Display device

Abstract

A display device is disclosed, comprising: a substrate; a transistor disposed on the substrate; a planarization layer disposed on the transistor; a first reflective electrode disposed on the planarization layer; a first adhesive layer disposed on the first reflective electrode; a light-emitting element disposed on the first adhesive layer; and a second reflective electrode in contact with the light-emitting element, wherein the first reflective electrode and the second reflective electrode can be in direct contact with each other.

Description

[0001] Cross-references to related applications

[0002] This application claims the benefit and priority of Korean Patent Application No. 10-2025-0048136, filed on April 14, 2025, the entire contents of which are incorporated herein by reference for all purposes. Technical Field

[0003] This disclosure relates to display devices, and particularly to display devices including, but not limited to, light-emitting elements and reflective electrodes. Background Technology

[0004] With the development of an information-oriented society, the demand for display devices for displaying images has increased, and various types of display devices, such as liquid crystal displays and organic light-emitting diode displays, have been used.

[0005] Among various display devices, OLED devices offer advantages in viewing angle and contrast compared to LCD devices. Since they do not require a separate backlight unit, OLED devices can be lightweight, have a thin profile, and low power consumption. Furthermore, OLED devices can be driven with low voltage and have a fast response time. Specifically, OLED devices have low manufacturing costs.

[0006] However, OLED devices using organic materials may become defective pixels due to oxidation of the organic light-emitting layer and electrodes caused by the penetration of moisture and oxygen or other foreign substances. Therefore, various technical configurations are required to minimize or at least reduce the penetration of moisture and oxygen.

[0007] Research and development of display devices using LEDs (light emitting diodes) made from inorganic materials as light-emitting elements have been ongoing recently, and such LED displays are attracting attention as next-generation display devices due to their high definition and high reliability. For example, inorganic LEDs can provide higher electro-optical conversion efficiency. Furthermore, unlike OLEDs, they do not exhibit the efficiency degradation typical of organic light-emitting materials, which can lead to a gradual increase in power consumption over time for a given brightness target. On the other hand, as LED display devices continue to scale to smaller pixel sizes, there is an increasing need for more precise control of edge light leakage, as well as improved placement accuracy during LED chip transfer and the reliability of chip interconnection.

[0008] The descriptions provided in the Background section should not be assumed to be prior art simply because they are mentioned in or associated with this section. The Background section may include information describing one or more aspects of the subject matter art, and the descriptions in this section do not limit the scope of this disclosure. Summary of the Invention

[0009] Therefore, this disclosure relates to a display device that substantially eliminates one or more problems caused by the limitations and disadvantages of related technologies. The inventors of this disclosure have recognized the problems of conventional display devices and have conducted various experiments on light-emitting elements that can improve the electrical connection between LED devices, the stability of contact processes, and / or light extraction efficiency.

[0010] One aspect of this disclosure is to provide a display device that has a smooth electrical connection between the LED device and the connecting wires.

[0011] Another aspect of this disclosure is to provide a display device with improved stability of the contact process with LED devices.

[0012] Another aspect of this disclosure is to provide a display device with improved light extraction efficiency.

[0013] The embodiments of this disclosure are not limited to the above objectives, and other technical aspects can be inferred from the embodiments described in the following detailed description of this disclosure.

[0014] To achieve at least one of the above and other aspects of the inventive concept, as embodied and broadly described herein, a display device according to one aspect may include: a substrate; a transistor disposed on the substrate; a planarization layer disposed on the transistor; a first reflective electrode disposed on the planarization layer; a first adhesive layer disposed on the first reflective electrode; a light-emitting element disposed on the first adhesive layer; and a second reflective electrode in contact with the light-emitting element, wherein the first reflective electrode and the second reflective electrode may be in direct contact with each other.

[0015] A display device according to another embodiment may include: a substrate; a transistor disposed on the substrate; a planarization layer disposed on the transistor; a first reflective electrode disposed on the planarization layer; a first adhesive layer disposed on the upper surface of the first reflective electrode; a light-emitting element disposed on the first adhesive layer; and a second reflective electrode disposed on the upper surface of the first reflective electrode, wherein the second reflective electrode may be configured to surround at least a portion of the side surface of the light-emitting element.

[0016] According to another embodiment, the display device may include: a substrate; at least one transistor and a light-emitting element disposed above the substrate; a planarization layer disposed on the transistor; a light-emitting element receiving member located on the planarization layer; and wherein the light-emitting element receiving member surrounds the bottom surface and at least a portion of the side surface of the light-emitting element to receive the light-emitting element, and the light-emitting element receiving member has reflective properties.

[0017] Further details of the implementation plan are included in the detailed description and accompanying drawings.

[0018] According to embodiments of this disclosure, a display device with a smooth electrical connection to an LED device can be provided.

[0019] According to embodiments of this disclosure, a display device can be provided with improved stability of the contact process with the LED device.

[0020] According to embodiments of this disclosure, a display device with improved light extraction efficiency can be provided.

[0021] According to embodiments of this disclosure, since the light extraction efficiency is improved, the display device can achieve low power consumption, and thus power consumption can be reduced.

[0022] The effects of this disclosure are not limited to those described above, and those skilled in the art will clearly understand from the following description of the embodiments of this disclosure other effects not described herein.

[0023] Other features and aspects will be set forth in part in the description which follows, and in part will become apparent from that description, or may be learned by practice of the inventive concept provided herein. It should be understood that both the foregoing general description and the following detailed description are exemplary and explanatory, and are intended to provide further explanation of the claimed inventive concept. Attached Figure Description

[0024] The accompanying drawings, included to provide a further understanding of this disclosure and incorporated in and forming part of this application, illustrate embodiments of the disclosure and, together with the specification, serve to illustrate the principles of the disclosure. In the drawings:

[0025] Figure 1 A plan view of a display device according to one embodiment;

[0026] Figure 2 A diagram illustrating the cross-sectional structure of a subpixel according to one embodiment;

[0027] Figure 3 for Figure 2 Enlarged view of region Q1;

[0028] Figure 4 A schematic diagram illustrating the path of light emitted from the light-emitting layer;

[0029] Figures 5 to 8 A diagram illustrating the steps involved in manufacturing a display device according to one embodiment;

[0030] Figure 9 A cross-sectional view of a display device according to another embodiment;

[0031] Figure 10 A cross-sectional view of a display device according to yet another embodiment;

[0032] Figure 11 A cross-sectional view of a display device according to yet another embodiment;

[0033] Figure 12 A cross-sectional view of a display device according to yet another embodiment;

[0034] Figure 13 A cross-sectional view of a display device according to yet another embodiment;

[0035] Figure 14 for Figure 13 Enlarged view of region Q2; and

[0036] Figure 15 This is a cross-sectional view of a display device according to yet another implementation scheme.

[0037] Throughout the accompanying drawings and detailed description, unless otherwise described, the same reference numerals should be understood to refer to the same elements, features, and structures. For clarity, illustration, and convenience, the relative dimensions and depictions of these elements may be exaggerated. Detailed Implementation

[0038] In the following description, embodiments will be illustrated with reference to the accompanying drawings. However, it should be understood that this disclosure is not limited to the exemplary embodiments described below, and various modifications may be made without departing from the spirit and scope of this disclosure. Furthermore, the terminology used in this disclosure is for the purpose of describing exemplary embodiments only and is not intended to be limiting. In this specification, when a component (or region, layer, portion, etc.) is referred to as being “on,” “connected to,” “coupled to,” “attached to,” “adhere to,” or “bonded to” another component, the component may be directly on, connected to, “coupled to,” “attached to,” “adhere to,” or bonded to the other component, or a third component may be present therein.

[0039] The same reference numerals always refer to the same elements. Furthermore, in the drawings, the thickness, width, length, area, scale, and dimensions of the constituent elements are merely illustrative and may be exaggerated for ease of description and clarity. The term "and / or" includes any one of the associated listed items and all combinations of one or more.

[0040] It will be understood that when the terms “first” and “second” are used herein to describe the constituent elements, these constituent elements should not be limited by these terms. The terms are used only to distinguish one constituent element from another. For example, a first constituent element may be referred to as a second constituent element without departing from the scope of this disclosure, and vice versa. Unless the context clearly indicates otherwise, the singular expressions and terms used herein also cover or include the plural expressions and terms.

[0041] Furthermore, terms such as "below," "under," "above," and "above" are used to describe the relationships of the configurations shown in the accompanying drawings. These terms are described as relative concepts based on the directions shown in the drawings. Thus, the case where the first element is "above" the second element includes the case where the first element is "below" the second element in the figures or in the actual configuration, as well as the case where the first element is "above" the second element.

[0042] In various embodiments of this disclosure, the terms "comprising" or "including" may refer to a characteristic, a fixed number, a step, a process, a component, or a combination thereof, but do not exclude other characteristics, fixed numbers, steps, processes, components, or combinations thereof.

[0043] The shapes described in this disclosure, such as circles, rectangles, polygons, flat, curved, or stepped structures, are merely examples, and other shapes that achieve similar functionality may also be adopted.

[0044] The materials described in this disclosure are provided by way of example only and may be replaced by other materials having substantially the same physical or electrical properties.

[0045] Figure 1 This is a plan view of a display device according to one embodiment.

[0046] Reference Figure 1 The display device 10 disclosed herein can be applied to TVs; signage; mobile terminals, such as handheld phones, smartphones, etc.; computer monitors such as laptops and desktops; head-up displays (HUDs) for automobiles; backlight units for displays; displays for AR, VR, and MR (mixed reality); and so on, as well as displays for vehicles or similar applications. However, the configuration of the embodiments described in this disclosure can be equivalently applied to devices capable of displaying images, even if the device is a new development type to be developed in the future.

[0047] The display device 10 may use micro LEDs as light-emitting elements, but is not limited to this.

[0048] Display device 10 may include a flexible display fabricated on a thin and flexible substrate. The flexible display can be bent or rolled up like paper while retaining the characteristics of a conventional flat panel display.

[0049] The display device 10 may include a display area DA and a non-display area NDA in which a plurality of pixels PX are disposed. The display device 10 may include a substrate 110 providing space in which a plurality of pixels PX can be disposed.

[0050] The display area DA is the area used to display images, videos, etc., and a plurality of pixels PX can be set within the display area DA. The non-display area NDA is the area where no screen is displayed, and can be referred to as the border area. The non-display area NDA can be set around the display area DA, but is not limited to this. The non-display area NDA can be set to surround the display area DA, but is not limited to this.

[0051] The non-display area NDA can be defined as the area on the substrate 110 other than the display area DA, and can have a relatively narrow width (or size) compared to the width (or size) of the display area DA, but is not limited thereto.

[0052] Pixel PX can be composed of a plurality of subpixels, such as SP1, SP2, and SP3, and each of the subpixels, such as SP1, SP2, and SP3, can emit light of different colors, such as red, blue, and green. However, the subpixels are not limited to this, and may additionally or alternatively include subpixels that emit light such as white. Subpixels SP1, SP2, and SP3 can be arranged sequentially along the first direction DR1.

[0053] Pixel PX can be repeatedly set along the first direction DR1 and the second direction DR2. More specifically, sub-pixels SP1, SP2, and SP3 can each be alternately and repeatedly set along the first direction DR1. Sub-pixels SP1, SP2, and SP3 can each be repeatedly set along the second direction DR2.

[0054] The display device 10 may further include gate lines GL and data lines DL electrically connected to the sub-pixels (e.g., SP1, SP2, and SP3) of each pixel PX. The gate lines GL and data lines DL can provide the signals required by the sub-pixels (e.g., SP1, SP2, and SP3) of each pixel PX.

[0055] The gate line GL can extend along the first direction DR1 and can be repeated along the second direction DR2. The data line DL can extend along the second direction DR2 and can be repeated along the first direction DR1. The gate line GL and the data line DL can intersect each other.

[0056] The substrate 110 may be an array substrate on which transistors are formed, and may include plastic or glass materials.

[0057] According to one embodiment, substrate 110 may comprise an opaque or colored polyimide material. In this case, substrate 110 may also include a backplate bonded to the rear surface of substrate 110 to hold substrate 110 in a flat state. The structure and material of the substrate are not limited thereto.

[0058] According to one embodiment, the back panel may include a plastic material, such as polyethylene terephthalate. The structure and material of the back panel are not limited thereto. For example, the back panel may also be made of polyimide (PI) or polycarbonate (PC). In addition to keeping the substrate flat, the back panel can maintain a constant curvature of the display panel when the display device needs to be bent or folded, and suppress wrinkles that may occur on the surface of the display panel.

[0059] According to one embodiment, the substrate 110 can be a glass substrate. For example, the substrate 110 formed of glass material can be a thin glass substrate with a thickness equal to or less than about 100 μm, and can have flexible properties. The material of the substrate 110 is not limited to this. The substrate 110 may also include a flexible polymer film made of other materials. For example, the flexible polymer film can be made of any of polycarbonate (PC), acrylonitrile-butadiene-styrene copolymer (ABS), polymethyl methacrylate (PMMA), polyethylene naphthalate (PEN), polyethersulfone (PES), cyclic olefin copolymer (COC), triacetyl cellulose (TAC) film, polyvinyl alcohol (PVA) film, polyimide (PI) film, and polystyrene (PS).

[0060] In addition, substrate 110 may also include two or more layers bonded to each other or may be divided into two or more substrates.

[0061] Figure 2 A diagram illustrating the cross-sectional structure of a subpixel according to one embodiment. Figure 3 for Figure 2 A magnified view of the Q1 region. Figure 4 A diagram showing the path of light emitted from the emitting layer.

[0062] Reference Figures 2 to 4 The display device 10 may further include a transistor TR and a light-emitting element LD disposed on the substrate 110. Furthermore, the display device 10 may also include wires electrically connecting the transistor TR and the light-emitting element LD to each other and at least one insulating layer disposed between the components.

[0063] A buffer layer 120 may be disposed on the substrate 110. The buffer layer 120 can minimize or at least reduce the diffusion of moisture or other foreign matter from the substrate 110. The buffer layer 120 may be formed of silicon oxide (SiOx), silicon nitride (SiNy), silicon nitride (SiOxNy), or the like. The buffer layer 120 may be formed as a single layer or multiple layers of silicon oxide (SiOx), silicon nitride (SiNy), silicon nitride (SiOxNy), or the like, but is not limited thereto.

[0064] A transistor TR can be placed on the buffer layer 120. The transistor TR can be used as a driving element for a light-emitting diode (LD). The transistor TR can be a driving transistor, but is not limited to this.

[0065] The transistor TR can be, for example, a thin-film transistor (TFT), an n-channel metal-oxide-semiconductor (NMOS), a p-channel metal-oxide-semiconductor (PMOS), a complementary metal-oxide-semiconductor (CMOS), a field-effect transistor (FET), etc., but is not limited to these.

[0066] In the following description, the plurality of transistors TR will be assumed to be thin-film transistors, but the disclosed techniques are not limited thereto.

[0067] Each of the plurality of transistors TR may include a gate electrode GE, an active layer SCL, a source electrode SE, and a drain electrode DE.

[0068] A gate electrode GE and a common voltage line 121 may be disposed on the buffer layer 120. The gate electrode GE and the common voltage line 121 may be formed of conductive materials such as copper Cu, aluminum Al, molybdenum Mo, titanium Ti, or alloys thereof, but are not limited thereto.

[0069] The common voltage line 121 can be electrically connected to a common power supply terminal (e.g., a high-potential voltage terminal) to receive common power and transmit common power to the second electrode 230 of the light-emitting element LD.

[0070] A gate insulating layer 130 may be disposed on the gate electrode GE. The gate insulating layer 130 may be a layer used to insulate the gate electrode GE from the active layer SCL, and may be formed of an insulating material. For example, the gate insulating layer 130 may be formed as a single layer or multiple layers of silicon oxide SiOx, silicon nitride SiNy, silicon nitride SiOxNy or the like, but is not limited thereto.

[0071] An active layer SCL may be disposed on the gate insulating layer 130. For example, the active layer SCL may be formed of oxide semiconductor, amorphous silicon or polycrystalline silicon, but is not limited thereto.

[0072] On the active layer SCL, the source electrode SE and the drain electrode DE can be spaced apart from each other. The source electrode SE and the drain electrode DE can be electrically connected to the active layer SCL. The source electrode SE and the drain electrode DE can be formed of conductive materials such as copper Cu, aluminum Al, molybdenum Mo, titanium Ti, or alloys thereof, but are not limited thereto.

[0073] A first planarization layer 140 can be provided on the transistor TR. The first planarization layer 140 can planarize the upper part of the substrate 110, which includes a plurality of transistor TRs.

[0074] exist Figure 2 In this context, the gate electrode GE can be shown as being positioned below the active layer SCL, but is not limited to this. In other words, in Figure 2 The diagram shows that the active layer SCL can be disposed between the source electrode SE and the drain electrode DE and the gate electrode GE, but is not limited thereto.

[0075] For example, the gate electrode GE can be disposed on the active layer SCL. In this case, the gate electrode GE can be disposed between the source electrode SE and the drain electrode DE and the active layer SCL.

[0076] The first planarization layer 140 can be formed as a single layer or multiple layers, and can be formed of an organic material. For example, the first planarization layer 140 can be formed of an acryloyl-based organic material, but is not limited thereto. As another example, it can also be formed of a benzocyclobutene-based material. The first planarization layer 140 may include contact holes configured to electrically connect the transistor TR to the second connection electrode 155.

[0077] Although not shown, a protective layer capable of protecting the underlying components may also be provided between the first planarization layer 140 and the transistor TR.

[0078] A first connecting electrode 151 and a second connecting electrode 155 can be disposed on the first planarization layer 140.

[0079] The first connecting electrode 151 and the second connecting electrode 155 can be disposed on the same layer and can be formed of the same material. The first connecting electrode 151 and the second connecting electrode 155 can be disposed on the first planarization layer 140 and can be formed of a metallic material. For example, the first connecting electrode 151 and the second connecting electrode 155 can contain a light-reflective conductive material and can contain at least one selected from aluminum (Al), silver (Ag), gold (Au), platinum (Pt), copper (Cu), etc.

[0080] The first connection electrode 151 can be contacted and electrically connected to the common voltage line 121 through a contact hole penetrating the first planarization layer 140 and the gate insulating layer 130 in the thickness direction (third direction DR3).

[0081] The second connection electrode 155 can contact and be electrically connected to the drain electrode DE of the transistor TR by penetrating a contact hole in the first planarization layer 140 in the thickness direction (e.g., third direction DR3).

[0082] A second planarization layer 160 may be disposed on the first connecting electrode 151 and the second connecting electrode 155. The second planarization layer 160 may be formed of an organic material. For example, the second planarization layer 160 may be formed of an acryloyl-based organic material, but is not limited thereto. The second planarization layer 160 may be formed of the same material as the first planarization layer 140, but is not limited thereto.

[0083] A first reflective electrode RM1 can be disposed on the second planarization layer 160. The first reflective electrode RM1 can reflect the light emitted from the light-emitting element LD to the upper side, thereby improving the light extraction efficiency of the light-emitting element LD.

[0084] The first reflective electrodes RM1 can be arranged in multiples, and can be arranged for each of the light-emitting elements LD. Each of the multiple first reflective electrodes RM1 can be formed as an island, but can be alternatively formed as a grid shape, a line shape or a plate shape depending on the layout, and is not limited thereto.

[0085] The planar dimensions (e.g., area) of the first reflective electrode RM1 can be larger than that of the light-emitting element LD. The entire area of ​​the light-emitting element LD can overlap with the first reflective electrode RM1 in the thickness direction (e.g., the third direction DR3).

[0086] The first reflective electrode RM1 may comprise a material with high reflectivity. For example, the first reflective electrode RM1 may comprise one selected from aluminum (Al), silver (Ag), gold (Au), platinum (Pt), palladium (Pd), titanium (Ti), nickel (Ni), chromium (Cr), molybdenum (Mo), tungsten (W), or alloys thereof. Other reflective conductive materials may also be used, but are not limited thereto.

[0087] An adhesive layer 180 may be disposed on the first reflective electrode RM1. The adhesive layer 180 may fix a light-emitting element LD disposed on the adhesive layer 180. The adhesive layer 180 may be formed of an organic insulating layer. The adhesive layer 180 may be formed of a photocurable adhesive material that can be cured by light. For example, the adhesive layer 180 may be formed of an acryloyl-based material containing a photosensitizer, but is not limited thereto. As another example, the adhesive layer may also be made of one of epoxy resin, UV-curable resin, polyimide-based resin, urethane-based resin, and polydimethylsiloxane (PDMS).

[0088] The adhesive layer 180 may include a first adhesive layer 181 and a second adhesive layer 182 that are separate from and spaced apart from each other. The first adhesive layer 181 and the second adhesive layer 182 may be formed from the same material using the same process.

[0089] The first adhesive layer 181 may be disposed on the first reflective electrode RM1. The first adhesive layer 181 may be disposed on the upper surface of the first reflective electrode RM1. Here, the upper surface of the first reflective electrode RM1 may refer to the surface opposite to its lower surface opposite to the second planarization layer 160. The upper surface of the first reflective electrode RM1 may be opposite to the first electrode 210. The first adhesive layer 181 may be in direct contact with the upper surface of the first reflective electrode RM1.

[0090] The planar dimensions (area) of the first adhesive layer 181 can be smaller than the planar dimensions of the first reflective electrode RM1. The entire area of ​​the first adhesive layer 181 can overlap with the first reflective electrode RM1 in the thickness direction (third direction DR3).

[0091] The first adhesive layer 181 can be separated from the second adhesive layer 182 and can be formed in an island shape throughout the pixel area. The first adhesive layer 181 can be provided in multiple numbers and can be provided for each of the first reflective electrodes RM1. The first adhesive layer 181 can be provided for each of the light-emitting elements LD.

[0092] The side surface of the first adhesive layer 181 may be aligned with the side surface of the first electrode 210, but is not limited thereto.

[0093] Since the second adhesive layer 182 is disposed on the side surface of the first reflective electrode RM1, the second adhesive layer 182 can be disposed on the second planarization layer 160 which is not covered by the first reflective electrode RM1. The second adhesive layer 182 can be in direct contact with the side surface of the first reflective electrode RM1.

[0094] The height of the upper surface of the second adhesive layer 182 may be the same as the height of the upper surface of the first reflective electrode RM1, but is not limited thereto.

[0095] The first adhesive layer 181 and the second adhesive layer 182 may be spaced apart from each other, and the first reflective electrode RM1 may be exposed between the first adhesive layer 181 and the second adhesive layer 182.

[0096] A light-emitting element (LD) can be disposed on the adhesive layer 180. The light-emitting element (LD) can be disposed on the first adhesive layer 181. The light-emitting element (LD) can be disposed on the upper surface of the first adhesive layer 181. The light-emitting element (LD) can be in direct contact with the upper surface of the first adhesive layer 181.

[0097] The light-emitting element (LD) can be an LED (light-emitting diode) or a miniature LED, but is not limited to these. The light-emitting element (LD) can have a vertical structure, but is not limited to these.

[0098] The light-emitting element (LD) may include a first electrode 210, a light-emitting layer 220, a second electrode 230, and a passivation film 240. The light-emitting layer 220 may include a first semiconductor layer 221, an active layer 222, and a second semiconductor layer 223. When the light-emitting element (LD) has a vertical structure, the first electrode 210, the first semiconductor layer 221, the active layer 222, the second semiconductor layer 223, and the second electrode 230 may overlap in the thickness direction (third direction DR3).

[0099] The first electrode 210, the light-emitting layer 220, and the second electrode 230 can be arranged sequentially along the thickness direction (third direction DR3). The first electrode 210, the light-emitting layer 220, and the second electrode 230 can overlap in the thickness direction (e.g., third direction DR3). The light-emitting layer 220 can be disposed between the first electrode 210 and the second electrode 230.

[0100] The first electrode 210 may be disposed between the adhesive layer 180 and the light-emitting layer 220. The first electrode 210 may be either an anode electrode or a cathode electrode. For example, the first electrode 210 may be an anode electrode, but is not limited thereto.

[0101] When the first electrode 210 is the anode electrode, the first electrode 210 can be electrically connected to the transistor TR. When the first electrode 210 is the anode electrode, the transistor TR and the first semiconductor layer 221 can be electrically connected to each other through the first electrode 210.

[0102] The first electrode 210 may comprise a conductive material. The conductive material may be formed of a transparent conductive material, such as ITO (indium tin oxide) or IZO (indium zinc oxide) or the like. Equivalent transparent conductive oxides may also be used as alternatives. However, the conductive material may be formed of at least one of, but is not limited to, opaque conductive materials selected from, but not limited to, nickel (Ni), gold (Au), platinum (Pt), titanium (Ti), aluminum (Al), chromium (Cr), copper (Cu), silver (Ag), or alloys thereof.

[0103] The light-emitting layer 220 can be disposed on the first electrode 210. The first semiconductor layer 221, the active layer 222, and the second semiconductor layer 223 of the light-emitting layer 220 can be disposed sequentially along the thickness direction. The active layer 222 can be disposed between the first semiconductor layer 221 and the second semiconductor layer 223.

[0104] The first semiconductor layer 221 may be disposed on the first electrode 210. The first semiconductor layer 221 may be disposed between the first electrode 210 and the active layer 222. The first semiconductor layer 221 may contain a first type of dopant. For example, the first semiconductor layer 221 may contain a p-type dopant, but is not limited thereto.

[0105] When the first semiconductor layer 221 contains a p-type dopant, the first semiconductor layer 221, as a layer for providing holes to the active layer 222, can be formed by doping materials such as gallium nitride (GaN), indium aluminum phosphide (InAlP), gallium arsenide (GaAs) with impurities such as magnesium (Mg), zinc (Zn), beryllium (Be).

[0106] The active layer 222 can be disposed on the first semiconductor layer 221. The active layer 222 can emit light by receiving holes and electrons from the first semiconductor layer 221 and the second semiconductor layer 223. The active layer 222 can be formed as a single-layer or multi-layer multi-quantum well (MQW) structure, and can be formed of, for example, indium gallium nitride (InGaN) or gallium nitride (GaN), but is not limited thereto.

[0107] The second semiconductor layer 223 may be disposed on the active layer 222. The second semiconductor layer 223 may be disposed between the active layer 222 and the second electrode 230. The second semiconductor layer 223 may contain a second type of dopant different from the first type of dopant. For example, the second semiconductor layer 223 may contain an n-type dopant, but is not limited thereto.

[0108] When the second semiconductor layer 223 contains an n-type dopant, the second semiconductor layer 223, as a layer for providing electrons to the active layer 222, can be formed by doping materials such as gallium nitride (GaN), indium aluminum phosphide (InAlP), gallium arsenide (GaAs) with impurities such as silicon (Si), germanium (Ge), selenium (Se), and tellurium (Te).

[0109] In this disclosure, a first semiconductor layer 221 is described to contain a p-type dopant and a second semiconductor layer 223 to contain an n-type dopant, but is not limited thereto, and the first semiconductor layer 221 may contain an n-type dopant and the second semiconductor layer 223 may contain a p-type dopant.

[0110] The light-emitting layer 220 may have a mesa structure. The side surface of the light-emitting layer 220 may be formed as a slope inclined relative to the thickness direction (e.g., third direction DR3). The planar dimensions of the light-emitting layer 220 may decrease from the first semiconductor layer 221 toward the second semiconductor layer 223. The width of the light-emitting layer 220 may decrease from the first semiconductor layer 221 toward the second semiconductor layer 223.

[0111] The second electrode 230 may be disposed on the second semiconductor layer 223. The second electrode 230 may be either an anode electrode or a cathode electrode. For example, when the first electrode 210 is an anode electrode, the second electrode 230 may be a cathode electrode.

[0112] In this disclosure, the first electrode 210 is described as an anode electrode and the second electrode 230 as a cathode electrode, but this is not a limitation. For example, the first electrode 210 may be a cathode electrode and the second electrode 230 may be an anode electrode.

[0113] When the second electrode 230 is a cathode electrode, the second electrode 230 can be electrically connected to the common voltage line 121. When the second electrode 230 is a cathode electrode, the common voltage terminal (e.g., a high-potential voltage terminal) and the second semiconductor layer 223 can be electrically connected to each other through the second electrode 230 and the common voltage line 121.

[0114] The second electrode 230 may comprise a conductive material. The conductive material may be formed from at least one of the following: for example, a transparent conductive material, such as ITO (indium tin oxide) or IZO (indium zinc oxide); and an opaque conductive material, such as nickel (Ni), gold (Au), platinum (Pt), titanium (Ti), aluminum (Al), chromium (Cr), copper (Cu), silver (Ag), or alloys thereof, but not limited thereto.

[0115] The passivation film 240 can be disposed on the side surface of the light-emitting layer 220. The passivation film 240 can be disposed along the outer periphery of the light-emitting layer 220 and can be disposed around the light-emitting layer 220.

[0116] The passivation film 240 can be in direct contact with the side surface of the light-emitting layer 220. The passivation film 240 can be disposed on the side surface of the first semiconductor layer 221, the active layer 222, and the second semiconductor layer 223. The passivation film 240 can be in direct contact with the side surface of the first semiconductor layer 221, the active layer 222, and the second semiconductor layer 223.

[0117] The passivation film 240 can extend from the side surface of the light-emitting layer 220, cover the side surface of the second electrode 230, and cover a portion of the upper surface of the second electrode 230. The passivation film 240 can expose at least a portion of the side surface of the first electrode 210.

[0118] The passivation film 240 can be formed from, for example, inorganic insulating materials such as silicon oxide, silicon nitride, silicon nitride, aluminum oxide, etc., but is not limited thereto.

[0119] The passivation film 240 can protect the light-emitting layer 220 and prevent leakage current from flowing on the side of the light-emitting layer 220.

[0120] A second reflective electrode RM2 can be disposed on the first reflective electrode RM1. The second reflective electrode RM2 can be disposed on the first reflective electrode RM1 exposed between the first adhesive layer 181 and the second adhesive layer 182. The second reflective electrode RM2 can be disposed on the upper surface of the first reflective electrode RM1.

[0121] The second reflective electrode RM2 can be in direct contact with the first reflective electrode. The second reflective electrode RM2 can be in direct contact with the upper surface of the first reflective electrode RM1. The second reflective electrode RM2 can be in direct contact with the first reflective electrode RM1 exposed between the first adhesive layer 181 and the second adhesive layer 182.

[0122] The second reflective electrode RM2 can be disposed on the side surface of the first adhesive layer 181. The second reflective electrode RM2 can be in direct contact with the side surface of the first adhesive layer 181. The second reflective electrode RM2 can be disposed around the first adhesive layer 181.

[0123] The second reflective electrode RM2 can extend in the thickness direction (e.g., the third direction DR3) and can be disposed on the side surface of the first electrode 210. The second reflective electrode RM2 can be in direct contact with the side surface of the first electrode 210. The second reflective electrode RM2 can be disposed around the first electrode 210. Therefore, the second reflective electrode RM2 and the first electrode 210 can smoothly contact each other and be electrically connected to each other.

[0124] The second reflective electrode RM2 may extend further in the thickness direction (e.g., the third direction DR3) and may be disposed in some regions of the side surface of the passivation film 240. The second reflective electrode RM2 may be in direct contact with some regions of the side surface of the passivation film 240. The second reflective electrode RM2 may be disposed around some regions of the side surface of the passivation film 240.

[0125] The second reflective electrode RM2 can be configured to bridge the first adhesive layer 181 and the second adhesive layer 182, but is not limited thereto. In embodiments of this disclosure, the second reflective electrode RM2 can be configured in a variety of shapes. For example, the second reflective electrode RM2 can be configured to have a lower portion having a flat portion and a protrusion projecting upward from one edge of the lower portion, forming an "L"-like shape in cross-sectional view. The flat lower portion can make sufficient contact with the first reflective electrode RM1, thereby effectively blocking the path of light leakage after it is emitted from the LED.

[0126] The second reflective electrode RM2 may contain a material with high reflectivity. The second reflective electrode RM2 may contain the same material as the first reflective electrode RM1, but is not limited thereto.

[0127] Since the second reflective electrode RM2 is disposed on the first reflective electrode RM1 and the second reflective electrode RM2 is in direct contact with the first reflective electrode RM1, the light extraction efficiency of the light emitted from the light-emitting element LD can be improved.

[0128] like Figure 4As shown, since the reflective electrodes RM1 and RM2 are disposed around the light-emitting element LD, the light L emitted from the light-emitting layer 220 and traveling in parallel to the lower side can be reflected by at least one of the first reflective electrode RM1 and the second reflective electrode RM2 and travel in parallel to the upper side. Here, the lower side can be the direction from the light-emitting layer 220 to the first reflective electrode RM1, and the upper side can be the direction from the light-emitting layer 220 to the second electrode 230.

[0129] Since the first reflective electrode RM1 and the second reflective electrode RM2 are arranged in direct contact with each other, the light L emitted from the light-emitting layer 220 and traveling parallel to the lower side will not be emitted through the portion between the first reflective electrode RM1 and the second reflective electrode RM2. Instead, it can be reflected by at least one of the first reflective electrode RM1 and the second reflective electrode RM2 and travel parallel to the upper side. On the other hand, when the first adhesive layer 181 is formed inside the recessed structure formed by the first reflective electrode RM1 and the second reflective electrode RM2, the first adhesive layer 181, the first reflective electrode RM1, and the second reflective electrode RM2 provide a cavity in which light travels and is reflected, which further improves the efficiency of light reflection and travel.

[0130] For example, since the first reflective electrode RM1 and the second reflective electrode RM2 are arranged in direct contact with each other, the leakage of light L emitted from the light-emitting layer 220 and traveling downwards to the outside of the reflective electrodes RM1 and RM2 without being reflected and traveling upwards can be minimized or at least reduced. Furthermore, the light extraction efficiency of the light emitted from the light-emitting element LD can be improved, and the display device 10 can achieve low power consumption, thereby reducing power consumption. Here, the first reflective electrode RM1 and the second reflective electrode RM2 can be formed in various combinations. For example, in a cross-sectional view, the first reflective electrode RM1 and the second reflective electrode RM2 can be combined to form a bowl-like shape, in which the first adhesive layer 181 can be filled, thereby forming a stable receiving structure for connecting and positioning the LED element.

[0131] Furthermore, since the planar dimensions of the first reflective electrode RM1 are larger than those of the light-emitting element LD, the light-emitting element LD and the second reflective electrode RM2 can be smoothly disposed on the first reflective electrode RM1 even if there are potential errors in the manufacturing process. Therefore, even with potential errors in the manufacturing process, the second reflective electrode RM2 can smoothly contact the first electrode 210 and the first reflective electrode RM1. In other words, the electrical connection between the light-emitting element LD and the lines (reflective electrodes, connecting electrodes, etc.) in contact with the light-emitting element LD can be smooth, and the stability of the contact process can be improved.

[0132] Pixel connection electrode 195 may be disposed on adhesive layer 180. Pixel connection electrode 195 may be formed of the same material as common connection electrode 250, but is not limited thereto.

[0133] When the display device 10 is a top-emitting type, the pixel connection electrode 195 may contain a transparent conductive material, and when the display device 10 is a bottom-emitting type, the pixel connection electrode 195 may contain a light-reflecting conductive material. The transparent conductive material may be, but is not limited to, ITO (indium tin oxide) or IZO (indium zinc oxide). The light-reflecting conductive material may be, but is not limited to, Al, silver (Ag), Au, platinum (Pt), Cu, etc. The pixel connection electrode 195 containing the light-reflecting conductive material may be a single layer containing the light-reflecting conductive material, or it may be a multilayer formed by stacking the single layers.

[0134] The second planarization layer 160 may be defined in the thickness direction (e.g., the third direction DR3) to penetrate the second planarization layer 160 and expose the first through hole TH1 of the second connection electrode 155.

[0135] The pixel connection electrode 195 can contact the second reflective electrode RM2 and be electrically connected to the first electrode 210. Through the first through-hole TH1, the pixel connection electrode 195 can contact and be electrically connected to the second connection electrode 155 exposed through the first through-hole TH1. In other words, the first electrode 210 and the second connection electrode 155 can be electrically connected to each other through the pixel connection electrode 195 and the second reflective electrode RM2.

[0136] An upper insulating layer 200 can be disposed on the pixel connection electrode 195. The upper insulating layer 200 can be disposed on the adhesive layer 180 to simultaneously cover the light-emitting element LD and the pixel connection electrode 195. The upper insulating layer 200 can have a thickness sufficient to cover both the side surface and the top surface of the light-emitting element LD.

[0137] In this disclosure, the upper insulating layer 200 is described as being formed of a single layer, but is not limited thereto. For example, the upper insulating layer 200 may be formed of two or more layers.

[0138] The upper insulating layer 200 provides a planarized surface on the transistor TR and the light-emitting element LD, and can fix the position of the light-emitting element LD.

[0139] A common connection electrode 250 may be provided on the upper insulating layer 200. The upper insulating layer 200, the adhesive layer 180 and the second planarization layer 160 may be defined in a second through-hole TH2 that penetrates the upper insulating layer 200, the adhesive layer 180 and the second planarization layer 160 in the thickness direction (e.g., the third direction DR3) and exposes the first connection electrode 151.

[0140] exist Figure 2In the second through hole TH2, the inner wall can be formed by the side surfaces of the upper insulating layer 200, the adhesive layer 180 and the second planarization layer 160, and the side surfaces of the upper insulating layer 200, the adhesive layer 180 and the second planarization layer 160 can be aligned.

[0141] However, the disclosed technology is not limited thereto, and the side surfaces of the upper insulating layer 200, the adhesive layer 180, and the second planarization layer 160 forming the inner wall of the second through hole TH2 may not be aligned. In other words, in the second through hole TH2, the upper insulating layer 200, the adhesive layer 180, and the second planarization layer 160 may have a step difference.

[0142] Through the second through-hole TH2, the common connection electrode 250 can contact and be electrically connected to the first connection electrode 151 exposed through the second through-hole TH2.

[0143] The upper insulating layer 200 may be defined with a third through-hole TH3 that penetrates the upper insulating layer 200 in the thickness direction (e.g., the third direction DR3) and exposes the light-emitting element LD. The third through-hole TH3 may expose the second electrode 230.

[0144] The common connection electrode 250 can be electrically connected to the second electrode 230 while in contact with the second electrode 230.

[0145] The second electrode 230 and the first connecting electrode 151 can be electrically connected to each other through a common connecting electrode 250.

[0146] When the display device 10 is a top-emitting type, the common connection electrode 250 may contain a transparent conductive material; and when the display device 10 is a bottom-emitting type, the common connection electrode 250 may contain a light-reflective conductive material. The transparent conductive material may be ITO (indium tin oxide) or IZO (indium zinc oxide), but is not limited to these. The light-reflective conductive material may be Al, silver (Ag), Au, platinum (Pt), Cu, etc., but is not limited to these. The common connection electrode 250 containing the light-reflective conductive material may be a single layer containing the light-reflective conductive material, or it may be a multilayer formed by stacking the single layers.

[0147] Although not shown, after patterning the common connection electrode 250, a black matrix can also be formed on the second via TH2, the upper insulating layer 200, and the common connection electrode 250. The black matrix can be set in the display area DA (see reference). Figure 1 In addition to each pixel PX (refer to) Figure 1 The entire area outside the luminescent region.

[0148] You can also add a protective layer, cover glass, etc. on the black matrix to protect the components below it.

[0149] It can be in sub-pixels SP1, SP2, and SP3 (see reference) Figure 1 In each of the subpixels SP1, SP2, and SP3, a plurality of light-emitting elements (LDs) can be provided. For example, subpixels SP1, SP2, and SP3 (see reference) can be provided. Figure 1 Each of them is provided with one or more light-emitting elements (LDs).

[0150] Therefore, when sub-pixels SP1, SP2, and SP3 (refer to...) Figure 1 When one or more of the plurality of light-emitting elements (LDs) in each of the sub-pixels SP1, SP2, and SP3 are defective, light can be emitted from the remaining additional light-emitting elements (LDs) through the corresponding sub-pixels SP1, SP2, and SP3. Alternatively, sub-pixels SP1, SP2, and SP3 (see reference) Figure 1 All of the multiple light-emitting elements LD set in the configuration can be operated as redundant light-emitting elements LED.

[0151] The following describes a method for manufacturing a display device 10 according to one embodiment. In describing the method for manufacturing the display device 10 according to one embodiment, references will be briefly described. Figures 1 to 4 The content described, or its description will be omitted.

[0152] Figures 5 to 8 A diagram illustrating the steps involved in manufacturing a display device according to one embodiment.

[0153] Reference Figure 5 The light-emitting element (LD) can be transferred onto a substrate 110 on which a buffer layer 120, a transistor TR, a gate insulating layer 130, a first planarization layer 140, a second planarization layer 160, an adhesive layer 180, connecting electrodes 151 and 155, and a first reflective electrode RM1 are disposed. The light-emitting element (LD) can be transferred onto the adhesive layer 180.

[0154] The first reflective electrode RM1 can be patterned and disposed on the second planarization layer 160.

[0155] An adhesive layer 180 can be disposed over the entire area of ​​the second planarization layer 160, while simultaneously covering the first reflective electrode RM1.

[0156] The light-emitting element LD can be transferred onto the adhesive layer 180 in the region that overlaps with the first reflective electrode RM1 in the thickness direction (e.g., third direction DR3).

[0157] After transferring the light-emitting element (LD), a lighting test can be performed to determine whether the LD is functioning correctly.

[0158] Next, refer to Figure 6By patterning the adhesive layer 180 disposed over the entire area of ​​the second planarization layer 160, a first adhesive layer 181 and a second adhesive layer 182 that are separate from each other can be formed.

[0159] When the adhesive layer 180 is patterned, the light-emitting element LD can be used as a mask. Therefore, the adhesive layer 180 can be retained in the region where the light-emitting element LD and the adhesive layer 180 overlap each other in the thickness direction (e.g., third direction DR3), and a first adhesive layer 181 can be formed.

[0160] After the adhesive layer 180 is patterned, ashing and slag removal processes can be performed, but the disclosed technology is not limited to these.

[0161] With the adhesive layer 180 removed, a portion of the first reflective electrode RM1 can be exposed to the outside of the light-emitting element LD.

[0162] The second adhesive layer 182 can be formed on the exterior of the first reflective electrode RM1. The adhesive layer 180 can be patterned until a portion of the first reflective electrode RM1 that does not overlap with the light-emitting element LD is exposed. Therefore, the upper surface of the second adhesive layer 182 and the upper surface of the first reflective electrode RM1 can have the same height.

[0163] Next, refer to Figure 7 The patterning process is performed such that a second reflective electrode RM2 is disposed on the first reflective electrode RM1 exposed between the first adhesive layer 181 and the second adhesive layer 182. The second reflective electrode RM2 can be deposited to cover both the first reflective electrode RM1 and the second adhesive layer 182, and then patterned, but the disclosed technology is not limited thereto.

[0164] The patterned second reflective electrode RM2 can be configured to surround the first adhesive layer 181 and contact the first electrode 210. The second reflective electrode RM2 can contact the side surface of the first electrode 210, but the disclosed technology is not limited thereto.

[0165] Next, refer to Figure 8 The pixel connection electrode 195, the upper insulating layer 200, and the common connection electrode 250 can be formed sequentially.

[0166] First, by patterning the second planarization layer 160, a first through-hole TH1 can be formed to expose the second connection electrode 155.

[0167] Next, the pixel connection electrode 195 can be formed by patterning the pixel connection electrode 195 on the second planarization layer 160. One end of the pixel connection electrode 195 can contact the second reflective electrode RM2, and the other end can be disposed inside the first via TH1 and can contact the second connection electrode 155.

[0168] Next, an upper insulating layer 200 can be formed on the pixel connection electrode 195 and the light-emitting element LD. The upper insulating layer 200 can be disposed over the entire area of ​​the second planarization layer 160, covering both the pixel connection electrode 195 and the light-emitting element LD, but the disclosed technology is not limited thereto.

[0169] Next, a second through-hole TH2 and a third through-hole TH3 can be formed. The second through-hole TH2 penetrates the upper insulating layer 200, the adhesive layer 180 and the second planarization layer 160 in the thickness direction (e.g., the third direction DR3) and exposes the first connecting electrode 151. The third through-hole TH3 penetrates the upper insulating layer 200 in the thickness direction (e.g., the third direction DR3) and exposes the light-emitting element LD.

[0170] Next, the common connection electrode 250 can be formed by patterning the common connection electrode 250 on the upper insulating layer 200. One end of the common connection electrode 250 can be disposed inside the second through hole TH2 and in contact with the first connection electrode 151, and the other end can be disposed inside the third through hole TH3 and in contact with the second electrode 230.

[0171] In this way, since the steps of transferring the light-emitting element (LD) and forming the conductive layer (pixel connection electrode 195, etc.) are performed separately, the stability of each process can be improved, and the stability of the contact process between the light-emitting element (LD) and the conductive layer (pixel connection electrode 195, etc.) can also be improved. Therefore, process efficiency can be improved and process costs can be reduced. In addition, production energy consumption can be reduced.

[0172] Other embodiments of this disclosure will be described below. Among the components included in these other embodiments are those already referenced. Figures 1 to 8 Content that is substantially the same will be given the same reference numerals, and redundant content may be briefly described or omitted.

[0173] Figure 9 This is a cross-sectional view of a display device according to another embodiment.

[0174] Reference Figure 9 In the display device 10_1 according to this embodiment, the pixel connection electrode 195 (see reference) can be omitted. Figure 2 ).

[0175] The display device 10_1 may include a first reflective electrode RM1_1. The first reflective electrode RM1_1 may be provided for each of the light-emitting elements LD.

[0176] One end of the first reflective electrode RM1_1 can be disposed below the light-emitting element LD and in contact with the second reflective electrode RM2, and the other end can be disposed inside the first through-hole TH1 defined by the second planarization layer 160 and in contact with the second connecting electrode 155. The second reflective electrode RM2 can be in contact with the first electrode 210.

[0177] Therefore, the first electrode 210 and the second connecting electrode 155 can be electrically connected to each other through the first reflective electrode RM1_1 and the second reflective electrode RM2.

[0178] In the same scenario, since the first reflective electrode RM1_1 and the second reflective electrode RM2 are in direct contact with each other, the light emitted from the light-emitting element LD can be reflected more smoothly upwards, thus improving the light extraction efficiency of the light-emitting element LD. Furthermore, the first reflective electrode RM1_1 can extend from below the light-emitting element LD to one side, reaching the position above it where it overlaps with the transistor TR, and can be connected to the transistor TR through the contact hole TH1. This eliminates the need for additional processes to form pixel electrodes while enhancing the effect of outward light reflection.

[0179] Figure 10 This is a cross-sectional view of a display device according to yet another implementation scheme. Figure 10 This is an enlarged view of the periphery of the light-emitting element (LD).

[0180] Reference Figure 10 The display device 10_2 according to this embodiment may include a first reflective electrode RM1_2, and at least a portion of the surface of the first reflective electrode RM1_2 may be formed as an uneven structure, or may have a rough surface pattern, pit pattern or textured structure to scatter light.

[0181] A portion of the upper surface of the first reflective electrode RM1_2 may be formed as an uneven structure. The upper surface of the first reflective electrode RM1_2 may refer to the surface opposite to the first adhesive layer 181. The region of the upper surface of the first reflective electrode RM1_2 that overlaps with the first adhesive layer 181 in the thickness direction (e.g., the third direction DR3) may be formed by the uneven structure.

[0182] In the same case, since the first reflective electrode RM1_2 and the second reflective electrode RM2 are in direct contact with each other, the light emitted from the light-emitting element LD can be reflected more smoothly upwards. In addition, the light extraction efficiency of the light-emitting element LD can be improved.

[0183] Furthermore, since the upper surface of the first reflective electrode RM1_2 is formed with an uneven structure, the light emitted from the light-emitting element LD can be reflected more smoothly upwards, and the light extraction efficiency of the light-emitting element LD can be improved.

[0184] Figure 11 This is a cross-sectional view of a display device according to yet another implementation scheme. Figure 11 This is an enlarged view of the periphery of the light-emitting element (LD).

[0185] Reference Figure 11 In the display device 10_3 according to this embodiment, the first adhesive layer 181 can expose a portion of the lower surface of the first electrode 210. Here, the lower surface of the first electrode 210 can refer to the surface opposite to the first adhesive layer 181. The second reflective electrode RM2 can contact the side surface and the lower surface of the first electrode 210.

[0186] A portion of the lower surface of the first electrode 210 exposed by the first adhesive layer 181 may be disposed around the edge of the lower surface of the first electrode 210. The side surface of the first electrode 210 may protrude further outward than the side surface of the first adhesive layer 181.

[0187] like Figure 6 As shown, in the process of patterning the adhesive layer 180, the patterning process can be performed as an isotropic etching process. In this case, the side surface of the first adhesive layer 181 can be etched and can be positioned more inwardly than the side surface of the first electrode 210.

[0188] Subsequently, a second reflective electrode RM2 can be formed. The second reflective electrode RM2 can have a high step coverage, and it can be disposed not only on the side surface of the first electrode 210 but also on the lower surface of the first electrode 210 exposed through the first adhesive layer 181. The second reflective electrode RM2 can be in direct contact with both the side and lower surfaces of the first electrode 210. Furthermore, in this case, the second reflective electrode RM2 also contacts the side surface of the first adhesive layer 181, a portion of the lower surface of the first electrode 210, the side surface of the first electrode 210, and a portion of the passivation film 240. The second reflective electrode RM2 can also cover the steps at the boundaries between different portions to form a bent shape. In this case, the combination of the first reflective electrode RM1 and the second reflective electrode RM2 can further improve the light reflection efficiency.

[0189] In the same case, since the first reflective electrode RM1 and the second reflective electrode RM2 are in direct contact with each other, the light emitted from the light-emitting element LD can be reflected more smoothly upwards. In addition, the light extraction efficiency of the light-emitting element LD can be improved.

[0190] Furthermore, since the second reflective electrode RM2 is in contact with the side and lower surfaces of the first electrode 210, the contact area is increased, and the contact between the second reflective electrode RM2 and the first electrode 210 can be made more stable.

[0191] Figure 12 This is a cross-sectional view of a display device according to yet another implementation scheme. Figure 12 This is an enlarged view of the periphery of the light-emitting element (LD).

[0192] Reference Figure 12 The display device 10_4 according to this embodiment may include a passivation film 240_4, and this embodiment is consistent with... Figure 11 The difference in the implementation scheme is that the passivation film 240_4 covers the side surface of the first electrode 210.

[0193] The passivation film 240_4 extends further while covering the second electrode 230 and the light-emitting layer 220, and may cover the side surface of the first electrode 210. The passivation film 240_4 may cover the entire area of ​​the side surface of the first electrode 210, but is not limited to this. The passivation film 240_4 may be in direct contact with the side surface of the first electrode 210. In this case, the second reflective electrode RM2 may be electrically connected to the first electrode 210 only by contacting a portion of the lower surface of the first electrode 210.

[0194] A passivation film 240_4 can be provided between the second reflective electrode RM2 and the first electrode 210.

[0195] The second reflective electrode RM2 and the first electrode 210 can contact each other through the lower surface of the first electrode 210 exposed by the first adhesive layer 181, and can be electrically connected to each other.

[0196] In the same case, since the first reflective electrode RM1 and the second reflective electrode RM2 are in direct contact with each other, the light emitted from the light-emitting element LD can be reflected more smoothly upwards. In addition, the light extraction efficiency of the light-emitting element LD can be improved.

[0197] Furthermore, since the passivation film 240_4 covers the entire side surface of the first electrode 210, the light-emitting layer 220, and the second electrode 230, leakage current can be prevented more smoothly and unnecessary short circuits with the surrounding conductive layer can be suppressed or prevented.

[0198] Figure 13 This is a cross-sectional view of a display device according to yet another implementation scheme. Figure 14 for Figure 13 A magnified view of the Q2 region.

[0199] Reference Figure 13 and Figure 14 The display device 10_5 according to this embodiment may include a light-emitting element LD_5, and the light-emitting element LD_5 may have a flip-chip structure. The light-emitting element LD_5 may be formed from a flip chip.

[0200] The first reflective electrode RM1_5 may include an eleventh reflective electrode RM11 and a twelfth reflective electrode RM12, which are separate from each other. The eleventh reflective electrode RM11 and the twelfth reflective electrode RM12 may be insulated from each other.

[0201] The second reflective electrode RM2_5 may include a twenty-first reflective electrode RM21 and a twenty-second reflective electrode RM22 that are separate from each other. The twenty-first reflective electrode RM21 and the twenty-second reflective electrode RM22 may be insulated from each other. In other words, in embodiments of this disclosure, the first reflective electrode RM1_5 may include two independent and insulated sub-parts, and the second reflective electrode RM2_5 may also include two independent and insulated sub-parts. Such an electrode structure can help form effective electrical connections for flip chips.

[0202] The twenty-first reflective electrode RM21 can be disposed on the eleventh reflective electrode RM11 and can be in direct contact with the eleventh reflective electrode RM11. The twenty-second reflective electrode RM22 can be disposed on the twelfth reflective electrode RM12 and can be in direct contact with the twelfth reflective electrode RM12.

[0203] The light-emitting element LD_5 may include a first electrode 210_5, a light-emitting layer 220, a semiconductor insulating layer 225, and a passivation film 240.

[0204] The first electrode 210_5 may include an eleventh electrode 211 and a twelfth electrode 212 that are separate from each other. The eleventh electrode 211 and the twelfth electrode 212 may be insulated from each other.

[0205] The eleventh electrode 211 and the twelfth electrode 212 can be disposed on the same layer. The eleventh electrode 211 and the twelfth electrode 212 can be disposed on the first adhesive layer 181.

[0206] The eleventh electrode 211 and the twenty-first reflective electrode RM21 can contact each other and be electrically connected to each other, as can the twelfth electrode 212 and the twenty-second reflective electrode RM22.

[0207] The eleventh electrode 211 and the first semiconductor layer 221 can be in contact with each other and electrically connected to each other. The twelfth electrode 212 and the second semiconductor layer 223 can be in contact with each other and electrically connected to each other. The eleventh electrode 211 can be an anode electrode, and the twelfth electrode 212 can be a cathode electrode, but the disclosed technology is not limited thereto.

[0208] Therefore, it can be omitted in the light-emitting element LD_5. Figure 2 The second electrode 230 in, and Figure 2 The function of the second electrode 230 can be performed by the twelfth electrode 212.

[0209] The light-emitting layer 220 can be disposed on the eleventh electrode 211 and the twelfth electrode 212. The twelfth electrode 212 may include a protrusion protruding toward the second semiconductor layer 223. More specifically, the twelfth electrode 212 may include a protrusion disposed between the light-emitting layer 220 and the first adhesive layer 181 and protruding toward the second semiconductor layer 223. With this configuration, the twelfth electrode 212 can contact and be electrically connected to the second semiconductor layer 223.

[0210] The semiconductor insulating layer 225 may be disposed between the twelfth electrode 212 and the first semiconductor layer 221, and between the twelfth electrode 212 and the active layer 222. The semiconductor insulating layer 225 may contain inorganic insulating materials, but is not limited thereto.

[0211] The semiconductor insulating layer 225 can prevent short circuits between the twelfth electrode 212 and the first semiconductor layer 221, as well as between the twelfth electrode 212 and the active layer 222.

[0212] Pixel connection electrode 195 can contact and be electrically connected to the twenty-first reflective electrode RM21, and common connection electrode 250 can contact and be electrically connected to the twenty-second reflective electrode RM22.

[0213] The common connection electrode 250 can contact the first connection electrode 151 through the second through-hole TH2_5 defined by the second planarization layer 160 and the second adhesive layer 182.

[0214] The common connection electrode 250 may be disposed on the same layer as the pixel connection electrode 195, but the disclosed technology is not limited thereto.

[0215] The upper insulating layer 200 can be disposed on the pixel connection electrode 195, the common connection electrode 250 and the light-emitting element LD_5.

[0216] In the same case, since the first reflective electrode RM1_5 and the second reflective electrode RM2_5 are in direct contact with each other, the light emitted from the light-emitting element LD_5 can be reflected more smoothly upwards. In addition, the light extraction efficiency of the light-emitting element LD_5 can be improved.

[0217] Figure 15 This is a cross-sectional view of a display device according to yet another implementation scheme. Figure 15 This is an enlarged view of the periphery of the light-emitting element (LD).

[0218] Reference Figure 15 The display device 10_6 according to this embodiment may include a first reflective electrode RM1_6 having different thicknesses depending on the region.

[0219] The first reflective electrode RM1_6, having different thicknesses, may include a first region AA1 and a second region AA2. The thickness of the first region AA1 may be greater than the thickness of the second region AA2. Here, the thickness of the first region AA1 and the thickness of the second region AA2 may refer to their width in the thickness direction (e.g., the third direction DR3).

[0220] The first region AA1 may overlap with the first adhesive layer 181 in the thickness direction (e.g., the third direction DR3). The second region AA2 may not overlap with the first adhesive layer 181 in the thickness direction (e.g., the third direction DR3).

[0221] The second region AA2 can be positioned around the first region AA1. The second region AA2 can be positioned to surround the first region AA1, but the disclosed technology is not limited thereto.

[0222] Return here and refer to Figure 6 In the process of patterning the adhesive layer 180 to expose the first reflective electrode RM1_6, a portion of the first reflective electrode RM1_6 that does not overlap with the adhesive layer 180 can be further etched in the thickness direction and can be formed to have a thinner thickness than the remaining other regions that overlap with the adhesive layer 180.

[0223] In the same case, since the first reflective electrode RM1_6 and the second reflective electrode RM2 are in direct contact with each other, the light emitted from the light-emitting element LD can be reflected more smoothly upwards. In addition, the light extraction efficiency of the light-emitting element LD can be improved.

[0224] The display device according to various embodiments of this disclosure can be described as follows.

[0225] One embodiment is a display device, comprising: a substrate; a transistor disposed on the substrate; a planarization layer disposed on the transistor; a first reflective electrode disposed on the planarization layer; a first adhesive layer disposed on the first reflective electrode; a light-emitting element disposed on the first adhesive layer; and a second reflective electrode in contact with the light-emitting element, wherein the first reflective electrode and the second reflective electrode can be in direct contact with each other.

[0226] According to various embodiments of this disclosure, a light-emitting element may be disposed on the upper surface of the first adhesive layer, and a second reflective electrode may be disposed on the side surface of the first adhesive layer.

[0227] According to various embodiments of this disclosure, the light-emitting element can be in direct contact with the upper surface of the first adhesive layer, and the second reflective electrode can be in direct contact with the side surface of the first adhesive layer.

[0228] According to various embodiments of this disclosure, the second reflective electrode may surround the first adhesive layer.

[0229] According to various embodiments of this disclosure, the second reflective electrode may be disposed on the upper surface of the first reflective electrode.

[0230] According to various embodiments of this disclosure, the display device may further include a second adhesive layer separate from the first adhesive layer and disposed on the side surface of the first reflective electrode, and the second reflective electrode may be in direct contact with the first reflective electrode exposed between the first adhesive layer and the second adhesive layer.

[0231] According to various embodiments of this disclosure, the height of the upper surface of the second adhesive layer may be the same as the height of the upper surface of the first reflective electrode.

[0232] According to various embodiments of this disclosure, the first adhesive layer and the second adhesive layer may contain the same material.

[0233] According to various embodiments of this disclosure, the light-emitting element may include a first electrode, a light-emitting layer, and a second electrode stacked in sequence, and a second reflective electrode may be in contact with the first electrode.

[0234] According to various embodiments of this disclosure, the second reflective electrode can be in direct contact with the side surface of the first electrode.

[0235] According to various embodiments of this disclosure, a first reflective electrode has a first thickness in a first region and a second thickness in a second region, and the thickness of the first reflective electrode in the first region is greater than the thickness in the second region to form a stepped region, and a second reflective electrode is disposed in the stepped region to contact the side surface of the first electrode.

[0236] According to various embodiments of this disclosure, the first reflective electrode includes a first sub-reflective electrode and a second sub-reflective electrode that are insulated from each other, and the second reflective electrode includes a first sub-reflective electrode and a second sub-reflective electrode that are insulated from each other, and the sub-reflective electrodes of the first reflective electrode and the second reflective electrode are in electrical contact with each other.

[0237] According to various embodiments of this disclosure, the first adhesive layer can expose a portion of the lower surface of the first electrode, and the second reflective electrode can directly contact the lower surface of the first electrode exposed through the first adhesive layer.

[0238] According to various embodiments of this disclosure, the display device may further include a pixel connection electrode disposed on a planarization layer, and the pixel connection electrode may have one end in contact with the second reflective electrode and the other end electrically connected to the transistor.

[0239] According to various embodiments of this disclosure, the first reflective electrode may have one end in contact with the second reflective electrode and the other end disposed inside a via defined by a planarization layer and electrically connected to the transistor.

[0240] According to various embodiments of this disclosure, the planar dimensions of the first adhesive layer may be smaller than the planar dimensions of the first reflective electrode, and the entire area of ​​the first adhesive layer may overlap with the first reflective electrode in the thickness direction.

[0241] According to various embodiments of this disclosure, the planar dimensions of the light-emitting element can be smaller than the planar dimensions of the first reflective electrode, and the entire area of ​​the light-emitting element can overlap with the first reflective electrode in the thickness direction.

[0242] According to various embodiments of this disclosure, the upper surface of the first reflective electrode may have a raised or recessed pattern in the region overlapping with the first adhesive layer.

[0243] Another embodiment is a display device, which includes: a substrate; a transistor disposed on the substrate; a planarization layer disposed on the transistor; a first reflective electrode disposed on the planarization layer; a first adhesive layer disposed on the upper surface of the first reflective electrode; a light-emitting element disposed on the first adhesive layer; and a second reflective electrode disposed on the upper surface of the first reflective electrode, wherein the second reflective electrode may be disposed around the first adhesive layer.

[0244] According to various embodiments of this disclosure, the second reflective electrode can be in contact with the light-emitting element and in direct contact with the first reflective electrode.

[0245] According to various embodiments of this disclosure, the second reflective electrode can be in direct contact with the side surface of the first adhesive layer.

[0246] According to various embodiments of this disclosure, the light-emitting element can be in direct contact with the upper surface of the first adhesive layer.

[0247] According to various embodiments of this disclosure, a display device includes: a substrate; at least one transistor and a light-emitting element disposed above the substrate; a planarization layer disposed on the transistor; a light-emitting element receiving member located on the planarization layer; and wherein the light-emitting element receiving member surrounds the bottom surface and at least a portion of the side surface of the light-emitting element to receive the light-emitting element, and the light-emitting element receiving member has reflective properties.

[0248] According to various embodiments of this disclosure, the light-emitting element receiving member forms a bowl-shaped structure to receive the light-emitting element.

[0249] According to various embodiments of this disclosure, the receiving member includes a reflective metal portion disposed around the bottom surface and at least a portion of the side surface of the light-emitting element, and an adhesive portion disposed within the reflective metal portion.

[0250] According to various embodiments of this disclosure, the reflective metal portion includes a first reflective metal portion disposed below the bottom surface of the light-emitting element, and a second reflective metal portion disposed around at least a portion of the side surface of the light-emitting element, the adhesive portion being located between the first reflective metal portion and the bottom surface of the light-emitting element, and the second metal portion contacting at least one electrode of the light-emitting element.

[0251] According to various embodiments of this disclosure, a portion of the first reflective metal portion and a portion of the second reflective metal portion are in direct contact with each other in a region outside the region where the light-emitting element is disposed, so as to sufficiently reflect the light emitted by the light-emitting element.

[0252] Embodiments of this disclosure have been described with reference to the accompanying drawings. Those skilled in the art will recognize that this disclosure may be embodied in other specific forms without departing from the spirit or essential characteristics of this disclosure. The described embodiments should be considered in all respects only as illustrative and not restrictive. Therefore, the scope of this disclosure is indicated by the appended claims rather than by the foregoing description. All variations falling within the equivalent meaning and scope of the claims should be included within the scope of this disclosure.

[0253] Figure Labels

[0254] 10: Display device

[0255] 110: Substrate

[0256] TR: Transistor

[0257] 180: Adhesive layer

[0258] 181: First adhesive layer

[0259] 182: Second adhesive layer

[0260] LD: Light-emitting element

[0261] 210: First electrode

[0262] 220: Emissive layer

[0263] 230: Second electrode

[0264] 240: Passivation film

[0265] 200: Upper insulation layer

[0266] RM1: First reflective electrode

[0267] RM2: Second reflective electrode

[0268] TH: Through hole

Claims

1. A display device, comprising: substrate; Transistors disposed on the substrate; A planarization layer disposed on the transistor; A first reflective electrode is disposed on the planarization layer; A first adhesive layer disposed on the first reflective electrode; A light-emitting element disposed on the first adhesive layer; as well as The second reflective electrode that is in contact with the light-emitting element The first reflective electrode and the second reflective electrode are in direct contact with each other.

2. The display device according to claim 1, in, The light-emitting element is disposed on the upper surface of the first adhesive layer, and The second reflective electrode is disposed on the side surface of the first adhesive layer.

3. The display device according to claim 2, in, The light-emitting element is in direct contact with the upper surface of the first adhesive layer, and The second reflective electrode is in direct contact with the side surface of the first adhesive layer.

4. The display device according to claim 3, in, The second reflective electrode surrounds the first adhesive layer.

5. The display device according to claim 1, in, The second reflective electrode is disposed on the upper surface of the first reflective electrode.

6. The display device according to claim 5, further comprising: A second adhesive layer, separate from the first adhesive layer and disposed on the side surface of the first reflective electrode, The second reflective electrode is in direct contact with the first reflective electrode exposed between the first adhesive layer and the second adhesive layer.

7. The display device according to claim 6, in, The height of the upper surface of the second adhesive layer is the same as the height of the upper surface of the first reflective electrode.

8. The display device according to claim 7, in, The first adhesive layer and the second adhesive layer contain the same material.

9. The display device according to claim 1, in, The light-emitting element includes a first electrode, a light-emitting layer, and a second electrode stacked sequentially, and The second reflective electrode is in contact with the first electrode.

10. The display device according to claim 9, in, The second reflective electrode is in direct contact with the side surface of the first electrode.

11. The display device according to claim 9, in, The first reflective electrode has a first thickness in a first region and a second thickness in a second region, and the thickness of the first reflective electrode in the first region is greater than its thickness in the second region to form a stepped region, and the second reflective electrode is disposed in the stepped region to contact the side surface of the first electrode.

12. The display device according to claim 9, in, The first reflective electrode includes a first sub-reflective electrode (RM11) and a second sub-reflective electrode (RM12) that are insulated from each other, and the second reflective electrode includes a first sub-reflective electrode (RM21) and a second sub-reflective electrode (RM22) that are insulated from each other, and the sub-reflective electrodes of the first reflective electrode and the second reflective electrode are in electrical contact with each other.

13. The display device according to claim 9, in, The first adhesive layer exposes a portion of the lower surface of the first electrode, and The second reflective electrode is in direct contact with the lower surface of the first electrode exposed through the first adhesive layer.

14. The display device according to claim 9, further comprising: Pixel connection electrodes disposed on the planarization layer The pixel connection electrode has one end that contacts the second reflective electrode and the other end that is electrically connected to the transistor.

15. The display device according to claim 9, in, The first reflective electrode has one end that contacts the second reflective electrode and is disposed inside a via defined by the planarization layer and electrically connected to the other end of the transistor.

16. The display device according to claim 1, in, The planar dimensions of the first adhesive layer are smaller than the planar dimensions of the first reflective electrode, and Wherein, the entire area of ​​the first adhesive layer overlaps with the first reflective electrode in the thickness direction.

17. The display device according to claim 16, in, The planar dimension of the light-emitting element is smaller than the planar dimension of the first reflective electrode, and The entire area of ​​the light-emitting element overlaps with the first reflective electrode in the thickness direction.

18. The display device according to claim 1, in, In the region overlapping with the first adhesive layer, the upper surface of the first reflective electrode has a raised or recessed pattern.

19. A display device, comprising: substrate; Transistors disposed on the substrate; A planarization layer disposed on the transistor; A first reflective electrode is disposed on the planarization layer; A first adhesive layer disposed on the upper surface of the first reflective electrode; A light-emitting element disposed on the first adhesive layer; as well as A second reflective electrode is disposed on the upper surface of the first reflective electrode. The second reflective electrode is configured to surround at least a portion of the side surface of the light-emitting element.

20. The display device according to claim 19, in, The second reflective electrode is in contact with the light-emitting element and in direct contact with the first reflective electrode.

21. The display device according to claim 19, in, The second reflective electrode is in direct contact with the side surface of the first adhesive layer.

22. The display device according to claim 21, in, The light-emitting element is in direct contact with the upper surface of the first adhesive layer.

23. A display device, comprising: substrate; At least one transistor and a light-emitting element are disposed above the substrate; A planarization layer disposed on the transistor; The light-emitting element housing component located on the planarization layer, and The light-emitting element receiving member surrounds the bottom surface and at least a portion of the side surface of the light-emitting element to receive the light-emitting element, and the light-emitting element receiving member has reflective properties.

24. The display device according to claim 23, wherein the light-emitting element receiving member is formed in a bowl shape to receive the light-emitting element.

25. The display device according to claim 23 or 24, wherein the receiving member comprises a reflective metal portion disposed around the bottom surface and at least a portion of the side surface of the light-emitting element, and an adhesive portion disposed within the reflective metal portion.

26. The display device according to claim 25, in, The reflective metal portion includes a first reflective metal portion (RM1) disposed below the bottom surface of the light-emitting element, and a second reflective metal portion (RM2) disposed around at least a portion of the side surface of the light-emitting element, and the adhesive portion is located between the first reflective metal portion and the bottom surface of the light-emitting element. The second metal part contacts at least one electrode of the light-emitting element.

27. The display device according to claim 26, in, A portion of the first reflective metal portion and a portion of the second reflective metal portion are in direct contact with each other in a region outside the area where the light-emitting element is disposed, so as to fully reflect the light emitted by the light-emitting element.

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