high frequency module

Abstract

A high-frequency module capable of suppressing quality degradation of transmitted and / or received signals is provided. The high-frequency module comprises: a control terminal for receiving digital control signals; a control circuit connected to the control terminal; a power amplifier (11 and 12) connected to the control circuit; a filter (31) having a passband including a transmit band of frequency band A; a filter (32) having a passband including a transmit band of frequency band B; a switching circuit (41) included in a semiconductor component (61) and connected between the power amplifier (11) and the filter (31); and a switching circuit (42) included in a semiconductor component (62) and connected between the power amplifier (12) and the filter (32), wherein the control circuit includes a digital processor for processing digital control signals, the switching circuit (42) is connected to the output of the digital processor, and the switching circuit (41) is connected to the control terminal without passing through the digital processor.

Description

Technical Field

[0001] This disclosure relates to high-frequency modules. Background Technology

[0002] Patent document 1 discloses a front-end device comprising a host device controlled based on a serial signal and a slave device controlled based on a parallel signal converted from the serial signal.

[0003] Existing technical documents

[0004] Patent documents

[0005] Patent Document 1: Japanese Patent Application Publication No. 2014-096627 Summary of the Invention

[0006] The problem the invention aims to solve

[0007] However, in the aforementioned prior art, sometimes the quality of the transmitted and / or received signals deteriorates due to leakage of high-frequency signals through the transmission path of the control signal.

[0008] Therefore, the present invention provides a high-frequency module capable of suppressing the degradation of the quality of transmitted and / or received signals.

[0009] Solution for solving the problem

[0010] One aspect of the present invention relates to a high-frequency module comprising: a first control terminal for receiving a first digital control signal; a control circuit connected to the first control terminal; a first power amplifier and a second power amplifier connected to the control circuit; a first filter having a passband including a transmission band of a first frequency band; a second filter having a passband including a transmission band of a second frequency band; a first switching circuit included in a first semiconductor component and connected between the first power amplifier and the first filter; and a second switching circuit included in a second semiconductor component and connected between the second power amplifier and the second filter, wherein the control circuit includes a first digital processor configured to process the first digital control signal, one of the first switching circuit and the second switching circuit is connected to the output terminal of the first digital processor, and the other of the first switching circuit and the second switching circuit is connected to the first control terminal without passing through the first digital processor.

[0011] The effects of the invention

[0012] According to the present invention, it is possible to suppress the degradation of the quality of transmitted and / or received signals. Attached Figure Description

[0013] Figure 1 This is a structural diagram of the communication device involved in Embodiment 1.

[0014] Figure 2 This is a circuit structure diagram of the high-frequency module involved in Implementation Method 1.

[0015] Figure 3 This is a top view of the high-frequency module involved in Implementation Method 1.

[0016] Figure 4 This is a top view of the high-frequency module involved in Implementation Method 1.

[0017] Figure 5 This is a diagram illustrating an example of a leakage path of the transmitted signal in the high-frequency module according to Embodiment 1.

[0018] Figure 6 This is a circuit structure diagram of the high-frequency module involved in Implementation Method 2.

[0019] Figure 7 This is a layout diagram of the semiconductor components and control lines involved in Embodiment 2.

[0020] Figure 8 This is a circuit structure diagram of the high-frequency module involved in Implementation Method 3.

[0021] Figure 9 This is a circuit structure diagram of the high-frequency module involved in Implementation Method 4.

[0022] Figure 10 This is a circuit structure diagram of the high-frequency module involved in Implementation Method 5.

[0023] Figure 11 This is a diagram illustrating an example of a leakage path of the transmitted signal in the high-frequency module according to Embodiment 5.

[0024] Figure 12 This is a circuit structure diagram of the high-frequency module involved in Implementation Method 6. Detailed Implementation

[0025] The embodiments of the present invention will now be described in detail with reference to the accompanying drawings. Furthermore, the embodiments described below are general or specific examples. The numerical values, shapes, materials, constituent elements, arrangements of constituent elements, and connection methods shown in the following embodiments are examples and are not intended to limit the present invention.

[0026] Furthermore, the figures are schematic diagrams that have been appropriately emphasized, omitted, or proportionally adjusted for the purpose of illustrating the invention, and are not necessarily strictly illustrative, sometimes differing from the actual shapes, positional relationships, and proportions. In the figures, substantially identical structures are labeled with the same reference numerals, and sometimes repeated descriptions are omitted or simplified.

[0027] In the following figures, the x-axis and y-axis are mutually orthogonal axes on a plane parallel to the main surface of the module substrate. The z-axis is perpendicular to the main surface of the module substrate, with its positive direction representing the upward direction and its negative direction representing the downward direction.

[0028] In the following description, "connection" includes not only direct connections via connection terminals and / or wiring conductors, but also electrical connections via other circuit elements. "C connected between A and B" means that one end of C is connected to A and the other end of C is connected to B; it means that C is connected in series in the path connecting A and B. "The path connecting A and B" refers to the path formed by conductors that electrically connect A and B.

[0029] The "passband of a filter" is a portion of the spectrum transmitted by the filter, defined as the frequency band between two frequencies that are 3 dB greater than the minimum power insertion loss.

[0030] "Transmit band" refers to the frequency band used for transmitting in a communication device, while "receive band" refers to the frequency band used for receiving in a communication device. For example, in the FDD (Frequency Division Duplex) band, different frequency bands (uplink and downlink bands) are used for transmitting and receiving. Conversely, in the TDD (Time Division Duplex) band, the same frequency band is used for both transmitting and receiving.

[0031] "A frequency band within a specified frequency band" refers to a frequency band extending from n times the low-frequency end of the specified frequency band to n times the high-frequency end of the specified frequency band. Here, n is a natural number greater than 2. For example, the second harmonic frequency band of a specified frequency band is the band extending from twice the low-frequency end of the specified frequency band to twice the high-frequency end of the specified frequency band, and the third harmonic frequency band of a specified frequency band is the band extending from three times the low-frequency end of the specified frequency band to three times the high-frequency end of the specified frequency band. Furthermore, without specifying the order, "harmonic frequency band" refers to the harmonic frequency band of all orders.

[0032] "A combination of frequency bands capable of simultaneous communication" refers to a combination of multiple frequency bands that can transmit, receive, or transmit and receive simultaneously, predefined by standardization bodies such as 3GPP (3rd Generation Partnership Project) and IEEE (Institute of Electrical and Electronics Engineers). Examples of "simultaneous communication" include CA (Carrier Aggregation), EN-DC (E-UTRAN New Radio-Dual Connectivity), NR-DC (New Radio-Dual Connectivity), and NE-DC (New Radio E-UTRAN-Dual Connectivity).

[0033] A "terminal" refers to the point where a conductor within an element ends. Furthermore, when the impedance of the conductors between elements is sufficiently low, a terminal can be interpreted not only as a single point, but also as any point on the conductors between elements or the entire conductor assembly.

[0034] "Component disposed on a substrate" includes components disposed on the main surface of the substrate and components disposed within the substrate. "Component disposed on the main surface of the substrate" includes, in addition to being disposed in contact with the main surface of the substrate, components disposed above the main surface without contact with it (e.g., components stacked on top of other components disposed in contact with the main surface). Additionally, "component disposed on the main surface of the substrate" may also include components disposed in recesses formed on the main surface. "Component disposed within the substrate" includes, in addition to being encapsulated within the substrate, components entirely disposed between two main surfaces of the substrate but with a portion of the component not covered by the substrate, and only a portion of the component disposed within the substrate.

[0035] "A is positioned between B and C" means that at least one of the multiple line segments connecting any point in B to any point in C passes through A. "A is positioned closer to C than B" means that the distance between A and C is shorter than the distance between B and C. Here, "the distance between A (B) and C" refers to the length of the shortest line segment (i.e., the shortest distance) connecting any point on the surface of A (B) to any point on the surface of C.

[0036] "Viewing the module substrate from above" means observing the object by projecting it orthogonally onto the xy plane in the negative z-axis direction. "When viewing the module substrate from above, A and B overlap" means that the area of ​​A projected orthogonally onto the xy plane overlaps with the area of ​​B projected orthogonally onto the xy plane.

[0037] In addition, terms such as "parallel" and "perpendicular" that indicate the relationship between elements, and terms such as "rectangle" that indicate the shape of elements, and numerical ranges that do not only indicate a strict meaning but also include substantially equivalent ranges, such as a few percent of an error.

[0038] (Implementation Method 1)

[0039] The following describes Implementation Method 1.

[0040] [1.1. Structure of Communication Device 5]

[0041] First, refer to Figure 1 The structure of the communication device 5 involved in this embodiment will be explained. Figure 1 This is a structural diagram of the communication device 5 involved in this embodiment.

[0042] also, Figure 1 The illustrated structure allows for the installation of the communication device 5 using a wide variety of circuit mounting methods and circuit techniques. Therefore, the following description of the communication device 5 should not be interpreted restrictively.

[0043] Communication device 5 can be used to provide wireless connectivity. For example, it can be installed on a UE (User Equipment) in a cellular network (also known as a mobile network) such as a mobile phone, smartphone, tablet computer, or wearable device. In another example, by installing communication device 5, wireless connectivity can be provided to IoT (Internet of Things) sensor devices, medical / healthcare devices, vehicles, unmanned aerial vehicles (UAVs), and automated guided vehicles (AGVs). In yet another example, by installing communication device 5, wireless connectivity can also be provided via a wireless access point or wireless hotspot.

[0044] The communication device 5 includes a high-frequency module 1, antennas 2a and 2b, an RFIC (Radio Frequency Integrated Circuit) 3, and a BBIC (Baseband Integrated Circuit) 4.

[0045] High-frequency module 1 is capable of transmitting high-frequency signals between antennas 2a and 2b and RFIC 3. (Using...) Figure 2 The circuit structure of high-frequency module 1 will be described later.

[0046] Antennas 2a and 2b are connected to the high-frequency module 1. Antennas 2a and 2b can receive high-frequency signals from the high-frequency module 1 and transmit them to the outside of the communication device 5. Furthermore, antennas 2a and 2b can receive high-frequency signals from the outside of the communication device 5 and supply them to the high-frequency module 1. Alternatively, one or both of antennas 2a and 2b may not be included in the communication device 5. Additionally, the communication device 5 may have more than one antenna besides antennas 2a and 2b.

[0047] RFIC 3 is an example of a signal processing circuit that processes high-frequency signals. Specifically, RFIC 3 can process the transmit signal input from BBIC 4 through up-conversion or the like, and output the high-frequency transmit signal generated by the signal processing to high-frequency module 1. Furthermore, RFIC 3 can also process the high-frequency receive signal input from high-frequency module 1 through down-conversion or the like, and output the receive signal generated by the signal processing to BBIC 4. Additionally, RFIC 3 may also have a control unit that controls switches and amplifiers in high-frequency module 1. Moreover, some or all of the functions of the control unit of RFIC 3 may be included externally to RFIC 3, for example, in BBIC 4 or high-frequency module 1.

[0048] BBIC 4 is a baseband signal processing circuit that performs signal processing using a frequency band lower than the frequency of the high-frequency signal transmitted by high-frequency module 1. Signals processed by BBIC 4 include, for example, image signals used for image display and / or sound signals used for communication via a speaker. Furthermore, BBIC 4 may not be included in the communication device 5.

[0049] [1.2. Circuit Structure of High-Frequency Module 1]

[0050] Next, refer to Figure 2 The circuit structure of the high-frequency module 1 involved in this embodiment will be explained. Figure 2 This is a circuit structure diagram of the high-frequency module 1 involved in this embodiment.

[0051] also, Figure 2 The circuit structure shown is exemplary, and the high-frequency module 1 can be mounted using any of a variety of circuit mounting and circuit techniques. Therefore, the following description of the high-frequency module 1 should not be interpreted restrictively.

[0052] The high-frequency module 1 includes power amplifiers 11 and 12, low-noise amplifiers 21 and 22, filters 31, 32 and 33, switching circuits 41, 42, 43 and 44, control circuit 50, digital processors 51, 52, 53 and 54, antenna connection terminals 101 and 102, high-frequency input terminals 111 and 112, high-frequency output terminals 121 and 122, and control terminals 131 and 132.

[0053] Antenna connection terminals 101 and 102 are examples of the first and second antenna connection terminals, respectively, and are external connection terminals of the high-frequency module 1. Antenna connection terminals 101 and 102 are used to supply high-frequency signals to antennas 2a and 2b, and to receive high-frequency signals from antennas 2a and 2b. Antenna connection terminal 101 is connected to antenna 2a externally to the high-frequency module 1 and to the switching circuit 43 internally. Antenna connection terminal 102 is connected to antenna 2b externally to the high-frequency module 1 and to the switching circuit 44 internally.

[0054] High-frequency input terminals 111 and 112 are external connection terminals of the high-frequency module 1, used to receive high-frequency signals from RFIC 3. High-frequency input terminals 111 and 112 are connected to RFIC 3 externally and to power amplifiers 11 and 12 internally, respectively.

[0055] High-frequency output terminals 121 and 122 are external connection terminals of the high-frequency module 1, used to supply high-frequency signals to the RFIC 3. High-frequency output terminals 121 and 122 are connected to the RFIC 3 externally in the high-frequency module 1, and are connected to low-noise amplifiers 21 and 22 internally in the high-frequency module 1, respectively.

[0056] Control terminals 131 and 132 are examples of the first and second control terminals, respectively, and are external connection terminals of the high-frequency module 1. Control terminals 131 and 132 are used to receive digital control signals DS1 and DS2 from RFIC 3, respectively. Control terminals 131 and 132 are connected to RFIC 3 externally and to control circuit 50 internally within the high-frequency module 1.

[0057] Power amplifier 11, an example of a first power amplifier, is included in semiconductor component 71. Power amplifier 11 is connected between high-frequency input terminal 111 and filter 31. Specifically, the input terminal of power amplifier 11 is connected to high-frequency input terminal 111. The output terminal of power amplifier 11 is connected to filter 31 in a switchable manner via switching circuit 41. Power amplifier 11 can amplify the transmitted signal of frequency band A using power supplied from a power source (not shown).

[0058] Power amplifier 12, an example of a second power amplifier, is included in semiconductor component 72. Power amplifier 12 is connected between high-frequency input terminal 112 and filter 32. Specifically, the input terminal of power amplifier 12 is connected to high-frequency input terminal 112. The output terminal of power amplifier 12 is connected to filter 32 in a switchable manner via switching circuit 42. Power amplifier 12 can amplify the transmitted signal in frequency band B using power supplied from a power source (not shown).

[0059] Furthermore, power amplifiers 11 and 12 can each be composed of multiple amplifiers. For example, power amplifiers 11 and 12 can each be a multi-stage amplifier comprising multiple amplifiers connected in series. Alternatively, power amplifiers 11 and 12 can each be a differential or balanced power amplifier or a Doherty amplifier comprising multiple amplifiers connected in parallel.

[0060] A low-noise amplifier 21 is included in semiconductor component 65 and connected between filter 33 and high-frequency output terminal 121. Specifically, the input terminal of low-noise amplifier 21 is connected to filter 33. The output terminal of low-noise amplifier 21 is connected to high-frequency output terminal 121. Low-noise amplifier 21 can amplify the received signal in frequency band A using power supplied from a power source (not shown). Alternatively, low-noise amplifier 21 may not be included in high-frequency module 1. In this case, low-noise amplifier 21 may be connected between high-frequency module 1 and RFIC 3, or it may be included in RFIC 3.

[0061] A low-noise amplifier 22 is included in a semiconductor component 65 and connected between a filter 32 and a high-frequency output terminal 122. Specifically, the input of the low-noise amplifier 22 is connected to the filter 32 in a switchable manner via a switching circuit 42. The output of the low-noise amplifier 22 is connected to the high-frequency output terminal 122. The low-noise amplifier 22 can amplify the received signal in frequency band B using power supplied from a power source (not shown). Alternatively, the low-noise amplifier 22 may not be included in the high-frequency module 1. In this case, the low-noise amplifier 22 may be connected between the high-frequency module 1 and the RFIC 3, or it may be included in the RFIC 3.

[0062] Filter 31 is an example of the first filter, and is a bandpass filter having a passband that includes the transmission band (A-Tx) of frequency band A. Filter 31 is connected between power amplifier 11 and antenna connection terminal 101. Specifically, one end of filter 31 is connected to the output of power amplifier 11 in a switchable manner via switching circuit 41. The other end of filter 31 is connected to antenna connection terminal 101 in a switchable manner via switching circuit 43.

[0063] Filter 32, an example of a second filter, is a bandpass filter having a passband encompassing both the transmit and receive bands (B-TRx) of frequency band B. Filter 32 is connected between power amplifier 12, low-noise amplifier 22, and antenna connection terminal 102. Specifically, one end of filter 32 is connected, in a switchable manner, to the output of power amplifier 12 and the input of low-noise amplifier 22 via switching circuit 42. The other end of filter 32 is connected, in a switchable manner, to antenna connection terminal 102 via switching circuit 44.

[0064] Filter 33 is a bandpass filter having a passband that includes the receiving frequency band (A-Rx) of frequency band A. Filter 33 is connected between low-noise amplifier 21 and antenna connection terminal 101. Specifically, one end of filter 33 is connected to the input terminal of low-noise amplifier 21. The other end of filter 33 is connected to antenna connection terminal 101 in a switchable manner via switching circuit 43.

[0065] Furthermore, filters 31 to 33 are not limited to bandpass filters. Several or all of filters 31 to 33 may also be band-stop filters, high-pass filters, low-pass filters, or any combination thereof.

[0066] Frequency bands A and B are used for communication systems built using Radio Access Technology (RAT). Frequency bands A and B are predefined by standardization bodies such as 3GPP (a registered trademark) and IEEE. Examples of communication systems include 5G NR (5th Generation New Radio), 4G LTE (4th Generation Long Term Evolution), 2G GSM (2nd Generation Global System for Mobile communications), and WLAN (Wireless Local Area Network) systems.

[0067] Frequency band A is an example of the first frequency band and is a frequency band included in the first frequency band group. In this embodiment, frequency band A is an FDD frequency band, but it can also be a TDD frequency band or a SUL (Supplementary Uplink) frequency band. As frequency band A, Band 8, Band 26, or Band 28 for LTE, or n8, n26, or n28 for 5G NR can be used. However, frequency band A is not limited to these frequency bands.

[0068] Frequency band B is an example of a second frequency band, and is a frequency band included in a second or third frequency band group. In this embodiment, frequency band B is a TDD frequency band, but it can also be an FDD frequency band or a SUL frequency band. Band 40 or Band 41 for LTE, or n40 or n41 for 5G NR can be used. Alternatively, Band 1 or Band 3, or n1 or n3 for 5G NR can also be used as frequency band B. However, frequency band B is not limited to these frequency bands.

[0069] Frequency bands A and B can also be a combination of frequency bands capable of simultaneous communication. Furthermore, the harmonic bands of the transmission frequency band of frequency band A can at least partially overlap with those of frequency band B. When using such frequency bands A and B, the suppression effect on the quality degradation of the transmitted and / or received signals is significant.

[0070] A frequency band group refers to a frequency range that includes multiple frequency bands used in wireless communication systems. The first frequency band group is lower than the second and third frequency band groups. For example, the first frequency band group uses the low-frequency band group (617MHz~960MHz), the second frequency band group uses the mid-frequency band group (1427MHz~2200MHz), and the third frequency band group uses the high-frequency band group (2300MHz~2690MHz).

[0071] Furthermore, the combination of the first, second, and third frequency band groups is not limited to combinations of low-frequency, mid-frequency, and high-frequency groups. For example, the combination of the first, second, and third frequency band groups can also be any three combinations of the low-frequency, mid-frequency, high-frequency, and ultra-high-frequency groups (3300MHz~5000MHz). Additionally, the first, second, and third frequency band groups do not necessarily have to be frequency band groups within FR1 (Frequency Range 1): 600MHz~7.125GHz. Several or all of the first, second, and third frequency band groups can, for example, be frequency band groups within FR2 (Frequency Range 2): 24.25GHz~71GHz and FR3 (Frequency Range 3): 7.125GHz~24.25GHz.

[0072] Switching circuit 41 is an example of a first switching circuit, and is an SPXT (Single-Pole X-Throw) type switching circuit included in semiconductor component 61. Switching circuit 41 is connected between power amplifier 11 and filter 31. Specifically, switching circuit 41 includes a common terminal 410 connected to the output terminal of power amplifier 11 and a selection terminal 411 connected to one end of filter 31. In addition, switching circuit 41 may also include one or more selection terminals connected to one or more other filters (not shown). Furthermore, switching circuit 41 is connected to control terminal 131 via digital processor 52, not via digital processor 51.

[0073] In this connection state, the switching circuit 41 can switch the connection and disconnection between the power amplifier 11 and the filter 31 according to the control signal generated by the digital processor 52 based on the digital control signal DS1.

[0074] Switching circuit 42, an example of a second switching circuit, is a DPXT (Double-Pole X-Throw) type switching circuit included in semiconductor component 62. Switching circuit 42 is connected between power amplifier 12, low-noise amplifier 22, and filter 32. Specifically, switching circuit 42 includes terminals 421 and 422, and terminal 423. Terminal 421 is an example of a first terminal, connected to the output of power amplifier 12. Terminal 422 is an example of a second terminal, connected to the input of low-noise amplifier 22. Terminal 423 is an example of a third terminal, connected to one end of filter 32. Furthermore, switching circuit 42 may also include one or more selection terminals connected to one or more other filters (not shown). Additionally, switching circuit 42 is connected to digital processor 51 via digital processor 53.

[0075] In this connection state, the switching circuit 42 can switch the connection of the filter 32 between the power amplifier 12 and the low noise amplifier 22 according to the control signal generated by the digital processor 53 based on the digital control signal DS3.

[0076] Switching circuit 43 is an example of a third switching circuit, and is an SPXT-type switching circuit included in semiconductor component 63. Switching circuit 43 is connected between antenna connection terminal 101 and filters 31 and 33. Specifically, switching circuit 43 includes a common terminal 430 connected to antenna connection terminal 101 and a selection terminal 431 connected to the other end of filters 31 and 33. In addition, switching circuit 43 may also include one or more selection terminals connected to one or more other filters (not shown) for the first frequency band group. Furthermore, switching circuit 43 is connected to digital processor 51 via digital processor 54.

[0077] In this connection state, the switching circuit 43 can switch the connection and non-connection between the antenna connection terminal 101 and the filters 31 and 33 according to the control signal generated by the digital processor 54 based on the digital control signal DS3.

[0078] Switching circuit 44 is an example of a fourth switching circuit, and is an SPXT-type switching circuit included in semiconductor component 63. Switching circuit 44 is connected between antenna connection terminal 102 and filter 32. Specifically, switching circuit 44 includes a common terminal 440 connected to antenna connection terminal 102 and a selection terminal 441 connected to the other end of filter 32. In addition, switching circuit 44 may also include one or more selection terminals connected to one or more other filters (not shown) for the second or third frequency band group. Furthermore, switching circuit 44 is connected to digital processor 51 via digital processor 54.

[0079] In this connection state, the switching circuit 44 can switch the connection and non-connection between the antenna connection terminal 102 and the filter 32 according to the control signal generated by the digital processor 54 based on the digital control signal DS3.

[0080] Control circuitry 50 is included in semiconductor component 64 and connected to control terminals 131 and 132. Control circuitry 50 is capable of controlling power amplifiers 11 and 12 based on digital control signals DS1 and DS2 supplied from RFIC 3 via control terminals 131 and 132. Control circuitry 50 includes digital processor 51.

[0081] Digital processor 51, an example of a first digital processor, is connected between control terminals 131 and 132 and digital processors 53 and 54. Specifically, the first and second input terminals of digital processor 51 are connected to control terminals 131 and 132, respectively. The output terminal of digital processor 51 is connected to the input terminals of digital processors 53 and 54. Digital processor 51 is capable of processing digital control signals DS1 and DS2 supplied from RFIC 3 via control terminals 131 and 132. Specifically, digital processor 51 is capable of combining digital control signals DS1 and DS2 to output digital control signal DS3.

[0082] Digital processor 52, an example of a second digital processor, is included in semiconductor component 61. Digital processor 52 is connected between control terminal 131 and switching circuit 41 without passing through digital processor 51. Specifically, the input terminal of digital processor 52 is connected to control terminal 131 without passing through digital processor 51. The output terminal of digital processor 52 is connected to switching circuit 41. Digital processor 52 can process the digital control signal DS1 supplied from RFIC 3 via control terminal 131 and output a control signal for controlling switching circuit 41.

[0083] Digital processor 53, an example of a third digital processor, is included in semiconductor component 62. Digital processor 53 is connected between digital processor 51 and switching circuit 42. Specifically, the input terminal of digital processor 53 is connected to the output terminal of digital processor 51. The output terminal of digital processor 53 is connected to switching circuit 42. Digital processor 53 can process the digital control signal DS3 supplied from digital processor 51 and output a control signal for controlling switching circuit 42.

[0084] Digital processor 54, an example of a fourth digital processor, is included in semiconductor component 63. Digital processor 54 is connected between digital processor 51 and switching circuits 43 and 44. Specifically, the input terminal of digital processor 54 is connected to the output terminal of digital processor 51. The first and second output terminals of digital processor 54 are respectively connected to switching circuits 43 and 44. Digital processor 54 can process the digital control signal DS3 supplied from digital processor 51 and output control signals for controlling switching circuits 43 and 44.

[0085] Digital control signal DS1 is an example of a first digital control signal and is used for the first and second frequency band groups. Digital control signal DS2 is an example of a second digital control signal and is used for the third frequency band group. Digital control signal DS3 is an example of a third digital control signal and is used for the first, second, and third frequency band groups. DS1, DS2, and DS3 are source-synchronous serial data signals. Alternatively, clock-embedded serial data signals can also be used as digital control signals DS1, DS2, and DS3.

[0086] [1.3. Installation Example of High-Frequency Module 1]

[0087] Next, refer to Figure 3 as well as Figure 4 An example of installing a high-frequency module 1 with the circuit structure described above will be explained. Figure 3 This is a top view of the high-frequency module 1 involved in this embodiment. Figure 4This is a top view of the high-frequency module 1 involved in this embodiment, which is a view of the main surface 90b of the module substrate 90 from the z-axis positive side.

[0088] exist Figure 3 as well as Figure 4 In order to easily understand the configuration relationship of each component, a label is attached to each component to indicate that component, but it is also possible not to attach this label to each actual component. Figure 3 In the diagram, areas within semiconductor components, portions of wiring within module substrate 90, and portions of external connection terminals on main surface 90b are indicated by dashed lines. Additionally, in Figure 3 In the diagram, components marked with a slash and shaded indicate arbitrary components that are not essential in this embodiment.

[0089] also, Figure 3 as well as Figure 4 The illustrated structure allows for the installation of the high-frequency module 1 using a wide variety of circuit mounting and circuit techniques. Therefore, the following description of the high-frequency module 1 should not be interpreted restrictively.

[0090] The module substrate 90 has main surfaces 90a and 90b facing each other. In addition to control lines 92 and 93, wiring and through-hole electrodes (not shown) are formed in and / or on the module substrate 90.

[0091] Control lines 92 and 93 are the transmission paths for digital control signals DS1 and DS3, respectively. Control lines 92 and 93 can be patterned wiring, through-hole conductors, bonding wires, or any combination thereof, but are not limited to these.

[0092] The module substrate 90 can be, for example, a low-temperature co-fired ceramic (LTCC) substrate or a high-temperature co-fired ceramic (HTCC) substrate with a multi-dielectric layer stacked structure, a component-embedded substrate, a substrate with a redistribution layer (RDL), or a printed circuit board, but is not limited to these.

[0093] Filters 31 (LB-Tx), 32 (HB-TRx), and 33 (LB-Rx) are disposed on the main surface 90a of the module substrate 90. Filters 31 to 33 may also be surface acoustic wave (SAW) filters, bulk acoustic wave (BAW) filters, LC filters, or dielectric filters, or any combination thereof, and are not limited to these.

[0094] Semiconductor component 61, an example of a first semiconductor component, is disposed on the main surface 90a of module substrate 90. Semiconductor component 61 includes a switching circuit 41 (LB BSSW) and a digital processor 52 (DP2). Semiconductor component 61 is electrically connected to a control terminal 131 disposed on the main surface 90b of module substrate 90 via a control line 92 formed on and / or within module substrate 90.

[0095] Semiconductor component 62, an example of a second semiconductor component, is disposed on the main surface 90a of module substrate 90. Semiconductor component 62 includes a switching circuit 42 (MHB BSSW) and a digital processor 53 (DP3). Semiconductor component 62 is electrically connected to semiconductor component 64 via control lines 93 formed on and / or within module substrate 90.

[0096] Semiconductor component 63, an example of a third semiconductor component, is disposed on the main surface 90a of module substrate 90. Semiconductor component 63 includes switching circuit 43 (LB ASW), switching circuit 44 (MHB ASW), and digital processor 54 (DP4). Within semiconductor component 63, digital processor 54 is disposed between switching circuits 43 and 44. Semiconductor component 63 is electrically connected to semiconductor component 64 via control lines 93 formed on and / or within module substrate 90.

[0097] Semiconductor component 64 is disposed on the main surface 90a of module substrate 90 and includes control circuit 50 (PAC), which includes digital processor 51 (DP1). Semiconductor component 64 is electrically connected to control terminals 131 and 132 disposed on the main surface 90b of module substrate 90 via through-hole conductors (not shown) formed in module substrate 90. In addition, semiconductor component 64 is electrically connected to semiconductor components 62 and 63 via control lines 93 formed on and / or in module substrate 90.

[0098] Semiconductor component 65 is a semiconductor integrated circuit including low-noise amplifiers 21 and 22 (LNAs) and is disposed on the main surface 90a of module substrate 90. Furthermore, when low-noise amplifiers 21 or 22 are connected to multiple filters, semiconductor component 65 may also include a switching circuit that can switch low-noise amplifiers 21 or 22 between the multiple filters.

[0099] For example, single-crystal silicon (Si), gallium nitride (GaN), or silicon carbide (SiC) can be used as the semiconductor material for semiconductor components 61-65. In this case, the switching circuits 41-44 can be constructed using field-effect transistors (FETs). Furthermore, some or all of the low-noise amplifiers 21 and 22 can be constructed using FETs.

[0100] Semiconductor components 71 and 72 are semiconductor integrated circuits, each including power amplifier 11 (LB PA) and power amplifier 12 (MHB PA), respectively, disposed on the main surface 90a of the module substrate 90. For example, silicon germanium (SiGe) or gallium arsenide (GaAs) can be used as the semiconductor material for semiconductor components 71 and 72. In this case, some or all of power amplifiers 11 and 12 can be constructed using heterojunction bipolar transistors (HBTs). Alternatively, gallium nitride (GaN) or silicon carbide (SiC) can also be used as the semiconductor material for semiconductor components 71 and 72. In this case, some or all of power amplifiers 11 and 12 can be constructed using HEMTs (High Electron Mobility Transistors) or MESFETs (Metal-Semiconductor Field Effect Transistors). Furthermore, single-crystal silicon (Si) can also be used as the semiconductor material for semiconductor components 71 and 72. At this point, some or all of the power amplifiers 11 and 12 can be made of CMOS (Complementary Metal Oxide Semiconductor) or can be manufactured by SOI (Silicon on Insulator) process.

[0101] Furthermore, semiconductor components 71 and 72 can be integrated into a single semiconductor component. Alternatively, each of semiconductor components 71 and 72 can be divided into multiple semiconductor components.

[0102] Multiple external connection terminals 91 are disposed on the main surface 90b of the module substrate 90, including antenna connection terminals 101 and 102, high-frequency input terminals 111 and 112, high-frequency output terminals 121 and 122, control terminals 131 and 132, and a ground terminal. Furthermore, Figure 3 and Figure 4 In this configuration, only control terminals 131 and 132 are distinguished from the other terminals. Some or all of the multiple external connection terminals 91 are electrically connected externally to input / output terminals and / or ground terminals disposed on the mother substrate (not shown) in the negative z-axis direction of the high-frequency module 1. Additionally, some or all of the multiple external connection terminals 91 are electrically connected internally to components within the module substrate 90 of the high-frequency module 1.

[0103] In addition, Figure 3 as well as Figure 4 The example shown is a single-sided mounting module in which circuit components are arranged on only one side (main side 90a) of the module substrate 90. However, the high-frequency module 1 according to this embodiment can also be a double-sided mounting module in which circuit components are arranged on both sides (main sides 90a and 90b) of the module substrate 90. In this case, for example, some or all of the semiconductor components 61 to 65 can also be arranged on the main side 90b of the module substrate 90.

[0104] [1.4. Leakage path of transmitted signal in high-frequency module 1]

[0105] Reference Figure 5 An example of a leakage path of the transmitted signal in the high-frequency module 1 involved in this embodiment will be described. Figure 5 This diagram illustrates an example of a leakage path in the transmitted signal of the high-frequency module 1 according to this embodiment. Figure 5 In the diagram, dashed arrows indicate signal paths, and dotted arrows indicate leakage paths.

[0106] exist Figure 5 Simultaneously, signals in frequency band A are transmitted and signals in frequency band B are received. At this time, switch circuit 41 connects common terminal 410 to selection terminal 411, switch circuit 42 connects terminal 422 to terminal 423, switch circuit 43 connects common terminal 430 to selection terminal 431, and switch circuit 44 connects common terminal 440 to selection terminal 441.

[0107] Thus, the transmitted signal of band A is transmitted from the high-frequency input terminal 111 through the power amplifier 11, the switching circuit 41, the filter 31, and the switching circuit 43 to the antenna connection terminal 101. The received signal of band B is transmitted from the antenna connection terminal 102 through the switching circuit 44, the filter 32, the switching circuit 42, and the low-noise amplifier 22 to the high-frequency output terminal 122.

[0108] At this time, a portion of the transmitted signal in band A leaks into the receiving path of band B via switching circuit 41, digital processor 51, and switching circuit 42. However, since digital processor 51 is present in the leakage path, this leakage is reduced. That is, compared to the case where switching circuit 41 is connected to the output of digital processor 51, the isolation between switching circuits 41 and 42 is improved when switching circuit 41 is connected to control terminal 131 without passing through digital processor 51.

[0109] In particular, when band B is a TDD band, the switching circuit 42 includes a terminal 422 connected to the low-noise amplifier 22, making it easy for the transmitted signal from band A to leak into the receiving path of band B. Furthermore, when the harmonic bands of the transmitted frequency band of band A at least partially overlap with the receiving frequency band of band B, the leakage of the transmitted signal from band A into the receiving path of band B significantly reduces the receiving sensitivity of the signal in band B. Under these conditions, suppressing the leakage of the transmitted signal from band A into the receiving path of band B via the control signal transmission path is highly effective.

[0110] [1.5. Summary]

[0111] As described above, the high-frequency module 1 according to this embodiment includes: a control terminal 131 for receiving a digital control signal DS1; a control circuit 50 connected to the control terminal 131; power amplifiers 11 and 12 connected to the control circuit 50; a filter 31 having a passband including a transmission band of frequency band A; a filter 32 having a passband including a transmission band of frequency band B; a switching circuit 41 included in a semiconductor component 61 and connected between the power amplifier 11 and the filter 31; and a switching circuit 42 included in a semiconductor component 62 and connected between the power amplifier 12 and the filter 32. The control circuit 50 includes a digital processor 51 configured to process the digital control signal DS1. One of the switching circuits 41 and 42 is connected to the output terminal of the digital processor 51, and the other of the switching circuits 41 and 42 is connected to the control terminal 131 without passing through the digital processor 51.

[0112] Therefore, one of the switching circuits 41 and 42 is connected to the output of the digital processor 51, while the other of the switching circuits 41 and 42 is connected to the control terminal 131 without going through the digital processor 51. Thus, in order for the high-frequency signal to reach the switching circuit 42 from the switching circuit 41 via the control signal transmission path, it must pass through the digital processor 51. That is, the connection between the switching circuits 41 and 42 via the control signal transmission path is blocked by the digital processor 51, thereby improving the isolation between the switching circuits 41 and 42. As a result, leakage of the transmission signal of frequency band A from the switching circuit 41 to the switching circuit 42 via the control signal transmission path can be suppressed, and the loss of the transmission signal of frequency band A can be suppressed, thereby suppressing quality degradation.

[0113] Additionally, for example, the high-frequency module 1 involved in this embodiment may also include a control terminal 132 for receiving digital control signal DS2. The control terminal 132 may also be connected to the control circuit 50. The digital processor 51 may also be configured to combine the digital control signal DS1 and the digital control signal DS2 to output a digital control signal DS3. Frequency band A may also be included in the first frequency band group, and frequency band B may also be included in the second frequency band group or the third frequency band group which is higher than the first frequency band group. The switching circuit 41 may also be connected to the control terminal 131 without going through the digital processor 51, and the switching circuit 42 may also be connected to the output terminal of the digital processor 51.

[0114] Therefore, the two digital control signals DS1 and DS2 can be combined into a single digital control signal DS3, reducing the number of control lines and terminals within the high-frequency module 1. Even under these conditions, the degradation of the transmitted signal in frequency band A can be suppressed by improving the isolation between switching circuits 41 and 42.

[0115] Alternatively, for example, in the high-frequency module 1 of this embodiment, the digital control signals DS1, DS2 and DS3 may each contain serial data signals.

[0116] Therefore, the serial data signals typically used in front-end devices can be used for the control of high-frequency module 1.

[0117] Additionally, for example, the high-frequency module 1 according to this embodiment may also include: a digital processor 52, which is included in the semiconductor component 61 and connected between the control terminal 131 and the switching circuit 41 without passing through the digital processor 51, configured to process the digital control signal DS1; and a digital processor 53, which is included in the semiconductor component 62 and connected between the digital processor 51 and the switching circuit 42, configured to process the digital control signal DS3.

[0118] Therefore, the digital processor 52 capable of processing the digital control signal DS1 and the switching circuit 41 are included in the same semiconductor component 61, and the digital processor 53 capable of processing the digital control signal DS3 and the switching circuit 42 are included in the same semiconductor component 62. Thus, the number of components can be reduced to achieve miniaturization of the high-frequency module 1.

[0119] Additionally, for example, the high-frequency module 1 involved in this embodiment may also include a switching circuit 43 connected between the filter 31 and the antenna connection terminal 101, and a switching circuit 44 connected between the filter 32 and the antenna connection terminal 102. The switching circuits 43 and 44 may also be connected to the output terminal of the digital processor 51.

[0120] Therefore, the synthesized digital control signal DS3 can be used to control the switching circuits 43 and 44. Thus, compared to the case where the digital control signals DS1 and DS2 are directly used to control the switching circuits 43 and 44, the number of control lines and terminals in the high-frequency module 1 can be reduced.

[0121] Alternatively, for example, the high-frequency module 1 involved in this embodiment may also include a digital processor 54, which is connected between the digital processor 51 and the switching circuits 43 and 44, and is configured to process the digital control signal DS3. The digital processor 54 and the switching circuits 43 and 44 may also be included in the semiconductor component 63. Within the semiconductor component 63, the digital processor 54 may also be disposed between the switching circuits 43 and 44.

[0122] Therefore, within the semiconductor component 63, a digital processor 54 capable of processing the digital control signal DS3 is disposed between the switching circuits 43 and 44. This improves the isolation between the switching circuits 43 and 44, and suppresses the leakage of the transmission signal of frequency band A to the transmission path of frequency band B via the switching circuits 43 and 44.

[0123] Alternatively, for example, in the high-frequency module 1 involved in this embodiment, frequency bands A and B can also be a combination of frequency bands that can communicate simultaneously.

[0124] Therefore, in the simultaneous transmission of signals in frequency bands A and B, it is possible to suppress the leakage of the transmission signal of one of frequency bands A and B to the transmission path of the other of frequency bands A and B through the transmission path of the control signal, which is effective in suppressing the degradation of the transmission signals of frequency bands A and B.

[0125] Additionally, for example, the high-frequency module 1 involved in this embodiment may also include a low-noise amplifier 22, the frequency band B may also be a TDD frequency band, and the switching circuit 42 may also include a terminal 421 connected to the power amplifier 12, a terminal 422 connected to the low-noise amplifier 22, and a terminal 423 connected to the filter 32.

[0126] Therefore, during the simultaneous transmission and reception of signals in band A and band B, leakage of the transmitted signal from band A to the received signal in band B via the control signal transmission path can be suppressed, effectively mitigating the degradation of the receiving sensitivity in band B. In particular, since band B is a TDD band, and the low-noise amplifier 22 is connected to the switching circuit 42, increasing the isolation between the switching circuits 41 and 42 significantly reduces the degradation of the receiving sensitivity in band B.

[0127] Additionally, for example, in the high-frequency module 1 of this embodiment, the harmonic band of the transmission band of frequency band A may at least partially overlap with that of frequency band B.

[0128] Therefore, the harmonics of frequency band A have a significant impact on the degradation of the receiving sensitivity of frequency band B. Thus, suppressing the leakage of the transmitted signal of frequency band A into the receiving path of frequency band B through the transmission path of the control signal is very effective in suppressing the degradation of the receiving sensitivity of frequency band B.

[0129] (Implementation Method 2)

[0130] Next, Embodiment 2 will be described. The main difference between this embodiment and Embodiment 1 is that, similar to the switching circuit 41, the switching circuit 43 is connected to the control terminal 131 without passing through the digital processor 51. Hereinafter, this embodiment will be described with reference to the accompanying drawings, focusing on the differences from Embodiment 1.

[0131] Furthermore, the communication device 5 according to this embodiment is the same as the communication device 5 according to Embodiment 1, except that it has a high-frequency module 1A instead of the high-frequency module 1. Therefore, the illustrations and descriptions of the structure of the communication device 5 according to this embodiment are omitted.

[0132] [2.1. Circuit structure of high-frequency module 1A]

[0133] Reference Figure 6 The circuit structure of the high-frequency module 1A involved in this embodiment will be explained. Figure 6 This is a circuit structure diagram of the high-frequency module 1A involved in this embodiment.

[0134] also, Figure 6The illustrated structure allows for the mounting of the high-frequency module 1A using a wide variety of circuit mounting and circuit techniques. Therefore, the following description of the high-frequency module 1A should not be interpreted restrictively.

[0135] The high-frequency module 1A includes power amplifiers 11 and 12, low-noise amplifiers 21 and 22, filters 31, 32 and 33, switching circuits 41, 42, 43 and 44, control circuit 50, digital processors 51, 52, 53, 54A and 55A, antenna connection terminals 101 and 102, high-frequency input terminals 111 and 112, high-frequency output terminals 121 and 122, and control terminals 131 and 132.

[0136] Digital processor 54A is an example of a fourth digital processor and is included in semiconductor component 63A. Digital processor 54A is connected between control terminal 131 and switching circuit 43 without passing through digital processor 51. Specifically, the input terminal of digital processor 54A is connected to control terminal 131 without passing through digital processor 51. The output terminal of digital processor 54A is connected to switching circuit 43. Digital processor 54A can process the digital control signal DS1 supplied from RFIC 3 via control terminal 131 and output a control signal for controlling switching circuit 43.

[0137] Digital processor 55A is an example of a fifth digital processor and is included in semiconductor component 63A. Digital processor 55A is connected between digital processor 51 and switching circuit 44. Specifically, the input terminal of digital processor 55A is connected to the output terminal of digital processor 51. The output terminal of digital processor 55A is connected to switching circuit 44. Digital processor 55A can process the digital control signal DS3 supplied from digital processor 51 and output a control signal for controlling switching circuit 44.

[0138] [2.2. Mounting example of semiconductor component 63A]

[0139] The main difference between this embodiment and the high-frequency module 1 described in Embodiment 1 is that the high-frequency module 1A in this embodiment uses a semiconductor component 63A and a control line 92A instead of the semiconductor component 63 and the control line 92. Therefore, referring to... Figure 7 Explain semiconductor component 63A and control line 92A.

[0140] Figure 7 This is a layout diagram of the semiconductor component 63A and control line 92A involved in this embodiment. Figure 7 In order to easily understand the configuration relationship of each component, a label is attached to each component to indicate that component, but it is also possible not to attach this label to each actual component. Figure 7In the diagram, areas within semiconductor components and portions of wiring within module substrate 90 are indicated by dashed lines.

[0141] also, Figure 7 The illustrated structure allows for the mounting of semiconductor component 63A and control line 92A using a variety of circuit mounting and circuit techniques. Therefore, the following description of semiconductor component 63A and control line 92A should not be interpreted limitingly.

[0142] Semiconductor component 63A, an example of a third semiconductor component, is disposed on the main surface 90a of module substrate 90. Semiconductor component 63A includes switching circuit 43 (LB ASW), switching circuit 44 (MHB ASW), digital processor 54A (DP4), and digital processor 55A (DP5). Within semiconductor component 63A, digital processors 54A and 55A are disposed between switching circuits 43 and 44. Semiconductor component 63A is electrically connected to semiconductor component 64 via control lines 93 formed on and / or within module substrate 90. Furthermore, semiconductor component 63A is electrically connected to control terminals 131 disposed on the main surface 90b of module substrate 90 via control lines 92A formed on and / or within module substrate 90.

[0143] [2.3. Summary]

[0144] As described above, the high-frequency module 1A in this embodiment may also include a switching circuit 43 connected between the filter 31 and the antenna connection terminal 101, and a switching circuit 44 connected between the filter 32 and the antenna connection terminal 102. The switching circuit 43 may also be connected to the control terminal 131 without going through the digital processor 51, and the switching circuit 44 may also be connected to the output terminal of the digital processor 51.

[0145] Therefore, switching circuit 43 is connected to control terminal 131 without going through digital processor 51, and switching circuit 44 is connected to the output of digital processor 51. Thus, for a high-frequency signal to reach switching circuit 44 from switching circuit 43 via the control signal transmission path, it must pass through digital processor 51. That is, the connection between switching circuits 43 and 44 via the control signal transmission path is blocked by digital processor 51, thereby improving the isolation between switching circuits 43 and 44. As a result, leakage of the transmission signal of frequency band A from switching circuit 43 to switching circuit 44 via the control signal transmission path can be suppressed, and loss of the transmission signal of frequency band A can be suppressed, thereby suppressing quality degradation.

[0146] Additionally, for example, the high-frequency module 1A according to this embodiment may also include: a digital processor 54A, which is connected between the control terminal 131 and the switching circuit 43 without passing through the digital processor 51, and is configured to process the digital control signal DS1; and a digital processor 55A, which is connected between the digital processor 51 and the switching circuit 44, and is configured to process the digital control signal DS3. The digital processors 54A and 55A and the switching circuits 43 and 44 may also be included in the semiconductor component 63A. Within the semiconductor component 63A, the digital processors 54A and 55A may also be disposed between the switching circuits 43 and 44.

[0147] Therefore, within semiconductor component 63A, digital processors 54A and 55A are disposed between switching circuits 43 and 44. This improves the isolation between switching circuits 43 and 44, and suppresses leakage of transmission signals from frequency band A to the transmission path of frequency band B via switching circuits 43 and 44.

[0148] (Implementation Method 3)

[0149] Next, Embodiment 3 will be described. The main difference between this embodiment and Embodiment 2 is that the switching circuit 43 and the switching circuit 41 are included in the same semiconductor component. Hereinafter, this embodiment will be described with reference to the accompanying drawings, focusing on the differences from Embodiment 2.

[0150] Furthermore, the communication device 5 according to this embodiment is the same as the communication device 5 according to Embodiment 1, except that it has a high-frequency module 1B instead of a high-frequency module 1. Therefore, the illustrations and descriptions of the structure of the communication device 5 according to this embodiment are omitted.

[0151] [3.1. Circuit structure of high-frequency module 1B]

[0152] Reference Figure 8 The circuit structure of the high-frequency module 1B involved in this embodiment will be explained. Figure 8 This is a circuit structure diagram of the high-frequency module 1B involved in this embodiment.

[0153] also, Figure 8 The illustrated structure allows for the installation of the high-frequency module 1B using a wide variety of circuit mounting and circuit techniques. Therefore, the following description of the high-frequency module 1B should not be interpreted restrictively.

[0154] The high-frequency module 1B includes power amplifiers 11 and 12, low-noise amplifiers 21 and 22, filters 31, 32 and 33, switching circuits 41, 42, 43 and 44, control circuit 50, digital processors 51, 52B, 53 and 55A, antenna connection terminals 101 and 102, high-frequency input terminals 111 and 112, high-frequency output terminals 121 and 122, and control terminals 131 and 132.

[0155] Switching circuit 43 is an example of a third switching circuit, and is included in the same semiconductor component 61B as switching circuit 41.

[0156] Digital processor 52B is an example of a second digital processor and is included in semiconductor component 61B. Digital processor 52B is connected between control terminal 131 and switching circuits 41 and 43 without passing through digital processor 51. Specifically, the input terminals of digital processor 52B are connected to control terminal 131 without passing through digital processor 51. The first and second output terminals of digital processor 52B are connected to switching circuits 41 and 43, respectively. Digital processor 52B can process the digital control signal DS1 supplied from RFIC 3 via control terminal 131 and output control signals for controlling switching circuits 41 and 43.

[0157] [3.2. Mounting Examples of Semiconductor Components 61B and 63B]

[0158] The main difference between this embodiment and the high-frequency modules 1 and 1A described in embodiments 1 and 2 is that the high-frequency module 1B in this embodiment uses semiconductor components 61B and 63B instead of semiconductor components 61 and 63. Therefore, referring to... Figure 3 and Figure 8 Explain semiconductor components 61B and 63B.

[0159] Semiconductor component 61B is an example of the first semiconductor component and is disposed on the main surface 90a of the module substrate 90 in the same manner as semiconductor component 61. Semiconductor component 61B includes switching circuits 41 and 43 and a digital processor 52B. Semiconductor component 61B is electrically connected to a control terminal 131 disposed on the main surface 90b of the module substrate 90 via a control line 92 formed on and / or within the module substrate 90.

[0160] Semiconductor component 63B is an example of a third semiconductor component, and is disposed on the main surface 90a of module substrate 90 in the same manner as semiconductor component 63. Semiconductor component 63B includes a switching circuit 44 and a digital processor 55A. Semiconductor component 63B is electrically connected to semiconductor component 64 via control lines 93 formed on and / or within module substrate 90.

[0161] [3.3. Summary]

[0162] As described above, in the high-frequency module 1B of this embodiment, the switching circuit 43 may also be included in the semiconductor component 61B.

[0163] Therefore, since the switching circuit 43 and the switching circuit 41 are included in the same semiconductor component 61B, the number of control lines and terminals used to transmit the digital control signal DS1 for controlling the switching circuits 41 and 43 can be reduced.

[0164] (Implementation Method 4)

[0165] Next, Embodiment 4 will be described. The main difference between this embodiment and Embodiment 1 is that the digital control signal DS1, which contains a serial data signal, is converted into a digital control signal DS2C, which contains a parallel data signal. Hereinafter, this embodiment will be described with reference to the accompanying drawings, focusing on the differences from Embodiment 1.

[0166] Furthermore, the communication device 5 according to this embodiment is the same as the communication device 5 according to Embodiment 1, except that it has a high-frequency module 1C instead of a high-frequency module 1. Therefore, the illustrations and descriptions of the structure of the communication device 5 according to this embodiment are omitted.

[0167] [4.1. Circuit Structure of High-Frequency Module 1C]

[0168] Reference Figure 9 The circuit structure of the high-frequency module 1C involved in this embodiment will be explained. Figure 9 This is a circuit structure diagram of the high-frequency module 1C involved in this embodiment.

[0169] also, Figure 9 The illustrated structure allows for the installation of the high-frequency module 1C using a wide variety of circuit mounting and circuit techniques. Therefore, the following description of the high-frequency module 1C should not be interpreted restrictively.

[0170] The high-frequency module 1C includes power amplifiers 11 and 12, low-noise amplifiers 21 and 22, filters 31, 32 and 33, switching circuits 41, 42, 43 and 44, control circuit 50, digital processors 51C, 52C, 53C and 54C, antenna connection terminals 101 and 102, high-frequency input terminals 111 and 112, high-frequency output terminals 121 and 122, and control terminal 131.

[0171] Digital processor 51C, an example of a first digital processor, is connected between control terminal 131 and digital processor 52C. Specifically, the input terminal of digital processor 51C is connected to control terminal 131. The output terminal of digital processor 51C is connected to the input terminal of digital processor 52C. Digital processor 51C is capable of processing the digital control signal DS1 supplied from RFIC 3 via control terminal 131. Specifically, digital processor 51C is capable of converting the digital control signal DS1 into a digital control signal DS2C.

[0172] Digital processor 52C is an example of a second digital processor and is included in semiconductor component 61. Digital processor 52C is connected between digital processor 51C and switching circuit 41. Specifically, the input terminal of digital processor 52C is connected to the output terminal of digital processor 51C. The output terminal of digital processor 52C is connected to switching circuit 41. Digital processor 52C can process the digital control signal DS2C supplied from digital processor 51C and output a control signal for controlling switching circuit 41.

[0173] Digital processor 53C, an example of a third digital processor, is included in semiconductor component 62. Digital processor 53C is connected between control terminal 131 and switching circuit 42 without passing through digital processor 51C. Specifically, the input terminal of digital processor 53C is connected to control terminal 131 without passing through digital processor 51C. The output terminal of digital processor 53C is connected to switching circuit 42. Digital processor 53C can process the digital control signal DS1 supplied from RFIC 3 via control terminal 131 and output a control signal for controlling switching circuit 42.

[0174] Digital processor 54C, an example of a fourth digital processor, is included in semiconductor component 63. Digital processor 54C is connected between control terminal 131 and switching circuits 43 and 44 without passing through digital processor 51C. Specifically, the input terminal of digital processor 54C is connected to control terminal 131 without passing through digital processor 51C. The first and second output terminals of digital processor 54C are respectively connected to switching circuits 43 and 44. Digital processor 54C can process the digital control signal DS1 supplied from RFIC 3 via control terminal 131 and output control signals for controlling switching circuits 43 and 44. Alternatively, digital processor 54C may also be disposed within semiconductor component 63 between switching circuits 43 and 44, similarly to digital processor 54.

[0175] Digital control signal DS1 is an example of a first digital control signal, and it is used for control of the first frequency band group, the second frequency band group, and the third frequency band group. Digital control signal DS1 includes a serial data signal. A serial data signal refers to a data signal used in serial communication, meaning a signal that transmits data sequentially at one bit per transmission path. Furthermore, digital control signal DS1 can include a source-synchronous serial data signal or a clock-embedded serial data signal.

[0176] The digital control signal DS2C is an example of a second digital control signal and is used for the first frequency band group. The digital control signal DS2C includes parallel data signals. Parallel data signals refer to data signals used in parallel communication, meaning multiple signals that simultaneously transmit multiple bits of data on multiple transmission paths. For example, GPIO (General Purpose Input / Output) can be used for transmitting and receiving parallel data signals.

[0177] [4.2. Summary]

[0178] As described above, in the high-frequency module 1C of this embodiment, the digital processor 51C may also be configured to convert the digital control signal DS1 into a digital control signal DS2C. The digital control signal DS1 may also include a serial data signal, and the digital control signal DS2C may also include a parallel data signal. Frequency band A may also be included in the first frequency band group, and frequency band B may also be included in the second or third frequency band group which is higher than the first frequency band group. The switching circuit 41 may also be connected to the output terminal of the digital processor 51C, and the switching circuit 42 may also be connected to the control terminal 131 without going through the digital processor 51C.

[0179] Therefore, serial data signals can be converted into parallel data signals, and leakage of the transmission signal of frequency band A from the switching circuit 41 to the switching circuit 42 via the control signal transmission path can be suppressed. As a result, the loss of the transmission signal of frequency band A can be suppressed, thereby suppressing quality degradation.

[0180] Additionally, for example, the high-frequency module 1C according to this embodiment may also include: a digital processor 52C, which is included in the semiconductor component 61 and connected between the digital processor 51C and the switching circuit 41, configured to process the digital control signal DS2C; and a digital processor 53C, which is included in the semiconductor component 62 and connected between the control terminal 131 and the switching circuit 42 without passing through the digital processor 51C, configured to process the digital control signal DS1.

[0181] Therefore, the digital processor 52C capable of processing the digital control signal DS2C and the switching circuit 41 are included in the same semiconductor component 61, and the digital processor 53C capable of processing the digital control signal DS1 and the switching circuit 42 are included in the same semiconductor component 62. Thus, the number of components can be reduced, thereby achieving miniaturization of the high-frequency module 1C.

[0182] Additionally, for example, the high-frequency module 1C involved in this embodiment may also include a switching circuit 43 connected between the filter 31 and the antenna connection terminal 101, and a switching circuit 44 connected between the filter 32 and the antenna connection terminal 102. The switching circuits 43 and 44 may also be connected to the control terminal 131 without going through the digital processor 51C.

[0183] Therefore, the digital control signal DS1 can be used to control the switching circuits 43 and 44. Thus, compared to the case where the digital control signal DS3 is used to control the switching circuits 43 and 44, the number of control lines and terminals within the high-frequency module 1C can be reduced.

[0184] Alternatively, for example, the high-frequency module 1C involved in this embodiment may also include a digital processor 54C, which is connected between the control terminal 131 and the switching circuits 43 and 44 without passing through the digital processor 51C, and is configured to process the digital control signal DS1. The digital processor 54C and the switching circuits 43 and 44 may also be included in the semiconductor component 63, and the digital processor 54C may also be disposed between the switching circuits 43 and 44 within the semiconductor component 63.

[0185] Therefore, within the semiconductor component 63, a digital processor 54C capable of processing the digital control signal DS1 is disposed between the switching circuits 43 and 44. This improves the isolation between the switching circuits 43 and 44, and suppresses the leakage of the transmission signal of frequency band A to the transmission path of frequency band B via the switching circuits 43 and 44.

[0186] (Implementation Method 5)

[0187] Next, Embodiment 5 will be described. The main difference between this embodiment and Embodiment 1 is that the switching circuits 41 and 43 are separated by the digital processor. Hereinafter, this embodiment will be described with reference to the accompanying drawings, focusing on the differences from Embodiment 1.

[0188] Furthermore, the communication device 5 according to this embodiment is the same as the communication device 5 according to Embodiment 1, except that it has a high-frequency module 1D instead of a high-frequency module 1. Therefore, the illustrations and descriptions of the structure of the communication device 5 according to this embodiment are omitted.

[0189] [5.1. Circuit Structure of High-Frequency Module 1D]

[0190] Reference Figure 10 The circuit structure of the high-frequency module 1D involved in this embodiment will be explained. Figure 10 This is a circuit structure diagram of the high-frequency module 1D involved in this embodiment.

[0191] also, Figure 10 The illustrated structure allows for the installation of the high-frequency module 1D using a wide variety of circuit mounting and circuit techniques. Therefore, the following description of the high-frequency module 1D should not be interpreted restrictively.

[0192] The high-frequency module 1D includes power amplifiers 11 and 12, low-noise amplifiers 21 and 22, filters 31, 32 and 33, switching circuits 41, 42, 43 and 44, control circuit 50, digital processors 51D1, 51D2, 52, 53, 54D and 55D, antenna connection terminals 101 and 102, high-frequency input terminals 111 and 112, high-frequency output terminals 121 and 122, and control terminals 131 and 132.

[0193] Digital processor 51D1, an example of a first digital processor, is connected between control terminal 131 and digital processor 54D. Specifically, the input terminal of digital processor 51D1 is connected to control terminal 131. The output terminal of digital processor 51D1 is connected to the input terminal of digital processor 54D. Digital processor 51D1 is capable of processing the digital control signal DS1 supplied from RFIC 3 via control terminal 131. Specifically, digital processor 51D1 is capable of converting the digital control signal DS1 into a digital control signal DS3D.

[0194] Digital processor 51D2, an example of a second digital processor, is connected between control terminal 132 and digital processors 53 and 55D. Specifically, the input terminal of digital processor 51D2 is connected to control terminal 132. The output terminal of digital processor 51D2 is connected to the input terminals of digital processors 53 and 55D. Digital processor 51D2 is capable of processing the digital control signal DS2 supplied from RFIC 3 via control terminal 132. Specifically, digital processor 51D2 is capable of converting the digital control signal DS2 into a digital control signal DS4D.

[0195] Digital processor 52 is included in semiconductor component 61. Digital processor 52 is connected between control terminal 131 and switching circuit 41 without passing through digital processor 51D1. Specifically, the input terminal of digital processor 52 is connected to control terminal 131 without passing through digital processor 51D1. The output terminal of digital processor 52 is connected to switching circuit 41. Digital processor 52 can process the digital control signal DS1 supplied from RFIC 3 via control terminal 131 and output a control signal for controlling switching circuit 41.

[0196] A digital processor 53 is included in the semiconductor component 62. The digital processor 53 is connected between the digital processor 51D2 and the switching circuit 42. Specifically, the input terminal of the digital processor 53 is connected to the output terminal of the digital processor 51D2. The output terminal of the digital processor 53 is connected to the switching circuit 42. The digital processor 53 can process the digital control signal DS4D supplied from the digital processor 51D2 and output a control signal for controlling the switching circuit 42.

[0197] A digital processor 54D is included in semiconductor component 63D. Digital processor 54D is connected between digital processor 51D1 and switching circuit 43. Specifically, the input terminal of digital processor 54D is connected to the output terminal of digital processor 51D1. The output terminal of digital processor 54D is connected to switching circuit 43. Digital processor 54D can process the digital control signal DS3D supplied from digital processor 51D1 and output a control signal for controlling switching circuit 43. Alternatively, digital processor 54D can also be disposed within semiconductor component 63D between switching circuits 43 and 44, similar to digital processor 54A.

[0198] Furthermore, the digital processor 54D can also be connected between the control terminal 131 and the switching circuit 43 without going through the digital processor 51D1. That is, the switching circuit 43 can also be connected to the control terminal 131 via the digital processor 54D instead of the digital processor 51D1. In this case, the digital processor 52 can also be connected between the digital processor 51D1 and the switching circuit 41. That is, the switching circuit 41 can also be connected to the output terminal of the digital processor 51D1 via the digital processor 52.

[0199] A digital processor 55D is included in semiconductor component 63D. Digital processor 55D is connected between digital processor 51D2 and switching circuit 44. Specifically, the input terminal of digital processor 55D is connected to the output terminal of digital processor 51D2. The output terminal of digital processor 55D is connected to switching circuit 44. Digital processor 55D can process the digital control signal DS4D supplied from digital processor 51D2 and output a control signal for controlling switching circuit 44. Alternatively, digital processor 55D can also be disposed within semiconductor component 63D between switching circuits 43 and 44, similar to digital processor 55A.

[0200] Digital control signal DS1 is an example of a first digital control signal, and in this embodiment, it is a control signal used for the first frequency band group. Digital control signal DS2 is an example of a second digital control signal, and in this embodiment, it is a control signal used for the second and third frequency band groups. Digital control signal DS3D is a control signal containing parallel data signals for the first frequency band group. Digital control signal DS4D is a control signal containing parallel data signals for the second and third frequency band groups.

[0201] [5.2. Leakage path of transmitted signal in high-frequency module 1D]

[0202] Reference Figure 11 An example of a leakage path of the transmitted signal in the high-frequency module 1D involved in this embodiment will be described. Figure 11 This diagram illustrates an example of a leakage path in the transmitted signal of the high-frequency module 1D according to this embodiment. Figure 11 In the diagram, dashed arrows indicate signal paths, and dotted arrows indicate leakage paths.

[0203] exist Figure 11 Simultaneously, signals in frequency band A are transmitted and signals in frequency band B are received. At this time, switch circuit 41 connects common terminal 410 to selection terminal 411, switch circuit 42 connects terminal 422 to terminal 423, switch circuit 43 connects common terminal 430 to selection terminal 431, and switch circuit 44 connects common terminal 440 to selection terminal 441.

[0204] Thus, the transmitted signal of band A is transmitted from the high-frequency input terminal 111 through the power amplifier 11, the switching circuit 41, the filter 31, and the switching circuit 43 to the antenna connection terminal 101. The received signal of band B is transmitted from the antenna connection terminal 102 through the switching circuit 44, the filter 32, the switching circuit 42, and the low-noise amplifier 22 to the high-frequency output terminal 122.

[0205] At this time, a portion of the transmitted signal in band A leaks into the receiving path of band B via switch circuit 41, digital processor 51D1, and switch circuit 44. However, since digital processor 51D1 is present in the leakage path, this leakage is reduced. That is, compared to the case where switch circuit 41 is connected to the output of digital processor 51D1, the isolation between switch circuits 41 and 44 is improved when switch circuit 41 is connected to control terminal 131 without passing through digital processor 51D1.

[0206] In particular, when the harmonic band of the transmission band of frequency band A overlaps at least partially with the receiving band of frequency band B, the leakage of the transmitted signal from frequency band A to the receiving path of frequency band B has a significant impact on reducing the receiving sensitivity of the signal in frequency band B. Under such conditions, suppressing the leakage of the transmitted signal from frequency band A to the receiving path of frequency band B via the transmission path of the control signal is highly effective.

[0207] [5.3. Summary]

[0208] As described above, the high-frequency module 1D according to this embodiment includes: a control terminal 131 for receiving a digital control signal DS1; a control circuit 50 connected to the control terminal 131; power amplifiers 11 and 12 connected to the control circuit 50; a filter 31 having a passband including the transmission band of frequency band A; a filter 32 having a passband including the transmission band of frequency band B; a switching circuit 41 included in a semiconductor component 61 and connected between the power amplifier 11 and the filter 31; and a switching circuit 42 included in a semiconductor component 62 and connected between the power amplifier 12 and the filter 31. Between the filter 32; a switching circuit 43, which is included in the semiconductor component 63D and connected between the filter 31 and the antenna connection terminal 101; and a switching circuit 44, which is included in the semiconductor component 63D and connected between the filter 32 and the antenna connection terminal 102, wherein the control circuit 50 includes a digital processor 51D1 configured to process the digital control signal DS1, one of the switching circuits 41 and 43 is connected to the output terminal of the digital processor 51D1, and the other of the switching circuits 41 and 43 is connected to the control terminal 131 without going through the digital processor 51D1.

[0209] Therefore, one of the switching circuits 41 and 43 is connected to the output of the digital processor 51D1, while the other of the switching circuits 41 and 43 is connected to the control terminal 131 without going through the digital processor 51D1. Thus, for a high-frequency signal to travel from the switching circuit 41 to the switching circuit 43 via the control signal transmission path, it must pass through the digital processor 51D1. That is, the connection between the switching circuits 41 and 43 via the control signal transmission path is blocked by the digital processor 51D1, thereby improving the isolation between the switching circuits 41 and 43. As a result, leakage of the transmission signal of frequency band A from the switching circuit 41 via the control signal transmission path and from the switching circuit 43 to the switching circuit 44 can be suppressed, thereby suppressing signal loss in frequency band A and preventing quality degradation.

[0210] Alternatively, for example, the high-frequency module 1D involved in this embodiment may also include a control terminal 132 for receiving digital control signal DS2, and the switching circuit 42 may also be connected to the control terminal 132.

[0211] Therefore, since switch circuit 42 is connected to a different control terminal 132 than switch circuit 41, the isolation between switch circuits 41 and 42 can be improved. As a result, leakage of the transmission signal of frequency band A from switch circuit 41 to switch circuit 42 through the transmission path of the control signal can be suppressed, and loss of the transmission signal of frequency band A can be suppressed, thereby suppressing quality degradation.

[0212] Alternatively, for example, in the high-frequency module 1D according to this embodiment, the control terminal 132 may also be connected to the control circuit 50, and the control circuit 50 may also include a digital processor 51D2 configured to process the digital control signal DS2, and the switching circuit 42 may also be connected to the control terminal 132 via the digital processor 51D2.

[0213] Therefore, the switching circuit 42 can be controlled based on the signal processed by the digital processor 51D2.

[0214] (Implementation Method 6)

[0215] Next, Embodiment 6 will be described. The main difference between this embodiment and Embodiment 5 is that the switching circuit 43 and the switching circuit 41 are housed in the same semiconductor component, and the coupler and the switching circuit for the coupler and the switching circuit 44 are housed in the same semiconductor component. Hereinafter, this embodiment will be described with reference to the accompanying drawings, focusing on the differences from Embodiment 5.

[0216] Furthermore, the communication device 5 according to this embodiment is the same as the communication device 5 according to Embodiment 1, except that it has a high-frequency module 1E instead of a high-frequency module 1. Therefore, the illustrations and descriptions of the structure of the communication device 5 according to this embodiment are omitted.

[0217] [6.1. Circuit Structure of High-Frequency Module 1E]

[0218] Reference Figure 12 The circuit structure of the high-frequency module 1E involved in this embodiment will be explained. Figure 12 This is a circuit structure diagram of the high-frequency module 1E involved in this embodiment.

[0219] also, Figure 12 The illustrated structure allows for the installation of the high-frequency module 1E using a wide variety of circuit mounting and circuit techniques. Therefore, the following description of the high-frequency module 1E should not be interpreted restrictively.

[0220] The high-frequency module 1E includes power amplifiers 11 and 12, low-noise amplifiers 21 and 22, filters 31, 32 and 33, switching circuits 41, 42, 43, 44 and 45E, coupler 46E, control circuit 50, digital processors 51D1, 51D2, 52B, 53, 55D and 56E, antenna connection terminals 101 and 102, high-frequency input terminals 111 and 112, high-frequency output terminals 121 and 122, control terminals 131 and 132, and feedback terminal 141.

[0221] Feedback terminal 141 is an external connection terminal of the high-frequency module 1E. Feedback terminal 141 is externally connected to RFIC 3 of the high-frequency module 1E. Additionally, feedback terminal 141 is internally connected to switching circuit 45E of the high-frequency module 1E. Thus, the high-frequency module 1E can feed back a portion of the high-frequency signal transmitted between antenna connection terminal 101 and switching circuit 43 to RFIC 3 via feedback terminal 141.

[0222] In this embodiment, similar to embodiment 3, the switching circuit 43 and the switching circuit 41 are included in the same semiconductor component 61B.

[0223] Coupler 46E is a bidirectional coupler included in semiconductor component 63E. Coupler 46E includes a main line 461, a secondary line 462, a forward coupling port 463, and a reverse coupling port 464.

[0224] The main line 461 is connected between the antenna connection terminal 101 and the switching circuit 43. Specifically, one end of the main line 461 is connected to the antenna connection terminal 101. The other end of the main line 461 is connected to the common terminal 430 of the switching circuit 43.

[0225] The secondary line 462 can be coupled to the primary line 461, connecting between the forward coupling port 463 and the reverse coupling port 464. Specifically, one end of the secondary line 462 is connected to the forward coupling port 463, and the other end of the secondary line 462 is connected to the reverse coupling port 464.

[0226] The forward coupling port 463 is a terminal used to output a portion of the high-frequency signal transmitted from the switching circuit 43 to the antenna connection terminal 101. The forward coupling port 463 is connected to the switching circuit 45E.

[0227] The reverse coupling port 464 is a terminal used to output a portion of the high-frequency signal transmitted from the antenna connection terminal 101 to the switching circuit 43. The reverse coupling port 464 is connected to the switching circuit 45E.

[0228] Switching circuit 45E is an example of a fifth switching circuit, included in the same semiconductor component 63E as switching circuit 44. It is capable of switching the forward and reverse outputs of coupler 46E. Specifically, switching circuit 45E includes terminals 451, 452, 453, and 454. Terminal 451 is connected to the forward coupling port 463 of coupler 46E. Terminal 452 is connected to the reverse coupling port 464 of coupler 46E. Terminal 453 is connected to feedback terminal 141. Terminal 454 terminates the connection. In the forward output of coupler 46E, switching circuit 45E connects terminals 451 and 453, and terminals 452 and 454. Conversely, in the reverse output of coupler 46E, switching circuit 45E connects terminals 451 and 454, and terminals 452 and 453.

[0229] Digital processor 56E is included in semiconductor component 63E and is connected between control terminal 131 and switching circuit 45E without passing through digital processor 51D1. Specifically, the input terminal of digital processor 56E is connected to control terminal 131 without passing through digital processor 51D1. The output terminal of digital processor 56E is connected to switching circuit 45E. Digital processor 56E can process the digital control signal DS1 supplied from RFIC 3 via control terminal 131 and output a control signal for controlling switching circuit 45E.

[0230] In such a high-frequency module 1E, when transmitting signals of frequency band A and receiving signals of frequency band B simultaneously, the digital processor 51D1 suppresses the leakage of signals of frequency band A from the switching circuit 41 to the receiving path of frequency band B.

[0231] [6.2. Summary]

[0232] As described above, the high-frequency module 1E according to this embodiment includes: a control terminal 131 for receiving a digital control signal DS1; a control circuit 50 connected to the control terminal 131; power amplifiers 11 and 12 connected to the control circuit 50; a filter 31 having a passband including the transmission band of frequency band A; a filter 32 having a passband including the transmission band of frequency band B; a switching circuit 41 included in a semiconductor component 61B and connected between the power amplifier 11 and the filter 31; a switching circuit 42 included in a semiconductor component 62 and connected between the power amplifier 12 and the filter 32; and a switching circuit 43 included in a semiconductor component 61B and connected between the filter 31 and the antenna. The control circuit 50 includes a switching circuit 44, which is included in a semiconductor component 63E and connected between the filter 32 and the antenna connection terminal 102; a coupler 46E, which is included in a semiconductor component 63E and connected between the switching circuit 43 and the antenna connection terminal 101; and a switching circuit 45E configured to switch the positive and negative outputs of the coupler 46E. The control circuit 50 includes a digital processor 51D1 configured to process the digital control signal DS1. One of the switching circuits 41 and 45E is connected to the output terminal of the digital processor 51D1, and the other of the switching circuits 41 and 45E is connected to the control terminal 131 without going through the digital processor 51D1.

[0233] Therefore, one of the switching circuits 41 and 45E is connected to the output terminal of the digital processor 51D1, while the other of the switching circuits 41 and 45E is connected to the control terminal 131 without going through the digital processor 51D1. Thus, for a high-frequency signal to reach the switching circuit 45E from the switching circuit 41 via the control signal transmission path, it must pass through the digital processor 51D1. That is, the connection between the switching circuits 41 and 45E via the control signal transmission path is blocked by the digital processor 51D1, thereby improving the isolation between the switching circuits 41 and 45E. As a result, leakage of the transmission signal of frequency band A from the switching circuit 41 via the control signal transmission path and the switching circuit 45E to the switching circuit 44 can be suppressed, thereby suppressing the loss of the transmission signal of frequency band A and suppressing quality degradation.

[0234] Alternatively, for example, the high-frequency module 1E according to this embodiment may also include a control terminal 132 for receiving digital control signal DS2, and the switching circuit 42 may also be connected to the control terminal 132.

[0235] Therefore, since switch circuit 42 is connected to a different control terminal 132 than switch circuit 41, the isolation between switch circuits 41 and 42 can be improved. As a result, leakage of the transmission signal of frequency band A from switch circuit 41 to switch circuit 42 through the transmission path of the control signal can be suppressed, and loss of the transmission signal of frequency band A can be suppressed, thereby suppressing quality degradation.

[0236] Alternatively, for example, in the high-frequency module 1E according to this embodiment, the control terminal 132 may also be connected to the control circuit 50, and the control circuit 50 may also include a digital processor 51D2 configured to process the digital control signal DS2, and the switching circuit 42 may also be connected to the control terminal 132 via the digital processor 51D2.

[0237] Therefore, the switching circuit 42 can be controlled based on the signal processed by the digital processor 51D2.

[0238] (Other implementation methods)

[0239] The high-frequency module of the present invention has been described above based on the embodiments, but the high-frequency module of the present invention is not limited to the above embodiments. Other embodiments implemented by combining any of the constituent elements in the above embodiments, variations of the above embodiments that can be conceived by those skilled in the art by implementing various modifications to the above embodiments without departing from the spirit of the present invention, and various devices that incorporate the above high-frequency module are also included in the present invention.

[0240] For example, in the circuit structure of the high-frequency module according to the above embodiments, other circuit elements and wiring may be inserted between the paths connecting the circuit elements and signal paths disclosed in the drawings. For example, an impedance matching circuit may be connected between the power amplifier 11 and the switching circuit 41, and / or between the power amplifier 12 and the switching circuit 42. Additionally, for example, an impedance matching circuit may be inserted between the filters 31 and 33 and the switching circuit 43, and / or between the filter 32 and the switching circuit 44. Furthermore, for example, a coupler may be connected between the switching circuit 43 and the antenna connection terminal 101, and / or between the switching circuit 44 and the antenna connection terminal 102.

[0241] Industrial availability

[0242] This invention, as a high-frequency module configured in the front end, can be widely used in communication devices such as portable telephones.

[0243] Explanation of reference numerals in the attached figures

[0244] 1, 1A, 1B, 1C, 1D, 1E High-Frequency Modules

[0245] Antennas 2a and 2b

[0246] 3 RFIC

[0247] 4 BBIC

[0248] 5 communication devices

[0249] 11, 12 Power Amplifiers

[0250] 21, 22 Low-noise amplifiers

[0251] Filters 31, 32, and 33

[0252] Switching circuits 41, 42, 43, 44, and 45E

[0253] 46E Coupler

[0254] 50 Control Circuit

[0255] 51, 51C, 51D1, 51D2, 52, 52B, 52C, 53, 53C, 54, 54A, 54C, 54D, 55A, 55D, 56E Digital Processors

[0256] Semiconductor components 61, 61B, 62, 63, 63A, 63B, 63D, 63E, 64, 65, 71, 72

[0257] 90 Module Baseboard

[0258] 90a, 90b Main face

[0259] 91 External connection terminal

[0260] 92, 92A, 93 control lines

[0261] Antenna connection terminals 101 and 102

[0262] 111, 112 High-frequency input terminals

[0263] 121, 122 High-frequency output terminals

[0264] 131, 132 control terminals

[0265] 141 Feedback Terminal

[0266] 410, 430, 440 share a common terminal

[0267] 411, 431, 441 Select Terminals

[0268] 421, 422, 423, 451, 452, 453, 454 terminals

[0269] 461 Main Line

[0270] 462 Sub-line

[0271] 463 Forward Coupled Port

[0272] 464 Reverse Coupling Port

[0273] DS1, DS2, DS2C, DS3, DS3D, DS4D digital control signals

Claims

1. A high-frequency module, comprising: A first control terminal is used to receive a first digital control signal; A control circuit, which is connected to the first control terminal; A first power amplifier and a second power amplifier connected to the control circuit; A first filter having a passband that includes the transmission frequency band of a first frequency band; The second filter has a passband that includes the transmission frequency band of the second frequency band; A first switching circuit is included in a first semiconductor component and connected between the first power amplifier and the first filter; as well as A second switching circuit, included in a second semiconductor component, is connected between the second power amplifier and the second filter. The control circuit includes a first digital processor configured to process the first digital control signal. One of the first switching circuit and the second switching circuit is connected to the output terminal of the first digital processor. The other of the first and second switching circuits is connected to the first control terminal without going through the first digital processor.

2. The high-frequency module according to claim 1, wherein, The high-frequency module also includes a second control terminal for receiving a second digital control signal, the second control terminal being connected to the control circuit. The first digital processor is configured to combine the first digital control signal and the second digital control signal to output a third digital control signal. The first frequency band is included in the first frequency band group. The second frequency band is included in a second frequency band group or a third frequency band group that is higher than the first frequency band group. The first switching circuit is connected to the first control terminal without going through the first digital processor. The second switching circuit is connected to the output terminal of the first digital processor.

3. The high-frequency module according to claim 2, wherein, The first digital control signal, the second digital control signal, and the third digital control signal each contain a serial data signal.

4. The high-frequency module according to claim 2 or 3, wherein, The high-frequency module also features: A second digital processor is included in the first semiconductor component and is connected between the first control terminal and the first switching circuit without passing through the first digital processor, configured to process the first digital control signal; as well as A third digital processor, which is included in the second semiconductor component and connected between the first digital processor and the second switching circuit, is configured to process the third digital control signal.

5. The high-frequency module according to any one of claims 2 to 4, wherein, The high-frequency module also features: A third switching circuit is connected between the first filter and the first antenna connection terminal; and The fourth switching circuit is connected between the second filter and the second antenna connection terminal. The third and fourth switching circuits are connected to the output terminal of the first digital processor.

6. The high-frequency module according to claim 5, wherein, The high-frequency module also includes a fourth digital processor, which is connected between the first digital processor and the third switching circuit, and is configured to process the third digital control signal. The fourth digital processor, the third switching circuit, and the fourth switching circuit are included in the third semiconductor component. Within the third semiconductor component, the fourth digital processor is disposed between the third switching circuit and the fourth switching circuit.

7. The high-frequency module according to any one of claims 2 to 4, wherein, The high-frequency module also features: A third switching circuit is connected between the first filter and the first antenna connection terminal; and The fourth switching circuit is connected between the second filter and the second antenna connection terminal. The third switching circuit is connected to the first control terminal without going through the first digital processor. The fourth switching circuit is connected to the output terminal of the first digital processor.

8. The high-frequency module according to claim 7, wherein, The high-frequency module also features: A fourth digital processor is connected between the first control terminal and the third switching circuit without passing through the first digital processor, and is configured to process the first digital control signal. as well as A fifth digital processor, connected between the first digital processor and the fourth switching circuit, is configured to process the third digital control signal. The fourth digital processor, the fifth digital processor, the third switching circuit, and the fourth switching circuit are all included in the third semiconductor component. Within the third semiconductor component, the fourth digital processor and the fifth digital processor are configured between the third switching circuit and the fourth switching circuit.

9. The high-frequency module according to claim 7, wherein, The third switching circuit is included in the first semiconductor component.

10. The high-frequency module according to claim 1, wherein, The first digital processor is configured to convert the first digital control signal into a second digital control signal. The first digital control signal includes a serial data signal. The second digital control signal includes parallel data signals. The first frequency band is included in the first frequency band group. The second frequency band is included in a second frequency band group or a third frequency band group that is higher than the first frequency band group. The first switching circuit is connected to the output terminal of the first digital processor. The second switching circuit is connected to the first control terminal without going through the first digital processor.

11. The high-frequency module according to claim 10, wherein, The high-frequency module also features: The second digital processor is included in the first semiconductor component and connected between the first digital processor and the first switching circuit, and is configured to process the second digital control signal; as well as A third digital processor, which is included in the second semiconductor component, is connected between the first control terminal and the second switching circuit without passing through the first digital processor, and is configured to process the first digital control signal.

12. The high-frequency module according to claim 10 or 11, wherein, The high-frequency module also features: A third switching circuit is connected between the first filter and the first antenna connection terminal; and The fourth switching circuit is connected between the second filter and the second antenna connection terminal. The third and fourth switching circuits are connected to the first control terminal without going through the first digital processor.

13. The high-frequency module according to claim 12, wherein, The high-frequency module further includes a fourth digital processor, which is connected between the first control terminal and the third and fourth switching circuits without passing through the first digital processor, and is configured to process the first digital control signal. The fourth digital processor, the third switching circuit, and the fourth switching circuit are included in the third semiconductor component. Within the third semiconductor component, the fourth digital processor is disposed between the third switching circuit and the fourth switching circuit.

14. The high-frequency module according to any one of claims 1 to 13, wherein, The first frequency band and the second frequency band are a combination of frequency bands that can communicate simultaneously.

15. The high-frequency module according to claim 14, wherein, The high-frequency module also features a low-noise amplifier. The second frequency band is the time division duplex (TDD) band. The second switching circuit includes a first terminal connected to the second power amplifier, a second terminal connected to the low-noise amplifier, and a third terminal connected to the second filter.

16. The high-frequency module according to claim 15, wherein, The harmonic band of the transmission frequency band of the first frequency band at least partially overlaps with that of the second frequency band.

17. A high-frequency module, comprising: A first control terminal is used to receive a first digital control signal; A control circuit, which is connected to the first control terminal; A first power amplifier and a second power amplifier connected to the control circuit; A first filter having a passband that includes the transmission frequency band of a first frequency band; The second filter has a passband that includes the transmission frequency band of the second frequency band; A first switching circuit is included in a first semiconductor component and connected between the first power amplifier and the first filter; The second switching circuit is included in the second semiconductor component and is connected between the second power amplifier and the second filter; A third switching circuit is included in a third semiconductor component and is connected between the first filter and the first antenna connection terminal. as well as A fourth switching circuit, included in the third semiconductor component, is connected between the second filter and the second antenna connection terminal. The control circuit includes a first digital processor configured to process the first digital control signal. One of the first switching circuit and the third switching circuit is connected to the output terminal of the first digital processor. The other of the first and third switching circuits is connected to the first control terminal without going through the first digital processor.

18. A high-frequency module, comprising: A first control terminal is used to receive a first digital control signal; A control circuit, which is connected to the first control terminal; A first power amplifier and a second power amplifier connected to the control circuit; A first filter having a passband that includes the transmission frequency band of a first frequency band; The second filter has a passband that includes the transmission frequency band of the second frequency band; A first switching circuit is included in a first semiconductor component and connected between the first power amplifier and the first filter; The second switching circuit is included in the second semiconductor component and is connected between the second power amplifier and the second filter; A third switching circuit is included in the first semiconductor component and connected between the first filter and the first antenna connection terminal; A fourth switching circuit, which is included in the third semiconductor component, is connected between the second filter and the second antenna connection terminal; A coupler, included in the third semiconductor component, is connected between the third switching circuit and the first antenna connection terminal; as well as The fifth switching circuit is configured to switch the forward and reverse outputs of the coupler. The control circuit includes a first digital processor configured to process the first digital control signal. One of the first switching circuit and the fifth switching circuit is connected to the output terminal of the first digital processor. The other of the first and fifth switching circuits is connected to the first control terminal without going through the first digital processor.

19. The high-frequency module according to claim 17 or 18, wherein, The high-frequency module also includes a second control terminal for receiving a second digital control signal. The second switching circuit is connected to the second control terminal.

20. The high-frequency module according to claim 19, wherein, The second control terminal is connected to the control circuit. The control circuit further includes a second digital processor configured to process the second digital control signal. The second switching circuit is connected to the second control terminal via the second digital processor.

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