A power module, motor controller, electric drive system and vehicle

Abstract

A power module, motor controller, electric drive system, and vehicle are disclosed, relating to the field of power electronics technology. The power module includes at least two power transmission layers; at least two power units connected to the conductive transmission structure of the power transmission layers; and the at least two power units disposed between the at least two power transmission layers. This design reduces the equivalent series inductance and improves the switching speed and efficiency of the power module.

Description

[0001] Cross-references and priority statements

[0002] This patent application claims priority to application No. 2025104430581, filed on April 9, 2025, entitled "A power module, a motor controller and a vehicle", the entire contents of which are incorporated herein by reference. Technical Field

[0003] This application relates to the field of power electronics technology, and in particular to a power module, a motor controller, an electric drive system, and a vehicle. Background Technology

[0004] New energy vehicles can be powered by a power battery pack. The motor controller (MCU) converts the DC power supplied by the power battery pack into AC power to power the motor of the electric vehicle. That is, the motor controller includes power switching devices for implementing the inverter function.

[0005] The power module in the motor controller is used to encapsulate power switching devices. Traditional power modules usually adopt frame-type modules or injection-molded modules. However, when using these two packaging methods, the power module needs to use copper-clad bonding wires for electrical connection, which results in a large equivalent series inductance (ESL) in the whole system, thus reducing the switching speed and efficiency of the power module. Summary of the Invention

[0006] In view of the above problems, this application provides a power module, a motor controller, an electric drive system, and a vehicle. This solution reduces the equivalent series inductance and improves the switching speed and efficiency of the power module.

[0007] According to a first aspect of the present invention, this embodiment provides a power module, comprising:

[0008] At least two power transmission layers;

[0009] At least two power units are connected to the conductive transmission structure of the power transmission layer;

[0010] The at least two power units are disposed between the at least two power transmission layers.

[0011] Optionally, the power module further includes:

[0012] A connector is provided, which is connected to the power unit via the conductive transmission structure, and is disposed between the at least two power transmission layers.

[0013] Optionally, the connector is disposed on the same layer as the power unit.

[0014] Optionally, the at least two power transmission layers include a first power transmission layer and a second power transmission layer;

[0015] The conductive transmission structure includes a positive DC transmission structure, and a portion of the second power transmission layer forms the positive DC transmission structure.

[0016] The conductive transmission structure includes a negative DC transmission structure, wherein a portion of the first power transmission layer forms the negative DC transmission structure; and / or, a portion of the second power transmission layer forms the negative DC transmission structure.

[0017] Optionally, the connector includes:

[0018] At least one positive terminal connector, said at least one positive terminal connector being connected to the positive DC transmission structure; and / or,

[0019] At least one negative terminal connector is connected to the negative DC transmission structure.

[0020] Optionally, the positive DC transmission structure is connected to the positive connector through a first laser micro-hole.

[0021] Optionally, the negative DC transmission structure includes:

[0022] A first negative electrode DC transmission structure, wherein a portion of the second power transmission layer forms the first negative electrode DC transmission structure, the first negative electrode DC transmission structure is connected to a first negative electrode connector via a second laser micro-aperture, the negative electrode connector including the first negative electrode connector; and / or

[0023] The second negative DC transmission structure is formed by a portion of the first power transmission layer. The second negative DC transmission structure is connected to a second negative connector through a third laser micro-aperture. The negative connector includes the second negative connector. And / or, the second negative DC transmission structure is connected to the first negative DC transmission structure through a fourth laser micro-aperture.

[0024] Optionally, along the direction perpendicular to the power transmission layer, the projection of the first negative DC transmission structure at least partially overlaps with the projection of the second negative DC transmission structure; and / or,

[0025] Along the direction perpendicular to the power transmission layer, the projection of the second negative DC transmission structure at least partially overlaps with the projection of the positive DC transmission structure.

[0026] Optionally, the at least two power units include:

[0027] The upper bridge power unit, wherein the drain of the upper bridge power unit is connected to the positive DC transmission structure through a fifth laser micro-hole;

[0028] The lower bridge power unit has its source electrode connected to the second negative electrode DC transmission structure through a sixth laser micro-aperture.

[0029] Optionally, the power module further includes:

[0030] The first AC transmission structure is partially formed by the first power transmission layer, and the first AC transmission structure is connected to the source of the upper bridge power unit through the seventh laser micro-hole.

[0031] The second AC transmission structure is partially formed by the second power transmission layer, and the second AC transmission structure is connected to the drain of the lower bridge power unit through the eighth laser micro-aperture.

[0032] The first AC transmission structure and the second AC transmission structure are connected by electroplated through holes.

[0033] Optionally, the power module further includes:

[0034] A signal layer is disposed on the side of the first power transmission layer away from the second power transmission layer;

[0035] A first capacitor is disposed on the signal layer. The first end of the first capacitor is connected to the source of the lower bridge power unit through the ninth laser micro-hole and the sixth laser micro-hole. The second end of the first capacitor is connected to the drain of the upper bridge power unit through the tenth laser micro-hole and the seventh laser micro-hole.

[0036] Optionally, the upper bridge power unit includes N upper bridge arm power chips connected in parallel, and the lower bridge power unit includes N lower bridge arm power chips connected in parallel; where N is an integer greater than or equal to 2.

[0037] The i power chips with the longest power paths in the upper bridge arm power chips are equipped with Kelvin sources.

[0038] The i power chips with the longest power paths in the lower bridge arm power chips are provided with the Kelvin source, where i is less than or equal to N.

[0039] Optionally, the upper bridge power unit includes a first upper bridge arm power chip and a second upper bridge arm power chip connected in parallel, and the lower bridge power unit includes a first lower bridge arm power chip and a second lower bridge arm power chip connected in parallel.

[0040] The power path length of the first upper bridge arm power chip is greater than the power path length of the second upper bridge arm power chip, and the first upper bridge arm power chip is provided with a Kelvin source.

[0041] The power path length of the first lower bridge arm power chip is greater than the power path length of the second lower bridge arm power chip, and the first lower bridge arm power chip is provided with a Kelvin source.

[0042] Optionally, the signal layer further includes at least one of the following:

[0043] Gate clamping circuit, Miller clamp, gate resistor.

[0044] Optionally, the power module further includes:

[0045] A conductor fixing layer is disposed between the first power transmission layer and the second power transmission layer, the conductor fixing layer including at least one through hole, and the at least two power units are at least partially disposed in the region between the through hole and the power unit.

[0046] According to a second aspect of the present invention, this embodiment provides a motor controller, the motor controller including one or more power modules as described in any of the first aspects.

[0047] According to a third aspect of the present invention, this embodiment provides an electric drive system, comprising: a power module provided by any of the items in the first aspect; and / or, a motor controller as described in the second aspect.

[0048] According to a fourth aspect of the present invention, this embodiment provides a vehicle, comprising: a power module as described in any of the first aspects; and / or, a motor controller as described in the second aspect;

[0049] The vehicle also includes: a power battery pack and a motor;

[0050] The power battery pack is connected to the input terminal of the motor controller;

[0051] The output terminal of the motor controller is connected to the motor;

[0052] The power battery pack is used to output DC power to the motor controller;

[0053] The motor controller is used to invert the direct current into alternating current and output it to the motor.

[0054] The power module provided in this embodiment of the invention includes at least two power transmission layers and at least two power units. The at least two power units disposed between the at least two power transmission layers are connected to the conductive transmission structure of the power transmission layers. The at least two power units are embedded between the at least two power transmission layers of the power module, such that the distance between the at least two power units located between the at least two power transmission layers and the conductive transmission structure is relatively short. This arrangement facilitates the close connection of the power units to the conductive transmission structure, effectively reduces the series inductance of the conductive transmission structure connected to the power units, and facilitates improvements in the switching speed and efficiency of the power module.

[0055] The following are the previously applied proposals:

[0056] In a first aspect, this application provides a power module, including a multilayer circuit board, which is stacked to form a signal layer, a first power transmission layer, and a second power transmission layer. Between the first and second power transmission layers are: a first connector, a second connector, a third connector, and a power chip for at least one bridge arm. The first connector, the second connector, the third connector, and the power chip for at least one bridge arm are connected via laser microvias in the circuit board, connecting lines on the first power transmission layer, and connecting lines on the second power transmission layer to form a bridge arm. The power chip for at least one bridge arm includes an upper bridge arm power chip and a lower bridge arm power chip; the first and second connectors are connected to the negative terminal on the signal layer; the third connector is connected to the positive terminal on the signal layer; the source of the lower bridge arm power chip is connected to the first connector via a first connecting line on the first power transmission layer, and to the second connector via a second connecting line on the second power transmission layer.

[0057] Using this scheme, the power chip of at least one bridge arm is embedded in the circuit board. The power chip is connected to each connector via laser-drilled microvias in the circuit board and connecting lines on the first and second power transmission layers. Compared to copper plating, this method, combined with bonding wires, significantly shortens the power transmission path. The source of the lower bridge arm power chip is connected to the first connector via a first connecting line on the first power transmission layer and to the second connector via a second connecting line on the second power transmission layer. This parallels the equivalent series inductance of the first and second connecting lines, reducing the overall equivalent series inductance of the power transmission circuit and thus improving the switching speed and efficiency of the power module.

[0058] In one possible implementation, the source of the upper bridge arm power chip is connected to the third connection line of the first power transmission layer through a first laser micro-hole, the third connection line is connected to the fourth connection line of the second power transmission layer through an electroplated through-hole, and the fourth connection line is connected to the drain of the lower bridge arm power chip through a second laser micro-hole.

[0059] In one possible implementation, the fourth connection line is parallel to the first connection line; in a direction perpendicular to the first power transmission layer and the second power transmission layer, the fourth connection line overlaps with a portion of the first connection line; when the power module is operating, the current direction in the fourth connection line is opposite to that in the first connection line.

[0060] In one possible implementation, the drain of the upper bridge arm power chip is connected to a fifth connection line on the signal layer via a third laser micro-aperture. The fifth connection line is connected to a first end of a first inductor, and the second end of the first inductor is connected to a sixth connection line on the signal layer. The sixth connection line is connected to the source of the lower bridge arm power chip via a fourth laser micro-aperture.

[0061] In one possible implementation, the upper bridge arm power chip includes N power chips connected in parallel, and the lower bridge arm power chip includes N power chips connected in parallel; N is an integer greater than or equal to 2; the i power chips with the shortest power paths in the upper bridge arm power chips are provided with Kelvin sources; the i power chips with the shortest power paths in the lower bridge arm power chips are provided with Kelvin sources, and i is less than or equal to N.

[0062] In one possible implementation, the upper bridge arm power chip includes two parallel-connected first upper bridge arm power chips and second upper bridge arm power chips, and the lower bridge arm power chip includes a parallel-connected first lower bridge arm power chip and second lower bridge arm power chip; the power path of the first upper bridge arm power chip is greater than that of the second upper bridge arm power chip, and the first upper bridge arm power chip is provided with a Kelvin source; the power path of the first lower bridge arm power chip is greater than that of the second lower bridge arm power chip, and the first lower bridge arm power chip is provided with a Kelvin source.

[0063] In one possible implementation, the signal layer is further provided with at least one of the following: a gate clamping circuit, a Miller clamp, and a gate resistor.

[0064] In one possible implementation, a first circuit board is included between the first power transmission layer and the second power transmission layer, and the power chip of the second connector, two first connectors, and at least one bridge arm is embedded in the first printed circuit board.

[0065] Secondly, this application also provides a motor controller, which includes one or more power modules provided by the first aspect and any implementation thereof.

[0066] Thirdly, this application also provides a vehicle, including a motor and a power battery pack, and further including the motor controller provided in the second aspect above. The power battery pack is connected to the input terminal of the motor controller; the output terminal of the motor controller is connected to the motor; the power battery pack is used to output DC power to the motor controller; the motor controller is used to invert the DC power into AC power and output it to the motor.

[0067] Note: The noun correspondence between later and earlier applications is as follows:

[0068] The first upper arm power chip 201A corresponds to the upper arm power chip 201A, the second upper arm power chip 201B corresponds to the upper arm power chip 201B, and the first lower arm power chip 202B corresponds to the lower arm power chip 202B. The second lower arm power chip 202A corresponds to the lower arm power chip 202A.

[0069] The first laser micro-aperture S4 corresponds to laser micro-aperture S4. The second laser micro-aperture S11 corresponds to laser micro-aperture S11; the third laser micro-aperture S3 corresponds to laser micro-aperture S3; the fourth laser micro-aperture S6 corresponds to laser micro-aperture S6; the fifth laser micro-aperture S5 corresponds to laser micro-aperture S5; the sixth laser micro-aperture S8 corresponds to laser micro-aperture S8; the seventh laser micro-aperture S12 corresponds to laser micro-aperture S12; the eighth laser micro-aperture S13 corresponds to laser micro-aperture S13; the ninth laser micro-aperture S9 corresponds to laser micro-aperture S9; and the tenth laser micro-aperture S10 corresponds to laser micro-aperture S10.

[0070] The positive DC transmission structure P1 corresponds to copper wire P1; the first negative DC transmission structure P2 corresponds to copper wire P2; the second negative DC transmission structure P3 corresponds to copper wire P3; and the positive connector corresponds to the third connector. The negative connector includes the first connector and the second connector. Attached Figure Description

[0071] To more clearly illustrate the technical solutions in the embodiments of this application or the prior art, the drawings used in the description of the embodiments or the prior art will be briefly introduced below. Obviously, the drawings described below are some embodiments of this application. For those skilled in the art, other drawings can be obtained based on these drawings without creative effort.

[0072] Figure 1 A schematic diagram of a motor controller provided in this application;

[0073] Figure 2 A schematic diagram of a conventional power module provided in this application;

[0074] Figure 3 A schematic diagram of a power module provided in an embodiment of this application;

[0075] Figure 4Provided for the embodiments of this application Figure 3 The corresponding top view;

[0076] Figure 5 Equivalent circuit diagrams provided for embodiments of this application;

[0077] Figure 6 A schematic diagram of an inverter circuit with two power switching devices connected in parallel, provided in an embodiment of this application;

[0078] Figure 7 A schematic diagram of another power module provided in an embodiment of this application;

[0079] Figure 8 A schematic diagram of a motor controller provided in an embodiment of this application;

[0080] Figure 9 This is a schematic diagram of a vehicle provided in an embodiment of this application. Detailed Implementation

[0081] To enable those skilled in the art to better understand the solution of this application, the application scenario of the technical solution of this application will be described first below.

[0082] See Figure 1 The figure is a schematic diagram of a motor controller provided in this application.

[0083] The input terminal of the motor controller 100 is connected to the power battery pack 300, and the output terminal of the motor controller is connected to the winding of the motor 200.

[0084] The motor 200 includes three-phase windings, denoted by U, V and W respectively.

[0085] The motor controller 100 includes three-phase output terminals, each of which is connected to one phase of the motor winding.

[0086] The motor controller 100 includes an inverter circuit 101 and a controller 102.

[0087] The inverter circuit 101 can also be called a direct current (DC) to alternating current (AC) converter circuit, or simply an inverter.

[0088] The inverter circuit 101 can be a three-phase two-level inverter circuit or a three-phase three-level inverter circuit. The embodiments of this application do not make specific limitations. In the following description, the inverter circuit 101 can be a three-phase two-level inverter circuit as an example.

[0089] The input terminal of the inverter circuit 101 is the input terminal of the motor controller 100, and each phase output terminal of the inverter circuit 101 is connected to one phase of the motor winding of the motor 200.

[0090] The inverter circuit 101 is used to convert the DC power provided by the power battery pack 300 into AC power and output it to the motor windings.

[0091] The controller 102 is used to control the power switching devices T1-T6 in the inverter circuit 101.

[0092] join Figure 2 The figure is a schematic diagram of a conventional power module provided in this application.

[0093] The power module in the motor controller is used to encapsulate power switching devices. These power switching devices can be insulated-gate bipolar transistors (IGBTs), metal-oxide-semiconductor field-effect transistors (MOSFETs), silicon carbide metal-oxide-semiconductor field-effect transistors (SiC MOSFETs), etc. Figure 2 Taking the NMOS transistor as an example of a power switching device, the pins of the packaged transistor correspond to the gate, drain, and source in sequence.

[0094] Traditional power modules typically use frame-type or injection-molded modules. However, when using these two packaging methods, the power module, drive circuit, and other components need to be placed on the surface of the PCB for electrical connection. Copper plating and bonding wires are required for connection, resulting in a large equivalent series inductance (ESL) in the entire circuit, which in turn reduces the switching speed and efficiency of the power module.

[0095] To address the above technical issues, this application provides a power module, a motor controller, and a vehicle. The power module embeds a power chip into a multi-layer PCB, reducing the equivalent series inductance and improving the switching speed and efficiency of the power module.

[0096] The implementation of the technical solution of this application is described in detail below with reference to the accompanying drawings. The terms "first," "second," etc., used in this application description are for descriptive purposes only and should not be construed as indicating or implying relative importance or implicitly specifying the number of technical features indicated.

[0097] In this application, unless otherwise expressly specified and limited, the term "connection" shall be interpreted broadly. For example, "connection" may be a fixed connection, a detachable connection, or an integral part; it may be a direct connection or an indirect connection through an intermediate medium.

[0098] See Figure 3 This figure is a schematic diagram of a power module provided in an embodiment of this application. The power module provided in this embodiment includes: at least two power transmission layers 20 / 30; at least two power units 201 / 202 connected to the conductive transmission structure P1 / P2 / P3 / P4 of the power transmission layers; the at least two power units 201 / 202 are disposed between the at least two power transmission layers 20 / 30.

[0099] Specifically, the power module uses internal circuitry to perform AC-DC conversion and voltage boosting / pull-down functions. It amplifies input signals and outputs high current or high voltage to drive high-power devices. The power module can incorporate overcurrent, overtemperature, and short-circuit protection circuits, significantly improving system reliability. The power module can include either a half-bridge or a full-bridge circuit; no specific limitations are imposed here.

[0100] The power transmission layer is a conductive layer, such as a copper layer, that transmits power signals. The power transmission layer may include at least one conductive transmission structure. This conductive transmission structure can be a wide signal line, such as a copper wire. The power transmission layer can transmit the current signal output from the positive terminal of the power supply. The power transmission layer can also return the current signal flowing through the load to the negative terminal of the power supply.

[0101] The power unit achieves efficient switching characteristics through control electrodes, such as gate control. A power module may include at least two power units, one of which can act as an upper bridge circuit and the other as a lower bridge circuit.

[0102] At least two power units are connected to the conductive transmission structure of the power transmission layer. At least two power units are embedded between at least two power transmission layers of the power module, so that the distance between the at least two power units located between the at least two power transmission layers and the conductive transmission structure is relatively close, which facilitates the connection of the power units to the conductive transmission structure nearby and reduces the series inductance of the conductive transmission structure connected to the power units.

[0103] The power module provided in this embodiment includes at least two power transmission layers and at least two power units. The at least two power units disposed between the at least two power transmission layers are connected to the conductive transmission structure of the power transmission layers. The at least two power units are embedded between the at least two power transmission layers of the power module, making the distance between the at least two power units located between the at least two power transmission layers and the conductive transmission structure relatively close. This arrangement facilitates the close connection of the power units to the conductive transmission structure, effectively reducing the series inductance of the conductive transmission structure connected to the power units, and facilitating improvements in the switching speed and efficiency of the power module.

[0104] In one optional embodiment, at least one power unit may include a base and a power chip, wherein a first terminal of the power chip is electrically connected to the base as the input terminal of the power unit, and a second terminal of the power chip serves as the output terminal of the power unit. The power chip may be, for example, a power switch, such as a silicon carbide (SiC) transistor, a silicon nitride (SiN) transistor, or an insulated-gate bipolar transistor (IGBT). Of course, the power chip may also be a transistor made of other semiconductor materials. The power chip may form at least a partial structure of an upper-bridge power unit or a lower-bridge power unit. The power unit provided in this embodiment may serve as at least a partial structure of an upper-bridge circuit or a lower-bridge circuit of an inverter, and no limitations are imposed herein.

[0105] In one optional embodiment, the power chip may include: a first electrode (not shown), a second electrode (not shown), and a control electrode (not shown); the first electrode of the power chip is electrically connected to the base and serves as the input terminal of the power unit. The first electrode of the power chip may, for example, be the emitter. The second electrode of the power chip serves as the output terminal of the power unit. The second electrode of the power chip may, for example, be the collector. The control electrode of the power unit may, for example, be the gate.

[0106] It should be noted that in some embodiments, the power chip may include both a diode and an IGBT; that is, in some embodiments, the power chip integrates both a passive freewheeling chip and an active switching chip. The first terminal of the power chip is defined by the emitter of the IGBT. The second terminal of the power chip is defined by the collector of the IGBT. The control terminal of the power chip is defined by the gate of the IGBT, and no limitations are imposed here.

[0107] Optionally, based on the above embodiments, see also... Figure 3 The power module further includes connectors 203A / 203B / 204, which are connected to the power units 201 / 202 via the conductive transmission structure P1 / P2 / P3 / P4, and are disposed between the at least two power transmission layers 20 / 30.

[0108] Specifically, the connector is a conductive structure. For example, the connector can be a copper block. The connector is disposed between conductive transmission structures. The connector is connected to the power unit through the conductive transmission structure located in the power transmission layer. The connector is used to connect to the positive and / or negative copper busbars of the power supply. For example, the power transmission layer can have at least one through-hole. The connector is at least partially disposed within the through-hole of the power transmission layer. The positive copper busbar T+ and / or negative copper busbar T- of the power supply can be connected to the connector by soldering. This configuration allows the current signal output by the power supply or the current signal returning to the power supply to be transmitted to the power unit through the connector disposed between at least two power transmission layers, shortening the current signal transmission path, reducing the noise inductance of the power module, and further improving the switching efficiency and switching speed of the power module.

[0109] Optionally, based on the above embodiments, see also... Figure 3 The at least two power transmission layers 20 / 30 include a first power transmission layer 20 and a second power transmission layer 30. The conductive transmission structure includes a positive DC transmission structure P1, with a portion of the second power transmission layer 30 forming the positive DC transmission structure P1. The conductive transmission structure includes a negative DC transmission structure P2 / P3, with a portion of the first power transmission layer 20 forming the negative DC transmission structure P2 / P3; and / or, a portion of the second power transmission layer 30 forming the negative DC transmission structure.

[0110] For details, please refer to [link / reference]. Figure 3 The positive DC transmission structure P1 is used to transmit the current signal flowing out of the positive terminal of the power supply. The positive DC transmission structure P1 can be a relatively wide copper trace. The negative DC transmission structures P2 / P3 are used to transmit the current signal returning from the negative terminal of the power supply. A portion of the second power transmission layer 30 forms the positive DC transmission structure P1. A portion of the first power transmission layer 20 forms the negative DC transmission structures P2 / P3. This arrangement facilitates the layering of the positive DC transmission structure P1 and the partial negative DC transmission structures P2 / P3, thus reducing the series inductance between them.

[0111] The first power transmission layer 20 is configured to form the negative DC transmission structure P2 / P3; and / or, a portion of the second power transmission layer 30 is configured to form the negative DC transmission structure P2 / P3, such that a portion of the negative DC transmission structure P2 / P3 and another portion of the negative DC transmission structure P2 / P3 are connected in parallel, which reduces the inductance of the negative DC transmission structure P2 / P3 and further improves the switching efficiency and switching speed of the power module.

[0112] Optional, Figure 4 Provided for the embodiments of this application Figure 3 The corresponding top view. Based on the above embodiments, combined with... Figure 3 and Figure 4 The connector includes: at least one positive connector 204, which is connected to the positive DC transmission structure P1; and / or at least one negative connector 203A / 203B, which is connected to the negative DC transmission structure P2 / P3.

[0113] Specifically, the positive terminal connector can be, for example, a T+ copper block 204. The negative terminal connector can be, for example, a T- copper block. The number of negative terminal connectors can be one, two, or more. When there are two or more negative terminal connectors, the current sharing effect of the negative terminal connectors is better, further improving the switching stability and consistency of the power module. For examples, see [link to example]. Figure 3 The power module provided in this application embodiment includes a multilayer printed circuit board (PCB), which is stacked to form a signal layer 10, a first power transmission layer 20, and a second power transmission layer 30.

[0114] For example, it may include two stacked PCBs, namely a first PCB and a second PCB, with the upper surface of the second PCB forming a signal layer 10, the lower surface of the second PCB and the upper surface of the first PCB forming a first power transmission layer 20, and the lower surface of the first PCB forming a second power transmission layer 30.

[0115] Optionally, the at least two power units may include an upper-bridge power unit and a lower-bridge power unit. The upper-bridge power unit may include an upper-bridge arm power chip 201. The lower-bridge power unit includes a lower-bridge arm power chip 202.

[0116] For example, consider an N-layer PCB stack, where N is an integer greater than 2. The top surface of the stacked layers 1 to N-1 forms the signal layer 10, the bottom surface and the top surface of the Nth PCB form the first power transmission layer 20, and the bottom surface of the Nth PCB forms the second power transmission layer 30. That is, multiple PCB stacks can exist between the first power transmission layer 20 and the signal layer 10.

[0117] The solution provided in this application embeds the power chip of the power unit into the PCB. See also... Figure 1 and Figure 3 , Figure 3 The upper bridge arm power chip 201 and the lower bridge arm power chip 202 of the power unit can correspond to each other. Figure 3In a mid-range inverter circuit, one bridge arm comprises two power switching devices. For example, power chip 201 in the upper bridge arm corresponds to T1, and power chip 202 in the lower bridge arm corresponds to T2; or, power chip 201 in the upper bridge arm corresponds to T3, and power chip 202 in the lower bridge arm corresponds to T4; or, power chip 201 in the upper bridge arm corresponds to T5, and power chip 202 in the lower bridge arm corresponds to T6. It is understandable that a power module can also include power chips from multiple bridge arms.

[0118] See also Figure 4 , Figure 4 Provided for the embodiments of this application Figure 3 The corresponding top view.

[0119] The connector in this embodiment is a conductive metal material. The following description uses a copper block as an example. The copper block can also be called a copper connector, and copper can be replaced with other conductive metal materials; this embodiment does not impose specific limitations.

[0120] In this embodiment, the first connector is a T-copper block 203A and the second connector is a T-copper block 203B. Both the first and second connectors are used to connect to the negative DC bus, which can connect to the negative terminal of the power battery pack.

[0121] The third connector in this embodiment is a T+ copper block 204, which is used to connect to the positive DC bus and can be connected to the positive terminal of the power battery pack through the positive DC bus.

[0122] It should be noted that the third connector corresponds to the positive electrode connector 204. The negative electrode connectors 203A / 203B include a first connector and a second connector. The first connector is a T-copper block 203A. The second connector is a T-copper block 203B.

[0123] Optionally, based on the above embodiments, see also... Figure 3 The connector is arranged on the same layer as the power unit.

[0124] Specifically, this design allows both the power unit and the connectors to be embedded in the power module, effectively reducing the series inductance of the power module, while also preventing the power module from becoming too thick, which is beneficial for miniaturization.

[0125] For example, T-copper block 203A, T-copper block 203B, T+copper block 204, upper bridge arm power chip 201, and lower bridge arm power chip 202 are located on the same PCB layer. See also Figure 3 In the corresponding side view, from the side angle, T-copper block 203A, T-copper block 203B, and T+copper block 204 can be at the same height. Figure 3In the middle, T-copper block 203A, T-copper block 203B, and T+copper block 204 overlap. It is understandable that, from a side view angle, T-copper block 203A, T-copper block 203B, and T+copper block 204 may not be at the same height, so they may partially overlap or not overlap at all in the side view.

[0126] Optionally, based on the above embodiments, see also... Figure 3 The positive DC transmission structure P1 is connected to the positive connector 204 through the first laser micro-hole S4.

[0127] Specifically, the positive DC transmission structure P1 located in the second power transmission layer 30 is connected to the positive connector 204 through the first laser micro-aperture S4. A conductive medium is disposed in the first laser micro-aperture S4, thereby achieving electrical connection between the two ends of the first laser micro-aperture S4. This arrangement shortens the connection path between the positive DC transmission structure P1 and the positive connector 204, thereby reducing the series inductance of the power module's connection lines and further improving the switching efficiency and switching speed of the power module.

[0128] For example, in Figure 3, the dashed lines extending from T-copper block 203A, T-copper block 203B, T+copper block 204, upper bridge arm power chip 201, and lower bridge arm power chip 202 to the first power transmission layer 20 and the second power transmission layer 30 represent laser micro-holes. Conductive media exist within these laser micro-holes, thereby enabling electrical connections between their ends. Laser micro-holes can be used to connect to conductive transmission structures, such as copper layers, on the first power transmission layer 20 and the second power transmission layer 30, thereby achieving interconnections between power chips in the power unit and between the power chips in the power unit and T-copper blocks 203A, T-copper blocks 203B, and T+copper blocks 204. This will be explained in detail below.

[0129] In the embodiments of this application, S1-S10 represent different segments of laser micropores.

[0130] The conductive connection structure laid on the first power transmission layer 20 and the second power transmission layer 30 is a connecting line, such as a copper wire, and the copper wire has a wide routing distance to reduce the transmission impedance of the conductive connection structure.

[0131] Optionally, based on the above embodiments, see also... Figure 3The negative DC transmission structure P2 / P3 includes: a first negative DC transmission structure P2, a portion of the second power transmission layer 30 forming the first negative DC transmission structure P2, the first negative DC transmission structure P2 being connected to a first negative connector 203B via a second laser micro-aperture S11, the negative connector including the first negative connector 203B. And / or, a second negative DC transmission structure P3, a portion of the first power transmission layer 20 forming the second negative DC transmission structure P3, the second negative DC transmission structure P3 being connected to a second negative connector 203A via a third laser micro-aperture S3, the negative connector including the second negative connector 203A; and / or, the second negative DC transmission structure P3 being connected to the first negative DC transmission structure P2 via a fourth laser micro-aperture S6.

[0132] Specifically, a portion of the second power transmission layer 30 forms the first negative DC transmission structure P2. The first negative DC transmission structure P2 is used to transmit the current signal from the load returning to the negative terminal of the power supply through the path of the second power transmission layer 30 to the first negative connector 203B, and then back to the negative copper busbar.

[0133] A portion of the first power transmission layer 20 forms the second negative DC transmission structure P3. The second negative DC transmission structure P3 transmits the current signal from the load returning to the negative terminal of the power supply through the path of the first power transmission layer 20 to the second negative connector 203A, and then back to the negative copper busbar. And / or, the second negative DC transmission structure P3 can be connected to the first negative DC transmission structure P2 through the fourth laser micro-hole S6, and then transmit the current signal from the load returning to the negative terminal of the power supply through the path of the second power transmission layer 30 to the first negative connector 203B, and then back to the negative copper busbar.

[0134] This configuration facilitates the parallel connection of the second negative DC transmission structure P3 located in the first power transmission layer 20 and the first negative DC transmission structure P2 located in the second power transmission layer 30, further reducing the inductance of the negative DC transmission structures P2 / P3 and further improving the switching efficiency and switching speed of the power module.

[0135] Optionally, based on the above embodiments, see also... Figure 3 The at least two power units may include: an upper bridge power unit, the drain of which is connected to the positive DC transmission structure P1 through a fifth laser micro-aperture S5; and a lower bridge power unit, the source of which is connected to the second negative DC transmission structure P3 through a sixth laser micro-aperture S8.

[0136] Specifically, this configuration allows the drain of the upper bridge power unit to be connected to the positive DC transmission structure P1 through the fifth laser micro-aperture S5, and the source of the lower bridge power unit to be connected to the second negative DC transmission structure P3 through the sixth laser micro-aperture S8. The connection paths of both the upper and lower bridge power units are relatively short, reducing the length of the connection lines connected to the upper and lower bridge power units, thereby reducing the series inductance of the current path connected to the power units and further improving the switching efficiency and switching speed of the power module.

[0137] For example, taking the upper bridge arm power chip 201 corresponding to T1 and the lower bridge arm power chip 202 corresponding to T2 as an example, the equivalent circuit connection relationship of each laser micro-aperture segment can be found in [reference]. Figure 5 The equivalent circuit diagram is shown.

[0138] The T-copper block 203A is connected to the negative copper busbar of the power module, such as the T-copper busbar, through the laser micro-hole S2. The T-copper busbar is the negative terminal.

[0139] The T+ copper block 204 is connected to the positive copper busbar of the power module, such as the T+ copper busbar, through the laser micro-hole S1. The T+ copper busbar is the positive terminal. The T+ copper block 203B reaches the second power transmission layer 30 through the laser micro-hole S4, connects to the positive DC transmission structure P1 laid on the second power transmission layer 30, such as a copper wire, and then connects to the laser micro-hole S5. Finally, it is connected to the drain of the upper bridge arm power chip 201 through the laser micro-hole S5.

[0140] Optionally, based on the above embodiments, see also... Figure 3 The power module further includes: a first AC transmission structure P10, a portion of the first power transmission layer 20 forming the first AC transmission structure P10, the first AC transmission structure P10 being connected to the source of the upper bridge power unit through a seventh laser micro-hole S12; a second AC transmission structure P11, a portion of the second power transmission layer 30 forming the second AC transmission structure P11, the second AC transmission structure P11 being connected to the drain of the lower bridge power unit through an eighth laser micro-hole S13; the first AC transmission structure P10 and the second AC transmission structure P11 being connected through an electroplated through-hole 22.

[0141] Specifically, Figure 3This example illustrates an upper-bridge power unit including an upper-bridge power chip 201 and a lower-bridge power unit including a lower-bridge power chip 202, without any limitations. The source of the upper-bridge power chip 201 is connected to a first AC transmission structure P10 on the first power transmission layer 20, such as a copper wire, via a seventh laser micro-hole S12. The first AC transmission structure P10 is connected to a second AC transmission structure P11 laid on the second power transmission layer 30, such as a copper wire, via a plating through hole (PTH) 22. The second AC transmission structure P11 is connected to the drain of the lower-bridge power chip 202 via an eighth laser micro-hole S13, thereby realizing the connection between the source of the upper-bridge power chip 201 and the drain of the lower-bridge power chip 202. Compared with the connection method of copper plating and bonding wire in the prior art, the connection method of this embodiment significantly shortens the power transmission path.

[0142] The primary function of PTH22 is to connect the top and bottom layers of the PCB, providing electrical connectivity. This allows copper to be electroplated onto the hole walls, ensuring current can flow from the top to the bottom. It should be noted that the first AC transmission structure P10 and the second AC transmission structure P11 are used to connect loads, such as motors.

[0143] The T+ copper block 204 is connected to the first negative DC transmission structure P2, such as a copper wire, laid on the second power transmission layer 30 through the second laser micro-hole S11. The first negative DC transmission structure P2 is connected to the fourth laser micro-hole S6.

[0144] Furthermore, the T+ copper block 204 is connected to the second negative DC transmission structure P3 laid on the first power transmission layer 20 through the third laser micro-aperture S3. The fourth laser micro-aperture S6 and the second negative DC transmission structure P3 can converge at the first side of the copper wire P4 included in the second negative DC transmission structure P3 of the first power transmission layer 20. The second side of the copper wire P4 is connected to the sixth laser micro-aperture S8, and the sixth laser micro-aperture S8 is connected to the source of the lower bridge arm power chip 202.

[0145] Optionally, based on the above embodiments, see also... Figure 3 Along the direction perpendicular to the power transmission layer, the projection of the first negative DC transmission structure P2 at least partially overlaps with the projection of the second negative DC transmission structure P3; and / or, along the direction perpendicular to the power transmission layer, the projection of the second negative DC transmission structure P3 at least partially overlaps with the projection of the positive DC transmission structure P1.

[0146] In the above structure, the second AC transmission structure P11, for example, has an equivalent series inductance of Lc for the copper wire and an equivalent series inductance of Ld for the copper wire P4. The currents on Lc and Ld are opposite and form a parallel stacked structure, which reduces parasitic inductance.

[0147] The second negative DC transmission structure P3, for example, has an equivalent series inductance of La for copper wire, and the first negative DC transmission structure, for example, has an equivalent series inductance of Lb for copper wire. The second negative DC transmission structure P3 and the first negative DC transmission structure P2 run in parallel, which is equivalent to La and Lb being connected in parallel, thus reducing the equivalent series inductance.

[0148] In summary, this power module reduces the overall parasitic inductance of the power transmission circuit, that is, it reduces the overall equivalent series inductance of the power transmission circuit, thus improving the switching speed and efficiency of the power module.

[0149] Optionally, based on the above embodiments, see also... Figure 3 The power module further includes: a signal layer 10, which is disposed on the side of the first power transmission layer 20 away from the second power transmission layer 30; a first capacitor 11, disposed on the signal layer, the first end of the first capacitor 11 being connected to the source of the lower bridge power unit through the ninth laser micro-aperture S9 and the sixth laser micro-aperture S8, and the second end of the first capacitor 11 being connected to the drain of the upper bridge power unit through the tenth laser micro-aperture S10 and the seventh laser micro-aperture S12.

[0150] Furthermore, in this embedded power module electrical design scheme, a first capacitor 11 is added between T+ and T- of the power module, which will be explained in detail below with reference to the attached drawings.

[0151] See also Figure 1 , Figure 3 and Figure 4 .

[0152] Differences and Figure 1 The bus capacitor C in the figure, the first capacitor 11 is a capacitor with a small capacitance value, and the capacitance value of the first capacitor 11 is not specifically limited in the embodiments of this application.

[0153] The drain of the upper bridge arm power chip 201 is connected to the copper wire P9 laid on the signal layer 10 through the tenth laser micro-aperture S10. The copper wire P9 is connected to the first end of the first capacitor 11. The second end of the first capacitor 11 is connected to the copper wire P5 on the signal layer 10. The copper wire P5 is connected to the second end of the copper wire P4 on the first power transmission layer 20 through the ninth laser micro-aperture S9, and then connected to the source of the lower bridge arm power chip 202 through the sixth laser micro-aperture S8.

[0154] The first capacitor 11 has a relatively small capacitance value and is used to provide the main current during the switching of the power module. During steady-state conduction, the main current is provided by the large-capacitance bus capacitor C1 between the T+ and T- copper busbars. This further reduces the system inductance of the traditional large-capacitance copper busbar capacitor and power module structure in high-power applications, providing greater flexibility for practical applications and improving the efficiency of the entire system.

[0155] The power module provided in this application embodiment also has Kelvin source pins brought out on the signal layer 10 through laser micro-holes, thereby effectively decoupling the driving circuit and the power circuit of the power chip.

[0156] As the voltage of the high-voltage DC system in electric vehicles increases, multiple power switching devices are now used in parallel in current inverter circuits. Figure 1 In this embodiment, T1-T6 are no longer individual power switching devices, but rather multiple power switching devices connected in parallel. This application does not specifically limit the number of power switching devices connected in parallel; the following description uses two power switching devices connected in parallel as an example.

[0157] See Figure 6 The figure is a schematic diagram of an inverter circuit with two power switching devices connected in parallel according to an embodiment of this application.

[0158] contrast Figure 6 and Figure 5 , Figure 6 T11 and T12 are simultaneously turned on or off. Figure 6 T21 and T22 in the circuit are simultaneously turned on or off. By connecting the power switching devices in parallel, the current stress on each individual power switching device is reduced.

[0159] See Figure 7 This figure is a schematic diagram of another power module provided in an embodiment of this application.

[0160] Figure 7 and Figure 3 The difference lies in the number of power chips embedded in the PCB. Figure 7 The first upper arm power chip 201A in the middle corresponds to Figure 6 T11 in the middle; the second upper bridge arm power chip 201B corresponds to Figure 6 T12 in the middle; the second lower bridge arm power chip 202A corresponds to Figure 6 T21 in the middle; the first lower bridge arm power chip 202B corresponds to Figure 6 T22 in the middle.

[0161] Optionally, based on the above embodiments, see also... Figure 7The upper bridge power unit includes a first upper bridge arm power chip 201A and a second upper bridge arm power chip 201B connected in parallel, and the lower bridge arm power chip includes a first lower bridge arm power chip 202B and a second lower bridge arm power chip 202A connected in parallel.

[0162] For the sake of simplicity and ease of explanation, Figure 7 There is no indication of entry or exit. Figure 3 The T-copper block 203A, T-copper block 203B, and T+copper block 204 are shown. It is understood that for... Figure 7 The implementation shown, and the specific connection methods between T-copper block 203A, T-copper block 203B, T+copper block 204 and each power chip, can be found in [reference needed]. Figure 3 The corresponding explanations will not be repeated here.

[0163] The drain of the first upper bridge arm power chip 201A is connected to the drain of the second upper bridge arm power chip 201B through a laser micro-hole, a copper wire laid on the second power transmission layer 30, and another laser micro-hole.

[0164] The source of the first upper arm power chip 201A is connected to the source of the second upper arm power chip 201B through a laser micro-hole, a copper wire laid on the first power transmission layer 20, and a laser micro-hole in sequence.

[0165] The source of the second upper bridge arm power chip 201B is connected to the copper wire on the first power transmission layer 20 through a laser micro-hole. The copper wire is connected to the copper wire laid on the second power transmission layer 30 through an electroplated through-hole PTH22, and then connected to the drain of the first lower bridge arm power chip 202B through a laser micro-hole. This achieves the connection between the source of the second upper bridge arm power chip 201B and the drain of the first lower bridge arm power chip 202B, and makes the power transmission path shorter.

[0166] The drain of the second lower bridge arm power chip 202A is connected to the drain of the first lower bridge arm power chip 202B in sequence through a laser micro-hole, a copper wire laid on the second power transmission layer 30, and a laser micro-hole.

[0167] The source of the second lower bridge arm power chip 202A is connected to the source of the first lower bridge arm power chip 202B through a laser micro-hole, a copper wire laid on the first power transmission layer 20, and a laser micro-hole in sequence.

[0168] Optionally, based on the above embodiments, see also... Figure 7The upper bridge power unit includes a first upper bridge arm power chip 201A and a second upper bridge arm power chip 201B connected in parallel, and the lower bridge power unit includes a first lower bridge arm power chip 202B and a second lower bridge arm power chip 202A connected in parallel; the length of the power path of the first upper bridge arm power chip 201A is greater than the length of the power path of the second upper bridge arm power chip 201B, and the first upper bridge arm power chip 201A is provided with a Kelvin source; the length of the power path of the first lower bridge arm power chip 202B is greater than the length of the power path of the second lower bridge arm power chip 202A, and the first lower bridge arm power chip 202B is provided with a Kelvin source.

[0169] When multiple power chips are connected in parallel, the solution in this application embodiment adopts an asymmetric Kelvin source design.

[0170] Asymmetric Kelvin source design can increase the common source inductance of chips with shorter power paths and decrease the common source inductance of chips with longer power paths.

[0171] like Figure 7 As shown, the Kelvin source is taken from above the upper bridge arm power chip 201A. The power path of the first upper bridge arm power chip 201A is longer than that of the second upper bridge arm power chip 201B. The power path of the second upper bridge arm power chip 201B is shorter.

[0172] The common source inductor of the first upper bridge power chip 201A is L1.

[0173] The common source inductance of the second upper bridge power chip 201B is L2+L3, which is an increase of L3 compared to the common source inductance of the first upper bridge power chip 201A.

[0174] Since power chips with shorter power paths switch faster than those with longer power paths, increasing their common-source inductance can enhance the negative feedback effect on the gate, compensating for the difference in switching speed caused by the different positions of multiple chips in parallel, and ensuring the dynamic current sharing characteristics of multiple chips in parallel.

[0175] The Kelvin source is located above the power chip 201A on the first upper bridge arm, forming an asymmetrical Kelvin source design. Figure 7 The common-source inductance Ls introduced by the Kelvin source is superimposed with L1, which increases the common-source inductance of the first upper bridge power chip 201A and improves the dynamic current sharing characteristics. Figure 7The common-source inductance Ls introduced by the Kelvin source is superimposed with L2 and L3, increasing the common-source inductance of the second upper-arm power chip 201B and improving its dynamic current sharing characteristics. Compared with the first upper-arm power chip 201A, which has a longer power path, the common-source inductance of the second upper-arm power chip 201B, which has a shorter power path, is increased by L3. This configuration increases the common-source inductance of the second upper-arm power chip 201B with a shorter power path, while decreasing the common-source inductance of the first upper-arm power chip 201A with a longer power path. In other words, it increases the common-source inductance of the second upper-arm power chip 201B with a shorter power path, thereby enhancing the negative feedback effect of the second upper-arm power chip 201B on the gate and better compensating for the switching speed differences caused by the different parallel positions of multiple chips.

[0176] In one optional implementation, the Kelvin source is located above the first lower bridge arm power chip 202B, which has a longer power path than the second lower bridge arm power chip 202A. The second lower bridge arm power chip 202A has a shorter power path. This configuration increases the common source inductance of the second lower bridge arm power chip 202A with its shorter power path, while decreasing the common source inductance of the first lower bridge arm power chip 202B with its longer power path. This increases the common source inductance of the second lower bridge arm power chip 202A with its shorter power path, thereby enhancing the negative feedback effect of the second lower bridge arm power chip 202A on the gate and better compensating for the switching speed differences caused by the different parallel connection positions of multiple chips.

[0177] Optionally, the upper bridge power unit includes N parallel-connected upper bridge arm power chips 201, and the lower bridge power unit includes N parallel-connected lower bridge arm power chips 202; where N is an integer greater than or equal to 2; the i power chips with the longest power paths among the upper bridge arm power chips 201 are provided with Kelvin sources; the i power chips with the longest power paths among the lower bridge arm power chips 202 are provided with Kelvin sources, where i is less than or equal to N.

[0178] Furthermore, in a scenario where N power chips are connected in parallel, when N is greater than 2, the i power chips with the longest power paths in the upper bridge arm power chip 201 are equipped with Kelvin sources, and the i power chips with the longest power paths in the lower bridge arm power chip 202 are also equipped with Kelvin sources, where i is less than or equal to N. For example, N equals 4 and i equals 2.

[0179] Optionally, based on the above embodiments, see also... Figure 7 The signal layer 10 is further provided with at least one of the following: gate clamping circuit, Miller clamping, and gate resistor.

[0180] also, Figure 5 and Figure 7 In this solution, by embedding the power chip into the PCB, gate clamping circuits, Miller clamping circuits, and other driving circuits, as well as gate resistors and other circuit components, can be directly integrated on the PCB signal layer above the power chip. The solution provided in this application allows the driving circuits and other components to be closer to the power chip, shortening the connection length between the driving circuits and other components and the power chip. For example, in practical applications, the driving circuits and other components can overlap with the power chip in the direction perpendicular to the first power transmission layer 20 and the second power transmission layer 30, whereas in the prior art, they can only be laid flat on the horizontal surface of the PCB. Furthermore, in the prior art, when using frame-type or injection-molded modules, the driving circuits and other components can only be placed on the same PCB surface as the power module, and this horizontal arrangement on the surface often significantly extends the power path length.

[0181] Furthermore, this solution can more effectively and promptly protect the power module from damage at fast switching speeds, avoiding mis-connection caused by crosstalk interference and improving the current conversion response rate of the power module. This embodiment can also integrate a gate resistor Rg on the signal layer 10 of the PCB, reserving design space during the power module design phase. Compared to traditionally packaged power modules, where only one Rg scheme can be selected for each design, this solution is more conducive to design iteration.

[0182] Optionally, based on the above embodiments, see also... Figure 7 The power module may further include: a conductor fixing layer (not shown in the figure) disposed between the first power transmission layer 20 and the second power transmission layer 30, the conductor fixing layer including at least one through hole, and the at least two power units being at least partially disposed in the region between the through hole and the power unit.

[0183] Specifically, this configuration facilitates the embedding of power units between the first power transmission layer 20 and the second power transmission layer 30 of the power module, and effectively fixes the power units, thereby improving the reliability of the power module.

[0184] Based on the same inventive concept and the power modules provided in the above embodiments, this application also provides a motor controller, which includes one or more power modules provided in any of the above embodiments and has the beneficial effects of the power modules provided in any of the above embodiments, which will not be repeated here.

[0185] The following explanation, in conjunction with the accompanying drawings, will illustrate this point. The example given is a power module integrating a power chip with a single bridge arm.

[0186] See Figure 8The figure is a schematic diagram of a motor controller provided in an embodiment of this application.

[0187] The input terminal of the motor controller 100 is connected to the power battery pack 300, and the output terminal of the motor controller is connected to the windings of the motor 200. The motor 200 includes three-phase windings, denoted by U, V, and W. The motor controller 100 includes three-phase output terminals, each of which is connected to one phase of the motor winding.

[0188] The motor controller 100 includes an inverter circuit 101 and a controller 102.

[0189] Inverter circuit 101 is a three-phase two-level inverter circuit, including three inverter bridge arms. Each inverter bridge arm corresponds to a power module. That is, power module 81A corresponds to the first inverter bridge arm, power module 81B corresponds to the second inverter bridge arm, and power module 81C corresponds to the third inverter bridge arm.

[0190] Power modules 81A, 81B, and 81C can be distributed to facilitate fault location and reduce replacement costs. In this embodiment, power modules 81A, 81B, and 81C can also be integrated to form a highly integrated inverter circuit.

[0191] For details on the specific implementation and working principle of the power module, please refer to the description in the above embodiments. The embodiments of this application will not be repeated here.

[0192] The controller 102 is used to control the power switching devices in the power module of the inverter circuit 101. The controller can be an application-specific integrated circuit (ASIC), a programmable logic device (PLD), a digital signal processor (DSP), or a combination thereof. The PLD can be a complex programmable logic device (CPLD), a field-programmable gate array (FPGA), a generic array logic (GAL), or any combination thereof; this embodiment does not specifically limit the type of PLD.

[0193] In summary, this motor controller utilizes the power module provided in the embodiments of this application to improve the switching speed and efficiency of the power module, thereby improving the efficiency of the motor controller.

[0194] Based on the same inventive concept, this embodiment provides an electric drive system. The electric drive system provided in this embodiment includes the power module provided in any of the above embodiments, and has the beneficial effects of the power module provided in any of the above embodiments; and / or, the motor controller provided in any of the above embodiments, and has the beneficial effects of the motor controller provided in any of the above embodiments, which will not be described in detail here.

[0195] Based on the same inventive concept and the power module provided in the above embodiments, this application also provides a vehicle that includes the power module proposed in any of the above embodiments, having the beneficial effects of the power module provided in any of the above embodiments; and / or includes the motor controller proposed in any of the above embodiments, having the beneficial effects of the motor controller provided in any of the above embodiments.

[0196] The following is a detailed explanation with reference to the accompanying drawings.

[0197] See Figure 9 This figure is a schematic diagram of a vehicle provided in an embodiment of this application.

[0198] Vehicle 900 can be a battery electric vehicle (BEV), a hybrid electric vehicle (HEV), a plug-in hybrid electric vehicle (PHEV), an extended-range electric vehicle (EREV), a fuel cell vehicle (FCV), etc.

[0199] The vehicle 900 may include a motor controller 100, a power battery pack 300, and a motor 200. The input terminal of the motor controller 100 is connected to the power battery pack 300, and the output terminal of the motor controller is connected to the windings of the motor 200. For more information on the motor controller, please refer to [link to relevant documentation]. Figure 8 The corresponding explanations will not be repeated here in the embodiments of this application.

[0200] The vehicle's motor controller utilizes the power module provided in the embodiments of this application to improve the switching speed and efficiency of the power module, thereby improving the efficiency of the motor controller and thus increasing the vehicle's driving range.

[0201] It should be noted that the various embodiments in this specification are described in a progressive manner, with each embodiment focusing on the differences from other embodiments. Similar or identical parts between embodiments can be referred to interchangeably. For the apparatus disclosed in the embodiments, since it corresponds to the method disclosed in the embodiments, the description is relatively simple; relevant parts can be referred to in the method section.

[0202] It should also be noted that, in this document, relational terms such as "first" and "second" are used only to distinguish one entity or operation from another, and do not necessarily require or imply any such actual relationship or order between these entities or operations. Furthermore, the terms "comprising," "including," or any other variations thereof are intended to cover non-exclusive inclusion, such that a process, method, article, or apparatus that comprises a list of elements includes not only those elements but also other elements not expressly listed, or elements inherent to such a process, method, article, or apparatus. Without further limitations, an element defined by the phrase "comprising one..." does not exclude the presence of other identical elements in the process, method, article, or apparatus that includes said element.

[0203] The above description of the disclosed embodiments enables those skilled in the art to make or use this application. Various modifications to these embodiments will be readily apparent to those skilled in the art, and the general principles defined herein may be implemented in other embodiments without departing from the spirit or scope of this application. Therefore, this application is not to be limited to the embodiments shown herein, but is to be accorded the widest scope consistent with the principles and novel features disclosed herein.

Claims

1. A power module, characterized in that, include: At least two power transmission layers; At least two power units are connected to the conductive transmission structure of the power transmission layer; The at least two power units are disposed between the at least two power transmission layers.

2. The power module according to claim 1, characterized in that, The power module also includes: A connector is provided, which is connected to the power unit via the conductive transmission structure, and is disposed between the at least two power transmission layers.

3. The power module according to claim 2, characterized in that, The connector is arranged on the same layer as the power unit.

4. The power module according to claim 2 or 3, characterized in that, The at least two power transmission layers include a first power transmission layer and a second power transmission layer; The conductive transmission structure includes a positive DC transmission structure, and a portion of the second power transmission layer forms the positive DC transmission structure. The conductive transmission structure includes a negative DC transmission structure, wherein a portion of the first power transmission layer forms the negative DC transmission structure; and / or, a portion of the second power transmission layer forms the negative DC transmission structure.

5. The power module according to claim 4, characterized in that, The connector includes: At least one positive terminal connector, said at least one positive terminal connector being connected to the positive DC transmission structure; and / or, At least one negative terminal connector is connected to the negative DC transmission structure.

6. The power module according to claim 5, characterized in that, The positive DC transmission structure is connected to the positive connector through a first laser micro-hole.

7. The power module according to claim 5 or 6, characterized in that, The negative electrode DC transmission structure includes: A first negative electrode DC transmission structure, wherein a portion of the second power transmission layer forms the first negative electrode DC transmission structure, the first negative electrode DC transmission structure is connected to a first negative electrode connector via a second laser micro-aperture, the negative electrode connector including the first negative electrode connector; and / or The second negative DC transmission structure is formed by a portion of the first power transmission layer. The second negative DC transmission structure is connected to a second negative connector through a third laser micro-aperture. The negative connector includes the second negative connector. And / or, the second negative DC transmission structure is connected to the first negative DC transmission structure through a fourth laser micro-aperture.

8. The power module according to claim 7, characterized in that, Along a direction perpendicular to the power transmission layer, the projections of the first negative DC transmission structure and the second negative DC transmission structure at least partially overlap; and / or, Along the direction perpendicular to the power transmission layer, the projection of the second negative DC transmission structure at least partially overlaps with the projection of the positive DC transmission structure.

9. The power module according to claim 7 or 8, characterized in that, The at least two power units include: The upper bridge power unit, wherein the drain of the upper bridge power unit is connected to the positive DC transmission structure through a fifth laser micro-hole; The lower bridge power unit has its source electrode connected to the second negative electrode DC transmission structure through a sixth laser micro-aperture.

10. The power module according to claim 9, characterized in that, The power module also includes: The first AC transmission structure is partially formed by the first power transmission layer, and the first AC transmission structure is connected to the source of the upper bridge power unit through the seventh laser micro-hole. The second AC transmission structure is partially formed by the second power transmission layer, and the second AC transmission structure is connected to the drain of the lower bridge power unit through the eighth laser micro-aperture. The first AC transmission structure and the second AC transmission structure are connected by electroplated through holes.

11. The power module according to claim 9 or 10, characterized in that, The power module also includes: A signal layer is disposed on the side of the first power transmission layer away from the second power transmission layer; A first capacitor is disposed on the signal layer. The first end of the first capacitor is connected to the source of the lower bridge power unit through the ninth laser micro-hole and the sixth laser micro-hole. The second end of the first capacitor is connected to the drain of the upper bridge power unit through the tenth laser micro-hole and the seventh laser micro-hole.

12. The power module according to any one of claims 9 to 11, characterized in that, The upper bridge power unit includes N upper bridge arm power chips connected in parallel, and the lower bridge power unit includes N lower bridge arm power chips connected in parallel; where N is an integer greater than or equal to 2. The i power chips with the longest power paths in the upper bridge arm power chips are equipped with Kelvin sources. The i power chips with the longest power paths in the lower bridge arm power chips are provided with the Kelvin source, where i is less than or equal to N.

13. The power module according to claim 12, characterized in that, The upper bridge power unit includes a first upper bridge arm power chip and a second upper bridge arm power chip connected in parallel, and the lower bridge power unit includes a first lower bridge arm power chip and a second lower bridge arm power chip connected in parallel. The power path length of the first upper bridge arm power chip is greater than the power path length of the second upper bridge arm power chip, and the first upper bridge arm power chip is provided with a Kelvin source. The power path length of the first lower bridge arm power chip is greater than the power path length of the second lower bridge arm power chip, and the first lower bridge arm power chip is provided with a Kelvin source.

14. The power module according to claim 11, characterized in that, The signal layer is also provided with at least one of the following: Gate clamping circuit, Miller clamp, gate resistor.

15. The power module according to any one of claims 4 to 14, characterized in that, The power module further includes: A conductor fixing layer is disposed between the first power transmission layer and the second power transmission layer, the conductor fixing layer including at least one through hole, and the at least two power units are at least partially disposed in the region between the through hole and the power unit.

16. A motor controller, characterized in that, The motor controller includes one or more power modules as described in any one of claims 1-15.

17. An electric drive system, characterized in that, include: The power module according to any one of claims 1-15; And / or, the motor controller of claim 16.

18. A vehicle, characterized in that, include: The power module according to any one of claims 1-15; And / or, the motor controller of claim 16; The vehicle also includes: a power battery pack and a motor; The power battery pack is connected to the input terminal of the motor controller; The output terminal of the motor controller is connected to the motor; The power battery pack is used to output DC power to the motor controller; The motor controller is used to invert the direct current into alternating current and output it to the motor.

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