A nanoscale cleaving diamond tool for single crystal silicon wafers and a method of manufacture

Abstract

The present application belongs to the technical field of diamond cutter, and discloses a kind of diamond cutter for single crystal silicon wafer nanoscale cleavage and manufacturing method, cutter includes tool body and handle.The tool body is made of CVD diamond with nitrogen content of 8-10ppm, the cutting edge section is isosceles triangle structure, the top angle is 60°±0.5°, and the passivation value is less than 20nm;The cutting edge bevel width is 0.2-0.3mm, the surface roughness is <Ra0.01, and the straightness is less than 0.002mm;The tool body length is 2.6mm, and the thickness is 0.26-0.3mm.The handle is made of non-magnetic material, and is provided with mounting groove, and the tool body is stably installed in the groove.The present application realizes uniform stress on both sides of the cutting edge during cleavage by precisely controlling the nitrogen content of diamond, optimizing the cutting edge structure and nanoscale edge precision, the cutter life reaches 800-900 times, the notch edge collapse is ≤0.0008mm, and it is suitable for high-precision cleavage processing of single crystal silicon wafer.

Description

Technical Field

[0001] This invention belongs to the field of diamond tool technology, and particularly relates to a diamond tool for nanoscale cleaving of single-crystal silicon wafers and its manufacturing method, which is applicable to nanoscale precision cutting and cleaving of single-crystal silicon wafers in semiconductor manufacturing processes. Background Technology

[0002] Wafer dicing is an indispensable and critical process in semiconductor chip manufacturing, and it is a subsequent step in wafer fabrication. Dividing an entire wafer into individual chips (dies) according to their dimensions is called wafer dicing. As the first step in semiconductor packaging, wafer dicing quality directly affects the final reliability of the packaged product. With the rapid development of large-scale integrated circuits towards very large-scale, and the increasing integration density, dicing slots are becoming narrower, demanding increasingly precise dicing technology.

[0003] Currently, wafer dicing methods mainly include abrasive wheel dicing, laser dicing, and scribing. Among these, abrasive wheel dicing is the most widely used method, similar in principle to precision sawing, using ultra-thin diamond or silicon carbide blades rotated at high speed for cutting. However, abrasive wheel dicing has significant limitations: firstly, the abrasive shavings generated during the dicing process easily adhere to the chip surface, potentially causing electrical short circuits in subsequent processes. After packaging, the heat generated during chip operation can also cause silicon shavings to spread, leading to deterioration of the protective film and aluminum wires. Secondly, abrasive wheel dicing easily induces defects such as microcracks at the kerf edges and top chipping. While laser dicing has advantages in certain scenarios, the silicon powder emitted during crystal cutting can scatter, and vaporized silicon microparticles can adhere to the chip surface, causing contamination and rendering the chip unusable.

[0004] In contrast, diamond dicing is a chip-leveling process that utilizes the stress of the material for separation. By applying pressure to the wafer surface, internal microcracks are created, facilitating dicing. Diamond dicing offers significant advantages: the cut surface along the wafer dicing direction becomes mirror-like, making it ideal for die-cutting processes; and the dicing line width is only a few micrometers, thereby increasing the chip integration density of each wafer.

[0005] However, for a long time, wafer scribing tools have been entirely dependent on imports, and tool grinding technology has been blocked by foreign countries. Traditional diamond tools face many technical challenges when used for cleaving single-crystal silicon wafers: First, the microscopic serrations of the cutting edge can cause chipping at the cut to exceed the allowable range; second, excessive edge dulling results in an extremely short tool life; and third, improper cutting edge angle design can lead to uneven force on both sides during cleaving, easily causing edge chipping. Therefore, there is an urgent need to develop a high-precision, long-life diamond tool capable of nanoscale cleaving of single-crystal silicon wafers to break the foreign technological monopoly. Summary of the Invention

[0006] This invention provides a nanoscale cleaving diamond tool for monocrystalline silicon wafers and its manufacturing method, aiming to solve the technical problems of existing monocrystalline silicon wafer cleaving tools such as reliance on imports, insufficient cutting edge precision, and limited service life, and to achieve high precision, high quality and long life in wafer cleaving processing.

[0007] To achieve the above-mentioned objectives, the present invention provides a diamond cleaving tool for nanoscale cleaving of single-crystal silicon wafers, comprising a tool body and a tool holder.

[0008] The cutting tool body is made of CVD diamond with a nitrogen content of 8-10 ppm. CVD diamond (chemical vapor deposition diamond) is a synthetic diamond material prepared by chemical vapor deposition. Compared with high-temperature and high-pressure synthetic polycrystalline diamond, CVD diamond does not contain any metal catalysts and its thermal stability is close to that of natural diamond. This invention achieves higher toughness and stability by strictly controlling the nitrogen content of CVD diamond within the range of 8-10 ppm. Precise control of nitrogen content is crucial for the mechanical properties of diamond—too low a nitrogen content may lead to increased brittleness, while too high a nitrogen content will reduce the hardness and wear resistance of the material. The 8-10 ppm nitrogen content range of this invention is the result of extensive experimental optimization. Within this range, diamond possesses both excellent hardness and sufficient toughness, ensuring that the cutting edge does not chip during wafer cleaving while ensuring sufficient tool life (the lifespan of high-nitrogen diamond is 3-6 times that of low-nitrogen diamond).

[0009] The cutting edge of the blade has an isosceles triangular cross-section, with a vertex angle of 60°±0.5° at the blade tip. This isosceles triangular cross-section design has significant technical implications: when splitting wafers, the pressure on both sides of the isosceles triangular cutting edge is consistent, reducing the likelihood of chipping due to uneven loading and extending the cutting edge's lifespan. The blade's included angle (vertex angle) of 60°±0.5° represents the optimal balance between blade sharpness and edge strength—a smaller included angle results in a sharper blade but relatively lower edge strength and a shorter lifespan; a larger included angle increases splitting resistance, affecting splitting quality and efficiency. The 60° isosceles triangular structure maintains sufficient sharpness while preserving edge strength, achieving a balance between splitting quality and tool life.

[0010] The passivation value of the cutting edge is less than 20 nm (detected using a super depth-of-field laser microscope under 2000x magnification). Edge passivation (or edge blunt radius) is a key indicator of tool sharpness, referring to the radius of the arc at the cutting edge tip. The magnitude of the edge passivation value directly determines the cutting performance and lifespan of the tool. Testing and analysis show that when the edge passivation value is greater than 100 nm, the tool has virtually no lifespan; when the edge passivation value is between 50-80 nm, the tool lifespan is only 200-500 cycles; while when the edge passivation value is less than 20 nm, the tool lifespan can reach 800-900 cycles. This invention controls the edge passivation value to within 20 nm, bringing the tool lifespan close to advanced international levels (foreign tool lifespan is approximately 1000 cycles). Simultaneously, the extremely low passivation value means the cutting edge has extremely high sharpness, enabling precise scratches to be formed on the wafer surface, reducing edge chipping and cracking during the cleaving process.

[0011] The bevel width of the blade is 0.2-0.3 mm, and the surface roughness is <Ra0.01. The bevel width (i.e., the grinding surfaces on both sides of the blade) is set at 0.2-0.3 mm to facilitate grinding a higher quality surface finish and cutting edge quality. The surface roughness is controlled below Ra0.01 because when the roughness exceeds Ra0.01, the blade will exhibit a serrated appearance under 5000x magnification, causing chipping at the cut to exceed the set value of 0.0008 mm (800 nm). Nanoscale surface roughness ensures the microscopic smoothness of the blade, thereby ensuring the smoothness and consistency of the splitting cut.

[0012] The straightness of the cutting edge is less than 0.002 mm. The straightness of the cutting edge is a key parameter for ensuring the accuracy of the splitting trajectory—when the straightness of the cutting edge is greater than 0.002 mm, the cut surface will bend, leading to chip defects and scrap. This invention uses an ultra-precision grinding process to control the straightness of the cutting edge within 0.002 mm, ensuring the straightness of the splitting trajectory and the flatness of the cut surface.

[0013] The overall length of the cutter body is 2.6 mm, and the thickness is 0.26-0.3 mm. This size specification is specifically designed for the cleaving of single-crystal silicon wafers, ensuring that the cutter body has sufficient structural strength while adapting to the narrow space requirements of the wafer dicing groove.

[0014] The tool holder is made of non-magnetic material and has a mounting groove in which the tool body is securely mounted. The use of non-magnetic material for the tool holder is primarily to avoid unnecessary magnetic fields affecting the chip circuitry during wafer chip processing. The non-magnetic tool holder effectively prevents magnetic fields from interfering with the internal circuitry of the chip during processing, ensuring that the chip's electrical performance remains unaffected.

[0015] Furthermore, the mounting groove has a width of 0.26-0.3mm, the cutter body is tightly installed in the mounting groove, and the parallelism between the cutter body and the tool holder base is 0.005mm. The mounting groove is machined using a precision five-axis machining center, and the groove width is precisely matched with the cutter body thickness to ensure a tight fit between the diamond cutter body and the tool holder without gaps. The 0.005mm parallelism ensures the positional accuracy of the cutter body after installation, avoiding deviations in the splitting trajectory due to installation errors.

[0016] Furthermore, a mounting hole is provided in the middle of the tool holder for mounting the tool. Preferably, the mounting hole is a UNC2-56 American standard threaded hole, which facilitates quick installation and precise positioning of the tool on the splitting equipment.

[0017] Furthermore, the tool holder is made of SUS410 stainless steel. SUS410 stainless steel has good mechanical strength and corrosion resistance, and is also a non-magnetic material, meeting the requirements for a non-magnetic environment during wafer processing.

[0018] Preferably, the overall dimensions of the tool holder are 3.0 mm in length, 3.0 mm in width, and 9.5 mm in height. This size specification facilitates the clamping and operation of the tool on the splitting equipment, while ensuring that the tool holder has sufficient structural rigidity.

[0019] This invention also provides a method for manufacturing a nanoscale diamond cleaving tool for single-crystal silicon wafers, comprising: Preparation of CVD diamond; The prepared CVD diamond material is cut into a blank of predetermined size; Based on the blade blank, the blade edge is ground into an isosceles triangular cross section with a vertex angle of 60°±0.5° and a bevel width of 0.2-0.3mm; and then finely ground to make the surface roughness of the blade edge reach Ra0.01 or less and the straightness reach 0.002mm or less. The ground blade is then subjected to precision passivation treatment to reduce the passivation value to less than 20nm. SUS410 stainless steel is machined into a tool holder blank of a predetermined size. A precision five-axis machining center is used to machine a mounting groove on the head of the tool holder, with a groove width of 0.26-0.3mm. Install the ground blade into the mounting slot of the handle, ensuring that the parallelism between the blade and the handle base reaches 0.005mm.

[0020] Furthermore, it also includes: A comprehensive inspection is conducted on the assembled cutting tools, including cutting edge angle inspection, dulling value inspection, surface roughness inspection, straightness inspection, and parallelism inspection of the tool body and tool holder.

[0021] Furthermore, the ground blade undergoes a precision passivation process, including: After grinding, a micro-melting layer with a thickness of 0.1-0.5μm is formed on the cutting edge using a femtosecond laser.

[0022] Compared with the prior art, the beneficial effects of the present invention are as follows: 1. Breaking the foreign technology monopoly: The nanoscale cleaving diamond tool for single-crystal silicon wafers provided by this invention, through independently developed CVD diamond material, optimized blade structure and precise manufacturing process, has realized the localization of nanoscale cleaving tools for single-crystal silicon wafers, and solved the problem of long-term foreign monopoly in this field.

[0023] 2. Extremely high cutting edge precision: By controlling the blade dulling value to within 20nm, the surface roughness to below Ra0.01, and the straightness to within 0.002mm, nanometer-level cutting edge precision is achieved, ensuring the flatness and consistency of the splitting cut and avoiding edge chipping defects caused by micro-serrations.

[0024] 3. Excellent tool life: By precisely controlling the nitrogen content of CVD diamond (8-10ppm) to obtain high-toughness materials, combined with optimized cutting edge angle (60° isosceles triangle) and extremely small passivation value (<20nm), the tool life reaches 800-900 cycles, which is close to the advanced level abroad (1000 cycles).

[0025] 4. Uniform stress distribution: The cutting edge adopts an isosceles triangular cross-section design with a vertex angle of 60°±0.5°. When splitting the wafer, the stress on both sides is consistent, avoiding edge chipping caused by unbalanced loading and further extending the tool's service life.

[0026] 5. No magnetic interference: The tool holder is made of non-magnetic materials such as SUS410 stainless steel, which effectively avoids the interference of magnetic fields on the wafer chip circuit during processing and ensures the electrical performance of the chip.

[0027] 6. High-precision installation: The mounting groove, machined by a precision five-axis machining center, achieves a tight fit between the diamond cutter body and the tool holder without any clearance. The parallelism of 0.005mm ensures the installation accuracy of the tool and the accuracy of the splitting trajectory. Attached Figure Description

[0028] Figure 1 This is a three-dimensional structural schematic diagram of the nanoscale diamond cleaving tool for single-crystal silicon wafers according to the present invention; Figure 2 This is a three-dimensional structural diagram of the blade body of the present invention; Figure 3 This is a front view schematic diagram of the blade body of the present invention; Figure 4 This is a three-dimensional structural diagram of the knife handle of the present invention.

[0029] Illustration: 10. Blade body; 101. Blade edge; 102. Blade tip; 20. Tool holder; 201. Mounting slot; 202. Mounting hole. Detailed Implementation

[0030] To make the objectives, technical solutions, and advantages of this invention clearer, the invention will be further described in detail below with reference to the accompanying drawings and embodiments. It should be understood that the specific embodiments described herein are merely illustrative and not intended to limit the invention.

[0031] In the description of this invention, it should be noted that the terms "center", "upper", "lower", "left", "right", "vertical", "horizontal", "inner", "outer", etc., indicate the orientation or positional relationship based on the orientation or positional relationship shown in the accompanying drawings. They are only for the convenience of describing this invention and simplifying the description, and do not indicate or imply that the device or element referred to must have a specific orientation, or be constructed and operated in a specific orientation. Therefore, they should not be construed as limitations on this invention.

[0032] Furthermore, in the description of this invention, unless otherwise explicitly specified and limited, the terms "installation," "connection," "linking," etc., should be interpreted broadly. For example, they can refer to a fixed connection, a detachable connection, or an integral connection; they can refer to a mechanical connection or an electrical connection; they can refer to a direct connection or an indirect connection through an intermediate medium; and they can also refer to the internal connection of two components. Those skilled in the art can understand the specific meaning of the above terms in this invention based on the specific circumstances.

[0033] Furthermore, the technical features involved in the different embodiments of the present invention described below can be combined with each other as long as they do not conflict with each other.

[0034] Example 1 like Figure 1 As shown, an embodiment of the present invention provides a diamond cleaver for nanoscale cleaving of single-crystal silicon wafers, comprising a cutter body 10 and a shank 20.

[0035] Specifically, the blade body 10 has a rectangular plate structure and is manufactured using CVD diamond (chemical vapor deposition diamond), with a nitrogen content of 8-10 ppm. CVD diamond can be prepared using chemical vapor deposition techniques such as hot filament CVD (HFCVD) or microwave plasma CVD (MPCVD). During the deposition process, by precisely controlling the nitrogen source content in the reaction gas (such as the amount of nitrogen or nitrogen-containing precursors added), the nitrogen content in the diamond can be controlled within the target range of 8-10 ppm. Precise control of the nitrogen content can be verified by secondary ion mass spectrometry (SIMS) or infrared absorption spectroscopy after growth.

[0036] like Figures 2-3 As shown, the blade 101 of the blade body 10 has an isosceles triangular cross-section, with the vertex angle A of the isosceles triangle at the blade tip 102 being 60°±0.5°. The bevel width C of the blade 101 (i.e., the width of the grinding surfaces on both sides of the blade) is 0.2-0.3 mm. The surface roughness of the blade 101 is less than Ra0.01, and the straightness is less than 0.002 mm. The passivation value of the blade 101 is less than 20 nm (detected under 2000x magnification of a super depth-of-field laser microscope).

[0037] The overall length L of the blade body 10 is 2.6mm, and the thickness D is 0.26-0.3mm.

[0038] Furthermore, such as Figure 4 As shown, the tool holder 20 has a cylindrical structure and is made of a non-magnetic material. In this embodiment, the tool holder 20 is preferably made of SUS410 stainless steel. SUS410 stainless steel is a martensitic stainless steel with good mechanical strength and corrosion resistance. It is also a non-magnetic material and will not generate a magnetic field that could affect the chip circuitry, thus meeting the requirements for a non-magnetic environment during wafer fabrication.

[0039] The tool holder 20 is provided with a mounting groove 201, the groove width B of which is 0.26-0.3mm, precisely matching the thickness of the tool body 10. The tool body 10 is tightly installed in the mounting groove 201, ensuring that the parallelism between the tool body 10 and the base of the tool holder 20 is 0.005mm or higher. The mounting groove 201 is machined using a precision five-axis machining center to ensure groove width and positional accuracy. If the parallelism is out of tolerance, the tool will cause cutting edge deviation when installed on the pyrolysis machine, resulting in uneven cuts and wafer scrap.

[0040] The tool holder 20 has a mounting hole 202 in the middle for mounting the tool on the splitting equipment. In this embodiment, the mounting hole 202 is preferably a UNC2-56 American standard threaded hole, which facilitates compatibility with the mounting interface of standard splitting equipment.

[0041] The overall dimensions of the handle 20 are preferably 3.0 mm in length, 3.0 mm in width, and 9.5 mm in height.

[0042] Furthermore, the manufacturing method of the nanoscale cleaving diamond tool for single-crystal silicon wafers in this embodiment includes the following steps: Step 1: CVD Diamond Preparation: Diamond materials with a nitrogen content of 8-10 ppm are prepared using chemical vapor deposition (e.g., microwave plasma CVD). By precisely controlling deposition parameters (including reactant gas composition, deposition temperature, and pressure), especially the amount of nitrogen source added, the nitrogen content in the diamond is stabilized within the range of 8-10 ppm. After preparation, the nitrogen content is detected and verified using infrared absorption spectroscopy or secondary ion mass spectrometry.

[0043] Step 2, Tool cutting and shaping: The prepared CVD diamond material is cut into tool blanks of predetermined size, with an overall length of 2.6 mm and a thickness of 0.26-0.3 mm.

[0044] Step 3, Edge Grinding: The blade is ground using an ultra-precision diamond grinding machine. First, the blade is ground into an isosceles triangular cross-section with a vertex angle of 60°±0.5° and a bevel width of 0.2-0.3mm. Then, fine grinding is performed to achieve a surface roughness of Ra 0.01 or less and a straightness of less than 0.002mm. During the grinding process, grinding parameters (including grinding pressure, rotation speed, and feed rate) must be strictly controlled to avoid damage to the cutting edge due to improper grinding.

[0045] Step 4: Edge Passivation Treatment: The ground blade undergoes precision passivation treatment to reduce the passivation value to less than 20nm. Passivation can be achieved using ion beam polishing technology, which utilizes an argon ion beam to remove microscopic serrations at the atomic level. Ion beam polishing allows for precise control of the removal amount, stabilizing the passivation value within 20nm. After passivation, the passivation value is measured using a super-depth-of-field laser microscope at 2000x magnification.

[0046] Step 5, Tool Holder Machining: The tool holder is machined using SUS410 stainless steel. First, the SUS410 stainless steel is machined into a tool holder blank of the predetermined dimensions (length 3.0mm, width 3.0mm, height 9.5mm). Then, a mounting groove with a width of 0.26-0.3mm is machined on the head of the tool holder using a precision five-axis machining center. UNC2-56 American standard threaded mounting holes are machined in the middle of the tool holder.

[0047] Step Six: Assembling the Tool Body and Handle: Install the ground tool body into the mounting slot of the handle, ensuring a tight fit without gaps. Adjust the tool body's position so that the parallelism between the tool body and the handle base reaches 0.005mm. The tool body can be secured in the mounting slot using methods such as bonding or mechanical clamping.

[0048] Step 7, Final Inspection: Conduct a comprehensive inspection of the assembled cutting tool, including cutting edge angle inspection (60°±0.5°), passivation value inspection (<20nm), surface roughness inspection (<Ra0.01), straightness inspection (<0.002mm), and parallelism inspection between the tool body and the tool holder (0.005mm), to ensure that all parameters meet the design requirements.

[0049] Furthermore, the working principle of the nanoscale cleaving diamond tool for single-crystal silicon wafers provided by the present invention is as follows: The cutting tool is mounted on the cleaving equipment through the mounting hole 202 in the middle of the tool holder 20. During cleaving, the cutting tip 102 of the tool moves along a predetermined cutting trajectory on the wafer surface while applying appropriate pressure. When the 60° isosceles triangular cross-section of the cutting edge 101 contacts the wafer surface, the two inclined surfaces evenly transmit the pressure to the wafer surface, generating stress concentration inside the wafer and forming a controllable dark crack. Subsequently, the wafer is cleaved into individual chips along the cleaving marks using the cleaving process.

[0050] In this process, the extremely low passivation value (<20nm) of the cutting edge 101 ensures that the cutting edge can contact the wafer surface with extremely high sharpness, forming precise scratches; the extremely low surface roughness (<Ra0.01) ensures the microscopic flatness of the contact surface between the cutting edge and the wafer, avoiding edge chipping caused by microscopic serrations; and the excellent straightness (<0.002mm) ensures the straightness of the scratch trajectory and the flatness of the cut surface. At the same time, the nitrogen content of 8-10ppm in the CVD diamond material gives the cutting edge sufficient toughness and wear resistance, making the cutting edge less prone to chipping during repeated splitting, thus ensuring a long tool life.

[0051] Example 2 The difference between this embodiment and Embodiment 1 lies in the material of the tool holder and the machining method of the mounting groove.

[0052] In this embodiment, the tool holder 20 is made of a non-magnetic ceramic material. Non-magnetic ceramic materials (such as zirconia ceramic) have excellent insulation and non-magnetic properties, which can further avoid electromagnetic interference to the wafer chip circuitry during processing. At the same time, ceramic materials have high hardness and good wear resistance, which can ensure the dimensional stability of the tool holder during long-term use.

[0053] The mounting groove 201 is machined using precision electrical discharge machining (EDM). For ceramic tool holders, precision EDM can achieve high-precision groove width control and excellent internal surface quality, ensuring that the groove width accuracy of the mounting groove 201 reaches 0.26-0.3mm, and the internal surface roughness meets the requirements for a tight fit with the tool body 10.

[0054] The remaining structure, parameters and manufacturing methods are the same as in Example 1, and will not be repeated here.

[0055] Example 3 The difference between this embodiment and Embodiment 1 lies in the method of dulling the blade.

[0056] In this embodiment, the passivation treatment of the cutting edge 101 employs femtosecond laser micro-melting passivation technology. A micro-melted layer (approximately 0.1-0.5 μm thick) is formed on the cutting edge using a femtosecond laser, reducing edge brittleness and improving resistance to chipping. Femtosecond lasers possess extremely high peak power and extremely short pulse widths, enabling precise material removal and micro-melting within a very small heat-affected zone, avoiding thermal damage to the area surrounding the cutting edge. After femtosecond laser micro-melting passivation, the passivation value of the cutting edge can be stably controlled within 20 nm, while the edge's resistance to chipping is further enhanced.

[0057] The remaining structure, parameters and manufacturing methods are the same as in Example 1, and will not be repeated here.

[0058] Example 4 The difference between this embodiment and Embodiment 1 lies in the specific values ​​of the blade angle and the bevel width.

[0059] In this embodiment, the vertex angle A of the isosceles triangle of the cutting edge 101 is 60° (i.e., 60°±0°), and the bevel width C is 0.25mm. This specific value is the optimal parameter combination verified by a large number of experiments: the 60° vertex angle achieves the best balance between sharpness and cutting edge strength; the 0.25mm bevel width ensures sufficient grinding area to obtain excellent surface quality, while avoiding the processing difficulties caused by an excessively large bevel width.

[0060] Tests showed that the tool in this embodiment could stably control the chipping width of the cut within 0.0008mm (800nm) during the cleaving of single-crystal silicon wafers, and the tool life reached 850-900 cycles, which is comparable to the performance of similar advanced products abroad.

[0061] The remaining structure, parameters and manufacturing methods are the same as in Example 1, and will not be repeated here.

[0062] Furthermore, the performance of the cutting tools of Embodiments 1 to 4 of the present invention was compared with that of existing imported cutting tools, and the results are shown in the table below:

[0063] As shown in the table above, the nanoscale cleaving diamond tool for single-crystal silicon wafers provided by this invention has reached or is close to the level of imported tools in all key performance indicators, and can realize the domestic substitution of nanoscale cleaving tools for single-crystal silicon wafers.

[0064] Furthermore, the nanoscale cleaving diamond tool for single-crystal silicon wafers provided by this invention can be widely applied to the cleaving process of single-crystal silicon wafers in the semiconductor manufacturing field, and is particularly suitable for high-precision cleaving of large-size single-crystal silicon wafers such as 12-inch and 8-inch wafers. This tool can also be used for precision scribing and cleaving of other hard and brittle materials (such as ceramics, glass, gallium arsenide, etc.), demonstrating good industrial applicability and promotional value.

[0065] The above embodiments are merely preferred embodiments of the present invention and should not be construed as limiting the scope of protection of the present invention. Any non-substantial changes and substitutions made by those skilled in the art based on the present invention shall fall within the scope of protection claimed by the present invention.

Claims

1. A diamond cleaver for nanoscale cleaving of single-crystal silicon wafers, characterized in that, include: The blade body is made of CVD diamond with a nitrogen content of 8-10ppm. The blade cross-section of the blade body is an isosceles triangle structure, and the vertex angle of the isosceles triangle at the blade tip is 60°±0.5°. The passivation value of the blade is less than 20nm. The bevel width of the blade is 0.2-0.3 mm, and the surface roughness is <Ra0.01; The overall length of the blade is 2.6 mm and the thickness is 0.26-0.3 mm; The straightness of the blade is less than 0.002 mm; The handle is made of non-magnetic material and has a mounting groove, in which the blade is securely mounted.

2. The nanoscale diamond cleaving tool for single-crystal silicon wafers as described in claim 1, characterized in that, The width of the mounting groove is 0.26-0.3mm, the blade body is tightly installed in the mounting groove, and the parallelism between the blade body and the blade holder base is 0.

005.

3. The nanoscale diamond cleaving tool for single-crystal silicon wafers as described in claim 1, characterized in that, The tool holder has a mounting hole in the middle for mounting the tool.

4. The nanoscale diamond cleaving tool for single-crystal silicon wafers as described in claim 3, characterized in that, The handle is made of SUS410 stainless steel.

5. A method for manufacturing a nanoscale diamond cleaving tool for single-crystal silicon wafers, characterized in that, include: Preparation of CVD diamond; The prepared CVD diamond material is cut into a blank of predetermined size; Based on the blade blank, the blade edge is ground into an isosceles triangular cross section with a vertex angle of 60°±0.5° and a bevel width of 0.2-0.3mm; and then finely ground to make the surface roughness of the blade edge reach Ra0.01 or less and the straightness reach 0.002mm or less. The ground blade is then subjected to precision passivation treatment to reduce the passivation value to less than 20nm. SUS410 stainless steel is machined into a tool holder blank of a predetermined size. A precision five-axis machining center is used to machine a mounting groove on the head of the tool holder, with a groove width of 0.26-0.3mm. Install the ground blade into the mounting slot of the handle, ensuring that the parallelism between the blade and the handle base reaches 0.005mm.

6. The method for manufacturing a nanoscale cleaving diamond tool for single-crystal silicon wafers according to claim 5, characterized in that, Also includes: A comprehensive inspection is conducted on the assembled cutting tools, including cutting edge angle inspection, dulling value inspection, surface roughness inspection, straightness inspection, and parallelism inspection of the tool body and tool holder.

7. The method for manufacturing a nanoscale cleaving diamond tool for single-crystal silicon wafers according to claim 5, characterized in that, The ground blade undergoes precision passivation treatment, including: After grinding, a micro-melting layer with a thickness of 0.1-0.5μm is formed on the cutting edge using a femtosecond laser.

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