Light emitting element

Abstract

This invention provides a light-emitting element capable of reducing forward voltage degradation and improving light extraction efficiency. The semiconductor structure includes: an n-side semiconductor layer having a first surface, a plurality of second surfaces located opposite to the first surface in a first direction, and a third surface located opposite to the first surface in the first direction; and a plurality of light-emitting portions having active layers and p-side semiconductor layers respectively disposed on the plurality of second surfaces. The third surface, viewed from above, is located between the plurality of light-emitting portions and is exposed from the active layer and the p-side semiconductor layer. An n-side electrode is disposed on the third surface and electrically connected to the n-side semiconductor layer. The third surface has a first region and a second region located in a first direction closer to the first surface than the first region. The n-side electrode is electrically connected to the n-side semiconductor layer in the first region.

Description

Technical Field

[0001] This disclosure relates to light-emitting elements. Background Technology

[0002] For example, Patent Document 1 discloses a structure in which a trench is formed in a semiconductor stack, extending from the second semiconductor layer side through the second semiconductor layer and the active region to the first semiconductor layer, enabling multiple regions divided by the trench to emit light individually.

[0003] Existing technical documents

[0004] Patent documents

[0005] Patent Document 1: Japanese Patent Publication No. 2016-513876 Summary of the Invention

[0006] The technical problem that the invention aims to solve

[0007] The purpose of this disclosure is to provide a light-emitting element that can reduce the degradation of the forward voltage and improve the light extraction efficiency.

[0008] Technical solutions for solving technical problems

[0009] According to one aspect of this disclosure, a light-emitting element comprises: a semiconductor structure having: an n-side semiconductor layer having a first surface, a plurality of second surfaces located opposite to the first surface in a first direction, and a third surface located opposite to the first surface in the first direction; a plurality of light-emitting portions having an active layer and a p-side semiconductor layer respectively disposed on the plurality of second surfaces, the third surface being located between the plurality of light-emitting portions in a top view and exposed from the active layer and the p-side semiconductor layer; an n-side electrode disposed on the third surface and electrically connected to the n-side semiconductor layer; and a p-side electrode disposed on the p-side semiconductor layer of the plurality of light-emitting portions and electrically connected to the p-side semiconductor layer, the third surface having: a first region; and a second region located in the first direction at a position closer to the first surface than the first region, the n-side electrode being electrically connected to the n-side semiconductor layer in the first region.

[0010] Invention Effects

[0011] According to this disclosure, a light-emitting element that can reduce the degradation of forward voltage and improve light extraction efficiency can be provided. Attached Figure Description

[0012] Figure 1 This is a schematic top view of the light-emitting element according to the first embodiment.

[0013] Figure 2 This is a schematic top view of the light-emitting element according to the first embodiment.

[0014] Figure 3 yes Figure 1 A schematic cross-sectional view at line III-III.

[0015] Figure 4 yes Figure 1 A schematic cross-sectional view at line IV-IV.

[0016] Figure 5 This is a schematic top view of the light-emitting element of the first variation of the first embodiment.

[0017] Figure 6 This is a schematic top view of the light-emitting element in a second variation of the first embodiment.

[0018] Figure 7 This is a schematic top view of the light-emitting element according to the second embodiment.

[0019] Figure 8 This is a schematic top view of the light-emitting element according to the third embodiment.

[0020] Figure 9 This is a schematic top view of the light-emitting element according to the fourth embodiment.

[0021] Figure 10A This is a schematic top view illustrating one step of the manufacturing method of the light-emitting element according to the first embodiment.

[0022] Figure 10B yes Figure 10A A schematic cross-sectional view at the XB-XB line.

[0023] Figure 10C yes Figure 10A A schematic cross-sectional view at the XC-XC line.

[0024] Figure 10D This is a schematic top view illustrating one step of the manufacturing method of the light-emitting element according to the first embodiment.

[0025] Figure 10E This is a schematic top view illustrating one step of the manufacturing method of the light-emitting element according to the first embodiment.

[0026] Figure 10F yes Figure 10E A schematic cross-sectional view at the XF-XF line.

[0027] Figure 10G This is a schematic cross-sectional view illustrating a step in the manufacturing method of the light-emitting element according to the first embodiment.

[0028] Figure 10H This is a schematic cross-sectional view illustrating a step in the manufacturing method of the light-emitting element according to the first embodiment.

[0029] Figure 10I This is a schematic cross-sectional view illustrating a step in the manufacturing method of the light-emitting element according to the first embodiment.

[0030] Figure 10J This is a schematic cross-sectional view illustrating a step in the manufacturing method of the light-emitting element according to the first embodiment.

[0031] Figure 10K This is a schematic cross-sectional view illustrating a step in the manufacturing method of the light-emitting element according to the first embodiment.

[0032] Figure 10L This is a schematic cross-sectional view illustrating a step in the manufacturing method of the light-emitting element according to the first embodiment.

[0033] Figure 10M This is a schematic cross-sectional view illustrating a step in the manufacturing method of the light-emitting element according to the first embodiment.

[0034] Figure 10N This is a schematic cross-sectional view illustrating a step in the manufacturing method of the light-emitting element according to the first embodiment.

[0035] Figure 10O This is a schematic cross-sectional view illustrating a step in the manufacturing method of the light-emitting element according to the first embodiment.

[0036] Figure 10P This is a schematic cross-sectional view illustrating a step in the manufacturing method of the light-emitting element according to the first embodiment.

[0037] Figure 10Q This is a schematic cross-sectional view illustrating a step in the manufacturing method of the light-emitting element according to the first embodiment.

[0038] Figure 10R This is a schematic cross-sectional view illustrating a step in the manufacturing method of the light-emitting element according to the first embodiment.

[0039] Figure 10S This is a schematic cross-sectional view illustrating a step in the manufacturing method of the light-emitting element according to the first embodiment.

[0040] Figure 10T This is a schematic cross-sectional view illustrating a step in the manufacturing method of the light-emitting element according to the first embodiment.

[0041] Figure 11A This is a schematic top view of the semiconductor structure in the first sample of the light-emitting element.

[0042] Figure 11B This is a schematic top view of the semiconductor structure in the second sample of the light-emitting element.

[0043] Figure 11C This is a schematic top view of the semiconductor structure in the third sample of the light-emitting element.

[0044] Figure 11D This is a schematic top view of the semiconductor structure in the fourth sample of the light-emitting element. Detailed Implementation

[0045] Hereinafter, embodiments will be described with reference to the accompanying drawings. The dimensions, materials, shapes, and relative arrangements of the components described in the embodiments are not limited to these unless specifically stated otherwise; they are merely illustrative examples. It should be noted that the sizes and positional relationships of the components shown in the accompanying drawings are sometimes exaggerated for clarity. Furthermore, in the following description, the same names and reference numerals denote the same or similar components, and detailed descriptions are appropriately omitted. Additionally, cross-sectional views are sometimes shown as end views showing only the cut surface.

[0046] In the following description, terms indicating specific directions or positions (e.g., "upper," "lower," and other terms containing these terms) are sometimes used. However, these terms are used only for ease of understanding of the relative directions or positions in the referenced figures. As long as the relative directions or positions of terms such as "upper" and "lower" in the referenced figures are the same, the configuration in figures other than those in this disclosure, actual products, etc., may not be the same as the referenced figures. The positional relationship expressed as "upper (or lower)" in this specification includes, for example, the case where two components are assumed to exist, the case where the two components are in contact and the case where the two components are not in contact and one component is above (or below) the other component. In addition, unless specifically stated otherwise, the component covering the object includes the case where the component directly covers the object in contact with it and the case where the component indirectly covers the object without contact. In this specification, "top view" means viewing the light-emitting element 1 from the first surface 11A side or the second surface 11B side of the first semiconductor layer 11. It should be noted that in this instruction manual, in addition to the parts that can be seen directly from above, the term "view from above" is sometimes used to describe the parts that cannot be seen directly from above, similar to perspective.

[0047] In the diagrams shown below, directions are sometimes represented by the X-axis, Y-axis, and Z-axis. The X-axis, Y-axis, and Z-axis are orthogonal to each other. For example, in this specification, the direction along the Z-axis is designated as the first direction Z, the direction along the X-axis is designated as the second direction X, and the direction along the Y-axis is designated as the third direction Y.

[0048] [First Implementation]

[0049] Reference Figures 1 to 4 The light-emitting element 1 of the first embodiment will be described.

[0050] Figure 1 This is a schematic top view of the light-emitting element 1 as seen from the second surface 11B side of the first semiconductor layer 11.

[0051] Figure 2 This is a schematic top view of the light-emitting element 1 as seen from the first surface 11A side of the first semiconductor layer 11. Figure 2 The plane shown is the main light-emitting surface of the light-emitting element 1.

[0052] Figure 3 yes Figure 1 A schematic cross-sectional view at line III-III.

[0053] Figure 4 yes Figure 1 A schematic cross-sectional view at line IV-IV.

[0054] The light-emitting element 1 of the first embodiment includes a semiconductor structure 10, an n-side electrode 21, and a plurality of p-side electrodes 22.

[0055] <Semiconductor Structure 10>

[0056] The semiconductor structure 10 is made of a nitride semiconductor. In this specification, "nitride semiconductor" is, for example, included in In... x Al y Ga 1-x-y Semiconductors with a chemical formula of N (0≤x≤1, 0≤y≤1, x+y≤1) in which the composition ratios x and y vary within their respective ranges. In addition, compounds containing Group V elements other than N (nitrogen) and compounds containing various elements added to control various physical properties such as conductivity are also included in "nitride semiconductors".

[0057] like Figure 3 and Figure 4 As shown, the semiconductor structure 10 has an n-side semiconductor layer 11. The n-side semiconductor layer 11 has a semiconductor layer containing n-type impurities. The n-side semiconductor layer 11 has a first surface 11A, a plurality of second surfaces 11B, and a third surface 11C. The second surfaces 11B and the third surface 11C are located opposite to the first surface 11A in the first direction Z. The thickness of the n-side semiconductor layer 11 can be, for example, set to be more than 1 μm and less than 10 μm. It should be noted that the thickness of the n-side semiconductor layer 11 refers to the maximum thickness of the n-side semiconductor layer 11 in the first direction Z.

[0058] like Figure 2As shown, the outer edge shape of the first surface 11A when viewed from above can be, for example, a square, a rectangle, or other quadrilateral shape. It should be noted that the shape of the first surface 11A when viewed from above can be a roughly square or roughly rectangular shape with at least one corner chamfered. When the shape of the first surface 11A when viewed from above is a square, the length of one side of the first surface 11A can be, for example, 5 μm or more and 200 μm or less, preferably 10 μm or more and 100 μm or less.

[0059] like Figure 3 and Figure 4 As shown, the semiconductor structure 10 has multiple light-emitting portions 100, each having an active layer 12 and a p-side semiconductor layer 13 respectively disposed on multiple second surfaces 11B. The active layer 12 is located in the first direction Z between the second surface 11B of the n-side semiconductor layer 11 and the p-side semiconductor layer 13. The p-side semiconductor layer 13 has a semiconductor layer containing p-type impurities. The active layer 12 is a light-emitting layer, for example having an MQW (Multiple Quantumwell) structure including multiple barrier layers and multiple well layers. The active layer 12, for example, emits light with a peak wavelength of 210 nm or more and 580 nm or less. Additionally, the semiconductor structure 10 has an outer surface 10C. The outer surface 10C connects the first surface 11A of the n-side semiconductor layer 11 to the fourth surface 13A of the p-side semiconductor layer 13 located opposite to the active layer 12.

[0060] like Figure 1 As shown, the third surface 11C of the n-side semiconductor layer 11 is located between multiple light-emitting portions 100 when viewed from above. Figure 3 and Figure 4 As shown, the third surface 11C is exposed from the active layer 12 and the p-side semiconductor layer 13.

[0061] The semiconductor structure 10 has a recess 10E that is recessed from the fourth surface 13A of the p-side semiconductor layer 13 toward the first surface 11A of the n-side semiconductor layer 11. The third surface 11C defines the bottom surface of the recess 10E. The inner surface 10D of the semiconductor structure 10 defining the side surface of the recess 10E connects the third surface 11C of the n-side semiconductor layer 11 to the fourth surface 13A of the p-side semiconductor layer 13, and includes the side surface of the n-side semiconductor layer 11, the side surface of the active layer 12, and the side surface of the p-side semiconductor layer 13.

[0062] like Figure 1As shown, in this embodiment, the semiconductor structure 10 has, for example, four light-emitting portions 100. The four light-emitting portions 100 include a first light-emitting portion 100A, a second light-emitting portion 100B, a third light-emitting portion 100C, and a fourth light-emitting portion 100D. The second light-emitting portion 100B is adjacent to the first light-emitting portion 100A in the second direction X. The third light-emitting portion 100C is adjacent to the first light-emitting portion 100A in the third direction Y. The fourth light-emitting portion 100D is adjacent to the third light-emitting portion 100C in the second direction X and to the second light-emitting portion 100B in the third direction Y.

[0063] In this embodiment, when viewed from above, the recess 10E and the third surface 11C are located at the central portion of the semiconductor structure 10 and extend in a direction from the central portion of the semiconductor structure 10 toward the outer edge 10F of the semiconductor structure 10. When viewed from above, the extensions of the recess 10E and the third surface 11C are located between the first light-emitting portion 100A and the second light-emitting portion 100B, between the first light-emitting portion 100A and the third light-emitting portion 100C, between the third light-emitting portion 100C and the fourth light-emitting portion 100D, and between the second light-emitting portion 100B and the fourth light-emitting portion 100D.

[0064] The third surface 11C of the n-side semiconductor layer 11 has a first region 11C1 and a second region 11C2. Figure 3 This represents a cross-section containing the portion of the first region 11C1. Figure 4 This represents a cross-section of the portion including the second region 11C2. The second region 11C2 is located in the first direction Z closer to the first surface 11A than the first region 11C1. In other words, the depth of the recess 10E in the second region 11C2 in the first direction Z is greater than the depth of the recess 10E in the first region 11C1 in the first direction Z, and the inner surface 10D of the semiconductor structure 10 defining the side surface of the recess 10E in the second region 11C2 extends towards the first surface 11A more than the inner surface 10D of the semiconductor structure 10 defining the side surface of the recess 10E in the first region 11C1. Therefore, in the second region 11C2, light from the light-emitting unit 100 can be reflected by the inner surface 10D of the semiconductor structure 10 and easily directed towards the first surface 11A, thereby improving the light extraction efficiency from the first surface 11A in each light-emitting unit 100. The depth of the recess 10E in the first region 11C1 in the first direction Z is, for example, 0.5 μm or more and 2 μm or less. The depth of the recess 10E in the second region 11C2 in the first direction Z is, for example, more than 1.5 μm and less than 6 μm.

[0065] <n-side electrode 21>

[0066] In this embodiment, the n-side electrode 21 is disposed on the third surface 11C located in the central part of the semiconductor structure 10 and is electrically connected to the n-side semiconductor layer 11. The third surface 11C located in the central part of the semiconductor structure 10 is a first region 11C1, and the n-side electrode 21 is electrically connected to the n-side semiconductor layer 11 in the first region 11C1.

[0067] The depth of the recess 10E in the first region 11C1 is shallower than the depth of the recess 10E in the second region 11C2. In other words, the thickness of the n-side semiconductor layer 11 in the first direction Z between the first region 11C1 and the first surface 11A is thicker than the thickness of the n-side semiconductor layer 11 in the first direction Z between the second region 11C2 and the first surface 11A. As a result, the deterioration of the forward voltage caused by the thinning of the n-side semiconductor layer 11 in the portion where the n-side electrode 21 is disposed can be reduced.

[0068] As explained above, the light-emitting element 1 according to this embodiment can reduce the deterioration of the forward voltage by arranging the n-side electrode 21 in the first region 11C1, and improve the light extraction efficiency by arranging the second region 11C2.

[0069] The n-side electrode 21 can be configured as, for example, a single metal layer comprising Ti, Cr, Rh, Au, Pt, Al, Ag, or Ru, or a stacked structure comprising at least two of these metal layers.

[0070] In this embodiment, when viewed from above, an n-side electrode 21 is disposed at the center of the light-emitting element 1. This reduces the unevenness of the distance between each light-emitting part 100A, 100B, 100C, 100D and the n-side electrode 21, thereby reducing the unevenness of the brightness of each light-emitting part 100A, 100B, 100C, 100D.

[0071] <p-side electrode 22>

[0072] Multiple p-side electrodes 22 are respectively disposed on the p-side semiconductor layer 13 of each of the multiple light-emitting portions 100 and are electrically connected to the p-side semiconductor layer 13 of each of the multiple light-emitting portions 100. In this embodiment, the p-side electrodes 22 are electrically connected to the p-side semiconductor layer 13 via the light-transmitting electrode 31 described later. The p-side electrodes 22 can be a single-layer metal layer of the same material as the n-side electrodes 21, or a stacked structure containing at least two of these metal layers.

[0073] The multiple p-side electrodes 22 are anode electrodes that supply current to the multiple light-emitting parts 100 respectively. The n-side electrode 21 is a cathode electrode shared by the multiple light-emitting parts 100. By supplying current to the p-side electrode 22 corresponding to the light-emitting part 100 that is to emit light, the light emission of the multiple light-emitting parts 100 can be individually controlled.

[0074] Compared to a light-emitting element having multiple n-side electrodes 21 electrically connected to multiple light-emitting portions 100, the light-emitting element 1 of this embodiment, with the same area of ​​the light-emitting element when viewed from above, can reduce the area of ​​the third surface 11C when viewed from above. This allows for a relatively larger increase in the area of ​​the light-emitting portion 100 (active layer 12) when viewed from above, thereby improving the brightness of the light-emitting element 1.

[0075] In this embodiment, such as Figure 1 As shown, four p-side electrodes 22, which supply current to the four light-emitting portions 100 respectively, are respectively disposed near the four corners of the semiconductor structure 10, which is quadrilateral when viewed from above. When viewed from above, the distance between the n-side electrode 21 located in the center of the semiconductor structure 10 and each of the four p-side electrodes 22 is approximately the same. As a result, the unevenness of the distance between the n-side electrode 21 and each p-side electrode 22 can be reduced, thereby reducing the unevenness of the brightness of each light-emitting portion 100A, 100B, 100C, and 100D.

[0076] In this embodiment, such as Figure 1 As shown, in top view, the recess 10E and the third surface 11C extend in a direction from the n-side electrode 21 disposed in the center of the semiconductor structure 10 toward the four outer edges 10F of the semiconductor structure 10. The recess 10E and the third surface 11C extend along the second direction X and the third direction Y, respectively, in top view. The second region 11C2 extends between adjacent light-emitting portions 100 along the extending directions of the recess 10E and the third surface 11C. Figure 1 In the example shown, a second region 11C2 is configured in an extension of the third surface 11C, but multiple second regions 11C2 may also be configured separately from each other in the extension direction of the third surface 11C.

[0077] The recess 10E reduces light propagation between adjacent light-emitting portions 100. Therefore, when controlling the light emission of multiple light-emitting portions 100 individually, in the second region 11C2, where the depth of the recess 10E is deeper than that of the first region 11C1, the propagation of light emitted from the active layer 12 of the light-emitting portion 100 (which is the light-emitting target) to the adjacent light-emitting portion 100 (which is not the light-emitting target) located across the recess 10E can be reduced, and the amount of light emitted from the first surface 11A opposite to the light-emitting portion 100 (which is not the light-emitting target) can be reduced. As a result, the difference in brightness between the light-emitting portion 100 (which is the light-emitting target) and the light-emitting portion 100 (which is not the light-emitting target) can be increased, and the contrast between light and dark can be significantly improved.

[0078] In this embodiment, the first surface 11A of the n-side semiconductor layer 11 has an inner region 11A1 and an outer region 11A2. For example... Figure 2As shown, in a top view, the outer region 11A2 continuously surrounds the inner region 11A1. In a top view, the outer region 11A2 is located at the outer edge 10F of the semiconductor structure 10 (in...). Figure 2 The outer region 11A2 is located between the outer edge of the first surface 11A and the inner region 11A1 in the plane shown. The outer region 11A2 is a region extending from the outer edge 10F (outer edge of the first surface 11) of the semiconductor structure 10 in a top view, for example, between 4 μm and 6 μm. In a top view, the area of ​​the inner region 11A1 is larger than the area of ​​the outer region 11A2. Light emitted from the active layer 12 is primarily extracted from the inner region 11A1 to the outside of the semiconductor structure 10. The arithmetic mean roughness of the inner region 11A1 is greater than the arithmetic mean roughness of the outer region 11A2. This improves the light extraction efficiency from the inner region 11A1. It should be noted that the arithmetic mean roughness of the outer region 11A2 can also be the same as the arithmetic mean roughness of the inner region 11A1.

[0079] like Figure 3 and Figure 4 As shown, in this embodiment, the outer surface 10C of the semiconductor structure 10 is inclined relative to the first surface 11A, and the outer surface 10C forms an acute angle with the first surface 11A. In this case, the outer edge portion of the first surface 11A is prone to damage. By making the arithmetic mean roughness of the outer region 11A2, which includes the outer edge of the first surface 11A, less than the arithmetic mean roughness of the inner region 11A1, damage to the outer edge portion of the first surface 11A can be reduced. It should be noted that the outer surface 10C can be perpendicular to the first surface 11A or it can be an obtuse angle.

[0080] As described below, the inner region 11A1 is a region that has undergone roughening treatment by dry etching or wet etching, while the outer region 11A2 is a region that has not undergone such roughening treatment. For example, the arithmetic mean roughness of the inner region 11A1 is greater than or equal to 100 nm and less than or equal to 1000 nm, while the arithmetic mean roughness of the outer region 11A2 is less than or equal to 50 nm.

[0081] In this embodiment, such as Figure 1 As shown, in a top view, the first region 11C1 is located at the outer edge 10F of the semiconductor structure 10, while the second region 11C2 is not located at the outer edge 10F of the semiconductor structure 10. By making the portion of the n-side semiconductor layer 11 with a thinner thickness, i.e., the second region 11C2, not located at the outer edge 10F of the semiconductor structure 10, the reduction in the strength of the outer edge 10F of the semiconductor structure 10 can be reduced, and defects in the semiconductor structure 10 can be reduced.

[0082] The light-emitting element 1 in this embodiment may further have the configuration described below.

[0083] <Transparent Electrode 31>

[0084] like Figure 3 and Figure 4 As shown, the light-transmitting electrodes 31 are respectively disposed on the fourth surface 13A of the p-side semiconductor layer 13 of the plurality of light-emitting parts 100, and are electrically connected to the p-side semiconductor layer 13. Figure 1 As shown, when viewed from above, the light-transmitting electrode 31 is disposed in the region overlapping with the light-emitting portion 100. The transmittance of the light-transmitting electrode 31 relative to the peak wavelength of the light emitted from the active layer 12 is, for example, 70% or more, preferably 90% or more. Furthermore, the light-transmitting electrode 31 is conductive, enabling the current supplied through the p-side electrode 22 to diffuse in the surface direction of the p-side semiconductor layer 13. Materials for the light-transmitting electrode 31 can include, for example, ITO (Indium Tin Oxide), IZO (Indium Zinc Oxide), ZnO, In2O3, etc.

[0085] <First insulating film 33>

[0086] like Figure 3 and Figure 4 As shown, the first insulating film 33 covers the fourth surface 13A of the p-side semiconductor layer 13 and the light-transmitting electrode 31. For example, a dielectric multilayer film can be used as the first insulating film 33. Light from the active layer 12 toward the p-side semiconductor layer 13 can be reflected toward the first surface 11A through the first insulating film 33. This improves the light extraction efficiency from the first surface 11A.

[0087] The first insulating film 33 can further cover the side surface of the light-emitting part 100. As a result, the amount of light reflected towards the inner region 11A1 can be increased, and the light extraction efficiency from the inner region 11A1 can be further improved.

[0088] The first insulating film 33 covers the inner surface 10D, the third surface 11C, the n-side electrode 21, and the p-side electrode 22 of the semiconductor structure 10. For example... Figure 3 As shown, the first insulating film 33 has a first opening 33a located above the n-side electrode 21 and a second opening 33b located above the p-side electrode 22.

[0089] <Metal Film 34>

[0090] like Figure 3 and Figure 4 As shown, the metal film 34 is disposed on the first insulating film 33. By reflecting light that has passed through the first insulating film 33 toward the first surface 11A side through the metal film 34, the light extraction efficiency can be improved. The metal film 34 can be, for example, a single-layer metal film containing Al, Ag, or Ti, or a stacked structure containing these metal films.

[0091] <Second insulating film 41>

[0092] like Figure 3 and Figure 4 As shown, the second insulating film 41 covers the first insulating film 33 and the metal film 34. Additionally, the second insulating film 41 covers the outer surface 10C of the semiconductor structure 10. As the second insulating film 41, for example, a single-layer insulating film comprising SiO2, SiN, or SiON, or a laminated structure comprising at least two of these insulating films, can be used. The first insulating film 41 has a third opening 41a and a fourth opening 41b. Figure 1 As shown, the third opening 41a is located inside the first opening 33a of the first insulating film 33, and the fourth opening 41b is located inside the second opening 33b of the first insulating film 33.

[0093] <n-side conductive component 61>

[0094] like Figure 3 As shown, the n-side conductive component 61 is disposed on the second insulating film 41. The n-side conductive component 61 is electrically connected to the n-side electrode 21 at the third opening 41a and the first opening 33a. The n-side conductive component 61 can be, for example, a single metal layer comprising Ti, Cr, Rh, Au, Pt, Ru, or Al, or a stacked structure comprising at least two of these metal layers. Figure 1 As shown, the n-side conductive component 61 is positioned at the center of the light-emitting element 1 when viewed from above.

[0095] <p-side conductive component 62>

[0096] like Figure 3 and Figure 4 As shown, the p-side conductive component 62 is disposed on the second insulating film 41. The p-side conductive component 62 is electrically connected to the p-side electrode 22 at the fourth opening 41b and the second opening 33b. The p-side conductive component 62 can be a single-layer metal layer of the same material as the n-side conductive component 61, or a laminated structure containing at least two of these metal layers. Figure 1 As shown, the four p-side conductive components 62 corresponding to the four light-emitting parts 100A, 100B, 100C, and 100D are arranged overlapping with the p-side electrode 22 when viewed from above.

[0097] <First protective film 32>

[0098] like Figure 3 and Figure 4 As shown, the first protective film 32 covers the outer region 11A2 of the first surface 11A. The first protective film 32 can be, for example, a single-layer insulating film comprising SiO2, SiN, or SiON, or a laminated structure comprising at least two of these insulating films.

[0099] <Second protective film 51>

[0100] like Figure 3 and Figure 4 As shown, the second protective film 51 covers the first surface 11A. The second protective film 51 directly covers the inner region 11A1 of the first surface 11A. The second protective film 51 covers the outer region 11A2 of the first surface 11A via the first protective film 32. The transmittance of the second protective film 51 relative to the peak wavelength of light emitted from the active layer 12 is, for example, 70% or more, preferably 90% or more. As the second protective film 51, for example, a single-layer insulating film comprising SiO2, SiN, or SiON, or a laminated structure comprising at least two of these insulating films, can be used.

[0101] [First variation]

[0102] Figure 5 This is a schematic top view of the light-emitting element of the first variation of the first embodiment.

[0103] In the first variation, the second region 11C2 has a first portion 11C2A and a second portion 11C2B located at mutually separated positions along the extension direction of the third surface 11C. The first portion 11C2A is located closer to the n-side electrode 21 in the extension direction of the third surface 11C than the second portion 11C2B. The second portion 11C2B is located farther away from the n-side electrode 21 in the extension direction of the third surface 11C than the first portion 11C2A. It should be noted that in the second and third variations described later, the second region 11C2 also has a first portion 11C2A located near the n-side electrode 21 and a second portion 11C2B located farther away from the n-side electrode 21 than the first portion 11C2A.

[0104] In the first variation, the width of the first portion 11C2A in the direction orthogonal to the extension direction of the third surface 11C is greater than the width of the second portion 11C2B in the same direction. For example, the width of the first portion 11C2A in the direction orthogonal to the extension direction of the third surface 11C is the same as the width of the first region 11C1 in the same direction. The width of the second portion 11C2B in the direction orthogonal to the extension direction of the third surface 11C is smaller than the width of the first region 11C1 in the same direction.

[0105] In the light-emitting section 100, the current density and luminous intensity tend to be higher in the region near the n-side electrode 21 compared to the region relatively far from the n-side electrode 21. When the luminous intensity is high, the light propagating between adjacent light-emitting sections 100 tends to increase. By making the width of the first portion 11C2A near the n-side electrode 21 greater than the width of the second portion 11C2B, the light extraction efficiency from the first surface 11A can be improved by light reflection in the first portion 11C2A in the region of high luminous intensity.

[0106] By reducing the width of the second portion 11C2B in the region with relatively low luminous intensity, the area of ​​the deeper second region 11C2 in the recess 10E can be reduced, thereby increasing the strength of the semiconductor structure 10.

[0107] It should be noted that the width of the second portion 11C2B in the direction orthogonal to the extension direction of the third surface 11C can also be larger than the width of the first region 11C1 in the same direction. For example, the width of the second region 11C2 in the direction orthogonal to the extension direction of the third surface 11C can be more than 50% and less than 100% of the width of the first region 11C1 in the same direction.

[0108] [Second variation]

[0109] Figure 6 This is a schematic top view of the light-emitting element in a second variation of the first embodiment.

[0110] In the second variation, the length of the first portion 11C2A in the extension direction of the third surface 11C is greater than the length of the second portion 11C2B in the extension direction of the third surface 11C. Therefore, in regions with high luminous intensity, the length of the third surface 11C in the extension direction of the inner surface 10D of the semiconductor structure 10 can be increased, and the light extraction efficiency from the first surface 11A can be improved by light reflection at the inner surface 10D. The length of the first portion 11C2A in the extension direction of the third surface 11C is, for example, 1 μm or more and 10 μm or less. The length of the second portion 11C2B in the extension direction of the third surface 11C is, for example, 5 μm or more and 20 μm or less.

[0111] By reducing the length of the second portion 11C2B in the region with relatively low luminous intensity, the area of ​​the second region 11C2 in the recess 10E can be reduced, thereby increasing the strength of the semiconductor structure 10.

[0112] [Third variation]

[0113] In the third variation, the distance between the first portion 11C2A and the first surface 11A in the first direction Z is less than the distance between the second portion 11C2B and the first surface 11A in the first direction Z. In other words, the depth of the recess 10E in the first portion 11C2A is greater than the depth of the recess 10E in the second portion 11C2B. Therefore, in regions with high luminous intensity, the length of the inner surface 10D of the semiconductor structure 10 in the first direction Z can be increased, and the light extraction efficiency from the first surface 11A can be improved by light reflection in the inner surface 10D. The difference between the distance between the first portion 11C2A and the first surface 11A in the first direction Z and the distance between the second portion 11C2B and the first surface 11A in the first direction Z is, for example, 0.5 μm or more and 1 μm or less. The distance between the first portion 11C2A and the first surface 11A in the first direction Z is, for example, 1.5 μm or more and 6 μm or less. The distance between the second part 11C2B in the first direction Z and the first surface 11A is, for example, more than 2 μm and less than 7 μm.

[0114] The first, second, and third variations can be combined in two or more to be implemented.

[0115] Furthermore, in this embodiment, when viewed from above, the second region 11C2 of the third surface 11C can also be located at the outer edge 10F of the semiconductor structure 10. Near the outer edge 10F of the semiconductor structure 10, which is furthest from the n-side electrode 21 in the extending direction of the third surface 11C, the luminous intensity tends to be low. By placing the second region 11C2 at such a low-intensity outer edge 10F, the light extraction efficiency from the first surface 11A can be improved near the outer edge 10F.

[0116] Hereinafter, other embodiments will be described focusing on the differences from the first embodiment described above. The matters described in the first embodiment also apply to other embodiments, provided they do not contradict the descriptions and drawings in other embodiments.

[0117] In other embodiments, the third surface 11C of the n-side semiconductor layer 11 also has a first region 11C1 and a second region 11C2 located in the first direction Z on the side closer to the first surface 11A than the first region 11C1. The n-side electrode 21 is electrically connected to the n-side semiconductor layer 11 in the first region 11C1.

[0118] [Second Implementation]

[0119] Figure 7 This is a schematic top view of the light-emitting element 2 according to the second embodiment.

[0120] The light-emitting element 2 of the second embodiment has a generally rectangular shape when viewed from above, which is longer in the second direction Y. When viewed from above, the light-emitting element 2 has a pair of short sides extending along the first direction X and a pair of long sides extending along the second direction Y and longer than the short sides. The light-emitting element 2 has two light-emitting portions 100, an n-side electrode 21, and two p-side electrodes 22 arranged in the second direction Y when viewed from above. When viewed from above, the third surface 11C and the n-side electrode 21 are located between the two light-emitting portions 100. The two p-side electrodes 22 are respectively disposed near both ends of the light-emitting element 2 in the second direction Y.

[0121] When viewed from above, the n-side conductive component 61 overlaps with the n-side electrode 21, and the two p-side conductive components 62 overlap with the p-side electrodes 22 respectively. In the second direction Y, the n-side conductive component 61 is located between the two p-side conductive components 62.

[0122] The first region 11C1 of the third surface 11C is located at the center of the light-emitting element 2 when viewed from above. When viewed from above, the second region 11C2 of the third surface 11C extends from the first region 11C1 toward a pair of long sides of the light-emitting element 2 along the first direction X.

[0123] [Third Implementation]

[0124] Figure 8 This is a schematic top view of the light-emitting element 3 according to the third embodiment.

[0125] The light-emitting element 3 of the third embodiment has a generally rectangular shape when viewed from above, with the latter being longer in the second direction Y. When viewed from above, the light-emitting element 3 has a pair of short sides extending along the first direction X and a pair of long sides extending along the second direction Y and longer than the short sides. When viewed from above, the light-emitting element 3 has six light-emitting portions 100 arranged in the first direction X and the second direction Y. Two light-emitting portions 100 are arranged in the first direction X, and three light-emitting portions 100 are arranged in the second direction Y. Furthermore, the light-emitting element 3 has one n-side electrode 21 and six p-side electrodes 22 corresponding to the six light-emitting portions 100.

[0126] When viewed from above, the third surface 11C is located between each of the light-emitting parts 100. The first region 11C1 of the third surface 11C is located in the center of the light-emitting element 3 when viewed from above, and an n-side electrode 21 is disposed in the first region 11C1 in the center.

[0127] Viewed from above, the third surface 11C extends from the central portion of the light-emitting element 3 toward a pair of short sides along the second direction Y. Furthermore, the third surface 11C has two extensions extending along the first direction X. Viewed from above, the extensions of the third surface 11C extending along the first direction X intersect with the extensions of the third surface 11C extending along the second direction Y in the region between the first region 11C1 of the central portion of the light-emitting element 3 and the short side of the light-emitting element 3.

[0128] The first region 11C1 is located at the intersection of the extensions of the third surface 11C. Two second regions 11C2, separated from each other along the first direction X, are arranged in the extension of the third surface 11C extending along the first direction X. Two second regions 11C2, separated from each other along the second direction Y, are arranged in the extension of the third surface 11C located between the intersection of the extensions of the third surface 11C and the short side of the light-emitting element 3.

[0129] Four of the six p-side electrodes 22 are respectively disposed near the corner of the light-emitting element 3 when viewed from above. In the first direction X, the n-side electrode 21 is disposed between the other two p-side electrodes 22.

[0130] When viewed from above, the n-side conductive component 61 overlaps with the n-side electrode 21, and the six p-side conductive components 62 overlap with the p-side electrode 22 respectively.

[0131] [Fourth Implementation]

[0132] Figure 9 This is a schematic top view of the light-emitting element 4 according to the fourth embodiment.

[0133] The shape of the light-emitting element 4 in the fourth embodiment when viewed from above is the same as that of the light-emitting element 3 in the third embodiment. It is a roughly rectangular shape that is longer in the second direction Y. When viewed from above, the light-emitting element 4 has six light-emitting portions 100 arranged in the first direction X and the second direction Y. In addition, the light-emitting element 4 has three n-side electrodes 21 and six p-side electrodes 22 corresponding to the six light-emitting portions 100.

[0134] When viewed from above, the third surface 11C is located between each light-emitting part 100. The first region 11C1 of the third surface 11C is located at the center of the light-emitting element 4 when viewed from above. Furthermore, when viewed from above, two first regions 11C1 are arranged in the second direction Y, sandwiching the first region 11C1 at the center. When viewed from above, three first regions 11C1 are arranged in the second direction Y. An n-side electrode 21 is disposed in each first region 11C1.

[0135] In a top view, the third surface 11C extends along the second direction Y, connecting the three first regions 11C1 and a pair of short sides of the light-emitting element 4. Furthermore, the third surface 11C has two extensions extending along the first direction X. In a top view, the extensions of the third surface 11C extending in the first direction X and the extensions of the third surface 11C extending in the second direction Y intersect between adjacent n-side electrodes 21 in the second direction Y.

[0136] The first region 11C1 is located at the intersection of the extension of the third surface 11C. Two second regions 11C2, which are separated from each other along the first direction X, are arranged in the extension of the third surface 11C extending along the first direction X.

[0137] Three n-side electrodes 21 are respectively located between two adjacent light-emitting portions 100 in the first direction X. The three n-side electrodes 21 are arranged in the second direction Y. By increasing the number of n-side electrodes 21, the unevenness of the current density distribution in each light-emitting portion 100 can be reduced compared to the light-emitting element 3 with one n-side electrode 21 in the third embodiment. As a result, the unevenness of the brightness distribution of the light-emitting element 4 can be reduced. The n-side conductive member 61 extends in the second direction Y in a manner that overlaps with the three n-side electrodes 21 arranged in the second direction Y.

[0138] The light-emitting element in the embodiment only needs to have two or more light-emitting parts 100, or it may have three, five or more light-emitting parts 100.

[0139] A light-emitting device is constructed by arranging the light-emitting elements of the embodiments described above on a wiring substrate. The n-side conductive member 61 and p-side conductive member 62 of the light-emitting element are connected to the wiring portion disposed on the upper surface of the wiring substrate, for example, via connecting members such as solder. The first surface 11A of the light-emitting element faces the opposite side to the element arrangement surface in the wiring substrate. Multiple light-emitting elements can be arranged on the wiring substrate. The light-emitting device, for example, has 10,000 to 30,000 light-emitting elements. The light-emitting device, for example, has 20,000 to 150,000 light-emitting portions 100.

[0140] exist Figure 1 In the illustrated embodiment, the n-side conductive member 61 overlaps with the first region 11C1 of the third surface 11C when viewed from above, but does not overlap with the second region 11C2. By overlapping the n-side conductive member 61 with the shallower portion of the recess 10E, namely the first region 11C1, the formation of steps on the upper surface of the n-side conductive member 61 can be reduced. Therefore, when the light-emitting element is placed on the wiring substrate, and when the n-side conductive member 61 is connected to the wiring portion, contact between the n-side conductive member 61 and the wiring portion is easier, thus improving reliability.

[0141] [Measurement Results]

[0142] The following describes the results of measuring the forward voltage and luminous intensity of the sample used to fabricate the light-emitting element.

[0143] Figure 11A This is a schematic top view of the semiconductor structure 10 in the first sample.

[0144] Figure 11BThis is a schematic top view of the semiconductor structure 10 in the second sample.

[0145] Figure 11C This is a schematic top view of the semiconductor structure 10 in the third sample.

[0146] Figure 11D This is a schematic top view of the semiconductor structure 10 in the fourth sample.

[0147] The configuration of the third surface 11C when viewed from above in the first to fourth samples is similar to... Figure 1 The light-emitting element 1 shown in the first embodiment is the same. In the first to fourth samples, the length and width (width in the direction orthogonal to the extension direction) of the extension portion of the third surface 11C are the same. In the first to fourth samples, the shape of the semiconductor structure 10 when viewed from above is a roughly square with one side of about 50 μm.

[0148] exist Figure 11A In the first sample shown, the third surface 11C does not include the second region 11C2, but is composed only of the first region 11C1. The depth of the first region 11C1 (the depth from the fourth surface 13A of the p-side semiconductor layer 13) is 1 μm. It should be noted that the depth of the first region 11C1 is also 1 μm in the second to fourth samples.

[0149] In the second to fourth samples, the extension of the third surface 11C includes a first region 11C1 and a second region 11C2. In the second to fourth samples, the depth of the second region 11C2 (the depth from the fourth surface 13A of the p-side semiconductor layer 13) is 2 μm. The proportion (area ratio) of the second region 11C2 in the extension of the third surface 11C in the second to fourth samples is different.

[0150] exist Figure 11B In the second sample shown, a second region 11C2 is disposed on the extension of each of the third surfaces 11C. In the second sample, the length of a second region 11C2 is approximately 18.0 μm.

[0151] exist Figure 11C In the third sample shown, two second regions 11C2, separated from each other along the extension direction of each extension, are arranged on the respective extension of the third surface 11C. In the third sample, the length of one second region 11C2 is approximately 7.7 μm.

[0152] exist Figure 11D In the fourth sample shown, four second regions 11C2, separated from each other along the extension direction of each extension, are arranged on the extension portion of the third surface 11C. In the fourth sample, the length of one second region 11C2 is approximately 2.6 μm.

[0153] Among the second to fourth samples, the proportion of the second region 11C2 in the extension of the third surface 11C is the largest in the second sample and the smallest in the fourth sample.

[0154] A forward current of 0.95 mA was passed through the first to fourth samples to induce them to emit light, and the forward voltage and luminescence intensity were measured respectively.

[0155] The forward voltage is the same in the first through fourth samples. The luminescence intensity of the second sample is 1.9% higher than that of the first sample. The luminescence intensity of the third sample is 1.8% higher than that of the first sample. The luminescence intensity of the fourth sample is 0.9% higher than that of the first sample. Therefore, by configuring the first region 11C1 and the second region 11C2 on the third surface 11C, the degradation of the forward voltage can be reduced and the light extraction efficiency can be improved. In addition, the larger the proportion of the second region 11C2, the higher the luminescence intensity.

[0156] [Manufacturing method of light-emitting element]

[0157] Next, refer to Figures 10A to 10T The manufacturing method of the light-emitting element as an embodiment will be described using the manufacturing method of the light-emitting element 1 of the first embodiment as an example.

[0158] The manufacturing method of the light-emitting element 1 can include the steps described below. It should be noted that the following figures illustrate the steps for forming one light-emitting element 1, but multiple light-emitting elements 1 can also be formed on the first substrate 201. When multiple light-emitting elements 1 are formed on the first substrate 201, the regions forming the multiple light-emitting elements 1 are arranged in the first direction X and the second direction Y.

[0159] like Figures 10A to 10C As shown, a semiconductor structure 10 is formed on a first substrate 201. Figure 10A This is a schematic top view of the semiconductor structure 10 as seen from the fourth surface 13A of the p-side semiconductor layer 13. Figure 10B yes Figure 10A A schematic cross-sectional view at the XB-XB line. Figure 10C yes Figure 10A A schematic cross-sectional view at the XC-XC line.

[0160] The semiconductor structure 10 has an n-side semiconductor layer 11, an active layer 12, and a p-side semiconductor layer 13. The n-side semiconductor layer 11 has a first surface 11A, a second surface 11B, and a third surface 11C. The semiconductor structure 10 has a plurality of light-emitting portions 100 separated from the third surface 11C.

[0161] For example, an n-side semiconductor layer 11, an active layer 12, and a p-side semiconductor layer 13 are sequentially formed on the first substrate 201 using MOCVD (Metal Organic Chemical Vapor Deposition). The first substrate 201 can be, for example, an insulating substrate such as sapphire or spinel (MgAl2O4) with any one of the C-side, R-side, or A-side as the main surface. Alternatively, conductive substrates such as SiC (including 6H, 4H, and 3C), ZnS, ZnO, GaAs, and Si can also be used as the first substrate 201.

[0162] After forming a semiconductor structure 10 on the first substrate 201, a portion of the p-side semiconductor layer 13, a portion of the active layer 12, and a portion of the n-side semiconductor layer 11 are removed, exposing a portion of the n-side semiconductor layer 11 to form a third surface 11C. The third surface 11C is located at the center of the region where the light-emitting element 1 is formed when viewed from above. Furthermore, the third surface 11C extends from the center in both the first direction X and the second direction Y. In the case where multiple light-emitting elements 1 are formed on the first substrate 201, the third surface 11C is continuous between regions where adjacent light-emitting elements 1 are formed. The p-side semiconductor layer 13, the active layer 12, and the n-side semiconductor layer 11 can be removed, for example, by a RIE (Reactive Ion Etching) method.

[0163] like Figure 10D As shown, a photoresist mask 400 is formed on the fourth surface 13A and the third surface 11C of the p-side semiconductor layer 13. The photoresist mask 400 has an opening 401 located on the extension of the third surface 11C. By using the RIE method with the photoresist mask 400, the n-side semiconductor layer 11 exposed at the opening 401 is removed.

[0164] Therefore, as Figure 10E schematic top view and Figure 10E As shown in the schematic cross-sectional view along the XF-XF line, a first region 11C1 is formed on the third surface 11C, and a second region 11C2 is located on the side of the first surface 11A closer to the first region 11C1 in the first direction Z. The second region 11C2 is formed in the portion where the opening 401 of the resist mask 400 is located. A step is formed between the first region 11C1 and the second region 11C2.

[0165] Regarding subsequent procedures, the use of... Figure 10E The cross-sectional view corresponding to the XX line is explained.

[0166] like Figure 10GAs shown, a transparent electrode 31 is formed on the fourth surface 13A of the p-side semiconductor layer 13. The transparent electrode 31 can be formed, for example, by sputtering, vapor deposition, or other methods. Furthermore, a p-side electrode 22 is formed on the transparent electrode 31, and an n-side electrode 21 is formed on the first region 11C1 of the third surface 11C. The p-side electrode 22 and the n-side electrode 21 can be formed, for example, by sputtering, vapor deposition, CVD (Chemical Vapor Deposition), or other methods.

[0167] After forming the p-side electrode 22 and the n-side electrode 21, as Figure 10H As shown, a first insulating film 33 is formed. The first insulating film 33 covers the third surface 11C, the fourth surface 13A, the side surface of the light-emitting part 100, the light-transmitting electrode 31, the n-side electrode 21, and the p-side electrode 22. The first insulating film 33 can be formed, for example, by sputtering, vapor deposition, CVD, ALD (Atomic Layer Deposition), or other methods.

[0168] After the first insulating film 33 is formed, as Figure 10I As shown, a trench 300 is formed in the semiconductor structure 10. For example, the trench 300 is formed by etching the semiconductor structure 10 from the p-side semiconductor layer 13 side using the RIE method. The trench 300 does not reach the first surface 11A. The n-side semiconductor layer 11 remains between the trench 300 and the first substrate 201.

[0169] After forming groove 300, as Figure 10J As shown, a metal film 34 is formed on the first insulating film 33. The metal film 34 can be formed by methods such as sputtering, vapor deposition, and CVD.

[0170] After the metal film 34 is formed, as Figure 10K As shown, a first opening 33a and a second opening 33b are formed in the first insulating film 33. In the first opening 33a, the n-side electrode 21 is exposed from the first insulating film 33, and in the second opening 33b, the p-side electrode 22 is exposed from the first insulating film 33. The first opening 33a and the second opening 33b can be formed, for example, by the RIE method.

[0171] After the first opening 33a and the second opening 33b are formed, as Figure 10L As shown, a second insulating film 41 is formed. The second insulating film 41 covers the aforementioned... Figure 10K The structure shown is shown. Additionally, a second insulating film 41 is formed within the groove 300. The second insulating film 41 can be formed, for example, by sputtering, vapor deposition, CVD, ALD, or other methods.

[0172] A third opening 41a and a fourth opening 41b are formed on the second insulating film 41, for example, by means of a RIE method. The third opening 41a is formed in the region of the first insulating film 33 that overlaps with the first opening 33a. The fourth opening 41b is formed in the region of the first insulating film 33 that overlaps with the second opening 33b.

[0173] After the second insulating film 41 is formed, as Figure 10M As shown, an n-side conductive component 61 and a p-side conductive component 62 are formed on the second insulating film 41. The n-side conductive component 61 is electrically connected to the n-side electrode 21 at the third opening 41a and the first opening 33a. The p-side conductive component 62 is electrically connected to the p-side electrode 22 at the fourth opening 41b and the second opening 33b. The n-side conductive component 61 and the p-side conductive component 62 can be formed, for example, by sputtering, vapor deposition, or the like.

[0174] After forming the n-side conductive component 61 and the p-side conductive component 62, as Figure 10N As shown, the semiconductor structure 10 and the second substrate 202 are bonded via a resin component 210. For example, the resin component 210 is formed to cover the second insulating film 41, the n-side conductive component 61, and the p-side conductive component 62. Then, the second substrate 202 is disposed on the resin component 210, and the second substrate 202 is pressed against the first substrate 201, thereby bonding the semiconductor structure 10 to the second substrate 202 via the resin component 210. The same material as the first substrate 201 can be used as the material for the second substrate 202. The resin component 210 covers the n-side conductive component 61, the p-side conductive component 62, and the second insulating film 41, and fills the groove 300. For example, epoxy resin, acrylic resin, or polyimide resin can be used as the material for the resin component 210.

[0175] After bonding the semiconductor structure 10 to the second substrate 202, the first substrate 201 is removed. Thus, as... Figure 10O As shown, the first surface 11A of the n-side semiconductor layer 11 is exposed. The first substrate 201 can be removed, for example, by methods such as LLO (Laser Lift Off), grinding, polishing, or etching.

[0176] After removing the first substrate 201, a portion of the n-side semiconductor layer 11 is removed from the first surface 11A side, separating the semiconductor structure 10 into multiple parts. At this time, the n-side semiconductor layer 11 is removed such that it reaches the surface of the n-side semiconductor layer 11 at the bottom of the defined trench 300. Thus, as... Figure 10PAs shown, the semiconductor structure 10 is separated into multiple parts by the trench 300. Additionally, at the location of the trench 300, the upper surface 210A of the resin component 210 is exposed. The n-side semiconductor layer 11 can be removed, for example, by etching using CMP (Chemical Mechanical Polishing), RIE, or similar methods.

[0177] After separating the semiconductor structure 10 into multiple parts, such as Figure 10Q As shown, a first protective film 32 is formed on the first surface 11A and the upper surface 210A of the resin component 210. For example, after the first protective film 32 is formed on the entire surface of the first surface 11A by sputtering or CVD, an opening 32a is formed in the area roughened in the following process by using a photoresist mask RIE method.

[0178] After the first protective film 32 is formed, as Figure 10R As shown, the inner region 11A1 exposed from the first protective film 32 in the first surface 11A is roughened. For example, the inner region 11A1 is roughened by wet etching with an alkaline solution such as TMAH (Tetramethylammonium hydroxide) or by RIE using a chlorine-containing gas.

[0179] After roughening the inner region 11A1, as follows Figure 10S As shown, a second protective film 51 covers the first surface 11A. The second protective film 51 is formed on the first surface 11A in such a way that it covers the first protective film 32. The second protective film 51 can be formed by sputtering or CVD.

[0180] After the second protective film 51 is formed, the first protective film 32 and the second protective film 51 located on the upper surface 210A of the resin component 210 are removed, exposing the upper surface 210A of the resin component 210. Then, the resin component 210 is removed from the upper surface 210A side. The resin component 210 can be removed, for example, by etching. Thus, as... Figure 10T As shown, the resin component 210 remains between the second substrate 202 and the semiconductor structure 10, resulting in a light-emitting element 1 supported on the second substrate 202 via the resin component 210. When multiple light-emitting elements 1 are disposed on the second substrate 202, a light-emitting element 1 that is spatially separated from adjacent light-emitting elements is obtained.

[0181] For example, by irradiating the resin component 210 with a laser from the second substrate 202 side, the resin component 210 between the second substrate 202 and the semiconductor structure 10 can be removed, and the light-emitting element 1 can be separated from the second substrate 202. The n-side conductive component 61 and the p-side conductive component 62 in the light-emitting element 1 separated from the second substrate 202 function as external connection terminals for bonding with the wiring substrate.

[0182] After the light-emitting element 1 is disposed on the wiring substrate, a cover member containing a light-reflective material can be used to cover the side of the light-emitting element 1, for example. Furthermore, the cover member can be formed between the light-emitting element 1 and the wiring substrate. When the light-emitting element 1 is disposed on the wiring substrate, the distance between the second region 11C2 of the third surface 11C and the wiring substrate is greater than the distance between the first region 11C1 and the wiring substrate. When viewed from above, if the second region 11C2 of the third surface 11C is located at the outer edge 10F of the semiconductor structure 10, the cover member can easily enter between the light-emitting element 1 and the wiring substrate.

[0183] Embodiments of the present invention may include the following light-emitting elements.

[0184] [Item 1]

[0185] A light-emitting element comprising: a semiconductor structure having: an n-side semiconductor layer having a first surface, a plurality of second surfaces located opposite to the first surface in a first direction, and a third surface located opposite to the first surface in the first direction; a plurality of light-emitting portions having an active layer and a p-side semiconductor layer respectively disposed on the plurality of second surfaces, the third surface being located between the plurality of light-emitting portions in a top view and exposed from the active layer and the p-side semiconductor layer; an n-side electrode disposed on the third surface and electrically connected to the n-side semiconductor layer; and a p-side electrode disposed on the p-side semiconductor layer of the plurality of light-emitting portions and electrically connected to the p-side semiconductor layer, the third surface having: a first region; and a second region located in the first direction at a position closer to the first surface than the first region, the n-side electrode being electrically connected to the n-side semiconductor layer in the first region.

[0186] [2] The light-emitting element according to claim 1, wherein, when viewed from above, the third surface extends in a direction from the n-side electrode toward the outer edge of the semiconductor structure.

[0187] [3] The light-emitting element according to item 2, wherein the second region has: a first portion located near the n-side electrode in the extension direction of the third surface; and a second portion located further away from the n-side electrode than the first portion in the extension direction of the third surface, wherein the width of the first portion in the direction orthogonal to the extension direction of the third surface is greater than the width of the second portion in the direction orthogonal to the extension direction of the third surface.

[0188] [4] The light-emitting element according to item 2 or 3, wherein the length of the first portion in the extension direction of the third surface is greater than the length of the second portion in the extension direction of the third surface.

[0189] [5] The light-emitting element according to any one of items 2 to 4, wherein the distance between the first portion in the first direction and the first surface is smaller than the distance between the second portion in the first direction and the first surface.

[0190] [6] The light-emitting element according to any one of items 2 to 5, wherein, when viewed from above, the second region is located at the outer edge of the semiconductor structure.

[0191] [7] The light-emitting element according to any one of items 2 to 6, wherein the width of the second region in the direction orthogonal to the extension direction of the third surface is 50% or more and 100% or less of the width of the first region in the direction orthogonal to the extension direction of the third surface.

[0192] [8] The light-emitting element according to any one of items 1 to 7, wherein it further comprises an n-side conductive member electrically connected to the n-side electrode, wherein, when viewed from above, the n-side conductive member overlaps with the first region but does not overlap with the second region.

[0193] The embodiments of this disclosure have been described above with reference to specific examples. However, this disclosure is not limited to these specific examples. Based on the above embodiments of this disclosure, all methods that can be implemented by appropriate design changes by those skilled in the art, as long as they contain the spirit of this disclosure, fall within the scope of this disclosure. In addition, within the scope of the spirit of this disclosure, those skilled in the art can conceive of various modifications and alterations, which also fall within the scope of this disclosure.

[0194] Explanation of reference numerals in the attached figures

[0195] 1-4: Light-emitting elements

[0196] 10: Semiconductor Structure

[0197] 10C: Outer surface

[0198] 10D: Inner side

[0199] 10E: Concave

[0200] 10F: Outer edge

[0201] 11: n-side semiconductor layer

[0202] 11A: First page

[0203] 11A1: Inner region

[0204] 11A2: Outer region

[0205] 11B: Second Page

[0206] 11C: Third face

[0207] 11C1: Area 1

[0208] 11C2: Second Zone

[0209] 11C2A: Part 1

[0210] 11C2B: Part Two

[0211] 12: Active layer

[0212] 13: p-side semiconductor layer

[0213] 13A: Fourth Page

[0214] 21: n-side electrode

[0215] 22: p-side electrode

[0216] 31: Transparent electrode

[0217] 32: First protective film

[0218] 33: First insulating film

[0219] 34: Metal film

[0220] 41: Second insulating film

[0221] 51: Second protective film

[0222] 61: n-side conductive component

[0223] 62: p-side conductive component

[0224] 100: Light-emitting part

[0225] 100A: First light-emitting part

[0226] 100B: Second Light-Emitting Section

[0227] 100C: Third light-emitting part

[0228] 100D: Fourth Light-Emitting Unit

[0229] 201: First substrate

[0230] 202: Second substrate

[0231] 210: Resin Components

[0232] 300: Slot

[0233] 400: Resist mask.

Claims

1. A light-emitting element, comprising: A semiconductor structure having: an n-sided semiconductor layer having a first surface, a plurality of second surfaces located on the opposite side of the first surface in a first direction, and a third surface located on the opposite side of the first surface in the first direction; A plurality of light-emitting portions having an active layer and a p-side semiconductor layer respectively disposed on the plurality of second surfaces, the third surface being located between the plurality of light-emitting portions when viewed from above, and exposed from the active layer and the p-side semiconductor layer; The n-side electrode is disposed on the third surface and is electrically connected to the n-side semiconductor layer; as well as p-side electrodes are respectively disposed on the p-side semiconductor layer of the plurality of light-emitting portions and are electrically connected to the p-side semiconductor layer. The third surface has: a first region; The second region is located in the first direction at a position closer to the first surface than the first region. The n-side electrode is electrically connected to the n-side semiconductor layer in the first region.

2. The light-emitting element according to claim 1, When viewed from above, the third surface extends in a direction from the n-side electrode toward the outer edge of the semiconductor structure.

3. The light-emitting element according to claim 2, The second region has: a first portion located close to the n-side electrode in the extension direction of the third surface; and a second portion located further away from the n-side electrode than the first portion in the extension direction of the third surface. The width of the first portion in the direction orthogonal to the extension direction of the third surface is greater than the width of the second portion in the direction orthogonal to the extension direction of the third surface.

4. The light-emitting element according to claim 2 or 3, The length of the first part in the extension direction of the third surface is greater than the length of the second part in the extension direction of the third surface.

5. The light-emitting element according to claim 2 or 3, The distance between the first portion in the first direction and the first surface is smaller than the distance between the second portion in the first direction and the first surface.

6. The light-emitting element according to claim 2 or 3, When viewed from above, the second region is located at the outer edge of the semiconductor structure.

7. The light-emitting element according to claim 2 or 3, The width of the second region in the direction orthogonal to the extension direction of the third surface is more than 50% and less than 100% of the width of the first region in the direction orthogonal to the extension direction of the third surface.

8. The light-emitting element according to any one of claims 1 to 3, It also includes an n-side conductive component that is electrically connected to the n-side electrodes. When viewed from above, the n-side conductive component overlaps with the first region but not with the second region.

Images