Semiconductor reactor and chemical vapor deposition apparatus

Abstract

The application belongs to the technical field of semiconductor processing, and discloses a semiconductor reactor and a chemical vapor deposition device, which comprise a magnetic fluid assembly, an electrode heating assembly and a base assembly; the magnetic fluid assembly comprises a rotating motor and an inner shaft sleeve, an outer shaft sleeve and a base sleeve which are sequentially arranged from the inside to the outside of the shaft center; a first magnetic fluid structure is arranged between the inner shaft sleeve and the outer shaft sleeve, a second magnetic fluid structure is arranged between the outer shaft sleeve and the base sleeve, the inner shaft sleeve is provided with a communication cavity which is communicated with a reaction cavity, the rotating motor drives the outer shaft sleeve to rotate, and the base sleeve is sealingly connected to a cavity assembly; the electrode heating assembly is arranged in the communication cavity, and an electrode structure is arranged in the reaction cavity; the base assembly comprises a rotating cover and a thimble mechanism which is arranged in the communication cavity; the rotating cover is arranged in the reaction cavity and connected to the outer shaft sleeve at one end, the rotating cover drives a wafer to rotate, and the thimble mechanism is arranged in the reaction cavity and can be axially lifted; the semiconductor reactor is sealed by the double-layer magnetic fluid, and the overall installation difficulty of the semiconductor reactor is reduced.

Description

Technical Field

[0001] This invention relates to the field of semiconductor processing technology, and more particularly to semiconductor reactors and chemical vapor deposition equipment. Background Technology

[0002] Chemical vapor deposition (CVD) equipment deposits a single-crystal thin film onto a wafer in a high-temperature reaction chamber. The reaction chamber requires extremely high reaction temperatures and a clean environment, which conventional sealing structures, such as vacuum-sealed interfaces, cannot effectively meet. Magnetorheological fluid (MFD) sealing devices utilize a permanent magnet to generate a magnetic field within the sealing gap. This magnetic field firmly fixes the MFD within the gap to resist the pressure difference on both sides, thus achieving a seal. MFDs offer advantages such as high sealing performance, low friction loss, and the ability to withstand varying temperature and pressure conditions, making them suitable for semiconductor processing equipment. However, existing MFDs are typically elongated structures with limited internal sealing space. This not only increases the difficulty of installation within the reaction chamber but also results in poor versatility, making it difficult to accommodate the complex structural components of the reaction chamber. Summary of the Invention

[0003] The first objective of this invention is to provide a semiconductor reactor that solves the problem that existing chemical vapor deposition equipment using magnetohydrodynamic sealing devices has a small internal sealing area, which increases installation difficulty, has poor versatility, and is difficult to accommodate the complex structural components of the reaction chamber.

[0004] A second objective of the present invention is to provide a chemical vapor deposition apparatus having the aforementioned semiconductor reactor, which can increase the sealed area of ​​the chemical vapor deposition apparatus and reduce the overall installation difficulty.

[0005] To achieve this objective, the present invention adopts the following technical solution:

[0006] First, a semiconductor reactor is provided, including a cavity assembly having a reaction chamber for accommodating a wafer, the semiconductor reactor further comprising:

[0007] A magnetofluidic assembly includes a rotary motor and an inner bushing, an outer bushing, and a base bushing arranged sequentially from the center of the shaft to the outside. A first magnetofluidic structure is provided between the inner bushing and the outer bushing, and a second magnetofluidic structure is provided between the outer bushing and the base bushing. The inner bushing has a through-hole cavity that is connected to a reaction chamber. The rotary motor drives the outer bushing to rotate, and one end of the base bushing is sealed to the cavity assembly.

[0008] An electrode heating assembly, comprising an electrode structure for heating a reaction chamber, wherein the electrode heating assembly is disposed within the communicating cavity;

[0009] The base assembly includes a rotating housing and a pin mechanism passing through the communicating cavity. The rotating housing is disposed in the reaction cavity and has an open end connected to the outer bushing. The rotating housing can drive the wafer to rotate. The pin mechanism is axially and vertically disposed in the reaction cavity and is used to lift the wafer.

[0010] In one embodiment, the semiconductor reactor further includes a worktable, and the magnetofluid assembly further includes a bottom positioning plate, a mounting retaining ring, and a support end cap. The bottom positioning plate is detachably connected to the worktable, which supports the magnetofluid assembly. The rotary motor and the inner bushing are disposed on the bottom positioning plate. The mounting retaining ring is connected to the stator of the rotary motor and the end of the base bushing away from the cavity assembly. The support end cap is connected to the rotor of the rotary motor and the end of the outer bushing away from the rotating housing.

[0011] In one embodiment, both the first and second magnetofluid structures are located above the rotary motor. The magnetofluid assembly further includes a first bearing structure disposed between the inner bushing and the outer bushing, and a second bearing structure disposed between the outer bushing and the base bushing. One side of the support end cap extends radially from the outer bushing toward the inner bushing to support the first bearing structure, and one side of the mounting retaining ring extends radially from the base bushing toward the outer bushing to support the second bearing structure.

[0012] In one embodiment, the second bearing structure includes two second bearing bodies spaced apart along the axial direction, and the second magnetohydrodynamic structure is disposed between the two second bearing bodies; and / or,

[0013] The first bearing structure includes two first bearing bodies spaced apart along the axial direction, and the first magnetohydrodynamic structure is disposed above the two first bearing bodies.

[0014] In one embodiment, the second bearing structure includes two second bearing bodies spaced apart axially, the second magnetofluid structure includes a second magnetic pole ring, the second magnetic pole ring having a sealed magnetofluid channel filled with a magnetic fluid, the second magnetic pole ring being fitted onto the outer bushing, and both ends of the second magnetic pole ring abutting against the two second bearing bodies; and / or,

[0015] The first bearing structure includes two first bearing bodies spaced apart along the axial direction. The magnetohydrodynamic assembly also includes at least one support sleeve, which is fitted onto the inner bushing, with both ends of the support sleeve abutting against the two first bearing bodies respectively.

[0016] In one embodiment, the magnetofluid assembly further includes a sleeve connecting flange, an adapter flange, and a gasket. The adapter flange is disposed on the upper end face of the outer bushing. The sleeve connecting flange is connected between the adapter flange and the rotating cover. The gasket is disposed at the flange end of the sleeve connecting flange. Fasteners are sequentially passed through the gasket, the flange end, and the adapter flange to connect to the outer bushing.

[0017] In one embodiment, the inner bushing has a first water-cooling cavity inside, the first water-cooling cavity having a first water inlet and a first water outlet communicating with an external water-cooling system to form a circulating cooling channel; and / or,

[0018] The base bushing has a second water-cooling cavity, which has a second water inlet and a second water outlet connected to an external water-cooling system to form a circulating cooling channel.

[0019] In one embodiment, the first water-cooling cavity extends from bottom to top along the axial direction of the inner bushing, and a water-cooling groove is formed on the outer side of the inner bushing. A plurality of water-proof layers are arranged at intervals along the axial direction of the inner bushing in the water-cooling groove. The water-proof layers extend along the circumference of the inner bushing, and a water-cooling flow channel is formed between adjacent water-proof layers. Two adjacent water-cooling flow channels are interconnected.

[0020] The water-cooled tank is connected to the first water-cooled cavity. The first magnetic fluid structure includes a first magnetic pole ring. A sealed magnetic fluid channel is opened inside the first magnetic pole ring. The magnetic fluid channel is filled with magnetic fluid. The first magnetic pole ring is fitted onto the inner bushing and closes the opening of the water-cooled tank. The water-cooled flow channel cools the first magnetic pole ring.

[0021] In one embodiment, the electrode heating assembly further includes a graphite electrode shaft that passes through the communicating cavity and extends axially along the communicating cavity. One end of the graphite electrode shaft is electrically connected to an external power source, and the other end is connected to the electrode structure, which is disposed within the rotating housing.

[0022] In one embodiment, the electrode structure includes a heating electrode disk and a first heat insulation structure. The heating electrode disk extends radially along the rotating housing and is electrically connected to the graphite electrode shaft. The first heat insulation structure includes at least one layer of graphite plate and / or a first graphite felt, and is disposed below the heating electrode disk; and / or,

[0023] The graphite electrode shaft extends from the communicating cavity into the reaction chamber. The electrode heating assembly further includes a second heat insulation structure, which comprises a quartz sleeve and a second graphite felt disposed within the quartz sleeve. The graphite electrode shaft and the ejector pin mechanism pass through the second graphite felt; and / or,

[0024] The electrode heating assembly further includes a first sealing flange, a second sealing flange, and a water-cooled electrode structure. The semiconductor reactor further includes a worktable. The bottom of the magnetofluid assembly is detachably connected to the worktable. The first sealing flange is sealed to the worktable, and the second sealing flange is sealed to the top of the inner bushing. One end of the water-cooled electrode structure is located below the first sealing flange and passes through the first sealing flange to connect to the graphite electrode shaft. The end of the water-cooled electrode structure away from the graphite electrode shaft is electrically connected to an external power source. The graphite electrode shaft passes through the second sealing flange, and the ejector pin mechanism passes through the first sealing flange and the second sealing flange in sequence.

[0025] In one embodiment, the base assembly further includes a lifting drive, the ejector mechanism includes a lifting shaft and an ejector pin disposed at the end of the lifting shaft, and a movably connected tray is disposed at one end of the rotating housing away from the magnetofluid assembly. The tray is used to support the wafer. The end of the lifting shaft away from the ejector pin is connected to the lifting drive, and the lifting drive drives the lifting shaft to move up and down along the axial direction of the communicating cavity. The lifting shaft can drive the ejector pin to rise to lift the tray away from the rotating housing, or drive the ejector pin to fall so that the tray is connected to the rotating housing.

[0026] In one embodiment, the base assembly further includes a guide mechanism comprising a guide sleeve, a guide shaft, and a lifting plate. The guide shaft is axially reciprocatingly connected to the guide sleeve. The guide shaft and the lifting shaft are parallel to each other. The end of the guide shaft away from the guide sleeve and the end of the lifting shaft away from the ejector pin are both connected to the lifting plate. The lifting plate is connected to the output end of the lifting drive component; and / or,

[0027] The semiconductor reactor further includes a worktable, the bottom of the magnetofluid assembly is detachably connected to the worktable, the base assembly further includes a lifting flange and a lifting bellows, one end of the lifting flange is sealed to the worktable, the lifting bellows is fitted over the lifting shaft and one end is connected to the lifting flange, the other end is connected to the output end of the lifting drive, and the lifting shaft passes through the lifting flange to connect to the output end of the lifting drive; and / or,

[0028] The lifting shaft includes a quartz lifting shaft and a support lifting shaft that are interconnected and coaxially arranged. The quartz lifting shaft passes through the inner bushing, and one end of the quartz lifting shaft extends into the reaction chamber to connect to the ejector pin, while the other end is connected to the support lifting shaft. The other end of the support lifting shaft, away from the quartz lifting shaft, is connected to the lifting drive component.

[0029] Secondly, chemical vapor deposition equipment is provided, including a semiconductor reactor as described in any of the above embodiments.

[0030] The beneficial effects of this invention are:

[0031] The semiconductor reactor and chemical vapor deposition equipment provided by this invention integrate magnetic fluid rotary sealing, heating of the reaction chamber temperature, and wafer lifting / lowering functions in the semiconductor reactor, meeting the requirements of complex epitaxial processes. The magnetic fluid assembly has a biaxial structure, including an inner bushing, an outer bushing, and a base bushing arranged sequentially from the center outwards. A first magnetic fluid structure is disposed between the inner and outer bushings, and a second magnetic fluid structure is disposed between the outer bushing and the base bushing. The double-layer magnetic fluid seal forms two sealed magnetic fluid layers, better resisting the pressure difference between the inside and outside of the reaction chamber, providing stronger sealing performance, and facilitating the flattening of the overall structure of the magnetic fluid assembly. The connecting cavity within the inner bushing has a larger capacity, good versatility, and can accommodate more components. This meets the installation requirements of the electrode heating assembly and the ejector pin mechanism, which need to extend from the outside of the magnetic fluid assembly through the connecting cavity to the reaction chamber, reducing the overall installation difficulty of the chemical vapor deposition equipment with the aforementioned semiconductor reactor. Attached Figure Description

[0032] Figure 1 This is a partial structural front view of the semiconductor reactor provided in an embodiment of the present invention;

[0033] Figure 2 This is a schematic diagram of the structure of the magnetic fluid assembly connected to the rotating housing provided in an embodiment of the present invention;

[0034] Figure 3 This is a structural cross-sectional view of the magnetofluid assembly provided in an embodiment of the present invention;

[0035] Figure 4 This is a cross-sectional view of the electrode heating assembly provided in an embodiment of the present invention;

[0036] Figure 5 This is a partial structural schematic diagram of the base assembly provided in an embodiment of the present invention;

[0037] Figure 6 This is a partial structural cross-section of the magnetohydrodynamic assembly provided in an embodiment of the present invention. Figure 1 ;

[0038] Figure 7This is a partial structural cross-section of the magnetohydrodynamic assembly provided in an embodiment of the present invention. Figure 2 ;

[0039] Figure 8 This is a structural cross-sectional view of the inner bushing provided in an embodiment of the present invention;

[0040] Figure 9 This is a partial structural schematic diagram of the inner bushing provided in an embodiment of the present invention;

[0041] Figure 10 This is a structural cross-sectional view of the base bushing provided in an embodiment of the present invention;

[0042] Figure 11 This is a partial structural cross-sectional view of the electrode heating assembly provided in an embodiment of the present invention;

[0043] Figure 12 yes Figure 11 A magnified view of part A in the middle;

[0044] Figure 13 This is a structural cross-sectional view of the sleeve connection flange provided in an embodiment of the present invention;

[0045] Figure 14 This is a top view of the sleeve connection flange provided in an embodiment of the present invention.

[0046] In the picture:

[0047] 1. Magnetofluid assembly; 11. Rotary motor; 111. Stator; 112. Rotor; 121. Inner bushing; 1211. Communicating cavity; 1212. First water-cooling cavity; 1213. First water inlet; 1214. First water outlet; 1215. Water-proof layer; 122. Outer bushing; 123. Base bushing; 1231. Second water-cooling cavity; 1232. Second water inlet; 1233. Second water outlet; 1234. First sealing ring; 13. First magnetofluid structure; 131. First magnetic pole ring; 132. First magnet; 133. First magnetic pole piece; 134. First spacer ring; 35. Dustproof ring; 14. Second magnetohydrodynamic structure; 141. Second magnetic pole ring; 142. Second magnet; 143. Second magnetic pole piece; 144. Second spacer ring; 151. Bottom positioning plate; 152. Mounting retaining ring; 153. Support end cover; 154. Support sleeve; 155. Sleeve connecting flange; 1551. First boss; 1552. Second boss; 156. Adapter flange; 157. Washer ring; 158. Fastener; 159. Compression nut; 161. First bearing structure; 1611. First bearing body; 162. Second bearing structure; 1621. Second bearing body;

[0048] 2. Electrode heating assembly; 21. Electrode structure; 211. Heating electrode disk; 212. Graphite plate; 213. First graphite felt; 214. Graphite gasket; 215. Quartz disk; 216. Insulation column; 217. Support column; 22. Graphite electrode shaft; 23. Second insulation structure; 231. Quartz sleeve; 232. Second graphite felt; 241. First sealing flange; 242. Second sealing flange; 243. Graphite guide sleeve; 244. Second sealing ring; 25. Water-cooled electrode structure; 26. Lower electrode raising block;

[0049] 3. Base assembly; 31. Rotating cover; 32. Ejector pin mechanism; 321. Lifting shaft; 3211. Quartz lifting shaft; 3212. Support lifting shaft; 322. Ejector pin; 323. Ejector pin base; 331. Lifting drive component; 332. Module mounting base; 34. Guide mechanism; 341. Guide sleeve; 342. Guide shaft; 343. Lifting plate; 351. Lifting flange; 352. Lifting bellows. Detailed Implementation

[0050] The technical solution of the present invention will now be clearly and completely described with reference to the accompanying drawings. Obviously, the described embodiments are only some, not all, of the embodiments of the present invention. Based on the embodiments of the present invention, all other embodiments obtained by those skilled in the art without creative effort are within the scope of protection of the present invention.

[0051] In the description of this invention, it should be noted that the terms "center," "upper," "lower," "left," "right," "vertical," "horizontal," "inner," and "outer," etc., indicate the orientation or positional relationship based on the orientation or positional relationship shown in the accompanying drawings. They are used only for the convenience of describing the invention and for simplifying the description, and do not indicate or imply that the device or element referred to must have a specific orientation, or be constructed and operated in a specific orientation. Therefore, they should not be construed as limitations on the invention. Furthermore, the terms "first" and "second" are used for descriptive purposes only and should not be construed as indicating or implying relative importance. The terms "first position" and "second position" refer to two different positions. Furthermore, "above," "on top of," and "over" the first feature in relation to the second feature includes the first feature directly above and diagonally above the second feature, or simply indicates that the first feature is at a higher horizontal level than the second feature. "Below," "under," and "below" the first feature in relation to the second feature includes the first feature directly below and diagonally below the second feature, or simply indicates that the first feature is at a lower horizontal level than the second feature.

[0052] In the description of this invention, it should be noted that, unless otherwise explicitly specified and limited, the terms "installation," "connection," and "linking" should be interpreted broadly. For example, they can refer to a fixed connection, a detachable connection, or an integral connection; they can refer to a mechanical connection or an electrical connection; they can refer to a direct connection or an indirect connection through an intermediate medium; and they can refer to the internal connection of two components. Those skilled in the art can understand the specific meaning of the above terms in this invention based on the specific circumstances.

[0053] Embodiments of the present invention are described in detail below. Examples of these embodiments are shown in the accompanying drawings, wherein the same or similar reference numerals denote the same or similar elements or elements having the same or similar functions throughout. The embodiments described below with reference to the accompanying drawings are exemplary and are only used to explain the present invention, and should not be construed as limiting the present invention.

[0054] like Figures 1 to 14 As shown, this embodiment first provides a semiconductor reactor, which can be applied to processing equipment that requires wafer surface treatment. Wafer surface treatment includes, but is not limited to, etching, deposition, epitaxy and other processing processes, and the processing equipment includes, but is not limited to, chemical vapor deposition equipment.

[0055] The semiconductor reactor includes a cavity assembly (not shown) having a reaction chamber for housing a wafer. Wafer epitaxy processes require the reaction chamber to provide a high-temperature, sealed environment, within which the wafer rotates to form an epitaxial layer.

[0056] The semiconductor reactor also includes a magnetic fluid assembly 1, an electrode heating assembly 2, and a base assembly 3. The magnetic fluid assembly 1 includes a rotary motor 11 and, from the center outwards, an inner bushing 121, an outer bushing 122, and a base bushing 123. A first magnetic fluid structure 13 is disposed between the inner bushing 121 and the outer bushing 122, and a second magnetic fluid structure 14 is disposed between the outer bushing 122 and the base bushing 123. The inner bushing 121 has a through-hole 1211, which is connected to the reaction chamber. The rotary motor 11 drives the outer bushing 122 to rotate, and one end of the base bushing 123 is sealed to the chamber assembly. The rotation of the outer bushing 122 causes the magnetic field force to firmly fix the magnetic fluid within the first magnetic fluid structure 13 and the second magnetic fluid structure 14, forming a sealing ring that seals the reaction chamber of the chamber assembly. The electrode heating assembly 2 includes an electrode structure 21 for heating the reaction chamber. The electrode heating assembly 2 passes through the connecting cavity 1211, and the electrode structure 21 is located inside the reaction chamber, creating a high-temperature environment inside the reaction chamber. The magnetic fluid assembly 1 is suitable for high-temperature operating environments, and its sealing performance is not affected by the temperature of the electrode structure 21. The base assembly 3 includes a rotating housing 31 and a pin mechanism 32 passing through the connecting cavity 1211. The rotating housing 31 is located inside the reaction chamber, and one open end is connected to the outer bushing 122. The rotational property of the outer bushing 122, which is necessary for forming a magnetic fluid seal, serves as the power source for rotating the rotating housing 31. The rotating housing 31 can drive the wafer to rotate, meeting the process conditions for wafer epitaxy. The pin mechanism 32 is axially and vertically mounted inside the reaction chamber. The pin mechanism 32 is used to lift and lower the wafer, cooperating with the robot arm to pick up and place the wafer, and finally placing the wafer on the rotating housing 31. The wafer rotates with the rotating housing 31, and after reaching a certain speed, the epitaxial growth process begins.

[0057] The semiconductor reactor provided in this embodiment integrates magnetic fluid rotary sealing, heating the reaction chamber temperature, and wafer lifting / lowering functions, meeting the requirements of complex epitaxial processes. The magnetic fluid assembly 1 has a biaxial structure, including an inner bushing 121, an outer bushing 122, and a base bushing 123 arranged sequentially from the center outwards. A first magnetic fluid structure 13 is provided between the inner bushing 121 and the outer bushing 122, and a second magnetic fluid structure 14 is provided between the outer bushing 122 and the base bushing 123. The double-layer magnetic fluid seal forms two sealed magnetic fluid layers, better resisting the pressure difference between the inside and outside of the reaction chamber, resulting in stronger sealing performance. This facilitates the flattening of the overall structure of the magnetic fluid assembly 1. The connecting cavity 1211 within the inner bushing 121 has a larger capacity, good versatility, and can accommodate more components. This meets the installation requirements of both the electrode heating assembly 2 and the ejector pin mechanism 32, which need to extend from the outside of the magnetic fluid assembly 1 through the connecting cavity 1211 to the reaction chamber, reducing the overall installation difficulty of the semiconductor reactor.

[0058] The upper end of the base bushing 123 is connected to the cavity assembly. A first sealing ring 1234 is provided between the upper end face of the base bushing 123 and the cavity assembly. The first sealing ring 1234 is an O-ring made of fluororubber, which achieves a vacuum seal between the base bushing 123 and the cavity assembly. The rotating cover 31 is made of graphite, which has good high-temperature resistance.

[0059] The semiconductor reactor also includes a worktable (not shown in the figure), and the magnetofluid assembly 1 also includes a bottom positioning plate 151, a mounting retaining ring 152, and a support end cap 153, as shown. Figure 3 As shown. A bottom positioning plate 151 is located at the bottom and is detachably connected to the worktable, which supports the entire semiconductor reactor. The bottom positioning plate 151 and the worktable are connected by screws. A rotary motor 11 and an inner bushing 121 are mounted on the bottom positioning plate 151. A mounting ring 152 is connected to the stator 111 of the rotary motor 11 and the end of the base bushing 123 away from the cavity assembly. A support end cap 153 is connected to the rotor 112 of the rotary motor 11 and the end of the outer bushing 122 away from the rotating housing 31. The rotor 112 drives the outer bushing 122 to rotate via the support end cap 153. This arrangement makes the structure of the magnetohydrodynamic assembly 1 relatively compact.

[0060] The first magnetofluid structure 13 and the second magnetofluid structure 14 are both located above the rotary motor 11, which facilitates the flattening of the magnetofluid assembly 1. The magnetofluid assembly 1 also includes a first bearing structure 161 disposed between the inner bushing 121 and the outer bushing 122, and a second bearing structure 162 disposed between the outer bushing 122 and the base bushing 123. The first bearing structure 161 supports the outer bushing 122 to rotate relative to the inner bushing 121, and the second bearing structure 162 supports the outer bushing 122 to rotate relative to the base bushing 123. One side of the support end cap 153 extends radially from the outer bushing 122 toward the inner bushing 121, and the support end cap 153 supports the first bearing structure 161 while supporting the outer bushing 122; one side of the mounting retaining ring 152 extends radially from the base bushing 123 toward the outer bushing 122, and the mounting retaining ring 152 supports the second bearing structure 162 while supporting the base bushing 123.

[0061] The second bearing structure 162 includes two second bearing bodies 1621 spaced apart along the axial direction, and the second magnetofluid structure 14 is disposed between the two second bearing bodies 1621. The base sleeve 123 supports the cavity assembly. Since the base sleeve 123 bears a large load, the size of the second bearing structure 162 is larger than the size of the first bearing structure 161. Also, to accommodate the size of the cavity assembly, the distance between the base sleeve 123 and the outer sleeve 122 is relatively large. Therefore, placing the second magnetofluid structure 14 between the two second bearing bodies 1621 saves axial dimensions and facilitates the flattening of the magnetofluid assembly 1.

[0062] The first bearing structure 161 includes two first bearing bodies 1611 spaced apart along the axial direction, and the first magnetofluid structure 13 is disposed above the two first bearing bodies 1611. In this way, the axial dimensions of the first bearing structure 161 and the first magnetofluid structure 13 are comparable to the axial dimensions of the second bearing structure 162 and the second magnetofluid structure 14, and the overall structure of the magnetofluid assembly 1 is relatively compact.

[0063] The second magnetofluid structure 14 includes a second magnetic pole ring 141, which has a sealed magnetofluid channel filled with magnetic fluid. The second magnetic pole ring 141 is fitted onto an outer bushing 122. The two ends of the second magnetic pole ring 141 abut against two second bearing bodies 1621 respectively. The second magnetic pole ring 141 can support the two second bearing structures 162, eliminating the need for additional support components and simplifying the structure.

[0064] The magnetofluid assembly 1 further includes at least one support sleeve 154, which is fitted onto the inner bushing 121. The two ends of the support sleeve 154 abut against two first bearing bodies 1611, respectively. In one embodiment, the magnetofluid assembly 1 includes two support sleeves 154, which are radially spaced and fitted onto the outer side of the inner bushing 121. The two support sleeves 154 are coaxially arranged and simultaneously support the first bearing structure 161, improving the structural stability of the first bearing structure 161.

[0065] To achieve connection with the rotating housing 31, the magnetofluid assembly 1 also includes a sleeve connecting flange 155, a transition flange 156, and a gasket 157. The transition flange 156 is disposed on the upper end face of the outer bushing 122, and the sleeve connecting flange 155 connects the transition flange 156 and the rotating housing 31. The gasket 157 is disposed at the flange end of the sleeve connecting flange 155. Fasteners 158 are sequentially passed through the gasket 157, the flange end of the sleeve connecting flange 155, and the transition flange 156 to connect to the outer bushing 122. The transition flange 156 is made of graphite, which has good high temperature resistance and corrosion resistance, and can withstand temperatures above 1600℃, preventing the sleeve connecting flange 155 from directly contacting the metal structure of the magnetofluid assembly 1. The sleeve connecting flange 155 is made of quartz, which can withstand the high temperature of 1600℃ in the reaction chamber without melting. Gasket 157 is placed on the upper surface of the flange end of sleeve connection flange 155. Gasket 157 is made of graphite to prevent fastener 158 from directly contacting the flange end of sleeve connection flange 155. Fastener 158 is a molybdenum bolt, which has high temperature resistance and corrosion resistance. The adapter flange 156, sleeve connection flange 155, gasket 157, and fastener 158 are all made of high temperature and corrosion resistant materials, which can effectively prevent high-temperature oxidation and corrosion of parts caused by excessive temperature in the reaction chamber, ensuring the processability and stability of the wafer epitaxial equipment, extending its service life, and reducing maintenance costs.

[0066] Specifically, the sleeve connection flange 155 has two boss structures, namely a first boss 1551 and a second boss 1552, as follows: Figure 13 and Figure 14 As shown. Three first bosses 1551 are located on the upper part of the sleeve connecting flange 155, arranged circumferentially. The first bosses 1551 connect to the rotating housing 31, reducing rapid heat transfer between them and preventing excessive heat conduction to the bottom of the magnetic fluid assembly 1. Eight second bosses 1552 are located at the bottom of the sleeve connecting flange 155, with an opening in the center to connect to the lower outer bushing 122. This connection using bosses with a small contact area reduces the heat transfer contact area between the sleeve connecting flange 155 and the outer bushing 122, thus preventing rapid evaporation of the magnetic fluid inside the magnetic fluid assembly 1 due to excessive heat transfer, which would affect the stability of the rotary seal of the magnetic fluid assembly 1. Furthermore, the quartz sleeve connecting flange 155 has a low thermal conductivity, significantly reducing the temperature transfer rate, increasing the temperature gradient, and preventing excessive heat transfer.

[0067] like Figure 6As shown, to further reduce the operating temperature of the magnetohydrodynamic assembly 1, a first water-cooling cavity 1212 is provided inside the inner bushing 121. The first water-cooling cavity 1212 has a first inlet 1213 and a first outlet 1214 that connect to an external water-cooling system (not shown in the figure) to form a circulating cooling channel, such as... Figure 8 As shown. The first water-cooled cavity 1212 cools the first magnetofluid structure 13 while also reducing the internal temperature of the connecting cavity 1211, providing a stable operating environment for the electrode heating assembly 2 and the base assembly 3. This prevents the electrode heating assembly 2 and the ejector pin mechanism 32, which are installed in the connecting cavity 1211, from overheating and affecting normal operation, thus improving the service life of the semiconductor reactor. Moreover, excessively high temperatures within the connecting cavity 1211 can also affect the reaction chamber, thereby impacting the consistency of the wafer epitaxial process.

[0068] A second water-cooling cavity 1231 is provided inside the base bushing 123. The second water-cooling cavity 1231 has a second water inlet 1232 and a second water outlet 1233 that connect to an external water-cooling system to form a circulating cooling channel, such as... Figure 10 As shown. The second water-cooled cavity 1231 is used to cool the second magnetohydrodynamic structure 14 and reduce the heat transferred from the cavity assembly to the base bushing 123. The second water-cooled cavity 1231 consists of at least two water-cooling channels spaced apart along the axial direction.

[0069] Specifically, the first water-cooling cavity 1212 extends from bottom to top along the axial direction of the inner bushing 121, effectively cooling the entire circumference of the inner bushing 121. Furthermore, the first water inlet 1213 and the first water outlet 1214 of the first water-cooling cavity 1212 can be located at the bottom of the inner bushing 121 for easy connection to an external water-cooling system. A water-cooling groove is formed on the outer surface of the inner bushing 121, and multiple water-resistant layers 1215 are spaced apart along the axial direction of the inner bushing 121 within the water-cooling groove, such as... Figure 9 As shown. The water-proof layer 1215 extends circumferentially along the inner bushing 121, and water-cooling channels are formed between adjacent water-proof layers 1215, with two adjacent water-cooling channels interconnected. The water-cooling tank is connected to the first water-cooling cavity 1212, and the coolant in the first water-cooling cavity 1212 can flow to the water-cooling tank.

[0070] The first magnetofluid structure 13 includes a first magnetic pole ring 131, within which a sealed magnetofluid channel is formed and filled with magnetofluid. The first magnetic pole ring 131 is fitted onto an inner bushing 121, sealing the opening of the water-cooling tank. The water-cooling channel cools the first magnetic pole ring 131. The coolant directly cools the first magnetic pole ring 131, resulting in high cooling efficiency. Furthermore, the method of sealing the water-cooling tank opening with the first magnetic pole ring 131 reduces the axial dimension of the magnetofluid assembly 1 while simultaneously closing the water-cooling channel. Moreover, the method of forming the water-cooling channel by machining a water-insulating layer 1215 into the water-cooling tank opening is relatively simple. The water-insulating layer 1215 has notches to allow adjacent water-cooling channels to communicate with each other.

[0071] In addition to the first magnetic pole ring 131, the first magnetofluid structure 13 also includes a first magnet 132 and a first magnetic pole piece 133. The first magnet 132 has first magnetic pole pieces 133 on both its upper and lower sides, ensuring magnetism throughout the entire area between the inner bushing 121 and the outer bushing 122. A first spacer ring 134 is installed above the first bearing structure 161 to support the first magnet 132 and isolate the first bearing structure 161 and the first magnet 132. The outer periphery of the first magnetic pole ring 131 forms a multi-layered concave-convex region, with magnetic fluid adhering to the recesses. The first magnetic pole pieces 133 and the first magnet 132 are fitted onto the outside of the first magnetic pole ring 131 to seal the concave-convex region and form a sealed magnetofluid channel. A dustproof ring 135 of the first magnetofluid structure 13 is positioned above the top first magnetic pole piece 133 to isolate external particles and prevent particles in the reaction chamber from contaminating the internal environment of the first magnetofluid structure 13.

[0072] Regarding the second magnetofluid structure 14, similarly, the outer periphery of the second magnetic pole ring 141 forms a multi-layered concave-convex region, with magnetic fluid adhering to the recesses. The second magnetofluid structure 14 also includes a second magnet 142 and a second magnetic pole piece 143. The second magnet 142 has second magnetic pole pieces 143 on both its upper and lower sides. The second magnet 142 and the second magnetic pole pieces 143 are fitted onto the outside of the second magnetic pole ring 141 to seal the concave-convex region and form a sealed magnetofluid channel. A second spacer ring 144 is provided on the outer side of each of the two second magnetic pole pieces 143. The second spacer ring 144 serves as support and isolation, isolating the second magnetic pole pieces 143 and the second bearing body 1621. Finally, the second magnetofluid structure 14 and the second bearing structure 162 are pressed together by the upper clamping nut 159 (see reference). Figure 7 The second magnetohydrodynamic structure 14 and the second bearing structure 162 are constrained between the base bushing 123, the outer bushing 122 and the mounting retaining ring 152.

[0073] like Figure 4As shown, in order to provide electrical energy for heating the electrode structure 21, the electrode heating assembly 2 also includes a graphite electrode shaft 22. The graphite electrode shaft 22 passes through the communicating cavity 1211 and extends along the axial direction of the communicating cavity 1211. One end of the graphite electrode shaft 22 is electrically connected to an external power source, and the other end is connected to the electrode structure 21. The electrode structure 21 is disposed in the rotating cover 31, which facilitates heating the wafer from below and improves the efficiency of the epitaxial process.

[0074] The electrode structure 21 includes a heating electrode disk 211 and a first heat insulation structure. The heating electrode disk 211 extends radially along the rotating housing 31, forming a disk-mounted structure, which provides more uniform heating of the wafer. The heating electrode disk 211 is electrically connected to the graphite electrode shaft 22. The first heat insulation structure includes at least one layer of graphite plate 212 and / or a first graphite felt 213, and is disposed below the heating electrode disk 211. Under the heat insulation and heat preservation effect of the first heat insulation structure, the heating electrode disk 211 can raise the temperature inside the reaction chamber in a short time, thereby improving the efficiency of wafer epitaxial growth.

[0075] In one embodiment, the first thermal insulation structure includes five layers of graphite plates 212, with a graphite gasket ring 214 sandwiched between adjacent layers of graphite plates 212, such as... Figure 12 As shown, this provides excellent temperature insulation, ensuring stable reaction temperatures. Furthermore, the temperature of each graphite plate 212 decreases gradually from top to bottom, providing insulation while also maintaining the process temperatures required for wafer epitaxy. This temperature can be adjusted according to the thickness, number of layers, and area of ​​the graphite plate 212, offering strong versatility and applicability to various operating conditions. A first graphite felt 213 is positioned below the bottom graphite plate 212.

[0076] The first thermal insulation structure also includes a quartz disk 215, a thermal insulation column 216, and a support column 217, such as Figure 11 As shown. Graphite plate 212 and first graphite felt 213 are located above quartz disk 215, and are supported by heat-insulating pillar 216. Support pillar 217 is located at the edge of quartz disk 215, and supports heating electrode disk 211 at its top. Heating electrode disk 211 consists of an inner electrode and an outer electrode surrounding the outer periphery of the inner electrode, and can quickly reach the reaction temperature under the electrical energy transmission of graphite electrode shaft 22.

[0077] It should be noted that the ejector mechanism 32 can pass through the first heat insulation structure and the heating electrode disk 211 and extend upward to support the wafer above the heating electrode disk 211. Furthermore, the graphite electrode shaft 22 also extends from the connecting cavity 1211 into the reaction chamber. To provide guidance and protection for the graphite electrode shaft 22 and the ejector mechanism 32, the electrode heating assembly 2 also includes a second heat insulation structure 23. The second heat insulation structure 23 includes a quartz sleeve 231 and a second graphite felt 232 disposed within the quartz sleeve 231. The graphite electrode shaft 22 and the ejector mechanism 32 pass through the second graphite felt 232. The second graphite felt 232 isolates the graphite electrode shaft 22 and the ejector mechanism 32, reducing mutual interference and temperature influence. Moreover, the second heat insulation structure 23 is located above the magnetohydrodynamic assembly 1 and inside the reaction chamber, which can reduce the influence of the high-temperature environment inside the reaction chamber on the graphite electrode shaft 22 and the ejector mechanism 32. The thickness of the second graphite felt 232 is 60mm to 100mm.

[0078] The electrode heating assembly 2 is installed via a first sealing flange 241 and a second sealing flange 242. The second sealing flange 242 is sealed to the top of the inner bushing 121, and the second heat insulation structure 23 is connected above the second sealing flange 242. The second sealing flange 242 supports the second heat insulation structure 23 while sealingly isolating the reaction chamber and the connecting chamber 1211. To improve the reliability and sealing of the connection between the electrode heating assembly 2 and the inner bushing 121, the top of the inner bushing 121 has a boss structure. The second sealing flange 242 and the boss structure are connected by threads using screws or other fasteners. The connection between the second sealing flange 242 and the inner bushing 121 supports the entire electrode heating assembly 2.

[0079] The first sealing flange 241 serves multiple purposes. It connects to the worktable, fixing the electrode heating assembly 2 in place. Simultaneously, it has multiple guide holes that allow multiple graphite electrode shafts 22 and ejector mechanisms 32 to pass through, guiding them and preventing deformation. Therefore, the first sealing flange 241 requires sufficient hardness and strength, and can be made of 316 stainless steel. To enhance the sealing performance between the first sealing flange 241 and the worktable, a second sealing ring 244 is installed between the first sealing flange 241 and the lower side of the worktable. The second sealing ring 244 is an O-ring made of fluororubber. Through the sealing connection of the first sealing flange 241, the connecting cavity 1211 is sealed and isolated from the external environment. The ejector mechanism 32 passes sequentially through the first sealing flange 241 and the second sealing flange 242 and extends upwards.

[0080] The graphite electrode shaft 22 generates heat during conduction. Therefore, the electrode heating assembly 2 also includes a water-cooled electrode structure 25. One end of the water-cooled electrode structure 25 is located below the first sealing flange 241 and passes through the first sealing flange 241 to connect to the graphite electrode shaft 22. The graphite electrode shaft 22 passes through the second sealing flange 242 and extends upward. The end of the water-cooled electrode structure 25 away from the graphite electrode shaft 22 is electrically connected to an external power source. The water-cooled electrode structure 25 conducts electrical energy from bottom to top. While conducting electrical energy, it has internal water-cooling channels, effectively reducing the heat from the heating electrode plate 211 conducted downward through the graphite electrode shaft 22. This allows the components below the worktable to maintain a relatively low temperature, reducing component wear and equipment maintenance costs. The water-cooled electrode structure 25 and the graphite electrode shaft 22 are connected by a stainless steel lower electrode raising block 26. The lower electrode raising block 26 is made of stainless steel, which is corrosion-resistant, oxidation-resistant, and has good conductivity, effectively conducting electrical energy between the water-cooled electrode structure 25 and the graphite electrode shaft 22.

[0081] Since the ejector mechanism 32 has a change in cross-sectional size in the axial direction, and the cross-sectional size below the second sealing flange 242 is larger than the cross-sectional size above the second sealing flange 242, in order to avoid the shaft section with a slightly larger cross-sectional size from contacting the lower end face of the second sealing flange 242 during the lifting and lowering process of the ejector mechanism 32, a graphite guide sleeve 243 is provided on the lower end face of the second sealing flange 242, and the graphite guide sleeve 243 is pressed onto the second sealing flange 242 by a graphite guide sleeve pressure plate.

[0082] To enable the lifting and lowering of the ejector pin mechanism 32, the base assembly 3 further includes a lifting drive 331. The ejector pin mechanism 32 includes a lifting shaft 321 and ejector pins 322 disposed at the end of the lifting shaft 321. A movably connected tray (not shown) is provided at the end of the rotating housing 31 away from the magnetohydrodynamic assembly 1. The tray is used to support the wafer. The end of the lifting shaft 321 away from the ejector pins 322 is connected to the lifting drive 331. The lifting drive 331 drives the lifting shaft 321 to move up and down axially along the communicating cavity 1211. The lifting shaft 321 can either raise the ejector pins 322 to lift the tray away from the rotating housing 31, or lower the ejector pins 322 to connect the tray to the rotating housing 31. Figure 5 As shown, to ensure the stability of the wafer-lifting mechanism 32, the mechanism 32 has at least three ejector pins 322, which are connected to the lifting shaft 321 via ejector pin bases 323. Both the ejector pins 322 and the ejector pin bases 323 are made of high-temperature and corrosion-resistant graphite material.

[0083] The base assembly 3 also includes a guiding mechanism 34, which comprises a guide sleeve 341, a guide shaft 342, and a lifting plate 343. The guide sleeve 341 is fixed in position, and the guide shaft 342 is axially reciprocatingly connected to the guide sleeve 341. The guide shaft 342 and the lifting shaft 342 are parallel to each other. The end of the guide shaft 342 away from the guide sleeve 341 and the end of the lifting shaft 321 away from the ejector pin 322 are both connected to the lifting plate 343. The lifting plate 343 is connected to the output end of the lifting drive component 331 to simultaneously drive the guide shaft 342 and the lifting shaft 321 to rise and fall. The guiding mechanism 34 guides the rising and falling of the lifting shaft 321, improving the wafer's positional accuracy. Preferably, two sets of guide sleeves 341 and guide shafts 342 are provided, with the lifting shaft 321 located in the middle of the lifting plate 343. The two sets of guide sleeves 341 and guide shafts 342 are respectively located on both sides of the lifting shaft 321, resulting in better guiding performance.

[0084] The base assembly 3 also includes a lifting flange 351 and a lifting bellows 352. One end of the lifting flange 351 is sealed to the lower side of the worktable. The lifting bellows 352 is fitted around the lifting shaft 321, with one end connected to the lifting flange 351 and the other end connected to the lifting plate 343. The lifting plate 343 passes through the lifting flange 351 to connect to the lifting flange 343. During the lifting process of the lifting plate 343, the lifting bellows 352 will be compressed or expanded accordingly. The lifting bellows 352 improves the sealing of the connection between the base assembly 3 and the worktable, preventing external air from entering the communicating cavity 1211 with the lifting movement of the lifting shaft 321.

[0085] The guide sleeve 341, lifting flange 351, and module mounting base 332 for mounting the lifting drive component 331 are all installed on the lower side of the worktable, improving the stability of the ejector pin 322's lifting process, ensuring that the ejector pin 322 will not be eccentric during lifting, and avoiding phenomena such as slippage during the lifting and lifting of the wafer by the ejector pin 322. The lifting drive component 331 adopts a linear module, which is mounted on the module mounting base 332 and positioned below the worktable via the module mounting base 332. The linear module has high motion accuracy and good repeatability. The module mounting base 332 is equipped with multiple photoelectric sensors, which are communicatively connected to the linear module. The photoelectric sensors can sense the lifting height of the ejector pin 322. The lifting height of the ejector pin 322 is determined by the height position of the wafer in the epitaxial process, and the number of photoelectric sensors is set according to the different heights at which the ejector pin 322 needs to stop. For example, the ejector pin 322 has three height positions: initial height, raised height, and lowered height, thereby raising or lowering the wafer. Therefore, three photoelectric sensors are set accordingly. After the photoelectric sensors detect that the ejector pin 322 has reached the corresponding position, the linear module stops operating to ensure the accuracy of the height position of the ejector pin 322, thereby improving the wafer position accuracy and ensuring the process effect.

[0086] The lifting shaft 321 includes a quartz lifting shaft 3211 and a supporting lifting shaft 3212 that are interconnected and coaxially arranged. The quartz lifting shaft 3211 passes through the inner bushing 121. One end of the quartz lifting shaft 3211 extends into the reaction chamber to connect to the ejector pin 322, and the other end connects to the supporting lifting shaft 3212. The other end of the supporting lifting shaft 3212, away from the quartz lifting shaft 3211, connects to the lifting drive component 331. The quartz lifting shaft 3211 and the supporting lifting shaft 3212 are connected by a pad. The quartz lifting shaft 3211 is made of high-temperature resistant quartz material, suitable for high-temperature reaction chambers. The supporting lifting shaft 3212 is made of metal, has good structural strength, and provides support for the quartz lifting shaft 3211.

[0087] The linear module uses a slider as its output end, and a floating joint connects the slider and the lifting plate 343. The slider drives the lifting plate 343 to move, thereby realizing the lifting motion of the lifting shaft 321. The floating joint can absorb the eccentricity between the slider and the lifting plate 343, reducing the relative precision requirements between them. The lifting plate 343 can always remain horizontal during the lifting process, preventing the lifting shaft 321 from jamming.

[0088] The semiconductor reactor is used as follows: An external robotic arm (not shown in the figure) transports the wafer into the reaction chamber, above the rotating housing 31; the ejector pin 322 rises, lifting the tray on the rotating housing 31 to receive the wafer, preventing the external robotic arm from colliding with the rotating housing 31; then the robotic arm retracts, the ejector pin 322 descends, and the tray carrying the wafer falls back onto the rotating housing 31; while the electrode heating assembly 2 heats the temperature inside the reaction chamber to 1600°C, reaching the condition temperature for the epitaxial reaction, the outer bushing 122 of the magnetofluid assembly 1 rotates to provide a magnetofluid seal while simultaneously driving the rotating housing 31 to begin operation, allowing the wafer to undergo epitaxial processing in a high-speed rotating, high-temperature, and clean environment. After the process is completed, the ejector pin 322 lifts the tray carrying the wafer again, and the external robotic arm removes the wafer.

[0089] This embodiment further provides a chemical vapor deposition (CVD) apparatus, which includes a semiconductor reactor as described in any of the above embodiments. The semiconductor reactor integrates magnetohydrodynamic (MHD) rotary sealing, heating of the reaction chamber temperature, and wafer lifting / lowering functions, meeting the complex epitaxial process requirements of the CVD apparatus. The MHD assembly 1 has a biaxial structure, including an inner bushing 121, an outer bushing 122, and a base bushing 123 arranged sequentially from the center outwards. A first MHD structure 13 is provided between the inner bushing 121 and the outer bushing 122, and a second MHD structure 14 is provided between the outer bushing 122 and the base bushing 123. The double-layer magnetofluid seal can form two sealed magnetic fluid layers, which can better resist the pressure difference between the inside and outside of the reaction chamber and have stronger sealing performance. It is conducive to realizing the flattening of the overall structure of the magnetofluid assembly 1. The connecting cavity 1211 in the inner bushing 121 has a larger capacity, good versatility, and can accommodate more parts. It meets the installation requirements of the electrode heating assembly 2 and the ejector pin mechanism 32, which need to extend from the outside of the magnetofluid assembly 1 through the connecting cavity 1211 to the reaction chamber. This reduces the overall installation difficulty of the chemical vapor deposition equipment.

[0090] Obviously, the above embodiments of the present invention are merely examples for clearly illustrating the present invention, and are not intended to limit the implementation of the present invention. Those skilled in the art will be able to make various obvious changes, readjustments, and substitutions without departing from the scope of protection of the present invention. It is neither necessary nor possible to exhaustively describe all embodiments here. Any modifications, equivalent substitutions, and improvements made within the spirit and principles of the present invention should be included within the scope of protection of the claims of the present invention.

Claims

1. A semiconductor reactor, comprising a cavity assembly having a reaction chamber for receiving a wafer, characterized in that, The semiconductor reactor also includes: A magnetic fluid assembly (1) includes a rotary motor (11) and an inner bushing (121), an outer bushing (122), and a base bushing (123) arranged sequentially from the center of the shaft to the outside. A first magnetic fluid structure (13) is provided between the inner bushing (121) and the outer bushing (122), and a second magnetic fluid structure (14) is provided between the outer bushing (122) and the base bushing (123). The inner bushing (121) has a through cavity (1211) with both ends connected to the reaction cavity. The rotary motor (11) drives the outer bushing (122) to rotate. One end of the base bushing (123) is sealed and connected to the cavity assembly. An electrode heating assembly (2) includes an electrode structure (21) for heating the reaction chamber, and the electrode heating assembly (2) is disposed within the communicating cavity (1211). The base assembly (3) includes a rotating housing (31) and a pin mechanism (32) passing through the communicating cavity (1211). The rotating housing (31) is disposed in the reaction cavity and one open end is connected to the outer bushing (122). The rotating housing (31) can drive the wafer to rotate. The pin mechanism (32) is axially and vertically disposed in the reaction cavity. The pin mechanism (32) is used to lift the wafer.

2. The semiconductor reactor according to claim 1, characterized in that, The semiconductor reactor also includes a worktable, and the magnetofluid assembly (1) also includes a bottom positioning plate (151), a mounting retaining ring (152), and a support end cap (153). The bottom positioning plate (151) is detachably connected to the worktable, which is used to support the magnetofluid assembly (1). The rotary motor (11) and the inner bushing (121) are disposed on the bottom positioning plate (151). The mounting retaining ring (152) is connected to the stator (111) of the rotary motor (11) and the end of the base bushing (123) away from the cavity assembly. The support end cap (153) is connected to the rotor (112) of the rotary motor (11) and the end of the outer bushing (122) away from the rotating cover (31).

3. The semiconductor reactor according to claim 2, characterized in that, The first magnetofluid structure (13) and the second magnetofluid structure (14) are both located above the rotary motor (11). The magnetofluid assembly (1) also includes a first bearing structure (161) disposed between the inner bushing (121) and the outer bushing (122), and a second bearing structure (162) disposed between the outer bushing (122) and the base bushing (123). One side of the support end cap (153) extends radially from the outer bushing (122) toward the inner bushing (121) to support the first bearing structure (161), and one side of the mounting retaining ring (152) extends radially from the base bushing (123) toward the outer bushing (122) to support the second bearing structure (162).

4. The semiconductor reactor according to claim 3, characterized in that, The second bearing structure (162) includes two second bearing bodies (1621) spaced apart along the axial direction, and the second magnetohydrodynamic structure (14) is disposed between the two second bearing bodies (1621); and / or, The first bearing structure (161) includes two first bearing bodies (1611) spaced apart along the axial direction, and the first magnetohydrodynamic structure (13) is disposed above the two first bearing bodies (1611).

5. The semiconductor reactor according to claim 3, characterized in that, The second bearing structure (162) includes two second bearing bodies (1621) spaced apart along the axial direction. The second magnetofluid structure (14) includes a second magnetic pole ring (141). A sealed magnetofluid channel is formed inside the second magnetic pole ring (141), and the magnetofluid channel is filled with magnetic fluid. The second magnetic pole ring (141) is fitted onto the outer bushing (122), and the two ends of the second magnetic pole ring (141) respectively abut against the two second bearing bodies (1621); and / or, The first bearing structure (161) includes two first bearing bodies (1611) spaced apart along the axial direction. The magnetofluid assembly (1) also includes at least one support sleeve (154), which is fitted onto the inner bushing (121). The two ends of the support sleeve (154) abut against the two first bearing bodies (1611) respectively.

6. The semiconductor reactor according to claim 1, characterized in that, The magnetofluid assembly (1) further includes a sleeve connecting flange (155), a transition flange (156), and a washer (157). The transition flange (156) is disposed on the upper end face of the outer bushing (122). The sleeve connecting flange (155) is connected between the transition flange (156) and the rotating cover (31). The washer (157) is disposed at the flange end of the sleeve connecting flange (155). Fasteners (158) are sequentially passed through the washer (157), the flange end, and the transition flange (156) to connect to the outer bushing (122).

7. The semiconductor reactor according to claim 1, characterized in that, The inner bushing (121) has a first water-cooling cavity (1212) inside, which has a first water inlet (1213) and a first water outlet (1214) communicating with an external water-cooling system to form a circulating cooling channel; and / or, The base bushing (123) has a second water-cooling cavity (1231) inside. The second water-cooling cavity (1231) has a second water inlet (1232) and a second water outlet (1233) that are connected to an external water-cooling system to form a circulating cooling channel.

8. The semiconductor reactor according to claim 7, characterized in that, The first water-cooling cavity (1212) extends from bottom to top along the axial direction of the inner bushing (121). A water-cooling groove is provided on the outer side of the inner bushing (121). A plurality of water-proof layers (1215) are provided in the water-cooling groove at intervals along the axial direction of the inner bushing (121). The water-proof layers (1215) extend circumferentially along the inner bushing (121). A water-cooling flow channel is formed between adjacent water-proof layers (1215), and two adjacent water-cooling flow channels are interconnected. The water-cooled tank is connected to the first water-cooled cavity (1212). The first magnetic fluid structure (13) includes a first magnetic pole ring (131). A sealed magnetic fluid channel is opened in the first magnetic pole ring (131). The magnetic fluid channel is filled with magnetic fluid. The first magnetic pole ring (131) is fitted onto the inner bushing (121) and closes the opening of the water-cooled tank. The water-cooled channel cools the first magnetic pole ring (131).

9. The semiconductor reactor according to claim 1, characterized in that, The electrode heating assembly (2) further includes a graphite electrode shaft (22), which passes through the communicating cavity (1211) and extends along the axial direction of the communicating cavity (1211). One end of the graphite electrode shaft (22) is electrically connected to an external power source, and the other end is connected to the electrode structure (21), which is located inside the rotating cover (31).

10. The semiconductor reactor according to claim 9, characterized in that, The electrode structure (21) includes a heating electrode disk (211) and a first heat insulation structure. The heating electrode disk (211) extends radially along the rotating cover (31) and is electrically connected to the graphite electrode shaft (22). The first heat insulation structure includes at least one layer of graphite plate (212) and / or a first graphite felt (213). The first heat insulation structure is disposed below the heating electrode disk (211); and / or, The graphite electrode shaft (22) extends from the communicating cavity (1211) into the reaction chamber. The electrode heating assembly (2) further includes a second heat insulation structure (23), which includes a quartz sleeve (231) and a second graphite felt (232) disposed within the quartz sleeve (231). The graphite electrode shaft (22) and the ejector mechanism (32) pass through the second graphite felt (232); and / or, The electrode heating assembly (2) further includes a first sealing flange (241), a second sealing flange (242), and a water-cooled electrode structure (25). The semiconductor reactor further includes a worktable. The bottom of the magnetofluid assembly (1) is detachably connected to the worktable. The first sealing flange (241) is sealed to the worktable. The second sealing flange (242) is sealed to the top of the inner bushing (121). One end of the water-cooled electrode structure (25) is located below the first sealing flange (241) and passes through the first sealing flange (241) to connect to the graphite electrode shaft (22). The end of the water-cooled electrode structure (25) away from the graphite electrode shaft (22) is electrically connected to an external power source. The graphite electrode shaft (22) passes through the second sealing flange (242). The ejector pin mechanism (32) passes through the first sealing flange (241) and the second sealing flange (242) in sequence.

11. The semiconductor reactor according to claim 1, characterized in that, The base assembly (3) further includes a lifting drive (331), and the ejector mechanism (32) includes a lifting shaft (321) and an ejector pin (322) disposed at the end of the lifting shaft (321). A tray is provided at one end of the rotating housing (31) away from the magnetofluid assembly (1), and the tray is used to carry the wafer. The end of the lifting shaft (321) away from the ejector pin (322) is connected to the lifting drive (331). The lifting drive (331) drives the lifting shaft (321) to move up and down along the axial direction of the communicating cavity (1211). The lifting shaft (321) can drive the ejector pin (322) to rise to lift the tray away from the rotating housing (31), or drive the ejector pin (322) to fall so that the tray is connected to the rotating housing (31).

12. The semiconductor reactor according to claim 11, characterized in that, The base assembly (3) further includes a guide mechanism (34), which includes a guide sleeve (341), a guide shaft (342), and a lifting plate (343). The guide shaft (342) is axially reciprocatingly connected to the guide sleeve (341). The guide shaft (342) and the lifting shaft (321) are parallel to each other. The end of the guide shaft (342) away from the guide sleeve (341) and the end of the lifting shaft (321) away from the ejector pin (322) are both connected to the lifting plate (343). The lifting plate (343) is connected to the output end of the lifting drive (331); and / or, The semiconductor reactor further includes a worktable, the bottom of the magnetofluid assembly (1) is detachably connected to the worktable, the base assembly (3) further includes a lifting flange (351) and a lifting bellows (352), one end of the lifting flange (351) is sealed to the worktable, the lifting bellows (352) is fitted outside the lifting shaft (321), one end is connected to the lifting flange (351), and the other end is connected to the output end of the lifting drive (331), the lifting shaft (321) passes through the lifting flange (351) to connect to the output end of the lifting drive (331); and / or, The lifting shaft (321) includes a quartz lifting shaft (3211) and a support lifting shaft (3212) that are interconnected and coaxially arranged. The quartz lifting shaft (3211) passes through the inner bushing (121), and one end of the quartz lifting shaft (3211) extends into the reaction chamber to connect to the ejector pin (322), while the other end is connected to the support lifting shaft (3212). The other end of the support lifting shaft (3212) away from the quartz lifting shaft (3211) is connected to the lifting drive (331).

13. A chemical vapor deposition apparatus, characterized in that, Includes the semiconductor reactor as described in any one of claims 1-12.

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