Multi-cavity tiled array, gas cell bulb array, gas cell bulb and methods of manufacture

Abstract

The application relates to a multi-cavity splicing array, a gas chamber glass shell array, a gas chamber glass shell and a preparation method. The multi-cavity splicing array comprises a first splicing body and a splicing layer. The first splicing body is provided with at least two first splicing bodies which are arranged at intervals along a first direction X. A splicing layer is arranged between any two adjacent first splicing bodies. The splicing layer comprises at least two second splicing bodies which are arranged at intervals along a second direction Y. The first direction X and the second direction Y are at an angle to each other. Each second splicing body is fixedly connected with two adjacent first splicing bodies. Any two adjacent second splicing bodies in any splicing layer and the corresponding two adjacent first splicing bodies enclose a cavity. The number of the cavities is at least two. The production efficiency and product consistency are improved, and the production cost is reduced.

Description

Technical Field

[0001] This application relates to the field of atomic gas cell technology, and in particular to a multi-cavity splicing array, a gas cell glass shell array, a gas cell glass shell, and a method for preparing them. Background Technology

[0002] Alkali metal atom gas cells are core components of atomic instruments such as atomic magnetometers, nuclear magnetic resonance gyroscopes, and atomic clocks, and their performance directly affects the accuracy of these instruments.

[0003] Alkali metal atom gas chamber glass shells are containers for alkali metal elements and buffer gases. Traditional alkali metal gas chambers are mostly prepared by glass melt blowing and machining methods, which have problems such as poor airtightness, low shape accuracy, difficulty in miniaturization, low consistency, and high technical requirements for operators, making it difficult to achieve miniaturization and mass production of alkali metal atom gas chamber glass shells. In addition, traditional glass gas chambers have a gas handle on the glass shell for filling alkali metal and buffer gas. After filling and sealing, a tail tube of several millimeters is still retained, which hinders the further miniaturization of related sensors. In nuclear magnetic resonance gyroscopes, the presence of the tail tube increases the quadrupole moment frequency shift of atomic nuclei spin, affecting device performance.

[0004] To meet the demands of miniaturization, chip-based design, integration, and high performance in sensors, incorporating micro-nano technology into alkali metal cell fabrication has become a development trend. Conventional micro-nano cells employ a "glass-silicon-glass" structure, using a perforated silicon wafer as the intermediate layer. This typically provides only one pair of optical windows for light transmission, failing to meet the practical requirements for multiple orthogonal beams. While replacing the perforated silicon wafer with a perforated glass wafer could theoretically provide two pairs of optical windows, polishing the internal cavity is difficult to achieve the required level, and the polishing process is costly. Summary of the Invention

[0005] Therefore, it is necessary to provide a multi-cavity splicing array that can be used for mass production of gas chamber glass shells with low production cost.

[0006] This application provides a multi-cavity splicing array, including a first splicing body and a splicing layer. The first splicing body is provided in at least two and is arranged at intervals along a first direction X. The splicing layer is provided between any two adjacent first splicing bodies. The splicing layer includes at least two second splicing bodies and is arranged at intervals along a second direction Y. The first direction X and the second direction Y form an angle with each other. Each second splicing body is fixedly connected to two adjacent first splicing bodies. Any two adjacent second splicing bodies in any splicing layer and the corresponding two adjacent first splicing bodies form a cavity. The number of cavities is at least two.

[0007] In one embodiment, the first splicing body and the second splicing body have equal lengths along the third direction Z, such that the two end faces of the multi-cavity splicing array are parallel along the third direction Z, and the first direction X, the second direction Y, and the third direction Z are perpendicular to each other.

[0008] In one embodiment, the number of the first splicing bodies is three or more, the two outermost first splicing bodies are defined as the first glass slides, the first splicing body between the two first glass slides is defined as the second glass slide, and the length of the first glass slide is greater than the length of the second glass slide along the first direction X.

[0009] In one embodiment, any one of the splicing layers includes three or more second splicing bodies, the two outermost second splicing bodies are defined as first positioning elements, the second splicing body between the two first positioning elements is defined as a second positioning element, and along the second direction Y, the length of the first positioning element is greater than the length of the second positioning element.

[0010] This application also provides a preparation method for preparing the multi-cavity spliced ​​array as described above, comprising the following preparation steps:

[0011] Provide an appropriate number of first and second splice bodies according to the specifications of the target multi-cavity splicing array;

[0012] The surfaces of the first and second splicing bodies used to enclose the cavity are precision polished;

[0013] The first and second splicing bodies are assembled and fixed to form a multi-cavity splicing array.

[0014] In one embodiment, before precision polishing the first and second splicing bodies, the first and second splicing bodies are cut so that their dimensions meet the assembly requirements of the multi-cavity splicing array.

[0015] In one embodiment, during the assembly and fixing of the first splice body and the second splice body, the first splice body and the second splice body are cured by bonding process to form a multi-cavity splice array, and the cured multi-cavity splice array is subjected to annealing and polishing treatment.

[0016] This application also provides a gas chamber glass shell array, including two glass wafers, tail tubes, and a multi-cavity splicing array as described above. Multiple tail tubes are provided. The two glass wafers are respectively fixed at both ends of the multi-cavity splicing array to seal the cavities of the multi-cavity splicing array. One of the glass wafers is a perforated glass plate with multiple first holes. The first holes correspond to the cavities. Multiple tail tubes are fixed at the end of the perforated glass plate away from the multi-cavity splicing array, and each tail tube is connected to one of the first holes.

[0017] This application also provides a preparation method for preparing the above-mentioned gas-cell glass-shell array, comprising the following preparation steps:

[0018] It provides a multi-cavity splicing array and two glass wafers;

[0019] A perforated glass slide is formed by drilling holes in one of the glass wafers. The first hole on the perforated glass slide corresponds to a cavity in the multi-cavity splicing array. The other glass wafer is a non-perforated glass slide.

[0020] The tail tube is bonded to the perforated glass slide through a bonding process at the first hole of the perforated glass slide, and the first hole is connected to the tail tube.

[0021] Polish the connecting surface of the perforated glass slide that is away from the tail tube;

[0022] The connecting surface of the perforated glass slide is bonded to the multi-cavity splicing array. The first hole of the perforated glass slide is connected to the chambers in the multi-cavity splicing array one by one. The non-perforated glass slide is bonded to the side of the multi-cavity splicing array away from the perforated glass slide to seal the chambers, thus obtaining an air-cell glass shell array.

[0023] This application also provides a gas chamber glass shell array, including two silicon wafers, two glass wafers, and a multi-cavity splicing array as described above. Each silicon wafer has multiple second holes. The two silicon wafers are respectively fixed at both ends of the multi-cavity splicing array. The second holes in the silicon wafers correspond to the cavities. A glass wafer is fixed at the end of the silicon wafer away from the multi-cavity splicing array to seal the cavities.

[0024] This application also provides a preparation method for preparing the gas-cell glass-shell array as described above, comprising the following preparation steps:

[0025] It provides a multi-cavity splicing array, two glass wafers, and two silicon wafers;

[0026] Multiple second holes are formed on both silicon wafers, and the second holes correspond to the cavities in the multi-cavity splicing array.

[0027] Two silicon wafers are bonded to each other on both sides of the multi-cavity splicing array, and the second holes on the silicon wafers are connected to the cavities of the multi-cavity splicing array one by one.

[0028] Two glass wafers are bonded to the side of two silicon wafers away from the multi-cavity splicing array to seal the cavities, thus obtaining a gas-cell glass shell array.

[0029] This application also provides a preparation method for preparing a gas chamber glass shell, comprising the following preparation steps:

[0030] The air-cell glass shell array is cut to form an air-cell glass shell with a single chamber, and the air-cell glass shell array is prepared by the preparation method described above;

[0031] The shape of the glass shell of the gas chamber with a single cavity is ground and polished.

[0032] This application also provides a gas chamber glass shell, which is prepared using the preparation method described above.

[0033] Compared with existing technologies, the multi-cavity splicing array provided in this application has at least the following advantages: The multi-cavity splicing array includes a first splicing body and a splicing layer. The splicing layer includes multiple second splicing bodies. The first and second splicing bodies are spliced ​​together to enclose multiple cavities. Subsequently, the multi-cavity splicing array is cut to separate each cavity individually for mass production of gas chamber glass shells, improving production efficiency and product consistency. Furthermore, the multi-cavity splicing array is formed by splicing the first and second splicing bodies. The first and second splicing bodies can be polished before splicing to meet the requirements for subsequent use in gas chamber glass shells, eliminating the need for polishing the inner cavity of the gas chamber glass shell, thus reducing production costs. Attached Figure Description

[0034] To more clearly illustrate the technical solutions in the embodiments of this application or the conventional technology, the drawings used in the description of the embodiments or the conventional technology will be briefly introduced below. Obviously, the drawings described below are only some embodiments of this application. For those skilled in the art, other drawings can be obtained based on these drawings without creative effort.

[0035] Figure 1 This is a perspective view of a multi-cavity splicing array according to an embodiment of this application;

[0036] Figure 2 This is a front view of a multi-cavity splicing array along the third direction Z according to an embodiment of this application;

[0037] Figure 3 for Figure 2 A magnified view of a portion of point A in the middle;

[0038] Figure 4 This is an exploded front view of a multi-cavity splicing array along the third direction Z, according to an embodiment of this application.

[0039] Figure 5 This is a schematic diagram of the cutting path of a multi-cavity splicing array according to an embodiment of this application;

[0040] Figure 6 This is a schematic diagram of the cutting path for a multi-cavity splicing array according to another embodiment of this application;

[0041] Figure 7 This is a perspective view of a gas chamber glass shell array according to an embodiment of this application;

[0042] Figure 8 This is a three-dimensional exploded view of a gas chamber glass shell array according to an embodiment of this application;

[0043] Figure 9 This is a perspective view of a gas chamber glass shell array according to another embodiment of this application;

[0044] Figure 10 This is an exploded view of a gas chamber glass array according to another embodiment of this application;

[0045] Figure 11 This is a perspective view of the air chamber glass shell according to an embodiment of this application;

[0046] Figure 12 This is a perspective view of the air chamber glass shell according to another embodiment of this application.

[0047] Reference numerals: 100, Multi-cavity splicing array; 101, First splicing body; 101a, First glass slide; 101b, Second glass slide; 102, Splicing layer; 103, Second splicing body; 103a, First positioning element; 103b, Second positioning element; 104, Chamber; 1041, Polished surface; 200, Glass wafer; 201, Perforated glass slide; 202, First hole; 203, Non-perforated glass slide; 204, Connecting surface; 300, Tail tube; 400, Silicon wafer; 402, Second hole; 500, Gas chamber glass shell array; 600, Gas chamber glass shell; 700, Cutting path. Detailed Implementation

[0048] To make the above-mentioned objectives, features, and advantages of this application more apparent and understandable, the specific embodiments of this application are described in detail below with reference to the accompanying drawings. Many specific details are set forth in the following description to provide a thorough understanding of this application. However, this application can be implemented in many other ways different from those described herein, and those skilled in the art can make similar modifications without departing from the spirit of this application. Therefore, this application is not limited to the specific embodiments disclosed below.

[0049] It should be noted that when a component is referred to as being "fixed to" or "set on" another component, it can be directly on the other component or there may be an intermediate component. When a component is considered to be "connected" to another component, it can be directly connected to the other component or there may be an intermediate component present. The terms "vertical," "horizontal," "upper," "lower," "left," "right," "side," "top," "bottom," and similar expressions used in this application's specification are merely for describing various exemplary structural parts and elements of this application. However, their use herein is for illustrative purposes only and is determined based on the exemplary orientations shown in the accompanying drawings, and does not represent the only possible implementation. Since the embodiments disclosed in this application can be arranged in different orientations, these terms indicating orientation are for illustrative purposes only and should not be considered as limitations. For example, "upper" and "lower" are not necessarily limited to directions opposite to or consistent with the direction of gravity.

[0050] Furthermore, the terms "first" and "second" are used for descriptive purposes only and should not be construed as indicating or implying relative importance or implicitly specifying the number of technical features indicated. Thus, a feature defined as "first" or "second" may explicitly or implicitly include at least one of that feature. In the description of this application, "multiple" means at least two, such as two, three, etc., unless otherwise explicitly specified.

[0051] In this application, unless otherwise expressly specified and limited, "above" or "below" the second feature can mean that the first feature is in direct contact with the second feature, or that the first feature and the second feature are in indirect contact through an intermediate medium. Furthermore, "above," "over," and "on top" the second feature can mean that the first feature is directly above or diagonally above the second feature, or simply indicates that the first feature is at a higher horizontal level than the second feature. "Below," "below," and "under" the second feature can mean that the first feature is directly below or diagonally below the second feature, or simply indicates that the first feature is at a lower horizontal level than the second feature.

[0052] It should be noted that "axial arrangement" means that the overall arrangement direction is along the axial direction, including but not limited to axial extension, and may be at an angle to the axial direction.

[0053] Unless otherwise defined, all technical and scientific terms used in this application have the same meaning as commonly understood by one of ordinary skill in the art to which this application belongs. The terminology used in this application is for the purpose of describing particular embodiments only and is not intended to be limiting of the application. The term "and / or" as used in this application includes any and all combinations of one or more of the associated listed items.

[0054] Please see Figures 1 to 6This application provides a multi-cavity splicing array 100, including first splicing bodies 101 and splicing layers 102. At least two first splicing bodies 101 are arranged at intervals along a first direction X. A splicing layer 102 is provided between any two adjacent first splicing bodies 101. Each splicing layer 102 includes at least two splicing bodies arranged at intervals along a second direction Y. The first direction X and the second direction Y form an angle with each other. Each second splicing body 103 is fixedly connected to two adjacent first splicing bodies 101. Any two adjacent second splicing bodies 103 in any splicing layer 102, together with the corresponding two adjacent first splicing bodies 101, form a cavity 104. The number of cavities 104 is at least two.

[0055] It should be noted that the number of chambers 104 refers to the total number of chambers 104 formed by splicing all the first splicing bodies 101 and the second splicing bodies 103. The multi-chamber splicing array 100 provided in this application forms multiple chambers 104 by splicing the first splicing bodies 101 and the second splicing bodies 103. By cutting the multi-chamber splicing array 100 and separating each chamber 104 independently, and then sealing the chambers 104 with silicon wafers 400, glass wafers 200, tail tubes 300, etc., a gas chamber glass shell 600 with a single chamber 104 can be formed.

[0056] Cutting the multi-cavity splicing array 100 means cutting the first splicing body 101 and the second splicing body 103, and separating each cavity 104 independently while keeping the first splicing body 101 and the second splicing body 103 spliced ​​together to form a cavity 104.

[0057] For example, please refer to Figure 2 , Figure 4 and Figure 5 The multi-cavity splicing array 100 has five first splicing elements 101, which are arranged at intervals along a first direction X. A splicing layer 102 is provided between any two adjacent first splicing elements 101, meaning there are four splicing layers 102. Each splicing layer 102 contains five second splicing elements 103, which are arranged at intervals along a second direction Y. Preferably, the first direction X and the second direction Y are perpendicular or substantially perpendicular. Each second splicing element 103 is fixedly connected to two adjacent first splicing elements 101, such that any two adjacent second splicing elements 103 in the splicing layer 102, together with their corresponding two adjacent first splicing elements 101, form a cavity 104.

[0058] Understandably, this configuration creates four chambers 104 between two adjacent first splicing bodies 101 and the splicing layer 102 between them, resulting in a total of sixteen chambers 104 in the multi-chamber splicing array 100. By cutting the multi-chamber splicing array 100 and combining it with silicon wafers 400, glass wafers 200, tailpipes 300, etc., sixteen gas chamber glass shells 600 can be formed, enabling mass production of the gas chamber glass shells 600 and improving production efficiency and product consistency.

[0059] In this embodiment, the cutting path 700 can be adopted as follows: Figure 5 As shown by the red dotted line, the infeed position, the exit position, and the cutting method can be selected and set according to the actual cutting requirements, and this application does not impose any restrictions. In addition, the wall thickness of the independently separated chambers 104 after cutting is uniform, and the wall thickness of each independently separated chamber 104 is the same or substantially the same, to ensure the consistency of mass production of the air chamber glass shell 600.

[0060] In other embodiments, please refer to Figure 6 The multi-cavity splicing array 100 has five first splicing elements 101, which are arranged at intervals along the first direction X. A splicing layer 102 is provided between any two adjacent first splicing elements 101, meaning there are four splicing layers 102. Two splicing layers 102 contain five second splicing elements 103, and the other two splicing layers 102 contain three second splicing elements 103. The second splicing elements 103 in each splicing layer 102 are arranged at intervals along the second direction Y. The first direction X and the second direction Y are perpendicular or substantially perpendicular. For ease of explanation, in this embodiment, the two upper splicing layers 102 are provided with three second splicing bodies 103, and the two lower splicing layers 102 are provided with five second splicing bodies 103. Each second splicing body 103 is fixedly connected to two adjacent first splicing bodies 101, so that any two adjacent second splicing bodies 103 in the splicing layer 102 and the corresponding two adjacent first splicing bodies 101 form a cavity 104.

[0061] Understandably, with this configuration, each of the two upper splicing layers 102 forms two chambers 104 between its two adjacent first splicing bodies 101; and each of the two lower splicing layers 102 forms four chambers 104 between its two adjacent first splicing bodies 101. The entire multi-chamber splicing array 100 will ultimately have twelve chambers 104. By cutting the multi-chamber splicing array 100 and combining it with silicon wafers 400, glass wafers 200, tailpipes 300, etc., twelve gas-chamber glass shells 600 can be formed, enabling mass production of the gas-chamber glass shells 600 and improving production efficiency and product consistency.

[0062] In this embodiment, the cutting path 700 can be as follows: Figure 6 As shown by the red dotted line, similarly, the infeed position, the exit position, and the cutting method can be selected and set according to the actual cutting needs, and this application does not impose any restrictions.

[0063] It is understandable that the number of second splicing bodies 103 set in each splicing layer 102 can be the same or different, and can be designed according to the size and number of chambers 104 that need to be processed.

[0064] In some embodiments of this application, both the first splicing body 101 and the second splicing body 103 can be made of special glass, such as high borosilicate glass or quartz glass. Generally, the first splicing body 101 and the second splicing body 103 are made of the same material to simplify the production materials of the multi-cavity splicing array 100.

[0065] In some embodiments of this application, the number of chambers 104 is 4 to 25. Specifically, in the multi-cavity splicing array 100, the number of chambers 104 formed by splicing the first splicing body 101 and the second splicing body 103 can be 4, 7, 10, 13, 16, 19, 22, 25, or any integer number from 4 to 25.

[0066] Understandably, the more chambers 104 in the multi-cavity splicing array 100, the higher the degree of mass production of the subsequent air chamber glass shell 600, and the higher the production efficiency and product consistency. However, this increases the splicing difficulty of the first splice body 101 and the second splice body 103, as well as the difficulty of subsequent cutting and processing. In the embodiments of this application, the number of chambers 104 is 4 to 25, which meets the requirements of mass production, production efficiency, and product consistency, and reduces the splicing difficulty of the first splice body 101 and the second splice body 103, as well as the difficulty of subsequent cutting and processing.

[0067] Please continue reading Figure 1 In some embodiments of this application, the first splicing body 101 and the second splicing body 103 have equal lengths along the third direction Z, so that the two end faces of the multi-cavity splicing array 100 along the third direction Z are parallel, and the first direction X, the second direction Y and the third direction Z are perpendicular to each other.

[0068] Please combine Figure 5 and Figure 6When cutting and separating the chambers 104 in the multi-cavity splicing array 100, the thickness of the multi-cavity splicing array 100 along the third direction Z is the cutting depth. The independently separated chambers 104 are covered along the third direction Z by silicon wafers 400, glass wafers 200, etc. The two ends of the multi-cavity splicing array 100 along the third direction Z are parallel to improve the tightness of the connection after the silicon wafers 400 and glass wafers 200 cover the chambers 104.

[0069] Please continue reading Figures 1 to 6 In some embodiments of this application, the number of first splicing bodies 101 is three or more. The two outermost first splicing bodies 101 are defined as first glass slides 101a, and the first splicing bodies 101 between the two first glass slides 101a are defined as second glass slides 101b. For example, when the number of first splicing bodies 101 is five, along the first direction X, the two outermost first splicing bodies 101 are first glass slides 101a, and the three first splicing bodies 101 between the two first glass slides 101a are all second glass slides 101b.

[0070] In this design, along the first direction X, the length of the first glass slide 101a is greater than the length of the second glass slide 101b. This is understandable because, when cutting the multi-cavity splicing array 100, it needs to be fixed. The design of "the length of the first glass slide 101a being greater than the length of the second glass slide 101b along the first direction X" facilitates clamping and edge following during subsequent cutting processes. Simultaneously, the first glass slide 101a will also be cut during subsequent processing, providing a cutting allowance for it.

[0071] In some embodiments of this application, please refer to Figure 3 , Figure 5 and Figure 6 Along the first direction X, the length of the second glass slide 101b is D2. When the chambers 104 are cut and separated, the cutting path 700 will cut through the second glass slide 101b along the second direction Y, thereby dividing the second glass slide 101b along the first direction X. It can be understood that the length of each part of the divided second glass slide 101b along the first direction X is not less than the wall thickness of the subsequently formed gas chamber shell 600. Specifically, if the wall thickness of the gas chamber shell 600 is W, then the length of the second glass slide 101b along the first direction X must be not less than twice the wall thickness of the gas chamber shell 600, that is, D2 ≥ 2W.

[0072] Considering the consumption of cutting accuracy and cutting allowance, preferably, the length of the second glass slide 101b along the first direction X is greater than twice the wall thickness of the air chamber glass shell 600, that is, D2 > 2W.

[0073] Please continue reading Figures 1 to 6 In some embodiments of this application, any splicing layer 102 includes three or more second splicing bodies 103. The two outermost second splicing bodies 103 are defined as first positioning elements 103a, and the second splicing bodies 103 between the two first positioning elements 103a are defined as second positioning elements 103b. For example, when the number of second splicing bodies 103 is five, along the second direction Y, the two outermost second splicing bodies 103 are first positioning elements 103a, and the three second splicing bodies 103 between the two first positioning elements 103a are all second positioning elements 103b.

[0074] Along the second direction Y, the length of the first positioning member 103a is greater than the length of the second positioning member 103b. It is understandable that when cutting the multi-cavity splicing array 100, it is necessary to fix the multi-cavity splicing array 100. The design of "the length of the first positioning member 103a being greater than the length of the second positioning member 103b along the second direction Y" facilitates clamping and edge following during subsequent cutting processes. Simultaneously, the first positioning member 103a will also be cut during subsequent cutting processes, providing a cutting allowance for the first positioning member 103a during these processes.

[0075] In some embodiments of this application, please refer to Figure 3 , Figure 5 and Figure 6 Along the second direction Y, the length of the second positioning member 103b is D1. When the chambers 104 are cut and separated, the cutting path 700 will cut through the second positioning member 103b along the first direction X, thereby dividing the second positioning member 103b along the second direction Y. It can be understood that the length of the two parts of the divided second positioning member 103b along the second direction Y is not less than the wall thickness of the subsequently formed air chamber glass shell 600. Specifically, if the wall thickness of the air chamber glass shell 600 is W, then the length of the second positioning member 103b along the second direction Y must be not less than twice the wall thickness of the air chamber glass shell 600, that is, D1≥2W.

[0076] Considering the consumption of cutting accuracy and cutting allowance, preferably, the length of the second positioning member 103b along the second direction Y is greater than twice the wall thickness of the air chamber glass shell 600, that is, D1 > 2W.

[0077] This application also provides a preparation method for preparing the multi-cavity splicing array 100 as described in any of the above embodiments, specifically including the following preparation steps:

[0078] First, according to the specifications of the target multi-cavity splicing array 100, a suitable number of first splice elements 101 and second splice elements 103 are provided. For example, please refer to [link to example]. Figure 1 The target multi-cavity splicing array 100 needs to be arranged into sixteen chambers 104 in four rows and four columns. Therefore, five first splicing bodies 101 are needed, four splicing layers 102 are needed, and each splicing layer 102 needs five second splicing bodies 103.

[0079] Next, the surfaces of the first splice body 101 and the second splice body 103 used to enclose the cavity 104 are precision polished. Please refer to [link / reference]. Figure 3 As shown, in the multi-cavity splicing array 100, a chamber 104 has four surfaces. These four surfaces originate from two adjacent second splicing bodies 103 and two corresponding adjacent first splicing bodies 101 in the splicing layer 102. These four surfaces are defined as polished surfaces 1041. After the multi-cavity splicing array 100 is cut to form the gas chamber glass shell 600, these four polished surfaces 1041 become the inner wall surfaces of the atomic gas chamber, satisfying the polishing requirements of the atomic gas chamber for its inner wall surface. Traditionally, the inner wall of a gas chamber glass shell is polished after its formation, which is difficult and requires specialized equipment, resulting in high polishing costs. In this embodiment, the first splicing bodies 101 and the second splicing bodies 103 undergo precision surface polishing before splicing, reducing polishing difficulty and eliminating the need for specialized equipment, thus lowering polishing costs.

[0080] Then, the first splicing body 101 and the second splicing body 103 are assembled and fixed to form a multi-cavity splicing array 100.

[0081] In some embodiments of this application, before precision polishing the first splicing body 101 and the second splicing body 103, the first splicing body 101 and the second splicing body 103 are cut so that the dimensions of the first splicing body 101 and the second splicing body 103 meet the assembly requirements of the multi-cavity splicing array 100.

[0082] For example, please refer to Figure 1 As shown, there are five first splicing bodies 101. The two outermost first splicing bodies 101 are first glass slides 101a, and the three middle first splicing bodies 101 are second glass slides 101b. The five selected first splicing bodies 101 are usually quite long along the first direction X, so the first splicing bodies 101 need to be cut.

[0083] Specifically, the second glass slide 101b is cut along the first direction X to a length slightly greater than twice the wall thickness of the subsequent atomic gas chamber shell. During the subsequent cutting and separation of the multi-cavity splicing array 100 into the separation chamber 104, after the second glass slide 101b is cut and separated along the second direction Y, the length of the separated portion along the first direction X basically meets the wall thickness requirements of the gas chamber shell 600, eliminating or reducing the need for secondary processing and improving production efficiency. The first glass slide 101a is cut along the first direction X to a length greater than that of the second glass slide 101b, sufficient to meet the clamping requirements and cutting allowance requirements during subsequent cutting processes.

[0084] Similarly, please continue to combine Figure 1 As shown, each splicing layer 102 is provided with five second splicing bodies 103. The two outermost second splicing bodies 103 are first positioning members 103a, and the three middle second splicing bodies 103 are second positioning members 103b. The selected second splicing bodies 103 are usually longer along the second direction Y, so the second splicing bodies 103 need to be cut.

[0085] Specifically, the second positioning element 103b is cut along the second direction Y to a length slightly greater than twice the wall thickness of the subsequent atomic gas chamber shell. During the subsequent cutting and separation of the multi-cavity splicing array 100 into the separation chamber 104, after the second positioning element 103b is cut along the first direction X, the length of the separated portion along the second direction Y basically meets the wall thickness requirements of the gas chamber glass shell 600, eliminating or reducing the need for secondary processing and improving production efficiency. The first positioning element 103a is cut along the second direction Y to a length greater than that of the second positioning element 103b, sufficient to meet the clamping requirements and cutting allowance requirements during subsequent cutting processes.

[0086] To ensure cutting quality and consistency, in some embodiments of this application, the cutting process for the first splice 101 and the second splice 103 is the same. For example, a diamond single-wire cutting machine is used, with a cutting speed of 220 r / min and a feed rate of 0.1 mm / min.

[0087] In some embodiments of this application, during the assembly and fixing of the first splicing body 101 and the second splicing body 103, the first splicing body 101 and the second splicing body 103 are cured using a bonding process to form a multi-cavity splicing array 100. The cured multi-cavity splicing array 100 is then annealed and polished. Here, "bonding connection" refers to the process by which materials are bonded through interactions such as chemical bonds, material bonds, or hydrogen bonds, such as photopolymer bonding or high-temperature bonding. During assembly, the first splicing body 101 and the second splicing body 103 are pre-bonded and assembled, and then the pre-bonded multi-cavity splicing array 100 is cured. Pressure is applied to the multi-cavity splicing array 100 at room temperature, and it is cured for 3 to 7 days. The applied pressure can be selected according to the actual assembly requirements, and this application does not limit it.

[0088] The cured multi-cavity spliced ​​array 100 is annealed to promote the condensation reaction of Si-OH groups at the interface, forming Si-O-Si covalent bonds, eliminating interface defects, improving bonding strength, and achieving integrated sealing, ensuring that the bonding surfaces between the glass materials meet the airtightness requirements. Furthermore, the annealing process can eliminate localized stress and improve the long-term stability of the device. In some embodiments of this application, the annealing temperature range is 560℃~800℃, and the annealing holding time ranges from 0.5h to 72h.

[0089] After annealing, the multi-cavity splicing array 100 is shaped according to the dimensions of the silicon wafer 400 and glass wafer 200 to be bonded subsequently. For example, if the silicon wafer 400 and glass wafer 200 are circular, the shape of the multi-cavity splicing array 100 is shaped to match the circular shape of the silicon wafer 400 and glass wafer 200. Then, the two end faces of the multi-cavity splicing array 100 along the third direction Z are precision ground, polished, and cleaned to ensure that the two end faces of the multi-cavity splicing array 100 along the third direction Z meet the surface precision required for anodic bonding or photoresist bonding, so that the multi-cavity splicing array 100 can be subsequently bonded to the silicon wafer 400 and glass wafer 200.

[0090] In some embodiments of this application, if the multi-cavity splicing array 100 is to be anodicly bonded to the silicon wafer 400 and the glass wafer 200, the following requirements must be met: the surface roughness Ra of the end face of the multi-cavity splicing array 100 is <1nm, the total thickness deviation TTV is <5μm, preferably, the total thickness deviation TTV is <1μm, and the parallelism is less than 5μm; if photoresist bonding is to be performed, the following requirements must be met: the surface roughness Ra of the end face of the multi-cavity splicing array 100 is ≤10nm, the surface shape is better than λ / 10 based on the 632.8nm light wavelength λ, the surface reaches level 2 defects and has no penetrating scratches.

[0091] In some embodiments of this application, before the first splice 101 and the second splice 103 are bonded, the first splice 101 and the second splice 103 are cleaned. Specifically, they are cleaned in sequence with an alkaline cleaning agent and deionized water, and then dried with nitrogen gas.

[0092] In some embodiments of this application, during the assembly process, see [reference needed]. Figure 4 The first glass slide 101a, the splicing layer 102, and the second glass slide 101b are assembled sequentially from bottom to top, until the topmost first glass slide 101a is assembled. During the assembly process, a limiting device can be used to ensure assembly accuracy. The limiting device can be selected from existing limiting devices, mechanisms, or structures, and this application does not impose any limitations.

[0093] In the preparation method of the multi-cavity splicing array 100 of this application, the first splicing body 101 and the second splicing body 103 are used to form the polishing surface 1041 of the cavity 104. The equipment adopts a precision single-sided polishing machine. The workpiece to be polished (the first splicing body 101 or the second splicing body 103) is bonded to a grinding disc with a flatness of 0.005 mm. The workpiece is sequentially ground, coarsely polished, and finely polished. In the grinding process, a sintered diamond grinding disc with a particle size of 80 μm to 100 μm and a diamond polishing slurry of 50 μm are used. The processing pressure is 10 kg and the polishing time is 5 min. In the coarse polishing process, a polyurethane polishing pad with a thickness of 3 mm and a cerium oxide polishing slurry of 2 μm are used. The processing pressure is 20 kg, the polishing spindle speed is 50 rpm, and the polishing time is 20 min. In the fine polishing process, a damping cloth with a thickness of 0.5 mm and a cerium oxide polishing slurry of 80 nm are used. The processing pressure is 5 kg, the speed is 30 rpm, and the polishing time is 40 min.

[0094] After the above processes, the polished surface 1041 of the workpiece (first splice 101 or second splice 103) or the surface used for bonding connection meets the surface accuracy required for photopolymer bonding, with a surface roughness Ra≤10nm, a surface shape better than λ / 10 based on the 632.8nm light wavelength λ, and the surface reaches level 2 defects without penetrating scratches.

[0095] Please see Figure 7 and Figure 8This application provides a gas chamber glass shell array 500, which includes two glass wafers 200, tail tubes 300, and a multi-cavity splicing array 100 as described in any of the above embodiments. Multiple tail tubes 300 are provided. The two glass wafers 200 are respectively fixed at both ends of the multi-cavity splicing array 100 to seal the cavities 104 of the multi-cavity splicing array 100. One of the glass wafers 200 is a perforated glass plate 201, which has multiple first holes 202. The first holes 202 correspond to the cavities 104, meaning the number of first holes 202 and cavities 104 is the same. Each first hole 202 is independently and correspondingly connected to one cavity 104. Multiple tail tubes 300 are fixedly provided at the end of the perforated glass plate 201 away from the multi-cavity splicing array 100, and each tail tube 300 is correspondingly connected to one first hole 202. For example, there are sixteen chambers 104 arranged in four rows and four columns, and there are also sixteen first holes 202 on the perforated glass slide 201 arranged in four rows and four columns. When the perforated glass slide 201 is fixed on the multi-cavity splicing array 100, the sixteen first holes 202 are connected to the sixteen chambers 104 one by one.

[0096] This application also provides a preparation method for fabricating the gas chamber glass array 500 with tail tube 300 as described above. Please refer to [link to previous section]. Figure 7 and Figure 8 Specifically, the preparation steps include the following:

[0097] A multi-cavity splicing array 100 and two glass wafers 200 are provided. For example, the provided multi-cavity splicing array 100 has sixteen chambers 104 in four rows and four columns.

[0098] A perforated glass slide 201 is formed by drilling holes in one of the glass wafers 200. The first hole 202 on the perforated glass slide 201 corresponds to the cavity 104 in the multi-cavity splicing array 100. In this embodiment, the number of first holes 202 is the same as the number of cavities 104, both being sixteen. The other glass wafer 200 is a non-perforated glass slide 203. It should be noted that the first hole 202 on the perforated glass slide 201 can be pre-made, that is, the first hole 202 on the perforated glass slide 201 has been pre-drilled before being put into the gas chamber glass shell 600. Of course, the perforated glass slide 201 can also be drilled with the first hole 202 according to the provided multi-cavity splicing array 100.

[0099] The tail tube 300 is bonded to the perforated glass slide 201 at the first hole 202 using a bonding process, and the first hole 202 is connected to the tail tube 300.

[0100] The connecting surface 204 of the perforated glass slide 201, facing away from the tail tube 300, is polished. The connecting surface 204 of the perforated glass slide 201 is bonded to the multi-cavity splicing array 100. The first hole 202 of the perforated glass slide 201 is connected to the corresponding cavity 104 in the multi-cavity splicing array 100. The non-perforated glass slide 203 is bonded to the side of the multi-cavity splicing array 100 away from the perforated glass slide 201 to seal the cavity 104, thus obtaining the gas chamber glass shell array 500. The end face of the non-perforated glass slide 203 bonded to the multi-cavity splicing array 100 also needs to be polished or pre-polished before bonding to the multi-cavity splicing array 100.

[0101] Please see Figure 9 and Figure 10 This application also provides a gas chamber glass shell array 500, including two silicon wafers 400, two glass wafers 200, and a multi-cavity splicing array 100 as described in the above embodiment. Each silicon wafer 400 has multiple second holes 402. The two silicon wafers 400 are respectively fixed at both ends of the multi-cavity splicing array 100. The second holes 402 in the silicon wafers 400 correspond to the chambers 104. A glass wafer 200 is fixed at the end of the silicon wafer 400 away from the multi-cavity splicing array 100 to seal the chambers 104. For example, there are sixteen chambers 104 arranged in four rows and four columns, and there are also sixteen second holes 402 on the silicon wafers 400 arranged in four rows and four columns. When the silicon wafers 400 are fixed on the multi-cavity splicing array 100, the sixteen second holes 402 are connected to the sixteen chambers 104 one by one.

[0102] This application also provides a fabrication method for preparing the gas-cell glass-shell array 500 with silicon wafer 400 and glass wafer 200 as described above. Please refer to [link to previous section]. Figure 9 and Figure 10 Specifically, the preparation steps include the following:

[0103] A multi-cavity splicing array 100, two glass wafers 200, and two silicon wafers 400 are provided. For example, the provided multi-cavity splicing array 100 has sixteen chambers 104 arranged in four rows and four columns.

[0104] Two silicon wafers 400 are bonded to both sides of the multi-cavity splicing array 100. The second holes 402 on the silicon wafers 400 are connected to the cavities 104 of the multi-cavity splicing array 100 in a one-to-one correspondence. In this embodiment, the number of second holes 402 on each silicon wafer 400 is the same as the number of cavities 104, which is sixteen.

[0105] Two glass wafers 200 are bonded to the sides of two silicon wafers 400 away from the multi-cavity splicing array 100 to seal the cavity 104, thus obtaining the gas chamber glass shell array 500. Similarly, the surfaces of the silicon wafers 400 and glass wafers 200 used for bonding need to be polished or pre-polished.

[0106] This application also provides a preparation method for preparing the gas chamber glass shell 600, which specifically includes the following preparation steps:

[0107] The air chamber glass shell array 500 is cut to form an air chamber glass shell 600 with a single chamber 104. The air chamber glass shell array 500 is prepared using the preparation method described in any of the above embodiments. Then, the air chamber glass shell 600 with a single chamber 104 is ground and polished. In this embodiment, after cutting the air chamber glass shell array 500, sixteen air chamber glass shells 600 with a single chamber 104 can be formed.

[0108] It is also understandable that when the gas chamber glass shell array 500 is prepared using a method with a tail tube 300, after cutting the gas chamber glass shell array 500, the resulting gas chamber glass shell 600 is a traditional gas chamber glass shell with a tail tube, such as... Figure 11 As shown. When the gas chamber glass shell array 500 is fabricated using a method including silicon wafer 400 and glass wafer 200, after cutting the gas chamber glass shell array 500, the resulting gas chamber glass shell 600 is a micro / nano gas chamber glass shell, as shown. Figure 12 As shown.

[0109] Please continue reading Figure 11 and Figure 12 This application also provides a gas chamber glass shell 600, which is prepared by the preparation method for preparing the gas chamber glass shell 600 as described in any of the above embodiments.

[0110] Whether it is a traditional gas chamber glass shell or a micro / nano gas chamber (such as a MEMS gas chamber) glass shell, the multi-cavity splicing array 100 provided in this application can be used for mass production, which improves the production efficiency and consistency of the gas chamber glass shell, while reducing the difficulty of polishing the inner wall of the gas chamber, thereby reducing the production cost, which is conducive to the promotion, application and industrialization of gas chambers and quantum sensor devices.

[0111] The technical features of the above embodiments can be combined in any way. For the sake of brevity, not all possible combinations of the technical features in the above embodiments are described. However, as long as there is no contradiction in the combination of these technical features, they should be considered to be within the scope of this specification.

[0112] The embodiments described above are merely illustrative of several implementation methods of this application, and while the descriptions are relatively specific and detailed, they should not be construed as limiting the scope of the patent application. It should be noted that those skilled in the art can make various modifications and improvements without departing from the concept of this application, and these all fall within the scope of protection of this application. Therefore, the patent protection scope of this application should be determined by the appended claims.

Claims

1. A multi-cavity splicing array, characterized in that, include: The first splicing body (101) is provided in at least two parts and is arranged at intervals along the first direction X; A splicing layer (102) is provided between any two adjacent first splicing bodies (101). The splicing layer (102) includes at least two second splicing bodies (103) and is arranged at intervals along the second direction Y. The first direction X and the second direction Y are at an angle to each other. Each of the second splicing bodies (103) is fixedly connected to two adjacent first splicing bodies (101). Any two adjacent second splicing bodies (103) in any splicing layer (102) and the corresponding two adjacent first splicing bodies (101) form a cavity (104), and the number of cavities (104) is at least two.

2. The multi-cavity splicing array according to claim 1, characterized in that, The first splicing body (101) and the second splicing body (103) have equal lengths along the third direction Z, so that the two end faces of the multi-cavity splicing array are parallel along the third direction Z, and the first direction X, the second direction Y and the third direction Z are perpendicular to each other.

3. The multi-cavity splicing array according to claim 1, characterized in that, The number of the first splicing body (101) is three or more. The two outermost first splicing bodies (101) are defined as the first glass slide (101a), and the first splicing body (101) between the two first glass slides (101a) is defined as the second glass slide (101b). Along the first direction X, the length of the first glass slide (101a) is greater than the length of the second glass slide (101b).

4. The multi-cavity splicing array according to claim 1, characterized in that, Each of the splicing layers (102) includes three or more second splicing bodies (103). The two outermost second splicing bodies (103) are defined as first positioning elements (103a), and the second splicing body (103) between the two first positioning elements (103a) is defined as a second positioning element (103b). Along the second direction Y, the length of the first positioning element (103a) is greater than the length of the second positioning element (103b).

5. A preparation method for preparing a multi-cavity splicing array (100) as described in any one of claims 1 to 4, characterized in that, The preparation steps include the following: According to the specifications of the target multi-cavity splicing array (100), a suitable number of first splices (101) and second splices (103) are provided. The surfaces of the first splice body (101) and the second splice body (103) used to enclose the cavity (104) are precision polished; The first splicing body (101) and the second splicing body (103) are assembled and fixed to form a multi-cavity splicing array (100).

6. The preparation method according to claim 5, characterized in that, Before precision polishing the first splice body (101) and the second splice body (103), the first splice body (101) and the second splice body (103) are cut so that the dimensions of the first splice body (101) and the second splice body (103) meet the assembly requirements of the multi-cavity splicing array (100).

7. The preparation method according to claim 6, characterized in that, During the assembly and fixing of the first splice body (101) and the second splice body (103), the first splice body (101) and the second splice body (103) are cured by bonding process to form a multi-cavity splice array (100). The cured multi-cavity splice array (100) is then annealed and polished.

8. A gas-cell glass-shell array, characterized in that, include: Two glass wafers (200); Tailpipe (300), multiple of which are provided; and Multi-cavity splicing array (100) as described in any one of claims 1 to 4; Two glass wafers (200) are fixed at both ends of the multi-cavity splicing array (100) to seal the chambers (104) of the multi-cavity splicing array (100). One of the glass wafers (200) is a perforated glass plate (201). The perforated glass plate (201) has multiple first holes (202) in it. The first holes (202) correspond to the chambers (104). Multiple tail tubes (300) are fixed at the end of the perforated glass plate (201) away from the multi-cavity splicing array (100). Each tail tube (300) is connected to one of the first holes (202).

9. A gas-cell glass-shell array, characterized in that, include: Two silicon wafers (400), each of which has a plurality of second holes (402); Two glass wafers (200); and Multi-cavity splicing array (100) as described in any one of claims 1 to 4; Two silicon wafers (400) are respectively fixed at both ends of the multi-cavity splicing array (100). The second hole (402) in the silicon wafer (400) corresponds to the cavity (104). A glass wafer (200) is fixed at the end of the silicon wafer (400) away from the multi-cavity splicing array (100) to seal the cavity (104).

10. A preparation method, characterized in that, The fabrication of the gas-cell glass-shell array (500) as described in claim 8 comprises the following fabrication steps: Provides a multi-cavity splicing array (100) and two glass wafers (200); A perforated glass slide (201) is formed by drilling holes in one of the glass wafers (200). The first hole (202) on the perforated glass slide (201) corresponds to the cavity (104) in the multi-cavity splicing array (100). The other glass wafer (200) is a non-perforated glass slide (203). The tail tube (300) is bonded to the perforated glass slide (201) at the first hole (202) by a bonding process, and the first hole (202) is connected to the tail tube (300); Polish the connecting surface (204) of the perforated glass slide (201) that is away from the tail tube (300); The connecting surface (204) of the perforated glass slide (201) is bonded to the multi-cavity splicing array (100). The first hole (202) of the perforated glass slide (201) is connected to the cavity (104) in the multi-cavity splicing array (100) in a one-to-one correspondence. The non-perforated glass slide (203) is bonded to the side of the multi-cavity splicing array (100) away from the perforated glass slide (201) to seal the cavity (104) and obtain the air cell glass shell array (500).

11. A preparation method, characterized in that, The fabrication of the gas-cell glass-shell array (500) as described in claim 9 comprises the following fabrication steps: It provides a multi-cavity splicing array (100), two glass wafers (200) and two silicon wafers (400); Multiple second holes (402) are formed on both silicon wafers (400), and the second holes (402) correspond to the cavities (104) in the multi-cavity splicing array (100); Two silicon wafers (400) are bonded to both sides of the multi-cavity splicing array (100), and the second hole (402) on the silicon wafer (400) is connected to the cavity (104) of the multi-cavity splicing array (100) in a one-to-one correspondence. Two glass wafers (200) are bonded to the side of two silicon wafers (400) away from the multi-cavity splicing array (100) to seal the cavity (104) and obtain the gas chamber glass shell array (500).

12. A preparation method, characterized in that, The preparation steps for fabricating the gas chamber glass shell (600) include the following: The air chamber glass shell array (500) is cut to form an air chamber glass shell (600) having a single chamber (104), said air chamber glass shell array (500) being prepared by the preparation method as described in claim 10 or claim 11; The shape of the air chamber glass shell (600) with a single chamber (104) is ground and polished.

13. A glass shell for an air chamber, characterized in that, It is prepared using the preparation method described in claim 12.

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