Flip-chip light emitting diode and method of manufacturing the same

Abstract

This invention provides a flip-chip light-emitting diode and a method for manufacturing the same. The method includes the following steps: providing a first substrate; performing an epitaxial process to form a semiconductor structure on the first substrate, wherein the semiconductor structure includes a current-transmitting layer forming a junction side and defining a first electrode projection region and a second electrode projection region; performing an etching process to form at least one groove on the junction side; performing a filling process to fill the at least one groove with a transparent material to change the current-transmitting path on the junction side; performing a bonding process to bond a second substrate to the junction side; and removing the first substrate and forming a first electrode and a second electrode on the side of the semiconductor structure adjacent to the first substrate. The position of the first electrode corresponds to the first electrode projection region, and the position of the second electrode corresponds to the second electrode projection region.

Description

Technical Field

[0001] This invention relates to a flip-chip light-emitting diode and its manufacturing method, particularly a flip-chip light-emitting diode and its manufacturing method that improves current density and increases light-emitting area. Background Technology

[0002] like Figure 1 As shown, the existing flip-chip LED 200 mainly places the P metal electrode 210 and the N metal electrode 220 below the semiconductor light-emitting structure 230 and the current transport layer 240 (i.e., facing downwards in the plan view), and covers the bonding side 240a above the current transport layer 240 with a transparent substrate 250. After the P metal electrode 210 and the N metal electrode 220 become conductive, the current can flow through the current transport layer 240 and drive the semiconductor light-emitting structure 230 to emit light. Finally, the light passes through the transparent substrate 250 to achieve the effect of emitting light.

[0003] Figure 2 From Figure 1 The top view of the plan view, looking towards the bonding side 240a of the transparent substrate 250 and the current transport layer 240, wherein the dashed rectangle on the left corresponds to Figure 1 The projection position 241 of the P-metal electrode 210 set in the middle, and the right dashed rectangle corresponds to Figure 1 The projection position 242 of the N metal electrode 220 set therein. For example... Figure 1 and Figure 2 As shown, when the P-metal electrode 210 and the N-metal electrode 220 are conductive, the current transmission path is almost entirely linear between the projected position 241 of the P-metal electrode 210 and the projected position 242 of the N-metal electrode 220, thus exhibiting the following characteristics: Figure 2 The elongated surface light source shown is divergent. Even if the overall shape of the light-emitting surface is changed or the area of ​​the light-emitting surface is increased, the current will still travel along the shortest path, resulting in the same elongated surface light source, which means that the luminous efficiency cannot be improved. Furthermore, since the current is concentrated in a straight line between the projection position 241 of the P metal electrode 210 and the projection position 242 of the N metal electrode 220, the current density will be too high, causing problems such as easy overheating, poor electrostatic discharge, or excessive leakage.

[0004] Therefore, how to design a flip-chip light-emitting diode that can improve the above problems and its manufacturing method is a topic worthy of research. Summary of the Invention

[0005] The purpose of this invention is to provide a method for manufacturing a flip-chip light-emitting diode that improves current density and increases the light-emitting area.

[0006] To achieve the above objectives, the method for manufacturing a flip-chip light-emitting diode of the present invention includes the following steps: providing a first substrate; performing an epitaxial process to form a semiconductor structure on the first substrate, the semiconductor structure sequentially including a first semiconductor epitaxial layer, a light-emitting layer, a second semiconductor epitaxial layer, and a current transport layer at a position adjacent to the first substrate, wherein the current transport layer forms a bonding side and defines a first electrode projection region and a second electrode projection region; performing an etching process to form at least one groove on the bonding side, wherein each groove extends from a side adjacent to the first electrode projection region to a side adjacent to the second electrode projection region; performing a filling process to fill a transparent material into the at least one groove to change the current transport path on the bonding side; performing a bonding process to cover and bond a second substrate to the bonding side; and removing the first substrate and forming a first electrode and a second electrode on a side of the semiconductor structure adjacent to the first substrate, wherein the position of the first electrode corresponds to the first electrode projection region and the first electrode is electrically connected to the first semiconductor epitaxial layer, and the position of the second electrode corresponds to the second electrode projection region and the second electrode is electrically connected to the current transport layer.

[0007] In an embodiment of the present invention, at least one groove is located at a position other than the shortest connecting path between the first electrode projection area and the second electrode projection area.

[0008] In an embodiment of the present invention, the impedance value of the transparent material is lower than that of the current transport layer.

[0009] In an embodiment of the present invention, the impedance value of the current transport layer is 10 to 10^10 of the impedance value of the transparent material. 3 times.

[0010] In embodiments of the present invention, the transparent material is selected from one of the following groups of materials: silicon oxide, silicon nitride, and magnesium fluoride.

[0011] In an embodiment of the present invention, at least one of the grooves is located on the shortest path connecting the first electrode projection area and the second electrode projection area.

[0012] In an embodiment of the present invention, the impedance value of the transparent material is higher than that of the current transport layer.

[0013] In embodiments of the present invention, the impedance value of the transparent material is 10 to 10 times the impedance value of the current transport layer. 3 times.

[0014] In embodiments of the present invention, the transparent material is selected from one of the following groups of materials: indium zinc oxide, aluminum zinc oxide, and indium tin oxide.

[0015] In embodiments of the present invention, each groove is a straight groove, a rectangular groove, a circular groove, an elliptical groove, a curved groove, a grid-like groove, a tree-like groove, or a radial groove.

[0016] The present invention also includes a flip-chip light-emitting diode manufactured using the above-described flip-chip light-emitting diode manufacturing method.

[0017] With this design, the method for manufacturing flip-chip light-emitting diodes of the present invention forms at least one groove on the bonding side of the current transport layer by performing etching and filling processes, and fills these grooves with transparent material. This alters the current transport path of the current transport layer on the bonding side, preventing excessive current density concentration and thereby increasing the luminous area and brightness of the manufactured flip-chip light-emitting diode. Furthermore, the flip-chip light-emitting diode manufactured using the method of the present invention exhibits improved heat dissipation and anti-static capabilities. Attached Figure Description

[0018] Figure 1 This is a schematic diagram of the structure of a flip-chip light-emitting diode in the prior art; Figure 2 In order to be in Figure 1 A schematic diagram of a flip-chip light-emitting diode in the prior art, in an emitting state; Figure 3 This is a flowchart of the manufacturing method of the flip-chip light-emitting diode of the present invention; Figure 4 This is a schematic diagram of the corresponding structures produced by each step in the manufacturing method of the flip-chip light-emitting diode of the present invention; Figure 5 This is a schematic diagram of a first embodiment of the current transmission path formed on the bonding side of the current transmission layer according to the present invention. Figure 6 This is a schematic diagram of a second embodiment of the current transmission path formed on the bonding side of the current transmission layer according to the present invention; Figure 7 This is a schematic diagram of a third embodiment of the current transmission path formed on the bonding side of the current transmission layer according to the present invention; Figure 8 A schematic diagram of a flip-chip light-emitting diode manufactured using the flip-chip light-emitting diode manufacturing method of the present invention. Detailed Implementation

[0019] Since the various aspects and embodiments are merely illustrative and not limiting, other aspects and embodiments may arise for those skilled in the art after reading this specification without departing from the scope of the invention. The features and advantages of these embodiments will become more apparent from the following detailed description and the scope of this application.

[0020] In this document, the terms "a" or "an (species / worker)" are used to describe the elements and components described herein. This is done for ease of explanation only and to provide a general meaning regarding the scope of the invention. Therefore, unless it is obvious otherwise, this description should be understood to include one or at least one (species / worker), and the singular also includes multiples.

[0021] In this document, the terms "first" or "second" and similar ordinal numbers are primarily used to distinguish or refer to the same or similar elements or structures, and do not necessarily imply a spatial or temporal order of these elements or structures. It should be understood that, in certain situations or configurations, ordinal numbers can be used interchangeably without affecting the implementation of the invention.

[0022] In this document, the terms “comprising,” “having,” or any other similar terms are intended to cover non-exclusive inclusions. For example, an element or structure containing multiple elements is not limited to those listed herein, but may include other elements not expressly listed but which are generally inherent to the element or structure.

[0023] Reference Figures 3 to 5 ,in Figure 3 This is a flowchart of the flip-chip light-emitting diode manufacturing method of the present invention. Figure 4 This is a schematic diagram of the corresponding structures produced by each step in the flip-chip light-emitting diode manufacturing method of the present invention. Figure 5 This is a schematic diagram of a first embodiment of the current transmission path formed on the bonding side 24a of the current transmission layer 24 according to the present invention. Figures 3 to 5 As shown, the manufacturing method of the flip-chip light-emitting diode of the present invention includes the following steps: Step S1: Provide the first substrate 10.

[0024] First, the present invention provides a first substrate 10 as a temporary substrate for the flip-chip light-emitting diode 1 of the present invention, for supporting other components of the flip-chip light-emitting diode 1. The first substrate 10 is a planar structure. In the embodiments of the present invention, the first substrate 10 is a gallium arsenide (GaAs) substrate, but the first substrate 10 may also be made of other semiconductor materials or commonly used substrate materials, and the present invention is not limited thereto.

[0025] Step S2: Perform an epitaxial process to form a semiconductor structure 20 on the first substrate 10, wherein the semiconductor structure 20 includes a first semiconductor epitaxial layer 21, a light-emitting layer 22, a second semiconductor epitaxial layer 23 and a current transport layer 24 in sequence at a position adjacent to the first substrate 10, and the current transport layer 24 forms a bonding side 24a and defines a first electrode projection region A1 and a second electrode projection region A2.

[0026] Specifically, after providing the first substrate 10 in step S1, the present invention performs an epitaxial process on the first substrate 10 to form a semiconductor structure 20 on the first substrate 10. The semiconductor structure 20 begins at a location adjacent to the first substrate 10 by sequentially stacking a first semiconductor epitaxial layer 21, a second semiconductor epitaxial layer 23, and a current transport layer 24 through an epitaxial process. A light-emitting layer 22 is formed at the contact surface between the first semiconductor epitaxial layer 21 and the second semiconductor epitaxial layer 23, so that the semiconductor structure 20 primarily provides the effect of emitting light after conducting electricity. In an embodiment of the present invention, the first semiconductor epitaxial layer 21 is made of an N-type semiconductor material, such as N-type aluminum indium gallium phosphide (N-AlGaInP), the light-emitting layer 22 is a multiple-quantum-well (MQW) layer, the second semiconductor epitaxial layer 23 is made of a P-type semiconductor material, such as P-type aluminum indium gallium phosphide (P-AlGaInP), and the current transport layer 24 is made of P-type gallium phosphide (P-GaP) (e.g., doped with magnesium (Mg) element). However, the materials of each layer of the semiconductor structure 20 are not limited to the above-mentioned materials.

[0027] Since the current transport layer 24 is stacked on top of the semiconductor structure 20, it forms an exposed and large-area bonding side 24a. In subsequent manufacturing processes, a first electrode 40 and a second electrode 50 need to be formed on the surface of the semiconductor structure 20 adjacent to the first substrate 10. Therefore, the first electrode 40 extends along a straight line perpendicular to the surface of that side at the location where it will be formed, corresponding to the projection onto the bonding side 24a of the current transport layer 24, thus forming a first electrode projection area A1. Similarly, the second electrode 50 extends along a straight line perpendicular to the surface of that side at the location where it will be formed, corresponding to the projection onto the bonding side 24a of the current transport layer 24, thus forming a second electrode projection area A2. In embodiments of the present invention, the first electrode 40 and the second electrode 50 have rectangular cross-sections parallel to the bonding side 24a, such that the first electrode projection area A1 and the second electrode projection area A2 are rectangular regions; however, the present invention is not limited to this.

[0028] Step S3: Perform an etching process to form at least one groove 25 on the bonding side 24a.

[0029] Specifically, after forming the semiconductor structure 20 in step S2, the present invention performs an etching process on the bonding side 24a of the current transport layer 24. The etching process mainly forms at least one groove 25 on the bonding side 24a of the current transport layer 24. In the present invention, the current transport path of the current transport layer 24 can be planned before performing the etching process, and at least one groove 25 is formed at the corresponding position according to the planned current transport path. Each groove 25 extends from the side adjacent to the first electrode projection area A1 to the side adjacent to the second electrode projection area A2, and the depth of each groove 25 does not exceed the thickness of the current transport layer 24.

[0030] The number and location of at least one groove 25 vary depending on the design requirements of different current transmission paths. For example, at least one groove 25 may consist of only a single groove 25 or multiple grooves 25. In this invention, at least one groove 25 may be positioned outside the shortest connection path between the first electrode projection area A1 and the second electrode projection area A2 (e.g., on both sides of the aforementioned shortest connection path), or one of at least one groove 25 may be positioned on the shortest connection path between the first electrode projection area A1 and the second electrode projection area A2 (in which case, the remaining grooves 25 may be positioned outside the shortest connection path between the first electrode projection area A1 and the second electrode projection area A2).

[0031] Each groove 25 can have its length, width, and shape varied according to different design requirements. In embodiments of the present invention, each groove 25 may be a straight groove, a rectangular groove, a circular groove, an elliptical groove, a curved groove, a grid-like groove, a tree-like groove, or a radial groove.

[0032] Step S4: Perform a filling process to fill the transparent material 26 into at least one groove 25 to change the current transmission path of the mating side 24a.

[0033] Specifically, after performing the etching process in step S3, the present invention performs a filling process on the bonding side 24a of the current transport layer 24. The filling process mainly utilizes transparent material 26 to fill at least one groove 25, so that the transparent material 26 filled into the corresponding groove 25 can be considered as a three-dimensional current transport block or current blocking block after molding. The impedance value of the transparent material 26 is different from the impedance value of the current transport layer 24. The transparent material 26 is selected with different impedance values ​​depending on whether it will provide a current transport function or a current blocking function.

[0034] For example, assuming that the transparent material 26 will provide current transmission, the impedance of the transparent material 26 must be lower than the impedance of the current transmission layer 24. In embodiments of the present invention, the transparent material 26 is selected from one of the following groups of materials: silicon oxide (SiO2).x Silicon nitride (SiN) x ) and magnesium fluoride (MgF2). In embodiments of the present invention, the impedance value of the current transport layer 24 is 10 to 10 times the impedance value of the transparent material 26. 3 The invention may be multiple times, but it is not limited thereto.

[0035] For example, assuming that the transparent material 26 will provide current blocking functionality, the impedance value of the transparent material 26 must be higher than the impedance value of the current transport layer 24. In embodiments of the present invention, the transparent material 26 is selected from one of the following groups of materials: indium zinc oxide (IZO), aluminum zinc oxide (AZO), and indium tin oxide (ITO). In embodiments of the present invention, the impedance value of the transparent material 26 is 10 to 10 times the impedance value of the current transport layer 24. 3 The invention may be multiple times, but it is not limited thereto.

[0036] Reference Figure 6 and Figure 7 ,in Figure 6 This is a schematic diagram of a second embodiment of the current transmission path P formed on the bonding side 24a of the current transmission layer 24 according to the present invention. Figure 7 This is a schematic diagram of a third embodiment of the current transmission path P formed on the bonding side 24a of the current transmission layer 24 according to the present invention. In the following embodiments, the grooves 25 shown are all illustrated as rectangular grooves, but the present invention is not limited thereto. Figure 5 As shown, in this embodiment, a single groove 25 is formed on the bonding side 24a of the current transport layer 24, and the groove 25 is located on the shortest connection path between the first electrode projection area A1 and the second electrode projection area A2. The groove 25 is filled with a transparent material 26 with an impedance value higher than that of the current transport layer 24, so that the formed transparent material 26 serves as a current blocking block.

[0037] In existing flip-chip LED designs, the straight-line path between the first electrode projection area and the second electrode projection area is short and has a low impedance, causing current to choose this straight-line path for transmission. In contrast, in the embodiments of this disclosure, due to the impedance change caused by the aforementioned current-blocking block, the current primarily bypasses the transparent material 26 and propagates along both sides of the transparent material 26, forming a... Figure 5 The multiple current transmission paths P in the flip-chip LED create a current dispersion effect, thereby increasing the current flow area and thus increasing the light-emitting area and brightness of the flip-chip LED.

[0038] like Figure 6As shown, in this embodiment, two grooves 25 are formed on the bonding side 24a of the current transport layer 24, and these grooves 25 are located on both sides of the shortest connection path between the first electrode projection area A1 and the second electrode projection area A2, respectively. These grooves 25 are filled with a transparent material 26 whose impedance value is lower than that of the current transport layer 24, so that the formed transparent material 26 serves as a current transport block.

[0039] In this embodiment, due to the impedance change caused by the arrangement of the aforementioned current transmission blocks, the current mainly bypasses the shortest connection path between the first electrode projection area A1 and the second electrode projection area A2 and is transmitted along the transparent material 26 on both sides, thus forming a current transmission path. Figure 6 The multiple current transmission paths P in the flip-chip LED create a current dispersion effect, thereby increasing the current flow area and thus increasing the light-emitting area and brightness of the flip-chip LED.

[0040] like Figure 7 As shown, in this embodiment, three grooves 25 are formed on the bonding side 24a of the current transport layer 24, and these grooves 25 are located on the shortest connection path of the first electrode projection region A1 and the second electrode projection region A2, and on both sides of the shortest connection path, respectively. These grooves 25 are filled with a transparent material 26 whose impedance value is higher than that of the current transport layer 24, so that the formed transparent material 26 serves as a current blocking block.

[0041] In this embodiment, due to the impedance change caused by the aforementioned current blocking block, the current mainly bypasses the transparent material 26 and propagates along the path where the transparent material 26 is absent, thus forming a... Figure 7 The multiple current transmission paths P in the flip-chip LED create a current dispersion effect, thereby increasing the current flow area and thus increasing the light-emitting area and brightness of the flip-chip LED.

[0042] Accordingly, in this invention, multiple current transmission paths P are planned in locations where the transmission current of a typical flip-chip LED is less likely to pass through, in order to improve the problem of excessive current concentration in a typical flip-chip LED and increase the light-emitting area and brightness.

[0043] Furthermore, in its design, each current transmission path P has an impedance value within a set range. That is, in this invention, the impedance value of any current transmission path P is similar to that of another current transmission path P, both designed within the same set impedance range. In this case, the impedance values ​​of any two current transmission paths P will not differ too much, allowing current to be transmitted through these current transmission paths P, achieving a better current dispersion effect and preventing current from concentrating excessively on any one current transmission path P. Further, this invention can use etching and filling processes to create the current transmission paths P composed of these grooves 25 and transparent material 26, so that each current transmission path P has an impedance value within a set range (e.g., this set range is the same or similar to the impedance value of the aforementioned shortest path).

[0044] Step S5: Perform a bonding process to bond the second substrate 30 to the bonding side 24a.

[0045] Specifically, after performing the filling process in step S4 above, the present invention may next perform a bonding process on the semiconductor structure 20 to cover and bond the second substrate 30 to the bonding side 24a of the current transport layer 24, thereby completing the bonding between the second substrate 30 and the semiconductor structure 20. In an embodiment of the present invention, the second substrate 30 is a sapphire substrate, but the second substrate 30 may also be made of other materials with transparent properties, and the present invention is not limited thereto.

[0046] To facilitate the successful bonding of the second substrate 30 to the bonding side 24a of the current transmission layer 24, in embodiments of the present invention, at least one bonding material M may be applied to the bonding side 24a before performing the bonding process. The at least one bonding material M is an adhesive, gel-like material. For example, the at least one bonding material M may be a composite coating of silicon dioxide (SiO2) and aluminum oxide (Al2O3), but the present invention is not limited thereto.

[0047] Step S6: Remove the first substrate 10 and form a first electrode 40 and a second electrode 50 on the side of the semiconductor structure 20 adjacent to the first substrate 10, wherein the position of the first electrode 40 corresponds to the first electrode projection area A1 and the first electrode 40 is electrically connected to the first semiconductor epitaxial layer 21, and the position of the second electrode 50 corresponds to the second electrode projection area A2 and the second electrode 50 is electrically connected to the current transport layer 24.

[0048] Specifically, after performing the bonding process in step S5, the present invention can remove the first substrate 10 adjacent to the semiconductor structure 20. Next, etching and electrode forming processes are performed on the side of the semiconductor structure 20 originally adjacent to the first substrate 10 to form a first electrode 40 and a second electrode 50 on the semiconductor structure 20. The first electrode 40 is electrically connected to the first semiconductor epitaxial layer 21, and its position corresponds to the first electrode projection area A1. The second electrode 50 is electrically connected to the current transport layer 24, and its position corresponds to the second electrode projection area A2. In embodiments of the present invention, the first electrode 40 is an N-metal electrode, and the second electrode 50 is a P-metal electrode. Since the structural configuration of the first electrode 40 and the second electrode 50 is a common design for flip-chip light-emitting diodes, it will not be described in detail here.

[0049] Accordingly, the flip-chip light-emitting diode 1 of the present invention can be manufactured using the manufacturing method of the present invention. When power is supplied to the first electrode 40 and the second electrode 50 of the flip-chip light-emitting diode 1 of the present invention, the current can be transmitted through the second electrode 50 along at least one current transmission path P planned in the current transmission layer 24, and then through the light-emitting layer 22 to emit light, and finally flow to the first electrode 40; while the light emitted by the light-emitting layer 22 is emitted from the second substrate 30. Since these current transmission paths P are planned so that the current can flow through the positions that are originally difficult to conduct due to the high impedance value of the path, the current is evenly distributed throughout the current transmission layer 24, thereby increasing the overall light-emitting area of ​​the flip-chip light-emitting diode 1 of the present invention and reducing the current density. In addition, the above design can also improve the heat dissipation effect and anti-static capability of the flip-chip light-emitting diode 1 of the present invention.

[0050] Reference Figure 3 and Figure 8 ,in, Figure 8 A schematic diagram of a flip-chip light-emitting diode 1 manufactured using the flip-chip light-emitting diode manufacturing method of the present invention. (See diagram below.) Figure 3 and Figure 8 As shown, the present invention also includes a flip-chip light-emitting diode 1 manufactured using the above-described method for manufacturing flip-chip light-emitting diodes. In the relevant process, the flip-chip light-emitting diode 1 of the present invention modifies at least one current transmission path P formed on the junction side 24a by forming at least one groove 25 filled with transparent material 26 on the junction side 24a of the current transmission layer 24, serving as a corresponding current transmission block or current blocking block. Since the structural elements and their functions of the flip-chip light-emitting diode 1 of the present invention have been described in the above steps, further details are omitted here.

[0051] The above embodiments are merely illustrative in nature and are not intended to limit the embodiments of the subject matter of the application or the application or use of such embodiments. Furthermore, although at least one exemplary embodiment has been presented in the above embodiments, it should be understood that numerous variations are possible with respect to the invention. It should also be understood that the embodiments described herein are not intended to limit the scope, use, or configuration of the claimed subject matter in any way. Rather, the above embodiments will provide those skilled in the art with a simple guide to implementing one or more of the described embodiments. Moreover, various changes can be made to the function and arrangement of the elements without departing from the scope defined by the claims, and the claims include known equivalents and all foreseeable equivalents at the time of filing of this patent application.

[0052] [Symbol Explanation] 1: Flip LED 10: First basement 20: Semiconductor Structure 21: First semiconductor epitaxial layer 22: Emissive layer 23: Second semiconductor epitaxial layer 24: Current transport layer 24a: Joint side 25: Groove 26: Transparent materials 30: Second basement 40: First electrode 50: Second electrode A1: Projection area of ​​the first electrode A2: Projection area of ​​the second electrode M: Bonding material P: Current transmission path S1-S6: Steps (Prior art) 200: Flip LED 210: P metal electrode 220: N metal electrode 230: Semiconductor light-emitting structure 240: Current transport layer 240a: Joint side 241, 242: Projection positions 250: Transparent substrate.

Claims

1. A method for manufacturing a flip-chip light-emitting diode, the method comprising the following steps: Provide the first base; An epitaxial process is performed to form a semiconductor structure on the first substrate, wherein the semiconductor structure comprises, in sequence, a first semiconductor epitaxial layer, a light-emitting layer, a second semiconductor epitaxial layer and a current transport layer at a location adjacent to the first substrate, and the current transport layer forms a bonding side and defines a first electrode projection region and a second electrode projection region. An etching process is performed to form at least one groove on the bonding side, wherein each of the at least one groove extends from a side adjacent to the first electrode projection area to a side adjacent to the second electrode projection area; A filling process is performed to fill the at least one groove with a transparent material to alter the current transmission path on the mating side; Perform a bonding process to bond the second substrate to the bonding side; and The first substrate is removed and a first electrode and a second electrode are formed on the side of the semiconductor structure adjacent to the first substrate, wherein the position of the first electrode corresponds to the projection area of ​​the first electrode and the first electrode is electrically connected to the first semiconductor epitaxial layer, and the position of the second electrode corresponds to the projection area of ​​the second electrode and the second electrode is electrically connected to the current transport layer.

2. The method for manufacturing a flip-chip light-emitting diode according to claim 1, wherein, The at least one groove is located at a position other than the shortest connecting path between the first electrode projection area and the second electrode projection area.

3. The method for manufacturing a flip-chip light-emitting diode according to claim 2, wherein, The impedance value of the transparent material is lower than that of the current transport layer.

4. The method for manufacturing a flip-chip light-emitting diode according to claim 3, wherein, The impedance value of the current transport layer is 10 to 10 times the impedance value of the transparent material. 3 times.

5. The method for manufacturing a flip-chip light-emitting diode according to claim 2, wherein, The transparent material is selected from one of the following groups of materials: silicon oxide, silicon nitride, and magnesium fluoride.

6. The method for manufacturing a flip-chip light-emitting diode according to claim 1, wherein, One of the at least one grooves is located on the shortest path connecting the first electrode projection area and the second electrode projection area.

7. The method for manufacturing a flip-chip light-emitting diode according to claim 6, wherein, The impedance value of the transparent material is higher than that of the current transport layer.

8. The method for manufacturing a flip-chip light-emitting diode according to claim 7, wherein, The impedance value of the transparent material is 10 to 10 times the impedance value of the current transport layer. 3 times.

9. The method for manufacturing a flip-chip light-emitting diode according to claim 6, wherein, The transparent material is selected from one of the following groups of materials: indium zinc oxide, aluminum zinc oxide, and indium tin oxide.

10. The method for manufacturing a flip-chip light-emitting diode according to claim 1, wherein, Each of the at least one groove is a straight groove, a rectangular groove, a circular groove, an elliptical groove, a curved groove, a grid-like groove, a tree-like groove, or a radial groove.

11. A flip-chip light-emitting diode, wherein, The flip-chip light-emitting diode is manufactured using the manufacturing method of a flip-chip light-emitting diode according to any one of claims 1 to 10.

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