Semiconductor device and method of manufacturing the same

Abstract

This invention provides a semiconductor device and a method for manufacturing the same. The semiconductor device includes: a substrate, the substrate comprising a sub-base, an epitaxial layer, and an ion-doped region located between the substrate and the epitaxial layer, wherein the doping concentration of the substrate is greater than the doping concentration of the epitaxial layer, and the ion-doped region comprises carbon ions; and a photosensitive region located on the side of the epitaxial layer away from the substrate. The technical solution of this invention enables improvements in the dark count rate and afterpulse of the semiconductor device.

Description

Technical Field

[0001] This invention relates to the field of semiconductor integrated circuit manufacturing, and in particular to a semiconductor device and its manufacturing method. Background Technology

[0002] Compared to lightly doped epitaxial layers, heavily doped substrates have a higher content of metal impurity ions. Under high temperature conditions, metal impurity ions in the substrate will diffuse into the epitaxial layer, resulting in a deterioration in the dark count rate and after-pulse of the device. Summary of the Invention

[0003] The purpose of this invention is to provide a semiconductor device and a method for manufacturing the same, which enables improvements in the dark count rate and after-pulse of the semiconductor device.

[0004] To achieve the above objectives, the present invention provides a semiconductor device comprising:

[0005] The substrate includes a substrate, an epitaxial layer, and an ion-doped region located between the substrate and the epitaxial layer, wherein the doping concentration of the substrate is greater than the doping concentration of the epitaxial layer, and the ion-doped region includes carbon ions;

[0006] A photosensitive area, which is located on the side of the epitaxial layer away from the substrate.

[0007] Optionally, the ion-doped region extends from the side of the substrate near the epitaxial layer into the substrate.

[0008] Optionally, the photosensitive area includes a first doped layer and a second doped layer with opposite doping types, wherein the first doped layer extends from the surface of the epitaxial layer into the epitaxial layer; the second doped layer extends from the side of the first doped layer near the substrate toward the substrate, or the second doped layer surrounds the first doped layer.

[0009] Optionally, the substrate and the second doped layer are P-type doped, the epitaxial layer is P-type or N-type doped, and the first doped layer is N-type doped.

[0010] Optionally, the semiconductor device further includes:

[0011] A third doped layer extends from the side of the first doped layer away from the substrate into the first doped layer. The third doped layer has the same doping type as the first doped layer, and the doping concentration of the third doped layer is greater than that of the first doped layer.

[0012] Optionally, the semiconductor device further includes:

[0013] The first electrode is located on the side of the epitaxial layer away from the substrate;

[0014] The second electrode is located on the side of the substrate away from the epitaxial layer.

[0015] The present invention also provides a method for manufacturing a semiconductor device, comprising:

[0016] A substrate is provided, the substrate comprising a substrate, an epitaxial layer, and an ion-doped region located between the substrate and the epitaxial layer, wherein the doping concentration of the substrate is greater than the doping concentration of the epitaxial layer, and the ion-doped region comprises carbon ions;

[0017] A photosensitive area is formed, which is located on the side of the epitaxial layer away from the substrate.

[0018] Optionally, forming the substrate includes:

[0019] Provide the substrate;

[0020] A doped layer is formed on the substrate as the ion-doped region, or ions are implanted into the substrate to form the ion-doped region;

[0021] The epitaxial layer is formed on the ion-doped region.

[0022] Optionally, the photosensitive area includes a first doped layer and a second doped layer with opposite doping types, wherein the first doped layer extends from the surface of the epitaxial layer into the epitaxial layer; the second doped layer extends from the side of the first doped layer near the substrate toward the substrate, or the second doped layer surrounds the first doped layer.

[0023] Optionally, the substrate and the second doped layer are P-type doped, the epitaxial layer is P-type or N-type doped, and the first doped layer is N-type doped.

[0024] Optionally, the method for manufacturing the semiconductor device further includes:

[0025] A third doped layer is formed, which extends from the side of the first doped layer away from the substrate into the first doped layer. The third doped layer has the same doping type as the first doped layer, and the doping concentration of the third doped layer is greater than that of the first doped layer.

[0026] Optionally, the method for manufacturing the semiconductor device further includes:

[0027] A first electrode is formed, wherein the first electrode is located on the side of the epitaxial layer away from the substrate;

[0028] A second electrode is formed, which is located on the side of the substrate away from the epitaxial layer.

[0029] Compared with the prior art, the technical solution of the present invention has the following beneficial effects:

[0030] 1. The semiconductor device of the present invention includes: a substrate comprising a base, an epitaxial layer, and an ion-doped region located between the base and the epitaxial layer, wherein the doping concentration of the base is greater than the doping concentration of the epitaxial layer, and the ion-doped region comprises carbon ions; and a photosensitive region located on the side of the epitaxial layer away from the base. This enables improvements in the dark count rate and afterpulse of the semiconductor device.

[0031] 2. The method for manufacturing a semiconductor device according to the present invention includes: providing a substrate, the substrate including a substrate, an epitaxial layer, and an ion-doped region located between the substrate and the epitaxial layer, wherein the doping concentration of the substrate is greater than the doping concentration of the epitaxial layer, and the ion-doped region includes carbon ions; forming a photosensitive region located on the side of the epitaxial layer away from the substrate. This enables improvements in the dark count rate and afterpulse of the semiconductor device. Attached Figure Description

[0032] Figure 1 This is a schematic diagram of the structure of a semiconductor device according to an embodiment of the present invention;

[0033] Figure 2 This is a schematic diagram of the structure of a semiconductor device according to another embodiment of the present invention;

[0034] Figure 3 This is a flowchart of a method for manufacturing a semiconductor device according to an embodiment of the present invention;

[0035] Figures 4a-4d yes Figure 3 A schematic diagram of a method for manufacturing a semiconductor device as shown in the figure;

[0036] Figures 5a-5e yes Figure 3 A schematic diagram of another embodiment of the semiconductor device manufacturing method shown.

[0037] Among them, the appendix Figures 1-5e The annotations in the attached figures are explained as follows:

[0038] 11-Substrate; 12-Epipolar layer; 13-Ion-doped region; 141-First doped layer; 142-Second doped layer; 15-First electrode; 16-Second electrode; 17-Deep trench isolation structure; 18-Patterned mask layer. Detailed Implementation

[0039] To make the objectives, advantages, and features of the present invention clearer, the semiconductor device and its manufacturing method proposed in this invention will be further described in detail below with reference to the accompanying drawings. It should be noted that the drawings are all in a very simplified form and use non-precise proportions, and are only used to facilitate and clarify the illustration of the embodiments of the present invention.

[0040] An embodiment of the present invention provides a semiconductor device, comprising: a substrate, the substrate including a substrate, an epitaxial layer and an ion-doped region located between the substrate and the epitaxial layer, wherein the doping concentration of the substrate is greater than the doping concentration of the epitaxial layer, and the ion-doped region includes carbon ions; and a photosensitive region located on the side of the epitaxial layer away from the substrate.

[0041] See below. Figures 1-2 The manufacturing method of the semiconductor device provided in this embodiment will be described in more detail. Figures 1-2 This is a schematic diagram of a longitudinal cross-section.

[0042] The substrate includes a substrate 11, an epitaxial layer 12, and an ion-doped region 13 located between the substrate 11 and the epitaxial layer 12. The doping concentration of the substrate 11 is greater than the doping concentration of the epitaxial layer 12, and the ion-doped region 13 includes carbon ions.

[0043] The substrate material can be a semiconductor material such as Si, SiGe, SiGeC, or SiC, or it can include a layered substrate such as Si / SiGe, Si / SiC, silicon-on-insulator (SOI), or silicon-germanium-on-insulator. It can also include other materials besides semiconductor materials, which are not limited in this application.

[0044] The substrate 11 is heavily doped, and the ion doping concentration of the epitaxial layer 12 is very low. The epitaxial layer 12 can be an intrinsically doped layer, which can serve as a neutral region. As an example, the epitaxial layer 12 can be unintentionally doped, i.e., it has P-type or N-type doping caused only by accidental contamination of impurities during its manufacturing.

[0045] The doping types of the substrate 11 and the epitaxial layer 12 can be the same or opposite. In one embodiment, the substrate 11 is p-type doped, and the epitaxial layer 12 can be n-type or p-type doped.

[0046] During the doping process of the substrate 11, metal impurity ions are introduced into the substrate 11. The sources of metal impurity ions may include: (1) during the ion implantation process of the substrate 11, metal material on the surface of the component in the chamber is sputtered down into the substrate 11; (2) the environment in the chamber contains metal contaminants that remain from the previous process; (3) the raw materials used for doping contain metal impurities.

[0047] Metal impurity ions may include at least one of Fe, Ni, Cu and Cr ions.

[0048] In one embodiment, the ion-doped region 13 extends from the side of the substrate 11 near the epitaxial layer 12 into the substrate 11.

[0049] like Figure 1 As shown, the ion-doped region 13 can extend into the entire substrate 11; or, the ion-doped region 13 can extend into a portion of the thickness of the substrate 11.

[0050] In one embodiment, the concentration of carbon ions in the ion-doped region 13 can be 10. 14 cm -3 ~10 16 cm -3 .

[0051] Because the carbon ions can form complexes with the metal impurity ions in the substrate 11, and these complexes are large, they are difficult to move, thus making it difficult for the metal impurity ions in the substrate 11 to diffuse into the epitaxial layer 12. Therefore, under high temperature conditions, the carbon ions in the ion-doped region 13 can effectively prevent the metal impurity ions in the substrate 11 from diffusing into the epitaxial layer 12.

[0052] The photosensitive area is located on the side of the epitaxial layer 12 away from the substrate 11.

[0053] The photosensitive area is used to form a photodiode, which can be an avalanche photodiode or a single-photon avalanche photodiode, etc.

[0054] The photosensitive area includes a first doped layer 141 and a second doped layer 142 with opposite doping types. The first doped layer 141 extends from the surface of the epitaxial layer 12 into the epitaxial layer 12; the second doped layer 142 extends from the side of the first doped layer 141 near the substrate 11 toward the substrate 11 (e.g., ...). Figure 1 and Figure 2 (as shown), or, the second doped layer 142 surrounds the first doped layer 141.

[0055] When the second doped layer 142 extends from the side of the first doped layer 141 near the substrate 11 toward the substrate 11, the width of the second doped layer 142 in the direction parallel to the surface of the epitaxial layer 12 may be less than, equal to or greater than the width of the first doped layer 141 in the direction parallel to the surface of the epitaxial layer 12.

[0056] In one embodiment, the semiconductor device further includes a third doped layer (not shown) extending from the side of the first doped layer 141 away from the substrate 11 into the first doped layer 141, wherein the third doped layer has the same doping type as the first doped layer 141 and the doping concentration of the third doped layer is greater than that of the first doped layer 141.

[0057] In one embodiment, the first doped layer 141 and the third doped layer are N-type doped, and the second doped layer 142 is P-type doped.

[0058] The semiconductor device further includes:

[0059] The first electrode 15 is located on the side of the epitaxial layer 12 away from the substrate 11;

[0060] The second electrode 16 is located on the side of the substrate 11 away from the epitaxial layer 12.

[0061] A reverse bias voltage is applied to the photodiode through the first electrode 15 and the second electrode 16.

[0062] In one embodiment, the first electrode 15 is connected to the positive terminal of the power supply, and the second electrode 16 is connected to the negative terminal of the power supply.

[0063] In one embodiment, the first electrode 15 is located on the third doped layer, which is used to connect the first doped layer 141, thereby reducing the contact resistance when a voltage is applied to the first doped layer 141 through the first electrode 15; since the substrate 11 is heavily doped, the contact resistance between the substrate 11 and the second electrode 16 can be reduced.

[0064] The semiconductor device further includes:

[0065] An interlayer dielectric layer (not shown) is formed on the side of the epitaxial layer 12 away from the substrate 11, and the first electrode 15 is formed on the interlayer dielectric layer;

[0066] A metal interconnect structure (not shown) is formed in the interlayer dielectric layer, and the first electrode 15 is electrically connected to the third doped layer through the metal interconnect structure.

[0067] In one embodiment, the interlayer dielectric layer may include multiple stacked insulating layers, and the metal interconnect structure may include at least one conductive plug and at least one metal line electrically connected. The bottom metal line is electrically connected to the third doped layer through the bottom conductive plug, and adjacent metal lines are electrically connected through the conductive plug.

[0068] In one embodiment, the semiconductor device further includes a carrier sheet (not shown), wherein the side of the interlayer dielectric layer away from the substrate 11 is bonded to the carrier sheet. The side of the interlayer dielectric layer away from the substrate 11 may be bonded to the carrier sheet via a bonding layer.

[0069] In one embodiment, the carrier sheet may be made of semiconductor materials such as silicon or germanium, or glass.

[0070] When the semiconductor device includes the carrier sheet, a via conductive structure (not shown) can be formed in the substrate. The via conductive structure penetrates the substrate and is insulated from the substrate. The via conductive structure is electrically connected to the metal interconnect structure, so that the first electrode 15 can be led out to the side of the substrate 11 away from the epitaxial layer 12 through the via conductive structure and the metal interconnect structure.

[0071] If the photodiode is an avalanche photodiode or a single-photon avalanche photodiode, in the working state, a reverse bias voltage is applied to the photodiode through the first electrode 15 and the second electrode 16, so that the working voltage is higher than the breakdown voltage of the PN junction formed between the first doped layer 141 and the second doped layer 142, forming a voltage difference; under this voltage difference, a depletion layer is generated at the PN junction, and a strong electric field exists in the depletion layer. This electric field can ensure that the charge carriers in this region can obtain enough energy to generate an avalanche through the collisional ionization effect, thereby generating a large avalanche current.

[0072] The semiconductor device further includes a deep trench isolation structure 17 extending from the side of the epitaxial layer 12 away from the substrate 11 to the side of the substrate 11 away from the epitaxial layer 12, the deep trench isolation structure 17 being formed around the photosensitive area. Preferably, the deep trench isolation structure 17 surrounds the photosensitive area.

[0073] The deep trench isolation structure 17 is used to achieve isolation between adjacent photodiodes and avoid crosstalk.

[0074] The deep trench isolation structure 17 is formed in a trench (not shown) in the substrate. The deep trench isolation structure 17 includes an insulating material layer (not shown) covering the inner wall of the trench and a conductive layer (not shown) filling the trench.

[0075] As can be seen from the above, the semiconductor device provided by the present invention includes an ion-doped region located between the substrate and the epitaxial layer, the ion-doped region containing carbon ions, which effectively blocks the diffusion of metal impurity ions in the substrate into the epitaxial layer, thereby improving the dark count rate and after-pulse of the semiconductor device.

[0076] During the back-side processing of the substrate (e.g., etching processes for forming the via conductive structure and the deep trench isolation structure), charges are generated on the back side of the substrate (i.e., the side of the substrate away from the epitaxial layer). If these charges enter the photosensitive area in the epitaxial layer, they will affect the dark count rate. In this invention, carbon ions in the ion-doped region can effectively block the diffusion of metal impurity ions from the substrate into the epitaxial layer, allowing the heavily doped substrate to remain in the substrate. This effectively isolates the charge from entering the epitaxial layer, thereby reducing the dark count rate of the semiconductor device.

[0077] Furthermore, since the substrate retains the heavily doped substrate, the first electrode can be formed on the photosensitive area, and the second electrode can be formed on the side of the substrate away from the epitaxial layer. That is, the first electrode and the second electrode are formed on different sides of the substrate, which allows the distance between the first electrode and the second electrode to be made larger, thereby helping to reduce the dark count rate of the semiconductor device and also helping to reduce the size of the semiconductor device.

[0078] One embodiment of the present invention provides a method for manufacturing a semiconductor device, see reference. Figure 3 , Figure 3 This is a flowchart of a method for manufacturing a semiconductor device according to an embodiment of the present invention, the method comprising:

[0079] Step S1: Provide a substrate, the substrate including a substrate, an epitaxial layer and an ion-doped region located between the substrate and the epitaxial layer, the doping concentration of the substrate being greater than the doping concentration of the epitaxial layer, and the ion-doped region including carbon ions;

[0080] Step S2: Form a photosensitive area, which is located on the side of the epitaxial layer away from the substrate.

[0081] See below. Figures 4a-4d , Figures 5a-5e The manufacturing method of the semiconductor device provided in this embodiment will be described in more detail. Figures 4a-4d , Figures 5a-5e This is a longitudinal cross-sectional view. It should be noted that for structures with the same names in the semiconductor device manufacturing method as those in the semiconductor device itself, please refer to the description of the semiconductor device above.

[0082] According to step S1, a substrate is provided, the substrate including a substrate 11, an epitaxial layer 12 and an ion-doped region 13 located between the substrate 11 and the epitaxial layer 12, the doping concentration of the substrate 11 is greater than the doping concentration of the epitaxial layer 12, and the ion-doped region 13 includes carbon ions.

[0083] The substrate 11 is heavily doped, and the ion doping concentration of the epitaxial layer 12 is very low. The epitaxial layer 12 can be an intrinsically doped layer, which can serve as a neutral region. As an example, the epitaxial layer 12 can be unintentionally doped, i.e., it has P-type or N-type doping caused only by accidental contamination of impurities during its manufacturing.

[0084] The doping types of the substrate 11 and the epitaxial layer 12 can be the same or opposite. In one embodiment, the substrate 11 is p-type doped, and the epitaxial layer 12 can be n-type or p-type doped.

[0085] During the doping process of the substrate 11, metal impurity ions are introduced into the substrate 11.

[0086] Because the carbon ions in the ion-doped region 13 can form complexes with the metal impurity ions in the substrate 11, and these complexes are large, they are difficult to move, thus making it difficult for the metal impurity ions in the substrate 11 to diffuse into the epitaxial layer 12. Therefore, under subsequent high-temperature conditions such as annealing, the carbon ions in the ion-doped region 13 can effectively prevent the metal impurity ions in the substrate 11 from diffusing into the epitaxial layer 12.

[0087] In one embodiment, forming the substrate includes: Figure 5a As shown, the substrate 11 is provided; as Figure 5b As shown, a doped layer is formed on the substrate 11 as the ion-doped region 13, or, as... Figure 5b As shown, ion implantation is performed into the substrate 11 to form the ion-doped region 13; as Figure 5c As shown, the epitaxial layer 12 is formed on the ion-doped region 13.

[0088] Alternatively, in another embodiment, such as Figure 4a and Figure 4b As shown, after forming the epitaxial layer 12 on the substrate 11, ion implantation can be performed on the substrate 11 to form the ion-doped region 13. Since the carbon ions need to penetrate the epitaxial layer 12 to enter the substrate 11, a high-energy ion implantation process can be used to implant the carbon ions into the substrate 11.

[0089] When ion implantation is performed into the substrate 11 to form the ion-doped region 13, the ion-doped region 13 can be formed throughout the entire substrate 11 (e.g., Figure 4b (as shown) or a portion of the thickness of the substrate 11 (such as) Figure 5b As shown in the figure.

[0090] In one embodiment, maskless ion implantation can be used when ion implanting into the substrate 11.

[0091] According to step S2, a photosensitive area is formed, which is located on the side of the epitaxial layer 12 away from the substrate 11. The photosensitive area is used to form a photodiode.

[0092] The photodiode can be an avalanche photodiode or a single-photon avalanche photodiode, etc.

[0093] The photosensitive area includes a first doped layer 141 and a second doped layer 142 with opposite doping types. The first doped layer 141 extends from the surface of the epitaxial layer 12 into the epitaxial layer 12; the second doped layer 142 extends from the side of the first doped layer 141 near the substrate 11 toward the substrate 11 (e.g., ...). Figure 4c and Figure 5d (as shown), or, the second doped layer 142 surrounds the first doped layer 141.

[0094] In one embodiment, the method for manufacturing the semiconductor device further includes:

[0095] A third doped layer (not shown) is formed, which extends from the side of the first doped layer 141 away from the substrate 11 into the first doped layer 141. The third doped layer has the same doping type as the first doped layer 141, and the doping concentration of the third doped layer is greater than that of the first doped layer 141.

[0096] In one embodiment, the first doped layer 141 and the third doped layer are N-type doped, and the second doped layer 142 is P-type doped.

[0097] The first doped layer 141, the second doped layer 142, and the third doped layer are all formed by performing an ion implantation process followed by an annealing process. A mask can be used during the ion implantation process.

[0098] Taking the formation of the first doped layer 141 by ion implantation as an example, such as Figure 4c and Figure 5dAs shown, a patterned mask layer 18 is formed on the side of the epitaxial layer 12 away from the substrate 11, and ion implantation is performed into the epitaxial layer 12 using the patterned mask layer 18 as a mask; then, the patterned mask layer 18 is removed.

[0099] In one embodiment, the patterned mask layer 18 is a photoresist.

[0100] like Figure 4d and Figure 5e As shown, the method for manufacturing the semiconductor device further includes:

[0101] A first electrode 15 is formed, and the first electrode 15 is located on the side of the epitaxial layer 12 away from the substrate 11;

[0102] A second electrode 16 is formed, which is located on the side of the substrate 11 away from the epitaxial layer 12.

[0103] A reverse bias voltage is applied to the photodiode through the first electrode 15 and the second electrode 16.

[0104] In one embodiment, the first electrode 15 is located on the third doped layer, which is used to expose the first doped layer 141, such that when a voltage is applied to the first doped layer 141 through the first electrode 15, the contact resistance is reduced; since the substrate 11 is heavily doped, the contact resistance between the substrate 11 and the second electrode 16 can be reduced.

[0105] The method for manufacturing the semiconductor device further includes:

[0106] An interlayer dielectric layer (not shown) is formed on the side of the epitaxial layer 12 away from the substrate 11, and the first electrode 15 is formed on the interlayer dielectric layer;

[0107] A metal interconnect structure (not shown) is formed in the interlayer dielectric layer, and the first electrode 15 is electrically connected to the third doped layer through the metal interconnect structure.

[0108] In one embodiment, the method for manufacturing the semiconductor device further includes bonding the side of the interlayer dielectric layer away from the substrate 11 to a carrier sheet (not shown). The side of the interlayer dielectric layer away from the substrate 11 can be bonded to the carrier sheet via a bonding layer.

[0109] When the semiconductor device includes the carrier sheet, the method of manufacturing the semiconductor device further includes: forming a through-hole conductive structure (not shown) in the substrate, the through-hole conductive structure penetrating the substrate and being insulated from the substrate, the through-hole conductive structure being electrically connected to the metal interconnect structure, such that the first electrode 15 can be led out to the side of the substrate 11 away from the epitaxial layer 12 through the through-hole conductive structure and the metal interconnect structure.

[0110] The method for manufacturing the semiconductor device further includes: forming a deep trench isolation structure 17 extending from one side of the epitaxial layer 12 away from the substrate 11 to one side of the substrate 11 away from the epitaxial layer 12, the deep trench isolation structure 17 being formed around the photosensitive area. Preferably, the deep trench isolation structure 17 surrounds the photosensitive area.

[0111] The deep trench isolation structure 17 is used to achieve isolation between adjacent photodiodes and avoid crosstalk.

[0112] The deep trench isolation structure 17 is formed in a trench (not shown) in the substrate. The deep trench isolation structure 17 includes an insulating material layer (not shown) covering the inner wall of the trench and a conductive layer (not shown) filling the trench.

[0113] As can be seen from the above, the semiconductor device manufacturing method provided by the present invention, by forming the ion-doped region located between the substrate and the epitaxial layer, the ion-doped region containing carbon ions, can effectively block the diffusion of metal impurity ions in the substrate into the epitaxial layer, thereby improving the dark count rate and after-pulse of the semiconductor device.

[0114] During the back-side processing of the substrate (e.g., etching processes for forming the via conductive structure and the deep trench isolation structure), charges are generated on the back side of the substrate (i.e., the side of the substrate away from the epitaxial layer). If these charges enter the photosensitive area in the epitaxial layer, they will affect the dark count rate. In this invention, carbon ions in the ion-doped region can effectively block the diffusion of metal impurity ions from the substrate into the epitaxial layer, allowing the heavily doped substrate to remain in the substrate. This effectively isolates the charge from entering the epitaxial layer, thereby reducing the dark count rate of the semiconductor device.

[0115] Furthermore, since the substrate retains the heavily doped substrate, the first electrode can be formed on the photosensitive area, and the second electrode can be formed on the side of the substrate away from the epitaxial layer. That is, the first electrode and the second electrode are formed on different sides of the substrate, which allows the distance between the first electrode and the second electrode to be made larger, thereby helping to reduce the dark count rate of the semiconductor device and also helping to reduce the size of the semiconductor device.

[0116] The above description is merely a description of preferred embodiments of the present invention and is not intended to limit the scope of the present invention in any way. Any changes or modifications made by those skilled in the art based on the above disclosure shall fall within the protection scope of the claims.

Claims

1. A semiconductor device, characterized in that, include: The substrate includes a substrate, an epitaxial layer, and an ion-doped region located between the substrate and the epitaxial layer, wherein the doping concentration of the substrate is greater than the doping concentration of the epitaxial layer, and the ion-doped region includes carbon ions; A photosensitive area, which is located on the side of the epitaxial layer away from the substrate.

2. The semiconductor device as claimed in claim 1, characterized in that, The ion-doped region extends from the side of the substrate closest to the epitaxial layer into the substrate.

3. The semiconductor device as described in claim 1, characterized in that, The photosensitive area includes a first doped layer and a second doped layer with opposite doping types. The first doped layer extends from the surface of the epitaxial layer into the epitaxial layer. The second doped layer extends from the side of the first doped layer near the substrate toward the substrate, or the second doped layer surrounds the first doped layer.

4. The semiconductor device as described in claim 3, characterized in that, The substrate and the second doped layer are P-type doped, the epitaxial layer is P-type or N-type doped, and the first doped layer is N-type doped.

5. The semiconductor device as described in claim 3, characterized in that, The semiconductor device further includes: A third doped layer extends from the side of the first doped layer away from the substrate into the first doped layer. The third doped layer has the same doping type as the first doped layer, and the doping concentration of the third doped layer is greater than that of the first doped layer.

6. The semiconductor device as claimed in claim 1, characterized in that, The semiconductor device further includes: The first electrode is located on the side of the epitaxial layer away from the substrate; The second electrode is located on the side of the substrate away from the epitaxial layer.

7. A method for manufacturing a semiconductor device, characterized in that, include: A substrate is provided, the substrate comprising a substrate, an epitaxial layer, and an ion-doped region located between the substrate and the epitaxial layer, wherein the doping concentration of the substrate is greater than the doping concentration of the epitaxial layer, and the ion-doped region comprises carbon ions; A photosensitive area is formed, which is located on the side of the epitaxial layer away from the substrate.

8. The method for manufacturing a semiconductor device as described in claim 7, characterized in that, Forming the substrate includes: Provide the substrate; A doped layer is formed on the substrate as the ion-doped region, or ions are implanted into the substrate to form the ion-doped region; The epitaxial layer is formed on the ion-doped region.

9. The method for manufacturing a semiconductor device as described in claim 7, characterized in that, The photosensitive area includes a first doped layer and a second doped layer with opposite doping types. The first doped layer extends from the surface of the epitaxial layer into the epitaxial layer. The second doped layer extends from the side of the first doped layer near the substrate toward the substrate, or the second doped layer surrounds the first doped layer.

10. The method for manufacturing a semiconductor device as described in claim 9, characterized in that, The substrate and the second doped layer are P-type doped, the epitaxial layer is P-type or N-type doped, and the first doped layer is N-type doped.

11. The method for manufacturing a semiconductor device as described in claim 9, characterized in that, The method for manufacturing the semiconductor device further includes: A third doped layer is formed, which extends from the side of the first doped layer away from the substrate into the first doped layer. The third doped layer has the same doping type as the first doped layer, and the doping concentration of the third doped layer is greater than that of the first doped layer.

12. The method for manufacturing a semiconductor device as described in claim 7, characterized in that, The method for manufacturing the semiconductor device further includes: A first electrode is formed, wherein the first electrode is located on the side of the epitaxial layer away from the substrate; A second electrode is formed, which is located on the side of the substrate away from the epitaxial layer.

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