Plasma source and substrate processing apparatus

Abstract

According to one aspect of the present invention, a plasma source includes: a reaction body, formed by combining multiple body portions, wherein a gas diffusion space is formed inside the body portions, and at least one insulating portion is formed between the multiple body portions, and the gas diffusion spaces within the multiple body portions are interconnected to form a closed-loop shape and an annular channel for activating process gas; a magnetic core portion, formed to surround at least a portion of the body portion; and a winding portion, receiving power from a power supply portion to induce magnetic force within the magnetic core portion. The body portions include: an inner wall portion constituting the gas diffusion space; and a porous support portion formed on the outer side of the inner wall portion to facilitate heat transfer between the interior and exterior of the body portion; wherein the inner surface of the gas diffusion space in the body portion is formed to have mutually continuous surfaces, and the porous support portion can be formed continuously on the inner wall portion without boundary lines.

Description

Technical Field

[0001] This invention relates to a semiconductor manufacturing technology, and more specifically, to a plasma source and a substrate processing apparatus utilizing the plasma source. Background Technology

[0002] In substrate processing apparatuses used to form semiconductor devices, research is underway on apparatuses and processes that do not directly generate plasma within the process chamber, but instead utilize an external plasma source, such as a remote plasma generator, to supply activated reactants, such as free radicals, into the process chamber to perform substrate processing. If such a remote plasma generator is used, the desired reactants can be generated and supplied to the process chamber. Since plasma is not directly generated within the process chamber, plasma damage on the substrate can be prevented.

[0003] To reduce the path of free radicals generated in a remote plasma generator to the substrate, a source structure integrating the plasma source into the jet section of the process chamber is being investigated. This structure increases the activation rate of free radicals supplied from the plasma source assembly to the substrate, thereby improving process efficiency.

[0004] In addition, cooling structures are being studied to improve the plasma efficiency of this plasma source. Summary of the Invention

[0005] The problem to be solved The present invention addresses the aforementioned problems. According to one technical objective of the present invention, a plasma source and a substrate processing apparatus using the same are provided. The temperature of the plasma source is controlled by forming a main body with a structure that can increase the external area of ​​the plasma source, thereby improving the process efficiency when processing the substrate.

[0006] However, this subject matter is exemplary and should not be construed as limiting the scope of the invention.

[0007] Problem-solving methods To address the aforementioned technical problem of the present invention, a plasma source according to one aspect of the present invention comprises: a reaction body, formed by combining multiple body portions, wherein a gas diffusion space is formed inside the body portions, and at least one insulating portion is formed between the multiple body portions, and the gas diffusion spaces within the multiple body portions are interconnected to form a closed-loop shape and activate annular channels for process gases; a magnetic core portion, formed to surround at least a portion of the body portion; and a winding portion, configured to wind the magnetic core portion and receive power from a power supply portion to induce magnetic force within the magnetic core portion; the body portion includes: an inner wall portion constituting the gas diffusion space; and a porous support portion formed on the outer side of the inner wall portion to facilitate heat transfer between the interior and exterior of the body portion; in the body portion, the inner surface of the gas diffusion space is formed to have mutually continuous surfaces, and the porous support portions are formed continuously on the inner wall portion without boundary lines.

[0008] According to a portion of the present invention, the porous support portion may be formed to surround at least a portion of the inner wall portion.

[0009] According to a portion of the embodiments of the present invention, the main body portion may include a cooling medium flow portion formed in the inner wall portion for flowing cooling medium for cooling the heat inside the main body portion.

[0010] According to a portion of the present invention, the main body portion can be integrally formed from a single component, so that the inner wall portion, the cooling medium flow portion, and the porous support portion are continuous with no boundary lines between them.

[0011] According to a portion of the present invention, the porous support is formed to at least surround a portion of the inner wall portion, and the cooling medium flow portion may be formed in other portions of the inner wall portion exposed from the porous support.

[0012] According to a partial embodiment of the present invention, a refrigerant inlet and a refrigerant outlet may be formed in the main body portion, the refrigerant inlet being connected to one end of the cooling medium flow portion, and the refrigerant outlet being connected to the other end of the cooling medium flow portion.

[0013] According to a portion of the present invention, the main body portion is formed by a first region having a first height and a first width and a second region having a second height and a second width; the first height is greater than the second height, the first width is greater than the second width, and the magnetic core portion may be configured to surround the second region of the main body portion.

[0014] According to a portion of the embodiments of the present invention, the main body includes a cooling medium flow portion formed in the inner wall portion to allow cooling medium for cooling the interior of the main body to flow; at least a portion of the cooling medium flow portion may be formed in the first region.

[0015] According to a portion of the present invention, the main body includes a cooling medium flow portion formed in the inner wall portion to allow cooling medium for cooling the interior of the main body to flow; at least another portion of the cooling medium flow portion may be formed in the second region.

[0016] According to a portion of an embodiment of the present invention, at least a portion of the porous support portion may be formed in the first region.

[0017] According to a portion of an embodiment of the invention, at least another portion of the porous support may be formed in the second region.

[0018] According to a partial embodiment of the present invention, at least a portion of the porous support portion is formed to have a first density in the first region; at least another portion of the porous support portion is formed to have a second density in the second region; and the second density may be greater than the first density so that at least another portion of the porous support portion can support the magnetic core portion in the second region.

[0019] According to a portion of an embodiment of the present invention, at least a portion of the porous support is formed to have a first porosity in the first region; at least another portion of the porous support is formed to have a second porosity in the second region; and the second porosity may be greater than the first porosity so that the second region can be cooled more quickly than the first region.

[0020] According to a portion of the present invention, at least one air intake portion is formed on the upper or side portion of the main body portion; at least one opening portion may be formed on the lower portion of the main body portion.

[0021] According to a portion of the embodiments of the present invention, the plasma source may include an exhaust plate forming a plurality of exhaust ports to allow process gases activated in the reaction body to be discharged to the lower portion, and combined with the lower portion of the reaction body such that the exhaust ports communicate with the at least one opening.

[0022] According to some embodiments of the present invention, the exhaust plate may be formed of an insulating material.

[0023] According to a portion of the embodiments of the present invention, a source insulation component may be incorporated between the reaction body and the exhaust plate.

[0024] To address the aforementioned technical problem of the present invention, a substrate processing apparatus according to one aspect of the present invention may include: a process chamber forming a reaction space inside; a substrate support portion attached to the lower part of the process chamber to support the substrate within the reaction space; a plasma source assembly attached to the upper part of the process chamber and configured with one or more plasma sources according to any one of claims 1 to 15; and a gas injection portion disposed opposite to the substrate support portion and below the plasma source assembly, having a gas injection plate formed thereon for injecting process gas activated by the plasma source assembly onto the substrate support portion; the plasma source assembly includes: an exhaust plate forming an exhaust port portion to allow the process gas to be discharged to the lower part; a first plasma source attached to the exhaust plate; and a second plasma source disposed on the outer side spaced apart from the first plasma source and attached to the exhaust plate; a first opening portion disposed in the first plasma source to discharge process gas activated by the first plasma source; and a second opening portion disposed in the second plasma source to discharge process gas activated by the second plasma source.

[0025] The effects of the invention According to a partial embodiment of the present invention configured as described above, a plasma source and substrate processing apparatus are provided in the plasma source with a porous support portion to effectively cool the main body portion, thereby reducing thermal damage and plasma damage, and thereby improving the process stability and process efficiency during substrate processing.

[0026] Furthermore, by forming the main body of the plasma source into a single unit, it is possible to freely manufacture a shape that easily maintains the plasma. Since there are no fastening surfaces within the main body, the risk of leakage and air leakage at the boundary surfaces due to fastening is prevented, and the time and cost of replacement and maintenance caused by deformation of sealing components are reduced. Of course, this effect should not limit the scope of the invention. Attached Figure Description

[0027] Figure 1 This is a schematic diagram illustrating a plasma source according to an embodiment of the present invention.

[0028] Figure 2 It is shown Figure 1 A schematic three-dimensional diagram of the plasma source.

[0029] Figure 3 It is shown Figure 1 A schematic diagram of power transmission in a plasma source.

[0030] Figure 4 It is shown Figure 1 A schematic three-dimensional diagram of a portion of the structure of the reaction host in the plasma source.

[0031] Figure 5 It is shown Figure 4 A cross-sectional view of the l-l' section in the plasma source.

[0032] Figure 6 It is shown Figure 4 A cross-sectional view of the m-m' section in the plasma source.

[0033] Figure 7 It is shown Figure 4 A cross-sectional view of the n-n' section in the plasma source.

[0034] Figure 8 This is a schematic perspective view showing a portion of the structure of the reaction body in a plasma source according to another embodiment of the present invention.

[0035] Figure 9 It is shown Figure 8 A cross-sectional view of the o-o' section in the plasma source.

[0036] Figure 10 It is shown Figure 8 A cross-sectional view of the p-p' section in the plasma source.

[0037] Figure 11 This is a schematic perspective view showing a portion of the structure of a reaction body according to another embodiment of the present invention.

[0038] Figure 12 It is shown Figure 11 A cross-sectional view of the q-q' section in the plasma source.

[0039] Figure 13 It is shown Figure 11 A cross-sectional view of the r-r' section in the plasma source.

[0040] Figure 14 It is shown Figure 11 A cross-sectional view of the s-s' section in the plasma source.

[0041] Figure 15 This is a schematic perspective view showing a portion of the structure of the reaction body in a plasma source according to another embodiment of the present invention.

[0042] Figure 16 It is shown Figure 15 A cross-sectional view of the t-t' section in the plasma source.

[0043] Figure 17 It is shown Figure 15 A cross-sectional view of the u-u' section in the plasma source.

[0044] Figure 18This is a top view showing the exhaust plate of a plasma source according to a partial embodiment of the present invention.

[0045] Figures 19 to 21 This is a schematic perspective view showing a cut-off portion of a plasma source according to various embodiments of the present invention.

[0046] Figure 22 and Figure 23 This is a schematic perspective view showing a substrate processing apparatus according to various embodiments of the present invention.

[0047] Figure 24 This is a schematic cross-sectional view illustrating a substrate processing apparatus according to a partial embodiment of the present invention.

[0048] Figure 25 This is a schematic perspective view illustrating a plasma source assembly of a substrate processing apparatus according to a partial embodiment of the present invention. Detailed Implementation

[0049] Hereinafter, preferred embodiments of the present invention will be described in detail with reference to the accompanying drawings.

[0050] The embodiments of the present invention are provided to more fully illustrate the invention to those skilled in the art. The following embodiments can be modified in various different ways, and the scope of the invention is not limited to the following embodiments. Rather, these embodiments are provided to enrich and complete the invention and to fully convey the spirit of the invention to those skilled in the art.

[0051] Furthermore, for ease of explanation and clarity, the thickness or size of each layer is exaggerated in the accompanying drawings. Moreover, embodiments of the present invention should not be interpreted as limited to the specific shape of the area shown in the invention, but should include, for example, shape variations that occur during the manufacturing process.

[0052] Figure 1 This is a schematic diagram illustrating a plasma source according to an embodiment of the present invention; Figure 2 It is shown Figure 1 A schematic three-dimensional diagram of the plasma source; Figure 3 It is shown Figure 1 A schematic diagram of power transmission in a plasma source; Figure 4 It is shown Figure 1 A schematic three-dimensional diagram of a portion of the structure of the reaction host in the plasma source; Figure 5 , Figure 6 and Figure 7 They are shown separately. Figure 4 Cross-sectional views of the l-l', m-m' and n-n' sections in the plasma source.

[0053] Reference Figures 1 to 7According to an embodiment of the present invention, a plasma source may include: a reaction body 210, a magnetic core 220, and a winding 230.

[0054] The reaction body 210 may include a main body portion 211 and an insulating portion 216. Gas diffusion spaces 214 may be formed inside the main body portion 211.

[0055] According to some embodiments, the reaction body 210 may be formed by combining multiple body parts 211, which are formed from a single component so that the inner surface of the gas diffusion space 214 has a continuous surface.

[0056] Specifically, a first gas diffusion space 214a is formed inside the first main body 211a, a second gas diffusion space 214b is formed inside the second main body 211b, and a third gas diffusion space 214c can be formed inside the third main body 211c. The cross-sectional shape of the gas diffusion space 214 can be various shapes such as circular or elliptical. In this case, the gas diffusion space 214 can be an annular channel.

[0057] The annular channel is designed to activate the process gas within it, and its width and thickness can be increased or widened according to the temperature rise as the activated process gas diffuses.

[0058] In some embodiments, the main body 211 may be formed by coating an insulating material onto a conductive material. For example, the main body 211 may be formed by coating an insulating material, such as a metal oxide or a metal nitride, onto a metal.

[0059] In some embodiments, at least one air inlet 213 is formed on the upper or side of the main body 211 for introducing gas into the annular channel, and at least one opening 215 for discharging gas may be formed on the lower part of the main body 211.

[0060] The reaction body 210 is formed by combining multiple interconnected body parts to form one or more insulating parts 216.

[0061] The insulating portion 216 may be incorporated between the main body portions 211. The insulating portion 216 is not directly electrically connected to the main body portions 211, but rather is inserted between the two main body portions 211 to achieve mutual spacing. For example, a flow path may be formed inside the insulating portion 216 to allow the gas diffusion spaces 214 within the main body portions 211 to communicate with each other. The insulating portion 216 may be formed using a suitable insulating material, such as oxides, nitrides, or polymer resins.

[0062] In some embodiments, the reaction body 210 comprises multiple interconnected gas diffusion spaces 214 within its main body portions, forming a closed-loop shape and an annular channel capable of activating the process gas. More specifically, the main body portions 211 are respectively configured to correspond to structures that segment the overall shape of the annular channel, thereby defining the annular channel as a whole. For example, when the annular channel is formed into a circular shape, the main body portions 211 may correspond to structures that divide this donut shape into multiple segments.

[0063] The magnetic core portion 220 may be formed to surround at least a portion of the main body portion 211.

[0064] The magnetic core portions 220 are arranged at intervals around each other while surrounding the reaction body 210 along an annular channel. For example, the magnetic core portions 220 may be arranged on the body portion 211. More specifically, the first magnetic core 220a is arranged to surround the outer peripheral surface of the first body portion 211a, the second magnetic core 220b is arranged to surround the outer peripheral surface of the second body portion 211b, and the third magnetic core 220c may be arranged to surround the outer peripheral surface of the third body portion 211c. For example, the magnetic core portions 220 may contain a magnetic material, such as ferrite material.

[0065] In some embodiments, the magnetic core portion 220 is formed as a single closed structure or may have a structure combining multiple segmented portions.

[0066] The winding section 230 is configured to wind the magnetic core section 220 and receives power from the power supply section 200, and can induce magnetic force within the magnetic core section 220. For example, the first winding 230a is configured to wind the first magnetic core 220a, the second winding 230b is configured to wind the second magnetic core 220b, and the third winding 230c can be configured to wind the third magnetic core 220c.

[0067] The winding section 230 receives power from the power supply section 400 and can induce magnetic force within the magnetic core section 220. For example, when the winding section 230 is wound in the width direction of the magnetic core section 220, if power is supplied to the winding section 230, magnetic force can be induced in the circumferential direction within the magnetic core section 220.

[0068] The power supply unit 400 may include a power supply device that can supply RF power to the winding unit 230 via a resonant circuit unit or the like (not shown). For example, the power supply unit 400 may include a switch-mode power supply (SMPS).

[0069] In the plasma source, the number of main body portions 211 is exemplary, and two or more may be selected. Furthermore, the number of magnetic core portions 220, winding portions 230, and insulating portions 216 can be varied depending on the number of main body portions 211.

[0070] In some embodiments, the main body 211 can be divided into a first region 2115 and a second region 2116.

[0071] For example, such as Figure 4 As shown, the first region 2115 has a first height H1 and a first width W1, and the second region 2116 may have a second height H2 and a second width W2. The first height H1 is greater than the second height H2, and the first width W1 may be greater than the second width W2.

[0072] To illustrate more specifically, the cross-sectional area of ​​the second region 2116 can be smaller than that of the first region 2115. Therefore, the process gas flowing in the gas diffusion space 214 formed inside the second region 2116 of the magnetic core 220 is faster than the process gas flowing in the gas diffusion space 214 formed inside the first region 2115. This guides the gas to flow smoothly throughout the gas diffusion space 214, increasing the activation rate of the process gas and thus improving the activation speed.

[0073] For example, the first height H1 is 1.1 to 1.4 times larger than the second height H2, and the first width W1 is 1.1 to 1.4 times larger than the second width W2.

[0074] The second region 2116 of the main body 211 is smaller in width and height than the first region 2115, so that the magnetic core 220 can be combined in the second region 2116.

[0075] A flange 217 may be formed at the end of the main body portion 211. For example, insulating portions 216 may be attached to both sides of the main body portion 211 to separate it from other main body portions. That is, by attaching the insulating portion 216 to the flange 217 formed at one end of the main body portion 211 and attaching it to the other end of the other main body portion, an insulating portion 216 may be provided between the main body portion 211 and the other main body portions.

[0076] In some embodiments, at least one air inlet 213 is formed in the upper part of the first region 2115, and at least one opening 215 may be formed in the lower part of the first region 2115. The process gas flowing into the gas diffusion space 214 through the air inlet 213 is activated by the plasma and can be discharged to the lower part of the plasma source through the opening 215. For example, the opening 215 may be formed in the shape of a slot.

[0077] In some embodiments, the air intake 213 may also be formed on the side of the first region 2115.

[0078] According to some embodiments of the present invention, such as Figure 4 As shown, the plasma source 200 may include a sensor unit 250.

[0079] The sensor unit 250 may include a sensor for measuring the reaction of the process gas formed in the gas diffusion space 214, i.e., plasma. For example, the sensor unit 250 may be a photosensitive sensor for plasma measurement.

[0080] The main body 211 may include an inner wall portion 218 and a porous support portion 219. A gas diffusion space 214 is formed in the inner wall portion 218, and the porous support portion 219 may be formed on the outer side of the inner wall portion 218, so that heat inside the main body 211 can be transferred to the outside of the main body 211.

[0081] For example, such as Figures 4 to 7 As shown, a gas diffusion space 214 may be formed in the inner wall portion 218 of the main body portion 211, the gas diffusion space 214 being used for the flow of process gas inside the main body portion 211. Further, the inner wall portion 218 may have a tube shape with a predetermined thickness, so that the process gas flows only in the gas diffusion space 214.

[0082] At this time, the cross-section of the inner wall portion 218 in the horizontally spanning inner wall portion 218 can form a continuous surface.

[0083] The main body 211 can be formed by a first region 2115 and a second region 2116. The first region 2115 and the second region 2116 can be formed as a single unit and can be freely deformed in shape or size.

[0084] For example, such as Figure 4 As shown, the external shape or size of the first region 2115 and the second region 2116 of the magnetic core 220 may be different from each other. The gas diffusion space 214 inside the first region 2115 and the second region 2116 forms different cross-sectional areas. Therefore, the first region 2115 and the second region 2116 may form different internal shapes or sizes.

[0085] At this time, the first region 2115 and the second region 2116 of the main body 211 are formed as a single unit, and fastening surfaces or fastening parts for joining are not required. That is, as shown... Figure 5 and Figure 6 As shown, in a cross-sectional view perpendicularly cut along the gas diffusion space 214 of the main body 211, the first region 2115 and the second region 2116 are distinguished by the combination of the magnetic core 220 and the flange 217, and do not form a separate boundary surface.

[0086] In particular, the surface of the inner wall of the gas diffusion space 214 surrounding the process gas does not form a boundary or cross-section that distinguishes the first region 2115 from the second region 2116.

[0087] That is, in a cross-section where the main body 211 is cut horizontally or vertically along the gas diffusion space 214, the inner wall 218 can be formed as an integral shape without a cut boundary surface. For example, the main body 211 is formed using 3D printing and its shape or size can be freely changed.

[0088] Therefore, there is no need to use O-rings or other sealing parts for connecting the first region 2115 and the second region 2116 of the main body 211, thus preventing deformation of the sealing parts or leakage at the joint due to high temperature in the gas diffusion space 214.

[0089] In addition, since there is no fastening part, no boundary surface is formed on the inner wall surrounding the gas diffusion space 214 formed inside the main body 211, so the flow of process gas is more uniform, preventing the generation of particles at the boundary surface, and the absence of fastening part can reduce the volume or increase the area of ​​the gas diffusion space 214.

[0090] In addition, since no separate fasteners are formed, the thickness of the inner wall can be reduced, and the heating area can be expanded within a limited volume, increasing the plasma generation area and reducing the overall volume while maintaining the same level of cooling performance.

[0091] A porous support portion 219 may be formed on the outer side of the inner wall portion 218 so that heat from the interior of the main body portion 211, for example, the inner wall portion 218, can be transferred to the exterior of the main body portion 211.

[0092] The porous support portion 219 can be formed continuously on the inner wall portion 218 without boundary lines.

[0093] The porous support portion 219 can be formed to at least partially surround the inner wall portion 218, and can be formed on the main body portion 211, for example, on any part of the upper, side, or lower portion, preferably on the upper and side portions. From the perspective of having a heat dissipation function, the porous support portion 219 can also be called a porous heat dissipation portion.

[0094] For example, the porous support portion 219 forms the outside of the main body portion 211, holds the reaction body 210, and forms regular or irregular shaped pores through which fluid, especially air or gas, can move.

[0095] The porous support portion 219 has a large pore volume and forms a large surface area. Accordingly, the high temperature of the main body portion 211 generated by the activation process gas in the annular channel can be released to the outside of the main body portion 211 through the large surface area of ​​the porous support portion 219. In this way, the high temperature of the main body portion 211 can be prevented from being overheated.

[0096] At this point, the porous support 219 will not lose strength as the porosity increases, but will have sufficient mechanical strength.

[0097] The porous support portion 219 can prevent the main body portion 211 from heating up at specific locations along with the plasma generation and diffusion area. For example, the porosity of the porous support portion 219 can increase the surface area as the temperature of the main body portion 211 increases, and can be freely varied according to the shape of the reaction body 210.

[0098] The porous support 219 is formed by natural convection cooling, in which air flows into the pores formed in the porous support 219.

[0099] Figure 8 This is a schematic perspective view showing a portion of the structure of the reaction body in a plasma source according to another embodiment of the present invention; Figure 9 and Figure 10 It is shown Figure 8 Cross-sectional view of the o-o' and p-p' sections in the plasma source.

[0100] According to some embodiments, at least a portion of the porous support 219 may be formed in the first region 2115. For example, at least a portion of the porous support 219 may be formed to at least partially surround the periphery of the first region 2115.

[0101] According to some embodiments, at least another portion of the porous support 219 may be formed in the second region 2116. For example, at least another portion of the porous support 219 may be formed to at least partially surround the periphery of the second region 2116.

[0102] For example, a porous support portion 219 may be formed in a second region 2116, where a magnetic core portion 220 is formed, and an insulating portion 216 is combined for plasma ignition. That is, the porous support portion 219 is formed to surround the gas diffusion space 214 in the second region 2116, and the magnetic core portion 220 may be combined on the outside of the porous support portion 219.

[0103] According to some embodiments, at least a portion of the porous support portion 219 is formed to have a first density and a first porosity in a first region 2115, while at least another portion of the porous support portion 219 may be formed to have a second density and a second porosity in a second region 2116.

[0104] In this case, porous support portions 219 can be formed in all areas of the main body portion 211, thereby reducing the temperature transmitted to the magnetic core portion 220 and reducing the contact surface between the magnetic core portion 220 and the reaction body 210, thereby reducing heat transfer.

[0105] In some embodiments, in order to support the magnetic core portion 220 in the second region 2116, the second density of the porous support portion 219 surrounding the periphery of the second region 2116 may be greater than the first density of the porous support portion 219 surrounding the periphery of the first region 2115.

[0106] For example, the porous support portion 219 formed in the second region 2116 not only needs to release the heat generated by the gas diffusion space 214 on the inner side, but also needs to provide sufficient support for the magnetic core portion 220 attached to the outer side. Accordingly, the porous support portion 219 formed in the second region 2116 can be configured with a second density that maximizes heat dissipation while maintaining the rigidity of the main body portion 211. That is, the second density of the porous support portion 219 formed in the second region 2116 can be greater than the first density of the porous support portion 219 formed in the first region 2115 for maximizing heat dissipation. Here, the density refers to a value representing mass based on the total volume of the material constituting the porous support portion 219.

[0107] In some embodiments, the second porosity of the porous support portion 219 formed in the second region 2116 may be greater than the first porosity of the porous support portion 219 formed in the first region 2115.

[0108] Since the second porosity is greater than the first porosity, the volume or surface area of ​​the pores in the porous support portion 219 formed in the second region 2116 is greater than that in the first region 2115, so the second region 2116 can be cooled more quickly than the first region 2115.

[0109] More specifically, the porous support 219 allows for a larger surface area per unit area exposed to the outside in the second region 2116 compared to the first region 2115, thereby increasing the area in the second region 2116 that is in contact with air, and thus allowing the second region 2116 to be cooled more quickly than the first region 2115.

[0110] For example, ignition for activating the process gas can occur in the gas diffusion space 214 inside the second region 2116, releasing high-temperature heat. At this time, the porous support portion 219 formed in the second region 2116 minimizes heat transfer to the magnetic core portion 220 attached to the main body portion 211, thereby maintaining the magnetic core characteristics.

[0111] According to various embodiments of the present invention, the heat generated in the gas diffusion space 214 is transferred to the porous support portion 219 through the inner wall portion 218 of the main body portion 211, and a rapid heat transfer occurs from the porous support portion 219 to the outside of the main body portion 211, thereby rapidly reducing the temperature of the reaction body 210. Accordingly, heat diffusion from the reaction body 210 to the outside can be prevented, and heat transfer to the magnetic core portion 220 can be suppressed, thereby preventing magnetic core deterioration.

[0112] Figure 11 This is a schematic perspective view showing a portion of the structure of a reaction body according to another embodiment of the present invention; Figure 12 , Figure 13 and Figure 14 It is shown Figure 11 Cross-sectional views of the q-q', r-r' and s-s' sections in the plasma source; Figure 15 This is a schematic perspective view showing a portion of the structure of the reaction body in a plasma source according to another embodiment of the present invention; Figure 16 and Figure 17 It is shown Figure 15 Cross-sectional views of the t-t' and u-u' sections in the plasma source.

[0113] The main body 211 may include an inner wall portion 218, a cooling medium flow portion 2183, and a porous support portion 219. A gas diffusion space 214 is formed in the inner wall portion 218, and the porous support portion 219 may be formed on the outer side of the inner wall portion 218 to transfer heat from the inside of the main body 211 to the outside of the main body 211.

[0114] For example, such as Figures 12 to 14 As shown, a gas diffusion space 214 may be formed in the inner wall portion 218 of the main body portion 211 for the flow of process gas inside the main body portion 211. Furthermore, the inner wall portion 218 may have a tube shape with a predetermined thickness so that the process gas can flow only in the gas diffusion space 214.

[0115] The main body 211 having the gas diffusion space 214 can be configured such that the inner surfaces of the gas diffusion space 214 have continuous surfaces.

[0116] For example, the inner surface of the main body 211 can be formed as a continuous surface from one side of the main body 211 to the other side. Specifically, the main body 211 can be formed by a first region 2115 and a second region 2116, and the first region 2115 and the second region 2116 can be formed as a single unit.

[0117] For example, such as Figure 11As shown, the external shape or size of the first region 2115 and the second region 2116 of the magnetic core 220 are different from each other, and the cross-sectional area of ​​the gas diffusion space 214 inside the first region 2115 and the second region 2116 is formed to be different from each other, so the internal shape or size of the first region 2115 and the second region 2116 can be different from each other.

[0118] The internal flow path of the cooling medium flow section 240 has no fasteners or joints, forming a continuous surface, allowing the cooling medium to circulate smoothly within the cooling medium flow section 240.

[0119] At this time, the main body 211 can be understood as the connection between the first region 2115 and the second region 2116 being continuously formed so that the inner surface of the gas diffusion space 214 has a continuous surface; for example, the main body 211 can be formed as a single piece, or the main body 211 can also be formed as a continuous surface on the inner surface of the gas diffusion space 214, while a part of the inner wall 218, such as a part of the cooling medium flow section 240, can be formed separately for combination.

[0120] Reference Figures 11 to 14 In order to allow the flow of cooling medium for the heat inside the cooling body 211, a cooling medium flow section 2183 may be formed in the inner wall section 218.

[0121] The cooling medium flow section 2183 is shaped to surround the gas diffusion space 214, allowing the cooling medium to flow around the gas diffusion space 214. This shape allows it to be integrally formed with the main body 211 inside the main body 211. The cooling medium can be circulated through the cooling medium flow section 2183, thereby cooling the reaction body 210.

[0122] For example, the cooling medium flow section 2183 may be formed in the main body 211 in a shape that at least surrounds a portion of the gas diffusion space 214. For example, it may be formed in any part or more of the upper, side, and lower portions of the gas diffusion space 214 inside the main body 211. Preferably, cooling flow paths may be formed in the upper and side portions.

[0123] More specifically, a cooling medium flow section 2183 can be formed on the inner side of the main body 211, where the cooling medium flows along the inner wall surrounding the gas diffusion space 214. At this time, as... Figure 14 As shown, the cooling medium flow section 2183 can be formed on the upper and side sections of the unopened section 215, with the direction from the main body section 211 toward the gas diffusion space 214 as the reference.

[0124] The cooling medium flow section 2183 is formed by bending the surrounding part of the gas diffusion space 214 multiple times in order to make the cooling medium flow for as long a time and over as long a distance as possible.

[0125] According to some embodiments, such as Figure 11 As shown, the cooling medium flow section 2183 inside the main body 211 can be formed in the periphery of the gas diffusion space 214 in the first region 2115. Therefore, the gas is activated in the annular channel, while preventing the first region 2115 of the main body 211 from overheating.

[0126] According to some embodiments, at least a portion of the cooling medium flow section 2183 may be formed in the first region 2115 to at least surround a portion of the gas diffusion space 214.

[0127] According to some embodiments, at least a portion of the cooling medium flow section 2183 may be formed in the second region 2116 to at least surround a portion of the gas diffusion space 214.

[0128] According to some embodiments, at least a portion of the cooling medium flow section 240 is formed in the first region 2115, while at least another portion of the cooling medium flow section 240 may be formed in the second region 2116.

[0129] For example, a cooling medium flow section 2183 may be formed in the periphery of a second region 2116, which forms the magnetic core section 220 and is combined with an insulating section 216 for plasma ignition. Accordingly, a cooling medium can flow in all regions of the main body section 211, and heat release to the outside and heat transfer to the magnetic core section 220 due to the heating of the main body section 211 can be prevented.

[0130] The cooling medium flow section 2183 can prevent the main body section 211 from generating high temperatures at specific locations along with the plasma generation and diffusion area.

[0131] For example, the thickness and width of the flow path of the cooling medium flow section 2183 increase or widen as the temperature of the plasma increases, thereby increasing the contact area with the cooling medium and improving the heat transfer efficiency of the cooling medium.

[0132] Alternatively, by reducing the cross-sectional area of ​​the flow path of the cooling medium flow section 128 and increasing the flow rate of the cooling medium flowing in the flow path, the cooling speed can be improved. This can be freely varied according to the shape of the reaction body 210.

[0133] For example, the cooling medium flow section 2183 can be configured such that the width of the cooling medium flow becomes narrower as it moves away from the magnetic core section 220. For example, as Figure 12 and Figure 13 As shown, the flow path width of the cooling medium flow section 2183 can be gradually narrowed in the direction away from the second region 2116 of the magnetic core section 220.

[0134] A first magnetic core 220a and a first insulating portion 216a are joined on one side of the first main body portion 211a, and a second magnetic core 220b and a second insulating portion 216b, which are joined to the second main body portion 211b, can be joined on the other side of the first main body portion 211a. That is, the magnetic core portion 220 and the insulating portion 216 can be joined on both sides of the main body portion 211.

[0135] Accordingly, the point furthest from the core portion 220 in the main body 211 can be the center of the main body 211, and the cooling medium flow section 2183 can be configured such that the width of the cooling medium flow narrows as it moves towards the center of the main body 211. This increases the cross-sectional area of ​​the flow path of the cooling medium flow section 2183 near the core portion 220, improves the heat transfer efficiency of the cooling medium, and thus prevents heat transfer to the core portion 220.

[0136] In addition, such as Figure 16 As shown, the fourth width W4 of the cooling medium flow section 2183, which is formed to surround the periphery of the second region 2116, can be greater than the third width W3 of the cooling medium flow section 2183, which is formed to surround the periphery of the first region 2115.

[0137] Therefore, when the temperature in the second region 2116 of the main body 211 is higher than that in the first region 2115, the width of the cooling medium flow section 2183 formed in the second region 2116 is increased, thereby increasing the cross-sectional area of ​​the flow path, increasing the flow rate of the cooling medium, and improving the heat transfer efficiency of the cooling medium. Thus, heat release in the second region 2116 and heat transfer to the magnetic core 220 can be prevented.

[0138] Alternatively, the fourth width W4 of the cooling medium flow section 2183 formed in the second region 2116 can be narrowed to increase the flow rate in the cooling medium flow section 2183 formed in the second region 2116, thereby preventing the heat released in the second region 2116 from being transferred to the magnetic core section 220.

[0139] Furthermore, although not shown, when the temperature in the first region 2115 of the main body 211 is higher than that in the second region 2116, the width of the cooling medium flow section 2183 formed in the first region 2115 can be different from the width of the cooling medium flow section 2183 formed in the second region 2116, so that it can be formed to be narrower or wider.

[0140] According to some embodiments, the cooling medium flow section 2183 is formed such that the width of the cooling medium flow narrows as it moves closer to the magnetic core section 220, thereby increasing the flow rate of the cooling medium and thus increasing the cooling speed. Moreover, it is not limited to this, but can be freely varied according to the shape of the reaction body 210.

[0141] In some embodiments, the cooling medium flow section 2183 may be integrally formed with the main body 211 so that the cooling medium can flow around the gas diffusion space 214.

[0142] In some embodiments, the cooling medium flow section 2183 may be formed in a groove shape in a portion of the main body 211. Specifically, the cooling medium flow section 2183 may be formed as a flow path groove patterned into a predetermined shape.

[0143] For example, the cooling medium flow section 2183 can be formed by excavating a groove in the shape of a flow path on the upper wall of at least one of the first region 2115 and the second region 2116 through a processing technology.

[0144] In this case, the cooling medium flow section 2183 may be formed in a region other than the portion where the porous support section 219 is formed. The cooling medium flow section 2183 may include a cooling groove and a cover. The cooling groove is formed as a recess on the upper wall of the main body section 211, and the cover covers the cooling groove.

[0145] Cooling medium flow section 2183 is formed in at least one wall of first region 2115. Refrigerant inlet 2181 and refrigerant outlet 2182 are formed in first region 2115 respectively. Refrigerant inlet 2181 is connected to one end of cooling medium flow section 2183 and refrigerant outlet 2182 is connected to the other end of cooling medium flow section 2183.

[0146] The cooling medium flow section 2183 is mostly sealed, and the refrigerant inlet 2181 and refrigerant outlet 2182 can be connected to a refrigerant supply line (not shown).

[0147] The cooling medium may include cooling water.

[0148] As described above, the heat generated in the gas diffusion space 214 is transferred from the cooling medium flow section 2183 to the cooling medium, thereby cooling the main body 211. The porous support section 219 cools the residual heat in the main body 211 or the cooling medium, or delays the temperature rise of the cooling medium, rapidly causing heat transfer to the outside of the main body 211, thereby reducing the temperature of the reaction body 210. In other words, heat diffusion to the outside of the reaction body 210 is prevented, and heat transfer to the core section 220 is suppressed, thereby preventing core degradation.

[0149] According to some embodiments, the main body 211 can be formed as a single component so that the inner wall 218, the cooling medium flow section 2183, and the porous support section 219 are continuous with each other without boundary lines.

[0150] For example, such as Figure 11As shown, a gas diffusion space 214 for flowing process gas is formed inside the main body 211. The gas diffusion space 214 is surrounded by a cooling medium flow section 2183, which can be surrounded by a porous support section 219.

[0151] Specifically, such as Figure 14 As shown, an opening 215 is formed in the lower part of the gas diffusion space 214 for discharging activated process gas downwards into the reaction body 210. Cooling medium flow sections 2183 can be formed in the upper part and both sides of the gas diffusion space 214 to flow a cooling medium for cooling the heat generated in the gas diffusion space 214. That is, the gas diffusion space 214 can be formed in the inner direction of the cooling medium flow section 2183.

[0152] A porous support portion 219 is formed in the direction of the outer side of the cooling medium flow portion 2183. The porous support portion 219 includes a plurality of pores in the area outside the wall for the flow of cooling medium. The heat of the main body portion 211 can be released to the outside of the main body portion 211 through the surface in which the pores are formed.

[0153] According to some embodiments, such as Figure 15 As shown, the main body 211 of the reaction body 210 has a cooling medium flow section 2183 and a porous support section 219 formed in both the first region 2115 and the second region 2116.

[0154] For example, a gas diffusion space 214 for flowing process gas is formed inside the second region 2116 of the main body 211. The gas diffusion space 214 is surrounded by a cooling medium flow section 2183, which can be surrounded by a porous support section 219.

[0155] Specifically, such as Figure 17 As shown, in the second region 2116 of the main body 211, a gas diffusion space 214 is formed at the center of the main body 211, and a cooling medium flow section 2183 can be formed in a shape that surrounds the periphery of the gas diffusion space 214.

[0156] At this time, the cooling medium flow section 2183 can be formed into a spiral shape that surrounds the gas diffusion space 214, and can be formed into various shapes. In order to make the cooling medium flow in the second region 2116 of the main body section 211 along a long path, it can be formed into a repeating flow path shape or a shape that flows from one end to the other around the return point.

[0157] Next, a porous support portion 219 may be formed in the direction of the outer side of the cooling medium flow portion 2183. The porous support portion 219 includes a plurality of pores in the area other than the wall portion for the flow of cooling medium. A magnetic core portion 220 may be attached to the periphery of the porous support portion 219.

[0158] According to a partial embodiment of the present invention, the heat generated in the gas diffusion space 214 is transferred through the main body 211 to the cooling medium flowing in the cooling medium flow section 2183, and more effective cooling can be achieved through the porous support section 219. Accordingly, heat exchange occurs more rapidly, thereby reducing the temperature of the reaction body 210 more quickly. This prevents heat diffusion to the outside of the reaction body 210 and also suppresses heat transfer to the magnetic core section 220, thereby preventing core deterioration.

[0159] According to some embodiments, the porous support portion 219 is formed to at least surround a portion of the inner wall portion 218, and the cooling medium flow portion 2183 may be formed in other portions of the inner wall portion 218 exposed from the porous support portion 219.

[0160] For example, a porous support portion 219 may be formed in the second region 2116 of the main body portion 211, and a cooling medium flow portion 2183 may be formed in the first region 2115 of the main body portion 211.

[0161] Alternatively, a porous support portion 219 may be formed in at least a portion of the first region 2115 in the main body 211, and a cooling medium flow portion 2183 may be formed in at least another portion of the first region 2115 in the main body 211. In this case, the cooling medium flow portion 2183 may be integrally formed with the main body 211, or it may be formed by machining a groove in the form of a flow path on the outside of the main body 211 and combining it with a separate cover portion.

[0162] According to the plasma source, if power is supplied from the power supply unit 400 to the winding unit 230, a magnetic force is induced in the magnetic core unit 220. Through this induced magnetic force, a current can be induced in the annular channel penetrating the interior of the magnetic core unit 220. Through this current, the gas in the annular channel is activated, and a plasma environment can be formed.

[0163] In the plasma source, a magnetic force is induced in the magnetic core section 220 by the current flowing from the winding section 230, and this induced magnetic force induces a current in the annular channel. This structure corresponds to the principle of a transformer. From this perspective, the plasma source can also be called a transformer-coupled plasma (TCP) device or a magnetically induced plasma device.

[0164] In some embodiments, in the transformer structure, the winding portion 230 can function as a primary coil, and through the annular channel defined by the main body portion 211, it can function as a secondary coil. From this perspective, the winding portion 230 can be referred to as a primary coil or primary winding, and the current flowing in the winding portion 230 can be referred to as the primary current. Furthermore, the current induced within the annular channel can also be referred to as the secondary current.

[0165] By combining multiple magnetic cores 220 with the plasma source 200, multiple main body parts 211 can be combined to form plasma stably in the annular channel. Furthermore, by controlling the temperature of the main body parts 211 with the porous support part 219, plasma damage to the reaction body 210 can be reduced.

[0166] Alternatively, the temperature of the main body 211 can be controlled by the cooling medium flow section 2183, thereby reducing plasma damage to the reaction body 210. Furthermore, a porous support section 219 is formed on the outside of the cooling medium flow section 2183, so the temperature of the reaction body 210 can be uniformly controlled as a whole.

[0167] Figure 18 This is a top view showing the exhaust plate of a plasma source according to a partial embodiment of the present invention. Figures 19 to 21 This is a schematic perspective view showing a cut-off portion of a plasma source according to various embodiments of the present invention.

[0168] Reference Figures 18 to 21 According to a portion of the embodiments of the present invention, the plasma source may include an exhaust plate 300.

[0169] The exhaust plate 300 forms an exhaust port 320, which can be attached to the lower part of the reaction body 210, allowing the process gas activated in the reaction body 210 to be discharged to the lower part.

[0170] like Figure 2 and Figure 18 As shown, specifically, the exhaust plate 300 forms a first row of holes 320a, corresponding to a first opening 215a formed below the first main body portion 211a, and forms a second row of holes 320b, corresponding to a second opening 215ba formed below the second main body portion 211b, and can form a third row of holes 320c, corresponding to a third opening 215c formed below the third main body portion 211c.

[0171] The exhaust plate 300 can be formed to directly cover the upper part of the process chamber to be described later, and can also be formed to be combined with the chamber cover that covers the process chamber.

[0172] The reaction body 210 can be attached to the exhaust plate 300 to supply activated process gas to the exhaust plate 300. For example, the exhaust port 320 is connected in communication with the opening 215 of the reaction body 210, and the exhaust plate 300 can be formed according to the shape of the reaction body 210.

[0173] As described above, since the exhaust plate 300 is combined with the reaction body 210, the activated process gas generated in the plasma source 200 can be easily supplied to the lower part of the plasma source 200 through the opening 215 and then sprayed through the exhaust plate 300, and particles and the like can be suppressed from entering the plasma source 200 from the outside of the exhaust plate 300 in the opposite direction.

[0174] The exhaust port 320 is a hole structure that passes through the exhaust plate 300, and can be formed into the shape of a cylinder, cone, pyramid, etc.

[0175] In some embodiments, a source insulation component 260 may be inserted between the reaction body 210 and the exhaust plate 300. This prevents noise currents such as grounding current and leakage current from being transmitted to the plasma source through the exhaust plate 300.

[0176] Alternatively, a source insulation component 260 may be integrated below the exhaust plate 300 of the plasma source 200. Accordingly, the process chamber integrated below the source insulation component 260 is electrically insulated, preventing noise currents such as grounding currents and leakage currents generated below the plasma source 200 from being transmitted to the plasma source.

[0177] For example, such as Figure 20 As shown, the source insulation component 260 is formed in a disc shape, supporting the entire exhaust plate 300 at its lower part, and can directly cover and be combined with the process chamber or can be combined with a chamber cover that covers the process chamber. Alternatively, as... Figure 21 As shown, the source insulation component 260 is formed in a ring shape to correspond to the exhaust plate 300, and a chamber cover that covers the process chamber can be formed above the process chamber.

[0178] In some other embodiments, the exhaust plate 300 may be formed of an insulating material. For example, instead of using a separate insulating component, the exhaust plate 300 may be formed of an insulating material, and thus the plasma sources 200 may not be electrically connected to the process chambers but may be spaced apart from each other.

[0179] Figure 22 and Figure 23 This is a schematic perspective view showing a substrate processing apparatus according to various embodiments of the present invention.

[0180] like Figure 22 and Figure 23 As shown, the substrate processing apparatus may include: a process chamber 2000, a substrate support 3000, a plasma source assembly 1000, and a gas jetting unit 4000.

[0181] A reaction space B can be formed inside the process chamber 2000. For example... Figure 21 As shown, the process chamber 2000 can be sealed internally by the exhaust plate 1300 of the plasma source assembly 1000, such as... Figure 22As shown, a chamber cover 2400 may be included at the upper end of the process chamber 2000 to seal the interior.

[0182] The process chamber 2000 can be connected to the vacuum pump 2300 via the exhaust section 2200, thereby creating a vacuum environment. Furthermore, the process chamber 2000 may include an inlet / outlet and a gate (not shown), the inlet / outlet being used to load the substrate S into or unload the substrate S from the reaction space B, and the gate being used to open and close the inlet / outlet.

[0183] The substrate support 3000 can be integrated into the process chamber 2000 to support the substrate S within the reaction space B. For example, the substrate support 3000 may be disposed in the process chamber 1000 facing the gas injection unit 4000. Furthermore, a heater (not shown) for heating the substrate S may be included inside the substrate support 3000. The substrate support 3000 is configured to place the substrate S on it, and therefore may also be referred to as a substrate placement part, base, substrate holder, etc.

[0184] The top plate of the substrate support 3000 has a shape that roughly corresponds to the shape of the substrate S, but is not limited to this; various shapes can be provided to stably place the substrate S. Furthermore, a shaft 2100 is connected to the top plate of the substrate support 3000, and the shaft 2100 can be connected to an external motor (not shown) for lifting. Optionally, a tool for maintaining an airtight seal, such as a bellows, can also be connected between the shaft 2100 and the process chamber 2000.

[0185] In some embodiments, the substrate support 3000 may further include an electrostatic electrode (not shown) to apply an electrostatic force to the substrate S to fix the substrate S on the upper part. In this case, the electrostatic electrode may utilize DC power to generate the electrostatic force.

[0186] The gas injection unit 4000 can be attached to the process chamber 2000 to inject process gases supplied from outside the process chamber 2000 into the reaction space B. For example, the gas injection unit 4000 can be attached to the upper part of the process chamber 2000 facing the substrate support unit 3000. The gas injection unit 4000 can supply process gases, such as source gases, reactive gases, inert gases, etc., to the substrate S inside the reaction space B.

[0187] In some embodiments, the gas injection unit 4000 can be understood as being combined with the exhaust plate 1300 to directly cover the process chamber 2000, or being combined with the exhaust plate 1300 and combined with the process chamber 2000 through the chamber cover 2400, or it can also be combined with the chamber cover 2400.

[0188] The plasma source assembly 1000 is used to activate the process gas supplied from an external source, as described in the following reference. Figures 19 to 21The plasma source assembly 1000 can be coupled to the substrate support 3000 in the process chamber 2000.

[0189] For example, such as Figure 21 As shown, the plasma source assembly 1000 can be integrated into the process chamber 2000 via the exhaust portion 1300 formed at the lower part, or, as... Figure 22 As shown, the exhaust section 1300 formed at the lower part of the plasma source assembly 1000 can be coupled to the chamber cover 2400. The plasma source assembly 1000 is capable of supplying activated process gases, such as free radicals, to the interior space of the gas injection section 4000 below.

[0190] Figure 24 This is a schematic cross-sectional view illustrating a substrate processing apparatus according to a partial embodiment of the present invention; Figure 25 This is a schematic perspective view illustrating a plasma source assembly of a substrate processing apparatus according to a partial embodiment of the present invention. The substrate processing apparatus is... Figure 21 The two embodiments are modified by adding or modifying a portion of the structure of the substrate processing apparatus. Therefore, repeated descriptions are omitted.

[0191] like Figure 24 As shown, the substrate processing apparatus may include: a process chamber 2000, a gas jet section 4000, a substrate support section 3000, and a plasma source assembly 1000.

[0192] The plasma source assembly 1000 is used to activate the process gas supplied from an external source, as described in the following reference. Figures 19 to 21 The plasma source assembly 1000 and the substrate support 3000 are coupled to each other in the process chamber 2000.

[0193] For example, the plasma source assembly 1000 can be directly attached to the upper part of the process chamber 2000, or it can be attached to the chamber cover 2400 covering the process chamber 2000.

[0194] The plasma source assembly 1000 can supply activated process gases, such as free radicals, downwards, to the interior space of the gas jet section 4000.

[0195] like Figure 25 As shown, the plasma source assembly 1000 may include: an exhaust plate 1300; a first plasma source 1100, which is attached to the exhaust plate 1300; and a second plasma source 1200, which is attached to the exhaust plate 1300 to surround the first plasma source 1100.

[0196] The first plasma source 1100 and the second plasma source 1200 can be combined on the exhaust plate 1300. In this case, the exhaust plate 1300 may include a first source gas exhaust port 1310 and a second source gas exhaust port 1320, the first source gas exhaust port 1310 corresponding to the first plasma source 1100 and the second source gas exhaust port 1320 corresponding to the second plasma source 1200.

[0197] The second plasma source 1200 may actually have the same structure as the plasma source described above, and therefore the structure and description related to the plasma source can be referred to.

[0198] The first plasma source 1100 may have a structure similar to the plasma source described above, but from the perspective of forming a small diameter, some of the structure in the plasma source may be modified. For example, in the first plasma source 1100, the reaction body may be composed of one or two pieces instead of three pieces, and accordingly one or two magnetic cores may also be provided.

[0199] For example, the first plasma source 1100 is configured in a ring shape at the center, and the second plasma source 1200 is a larger diameter ring structure that is spaced apart from the first plasma source 1100 on the outside and forms a ring structure surrounding the first plasma source 1100, and can be configured on the edge portion.

[0200] The first plasma source 1100 can be attached to the exhaust plate 1300 to supply activated process gas to the exhaust plate 1300. For example, the exhaust port 310 is connected in communication with the first source opening 1115 of the first plasma source 1100, and the exhaust plate 1300 can be formed according to the shape of the first plasma source 1100.

[0201] The first plasma source 1100 is provided with a first source opening 1115 to discharge process gas activated by the first plasma source 1100; the second plasma source 1200 may be provided with a second source opening 1215 to discharge process gas activated by the second plasma source 1200.

[0202] The process gas activated by the first plasma source 1100 is supplied to the exhaust plate 1300 through the first source opening 1115, and the process gas activated by the second plasma source 1200 is supplied to the exhaust plate 1300 through the second source opening 1215.

[0203] As described above, since multiple plasma sources, such as the first plasma source 1100 and the second plasma source 1200, are arranged on the exhaust plate 1300, the emission amount of process gases activated by a specific region, such as free radicals, can be adjusted. For example, the amount of free radicals emitted from the first plasma source 1100 and the second plasma source 1200 can be adjusted according to the size and shape of the first source opening 1115 and the second source opening 1215.

[0204] In some embodiments, source insulation components 1160 and 1260 may be inserted between the first plasma source 1100, the second plasma source 1200, and the exhaust plate 1300. This prevents noise currents such as grounding current and leakage current from being transmitted to the plasma source through the exhaust plate 300.

[0205] According to some embodiments, a first plasma source 1100 receives process gas from a process gas supply device 5000 via a first gas conduit 5100, and a second plasma source 1200 receives process gas from the process gas supply device 5000 via a second gas conduit 5200. This plasma source assembly 1000 can spray activated process gas entirely from the center and edges of the gas injection section 4000.

[0206] In some embodiments, the gas injection unit 4000 may include an injection plate 4100 for injecting activated process gas supplied from the plasma source assembly 1000 into the reaction space B. A plurality of injection holes can be formed in the injection plate 4100 in a vertical direction. Optionally, the gas injection unit 4000 may also include an intermediate plate, such as a baffle, for injecting gas between the chamber cover 2400 and the injection plate 4100.

[0207] In some embodiments, the gas injection unit 4000 may also include a separate air inlet to supply process gas internally without passing through the plasma source assembly 1000. In this case, the gas injection unit 4000 may also supply both process gas activated by the plasma source assembly 1000 and process gas that is not activated without passing through the plasma source assembly 1000.

[0208] According to the plasma source assembly 1000, when the supply of the second plasma source 1200 is controlled to be greater than the supply of the first plasma source 1100, the supply of process gas at the edge of the substrate S can be higher than the supply at the center. This adjustment of the supply of process gas replenishes the points with relatively low plasma density at the edge of the substrate S, thereby promoting a uniform reaction on the substrate S.

[0209] The substrate processing apparatus according to the various embodiments of the present invention described above can be used as a thin film deposition apparatus, such as an atomic layer deposition (ALD) apparatus or a chemical vapor deposition (CVD) apparatus.

[0210] According to the plasma source assembly of the present invention, the main body 211 constituting the plasma source 200 has no fastening parts other than the insulating part 216. Therefore, no boundary surface is formed on the inner wall surrounding the gas diffusion space 214 formed inside the main body 211. As a result, the flow of process gas is more uniform, and the generation of particles at the boundary surface can be prevented. Furthermore, the absence of fastening parts can reduce the volume or increase the area of ​​the gas diffusion space 214.

[0211] In addition, a porous support portion 219 is formed around the gas diffusion space 214 to expand the heat dissipation area within the same volume, and the overall volume can be reduced in order to achieve the same heat dissipation performance.

[0212] According to the substrate processing apparatus of the present invention, since the plasma source assembly 1000 is directly coupled to the gas injection unit 4000, the activated process gas, such as free radicals, can be directly supplied to the substrate S, thereby shortening the free radical supply path. Accordingly, by using the plasma source assembly 1000, compared with the use of existing remote plasma devices, free radical recombination can be further reduced, free radical supply efficiency can be improved, and thus process reliability can be improved.

[0213] Furthermore, according to the substrate processing apparatus, by forming a porous support portion 219 or a cooling medium flow portion 2183 and a porous support portion 219 within the plasma source assembly 1000, the temperature of the plasma source assembly 1000 can be controlled, which can reduce plasma damage to the plasma source assembly 1000 and improve the stability and efficiency of the substrate processing process.

[0214] The invention has been described with reference to the embodiments illustrated in the accompanying drawings; however, these are merely exemplary, and it will be understood by one of ordinary skill in the art that various modifications and equivalent embodiments can be implemented. Therefore, the true scope of protection of this invention should be defined by the technical concept of the claims.

Claims

1. A plasma source, comprising: The reaction body is composed of multiple main body parts, each main body part forming a gas diffusion space inside. At least one insulating part is formed between the multiple main body parts that are combined with each other. The gas diffusion spaces within the multiple main body parts are interconnected to form a closed loop shape and activate annular channels for process gases. The magnetic core portion is formed to surround at least a portion of the main body portion; The winding section is configured to wind the magnetic core section and receive power from the power supply section to induce magnetic force within the magnetic core section; The main body includes: The inner wall portion forms the gas diffusion space; and A porous support portion is formed on the outer side of the inner wall portion to facilitate heat transfer between the interior and exterior of the main body portion; In the main body, the inner surface of the gas diffusion space is formed as a continuous surface, and the porous support is formed continuously on the inner wall without boundary lines.

2. The plasma source according to claim 1, characterized in that, The porous support portion is formed to surround at least a portion of the inner wall portion.

3. The plasma source according to claim 1, characterized in that, The main body includes a cooling medium flow section. The cooling medium flow section is formed in the inner wall section to allow the flow of cooling medium for cooling the heat inside the main body section.

4. The plasma source according to claim 3, characterized in that, The main body is formed as a single component, so that the inner wall, the cooling medium flow section, and the porous support section are continuous without boundary lines.

5. The plasma source according to claim 3, characterized in that, The porous support portion is formed to at least surround a portion of the inner wall portion; The cooling medium flow section is formed in other parts of the inner wall section exposed from the porous support section.

6. The plasma source according to claim 3, characterized in that, A refrigerant inlet and a refrigerant outlet are formed in the main body. The refrigerant inlet is connected to one end of the cooling medium flow section, and the refrigerant outlet is connected to the other end of the cooling medium flow section.

7. The plasma source according to claim 1, characterized in that, The main body is formed by a first region having a first height and a first width and a second region having a second height and a second width; The first height is greater than the second height; The first width is greater than the second width; The magnetic core portion is configured to surround the second region of the main body portion.

8. The plasma source according to claim 7, characterized in that, The main body includes a cooling medium flow section. The cooling medium flow section is formed in the inner wall section to allow the cooling medium used to cool the heat inside the main body to flow. At least a portion of the cooling medium flow section is formed in the first region.

9. The plasma source according to claim 8, characterized in that, The main body includes a cooling medium flow section. The cooling medium flow section is formed in the inner wall section to allow the cooling medium used to cool the heat inside the main body to flow. At least another portion of the cooling medium flow section is formed in the second region.

10. The plasma source according to claim 7, characterized in that, At least a portion of the porous support is formed in the first region.

11. The plasma source according to claim 7, characterized in that, At least another portion of the porous support is formed in the second region.

12. The plasma source according to claim 7, characterized in that, At least a portion of the porous support is formed to have a first density in the first region; At least another portion of the porous support is formed to have a second density in the second region; In order for at least another portion of the porous support to support the magnetic core in the second region, the second density is greater than the first density.

13. The plasma source according to claim 7, characterized in that, At least a portion of the porous support is formed to have a first porosity in the first region; At least another portion of the porous support is formed to have a second porosity in the second region; To enable the second region to cool more rapidly than the first region, the second porosity is greater than the first porosity.

14. The plasma source according to claim 1, characterized in that, At least one air intake is formed on the upper part or side part of the main body; At least one opening is formed in the lower part of the main body.

15. The plasma source according to claim 14, characterized in that, include: An exhaust plate is formed with multiple exhaust ports to allow the process gas activated in the reaction body to be discharged to the lower part, and is combined with the lower part of the reaction body so that the exhaust ports are in communication with the at least one opening.

16. The plasma source according to claim 15, characterized in that, The exhaust plate is formed of insulating material.

17. The plasma source according to claim 15, characterized in that, A source insulation component is combined between the reaction body and the exhaust plate.

18. A substrate processing apparatus, comprising: The process chamber forms a reaction space inside; A substrate support is attached to the lower part of the process chamber to support the substrate within the reaction space. A plasma source assembly is combined above the process chamber and is configured with one or more plasma sources according to any one of claims 1 to 14; and A gas injection section is disposed at the lower part of the plasma source assembly, facing the substrate support section, and has a gas injection plate formed thereon for injecting process gas activated by the plasma source assembly onto the substrate support section. The plasma source assembly includes: An exhaust plate is provided, forming an exhaust port to allow the process gas to be discharged to the lower part. A first plasma source is integrated into the exhaust plate; and A second plasma source is disposed on the outside, spaced apart from the first plasma source, and is incorporated into the exhaust plate; The first plasma source is provided with a first opening to discharge process gas activated by the first plasma source; the second plasma source is provided with a second opening to discharge process gas activated by the second plasma source.

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