A multi-segment skip scanning method, device, equipment and medium for electron beam additive manufacturing

Abstract

The application provides a multi-line segment skip scanning method, device, equipment and medium for electron beam additive manufacturing, belongs to the technical field of electron beam additive manufacturing, and changes the segmentation mode and scanning sequence of scanning lines in a single layer, so that the scanning path in the same filling area is changed from a continuous long line to a combination of several short line segments, the continuous heat input process can be interrupted, the continuous heat accumulation in a single direction is reduced, and the upper surface topography is improved; through the cooperative design of the line segment length and the scanning sequence, the reheating time between adjacent molten pools is changed from an uncontrollable state to a design parameter, and the molten pool heat accumulation, molten pool lap behavior, upper surface topography and microstructure are regulated.

Description

Technical Field

[0001] This application belongs to the field of electron beam additive manufacturing technology, and relates to a multi-segment jump scanning method, apparatus, equipment and medium for electron beam additive manufacturing. Background Technology

[0002] Additive manufacturing typically employs continuous line scanning to fill cross-sections. Traditional line scanning paths offer advantages such as simple path planning and high filling efficiency. However, in actual forming processes, continuous long line scanning can easily lead to problems such as concentrated local heat input, significant heat accumulation along the length of the molten pool, end overheating or collapse, and increased surface undulations. Particularly in materials sensitive to thermal history, such as titanium alloys, the temperature field differences caused by the scanning path can further affect columnar epitaxial growth, α-lamellae microstructure size, and final mechanical properties.

[0003] Existing continuous line scanning methods typically optimize forming quality by adjusting beam current, scanning speed, line spacing, and preheating temperature. However, they lack effective control over the return time of adjacent molten pools within the same cross-section, the overlap state of short line segments, and the thermal cycling rhythm along the path. For complex cross-sections or small-sized specimens, continuous line scanning is also prone to problems such as excessively short local line lengths, abrupt path changes, and uneven heat distribution, leading to fluctuations in upper surface morphology, porosity defects, and inhomogeneous microstructure.

[0004] Therefore, it is necessary to propose a novel multi-segment jump scanning method to achieve active control over the molten pool overlap behavior and microstructure. Summary of the Invention

[0005] The purpose of this application is to provide a multi-segment jump scanning method, apparatus, equipment and medium for electron beam additive manufacturing, so as to solve the problems of uncontrollable heat accumulation, difficulty in adjusting the return time of adjacent molten pools, surface morphology fluctuation and insufficient microstructure control in traditional continuous line scanning process.

[0006] To achieve the purpose of this application, the following technical solution is adopted: In a first aspect, this application provides a multi-segment jump scanning method for electron beam additive manufacturing, the multi-segment jump scanning method comprising: Obtain the cross-sectional contour data of the current layer of the part to be formed, and determine the filling area, scanning direction, filling line spacing and filling scan line length of the current layer; The continuous scan lines within the filling area are divided into several line segment units, each line segment unit comprising several basic melt pool units; Electron beam scanning is performed on several line segment units according to a preset scanning sequence, and the return time of adjacent molten pools within the line segment units is controlled to form a line segment scan filling layer.

[0007] In this application, before obtaining the cross-sectional contour data of the current layer of the part to be formed, the method further includes: establishing a three-dimensional model of the electron beam additive manufacturing part and slicing the three-dimensional model.

[0008] The multi-segment jump scanning method provided in this application, by changing the segmentation method and scanning order of the scan lines within a single layer, transforms the scanning path within the same filling area from a continuous long line into a combination of several short segments. This interrupts the continuous heat input process, reduces continuous heat accumulation in a single direction, and is beneficial for improving the surface morphology. Through the coordinated design of segment length and scanning order, the reheating time between adjacent molten pools is transformed from an uncontrollable state to a designable parameter, enabling the control of molten pool heat accumulation, molten pool overlap behavior, surface morphology, and microstructure. The multi-segment jump scanning method solves the problems of uncontrollable heat accumulation, difficulty in adjusting the return time of adjacent molten pools, surface morphology fluctuations, and insufficient microstructure control capabilities in traditional continuous line scanning processes.

[0009] In some embodiments, the parameters for determining the length of the line segment unit include any one or a combination of at least two of the following: material type, electron beam current, scanning speed, total length of the line segment within the filled area, center-to-center distance between adjacent base molten pool units along the scanning direction, cross-sectional dimensions, or target return time.

[0010] In some embodiments, the length of the line segment unit is 5mm to 20mm, for example, it can be 6mm, 8mm, 10mm, 12mm, 14mm, 15mm, 16mm or 18mm, etc.

[0011] In some embodiments, the preset scanning order is sequential scanning; The sequential scanning process specifically includes: after scanning a basic melt pool unit in the i-th segment unit, sequentially jumping to the corresponding basic melt pool units in the (i+1), (i+2), ..., (i+n)-th segment units for scanning, until the scanning of the basic melt pool units corresponding to all segment units is completed, and then returning to the i-th segment unit to scan the next basic melt pool unit, so that the basic melt pool units in each segment unit are arranged in a preset order to form a spatiotemporal staggered arrangement of micro melt pools.

[0012] In this application, the spatiotemporal staggered arrangement process specifically includes: for the same model, in any spatial arrangement scheme, each line segment unit adopts the same preset length, and the scanning order remains unchanged; different spatial arrangement schemes adopt different preset lengths, so that the line segment division position and the formation position of the basic melt pool unit in each sequential scan, i.e. the landing point of the micro melt pool, change accordingly, thereby forming a spatiotemporal staggered arrangement of the micro melt pool.

[0013] In some embodiments, the return time of the adjacent molten pool is the time interval between the completion of a previous scan and the next time the adjacent area is heated again at a certain molten pool location or an adjacent molten pool location.

[0014] In some embodiments, the adjustment parameters for the return time of adjacent molten pools include any one or a combination of at least two of the following: center spacing of adjacent base molten pool units along the scanning direction, number of beams, scanning path sequence, jump distance, scanning speed, or beam size.

[0015] In some embodiments, the return time of the adjacent molten pool is calculated according to the following formula (I): (I) In formula (I), The return time (ms) of the adjacent molten pool. The scan time (ms) for the basic molten pool element. This represents the total length of the scan lines within the filled area (mm). The length of the line segment unit is (mm). and The ratio is rounded up, where < .

[0016] This application does not further limit the specific value of the total length of the scan line within the filling area. It can be determined based on the intersection of the boundary of the filling area and the scan line in the current scanning direction, and the sum of the lengths of each continuous segment of the same scan line within the filling area can be taken, for example, it can be 100mm-7500mm, or multiples thereof.

[0017] In some embodiments, the scanning time of the basic molten pool unit is calculated according to the following formula (II): (II) In formula (II), The length of the basic molten pool unit (mm) is where < , The scanning speed is measured in mm / ms.

[0018] This application does not further limit the specific value of the scanning speed. It can be selected from the equipment process parameter library according to the material type, electron beam current and target line energy input, or calculated according to the electron beam power and target energy input per unit length. For example, it can be 0.2mm / ms-2.5mm / ms.

[0019] In some embodiments, the length of the basic molten pool unit is calculated according to the following formula (III): (III) In formula (III), The center-to-center distance (mm) between adjacent basic molten pool units along the scanning direction. This is the overlap rate of adjacent basic molten pool elements along the scanning direction, with a value range of 0 to 100%, such as 10%, 20%, 30%, 40%, 50%, 60%, 70%, 80%, or 90%.

[0020] In this application, the specific value of the center distance between adjacent base molten pool units along the scanning direction is not further limited. It can be set by the length and overlap rate of the base molten pool unit, or calculated by formula (III). For example, it can be 0.2mm-0.8mm.

[0021] In some embodiments, the multi-segment jump scanning method further includes: Repeat the multi-segment jump scan method to form the next layer; In the process of forming several layers, the starting position of the line segments, the boundary of the line segment division, the scanning direction or the scanning sequence of the adjacent layers are adjusted.

[0022] The applicant validated the return time control experiment based on adjacent melt pools, specifically including: Titanium alloy powder was selected as the forming material, and samples were prepared in an electron beam powder bed additive manufacturing system. With the same layer thickness, preheating temperature, filler line spacing, and scanning speed, the continuous scan line was divided into several line segment units. Under the same electron beam current of 6 mA, by adjusting the line segment unit length and the number of beam splits, the return times of adjacent molten pools were made to be 12 ms, 24 ms, and 40 ms, respectively. The scanning path diagrams are shown below. Figure 1-3 The above. Subsequently, the upper surface morphology of different samples was observed (e.g. Figure 4-6 (as shown) and microstructural analysis (such as Figure 7-9 (As shown).

[0023] The results show that, under certain electron beam current conditions, increasing the return time of adjacent molten pools can change the local thermal cycling state, causing the microstructure to transform from continuous columnar crystals to mixed crystals or near-equiaxed microstructures. This indicates that the segment scanning method can regulate the microstructure morphology during electron beam additive manufacturing.

[0024] The applicant also verified experiments on electron beam current modulation under a fixed return time, specifically including: With a fixed return time of 40 ms between adjacent molten pools, the electron beam current was varied to 6 mA and 10 mA, and the changes in microstructure under different thermal input conditions were compared (e.g., Figure 9-10 (As shown).

[0025] The results show that when the return time of adjacent molten pools remains constant while the beam current increases, the heat input of a single molten pool increases, local heat accumulation is enhanced, and the microstructure may revert from a mixed or near-equiaxed state to a columnar crystal structure. Simultaneously, the α-lamellae microstructure exhibits a coarsening trend. This indicates that the return time does not solely determine the microstructure morphology; it must be matched in conjunction with the beam current, scanning speed, and filler line spacing.

[0026] Secondly, this application provides an electron beam additive manufacturing method, the electron beam additive manufacturing method comprising: Alloy powder is spread on a forming substrate, and an electron beam is used to perform layer-by-layer cladding on the alloy powder according to the multi-segment jump scanning method described in the first aspect until the entire part is clad and formed.

[0027] In some embodiments, the alloy includes any one or a combination of at least two of high-temperature alloys, titanium alloys, or tungsten alloys.

[0028] In some embodiments, the part includes any one of thin-walled parts, sharp-cornered parts, regular cross-section parts, or variable cross-section parts.

[0029] Thirdly, this application provides a multi-segment jump scanning apparatus for electron beam additive manufacturing, the apparatus comprising: The data acquisition module is used to acquire the cross-sectional contour data of the current layer of the part to be formed, and to determine the filling area, scanning direction, filling line spacing and filling scan line length of the current layer. A partitioning module is used to divide the continuous scan lines in the filling area into several line segment units, wherein the line segment unit includes several basic melt pool units; The electron beam scanning module is used to perform electron beam scanning on several line segment units according to a preset scanning sequence, and to control the return time of adjacent molten pools within the line segment units to form a line segment scan filling layer.

[0030] Fourthly, this application provides an electronic device, the electronic device comprising: At least one processor; and a memory communicatively connected to said at least one processor; wherein, The memory stores a computer program executable by the at least one processor, which enables the at least one processor to perform the multi-segment jump scan method for electron beam additive manufacturing as described in the first aspect.

[0031] Fifthly, this application provides a computer-readable storage medium, characterized in that the computer-readable storage medium stores computer instructions, which are used to cause a processor to execute and implement the multi-segment jump scanning method for electron beam additive manufacturing as described in the first aspect.

[0032] Compared with the prior art, this application has the following advantages: (1) The multi-segment jump scanning method provided in this application can interrupt the continuous heat input process by splitting the continuous scan line into segment units, thereby reducing the continuous heat accumulation in a single direction and improving the morphology of the upper surface. Through the coordinated design of segment length and scanning sequence, the reheating time between adjacent molten pools can be transformed from an uncontrollable state to a designable parameter, thereby realizing the control of molten pool heat accumulation, molten pool overlap behavior, upper surface morphology and microstructure.

[0033] (2) The multi-segment jump scanning method provided in this application can change the local thermal cycling conditions by adjusting the return time and scanning path, thereby affecting the epitaxial growth of columnar crystals, the tendency of equiaxed crystal formation, and the size of α-lamellae structure. Under certain conditions, increasing the return time of adjacent molten pools can weaken continuous thermal accumulation, causing the structure to transform from a single columnar crystal to a mixed crystal or near-equiaxed structure.

[0034] (3) The multi-segment jump scanning method provided in this application can be used for basic experiments of conventional square, circular and strip test blocks, and can also be extended to the forming verification of complex structures such as thin walls, sharp corners and abrupt changes in cross sections, providing a basis for the optimization of scanning paths under different geometric features. Attached Figure Description

[0035] To more clearly illustrate the technical solutions in the embodiments of this application, the accompanying drawings used in the description of the embodiments will be briefly introduced below. Obviously, the accompanying drawings described below are only some embodiments of this application. For those skilled in the art, other drawings can be obtained based on these drawings without creative effort.

[0036] Figure 1 , Figure 2 , Figure 3 These are schematic diagrams of the scanning paths under different return times provided in this application.

[0037] Figure 4 , Figure 5 , Figure 6 These are top surface morphology images of the filled surface at different return times provided in this application.

[0038] Figure 7 , Figure 8 , Figure 9 These are images of the microstructure after filling at different return times provided in this application.

[0039] Figure 10 This is a microstructure image of the tissue after filling with an electron beam current of 10mA, as provided in this application.

[0040] Figure 11This is a flowchart of the multi-segment jump scanning method for electron beam additive manufacturing provided in Example 1.

[0041] Figure 12 This is a schematic diagram of the division of continuous scan lines provided in Example 1; Wherein, 1-melt pool jump path, 2-length of a single basic molten pool unit, and 3-center spacing of a single adjacent basic molten pool unit along the scanning direction.

[0042] Figure 13 This is a schematic diagram of a continuous line scanning path in electron beam additive manufacturing in the prior art; Among them, 110 is the filling area, 120 is the inner contour area, and 130 is the outer contour area.

[0043] Figure 14 This is a schematic diagram of the multi-segment jump scanning device for electron beam additive manufacturing provided in this application.

[0044] Figure 15 This is a schematic diagram of the electronic device structure provided in this application for implementing the multi-segment jump scanning method of electron beam additive manufacturing. Detailed Implementation

[0045] To enable those skilled in the art to better understand the present application, the technical solutions in the embodiments of the present application will be clearly and completely described below with reference to the accompanying drawings. Obviously, the described embodiments are only some embodiments of the present application, and not all embodiments. Based on the embodiments in the present application, all other embodiments obtained by those of ordinary skill in the art without creative effort should fall within the scope of protection of the present application.

[0046] It should be noted that the terms "first," "second," "candidate," "target," etc., used in the specification, claims, and accompanying drawings of this application are used to distinguish similar objects and are not necessarily used to describe a specific order or sequence. It should be understood that such data can be interchanged where appropriate so that the embodiments of this application described herein can be implemented in orders other than those illustrated or described herein. Furthermore, the terms "comprising" and "having," and any variations thereof, are intended to cover non-exclusive inclusion; for example, a process, method, system, product, or apparatus that comprises a series of steps or units is not necessarily limited to those steps or units explicitly listed, but may include other steps or units not explicitly listed or inherent to such processes, methods, products, or apparatus.

[0047] Example 1 This embodiment provides a multi-segment jump scanning method for electron beam additive manufacturing. This method can be executed by a multi-segment jump scanning device for electron beam additive manufacturing. The multi-segment jump scanning device for electron beam additive manufacturing can be implemented in hardware and / or software. The multi-segment jump scanning device for electron beam additive manufacturing can be configured in an electronic device that has the capability to implement the multi-segment jump scanning method for electron beam additive manufacturing.

[0048] like Figure 11 As shown, the method provided in this embodiment includes: S101. Obtain the cross-sectional contour data of the current layer of the part to be formed, and determine the filling area, scanning direction, filling line spacing and filling scan line length of the current layer.

[0049] In step S101, before obtaining the cross-sectional contour data of the current layer of the part to be formed, the method further includes: establishing a three-dimensional model of the electron beam additive manufacturing part and slicing the three-dimensional model.

[0050] For example, the filling area can be a regular rectangle, a circle, an annular cross section, or a complex cross section with local abrupt changes, thin walls, sharp corners, or variable cross section features.

[0051] S102, Divide the continuous scan lines within the filled area into several line segment units (e.g., Figure 12 As shown in the figure, the line segment unit includes several basic molten pool units.

[0052] For example, the continuous scan line is divided into several line segment units (short line segments) according to the preset minimum distance between two adjacent points, so that each continuous scan line is decomposed into at least two line segment units.

[0053] In step S102, the parameters for determining the length of the line segment unit include any one or a combination of at least two of the following: material type, electron beam current, scanning speed, total length of the line segment within the filling area, center-to-center distance between adjacent base molten pool units along the scanning direction, cross-sectional dimensions, or target return time.

[0054] For example, the length of the line segment unit is 5mm to 20mm.

[0055] S103. Perform electron beam scanning on several line segment units according to the preset scanning sequence, and control the return time of adjacent molten pools within the line segment units to form a line segment scan filling layer.

[0056] In step S103, the preset scanning order is sequential scanning; For example, the sequential scanning process specifically includes: after scanning a basic melt pool unit in the i-th segment unit, sequentially jumping to the corresponding basic melt pool units in the (i+1), (i+2), ..., (i+n)-th segment units for scanning, until the scanning of the basic melt pool units corresponding to all segment units is completed, and then returning to the i-th segment unit to scan the next basic melt pool unit, so that the basic melt pool units in each segment unit are arranged in a preset order to form a spatiotemporal staggered arrangement of micro melt pools.

[0057] For example, the spatiotemporal staggered arrangement process specifically includes: for the same model, in any spatial arrangement scheme, each line segment unit adopts the same preset length, and the scanning order remains unchanged; different spatial arrangement schemes adopt different preset lengths, so that the line segment division position and the formation position of the basic melt pool unit in each sequential scan, that is, the landing point of the micro melt pool, change accordingly, thereby forming a spatiotemporal staggered arrangement of the micro melt pool.

[0058] In step S103, the return time of the adjacent molten pool is the time interval between the completion of the previous scan and the next heating of the adjacent area at a certain molten pool position or adjacent molten pool position.

[0059] For example, the adjustment parameters for the return time of adjacent molten pools include any one or a combination of at least two of the following: center spacing of adjacent basic molten pool units along the scanning direction, number of beams, scanning path sequence, jump distance, scanning speed, or beam size.

[0060] The number of beams for each scan line is determined based on the single-layer cross-sectional dimensions and the target line segment length.

[0061] In some embodiments, the return time of the adjacent molten pool is calculated according to the following formula (I): (I) In formula (I), The return time (ms) of the adjacent molten pool. The scan time (ms) for the basic molten pool element. This represents the total length of the scan lines within the filled area (mm). The length of the line segment unit is (mm). and The ratio is rounded up, where < .

[0062] In some embodiments, the scanning time of the basic molten pool unit is calculated according to the following formula (II): (II) In formula (II), The length of the basic molten pool unit (mm) is where < , The scanning speed is measured in mm / ms.

[0063] In some embodiments, the length of the basic molten pool unit is calculated according to the following formula (III): (III) In formula (III), The center-to-center distance (mm) between adjacent basic molten pool units along the scanning direction. This represents the overlap rate of adjacent basic molten pool elements along the scanning direction, with a value ranging from 0 to 100%.

[0064] In this embodiment, the electron beam completes the filling of the current layer according to a preset scanning sequence, so that the short segments form continuous overlaps in the horizontal and vertical directions, and finally form a complete molten layer.

[0065] The multi-segment jump scan method also includes repeating the multi-segment jump scan method to form the next layer.

[0066] For example, during the forming process of several layers, the starting position of line segments, the line segment division boundary, the scanning direction, or the scanning sequence of adjacent layers can be adjusted.

[0067] In this way, by adjusting the starting position of the line segments, the line segment division boundary, the scanning direction or the scanning sequence of adjacent layers, the heat accumulation position between layers and the starting and ending positions of the path do not completely coincide, so as to reduce the risk of local defect accumulation caused by repeated heat input at fixed path positions.

[0068] The multi-segment jump scanning method provided in this embodiment changes the segmentation method and scanning order of the scan lines within a single layer, so that the scan path within the same filling area changes from a continuous long line (such as...) Figure 13 The process (as shown) is transformed into a combination of several short line segments, which can interrupt the continuous heat input process, reduce continuous heat accumulation in a single direction, and help improve the morphology of the upper surface. Through the coordinated design of line segment length and scanning sequence, the reheating time between adjacent molten pools is transformed from an uncontrollable state to a designable parameter, realizing the control of molten pool heat accumulation, molten pool overlap behavior, upper surface morphology, and microstructure. The multi-segment skip scanning method solves the problems of uncontrollable heat accumulation, difficulty in adjusting the return time of adjacent molten pools, surface morphology fluctuation, and insufficient microstructure control capability in the traditional continuous line scanning process.

[0069] Example 2 This embodiment selects titanium alloy powder as the forming material to further explain the composition of the specific technical solution.

[0070] First, based on step S101, the cross-sectional contour data of the current layer of the part to be formed is obtained, and the filling area, scanning direction, filling line spacing and total length of line segments in the filling area of ​​the current layer are determined. It is assumed that the total length of line segments in the filling area is 2250mm.

[0071] Secondly, based on step S102, the continuous scan line is divided into several line segment units, with the length of the line segment unit being 5mm~20mm and the length of the basic molten pool unit being 0.7mm~1.5mm; Finally, based on step S103, several line segment units are scanned by electron beam according to a preset sequence. The scanning speed is 0.2 mm / ms to 2.5 mm / ms. The center distance between adjacent basic molten pool units along the scanning direction is 0.2 mm to 0.8 mm, and the overlap rate between adjacent basic molten pool units along the scanning direction is 20% to 60%. The return time of adjacent molten pools within the line segment unit is controlled according to the above formula to form a line segment scanning filling layer. Then, the multi-line segment jump scanning method is repeated to form the next layer, and the starting position of the line segments in the adjacent layers is adjusted.

[0072] The multi-segment jump scanning method provided in this embodiment changes the segmentation method and scanning order of the scan lines within a single layer, transforming the scanning path within the same filling area from a continuous long line into a combination of several short segments. This can interrupt the continuous heat input process, reduce continuous heat accumulation in a single direction, and improve the morphology of the upper surface. Through the coordinated design of the segment length and scanning order, the reheating time between adjacent molten pools is transformed from an uncontrollable state to a designable parameter, enabling the control of molten pool heat accumulation, molten pool overlap behavior, upper surface morphology, and microstructure.

[0073] Example 3 This embodiment provides a multi-segment jump scanning method for electron beam additive manufacturing. Except for adjusting the segment length to 0.5mm~4mm, all other conditions are the same as in Embodiment 2.

[0074] In this embodiment, the length of the line segment unit is used to jointly control the spatial arrangement and formation time of the basic molten pool units. When the length of the line segment unit is too short, the spatial distance between the basic molten pool units formed successively in adjacent line segment units according to the preset scanning order is correspondingly reduced. When this spatial distance is less than the actual molten pool length of the basic molten pool unit along the line segment direction, the basic molten pool units formed adjacent in time overlap or excessively overlap in space, making the scanning process approach continuous scanning and weakening the preset spatiotemporal discrete control effect of the molten pool. At the same time, the shorter length of the line segment unit will increase the number of line segment units within a unit scanning length, and the return time of the electron beam to the original line segment unit after completing a round of scanning will increase accordingly. Thus, on the one hand, the basic molten pool units formed adjacent in time tend to be arranged continuously in space, making the scanning process approach continuous scanning; on the other hand, the time interval between the previous and subsequent basic molten pool units within the same line segment unit increases, the cooling time of the previous basic molten pool is prolonged, and the continuous response and heat connection capability of the molten pool are reduced. The aforementioned spatial overlap and return time variation together weaken the spatiotemporal misalignment control effect of the base molten pool, which may lead to decreased scanning efficiency, insufficient beam spot response, or increased end defects of line segments.

[0075] Example 4 This embodiment provides a multi-segment jump scanning method for electron beam additive manufacturing. Except for adjusting the segment unit length to 22mm~30mm, all other conditions are the same as in Embodiment 2.

[0076] In this embodiment, if the length of the line segment unit is too long, the number of line segment units is reduced accordingly, given a fixed total length of the line segments to be scanned. After the electron beam completes the scanning of the corresponding basic molten pool unit in each line segment unit according to the preset scanning sequence, the scanning process required to return to the original line segment unit is reduced, thereby shortening the return time. When the return time is too short, the time interval between the basic molten pool units formed one after another within the same line segment unit decreases. Before the previous basic molten pool has fully cooled or solidified, the next basic molten pool is formed in its adjacent spatial position, causing the heat-affected zones of the two to overlap spatially. Local heat is difficult to dissipate in time, which can easily lead to heat accumulation, increased molten pool size, or decreased molten pool stability, ultimately potentially causing local overmelting, surface undulations, or increased defects.

[0077] Comparative Example 1 This comparative example provides a multi-segment jump scanning method for electron beam additive manufacturing. Except for adjusting step S103 to: numbering each segment unit and scanning each segment unit according to a preset numbering scanning order, and scanning the next segment unit only after the entire segment unit has been scanned, all other conditions are the same as in Example 2.

[0078] In this comparative example, although the continuous scan line is divided into several line segment units, the entire line segment unit is scanned sequentially. That is, after completing the entire scan of one line segment unit, the next line segment unit is scanned. The return time of adjacent molten pools is not controlled through alternating scans between different line segment units. From a temporal perspective, the electron beam continuously forms adjacent molten pools within the same line segment unit. The time interval between adjacent molten pools is mainly determined by the scanning time of the beam spot moving continuously along the line segment. The return time is short and cannot be independently adjusted. Before the previous basic molten pool has fully cooled or solidified, the next basic molten pool forms in its adjacent position, easily causing continuous heat accumulation. Therefore, the lack of control over the return time of adjacent molten pools is the main factor affecting the stability of the molten pool and the degree of heat accumulation. From a spatial perspective, adjacent molten pools formed continuously in time are arranged sequentially along the same line segment direction. Their spatial positions are continuous and close together. Their molten pool areas and heat-affected zones are prone to continuous overlap or excessive overlap, causing heat input to concentrate in the same direction, making it difficult to achieve the spatially staggered heating effect between different line segment units as in Example 2. Therefore, this scanning method results in short intervals of repeated heating between adjacent areas in time, and continuous superposition of the molten pool and heat-affected zone in a single direction in space. Because the return time is not effectively controlled, localized heat cannot dissipate in time, potentially leading to problems such as increased molten pool size, decreased molten pool stability, localized overmelting, surface undulations, and uneven microstructure.

[0079] This application also provides an electron beam additive manufacturing method, which includes: Alloy powder is spread on a forming substrate, and an electron beam is used to clad the alloy powder layer by layer according to the multi-segment jump scanning method described in Example 1 until the entire part is clad and formed.

[0080] This application also provides a multi-segment jump scanning device for electron beam additive manufacturing, such as... Figure 14 As shown, the device includes: a data acquisition module 201, a segmentation module 202, and an electron beam scanning module 203. Wherein: The data acquisition module 201 is used to acquire the cross-sectional contour data of the current layer of the part to be formed, and to determine the filling area, scanning direction, filling line spacing and filling scanning line length of the current layer. The partitioning module 202 is used to divide the continuous scan lines in the filling area into several line segment units, wherein the line segment unit includes several basic melt pool units; The electron beam scanning module 203 is used to perform electron beam scanning on several line segment units according to a preset scanning sequence, and control the return time of adjacent molten pools within the line segment units to form a line segment scanning filling layer.

[0081] The apparatus provided in the specific embodiments of this application can execute the multi-segment jump scanning method for electron beam additive manufacturing provided in any embodiment of this application, and has the corresponding functional modules and beneficial effects of executing the method.

[0082] This application also provides an electronic device for implementing a multi-segment jump scanning method in electron beam additive manufacturing, such as... Figure 15 As shown, this electronic device is intended to represent various forms of digital computers, such as laptop computers, desktop computers, workstations, personal digital assistants, servers, blade servers, mainframe computers, and other suitable computers. This electronic device can also represent various forms of mobile devices, such as personal digital processors, cellular phones, smartphones, wearable devices (such as helmets, glasses, watches, etc.), and other similar computing devices. The components shown herein, their connections and relationships, and their functions are merely illustrative and are not intended to limit the implementation of the present application described and / or claimed herein.

[0083] like Figure 15 As shown, the electronic device 10 includes at least one processor 11 and a memory, such as a read-only memory (ROM) 12 or a random access memory (RAM) 13, communicatively connected to the at least one processor 11. The memory stores computer programs executable by the at least one processor. The processor 11 can perform various appropriate actions and processes based on the computer program stored in the ROM 12 or loaded from storage unit 18 into the RAM 13. The RAM 13 can also store various programs and data required for the operation of the electronic device 10. The processor 11, ROM 12, and RAM 13 are interconnected via a bus 14. An input / output (I / O) interface 15 is also connected to the bus 14.

[0084] Multiple components in electronic device 10 are connected to I / O interface 15, including: input unit 16, such as keyboard, mouse, etc.; output unit 17, such as various types of displays, speakers, etc.; storage unit 18, such as secondary storage area, optical disc, etc.; and communication unit 19, such as network card, modem, wireless transceiver, etc. Communication unit 19 allows electronic device 10 to exchange information / data with other devices through computer networks such as the Internet and / or various telecommunications networks.

[0085] Processor 11 can be a variety of general-purpose and / or special-purpose processing components with processing and computing capabilities. Some examples of processor 11 include, but are not limited to, a central processing unit (CPU), a graphics processing unit (GPU), various special-purpose artificial intelligence (AI) computing chips, various processors running machine learning model algorithms, a digital signal processor (DSP), and any suitable processor, controller, microcontroller, etc. Processor 11 performs the various methods and processes described above, such as the multi-segment jump scan method for electron beam additive manufacturing.

[0086] In some embodiments, the multi-segment skip scanning method for electron beam additive manufacturing can be implemented as a computer program tangibly contained in a computer-readable storage medium, such as storage unit 18. In some embodiments, part or all of the computer program can be loaded and / or mounted on electronic device 10 via ROM 12 and / or communication unit 19. When the computer program is loaded into RAM 13 and executed by processor 11, one or more steps of the multi-segment skip scanning method for electron beam additive manufacturing described above can be performed. Alternatively, in other embodiments, processor 11 can be configured to perform the multi-segment skip scanning method for electron beam additive manufacturing by any other suitable means (e.g., by means of firmware).

[0087] Various embodiments of the systems and techniques described above herein can be implemented in digital electronic circuit systems, integrated circuit systems, field-programmable gate arrays (FPGAs), application-specific integrated circuits (ASICs), application-specific standard products (ASSPs), systems-on-a-chip (SoCs), payload-programmable logic devices (CPLDs), computer hardware, firmware, software, and / or combinations thereof. These various embodiments may include implementations in one or more computer programs that can be executed and / or interpreted on a programmable system including at least one programmable processor, which may be a dedicated or general-purpose programmable processor, capable of receiving data and instructions from a storage system, at least one input device, and at least one output device, and transmitting data and instructions to the storage system, the at least one input device, and the at least one output device.

[0088] Computer programs used to implement the methods of this application may be written in any combination of one or more programming languages. These computer programs may be provided to the processor of a general-purpose computer, a special-purpose computer, or other programmable target-determining device, such that when executed by the processor, the computer programs cause the functions / operations specified in the flowcharts and / or block diagrams to be implemented. The computer programs may be executed entirely on a machine, partially on a machine, or as a standalone software package, partially on a machine and partially on a remote machine, or entirely on a remote machine or server.

[0089] In the context of this application, a computer-readable storage medium can be a tangible medium that may contain or store a computer program for use by or in conjunction with an instruction execution system, apparatus, or device. A computer-readable storage medium can be, but is not limited to, electronic, magnetic, optical, electromagnetic, infrared, or semiconductor systems, apparatus, or devices, or any suitable combination of the foregoing. Alternatively, a computer-readable storage medium can be a machine-readable signal medium. More specific examples of machine-readable storage media include electrical connections based on one or more wires, portable computer disks, hard disks, random access memory (RAM), read-only memory (ROM), erasable programmable read-only memory (EPROM or flash memory), optical fibers, portable compact disk read-only memory (CD-ROM), optical storage devices, magnetic storage devices, or any suitable combination of the foregoing.

[0090] To provide interaction with a user, the systems and techniques described herein can be implemented on an electronic device having: a display device (e.g., a CRT (cathode ray tube) or LCD (liquid crystal display) monitor) for displaying information to the user; and a keyboard and pointing device (e.g., a mouse or trackball) through which the user provides input to the electronic device. Other types of devices can also be used to provide interaction with the user; for example, feedback provided to the user can be any form of sensory feedback (e.g., visual feedback, auditory feedback, or tactile feedback); and input from the user can be received in any form (including sound input, voice input, or tactile input).

[0091] The systems and technologies described herein can be implemented in computing systems that include backend components (e.g., as data servers), or middleware components (e.g., application servers), or frontend components (e.g., user computers with graphical user interfaces or web browsers through which users can interact with implementations of the systems and technologies described herein), or any combination of such backend, middleware, or frontend components. The components of the system can be interconnected via digital data communication of any form or medium (e.g., communication networks). Examples of communication networks include local area networks (LANs), wide area networks (WANs), blockchain networks, and the Internet.

[0092] A computing system can include clients and servers. Clients and servers are generally located far apart and typically interact through communication networks. The client-server relationship is created by computer programs running on the respective computers and having a client-server relationship with each other. The server can be a cloud server, also known as a cloud computing server or cloud host, which is a hosting product within the cloud computing service system to address the shortcomings of traditional physical hosts and VPS services, such as high management difficulty and weak business scalability.

[0093] It should be understood that the various forms of processes shown above can be used to rearrange, add, or delete steps. For example, the steps described in this application can be executed in parallel, sequentially, or in different orders, as long as the desired information of the technical solution of this application can be achieved, and this is not limited herein.

[0094] This application illustrates its detailed structural features through the above embodiments, but it is not limited to these detailed structural features, meaning that this application does not necessarily rely on them for implementation. Those skilled in the art should understand that any improvements to this application, equivalent substitutions of selected components, additions of auxiliary components, and selection of specific methods all fall within the protection and disclosure scope of this application.

Claims

1. A multi-segment jump scanning method for electron beam additive manufacturing, characterized in that, The multi-segment jump scanning method includes: Obtain the cross-sectional contour data of the current layer of the part to be formed, and determine the filling area, scanning direction, filling line spacing and filling scan line length of the current layer; The continuous scan lines within the filling area are divided into several line segment units, each line segment unit comprising several basic melt pool units; Electron beam scanning is performed on several line segment units according to a preset scanning sequence, and the return time of adjacent molten pools within the line segment units is controlled to form a line segment scan filling layer.

2. The multi-segment jump scanning method according to claim 1, characterized in that, The parameters for determining the length of the line segment unit include any one or a combination of at least two of the following: material type, electron beam current, scanning speed, total length of the line segment within the filling area, center-to-center distance between adjacent basic molten pool units along the scanning direction, cross-sectional dimensions, or target return time.

3. The multi-segment jump scanning method according to claim 2, characterized in that, The length of the line segment unit is 5mm to 20mm.

4. The multi-segment jump scanning method according to claim 1, characterized in that, The preset scanning order is sequential scanning; The sequential scanning process specifically includes: after scanning a basic melt pool unit in the i-th segment unit, sequentially jumping to the corresponding basic melt pool units in the (i+1), (i+2), ..., (i+n)-th segment units for scanning, until the scanning of the basic melt pool units corresponding to all segment units is completed, and then returning to the i-th segment unit to scan the next basic melt pool unit, so that the basic melt pool units in each segment unit are arranged in a preset order to form a spatiotemporal staggered arrangement of micro melt pools.

5. The multi-segment jump scanning method according to claim 1, characterized in that, The return time of the adjacent molten pool is the time interval between the completion of the previous scan of a certain molten pool position or the position of an adjacent molten pool and the next time the adjacent area is heated again. The adjustment parameters for the return time of adjacent molten pools include any one or a combination of at least two of the following: center spacing of adjacent basic molten pool units along the scanning direction, number of beams, scanning path sequence, jump distance, scanning speed, or beam size.

6. The multi-segment jump scanning method according to claim 5, characterized in that, The return time of the adjacent molten pool is calculated according to the following formula (I): （I） In formula (I), The return time (ms) of the adjacent molten pool. The scan time (ms) for the basic melt pool cell. This represents the total length of the scan lines within the filled area (mm). The length of the line segment unit is (mm). and The ratio is rounded up, where < ; The scanning time of the basic molten pool unit is calculated according to the following formula (II): (II) In formula (II), The length of the basic molten pool unit (mm) is where ＜ ， Scanning speed (mm / ms); The length of the basic molten pool unit is calculated according to the following formula (III): (III) In formula (III), The center-to-center distance (mm) between adjacent basic molten pool units along the scanning direction. This represents the overlap rate of adjacent basic molten pool elements along the scanning direction, with a value ranging from 0% to 100%. The multi-segment jump scanning method also includes: Repeat the multi-segment jump scan method to form the next layer; In the process of forming several layers, the starting position of the line segments, the boundary of the line segment division, the scanning direction or the scanning sequence of the adjacent layers are adjusted.

7. An electron beam additive manufacturing method, characterized in that, The electron beam additive manufacturing method includes: The alloy powder is spread on the forming substrate, and the electron beam is used to perform layer-by-layer cladding forming of the alloy powder according to the multi-segment jump scanning method described in any one of claims 1-6 until the entire part is clad and formed. The alloy includes any one or a combination of at least two of the following: high-temperature alloys, titanium alloys, or tungsten alloys. The parts include any one of thin-walled parts, sharp-cornered parts, regular cross-section parts, or variable cross-section parts.

8. A multi-segment jump scanning device for electron beam additive manufacturing, characterized in that, The device includes: The data acquisition module is used to acquire the cross-sectional contour data of the current layer of the part to be formed, and to determine the filling area, scanning direction, filling line spacing and filling scan line length of the current layer. A partitioning module is used to divide the continuous scan lines in the filling area into several line segment units, wherein the line segment unit includes several basic melt pool units; The electron beam scanning module is used to perform electron beam scanning on several line segment units according to a preset scanning sequence, and to control the return time of adjacent molten pools within the line segment units to form a line segment scan filling layer.

9. An electronic device, characterized in that, The electronic device includes: At least one processor; and a memory communicatively connected to said at least one processor; wherein, The memory stores a computer program executable by the at least one processor, which enables the at least one processor to perform the multi-segment jump scan method for electron beam additive manufacturing as described in any one of claims 1-7.

10. A computer-readable storage medium, characterized in that, The computer-readable storage medium stores computer instructions that cause a processor to execute the multi-segment jump scan method for electron beam additive manufacturing as described in any one of claims 1-7.

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