Method for temporary bonding and debonding of non-transparent carrier boards and composite carrier board structure

Abstract

This invention relates to a method for temporary bonding and debonding of a non-transparent substrate and a composite substrate structure, comprising: providing a temporary substrate, the temporary substrate being a non-transparent material; forming a temporary bonding structure on one side of the temporary substrate, the temporary bonding structure including a temporary bonding material and an energy transfer structure disposed within the temporary bonding material; temporarily fixing a device structure to be processed onto the temporary substrate via the temporary bonding structure; performing at least one semiconductor manufacturing process on the device structure to be processed based on the support of the temporary substrate; inputting laser energy into the energy transfer structure, causing the laser energy to be transferred to a release region in the temporary bonding structure via the energy transfer structure; the release region undergoing physical or chemical changes under the action of the laser energy, reducing the adhesive performance of the temporary bonding structure; separating the temporary substrate from the device structure to be processed, thereby achieving debonding, thus enabling temporary bonding and low-stress debonding on a non-transparent substrate, overcoming the limitations of traditional transparent substrates.

Description

Technical Field

[0001] This invention relates to temporary bonding and debonding processes in advanced semiconductor packaging, and more particularly to laser debonding of non-transparent substrates using embedded energy transfer structures. Background Technology

[0002] With the continuous development of integrated circuit technology, chip integration density is constantly increasing, chip size is continuously shrinking, and advanced packaging technology is gradually developing towards high-density, multi-chip integration, and three-dimensional interconnection. In recent years, technologies such as 2.5D / 3D packaging, through-silicon via (TSV) packaging, fan-out wafer level package (FOWLP), chiplet heterogeneous integration, and ultra-thin power device manufacturing have developed rapidly, placing higher demands on the mechanical support, processing stability, and packaging reliability in wafer-level and panel-level packaging processes.

[0003] In the aforementioned advanced packaging processes, thinning, etching, metallization, electroplating, and redistribution layer (RDL) fabrication are typically required for device wafers or reconstructed wafers. However, when device wafers are thinned to a small thickness, their rigidity decreases significantly, making them prone to warping, cracking, and thickness uniformity deviations during processing. Therefore, existing processes typically employ temporary bonding technology, fixing the wafer or device structure to be processed onto a rigid substrate using a temporary bonding adhesive layer. This rigid substrate provides mechanical support, ensuring stable subsequent processing.

[0004] After the back-side processing or packaging is completed, the device structure needs to be separated from the temporary substrate through a debonding process. An ideal debonding process requires separating the substrate while minimizing mechanical stress, and avoiding damage to critical structures such as the metal structure, RDL structure, and microbumps on the device surface. Therefore, Temporary Bonding and Debonding (TBDB) has become a crucial foundational process in the manufacturing of ultra-thin wafers and advanced packaging.

[0005] Currently, laser-based photodebonding technology is commonly used in advanced packaging. This technology typically involves placing a laser thermal release layer on the surface of a temporary carrier substrate and forming a temporary bonding adhesive layer on top of it. When a transparent carrier substrate (such as a glass substrate) is used, the external laser can penetrate the substrate and act on the LTHC release layer. This causes the release layer to absorb laser energy and undergo thermal decomposition, gas generation, or interface weakening, thereby reducing the bonding strength of the temporary bonding interface and achieving separation between the carrier substrate and the device structure.

[0006] However, existing laser debonding techniques based on transparent substrates have significant limitations. Since the laser needs to penetrate the temporary substrate to reach the release area, existing techniques typically require the temporary substrate to have good light transmittance, making it difficult to apply this technology to metal substrates, silicon substrates, fiberglass substrates, and other non-transparent substrates.

[0007] On the other hand, with the development of advanced packaging technologies, non-transparent substrates have potential applications in wafer-level or panel-level packaging processes involving single-sided and double-sided symmetrical temporary bonding due to their advantages such as higher mechanical strength, better thermal stability, lower cost, or suitability for specific packaging processes. However, the limitations of traditional laser debonding methods by optical transmission paths make it difficult for non-transparent substrates to be compatible with existing laser debonding processes, thus restricting the range of temporary substrate materials and the development of advanced packaging technologies.

[0008] Therefore, it is necessary to improve the bonding and debonding techniques of existing packaging processes. Summary of the Invention

[0009] To achieve the above-mentioned objectives, the present invention provides a method for temporary bonding and debonding on a non-transparent substrate, comprising: A temporary carrier plate is provided, wherein the temporary carrier plate is made of a non-transparent material; A temporary bonding structure is formed on one side of the temporary carrier plate. The temporary bonding structure includes a temporary bonding material and an energy transfer structure disposed inside the temporary bonding material. The structure of the device to be processed is temporarily fixed to the temporary carrier plate by the temporary bonding structure; Based on the support of the temporary carrier board, at least one semiconductor manufacturing process is performed on the device structure to be processed; Laser energy is input into the energy transfer structure, so that the laser energy is transmitted through the energy transfer structure to the release region in the temporary bonding structure; The release region is the area in the temporary bonded structure that responds to the laser energy and reduces the bonding strength. The release region undergoes physical or chemical changes under the action of the laser energy, thereby reducing the adhesive performance of the temporary bonded structure. Separate the temporary carrier board from the structure of the device to be processed to achieve debonding.

[0010] This invention enables laser energy to bypass the non-transparent carrier and be transmitted to the release area by setting an energy transmission structure in the temporary bonding structure on the non-transparent carrier, thereby achieving temporary bonding and low-stress debonding on the non-transparent carrier and breaking through the limitations of traditional transparent carriers.

[0011] Optionally, the energy transmission structure includes at least one optical fiber; The optical fiber includes at least: The input terminal used to receive laser energy; The output end for releasing laser energy; The release end is located close to the release area so that the laser energy can act on the release area.

[0012] This invention uses an optical fiber with an input end and a release end to transmit laser energy, enabling the laser to act precisely on the release region, thereby improving the controllability and effectiveness of the debonding process.

[0013] Optionally, the optical fiber is embedded inside the temporary bonding material, so that the optical fiber and the temporary bonding material form an integrated composite structure.

[0014] This invention embeds optical fibers inside temporary bonding materials, forming an integrated structure between the optical fiber and the bonding layer, ensuring stable optical energy transmission and improving the reliability of the temporary bonding structure.

[0015] Optionally, the refractive index of the optical fiber satisfies: nair < ​​noptic fiber < ntemporary bonding material; To make: Total internal reflection occurs at the interface between air and optical fiber; Light energy transmission occurs at the interface between the optical fiber and the temporary bonding material.

[0016] This invention improves laser utilization efficiency by setting the refractive index relationship between the optical fiber, air, and temporary bonding material to achieve confined propagation of energy within the optical fiber and effective coupling into the bonding material.

[0017] Optionally, the projection area of ​​the optical fiber on the temporary carrier board adopts at least one of the following arrangements: serpentine arrangement; spiral arrangement; grid arrangement; array arrangement.

[0018] This invention utilizes serpentine, spiral, grid, or array-type fiber optic layouts to enable laser energy to cover a larger area, achieving uniform debonding at the large wafer or panel level.

[0019] Optionally, the optical fiber includes a single-layer optical fiber structure or a multi-layer optical fiber structure; In this multi-layer fiber structure, different layers of optical fibers are used to cover different areas of the temporary carrier plate to improve the laser energy coverage range.

[0020] This invention improves the energy transmission coverage by employing single-layer or multi-layer optical fiber structures, adapting to wafer-level and panel-level packaging requirements of different sizes and structures.

[0021] Optionally, the temporary bonding structure includes: A laser heat release layer disposed on the temporary carrier plate; A temporary bonding adhesive layer covering the laser heat release layer; The energy transfer structure is disposed inside the temporary bonding adhesive layer or inside or adjacent to the laser heat release layer.

[0022] By combining the energy transfer structure with the laser heat release layer and the temporary bonding adhesive layer, the laser energy is effectively transferred to the release interface, reducing the difficulty of separating the carrier plate.

[0023] Optionally, the release area includes the laser heat release layer; The laser energy acts on the laser heat release layer, causing thermal decomposition, gas release, or interface weakening of the laser heat release layer, thereby reducing the bonding strength of the temporary bonding structure.

[0024] By using lasers to cause thermal decomposition, gas generation, or interface weakening of the heat release layer, rapid and low-damage carrier detachment is achieved, reducing the mechanical stress impact on the device structure.

[0025] Optionally, the non-transparent material includes at least one of the following: a metallic material; a silicon material; a glass fiber reinforced material; a polymer material; or a printed circuit board material.

[0026] By supporting non-transparent materials such as metals, silicon, polymers, and PCBs as temporary carriers, the material applicability of temporary bonding processes is expanded, and process flexibility is improved.

[0027] Optionally, the device structure to be processed includes: an ultrathin wafer; a reconstructed wafer; a chip; a silicon bridge; and passive electronic devices. The semiconductor manufacturing process includes: wafer thinning; molding; RDL layer preparation; metallization; electroplating; etching; and photolithography.

[0028] By applying this method to advanced packaging objects such as ultrathin wafers, reconstructed wafers, chips, and silicon bridges, compatibility with various semiconductor manufacturing processes can be achieved.

[0029] To achieve the above-mentioned objectives, the present invention provides a composite carrier structure for temporary bonding and debonding of non-transparent carrier plates, comprising: Non-transparent temporary carrier plate; A temporary bonding layer disposed on one side of the non-transparent temporary carrier plate; An energy transfer structure disposed within the temporary bonding layer; The release region is provided in the temporary bonding layer; in: The energy transmission structure is used to receive laser energy and transmit the laser energy to the release area; The release region responds to the laser energy and changes the bonding state between the temporary bonding layer and the non-transparent temporary carrier.

[0030] By constructing a composite carrier structure comprising a non-transparent carrier plate, a temporary bonding layer, an energy transfer structure, and a release region, a dedicated process carrier for debonding non-transparent carrier plates is realized.

[0031] Optionally, the energy transmission structure includes an optical fiber; The optical fiber extends along the surface of the non-transparent temporary carrier plate and at least covers a portion of the area corresponding to the release area.

[0032] By placing optical fibers covering the release area inside the temporary bonding layer, laser energy can be distributed and the uniformity of debonding over a large area can be improved.

[0033] The optical fiber includes multiple branch segments with the input end optically coupled to the input end, and each branch segment is provided with at least one output optical fiber segment; The multiple fiber segments are used to distribute laser energy to multiple release areas.

[0034] By setting up an optical fiber branch structure, multi-path transmission of laser energy can be achieved, improving the energy coverage capability in complex structures or large-size carrier plates.

[0035] Optionally, the temporary bonding layer includes: a heat-release layer; and an adhesion layer; The energy transfer structure is located between the heat release layer and the adhesion layer, or embedded inside the heat release layer.

[0036] By optimizing the positional relationship between the heat release layer, the adhesion layer, and the energy transfer structure, the debonding efficiency is improved, and the bonding residue and interface damage are reduced.

[0037] Optionally, the non-transparent temporary carrier is a metal carrier, a silicon carrier, or a glass fiber reinforced carrier, and the non-transparent temporary carrier can be a wafer-level packaging carrier or a panel-level packaging carrier.

[0038] By supporting various carrier formats such as metal carriers, silicon carriers, and panel-level carriers, the freedom of carrier selection in advanced packaging processes is increased.

[0039] To achieve the above-mentioned objective, the present invention provides a two-sided facet time bonding and debonding method, comprising: forming a first temporary bonding structure on a first temporary carrier using the method described above; Complete chip packaging and interconnect fabrication on the first surface; Release the first temporary bond structure; A second temporary bonding structure is formed on the other side of the already processed structure; Complete the chip packaging and interconnect fabrication on the second surface; Carrier separation is achieved through at least one laser debonding process.

[0040] By employing a two-sided time-bonding and debonding process, double-sided packaging is achieved, improving packaging integration and expanding advanced packaging process capabilities.

[0041] Optionally, the first temporary bonding structure and the second temporary bonding structure each include an embedded optical fiber structure; The first temporary bonding structure and the second temporary bonding structure are used to form a symmetrical double-sided support structure to reduce warping during the packaging process.

[0042] By setting embedded fiber structures in both sides, stable support is achieved during the double-sided processing, and packaging warpage is reduced.

[0043] Optionally, the method is applied to at least one of the following packaging processes: wafer-level packaging (WLP); fan-out wafer-level packaging (FOWLP); fan-out board-level packaging (FOPLP); 2.5D packaging; 3D packaging; chiplet heterogeneous integration packaging; and TSV packaging.

[0044] By being compatible with wafer-level packaging, fan-out packaging, 2.5D / 3D packaging, and chiplet integration, this technology can be applied in a variety of advanced packaging scenarios.

[0045] Optionally, the temporary bonding structure is formed in the following ways: first forming a temporary bonding adhesive layer, and then embedding the optical fiber into the temporary bonding adhesive layer; or, first arranging the optical fiber, and then coating the optical fiber with a temporary bonding adhesive layer to cover the optical fiber; or, using a temporary bonding adhesive dry film pre-embedded with the optical fiber to form the temporary bonding structure.

[0046] By providing a variety of fiber embedding and bonding structure formation methods, the process implementation flexibility is improved and it can be adapted to different manufacturing processes.

[0047] Optionally, the temporary carrier is removed after debonding, and residual temporary bonding material is removed by a cleaning process.

[0048] By cleaning the residual adhesive after debonding, the carrier board can be separated without damage and a high-quality packaging structure can be output, thereby improving the reliability of the final product. Attached Figure Description

[0049] Figure 1 A schematic diagram of the composite carrier plate structure provided for an embodiment of the present invention; Figure 2 Schematic diagrams of different fiber optic arrangements in a composite carrier structure provided for embodiments of the present invention; Figure 3A schematic diagram illustrating the steps of temporary bonding and debonding on a non-transparent carrier plate provided for embodiments of the present invention; Figure 4 A schematic diagram illustrating the steps of temporary bonding and debonding on a non-transparent carrier plate provided for embodiments of the present invention; Figure 5 A schematic diagram illustrating the steps of temporary bonding and debonding on a non-transparent carrier plate provided for embodiments of the present invention; Figure 6 A schematic diagram illustrating the steps of temporary bonding and debonding on a non-transparent carrier plate provided for embodiments of the present invention. Detailed Implementation

[0050] To make the objectives, technical solutions, and advantages of this invention clearer, the invention will be further described in detail below with reference to the accompanying drawings and embodiments. It should be understood that the specific embodiments described herein are merely illustrative and not intended to limit the invention.

[0051] like Figure 1 and Figure 3 As shown, this embodiment provides a composite substrate structure for temporary bonding and debonding on a non-transparent substrate, and a method for temporary bonding and debonding using the above-mentioned composite substrate, including: A temporary carrier plate 100 is provided, which is made of a non-transparent material; A temporary bonding structure 200 is formed on one side of the temporary carrier plate 100. The temporary bonding structure 200 includes a temporary bonding material 210 and an energy transfer structure 220 disposed inside the temporary bonding material 210. The device structure 300 to be processed is temporarily fixed to the temporary carrier plate 100 by the temporary bonding structure 200; Based on the support of the temporary carrier 100, at least one semiconductor manufacturing process is performed on the device structure to be processed. Laser energy is input into the energy transfer structure 220, so that the laser energy is transferred to the release region in the temporary bonding structure 200 via the energy transfer structure 220. The release area undergoes physical or chemical changes under the action of laser energy, which reduces the adhesive properties of the temporary bonded structure 200. Separate the temporary carrier 100 from the device structure 300 to be processed to achieve debonding.

[0052] Optionally, the energy transmission structure includes at least one optical fiber; the optical fiber includes at least: an input end for receiving laser energy; and a release end for outputting laser energy. The release end is located close to the release area so that the laser energy can act on the release area.

[0053] The optical fiber is embedded inside the temporary bonding material 210, so that the optical fiber and the temporary bonding material form an integrated composite structure.

[0054] Optionally, the refractive index of the optical fiber satisfies: nair < ​​nfiber < ntemporary bonding material; This is to ensure that: total internal reflection occurs at the interface between air and optical fiber; and light energy transmission occurs at the interface between optical fiber and temporary bonding material.

[0055] This embodiment selects a suitable optical fiber material to ensure that its refractive index is lower than that of the temporary bonding adhesive but higher than that of air. In this way, the light can undergo total internal reflection at the air-fiber interface and continue to propagate, but it will be transmitted into the temporary bonding adhesive at the fiber-temporary bonding adhesive interface, thereby enabling the laser energy to propagate to a specific area through the optical fiber.

[0056] Optionally, such as Figure 2 As shown, the projection area of ​​the optical fiber on the temporary carrier 100 adopts at least one of the following arrangements: serpentine arrangement; spiral arrangement; grid arrangement; array arrangement.

[0057] Optionally, the optical fiber may include a single-layer optical fiber structure or a multi-layer optical fiber structure; In this multi-layer fiber structure, different layers of optical fibers are used to cover different areas of the temporary carrier plate 100 to improve the coverage range of laser energy.

[0058] The temporary bonding structure 200 includes: a laser heat release layer disposed on a temporary carrier 100; a temporary bonding adhesive layer covering the laser heat release layer; wherein the energy transfer structure 220 is disposed inside the temporary bonding adhesive layer or near the laser heat release layer.

[0059] Optionally, in some embodiments, the optical fiber includes an optical energy transmission section and at least one optical energy coupling section disposed along the fiber's extension direction. The optical energy transmission section is used to transmit laser energy input from the fiber's input end along the fiber's extension direction. The optical energy coupling section is disposed near the release region to change the optical transmission state within a local area of ​​the optical fiber, causing at least a portion of the laser energy propagating in the fiber to be laterally coupled out of the fiber and act on an adjacent release region. The optical energy coupling section can be formed by at least one of the following methods: locally thinning or removing the fiber cladding, roughening or side-polishing the fiber sidewalls, providing a scattering structure, a micro-bending structure, or a grating coupling structure. Multiple optical energy coupling sections can be spaced apart along the extension direction of the optical fiber, so that laser energy is coupled out from the optical fiber at multiple locations. When the optical fiber is arranged in a serpentine, spiral, grid, or array configuration, the distribution area of ​​the multiple optical energy coupling sections along the optical fiber corresponds to different positions of the release area, so that the laser energy can be transmitted and distributed to the release area by the optical fiber without penetrating the non-transparent temporary carrier plate, causing thermal decomposition, gas release, or interface weakening in the release area, thereby reducing the bonding strength of the temporary bonding structure and achieving debonding.

[0060] Optionally, the release area includes a laser thermal release layer; laser energy acts on the laser thermal release layer, causing thermal decomposition, gas release, or interface weakening of the laser thermal release layer, thereby reducing the bonding strength of the temporary bonding structure.

[0061] Optionally, the non-transparent material includes at least one of the following: metallic materials; silicon materials; glass fiber reinforced materials; polymer materials; printed circuit board materials.

[0062] Optionally, the device structure to be processed includes: an ultrathin wafer; a reconstructed wafer; a chip; a silicon bridge; and passive electronic devices; wherein the semiconductor manufacturing process includes: wafer thinning; molding; RDL layer preparation; metallization; electroplating; etching; and photolithography.

[0063] This embodiment provides a composite carrier structure for temporary bonding and debonding of a non-transparent carrier, comprising: a non-transparent temporary carrier; a temporary bonding layer disposed on one side of the non-transparent temporary carrier; an energy transfer structure disposed within the temporary bonding layer; and a release region disposed in the temporary bonding layer; wherein: the energy transfer structure is used to receive laser energy and transfer the laser energy to the release region; The region responds to laser energy and changes the bonding state between the temporary bonding layer and the non-transparent temporary carrier.

[0064] Optionally, the energy transmission structure includes an optical fiber; the optical fiber extends along the surface of the non-transparent temporary carrier plate and at least covers a portion of the area corresponding to the release area.

[0065] Optionally, the optical fiber includes: an input optical fiber segment; an output optical fiber segment; and multiple optical fiber branches; wherein the multiple optical fiber branches are used to distribute laser energy to multiple release regions.

[0066] Furthermore, in some embodiments, the optical fiber can form a branched optical energy transmission structure, including an input fiber segment, multiple branch fiber segments optically coupled to the input fiber segment, and at least one output fiber segment optically coupled to each of the branch fiber segments. Laser energy input from an external laser source is first transmitted through the input fiber segment and then distributed to different output fiber segments via the multiple branch fiber segments. Each output fiber segment corresponds to one or more release regions in the temporary bonding structure, thereby enabling the laser energy to be distributed to different regions of the temporary carrier via different optical transmission paths. The multiple branch fiber segments and output fiber segments can be arranged according to the size of the temporary carrier, the location of the release regions, and the required laser energy distribution to improve the laser energy coverage of different release regions in large-size wafer-level or panel-level temporary bonding structures.

[0067] Furthermore, in some embodiments, to improve the uniformity of laser energy received in different release areas, multiple optical energy coupling sections arranged along the laser propagation direction of the optical fiber can have the same or different optical energy coupling capabilities. Considering that laser energy may experience certain transmission and coupling losses during optical fiber propagation and when passing through the preceding optical energy coupling section, the optical energy coupling capability at different locations can be adjusted according to the distance between each optical energy coupling section and the optical fiber input end. For example, along the direction away from the optical fiber input end, the coupling capability of at least some optical energy coupling sections can be gradually increased to compensate for optical fiber propagation loss and energy attenuation caused by the preceding optical energy coupling section, so that release areas located at different locations obtain relatively uniform laser energy. The optical energy coupling capability can be adjusted by adjusting at least one of the following: the length and area of ​​the optical energy coupling section, the degree of cladding thinning or removal, the degree of fiber sidewall roughening, the size or distribution density of the scattering structure, the degree of microbending, and the grating structure parameters. The specific coupling capability of different optical energy coupling sections can be set according to the arrangement of optical fibers, the length of optical transmission path, the position of each release area and the required debonding energy, thereby reducing the difference in the degree of release caused by uneven laser energy distribution between different areas of the temporary carrier and improving the debonding uniformity of large-size wafer-level or panel-level temporary bonding structures.

[0068] Optionally, the temporary bonding layer includes: a heat release layer; an adhesion layer; wherein the energy transfer structure is located between the heat release layer and the adhesion layer, or embedded inside the heat release layer.

[0069] Alternatively, the non-transparent temporary carrier can be a metal carrier, a silicon carrier, or a panel-level packaging carrier.

[0070] This embodiment provides a two-sided temporary bonding and debonding method. The method for temporary bonding and debonding on a non-transparent substrate, as provided in this embodiment, includes: A first temporary bonding structure is formed on the first temporary carrier. Complete chip packaging and interconnect fabrication on the first surface; Release the first temporary bond structure; A second temporary bonding structure is formed on the other side of the already processed structure; Complete the chip packaging and interconnect fabrication on the second surface; Carrier separation is achieved through at least one laser debonding process.

[0071] Optionally, the first temporary bonding structure and the second temporary bonding structure each include an embedded optical fiber structure; the first temporary bonding structure and the second temporary bonding structure are used to form a symmetrical double-sided support structure to reduce warping during the packaging process.

[0072] Optionally, the above method is applied to at least one of the following packaging processes: Wafer-level packaging (WLP); Fan-out wafer-level package (FOWLP); Fan-out board-level package (FOPLP); 2.5D packaging; 3D packaging; Chiplet heterogeneous integrated packaging; TSV packaging.

[0073] Alternatively, the temporary bonding structure is formed in the following manner: First, a temporary bonding adhesive layer is formed, and then the optical fiber is embedded in the temporary bonding adhesive layer; or, First, lay out the optical fiber, then coat the optical fiber with a temporary bonding adhesive layer; or, The temporary bonding structure is formed using a pre-fabricated dry film embedded in optical fibers.

[0074] Optionally, the temporary carrier is removed after debonding, and residual temporary bonding material is removed by a cleaning process to obtain a damage-free packaging structure.

[0075] The following describes the fabrication steps for implementing optical fibers on different types of non-transparent materials, including but not limited to stainless steel temporary carriers and PP core materials in printed circuit boards (PCBs). Two methods for debonding embedded optical fibers are used: adhesive-coated embedded fibers and prefabricated fiber embedded in dry film. In terms of process, there are single-sided and double-sided time-bonding processes. Double-sided time-bonding can achieve symmetrical structures and reduce structural warpage.

[0076] For dual-surface temporary bonding processes, either a sequential dual-surface processing method or a dual-sided support dual-surface processing method can be adopted depending on the specific packaging process. The sequential dual-surface processing method involves removing the first temporary bonding structure after processing the first surface, and then temporarily bonding and processing the other surface. The dual-sided support dual-surface processing method retains the first temporary bonding structure after processing the first surface, and further forms a second temporary bonding structure on the other side of the device structure to be processed, so that the device structure to be processed simultaneously receives temporary support from both sides during at least part of the subsequent processing.

[0077] like Figure 3 As shown, the temporary bonding adhesive dry film (Chip First process) for pre-embedded optical fibers has the following single-sided process steps: Step 1: Temporary carrier board pretreatment, fiber optic cable embedding, and adhesive application: The temporary carrier board is cleaned and dried. A temporary bonding adhesive dry film with pre-embedded optical fibers is pasted onto the surface of the temporary carrier board and then baked to cure.

[0078] Step 2, Temporary Bonding and Reconstruction: The chip, silicon bridge, passive electronic components, etc. are individually aligned and bonded to the front side of the pre-embedded optical fiber temporary bonding adhesive dry film at the wafer level or panel level. They are then bonded by heating and pressure, and finally encapsulated to form a reconstructed "chip / silicon bridge-carrier" composite structure.

[0079] Step 3, RDL and subsequent processing: Relying on the rigid support of the temporary carrier board, the plastic cover of the reconstructed wafer / panel is ground and thinned to expose the chip solder joints; then, based on the alignment marks, processes such as coating, exposure, development, thin film deposition, electroplating, and etching are completed on the chip surface to prepare one or more RDL and pad / ball structures.

[0080] Optionally, in some implementations, flip-chips can continue to be mounted on top of the RDL / pad structure and then encapsulated to achieve 2.5D multi-chip integration.

[0081] Step 4, laser debonding trigger: When a laser is incident from the reserved incident end of an optical fiber, the laser light is transmitted through the laser thermal release layer (LTHC) and energy is released. After absorbing the laser energy, the LTHC undergoes thermal decomposition, and the bonding between the LTHC and the temporary carrier plate fails, achieving low-stress debonding at the interface.

[0082] Step 5, carrier plate separation: The debonded composite structure is vertically separated, the temporary carrier is removed, and the ultra-thin wafer / panel-level composite structure containing the chip with residual adhesive on the front is retained.

[0083] Step Six: Residual Adhesive Cleaning and Finished Product Removal Organic solvents are used to clean and remove residual temporary bonding adhesive from the wafer / panel surface. After rinsing and drying, an ultra-thin wafer / panel composite structure without damage or residue is obtained, completing the entire process of temporary bonding and debonding.

[0084] By setting a temporary bonding structure containing embedded optical fiber between the non-transparent substrate and the device structure, laser energy can be transmitted to the release area without penetrating the non-transparent substrate, realizing reliable laser debonding on the non-transparent substrate and breaking through the limitations of traditional transparent substrates.

[0085] In another implementation, such as Figure 4 As shown, there are three methods for introducing optical fibers into the manufacturing process: placing the optical fiber first and then applying adhesive, applying adhesive first and then placing the optical fiber, and applying adhesive first, placing the optical fiber, and finally applying adhesive.

[0086] Taking double-sided processing as an example, the steps include: Step 1, Temporary carrier board pretreatment: Clean and dry the temporary carrier plate; For wafer-level temporary carriers: First, spin-coat a temporary bonding adhesive heat-release layer, then place the optical fiber on top of the temporary bonding adhesive, including but not limited to spiral, serpentine, and other placement patterns, so that the optical fiber can completely cover the temporary carrier; optionally, spray or slit extrusion coating another layer of temporary bonding adhesive heat-release layer to smooth the surface of the temporary bonding adhesive; optionally, coat another layer of temporary bonding adhesive adhesion layer on top of the heat-release layer to form a temporary bonding adhesive structure with embedded optical fiber.

[0087] For panel-level temporary carriers: place optical fibers on the surface of the temporary carrier in a shape including but not limited to spiral, serpentine, etc., so that the optical fibers can completely cover the temporary carrier; then apply a temporary bonding adhesive heat release layer (including slit extrusion coating, spraying, etc.) so that the temporary bonding adhesive completely covers the embedded optical fibers; optionally, a temporary bonding adhesive adhesion layer can be applied on top of the heat release layer to form a composite structure of "optical fiber-heat release layer-temporary bonding adhesive adhesion layer".

[0088] Step 2, Temporary bonding to the first plastic seal: The chip, silicon bridge, passive electronic components, etc. are individually aligned and bonded to the front side of the wafer-level / panel-level temporary carrier of the embedded optical fiber temporary bonding structure, and then bonded by heating and pressure. Finally, the structure is encapsulated to form a reconstructed "chip / silicon bridge-carrier" composite structure.

[0089] Step 3: Thinning of the plastic film and subsequent processing: Relying on the rigid support of the temporary carrier board, the plastic cover of the reconstructed wafer / panel is ground and thinned to expose the chip solder joints; Optionally, based on the alignment marks, processes such as coating, exposure, development, thin film deposition, electroplating, and etching are completed on the chip surface to prepare one or more RDL and pad / ball structures.

[0090] Step 4, laser debonding trigger: A laser is incident through a fiber optic connector pre-installed on one side of the temporary carrier. The laser energy is concentrated on the laser heat release layer, causing thermal decomposition of the release layer. This leads to the failure of the adhesive layer to bond with the temporary carrier, achieving low-stress debonding at the interface.

[0091] Step 5, Temporary carrier plate separation: The debonded composite structure is vertically separated, the temporary carrier is separated, and the optical fiber is removed along with the temporary bonding material on the side of the temporary carrier, leaving the ultra-thin wafer / panel-level composite structure with chip / silicon bridge on the front with residual adhesive.

[0092] Step Six: Residual Adhesive Cleaning and Removal of Single-Sided Finished Products: Organic solvents are used to clean and remove residual adhesive from the wafer / panel surface. After rinsing and drying, a single-sided wafer / panel-level composite structure containing a chip with the residual adhesive removed is obtained, completing the first temporary bonding and debonding process.

[0093] Step 7, Second fiber optic cable embedding and adhesive application: Using the debonded single-sided chip-containing wafer / panel-level composite structure as a temporary carrier, step one is repeated on the surface of the first embedded optical fiber to achieve the second optical fiber embedding and coating of temporary bonding adhesive. Step 8, Second temporary bonding and second-side molding: Repeat step two; Step 9, Thinning of the second plastic cover and subsequent processing of the second surface: Based on the support of the previous single-sided wafer / panel-level composite structure containing chips, the plastic cover of the reconstructed wafer / panel is ground and thinned to expose the chip's solder joints; Optionally, based on the alignment mark, the second chip surface is coated with adhesive, exposed, developed, thin film deposited, electroplated, etched, etc., to prepare one or more RDL and pad / ball structures, so that the RDL and pad / ball structures formed on the second side are symmetrical with the structure of the first side.

[0094] Step 10, subsequent double-sided manufacturing process: Based on the wafer / panel-level symmetrical structure with double-sided chip / silicon bridge, subsequent processes such as coating, exposure, development, thin film deposition, electroplating, and etching are completed to prepare more RDL structures and pads / solder joints. Optionally, other chips (such as HBM, GPU, CPU, silicon photonics chips, etc.) can be flip-chipped or hybrid-bonded on the two surfaces of the double-sided wafer / panel-level symmetrical structure containing chips / silicon bridges. Step 11 (not shown), second laser debonding trigger: A laser is incident through a fiber optic connector pre-reserved in the center of the symmetrical structure. The laser energy is concentrated on the laser heat release layer, causing thermal decomposition of the release layer. The adhesive layer and the temporary carrier plate fail to bond at the interface, achieving low-stress debonding at the interface.

[0095] Step 12 (not shown), temporary carrier plate separation: The debonded double-sided symmetrical composite structure is vertically separated to obtain two wafer-level / panel-level fan-out or 2.5D integrated products prepared on both sides.

[0096] By forming a temporary fiber bonding structure again after completing one bonding / processing step, a two-sided simultaneous bonding and debonding process is achieved, allowing processing to be performed on both sides of the device, improving packaging integration and reducing the risk of warping during two-sided processing.

[0097] Optionally, optical fibers can be introduced into the manufacturing process, specifically including three schemes: placing the optical fiber first and then applying adhesive (only applicable to panel-level packaging), applying adhesive first and then placing the optical fiber, and applying adhesive first, then placing the optical fiber, and finally applying adhesive.

[0098] Taking double-sided process as an example, such as Figure 5 As shown, the steps include: Step 1, Temporary carrier board pretreatment: Clean and dry the temporary carrier plate; For wafer-level temporary carriers: First, spin-coat a temporary bonding adhesive heat-release layer, then place the optical fiber on top of the temporary bonding adhesive, including but not limited to spiral, serpentine, and other placement patterns, so that the optical fiber can completely cover the temporary carrier; optionally, spray or slit extrusion coating another layer of temporary bonding adhesive heat-release layer to smooth the surface of the temporary bonding adhesive; optionally, coat another layer of temporary bonding adhesive adhesion layer on top of the heat-release layer to form a temporary bonding adhesive structure with embedded optical fiber.

[0099] For panel-level temporary carriers: place optical fibers on the surface of the temporary carrier, with placement shapes including but not limited to spiral, serpentine, etc., so that the optical fibers can completely cover the temporary carrier; then apply a temporary bonding adhesive heat release layer (including slit extrusion coating, spraying, etc.) so that the temporary bonding adhesive completely covers the embedded optical fibers; optionally, an adhesion layer can be applied on top of the heat release layer to form a "optical fiber-heat release layer-adhesion layer" composite structure.

[0100] Step 2, Fabrication of fine-pitch RDL: On the composite structure of "optical fiber-heat release layer-adhesion layer", processes such as coating, exposure, development, thin film deposition, electroplating, and etching are performed to prepare one or more RDL and pad / ball structures.

[0101] Step 3, Flip Chip / Silicon Bridge and Molding: The chip, silicon bridge, passive electronic components, etc. are flip-mounted one by one onto the prepared RDL / pad, and then plastic encapsulation is completed to form a reconstructed "chip / silicon bridge-carrier" composite structure.

[0102] Relying on the rigid support of the temporary carrier, the plastic cover of the reconstructed wafer / panel is ground and thinned. Optionally, based on alignment marks, processes such as coating, exposure, development, thin film deposition, electroplating, and etching are completed on the surface of the TSV chip and silicon bridge to prepare one or more RDL and pad / ball structures on top of the chip / silicon bridge.

[0103] Step 4, laser debonding trigger: A laser is incident through a fiber optic connector pre-installed on one side of the temporary carrier. The laser energy is concentrated on the laser heat release layer, causing thermal decomposition of the release layer. This leads to the failure of the adhesive layer to bond with the temporary carrier, achieving low-stress debonding at the interface.

[0104] Step 5, Temporary carrier plate separation: The debonded composite structure is vertically separated, the optical fiber and temporary carrier are removed, and the ultra-thin wafer / panel-level composite structure with chip / silicon bridge on the front is retained with residual adhesive.

[0105] Step Six: Residual Adhesive Cleaning and Removal of Single-Sided Finished Products: Organic solvents are used to clean and remove residual adhesive from the wafer / panel surface. After rinsing and drying, a single-sided wafer / panel-level composite structure containing a chip is obtained without damage or residual adhesive, completing the first temporary bonding and debonding process.

[0106] Step 7, Second fiber optic cable embedding and adhesive application: Using the debonded single-sided chip-containing wafer / panel-level composite structure as a temporary carrier, step one is repeated on the surface of the first embedded optical fiber to achieve the second optical fiber embedding and coating of temporary bonding adhesive. Step 8, Fabrication of the second fine-pitch RDL: Repeat step two.

[0107] Step 9, Flip Chip / Silicon Bridge and Molding: The chip, silicon bridge, passive electronic components, etc. are flip-mounted one by one onto the newly prepared RDL / pad, and then plastic encapsulation is completed to form a reconstructed "chip / silicon bridge-carrier" composite structure.

[0108] Relying on the rigid support of the double-sided composite structure, the second plastic cover of the reconstructed wafer / panel is ground and thinned; Optionally, based on alignment marks, processes such as coating, exposure, development, thin film deposition, electroplating, and etching are completed on the surface of the TSV chip / silicon bridge to prepare one or more RDL and pad / ball structures on top of the chip / silicon bridge, so that they maintain structural symmetry with the first surface.

[0109] Step 10, subsequent double-sided manufacturing process: Based on the wafer / panel-level symmetrical structure with double-sided chip / silicon bridge, subsequent processes such as coating, exposure, development, thin film deposition, electroplating, and etching are completed to prepare more RDL structures and pads / solder joints. Optionally, other chips (such as HBM, GPU, CPU, silicon photonics chips, etc.) can be flip-chipped or hybrid-bonded on the two surfaces of the double-sided wafer / panel-level symmetrical structure containing chips / silicon bridges. Step 11, Second laser debonding trigger: A laser is incident through a fiber optic connector pre-reserved in the center of the symmetrical structure. The laser energy is concentrated on the laser heat release layer, causing thermal decomposition of the release layer. The adhesive layer and the temporary carrier plate fail to bond at the interface, achieving low-stress debonding at the interface.

[0110] Step 12, Temporary carrier plate separation: The debonded double-sided symmetrical composite structure is vertically separated to obtain two wafer-level / panel-level fan-out or 2.5D integrated products prepared on both sides.

[0111] By applying embedded fiber temporary bonding structures to advanced packaging processes such as RDL First, non-transparent substrates can support the RDL layer and chip structure, while ensuring the feasibility of subsequent laser debonding processes and improving process compatibility.

[0112] Alternatively, in some implementations, such as Figure 6 As shown, the symmetrical surfaces of the double-sided structure remain unbonded, and the operation continues with a temporary carrier plate.

[0113] In another embodiment, after the encapsulation and interconnection processing of the first surface of the device structure to be processed is completed, the first temporary bonding structure between the first temporary carrier and the device structure to be processed can be retained, thus preserving the support of the device structure to be processed by the first temporary carrier. In this state, the device structure to be processed is flipped or its processing direction is adjusted, and a second temporary bonding structure is formed on the opposite side of the device structure to the first temporary carrier, so that the second temporary carrier is temporarily connected to the other side of the device structure to be processed through the second temporary bonding structure. Thus, in at least part of the subsequent processing, the first temporary carrier and the second temporary carrier are located on opposite sides of the device structure to be processed, and together provide bilateral temporary support for the device structure to be processed through the first temporary bonding structure and the second temporary bonding structure.

[0114] Optionally, the first temporary bonding structure and the second temporary bonding structure each include an embedded optical fiber structure, which is used to transmit externally input laser energy to the corresponding release area. By forming temporary supports on opposite sides of the device structure to be processed, warpage caused by differences in the material layer structure or thermomechanical properties on both sides during processes such as molding, thinning, redistribution layer preparation, metallization, electroplating, etching, photolithography, and subsequent chip integration can be reduced.

[0115] After the encapsulation and interconnection processing of the second surface are completed, the first and second temporary carriers can be debonded separately according to the needs of subsequent processes. Alternatively, the temporary bonding structure on one side can be removed first, while the temporary carrier on the other side continues to provide support. During debonding, laser energy is input into the embedded optical fiber in the temporary bonding structure to be removed, so that the laser energy is transmitted to the corresponding release area and causes thermal decomposition, gas release, or interface weakening in the release area, thereby reducing the bonding strength of the corresponding temporary bonding structure and achieving low-stress separation between the corresponding temporary carrier and the structure of the device to be processed.

[0116] Taking RDL first double-sided process as an example, one method includes: Step 1, Temporary carrier board pretreatment: Clean and dry the temporary carrier plate; For wafer-level temporary carriers: First, spin-coat a temporary bonding adhesive heat-release layer, then place the optical fiber on top of the temporary bonding adhesive, including but not limited to spiral, serpentine, and other placement patterns, so that the optical fiber can completely cover the temporary carrier; optionally, spray or slit extrusion coating another layer of temporary bonding adhesive heat-release layer to smooth the surface of the temporary bonding adhesive; optionally, coat another layer of temporary bonding adhesive adhesion layer on top of the heat-release layer to form a temporary bonding adhesive structure with embedded optical fiber.

[0117] For panel-level temporary carriers: place optical fibers on the surface of the temporary carrier, with placement shapes including but not limited to spiral, serpentine, etc., so that the optical fibers can completely cover the temporary carrier; then apply a temporary bonding adhesive heat release layer (including slit extrusion coating, spraying, etc.) so that the temporary bonding adhesive completely covers the embedded optical fibers; optionally, an adhesion layer can be applied on top of the heat release layer to form a "optical fiber-heat release layer-adhesion layer" composite structure.

[0118] Step 2, Fabrication of fine-pitch RDL: On the composite structure of "optical fiber-heat release layer-adhesion layer", processes such as coating, exposure, development, thin film deposition, electroplating, and etching are performed to prepare one or more RDL and pad / ball structures.

[0119] Step 3, Flip Chip / Silicon Bridge and Molding: The chip, silicon bridge, passive electronic components, etc. are flip-mounted one by one onto the newly prepared RDL / pad, and then plastic encapsulation is completed to form a reconstructed "chip / silicon bridge-carrier" composite structure.

[0120] Relying on the rigid support of the temporary carrier, the plastic cover of the reconstructed wafer / panel is ground and thinned. Optionally, based on alignment marks, processes such as coating, exposure, development, thin film deposition, electroplating, and etching are completed on the surface of the TSV chip / silicon bridge to prepare one or more RDL and pad / ball structures on top of the chip / silicon bridge.

[0121] Step 4, Second fiber optic cable embedding and adhesive application: Invert the above "chip / silicon bridge-carrier" composite structure so that the temporary carrier is facing upwards, and repeat step one to achieve the second fiber embedding and coating of temporary bonding adhesive. Step 5, Fabrication of the second fine-pitch RDL: Repeat step two; Step Six, Flip Chip / Silicon Bridge and Molding: The chip, silicon bridge, passive electronic components, etc. are flip-mounted one by one onto the newly prepared RDL / pad, and then plastic encapsulation is completed to form a reconstructed "chip / silicon bridge-carrier" composite structure.

[0122] Relying on the rigid support of the double-sided composite structure, the second plastic cover of the reconstructed wafer / panel is ground and thinned; Optionally, based on alignment marks, processes such as coating, exposure, development, thin film deposition, electroplating, and etching are completed on the surface of the TSV chip / silicon bridge to prepare one or more RDL and pad / ball structures on top of the chip / silicon bridge, so that they maintain structural symmetry with the first surface.

[0123] Step 7, subsequent double-sided manufacturing process: Based on the wafer / panel-level symmetrical structure with double-sided chip / silicon bridge, subsequent processes such as coating, exposure, development, thin film deposition, electroplating, and etching are completed to prepare more RDL structures and pads / solder joints. Optionally, other chips (such as HBM, GPU, CPU, silicon photonics chips, etc.) can be flip-chipped or hybrid-bonded on the two surfaces of the double-sided wafer / panel-level symmetrical structure containing chips / silicon bridges. Step 8, laser debonding trigger: A laser is incident through a fiber optic connector pre-reserved in the center of the symmetrical structure. The laser energy is concentrated on the laser heat release layer, causing thermal decomposition of the release layer. The adhesive layer and the temporary carrier plate fail to bond at the interface, achieving low-stress debonding at the interface.

[0124] Step 9, Temporary carrier plate separation: The debonded double-sided symmetrical composite structure is vertically separated to obtain two wafer-level / panel-level fan-out or 2.5D integrated products prepared on both sides.

[0125] The technical solution of the present invention has now been described in conjunction with the accompanying drawings. However, it will be readily understood by those skilled in the art that the scope of protection of the present invention is obviously not limited to the specific embodiments described above. Without departing from the principles of the present invention, those skilled in the art can make equivalent changes or substitutions to the relevant technical features, and the technical solutions resulting from such changes or substitutions will all fall within the scope of protection of the present invention.

Claims

1. A method for temporary bonding and debonding on a non-transparent substrate, characterized in that, include: A temporary carrier plate is provided, wherein the temporary carrier plate is made of a non-transparent material; A temporary bonding structure is formed on one side of the temporary carrier plate. The temporary bonding structure includes a temporary bonding material and an energy transfer structure disposed inside the temporary bonding material. The structure of the device to be processed is temporarily fixed to the temporary carrier plate by the temporary bonding structure; Based on the support of the temporary carrier board, at least one semiconductor manufacturing process is performed on the device structure to be processed; Laser energy is input into the energy transfer structure, so that the laser energy is transmitted through the energy transfer structure to the release region in the temporary bonding structure; The release region is the area in the temporary bonded structure that responds to the laser energy and reduces the bonding strength. The release region undergoes physical or chemical changes under the action of the laser energy, thereby reducing the adhesive performance of the temporary bonded structure. Separate the temporary carrier board from the structure of the device to be processed to achieve debonding.

2. The method according to claim 1, characterized in that: The energy transmission structure includes at least one optical fiber; The optical fiber includes at least: The input terminal used to receive laser energy; The output end for releasing laser energy; The release end is located close to the release area so that the laser energy can act on the release area.

3. The method according to claim 2, characterized in that: The optical fiber is embedded inside the temporary bonding material, and the input end extends to the outside of the temporary bonding material, so that the optical fiber and the temporary bonding material form an integrated composite structure.

4. The method according to claim 2, characterized in that, The refractive index of the optical fiber satisfies: nair < ​​noptic fiber < ntemporary bonding material; To make: Total internal reflection occurs at the interface between air and optical fiber; Light energy transmission occurs at the interface between the optical fiber and the temporary bonding material.

5. The method according to claim 2, characterized in that: The optical fibers are arranged in at least one of the following ways in the projection area on the temporary carrier: serpentine arrangement; spiral arrangement; grid arrangement; array arrangement.

6. The method according to claim 2, characterized in that: The optical fiber includes a single-layer optical fiber structure or a multi-layer optical fiber structure; In this multi-layer fiber structure, different layers of optical fibers are used to cover different areas of the temporary carrier plate to improve the laser energy coverage range.

7. The method according to claim 1, characterized in that: The temporary bonding structure includes: A laser heat release layer disposed on the temporary carrier plate; A temporary bonding adhesive layer covering the laser heat release layer; The energy transfer structure is disposed inside the temporary bonding adhesive layer or in an adjacent region of the laser heat release layer.

8. The method according to claim 7, characterized in that: The release area is the laser heat release layer; The laser energy acts on the laser heat release layer, causing thermal decomposition, gas release, or interface weakening of the laser heat release layer, thereby reducing the bonding strength of the temporary bonding structure.

9. The method according to claim 1, characterized in that: The non-transparent material includes at least one of the following: metallic materials; silicon materials; glass fiber reinforced materials; polymer materials; printed circuit board materials.

10. The method according to claim 1, characterized in that: The structure of the device to be processed includes: an ultrathin wafer; a reconstructed wafer; a chip; a silicon bridge; and passive electronic components. The semiconductor manufacturing process includes: wafer thinning; molding; RDL layer preparation; metallization; electroplating; etching; and photolithography.

11. The method according to claim 1, characterized in that, The method is applied to at least one of the following packaging processes: wafer-level packaging (WLP); fan-out wafer-level packaging (FOWLP); fan-out board-level packaging (FOPLP); 2.5D packaging; 3D packaging; chiplet heterogeneous integration packaging; and TSV packaging.

12. The method according to claim 2, characterized in that: The temporary bonding structure is formed in the following ways: first, a temporary bonding adhesive layer is formed, and then the optical fiber is embedded in the temporary bonding adhesive layer; or, the optical fiber is arranged first, and then a temporary bonding adhesive layer is coated to cover the optical fiber; or, the temporary bonding structure is formed by using a temporary bonding adhesive dry film pre-embedded with optical fiber.

13. The method according to claim 1, characterized in that: The temporary carrier is removed after debonding, and residual temporary bonding material is removed by a cleaning process.

14. A composite carrier structure for temporary bonding and debonding of non-transparent carrier plates, characterized in that, include: Non-transparent temporary carrier plate; A temporary bonding layer disposed on one side of the non-transparent temporary carrier plate; An energy transfer structure disposed within the temporary bonding layer; The release region is provided in the temporary bonding layer; in: The energy transmission structure is used to receive laser energy and transmit the laser energy to the release area; The release region responds to the laser energy and changes the bonding state between the temporary bonding layer and the non-transparent temporary carrier.

15. The composite carrier plate structure according to claim 14, characterized in that: The energy transmission structure includes optical fiber; The optical fiber extends along the surface of the non-transparent temporary carrier and at least partially overlaps the release area.

16. The composite carrier plate structure according to claim 15, characterized in that: The optical fiber includes multiple branch segments with the input end optically coupled to the input end, and each branch segment is provided with at least one output optical fiber segment; The multiple fiber segments are used to distribute laser energy to multiple release areas.

17. The composite carrier plate structure according to claim 14, characterized in that: The temporary bonding layer includes: Heat release layer; Adhesive layer; The energy transfer structure is located between the heat release layer and the adhesion layer, or embedded inside the heat release layer.

18. The composite carrier plate structure according to claim 14, characterized in that: The non-transparent temporary carrier is a metal carrier, a silicon carrier, or a glass fiber reinforced carrier. The non-transparent temporary carrier can be a wafer-level packaging carrier or a panel-level packaging carrier.

19. A method for biplane simultaneous bonding and debonding, characterized in that, include: Using the method of claim 1, a first temporary bonding structure is formed on a first temporary carrier. Complete chip packaging and interconnect fabrication on the first surface; Release the first temporary bond structure; A second temporary bonding structure is formed on the other side of the already processed structure; Complete the chip packaging and interconnect fabrication on the second surface; Carrier separation is achieved through at least one laser debonding process.

20. The method according to claim 19, characterized in that: The first temporary bonding structure and the second temporary bonding structure each include an embedded optical fiber structure; The first temporary bonding structure and the second temporary bonding structure are used to form a symmetrical double-sided support structure to reduce warping during the packaging process.

Images