High-precision eutectic patch device intelligent control system

CN122952574APending Publication Date: 2026-10-20MIAID PRECISION TECHNOLOGY (SUZHOU) CO LTD
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Patent Information

Application Number
CN202611228666.1
Authority / Receiving Office
CN · China
Patent Type
Applications(China)
Current Assignee / Owner
Filing Date
2026-08-13
Publication Date
2026-10-20

AI Technical Summary

Technical Problem

[0009]本发明提供一种高精度共晶贴片设备智能控制系统,解决现有共晶贴片设备热变形补偿精度低、对位误差大、无精准微调功能,导致贴片精度差、产品良率低的技术问题

Benefits of technology

[0018]本发明提供的一种高精度共晶贴片设备智能控制系统,与现有技术相比,其有益效果为:本发明针对性适配工业化连续量产工况,充分考虑共晶贴片作业中加热台长期高温工作、实时温度动态波动的工况特性,摒弃传统仅依靠平台预设坐标完成单次对位调节,采用三阶多项式热变形模型进行热偏移位移计算,可精准拟合加热台在不同温度、不同温升状态下的非线性热变形规律,实时动态补偿X向、Y向双向热偏移误差,彻底解决传统设备无法适配温度波动、热变形补偿不准,导致基板长距离移动对位后累积偏移、贴片精度差的核心问题,极大提升高温连续作业下的贴片对位精度与温度抗干扰能力,补偿精度可达±0.5μm,整体贴片对位精度可提升至±1μm以内,相较于传统设备精度提升80%以上,有效解决高温贴片偏移、虚焊等不良问题,产品良率显著提升。

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Abstract

This invention provides an intelligent control system for a high-precision eutectic bonding equipment, including a chip transport component, a substrate transport component, a bonding component, a substrate storage component, a controller, and a detection component. The controller has a built-in data processing unit. The data processing unit calculates the required X-axis and Y-axis movement distances for the substrate positioning platform to move directly below the chip to be bonded, based on the initial coordinates of the substrate and the chip, as well as the X-axis and Y-axis thermal offset displacements. The controller sends execution commands according to the calculation results of the data processing unit, solving the technical problems of low thermal deformation compensation accuracy, large alignment error, and lack of precise fine-tuning function in existing eutectic bonding equipment, which lead to poor bonding accuracy and low product yield.
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Description

Technical Field

[0001] This invention relates to the field of semiconductor chip mounting equipment technology, and in particular to an intelligent control system for a high-precision eutectic chip mounting equipment. Background Technology

[0002] Eutectic bonding is a core process in semiconductor packaging and optoelectronic device assembly. With its advantages of low welding stress, good thermal conductivity and high connection reliability, it is widely used in the precision assembly and production of high-end chips, laser devices and microwave devices.

[0003] During eutectic bonding, the substrate needs to be precisely heated by a heating stage to achieve eutectic bonding between the chip and the substrate. The alignment accuracy of the bonding directly determines the packaging quality and performance of the device. In the standardized layout of high-end precision eutectic bonding equipment, the industry generally adopts a structural design of "chip fixed-point gripping and long-distance movement of the substrate platform for alignment," rather than long-distance chip movement for alignment. The core reason is that chips are tiny, extremely thin, and brittle. If a long-distance, high-speed chip movement method is used, problems such as chip misalignment, edge chipping, breakage, and attitude deviation are likely to occur. Moreover, the long-distance reciprocating motion of the chip gripping nozzle is prone to vibration and positioning drift, making it difficult to guarantee micron-level alignment accuracy. On the other hand, the substrate is larger, more rigid, and has better load-bearing stability. Alignment is completed by the overall translation of the heating stage and the substrate positioning platform, which can maximize the protection of the precision chip body. At the same time, it matches the layout of automated loading and unloading stations and is suitable for continuous production lines, making it the optimal structural choice for high-precision eutectic bonding equipment.

[0004] Currently, most conventional eutectic bonding equipment control systems on the market adopt a fixed coordinate alignment control mode, relying solely on visual single-positioning to complete the alignment and bonding of the chip and the substrate. They are not specifically adapted to the long-distance movement characteristics of the substrate and ignore the high-temperature thermal disturbance problem under continuous mass production conditions.

[0005] In actual industrial continuous operation, the heating table needs to maintain the high temperature required for the eutectic process for a long time and cannot be frequently started and stopped to cool down. Affected by factors such as ambient temperature fluctuations, uneven heat dissipation of equipment, and continuous power-on heat generation, the temperature of the heating table always has small dynamic fluctuations and is not a constant temperature state.

[0006] Real-time temperature fluctuations cause dynamic, non-linear, micro-thermal expansion and contraction deformation of the heating stage and the substrate platform. The longer the substrate travels and the longer the continuous operation, the more obvious the cumulative error of thermal offset becomes. Conventional linear compensation algorithms cannot accurately match the real-time dynamic thermal deformation state, which ultimately leads to the continuous accumulation of misalignment between the substrate and the fixed-point chip, resulting in frequent defects such as chip misalignment, cold solder joints, misalignment, and uneven bonding, resulting in extremely poor consistency in mass production.

[0007] Meanwhile, traditional equipment relies solely on preset coordinates on the platform to complete a single alignment adjustment. Especially in the case of long-stroke movement and alignment of the substrate, the errors caused by mechanical transmission gaps, high-temperature thermal deformation, and temperature fluctuations will be further amplified. This makes it completely unable to meet the mass production requirements of micron-level high-precision eutectic bonding. The product processing yield is low, the batch stability is poor, and it cannot be adapted to the precision packaging production scenarios of high-end semiconductor devices and optoelectronic devices.

[0008] Therefore, it is necessary to improve the existing control system to overcome the above-mentioned defects. Summary of the Invention

[0009] This invention provides an intelligent control system for a high-precision eutectic bonding equipment, which solves the technical problems of low thermal deformation compensation accuracy, large alignment error, and lack of precise fine-tuning function in existing eutectic bonding equipment, resulting in poor bonding accuracy and low product yield.

[0010] To achieve the above objectives, in a first aspect, this application provides an intelligent control system for a high-precision eutectic bonding equipment, including a chip delivery assembly, a substrate delivery assembly, a bonding assembly, and a substrate storage assembly. The bonding assembly includes a substrate positioning platform, a heating stage fixedly disposed below the substrate positioning platform, and a first moving mechanism for driving the heating stage to move in the X and Y directions. The chip delivery assembly includes a first vertical gripper, a second moving mechanism for driving the first vertical gripper to move in the X and Y directions, and a first suction cup disposed on the first vertical gripper. The substrate delivery assembly includes a second vertical gripper, a third moving mechanism for driving the second vertical gripper to move in the X and Y directions, and a second suction cup disposed on the second vertical gripper. It also includes a controller and a detection component. The detection component includes a first vision detection component mounted on the first vertical gripper, a second vision detection component mounted on the second vertical gripper, and a temperature detection component for detecting the real-time temperature of the heating platform. The controller has a built-in data processing unit, which calculates the initial coordinates of the substrate based on a photograph taken by the second vision detection component showing the substrate to be bonded located on the substrate positioning platform. ), and calculate the initial coordinates of the chip based on the photograph of the chip to be patched captured by the first visual detection component. Based on the acquired heating stage temperature, the X-axis thermal offset displacement and Y-axis thermal offset displacement are calculated. Based on the initial coordinates of the substrate and the chip, the X-axis thermal offset displacement and Y-axis thermal offset displacement are calculated to determine the required X-axis and Y-axis moving distances for the substrate positioning platform to move directly below the chip to be mounted. The controller sends an execution command to the first moving mechanism based on the calculation results of the data processing unit.

[0011] Optionally, the data processing unit calculates the thermal offset displacement based on a third-order polynomial thermal deformation model.

[0012] Optionally, the X-axis thermal offset displacement The Y-axis thermal offset displacement ,in Let X be the first-order thermal expansion coefficient. The coefficient of second-order thermal expansion in the X direction is... The third-order thermal expansion coefficient in the X direction is... The first-order thermal expansion coefficient in the Y direction is... The coefficient of second-order thermal expansion in the Y direction is... Let T be the third-order thermal expansion coefficient in the Y direction, and T be the real-time temperature detected by the heating platform. This is the reference temperature for the heating platform.

[0013] Optionally, the X-axis movement distance The distance of movement in the Y direction .

[0014] Optionally, the data processing unit calculates the initial coordinates of the substrate or the initial coordinates of the chip based on the captured photo, including preprocessing the photo to extract feature Mark points and outputting pixel coordinates, and obtaining the initial coordinates of the substrate or the initial coordinates of the chip based on the pixel coordinates through a two-dimensional static affine coordinate transformation model.

[0015] Optionally, a piezoelectric fine-tuning module for adjusting the X-axis and Y-axis positions of the first suction cup is provided between the first vertical gripper and the first suction cup.

[0016] Optionally, it further includes a positioning mechanism for positioning the patch assembly. After the first moving mechanism executes the control command issued by the controller, the controller controls the positioning mechanism to position the patch assembly. At the same time, the controller controls the first vision inspection component to take a picture of the substrate to be patched. The data processing unit obtains the picture of the substrate to be patched located on the substrate positioning platform taken by the first vision inspection component and calculates the final coordinates of the substrate. The controller calculates the X-axis and Y-axis fine-tuning distances of the first suction cup and sends an execution command to the piezoelectric fine-tuning module based on the calculation results of the data processing unit.

[0017] Optionally, the piezoelectric fine-tuning module includes an X-axis piezoelectric ceramic driving unit and a Y-axis piezoelectric ceramic driving unit.

[0018] The present invention provides a high-precision intelligent control system for eutectic bonding equipment. Compared with existing technologies, its advantages are as follows: The present invention is specifically adapted to industrial continuous mass production conditions, fully considering the characteristics of the heating stage operating at high temperatures for a long time and experiencing real-time temperature fluctuations during eutectic bonding operations. It abandons the traditional method of relying solely on preset coordinates of the platform to complete a single alignment adjustment, and adopts a third-order polynomial thermal deformation model to calculate thermal offset displacement. This model can accurately fit the nonlinear thermal deformation law of the heating stage under different temperatures and temperature rise conditions, and dynamically compensate for bidirectional thermal offset errors in the X and Y directions in real time. It completely solves the core problem of traditional equipment being unable to adapt to temperature fluctuations and inaccurate thermal deformation compensation, resulting in cumulative offset after long-distance substrate movement and poor bonding accuracy. This greatly improves the bonding alignment accuracy and temperature anti-interference capability under high-temperature continuous operation, with a compensation accuracy of ±0.5μm and an overall bonding alignment accuracy of within ±1μm, which is more than 80% higher than that of traditional equipment. It effectively solves problems such as high-temperature bonding offset and poor soldering, and significantly improves product yield. Attached Figure Description

[0019] The accompanying drawings, which form part of this application, are used to provide a further understanding of the application and to make other features, objects, and advantages of the application more apparent. The illustrative embodiments and descriptions of this application are used to explain the application and do not constitute an undue limitation of the application. In the drawings: Figure 1 This is a system structure diagram of the present invention; Figure 2 This is a schematic diagram of a piezoelectric fine-tuning module.

[0020] The components include: 1. Chip delivery assembly; 2. Substrate delivery assembly; 3. Patch assembly; 4. Substrate storage assembly; 6. First vertical gripper; 7. Second vertical gripper; 8. First vision inspection assembly; 9. Second vision inspection assembly; 10. Piezoelectric fine-tuning module; and 11. Positioning mechanism. Detailed Implementation

[0021] To enable those skilled in the art to better understand the present application, the technical solutions in the embodiments of the present application will be clearly and completely described below with reference to the accompanying drawings. Obviously, the described embodiments are only some embodiments of the present application, and not all embodiments. Based on the embodiments in the present application, all other embodiments obtained by those of ordinary skill in the art without creative effort should fall within the scope of protection of the present application.

[0022] It should be noted that the terms "first," "second," etc., in the specification, claims, and accompanying drawings of this application are used to distinguish similar objects and are not necessarily used to describe a specific order or sequence. It should be understood that such data can be interchanged where appropriate for the embodiments of this application described herein. Furthermore, the terms "comprising" and "having," and any variations thereof, are intended to cover non-exclusive inclusion; for example, a process, method, system, product, or apparatus that comprises a series of steps or units is not necessarily limited to those steps or units explicitly listed, but may include other steps or units not explicitly listed or inherent to such processes, methods, products, or apparatus.

[0023] In this application, the terms "upper," "lower," "left," "right," "front," "rear," "top," "bottom," "inner," "outer," "middle," "vertical," "horizontal," "lateral," and "longitudinal" indicate the orientation or positional relationship based on the orientation or positional relationship shown in the accompanying drawings. These terms are primarily for the purpose of better describing this application and its embodiments, and are not intended to limit the indicated device, element, or component to having a specific orientation, or to be constructed and operated in a specific orientation.

[0024] Furthermore, in addition to indicating location or positional relationship, some of the aforementioned terms may also have other meanings. For example, the term "above" may also be used in some cases to indicate a certain dependency or connection relationship. Those skilled in the art can understand the specific meaning of these terms in this application based on the specific circumstances.

[0025] In addition, the term "multiple" should mean two or more.

[0026] It should be noted that, unless otherwise specified, the embodiments and features described in this application can be combined with each other. This application will now be described in detail with reference to the accompanying drawings and embodiments.

[0027] like Figure 1 As shown, the present invention provides a high-precision eutectic bonding equipment intelligent control system, including a chip delivery assembly 1, a substrate delivery assembly 2, a bonding assembly 3, and a substrate storage assembly 4. The bonding assembly 3 includes a substrate positioning platform, a heating stage fixedly disposed below the substrate positioning platform, and a first moving mechanism for driving the heating stage to move in the X and Y directions. The chip delivery assembly 1 includes a first vertical gripper 6, a second moving mechanism for driving the first vertical gripper 6 to move in the X and Y directions, and a first suction cup disposed on the first vertical gripper 6. The substrate delivery assembly 2 includes a second vertical gripper 7, a third moving mechanism for driving the second vertical gripper 7 to move in the X and Y directions, and a second suction cup disposed on the second vertical gripper 7. The working principle of this equipment is as follows: First, the operator places the substrates sequentially on the substrate storage component 4. The substrate transport component 2 then moves the substrates from the substrate storage component 4 to the substrate positioning platform of the mounting component 3 according to a pre-set program. The basic positioning platform fixes the substrates using negative pressure adsorption or positioning components, completing the first step of substrate transport. In the second step, the chip transport component 1 removes the chips one by one from the chip storage unit to the mounting station. Finally, the mounting component 3, driven by the first moving mechanism, moves to the mounting position, i.e., below the chip to be mounted. At this point, the first vertical gripping component moves downwards, causing the chip to adhere to the substrate. Friction-assisted eutectic bonding completes the chip mounting process. Friction-assisted eutectic bonding involves the chip nozzle making small reciprocating movements, causing the chip to slide slightly relative to the molten eutectic solder. This helps to break through the oxide layer, promote solder wetting, and reduce voids. This friction-assisted bonding stage removes oxidation. After bonding, the substrate transport unit removes the mounted component from the bonding assembly 3 and transports it to the substrate storage assembly 4 at the position where no substrate is placed. The substrate storage assembly 4 serves as both substrate storage and finished product recycling assembly. Subsequent material handling involves manual loading and unloading, while new substrates are transported to the bonding assembly 3 for the next round of bonding.

[0028] Due to continuous operation and the need to improve efficiency, this embodiment employs a dual-mount assembly 3 method, i.e., cyclical alternating operation. Since the heating stage maintains a consistently high temperature, and considering the dynamic thermal offset issues caused by long-distance substrate movement and alignment, and temperature fluctuations during continuous high-temperature operation, the following design was implemented: In addition to the aforementioned structure, this invention also includes a controller and a detection component. The detection component includes a first visual detection component 8 mounted on the first vertical gripper 6, a second visual detection component 9 mounted on the second vertical gripper 7, and a temperature detection component for detecting the real-time temperature of the heating platform. The controller has a built-in data processing unit, which calculates the initial coordinates of the substrate based on a photograph taken by the second visual detection component 9 of the substrate to be bonded located on the substrate positioning platform. ), and calculate the initial coordinates of the chip based on the photograph of the chip to be attached captured by the first visual detection component 8. Based on the acquired heating stage temperature, the X-axis thermal offset displacement and Y-axis thermal offset displacement are calculated. Based on the initial coordinates of the substrate and the chip, the X-axis thermal offset displacement and Y-axis thermal offset displacement are calculated to determine the required X-axis and Y-axis moving distances for the substrate positioning platform to move directly below the chip to be mounted. The controller sends an execution command to the first moving mechanism based on the calculation results of the data processing unit.

[0029] Regarding the calculation of thermal offset displacement, this invention innovatively uses a third-order polynomial thermal deformation model for calculation. Specifically, the X-axis thermal offset displacement... The Y-axis thermal offset displacement ,in Let X be the first-order thermal expansion coefficient. The coefficient of second-order thermal expansion in the X direction is... The third-order thermal expansion coefficient in the X direction is... The first-order thermal expansion coefficient in the Y direction is... The coefficient of second-order thermal expansion in the Y direction is... Let T be the third-order thermal expansion coefficient in the Y direction, and T be the real-time temperature detected by the heating platform. This is the reference temperature for the heating platform.

[0030] The aforementioned third-order model fits the basic linear thermal expansion deformation with a first-order term, fits the nonlinear deformation deviation in the mid-temperature region with a second-order term, and fits the severe distortion and temperature fluctuation disturbance error in the high-temperature region with a third-order term. It fully covers the thermal deformation characteristics of the commonly used temperature range of 0-300℃ in the eutectic process. It is especially suitable for dynamic residual deformation caused by small temperature fluctuations and uneven temperature rise during continuous operation of equipment. At the same time, it can effectively correct the thermal offset error accumulated during long-distance movement of the substrate.

[0031] All thermal expansion coefficient parameters in this invention were obtained through equipment calibration tests. The specific calibration method is as follows: During the equipment factory calibration phase, multiple sets of gradient calibration temperature points were selected, covering the entire process range of low temperature, medium temperature, and high temperature. After each set of temperatures stabilized, it was kept at a constant temperature for a preset time to eliminate temperature rise lag error. Specifically, with the equipment unloaded, the heating platform was heated from 25°C to 550°C in steps. After stabilizing at 50°C for 3 minutes, the calibration plate Mark was photographed, and the X / Y offset at each temperature was recorded. The temperature rise difference (… Using ) as the independent variable and the offset as the dependent variable, a least-squares third-order polynomial fit is performed to obtain ( , , , , , This calibration method is then integrated into the controller's data processing unit. It closely matches the actual mechanical structure and thermal characteristics of the equipment, avoiding the mismatch between theoretically calculated parameters and actual operating conditions, and ensuring compensation accuracy under different temperature fluctuations.

[0032] After completing the thermal offset calculation, the system combines the initial coordinates of the substrate and the initial coordinates of the chip obtained by high-precision coordinate transformation, and uses a compensation algorithm to fit and solve the precise X and Y movement distances of the substrate positioning platform. The calculation formula integrates the benchmark alignment deviation and the real-time thermal offset to achieve complete cancellation of thermal errors. Subsequently, the controller sends a drive command to the first moving mechanism to drive the heating stage and the substrate positioning platform to complete the high-precision coarse alignment movement.

[0033] The X-direction movement distance The distance of movement in the Y direction Then the controller controls the X-axis movement of the first moving mechanism. Its Y-axis movement After coarse positioning is achieved, the following positioning mechanism is used to position the patch assembly 3, so that the basic position no longer changes until the patch is completed.

[0034] Regarding the data processing unit calculating the initial coordinates of the substrate or the chip based on the captured photo, this includes preprocessing the photo to extract feature Mark points and outputting pixel coordinates, where the substrate pixel coordinates are ( The chip pixel coordinates are ( The initial coordinates of the substrate or the chip are obtained from the pixel coordinates using a two-dimensional static affine coordinate transformation model. The specific affine formula for this model is as follows: , , , ,about , as well as The calibration instructions are as follows: The equipment should be shut down and allowed to cool fully to room temperature (25℃), with the heating table not started; the gantry and Z-axis motion mechanisms should be fully cooled, with no temperature rise or deformation of the entire machine. The mounting head, carrying the calibration plate, should select nine calibration points evenly distributed in a 3×3 matrix within the camera's field of view, covering the four corners and center of the camera's effective imaging area, filling the entire field of view as much as possible to reduce edge mapping distortion errors; sample data should be collected point by point, completing the data collection for all nine points sequentially, obtaining nine sets of independent samples. Substituting the collected samples into the affine formula, nine equations are obtained in the X-coordinate direction; the optimal coefficients are solved using least squares, and the result is the final value. , as well as The baseline parameters, in addition , as well as The calibration process is the same.

[0035] like Figure 2As shown, a piezoelectric fine-tuning module 10 for adjusting the X-axis and Y-axis positions of the first suction cup is provided between the first vertical gripper 6 and the first suction cup.

[0036] Optionally, it also includes a positioning mechanism 11 for positioning the patch assembly 3. After the first moving mechanism executes the control command issued by the controller, the controller controls the positioning mechanism to position the patch assembly 3. At the same time, the controller controls the first vision inspection component 8 to take a picture of the substrate to be patched. The data processing unit obtains the picture of the substrate to be patched located on the substrate positioning platform taken by the first vision inspection component 8 and calculates the final coordinates of the substrate. The controller calculates the X-axis fine-tuning distance and Y-axis fine-tuning distance of the first suction cup, and sends an execution command to the piezoelectric fine-tuning module 10 based on the calculation results of the data processing unit.

[0037] After completing the platform thermal error compensation and coarse alignment based on the third-order polynomial thermal deformation model, this invention further sets up a high-precision fine-tuning correction stage. Specifically, a piezoelectric fine-tuning module 10 is added between the first vertical gripper 6 and the first suction cup to achieve micron-level precision adjustment of the chip adsorption posture. However, relying solely on the overall X / Y movement compensation of the heating stage still leaves residual errors that cannot be eliminated. Therefore, a piezoelectric fine-tuning mechanism must be added for secondary fine-tuning. Thus, the third-order polynomial compensation of the heating stage can only eliminate the overall, macroscopic temperature thermal offset error of the platform. However, during continuous high-temperature operation and dynamic temperature fluctuations, there are still small nonlinear residual thermal deformations. These residual errors cannot be corrected by the platform's large-stroke movement mechanism. Furthermore, the substrate alignment stroke is long, and the linear guide rails, lead screws, and other transmission mechanisms have micron-level mechanical backlash and assembly errors. After long-distance movement, the errors will accumulate and be amplified. Ordinary servo movement mechanisms have limited resolution and cannot achieve ultra-micro correction. Moreover, there are pixel-level tiny sampling errors during visual positioning and coordinate transformation. Simply relying on the platform's coarse alignment is insufficient to meet the micron-level bonding requirements of eutectic bonding.

[0038] Based on the superposition of the above-mentioned multiple residual errors, the present invention adds a piezoelectric fine-tuning module 10 as an end-effector correction unit. By utilizing the high-precision, gapless, and ultra-fast deformation characteristics of piezoelectric ceramics, the X and Y directions of the first suction cup are precisely adjusted in a micro-direction. This constitutes a dual-layer high-precision control system that combines macroscopic thermal error model compensation with microscopic piezoelectric end-effector correction.

[0039] The piezoelectric fine-tuning module 10 includes an X-axis piezoelectric ceramic driving unit and a Y-axis piezoelectric ceramic driving unit, which respectively realize bidirectional independent precision displacement output of the first suction cup plane. Its specific control and operation process is as follows: After the first moving mechanism fully executes the controller's coarse alignment movement command, the substrate positioning platform moves to the theoretical target position. At this time, the controller first controls the external positioning mechanism to mechanically lock and position the entire patch assembly 3 and the substrate positioning platform, locking the platform's mechanical degrees of freedom and completely eliminating the problem of platform displacement shifting and vibration offset during subsequent fine-tuning, ensuring that the reference is absolutely fixed. After mechanical positioning is completed and the equipment's reference posture is stable, the controller immediately starts the secondary visual sampling process, controlling the first visual detection component 8 to capture high-definition images of the substrate to be patched on the current substrate positioning platform, acquiring the final actual position image of the substrate in real time. After receiving the real-time image, the data processing unit again completes image preprocessing, feature mark point extraction, and two-dimensional static affine coordinate transformation to accurately solve for the final actual coordinates of the substrate.

[0040] The data processing unit performs difference calculations between the final actual coordinates of the substrate and the system's preset standard bonding reference coordinates to accurately calculate the residual deviation of the current alignment system, namely the X-axis fine-tuning distance and Y-axis fine-tuning distance required by the first suction cup. This fine-tuning distance is a micrometer-level ultra-small displacement, perfectly matching the effective stroke and control accuracy range of the piezoelectric ceramic drive unit. Subsequently, the controller generates corresponding high-precision voltage drive signals and outputs them to the X-axis piezoelectric ceramic drive unit and the Y-axis piezoelectric ceramic drive unit, respectively. Based on the linear correspondence between the input voltage amplitude and displacement, the piezoelectric ceramic drive unit generates precise micro-deformation, directly driving the first suction cup to complete precise displacement compensation in the corresponding direction, offsetting the system's residual thermal error, mechanical error, and visual sampling error.

[0041] The above description is merely a preferred embodiment of this application and is not intended to limit this application. Various modifications and variations can be made to this application by those skilled in the art. Any modifications, equivalent substitutions, improvements, etc., made within the spirit and principles of this application should be included within the protection scope of this application.

Claims

1. An intelligent control system for a high-precision eutectic bonding machine, characterized in that, The system includes a chip delivery assembly, a substrate delivery assembly, a chip mounting assembly, and a substrate storage assembly. The chip mounting assembly includes a substrate positioning platform, a heating stage fixedly disposed below the substrate positioning platform, and a first moving mechanism that drives the heating stage to move in the X and Y directions. The chip delivery assembly includes a first vertical gripper, a second moving mechanism that drives the first vertical gripper to move in the X and Y directions, and a first suction cup disposed on the first vertical gripper. The substrate delivery assembly includes a second vertical gripper, a third moving mechanism that drives the second vertical gripper to move in the X and Y directions, and a second suction cup disposed on the second vertical gripper. It also includes a controller and a detection component. The detection component includes a first vision detection component mounted on the first vertical gripper, a second vision detection component mounted on the second vertical gripper, and a temperature detection component for detecting the real-time temperature of the heating platform. The controller has a built-in data processing unit, which calculates the initial coordinates of the substrate based on a photograph taken by the second vision detection component showing the substrate to be bonded located on the substrate positioning platform. ), and calculate the initial coordinates of the chip based on the photograph of the chip to be patched captured by the first vision detection component. Based on the acquired heating stage temperature, the X-axis thermal offset displacement and Y-axis thermal offset displacement are calculated. Based on the initial coordinates of the substrate and the chip, the X-axis thermal offset displacement and Y-axis thermal offset displacement are calculated to determine the required X-axis and Y-axis moving distances for the substrate positioning platform to move directly below the chip to be mounted. The controller sends an execution command to the first moving mechanism based on the calculation results of the data processing unit.

2. The intelligent control system for a high-precision eutectic bonding equipment as described in claim 1, characterized in that: The data processing unit calculates the thermal offset displacement based on a third-order polynomial thermal deformation model.

3. The intelligent control system for a high-precision eutectic bonding equipment as described in claim 2, characterized in that: The X-axis thermal offset displacement The Y-axis thermal offset displacement ,in Let X be the first-order thermal expansion coefficient. The coefficient of second-order thermal expansion in the X direction is... The third-order thermal expansion coefficient in the X direction is... The first-order thermal expansion coefficient in the Y direction is... The coefficient of second-order thermal expansion in the Y direction is... Let T be the third-order thermal expansion coefficient in the Y direction, and T be the real-time temperature detected by the heating platform. This is the reference temperature for the heating platform.

4. The intelligent control system for a high-precision eutectic bonding equipment as described in claim 3, characterized in that, The X-direction movement distance The distance of movement in the Y direction .

5. The intelligent control system for a high-precision eutectic bonding equipment as described in claim 2, characterized in that: The data processing unit calculates the initial coordinates of the substrate or the chip based on the captured photos. This includes preprocessing the photos to extract feature Mark points and outputting pixel coordinates, and then using a two-dimensional static affine coordinate transformation model to obtain the initial coordinates of the substrate or the chip based on the pixel coordinates.

6. The intelligent control system for a high-precision eutectic bonding equipment as described in claim 1, characterized in that: A piezoelectric fine-tuning module for adjusting the X-axis and Y-axis positions of the first suction cup is provided between the first vertical gripper and the first suction cup.

7. The intelligent control system for a high-precision eutectic bonding equipment as described in claim 6, characterized in that: It also includes a positioning mechanism for positioning the patch assembly. After the first moving mechanism executes the control command issued by the controller, the controller controls the positioning mechanism to position the patch assembly. At the same time, the controller controls the first vision inspection component to take a picture of the substrate to be patched. The data processing unit obtains the picture of the substrate to be patched located on the substrate positioning platform taken by the first vision inspection component and calculates the final coordinates of the substrate. The controller calculates the X-axis and Y-axis fine-tuning distances of the first suction cup and sends an execution command to the piezoelectric fine-tuning module based on the calculation results of the data processing unit.

8. The intelligent control system for a high-precision eutectic bonding equipment as described in claim 6, characterized in that: The piezoelectric fine-tuning module includes an X-axis piezoelectric ceramic drive unit and a Y-axis piezoelectric ceramic drive unit.