflection unit 33.

[0112] In this embodiment, when the electron beam gate is open, the third switch is switched to the first output terminal of the high-voltage power supply module, so that the third electrode plate is connected to the first high-voltage electricity, and the fourth switch is switched to the first output terminal of the high-voltage power supply module, so that the fourth electrode plate is connected to the first high-voltage electricity, thereby eliminating the electric field in the second direction. When the electron beam gate is open, the second set of deflection electrodes in each even-numbered electron beam deflection unit is supplied with high-voltage floating power to improve the elimination speed of the electric field in the second direction and ensure the direct beam effect when the electron beam enters each even-numbered electron beam deflection unit.

[0113] This application also provides an electron beam exposure apparatus, which includes at least an electron gun 10, a condenser lens 20, an electron beam shutter 30, and a worktable 40. The electron beam shutter 30 includes the shutter switch control device described in the foregoing embodiments.

[0114] The above are merely specific embodiments of this application, but the scope of protection of this application is not limited thereto. Any changes or substitutions that can be easily conceived by those skilled in the art within the scope of the technology disclosed in this application should be included within the scope of protection of this application.

Claims

1. A brake switch control device, characterized in that, include: High-voltage power supply module, control module, and electron beam deflection module; The input terminal of the high-voltage power supply module is connected to low-voltage DC power, and the first output terminal, the second output terminal, and the third output terminal of the high-voltage power supply module can be switched to the first terminal and the second terminal of the electron beam deflection module, respectively. The control terminal of the electron beam deflection module is connected to the output terminal of the control module; The high-voltage power supply module is used to convert the low-voltage DC power into the first high-voltage power, and to perform voltage boosting and voltage reduction of the same amplitude based on the first high-voltage power, and to continuously output the second high-voltage power and the third high-voltage power. The control module is used to send a first pulse signal to the electron beam deflection module when it receives a gate shutdown signal. The electron beam deflection module is used to connect to the second high voltage and the third high voltage respectively under the drive of the first pulse signal, and generate an electric field based on the voltage difference between the second high voltage and the third high voltage, so that the electron beam is deflected under the electric field force of the electric field. The control module is also used to send a second pulse signal to the electron beam deflection module when it receives a beam gate opening signal. The electron beam deflection module is also used to connect the first high voltage under the drive of the second pulse signal to eliminate the electric field, so that the electron beam directly hits the stage of the electron beam exposure device.

2. The clamp switch control device according to claim 1, characterized in that, The electron beam deflection module includes at least two electron beam deflection units arranged vertically. The first and second ends of each electron beam deflection unit can be switched to the first, second, and third output ends of the high-voltage power supply module, respectively. The control terminal of each electron beam deflection unit is connected to the output terminal of the control module; When the electron beam gate is turned off, the high voltage connected to the same end of two adjacent electron beam deflection units is different, so that the electric field directions of the two adjacent electron beam deflection units are opposite.

3. The brake switch control device according to claim 2, characterized in that, The electron beam deflection module includes: N odd-numbered electron beam deflection units and N even-numbered electron beam deflection units; When the electron beam gate is turned off, the first end of each odd number of electron beam deflection units is connected to the third high voltage, and the second end of each odd number of electron beam deflection units is connected to the second high voltage. An electric field in the first direction is generated based on the voltage difference between the third high voltage and the second high voltage, so that the electron beam undergoes a third-direction displacement deflection under the action of the electric field force of the electric field in the first direction. When the electron beam gate is turned off, the first end of each even-numbered electron beam deflection unit is connected to the second high voltage, and the second end of each even-numbered electron beam deflection unit is connected to the third high voltage. Based on the voltage difference between the second high voltage and the third high voltage, an electric field in the second direction is generated, causing the electron beam to undergo displacement deflection in the fourth direction under the action of the electric field force of the electric field in the second direction. The first direction is opposite to the second direction.

4. The brake switch control device according to claim 3, characterized in that, The odd-numbered electron beam deflection unit includes a first switch, a second switch, and a first set of deflection plates, wherein the first set of deflection plates includes a first plate and a second plate. The first terminal of the first switch is switchably connected to the third output terminal of the high-voltage power supply module, the second terminal of the first switch is switchably connected to the first output terminal of the high-voltage power supply module, the common terminal of the first switch is connected to the first electrode plate, and the control terminal of the first switch is connected to the output terminal of the control module. The first terminal of the second switch is switchably connected to the second output terminal of the high-voltage power supply module, the second terminal of the second switch is switchably connected to the first output terminal of the high-voltage power supply module, the common terminal of the second switch is connected to the second electrode plate, and the control terminal of the second switch is connected to the output terminal of the control module.

5. The clamping brake switch control device according to claim 4, characterized in that, When the electron beam gate is turned off, the first switch is switched to the third output terminal of the high-voltage power supply module so that the first electrode plate is connected to the third high voltage, and the second switch is switched to the second output terminal of the high-voltage power supply module so that the second electrode plate is connected to the second high voltage. The first set of deflection plates generates an electric field in the first direction based on the voltage difference between the first plate and the second plate, causing the electron beam to undergo displacement deflection in the third direction under the electric field force of the electric field in the first direction. The voltage difference between the first plate and the second plate is the voltage difference between the third high voltage and the second high voltage.

6. The brake switch control device according to claim 4, characterized in that, When the electron beam gate is opened, the first switch is switched to the first output terminal of the high-voltage power supply module so that the first electrode plate is connected to the first high-voltage electricity, and the second switch is switched to the first output terminal of the high-voltage power supply module so that the second electrode plate is connected to the first high-voltage electricity to eliminate the electric field in the first direction.

7. The brake switch control device according to claim 3, characterized in that, The even-numbered electron beam deflection unit includes a third switch, a fourth switch, and a second set of deflection plates, wherein the second set of deflection plates includes a third plate and a fourth plate. The first terminal of the third switch is switchably connected to the second output terminal of the high-voltage power supply module, the second terminal of the third switch is switchably connected to the first output terminal of the high-voltage power supply module, the common terminal of the third switch is connected to the third electrode plate, and the control terminal of the third switch is connected to the output terminal of the control module. The first terminal of the fourth switch is switchably connected to the third output terminal of the high-voltage power supply module, the second terminal of the fourth switch is switchably connected to the first output terminal of the high-voltage power supply module, the common terminal of the fourth switch is connected to the fourth electrode plate, and the control terminal of the fourth switch is connected to the output terminal of the control module.

8. The clamp switch control device according to claim 7, characterized in that, When the electron beam gate is turned off, the third switch is switched to the second output terminal of the high-voltage power supply module so that the third electrode plate is connected to the second high-voltage electricity, and the fourth switch is switched to the third output terminal of the high-voltage power supply module so that the fourth electrode plate is connected to the third high-voltage electricity. The second set of deflection plates generates an electric field in the second direction based on the voltage difference between the third and fourth plates, causing the electron beam to be deflected in the fourth direction under the electric force of the electric field in the second direction. The voltage difference between the third and fourth plates is the voltage difference between the second high voltage and the third high voltage.

9. The brake switch control device according to claim 7, characterized in that, When the electron beam gate is opened, the third switch is switched to the first output terminal of the high-voltage power supply module so that the third electrode plate is connected to the first high-voltage electricity, and the fourth switch is switched to the first output terminal of the high-voltage power supply module so that the fourth electrode plate is connected to the first high-voltage electricity to eliminate the electric field in the second direction.

10. An electron beam exposure apparatus, characterized in that, The electron beam exposure apparatus includes at least an electron gun, a condenser lens, an electron beam shutter, and a worktable, wherein the electron beam shutter includes the beam shutter switch control device as described in any one of claims 1-9.

Images