Organic el display device and method for manufacturing organic el display device

Abstract

This invention provides an organic EL display device comprising fine grooves on a glass substrate and a method for manufacturing the organic EL display device. The organic EL display device includes a plurality of pixels, each comprising: a first electrode; a second electrode disposed on the first electrode and including a first bottom portion connected to the first electrode; a portion of a third electrode disposed separately from the second electrode on the same layer as the second electrode; an EL element disposed on the second and third electrodes and connected to the second electrode; a second insulating layer disposed between the EL element and the second electrode and between the EL element and the third electrode, and connected to the EL element, the second electrode, and the third electrode; a first groove disposed on the second insulating layer and including a sidewall of the second insulating layer and a second bottom portion connected to the sidewall and exposing a portion of the surface of the third electrode; and a fourth electrode disposed on the EL element and connected to the EL element, the first sidewall, and the second bottom portion, wherein the first bottom portion is disposed at a deeper position than the second bottom portion from the upper surface of the second insulating layer.

Description

Technical Field

[0001] This invention relates to organic EL display devices. Furthermore, this invention relates to a method for manufacturing organic EL display devices. Background Technology

[0002] In recent years, display devices (hereinafter referred to as "organic EL display devices") that form pixels including organic electroluminescent elements (hereinafter referred to as "organic EL elements") have been installed in smartphones, cameras, and the like. For example, the manufacturing process of an organic EL display device includes forming organic EL elements corresponding to the emitted color by vacuum evaporation, inkjet printing, or the like. For example, it is known that organic EL elements corresponding to the emitted color are formed separately from each other by micro-grooves (Patent Document 1).

[0003] Patent Document 1: International Publication No. 2022 / 136995

[0004] On the other hand, there is a demand for the mass production and inexpensive manufacturing of organic EL display devices. For example, one means of achieving this demand includes using glass substrates. However, the manufacturing methods for organic EL display devices using glass substrates make it difficult to form fine grooves on the glass substrates. Summary of the Invention

[0005] One of the technical problems of this invention is to provide an organic EL display device comprising fine grooves on a glass substrate. Another technical problem of this invention is to provide a method for manufacturing an organic EL display device comprising fine grooves on a glass substrate.

[0006] One embodiment of the present invention relates to an organic EL display device comprising a plurality of pixels arranged in a first direction and a second direction, wherein the second direction intersects the first direction, and the plurality of pixels respectively comprising: a first electrode; a first insulating layer disposed on the first electrode; an opening disposed on the first insulating layer and including a sidewall and a first bottom of the first insulating layer, wherein the first bottom is connected to the sidewall and exposes a portion of the surface of the first electrode; a second electrode disposed on the first insulating layer and in contact with the first insulating layer, the sidewall and the first electrode, wherein the second electrode is in contact with the first electrode at the first bottom; and a portion of a third electrode disposed separately from the second electrode in the same layer as the second electrode. An EL element is disposed on the second electrode and the third electrode, and is connected to the second electrode; a second insulating layer is disposed between the EL element and the second electrode and between the EL element and the third electrode, and is connected to the EL element, the second electrode and the third electrode; a first groove is disposed in the second insulating layer, and includes a sidewall and a second bottom of the second insulating layer, the second bottom being connected to the sidewall and exposing a portion of the surface of the third electrode; and a fourth electrode is disposed on the EL element and is connected to the EL element, the sidewall and the third electrode, the fourth electrode being connected to the third electrode at the second bottom, the first bottom being disposed at a deeper position from the upper surface of the second insulating layer than the second bottom.

[0007] One embodiment of the present invention relates to a method for manufacturing an organic EL display device, comprising a plurality of pixels arranged in a first direction and a second direction, wherein the second direction intersects the first direction, and the plurality of pixels respectively include: a first electrode; a first insulating layer disposed on the first electrode; an opening disposed on the first insulating layer, including a sidewall and a first bottom of the first insulating layer, the first bottom being connected to the sidewall and exposing a portion of the surface of the first electrode; a second electrode disposed on the second insulating layer and in contact with the first insulating layer, the sidewall, and the first electrode, the second electrode being in contact with the first electrode at the first bottom; a portion of a third electrode disposed separately from the second electrode on the same layer as the second electrode; an EL element disposed on the second electrode and the third electrode and in contact with the second electrode; a second insulating layer disposed between the EL element and the second electrode and between the EL element and the third electrode, and in contact with the EL element, the second electrode, and the third electrode; and a first slot disposed on the second electrode. An insulating layer, including a sidewall and a second bottom of a second insulating layer, the second bottom being connected to the sidewall and exposing a portion of the surface of the third electrode; and a fourth electrode disposed on the EL element and in contact with the EL element, the sidewall, and the third electrode, the fourth electrode being in contact with the third electrode at the second bottom, the first bottom being disposed at a deeper position than the second bottom from the upper surface of the second insulating layer, the manufacturing method comprising: forming a first inorganic insulating layer on the second electrode where the second insulating layer is not disposed and on the second insulating layer; forming a second inorganic insulating layer on the first inorganic insulating layer overlapping a portion of the third electrode and the second insulating layer; forming a third inorganic insulating layer on the first inorganic insulating layer where the second inorganic insulating layer is not formed and on the side and upper surface of the second inorganic insulating layer; removing the third inorganic insulating layer on the first inorganic insulating layer where the second inorganic insulating layer is not formed, the third inorganic insulating layer on the upper surface, and a portion of the third inorganic insulating layer on the side to form a sidewall; and using the sidewall to form the first groove. Attached Figure Description

[0008] Figure 1 This is a top view showing the configuration of the organic EL display device according to the first embodiment.

[0009] Figure 2 This is a layout diagram illustrating an example of the pixel configuration involved in the first embodiment.

[0010] Figure 3 It means Figure 1A cross-sectional view of an example of the structure of the organic EL display device shown, cut along line A1-A2.

[0011] Figure 4 It means to Figure 3 A cross-sectional view of a portion of the structure of the organic EL display device shown, magnified.

[0012] Figure 5A This is a timing diagram illustrating the manufacturing method of the organic EL display device according to the second embodiment.

[0013] Figure 5B This is a timing diagram illustrating the manufacturing method of the organic EL display device according to the second embodiment.

[0014] Figure 6 It is a cross-sectional view showing the structure of a portion of the pixel involved in one embodiment of the present invention after being enlarged.

[0015] Figure 7 It is a cross-sectional view showing the structure of a portion of the pixel involved in the second embodiment after being enlarged.

[0016] Figure 8 It is a cross-sectional view showing the structure of a portion of the pixel involved in the second embodiment after being enlarged.

[0017] Figure 9 It is a cross-sectional view showing the structure of a portion of the pixel involved in the second embodiment after being enlarged.

[0018] Figure 10 It is a cross-sectional view showing the structure of a portion of the pixel involved in the second embodiment after being enlarged.

[0019] Figure 11 It is a cross-sectional view showing the structure of a portion of the pixel involved in the second embodiment after being enlarged.

[0020] Figure 12 It is a cross-sectional view showing the structure of a portion of the pixel involved in the second embodiment after being enlarged.

[0021] Figure 13 It is a cross-sectional view showing the structure of a portion of the pixel involved in the second embodiment after being enlarged.

[0022] Figure 14 It is a cross-sectional view showing the structure of a portion of the pixel involved in the second embodiment after being enlarged.

[0023] Figure 15 It is a cross-sectional view showing the structure of a portion of the pixel involved in the second embodiment after being enlarged.

[0024] Figure 16 It is a cross-sectional view showing the structure of a portion of the pixel involved in the second embodiment after being enlarged.

[0025] Figure 17 It is a cross-sectional view showing the structure of a portion of the pixel involved in the second embodiment after being enlarged.

[0026] Figure 18 It is a cross-sectional view showing the structure of a portion of the pixel involved in the second embodiment after being enlarged.

[0027] Explanation of reference numerals in the attached figures

[0028] 100: Display device; 101: Substrate; 101A: First surface; 102: Display section; 103: Peripheral section; 104: Scan signal line driving circuit; 105: Scan signal line; 106: Driver IC; 107: Terminal; 108: Flexible printed substrate; 109B: Subpixel; 109G: Subpixel; 109R: Subpixel; 110: Image signal line; 111: High-potential power line; 114: Low-potential power line; 115: Pixel; 121: Substrate layer; 122: Semiconductor layer; 122A: Semiconductor layer; 123: Trench 124A: Source, 124B: Drain, 125: Gate insulating layer, 126: Conductive layer, 127: Gate electrode, 128: Insulating layer, 129: Conductive layer, 130: Capacitor line, 131: Insulating layer, 132: Conductive layer, 132A: Electrode, 133: Transistor, 134: Capacitor element, 135: Opening, 136: Insulating layer, 137: Insulating layer, 138: Opening, 139: Conductive layer, 140: Pixel electrode, 140B: Bottom, 140D: Lower surface, 140H: Tilted portion, 140T 141: Flat section; 141A: Insulating layer; 143: Conductive layer; 143D: Lower surface; 145: Functional layer; 145B: Light-emitting layer; 145G: Light-emitting layer; 145R: Light-emitting layer; 146: Third layer; 148: Functional layer; 149: Common electrode; 150: Light-emitting element; 152: Insulating layer; 153: Inorganic insulating layer; GE: Eaves; 153RE: Eaves; 154: Organic insulating layer; 156: Inorganic insulating layer; 158: Covering film; 160: Sealing film; 162: Space; 170: Array layer 191: First side, 192: Second side, 193: Third side, 194: Fourth side, 200: Area, 202: Insulating layer, 204: Insulating layer, 206: Inorganic insulating layer, 206A: Sidewall, 206B: Sidewall, 208: First resist, 210A: Opening, 210B: Opening, 212: Groove, 212B: Groove, 212G: Groove, 212GB: Bottom, 212R: Groove, 212RB: Bottom, 212RI: Groove, 212RW: Sidewall, 214: Second resist, 216: Third resist. Detailed Implementation

[0029] Hereinafter, embodiments of the present invention will be described with reference to the accompanying drawings. However, the present invention can be implemented in many different ways and is not limited to the description of the embodiments illustrated below. Furthermore, in order to make the explanation clearer, the drawings sometimes schematically show the width, thickness, shape, structure, etc. of various parts compared to the actual embodiment; however, this is merely an example and does not limit the interpretation of the present invention. Additionally, in embodiments of the present invention, elements that are the same as those described in the preceding figures are sometimes labeled with the same reference numerals (or reference numerals followed by a, b, etc.), and detailed descriptions are appropriately omitted. It should be noted that the words "first" and "second" added to each element are convenient identifiers used to distinguish the elements and do not have further meaning unless specifically explained.

[0030] In this specification, the term "above (or below)" a component or region, unless otherwise specified, includes not only the case where it is directly above (or directly below) another component or region, but also the case where it is above (or below) another component or region, that is, the case where other constituent elements are included between the above (or below) another component or region.

[0031] In this specification, the first direction D1 intersects the second direction D2, and the third direction D3 intersects both the first direction D1 and the second direction D2 (equivalent to the direction of the normal to the plane D1-D2). For example, the first direction D1, the second direction D2, and the third direction D3 correspond to the X direction (x direction), the Y direction (y direction), and the Z direction (z direction).

[0032] In this specification, when using terms such as same, identical, and consistent, these terms may also include errors within the design scope.

[0033] In this specification, when distinguishing elements of the same reference numerals in the organic EL display device 100, letters are added after the reference numerals of the elements of the same reference numerals.

[0034] [1. First Embodiment]

[0035] Reference Figures 1-4 An overview of the organic EL display device 100 will be provided.

[0036] [1-1. Composition of the Organic EL Display Device 100]

[0037] Figure 1 This is a schematic diagram showing the configuration of the organic EL display device 100.

[0038] For example, such as Figure 1 As shown, the organic EL display device 100 includes a first surface 101A of a substrate 101 (see reference). Figure 3 The display portion 102 and peripheral portion 103 are formed on top of the display portion 102. When viewed from above, the organic EL display device 100 is surrounded by a first side 191, a second side 192 opposite to the first side, a third side 193, and a fourth side 194 opposite to the third side. The peripheral portion 103 surrounds the display portion 102. In the peripheral portion 103, scan signal line drive circuits 104 are respectively arranged near the first side 191 and near the second side 192, and a terminal portion is arranged near the third side 193. The terminal portion includes a plurality of terminals 107. The plurality of terminals 107 are arranged along a first direction D1 (row direction) and arranged along a second direction D2 (column direction) on the lower side of the display portion 102. A plurality of pixels 115 are arranged in the display portion 102.

[0039] The flexible printed circuit board 108 is connected to the terminal section (multiple terminals 107). The driver IC 106 is disposed on the flexible printed circuit board 108 using a COF (Chip on Film) method. The driver IC 106 can also be disposed on the flexible printed circuit board 108 using a COG (Chip on Glass) method.

[0040] For example, driver IC106 includes an image signal line driving circuit. In this embodiment, driver IC106 or scan signal line driving circuit 104 may be referred to separately as a control circuit or control unit, while driver IC106 and scan signal line driving circuit 104 may be collectively referred to as a control circuit or control unit.

[0041] Multiple scan signal lines 105 are connected to a scan signal line driving circuit 104. The multiple scan signal lines 105 are arranged adjacent to the display unit 102 in a first direction D1. The scan signal line driving circuit 104 is located adjacent to the display unit 102 in the first direction D1. The multiple scan signal lines 105 are electrically connected to multiple pixels 115. For example, multiple image signal lines 110, a high-potential power line 111, and a low-potential power line 114 are connected to multiple terminals 107. The multiple image signal lines 110 are configured to extend in a second direction D2 of the organic EL display device 100. The multiple image signal lines 110 are electrically connected to the multiple pixels 115 and are electrically connected to a driver IC 106 via multiple terminals 107 and a flexible printed circuit board 108. The high-potential power line 111 and the low-potential power line 114 are electrically connected to the scan signal line driving circuit 104. The high-potential power line 111 and the low-potential power line 114 may also be electrically connected to the multiple pixels 115.

[0042] Driver IC 106 supplies signals (voltages) to scan signal line drive circuit 104, multiple image signal lines 110, high-potential power line 111, and low-potential power line 114. Multiple scan signal lines 105 supply scan signals corresponding to each of the multiple pixels 115. Multiple image signal lines 110 supply image signals from driver IC 106 based on the images displayed on the multiple pixels 115. High-potential power line 111 and low-potential power line 114 supply potentials to scan signal line drive circuit 104 and the multiple pixels 115.

[0043] [1-2. Composition of pixel 115]

[0044] Figure 2 This is a layout diagram illustrating an example of the configuration of pixels 115 included in an organic EL display device 100. Pixel 115 in Figure 1 and Figure 2 The area is represented by a dashed line. This dashed line is an imaginary line used to simply represent the area of ​​pixel 115.

[0045] like Figure 1 As shown, a plurality of pixels 115 are arranged in a matrix in the first direction D1 and the second direction D2. Pixel 115 includes sub-pixels 109R, 109G, and 109B. For example, sub-pixels 109R and 109B are arranged in the second direction D2. Sub-pixels 109B and 109G, as well as sub-pixels 109R and 109G, are arranged in the first direction D1. A plurality of sub-pixels 109G are arranged relative to each other in the second direction D2. That is, in the display unit 102, columns in which sub-pixels 109B and 109R are arranged alternately along the second direction D2 and columns in which only sub-pixels 109G are arranged along the second direction D2 are arranged alternately in the first direction D1 (row direction).

[0046] Figure 2 The light-emitting layers 145R, 145G, and 145B shown are light-emitting layers that emit light of different colors. Figure 2 The layout of pixel 115 shown includes the slot 212R and light-emitting layer 145R of sub-pixel 109R, the slot 212G and light-emitting layer 145G of sub-pixel 109G, and the slot 212B and light-emitting layer 145B of sub-pixel 109B, while other elements are omitted. The slot 212 is referred to as the first slot.

[0047] For example, sub-pixel 109R includes a light-emitting layer 145R that emits red light and includes a red light-emitting element. Sub-pixel 109G includes a light-emitting layer 145G that emits green light and includes a green light-emitting element. Sub-pixel 109B includes a light-emitting layer 145B that emits blue light and includes a blue light-emitting element. In this embodiment, R (red) represents the constituent elements included in the red light-emitting element, G (green) represents the constituent elements included in the green light-emitting element, and B (blue) represents the constituent elements included in the blue light-emitting element.

[0048] For example, the peak emission wavelength of a blue light-emitting element is above 460nm and below 500nm, the peak emission wavelength of a green light-emitting element is above 500nm and below 570nm, and the peak emission wavelength of a red light-emitting element is above 610nm and below 780nm.

[0049] [1-3. Cross-section of the organic EL display device 100]

[0050] Figure 3 It means Figure 1 The diagram shows an example cross-sectional view of the structure of the organic EL display device 100 along line A1-A2. Figure 4 It means to Figure 3 The shown section is an example of a cross-sectional view of the structure of region 200, magnified. Further details can be added as needed. Figure 1 and Figure 2 Explain the same or similar composition.

[0051] like Figure 3 As shown, a semiconductor layer 122 is disposed on the first surface 101A of the substrate 101, separated from the substrate layer 121. The semiconductor layer 122 includes a channel portion 123, a source portion 124A, and a drain portion 124B. The source portion 124A and the drain portion 124B can also interchange their respective electrodes as source electrodes and as drain electrodes depending on the voltage supplied to them.

[0052] Above the semiconductor layer 122, a gate insulating layer 125, a conductive layer 126, an insulating layer 128, a conductive layer 129, an insulating layer 131, and a conductive layer 132 are sequentially disposed. For example, the conductive layer 126 includes a gate electrode 127 and a scan signal line 105 (see reference). Figure 1 For example, conductive layer 129 includes capacitor line 130. For example, conductive layer 132 includes electrode 132A, high-potential power line 111, low-potential power line 114, and image signal line 110 (see reference). Figure 1 For example, conductive layer 132 is described as the first electrode.

[0053] The organic EL display device 100 includes a plurality of transistors. For example, the plurality of transistors are formed using a semiconductor layer 122A (channel portion 123, source portion 124A, and drain portion 124B), a gate insulating layer 125, and a gate electrode 127, respectively. The channel portion 123 is the region where the semiconductor layer 122 overlaps with the gate electrode 127, and is the region disposed between the source portion 124A and the drain portion 124B. For example, the plurality of transistors includes a transistor 133. The transistor 133 is included in sub-pixels 109R, 109G, and 109B, and is a transistor used to drive sub-pixels 109R, 109G, and 109B.

[0054] Alternatively, the organic EL display device 100 may also include a capacitor element. For example, the capacitor element 134 may be formed using a gate insulating layer 125 as the dielectric, and using capacitor lines 130 and a semiconductor layer 122. Alternatively, the capacitor element 134 may be formed using an insulating layer 128 as the dielectric, and using capacitor lines 130 and a conductive layer 126, or it may be formed using an insulating layer 131 as the dielectric, and using capacitor lines 130 and a conductive layer 132. Furthermore, the capacitor element 134 may also be formed using capacitor lines 130 and a layer above the capacitor lines 130.

[0055] An opening 135 leading to the semiconductor layer 122 is disposed on the gate insulating layer 125, the insulating layer 128, and the insulating layer 131. The conductive layer 132 is electrically connected to the semiconductor layer 122, the source portion 124A, and the drain portion 124B through the opening 135. In addition, an opening (not shown) leading to the gate electrode 127 is also disposed on the insulating layers 128 and 131, and an opening (not shown) leading to the capacitor line 130 is also disposed on the insulating layers 128 and 131.

[0056] The insulating layer 136 is provided to cover the conductive layer 132. Alternatively, an insulating layer 137 may be formed on top of the insulating layer 136. A conductive layer (not shown) may also be formed between the insulating layer 137 and the insulating layer 136, with the capacitor element using the insulating layer 137 as a dielectric, and formed using the pixel electrode 140 (conductive layer 139) and this conductive layer. Figure 3 In the example of the organic EL display device 100 shown, an example with an insulating layer 137 is illustrated. For example, the insulating layer 136 is sometimes referred to as a first insulating layer, and the pixel electrode 140 (conductive layer 139) is sometimes referred to as a second electrode.

[0057] Multiple openings 138 are provided on insulating layers 136 and 137. The openings 138 expose portions of the sidewalls of insulating layer 137, the sidewalls of insulating layer 136, and a portion of the surface of conductive layer 132 (electrode 132A). Therefore, the openings 138 include a first bottom portion exposing a portion of the surface of conductive layer 132 (electrode 132A). Additionally, although not shown in the figures, the openings 138 expose a portion of terminal 107. The exposed portion of terminal 107 is connected to the flexible printed circuit board 108 using a conductive film such as an anisotropic conductive film (not shown).

[0058] For example, array layer 170 includes elements forming transistors, including base layer 121 to insulating layer 137.

[0059] Reference Figure 4 The elements of the upper layer of conductive layer 139 will be explained in comparison. It should be noted that sub-pixels 109R, 109G, and 109B have the same structure. Therefore, in the following description of the organic EL display device 100, the structure of sub-pixel 109R will be explained, while the structures of sub-pixels 109G and 109B will be explained as needed.

[0060] A conductive layer 139 is disposed on the upper layer of the insulating layer 137 and the opening portion 138. The conductive layer 139 includes a pixel electrode 140. The pixel electrode 140 includes a flat portion 140T, an inclined portion 140H connected to the flat portion 140T, a bottom portion 140B connected to the flat portion 140T and the inclined portion 140H, and a lower surface 140D of the bottom portion 140B. The flat portion 140T is in contact with the insulating layer 137, and the inclined portion 140H and the bottom portion 140B (lower surface 140D) are in contact with the opening portion 138. In other words, the inclined portion 140H is in contact with the sidewalls of the insulating layer 137 and the sidewalls of the insulating layer 136, and the bottom portion 140B (lower surface 140D) is in contact with the conductive layer 132 (electrode 132A). That is, the opening portion 138 electrically connects the pixel electrode 140 to the conductive layer 132 (electrode 132A). In the case where the organic EL display device 100 does not include the insulating layer 137, the conductive layer 139 is disposed on the upper layer of the insulating layer 136 and the opening portion 138. The flat portion 140T is in contact with the insulating layer 136, and the inclined portion 140H and the bottom 140B (lower surface 140D) are in contact with the opening portion 138. In other words, the inclined portion 140H is in contact with the sidewall of the insulating layer 136, and the bottom 140B (lower surface 140D) is in contact with the conductive layer 132 (electrode 132A).

[0061] The conductive layer 143 is in contact with the insulating layer 137 and is disposed separately from the planar portion 140T on the same layer as the planar portion 140T of the pixel electrode 140. The conductive layer 143 includes a lower surface 143D. In the case where the organic EL display device 100 does not include the insulating layer 137, the conductive layer 143 (lower surface 143D) is in contact with the insulating layer 136, similar to the conductive layer 139.

[0062] The insulating layer 141 is provided such that it covers the surface and ends of the pixel electrode 140 and the ends of the conductive layer 143. The insulating layer 141 includes an insulating layer 141A, which is disposed on the surface of the conductive layer 143. Additionally, the insulating layer 141 includes trenches 212R, 212G, and 212B (see reference 143). Figure 2 and Figure 3 The slot 212 is disposed between the insulating layer 141A and the insulating layer 141 disposed between each sub-pixel. The insulating layer 141 is described as a partition wall, rib, etc. For example, the insulating layer 141 and the insulating layer 141A are sometimes described as a second insulating layer.

[0063] The functional layer 145 is provided to cover the conductive layer 139 (pixel electrode 140) included in the display unit 102. The configuration of the functional layer 145 can be appropriately selected. The functional layer 145 is constructed by combining multiple layers such as a carrier injection layer, a carrier transport layer, a light-emitting layer, a carrier blocking layer, and an exciton blocking layer. Figure 3 and Figure 4 In the organic EL display device 100 shown, as an example, only the functional layer 145 (light-emitting layers 145R, 145G and 145B) of the multiple layers is shown.

[0064] The area where the conductive layer 139 (pixel electrode 140) is connected to the functional layer 145 becomes the light-emitting part in each sub-pixel 109R, each sub-pixel 109G, and each sub-pixel 109B.

[0065] Although the illustration is omitted, for example, functional layer 145 may include: a first layer including a carrier (hole) injection and transport layer; a second layer as functional layer 145; and a third layer 146 including a carrier (electron) injection and transport layer. Functional layer 145 is configured to contain different materials in sub-pixels 109R, 109G, and 109B. As described in "1-2. Configuration of Pixel 115", in the organic EL display device 100, sub-pixel 109R includes a light-emitting layer 145R, sub-pixel 109G includes a light-emitting layer 145G, and sub-pixel 109B includes a light-emitting layer 145B.

[0066] Functional layer 145 is surrounded by slot 212. Specifically, light-emitting layer 145R is surrounded by slot 212R, light-emitting layer 145G is surrounded by slot 212G, and light-emitting layer 145B is surrounded by slot 212B. Light-emitting layers 145R, 145G, and 145B are disconnected (broken) by slots 212R, 212G, and 212B, and are separated from each other. That is, slots 212R, 212G, and 212B have the function of preventing light-emitting layers 145R, 145G, and 145B from contacting each other and protecting them from the effects of contact.

[0067] The common electrode 149 is disposed on the functional layer 145 in a manner that covers the functional layer 145. Furthermore, the common electrode 149 is disposed in the slot 212. Because the common electrode 149 is disposed in the slot 212 of each sub-pixel, it is not disposed on the insulating layer 141A (surface), and is disconnected (line broken), separated by each pixel. On the other hand, by disposing the common electrode 149 in the slot 212, the lower end of the common electrode 149 located below along the third direction D3 is exposed by the slot 212 and contacts the surface of the conductive layer 143. For example, the common electrode 149 disposed in slot 212R is connected to the common electrode 149 disposed in the adjacent slot 212G via the conductive layer 143. Similarly, the common electrode 149 disposed in slot 212G is connected to the common electrode 149 disposed in slot 212B adjacent to slot 212G via conductive layer 143, and the common electrode 149 disposed in slot 212B is connected to the common electrode 149 disposed in slot 212R adjacent to slot 212B via conductive layer 143. In this way, the common electrodes 149 disposed in each sub-pixel are disconnected (broken) by slot 212, separated from each other, but connected to conductive layer 143 by being embedded in slot 212, and interconnected via conductive layer 143. Furthermore, slot 212RI (see reference) is formed by embedding the common electrodes 149 in slot 212. Figure 13 Slot 212RI is referred to as the second slot.

[0068] In the organic EL display device 100, a light-emitting element 150 is formed on top of an insulating layer 137. For example, the light-emitting element 150 is composed of a pixel electrode 140, a functional layer 148, and a common electrode 149. For example, when the transistor 133 of the sub-pixel 109R is driven, a desired current is supplied to the light-emitting element 150 (light-emitting layer 145R), and the light-emitting element 150 of the sub-pixel 109R emits red light.

[0069] A sealing film 160 is disposed on the light-emitting element 150. The sealing film 160 includes an insulating layer 152, an inorganic insulating layer 153, an organic insulating layer 154, and an inorganic insulating layer 156. For example, the insulating layer 152 is sometimes referred to as a third insulating layer, the inorganic insulating layer 153 as a fourth inorganic insulating layer, and the inorganic insulating layer 156 as a fifth inorganic insulating layer.

[0070] An insulating layer 152 is disposed above the common electrode 149. Similar to the functional layer 145, the insulating layer 152 is separated from each pixel by the slot 212. The insulating layer 152 is not disposed in the slot 212 and is separated from the slot 212.

[0071] An inorganic insulating layer 153 is disposed above the insulating layer 152 and the common electrode 149. The inorganic insulating layer 153 disposed above the common electrode 149 is embedded in a groove 212RI. The inorganic insulating layer 153 includes an eaves portion separately disposed from the insulating layers 141 and 141A. The eaves portion includes eaves portion 153RE and eaves portion 153GE. Figure 3 and Figure 4 In the cross-sectional view shown, the eaves extend further in the first direction D1 and the second direction D2 than the groove 212. When viewed from above, the eaves overlap with the common electrode 149 exposed in the insulating layer 141A and a portion of the insulating layer 141A. Furthermore, the inorganic insulating layer 153, like the insulating layer 152, is separated from each pixel. For example, the inorganic insulating layer 153 covers the functional layer 145, the common electrode 149, and the insulating layer 152 corresponding to each sub-pixel, preventing the functional layer 145, the common electrode 149, and the insulating layer 152 from being excessively exposed to gases or solutions during processing. Additionally, the position of each sub-pixel becomes clear based on the positions of the eaves 153RE and 153GE of the inorganic insulating layer 153. It should be noted that, although not shown in the figure, the inorganic insulating layer 153 included in the sub-pixel 109B has the same eaves for the sub-pixel 109B as the eaves 153RE and 153GE.

[0072] Additionally, a space 162 is provided (formed) between the eaves 153RE of sub-pixel 109R, the eaves 153GE of sub-pixel 109G, and the insulating layer 141A between the slots 212R of sub-pixel 109R and the slots 212G of sub-pixel 109G.

[0073] The organic insulating layer 154 is provided such that it at least covers the display portion 102. Specifically, the organic insulating layer 154 is provided on the surface of the inorganic insulating layer 153 and in the space 162.

[0074] The inorganic insulating layer 156 is provided such that it at least covers the display section 102. Specifically, the inorganic insulating layer 156 is disposed on the surface of the organic insulating layer 154. The cover film 158 is disposed on the inorganic insulating layer 156.

[0075] The inorganic insulating layer 156 is provided such that it at least covers the display section 102. Specifically, the inorganic insulating layer 156 is disposed on the surface of the organic insulating layer 154. The cover film 158 is disposed on the inorganic insulating layer 156.

[0076] like Figure 4 As shown, the width W1 of the bottom 140B (lower surface 140D) of the pixel electrode 140 is the same as the width of the bottom of the opening 138. Width W1 is wider than the width W2 of the bottom 212RB of the slot 212R and the width W3 of the bottom 212GB of the slot 212G. Width W2 can be the same as width W3. The length L1 of the eaves 153RE extending along the second direction D2 can be the same as the length L2 of the eaves 153GE extending along the second direction D2. The width W5 of the insulating layer 141A is wider than the width W4 between the eaves 153RE and the eaves 153GE. That is, the eaves 153RE and the eaves 153GE overlap a portion of the insulating layer 141A. Furthermore, the distance between the end of the flat portion 140T of the pixel electrode 140 and the end of the conductive layer 143 is a distance W6. In addition, the bottom 140B of the pixel electrode 140 (the bottom of the lower surface 140D and the bottom of the opening 138) is located at a position lower than the bottom 212RB of the groove 212R and the bottom 212GB of the groove 212G along the third direction D3 (lower position).

[0077] For example, when forming an organic EL display device using a substrate of a size that can utilize the manufacturing process of ICs such as driver ICs, substrates such as silicon wafers and sapphire substrates can be used. In the IC manufacturing process, it is easy to form plugs with openings buried deep along the third direction D3 and fine trenches. Therefore, for example, even if the pixel electrode is located above the bottom of a trench that is finer along the third direction D3, the conductive layer is located below the bottom of a trench that is finer along the third direction D3, and the conductive layer is disposed at a deep position relative to the pixel electrode along the third direction, the pixel can be easily miniaturized. The connection position between the pixel electrode and the plug is located higher than the bottom of the trench that is finer along the third direction D3, and the pixel electrode can be connected to the conductive layer disposed below the pixel electrode and the fine trench along the third direction D3 via the plug with the deep opening.

[0078] On the other hand, for example, the substrate 101 of the organic EL display device 100 uses a glass substrate, making it difficult to form plugs and fine trenches with openings buried deep along the third direction D3, as formed in IC manufacturing processes. Therefore, in the organic EL display device 100 according to one embodiment of the present invention, the pixel electrode 140 is disposed below the bottom 212RB of the trench 212R along the third direction D3, and the conductive layer 132 is disposed at a shallower position below the pixel electrode 140 along the third direction D3. In addition, the trench 212 is formed by using sidewalls 206A and 206B formed by inorganic insulating layers 206, details of which will be described later. As a result, the width W1 of the bottom 140B (aperture 138) used to connect the flat portion 140T of the pixel electrode 140 and the conductive layer 132 is narrower than the width of a deep aperture. Since the groove 212 is independent of the photolithography resolution, the pixels 115 (sub-pixels 109R, 109G, and 109B) in the organic EL display device 100 can be miniaturized. It should be noted that the widths W1 and W6 can be adjusted according to the miniaturized groove 212.

[0079] [1-4. Materials of the components of the organic EL display device 100]

[0080] The substrate 101 uses a glass substrate, a quartz substrate, etc.

[0081] For example, semiconductor layer 122 may contain group 14 elements such as silicon (Si) or germanium (Ge), or oxides exhibiting semiconductor properties. For example, semiconductor layer 122 containing group 14 elements may contain crystalline silicon. The crystalline silicon may be low-temperature polycrystalline silicon (LTPS) or monocrystalline silicon. Furthermore, when semiconductor layer 122 is crystalline silicon, impurities corresponding to the polarity of the transistor are implanted into the source portion 124A and the drain portion 124B. For example, as oxides exhibiting semiconductor properties, metal oxides (oxide semiconductors) with semiconductor properties may be included.

[0082] For example, gate insulating layer 125, insulating layer 128, insulating layer 137, insulating layer 152, inorganic insulating layer 153, and inorganic insulating layer 156 can be made of common inorganic insulating materials such as silicon oxide (SiO2) and silicon oxynitride (SiON).

[0083] Insulating layers 131, 136, and 154 can be made of organic compounds selected from acrylic acid, polyimide, etc., which have excellent film surface flatness. Insulating layers 131, 136, 141, and 154 cover the unevenness caused by transistors and other semiconductor elements, and the surfaces of insulating layers 131, 136, and 154 are flat surfaces.

[0084] The sealing film 160 prevents impurities (water, oxygen, etc.) from entering the light-emitting element 150, transistor, etc. from the outside. Although not shown in the figure, for example, the insulating layer 152, the inorganic insulating layer 153, and the inorganic insulating layer 156 are directly connected around the organic EL display device 100. As a result, the intrusion of impurities from the outside is suppressed in the organic EL display device 100.

[0085] [2. Second Implementation]

[0086] Reference Figures 3 to 18 The manufacturing method of the organic EL display device 100 is described in general. Figure 5A and Figure 5B This is a timing diagram illustrating the manufacturing method of the organic EL display device 100. Figures 6 to 18 It means to Figure 2 The image shows a cross-sectional view of the structure of region 200, magnified from pixel 115. For comparison with... Figures 1-4 For identical or similar compositions, please provide details as needed.

[0087] like Figure 5A As shown, array layer 170 is formed. Figure 5A Step 10 (S10)). Specifically, as Figure 3 As shown, when manufacturing the organic EL display device 100 begins, a base layer 121 is formed on the first surface 101A of the substrate 101. A semiconductor layer 122 is formed on the base layer 121. Impurities are implanted into the semiconductor layer 122 to form a source portion 124A and a drain portion 124B. A gate insulating layer 125 is formed on the semiconductor layer 122 and on the base layer 121 where the semiconductor layer 122 is not formed. A conductive layer 126 is formed on the gate insulating layer 125. The conductive layer 126 includes a gate electrode 127. An insulating layer 128 is formed on the conductive layer 126 and on the gate insulating layer 125 where the conductive layer 126 is not formed. A capacitor line 130 is formed on the insulating layer 128. An insulating layer 131 is formed on the capacitor line 130 and on the insulating layer 128 where the capacitor line 130 is not formed. An opening portion 135 is formed. Each opening perforates the gate insulating layer 125, insulating layer 128, and insulating layer 131, exposing the wiring, semiconductor layer, or electrode corresponding to each opening. For example, opening 135 exposes semiconductor layer 122A (e.g., source portion 124A). Other openings also expose their respective corresponding wiring, semiconductor layers, or electrodes. A conductive layer 132 is formed on insulating layer 131. Conductive layer 132 (first electrode) includes electrode 132A. For example, electrode 132A is electrically connected to semiconductor layer 122 via opening 135. Figure 3 , Figure 4 as well as Figure 6As shown, insulating layers 136 and 137 are formed on the conductive layer 132 and on the insulating layer 131 where the conductive layer 132 is not formed. As described above, an array layer 170 is formed.

[0088] like Figure 3 , Figure 4 as well as Figure 6 As shown, the opening forms an opening portion 138 ( Figure 5A Step 11 (S11)). Each opening portion creates an opening in the insulating layer 136 and 137, exposing the wiring or electrode corresponding to each opening portion. For example, opening portion 138 exposes electrode 132A. The other opening portions also expose their respective corresponding wiring or electrodes.

[0089] A pixel electrode 140 is formed on the insulating layer 137, the inclined portion of the insulating layer 137, the inclined portion of the insulating layer 136, and on the electrode 132A exposed at the opening 138. Figure 5A Step 12 (S12). For example, pixel electrode 140 is described as a second electrode.

[0090] A conductive layer 143 is formed on top of the insulating layer 137. Figure 5A Step 13 (S13). As described in "1-3. Cross-section of the organic EL display device 100", the conductive layer 143 is disposed separately from the planar portion 140T on the same layer as the planar portion 140T of the pixel electrode 140. For example, the conductive layer 143 is described as a third electrode.

[0091] An insulating layer 141 is formed on top of the pixel electrode 140, the conductive layer 143, and the insulating layer 137 on which the pixel electrode 140 and the conductive layer 143 are not formed. Figure 5A Step 14 (S14). For example, the insulating layer 141 is set as an inorganic insulating layer.

[0092] An insulating layer 202 is formed on the insulating layer 141 and on the pixel electrode 140 where the insulating layer 141 is not formed. Figure 5A Step 15 (S15). For example, the insulating layer 202 comprises silicon nitride (SiN). For example, the insulating layer 202 is described as a first inorganic insulating layer.

[0093] An insulating layer 204 is formed on top of an insulating layer 202 that overlaps with a portion of the conductive layer 143 and the insulating layer 141. Figure 5A Step 16 (S16). For example, insulating layer 204 comprises silicon oxide (SiO2). For example, insulating layer 204 is described as a second inorganic insulating layer.

[0094] An inorganic insulating layer 206 is formed on the insulating layer 202 where no insulating layer 204 is formed, and on the upper surface (surface) and side surfaces (sidewalls) of the insulating layer 204. Figure 5A Step 17 (S17). For example, the inorganic insulating layer 206 comprises silicon nitride (SiN). For example, the inorganic insulating layer 206 is described as a third inorganic insulating layer.

[0095] like Figure 7 As shown, the inorganic insulating layer 206 on the upper surface (surface) of the insulating layer 204 and the inorganic insulating layer 206 above the insulating layer 202 are removed by anisotropic dry etching, leaving a portion of the inorganic insulating layer 206 formed on the side (sidewall) of the insulating layer 204, forming sidewalls 206A and 206B. Figure 5A Step 18 (S18)).

[0096] like Figure 8 As shown, the insulating layer 204 is removed. Figure 5A Step 19 (S19) involves applying a first resist 208 onto the insulating layer 202 where sidewalls 206A and 206B are not formed. Figure 5A Step 20 (S20)). Using the surface of the insulating layer 202 as a reference, the height H1 is adjusted so that the height H2 of the uppermost part of the sidewalls 206A and 206B is higher than the height (thickness) H1 of the surface of the first resist 208. The first resist 208 is a resist with good flatness.

[0097] like Figure 9 As shown, sidewalls 206A and 206B are removed, and the first resist 208 is used as a mask to remove the insulating layer 202 exposed by the removal of sidewalls 206A and 206B, forming openings 210A and 210B. Figure 5A Step 21 (S21)).

[0098] like Figure 10 As shown, using the first resist 208 and the insulating layer 202 as a mask, the insulating layer 141 exposed by the removal of the insulating layer 202 is removed, forming grooves 212R and 212G that expose a portion of the conductive layer 143. Figure 5A Step 22 (S22)). For example, the width W2 of slot 212R and the width W3 of slot 212G can be greater than 180nm and less than 220nm. As an example, the width W2 of slot 212R and the width W3 of slot 212G are 200nm.

[0099] like Figure 11 As shown, the first resist 208 and the insulating layer 202 are removed. Figure 5B Step 23 (S23)).

[0100] After forming groove 212, sub-pixels 109R, 109G, and 109B are formed using the same steps. The steps for forming sub-pixel 109R will be explained here. Figure 12 As shown, a second resist 214 is coated on a portion of the insulating layer 141 to mask sub-pixels 109G and 109B other than sub-pixel 109R. Figure 5B Step 24 (S24)).

[0101] like Figure 13 As shown, a functional layer 145 is formed (here, a light-emitting layer 145R for emitting red light). Figure 5B Step 25 (S25). Since the light-emitting layer 145R is formed using a vapor deposition method, it is at least not formed at the bottom 212RB of the trench 212R, and is disconnected by the trench 212R. That is, the light-emitting layer 145R is formed on the pixel electrode 140 where the insulating layer 141 is not formed and on the insulating layer 141 where the second resist 214 is not coated, and is not formed in the trench 212R, disconnected by the trench 212R. Therefore, the light-emitting layer 145R is connected to a portion of the planar portion 140T of the pixel electrode 140, and is separated from and not connected to the conductive layer 143. As a result, for example, as... Figure 3 As shown, groove 212R surrounds light-emitting layer 145R. It should be noted that groove 212G surrounds light-emitting layer 145G, and groove 212B surrounds light-emitting layer 145B.

[0102] like Figure 13 As shown, a common electrode 149 is formed on the light-emitting layer 145R using a sputtering apparatus, and a groove 212RI is formed. Figure 5B Step 26 (S26)). Specifically, a common electrode 149 is formed by using a sputtering apparatus, thereby embedding the common electrode 149 into the upper surface and side surfaces of the light-emitting layer 145R, as well as the sidewalls 212RW and bottom 212RB of the trench 212R. As a result, the common electrode 149 is connected to a portion of the conductive layer 143 exposed through the trench 212R. The trench of the common electrode 149, which is formed inside the trench 212R reflecting the shape of the trench 212R, is called trench 212RI. For example, the common electrode 149 is referred to as the fourth electrode.

[0103] like Figure 13 As shown, an insulating layer 152 is formed. Figure 5B Step 27 (S27). The insulating layer 152, like the light-emitting layer 145R, is formed using a vapor deposition method, and therefore is not formed at the bottom of the trench 212RI, but is disconnected with respect to the trench 212RI. That is, the insulating layer 152 is formed on the common electrode 149 outside the trench 212RI, but not within the trench 212RI, and is disconnected with respect to the trench 212RI. Therefore, the insulating layer 152 is formed separately from the conductive layer 143. The insulating layer 152 is a so-called capping layer used to protect the common electrode 149 and the light-emitting layer 145R.

[0104] like Figure 14As shown, an inorganic insulating layer 153 is formed inside the groove 212RI and on the surface of the insulating layer 152. Figure 5B Step 28 (S28)).

[0105] like Figure 15 As shown, a third resist 216 is formed on a portion of the insulating layer 152 (surface). Figure 5B Step 29 (S29)).

[0106] like Figure 16 As shown, for example, the inorganic insulating layer 153, excluding the inorganic insulating layer 153 overlapping with the third resist 216, is removed by anisotropic dry etching. Figure 5B Step 30 (S30)). In S30, a portion of the inorganic insulating layer 153, i.e. the inorganic insulating layer that does not overlap with the third resist 216, is removed.

[0107] For example, such as Figure 17 As shown, in the case where the insulating layer 152, which extends further along the first direction D1 and the second direction D2 than the inorganic insulating layer 153 formed in the trench 212RI, is an organic insulating layer, for example, it can be removed by oxygen plasma treatment. Figure 5B Step 31 (S31)). At this time, the third resist 216 is also removed by oxygen plasma. In S31, the third resist 216 and a portion of the insulating layer 152, namely the insulating layer 152 that does not overlap with the third resist 216 and the insulating layer 152 below the eaves 153RE of the inorganic insulating layer 153 in the direction of the third third direction D3, are removed.

[0108] like Figure 17 As shown, for example, the common electrode 149, which extends further along the first direction D1 and the second direction D2 than the inorganic insulating layer 153 formed in the trench 212RI, and is excluding the common electrode 149 between the insulating layer 141A and the trench 212RI, is removed by dry etching. Figure 5B Step 32 (S32)). In S32, a portion of the common electrode 149, namely the common electrode 149 that does not overlap with the inorganic insulating layer 153 and the common electrode 149 between the eaves 153RE and the groove 212R of the inorganic insulating layer 153 in the direction of the third direction D3, is removed.

[0109] like Figure 18 As shown, for example, oxygen plasma treatment is used to remove the portion of the light-emitting layer 145R that extends further along the first direction D1 and the second direction D2 than the inorganic insulating layer 153 formed in the trench 212RI, as well as the second resist 214. Figure 5B Step 33 (S33)). The result is the formation of the eaves 153RE (see reference). Figure 17 ).

[0110] Through steps S24 to S33, a structure is formed up to the inorganic insulating layer 153 in sub-pixel 109R. Similarly, by repeatedly performing steps S24 to S33, a structure is formed up to the inorganic insulating layer 153 in sub-pixels 109G and 109B.

[0111] like Figure 3 and Figure 4 As shown, after S33, an organic insulating layer 154 is formed over the space 162 between the eaves 153RE and the insulating layer 141A, which is disposed below the eaves 153RE along the third direction D3, and over the inorganic insulating layer 153. After the organic insulating layer 154 is formed, an inorganic insulating layer 156 and a cover film 158 are formed. As described above, an organic EL display device 100 is formed.

[0112] An organic EL display device 100 is formed using the manufacturing method described above. The manufacturing method of the organic EL display device 100 includes: forming a pixel electrode 140 positioned below the bottom 212RB of the trench 212R along a third direction D3; and forming a conductive layer 132 at a shallow position below the pixel electrode 140 along a third direction D3. The manufacturing method of the organic EL display device 100 includes forming the trench 212 using sidewalls 206A and 206B formed by using inorganic insulating layers 206. As a result, the manufacturing method of the organic EL display device 100 allows the width W1 of the flat portion 140T connecting the pixel electrode 140 and the bottom 140B (opening portion 138) of the conductive layer 132 to be narrower than the width of a deeply formed opening, enabling the formation of trench widths W2 and W3 with resolution independent of photolithography, and enabling miniaturization of the pixels 115 (sub-pixels 109R, 109G, and 109B).

[0113] The embodiments or parts thereof described above as embodiments of the present invention can be appropriately combined and implemented as long as they do not contradict each other.

[0114] Even if other effects are different from those brought about by the technical solutions of the above embodiments, as long as they are effects that are clearly defined according to the description in this specification or effects that can be easily predicted by those skilled in the art, they can of course be understood as effects brought about by the present invention.

Claims

1. An organic EL display device comprising a plurality of pixels arranged in a first direction and a second direction, wherein the second direction intersects the first direction. The plurality of pixels respectively include: First electrode; A first insulating layer is disposed on the first electrode; An opening is provided in the first insulating layer and includes a sidewall and a first bottom of the first insulating layer. The first bottom is connected to the sidewall and exposes a portion of the surface of the first electrode. The second electrode is disposed on the first insulating layer and is in contact with the first insulating layer, the sidewall and the first electrode. The second electrode is in contact with the first electrode at the first bottom. A portion of the third electrode is disposed separately from the second electrode in the same layer as the second electrode; An EL element is disposed on the second electrode and the third electrode, and is connected to the second electrode; A second insulating layer is disposed between the EL element and the second electrode and between the EL element and the third electrode, and is in contact with the EL element, the second electrode and the third electrode; A first groove is disposed in the second insulating layer and includes a sidewall and a second bottom of the second insulating layer, the second bottom being connected to the sidewall and exposing a portion of the surface of the third electrode; as well as A fourth electrode is disposed on the EL element and is connected to the EL element, the sidewall, and the third electrode. The fourth electrode is connected to the third electrode at the second bottom. The first bottom is located at a deeper position from the upper surface of the second insulating layer compared to the second bottom.

2. The organic EL display device according to claim 1, wherein, The width of the first bottom is wider than the width of the second bottom.

3. The organic EL display device according to claim 1, wherein, The second electrode includes a flat portion connected to the first bottom. The EL element is connected to the flat portion.

4. The organic EL display device according to claim 1, wherein, The organic EL display device also includes: A third insulating layer is disposed on the fourth electrode; and A fourth inorganic insulating layer is disposed above the third insulating layer and in the second groove, the second groove being disposed at the fourth electrode.

5. The organic EL display device according to claim 4, wherein, The EL element and the third insulating layer are disposed separately from the second bottom.

6. The organic EL display device according to claim 4, wherein, The fourth inorganic insulating layer includes an eaves. When viewed in cross-section, the eaves extend further in the second direction than the first groove.

7. The organic EL display device according to claim 4, wherein, The plurality of pixels each include at least a first sub-pixel and a second sub-pixel.

8. The organic EL display device according to claim 7, wherein, The EL elements of the first sub-pixel and the EL elements of the second sub-pixel emit light of different colors and are separated from each other by being surrounded by the first and second slots of different colors.

9. The organic EL display device according to claim 7, wherein, The fourth electrode of the first sub-pixel and the fourth electrode of the second sub-pixel are connected via their respective third electrodes.

10. The organic EL display device according to claim 7, wherein, The organic EL display device also includes an organic insulating layer. The second insulating layer is disposed between the first slot of the first sub-pixel and the first slot of the second sub-pixel. The eaves of the first sub-pixel and the eaves of the second sub-pixel are set off from the ground. The organic insulating layer is disposed on the eaves of the first sub-pixel, the eaves of the second sub-pixel, the space between the second insulating layer between the first slot of the first sub-pixel and the first slot of the second sub-pixel, and on the fourth inorganic insulating layer.

11. A method for manufacturing an organic EL display device, the organic EL display device comprising a plurality of pixels arranged in a first direction and a second direction, the second direction intersecting the first direction. The plurality of pixels respectively include: First electrode; A first insulating layer is disposed on the first electrode; An opening is provided in the first insulating layer and includes a sidewall and a first bottom of the first insulating layer. The first bottom is connected to the sidewall and exposes a portion of the surface of the first electrode. The second electrode is disposed on the first insulating layer and is in contact with the first insulating layer, the sidewall and the first electrode. The second electrode is in contact with the first electrode at the first bottom. A portion of the third electrode is disposed separately from the second electrode in the same layer as the second electrode; An EL element is disposed on the second electrode and the third electrode, and is connected to the second electrode; A second insulating layer is disposed between the EL element and the second electrode and between the EL element and the third electrode, and is in contact with the EL element, the second electrode and the third electrode; A first groove is disposed in the second insulating layer and includes a sidewall and a second bottom of the second insulating layer, the second bottom being connected to the sidewall and exposing a portion of the surface of the third electrode; as well as A fourth electrode is disposed on the EL element and is connected to the EL element, the sidewall, and the third electrode. The fourth electrode is connected to the third electrode at the second bottom. The first bottom is located at a deeper position from the upper surface of the second insulating layer compared to the second bottom. The manufacturing method includes: A first inorganic insulating layer is formed on the second electrode where no second insulating layer is provided and on the second insulating layer; A second inorganic insulating layer is formed on top of the first inorganic insulating layer that overlaps with a portion of the third electrode and the second insulating layer; A third inorganic insulating layer is formed on the first inorganic insulating layer on which the second inorganic insulating layer is not formed, as well as on the side surface and the top surface of the second inorganic insulating layer; A sidewall is formed by removing a portion of the third inorganic insulating layer on top of the first inorganic insulating layer over which the second inorganic insulating layer has not yet formed, the third inorganic insulating layer on the upper surface, and the third inorganic insulating layer on the side surface; and The first groove is formed using the sidewall.

12. The method for manufacturing an organic EL display device according to claim 11, wherein, Forming the first groove using the sidewall includes: After the sidewalls are formed, the second inorganic insulating layer is removed; A first resist is applied over the first inorganic insulating layer, excluding the first inorganic insulating layer on which the sidewalls are formed; Remove the sidewalls; Remove the first inorganic insulating layer exposed by removing the sidewall; Remove the second insulating layer exposed by removing the first inorganic insulating layer; and A portion of the third electrode is exposed by removing the second insulating layer.

13. The method for manufacturing an organic EL display device according to claim 12, wherein, After forming the first groove, the manufacturing method includes: A second resist is applied to a portion of the second insulating layer; The EL element is formed on the second electrode other than the second electrode on which the second insulating layer is provided, and on the second insulating layer other than the second insulating layer on which the second resist is coated, such that a portion of the flat portion of the second electrode is connected to a portion of the EL element. The fourth electrode is formed on the EL element, on the sidewall, and on the second bottom, such that the fourth electrode is connected to a portion of the exposed third electrode; The second groove is formed by forming the fourth electrode; A third insulating layer is formed on the fourth electrode; and A fourth inorganic insulating layer is formed inside the second groove and on top of the third insulating layer.

14. The method for manufacturing an organic EL display device according to claim 13, wherein, Forming the EL element includes forming the EL element separately from the third electrode. Forming the third insulating layer includes forming the third insulating layer separately from the third electrode.

15. The method for manufacturing an organic EL display device according to claim 14, wherein, After forming the fourth inorganic insulating layer, the manufacturing method includes: A third corrosion resist is applied over the fourth inorganic insulating layer; Remove the fourth inorganic insulating layer except for the fourth inorganic insulating layer that overlaps with the third resist; Remove the third insulating layer that extends further along the first and second directions than the fourth inorganic insulating layer formed in the second trench; Remove the fourth electrode, which extends further along the first and second directions than the fourth inorganic insulating layer formed in the second trench and is other than the fourth electrode between the second insulating layer and the second trench; Remove the EL element from the EL element that extends further along the first and second directions than the fourth inorganic insulating layer formed in the second trench; and Forming the eaves.

16. The method for manufacturing an organic EL display device according to claim 15, wherein, The first and second slots are formed in a manner that surrounds the EL element.

17. The method for manufacturing an organic EL display device according to claim 15, wherein, The manufacturing method includes: An organic insulating layer is formed in the space between the eaves and the second insulating layer disposed below the eaves along the third direction, and on the fourth inorganic insulating layer.

18. The method for manufacturing an organic EL display device according to claim 11, wherein, The manufacturing method includes: Form the first electrode; A first insulating layer is formed on the first electrode; An opening is formed on the first insulating layer, the opening including a sidewall of the first insulating layer and a first bottom, the first bottom being connected to the sidewall and exposing a portion of the surface of the first electrode; A second electrode is formed on the first insulating layer, the second electrode being in contact with the first insulating layer, the sidewall, and the first electrode, and the second electrode being in contact with the first electrode at the first bottom; and The third electrode is formed separately from the second electrode in the same layer as the flat portion of the second electrode. The first bottom is located at a deeper position from the upper surface of the second insulating layer compared to the second bottom.

19. The method for manufacturing an organic EL display device according to claim 12, wherein, The width of the first bottom is wider than the width of the second bottom.

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