A dynode having a beam port type substrate and electron multiplier comprising the same

Abstract

This invention belongs to the field of vacuum electronic device technology and discloses a tampon with a constricted-aperture substrate and an electron multiplier containing the same. The constricted-aperture substrate of the tampon has an arc-shaped portion and fixed portions at both ends. The opening size of the arc-shaped portion in the electron incident direction is larger than the opening size in the electron exit direction, forming a converging electron channel. The fixed portions are bent to fix them to a base box. This invention uses a constricted-aperture substrate to make electrons more focused during exit, reducing edge electron loss and superseded electrons. Simultaneously, it changes the electric field distribution inside the tampon to reduce the proportion of trapped electrons, significantly improving electron collection efficiency and electron multiplier gain.

Description

Technical Field

[0001] This invention belongs to the field of vacuum electronic device technology, specifically relating to a drinometer with a constricted substrate and an electron multiplier containing the same. Background Technology

[0002] An electron multiplier is an electronic device that operates in a vacuum environment. It detects and amplifies signals from microscopic particles such as electrons, photons, and ions through the secondary electron emission effect. Detection systems with electron multipliers as their core component are widely used in the fields of weak signal detection and single-particle detection.

[0003] Currently, electron multipliers are mainly classified into three types according to their structure: microchannel plate, single-channel electron multipliers, and dinter electrode electron multipliers. Among them, dinter electrode electron multipliers, because each dinter electrode is separated and independently biased, have a slightly lower electron collection efficiency than channel structures. However, due to their comprehensive advantages such as high gain, good reliability, wide dynamic range, and long service life, they have become the most widely used type.

[0004] However, existing dinter electron multipliers still face the technical bottleneck of insufficient electron collection efficiency in practical applications. Research indicates that the core factors leading to this problem mainly include three types of electron loss mechanisms: first, skipping stages, where electrons bypass a certain dinter stage during multiplication and directly reach subsequent dinter stages, thus reducing their effective multiplication times; second, trapped electrons, where electrons, after completing a stage of multiplication, bombard the same dinter stage again but cannot escape to the next stage due to insufficient energy; and third, blocked electrons, where electrons are blocked by the grid or the back structure of the dinter stage during their movement and cannot reach the next stage dinter stage.

[0005] Several improvement schemes have been proposed to address the aforementioned problems. For example, adding baffles at the same potential at both ends of the damper can reduce electron loss by utilizing the edge shielding field effect; another approach is to employ a three-dimensional box-grid structure to improve the electric field distribution inside the damper, allowing secondary electrons to reach the central region of the next-stage damper more concentratedly. However, these schemes still have shortcomings: the baffle scheme increases structural complexity and fabrication difficulty, while the box-grid structure still has room for further improvement in electron aggregation and collection efficiency.

[0006] Therefore, there is an urgent need in the field for a novel darad structure that is relatively simple in structure, easy to fabricate, and can effectively improve electron collection efficiency and gain performance. Summary of the Invention

[0007] The purpose of this invention is to provide a duracell with a constricted substrate and an electron multiplier containing the same, so as to solve the technical problems of insufficient electron collection efficiency and limited gain of existing duracell electron multipliers caused by factors such as extra-order electrons, trapped electrons and blocked electrons.

[0008] This invention is achieved through the following technical solution: This invention discloses a dano electrode with a constricted substrate, comprising: A constricted-mouth type substrate, the constricted-mouth type substrate having an arcuate portion and an inlet fixing portion and an outlet fixing portion respectively connected to both ends of the arcuate portion; The arc-shaped portion has a larger opening size in the electron incident direction than in the electron exit direction, so as to form a convergent electron channel. The inlet fixing portion and the outlet fixing portion are bent outwards from the constricted-mouth type substrate to fix the constricted-mouth type substrate to the base box of the darad electrode.

[0009] Furthermore, the arc-shaped surface is divided into an elliptical arc surface, with its major axis direction corresponding to the electron incident direction and its minor axis direction corresponding to the electron exit direction.

[0010] Furthermore, the Ramanujan approximation for the area of ​​the elliptical arc surface is:

[0011] in, , S This represents the area of ​​the curved portion of the constricted substrate. R in The length of the major axis of the elliptical arc surface of the constricted substrate, corresponding to the length perpendicular to the electron incident direction; R out This is the length of the minor axis of the elliptical arc surface of the constricted substrate, corresponding to the length perpendicular to the electron emission direction. H Indicates the height of the ductile substrate; The area of ​​the constricted substrate is the sum of the areas of the curved portion, the inlet fixing portion, and the outlet fixing portion.

[0012] Furthermore, the constricted substrate is a conductive substrate, and a secondary electron emission layer is disposed on its surface.

[0013] Furthermore, it also includes: A grid assembly is disposed on the opening side of the spool-shaped substrate, the grid assembly including a grid frame and a grid fixed to the grid frame; The base frame box has the duct-shaped substrate disposed inside it, and the inlet fixing portion and the outlet fixing portion are respectively bent and attached to the outer wall of the base frame box.

[0014] Furthermore, the grid is a square grid used to focus the electron beam passing through it.

[0015] Furthermore, the thickness of all portions of the constricted substrate is 0.1-0.2 mm.

[0016] The present invention discloses an electron multiplier, comprising multiple stages of duracells arranged sequentially along the electron transport direction, wherein at least one stage of the duracell adopts a duracell with a slit-shaped substrate.

[0017] Furthermore, in the multi-stage dynamo electrode, the dynamo electrode located downstream of the reverse connection structure adopts a dynamo electrode with a constricted substrate. The reverse connection structure is such that the direction of electron emission from the downstream dart electrode is opposite to the direction of electron incident from the upstream dart electrode.

[0018] Furthermore, in the multi-stage damper, at least the 5th and 8th stage dampers adopt the damper with a constricted substrate.

[0019] Compared with the prior art, the present invention has the following beneficial technical effects: This invention discloses a dinter with a constricted-aperture substrate. The constricted-aperture substrate includes an arc-shaped portion and an inlet fixing portion and an outlet fixing portion connected to the two ends of the arc-shaped portion, respectively. The opening size of the arc-shaped portion in the electron incident direction is larger than the opening size in the electron exit direction to form a constricted electron channel. The inlet fixing portion and the outlet fixing portion are bent outwards from the constricted-aperture substrate to be fixed to the base box. Based on the above scheme, the wide inlet facilitates the smooth entry of secondary electrons emitted by the previous stage dinter into the current stage dinter, reducing the number of blocked electrons and skipped stages caused by the narrow inlet; the narrow outlet physically constrains the electron exit path, making the emitted electron beam more focused, reducing the beam size, and reducing edge electron loss; at the same time, the constricted-aperture structure changes the electric field distribution inside the dinter, reducing the electric field intensity in most areas of the secondary electron emission layer surface, making it easier for lower-energy secondary electrons to overcome the surface electric field constraint and fly to the next stage dinter, reducing the proportion of trapped electrons. Therefore, this damper can simultaneously reduce the loss of three types of electrons: supercharged electrons, trapped electrons, and blocked electrons, thereby comprehensively improving the electron collection efficiency of the damper.

[0020] Furthermore, the curved surface is defined as an elliptical arc surface, with the major axis corresponding to the electron incident direction and the minor axis corresponding to the electron exit direction. The elliptical arc surface has a smooth curvature change characteristic, which, compared with other arc shapes, allows for a more uniform and controllable electric field distribution inside the dinter electrode. At the same time, the convergence effect of the elliptical arc surface is gentle and continuous, which helps to reduce collision losses caused by abrupt changes in electron trajectory while ensuring the electron beam focusing effect, further improving the collimation of electron exit and interstage transmission efficiency.

[0021] Furthermore, the constricted substrate is defined as a conductive substrate with a secondary electron emission layer on its surface. The conductive substrate ensures that a stable bias voltage can be applied to the damper to form an accelerating electric field, while the secondary electron emission layer, as a functional material layer for secondary electron emission, can emit multiple secondary electrons when bombarded by incident electrons, thereby achieving electron multiplication. The two work together to ensure the basic working performance of the damper.

[0022] Furthermore, the dinter also includes a grid assembly and a base box. The grid assembly is located on the opening side of the constricted substrate and includes a grid frame and a grid fixed to the grid frame. The constricted substrate is located inside the base box, and the inlet and outlet fixing portions are bent and attached to the outer wall of the base box, respectively. The grid assembly can further focus and guide electrons entering and exiting the dinter, forming a dual focusing effect with the constricted substrate. The base box provides stable support and positioning for the constricted substrate. The assembly method of attaching the fixing portions to the outer wall of the base box simplifies the substrate fixing structure, eliminating the need for additional welding or riveting components, thus improving the reliability of the structure and the ease of assembly.

[0023] This invention also protects an electron multiplier comprising at least one of the aforementioned damper electrodes, which extends the beneficial effects of the damper electrode with a narrow substrate to the entire electron multiplier product. Because at least one damper electrode employs a narrow substrate structure, the improved electron collection efficiency of this damper electrode directly translates into an improved overall gain of the electron multiplier, making the electron multiplier comprising this damper electrode superior in overall performance to electron multipliers using only conventional substrate damper electrodes.

[0024] Furthermore, the tampon located downstream of the reverse connection structure is specified to be a narrow-aperture substrate tampon. In the reverse connection structure, the electron exit direction via the downstream tampon is opposite to the incident direction via the upstream tampon. This connection method itself has a more complex electron transport path and a higher risk of electron loss. The wide-inlet and narrow-outlet design of the narrow-aperture substrate can provide optimal collection conditions when electrons enter the lower-level tampon and optimal focusing effect when electrons exit. The two work together to achieve the most effective function at the most needed position, maximizing the effect of the narrow-aperture substrate tampon. Attached Figure Description

[0025] Figure 1 This is a model diagram of a bundled substrate according to the present invention; Figure 2 for Figure 1 The corresponding darad model diagram with a constricted substrate; The components include: 1. Arc-shaped section; 21. Inlet fixing section; 22. Outlet fixing section; 3. Fence assembly; 4. Base frame box. Figure 3These are schematic diagrams of the paths selected to describe the internal electric field of a dart electrode for both conventional substrate structures and dart electrode structures with constricted substrates; where Figure a is a conventional substrate structure and Figure b is a dart electrode structure with constricted substrates. Figure 4 According to Figure 3 Comparison of the internal electric fields of the daguerre on path a; Figure 5 This is a structural model diagram of a nine-stage electron multiplier, in which the substrate of the darad is of a conventional structure, serving as a control group for this invention; Figure 6 This is a structural model diagram of a nine-stage electron multiplier, in which the substrates of the 5th stage (D5) and the 7th stage (D7) of the darads adopt a slug-type substrate structure, while the substrates of the remaining darads adopt a conventional structure, as an embodiment of the present invention; Figure 7 It is aimed at Figure 5 The electron trajectory diagram of the control group of the present invention obtained by simulation; Figure 8 It is aimed at Figure 6 The simulated electron trajectory diagram of Embodiment 1 of the present invention; Figure 9 This is a structural model diagram of a nine-stage electron multiplier, in which the substrates of the 5th stage (D5) and the 8th stage (D8) of the darads adopt a slug-type substrate structure, while the substrates of the remaining darads adopt a conventional structure, as an embodiment two of the present invention; Figure 10 It is aimed at Figure 5 A schematic diagram of the control group of the present invention, in which monitoring surface one and monitoring surface two are respectively set at the inlet plane of the 6th stage (D6) and the 9th stage (D9); Figure 11 It is aimed at Figure 9 A schematic diagram of a second embodiment of the present invention showing monitoring surface one and monitoring surface two respectively set at the inlet plane of the 6th stage (D6) and the 9th stage (D9) dynamometer. Figure 12a Is for Figure 10 Electron beam pattern of the control group in the present invention on monitoring surface one; Figure 12b Is for Figure 11 In Embodiment 2 of the present invention, the electron beam pattern on monitoring surface one; Figure 13a Is for Figure 10 Electron beam pattern of the control group in the second monitoring plane of this invention; Figure 13b Is for Figure 11 The electron beam pattern on monitoring surface two in Embodiment 2 of the present invention; Figure 14This is a structural model diagram of a nine-stage electron multiplier, in which only the grid of the dynamo electrode is replaced with a vertical grid, and the other conditions are the same as the control group, serving as the first control group of this invention; Figure 15 This is a structural model diagram of a nine-stage electron multiplier. Based on Embodiment 2, only the grid of the dynamo electrode is replaced with a vertical grid, and the other conditions are the same as in Embodiment 2. This is Embodiment 3 of the present invention. Detailed Implementation

[0026] To make the objectives, technical solutions, and advantages of the present invention clearer, the following detailed description is provided in conjunction with the accompanying drawings and embodiments. It should be understood that the specific embodiments described herein are merely illustrative of the invention and are not intended to limit the invention; that is, the described embodiments are only a part of the embodiments of the present invention, and not all of them.

[0027] The components described and illustrated in the accompanying drawings and embodiments of this invention can be arranged and designed in various different configurations. Therefore, the detailed description of the embodiments of the invention provided in the following drawings is not intended to limit the scope of the claimed invention, but merely to illustrate one selected embodiment of the invention. All other embodiments obtained by those skilled in the art based on the accompanying drawings and embodiments of this invention without inventive effort are within the scope of protection of this invention.

[0028] The features and performance of the present invention will be further described in detail below with reference to embodiments.

[0029] like Figure 1 and Figure 2 As shown, the present invention discloses a dano electrode with a slit-type substrate, including a grid assembly 3, a base box 4 and a slit-type substrate, wherein the slit-type substrate is located inside the base box 4.

[0030] The core of this invention lies in the design of a beaded design for the substrate. Specifically, the beaded substrate includes an arc-shaped portion 1, an inlet fixing portion 21, and an outlet fixing portion 22.

[0031] The curved surface portion 1 is elliptical in shape and made of stainless steel. The two ends of the curved surface portion 1 are connected to the inlet fixing portion 21 and the outlet fixing portion 22, respectively. The inlet fixing portion 21 and the outlet fixing portion 22 are used to fix the substrate. One end of the two fixing portions is fixed to the curved surface portion 1 of the constricted substrate, and the other end is bent and tightly attached to the outside of the base frame box 4.

[0032] The outlet of the curved section 1 is located at the darad outlet position. The curvature of the curved section 1 is used to control the size of the darad outlet and control the degree of electron focusing during the process of electrons exiting from the darad outlet to the next darad.

[0033] like Figure 1As shown, the Ramanujan approximation of the area of ​​the elliptical arc surface is:

[0034] in, , S This represents the area of ​​the curved portion of the constricted substrate; R in The length of the major axis of the elliptical arc surface of the constricted substrate, corresponding to the length perpendicular to the electron incident direction; R out The length of the minor axis of the elliptical arc surface of the constricted substrate is the length perpendicular to the electron emission direction. H This indicates the height of the constricted-mouth substrate; the area of ​​the constricted-mouth substrate is the sum of the areas of the curved portion, the inlet fixing portion, and the outlet fixing portion.

[0035] A secondary electron emission layer is covered on the surface of the curved portion 1. The secondary electron emission layer is made of a thin film material with a high secondary electron emission coefficient.

[0036] The thickness of all parts of the constricted substrate is 0.1-0.2 mm. This thickness range ensures that the substrate has sufficient structural strength and conductivity to meet the stable operation requirements of the dynamo electrode under a high voltage electric field. At the same time, the thinner thickness facilitates mass production through stamping, reducing processing difficulty and production costs, and is beneficial for the precise shaping and mass production of the substrate.

[0037] All grid components 3 are made of stainless steel and include a grid frame and a grid. The grid is square in shape and is used to focus electrons. The grid frame is also square in shape, with two extended grid feet at each end to determine the position of the dinter electrode in the electron multiplier. The regular and symmetrical mesh structure of the square grid can produce a uniform focusing effect on the electron beam in two orthogonal directions. This, combined with the elliptical arc surface of the beam-shaped substrate, makes the beam spot shape of electrons entering the next stage dinter electrode more regular and concentrated, further reducing the loss of edge electrons and improving interstage transport efficiency and overall gain.

[0038] Figure 2 for Figure 1 The corresponding darad model diagram has a constricted-mouth substrate. The constricted-mouth substrate consists of three sections: an arc-shaped portion 1, an inlet fixing portion 21, and an outlet fixing portion 22.

[0039] Figure 3 Figure a in the diagram shows the internal electric field path of the selected conventional substrate structure darad electrode. Figure 3 Figure b in the figure is a schematic diagram of the internal electric field path of the danolectrode with a constricted substrate structure designed in this invention. Path a is in close contact with the surface of the secondary electron emission layer, and the electric field intensity along path a represents the magnitude of the electric field intensity on the surface of the secondary electron emission layer.

[0040] Figure 4 for Figure 3 The diagram compares the internal electric fields of the damper along path a. The solid line represents the electric field intensity along path a when using a conventional substrate structure, while the dashed line represents the electric field intensity along path a when using a slatted substrate structure. Figure 4 It can be seen that when the distance along the thin film surface is 0.8-2.5 mm, the electric field strength along path a inside the damper of the constricted substrate structure is generally greater than that of the conventional substrate structure. The region with a distance of 0.8-2.5 mm along the thin film surface is located near the damper entrance. The increased electric field strength in this region favors electron incidence but hinders electron emission. Electrons in this region have greater difficulty overcoming the electric field of the thin film surface to reach the next damper, thus becoming more likely to become trapped electrons. However, in other regions besides the 0.8-2.5 mm distance along the thin film surface, the electric field strength along path a inside the damper of the constricted substrate structure is generally less than that of the conventional substrate structure. This decrease in electric field strength represents a decrease in the electric field strength of the thin film surface. Since the energy of most secondary electrons emitted does not exceed 10 eV, the decrease in the electric field strength of the thin film surface during emission makes it easier for electrons to overcome the electric field of the thin film surface to reach the next damper.

[0041] The line distance along the thin film surface is a technical term defined to describe changes in the electric field. Simply put, it means the length measured from a certain starting point along the curved path of the inner arc surface of the darad electrode (the surface of the secondary electron emitter thin film).

[0042] control group Figure 5 This is a structural model diagram of a nine-stage electron multiplier, in which the substrate of the darad is of a conventional structure, serving as a control group for this invention; Figure 7 It is aimed at Figure 5 The electron trajectory diagram of the control group of the present invention was obtained by simulating the structure. Figure 7 The area shown in red box 1 represents the movement of electrons between the multiplier stages; the area shown in red box 2 represents the movement of electrons skipping stages and escaping from the multiplier. Figure 7 It can be seen that in duracells with traditional substrate structures, the trajectories of secondary electrons are relatively dispersed between duracells; in addition, there is also the phenomenon of electron skipping between duracells.

[0043] Example 1 Figure 6 This is a structural model diagram of a nine-stage electron multiplier, in which the substrates of the 5th stage (D5) and the 7th stage (D7) of the darads adopt a slug-type substrate structure, while the substrates of the remaining darads adopt a conventional structure, as an embodiment of the present invention; Figure 8 It is aimed at Figure 6 The electron trajectory diagram of Embodiment 1 of the present invention was obtained by simulating the structure. Figure 8 The area shown in red box 1 represents the movement of electrons between the multiplier stages; the area shown in red box 2 represents the movement of electrons skipping stages and escaping from the multiplier. Figure 8 It can be seen that when the substrates of the 5th stage (D5) and the 7th stage (D7) are replaced with a constricted substrate structure, the trajectory of secondary electrons between the darad poles is more focused compared to the control group; in addition, electron skipping and escaping from the multiplier are suppressed. Simulation data show that, under the same conditions, Figure 8 The electron multiplier of Embodiment 1, which employs a spool-type substrate structure, has a gain that is greater than... Figure 6 The gain of the control group using a conventional substrate structure was 5.6% higher, which shows that the bundled substrate structure designed in this invention can improve the gain of the multiplier.

[0044] Example 2 Figure 9 This is a structural model diagram of a nine-stage electron multiplier, and... Figure 5 The only difference in the control group is that the substrates of the 5th stage (D5) and 8th stage (D8) of the datta electrode use a constricted substrate structure, while the substrates of the remaining datta electrodes use a conventional structure. This serves as Embodiment Two of the present invention. Simulation data shows that, under the same conditions, Figure 9 The electron multiplier gain of Embodiment 2, which employs a ductile substrate structure, is higher than that of the other two embodiments. Figure 6 The gain of the control group using a conventional substrate structure was 38.8% higher, which shows that the bundled substrate structure designed in this invention can effectively improve the gain of the multiplier.

[0045] Figure 10 It is aimed at Figure 5 A schematic diagram of the control group of the present invention, in which monitoring surface one and monitoring surface two are respectively set at the inlet plane of the 6th stage (D6) and the 9th stage (D9); Figure 11 It is aimed at Figure 9 In Embodiment 2 of the present invention, a schematic diagram is provided showing monitoring surface 1 and monitoring surface 2 respectively set at the entrance plane of the 6th stage (D6) and the 9th stage (D9) damper. Both monitoring surface 1 and monitoring surface 2 are located at the entrance of the next stage damper (D6, D9) of the damper (D5, D8) using a ductile substrate, and are used to further monitor the movement of electrons between damper stages.

[0046] Figure 12a Is for Figure 10 The electron beam pattern of the control group in this invention on monitoring surface one. Figure 12b Is for Figure 11In Embodiment 2 of the present invention, the electron beam pattern on monitoring surface one; Figure 13a Is for Figure 10 Electron beam pattern of the control group in the present invention on monitoring surface two. Figure 13b Is for Figure 11 The electron beam pattern on the monitoring surface of Embodiment 2 of the present invention is shown in Table 1 and in conjunction with Figures 12 and 13. It can be seen that, compared with the control group, the beam-shaped substrate dinter electrode used in Embodiment 2 of the present invention reduces the beam spot radius of the electron beam at the receiving plane of the next-stage dinter electrode by approximately 0.82% and 4.78%, respectively. This effectively improves the focusing degree of electrons, suppresses edge electron loss, and thus improves the collection efficiency of the dinter electrode for secondary electrons and the overall gain of the electron multiplier.

[0047] Table 1. Comparison of electron beam spots at the monitoring surface for different multipliers.

[0048] Furthermore, comparing Embodiment 1 and Embodiment 2, when the electron multiplier dynamo is connected in a reverse connection manner (i.e., the emission direction of electrons through the lower dynamo is opposite to the incident direction of the upper dynamo), the dynamo (D5, D8) located in the reverse connection structure (the connection structure between dynamo D4 and D5, and D7 and D8 is the reverse connection structure) adopts a dynamo with a constricted substrate, which can maximize the gain of the electron multiplier.

[0049] Control Group 1 Figure 14 This is a structural model diagram of a nine-stage electron multiplier, in which only the grid of the dynamo electrode is replaced with a vertical grid, and the other conditions are the same as the control group, serving as the first control group of this invention.

[0050] Example 3 Figure 15 This is a structural model diagram of a nine-stage electron multiplier. Based on Embodiment 2, only the grid of the dynamo electrode is replaced with a vertical grid; all other conditions are the same as in Embodiment 2. This is Embodiment 3 of the present invention. Simulation data shows that, under the same conditions... Figure 15 The electron multiplier gain of Embodiment 3, which employs a spool-type substrate structure, is higher than that of the previous embodiment. Figure 14 The gain of the control group using a conventional substrate structure was 16.6% higher, which shows that the spool-type substrate structure designed in this invention has versatility in improving the gain of multipliers.

[0051] In summary, the electron multiplier proposed in this invention has the following advantages: The electron multiplier using a dinter electrode with a narrow-aperture substrate reduces the size of the dinter electrode exit. By confining the movement of electrons, the electrons are more focused when emitted, reducing the size of the electron beam spot, decreasing edge electron loss, increasing the number of electrons participating in multiplication, and improving the gain of the electron multiplier.

[0052] In electron multipliers employing dintered substrates, the electric field strength near the surface of the secondary electron emission layer on the curved surface inside the dinter is reduced. This reduction in electric field strength allows trapped electrons to overcome the electric field and successfully reach the next dinter during electron multiplication, decreasing the probability of electrons bouncing back to the same dinter due to emission angle or uneven electric field distribution, thereby increasing the overall gain of the electron multiplier.

[0053] Electron multipliers using a dintered substrate have a wide inlet and narrow outlet design when electrons are emitted from the front-stage dinter to the back-stage dinter, which is more conducive to the collection of electrons by the back-stage dinter, reduces the proportion of skipped-stage electrons, and thus improves the collection efficiency between electron stages.

[0054] The electron multiplier using a damper with a narrow substrate can achieve maximum gain by using a damper with a narrow substrate in the damper located in the lower stage of the reverse connection structure, due to the aforementioned effects.

[0055] Finally, it should be noted that the above embodiments are only used to illustrate the technical solutions of the present invention and not to limit it. Although the present invention has been described in detail with reference to the above embodiments, those skilled in the art should understand that modifications or equivalent substitutions can still be made to the specific implementation of the present invention. Any modifications or equivalent substitutions that do not depart from the spirit and scope of the present invention should be covered within the protection scope of the present invention.

Claims

1. A dano electrode with a constricted substrate, characterized in that, include: A constricted-mouth type substrate, the constricted-mouth type substrate having an arcuate portion (1) and an inlet fixing portion (21) and an outlet fixing portion (22) respectively connected to the two ends of the arcuate portion (1). The arc-shaped portion (1) has a larger opening size in the electron incident direction than in the electron exit direction to form a convergent electron channel. The inlet fixing portion (21) and the outlet fixing portion (22) are bent outwards from the constricted-mouth type substrate to fix the constricted-mouth type substrate to the base box (4) of the darad electrode.

2. A dyno electrode with a constricted substrate according to claim 1, characterized in that, The arc-shaped portion (1) is an elliptical arc surface, with its major axis direction corresponding to the electron incident direction and its minor axis direction corresponding to the electron exit direction.

3. A dano electrode with a constricted substrate according to claim 2, characterized in that, The Ramanujan approximation for the area of ​​the elliptical arc surface is: in, , S Let be the area of ​​the arc-shaped portion (1) of the constricted substrate. R in The length of the major axis of the elliptical arc surface of the constricted substrate, corresponding to the length perpendicular to the electron incident direction; R out This is the length of the minor axis of the elliptical arc surface of the constricted substrate, corresponding to the length perpendicular to the electron emission direction. H Indicates the height of the ductile substrate; The area of ​​the constricted substrate is the sum of the areas of the arc-shaped portion (1), the inlet fixing portion (21), and the outlet fixing portion (22).

4. A dano electrode with a constricted substrate according to claim 1, characterized in that, The constricted substrate is a conductive substrate, and a secondary electron emission layer is disposed on its surface.

5. A dano electrode with a constricted substrate according to claim 1, characterized in that, Also includes: A grid assembly (3) is disposed on the opening side of the bundle-shaped substrate. The grid assembly (3) includes a grid frame and a grid fixed to the grid frame. The base frame box (4) has the duct-shaped substrate disposed inside the base frame box (4), and the inlet fixing part (21) and the outlet fixing part (22) are respectively bent and attached to the outer wall of the base frame box (4).

6. A dano electrode with a constricted substrate according to claim 5, characterized in that, The grid is a square grid used to focus the electron beam passing through it.

7. A drinier electrode with a constricted substrate according to claim 1, characterized in that, The thickness of all parts of the constricted substrate is 0.1-0.2 mm.

8. An electron multiplier, comprising a multi-stage dynode array arranged sequentially along the electron transport direction, characterized in that, At least one of the dara electrodes is a dara electrode with a constricted substrate as described in any one of claims 1 to 7.

9. The electron multiplier according to claim 8, characterized in that, In the multi-stage tampon, the tampon located downstream of the reverse connection structure adopts a tampon with a constricted substrate as described in any one of claims 1 to 7. The reverse connection structure is such that the direction of electron emission from the downstream dart electrode is opposite to the direction of electron incident from the upstream dart electrode.

10. The electron multiplier according to claim 8, characterized in that, In the multi-stage damper, at least the 5th and 8th stage dampers are dampers with a constricted substrate as described in any one of claims 1 to 7.

Images