Display device

Abstract

This application relates to a display device. A display device according to an example embodiment of this application includes: a substrate; a light-emitting element disposed on the substrate; and a common connection electrode disposed on the substrate and in contact with the light-emitting element, wherein the light-emitting element includes: a first electrode disposed on the substrate; a light-emitting layer disposed on the first electrode; a second electrode disposed on the light-emitting layer; and a passivation film disposed on a side surface of the light-emitting layer, and a portion of the first electrode is disposed on the outer surface of the passivation film.

Description

Technical Field

[0001] This application relates to display devices, and more specifically, for example, but not limited to, display devices having smooth electrical connections to light-emitting diode (LED) elements. Background Technology

[0002] With the development of the information society, the demand for display devices for displaying images is increasing, and various types of display devices are being used, such as liquid crystal display (LCD) devices and organic light-emitting diode (OLED) display devices.

[0003] Among display devices, OLED displays offer the following advantages: as a self-emissive type, they have a wider viewing angle and higher contrast ratio, and can be lighter and thinner than LCD devices, while also consuming less power because they do not require a separate backlight. Furthermore, OLED displays can be driven at low voltages, have fast response times, and are particularly inexpensive to manufacture.

[0004] The descriptions provided in the discussion of the Related Art section should not be considered prior art solely because they are mentioned in or associated with that section. The discussion of the Related Art section may include information describing one or more aspects of the subject art, and the descriptions in that section do not limit this disclosure. Summary of the Invention

[0005] The inventors have recognized that, in the related art, OLED display devices using organic materials are prone to defective pixels, such as oxidation between the organic light-emitting layer and the electrodes due to moisture and oxygen penetration. Therefore, various technical configurations are needed to minimize or at least reduce this penetration.

[0006] To address the aforementioned issues, recent research and development have focused on display devices using light-emitting diodes (LEDs), which employ inorganic materials as light-emitting elements. These LED-based display devices are attracting attention as next-generation display devices due to their high image quality and high reliability.

[0007] This application relates to a display device having a smooth electrical connection to a light-emitting diode (LED) element.

[0008] This application also relates to a display device that has improved stability during contact with LED elements.

[0009] This application also relates to a display device with improved light extraction efficiency.

[0010] This application also relates to a display device that prevents or at least reduces short circuits between the connecting electrodes and the active layer.

[0011] This application also relates to a display device in which process efficiency is improved and process cost is reduced by separating the transfer process from the electrode connection process.

[0012] The purpose of this application is not limited to the above-described objectives, and other technical objectives can be deduced from the following embodiments. Furthermore, it will be readily understood that the purposes and advantages of this disclosure can be achieved using the apparatus or combinations thereof shown in the claims.

[0013] According to an example embodiment of this application, a display device is provided, the display device comprising: a substrate; a light-emitting element disposed on the substrate; and a common connection electrode disposed on the substrate and in contact with the light-emitting element, wherein the light-emitting element comprises: a first electrode disposed on the substrate; a light-emitting layer disposed on the first electrode; a second electrode disposed on the light-emitting layer; and a passivation film disposed on a side surface of the light-emitting layer, and a portion of the first electrode being disposed on the outer surface of the passivation film.

[0014] According to another exemplary embodiment of this application, a display device is provided, the display device comprising: a substrate; an adhesive layer disposed on the substrate; a light-emitting element disposed on the adhesive layer, wherein the light-emitting element comprises: a first electrode disposed on the adhesive layer; a light-emitting layer disposed on the first electrode; a second electrode disposed on the light-emitting layer; and a passivation film disposed on a side surface of the light-emitting layer, wherein the upper surface and the side surface of the second electrode can be exposed.

[0015] Details of other exemplary implementations are included in the detailed description and accompanying drawings.

[0016] According to various exemplary embodiments of this application, a display device having a smooth electrical connection with LED elements can be provided.

[0017] According to various exemplary embodiments of this application, stability during the contact process with LED elements can be improved.

[0018] According to various exemplary embodiments of this application, light extraction efficiency can be improved.

[0019] According to various exemplary embodiments of this application, short circuits between the connecting electrode and the active layer can be prevented or at least reduced.

[0020] According to various exemplary embodiments of this application, separating the transfer process from the electrode connection process can improve process efficiency and reduce process costs.

[0021] According to various exemplary embodiments of this application, process efficiency can be improved and process costs can be reduced, thereby reducing the production energy of display devices.

[0022] However, the effects that can be obtained from this application are not limited to those described above, and based on the following description, those skilled in the art to which this application pertains will be able to clearly understand other effects not described.

[0023] It should be understood that both the foregoing general description of this disclosure and the following detailed description are exemplary and explanatory, and are intended to provide further explanation of the claimed disclosure. Attached Figure Description

[0024] The accompanying drawings are included to provide a further understanding of this disclosure and can be incorporated into and form part of this application, illustrating embodiments of the disclosure and serving, together with the specification, to explain the principles of the disclosure. In the drawings: Figure 1 This is a plan view of a display device according to an example implementation.

[0025] Figure 2 This is a view showing the cross-sectional structure of a subpixel according to an example implementation.

[0026] Figure 3 yes Figure 2 A magnified view of region Q1 in the image.

[0027] Figures 4 to 12 This is a view illustrating each operation of the manufacturing process of a display device according to an example embodiment.

[0028] Figure 13 This is a cross-sectional view of a display device according to another example embodiment.

[0029] Figure 14 This is a cross-sectional view of a display device according to yet another exemplary embodiment.

[0030] Throughout the accompanying drawings and detailed embodiments, unless otherwise described, the same reference numerals should be understood to refer to the same elements, features, and structures. For clarity, illustration, and convenience, the relative dimensions and depictions of these elements may be exaggerated.

[0031] Explanation of reference numerals in the attached figures

[0032] 10: Display device

[0033] 110: Substrate

[0034] TR: Transistor

[0035] 140: First planarization layer

[0036] 180: Adhesive layer

[0037] LD: Light-emitting element

[0038] 210: First electrode

[0039] 222: Active Layer

[0040] 221: First semiconductor layer

[0041] 220: Emissive layer

[0042] 223: Second semiconductor layer

[0043] 230: Second electrode

[0044] 240: Passivation film

[0045] 190: First insulating layer

[0046] 200: Second insulating layer

[0047] TH: Through hole

[0048] OP: Opening Detailed Implementation

[0049] Reference will now be made in detail to embodiments of this disclosure, examples of which are illustrated in the accompanying drawings. The described progression of processing steps and / or operations is exemplary; however, the order of steps and / or operations is not limited to the order set forth herein and can be varied as is known in the art, except for steps and / or operations that must occur in a specific order. The names of corresponding elements used in the following description may be chosen solely for ease of writing and therefore may differ from the names used in actual products.

[0050] In the following description, embodiments will be described with reference to the accompanying drawings. In the specification, when a component (or area, layer, part, etc.) is described as being "on" another component, "connected" or "attached" to another component, it means that a component can be directly connected / attached to another component, or that another component can be disposed between them.

[0051] The same reference numerals denote the same parts. Furthermore, in the drawings, the thickness, scale, and dimensions of parts are exaggerated for effective description of the technical content. The term "and / or" includes all one or more combinations that can be defined by the associated configuration.

[0052] Terms such as “first,” “second,” “A,” “B,” “(A),” or “(B)” can be used to describe various components, but these components are not limited by these terms. These terms are used only for the purpose of distinguishing one component from another. For example, without departing from the scope of the various exemplary embodiments, a first component may be referred to as a second component, and similarly, a second component may be referred to as a first component. Unless the context clearly specifies otherwise, the singular includes the plural.

[0053] Terms such as "below," "on the lower side," "above," and "on the upper side" are used to describe the relationships between the components shown in the accompanying drawings. These terms are relative concepts and are described relative to the directions indicated by the markings in the drawings.

[0054] When positional relationships are described as "on top of," "above," "above," "upper part of," "below," "below," and "beside," one or more parts can be positioned between two other parts, unless "only" or "directly" is used, meaning one or more other parts can be positioned between two parts. For example, in the case where an element or layer is positioned "on" another element or layer, a third layer or element can be inserted between them.

[0055] In descriptions of temporal relationships, such as temporal precedents between two events such as “after,” “following,” or “before,” unless there is no indication of “directly after,” “directly following,” or “directly before,” another event may occur between the two events.

[0056] It should be understood that terms such as “comprising,” “having,” “including,” “constituting,” “composed of,” “formed from,” etc. are intended to specify the presence of features, quantities, steps, operations, components, parts, or combinations thereof described in the specification, and do not exclude the possibility of the presence or addition of one or more other features, quantities, steps, operations, components, parts, or combinations thereof.

[0057] Unless otherwise defined, all terms used herein (including technical and scientific terms) shall have the same meaning as commonly understood by one of ordinary skill in the art to which the exemplary embodiments pertain. It will also be understood that terms (such as those defined in common dictionaries) shall be interpreted as having a meaning consistent, for example, with their meaning in the context of the relevant field, and shall not be interpreted in an idealized or overly formal sense unless expressly defined herein. For example, the terms “part” or “unit” may be applied, for example, to a single circuit or structure, an integrated circuit, a computational block of a circuit device, or any structure configured to perform the described functions, as would be understood by one of ordinary skill in the art.

[0058] Features of the various embodiments of this disclosure can be combined partially or completely with each other, and can be technically related to or operate together with each other. Embodiments can be implemented independently of each other, or can be implemented together in an associated relationship.

[0059] Figure 1 This is a plan view of a display device according to an example implementation.

[0060] Reference Figure 1 The display device 10 according to one example embodiment of this application can be applied to TVs, signs, mobile terminals such as cellular phones or smartphones, computer monitors such as laptops or desktop computers, head-up displays (HUDs) for vehicles, display backlight units, virtual reality (VR), augmented reality (AR), or mixed reality (MR) displays, etc. However, even when developing new product types in the future, the configuration according to the embodiments described herein can be applied in the same way to any display device.

[0061] The display device 10 may use miniature light-emitting diodes (LEDs) as display elements, but is not limited to this.

[0062] The display device 10 may include a flexible display fabricated on a thin, flexible substrate. The flexible display can retain the characteristics of a conventional flat panel display and can be bent or rolled up like paper.

[0063] The display device 10 may include a display area DA having a plurality of pixels PX and a non-display area NDA where no image is displayed. The display device 10 may include a substrate 110 providing space in which the plurality of pixels PX can be disposed.

[0064] The display area DA can display images, videos, pictures, etc., and includes multiple pixels (PX). The non-display area NDA does not display any content and can also be referred to as the edge area or border area. The non-display area NDA can be located outside the display area DA, but is not limited to this. The non-display area NDA can be located around the display area DA, but is not limited to this. The non-display area NDA can be set to surround the display area DA, but is not limited to this.

[0065] The non-display area NDA can be defined as the area on the substrate 110 other than the display area DA, and can have a relatively narrow width (or size) compared to the display area DA, but is not limited thereto.

[0066] Pixel PX can be composed of multiple sub-pixels. For example, pixel PX can be composed of multiple sub-pixels SP1, SP2, and SP3, and sub-pixels SP1, SP2, and SP3 can emit red light, blue light, and green light, respectively. However, various embodiments of this application are not limited to this, and pixel PX can also include sub-pixels that emit white light, etc. In another exemplary embodiment, sub-pixels SP1, SP2, and SP3 can emit cyan light, magenta light, and yellow light, respectively. Sub-pixels SP1, SP2, and SP3 can be sequentially arranged on the first direction DR1. However, various embodiments of this application are not limited to this.

[0067] Pixel PX can be repeatedly set in the first direction DR1 and the second direction DR2. Specifically, each of sub-pixels SP1, SP2, and SP3 can be alternately set in the first direction DR1. Each of sub-pixels SP1, SP2, and SP3 can be repeatedly set in the second direction DR2.

[0068] The display device 10 may further include a gate line GL and a data line DL electrically connected to the sub-pixels SP1, SP2, and SP3 of each pixel PX. The gate line GL and the data line DL can provide the necessary signals to the sub-pixels SP1, SP2, and SP3 of each pixel PX.

[0069] The gate line GL can extend in the first direction DR1 and can be repeatedly set in the second direction DR2. The data line DL can extend in the second direction DR2, which is different from the first direction DR1, and can be repeatedly set in the first direction DR1. The gate line GL and the data line DL can intersect each other. However, the various embodiments of this application are not limited thereto.

[0070] The substrate 110 is an array substrate on which transistors are formed, and may be made of plastic or glass materials, but is not limited thereto.

[0071] The substrate 110 may be made of a flexible polymer film. For example, the flexible polymer film may be made of any of the following: polyethylene terephthalate (PET), polycarbonate (PC), acrylonitrile-butadiene-styrene copolymer (ABS), polymethyl methacrylate (PMMA), polyethylene naphthalate (PEN), polyethersulfone (PES), cyclic olefin copolymer (COC), triacetyl cellulose (TAC) film, polyvinyl alcohol (PVA) film, polyimide (PI) film, and polystyrene (PS), these are merely examples and are not necessarily limited thereto.

[0072] In one example, substrate 110 may comprise an opaque or colored polyimide material. In this case, display device 10 may also include a backplate coupled to the rear surface of substrate 110 to maintain substrate 110 in a flat surface state.

[0073] In one example, the backsheet may include a plastic material, such as polyethylene terephthalate.

[0074] In one example, substrate 110 may be a glass substrate. For example, glass substrate 110 may be a thin glass substrate with a thickness of 100 μm or less, and may have flexible properties.

[0075] Furthermore, substrate 110 can be formed by bonding two or more substrates or dividing it into two or more layers.

[0076] Figure 2 This is a view showing the cross-sectional structure of a subpixel according to an example implementation. Figure 3 yes Figure 2 A magnified view of region Q1 in the image.

[0077] Reference Figure 2 and Figure 3 The display device 10 may further include a transistor TR and a light-emitting element LD disposed on the substrate 110. Furthermore, the display device 10 may also include a wire electrically connecting the transistor TR to the light-emitting element LD, and at least one insulating layer disposed between the components. For example, at least one insulating layer may be disposed on or above the substrate 110.

[0078] A buffer layer 120 may be disposed on the substrate 110. The buffer layer 120 may minimize or at least reduce the diffusion of moisture or impurities from the substrate 110. The buffer layer 120 may be made of silicon oxide (SiOx), silicon nitride (SiNx), etc. The buffer layer 120 may be formed as a single layer or multiple layers of silicon oxide (SiOx), silicon nitride (SiNx), etc., but is not limited thereto.

[0079] The transistor TR can be disposed on the buffer layer 120. The transistor TR can be used as a driving element for a light-emitting diode (LD). The transistor TR can be a driving transistor, but is not limited to this.

[0080] The transistor TR can be a thin-film transistor (TFT), an N-channel metal-oxide-semiconductor (NMOS), a P-channel metal-oxide-semiconductor (PMOS), a complementary metal-oxide-semiconductor (CMOS), a field-effect transistor (FET), etc., but is not limited to these.

[0081] Assuming that the multiple transistors TR are thin-film transistors, the following description will be provided, but various embodiments of this application are not limited thereto.

[0082] Each of the multiple transistors TR includes a gate electrode GE, an active layer SCL, a source electrode SE, and a drain electrode DE.

[0083] The gate electrode GE is disposed on the buffer layer 120. For example, the gate electrode GE can be patterned and disposed on the buffer layer 120. The gate electrode GE can be made of a conductive material, such as copper (Cu), aluminum (Al), molybdenum (Mo), titanium (Ti), or alloys thereof, but is not limited thereto.

[0084] A gate insulating layer 130 is disposed on the gate electrode GE. The gate insulating layer 130 may be disposed between the gate electrode GE and the active layer SCL. The gate insulating layer 130 can insulate the gate electrode GE from the active layer SCL and may be made of an insulating material. For example, the gate insulating layer 130 may be formed as a single layer or multiple layers of silicon oxide (SiOx), silicon nitride (SiNx), etc., but is not limited thereto.

[0085] The active layer SCL is disposed on the gate insulating layer 130. For example, the active layer SCL can be made of oxide semiconductor, amorphous silicon, polycrystalline silicon, etc., but is not limited to these.

[0086] The source electrode SE and drain electrode DE are positioned spaced apart from each other on the active layer SCL. The source electrode SE and drain electrode DE can be electrically connected to the active layer SCL. The source electrode SE and drain electrode DE can be made of conductive materials, such as copper (Cu), aluminum (Al), molybdenum (Mo), titanium (Ti), or alloys thereof, but are not limited thereto.

[0087] In all aspects of this disclosure, for ease of description, the source electrode and the drain electrode are distinguished from each other. However, the source electrode and the drain electrode can be used interchangeably. A source electrode can be a drain electrode, and a drain electrode can be a source electrode. Furthermore, a source electrode in any aspect of this disclosure can be a drain electrode in another aspect of this disclosure, and a drain electrode in any aspect of this disclosure can be a source electrode in another aspect of this disclosure.

[0088] exist Figure 2 In the diagram, the gate electrode GE is shown positioned below the active layer SCL, but is not limited thereto. For example, in... Figure 2 In this diagram, the active layer SCL is shown disposed between the source electrode SE and the drain electrode DE and the gate electrode GE, but is not limited thereto. For example, the active layer SCL and the gate insulating layer 130 are shown disposed between the source electrode SE and the drain electrode DE and the gate electrode GE, but are not limited thereto.

[0089] For example, the gate electrode GE can also be positioned above the active layer SCL. In this case, the gate electrode GE can be positioned between the source electrode SE and the drain electrode DE and the active layer SCL.

[0090] The first planarization layer 140 can be disposed on the transistor TR. The first planarization layer 140 can planarize the upper part of the substrate 110 including a plurality of transistor TRs.

[0091] The first planarization layer 140 may be formed of a single layer or multiple layers and may be made of an organic material. For example, the first planarization layer 140 may be made of an acrylic-based organic material, but is not limited thereto. The first planarization layer 140 includes contact holes for electrically connecting the transistor TR to the first connection electrode 151.

[0092] The first planarization layer 140 may be formed from one or more materials selected from acrylic resin, epoxy resin, phenolic resin, polyamide resin, unsaturated polyester resin, polyphenylene resin, polyphenylene sulfide resin and benzocyclobutene, but the embodiments are not limited thereto.

[0093] Although not shown, a protective layer may be further disposed between the first planarization layer 140 and the transistor TR to protect the underlying components.

[0094] The first connecting electrode 151 and the second connecting electrode 155 can be disposed on the first planarization layer 140.

[0095] The first connecting electrode 151 and the second connecting electrode 155 may be disposed on the same layer and made of the same material, but are not limited thereto. For example, the first connecting electrode 151 and the second connecting electrode 155 may be made of different materials. The first connecting electrode 151 and the second connecting electrode 155 may be disposed on the first planarization layer 140 and made of a metallic material. For example, the first connecting electrode 151 and the second connecting electrode 155 may include a light-reflecting conductive material, and the light-reflecting conductive material may include at least one selected from aluminum (Al), silver (Ag), gold (Au), platinum (Pt), copper (Cu), etc.

[0096] The first connection electrode 151 may overlap with the transistor TR. The first connection electrode 151 may be electrically connected to and in contact with the drain electrode DE of the transistor TR through a contact hole passing through the first planarization layer 140 in the thickness direction (third direction DR3).

[0097] Although not shown, the second connection electrode 155 can be electrically connected to the common power terminal (high potential voltage terminal) and can receive and transmit common power.

[0098] The second planarization layer 160 may be disposed on the first connecting electrode 151 and the second connecting electrode 155. The second planarization layer 160 may be configured to cover the first connecting electrode 151 and the second connecting electrode 155. The second planarization layer 160 may be made of an organic material. For example, the second planarization layer 160 may be made of an acrylic-based organic material, but is not limited thereto. The second planarization layer 160 may be made of the same material as the first planarization layer 140, but is not limited thereto.

[0099] The third connecting electrode 171 and the fourth connecting electrode 175 may be disposed on the second planarization layer 160. The third connecting electrode 171 and the fourth connecting electrode 175 may be configured to cover the second planarization layer 160. The third connecting electrode 171 and the fourth connecting electrode 175 may include, but are not limited to, the same material as the first connecting electrode 151 and the second connecting electrode 155.

[0100] The third connecting electrode 171 may overlap with the first connecting electrode 151. The third connecting electrode 171 may be electrically connected to and in contact with the first connecting electrode 151 through a contact hole passing through the second planarization layer 160 in the thickness direction (third direction DR3).

[0101] The fourth connecting electrode 175 may overlap with the second connecting electrode 155. The fourth connecting electrode 175 may be electrically connected to and in contact with the second connecting electrode 155 through a contact hole passing through the second planarization layer 160 in the thickness direction (third direction DR3).

[0102] The adhesive layer 180 can be disposed on the third connecting electrode 171 and the fourth connecting electrode 175. The adhesive layer 180 can be disposed over the entire area of ​​the second planarization layer 160, while covering the third connecting electrode 171 and the fourth connecting electrode 175.

[0103] The adhesive layer 180 can fix the light-emitting element LD disposed on the adhesive layer 180. The adhesive layer 180 can be formed of an organic insulating layer. The adhesive layer 180 can be made of a photocurable adhesive material that can be cured by light. For example, the adhesive layer 180 can be made of an acrylic-based material containing a photosensitizer, but is not limited thereto.

[0104] The light-emitting element (LD) can be disposed on the adhesive layer 180. The light-emitting element (LD) can be an LED or a micro LED, but is not limited to this. The light-emitting element (LD) can have a vertical structure, but is not limited to this.

[0105] The light-emitting element (LD) may include a first electrode 210, a light-emitting layer 220, a second electrode 230, and a passivation film 240. The light-emitting layer 220 may include a first semiconductor layer 221, an active layer 222, and a second semiconductor layer 223. When the light-emitting element LD has a vertical structure, the first electrode 210, the first semiconductor layer 221, the active layer 222, the second semiconductor layer 223, and the second electrode 230 may overlap in the thickness direction (third direction DR3). For example, the first electrode 210 may be disposed on the adhesive layer 180. The first semiconductor layer 221, the active layer 222, and the second semiconductor layer 223 may be disposed on the first electrode 210.

[0106] The first electrode 210, the light-emitting layer 220, and the second electrode 230 can be sequentially disposed in the thickness direction (third direction DR3). The first electrode 210, the light-emitting layer 220, and the second electrode 230 can overlap in the thickness direction (third direction DR3). The light-emitting layer 220 can be disposed between the first electrode 210 and the second electrode 230. The active layer 222 of the light-emitting layer 220 can be disposed between the first semiconductor layer 221 and the second semiconductor layer 223 of the light-emitting layer 220.

[0107] The first electrode 210 may be disposed between the adhesive layer 180 and the light-emitting layer 220. The first electrode 210 may be either an anode or a cathode. For example, the first electrode 210 may be a cathode, but is not limited thereto.

[0108] When the first electrode 210 is a cathode, the first electrode 210 can be electrically connected to a common voltage terminal (or a high-potential voltage terminal). When the first electrode 210 is a cathode, the common voltage terminal (or a high-potential voltage terminal) and the first semiconductor layer 221 can be electrically connected through the first electrode 210.

[0109] The first electrode 210 may include a conductive material. The conductive material may be made of at least one selected from, for example, transparent conductive materials (such as ITO, IZO, etc.) or opaque conductive materials (such as nickel (Ni), gold (Au), platinum (Pt), titanium (Ti), aluminum (Al), chromium (Cr), copper (Cu), silver (Ag), or alloys thereof), but is not limited thereto.

[0110] The light-emitting layer 220 can be disposed on the first electrode 210. The first semiconductor layer 221, the active layer 222, and the second semiconductor layer 223 of the light-emitting layer 220 can be sequentially disposed on the first electrode 210 in the thickness direction. The active layer 222 can be disposed between the first semiconductor layer 221 and the second semiconductor layer 223.

[0111] For example, the light-emitting layer 220 may include one or more of a hole injection layer (HIL), a hole transport layer (HTL), an electron transport layer (ETL), and an electron injection layer (EIL), but this disclosure is not limited thereto.

[0112] The first semiconductor layer 221 may be disposed on the first electrode 210. The first semiconductor layer 221 may be disposed between the first electrode 210 and the active layer 222. The first semiconductor layer 221 may include a first type of dopant. For example, the first semiconductor layer 221 may include an n-type dopant, but is not limited thereto.

[0113] When the first semiconductor layer 221 includes an n-type dopant, the first semiconductor layer 221 can provide electrons to the active layer 222 and has a material coated with impurities (such as silicon (Si), germanium (Ge), selenium (Se), tellurium (Te), etc.), such as gallium nitride (GaN), indium aluminum phosphide (InAlP), gallium arsenide (GaAs), etc.

[0114] The active layer 222 can be disposed on the first semiconductor layer 221. The active layer 222 can receive electrons and holes from the first semiconductor layer 221 and the second semiconductor layer 223 and emit light. The active layer 222 can be formed as a single-layer or multi-quantum well (MQW) structure, and can be made of, for example, indium gallium nitride (InGaN), gallium nitride (GaN), etc., but is not limited thereto.

[0115] The second semiconductor layer 223 may be disposed on the active layer 222. The second semiconductor layer 223 may be disposed between the active layer 222 and the second electrode 230. The second semiconductor layer 223 may include a second type of dopant different from the first type of dopant. For example, the second semiconductor layer 223 may include a p-type dopant, but is not limited thereto.

[0116] When the second semiconductor layer 223 includes a p-type dopant, the second semiconductor layer 223 can provide holes to the active layer 222 and has a material coated with impurities (such as magnesium (Mg), zinc (Zn), beryllium (Be), etc.), such as gallium nitride (GaN), indium aluminum phosphide (InAlP), gallium arsenide (GaAs), etc.

[0117] This application describes a first semiconductor layer 221 including an n-type dopant and a second semiconductor layer 223 including a p-type dopant; however, various embodiments of this application are not limited thereto, and the first semiconductor layer 221 may include a p-type dopant, and the second semiconductor layer 223 may include an n-type dopant. For example, the active layer 222 can receive holes and electrons from the first semiconductor layer 221 and the second semiconductor layer 223 and emit light.

[0118] The light-emitting layer 220 may have a mesa structure. The side surface of the light-emitting layer 220 may be formed as an inclined surface relative to the thickness direction (third direction DR3). The planar dimensions of the light-emitting layer 220 may decrease from the first semiconductor layer 221 toward the second semiconductor layer 223. The width of the light-emitting layer 220 may decrease from the first semiconductor layer 221 toward the second semiconductor layer 223, but is not limited thereto.

[0119] The second electrode 230 can be disposed on the light-emitting layer 220. The second electrode 230 can also be disposed on the second semiconductor layer 223 of the light-emitting layer 220. For example, the second electrode 230 can be disposed on the entire surface of the second semiconductor layer 223. The second electrode 230 can be either an anode or a cathode. For example, when the first electrode 210 is a cathode, the second electrode 230 can be an anode, but is not limited thereto. For example, when the first electrode 210 is an anode, the second electrode 230 can be a cathode.

[0120] This application describes the first electrode 210 as a cathode and the second electrode 230 as an anode, but various embodiments of this application are not limited thereto. For example, the first electrode 210 may be an anode and the second electrode 230 may be a cathode.

[0121] When the second electrode 230 is the anode, it can be electrically connected to the transistor TR. When the second electrode 230 is the anode, the transistor TR and the second semiconductor layer 223 can be electrically connected through the second electrode 230.

[0122] The second electrode 230 may include a conductive material. The conductive material may be made of at least one selected from, for example, transparent conductive materials (such as ITO, IZO, etc.) or opaque conductive materials (such as nickel (Ni), gold (Au), platinum (Pt), titanium (Ti), aluminum (Al), chromium (Cr), copper (Cu), silver (Ag), or alloys thereof), but is not limited thereto.

[0123] The passivation film 240 can be disposed on the side surface of the light-emitting layer 220. The passivation film 240 can be disposed along the periphery of the light-emitting layer 220 and surrounding the light-emitting layer 220.

[0124] The passivation film 240 can be in direct contact with the side surface of the light-emitting layer 220. The passivation film 240 can be disposed on the side surface of the first semiconductor layer 221, the active layer 222, and the second semiconductor layer 223. The passivation film 240 can be in direct contact with the side surface of the first semiconductor layer 221, the active layer 222, and the second semiconductor layer 223.

[0125] The passivation film 240 can be made of inorganic insulating materials, such as silicon oxide, silicon nitride, silicon oxynitride, aluminum oxide, etc., but is not limited to these.

[0126] The passivation film 240 can protect the light-emitting layer 220, prevent or at least reduce leakage current flowing to the side of the light-emitting layer 220, and suppress, prevent or at least reduce short circuits between the light-emitting layer 220 and the connecting electrodes 195 and 250.

[0127] A common connection electrode 195 may be disposed on the adhesive layer 180. The common connection electrode 195 may be in contact with the light-emitting element LD. The common connection electrode 195 may be made of the same material as the pixel connection electrode 250, but is not limited thereto.

[0128] The adhesive layer 180 may be defined to pass through in the thickness direction (third direction DR3) to expose the first through-hole TH1 of the fourth connection electrode 175. The common connection electrode 195 may be disposed on the fourth connection electrode 175 through the first through-hole TH1.

[0129] The common connection electrode 195 can be electrically connected to and in contact with the first electrode 210. For example, the common connection electrode 195 can contact the side surface of the first electrode 210. Through the first through-hole TH1, the common connection electrode 195 can be electrically connected to and in contact with the fourth connection electrode 175 exposed by the first through-hole TH1. For example, the first electrode 210 and the fourth connection electrode 175 can be electrically connected through the common connection electrode 195.

[0130] A portion of the first electrode 210 may be disposed between the common connection electrode 195 and the outer surface of the passivation film 240.

[0131] The common connection electrode 195 can directly contact the side surface of the first electrode 210. The common connection electrode 195 can be configured to surround the first electrode 210 along its periphery. Therefore, since the contact area between the common connection electrode 195 and the first electrode 210 can be increased, the light-emitting element LD and the common connection electrode 195 can be electrically connected more smoothly. Furthermore, the electrical characteristics of the display device 10 can be improved, thereby enabling low-voltage driving or improving luminous efficiency or brightness by applying a higher voltage.

[0132] The first electrode 210 may protrude outward from the side surface of the light-emitting layer 220. The first electrode 210 may protrude further outward than the side surface of the passivation film 240. The planar dimension (area) of the first electrode 210 may be larger than the planar dimension (area) of the light-emitting layer 220.

[0133] The first electrode 210 may overlap with the entire area of ​​the light-emitting layer 220 in the thickness direction (third direction DR3). The first electrode 210 may overlap with the entire area of ​​the passivation film 240 in the thickness direction (third direction DR3).

[0134] The first electrode 210 may extend along the outer surface of the passivation film 240 in the thickness direction (third direction DR3). The first electrode 210 may extend along the outer surface of the passivation film 240 in the thickness direction (third direction DR3) near the edge of the passivation film 240. A portion of the passivation film 240 may be disposed between the light-emitting layer 220 and the first electrode 210. A portion of the first electrode 210 may be disposed between the passivation film 240 and the common connection electrode 195.

[0135] The first electrode 210 may extend in the thickness direction (third direction DR3) in a region that protrudes further outward from the side surface of the passivation film 240, and may be disposed on a portion of the outer surface of the passivation film 240. The first electrode 210 may be in direct contact with portions of the outer and lower surfaces of the passivation film 240.

[0136] The inner surface of the passivation film 240 can be disposed on the light-emitting layer 220 to directly contact the light-emitting layer 220, and a portion of the outer surface of the passivation film 240 can be covered by the first electrode 210. For example, the lower part of the outer surface of the passivation film 240 can be covered by the first electrode 210. The first electrode 210 can directly contact the outer surface of the passivation film 240. At least a portion of the passivation film 240 can be disposed between the first electrode 210 and the light-emitting layer 220.

[0137] As the first electrode 210 extends along the outer surface of the passivation film 240 in the thickness direction (third direction DR3), the area where the first electrode 210 can contact the common connection electrode 195 can be further increased. Therefore, the electrical characteristics of the display device 10 can be further improved, thereby achieving smoother low-voltage driving, or higher voltages can be applied, thereby more smoothly improving light efficiency and brightness.

[0138] The first insulating layer 190 and the second insulating layer 200 can be sequentially disposed on the common connection electrode 195. The first insulating layer 190 can be disposed between the adhesive layer 180 and the second insulating layer 200. For example, the first insulating layer 190 can be disposed between the adhesive layer 180, the common connection electrode 195, and the second insulating layer 200.

[0139] A first insulating layer 190 and a second insulating layer 200 may be disposed on the adhesive layer 180, simultaneously covering the common connection electrode 195. The second insulating layer 200 may cover at least a portion of the light-emitting element LD. The first insulating layer 190 and the second insulating layer 200 may be formed to have a thickness sufficient to completely cover the light-emitting element LD.

[0140] The first insulating layer 190 and the second insulating layer 200 can provide flat surfaces on the transistor TR and the light-emitting element LD, and fix the position of the light-emitting element LD.

[0141] Pixel connection electrode 250 may be disposed on second insulating layer 200. Pixel connection electrode 250 may contact the upper surface and side surface of second electrode 230. Adhesive layer 180, first insulating layer 190 and second insulating layer 200 may be defined to pass through in the thickness direction (third direction DR3) to expose second via TH2 of third connection electrode 171. Second insulating layer 200 may be defined to pass through in the thickness direction (third direction DR3) to expose opening OP of light-emitting element LD. Opening OP may expose second electrode 230.

[0142] Through the opening OP, the pixel connection electrode 250 can be electrically connected to and in contact with the second electrode 230 exposed by the opening OP.

[0143] Through the second via TH2, the pixel connection electrode 250 can be electrically connected to and in contact with the third connection electrode 171 exposed by the second via TH2. For example, the second electrode 230 and the third connection electrode 171 can be electrically connected through the pixel connection electrode 250.

[0144] When the display device 10 is a top-emitting type, the pixel connection electrode 250 can be made of a transparent conductive material; or when the display device 10 is a bottom-emitting type, the pixel connection electrode 250 can be made of a light-reflective conductive material. The transparent conductive material can be ITO, IZO, etc., but is not limited to these. The light-reflective conductive material can be Al, Ag, Au, Pt, Cu, etc., but is not limited to these. The pixel connection electrode 250 made of the light-reflective conductive material can be formed from a single layer containing the light-reflective conductive material or from multiple layers stacked with single layers.

[0145] The opening OP can be larger than the second electrode 230. The sidewalls of the opening OP can be formed by the second insulating layer 200, and the sidewalls of the opening OP can be spaced apart from the second electrode 230 and can surround the second electrode 230.

[0146] The opening OP can overlap with the entire area of ​​the second electrode 230 in the thickness direction (third direction DR3). The entire area of ​​the second electrode 230 can be disposed within the opening OP.

[0147] The opening OP can expose all the upper and side surfaces of the second electrode 230 and a portion of the upper side of the passivation film 240, but is not limited thereto.

[0148] At least a portion of the pixel connection electrode 250 may be disposed within the opening OP. When the opening OP exposes all the upper and side surfaces of the second electrode 230, the pixel connection electrode 250 may contact all the upper and side surfaces of the second electrode 230 exposed by the opening OP. The pixel connection electrode 250 may directly contact all the upper and side surfaces of the second electrode 230 exposed by the opening OP. Here, the upper surface of the second electrode 230 is the surface opposite to the lower surface of the second electrode 230 facing the light-emitting layer 220.

[0149] When the opening OP exposes a portion of the passivation film 240, the pixel connection electrode 250 can directly contact the passivation film 240 exposed by the opening OP. The pixel connection electrode 250 can directly contact the upper and outer surfaces of the passivation film 240 exposed by the opening OP.

[0150] With the opening OP exposing all the upper and side surfaces of the second electrode 230, the area of ​​the second electrode 230 that can contact the pixel connection electrode 250 can be increased. Therefore, the electrical characteristics of the display device 10 can be further improved, thereby achieving smoother low-voltage driving, or higher voltages can be applied, thereby more smoothly improving light efficiency and brightness.

[0151] In the following, a method for manufacturing a display device 1 according to an exemplary embodiment will be described. While describing the method for manufacturing a display device 1 according to an exemplary embodiment, previously described will be briefly given or omitted. Figures 1 to 3 Description of the components described in the document.

[0152] Figures 4 to 12 This is a view illustrating each operation of the manufacturing process of a display device according to an example embodiment.

[0153] Reference Figure 4 The first semiconductor layer 221, the active layer 222, and the second semiconductor layer 223 can be epitaxially grown on the entire surface of the first dummy substrate DS1. During this process, the first semiconductor layer 221 and the second semiconductor layer 223 can each be doped with one of a first type of dopant and a second type of dopant. The second electrode 230 can be formed above the entire surface of the second semiconductor layer 223. The width of the light-emitting layer 220 can decrease from the first semiconductor layer 221 toward the second semiconductor layer 223, but is not limited thereto.

[0154] The first semiconductor layer 221, active layer 222, second semiconductor layer 223 and second electrode 230 formed above the entire surface of the first dummy substrate DS1 can be patterned and formed into multiple independent island shapes. Figure 4 Only a single patterned island shape is shown, but various embodiments of this application are not limited to this, and multiple island-shaped portions can be formed.

[0155] After the first semiconductor layer 221, active layer 222, second semiconductor layer 223, and second electrode 230 are patterned, a passivation film 240 can be formed. The passivation film 240 can be formed above the entire surface of the first dummy substrate DS1, simultaneously covering the patterned first semiconductor layer 221, active layer 222, second semiconductor layer 223, and second electrode 230. For example, the passivation film 240 can be formed to cover the side surface of the light-emitting layer 220 and the upper and side surfaces of the second electrode 230.

[0156] Next, further reference Figure 5 The passivation film 240 and the patterned first semiconductor layer 221, active layer 222, second semiconductor layer 223, and second electrode 230 are attached to the second dummy substrate DS2 by an adhesive AD. The adhesive AD can be disposed over the entire area between the first dummy substrate DS1 and the second dummy substrate DS2.

[0157] Next, refer to Figure 6 Remove the portion of the first dummy substrate DS1 and the passivation film 240 that is in direct contact with the first dummy substrate DS1, and remove the portion of the adhesive AD. The remaining adhesive AD can expose the side surface of the passivation film 240 and can be disposed in an island shape between the passivation film 240 and the second dummy substrate DS2.

[0158] Next, refer to Figure 7 A first electrode 210 is formed on the exposed first semiconductor layer 221. A light-emitting element (LD) is formed by forming the first electrode 210 on the exposed first semiconductor layer 221. The first electrode 210 can not only be formed on the exposed first semiconductor layer 221, but can also extend to the side surface of the passivation film 240. For example, the side surface of the first electrode 210 can protrude further outward than the outer surface of the passivation film 240. A portion of the first electrode 210 can be disposed on the outer surface of the passivation film 240.

[0159] By first patterning the first semiconductor layer 221, the active layer 222, the second semiconductor layer 223, and the second electrode 230, and forming the first electrode 210 on the first semiconductor layer 221, the first electrode 210 can be formed to protrude further outward from the side surface of the first semiconductor layer 221, and furthermore, it can be formed to extend to the side surface of the passivation film 240. A portion of the first electrode 210 can be formed to extend to the outer surface of the passivation film 240, but is not limited thereto.

[0160] Therefore, since the contact area between the common connection electrode 195 and the first electrode 210 can be increased, the light-emitting element LD and the common connection electrode 195 can be electrically connected more smoothly.

[0161] Next, refer to Figure 8 The light-emitting element (LD) is transferred onto a substrate 110. The substrate 110 has a buffer layer 120, a transistor TR, a gate insulating layer 130, a first planarization layer 140, a second planarization layer 160, an adhesive layer 180, and connecting electrodes 151, 155, 171, and 175. The light-emitting element (LD) can be transferred onto the adhesive layer 180.

[0162] The adhesive layer 180 may define a first via TH1 exposing the fourth connecting electrode 175 and a third via TH3 exposing the third connecting electrode 171. The third via TH3 may be... Figure 2 A portion of the second through-hole TH2 in the middle. The light-emitting element LD can be transferred to the portion of the adhesive layer 180 other than the first through-hole TH1 and the third through-hole TH3.

[0163] After the light-emitting element (LD) is transferred, an illumination test can be performed to determine whether the LD is operating correctly.

[0164] Next, refer to Figure 9 This forms a common connection electrode 195 and a first insulating layer 190.

[0165] The common connection electrode 195 can extend to the first through-hole TH1, while covering the entire area of ​​the light-emitting element LD. Therefore, the common connection electrode 195 can be electrically connected to and in contact with the first electrode 210 and the fourth connection electrode 175.

[0166] A first insulating layer 190 may be formed on the adhesive layer 180, simultaneously covering the common connection electrode 195. The first insulating layer 190 may be patterned in the region where the third via TH3 is provided to expose the third via TH3, thereby defining a fourth via TH4. The width of the fourth via TH4 may be greater than, but is not limited to, the width of the third via TH3. The fourth via TH4 passing through the first insulating layer 190 may overlap with the third via TH3 passing through the adhesive layer.

[0167] like Figure 8 and Figure 9 As shown, by separately transferring the light-emitting element (LD) and forming the conductive layer (e.g., common connection electrode 195), the stability of each process can be improved, and the stability of the process in which the light-emitting element (LD) contacts the conductive layer (e.g., common connection electrode 195) can also be improved. Therefore, process efficiency can be improved, process costs can be reduced, and furthermore, production energy can be reduced.

[0168] Next, refer to Figure 10A portion of the first insulating layer 190 and a portion of the common connection electrode 195 can be etched. The etching process can be performed using dry etching, but is not limited to this.

[0169] The etching process can remove the portion of the first insulating layer 190 disposed on the light-emitting element LD and the portion of the common connection electrode 195 disposed on the light-emitting element LD. The portion of the common connection electrode 195 that does not contact the first electrode 210 can be removed, and the portion of the first insulating layer 190 disposed on the corresponding area of ​​the common connection electrode 195 can also be removed. The upper surface of the common connection electrode 195 exposed by etching can have the same height as the surrounding upper surface of the first insulating layer 190, but is not limited to this.

[0170] When a portion of the first insulating layer 190 and a portion of the common connection electrode 195 are removed, the portion of the passivation film 240 disposed on the light-emitting element LD can be exposed. For example, the lower portion of the passivation film 240 can be covered by the first insulating layer 190 and the common connection electrode 195, and the upper portion of the passivation film 240 can be exposed.

[0171] Next, refer to Figure 11 A second insulating layer 200 is formed on the first insulating layer 190.

[0172] The second insulating layer 200 can be patterned to define a fifth via TH5 that exposes the third via TH3 and the fourth via TH4. Thus, a second via TH2 can be formed. For example, the width of the fifth via TH5 can be greater than the widths of the third via TH3 and the fourth via TH4, but is not limited thereto.

[0173] The second insulating layer 200 may be patterned to define an opening OP that exposes the second electrode 230 and the passivation film 240. During the patterning process of the second insulating layer 200, the passivation film 240 covering the second electrode 230 may also be removed. However, various embodiments of this application are not limited to this, and the passivation film 240 covering the second electrode 230 may be removed by a separate etching process.

[0174] The opening OP can be formed to be larger than the second electrode 230, and the sidewalls of the opening OP can be formed to surround the second electrode 230. The opening OP can overlap with the entire area of ​​the second electrode 230 in the thickness direction (third direction DR3). The entire area of ​​the second electrode 230 can be disposed within the opening OP.

[0175] Therefore, the side and top surfaces of the second electrode 230 can be exposed, and the second electrode 230 can contact the pixel connection electrode 250 across its side and top surfaces. For example, the area where the second electrode 230 can contact the pixel connection electrode 250 can be increased. For example, the pixel connection electrode 250 can cover the side and top surfaces of the second electrode 230.

[0176] In addition, the required tolerance for alignment between the second electrode 230 and the pixel connection electrode 250 can be increased, thereby performing the process more efficiently and reducing process time and cost.

[0177] Next, refer to Figure 12 A pixel connection electrode 250 is formed on the second insulating layer 200.

[0178] The pixel connection electrode 250 can be patterned and can have one end disposed inside the second through-hole TH2 to contact the third connection electrode 171 and another end disposed inside the opening OP to contact the second electrode 230. The second electrode 230 and the third connection electrode 171 can be electrically connected through the pixel connection electrode 250.

[0179] Although not shown, after the pixel connection electrode 250 is patterned, a black matrix can be further disposed on the second via TH2, the second insulating layer 200, and the pixel connection electrode 250. The black matrix can be disposed in the display area DA (see [reference]). Figure 1 In addition to each pixel PX (see) Figure 1 Above the entire area outside the luminescent area of ​​).

[0180] The upper protective layer, cover glass, etc. can be further set on the black matrix to flatten the upper part and protect the components below.

[0181] Multiple light-emitting elements (LDs) can be set for each of multiple sub-pixels, but are not limited to this. For sub-pixels SP1, SP2, and SP3 (see...), multiple light-emitting elements (LDs) can be set for each of them. Figure 1 Each of these components has multiple light-emitting elements (LDs). For example, two LDs can be transferred to sub-pixels SP1, SP2, and SP3 (see [link to documentation]). Figure 1 Each of the multiple subpixels can be transferred to, but is not limited to, more or fewer light-emitting elements (LDs).

[0182] Therefore, when set in sub-pixels SP1, SP2, and SP3 (see...) Figure 1 If one of the two light-emitting elements (LDs) in each of the two light-emitting elements is defective, light can be emitted from the corresponding sub-pixel SP1, SP2, or SP3 through the other light-emitting element (LD). (See [link to other components]) Figure 1 ) emits light. Alternatively, it is set in sub-pixels SP1, SP2, and SP3 (see Figure 1 The two light-emitting elements LD in each of them can be operated as redundant LEDs that emit light.

[0183] Other exemplary embodiments of this application will be described below. Among the components included in these other exemplary embodiments, those related to the reference... Figures 1 to 12 The content described is essentially the same, the same reference numerals are given, and overlapping content may be omitted or briefly described.

[0184] Figure 13 This is a cross-sectional view of a display device according to another example embodiment. Figure 13 This is an enlarged view of the area surrounding the light-emitting element (LD).

[0185] Reference Figure 13 According to another example embodiment, the display device 10_1 may include a light-emitting element LD. The second electrode 230_1 of the light-emitting element LD may extend to protrude toward the second semiconductor layer 223 near its side surface. The second electrode 230_1 may be thicker near its side surface. Therefore, the second semiconductor layer 223 may be thinner near its side surface.

[0186] A portion of the second electrode 230_1 may be disposed between the second semiconductor layer 223 and the passivation film 240. The second electrode 230_1 protruding toward the second semiconductor layer 223 may be disposed between the second semiconductor layer 223 and the passivation film 240. For example, the second electrode 230_1 protruding toward the second semiconductor layer 223 may be disposed between a side surface of the second semiconductor layer 223 and the passivation film 240.

[0187] like Figure 4 As shown, a first semiconductor layer 221, an active layer 222, and a second semiconductor layer 223 can be epitaxially grown, and then the second semiconductor layer 223 can be patterned. By patterning the second semiconductor layer 223, it can be formed to have different thicknesses for each region, and some regions can be formed to protrude further than other regions. For example, the second semiconductor layer 223 can be thinner near its side surface.

[0188] By forming a second electrode 230_1 on the patterned second semiconductor layer 223, the second electrode 230_1 can be formed to protrude and extend toward the second semiconductor layer 223 near the side surface of the second semiconductor layer 223.

[0189] The side surface of the second electrode 230_1 can be closer to the light-emitting layer 220. Therefore, non-luminous coupling that may occur at the side surface of the second electrode 230_1 can be reduced, and current leakage to the side surface can be suppressed, prevented, or at least reduced. In addition, the luminous efficiency of the light-emitting element LD can be improved.

[0190] Even in this case, the contact area between the common connection electrode 195 and the first electrode 210, as well as the contact area between the pixel connection electrode 250 and the second electrode 230_1, can be increased to improve the electrical characteristics of the display device 10_1, enabling low-voltage driving, or a higher voltage can be applied to improve light efficiency or brightness.

[0191] Figure 14 This is a cross-sectional view of a display device according to yet another exemplary embodiment. Figure 14 This is a magnified view of the area surrounding the light-emitting element (LD).

[0192] Reference Figure 14 According to yet another example embodiment, the display device 10_2 may include a light-emitting element LD. The second electrode 230_2 may be larger than the second semiconductor layer 223.

[0193] For example, the second electrode 230_2 can be disposed on a portion of the passivation film 240 and the second semiconductor layer 223. The second electrode 230_2 can cover the upper surface of the second semiconductor layer 223 and a portion of the upper side of the passivation film 240.

[0194] The second electrode 230_2 may protrude further outward than the side surface of the second semiconductor layer 223. The second electrode 230_2 may be disposed on the upper surface of the passivation film 240, and the second electrode 230_2 may be in direct contact with the upper surface of the passivation film 240.

[0195] The outer surface of the passivation film 240 may extend further outward than the side surface of the second electrode 230_2. The side surface of the second electrode 230_2 may be disposed between the outer surface and the inner surface of the passivation film 240.

[0196] The second electrode 230_2 may overlap with the passivation film 240 in the thickness direction (third direction DR3). For example, the second electrode 230_2 may overlap with a portion of the passivation film 240 and the second semiconductor layer 223 in the thickness direction (third direction DR3).

[0197] like Figure 4As shown, the first semiconductor layer 221, the active layer 222, and the second semiconductor layer 223 can be epitaxially grown and then immediately patterned. A passivation film 240 can be formed on the patterned first semiconductor layer 221, active layer 222, and second semiconductor layer 223, and a portion of the formed passivation film 240 can be removed to expose the second semiconductor layer 223.

[0198] Subsequently, a second electrode 230_2 can be formed on the second semiconductor layer 223 exposed by the passivation film 240. Therefore, the second electrode 230_2 can be formed across the second semiconductor layer 223 and the passivation film 240.

[0199] Even in this case, the contact area between the common connection electrode 195 and the first electrode 210, as well as the contact area between the pixel connection electrode 250 and the second electrode 230_2, can be increased to improve the electrical characteristics of the display device 10_2, enabling low-voltage driving, or a higher voltage can be applied to improve light efficiency or brightness.

[0200] The display device according to various exemplary embodiments of this application can be described as follows.

[0201] According to various exemplary embodiments of this application, a display device is provided, the display device comprising: a substrate; a light-emitting element disposed on the substrate; and a common connection electrode disposed on the substrate and in contact with the light-emitting element, wherein the light-emitting element comprises: a first electrode disposed on the substrate; a light-emitting layer disposed on the first electrode; a second electrode disposed on the light-emitting layer; and a passivation film disposed on a side surface of the light-emitting layer, and a portion of the first electrode being disposed on the outer surface of the passivation film.

[0202] According to various exemplary embodiments of this application, the common connection electrode may contact the side surface of the first electrode.

[0203] According to various exemplary embodiments of this application, a high potential voltage can be applied through the common connection electrode.

[0204] According to various exemplary embodiments of this application, the planar dimensions of the first electrode may be larger than the planar dimensions of the light-emitting layer.

[0205] According to various exemplary embodiments of this application, the entire area of ​​the light-emitting layer may overlap with the first electrode in the thickness direction.

[0206] According to various exemplary embodiments of this application, the side surface of the first electrode may protrude further outward than the outer surface of the passivation film.

[0207] According to various exemplary embodiments of this application, the first electrode may extend along the outer surface of the passivation film near the edge of the passivation film.

[0208] According to various exemplary embodiments of this application, a portion of the passivation film may be disposed between the light-emitting layer and the first electrode.

[0209] According to various exemplary embodiments of this application, the passivation film may be configured to surround the light-emitting layer along the edge of the light-emitting layer.

[0210] According to various exemplary embodiments of this application, the first electrode may be in direct contact with the outer surface of the passivation film.

[0211] According to various exemplary embodiments of this application, the display device may further include an adhesive layer disposed on the substrate, a first insulating layer disposed on the adhesive layer, and a second insulating layer disposed on the first insulating layer, wherein the first insulating layer and the second insulating layer may cover at least a portion of the light-emitting element, and the second insulating layer may define an opening that exposes the side surface and the top surface of the second electrode.

[0212] According to various exemplary embodiments of this application, the display device may further include a pixel connection electrode disposed on the second insulating layer, wherein the pixel connection electrode may contact the upper surface and the side surface of the second electrode exposed through the opening.

[0213] According to various exemplary embodiments of this application, the display device may further include transistors disposed on the substrate, wherein the pixel connection electrodes may be electrically connected to the transistors.

[0214] According to various exemplary embodiments of this application, the display device may further include: a first planarization layer disposed on the transistor; a first connection electrode and a second connection electrode disposed on the first planarization layer, wherein the first connection electrode may be electrically connected to the transistor.

[0215] According to various exemplary embodiments of this application, the display device may further include: a second planarization layer disposed on the first connection electrode and the second connection electrode; a third connection electrode and a fourth connection electrode disposed on the second planarization layer, wherein the third connection electrode is electrically connected to the first connection electrode and the fourth connection electrode is electrically connected to the second connection electrode.

[0216] According to various exemplary embodiments of this application, the adhesive layer, the first insulating layer, and the second insulating layer may define a second via that exposes the third connection electrode, and the pixel connection electrode may be electrically connected to the third connection electrode exposed by the second via.

[0217] According to various exemplary embodiments of this application, the opening may further expose a portion of the passivation film.

[0218] According to various exemplary embodiments of this application, the display device may further include a pixel connection electrode disposed on the second insulating layer, wherein the pixel connection electrode may be in direct contact with the passivation film exposed through the opening.

[0219] According to various exemplary embodiments of this application, the light-emitting layer may include: a first semiconductor layer disposed on the first electrode; an active layer disposed on the first semiconductor layer; and a second semiconductor layer disposed on the active layer, wherein the width of the light-emitting layer decreases from the first semiconductor layer toward the second semiconductor layer.

[0220] According to various exemplary embodiments of this application, the side surface of the second electrode may be formed to protrude further toward the light-emitting layer than other regions.

[0221] According to various exemplary embodiments of this application, the second electrode may overlap with the passivation film in the thickness direction.

[0222] According to various exemplary embodiments of this application, a display device is provided, the display device comprising: a substrate; an adhesive layer disposed on the substrate; a light-emitting element disposed on the adhesive layer, wherein the light-emitting element comprises: a first electrode disposed on the adhesive layer; a light-emitting layer disposed on the first electrode; a second electrode disposed on the light-emitting layer; and a passivation film disposed on a side surface of the light-emitting layer, wherein the upper surface and the side surface of the second electrode may be exposed.

[0223] According to various exemplary embodiments of this application, the display device may further include: a first insulating layer disposed on the adhesive layer and covering a lower portion of the light-emitting element; a second insulating layer disposed on the first insulating layer; and a common connection electrode disposed between the adhesive layer and the first insulating layer, wherein the common connection electrode may contact a side surface of the first electrode.

[0224] According to various exemplary embodiments of this application, the side surface of the first electrode may protrude further outward than the outer surface of the passivation film.

[0225] According to various exemplary embodiments of this application, the display device may further include a pixel connection electrode disposed on the second insulating layer, wherein the second insulating layer may define an opening that exposes the upper surface and the side surface of the second electrode, and the pixel connection electrode may contact the upper surface and the side surface of the second electrode exposed through the opening.

[0226] According to various exemplary embodiments of this application, a portion of the first electrode may be disposed on the outer surface of the passivation film.

[0227] Although various exemplary embodiments have been described above with reference to the accompanying drawings, those skilled in the art will understand that the above technical configurations can be implemented in other specific forms without altering their technical spirit or essential characteristics. Therefore, it should be understood that the above embodiments are illustrative and not limiting in all respects. Furthermore, the scope of the various exemplary embodiments is determined by the appended claims rather than the detailed description. Moreover, the meaning and scope of the claims, as well as all changes or modifications derived from their equivalents, should be interpreted as being included within the scope of the various exemplary embodiments.

[0228] Cross-references to related applications

[0229] This application claims priority and benefit to Korean Patent Application No. 10-2025-0048135, filed on April 14, 2025, the entire contents of which are incorporated herein by reference for all purposes as if fully set forth herein.

Claims

1. A display device, the display device comprising: substrate; A light-emitting element, wherein the light-emitting element is disposed on the substrate; as well as A common connection electrode is disposed on the substrate and in contact with the light-emitting element. The light-emitting element includes: A first electrode is disposed on the substrate; A light-emitting layer is disposed on the first electrode; A second electrode, wherein the second electrode is disposed on the light-emitting layer; and A passivation film is disposed on a side surface of the light-emitting layer, and A portion of the first electrode is disposed on the outer surface of the passivation film.

2. The display device according to claim 1, wherein, The common connection electrode is in contact with the side surface of the first electrode.

3. The display device according to claim 2, wherein, A high potential voltage is applied through the common connection electrode.

4. The display device according to claim 1, wherein, The planar dimensions of the first electrode are larger than the planar dimensions of the light-emitting layer.

5. The display device according to claim 4, wherein, The entire area of ​​the light-emitting layer overlaps with the first electrode in the thickness direction.

6. The display device according to claim 1, wherein, The side surface of the first electrode protrudes further outward than the outer surface of the passivation film.

7. The display device according to claim 6, wherein, The first electrode extends along the outer surface of the passivation film near the edge of the passivation film.

8. The display device according to claim 1, wherein, A portion of the passivation film is disposed between the light-emitting layer and the first electrode.

9. The display device according to claim 8, wherein, The passivation film is configured to surround the light-emitting layer along the edge of the light-emitting layer.

10. The display device according to claim 1, wherein, The first electrode is in direct contact with the outer surface of the passivation film.

11. The display device according to claim 1, further comprising an adhesive layer disposed on the substrate, a first insulating layer disposed on the adhesive layer, and a second insulating layer disposed on the first insulating layer. in, The first insulating layer and the second insulating layer cover at least a portion of the light-emitting element, and The second insulating layer defines openings that expose the side and top surfaces of the second electrode.

12. The display device according to claim 11, further comprising a pixel connection electrode disposed on the second insulating layer. in, The pixel connection electrode contacts the upper surface and the side surface of the second electrode exposed through the opening.

13. The display device according to claim 12, further comprising transistors disposed on the substrate. in, The pixel connection electrode is electrically connected to the transistor.

14. The display device according to claim 13, further comprising: A first planarization layer is disposed on the transistor; A first connecting electrode and a second connecting electrode are disposed on the first planarization layer, and The first connection electrode is electrically connected to the transistor.

15. The display device according to claim 14, further comprising: A second planarization layer is disposed on the first connection electrode and the second connection electrode; A third connecting electrode and a fourth connecting electrode are disposed on the second planarization layer, and The third connecting electrode is electrically connected to the first connecting electrode, and the fourth connecting electrode is electrically connected to the second connecting electrode.

16. The display device according to claim 15, wherein, The adhesive layer, the first insulating layer, and the second insulating layer define a second through-hole that exposes the third connection electrode, and The pixel connection electrode is electrically connected to the third connection electrode exposed by the second via.

17. The display device according to claim 11, wherein, The opening further exposes a portion of the passivation film.

18. The display device according to claim 17, further comprising a pixel connection electrode disposed on the second insulating layer. in, The pixel connection electrode is in direct contact with the passivation film exposed through the opening.

19. The display device according to claim 1, wherein, The light-emitting layer includes: A first semiconductor layer is disposed on the first electrode; An active layer, wherein the active layer is disposed on the first semiconductor layer; and A second semiconductor layer is disposed on the active layer, and The width of the light-emitting layer decreases from the first semiconductor layer toward the second semiconductor layer.

20. The display device according to claim 1, wherein, The side surface of the second electrode is formed to protrude further toward the light-emitting layer than other areas.

21. The display device according to claim 1, wherein, The second electrode overlaps with the passivation film in the thickness direction.

22. A display device, the display device comprising: substrate; An adhesive layer disposed on the substrate; Light-emitting element, the light-emitting element being disposed on the adhesive layer, The light-emitting element includes: A first electrode is disposed on the adhesive layer; A light-emitting layer is disposed on the first electrode; A second electrode, wherein the second electrode is disposed on the light-emitting layer; and A passivation film is disposed on a side surface of the light-emitting layer, and The upper and side surfaces of the second electrode are exposed.

23. The display device according to claim 22, further comprising: A first insulating layer is disposed on the adhesive layer and covers a portion of the lower part of the light-emitting element; A second insulating layer is disposed on the first insulating layer; as well as A common connection electrode is disposed between the adhesive layer and the first insulating layer. The common connection electrode is in contact with the side surface of the first electrode.

24. The display device according to claim 23, wherein, The side surface of the first electrode protrudes further outward than the outer surface of the passivation film.

25. The display device according to claim 23, further comprising a pixel connection electrode disposed on the second insulating layer. in, The second insulating layer defines an opening that exposes the upper and side surfaces of the second electrode, and The pixel connection electrode contacts the upper surface and the side surface of the second electrode exposed through the opening.

26. The display device according to claim 22, wherein, A portion of the first electrode is disposed on the outer surface of the passivation film.

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