Electronic device and method of manufacturing the same

Abstract

This invention provides an electronic device and a method for manufacturing the same. One embodiment of the electronic device may include a display element layer comprising a light-emitting element and an aging layer disposed on the light-emitting element. The light-emitting element may include a first electrode, a second electrode disposed on the first electrode, a light-emitting layer comprising quantum dots disposed between the first and second electrodes, and an electron transport region comprising a metal oxide disposed between the first and second electrodes. The aging layer may include a porous membrane comprising a polymer or ceramic and a coating film comprising an organic acid. Accordingly, the electronic device of this embodiment can exhibit excellent display quality and excellent reliability.

Description

Technical Field

[0001] This invention relates to an electronic device comprising an aging layer including a porous membrane and a coating membrane, and a method for manufacturing the electronic device. Background Technology

[0002] Multimedia electronic devices such as televisions, mobile phones, tablet computers, navigation devices, game consoles, and wearable devices may include display modules for displaying images. These display modules utilize so-called self-emissive light-emitting elements, which cause luminescent materials, including organic compounds or quantum dots, to emit light in a light-emitting layer arranged between facing electrodes to achieve display. To improve the quality of electronic devices, it is necessary to improve the luminous efficiency and lifespan of the light-emitting elements. Summary of the Invention

[0003] The purpose of this invention is to provide an electronic device that exhibits excellent display quality and excellent reliability.

[0004] Another object of the present invention is to provide a method for manufacturing an electronic device with excellent manufacturing efficiency.

[0005] One embodiment provides an electronic device, in which the electronic device includes a display module for providing an image, the display module includes a display element layer containing a light-emitting element and an aging layer disposed on the light-emitting element, wherein the light-emitting element includes a first electrode, a second electrode disposed on the first electrode, a light-emitting layer containing quantum dots disposed between the first electrode and the second electrode, and an electron transport region containing a metal oxide disposed between the first electrode and the second electrode, wherein the aging layer includes: a porous membrane containing a polymer or ceramic and disposed on the light-emitting element; and a coating film containing an organic acid and disposed on the porous membrane.

[0006] The thickness of the porous membrane can be greater than 5 μm and less than 100 μm.

[0007] The polymer may include polydimethlysiloxane, and the ceramic may include silicon oxycarbide.

[0008] The coating film may also include a polymer matrix.

[0009] The organic acid may include at least one of methacrylic acid, acrylic acid, and citric acid.

[0010] The organic acid may include a carboxyl group.

[0011] The aging layer can be directly applied to the light-emitting element.

[0012] The display module may also include an encapsulation layer disposed on the aging layer.

[0013] The metal oxide may include at least one of SnO, SnO2, CuGaO2, Ga2O3, Cu2O, SrCu2O2, SrTiO3, CuAlO2, Ta2O5, NiO, BaSnO3, and TiO2, or may be represented by the following chemical formula M-1.

[0014] [Chemical Formula M-1] Zn (1-q) Me q O In the chemical formula M-1, q is 0 or more and 0.5 or less, and Me is Li, Be, Na, Mg, Al, K, Ca, Ti, V, Cr, Mn, Fe, Co, Ni, Cu, Ga, Ge, Rb, Sr, Zr, Nb, Mo, Ru, Pd, Ag, In, Sn(II), Sn(IV), Sb or Ba.

[0015] The light-emitting element may further include a hole transport region, one of which, or the electron transport region, may be arranged between the first electrode and the light-emitting layer, and the other may be arranged between the light-emitting layer and the second electrode.

[0016] The electronic device may also include at least one of a processor, a memory, and a power module.

[0017] One embodiment provides a method for manufacturing an electronic device, comprising the following steps: preparing a light-emitting element; forming an aging layer; and depositing the aging layer on the light-emitting element, wherein the step of forming the aging layer includes the following steps: preparing a porous membrane; depositing a resin composition containing an organic acid on the porous membrane; and irradiating the resin composition with light to form a coating film, wherein the light-emitting element includes a first electrode, a second electrode disposed on the first electrode, a light-emitting layer containing quantum dots disposed between the first electrode and the second electrode, and an electron transport region containing a metal oxide disposed between the first electrode and the second electrode, and the porous membrane comprises a polymer or ceramic.

[0018] The method for manufacturing the electronic device may further include the following steps: after the step of setting the aging layer, setting an encapsulation layer on the aging layer.

[0019] The aging layer can be bonded to the light-emitting element through a lamination process.

[0020] The resin composition may also include a polymer matrix.

[0021] The resin composition can be prepared by inkjet printing or dispensing.

[0022] An electronic device according to one embodiment exhibits excellent display quality and excellent reliability because it includes an aging layer disposed on a light-emitting element, and the aging layer includes a porous membrane comprising a polymer or ceramic and a coating film comprising an organic acid.

[0023] One embodiment of the method for manufacturing an electronic device exhibits excellent manufacturing efficiency because it includes a step of depositing an aging layer on a light-emitting element after the step of forming an aging layer. Attached Figure Description

[0024] Figure 1 This is a block diagram of an electronic device according to one embodiment.

[0025] Figure 2 This is a diagram illustrating an electronic device according to various embodiments.

[0026] Figure 3 This is a perspective view of an electronic device according to an embodiment.

[0027] Figure 4 This is an exploded perspective view showing an embodiment of an electronic device.

[0028] Figure 5 It shows the corresponding Figure 4 A cross-sectional view of the section along line I-I'.

[0029] Figure 6 This is a plan view showing a portion of an electronic device according to one embodiment.

[0030] Figure 7 It shows the corresponding Figure 6 A cross-sectional view of the section along line II-II'.

[0031] Figure 8a This is a cross-sectional view showing a light-emitting element according to an embodiment.

[0032] Figure 8b This is a cross-sectional view showing a light-emitting element according to an embodiment.

[0033] Figure 8c This is a cross-sectional view showing a light-emitting element according to an embodiment.

[0034] Figure 8d This is a cross-sectional view showing a light-emitting element according to an embodiment.

[0035] Figure 9a This is a flowchart illustrating a method for manufacturing an electronic device according to an embodiment.

[0036] Figure 9b This is a flowchart illustrating a method for manufacturing an electronic device according to an embodiment.

[0037] Figure 10a This is a diagram schematically illustrating the manufacturing steps of an electronic device according to an embodiment.

[0038] Figure 10b This is a diagram schematically illustrating the manufacturing steps of an electronic device according to an embodiment.

[0039] Figure 10c This is a diagram schematically illustrating the manufacturing steps of an electronic device according to an embodiment.

[0040] Figure 10d This is a diagram schematically illustrating the manufacturing steps of an electronic device according to an embodiment.

[0041] Explanation of reference numerals in the attached figures EA: Electronic Devices ED: Light-emitting element AGL: Aging layer POM: Porous membrane AC: Coated film MO: Metal oxide QD-C: Quantum Dot Detailed Implementation

[0042] In this specification, when it is mentioned that a certain component (or region, layer, part, etc.) is "above", "connected" to, or "combined" with another component, it means that it can be directly arranged on or directly connected / combined with another component, or a third component can be arranged between them.

[0043] The same reference numerals refer to the same constituent elements. Furthermore, in the drawings, the thickness, proportions, and dimensions of the constituent elements are exaggerated for the purpose of effective illustration of the technical content. "And / or" includes all but one combination of the relevant constituent elements that can be defined.

[0044] The terms "first," "second," etc., can be used to describe various constituent elements, but the constituent elements should not be limited by the terms. The terms are used only for the purpose of distinguishing one constituent element, component, region, layer, or part from other constituent elements, components, regions, layers, or parts. For example, without departing from the scope of the invention, a first constituent element, a first component, a first region, a first layer, or a first part may be named a second constituent element, a second component, a second region, a second layer, or a second part; similarly, a second constituent element, a second component, a second region, a second layer, or a second part may also be named a first constituent element, a first component, a first region, a first layer, or a first part. Singular expressions include plural expressions unless the context clearly indicates a different meaning.

[0045] Furthermore, terms such as "below," "lower side," "above," and "upper side" are used to describe the relationships between the constituent elements shown in the accompanying drawings. These terms are relative concepts and are explained based on the directions indicated in the accompanying drawings.

[0046] Terms such as “including” or “having” should be understood to mean the presence of the features, figures, steps, operations, constituent elements, components, or combinations thereof described in the specification, rather than precluding the existence or additional possibility of one or more other features, figures, steps, operations, constituent elements, components, or combinations thereof.

[0047] Unless otherwise defined, all terms (including technical and scientific terms) used in this specification shall have the same meaning as commonly understood by one of ordinary skill in the art to which this invention pertains. Furthermore, terms identical to those defined in commonly used dictionaries shall be interpreted as having the same meaning as in the context of the relevant art, and shall not be construed as having overly idealistic or formal meanings unless explicitly defined.

[0048] In the following description, embodiments of the present invention will be illustrated with reference to the accompanying drawings.

[0049] Figure 1 This is a block diagram of an electronic device according to one embodiment. The electronic device EA may include a display module DM. The electronic device EA may also include at least one of a processor PR, a memory MR, and a power module PM. (See also...) Figure 1 According to one embodiment, the electronic device EA may include a display module DM, a processor PR, a memory MR, and a power module PM.

[0050] The processor PR may include at least one of a central processing unit (CPU), an application processor (AP), a graphics processing unit (GPU), a communication processor (CP), an image signal processor (ISP), and a controller.

[0051] The memory MR can store the data information required for the operation of the processor PR or the display module DM. If the processor PR executes the application stored in the memory MR, the image data signal and / or input control signal can be transmitted to the display module DM, and the display module DM can process the received signal and output the image information through the display screen.

[0052] The power module PM may include a power supply module such as a power adapter or battery device, and a power conversion module that generates the power required for the operation of the electronic device EA by converting the power supplied by the power supply module.

[0053] At least one of the various components of the electronic device EA described above may be included within the display device according to the embodiments described later. Furthermore, a portion of an individual module functionally included within a single module may also be included within the display device, while another portion may be provided independently of the display device. For example, the display device may include a display module DM, and the processor PR, memory MR, and power module PM may be provided in the form of other devices within the electronic device EA besides the display device.

[0054] Figure 2 This is a schematic diagram of an electronic device according to various embodiments. (Refer to...) Figure 2 The various electronic devices that can be used with the display device according to the embodiments may include not only image display electronic devices (smartphone EA_1a, tablet computer EA_1b, laptop computer EA_1c, television (TV) EA_1d, desktop display EA_1e, etc.), but also wearable electronic devices that include a display module (such as smart glasses EA_2a, head-mounted display EA_2b, smartwatch EA_2c, etc.), and vehicle electronic devices EA_3 that include a display module (such as vehicle dashboard, center console, center information display (CID) arranged on the instrument panel, room mirror display, etc.).

[0055] Figure 3This is a perspective view of an electronic device according to an embodiment. Figure 3 The electronic device EA shown in one embodiment can be a device activated by an electrical signal. For example, the electronic device EA can be a personal computer, laptop computer, personal digital terminal, game console, portable electronic device, television, monitor, external billboard, car navigation system, or wearable device, but the embodiment is not limited thereto. Figure 3 In the illustration, the electronic device EA is exemplarily shown as a television.

[0056] Electronic device EA can provide an image IM to a user via a display surface EA-IS. The display surface EA-IS can be parallel to a plane defined by a first direction axis DR1 and a second direction axis DR2. Electronic device EA can display the image IM facing a third direction axis DR3. The image IM can include not only moving images but also still images. Although in Figure 3 The illustration shows an electronic device EA equipped with a planar display surface EA-IS, but the embodiments are not limited thereto. For example, the electronic device EA may also include a curved display surface or a three-dimensional display surface. A three-dimensional display surface may also include multiple display areas indicating different directions from each other.

[0057] The directions indicated by the first direction axis DR1, the second direction axis DR2, and the third direction axis DR3 as described in this specification can be relative concepts and can be transformed into other directions. Furthermore, the directions indicated by the first direction axis DR1, the second direction axis DR2, and the third direction axis DR3 can be described as a first direction, a second direction, and a third direction, and the same reference numerals can be used.

[0058] In this specification, the first direction axis DR1 and the second direction axis DR2 may be orthogonal to each other, and the third direction axis DR3 may be the normal direction with respect to the plane defined by the first direction axis DR1 and the second direction axis DR2. The thickness direction of the electronic device EA may be a direction parallel to the third direction axis DR3. The thickness direction of the electronic device EA may use the same reference numerals as the third direction axis DR3. The front surface (or upper surface) and the rear surface (or lower surface) may be opposite to each other on the third direction axis DR3, and the normal direction of each of the front surface (or upper surface) and the rear surface (or lower surface) may be parallel to the third direction axis DR3. The front surface (or upper surface) refers to the surface adjacent to the display surface EA-IS, and the rear surface (or lower surface) refers to the surface separated from the display surface EA-IS. The upper side may indicate a direction close to the display surface EA-IS, and the lower side may indicate a direction away from the display surface EA-IS.

[0059] In this specification, "section" refers to a surface parallel to the thickness direction DR3. "Plane" refers to a surface perpendicular to the thickness direction DR3 and parallel to the plane defined by the first direction axis DR1 and the second direction axis DR2.

[0060] In this specification, the overlap of one component with another means an overlap on a plane. Furthermore, one component and another are not limited to having the same area and the same shape, but also include cases with different areas and / or different shapes.

[0061] The electronic device EA can sense external inputs applied from the outside. External inputs can include various forms of input provided from outside the electronic device EA. For example, external inputs can include not only contact via a part of the user's body (e.g., a hand), but also external inputs applied when the device is close to or adjacent to it at a predetermined distance (e.g., hovering). Furthermore, external inputs can take various forms such as force, pressure, temperature, and light.

[0062] The display surface EA-IS may include a display area EA-DA and a non-display area EA-NDA. The electronic device EA can display the image IM through the display area EA-DA.

[0063] The display area EA-DA can be an area activated by an electrical signal. The display area EA-DA can be an area that displays an image IM and is capable of sensing various forms of external input.

[0064] The display area EA-DA may include a plane defined by a first direction axis DR1 and a second direction axis DR2. Unlike the illustrated case, the display area EA-DA may also include a curved surface that curves from at least one side of the plane defined by the first direction axis DR1 and the second direction axis DR2. For example, the display area EA-DA may further include four curved surfaces that curve from at least two (e.g., four) side surfaces of the plane defined by the first direction axis DR1 and the second direction axis DR2, respectively.

[0065] One embodiment of the electronic device EA can be flexible. "Flexible" can refer to the property of being able to bend, and can include all structures from those that can be completely folded to those that can be bent to the nanometer level. For example, the electronic device EA can be a rigid device. Conversely, the electronic device EA can also be a foldable device.

[0066] The non-display area EA-NDA can have color. The non-display area EA-NDA can be an area adjacent to the display area EA-DA. The non-display area EA-NDA can surround the display area EA-DA. Therefore, the shape of the display area EA-DA can be substantially defined by the non-display area EA-NDA. However, Figure 3 As an example only, the non-display area EA-NDA may also be arranged adjacent to only one side of the display area EA-DA, and may also be omitted. The display area EA-DA may be provided in various shapes and is not limited to a particular embodiment.

[0067] Figure 4 This is an exploded perspective view showing an electronic device according to an embodiment. (Refer to...) Figure 4 The electronic device EA may include a display module DM. Furthermore, the electronic device EA may also include a window component WM and a housing HAU.

[0068] A window component WM can be arranged on the display module DM. The window component WM can cover the entire outer side of the electronic device EA. The window component WM can include a transmissive area TA and a bezel area BZA. The front surface of the window component WM, including the transmissive area TA and the bezel area BZA, can correspond to the front surface of the electronic device EA. The transmissive area TA can correspond to Figure 3 The electronic device EA shown has a display area EA-DA, and a border area BZA that can correspond to... Figure 3 The non-display area EA-NDA of the electronic device EA shown.

[0069] The transmissive region TA can be an optically transparent region. The border region BZA can be a region with lower light transmittance relative to the transmissive region TA. The border region BZA can be colored. The border region BZA can be adjacent to the transmissive region TA and can surround the transmissive region TA. The border region BZA can define the shape of the transmissive region TA. However, the embodiment is not limited to the illustrated case; the border region BZA can also be arranged adjacent to only one side of the transmissive region TA, and a portion of the border region BZA can also be omitted.

[0070] The housing HAU may comprise a material with relatively high rigidity. For example, the housing HAU may comprise a frame and / or plate made of glass, plastic, or metal. Multiple frames and / or plates may be provided. The housing HAU provides a receiving space. The display module DM can be housed within the receiving space to protect the display module DM from external impacts.

[0071] The display module DM can be activated according to an electrical signal and provide an image IM (In-Image). Figure 3 The display module DM can be activated to display the electronic device EA in the display area EA-DA ( ). Figure 3 IM displays images (or videos) Figure 3 The display module DM can define an active area DM-AA and a peripheral area DM-NAA.

[0072] The active region DM-AA can be a region activated by an electrical signal. Unit pixels PXU can be arranged within the active region DM-AA. Pixels can include transistors (not shown) and light-emitting elements ED-1, ED-2, ED-3 (…). Figure 7 The peripheral area DM-NAA can be a region located adjacent to at least one side of the active area DM-AA. Circuitry or wiring for driving the active area DM-AA can be arranged within the peripheral area DM-NAA.

[0073] Figure 5 It shows the corresponding Figure 4 A cross-sectional view of the section along line I-I'. Figure 5 It may be a cross-sectional view showing a display module DM according to one embodiment.

[0074] The display module DM may include a display panel DP and an optical layer PP disposed on the display panel DP. The display panel DP may include a base layer BS, a circuit layer DP-CL disposed on the base layer BS, a display element layer DP-EL disposed on the circuit layer DP-CL, an aging layer AGL disposed on the display element layer DP-EL, and an encapsulation layer TFE disposed on the aging layer AGL.

[0075] A display panel (DP) can be a component that substantially generates an image. A display panel (DP) can be a light-emitting display panel. For example, a display panel (DP) can be a quantum dot light-emitting display panel that includes quantum dot light-emitting elements.

[0076] The base layer BS can be a component that provides the base surface for arranging the circuit layer DP-CL. The base layer BS can be a rigid substrate or a flexible substrate that can be bent, folded, rolled, etc. The base layer BS can be a glass substrate, a metal substrate, or a polymer substrate, etc. However, the embodiments are not limited to these; the base layer BS can be an inorganic layer, an organic layer, or a composite material layer.

[0077] The DP-CL circuit layer can be disposed on the base layer BS. The DP-CL circuit layer may include insulating layers, semiconductor patterns, conductive patterns, and signal lines. After forming the insulating layer, semiconductor layer, and conductive layer on the base layer BS through coating, deposition, or other methods, the insulating layer, semiconductor layer, and conductive layer can be selectively patterned through multiple photolithography processes. Subsequently, semiconductor patterns, conductive patterns, and signal lines included in the DP-CL circuit layer can be formed.

[0078] The display element layer DP-EL can be disposed on the circuit layer DP-CL. The display element layer DP-EL may include the pixel definition film PDL (described later). Figure 7 ) and the first light-emitting element ED-1, the second light-emitting element ED-2 and the third light-emitting element ED-3 ( Figure 7 For example, the display element layer DP-EL may include organic light-emitting materials, inorganic light-emitting materials, organic-inorganic light-emitting materials, quantum dots, and quantum rods. For example, the display element layer DP-EL may include micro-LEDs or nano-LEDs. More specifically, the display element layer DP-EL may include quantum dots.

[0079] An aging layer (AGL) can be deposited on the display element layer (DP-EL). The aging layer (AGL) can be deposited on the display element layer (DP-EL) to contribute to a positive aging effect. The aging layer (AGL) may include a porous film (POM) and a coating film (AC). The porous film (POM) can be deposited on the display element layer (DP-EL). The coating film (AC) can be deposited on the porous film (POM). A more detailed explanation of the aging layer (AGL) will follow.

[0080] The encapsulation layer TFE can be disposed on the aging layer AGL. The encapsulation layer TFE can protect the display element layer DP-EL and the aging layer AGL from foreign matter such as moisture, oxygen, and dust particles. The encapsulation layer TFE may include at least one inorganic layer. The encapsulation layer TFE may include a structure in which inorganic layers, organic layers, and inorganic layers are stacked in sequence.

[0081] An optical layer PP can be disposed on the display panel DP to control reflected light originating from the display panel DP caused by external light. For example, the optical layer PP may include a polarizing layer or a color filter layer. Alternatively, unlike the case shown in the figures, the optical layer PP may be omitted.

[0082] Although not shown, the display module DM may also include an input sensing layer disposed between the display panel DP and the optical layer PP. The input sensing layer can sense external inputs and convert them into input signals, and can provide the input signals to the display panel DP. For example, the input sensing layer may be a touch sensing layer that senses touch. The input sensing layer can recognize direct touch by the user, indirect touch by the user, direct touch by an object, or indirect touch by an object, etc.

[0083] The input sensing layer can sense at least one of the location and intensity (pressure) of a touch applied from the outside. In one embodiment, the input sensing layer can have various structures or be made of various materials, and is not limited to a particular embodiment. For example, the input sensing layer can sense external input capacitively. The display panel (DP) can receive the input signal from the input sensing layer and can generate an image corresponding to the input signal.

[0084] Figure 6 This is a schematic plan view of the active region DM-AA according to one embodiment. Figure 6 The diagram schematically illustrates a plane comprising three pixel regions PXA-R, PXA-G, and PXA-B, and a light-blocking region NPXA. A unit pixel PXU may include a first pixel region PXA-R, a second pixel region PXA-G, a third pixel region PXA-B, and a light-blocking region NPXA. Unit pixels PXU can be repeatedly arranged in... Figure 4 The entire active region DM-AA is shown.

[0085] At least one aperture HL can be arranged between unit pixels PXU. The aperture HL can be an opening for controlling electron injection or hole injection. However, this is only exemplary, and the function of the aperture HL is not limited to this. For example, the aperture HL can be used to adjust the display module DM ( Figure 4 The opening within the pressure chamber. The size of the orifice HL can vary depending on its function.

[0086] An aperture HL can be arranged between the second pixel regions PXA-G. On the first direction axis DR1, one aperture HL can be arranged between two adjacent second pixel regions PXA-G. However, this is merely exemplary, and the arrangement of the aperture HL is not limited thereto.

[0087] A light-shielding region NPXA can be arranged around the first pixel region PXA-R, the second pixel region PXA-G, and the third pixel region PXA-B. The light-shielding region NPXA can define the boundaries of the first pixel region PXA-R, the second pixel region PXA-G, and the third pixel region PXA-B. The light-shielding region NPXA can surround the first pixel region PXA-R, the second pixel region PXA-G, and the third pixel region PXA-B. A structure (e.g., a pixel definition film PDL) to prevent color mixing of the first pixel region PXA-R, the second pixel region PXA-G, and the third pixel region PXA-B can be arranged within the light-shielding region NPXA. Figure 7 ))wait.

[0088] Pixel regions PXA-R, PXA-G, and PXA-B can emit light from individual light-emitting elements ED-1, ED-2, and ED-3 ( Figure 7 The region of light produced in ( ). In Figure 6 The illustration shows a scenario where the first pixel region PXA-R, the second pixel region PXA-G, and the third pixel region PXA-B have the same shape and area on a plane, but the embodiment is not limited to this. At least two of the first pixel regions PXA-R, the second pixel regions PXA-G, and the third pixel region PXA-B may have different areas. The areas of the first pixel regions PXA-R, the second pixel regions PXA-G, and the third pixel region PXA-B can be set according to the color of the emitted light. The pixel region emitting blue light, being the primary color, can have the narrowest area. The area can represent the area on a plane.

[0089] exist Figure 6 The diagram illustrates a scenario where each of the first pixel regions PXA-R, the second pixel regions PXA-G, and the third pixel region PXA-B is a quadrilateral with two curved sides facing each other on a plane. Alternatively, each of the first pixel regions PXA-R, the second pixel regions PXA-G, and the third pixel region PXA-B can be a polygonal shape such as a rhombus or a pentagon. Alternatively, each of the first pixel regions PXA-R, the second pixel regions PXA-G, and the third pixel region PXA-B can have a quadrilateral shape with rounded corners. Furthermore, the first pixel regions PXA-R, the second pixel regions PXA-G, and the third pixel region PXA-B can also have different shapes on a plane.

[0090] exist Figure 6The diagram illustrates a scenario where the first pixel region PXA-R, the second pixel region PXA-G, and the third pixel region PXA-B are arranged in the same row. However, this is merely an example, and the arrangement of these three pixel regions can be varied. For instance, the second pixel region PXA-G can be arranged in the first row, and the first pixel region PXA-R and the third pixel region PXA-B can be arranged in the second row.

[0091] Of the three pixel regions PXA-R, PXA-G, and PXA-B, one can emit a first light, another can emit a second light different from the first, and the last can emit a third light different from both the first and second. For example, the first pixel region PXA-R can emit red light, the second pixel region PXA-G can emit green light, and the third pixel region PXA-B can emit blue light. The first pixel region PXA-R can be called the red pixel region, the second pixel region PXA-G can be called the green pixel region, and the third pixel region PXA-B can be called the blue pixel region.

[0092] Figure 7 It shows the corresponding Figure 6 A cross-sectional view of the section along line II-II'. Figure 7 It may be a cross-sectional view showing the configuration of a display module DM according to one embodiment.

[0093] Reference Figure 7 The base layer BS may be a single layer or multiple layers. For example, the base layer BS may include a three-layer structure of a polymer resin layer, an adhesive layer, and another polymer resin layer. For example, the polymer resin layer may include a polyimide resin. Furthermore, the polymer resin layer may include at least one of the following: acrylate resin, methacrylate resin, polyisoprene resin, vinyl resin, epoxy resin, urethane resin, cellulose resin, siloxane resin, polyamide resin, and perylene resin. In this specification, "~~" resins refer to resins containing the functional group "~~". For example, polyimide resins refer to resins containing polyimide functional groups.

[0094] The circuit layer DP-CL may include an insulating layer, a semiconductor layer, a conductive layer, and signal lines. The circuit layer DP-CL may include multiple transistors (not shown). Each of the transistors (not shown) may include a control electrode, an input electrode, and an output electrode. For example, the circuit layer DP-CL may include switching transistors and driving transistors for driving the light-emitting elements ED-1, ED-2, and ED-3 of the display element layer DP-EL.

[0095] The display element layer DP-EL may include a first light-emitting element ED-1, a second light-emitting element ED-2, and a third light-emitting element ED-3, as well as a pixel definition film PDL. The pixel definition film PDL may have openings OH.

[0096] The Pixel Definition Film (PDL) can define pixel regions PXA-R, PXA-G, and PXA-B. The PDL can be used to divide the pixel regions PXA-R, PXA-G, PXA-B, and the light-blocking region NPXA.

[0097] Pixel-Defining Film (PDL) can be formed using polymer resins. For example, the PDL can be formed using resins including polyacrylate or polyimide. Furthermore, the PDL can be formed to include inorganic materials in addition to polymer resins. Additionally, the PDL can be formed to include light-absorbing materials, or it can be formed to include black pigments or black dyes. Forming a PDL containing black pigments or black dyes can achieve a black pixel-defining film. When forming the PDL, carbon black or similar materials can be used as the black pigment or dye, but the embodiments are not limited to this.

[0098] Furthermore, pixel-defining films (PDLs) can be formed using inorganic materials. For example, pixel-defining films (PDLs) can be formed using silicon nitride (SiN). x ), silicon dioxide (SiO) x ), silicon oxynitride (SiO) x N y Inorganic substances such as ) are formed.

[0099] Each of the light-emitting elements ED-1, ED-2, and ED-3 may include a first electrode EL1, light-emitting layers EML-R, EML-G, and EML-B disposed on the first electrode EL1, a second electrode EL2 disposed on the light-emitting layers EML-R, EML-G, and EML-B, hole transport regions HTR-1, HTR-2, and HTR-3 disposed between the first electrode EL1 and the second electrode EL2, and electron transport regions ETR-1, ETR-2, and ETR-3 disposed between the first electrode EL1 and the second electrode EL2. The light-emitting layers EML-R, EML-G, and EML-B may be disposed between the electron transport regions ETR-1, ETR-2, and ETR-3 and the hole transport regions HTR-1, HTR-2, and HTR-3.

[0100] Each of the light-emitting elements ED-1, ED-2, and ED-3 may include a first electrode EL1, hole transport regions HTR-1, HTR-2, and HTR-3 disposed on the first electrode EL1, light-emitting layers EML-R, EML-G, and EML-B disposed on the hole transport regions HTR-1, HTR-2, and HTR-3, electron transport regions ETR-1, ETR-2, and ETR-3 disposed on the light-emitting layers EML-R, EML-G, and EML-B, and a second electrode EL2 disposed on the electron transport regions ETR-1, ETR-2, and ETR-3. The hole transport regions HTR-1, HTR-2, and HTR-3 may be disposed between the first electrode EL1 and the light-emitting layers EML-R, EML-G, and EML-B, and the electron transport regions ETR-1, ETR-2, and ETR-3 may be disposed between the light-emitting layers EML-R, EML-G, and EML-B and the second electrode EL2.

[0101] However, this is merely an example, and the stacked structure of the light-emitting elements is not limited thereto. For example, each of the light-emitting elements ED-1, ED-2, and ED-3 may include a first electrode EL1, electron transport regions ETR-1, ETR-2, and ETR-3 disposed on the first electrode EL1, light-emitting layers EML-R, EML-G, and EML-B disposed on the electron transport regions ETR-1, ETR-2, and ETR-3, hole transport regions HTR-1, HTR-2, and HTR-3 disposed on the light-emitting layers EML-R, EML-G, and EML-B, and a second electrode EL2 disposed on the hole transport regions HTR-1, HTR-2, and HTR-3. Electron transport regions ETR-1, ETR-2, and ETR-3 can be arranged between the first electrode EL1 and the light-emitting layers EML-R, EML-G, and EML-B, and hole transport regions HTR-1, HTR-2, and HTR-3 can be arranged between the light-emitting layers EML-R, EML-G, and EML-B and the second electrode EL2.

[0102] At least a portion of the first electrode EL1 may be exposed from the opening OH of the pixel-defining film PDL. The first electrode EL1 may be conductive. The first electrode EL1 may be formed using a metallic material, a metal alloy, or a conductive compound. The first electrode EL1 may be a cathode or an anode. However, the embodiments are not limited thereto. Furthermore, the first electrode EL1 may be a pixel electrode. The first electrode EL1 may be a transmissive electrode, a semi-transmissive electrode, or a reflective electrode. The first electrode EL1 may include at least one selected from Ag, Mg, Cu, Al, Pt, Pd, Au, Ni, Nd, Ir, Cr, Li, Ca, LiF, Mo, Ti, W, In, Sn, and Zn, two or more compounds selected from them, mixtures of two or more of them, or oxides thereof.

[0103] When the first electrode EL1 is a transmissive electrode, it may include a transparent metal oxide (e.g., indium tin oxide (ITO), indium zinc oxide (IZO), zinc oxide (ZnO), indium tin zinc oxide (ITZO), etc.). When the first electrode EL1 is a semi-transmissive electrode or a reflective electrode, it may include Ag, Mg, Cu, Al, Pt, Pd, Au, Ni, Nd, Ir, Cr, Li, Ca, LiF, Mo, Ti, W, or compounds or mixtures thereof (e.g., a mixture of Ag and Mg) or a material having a multilayer structure including two or more selected from them (e.g., LiF / Ca (a stacked structure of LiF and Ca) or LiF / Al (a stacked structure of LiF and Al)). Alternatively, the first electrode EL1 can be a multilayer structure, comprising a reflective or semi-transparent film formed from the aforementioned materials and a transparent conductive film formed from indium tin oxide (ITO), indium zinc oxide (IZO), zinc oxide (ZnO), or indium tin zinc oxide (ITZO). For example, the first electrode EL1 can have a three-layer structure of ITO / Ag / ITO, but is not limited thereto. Furthermore, the first electrode EL1 can include the aforementioned metallic materials, a combination of two or more metallic materials selected from the aforementioned metallic materials, or oxides of the aforementioned metallic materials, but the embodiments are not limited thereto. The thickness of the first electrode EL1 can be approximately 700 nm. Approximately 10,000 For example, the thickness of the first electrode EL1 can be approximately 1000 mm. Approximately 3000 .

[0104] The second electrode EL2 can be a common electrode. The second electrode EL2 can be an anode or a cathode, but the embodiments are not limited thereto. For example, if the first electrode EL1 is an anode, the second electrode EL2 can be a cathode; if the first electrode EL1 is a cathode, the second electrode EL2 can be an anode. The second electrode EL2 can include at least one selected from Ag, Mg, Cu, Al, Pt, Pd, Au, Ni, Nd, Ir, Cr, Li, Ca, LiF, Mo, Ti, W, In, Sn, and Zn, two or more compounds selected from these, mixtures of two or more of these, or oxides thereof.

[0105] The second electrode EL2 can be a transmissive electrode, a semi-transmissive electrode, or a reflective electrode. When the second electrode EL2 is a transmissive electrode, it can be formed using transparent metal oxides (e.g., indium tin oxide (ITO), indium zinc oxide (IZO), zinc oxide (ZnO), indium tin zinc oxide (ITZO)).

[0106] When the second electrode EL2 is a semi-transparent or reflective electrode, the second electrode EL2 may include Ag, Mg, Cu, Al, Pt, Pd, Au, Ni, Nd, Ir, Cr, Li, Ca, LiF, Mo, Ti, Yb, W, or compounds or mixtures thereof (e.g., AgMg, AgYb, or MgYb) or materials having a multilayer structure including two or more selected from them (e.g., LiF / Ca (a stacked structure of LiF and Ca) or LiF / Al (a stacked structure of LiF and Al)). Alternatively, the second electrode EL2 may be a multilayer structure comprising a reflective or semi-transparent film formed from the aforementioned materials and a transparent conductive film formed using indium tin oxide (ITO), indium zinc oxide (IZO), zinc oxide (ZnO), indium tin zinc oxide (ITZO), etc. For example, the second electrode EL2 may include the aforementioned metal material, a combination of two or more metal materials selected from the aforementioned metal materials, or an oxide of the aforementioned metal material, etc.

[0107] Although not shown, the second electrode EL2 can be connected to the auxiliary electrode. If the second electrode EL2 is connected to the auxiliary electrode, the resistance of the second electrode EL2 can be reduced.

[0108] A light-emitting layer EML-R, EML-G, and EML-B may be disposed between the first electrode EL1 and the second electrode EL2. The first light-emitting element ED-1 may include the first light-emitting layer EML-R, the second light-emitting element ED-2 may include the second light-emitting layer EML-G, and the third light-emitting element ED-3 may include the third light-emitting layer EML-B. The first light-emitting layer EML-R may include a first quantum dot QD-C1. The second light-emitting layer EML-G may include a second quantum dot QD-C2. The third light-emitting layer EML-B may include a third quantum dot QD-C3.

[0109] Each of the first quantum dot QD-C1, the second quantum dot QD-C2, and the third quantum dot QD-C3 can be stacked to form a layer. Figure 7 The example illustrates a case where quantum dots QD-C1, QD-C2, and QD-C3 with circular cross-sections are arranged to form approximately two layers, but the embodiment is not limited to this. For example, the arrangement of quantum dots QD-C1, QD-C2, and QD-C3 can vary depending on the thickness of the light-emitting layers EML-R, EML-G, and EML-B, the shape of the quantum dots QD-C1, QD-C2, and QD-C3 included in the light-emitting layers EML-R, EML-G, and EML-B, the average diameter of the quantum dots QD-C1, QD-C2, and QD-C3, etc. Specifically, in the light-emitting layers EML-R, EML-G, and EML-B, quantum dots QD-C1, QD-C2, and QD-C3 can be aligned to form a single layer by being adjacent to each other, or can be aligned to form multiple layers such as two or three layers.

[0110] The first quantum dot QD-C1 of the first light-emitting element ED-1 can emit red light. The second quantum dot QD-C2 of the second light-emitting element ED-2 can emit green light. The third quantum dot QD-C3 of the third light-emitting element ED-3 can emit blue light. For example, each of the quantum dots QD-C1, QD-C2, and QD-C3 may include a core (not shown) and a shell (not shown) surrounding the core. Accordingly, each of the quantum dots QD-C1, QD-C2, and QD-C3 may include a core-shell structure. The cores of the quantum dots QD-C1, QD-C2, and QD-C3 may include different substances from each other. Alternatively, the cores of the quantum dots QD-C1, QD-C2, and QD-C3 may include the same substance. Or, two cores selected from the cores of the quantum dots QD-C1, QD-C2, and QD-C3 may include the same substance, and the remaining core may include a different substance.

[0111] exist Figure 7 The illustration shows a scenario where the diameters of each of the first quantum dot QD-C1, the second quantum dot QD-C2, and the third quantum dot QD-C3 are similar, but the embodiment is not limited to this. The diameters of each of the first quantum dot QD-C1, the second quantum dot QD-C2, and the third quantum dot QD-C3 can be different from each other. For example, compared to the first quantum dot QD-C1 of the first light-emitting element ED-1 and the second quantum dot QD-C2 of the second light-emitting element ED-2, which emits light in a relatively long wavelength region, the average diameter of the third quantum dot QD-C3 of the third light-emitting element ED-3, which emits light in a relatively short wavelength region, can be relatively small. The average diameter represents the arithmetic mean of the particle sizes of the multiple quantum dots. The particle size of a quantum dot can be the average width of the quantum dot particles in a cross-section.

[0112] Hole transport regions HTR-1, HTR-2, and HTR-3 can be arranged between the first electrode EL1 and the light-emitting layers EML-R, EML-G, and EML-B. The hole transport regions HTR-1, HTR-2, and HTR-3 of the first light-emitting element ED-1, the second light-emitting element ED-2, and the third light-emitting element ED-3 can be arranged at the opening OH and thus divided. Alternatively, the hole transport regions HTR-1, HTR-2, and HTR-3 of the first light-emitting element ED-1, the second light-emitting element ED-2, and the third light-emitting element ED-3 can also be provided as a common layer. The hole transport regions HTR-1, HTR-2, and HTR-3 provided as a common layer can overlap with the pixel regions PXA-R, PXA-G, PXA-B and the light-shielding region NPXA. The first light-emitting element ED-1 may include a first hole transport region HTR-1, the second light-emitting element ED-2 may include a second hole transport region HTR-2, and the third light-emitting element ED-3 may include a third hole transport region HTR-3.

[0113] Each of the first hole transport region HTR-1, the second hole transport region HTR-2, and the third hole transport region HTR-3 can have a single-layer structure formed using a single material, a single-layer structure formed using multiple different materials, or a multi-layer structure formed using multiple different materials. For example, the thickness of each of the first hole transport region HTR-1, the second hole transport region HTR-2, and the third hole transport region HTR-3 can be approximately 50 mm. To approximately 15,000 The thickness of each of the first hole transport region HTR-1, the second hole transport region HTR-2, and the third hole transport region HTR-3 can be approximately 100. Approximately 10,000 For example, it could be about 100 To approximately 5000 .

[0114] The first hole transport region HTR-1, the second hole transport region HTR-2, and the third hole transport region HTR-3 may also include known hole injection materials and / or known hole transport materials. For example, the first hole transport region HTR-1, the second hole transport region HTR-2, and the third hole transport region HTR-3 may include phthalocyanine compounds such as copper phthalocyanine, N... 1 N 1' -([1,1'-biphenyl]-4,4'-diyl)bis(N) 1 -Phenyl-N 4 N 4' (-di-m-tolylphenyl-1,4-diamine) (DNTPD: N 1 N 1' -([1,1'-biphenyl]-4,4'-diyl)bis(N 1 -phenyl-N 4 N 4'-di-m-tolylbenzene-1,4-diamine), 4,4',4''-[tris(3-methylphenyl)phenylamino]triphenylamine (m-MTDATA: 4,4',4"-[tris(3-methylphenyl)phenylamino]triphenylamine), 4,4',4''-tris(N,N-diphenylamino)triphenylamine (TDATA: 4,4',4"-Tris(N,N-diphenylamino)triphenylamine), 4,4',4''-tris[N-(2-naphthyl)-N- [2-TNATA: 4,4',4"-tris[N-(2-naphthyl)-N-phenylamino]-triphenylamine], poly(3,4-ethylenedioxythiophene) / poly(4-styrenesulfonate) (PEDOT / PSS: Poly(3,4-ethylenedioxythiophene) / Poly(4-styrenesulfonate)), polyaniline / dodecylbenzenesulfonic acid (PANI / DBSA: Polyaniline / Dodecylbenzenesulfonic acid) triphenylamine, polyaniline / camphorsulfonic acid (PANI / CSA), polyaniline / poly(4-styrenesulfonate) (PANI / PSS), N,N'-di(naphthalene-1-yl)-N,N'-diphenyl-benzidine (NPB), triphenylamine-containing polyetherketone (TPAPEK), 4-isopropyl-4'-methyldiphenyliodonium [tetra(pentafluorophenyl)borate] (4-Isopropyl-4'-methyldiphenyliodonium) [Tetrakis(pentafluorophenyl)borate]), dipyrazino[2,3-f:2',3'-h]quinoxaline-2,3,6,7,10,11-hexacarbonitrile, etc.

[0115] Furthermore, the first hole transport region HTR-1, the second hole transport region HTR-2, and the third hole transport region HTR-3 may include carbazole derivatives such as N-phenylcarbazole and polyvinylcarbazole, fluorene derivatives, and substances such as N,N'-bis(3-methylphenyl)-N,N'-diphenyl-[1,1'-biphenyl]-4,4'-diamine (TPD: N,N'-bis(3-methylphenyl)-N,N'-diphenyl-[1,1'-biphenyl]-4,4'-diamine), 4,4'- Triphenylamine derivatives such as 4''-tris(N-carbazolyl)triphenylamine (TCTA: 4,4',4"-tris(N-carbazolyl)triphenylamine), N,N'-di(naphthalene-1-yl)-N,N'-diphenyl-benzidine (NPB: N,N'-di(naphthalene-1-yl)-N,N'-diphenyl-benzidine), and 4,4'-cyclohexylbis[N,N-bis(4-methylphenyl)aniline] (TAPC: 4,4′-Cyclohexylidene bis[N,N-bis(4-methylphenyl)benzenamine]), 4,4'-bis[N,N'-(3-tolyl)amino]-3,3'-dimethylbiphenyl (HMTPD: 4,4'-Bis[N,N'-(3-tolyl)amino]-3,3'-dimethylbiphenyl), 9-(4-tert-butylphenyl)-3,6-bis(triphenylsilyl)-9H-carbazole (CzSi: 9-(4-tert-Butylphenyl)-3,6-bis(tri) Examples of carbazoles include phenylsilyl-9H-carbazole (CCP: 9-phenyl-9H-3,9'-bicarbazole), 1,3-bis(N-carbazolyl)benzene (mCP: 1,3-Bis(N-carbazolyl)benzene), and 1,3-bis(1,8-dimethyl-9H-carbazol-9-yl)benzene (mDCP: 1,3-bis(1,8-dimethyl-9H-carbazol-9-yl)benzene).

[0116] Electron transport regions ETR-1, ETR-2, and ETR-3 can be disposed between the light-emitting layers EML-R, EML-G, and EML-B and the second electrode EL2. In one embodiment, the electron transport regions ETR-1, ETR-2, and ETR-3 may include a metal oxide (MO). Figures 8a to 8d For metal oxides MO ( ). Figures 8a to 8d(This will be explained in more detail later.)

[0117] The electron transport regions ETR-1, ETR-2, and ETR-3 of the first light-emitting element ED-1, the second light-emitting element ED-2, and the third light-emitting element ED-3 can be arranged and divided at the opening OH. Alternatively, the electron transport regions ETR-1, ETR-2, and ETR-3 of the first light-emitting element ED-1, the second light-emitting element ED-2, and the third light-emitting element ED-3 can also be provided as a common layer. The electron transport regions ETR-1, ETR-2, and ETR-3 provided as a common layer can overlap with the pixel regions PXA-R, PXA-G, PXA-B, and the light-shielding region NPXA. The first light-emitting element ED-1 may include the first electron transport region ETR-1, the second light-emitting element ED-2 may include the second electron transport region ETR-2, and the third light-emitting element ED-3 may include the third electron transport region ETR-3.

[0118] Each of the first electron transport region ETR-1, the second electron transport region ETR-2, and the third electron transport region ETR-3 may have a single-layer structure formed using a single material, a single-layer structure formed using multiple different materials, or a multi-layer structure including multiple layers formed using multiple different materials. For example, the thickness of each of the first electron transport region ETR-1, the second electron transport region ETR-2, and the third electron transport region ETR-3 may be approximately 1000 mm. Approximately 1500 .

[0119] The first electron transport region ETR-1, the second electron transport region ETR-2, and the third electron transport region ETR-3 may also include known electron-injecting substances and / or known electron transport substances. For example, the first electron transport region ETR-1, the second electron transport region ETR-2, and the third electron transport region ETR-3 may contain anthracene compounds. Or, for example, the first electron transport region ETR-1, the second electron transport region ETR-2, and the third electron transport region ETR-3 may include tris(8-hydroxyquinolinato)aluminum (Alq3), 1,3,5-tri[(3-pyridyl)-phen-3-yl]benzene, 2,4,6-tris(3'-(pyridyl)biphenyl-3-yl)-1,3,5-triazine (2,4,6-tris... (3'-(pyridin-3-yl)biphenyl-3-yl)-1,3,5-triazine), 2-(4-(N-phenylbenzimidazol-1-yl)phenyl)-9,10-dinapteranthracene (2-(4-(N-phenylbenzoimidazol-1-yl)phenyl)-9,10-dinaphthylanthracene), 1,3,5-tri(1-phenyl-1H-benzo[d]imidazol-2-yl)benzene (TPBi: 1,3,5-Tri(1-phenyl-1H-benzo[ d]imidazol-2-yl)benzene), 2,9-dimethyl-4,7-diphenyl-1,10-phenanthroline (BCP: 2,9-Dimethyl-4,7-diphenyl-1,10-phenanthroline), 4,7-diphenyl-1,10-phenanthroline (Bphen: 4,7-Diphenyl-1,10-phenanthroline), 3-(4-biphenyl)-4-phenyl-5-tert-butylphenyl-1,2,4-triazole (TAZ: 3-(4-Biphenylyl)-4- phenyl-5-tert-butylphenyl-1,2,4-triazole), 4-(naphthalen-1-yl)-3,5-diphenyl-4H-1,2,4-triazole (NTAZ: 4-(Naphthalen-1-yl)-3,5-diphenyl-4H-1,2,4-triazole), 2-(4-biphenyl)-5-(4-tert-butylphenyl)-1,3,4-oxadiazole (tBu-PBD: 2-(4-Biphenylyl)-5-(4-tert-butylphenyl)-1,3,4-oxadiazole, bis(2-methyl-8-hydroxyquinoline-N1,O8)-(1,1'-biphenyl-4-hydroxy)aluminum (BAlq: Bis(2-methyl-8-quinolinolato-N1,O8)-(1,1'-Biphenyl-4-olato)aluminum), bis(benzoquinoline-10-hydroxy)beryllium (Bebq2: berylliumbis(benzoquinolin-10-olate)), 9,10-di(naphthalene-2-yl)anthracene (AND: 9,10-di(naphthalene-2-yl)anthracene), 1,3-bis[3,5-di(pyridin-3-yl)phenyl]benzene (BmPyPhB: 1,3-Bis[3,5-di(pyridin-3-yl)phenyl]benzene), and mixtures thereof. Alternatively, the first electron transport region ETR-1, the second electron transport region ETR-2, and the third electron transport region ETR-3 may include 2,9-dimethyl-4,7-diphenyl-1,10-phenanthroline (BCP: 2,9-dimethyl-4,7-diphenyl-1,10-phenanthroline), diphenyl(4-(triphenylsilyl)phenyl)phosphine oxide (TSPO1: diphenyl(4-(triphenylsilyl)phenyl)phosphine oxide), and 4,7-diphenyl-1,10-phenanthroline (Bphen: 4,7-diphenyl-1,10-phenanthroline), etc.

[0120] The aging layer AGL can be disposed on the light-emitting elements ED-1, ED-2, and ED-3 to facilitate a positive aging effect. Accordingly, an electronic device EA including an aging layer AGL according to one embodiment is described. Figure 3 It can exhibit excellent display quality and excellent reliability.

[0121] In this specification, the phrase "a component is directly arranged / provided / formed on another component" indicates that a third component is arranged / provided / formed between the two components. That is, "a component is directly arranged / provided / formed on another component" indicates a situation where the two components are in contact.

[0122] The aging layer AGL can be directly deposited on the light-emitting elements ED-1, ED-2, and ED-3. The aging layer AGL can be a laminated film. Therefore, the aging layer AGL can be formed by a separate process and then attached to the light-emitting elements ED-1, ED-2, and ED-3.

[0123] The aging layer AGL may include a porous membrane (POM) and a coating film (AC). The porous membrane (POM) may be disposed on the light-emitting elements ED-1, ED-2, and ED-3. The coating film (AC) may be disposed on the porous membrane (POM).

[0124] The coated film AC may include an organic acid. The organic acid may include at least one of methacrylic acid, acrylic acid, and citric acid. Furthermore, the organic acid may include a carboxyl group. However, this is merely exemplary, and the embodiments are not limited thereto. For example, the coated film AC may include an organic acid containing a non-carboxyl functional group.

[0125] In existing light-emitting elements (LEDs), the electron transport region includes metal oxides. With the removal of oxygen atoms, the metal oxides may possess oxygen vacancy defects. These defects allow electrons and holes to recombine at low energy levels. Consequently, the LED emits light through these defects, and electron trapping occurs, reducing electron mobility. Therefore, existing LEDs exhibit low luminous efficiency, high driving voltage, and short lifetime.

[0126] In contrast, in one embodiment, the electronic device EA ( Figure 3 In this process, an aging layer AGL, including a coating film AC, can be arranged on the light-emitting elements ED-1, ED-2, and ED-3. The organic acid coating film AC, including one embodiment, can help reduce defects in the light-emitting elements ED-1, ED-2, and ED-3 and improve electron mobility.

[0127] If the coated film AC is heated, the acid within the film AC can be volatilized and released as acidic fumes. Acidic fumes can refer to fine acidic particles. The released acidic fumes can pass through the porous membrane POM and diffuse into the interior of the light-emitting elements ED-1, ED-2, and ED-3. The acidic fumes can passivate the metal oxides MO (Metal Oxide) in the electron transport regions ETR-1, ETR-2, and ETR-3. Figures 8a to 8b The oxygen vacancy defects in the light-emitting elements ED-1, ED-2, and ED-3 can be suppressed to reduce defect luminescence and electron trapping, thereby increasing electron mobility. Therefore, the AC coating can contribute to the high luminous efficiency, low driving voltage, and long lifetime of the light-emitting elements ED-1, ED-2, and ED-3.

[0128] The coated film AC may also include a polymer matrix. The polymer matrix allows for the uniform dispersion of acidic fumes. Therefore, the polymer matrix can contribute to the uniform aging effect of the light-emitting elements ED-1, ED-2, and ED-3. Furthermore, the polymer matrix allows the coated film AC to adhere to the porous membrane POM.

[0129] The porous membrane (POM) can be a membrane through which acidic fumes generated by the coated membrane (AC) pass. The porous membrane (POM) can be arranged between the coated membrane (AC) and the light-emitting elements (ED-1, ED-2, ED-3), so that the acidic fumes are generated at a certain distance from the light-emitting elements (ED-1, ED-2, ED-3).

[0130] The thickness of porous membrane (POM) can be greater than 5 μm and less than 100 μm. Porous membranes with a thickness less than 5 μm have an incomplete pore structure. Therefore, when acidic fumes formed in the coating film pass through a porous membrane with a thickness less than 5 μm, the acidic fumes will not diffuse evenly into the light-emitting element. This results in uneven aging effects within the light-emitting element, and excessive aging only occurs in specific areas of the light-emitting element, thus producing spots on the surface of the display panel. Porous membranes with a thickness greater than 100 μm delay the diffusion of acidic fumes formed in the coating film into the light-emitting element. This reduces the aging effect of the light-emitting element.

[0131] In contrast, porous POM films with a thickness of 5 μm or more but less than 100 μm allow acidic fumes formed in the coated film AC to diffuse rapidly and uniformly into the light-emitting elements ED-1, ED-2, and ED-3. Therefore, the porous POM film of one embodiment contributes to the uniformity and improved aging effect of the light-emitting elements ED-1, ED-2, and ED-3, and can prevent spots from forming on the surface of the display panel DP. Accordingly, an electronic device EA including a porous POM film of one embodiment (… Figure 3 It can demonstrate excellent reliability and excellent display quality.

[0132] Porous membrane POMs can comprise polymers or ceramics. Polymers can comprise polydimethlysiloxane. And ceramics can comprise silicon oxycarbide. However, this is merely an example, and the materials for porous membrane POMs are not limited to these.

[0133] The encapsulation layer TFE may include at least one inorganic film (hereinafter referred to as the encapsulation inorganic film). Furthermore, the encapsulation layer TFE may include at least one organic film (hereinafter referred to as the encapsulation organic film) and at least one encapsulation inorganic film.

[0134] Encapsulating inorganic films protect the display element layer (DP-EL) and the aging layer (AGL) from moisture and oxygen, while encapsulating organic films protect them from foreign matter such as dust particles. Encapsulating inorganic films can include silicon nitrides, silicon oxides, silicon oxides, titanium oxides, or aluminum oxides, but are not specifically limited to these. Encapsulating organic films can include acrylic compounds, epoxy compounds, etc. Encapsulating organic films can include photopolymerizable organic materials, and are not specifically limited to these.

[0135] The optical layer PP may include a base substrate BL and a color filter layer CFL. The base substrate BL may be a component that provides a base surface for disposing the color filter layer CFL. The base substrate BL may be a glass substrate, a metal substrate, a plastic substrate, etc. However, the embodiments are not limited to this; the base substrate BL may be an inorganic layer, an organic layer, or a composite material layer.

[0136] The color filter layer CFL may include a first filter CF-R, a second filter CF-G, and a third filter CF-B. The first filter CF-R, the second filter CF-G, and the third filter CF-B may be arranged to correspond to the first light-emitting element ED-1, the second light-emitting element ED-2, and the third light-emitting element ED-3, respectively. For example, the first filter CF-R may be a red filter, the second filter CF-G may be a green filter, and the third filter CF-B may be a blue filter. The first filter CF-R, the second filter CF-G, and the third filter CF-B may be arranged to correspond to the first pixel region PXA-R, the second pixel region PXA-G, and the third pixel region PXA-B, respectively.

[0137] Each of the first filter CF-R, the second filter CF-G, and the third filter CF-B may include a polymeric photosensitive resin and a pigment or dye. The first filter CF-R may include a red pigment or red dye, the second filter CF-G may include a green pigment or green dye, and the third filter CF-B may include a blue pigment or blue dye. However, the embodiments are not limited thereto; the third filter CF-B may not include any pigment or dye. The third filter CF-B may include a polymeric photosensitive resin but not any pigment or dye. The third filter CF-B may be transparent. The third filter CF-B may be formed using a transparent photosensitive resin.

[0138] The color filter layer CFL may also include a buffer layer BFL. For example, the buffer layer BFL may be a protective layer protecting the first filter CF-R, the second filter CF-G, and the third filter CF-B. The buffer layer BFL may be disposed between the encapsulation layer TFE and the first filter CF-R, the second filter CF-G, and the third filter CF-B. The buffer layer BFL may be an inorganic layer comprising at least one inorganic material selected from silicon nitride, silicon oxide, and silicon oxide nitride. The buffer layer BFL may comprise a single layer or multiple layers.

[0139] Furthermore, the second filter CF-G and the third filter CF-B can be yellow filters. The second filter CF-G and the third filter CF-B can also be provided as a single unit without being separated from each other.

[0140] Although not shown, the color filter layer CFL may also include a light-shielding portion (not shown). The light-shielding portion may be a black matrix. The light-shielding portion may be formed as an organic or inorganic light-shielding material containing black pigment or black dye. The light-shielding portion can prevent light leakage and can define the boundaries between adjacent filters CF-B, CF-G, and CF-R.

[0141] Figures 8a to 8d This is a cross-sectional view showing light-emitting elements ED, ED-a, ED-b, and ED-c according to one embodiment. (Refer to...) Figures 8a to 8d The light-emitting elements ED, ED-a, ED-b, and ED-c may include a first electrode EL1, a light-emitting layer EML disposed on the first electrode EL1, a second electrode EL2 disposed on the light-emitting layer EML, a hole transport region HTR disposed between the first electrode EL1 and the second electrode EL2, and an electron transport region ETR disposed between the first electrode EL1 and the second electrode EL2. The light-emitting layer EML may be disposed between the electron transport region ETR and the hole transport region HTR.

[0142] Reference Figure 8a and Figure 8b At least one of the light-emitting elements ED and ED-a described herein can be applied in the same way. Figure 7 At least one of the first light-emitting element ED-1, the second light-emitting element ED-2, and the third light-emitting element ED-3 shown. Figure 8c and Figure 8d Compared to ED-b and ED-c light-emitting elements Figure 8a and Figure 8b The light-emitting elements ED and ED-a differ in their arrangement in the hole transport region (HTR) and electron transport region (ETR). (Refer to...) Figure 8c and Figure 8d At least one of the light-emitting elements ED-b and ED-c described herein can be used in the same way. Figure 7At least one of the first light-emitting element ED-1, the second light-emitting element ED-2, and the third light-emitting element ED-3 shown.

[0143] Reference Figure 8a and Figure 8b The light-emitting element ED and ED-a may include a first electrode EL1, a hole transport region HTR, a light-emitting layer EML, an electron transport region ETR, and a second electrode EL2, which are stacked sequentially. The hole transport region HTR may include a hole injection layer HIL and a hole transport layer HTL disposed on the hole injection layer HIL. The electron transport region ETR may include an electron transport layer ETL and an electron injection layer EIL disposed on the electron transport layer ETL.

[0144] exist Figure 8b In the light-emitting element ED-a shown, the hole transport region HTR may further include an electron blocking layer EBL disposed on the hole transport layer HTL. The electron transport region ETR may further include a hole blocking layer HBL disposed between the light-emitting layer EML and the electron transport layer ETL.

[0145] Reference Figure 8c and Figure 8d The light-emitting elements ED-b and ED-c may include a first electrode EL1, an electron transport region ETR, a light-emitting layer EML, a hole transport region HTR, and a second electrode EL2, which are stacked sequentially. The electron transport region ETR may include an electron injection layer EIL and an electron transport layer ETL disposed on the electron injection layer EIL. The hole transport region HTR may include a hole transport layer HTL and a hole injection layer HIL disposed on the hole transport layer HTL.

[0146] exist Figure 8d In the illustrated light-emitting element ED-c, the electron transport region ETR may further include a hole blocking layer HBL disposed between the electron transport layers ETL. The hole transport region HTR may further include an electron blocking layer EBL disposed between the light-emitting layer EML and the hole transport layer HTL.

[0147] and Figures 8a to 8d In the case shown, the electron injection layer (EIL) can be omitted. Either the hole injection layer (HIL) or the hole transport layer (HTL) can be omitted.

[0148] The electron transport region (ETR) may include, in one embodiment, a metal oxide (MO). More specifically, the electron transport layer (ETL) may include, in one embodiment, a metal oxide (MO).

[0149] The metal oxide MO may include at least one of SnO, SnO2, CuGaO2, Ga2O3, Cu2O, SrCu2O2, SrTiO3, CuAlO2, Ta2O5, NiO, BaSnO3 and TiO2, or may be represented by the following chemical formula M-1.

[0150] [Chemical Formula M-1] Zn (1-q) Me q O In the chemical formula M-1, q is 0 or more and 0.5 or less, and Me is Li, Be, Na, Mg, Al, K, Ca, Ti, V, Cr, Mn, Fe, Co, Ni, Cu, Ga, Ge, Rb, Sr, Zr, Nb, Mo, Ru, Pd, Ag, In, Sn(II), Sn(IV), Sb or Ba.

[0151] As mentioned above, metal oxides (MO) can be oxygen vacancy defects through the aging layer AGL ( Figure 7 The light-emitting elements ED, ED-a, ED-b, and ED-c, which are passivated by acidic fumes formed in the oxygen vacancy defect, exhibit high luminous efficiency, low driving voltage, and long lifetime characteristics. Accordingly, light-emitting elements ED, ED-a, ED-b, and ED-c, and an aging layer AGL, are included in one embodiment. Figure 7 EA (electronic device) Figure 3 It can exhibit excellent reliability.

[0152] The emissive layer EML may include quantum dot-c. The description of quantum dot-c in the following text can be applied in the same way. Figure 7 The first quantum dot QD-C1, the second quantum dot QD-C2, and the third quantum dot QD-C3 are shown.

[0153] In this specification, quantum dot QD-C can refer to a crystal of a semiconductor compound. Quantum dot QD-C can emit light of various wavelengths depending on the size of the crystal. For example, the diameter of quantum dot QD-C can be from about 1 nm to 10 nm.

[0154] Quantum dots (QD-C) can be synthesized through wet chemical processes, metal-organic chemical vapor deposition (MOCVD), molecular beam epitaxy (MBE), or similar processes. Wet chemical processes involve growing QD-C particles into crystals by mixing organic solvents and precursor materials. During crystal growth, the organic solvent naturally acts as a dispersant on the surface of the QD-C crystals and can regulate crystal growth. Therefore, wet chemical processes are easier than vapor deposition methods such as MOCVD or MBE, and allow for low-cost control of QD-C particle growth.

[0155] The quantum dot QD-C may include group II-VI semiconductor compounds, group I-II-VI semiconductor compounds, group II-IV-VI semiconductor compounds, group I-II-IV-VI semiconductor compounds, group III-V semiconductor compounds, group III-VI semiconductor compounds, group I-III-VI semiconductor compounds, group IV-VI semiconductor compounds, group II-IV-V semiconductor compounds, group IV elements or compounds, or any combination thereof. In this specification, "group" refers to a group in the IUPAC periodic table.

[0156] Examples of the group II-VI semiconductor compounds may include: binary compounds such as CdS, CdSe, CdTe, ZnS, ZnSe, ZnTe, ZnO, HgS, HgSe, HgTe, MgSe, MgS, etc.; and compounds such as CdSeS, CdSeTe, CdSTe, ZnSeS, ZnSeTe, ZnSTe, HgSeS, HgSeTe, HgSTe, CdZnS, CdZnS Ternary compounds such as e, CdZnTe, CdHgS, CdHgSe, CdHgTe, HgZnS, HgZnSe, HgZnTe, MgZnSe, MgZnS, etc.; quaternary compounds such as CdZnSeS, CdZnSeTe, CdZnSTe, CdHgSeS, CdHgSeTe, CdHgSTe, HgZnSeS, HgZnSeTe, HgZnSTe, etc.; or any combination thereof.

[0157] In addition, group II-VI semiconductor compounds may also include group I metals and / or group IV elements. Group I-II-VI semiconductor compounds may be selected from CuZnS, and group II-IV-VI semiconductor compounds may be selected from ZnSnS, etc. Group I-II-IV-VI semiconductor compounds may be quaternary compounds selected from the group consisting of Cu2ZnSnS2, Cu2ZnSnS4, Cu2ZnSnSe4, Ag2ZnSnS2 and mixtures thereof.

[0158] Examples of the group III-V semiconductor compounds may include: binary compounds such as GaN, GaP, GaAs, GaSb, AlN, AlP, AlAs, AlSb, InN, InP, InAs, InSb, etc.; ternary compounds such as GaNP, GaNAs, GaNSb, GaPAs, GaPSb, AlNP, AlNAs, AlNSb, AlPAs, AlPSb, InGaP, InNP, InAlP, InNAs, InNSb, InPAs, InPSb, etc.; quaternary compounds such as GaAlNP, GaAlNAs, GaAlNSb, GaAlPAs, GaAlPSb, GaInNP, GaInNAs, GaInNSb, GaInPAs, GaInPSb, InAlNP, InAlNAs, InAlNSb, InAlPAs, InAlPSb, etc.; or any combination thereof. Additionally, the group III-V semiconductor compounds may also include group II elements. Examples of III-V semiconductor compounds that also include group II elements include InZnP, InGaZnP, InAlZnP, etc.

[0159] Examples of the III-VI semiconductor compounds may include: binary compounds such as GaS, Ga2S3, GaSe, Ga2Se3, GaTe, InS, InSe, In2Se3, InTe, etc.; ternary compounds such as InGaS3, InGaSe3, etc.; or any combination thereof.

[0160] Examples of the group I-III-VI semiconductor compounds may include: ternary compounds such as AgInS, AgInS2, AgInSe2, AgGaS, AgGaS2, AgGaSe2, CuInS, CuInS2, CuInSe2, CuGaS2, CuGaSe2, CuGaO2, AgGaO2, AgAlO2, etc.; quaternary compounds such as AgInGaS2, AgInGaSe2, etc.; or any combination thereof.

[0161] Examples of the IV-VI group semiconductor compounds may include: binary compounds such as SnS, SnSe, SnTe, PbS, PbSe, PbTe, etc.; ternary compounds such as SnSeS, SnSeTe, SnSTe, PbSeS, PbSeTe, PbSTe, SnPbS, SnPbSe, SnPbTe, etc.; quaternary compounds such as SnPbSSe, SnPbSeTe, SnPbSTe, etc.; or any combination thereof.

[0162] Examples of the II-IV-V group semiconductor compounds may be ternary compounds selected from the group consisting of ZnSnP, ZnSnP2, ZnSnAs2, ZnGeP2, ZnGeAs2, CdSnP2, CdGeP2, and mixtures thereof.

[0163] The group IV elements or compounds may include: single elements such as Si and Ge; binary compounds such as SiC and SiGe; or any combination thereof.

[0164] The elements included in multi-component compounds such as the binary, ternary, and quaternary compounds can exist within the particles at uniform or non-uniform concentrations. That is, the chemical formulas described above can represent the types of elements included in the compound, and the element ratios within the compound can vary. For example, AgInGaS2 can represent AgIn. x Ga 1-x S2 (x is a real number between 0 and 1).

[0165] Furthermore, the quantum dot QD-C can have a single structure with uniform concentration of the various elements included in the respective quantum dot QD-C, or a core / shell dual structure. For example, the substances included in the core and the substances included in the shell can be different from each other.

[0166] The shell of the quantum dot QD-C can serve as a protective layer to maintain semiconductor properties by preventing chemical modification of the core and / or as a charging layer to impart electrophoretic properties to the quantum dot QD-C. The shell can be single-layered or multi-layered. In the core / shell structure, there can be a concentration gradient where the concentration of elements present in the shell decreases closer to the core.

[0167] Examples of the shell for the quantum dot (QD-C) include oxides of metals or nonmetals, semiconductor compounds, or combinations thereof. Examples of oxides of metals or nonmetals include: binary compounds such as SiO2, Al2O3, TiO2, ZnO, MnO, Mn2O3, Mn3O4, CuO, FeO, Fe2O3, Fe3O4, CoO, Co3O4, NiO, etc.; ternary compounds such as MgAl2O4, CoFe2O4, NiFe2O4, CoMn2O4, etc.; or any combination thereof. Examples of semiconductor compounds include III-VI group semiconductor compounds, II-VI group semiconductor compounds, III-V group semiconductor compounds, I-III-VI group semiconductor compounds, IV-VI group semiconductor compounds, or any combination thereof, as described in this specification. For example, the semiconductor compound may include CdS, CdSe, CdTe, ZnS, ZnSe, ZnTe, ZnSeS, ZnTeS, GaAs, GaP, GaS, GaSe, AgGaS, AgGaS2, GaSb, HgS, HgSe, HgTe, InAs, InP, InGaP, InSb, AlAs, AlP, AlSb; or any combination thereof.

[0168] The elements included in multi-component compounds, such as the binary or ternary compounds, may exist within the particles at uniform or non-uniform concentrations. That is, the chemical formula may represent the types of elements included in the compound, and the element ratios within the compound may vary.

[0169] Quantum dot-C (QD-C) can possess a full width at half maximum (FWHM) of its emission wavelength spectrum below approximately 45 nm, specifically below approximately 40 nm, and more specifically below approximately 30 nm. Within this range, color purity or color reproducibility can be improved. Furthermore, since the light emitted through these quantum dot-Cs is directed in all directions, a wider viewing angle can be achieved. The morphology of quantum dot-Cs can specifically take the form of spherical, pyramidal, multi-arm, or cubic nanoparticles, nanotubes, nanowires, nanofibers, nanoplates, etc.

[0170] By adjusting the size of the quantum dot QD-C or the element ratio within the compound constituting the quantum dot QD-C, the band gap can be adjusted, thus allowing the acquisition of light with multiple wavelength bands in the emissive layer EML including the quantum dot QD-C. Therefore, light-emitting elements ED, ED-a, ED-b, and ED-c emitting multiple wavelengths of light can be realized by using quantum dot QD-C as described above (using quantum dots of different sizes or different element ratios within the quantum dot compound). Specifically, the adjustment of the size of the quantum dot QD-C or the element ratio within the compound constituting the quantum dot QD-C can be selected to emit red, green, and / or blue light. Furthermore, the quantum dot QD-C can be configured to combine multiple colors of light to emit white light.

[0171] An electronic device of one embodiment can be manufactured by a manufacturing method of an electronic device of one embodiment. Figure 9a and Figure 9b This is a flowchart illustrating a method for manufacturing an electronic device according to an embodiment. Figures 10a to 10d This is a schematic diagram illustrating the manufacturing steps of an electronic device according to one embodiment. Hereinafter, regarding... Figures 9a to 10d The description will no longer include references. Figures 1 to 8d The explanation should repeat the same content and focus on the differences.

[0172] Reference Figure 9a A method for manufacturing an electronic device according to one embodiment may include: a step of preparing a light-emitting element comprising a light-emitting layer containing quantum dots and an electron transport region comprising a metal oxide (S100), a step of forming an aging layer (S200), and a step of depositing the aging layer on the light-emitting element (S300). See also... Figure 9b The step of forming an aging layer (S200) may include the step of preparing a porous membrane comprising a polymer or ceramic (S210), the step of setting a resin composition comprising an organic acid on the porous membrane (S220), and the step of irradiating the resin composition with light to form a coating film (S230).

[0173] Figures 10a to 10d It can be shown that includes Figure 7 The manufacturing method of the electronic device with the aged AGL layer shown. (Refer to...) Figure 10a The resin composition RC can be deposited on a porous membrane (POM). The resin composition RC can be deposited on the porous membrane (POM) via a nozzle (NZ). The resin composition RC can be deposited using inkjet printing or dispensing. In one embodiment, the liquid resin composition RC can be deposited at a uniform amount and / or uniform speed. Although in Figure 10aThe image shows a case where the resin composition RC is set through the nozzle NZ, but the setting device for the resin composition RC is not limited to this.

[0174] The resin composition RC may include organic acids. Furthermore, the resin composition RC may also include a polymer matrix.

[0175] Reference Figure 10b and Figure 10c A light source (LL) can be applied to a resin composition (RC) coated onto a porous membrane (POM) to a predetermined thickness. The liquid resin composition (RC) can be cured by the light source (LL) to form a coated film (AC).

[0176] Reference Figure 10d An aging layer AGL, comprising a porous membrane (POM) and a coating film (AC), can be disposed on one surface of the light-emitting elements ED-1, ED-2, and ED-3. The aging layer AGL can be attached to the light-emitting elements ED-1, ED-2, and ED-3 via a lamination process. Although not shown, after the aging layer AGL is disposed, an encapsulation layer TFE (Teflon) can also be disposed on the aging layer AGL. Figure 5 ).

[0177] An embodiment of an electronic device manufacturing method that includes the step of forming an aging layer can exhibit excellent manufacturing efficiency. Existing electronic device manufacturing methods that include the step of coating an acidic solution onto an encapsulation layer can only be applied to the manufacture of small-sized panels. In contrast, an embodiment of an electronic device manufacturing method that includes the step of depositing an aging layer on a light-emitting element after forming the aging layer can be applied to the manufacture of large panels.

[0178] An electronic device manufactured using a method according to one embodiment may include an aging layer disposed on a light-emitting element. The aging layer comprises a porous membrane containing a polymer or ceramic and a coating film containing an organic acid, thereby contributing to the light-emitting element exhibiting high luminous efficiency and long lifespan. Accordingly, the electronic device of one embodiment exhibits excellent display quality and excellent reliability.

[0179] While the above description has been made with reference to preferred embodiments of the present invention, it will be understood by those skilled in the art or those with ordinary knowledge of the art that various modifications and alterations can be made to the present invention without departing from the spirit and technical scope of the invention as set forth in the claims.

[0180] Therefore, the technical scope of this invention should not be limited to the contents described in the detailed specification, but should be determined by the claims.

Claims

1. An electronic device comprising a display module for providing an image, wherein, The display module includes a display element layer containing light-emitting elements and an aging layer disposed on the light-emitting elements. The light-emitting element includes a first electrode, a second electrode disposed on the first electrode, a light-emitting layer comprising quantum dots disposed between the first electrode and the second electrode, and an electron transport region comprising metal oxide disposed between the first electrode and the second electrode. The aging layer includes: A porous membrane, comprising a polymer or ceramic, is disposed on the light-emitting element; and A coating membrane containing an organic acid is disposed on the porous membrane.

2. The electronic device as claimed in claim 1, wherein, The thickness of the porous membrane is greater than 5 μm and less than 100 μm.

3. The electronic device as claimed in claim 1, wherein, The polymer includes polydimethylsiloxane, and the ceramic includes silicon carbide.

4. The electronic device as claimed in claim 1, wherein, The coating film also includes a polymer matrix.

5. The electronic device as claimed in claim 1, wherein, The organic acid includes at least one of methacrylic acid, acrylic acid, and citric acid.

6. The electronic device as claimed in claim 1, wherein, The organic acid includes a carboxyl group.

7. The electronic device as claimed in claim 1, wherein, The aging layer is directly disposed on the light-emitting element.

8. The electronic device as claimed in claim 1, wherein, The display module also includes an encapsulation layer disposed on the aging layer.

9. The electronic device as claimed in claim 1, wherein, The metal oxide includes at least one of SnO, SnO2, CuGaO2, Ga2O3, Cu2O, SrCu2O2, SrTiO3, CuAlO2, Ta2O5, NiO, BaSnO3, and TiO2, or is represented by the following chemical formula M-1: [Chemical Formula M-1] Zn (1-q) Me q O In the chemical formula M-1, q is greater than 0 and less than 0.

5. Me is Li, Be, Na, Mg, Al, K, Ca, Ti, V, Cr, Mn, Fe, Co, Ni, Cu, Ga, Ge, Rb, Sr, Zr, Nb, Mo, Ru, Pd, Ag, In, Sn(II), Sn(IV), Sb or Ba.

10. The electronic device of claim 1, wherein, The light-emitting element also includes a hole transport region. One of the hole transport region and the electron transport region is arranged between the first electrode and the light-emitting layer, and the other is arranged between the light-emitting layer and the second electrode.

11. The electronic device of claim 1, further comprising: At least one of a processor, memory, and power module.

12. A method for manufacturing an electronic device, comprising the following steps: Prepare the light-emitting elements; Formation of an aging layer; and The aging layer is disposed on the light-emitting element. in, The steps for forming the aged layer include the following steps: Prepare a porous membrane; A resin composition comprising an organic acid is disposed on the porous membrane; and A coating film is formed by irradiating the resin composition with light. The light-emitting element includes a first electrode, a second electrode disposed on the first electrode, a light-emitting layer comprising quantum dots disposed between the first electrode and the second electrode, and an electron transport region comprising metal oxide disposed between the first electrode and the second electrode. The porous membrane may be a polymer or a ceramic.

13. The method of manufacturing an electronic device as claimed in claim 12, further comprising the following steps: After the step of setting the aging layer, an encapsulation layer is set on the aging layer.

14. The method of manufacturing an electronic device as claimed in claim 12, wherein, The aging layer is bonded to the light-emitting element through a lamination process.

15. The method of manufacturing an electronic device as claimed in claim 12, wherein, The thickness of the porous membrane is greater than 5 μm and less than 100 μm.

16. The method of manufacturing an electronic device as claimed in claim 12, wherein, The polymer includes polydimethylsiloxane, and the ceramic includes silicon carbide.

17. The method of manufacturing an electronic device as claimed in claim 12, wherein, The organic acid includes at least one of methacrylic acid, acrylic acid, and citric acid.

18. The method of manufacturing an electronic device as claimed in claim 12, wherein, The resin composition further includes a polymer matrix.

19. The method of manufacturing an electronic device as claimed in claim 12, wherein, The resin composition is prepared by inkjet printing or dispensing.

20. The method of manufacturing an electronic device as claimed in claim 12, wherein, The metal oxide includes at least one of SnO, SnO2, CuGaO2, Ga2O3, Cu2O, SrCu2O2, SrTiO3, CuAlO2, Ta2O5, NiO, BaSnO3, and TiO2, or is represented by the following chemical formula M-1: [Chemical Formula M-1] Zn (1-q) Me q O In the chemical formula M-1, q is greater than 0 and less than 0.

5. Me is Li, Be, Na, Mg, Al, K, Ca, Ti, V, Cr, Mn, Fe, Co, Ni, Cu, Ga, Ge, Rb, Sr, Zr, Nb, Mo, Ru, Pd, Ag, In, Sn(II), Sn(IV), Sb or Ba.

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