Metallization method for semiconductor wafers

Abstract

This invention relates to a metallization method for a semiconductor wafer, comprising at least the following steps: providing a semiconductor wafer having an upper side, a lower side, and including a plurality of solar cell stacks, wherein each solar cell stack has a Ge-substrate, a Ge-subcell, and at least two III-V-subcells arranged in the aforementioned order to construct the lower side of the semiconductor wafer, and having at least one through-opening extending from the upper side of the semiconductor wafer to the lower side, the through-opening having continuous sidewalls and an oval periphery in cross-section; applying a photoresist layer as a patterned area on the upper side or the lower side of the semiconductor wafer, or on both the upper and lower sides, by means of a printing method; applying a metal layer as an exposed area on the surface of the semiconductor wafer coated with the photoresist layer and on the photoresist layer; and peeling the photoresist pattern and the portion of the metal layer located on the photoresist pattern from the semiconductor wafer.

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