Primer coating film-forming composition, laminate, method for manufacturing laminate, and method for manufacturing processed semiconductor substrate or electronic device substrate

Abstract

A laminate, etc., is provided, comprising: a support substrate; a semiconductor substrate or an electronic device substrate; and an adhesive layer disposed between the semiconductor substrate or the electronic device substrate and the support substrate, wherein the peeling interface can be controlled when a semiconductor wafer is peeled from the support substrate. The laminate further comprises: a support substrate; a semiconductor substrate or an electronic device substrate; and an adhesive layer disposed between the semiconductor substrate or the electronic device substrate and the support substrate, wherein a primer film is formed on the surface of any one of the semiconductor substrate, the electronic device substrate, and the support substrate, the primer film being a primer film formed by a primer film forming composition, the primer film forming composition being used to improve the adhesion between the adhesive layer formed by the adhesive composition containing adhesive components cured by a hydrogenation silanization reaction and the substrate, the primer film forming composition containing components that contribute to the hydrogenation silanization reaction.

Description

Technical Field

[0001] This invention relates to a composition for forming a primer film, a laminate, a method for manufacturing the laminate, and a method for manufacturing a processed semiconductor substrate or electronic device substrate. Background Technology

[0002] In contrast to semiconductor wafers traditionally integrated in a two-dimensional planar direction, semiconductor integration technology aims for further integration in a three-dimensional direction (layering). This three-dimensional layering is a technique that integrates multiple layers while simultaneously wiring through silicon vias (TSVs). During multi-layer integration, the side opposite to the circuit surface (i.e., the back side) of each wafer to be integrated is thinned by grinding, and the thinned semiconductor wafers are then layered.

[0003] Before thinning, the semiconductor wafer (hereinafter referred to as the wafer) is bonded to a support for polishing using a polishing apparatus. This bonding must be easily peeled off after polishing; therefore, it is called a temporary bond. This temporary bond must be easily detached from the support because, when large forces are applied during removal, the thinned semiconductor wafer may sometimes be cut or deformed. Easy removal is necessary to prevent this. However, during polishing of the back side of the semiconductor wafer, detachment or displacement due to polishing stress is undesirable. Therefore, the desired performance of the temporary bond is: resistance to the stress during polishing and easy removal after polishing.

[0004] As temporary adhesives for such temporary bonding, adhesives containing polydimethylsiloxane (Patent Document 1) and temporary adhesives containing epoxy-modified polysiloxane (Patent Document 2) have been proposed.

[0005] Existing technical documents Patent documents Patent Document 1: International Publication No. 2017 / 221772 Patent Document 2: International Publication No. 2018 / 216732 Summary of the Invention

[0006] The problem that the invention aims to solve As described above, in the temporary bonding of semiconductor wafers and supports, it is necessary that: during temporary bonding, the adhesive layer formed by the temporary adhesive is not easily peeled off from the support and semiconductor wafer; on the other hand, when the semiconductor wafer is peeled off from the support, the adhesive layer is easily peeled off from the support and semiconductor wafer.

[0007] Furthermore, when peeling a semiconductor wafer from a support, the area to be peeled is sometimes the interface between the semiconductor wafer and the adhesive layer (also known as device peeling (device release)) and sometimes the interface between the support and the adhesive layer (also known as carrier peeling (carrier release)).

[0008] For example, in the case of carrier-based peeling, the adhesive layer remains (adheres) to the device side of the semiconductor wafer. Therefore, compared to device peeling, the cleaning of the adhesive layer after peeling takes longer, which may increase process time and increase the cleaning burden on the device substrate that serves as the semiconductor wafer. Therefore, to avoid the above concerns, device peeling is preferred.

[0009] Thus, from the viewpoint of reducing adhesive layer residue on the device substrate, device peeling is preferred. However, on the other hand, considering the adhesive layer used, the types of substrates it is in contact with, or the setting conditions in the manufacturing process, carrier peeling is sometimes also desired.

[0010] Therefore, it is desirable to be able to control the peeling point (peeling interface) when peeling a semiconductor wafer from the support.

[0011] The present invention was made in view of the above circumstances, and its object is to provide a laminate having: a support substrate; a semiconductor substrate or an electronic device substrate; and an adhesive layer disposed between the semiconductor substrate or the electronic device substrate and the support substrate, wherein the peeling interface can be controlled when the semiconductor wafer is peeled from the support substrate.

[0012] Solution for solving the problem In order to solve the aforementioned technical problem, the inventors conducted in-depth research and discovered that by providing a primer film between the adhesive layer and the substrate, which can improve the adhesion between these adhesive layers and the substrate, the aforementioned technical problem can be solved, and the present invention with the following objectives was completed.

[0013] That is, the present invention includes the following.

[0014] [1] A primer film forming composition for improving the adhesion between an adhesive layer formed from an adhesive composition containing an adhesive component cured by a hydrosilanization reaction and a substrate, the primer film forming composition containing an ingredient that facilitates the hydrosilanization reaction.

[0015] [2] The primer film forming composition according to [1], wherein the primer film forming composition contains any compound selected from platinum-containing compounds, Si-H-based compounds and vinyl-containing compounds as a component that contributes to the hydrosilylation reaction.

[0016] [3] The primer film forming composition according to [1] or [2], wherein the adhesive composition forming the adhesive layer contains the adhesive component and the release agent component.

[0017] [4] The primer film forming composition according to [3], wherein the stripping agent component comprises polyorganosiloxane.

[0018] [5] The composition for forming a primer film according to any one of [1] to [4], wherein the adhesive component cured by the hydrosilylation reaction contains: an alkenyl group having 2 to 40 carbon atoms bonded to silicon atoms (A-1); a Si-H group (A-2); and a platinum group metal catalyst (A-3).

[0019] [6] A laminate comprising: a support substrate; a semiconductor substrate or an electronic device substrate; and an adhesive layer disposed between the semiconductor substrate or the electronic device substrate and the support substrate, wherein a primer film is formed on the surface of any one of the semiconductor substrate, the electronic device substrate and the support substrate, the primer film being a primer film formed from a primer film forming composition as described in any one of [1] to [5].

[0020] [7] The laminate according to [6], wherein the primer film is formed on the surface of the support substrate.

[0021] [8] A method for manufacturing a laminate, wherein the laminate comprises: a support substrate; a semiconductor substrate or an electronic device substrate; an adhesive layer disposed between the semiconductor substrate or the electronic device substrate and the support substrate; and a primer film formed on the surface of any one of the semiconductor substrate, the electronic device substrate and the support substrate, the method comprising: a step of forming a primer film by coating the surface of any one of the semiconductor substrate, the electronic device substrate and the support substrate with a primer film forming composition as described in any one of [1] to [5].

[0022] [9] According to the method for manufacturing a laminate as described in [8], the method for manufacturing a laminate includes: a step of further coating any one of the semiconductor substrate or the electronic device substrate and the support substrate, where the primer film has not been formed, with an adhesive composition for forming the adhesive layer; a step of bonding the substrate with the primer film formed with the substrate coated with the adhesive composition, and then performing a heat treatment, thereby forming an adhesive layer between the semiconductor substrate or the electronic device substrate and the support substrate.

[0023]

[10] The method for manufacturing a laminate according to [9] includes: a step of forming a primer film by coating a primer film forming composition as described in any one of [1] to [5] onto the surface of a support substrate; a step of coating an adhesive composition for forming an adhesive layer onto a semiconductor substrate or an electronic device substrate; a step of bonding the support substrate on which the primer film is formed to the semiconductor substrate or the electronic device substrate on which the adhesive composition is coated, and then performing a heat treatment, thereby forming an adhesive layer between the semiconductor substrate or the electronic device substrate and the support substrate.

[0024]

[11] A method for manufacturing a processed semiconductor substrate or electronic device substrate, comprising: a fifth step of processing the semiconductor substrate or electronic device substrate of the laminate as described in [6] or [7]; and a sixth step of separating the semiconductor substrate or electronic device substrate processed by the fifth step from the support substrate.

[0025] Invention Effects According to the present invention, a laminate is provided having: a support substrate; a semiconductor substrate or an electronic device substrate; and an adhesive layer disposed between the semiconductor substrate or the electronic device substrate and the support substrate, wherein the peeling interface can be controlled when the semiconductor wafer is peeled from the support substrate. Attached Figure Description

[0026] Figure 1 This is a schematic cross-sectional view of an example of a stacked body.

[0027] Figure 2 This is a schematic cross-sectional view of another example of a stacked structure.

[0028] Figure 3A It is used for Figure 1 A schematic cross-sectional view (one of the views) illustrating the manufacturing method of the laminated body shown.

[0029] Figure 3B It is used for Figure 1 A schematic cross-sectional view (second one) illustrating the manufacturing method of the laminate shown.

[0030] Figure 3C It is used for Figure 1 A schematic cross-sectional view (third one) illustrating the manufacturing method of the laminate shown.

[0031] Figure 4A It is used for Figure 2 A schematic cross-sectional view (one of the views) illustrating the manufacturing method of the laminated body shown.

[0032] Figure 4B It is used for Figure 2 A schematic cross-sectional view (second one) illustrating the manufacturing method of the laminate shown.

[0033] Figure 4C It is used for Figure 2 A schematic cross-sectional view (third one) illustrating the manufacturing method of the laminate shown.

[0034] Figure 4D It is used for Figure 2 A schematic cross-sectional view (fourth one) illustrating the manufacturing method of the laminate shown. Detailed Implementation

[0035] (Layered structure) The laminate of the present invention comprises: a support substrate; a semiconductor substrate or an electronic device substrate; and an adhesive layer disposed between the semiconductor substrate or the electronic device substrate and the support substrate, wherein a primer film is formed on the surface of any one of the semiconductor substrate, the electronic device substrate and the support substrate.

[0036] The primer film is formed from the primer film forming composition described below.

[0037] The primer film forming composition is used to improve the adhesion between the adhesive layer formed by the adhesive composition containing adhesive components cured by a hydrosilanization reaction and the substrate, wherein the primer film forming composition contains components that contribute to the hydrosilanization reaction.

[0038] In this invention, by placing a primer layer formed from a primer film forming composition containing components that facilitate the hydrosilylation reaction onto a laminate, the adhesion between the adhesive layer formed from an adhesive composition containing adhesive components that are cured by the hydrosilylation reaction and the substrate can be improved. Therefore, for a laminate having this primer layer, during temporary bonding, the adhesive layer is less likely to peel off from the support substrate, semiconductor substrate, or electronic device substrate; on the other hand, when peeling the semiconductor substrate or electronic device substrate from the support substrate, the adhesive layer can be easily peeled off at the interface between the substrate without the primer film and the adhesive layer.

[0039] In this invention, it is specified that "a primer film is formed on the surface of any substrate in the semiconductor substrate, electronic device substrate, and support substrate". As a specific scheme for forming the primer film, the following schemes can be listed for example.

[0040] (a) A primer film is formed on the surface of the support substrate in a laminate having a semiconductor substrate and a support substrate.

[0041] (b) A primer film is formed on the surface of the support substrate in a laminate having an electronic device substrate and a support substrate.

[0042] (c) A primer film is formed on the surface of a semiconductor substrate in a laminate having a semiconductor substrate and a support substrate.

[0043] (d) A primer film is formed on the surface of the electronic device substrate in a laminate having an electronic device substrate and a support substrate.

[0044] For example, in the case of solution (a) above, the adhesion between the substrate with the primer film and the adhesive layer is improved through the primer film. Therefore, when it is desired to peel the semiconductor substrate from the support substrate, peeling will occur at the interface between the substrate without the primer film and the adhesive layer. That is to say, in the case of solution (a) above, peeling (device peeling) occurs at the interface between the semiconductor substrate and the adhesive layer.

[0045] Similarly, in the above scheme (b), delamination (device delamination) also occurs at the interface between the electronic device substrate and the adhesive layer.

[0046] On the other hand, in the above-mentioned scheme (c) and scheme (d), peeling occurs at the interface between the support substrate and the adhesive layer (carrier peeling).

[0047] Thus, by placing the primer film on any substrate in the laminate, the peeling interface can be controlled.

[0048] As long as the present invention can achieve the purpose of controlling the peeling interface, the solution of the laminate can be either device peeling or carrier peeling.

[0049] In this invention, the substrate for which the primer film is disposed can be appropriately selected by taking into account the type of adhesive layer used, the type of substrates to which it is attached, or the setting conditions in the manufacturing process.

[0050] The following example illustrates the case of device peeling when a primer film is formed on the surface of a support substrate.

[0051] The laminate of the present invention is used for temporary bonding when processing semiconductor substrates or electronic device substrates, and can be appropriately used for thinning and other processing of semiconductor substrates or electronic device substrates (hereinafter, "semiconductor substrates or electronic device substrates" are also collectively referred to as "semiconductor substrates, etc.").

[0052] During the thinning or other processing of a semiconductor substrate, the semiconductor substrate is supported by a support substrate. On the other hand, after the processing of the semiconductor substrate, the semiconductor substrate is separated from the support substrate.

[0053] After the semiconductor substrate or the like is separated from the support substrate, the residue remaining in the adhesive layer of the semiconductor substrate, electronic device substrate or support substrate can be removed, for example, by a cleaning agent composition used to clean the semiconductor substrate or the like.

[0054] As a more preferred configuration of the laminate of the present invention, a laminate may be provided, comprising: a support substrate; a primer film formed on the surface of the support substrate; a semiconductor substrate or an electronic device substrate; and an adhesive layer disposed between the semiconductor substrate or the electronic device substrate and the support substrate having the primer film on its surface.

[0055] This laminate is a device stripping type laminate.

[0056] The following describes the constituent elements of the laminate.

[0057] <Adhesive layer> An adhesive layer is disposed between a support substrate and a semiconductor substrate or an electronic device substrate (such as a semiconductor substrate).

[0058] The adhesive layer is bonded, for example, to a semiconductor substrate. Alternatively, the adhesive layer may be bonded, for example, to a support substrate on which a primer film has been formed.

[0059] The adhesive layer is formed from the adhesive composition.

[0060] The thickness of the adhesive layer in the laminate of the present invention is not particularly limited, and is generally 5 to 500 μm. From the viewpoint of maintaining film strength, it is preferably 10 μm or more, more preferably 20 μm or more, and even more preferably 30 μm or more. From the viewpoint of avoiding non-uniformity of the thick film, it is preferably 200 μm or less, more preferably 150 μm or less, even more preferably 120 μm or less, and even more preferably 100 μm or less.

[0061] The method for forming an adhesive layer from an adhesive composition is described in detail in the section on the method for manufacturing a laminate.

[0062] <<Adhesive Composition>> The adhesive composition of the present invention contains an adhesive component that is cured by a hydrogenation silanization reaction.

[0063] The adhesive composition of the present invention preferably contains an adhesive component and a release agent component.

[0064] The adhesive composition of the present invention may also contain other ingredients.

[0065] As a stripping agent component, polyorganosiloxane is preferred.

[0066] The stripping agent composition preferably contains two or more stripping agent components.

[0067] <<<Adhesive Composition>>> As an adhesive component, it is a component that cures through a hydrosilylation reaction.

[0068] There are no particular limitations on the components that are cured by the hydrogen silanization reaction, but it is preferred to contain: a component having an alkenyl group having 2 to 40 carbon atoms bonded to silicon atoms (hereinafter sometimes referred to as "component (A-1)"); a component having a Si-H group (hereinafter sometimes referred to as "component (A-2)"); and a platinum group metal catalyst (A-3).

[0069] <<<<Ingredients (A-1) and Ingredients (A-2)>>>> The adhesive composition preferably contains component (A-1).

[0070] The adhesive composition preferably contains component (A-2).

[0071] Hereinafter, the combination of component (A-1), component (A-2) and platinum group metal catalyst (A-3) is sometimes referred to as "component (A) that will solidify" or "component (A)".

[0072] From the viewpoint of obtaining the appropriate effects of the present invention, component (A-1) preferably contains: a polyorganosiloxane (a1) having an alkenyl group having 2 to 40 carbon atoms bonded to silicon atoms.

[0073] From the viewpoint of obtaining the appropriate effects of the present invention, component (A-2) preferably contains: a polyorganosiloxane having Si-H groups (a2).

[0074] In this process, alkenyl groups with 2 to 40 carbon atoms are optionally substituted. Examples of substituents include halogen atoms, nitro groups, cyano groups, amino groups, hydroxyl groups, carboxyl groups, aryl groups, and heteroaryl groups.

[0075] In another preferred embodiment, the adhesive composition cured by a hydrosilylation reaction comprises a polysiloxane (A1) and a platinum group metal catalyst (A-3), wherein the polysiloxane (A1) comprises siloxane units (Q units) selected from SiO2, R... 1 R 2 R 3 SiO 1 / 2 The siloxane unit (M unit) and R shown are shown. 4 R 5 SiO 2 / 2 The siloxane unit (D unit) and R shown are shown. 6 SiO 3 / 2 The polysiloxane (A1) comprises one or more units from the group consisting of the shown siloxane units (T units), and the polysiloxane (A1) includes polyorganosiloxane (a1') and polyorganosiloxane (a2'), wherein the polyorganosiloxane (a1') comprises siloxane units (Q' units) selected from SiO2, R 1 'R 2 'R3 'SiO 1 / 2 The siloxane unit (M' unit) and R shown are shown. 4 'R 5 'SiO 2 / 2 The siloxane unit (D' unit) and R shown are shown. 6 'SiO 3 / 2 The polyorganosiloxane (a2') comprises one or more units selected from the group consisting of siloxane units (T' units) shown, and includes at least one unit selected from the group consisting of M' units, D' units, and T' units. 1 R 2 R 3 "SiO" 1 / 2 The siloxane unit (M” unit) and R shown 4 R 5 "SiO" 2 / 2 The siloxane unit (D” unit) and R shown are shown. 6 "SiO" 3 / 2 The siloxane unit (T” unit) shown is one or more units from the group consisting of the siloxane unit (T” unit), and includes at least one unit selected from the group consisting of the M” unit, the D” unit and the T” unit.

[0076] It should be noted that (a1') is an example of (a1), and (a2') is an example of (a2).

[0077] R 1 ~R 6 The groups or atoms bonded to silicon atoms are each independently represented by an optionally substituted alkyl group, an optionally substituted alkenyl group, or a hydrogen atom. Examples of substituents include halogen atoms, nitro groups, cyano groups, amino groups, hydroxyl groups, carboxyl groups, aryl groups, heteroaryl groups, etc.

[0078] R 1 '~R 6 'A group bonded to a silicon atom, each independently representing an optionally substituted alkyl or optionally substituted alkenyl group, R 1 '~R 6 At least one of the groups is an alkenyl group that is optionally substituted. Examples of substituents include halogen atoms, nitro groups, cyano groups, amino groups, hydroxyl groups, carboxyl groups, aryl groups, heteroaryl groups, etc.

[0079] R 1 "~R 6 "R represents a group or atom bonded to a silicon atom, each independently representing an optionally substituted alkyl or hydrogen atom." 1 "~R 6At least one of the elements is a hydrogen atom. Examples of substituents include: halogen atoms, nitro groups, cyano groups, amino groups, hydroxyl groups, carboxyl groups, aryl groups, heteroaryl groups, etc.

[0080] The alkyl group can be any type of straight-chain, branched, or cyclic, with straight-chain or branched alkyl groups being preferred. The number of carbon atoms is not particularly limited, but is usually 1 to 40, preferably 30 or less, more preferably 20 or less, and even more preferably 10 or less.

[0081] Specific examples of linear or branched alkyl groups that may be optionally substituted include: methyl, ethyl, n-propyl, isopropyl, n-butyl, isobutyl, sec-butyl, tert-butyl, n-pentyl, 1-methyl n-butyl, 2-methyl n-butyl, 3-methyl n-butyl, 1,1-dimethyl n-propyl, 1,2-dimethyl n-propyl, 2,2-dimethyl n-propyl, 1-ethyl n-propyl, n-hexyl, 1-methyl n-pentyl, 2-methyl n-pentyl, 3-methyl n-pentyl, 4-methyl n-pentyl, 1,1 The carbon atoms are typically 1 to 14, preferably 1 to 10, and more preferably 1 to 6. Methyl groups are particularly preferred.

[0082] Specific examples of optionally substituted cyclic alkyl groups include: cyclopropyl, cyclobutyl, 1-methyl-cyclopropyl, 2-methyl-cyclopropyl, cyclopentyl, 1-methyl-cyclobutyl, 2-methyl-cyclobutyl, 3-methyl-cyclobutyl, 1,2-dimethyl-cyclopropyl, 2,3-dimethyl-cyclopropyl, 1-ethyl-cyclopropyl, 2-ethyl-cyclopropyl, cyclohexyl, 1-methyl-cyclopentyl, 2-methyl-cyclopentyl, 3-methyl-cyclopentyl, 1-ethyl-cyclobutyl, 2-ethyl-cyclobutyl, 3-ethyl-cyclobutyl, 1,2-dimethyl-cyclobutyl, 1,3-dimethyl-cyclobutyl, 2,2-dimethyl-cyclobutyl, 2,3-dimethyl-cyclobutyl, 2,4-dimethyl-cyclobutyl - Cyclobutyl, 3,3-dimethyl-cyclobutyl, 1-n-propyl-cyclopropyl, 2-n-propyl-cyclopropyl, 1-isopropyl-cyclopropyl, 2-isopropyl-cyclopropyl, 1,2,2-trimethyl-cyclopropyl, 1,2,3-trimethyl-cyclopropyl, 2,2,3-trimethyl-cyclopropyl, 1-ethyl-2-methyl-cyclopropyl, 2-ethyl-1-methyl-cyclopropyl, 2-ethyl-2-methyl-cyclopropyl, 2-ethyl-3-methyl-cyclopropyl and other cycloalkyl groups; dicyclobutyl, dicyclopentyl, dicyclohexyl, dicycloheptyl, dicyclooctyl, dicyclononyl, dicyclodecyl and other dicycloalkyl groups, but not limited to these, and the number of carbon atoms is usually 3 to 14, preferably 4 to 10, and more preferably 5 to 6.

[0083] The alkenyl group can be any type of linear or branched chain, and its number of carbon atoms is not particularly limited, usually 2 to 40, preferably 30 or less, more preferably 20 or less, and even more preferably 10 or less.

[0084] Specific examples of linear or branched alkenyl groups that may be optionally substituted include vinyl, allyl, butenyl, pentenyl, etc., but are not limited thereto. The number of carbon atoms is usually 2 to 14, preferably 2 to 10, and more preferably 1 to 6. Among these, vinyl and 2-propenyl are particularly preferred.

[0085] Specific examples of cyclic alkenyl groups that may be optionally substituted include cyclopentenyl, cyclohexenyl, etc., but are not limited thereto. The number of carbon atoms is usually 4 to 14, preferably 5 to 10, and more preferably 5 to 6.

[0086] As described above, the polysiloxane (A1) comprises polyorganosiloxane (a1') and polyorganosiloxane (a2'). The alkenyl group contained in the polyorganosiloxane (a1') and the hydrogen atoms (Si-H groups) contained in the polyorganosiloxane (a2') form a cross-linked structure and are cured through a hydrosilylation reaction using a platinum group metal catalyst (A-3). The result is the formation of a cured film.

[0087] The polyorganosiloxane (a1') comprises one or more units selected from the group consisting of Q' units, M' units, D' units, and T' units, and includes at least one unit selected from the group consisting of M' units, D' units, and T' units. Two or more polyorganosiloxanes satisfying these conditions may also be used in combination as the polyorganosiloxane (a1').

[0088] Examples of preferred combinations of two or more selected from the group consisting of Q' unit, M' unit, D' unit and T' unit include: (Q' unit and M' unit), (D' unit and M' unit), (T' unit and M' unit), (Q' unit, T' unit and M' unit), but are not limited to these.

[0089] Furthermore, when the polyorganosiloxane (a1') contains two or more polyorganosiloxanes, combinations of (Q' unit and M' unit) and (D' unit and M' unit), combinations of (T' unit and M' unit) and (D' unit and M' unit), and combinations of (Q' unit, T' unit and M' unit) and (T' unit and M' unit) are preferred, but not limited thereto.

[0090] The polyorganosiloxane (a2') comprises one or more units selected from the group consisting of Q" units, M" units, D" units, and T" units, and comprises at least one unit selected from the group consisting of M" units, D" units, and T" units. As a polyorganosiloxane (a2'), two or more polyorganosiloxanes satisfying such conditions may also be used in combination.

[0091] Examples of preferred combinations of two or more selected from the group consisting of Q” units, M” units, D” units and T” units include: (M” units and D” units), (Q” units and M” units), (Q” units, T” units and M” units), but are not limited to these.

[0092] Polyorganosiloxanes (a1') are composed of siloxane units formed by the bonding of silicon atoms with alkyl and / or alkenyl groups, R 1 '~R 6 The proportion of alkenyl groups in all the substituents shown is preferably 0.1 to 50.0 mol%, more preferably 0.5 to 30.0 mol%, with the remainder being R. 1 '~R 6 'It can be set as an alkyl group.'

[0093] Polyorganosiloxanes (a2') are composed of siloxane units formed by the bonding of silicon atoms with alkyl and / or hydrogen atoms, R 1 "~R 6The proportion of all substituents and hydrogen atoms in the substituted atoms shown is preferably 0.1 to 50.0 mol%, more preferably 10.0 to 40.0 mol%, with the remainder being R. 1 "~R 6 "It can be set as an alkyl group."

[0094] In the case where the adhesive composition comprises (a1) and (a2), in a preferred embodiment of the invention, the molar ratio of the alkenyl group contained in the polyorganosiloxane (a1) to the hydrogen atoms constituting the Si-H bond contained in the polyorganosiloxane (a2) is in the range of 1.0:0.5 to 1.0:0.66.

[0095] The weight-average molecular weight of polysiloxanes such as polyorganosiloxane (a1) and polyorganosiloxane (a2) is not particularly limited, and is usually 500 to 1,000,000. From the viewpoint of achieving the effect of the present invention with good reproducibility, it is preferably 5,000 to 50,000.

[0096] It should be noted that, in this invention, the weight-average molecular weight, number-average molecular weight, and dispersity of the polyorganosiloxane can be determined, for example, using a GPC apparatus (TOSOH Corporation EcoSEC, HLC-8320GPC) and a GPC column (TOSOH Corporation TSKgel SuperMultipore HZ-N, TSKgel SuperMultipore HZ-H), with the column temperature set to 40°C, tetrahydrofuran used as the eluent (dissolution solvent), the flow rate set to 0.35 mL / min, and polystyrene (Showa Denko Corporation, Shodex) used as the standard sample.

[0097] The viscosities of polyorganosiloxane (a1) and polyorganosiloxane (a2) are not particularly limited, and are typically 10 to 1,000,000 mPa·s, respectively. From the viewpoint of achieving the effects of the present invention with good reproducibility, 50 to 10,000 mPa·s is preferred. It should be noted that the viscosities of polyorganosiloxane (a1) and polyorganosiloxane (a2) are values ​​measured using an E-type rotational viscometer at 25°C.

[0098] Polyorganosiloxane (a1) and polyorganosiloxane (a2) react with each other via a hydrosilylation reaction. Therefore, their curing mechanism is different from that via silanol groups, and thus, any siloxane does not need to contain silanol groups, such as alkoxy groups, which are formed by hydrolysis to form silanol groups.

[0099] <<<<Platinum Group Metal Catalysts (A-3)>>>> Platinum group metal catalysts are metal catalysts based on the platinum group.

[0100] Such platinum-based metal catalysts are used to promote the hydrosilylation reaction of alkenes and Si-H groups.

[0101] As a specific example of a platinum-based metal catalyst, a substance known as a platinum-based compound (platinum or a compound containing platinum) can be used.

[0102] Specific examples include: platinum fine powder, platinum black, chloroplatinic acid, alcohol-modified chloroplatinic acid, complexes of chloroplatinic acid with dienes, platinum-olefin complexes, platinum-carbonyl complexes (such as bis(acetoacetic acid)platinum and bis(acetylacetone)platinum), chloroplatinic acid-alkenylsiloxane complexes (such as chloroplatinic acid-divinyltetramethyldisiloxane complex and chloroplatinic acid-tetravinyltetramethylcyclotetrasiloxane complex), platinum-alkenylsiloxane complexes (such as platinum-divinyltetramethyldisiloxane complex and platinum-tetravinyltetramethylcyclotetrasiloxane complex), and complexes of chloroplatinic acid with alkynyl alcohols. Among these, platinum-alkenylsiloxane complexes are particularly preferred due to their high promoting effect on the hydrosilylation reaction.

[0103] These hydrogen silanization reactions can use a single catalyst or a combination of two or more catalysts.

[0104] The alkenylsiloxane used in platinum-alkenylsiloxane complexes is not particularly limited, and examples include: 1,3-divinyl-1,1,3,3-tetramethyldisiloxane, 1,3,5,7-tetramethyl-1,3,5,7-tetravinylcyclotetrasiloxane, alkenylsiloxane oligomers formed by substituting a portion of the methyl group of these alkenylsiloxanes with ethyl, phenyl, or the like, and alkenylsiloxane oligomers formed by substituting the vinyl group of these alkenylsiloxanes with allyl, hexenyl, or the like. In particular, 1,3-divinyl-1,1,3,3-tetramethyldisiloxane is preferred from the viewpoint of good stability of the resulting platinum-alkenylsiloxane complex.

[0105] The content of the platinum group metal catalyst (A-3) in the adhesive composition is not particularly limited, for example, it is in the range of 0.1 to 50.0 ppm relative to the total mass of components (A-1) and (A-2).

[0106] <<<<Polymer Inhibitors>>> To inhibit the hydrosilylation reaction, the adhesive component may also contain polymerization inhibitors.

[0107] There are no particular limitations on polymerization inhibitors as long as they can inhibit the hydrosilylation reaction. Specific examples include 1-ethynyl-1-cyclohexanol, 1,1-diphenyl-2-propynyl-1-ol, and other alkynyl alcohols.

[0108] There is no particular limitation on the amount of polymerization inhibitor, but it is generally considered to be above 1000.0 ppm from the point of view of obtaining its effect, and below 10000.0 ppm from the point of view of preventing excessive inhibition of the hydrosilylation reaction, relative to the total amount of polyorganosiloxane (a1) and polyorganosiloxane (a2).

[0109] <<<Removing Agent Ingredients>>> There are no particular limitations on the components of the stripping agent, but from the viewpoint of obtaining the effects of the present invention more appropriately, polyorganosiloxanes are preferred.

[0110] Polysiloxanes used as release agents typically do not react with adhesive components.

[0111] For example, the polyorganosiloxane used as a stripping agent is a component that does not undergo hydrogenation silanization.

[0112] As a polyorganosiloxane, there is no particular limitation. Examples include: polydimethylsiloxane, epoxy-containing polyorganosiloxane, phenyl-containing polyorganosiloxane, methanol-modified polyorganosiloxane, etc.

[0113] From the viewpoint of obtaining the effects of the present invention more appropriately, the two or more stripping agent components preferably include two or more polyorganosiloxanes.

[0114] Two or more polyorganosiloxanes refer to combinations such as polydimethylsiloxane and epoxy-containing polyorganosiloxanes, polydimethylsiloxane and phenyl-containing polyorganosiloxanes, phenyl-containing polyorganosiloxanes and epoxy-containing polyorganosiloxanes, etc., and do not refer to combinations of two epoxy-containing polyorganosiloxanes with different molecular weights, viscosities, or types of epoxy groups.

[0115] As two of two or more stripping agent components, the following combinations can be listed as examples.

[0116] • A combination of polydimethylsiloxane and epoxy-containing polyorganosiloxane.

[0117] • A combination of polydimethylsiloxane and phenyl-containing polyorganosiloxane.

[0118] • A combination of polydimethylsiloxane and methanol-modified polyorganosiloxane.

[0119] • A combination of epoxy-containing polyorganosiloxanes and phenyl-containing polyorganosiloxanes.

[0120] • A combination of epoxy-containing polyorganosiloxanes and methanol-modified polyorganosiloxanes.

[0121] • A combination of phenyl-containing polyorganosiloxanes and methanol-modified polyorganosiloxanes.

[0122] Of these combinations, the combination of polydimethylsiloxane and epoxy-containing polyorganosiloxane is preferred as it is most likely to achieve the effects of the present invention.

[0123] <<<<Polydimethylsiloxane>>>> There are no particular restrictions on the polydimethylsiloxane contained in the adhesive composition.

[0124] Polydimethylsiloxane is a component that does not undergo hydrogenation silanization.

[0125] The "polydimethylsiloxane" in this invention is different from epoxy-containing polydimethylsiloxane, phenyl-containing polydimethylsiloxane, etc. It is an unmodified polyorganosiloxane with methyl as an organic group bonded to silicon atoms.

[0126] As a specific example of polydimethylsiloxane, polydimethylsiloxanes represented by formula (M1) can be listed, but are not limited thereto. (n4 represents the number of repeating units, which is a positive integer.) While the weight-average molecular weight of the polydimethylsiloxane is not particularly limited, it is typically between 100,000 and 2,000,000. From the viewpoint of achieving the effects of the present invention with good reproducibility, it is preferably between 200,000 and 1,200,000, and more preferably between 300,000 and 900,000. Furthermore, while its dispersity is not particularly limited, it is typically between 1.0 and 10.0. From the viewpoint of achieving proper peeling with good reproducibility, it is preferably between 1.5 and 5.0, and more preferably between 2.0 and 3.0. It should be noted that the weight-average molecular weight and dispersity can be determined by the methods described above related to the polyorganosiloxane as an adhesive component.

[0127] The viscosity of polydimethylsiloxane is not particularly limited, and is typically 1,000 to 2,000,000 mm. 2 / s. It should be noted that the viscosity of polydimethylsiloxane is expressed as kinematic viscosity, denoted as centistokes (cSt) = mm. 2 / s. Alternatively, viscosity (mPa·s) can be divided by density (g / cm³). 3 The value can be determined from the viscosity and density measured at 25°C using a type E rotational viscometer, and can be calculated from the kinematic viscosity (mm). 2 / s) = viscosity (mPa·s) / density (g / cm³) 3 This formula is used to calculate the result.

[0128] <<<<Epoxy-containing polyorganosiloxanes>>>> There are no particular restrictions on the epoxy-containing polyorganosiloxanes contained in the adhesive composition.

[0129] Polyorganosiloxanes containing epoxy groups are components that do not undergo hydrogenation and silylation reactions.

[0130] As epoxy-containing polyorganosiloxanes, examples include those containing R 11 R 12 SiO 2 / 2 The siloxane unit shown (D) 10 Polyorganosiloxane (unit).

[0131] R 11 The group that bonds to silicon atoms represents an alkyl group, R. 12 The group that bonds to silicon atoms represents an epoxy group or an organic group containing an epoxy group. Specific examples of alkyl groups can be listed above.

[0132] The epoxy group in an organic group containing an epoxy group can be an independent epoxy group that does not condense with other rings, or it can be an epoxy group that forms a condensation ring with other rings, such as 1,2-epoxycyclohexyl.

[0133] Specific examples of organic groups containing epoxy groups include 3-epoxypropoxypropyl and 2-(3,4-epoxycyclohexyl)ethyl, but are not limited to these.

[0134] In this invention, as a preferred example of an epoxy-containing polyorganosiloxane, an epoxy-containing polydimethylsiloxane can be listed, but is not limited thereto.

[0135] Epoxy-containing polyorganosiloxanes contain the aforementioned siloxane units (D 10 (unit), but except for containing D 10 In addition to the unit, it may also include Q units, M units and / or T units.

[0136] In a preferred embodiment of the present invention, specific examples of epoxy-containing polyorganosiloxanes include: those consisting only of D 10 Polyorganosiloxanes composed of units; containing D 10 Polyorganosiloxanes containing D and Q units; 10 Polyorganosiloxanes containing D and M units; 10 Polyorganosiloxanes containing D and T units; 10 Polyorganosiloxanes containing D, Q, and M units; 10 Polyorganosiloxanes containing D, M, and T units; 10 Polyorganosiloxanes with units such as Q-unit, M-unit, and T-unit.

[0137] The epoxy-containing polyorganosiloxane is preferably a polydimethylsiloxane with an epoxy value of 0.1 to 5. Furthermore, while its weight-average molecular weight is not particularly limited, it is typically 1,500 to 500,000, and preferably 100,000 or less from the viewpoint of suppressing precipitation in the composition.

[0138] Specific examples of epoxy-containing polyorganosiloxanes include, but are not limited to, the polyorganosiloxanes represented by formulas (E1) to (E3). (m1 and n1 represent the number of each repeating unit, which are positive integers.) (m2 and n2 represent the number of repeating units, which are positive integers, and R is an alkylene group with 1 to 10 carbon atoms that are optionally interrupted by oxygen atoms and unsaturated bonds (e.g., carbon-carbon double bonds, carbon-carbon triple bonds, -N=N-).) (m3, n3, and o3 represent the number of repeating units, which are positive integers. R is an alkylene group with 1 to 10 carbon atoms that are optionally interrupted by oxygen atoms and unsaturated bonds (e.g., carbon-carbon double bonds, carbon-carbon triple bonds, -N=N-).) In the above general formula, when m1, m2, m3 and o3 are 2 or more, their repeating units can be arranged adjacently to form blocks or arranged randomly.

[0139] It should be noted that the polyorganosiloxane shown in formula (E3) has an epoxy group and a phenyl group, therefore it is both an epoxy-containing polyorganosiloxane and a phenyl-containing polyorganosiloxane. It should also be noted that epoxy-containing polyorganosiloxanes may or may not have a phenyl group.

[0140] While the weight-average molecular weight of the epoxy-containing polyorganosiloxane is not particularly limited, it is typically 100,000 to 2,000,000. From the viewpoint of achieving the effects of the present invention with good reproducibility, it is preferably 200,000 to 1,200,000, and more preferably 300,000 to 900,000. Furthermore, while its dispersity is not particularly limited, it is typically 1.0 to 10.0. From the viewpoint of achieving proper peeling with good reproducibility, it is preferably 1.5 to 5.0, and more preferably 2.0 to 3.0. It should be noted that the weight-average molecular weight and dispersity can be determined by the methods described above related to the polyorganosiloxane as an adhesive component.

[0141] The viscosity of epoxy-containing polyorganosiloxanes is not particularly limited, and is typically 1,000 to 2,000,000 mm. 2 / s. It should be noted that the viscosity of epoxy-containing polyorganosiloxanes is expressed as kinematic viscosity, denoted as centistokes (cSt) = mm. 2 / s. Alternatively, viscosity (mPa·s) can be divided by density (g / cm³). 3 The value can be determined from the viscosity and density measured at 25°C using a type E rotational viscometer, and can be calculated from the kinematic viscosity (mm). 2 / s) = viscosity (mPa·s) / density (g / cm³) 3 This formula is used to calculate the result.

[0142] <<<<Phenyl-containing polyorganosiloxanes>>>> As phenyl-containing polyorganosiloxanes, examples include those containing R 31 R 32 SiO 2 / 2 The siloxane unit shown (D) 30 Polyorganosiloxane (unit).

[0143] R 31 The group that bonds to silicon atoms represents a phenyl or alkyl group, R. 32 The group that bonds to silicon atoms is represented by phenyl. Specific examples of alkyl groups can be listed above, with methyl being preferred.

[0144] Phenyl-containing polyorganosiloxanes contain the aforementioned siloxane units (D 30 (unit), but except for containing D 30 In addition to the unit, it may also include Q units, M units and / or T units.

[0145] In preferred embodiments, specific examples of phenyl-containing polyorganosiloxanes include: those consisting only of D 30 Polyorganosiloxanes composed of units; containing D 30 Polyorganosiloxanes containing D and Q units; 30 Polyorganosiloxanes containing D and M units; 30 Polyorganosiloxanes containing D and T units; 30 Polyorganosiloxanes containing D, Q, and M units; 30 Polyorganosiloxanes containing D, M, and T units; 30 Polyorganosiloxanes with units of Q, M, and T.

[0146] Specific examples of phenyl-containing polyorganosiloxanes include, but are not limited to, polyorganosiloxanes represented by formula (P1) or (P2). (m5 and n5 represent the number of each repeating unit, which are positive integers.) (m6 and n6 represent the number of each repeating unit, which are positive integers.) In the above general formula, when m5 and m6 are 2 or more, their repeating units can be arranged adjacently to form a block, or they can be arranged randomly.

[0147] <<<<Methanol-Modified Polyorganosiloxane>>>> There are no particular restrictions as it is a methanol-modified polyorganosiloxane.

[0148] Methanol-modified polyorganosiloxanes are polyorganosiloxanes with hydroxyl groups that are directly bonded to carbon atoms. Therefore, the methanol in "methanol-modified polyorganosiloxanes" is not limited to methanol in the narrow sense, but also includes methanol derivatives.

[0149] Methanol-modified polyorganosiloxanes, for example, methanol-modified polydimethylsiloxane.

[0150] The number of hydroxyl groups that are directly bonded to carbon atoms in methanol-modified polyorganosiloxanes is not particularly limited; it can be one or more.

[0151] Methanol-modified polyorganosiloxanes can have hydroxyl groups directly bonded to carbon atoms in their side chains, or hydroxyl groups directly bonded to carbon atoms in one end, or hydroxyl groups directly bonded to carbon atoms in both ends.

[0152] Methanol-modified polyorganosiloxanes preferably have hydroxyl groups on their side chains that are directly bonded to carbon atoms. In this case, even with a low content of methanol-modified polyorganosiloxane, good peelability can be imparted to the adhesive layer formed from the adhesive composition.

[0153] Methanol-modified polyorganosiloxanes, for example, have groups represented by the following formula (Cg) as groups that are directly bonded to silicon atoms. (In formula (Cg), R 1 This indicates a group with one or more carbon atoms. * indicates a bond bonded to a silicon atom. In formula (Cg), the hydroxyl group is directly bonded to a carbon atom. The number of hydroxyl groups directly bonded to carbon atoms in the group represented by formula (Cg) can be one or more. For example, two, three, four, etc., can be listed.

[0154] As R 1 The number of carbon atoms is not particularly limited; for example, it can be 1 to 30, 1 to 20, or 1 to 10.

[0155] As a group represented by formula (Cg), for example, groups represented by formulas (Cg-1) to (Cg-4) can be listed below. (In formula (Cg-1), R 11 It indicates an alkylene group having 1 to 6 carbon atoms that is optionally substituted with an alkoxy group having 1 to 3 carbon atoms.

[0156] In formula (Cg-2), R 12 R represents an alkylene group having 1 to 6 carbon atoms. 13 It refers to an alkylene group having 1 to 6 carbon atoms that is optionally substituted with an alkoxy or hydroxyl group having 1 to 3 carbon atoms.

[0157] In formula (Cg-3), R 14 R represents an alkylene group having 1 to 6 carbon atoms. 15 This indicates an alkylene group with 1 to 3 carbon atoms. m represents an integer from 1 to 10.

[0158] In formula (Cg-4), R 16 ~R 18 Each can be used independently to represent an alkylene group having 1 to 6 carbon atoms.

[0159] In formulas (Cg-1) to (Cg-4), * represents a bond bonded to a silicon atom. R 11 ~R 18 The alkylene groups can be linear, branched, or cyclic.

[0160] As a group represented by formula (Cg), the following groups can be listed as examples. (In the formula, m1 represents an integer from 2 to 10. * represents a bond bonded to a silicon atom.) Methanol-modified polyorganosiloxanes are represented, for example, by the following formula (CPS-1) or formula (CPS-2). (In formula (CPS-1), R) 51 Each can be represented independently as a hydrocarbon group. X 1 The group represented by the above formula (Cg) is indicated. n1 represents an integer greater than or equal to 0. n2 represents an integer greater than or equal to 1.

[0161] In formula (CPS-2), R 52 Each can be represented independently as a hydrocarbon group. X 2 X represents the group shown in the above formula (Cg). 3This represents a hydrocarbon group or a group represented by the above formula (Cg). n3 represents an integer greater than or equal to 0. As R 51 R 52 and X 3 The hydrocarbon group in the form of the alkyl group can be exemplified by alkyl groups having 1 to 8 carbon atoms. Methyl groups are preferred as alkyl groups having 1 to 8 carbon atoms. That is, methanol-modified polyorganosiloxanes are preferably polydimethylsiloxanes represented by the following formula (CPS-1a) or formula (CPS-2a). (In formula (CPS-1a), X) 1 The group represented by the above formula (Cg) is indicated. n1 represents an integer greater than or equal to 0. n2 represents an integer greater than or equal to 1.

[0162] In formula (CPS-2a), X 2 X represents the group shown in the above formula (Cg). 3 This represents a methyl group or a group represented by the above formula (Cg). n3 represents an integer greater than or equal to 0. It should be noted that the methanol-modified polyorganosiloxane shown in formula (CPS-1) and the methanol-modified polydimethylsiloxane shown in formula (CPS-1a) have hydroxyl groups in their side chains that are directly bonded to carbon atoms.

[0163] The methanol-modified polyorganosiloxane shown in formula (CPS-2) and the methanol-modified polydimethylsiloxane shown in formula (CPS-2a) have hydroxyl groups that are directly bonded to carbon atoms at one or both ends.

[0164] It should be noted that in the methanol-modified polyorganosiloxane shown in formula (CPS-1), when n2 is 2 or more, -Si(R 51 (X) 1 The siloxane units shown in )-O- can be arranged adjacently to form blocks, or they can be arranged randomly.

[0165] Furthermore, in the methanol-modified polydimethylsiloxane shown in formula (CPS-1a), when n2 is 2 or more, -Si(CH3)(X 1 The siloxane units shown in )-O- can be arranged adjacently to form blocks, or they can be arranged randomly.

[0166] While the weight-average molecular weight of the methanol-modified polyorganosiloxane is not particularly limited, it is typically 500 to 1,000,000, and preferably 5,000 to 50,000 from the viewpoint of achieving the effects of the present invention with good reproducibility. Furthermore, while its dispersibility is not particularly limited, it is typically 1.0 to 10.0, and preferably 1.5 to 5.0, more preferably 2.0 to 3.0, from the viewpoint of achieving appropriate exfoliation with good reproducibility.

[0167] The viscosity of methanol-modified polyorganosiloxanes is not particularly limited, and is typically 100–200,000 mm. 2 / s. It should be noted that the viscosity of polydimethylsiloxane is expressed as kinematic viscosity, denoted as centistokes (cSt) = mm. 2 / s. Alternatively, viscosity (mPa·s) can be divided by density (g / cm³). 3 The value can be determined from the viscosity and density measured at 25°C using a type E rotational viscometer, and can be calculated from the kinematic viscosity (mm). 2 / s) = viscosity (mPa·s) / density (g / cm³) 3 This formula is used to calculate the result.

[0168] The polyorganosiloxane used as the stripping agent component (B) can be a commercially available product or a synthetically produced polyorganosiloxane.

[0169] Commercially available polysiloxanes include, for example, the WACKERSILICONE FLUID AK series (AK 50, AK 350, AK 1000, AK 10000, AK 1000000) and GENIOPLAST manufactured by Wacker Chemie. GUM, Shin-Etsu Chemical Co., Ltd.'s dimethyl silicone oils (KF-96L, KF-96A, KF-96, KF-96H, KF-69, KF-965, KF-968), cyclic dimethyl silicone oils (KF-995); Gelest's epoxy-containing polysiloxanes (trade names CMS-227, ECMS-327, EMS-622); Shin-Etsu Chemical Co., Ltd.'s epoxy-containing polysiloxanes (KF-101, KF-1001, KF-1005, X-22-343); Dow TORAY's epoxy-containing polysiloxanes (DOWSIL). BY16-839, DOWSIL8413, DOWSIL8411; phenyl-containing polyorganosiloxanes (PMM-1043, PMM-1025, PDM-0421, PDM-0821) manufactured by Gelest Corporation; phenyl-containing polyorganosiloxanes (KF50-3000CS) manufactured by Shin-Etsu Chemical Co., Ltd.; phenyl-containing polyorganosiloxanes (TSF431, TSF433) manufactured by MOMENTIVE Corporation, etc., but not limited to these.

[0170] In addition, commercially available methanol-modified polyorganosiloxanes include, for example: KF6000, KF6001, KF6002, KF6003, X-22-4039, and X-22-4015 manufactured by Shin-Etsu Silicones Co., Ltd.; DMS-C15, DMS-C16, DMS-C21, DMS-C23, DBE-C25, DBE-C22, DMS-CA21, DMS-CS26, CMS-221, CMS-222, CMS-832, CMS-626, MCR-C12, MCR-C18, MCR-C22, MCS-C11, MCS-C13, MCR-C61, MCR-C62, and MCR-C63 manufactured by Dow Toray Co., Ltd.; and DOWSIL BY 16-201 and DOWSIL BY 16-201 manufactured by Dow Toray Co., Ltd. SF 8427 Fluid, DOWSIL SF 8428 Fluid, etc.

[0171] The content of the release agent component in the adhesive composition is not particularly limited. From the viewpoint of obtaining the appropriate effects of the present invention, it is preferably 0.01% by mass or more, more preferably 0.05% by mass or more, and particularly preferably 0.10% by mass or more, relative to the non-volatile components of the adhesive composition. As for the upper limit, there is no particular limitation, but for example, it is preferably 30% by mass or less, more preferably 25% by mass or less, and particularly preferably 20% by mass or less.

[0172] The non-volatile components of an adhesive composition refer to components other than solvents in the adhesive composition.

[0173] When the adhesive composition contains polydimethylsiloxane, there is no particular limitation on the content of polydimethylsiloxane in the adhesive composition. From the viewpoint of obtaining the appropriate effect of the present invention, it is preferably 0.5% to 30% by mass relative to the adhesive component, more preferably 1% to 10% by mass, and particularly preferably 2% to 8% by mass.

[0174] It should be noted that the adhesive components described here do not include solvents.

[0175] When the adhesive composition contains an epoxy-containing polyorganosiloxane, there is no particular limitation on the content of the epoxy-containing polyorganosiloxane in the adhesive composition. From the viewpoint of obtaining the appropriate effect of the present invention, it is preferably 0.05% to 30% by mass relative to the adhesive component, more preferably 0.1% to 5% by mass, and particularly preferably 0.2% to 3% by mass.

[0176] It should be noted that the adhesive components described here do not include solvents.

[0177] When the adhesive composition contains polydimethylsiloxane and epoxy-containing polyorganosiloxane, the mass ratio (B-1:B-2) of polydimethylsiloxane (B-1) to epoxy-containing polyorganosiloxane (B-2) in the adhesive composition is not particularly limited, but from the viewpoint of obtaining the appropriate effects of the present invention, it is preferably 20:1 to 1:10, more preferably 15:1 to 1:7.5, and particularly preferably 15:1 to 5:1.

[0178] The total proportion of polydimethylsiloxane and epoxy-containing polyorganosiloxane in the adhesive composition relative to the adhesive components is not particularly limited, but from the viewpoint of obtaining the appropriate effects of the present invention, it is preferably 1% to 30% by mass, preferably 2% to 10% by mass, and particularly preferably 3% to 8% by mass.

[0179] It should be noted that the adhesive components described here do not include solvents.

[0180] <<<Solvent>>> For purposes such as viscosity adjustment, adhesive compositions may also contain solvents, such as aliphatic hydrocarbons, aromatic hydrocarbons, ketones, etc., but are not limited to these.

[0181] More specifically, examples include: hexane, heptane, octane, nonane, decane, undecane, dodecane, isododecane, menthol, limonene, toluene, xylene, mesitylene, cumene, MIBK (methyl isobutyl ketone), butyl acetate, diisobutyl ketone, 2-octanone, 2-nonanone, 5-nonanone, etc., but are not limited to these. Such solvents can be used alone or in combination of two or more.

[0182] When the adhesive composition contains a solvent, its content is appropriately set taking into account the desired viscosity of the composition, the coating method used, the thickness of the film produced, etc., and is in the range of about 10 to 90% by mass relative to the total composition.

[0183] The viscosity of the adhesive composition used in this invention is not particularly limited, but is generally 500 to 20000 mPa·s at 25°C, preferably 1000 to 10000 mPa·s.

[0184] An example of the adhesive composition used in this invention can be manufactured by mixing adhesive component (A), release agent component (B), and solvent.

[0185] The mixing order is not particularly limited. As an example of a method for easily and reproducibly producing an adhesive composition, examples include: dissolving the adhesive component (A) and the release agent component (B) in a solvent; dissolving a portion of the adhesive component (A) and the release agent component (B) in a solvent, dissolving the remainder in the solvent, and mixing the resulting solutions. However, this method is not limited to these approaches. It should be noted that when preparing the adhesive composition, appropriate heating may be applied within a range that does not cause the components to decompose or deteriorate.

[0186] In this invention, for the purpose of removing foreign matter, the solvent, solution, etc. used may be filtered using a filter or the like during the manufacturing of the adhesive composition or after all the components have been mixed.

[0187] <Primer Film> The primer film is formed relative to the adhesive layer on the surface of the substrate on the side that is not the side where the peeling interface is to be formed.

[0188] Here, the substrate for forming the primer film, the support substrate, and the semiconductor substrate or electronic device substrate (semiconductor substrate, etc.) are all included.

[0189] In cases where interfacial delamination is to occur at the interface between a semiconductor substrate or electronic device substrate (such as a semiconductor substrate) and an adhesive layer (in the case of device delamination), a primer film is formed on the surface of the support substrate.

[0190] On the other hand, in cases where interfacial peeling is to occur at the interface between the support substrate and the adhesive layer (carrier peeling), a primer film is formed on the surface of the semiconductor substrate or electronic device substrate (semiconductor substrate, etc.).

[0191] The primer film is designed to improve the adhesion between the adhesive layer formed by the adhesive composition containing adhesive components cured by a hydrogenation silanization reaction and the substrate.

[0192] The primer film is formed by a primer film forming composition.

[0193] <<Composition for Primer Film Forming>> The primer film forming composition of the present invention contains components that further promote the hydrosilanization reaction utilized during the formation of the adhesive layer, that is, it contains components that contribute to the hydrosilanization reaction.

[0194] The primer film forming composition has the function of improving the adhesion between the substrate with the primer film on the surface and the adhesive layer. Therefore, in this specification, the primer film forming composition is also referred to as the adhesive aid composition.

[0195] Components that contribute to the hydrosilylation reaction include, for example, any compound selected from compounds containing platinum, compounds containing Si-H groups, and compounds containing vinyl groups.

[0196] Examples of platinum-containing compounds include platinum group metals or compounds containing platinum group metals.

[0197] As a platinum-containing compound, it can be, for example, a supported hydrosilylation catalyst comprising a solid support having a platinum group metal on its surface. Examples of supported catalysts include, but are not limited to: platinum-supported carbon, palladium-supported carbon, ruthenium-supported carbon, rhodium-supported carbon, platinum-supported silica, palladium-supported silica, platinum-supported alumina, palladium-supported alumina, and ruthenium-supported alumina.

[0198] As a platinum-containing compound, it can be, for example, a photoactivated hydrosilylation catalyst that can be cured by irradiation and / or heating. A photoactivated hydrosilylation catalyst refers, for example, any hydrosilylation catalyst that can catalyze the hydrosilylation reaction, particularly by exposure to radiation having a wavelength of 150–800 nanometers (nm). The suitability of a specific photoactivated hydrosilylation catalyst for the compositions of the present invention can be rapidly determined by conventional experiments.

[0199] Specific examples of the aforementioned photo-activated hydrosilylation catalysts include: bis(2,4-pentanedione)platinum(II), bis(2,4-hexanedione)platinum(II), bis(2,4-heptanedione)platinum(II), bis(1-phenyl-1,3-butanedione)platinum(II), bis(1,3-diphenyl-1,3-pyranodione)platinum(II), bis(1,1,1,5,5,5-hexafluoro-2,4- β-diketoic acid platinum(II) complexes such as pentylene diketoate (Cp)platinum(II); trimethyl (Cp)platinum, ethyl dimethyl (Cp)platinum, triethyl (Cp)platinum, trimethyl (chloro)platinum, and trimethyl (trimethylsilyl)platinum, etc., where Cp represents cyclopentadienyl, trialkyl (h-cyclopentadienyl)platinum complexes; [Pt[C6H5NNNOCH3]4, Pt[p-CN-C6H4NNNOC6H 11 】4. Pt[p-H3COC6H4NNNOC6H 11 4. Pt[p-CH3(CH2] x -C6H4NNNOCH3]4,1,5-cyclooctadiene Pt[p-CN-C6H4NNNOC6H 11 2, 1,5-Cyclooctadiene Pt [p-CH3O-C6H4NNNOCH3]2, [(C6H5)3P]3Rh [p-CN-C6H4NNNOC6H] 11] and Pd[p-CH3(CH2)] x -C6H4NNNOCH3]2 [where x is 1, 3, 5, 11 or 17] etc. triazine oxide-transition metal complex; (h 4 -1,5-cyclooctadienyl)diphenylplatinum, (h 4 -1,3,5,7-cyclooctatetraenyl)diphenylplatinum, (h 4 -2,5-norbornenedienyl)diphenylplatinum, (h 4 -1,5-Cyclooctadienyl)bis-(4-dimethylaminophenyl)platinum, (h 4 -1,5-cyclooctadienyl)bis-(4-acetylphenyl)platinum and (h 4 -1,5-cyclooctadienyl)bis-(4-trifluoromethylphenyl)platinum and other (h-diene)(σ-aryl)platinum complexes, but not limited thereto. Typically, photoactivated hydrosilylation catalysts are β-diketoic acid Pt(II) complexes, and more commonly, bis(2,4-pentanedione)platinum(II) catalysts.

[0200] There are no particular limitations on the compounds containing Si-H groups, as long as they contain Si-H groups. For example, compounds with a weight-average molecular weight (Mw) of 100 or more and 400,000 or less can be listed. In addition, compounds containing two or more Si-H groups per molecule are preferred.

[0201] The compound containing Si-H groups can be a linear compound or a cyclic compound. For example, considering solubility in solvents, a cyclic compound is preferred.

[0202] There are no particular limitations on compounds containing vinyl groups, as long as they contain vinyl groups; for example, compounds with a weight-average molecular weight (Mw) of 100 or more and 400,000 or less can be listed. In addition, compounds containing two or more vinyl groups per molecule are preferred.

[0203] The compounds that contain platinum, compounds that contain Si-H groups, and compounds that contain vinyl groups can be, for example, the adhesive components described in the "Adhesive Ingredients" section of the aforementioned "Adhesive Compositions".

[0204] Preferred embodiments of the components that facilitate the hydrosilylation reaction include, for example, platinum-containing compounds and Si-H-based compounds as shown in formulas (X-1) to (X-4) below, used in the following examples. However, this is not a limitation. Compositions for primer film formation can be manufactured, for example, by mixing components and solvents that will contribute to the hydrosilylation reaction.

[0205] As a solvent, for example, propylene glycol monomethyl ether, propylene glycol monomethyl ether acetate, etc. are used.

[0206] There is no particular limitation on the method for forming a primer film from a primer film forming composition. For example, a method for forming a primer film by coating a primer film forming composition can be listed.

[0207] There are no particular limitations on the application method of the composition for primer film formation; spin coating is the most common method.

[0208] <Support substrate> As a support substrate, there are no particular limitations as long as it is a component that can support the semiconductor substrate during processing. Examples include glass support substrates and silicon support substrates.

[0209] The shape of the support substrate is not particularly limited; for example, a disc shape can be cited. It should be noted that the disc-shaped support substrate does not need to have a completely circular surface. For example, the outer periphery of the support substrate may have a straight section called an orientation flat, or it may have a notch.

[0210] The thickness of the disk-shaped support substrate can be appropriately determined according to the size of the semiconductor substrate, and there is no particular limitation. For example, it can be 500 to 1000 μm.

[0211] The diameter of the disc-shaped support substrate can be appropriately determined according to the size of the semiconductor substrate, etc., and there is no particular limitation. For example, it can be 100 to 1000 mm.

[0212] An example of a support substrate is a glass wafer with a diameter of 300 mm and a thickness of about 700 μm.

[0213] It should be noted that when the peeling in the laminate is performed by light irradiation, a substrate that is transparent to the light used can be used as the support substrate.

[0214] <Semiconductor substrate or electronic device substrate> <<Semiconductor Substrates>> As the main material constituting the semiconductor substrate, there are no particular limitations as long as it can be used for this purpose. Examples include: silicon, silicon carbide, compound semiconductors, and glass substrates with organic resins.

[0215] The shape of the semiconductor substrate is not particularly limited; for example, it can be disc-shaped. It should be noted that a disc-shaped semiconductor substrate does not need to have a completely circular surface. For example, the outer periphery of the semiconductor substrate may have a straight section called an orientation plane, or it may have a cutout called a groove.

[0216] The thickness of the disc-shaped semiconductor substrate can be appropriately determined according to the intended use of the semiconductor substrate, and there is no particular limitation. For example, it can be 500 to 1000 μm.

[0217] The diameter of the disc-shaped semiconductor substrate can be appropriately determined according to the intended use of the semiconductor substrate, and there is no particular limitation. For example, it can be 100 to 1000 mm.

[0218] Semiconductor substrates can also have bumps. Bumps refer to protruding terminals.

[0219] In a laminate, where the semiconductor substrate has bumps, the semiconductor substrate has bumps on the support substrate side.

[0220] In semiconductor substrates, bumps are typically formed on the surface where circuitry is formed. The circuitry can be single-layered or multi-layered. There are no particular restrictions on the shape of the circuitry.

[0221] In a semiconductor substrate, the side opposite to the side with bumps (the back side) is the side to be processed.

[0222] There are no particular limitations on the material, size, shape, structure, or density of bumps on a semiconductor substrate.

[0223] Examples of bumps include: spherical bumps, printed bumps, stud bumps, plated bumps, etc.

[0224] Typically, the height, radius, and spacing of the bumps are determined appropriately based on the conditions that the bump height is approximately 1–200 μm, the bump radius is approximately 1–200 μm, and the bump spacing is approximately 1–500 μm.

[0225] Materials used for bumps include, for example, low-melting-point solder, high-melting-point solder, tin, indium, gold, silver, and copper. Bumps can be composed of a single component or multiple components. More specifically, examples include SnAg bumps, SnBi bumps, Sn bumps, AuSn bumps, and other Sn-based alloy plating.

[0226] In addition, the bump can also have a stacked structure, which includes a metal layer composed of at least any of these components.

[0227] An example of a semiconductor substrate is a silicon wafer with a diameter of 300 mm and a thickness of about 770 μm.

[0228] <<Electronic Device Substrates>> Electronic device substrate refers to a substrate having electronic devices. In this invention, for example, it refers to a substrate composed of a layer in which multiple semiconductor chip substrates are embedded in a sealing resin, that is, a substrate composed of multiple semiconductor chip substrates and a sealing resin disposed between the semiconductor chip substrates.

[0229] Here, "electronic device" refers to a component that constitutes at least a part of an electronic component. There are no particular limitations on the electronic device; it can be an electronic device with various mechanical structures and circuits formed on the surface of a semiconductor substrate. Preferably, the electronic device is a composite of a component made of metal or semiconductor and a resin that seals or insulates the component. The electronic device can be an electronic device that is sealed or insulated with sealing or insulating materials, such as the redistribution layer and / or semiconductor elements or other components described later, and has a single-layer or multi-layer structure.

[0230] <Layer Composition of Laminated Structures> The following illustration uses the accompanying drawings to illustrate an example of the structure of a laminate.

[0231] Figure 1 A schematic cross-sectional view showing an example of a stacked body.

[0232] Figure 1 The laminate sequentially comprises: a semiconductor substrate 1, an adhesive layer 2, and a support substrate 4. That is, the adhesive layer 2 is disposed between the semiconductor substrate 1 and the support substrate 4. A primer film 3 is formed on the surface of the support substrate 4.

[0233] Figure 1 The stacked structure becomes a device-stripping type stacked structure.

[0234] Figure 2 A schematic cross-sectional view showing another example of a stacked structure.

[0235] Figure 2 The laminate sequentially comprises: a support substrate 24, an adhesive layer 22, and an electronic device substrate 26.

[0236] The electronic device substrate 26 has: a plurality of semiconductor chip substrates 21 and a sealing resin 25 disposed between the semiconductor chip substrates 21 as a sealing material.

[0237] An adhesive layer 22 is disposed between the electronic device substrate 26 and the support substrate 24. A primer film 23 is formed on the surface of the support substrate 24.

[0238] Figure 2 The stacked structure becomes a device-stripping type stacked structure.

[0239] (Method for manufacturing laminates) The method for manufacturing a laminate of the present invention is characterized in that the laminate comprises: a support substrate; a semiconductor substrate or an electronic device substrate; an adhesive layer disposed between the semiconductor substrate or the electronic device substrate and the support substrate; and a primer film formed on the surface of any one of the semiconductor substrate or the electronic device substrate and the support substrate. The method for manufacturing the laminate comprises a step of forming a primer film by coating the surface of any one of the semiconductor substrate or the electronic device substrate and the support substrate with the above-described primer film forming composition.

[0240] Furthermore, the manufacturing method of the laminate of the present invention can be the following manufacturing method, which includes: a step of further coating any one of the semiconductor substrate or the electronic device substrate and the support substrate without the primer film with an adhesive composition for forming the adhesive layer; a step of bonding the substrate with the primer film and the substrate coated with the adhesive composition together, and then performing a heat treatment, thereby forming an adhesive layer between the semiconductor substrate or the electronic device substrate and the support substrate.

[0241] Furthermore, especially considering that the laminate is a device release type laminate, the manufacturing method of the laminate of the present invention is preferably the following manufacturing method, which includes: a step of forming a primer film by coating the surface of a support substrate with the above-mentioned primer film forming composition; a step of coating a semiconductor substrate or electronic device substrate with an adhesive composition for forming an adhesive layer; a step of bonding the support substrate with the primer film formed thereon to the semiconductor substrate or the electronic device substrate with the adhesive composition coated thereon, and then performing a heat treatment, thereby forming an adhesive layer between the semiconductor substrate or the electronic device substrate and the support substrate.

[0242] by Figure 1 The laminate shown is an example. The manufacturing method of the laminate is described below.

[0243] An example of the laminate of the present invention can be manufactured by a method including the following first to fourth steps.

[0244] The first step is to apply a primer film forming composition to a support substrate and form a primer film on the surface of the support substrate.

[0245] The second step is to apply the adhesive composition onto the semiconductor substrate to form an adhesive coating layer (which may be further heated to form the adhesive layer if necessary).

[0246] The third step is a process of placing a support substrate with a primer film on an adhesive coating layer or adhesive layer, and bonding the support substrate with a primer film on its surface to a semiconductor substrate through the adhesive coating layer or adhesive layer while performing at least one of heat treatment and depressurization treatment.

[0247] The fourth step is to cure the adhesive coating layer by post-heating, thus forming the adhesive layer.

[0248] There are no particular limitations on the application method of the composition for primer film formation; spin coating is the most common method.

[0249] For example, the spin coating conditions are 60 seconds at 1000 rpm.

[0250] There are no particular limitations on the coating method of the adhesive composition; spin coating is the most common method. It should be noted that a separate coating film can be formed using spin coating or similar methods to create a sheet-like coating film, which can then be pasted as the adhesive coating layer.

[0251] The heating temperature of the coated adhesive composition varies depending on the type and amount of adhesive components contained in the adhesive composition; whether it contains solvent; the boiling point of the solvent used; and the desired thickness of the adhesive layer, etc. Therefore, it cannot be specified in general terms. It is usually 80 to 150°C, and the heating time is usually 30 seconds to 5 minutes.

[0252] When the adhesive composition contains a solvent, the coated adhesive composition is typically heated.

[0253] The thickness of the adhesive coating layer obtained by heating the coating composition, if necessary, is typically around 5 to 500 μm, appropriately determined in a manner that ultimately results in the aforementioned range of adhesive layer thickness.

[0254] In this invention, heat treatment or depressurization treatment, or both, can be performed while applying a load in the thickness direction of the semiconductor substrate and the support substrate, followed by a post-heat treatment, thereby obtaining the laminate of this invention. It should be noted that any of the treatment conditions—heat treatment, depressurization treatment, or a combination of both—can be appropriately determined based on various factors such as the type of adhesive composition, film thickness, and required adhesive strength.

[0255] From the viewpoint of removing solvent from the composition, the heat treatment is generally appropriately determined within the range of 20 to 160°C. In particular, from the viewpoint of suppressing or avoiding excessive curing and unnecessary deterioration of the adhesive component (A), it is preferably 150°C or lower, more preferably 130°C or lower, and the heating time is appropriately determined according to the heating temperature and the type of adhesive. From the viewpoint of reliably achieving proper adhesion, it is generally 30 seconds or more, preferably 1 minute or more, and from the viewpoint of suppressing deterioration of the adhesive layer and other components, it is generally 10 minutes or less, preferably 5 minutes or less.

[0256] Decompression treatment simply involves exposing the adhesive coating layers that are in contact with each other to a pressure of 10–10000 Pa. The decompression treatment time is usually 1–30 minutes.

[0257] The load in the thickness direction of the semiconductor substrate and the support substrate is not particularly limited as long as it does not adversely affect the semiconductor substrate and the support substrate and the layers between them, and can make them firmly and tightly bonded. It is usually in the range of 10 to 50,000 N.

[0258] From the viewpoint of achieving sufficient curing speed, the post-heating temperature is preferably 120°C or higher, and from the viewpoint of preventing deterioration of the substrate and each layer, the post-heating temperature is preferably 260°C or lower.

[0259] From the viewpoint of achieving proper bonding between the substrate and the layers constituting the laminate, the post-heating time is usually 1 minute or more, preferably 5 minutes or more. From the viewpoint of suppressing or avoiding adverse effects on each layer caused by excessive heating, the post-heating time is usually 180 minutes or less, preferably 120 minutes or less.

[0260] Heating can be performed using a heating plate, oven, or similar equipment. When using a heating plate for post-heating, either the semiconductor substrate or the support substrate of the laminate can be heated with the substrate facing downwards. However, from the viewpoint of achieving proper peeling with good reproducibility, it is preferable to heat the substrate with the semiconductor substrate facing downwards.

[0261] It should be noted that one of the purposes of the post-heat treatment is to achieve an adhesive layer that functions as a more suitable self-supporting film, particularly to achieve proper curing based on the hydrosilylation reaction.

[0262] Figures 3A-3C It is used for performing Figure 1 The diagram illustrates one method for manufacturing the laminated body.

[0263] First, a laminate with a primer film 3 is prepared on the support substrate 4. Figure 3AThis laminate can be obtained, for example, by applying a primer film forming composition onto a support substrate 4 using spin coating.

[0264] Next, a laminate with an adhesive coating layer 2a is prepared to be formed on the semiconductor substrate 1. Figure 3B This laminate can be obtained, for example, by applying an adhesive composition onto a semiconductor substrate 1 and then heating it.

[0265] Next, Figure 3A The laminate shown consists of a support substrate 4 with a primer film 3 formed on its surface and... Figure 3B The laminate shown, consisting of a semiconductor substrate 1 having an adhesive coating layer 2a, is bonded to a support substrate 4 with the adhesive coating layer 2a in contact with the support substrate 4 through a primer film 3. Then, after applying a load in the thickness direction of the semiconductor substrate 1 and the support substrate 4 under reduced pressure, a heating device (not shown; heating plate) is placed on the side of the semiconductor substrate 1 opposite to the side in contact with the adhesive coating layer 2a. The adhesive coating layer 2a is heated and cured by the heating device, transforming it into an adhesive layer 2 (…). Figure 3C ).

[0266] pass Figures 3A-3C The process shown can yield Figure 1 The layered structure shown.

[0267] In addition, with Figure 2 The laminate shown is an example. The manufacturing method of the laminate is described below.

[0268] An example of the laminate of the present invention can be manufactured by a method including the following first (D) steps to fifth (D) steps.

[0269] Step 1 (D): A step of applying a primer film forming composition to a support substrate and forming a primer film on the surface of the support substrate.

[0270] Step 2 (D): The process of applying the adhesive composition onto the semiconductor chip substrate to form an adhesive coating layer (which may be further heated to form an adhesive layer if necessary).

[0271] The third (D) process: a process of placing a support substrate with a primer film on its surface onto an adhesive coating layer or adhesive layer, and bonding the support substrate with the primer film on its surface to a semiconductor chip substrate through the adhesive coating layer or adhesive layer while performing at least one of heat treatment and depressurization treatment.

[0272] Fourth (D) step: The process of curing the adhesive coating layer by post-heat treatment to form the adhesive layer.

[0273] Fifth (D) process: The process of sealing the semiconductor chip substrate fixed on the adhesive layer with sealing resin.

[0274] Figures 4A to 4D It is used for performing Figure 2 The diagram illustrates one method for manufacturing the laminated body.

[0275] First, a laminate with a primer film 23 is prepared on the support substrate 24. Figure 4A This laminate can be obtained, for example, by applying a primer film forming composition onto a support substrate 24 using spin coating.

[0276] Next, a laminate with an adhesive coating layer 22a is prepared to be formed on the semiconductor chip substrate 21. Figure 4B This laminate can be obtained, for example, by applying an adhesive composition onto a semiconductor chip substrate 21 and then heating it. Alternatively, the adhesive coating layer 22a can be heated to form the adhesive layer 22.

[0277] Next, Figure 4A The laminate shown consists of a support substrate 24 with a primer film 23 formed on its surface and a support substrate 24 with a primer film 23 formed on its surface. Figure 4B The laminate shown, consisting of a semiconductor chip substrate 21 having an adhesive coating layer 22a, is bonded to a support substrate 24 with the adhesive coating layer 22a in contact with the support substrate 24 through a primer film 23. Then, after applying a load in the thickness direction of the semiconductor chip substrate 21 and the support substrate 24 under reduced pressure, a heating device (not shown; heating plate) is placed on the side of the semiconductor chip substrate 21 opposite to the side in contact with the adhesive coating layer 22a. The adhesive coating layer 22a is heated and cured by the heating device, transforming it into an adhesive layer 22 (…). Figure 4C ).

[0278] Next, as Figure 4D As shown, the semiconductor chip substrate 21, which is fixed to the adhesive layer 22, is sealed using a sealing resin 25. Figure 4D In this process, multiple semiconductor chip substrates 21, temporarily bonded to the support substrate 24 through an adhesive layer 22, are sealed with a sealing resin 25. An electronic device substrate 26, having semiconductor chip substrates 21 and sealing resin 25 disposed between the semiconductor chip substrates 21, is formed on the adhesive layer 22. Thus, the electronic device substrate 26 becomes a substrate layer in which multiple semiconductor chip substrates are embedded in the sealing resin.

[0279] pass Figures 4A to 4D The process shown can yield Figure 2 The layered structure shown.

[0280] <Sealing Process> The semiconductor chip substrate 21 is sealed using a sealing material.

[0281] As a sealing material for sealing the semiconductor chip substrate 21, a component capable of insulating or sealing components made of metal or semiconductor is used.

[0282] In this invention, a resin composition (sealing resin) is used as a sealing material. There are no particular limitations on the type of sealing resin, as long as it can seal and / or insulate a metal or semiconductor; for example, epoxy resins or silicone resins are preferred.

[0283] In addition to resin components, sealing materials may also contain other components such as fillers. Examples of fillers include spherical silica particles.

[0284] In the sealing process, sealing resin heated to, for example, 130–170°C to maintain a high viscosity is supplied onto the adhesive layer 22 to cover the semiconductor chip substrate 21, and compression molding is performed, thereby forming a layer of sealing resin 25 on the adhesive layer 22. The temperature conditions at this time are, for example, 130–170°C. Furthermore, the pressure applied to the semiconductor chip substrate 21 is, for example, 50–500 N / cm. 2 .

[0285] (Method for manufacturing processed semiconductor substrates or electronic device substrates) If the laminate of the present invention is used, a method for manufacturing a processed semiconductor substrate or a method for manufacturing a processed electronic device substrate can be provided.

[0286] The method for manufacturing the processed semiconductor substrate or electronic device substrate of the present invention is characterized by comprising: a fifth step of processing the semiconductor substrate or electronic device substrate (semiconductor substrate, etc.) in the laminate of the present invention; and a sixth step of separating the semiconductor substrate or electronic device substrate (semiconductor substrate, etc.) processed by the fifth step from the support substrate in the laminate.

[0287] Thus, the method for manufacturing the processed semiconductor substrate of the present invention includes the fifth step and the sixth step described below. The method for manufacturing the processed electronic device substrate may further include the seventh step described below.

[0288] Fifth step: A step of processing the semiconductor substrate or electronic device substrate (semiconductor substrate, etc.) in the laminate of the present invention.

[0289] The sixth process is the process of separating the semiconductor substrate or electronic device substrate (semiconductor substrate, etc.) processed in the fifth process from the support substrate.

[0290] The seventh process is the cleaning of the processed semiconductor substrate or electronic device substrate after the sixth process.

[0291] The processing performed on the semiconductor substrate or electronic device substrate (semiconductor substrate, etc.) in the fifth process refers, for example, processing on the opposite side of the circuit surface of the wafer, such as wafer thinning achieved by grinding the back side of the wafer. Then, for example, through-silicon vias (TSVs) are formed, and the thinned wafer is peeled off from the support substrate to form a wafer stack for three-dimensional mounting. Furthermore, for example, back-side electrodes are formed before and after three-dimensional mounting. During the wafer thinning and TSV processes, the wafer is bonded to the support substrate and subjected to heat of approximately 250–350°C. The stack of the present invention typically includes an adhesive layer and possesses heat resistance to the load.

[0292] It should be noted that the processing is not limited to the above-mentioned processing, and also includes, for example, the mounting process of semiconductor components in which a temporary bonding is performed with a support substrate to support the substrate used for mounting semiconductor components.

[0293] In particular, as a laminate, in the case of a laminate having an electronic device substrate, the processing performed on the electronic device substrate in the fifth process can include, for example, the grinding process and the wiring layer formation process described below.

[0294] <Grinding process> The grinding process is a process of grinding the resin portion of the sealing resin 25 layer in the electronic device substrate 26 in such a way that a part of the semiconductor chip substrate 21 is exposed.

[0295] <Wiring layer formation process> The wiring layer formation process is a process of forming a wiring layer on the exposed semiconductor chip substrate 21 after the above-mentioned grinding process.

[0296] A wiring layer, also known as a redistribution layer (RDL), is a thin film that forms the wiring that connects to the substrate. It can have a single-layer or multi-layer structure. The wiring layer can utilize conductive materials (such as metals like aluminum, copper, titanium, nickel, gold, and silver, as well as silver-tin alloys) on a dielectric (silicon oxide (SiO2)). x A layer formed by wiring between photosensitive resins such as photosensitive epoxy resin, etc., but not limited to this.

[0297] The following methods can be listed as examples of methods for forming a wiring layer.

[0298] First, silicon oxide (SiO2) is formed on the layer of sealing resin 25. xThe dielectric layer consists of photosensitive resin, etc. A dielectric layer composed of silicon oxide can be formed, for example, by sputtering or vacuum evaporation. A dielectric layer formed of photosensitive resin can be formed, for example, by applying the photosensitive resin onto the sealing resin 25 layer using methods such as spin coating, dip coating, roller blade coating, spray coating, or slot coating.

[0299] Next, wiring is formed on the dielectric layer using a conductive material such as a metal. Methods for forming the wiring include, for example, well-known semiconductor processes such as photolithography (resist photolithography) and etching. Examples of such photolithography processes include photolithography using a positive resist material and photolithography using a negative resist material.

[0300] In the sixth process, there are no particular limitations on the method of separating (peeling) the semiconductor substrate or electronic device substrate from the support substrate (semiconductor substrate, etc.).

[0301] For example, a method of mechanically peeling off a device with a pointed tip (so-called a peeler) can be listed. Specifically, for example, after inserting the pointed tip between a semiconductor substrate or electronic device substrate (semiconductor substrate, etc.) and a support substrate, the semiconductor substrate or electronic device substrate (semiconductor substrate, etc.) is separated from the support substrate.

[0302] The substrate can be cleaned by spraying a cleaning agent composition onto the surface of at least any one of the separated semiconductor substrate or electronic device substrate (semiconductor substrate, etc.) and support substrate, or by immersing the separated semiconductor substrate or electronic device substrate (semiconductor substrate, etc.) or support substrate in the cleaning agent composition.

[0303] In addition, the surface of processed semiconductor substrates can also be cleaned using tools such as tape removers.

[0304] As an example of cleaning the substrate, a seventh step, such as cleaning the processed semiconductor substrate, can be performed after the sixth step.

[0305] The following substances are examples of cleaning agent compositions used for cleaning.

[0306] Cleaning agent compositions typically contain solvents.

[0307] Examples of solvents include: lactones, ketones, polyols, compounds with ester bonds, derivatives of polyols, cyclic ethers, esters, and aromatic organic solvents.

[0308] Examples of lactones include γ-butyrolactone.

[0309] Examples of ketones include acetone, methyl ethyl ketone, cyclohexanone, methyl n-pentyl ketone, methyl isopentyl ketone, and 2-heptanone.

[0310] Examples of polyols include ethylene glycol, diethylene glycol, propylene glycol, and dipropylene glycol.

[0311] Examples of compounds containing ester bonds include ethylene glycol monoacetate, diethylene glycol monoacetate, propylene glycol monoacetate, and dipropylene glycol monoacetate.

[0312] Examples of polyol derivatives include monomethyl ethers, monoethyl ethers, monopropyl ethers, monobutyl ethers, and other monoalkyl ethers or monophenyl ethers of the aforementioned polyols or compounds having ester bonds. Among these, propylene glycol monomethyl ether acetate (PGMEA) and propylene glycol monomethyl ether (PGME) are preferred.

[0313] Examples of cyclic ethers include dioxane.

[0314] Examples of esters include: methyl lactate, ethyl lactate (EL), methyl acetate, ethyl acetate, butyl acetate, methyl pyruvate, ethyl pyruvate, methyl methoxypropionate, ethyl ethoxypropionate, etc.

[0315] Examples of aromatic organic solvents include: anisole, benzyl ethyl ether, methyl anisole, diphenyl ether, dibenzyl ether, phenethyl ether, phenylbutyl ether, ethylbenzene, diethylbenzene, pentylbenzene, isopropylbenzene, toluene, xylene, isopropyltoluene, mesitylene, etc.

[0316] They can be used individually or in combination of two or more.

[0317] Among them, propylene glycol monomethyl ether acetate (PGMEA), propylene glycol monomethyl ether (PGME), cyclohexanone, and ethyl lactate (EL) are preferred.

[0318] Furthermore, a mixed solvent prepared by mixing PGMEA with a polar solvent is preferred. The mixing ratio (mass ratio) can be appropriately determined by taking into account the compatibility of PGMEA with the polar solvent, etc. Preferably, it is set in the range of 1:9 to 9:1, and more preferably in the range of 2:8 to 8:2.

[0319] For example, when using EL as a polar solvent, the mass ratio of PGMEA to EL is preferably 1:9 to 9:1, more preferably 2:8 to 8:2. Furthermore, when using PGME as a polar solvent, the mass ratio of PGMEA to PGME is preferably 1:9 to 9:1, more preferably 2:8 to 8:2, and even more preferably 3:7 to 7:3. Moreover, when using PGME and cyclohexanone as polar solvents, the mass ratio of PGMEA to (PGME + cyclohexanone) is preferably 1:9 to 9:1, more preferably 2:8 to 8:2, and even more preferably 3:7 to 7:3.

[0320] The cleaning agent composition may or may not contain salt. From the perspective of increasing versatility in the processing of semiconductor substrates using laminates and reducing costs, it is preferable to not contain salt.

[0321] As an example of a cleaning agent composition containing salt, a cleaning agent composition containing quaternary ammonium salt and solvent can be cited.

[0322] Quaternary ammonium salts are composed of quaternary ammonium cations and anions, and there are no particular limitations as long as they are used for this purpose.

[0323] Typical examples of such quaternary ammonium cations include tetra(hydrocarbon)ammonium cations. On the other hand, examples of their paired anions include hydroxide ions (OH-). － ); Fluoride ions (F) － ), chloride ions (Cl) － ), bromide ions (Br) － ), iodide ions (I － Halogen ions such as tetrafluoroborate ions (BF4) － ); hexafluorophosphate ions (PF6) － (etc.), but not limited to these.

[0324] The quaternary ammonium salt is preferably a halogenated quaternary ammonium salt, and more preferably a fluorine-containing quaternary ammonium salt.

[0325] In quaternary ammonium salts, halogen atoms can be contained in cations or anions, preferably in anions.

[0326] In a preferred embodiment, the fluorine-containing quaternary ammonium salt is tetra(hydrocarbon)ammonium fluoride.

[0327] Specific examples of hydrocarbon groups in tetra(hydrocarbon)ammonium fluoride include: alkyl groups with 1 to 20 carbon atoms, alkenyl groups with 2 to 20 carbon atoms, alkynyl groups with 2 to 20 carbon atoms, and aryl groups with 6 to 20 carbon atoms.

[0328] In a more preferred embodiment, the tetra(hydrocarbon) fluoride comprises tetraalkyl ammonium fluoride.

[0329] Specific examples of tetraalkylammonium fluoride include: tetramethylammonium fluoride, tetraethylammonium fluoride, tetrapropylammonium fluoride, tetrabutylammonium fluoride (also known as tetrabutylammonium fluoride), etc., but are not limited to these. Among them, tetrabutylammonium fluoride is preferred.

[0330] Quaternary ammonium salts such as tetra(hydrocarbon)ammonium fluoride can also be used in hydrate form. Furthermore, quaternary ammonium salts such as tetra(hydrocarbon)ammonium fluoride can be used alone or in combination of two or more.

[0331] There is no particular limitation on the amount of quaternary ammonium salt as long as it is dissolved in the solvent contained in the cleaning agent composition, and it is usually 0.1 to 30% by mass relative to the cleaning agent composition.

[0332] When the cleaning agent composition contains salt, there are no particular limitations on the solvent used, as long as it is used for this purpose and dissolves salts such as quaternary ammonium salts. From the viewpoints of obtaining a cleaning agent composition with excellent cleaning properties with good reproducibility and obtaining a cleaning agent composition with excellent uniformity by good dissolution of salts such as quaternary ammonium salts, the cleaning agent composition preferably contains one or more amide solvents.

[0333] As a preferred example of an amide solvent, an amide derivative represented by formula (Z) can be cited. In the formula, R 0 The symbol represents ethyl, propyl, or isopropyl, with ethyl or isopropyl being preferred, and ethyl being more preferred. R A and R B Each alkyl group independently represents an alkyl group having 1 to 4 carbon atoms. Alkyl groups having 1 to 4 carbon atoms can be any type of linear, branched, or cyclic form, specifically including: methyl, ethyl, propyl, isopropyl, cyclopropyl, n-butyl, isobutyl, sec-butyl, tert-butyl, cyclobutyl, etc. Among these, R... A and R B Preferably, it is methyl or ethyl, more preferably both are methyl or ethyl, and even more preferably both are methyl.

[0334] Examples of amide derivatives represented by formula (Z) include: N,N-dimethylpropionamide, N,N-diethylpropionamide, N-ethyl-N-methylpropionamide, N,N-dimethylbutyramide, N,N-diethylbutyramide, N-ethyl-N-methylbutyramide, N,N-dimethylisobutyramide, N,N-diethylisobutyramide, and N-ethyl-N-methylisobutyramide. Among these, N,N-dimethylpropionamide and N,N-dimethylisobutyramide are particularly preferred, and N,N-dimethylpropionamide is more preferred.

[0335] The amide derivatives shown in formula (Z) can be synthesized by substitution reaction of the corresponding carboxylic acid ester with an amine, or by using commercially available products.

[0336] Another example of a preferred amide solvent is a lactam compound represented by formula (Y). In formula (Y), R 101 R represents an alkyl group having 1 to 6 hydrogen atoms or carbon atoms. 102 This refers to alkylene groups having 1 to 6 carbon atoms. Specific examples of alkyl groups having 1 to 6 carbon atoms include: methyl, ethyl, n-propyl, n-butyl, etc. Specific examples of alkylene groups having 1 to 6 carbon atoms include: methylene, ethylene, trimethylene, tetramethylene, pentamethylene, hexamethylene, etc., but are not limited to these.

[0337] Specific examples of the lactam compounds represented by formula (Y) include: α-lactam compounds, β-lactam compounds, γ-lactam compounds, δ-lactam compounds, etc., which can be used alone or in combination of two or more.

[0338] In a preferred embodiment, the lactam compound represented by formula (Y) comprises 1-alkyl-2-pyrrolidone (N-alkyl-γ-butyrolactam), in a more preferred embodiment it comprises N-methylpyrrolidone (NMP) or N-ethylpyrrolidone (NEP), and in a further preferred embodiment it comprises N-methylpyrrolidone (NMP).

[0339] It should be noted that the cleaning agent composition used in this invention may also contain water as a solvent, but from the viewpoint of avoiding substrate corrosion, it is generally intended to use only organic solvents. It should be noted that in this case, the cleaning agent composition may contain hydrated water of salt or trace amounts of water contained in the organic solvent; this is not to negate the possibility of these components being present. The water content of the cleaning agent composition used in this invention is typically 5% by mass or less.

[0340] Regarding the constituent elements and methodological elements related to the above-described steps in the method for manufacturing the processed semiconductor substrate or electronic device substrate (semiconductor substrate, etc.) of the present invention, various modifications may be made as long as they do not depart from the spirit of the present invention.

[0341] The manufacturing method of the processed semiconductor substrate or electronic device substrate (semiconductor substrate, etc.) of the present invention may also include processes other than those described above.

[0342] (Composition for primer film formation) The primer film forming composition of the present invention is used to improve the adhesion between an adhesive layer formed from an adhesive composition containing an adhesive component cured by a hydrosilanization reaction and a substrate. The primer film forming composition contains components that contribute to the hydrosilanization reaction, specifically as described in the column "Primer Film Forming Composition" of the "Primer Film" section in the above (Laminate) section.

[0343] The adhesive layer, which improves the adhesion of the primer film forming composition to the substrate, is described in the <Adhesive Layer> column of (Laminate) above.

[0344] Example The present invention will be described in more detail below with reference to specific embodiments, but the present invention is not limited to the embodiments described below. It should be noted that the apparatus used is as described below.

[0345] [Apparatus] (1) Mixer A: ARE-500 self-rotating and revolution-rotating mixer manufactured by THINKY Corporation. (2) Mixer B: AS ONE (Co., Ltd.) Mixing Rotor VMR-5R (3) Mixer C: Shin-Dong Science & Technology Co., Ltd. THREE-ONE MOTOR BLW-600 (4) Spin coating device: APOGEE Co., Ltd. coating machine (5) Determination of complex viscosity: Anton Paar Co., Ltd. MCR-302 rheometer (6) Vacuum bonding device: Automatic bonding machine manufactured by SUSS MicroTec Co., Ltd. (7) Peeling device Y: Automatic peeling machine manufactured by SUSS MicroTec Co., Ltd. [1] Preparation of primer film forming composition (adhesive aid composition) [Preparation Example 1-1] Add 0.01 g of tetra(triphenylphosphine)platinum (manufactured by Tokyo Chemical Industry Co., Ltd.) as shown in formula (X-1), 49.995 g of propylene glycol monomethyl ether, and 49.995 g of propylene glycol monomethyl ether acetate to a 100 mL glass container with a lid, and stir with a mixer A for 5 minutes to obtain a primer film forming composition (hereinafter also referred to as an adhesive aid composition).

[0346] [Preparation Examples 1-2] 0.01 g of octa(dimethylsiloxy)octasesquioxane (manufactured by Tokyo Chemical Industry Co., Ltd.) and 99.99 g of propylene glycol monomethyl ether acetate were added to a 100 mL glass container with a lid and stirred for 5 minutes using mixer A to obtain an adhesive aid composition.

[0347] [Preparation Examples 1-3] Add 0.01 g of bis(2,4-pentanedione)platinum (manufactured by Tokyo Chemical Industry Co., Ltd.) as shown in formula (X-3), 49.995 g of menthol, and 49.995 g of propylene glycol monomethyl ether acetate to a 100 mL glass container with a lid, and stir with mixer A for 5 minutes to obtain an adhesive aid composition.

[0348] [Preparation Examples 1-4] Add 0.01 g of a platinum (0)-1,3-divinyl-1,1,3,3-tetramethyldisiloxane complex solution (prepared by Sigma-Aldrich) and 99.99 g of menthol to a 100 mL glass container with a lid, and stir with a mixer A for 5 minutes to obtain an adhesive aid composition.

[0349] [Preparation Examples 1-5] Add 0.01 g of [bicyclo[2.2.1]hept-5-en-2-yl]triethoxysilane (Gelest Inc.) and 99.99 g of propylene glycol monomethyl ether acetate as shown in the following formula (XR-1) to a 100 mL glass container with a lid, and stir with a mixer A for 5 minutes to obtain an adhesive aid composition.

[0350] [Preparation Examples 1-6] Add 0.1 g of [bicyclo[2.2.1]hept-5-en-2-yl]triethoxysilane (Gelest Inc.) and 99.9 g of propylene glycol monomethyl ether acetate to a 100 mL glass container with a lid, and stir with mixer A for 5 minutes to obtain an adhesive aid composition. [2] Preparation of adhesive composition [Preparation Example 2-1] Add 1.67 g of 1,1-diphenyl-2-propyn-1-ol (manufactured by Tokyo Chemical Industry Co., Ltd.) and 1.67 g of 1-acetylen-1-cyclohexanol (manufactured by Wacker Chemie Co., Ltd.) to a 50 mL glass container with a lid, and stir with stirrer A for 5 minutes to obtain mixture (I).

[0351] Next, 47.84 g of polyorganosiloxane (complex viscosity 6000 Pa·s, weight average molecular weight 642000 (dispersion 2.6), trade name GENIOPLAST GUM manufactured by Wacker Chemie), 100.18 g of linear polydimethylsiloxane containing SiH groups (manufactured by Wacker Chemie) with a viscosity of 100 mPa·s, and 9.77 g of p-menthane (manufactured by NIPPON TERPENE CHEMICALS Co., Ltd.) were added to a 200 mL glass container with a lid. The mixture was stirred with stirrer A until it became homogeneous, thus obtaining mixture (II).

[0352] Next, 921.14 g of a menthol solution (81.2% by mass) containing vinyl MQ resin (manufactured by Wacker Chemie) and 0.2 g of platinum catalyst (manufactured by Wacker Chemie) were added to a 1 L plastic container with a lid. The mixture was stirred with mixer B until it became homogeneous, thus obtaining mixture (III).

[0353] Next, 1.67 g of mixture (I), 157.67 g of a solution obtained by separately mixing vinyl-containing MQ resin (manufactured by Wacker Chemie), vinyl-containing linear polydimethylsiloxane (manufactured by Wacker Chemie) with a viscosity of 200 mPa·s, and SiH-containing linear polydimethylsiloxane (manufactured by Wacker Chemie) with a viscosity of 100 mPa·s at a ratio of 51.6:38.9:9.5, and 131.49 g of mixture (II) were added to a 1 L plastic container with a lid. The mixture was stirred using a mixer B until it became homogeneous.

[0354] Add 614.23g of mixture (III), 7.97g of epoxy modified silicone oil (trade name X-22-343 manufactured by Shin-Etsu Chemical Industry Co., Ltd.), and 21.72g of menthol (manufactured by NIPPON TERPENE CHEMICALS Co., Ltd.), and stir with mixer B until the mixture becomes homogeneous.

[0355] Finally, the mixture was filtered through a 300-mesh nylon filter to obtain the adhesive composition.

[0356] [3] Fabrication of laminated bodies [Example 1-1] The adhesive aid composition obtained in Preparation Example 1-1 was spin-coated at 1500 rpm onto a 300 mm silicon wafer (775 μm thick) serving as the carrier side for 60 seconds to form a primer film (also known as an adhesive aid coating film) on the silicon wafer serving as the support substrate.

[0357] On the other hand, the adhesive composition obtained in Preparation Example 2-1 was spin-coated onto a 300 mm thick silicon wafer (775 μm thick) serving as a substrate on the device side, such that the film thickness in the final laminate was 50 μm, thereby forming an adhesive coating layer on the silicon wafer serving as a semiconductor substrate.

[0358] Then, using a bonding apparatus, a support substrate with an adhesive aid coating film and a semiconductor substrate with an adhesive coating layer are bonded together by clamping the adhesive aid coating film and the adhesive coating layer. The substrate is then subjected to heat treatments at 130°C for 5 minutes and 200°C for 5 minutes to produce a laminate. It should be noted that the bonding is performed under a load of 30 N at a temperature of 23°C and a pressure reduction of 1000 Pa.

[0359] [Examples 1-2] The adhesive-aiding composition obtained in Preparation Examples 1-2 was used instead of the adhesive-aiding composition obtained in Preparation Example 1-1. Otherwise, the laminate was obtained by the same method as in Example 1-1.

[0360] [Examples 1-3] The adhesive-aiding compositions obtained in Preparation Examples 1-3 were used instead of the adhesive-aiding compositions obtained in Preparation Example 1-1. Otherwise, the laminates were obtained by the same method as in Example 1-1.

[0361] [Examples 1-4] The adhesive-aiding compositions obtained in Preparation Examples 1-4 were used instead of the adhesive-aiding compositions obtained in Preparation Example 1-1. Otherwise, the laminates were obtained by the same method as in Example 1-1.

[0362] [Comparative Example 1-1] The adhesive-aiding compositions obtained in Preparation Examples 1-5 were used instead of the adhesive-aiding compositions obtained in Preparation Example 1-1. Otherwise, the laminates were obtained by the same method as in Example 1-1.

[0363] [Comparative Examples 1-2] The adhesive-aiding compositions obtained in Preparation Examples 1-6 were used instead of the adhesive-aiding compositions obtained in Preparation Example 1-1. Otherwise, the laminates were obtained by the same method as in Example 1-1.

[0364] [Comparative Examples 1-3] Without using the adhesive aid composition obtained in Preparation Example 1-1, a support substrate on which the substrate on the carrier side has not formed an adhesive aid coating layer was used, and otherwise a laminate was obtained by the same method as in Example 1-1.

[0365] [4] Evaluation of adhesiveness The obtained laminate was used to confirm the condition of the residue after peeling. Specifically, it was confirmed whether there was a film on the wafer on the carrier side (support substrate side) and the wafer on the device side (semiconductor substrate side) after the support substrate and semiconductor substrate were peeled off using the peeling device Y. As a result, for the laminates of Examples 1-1, 1-2, 1-3, and 1-4, no film was found on the wafer on the device side, but an adhesive layer film remained on the wafer on the carrier side. In contrast, for the laminates of Comparative Examples 1-1, 1-2, and 1-3, an adhesive layer film was found on the wafer on the device side.

[0366] Thus, it can be confirmed that when using the primer film forming composition (adhesive aid composition) of the present invention, the adhesive force of the adhesive composition is improved, and interfacial peeling occurs on the device side (semiconductor substrate side) opposite to the support substrate on which the primer film forming composition (adhesive aid composition) is coated. After the laminate is peeled off, the film of the adhesive composition remains on the support substrate side coated with the primer film forming composition (adhesive aid composition).

[0367] Based on the above results, by selecting to place the primer film on either the support substrate side or the semiconductor substrate or electronic device substrate side, the peeling location (peeling interface) can be controlled when the support substrate is peeled from the semiconductor substrate or electronic device substrate.

[0368] Explanation of reference numerals in the attached figures 1: Semiconductor substrate; 2: Adhesive layer; 2a: Adhesive coating layer; 3: Primer film; 4: Support substrate; 21: Semiconductor chip substrate; 22: Adhesive layer; 22a: Adhesive coating layer; 23: Primer film; 24: Support substrate; 25: Sealing resin; 26: Electronic device substrate.

Claims

1. A primer film forming composition for improving the adhesion between an adhesive layer formed from an adhesive composition containing an adhesive component cured by a hydrosilylation reaction and a substrate. The primer film-forming composition contains components that contribute to the hydrogenation silanization reaction.

2. The composition for forming a primer film according to claim 1, wherein, The primer film-forming composition contains any compound selected from platinum-containing compounds, Si-H-based compounds, and vinyl-containing compounds as components that contribute to the hydrosilylation reaction.

3. The composition for forming a primer film according to claim 1, wherein, The adhesive composition forming the adhesive layer contains the adhesive component and the release agent component.

4. The composition for forming a primer film according to claim 3, wherein, The stripping agent contains polyorganosiloxane.

5. The composition for forming a primer film according to claim 1, wherein, The adhesive component cured by the hydrogenation silanization reaction contains: Composition A-1 has an alkenyl group with 2 to 40 carbon atoms bonded to silicon atoms; Component A-2 containing Si-H groups; and Platinum group metal catalyst A-3.

6. A laminated body having: support base plate; Semiconductor substrates or electronic device substrates; as well as An adhesive layer disposed between the semiconductor substrate or the electronic device substrate and the support substrate. A primer film is formed on the surface of any one of the following substrates: the semiconductor substrate, the electronic device substrate, and the support substrate. The primer film is a primer film formed from the primer film forming composition as described in any one of claims 1 to 5.

7. The laminate according to claim 6, wherein, The primer film is formed on the surface of the support substrate.

8. A method for manufacturing a laminated body, wherein, The laminate has: support base plate; Semiconductor substrates or electronic device substrates; An adhesive layer disposed between the semiconductor substrate or the electronic device substrate and the support substrate; as well as A primer film formed on the surface of any substrate among the semiconductor substrate, the electronic device substrate, and the support substrate. The method for manufacturing the laminate includes a step of forming a primer film by coating the surface of any one of the semiconductor substrate, the electronic device substrate, and the support substrate with a primer film forming composition as described in any one of claims 1 to 5.

9. The method for manufacturing a laminate according to claim 8, wherein, The method for manufacturing the laminate further includes: The process of applying an adhesive composition for forming the adhesive layer to any substrate among the semiconductor substrate, the electronic device substrate, and the support substrate that has not formed the primer film; The process of bonding a substrate with the primer film to a substrate coated with the adhesive composition, and then performing a heat treatment, thereby forming an adhesive layer between the semiconductor substrate or the electronic device substrate and the support substrate.

10. The method for manufacturing a laminate according to claim 9, wherein, The method for manufacturing the laminate includes: A process of forming a primer film by coating the surface of a support substrate with the primer film forming composition as described in any one of claims 1 to 5; A process of coating a semiconductor substrate or electronic device substrate with an adhesive composition for forming an adhesive layer; The process of bonding the support substrate with the primer film formed thereon to the semiconductor substrate or the electronic device substrate coated with the adhesive composition, and then performing a heat treatment, thereby forming an adhesive layer between the semiconductor substrate or the electronic device substrate and the support substrate.

11. A method for manufacturing a processed semiconductor substrate or electronic device substrate, wherein, include: The fifth step involves processing the semiconductor substrate or the electronic device substrate of the laminate as described in claim 6; as well as The sixth step involves separating the semiconductor substrate or electronic device substrate, which has been processed in the fifth step, from the support substrate.

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