Precursor supply system for a vapor deposition process and vapor deposition system

Abstract

The application relates to a precursor supply system for a vapor deposition process and a vapor deposition system, the precursor supply system comprising: a tank body in which a solid-state precursor is stored, the tank body comprising a side wall, a bottom wall and a top cover, the top cover being provided with an air inlet for connecting a carrier gas source and an air outlet for connecting a process cavity; a pipeline assembly for connecting the carrier gas source and the air inlet through a valve and connecting the air outlet and the process cavity through a valve; a heating device for heating the tank body to make the solid-state precursor reach a preset saturated vapor pressure, the heating device being covered outside the side wall and the bottom wall; and a heat-conducting medium dispersed in the solid-state precursor. The application can improve the heating uniformity of the solid-state precursor in the tank body and improve the use efficiency of the solid-state precursor in each area of the tank body.

Description

Technical Field

[0001] This invention relates to the field of semiconductor equipment, and more specifically to a precursor supply system and a vapor deposition system for a vapor deposition process. Background Technology

[0002] Atomic layer deposition (ALD) is a high-precision thin film deposition technology based on chemical vapor deposition. It has excellent step coverage, film thickness uniformity and conformity preservation, and is widely used in the field of thin film deposition for complex morphologies and high aspect ratio trenches.

[0003] In the ALD process, the concentration stability of precursors in the gas phase is a key factor affecting the quality of thin film growth. This is especially true for solid precursors, which require a carrier gas to carry the gaseous components generated from their sublimation or evaporation into the process chamber. However, with increasing ALD cycles, the continuous consumption of solid precursors leads to a gradual decrease in precursor concentration in the gas phase, resulting in uneven adsorption of precursors on the substrate surface. Secondly, to maintain gas phase concentration stability, existing methods often increase the saturated vapor pressure by raising the temperature of the precursor source. However, increasing the temperature leads to an excessively rapid precursor consumption rate, requiring frequent replacement of the precursor source and cleaning of pipelines, and severely impacting production efficiency. Thirdly, due to differences in solid precursor particle size and heat transfer efficiency, precursors in the container wall contact area sublimate preferentially due to sufficient heating, while internal particles are difficult to fully vaporize due to lag in heat conduction, resulting in low utilization of internal solid precursors. Furthermore, some organic solid precursors undergo self-decomposition reactions at high temperatures, producing byproducts and particles detrimental to production, severely affecting film purity and deposition process stability.

[0004] Therefore, the existing solid precursor supply system in ALD technology has prominent problems such as unstable gas phase concentration, low precursor utilization rate, and high process maintenance cost. There is an urgent need to develop a supply system that can achieve stable precursor supply, improve utilization rate, and avoid thermal decomposition in order to ensure the production of high-quality thin films. Summary of the Invention

[0005] The purpose of this invention is to provide a precursor supply system and a vapor deposition system for vapor deposition processes, addressing the problems of low utilization rate and poor vapor phase stability of existing solid precursors. Furthermore, it aims to provide a vapor deposition system capable of forming high-quality thin films.

[0006] To address the above problems, the present invention provides a precursor supply system for a vapor deposition process, comprising:

[0007] A tank containing a solid precursor, the tank comprising a side wall, a bottom wall and a top cover, the tank having an inlet for connecting to a carrier gas source and an outlet for connecting to a process chamber.

[0008] A piping assembly comprising multiple pipes, at least one of the pipes being able to connect the carrier gas source to the air inlet via a valve, and at least one of the pipes being able to connect the air outlet to the process chamber via a valve.

[0009] A heating device is used to heat the tank to bring the solid precursor to a preset saturated vapor pressure;

[0010] A thermally conductive medium is dispersed in the solid precursor.

[0011] Optionally, the heating device covers the exterior of the sidewall and the bottom wall, and the heating device includes a heating wire, wherein:

[0012] The density of the heating wires covering the sidewalls gradually increases from the bottom wall to the top cover.

[0013] The heating wires covering the bottom wall have a uniform density.

[0014] Optionally, the heat-conducting medium includes a heat-conducting rod that extends from the sidewall toward the center of the tank.

[0015] Optionally, the heat-conducting medium includes a heat-conducting liquid.

[0016] Optionally, the heat-conducting fluid includes an ionic liquid composed of a mixture of ammonium salts, imidazolonium salts, or morpholinium salts.

[0017] Optionally, it also includes: a magnetic rotor and a control motor;

[0018] The magnetic rotor is immersed in the heat-conducting liquid and located on the bottom wall surface;

[0019] The control motor is located on the outside of the bottom wall and rotates the magnetic rotor by magnetic force.

[0020] Optionally, the solid precursor includes one or more of PDMAT, TDMAHf, and TDMAZr.

[0021] Optionally, a filter is also included, disposed on a piping assembly between the process chamber and the outlet, for filtering solid particles.

[0022] Optionally, it also includes: a temperature-controlled chamber for housing at least a portion of the piping assembly connected to the air outlet and the air inlet.

[0023] Optionally, a heating wire is wound around the pipe assembly connecting the process chamber and the air outlet.

[0024] Optionally, it also includes a heat insulation device that covers the exterior of the heating assembly.

[0025] Optionally, the air inlet includes an air inlet pipe extending into the interior of the tank, the bottom of the air inlet pipe being closed, and a plurality of air outlet holes being provided on its side.

[0026] Optionally, the air inlet includes an air inlet pipe extending into the interior of the tank, the end of which is connected to an air baffle plate, and a vent hole is provided on its side.

[0027] Optionally, the air outlet includes an air outlet pipe extending into the interior of the tank, and the end of the air outlet pipe includes an air collection section with a diameter larger than that of the air outlet pipe.

[0028] In addition, the present invention also provides a vapor deposition system, comprising:

[0029] The precursor supply system is used to provide gaseous precursors;

[0030] Process cavity;

[0031] A base, which is disposed within the process cavity, is used to support the substrate;

[0032] An air intake device is located at the top of the process chamber and is connected to the air outlet of the precursor supply system.

[0033] A second valve is provided between the air inlet and the carrier gas source, and a third valve is provided between the air outlet and the air inlet device; the upstream of the second valve and the downstream of the third valve are connected by a fifth valve.

[0034] The third valve is also connected to the air intake device via the sixth valve, and to the exhaust pump via the seventh valve.

[0035] Carrier gas can be introduced into the tank by opening the second, third, and sixth valves and closing the fifth and seventh valves, carrying out the gaseous precursor into the reaction chamber; and carrier gas can be introduced into the tail gas pump by opening the fifth and seventh valves and closing the second, third, and sixth valves to pre-clean the pipeline.

[0036] This invention incorporates a heat-conducting medium into the tank, enhancing the heating uniformity of the solid precursor and improving its utilization efficiency in various areas of the tank. This not only reduces heating costs but also minimizes thermal decomposition of the solid precursor due to heat accumulation. Furthermore, the thermal gradient created in the vertical direction of the tank by the densely and sparsely arranged heating wires ensures that the gas phase space is at a temperature above the saturated vapor pressure, thus avoiding the problem of precursor gas phase instability. By improving the outlet direction of the inlet, the problem of particles being carried into the gas phase space is solved. This invention also allows for the selective introduction of carrier gas into the tank or exhaust gas pump through valve control on the pipeline to execute process procedures or pre-cleaning procedures. This invention significantly reduces the amount of solid precursor used, directly reducing dependence on limited natural resources and reducing environmental pollution. Moreover, reduced gas usage also means lower production costs, enhancing the economic competitiveness of enterprises and having a positive impact on environmental protection. The implementation of this invention promotes green production and sustainable development. By optimizing production processes and reducing energy consumption and pollution emissions, it better responds to the global call for environmental protection and sustainable development. Attached Figure Description

[0037] Figure 1 This is a schematic diagram of the precursor supply system according to an embodiment of the present invention;

[0038] Figure 2 This is a schematic diagram of the precursor supply system according to another embodiment of the present invention;

[0039] Figure 3 This is a schematic diagram of a vapor deposition system according to an embodiment of the present invention. Detailed Implementation

[0040] The precursor supply system and vapor deposition system for vapor deposition processes proposed in this invention will be further described in detail below with reference to the accompanying drawings and specific embodiments. The advantages and features of this invention will become clearer from the following description. It should be noted that the drawings are in a very simplified form and use non-precise proportions, used only to facilitate and clarify the illustration of the embodiments of this invention. Please refer to the drawings to make the objectives, features, and advantages of this invention more apparent and understandable. It should be understood that the structures, proportions, sizes, etc., depicted in the accompanying drawings are only for illustrative purposes to aid those skilled in the art and are not intended to limit the implementation conditions of this invention. Therefore, they have no substantial technical significance. Any modifications to the structure, changes in proportions, or adjustments to the size, without affecting the effects and objectives achieved by this invention, should still fall within the scope of the technical content disclosed in this invention.

[0041] Atomic layer deposition (ALD) technology achieves the layer-by-layer growth of single atomic layers through a chemical adsorption reaction on the substrate surface. During deposition, a gaseous precursor is continuously introduced into the process chamber through piping. To ensure the uniformity of the deposited film, the gaseous precursor must be maintained at a stable concentration. For solid precursors, the concentration of the gaseous precursor is controlled by adjusting the temperature of the tank storing the solid precursor, thereby maintaining a stable saturated vapor pressure. However, solid precursors near the tank wall are easily sublimated by heating, while solid precursors in other areas inside the tank undergo delayed sublimation due to heating lag. This results in low utilization efficiency of the internal solid precursors, leading to the concentration of precursors in the gas phase failing to reach the preset value. The heating lag is mainly caused by the poor thermal conductivity of the solid precursors and the inconsistent heat conduction paths between solid precursors.

[0042] To address the issue of uneven heating within the tank, this invention proposes a precursor supply system for vapor deposition processes. Please refer to [link / reference]. Figure 1 and Figure 2 The precursor supply system includes a tank 100, a piping assembly, a heating device, and a heat transfer medium. The tank includes a side wall 101, a bottom wall 102, and a top cover 103. The top cover 103 has an inlet 104 for connecting to a carrier gas source and an outlet 105 for connecting to a process chamber. The tank is filled with a solid precursor 106, the filling height of which is lower than the height of the inlet 104 and the outlet 105. The carrier gas enters the tank through the inlet 104 and mixes with the gaseous precursor in the upper space of the tank. The mixed gas carries the gaseous precursor required for the process into the process chamber through the outlet 105. The piping assembly may include multiple pipelines, one of which can be switched on and off via a valve to connect the carrier gas source to the inlet 104, and another pipeline can be switched on and off via a valve to connect the outlet 105 to the process chamber. The heating device is used to heat the tank to bring the solid precursor to a preset saturated vapor pressure, and to provide the required concentration of gaseous precursor through temperature control. The heating device transfers heat to the interior of the tank 100 via thermal radiation or conduction. In one embodiment, the heating device may cover the exterior of the side wall 101 and the bottom wall 102. The heat-conducting medium is dispersed within the solid precursor 106 to enhance the thermal conductivity between the solid precursors 106. Through the heat transfer effect of the heat-conducting medium, the temperature throughout the tank can quickly become uniform.

[0043] In this example, the solid precursor 106 used in the atomic layer deposition process includes at least one of PDMAT (penta(dimethylamino)tantalum), TDMAHf (tetra(dimethylaminohafnium)), and TDMAZr ((tetra(dimethylamino)zirconium). Due to their irregular particle morphology, the particle sizes of similar solid precursors are also inconsistent. This results in different contact areas between particles, leading to differences in heat conduction paths. When the tank 100 containing these particles is heated, different temperature gradients are formed inside the tank. In this situation, even increasing the heating efficiency of the heating device cannot solve the problem of low utilization of local solid precursors caused by temperature differences. Further increasing the temperature may further widen the temperature gradient, ultimately leading to thermal decomposition in areas with high thermal conductivity. To alleviate this problem, the thermally conductive medium used in this invention can be a high-thermal-conductivity thermal rod 107. This type of thermal rod should have stable chemical properties and not react with the precursor, such as a metal rod. Figure 1 As shown, the heat-conducting rods 107 extend from the sidewall 101 toward the center of the tank and are distributed in multiple layers along the longitudinal direction of the tank. Furthermore, these heat-conducting rods 107 are allowed to have an inclined angle or be distributed in a crisscross pattern. Based on the concept of the present invention, these heat-conducting rods 107 can be fixedly positioned within the tank, for example, heat-conducting rods with a tree-like trunk and branches, fixed to the bottom wall 102 or sidewall 101 of the tank; or they can be alternately loaded into the tank 100 along with the solid precursor 106 during loading, flexibly dispersed within the tank 100 according to the natural distribution of the solid precursor 106.

[0044] In other examples, the thermally conductive medium includes a thermally conductive liquid 108; please refer to [link to relevant documentation]. Figure 2 The heat-conducting fluid comprises one or more mixed ionic liquids selected from ammonium salts, imidazodium salts, or morpholinium salts. These ionic liquids possess the following properties: low saturated vapor pressure, low freezing point, and high decomposition temperature, and do not react with the solid precursor. The particulate solid precursor 106 can be uniformly dispersed in this type of heat-conducting fluid 108, thereby reducing the temperature gradient in each region.

[0045] In the preferred examples, please continue reading. Figure 2 For a solid precursor system containing a heat-conducting liquid, the precursor supply system further includes a magnetic rotor 131 and a control motor 132. The magnetic rotor 131 is immersed in the heat-conducting liquid 108 and located on the surface of the bottom wall 102. The control motor 132 is located below and outside the bottom wall 102 and controls the rotation of the magnetic rotor 131 by magnetic force. The stirring effect of the magnetic rotor 131 further improves the heating uniformity of the solid precursor 106.

[0046] The above examples demonstrate that adding a heat-conducting medium to the tank 100 significantly improves the heating uniformity of the solid precursor. However, in actual production, problems such as insufficient phase stability of the gaseous precursor still exist. For example, after the temperature decreases, the gaseous precursor is prone to liquefaction or solid precipitation. This not only reduces the concentration of the gaseous precursor in the gas phase but may even cause liquid and / or solid precursors to enter the pipeline, thereby causing process stability problems. To solve such problems, the heating device provided by the present invention has a heating power in the gas phase space greater than that in the solid phase space to maintain the phase stability of the gas phase. The heating device includes heating wires, wherein the heating wires 121 covering the sidewall 101 have a gradually increasing coverage density from the bottom wall 102 to the top cover 103. Through this densely and sparsely arranged heating wires 121, a higher temperature can be formed in the gas phase space 111 above the tank, that is, a negative temperature gradient is formed from top to bottom in the vertical direction of the tank. The advantage of this configuration is that a sufficiently high temperature can be maintained in the gas phase space 111 to increase the saturated vapor pressure of the precursor, thereby preventing the precursor from changing from the gas phase to the liquid phase or precipitating into a solid phase. Furthermore, a relatively low temperature is maintained in the solid phase space below, effectively preventing the solid phase from accumulating heat due to prolonged exposure to high temperatures, which could trigger a decomposition reaction. Additionally, the heating wire 121 extends from the edge of the bottom wall 102 towards the center with a uniform coverage density, ensuring that the solid precursor 106 at both the edge and center is heated evenly.

[0047] As described above, the temperature in the gas phase space 111 above the tank needs to be maintained higher than that in the solid phase space to prevent the precipitation of the precursor into liquid and / or solid phases. We also note that the gaseous precursor will cool down after leaving the tank due to heat exchange with the piping assembly, forming a liquid or solid phase. Furthermore, the flowing carrier gas carries away some heat, causing the temperature of the gas phase space 111 to decrease. Therefore, in other examples, the precursor supply system also includes a thermostatic chamber 500 for enclosing at least a portion of the piping assembly connecting the inlet 104 and the outlet 105. For example, the thermostatic chamber 500 insulates the piping assembly connected to the carrier gas source to ensure that the carrier gas entering the tank is heated to a temperature comparable to that of the gas phase space 11, preventing excessively cold carrier gas from entering the gas phase space 111 and causing a temperature drop. In addition, the constant temperature chamber 500 also insulates the pipe assembly connecting the outlet 105 and the process chamber, especially a section of the pipe assembly near the outlet 105, thereby preventing the gas flowing out of the outlet 105 from being cooled inside the pipe wall and precipitating liquid and / or solid phases.

[0048] Furthermore, in other examples, to prevent undesirable liquid and / or solid phase precipitation into the process chamber, a filter 600 is installed in the pipeline between the process chamber and the outlet 105 to filter liquid and / or solid particles. Additionally, heating wires can be arranged on the piping assembly to further prevent liquid and / or solid phase precipitation. The heating wires can be positioned on the piping assembly connected to one side of the process chamber, including heating various components within the piping assembly, such as valves and filters.

[0049] For solid precursors requiring heating, considering the need to reduce heating costs, the precursor process system in this example also includes an insulation device 109, which covers the exterior of the heating assembly to reduce heat exchange between the heating assembly and the external environment. The insulation device 109 reduces heat loss, minimizes the impact of the external environment on the tank temperature, improves the stability of the tank temperature, and lowers heating costs.

[0050] Furthermore, this invention also considers that small-particle solid precursors are easily carried into the pipeline by airflow, thereby increasing the risk of pipeline blockage. To address this, this invention also improves the air inlet 104. Conventional air inlets direct airflow towards the bottom wall of the tank, which causes the particulate solid precursors 106 to be carried by the airflow into the upper gas phase space 111, thus creating a risk of pipeline blockage. This invention improves the air inlet 104 of the tank equipped with a heat-conducting rod 107 to prevent the carrier gas from directly blowing onto the solid precursors. Please refer to [link to relevant documentation]. Figure 1 The air inlet 104 includes an air inlet pipe extending into the tank 100. The bottom of the air inlet pipe is closed, while multiple air outlets A are provided on the side. Airflow is discharged from the side air outlets A, preventing airflow from directly blowing onto the solid precursor 106 and greatly reducing the risk of particles entering the upper pipe. Additionally, in some examples, a baffle plate can be connected to the end of the air inlet 104, with a vent hole B on the side. Similar to the air outlets A, airflow is discharged from the side vent hole B to reduce the risk of particles entering the upper pipe. It should be noted that this invention does not limit the air inlet of tanks filled with heat-conducting liquid 108. The air inlet 104 of such tanks can be compatible with the aforementioned structure of air outlets A and / or vent holes B, and can also adopt a conventional direct-blowing air outlet method to the bottom wall of the tank, such as... Figure 2 The flat opening (C) or the angled opening (D) shown are examples. In some embodiments, the air outlet 105 includes an air outlet pipe extending into the interior of the tank, the end of which is provided with a gas collecting section with an inner diameter larger than the inner diameter of the air outlet pipe, such as an annular cover or a conical cover, to improve the efficiency of collecting and outputting gaseous precursors.

[0051] The precursor supply system provided by this invention can not only heat solid precursors uniformly and improve the utilization rate of solid precursors in various regions of the tank, but also reduce the heating temperature; through temperature gradient control, the risk of precipitation of liquid and / or solid precursors can be reduced.

[0052] In addition, the present invention also provides a vapor deposition system, such as Figure 3 As shown, the system includes: a process chamber 300, the precursor supply system, a base 301, and an inlet device 302. The base 301 is disposed within the process chamber 300 and is used to support the substrate. The precursor supply system supplies gaseous precursors to the process chamber 300, which can be adsorbed onto the surface of the substrate. The inlet device 302 is located at the top of the process chamber 300 and is connected to the outlet 105 of the precursor supply system, used to disperse the gaseous precursors onto the substrate surface. The precursor supply system can be used to provide precursors such as PDMAT, TDMAHf, and TDMAZr, which are solid at room temperature. During the process, these precursors adhere to the wafer surface and then react with the reactive gas to form a thin film. The reactive gas can be connected to the inlet device 302 through another pipeline. The gaseous precursor is supplied via the pipeline assembly, which is equipped with valves to control the opening and closing of the pipeline, pressure gauges to monitor the pressure inside the pipeline, filters, flow meters, and other components. The specific arrangement of these components will be described in the following example.

[0053] Please see Figure 3This diagram illustrates a vapor deposition system according to an embodiment of the present invention. For the vapor deposition system, the piping assembly includes multiple valves. A carrier gas valve 211 is installed on the pipeline leading from the carrier gas source to the tank 100 to control the flow of carrier gas at the source. A flow controller 411 and a pressure gauge 511 are sequentially installed on the pipeline assembly downstream of the carrier gas valve 211 to control the flow rate of the carrier gas and detect its pressure. A first valve 201 and a second valve 202 are sequentially installed downstream of the pressure gauge 511 and between it and the inlet 104. A third valve 203 and a fourth valve 204 are sequentially installed between the outlet 105 and the inlet device 302. The connection point between the first valve 201 and the second valve 202, and the connection point between the third valve 203 and the fourth valve 204, are connected via a fifth valve 205. Downstream of the fourth valve 204, a filter 600 is also provided. The filter 600 is located on the main pipeline 710. Downstream of the main pipeline 710, it splits into two branches 711 and 712. Branch 711 is equipped with a sixth valve 206, used to control the on / off state of the gaseous precursor in the intake device 302. Branch 712 is equipped with a seventh valve 207, used to control the on / off state of communication with the exhaust gas pump 900. The exhaust gas pump 900 is also connected to the process chamber 300 to discharge the exhaust gas from the process chamber 300. An exhaust gas valve 212 is also provided on the exhaust gas pipeline 731 connected to the input end of the exhaust gas pump 900. This exhaust gas valve 212 is used to control the on / off state of the exhaust gas pump 900 with other pipelines.

[0054] During the process, carrier gas valve 211 can be opened to provide carrier gas, and tail gas valve 212 can be opened to discharge tail gas. The gas flow direction can be switched by adjusting the opening and closing of the first valve 201 to the seventh valve 207. For example, by opening the first valve 201, the second valve 202, the third valve 203, the fourth valve 204 and the sixth valve 206, and closing the fifth valve 205 and the seventh valve 207, the carrier gas enters the tank sequentially through the inlet 104, the first valve 201 and the second valve 202, and the gaseous precursor is supplied to the process chamber 300 sequentially through the outlet 105, the third valve 203, the fourth valve 204 and the sixth valve 206 via the branch 711. For example, by opening the first valve 201, the fourth valve 204, the fifth valve 205 and the seventh valve 207, and closing the second valve 202, the third valve 203 and the sixth valve 206, the carrier gas is directly introduced into the exhaust gas pump 900 through the branch 712 to pre-clean the pipeline.

[0055] For the other reactant gas, a separate pipeline is connected to process chamber 300, and several valves, flow controllers, and pressure gauges are installed on this pipeline. Please refer to [further details needed]. Figure 3The reaction gas source is connected to the main reaction gas pipeline 720 sequentially via reaction gas valve 213, flow controller 412, and pressure gauge 512. Downstream of the main reaction gas pipeline 720, it splits into two reaction gas branches 721 and 722. Reaction gas branch 721 is equipped with an eighth valve 208 to control the flow of reaction gas into the reaction chamber 300; reaction gas branch 722 is equipped with a ninth valve 209 to control the flow of reaction gas to the tail gas pump 900. Similarly, the flow direction of the reaction gas is controlled by switching the opening and closing of the eighth valve 208 and the ninth valve 209. For example, opening the eighth valve 208 and closing the ninth valve 209 supplies reaction gas to the process chamber 300; opening the ninth valve 209 and closing the eighth valve 208 introduces reaction gas into the tail gas pump 900, maintaining the flow of reaction gas and ensuring a stable gas pressure.

[0056] Furthermore, pressure gauges are installed on the cleaning pipelines to detect the pressure in the pipelines during cleaning. In this example, a pressure gauge 513 is installed on branch 712, and a pressure gauge 514 is installed on the reaction gas branch 722.

[0057] Furthermore, the pipelines used to transport the precursor need to be insulated to ensure the phase stability of the gaseous precursor. In this example, heating wires are wound around the main pipeline 710 and the branch pipelines 711 and 712.

[0058] This invention improves the utilization efficiency of solid precursors in various regions of the tank by enhancing the heating uniformity of solid precursors. Therefore, the required concentration of gaseous precursors can be achieved in the gas phase space at a lower temperature, avoiding the need to raise the temperature to reach the desired concentration. This not only reduces heating costs but also minimizes thermal decomposition of solid precursors due to heat accumulation. Furthermore, by creating a thermal gradient in the vertical direction of the tank, the gas phase space is kept at a temperature above the saturated vapor pressure, thus avoiding the problem of precursor gas-phase instability.

[0059] Although the present invention has been described in detail through the preferred embodiments above, it should be understood that the above description should not be considered as a limitation of the present invention. Various modifications and substitutions to the present invention will be apparent to those skilled in the art after reading the above description. Therefore, the scope of protection of the present invention should be defined by the appended claims.

Claims

1. A precursor supply system for a vapor deposition process, characterized in that, include: A tank containing a solid precursor, the tank comprising a side wall, a bottom wall and a top cover, the tank having an inlet for connecting to a carrier gas source and an outlet for connecting to a process chamber. A piping assembly comprising multiple pipes, at least one of the pipes being able to connect the carrier gas source to the air inlet via a valve, and at least one of the pipes being able to connect the air outlet to the process chamber via a valve. A heating device is used to heat the tank to bring the solid precursor to a preset saturated vapor pressure; A thermally conductive medium is dispersed in the solid precursor.

2. The precursor supply system for a vapor deposition process as described in claim 1, characterized in that, The heating device covers the exterior of the sidewall and the bottom wall, and the heating device includes a heating wire, wherein: The density of the heating wires covering the sidewalls gradually increases from the bottom wall to the top cover. The heating wires covering the bottom wall have a uniform density.

3. The precursor supply system for a vapor deposition process as described in claim 1, characterized in that, The heat-conducting medium includes a heat-conducting rod that extends from the sidewall toward the center of the tank.

4. The precursor supply system for a vapor deposition process as described in claim 1, characterized in that, The heat-conducting medium includes a heat-conducting liquid.

5. The precursor supply system for a vapor deposition process as described in claim 4, characterized in that, The heat-conducting fluid includes ionic liquids composed of a mixture of ammonium salts, imidazolonium salts, or morpholinium salts.

6. The precursor supply system for a vapor deposition process as described in claim 4, characterized in that, It also includes: magnetic rotor and control motor; The magnetic rotor is immersed in the heat-conducting liquid and located on the bottom wall surface; The control motor is located on the outside of the bottom wall and rotates the magnetic rotor by magnetic force.

7. The precursor supply system for a vapor deposition process as described in claim 1, characterized in that, The solid precursors include one or more of PDMAT, TDMAHf, and TDMAZr.

8. The precursor supply system for a vapor deposition process as described in claim 1, characterized in that, It also includes a filter disposed on a piping assembly between the process chamber and the outlet for filtering solid particles.

9. The precursor supply system for a vapor deposition process as described in claim 1, characterized in that, Also includes: A thermostatic chamber for housing at least a portion of the piping assembly connected to the air outlet and the air inlet.

10. The precursor supply system for a vapor deposition process as described in claim 1, characterized in that, A heating wire is wound around the pipe assembly connecting the process chamber and the air outlet.

11. The precursor supply system for a vapor deposition process as described in any one of claims 1 to 10, characterized in that, It also includes a heat insulation device, which is installed on the outside of the heating component.

12. The precursor supply system for a vapor deposition process as described in any one of claims 1 to 10, characterized in that, The air inlet includes an air inlet pipe extending into the interior of the tank. The bottom of the air inlet pipe is closed, and multiple air outlets are provided on its side.

13. The precursor supply system for a vapor deposition process as described in any one of claims 1 to 10, characterized in that, The air inlet includes an air inlet pipe extending into the interior of the tank, with a baffle plate connected to the end of the air inlet pipe and a vent hole on its side.

14. The precursor supply system for a vapor deposition process as described in claim 1, characterized in that, The vent includes a vent pipe extending into the interior of the tank, and the end of the vent pipe includes a gas collecting section with a diameter larger than that of the vent pipe.

15. A vapor deposition system, characterized in that, include: The precursor supply system as described in any one of claims 1 to 14 is used to provide a gaseous precursor; Process cavity; A base, which is disposed within the process cavity, is used to support the substrate; An air intake device is located at the top of the process chamber and is connected to the air outlet of the precursor supply system. A second valve is provided between the air inlet and the carrier gas source, and a third valve is provided between the air outlet and the air inlet device; the upstream of the second valve and the downstream of the third valve are connected by a fifth valve. The third valve is also connected to the air intake device via the sixth valve, and to the exhaust pump via the seventh valve.

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