Active matrix substrate and liquid crystal display device having the same

Abstract

An active matrix substrate and a liquid crystal display device in which a pixel electrode is reliably electrically connected. A color filter (20) has a plurality of first trenches (Ga) corresponding to a plurality of subpixels arranged in a column direction, and an organic resin film (21a) has a plurality of second trenches (Gb) corresponding to the plurality of subpixels arranged in the column direction. In each subpixel, a thin film transistor (TFT) is electrically connected to a pixel electrode (24a) via a first relay electrode (19a) extending from a bottom of a contact hole (Ha) formed in a first inorganic insulating film (16, 18) to a bottom of a first trench (Ga), and a second relay electrode (22a) extending from the bottom of the first trench (Ga) to an edge portion on a side of a second trench (Gb) via one sidewall of the first trench (Ga) and one sidewall of the second trench (Gb). One protruding portion (T) protruding to one side of the one sidewall of the second trench (Gb) is provided on the other sidewall of the second trench (Gb) for each subpixel.

Description

Technical Field

[0001] The present invention relates to an active matrix substrate and a liquid crystal display device having the active matrix substrate. Background Technology

[0002] In recent years, liquid crystal display devices have often adopted a structure in which color filters are fabricated on an array substrate (also known as "COA") by placing color filters on an active matrix substrate (array substrate) so that they do not need to be aligned with an opposing substrate.

[0003] For example, Patent Document 1 discloses a liquid crystal display device, which includes an active element substrate, the active element substrate including: a color filter; a common electrode disposed on the color filter; a common wiring electrically connected to the common electrode; a reflection suppression film disposed on the common wiring and the color filter; and a pixel electrode that generates an electric field with the common electrode.

[0004] Existing technical documents Patent documents Patent Document 1: Japanese Patent Application Publication No. 2016-114779 Summary of the Invention The problem the invention aims to solve However, in active matrix substrates with a COA structure, considering the disordered alignment of the liquid crystal layer, it has been proposed that, for example, the electrical connection between the relay electrode and the pixel electrode, which are electrically connected to the thin film transistor (TFT), is not through contact holes formed in the stacked film of the color filter and the organic resin film, but through grooves formed in a stripe shape when viewed from above. However, in active matrix substrates where electrical connection is made through grooves formed in the aforementioned stacked film, the following problems exist: conductive film that serves as the relay electrode remains at the bottom of the groove, causing short circuits between adjacent relay electrodes; or, coated resin film that serves as the organic resin film remains, causing poor conductivity between the relay electrode and other relay electrodes in the underlying layer, thereby making the electrical connection to the pixel electrode unreliable.

[0005] The present invention was made in view of the above-mentioned problems, and its object is to reliably electrically connect pixel electrodes.

[0006] Solution for solving the problem To achieve the above objectives, the active matrix substrate of the present invention includes: a substrate; a plurality of thin-film transistors disposed on the substrate, corresponding to a plurality of sub-pixels arranged in a matrix; a color filter disposed on the plurality of thin-film transistors through a first inorganic insulating film, and having a coloring layer of a predetermined color disposed corresponding to each of the sub-pixels; an organic resin film disposed on the color filter; a plurality of pixel electrodes disposed on the organic resin film corresponding to the plurality of sub-pixels; and a common electrode disposed on each pixel electrode through a second inorganic insulating film. A plurality of first grooves are formed in the color filter, the plurality of first grooves being disposed corresponding to the plurality of sub-pixels arranged in the column direction and being formed to extend parallel to each other in the row direction. A coloring layer of a predetermined color is formed in the organic resin film. A plurality of second grooves are provided corresponding to a plurality of sub-pixels arranged in a column direction and formed to extend parallel to each other in a row direction. In each sub-pixel, the corresponding thin-film transistor is electrically connected to the corresponding pixel electrode via a first relay electrode and a second relay electrode. The first relay electrode is arranged such that it extends from the bottom of a contact hole formed in the first inorganic insulating film to the bottom of the corresponding first groove. The second relay electrode is arranged such that it extends from the bottom of the corresponding first groove, through a sidewall of the first groove and a sidewall of the corresponding second groove, to one edge of the corresponding second groove. A protrusion is provided in the other sidewall of the second groove for each sub-pixel, and the protrusion protrudes toward one side of the sidewall of the second groove.

[0007] Furthermore, the liquid crystal display device according to the present invention includes: the above-mentioned active matrix substrate and the opposing substrate disposed opposite to the active matrix substrate; and a liquid crystal layer disposed between the active matrix substrate and the opposing substrate.

[0008] Invention Effects According to the present invention, the pixel electrodes can be reliably electrically connected. Attached Figure Description

[0009] Figure 1 This is a top view of the active matrix substrate according to the first embodiment of the present invention.

[0010] Figure 2 It is along Figure 1 A cross-sectional view of the active matrix substrate of line II-II and the liquid crystal display device having the active matrix substrate.

[0011] Figure 3 This is a first cross-sectional view showing a part of the manufacturing method of an active matrix substrate according to the first embodiment of the present invention.

[0012] Figure 4 Is following Figure 3 A second cross-sectional view is shown below, representing a portion of the manufacturing method of the active matrix substrate according to the first embodiment of the present invention.

[0013] Figure 5 Is following Figure 4 A third cross-sectional view is shown below, representing a portion of the method for manufacturing an active matrix substrate according to the first embodiment of the present invention.

[0014] Figure 6 Is following Figure 5 A fourth cross-sectional view is shown next, representing a portion of the manufacturing method of the active matrix substrate according to the first embodiment of the present invention.

[0015] Figure 7 Is following Figure 6 A fifth cross-sectional view is shown below, representing a portion of the manufacturing method of the active matrix substrate according to the first embodiment of the present invention.

[0016] Figure 8 Is following Figure 7 A sixth cross-sectional view is shown next, representing a portion of the method for manufacturing an active matrix substrate according to the first embodiment of the present invention.

[0017] Figure 9 Is following Figure 8 A seventh cross-sectional view is shown next, representing a portion of the method for manufacturing an active matrix substrate according to the first embodiment of the present invention.

[0018] Figure 10 Is following Figure 9 The following is a partial cross-sectional view of a method for manufacturing an active matrix substrate according to the first embodiment of the present invention.

[0019] Figure 11 Is following Figure 10 The following is a 9th cross-sectional view showing a portion of the manufacturing method of the active matrix substrate according to the first embodiment of the present invention.

[0020] Figure 12 Is following Figure 11 A 10th cross-sectional view is shown next, representing a portion of the manufacturing method of the active matrix substrate according to the first embodiment of the present invention.

[0021] Figure 13 Is following Figure 12 Next, a 11th cross-sectional view is shown as a part of the manufacturing method of the active matrix substrate according to the first embodiment of the present invention.

[0022] Figure 14 Is following Figure 13A 12th cross-sectional view is shown next, representing a portion of the manufacturing method of the active matrix substrate according to the first embodiment of the present invention.

[0023] Figure 15 Is following Figure 14 The following is a 13th cross-sectional view showing a portion of the manufacturing method of the active matrix substrate according to the first embodiment of the present invention.

[0024] Figure 16 Is following Figure 15 A 14th cross-sectional view is shown next, representing a portion of the manufacturing method of the active matrix substrate according to the first embodiment of the present invention.

[0025] Figure 17 This is a top view of the active matrix substrate according to the second embodiment of the present invention.

[0026] Figure 18 It is along Figure 17 A cross-sectional view of the active matrix substrate of the XVIII-XVIII line.

[0027] Figure 19 This is a first cross-sectional view showing a part of the manufacturing method of an active matrix substrate according to a second embodiment of the present invention.

[0028] Figure 20 Is following Figure 19 A second cross-sectional view is shown below, representing a portion of the manufacturing method of the active matrix substrate according to the second embodiment of the present invention.

[0029] Figure 21 Is following Figure 20 A third cross-sectional view is shown below, representing a portion of the method for manufacturing an active matrix substrate according to the second embodiment of the present invention.

[0030] Figure 22 Is following Figure 21 A fourth cross-sectional view is shown next, representing a portion of the manufacturing method of the active matrix substrate according to the second embodiment of the present invention.

[0031] Figure 23 Is following Figure 22 A fifth cross-sectional view is shown next, representing a portion of the manufacturing method of the active matrix substrate according to the second embodiment of the present invention.

[0032] Figure 24 Is following Figure 23 A sixth cross-sectional view is shown next, representing a portion of the manufacturing method of the active matrix substrate according to the second embodiment of the present invention.

[0033] Figure 25 Is following Figure 24A seventh cross-sectional view is shown next, representing a portion of the method for manufacturing an active matrix substrate according to a second embodiment of the present invention.

[0034] Figure 26 Is following Figure 25 The following is a partial cross-sectional view of a method for manufacturing an active matrix substrate according to a second embodiment of the present invention.

[0035] Figure 27 Is following Figure 26 The following is a 9th cross-sectional view showing a portion of the manufacturing method of the active matrix substrate according to the second embodiment of the present invention.

[0036] Figure 28 Is following Figure 27 A 10th cross-sectional view is shown next, representing a portion of the manufacturing method of the active matrix substrate according to the second embodiment of the present invention.

[0037] Figure 29 Is following Figure 28 Next, a 11th cross-sectional view is shown as a part of the manufacturing method of the active matrix substrate according to the second embodiment of the present invention.

[0038] Figure 30 Is following Figure 29 A 12th cross-sectional view is shown next, representing a portion of the manufacturing method of the active matrix substrate according to the second embodiment of the present invention.

[0039] Figure 31 This is a top view of the active matrix substrate according to the third embodiment of the present invention. Detailed Implementation

[0040] Hereinafter, embodiments of the present invention will be described in detail with reference to the accompanying drawings. However, the present invention is not limited to the following embodiments.

[0041] First Implementation Method Figures 1 to 16 A first embodiment of the liquid crystal display device according to the present invention is shown. Here, Figure 1 This is a top view of the active matrix substrate 30a according to this embodiment. Additionally, Figure 2 It is along Figure 1 A cross-sectional view of the active matrix substrate 30a of the II-II line and the liquid crystal display device 50 including the active matrix substrate.

[0042] like Figure 2As shown, the liquid crystal display device 50 includes: an active matrix substrate 30a having a COA structure, a counter substrate 40 disposed opposite to the active matrix substrate 30a, and a liquid crystal layer 45 disposed between the active matrix substrate 30a and the counter substrate 40. Furthermore, in the display area of ​​the liquid crystal display device 50 where images are displayed, a plurality of sub-pixels P (see reference '...') are arranged in a matrix (row and column) configuration. Figure 1 Here, as Figure 1 As shown, the display area includes the following adjacent sub-pixels P: a sub-pixel P with a red layer 20r configured for displaying a red hue, a sub-pixel P with a green layer 20g configured for displaying a green hue, and a sub-pixel P with a blue layer 20b configured for displaying a blue hue. Furthermore, in the display area, as described above, a pixel is formed by three adjacent sub-pixels P used for displaying red, green, and blue hues. Additionally, in... Figure 1 In the active matrix substrate 30a, as described above, multiple sub-pixels P are arranged in a matrix shape, where the X direction in the figure is the row direction and the Y direction in the figure is the column direction.

[0043] like Figure 2 As shown, the active matrix substrate 30a includes: a substrate 10a such as a glass substrate; a plurality of TFTs 5 disposed on the substrate 10a corresponding to a plurality of sub-pixels P; a color filter 20 disposed on the plurality of TFTs 5 separated by a first interlayer insulating film 16 and a second interlayer insulating film 18; an organic resin film 21a disposed on the color filter 20; a plurality of pixel electrodes 24a disposed on the organic resin film 21a corresponding to a plurality of sub-pixels P; a common electrode 26a disposed on each of the pixel electrodes 24a separated by a third interlayer insulating film 25; and an alignment film 29 disposed on the common electrode 26a. Additionally, as... Figure 1 As shown, the active matrix substrate 30a is on the substrate 10a and includes, in the display area: a plurality of gate lines 15g, which correspond to a plurality of sub-pixels P arranged along the Y direction in the figure and extend parallel to each other along the X direction in the figure; and a plurality of source lines 17d, which pass through a first interlayer insulating film 16 (see reference 16). Figure 2 The way in which the gate lines 15g intersect corresponds to the arrangement of multiple sub-pixels P along the X direction in the figure, and extends parallel to each other along the Y direction in the figure.

[0044] like Figure 1 and Figure 2 As shown, TFT5 includes: a semiconductor layer 13a disposed on a substrate coating film 12; and a gate electrode (15g) disposed on the semiconductor layer 13a through a gate insulating film 14.

[0045] Semiconductor layer 13a is composed of a semiconductor film, such as an In-Ga-Zn-O system oxide semiconductor. Here, the In-Ga-Zn-O system semiconductor is a ternary oxide of In (indium), Ga (gallium), and Zn (zinc), and the ratio (composition ratio) of In, Ga, and Zn is not particularly limited. Furthermore, the In-Ga-Zn-O system semiconductor can be amorphous or crystalline. Moreover, as a crystalline In-Ga-Zn-O system semiconductor, a crystalline In-Ga-Zn-O system semiconductor oriented with its c-axis approximately perpendicular to the plane is preferred. Alternatively, other oxide semiconductors may be included instead of the In-Ga-Zn-O system semiconductor. For example, an In-Sn-Zn-O system semiconductor (e.g., In₂O₃-SnO₂-ZnO; InSnZnO) may also be included. Here, the In-Sn-Zn-O system semiconductor is a ternary oxide of In (indium), Sn (tin), and Zn (zinc). In addition, other oxide semiconductors may also include In-Al-Zn-O semiconductors, In-Al-Sn-Zn-O semiconductors, Zn-O semiconductors, In-Zn-O semiconductors, Zn-Ti-O semiconductors, Cd-Ge-O semiconductors, Cd-Pb-O semiconductors, CdO (cadmium oxide), Mg-Zn-O semiconductors, In-Ga-Sn-O semiconductors, In-Ga-O semiconductors, Zr-In-Zn-O semiconductors, Hf-In-Zn-O semiconductors, Al-Ga-Zn-O semiconductors, Ga-Zn-O semiconductors, In-Ga-Zn-Sn-O semiconductors, InGaO3(ZnO)5, and magnesium zinc oxide (MgO). x Zn 1-x O), zinc cadmium oxide (Cd) x Zn 1-x (O), etc. Furthermore, as a Zn-O semiconductor, amorphous, polycrystalline, microcrystalline, or unadulterated ZnO semiconductors containing one or more impurity elements from Group 1, Group 13, Group 14, Group 15, and Group 17 elements can be used. Additionally, the semiconductor layer 13a includes source and drain regions disposed separately from each other, and a channel region disposed between these source and drain regions. Here, the channel region is disposed overlapping the gate electrode (15g). Furthermore, as... Figure 1 As shown, the source region is electrically connected to the source line 17d via a second contact hole Hb formed in the gate insulating film 14 and the first interlayer insulating film 16. Additionally, as... Figure 1 and Figure 2As shown, the drain region is electrically connected to the pixel electrode 24a via the first relay electrode 19a and the second relay electrode 22a, described later. Further, as... Figure 1 and Figure 2 As shown, a light-shielding layer 11a is provided on the substrate 10a side of the semiconductor layer 13a. The light-shielding layer 11a is disposed on the substrate 10a and disposed in a manner separated by the substrate coating film 12.

[0046] like Figure 1 As shown, the gate electrode (15g) is formed by a portion of the gate line 15g. Here, the gate electrode (15g) is provided in a manner that overlaps with the channel region of the semiconductor layer 13a, as described above, to form a configuration for controlling the conduction between the source region and the drain region of the semiconductor layer 13a.

[0047] The base coating film 12, gate insulating film 14, first interlayer insulating film 16, second interlayer insulating film 18, and third interlayer insulating film 25 are, for example, single-layer or multilayer films of inorganic insulating films such as silicon nitride, silicon oxide, and silicon oxynitride. Here, the first interlayer insulating film 16 and the second interlayer insulating film 18 are provided as first inorganic insulating films. Furthermore, the third interlayer insulating film 25 is provided as a second inorganic insulating film. The semiconductor layer 13a side of the base coating film 12 and the gate insulating film 14 is composed of a silicon oxide film.

[0048] The color filter 20 is configured such that each sub-pixel P has a color layer of a predetermined color. Specifically, as shown... Figure 1 As shown, the color filter 20 includes: a red layer 20r disposed as a coloring layer for a sub-pixel P used for displaying red tones; a green layer 20g disposed as a coloring layer for a sub-pixel P used for displaying green tones; and a blue layer 20b disposed as a coloring layer for a sub-pixel P used for displaying blue tones. Here, the red layer 20r, green layer 20g, and blue layer 20b are made of a transparent organic resin material, such as acrylic resin dyed in a predetermined color. Furthermore, as... Figure 1 and Figure 2 As shown, in the color filter 20, corresponding to along Figure 1 Multiple sub-pixels P arranged in the Y direction form multiple first grooves Ga, and the multiple first grooves Ga are along... Figure 1 The X-directions in the figures extend parallel to each other. Here, as... Figure 1 and Figure 2 As shown, each first trench Ga is arranged to overlap with each gate line 15g.

[0049] The organic resin film 21a is made of a transparent organic resin material, such as acrylic resin. Additionally, such as... Figure 1 and Figure 2 As shown, in the organic resin film 21a, corresponding to along Figure 1Multiple sub-pixels P arranged in the Y direction form multiple second grooves Gb, and the multiple second grooves Gb are along Figure 1 The X-directions in the figures extend parallel to each other. Here, as... Figure 1 and Figure 2 As shown, each second trench Gb is arranged to overlap with each gate line 15g. Additionally, as... Figure 1 and Figure 2 As shown, in each sub-pixel P, the drain region of the semiconductor layer 13a constituting the TFT5 is electrically connected to the pixel electrode 24a via a first relay electrode 19a and a second relay electrode 22a. The first relay electrode 19a is configured to extend from the bottom of the first contact hole Ha formed in the gate insulating film 14 and the first interlayer insulating film 16 to the bottom of the first trench Ga. The second relay electrode 22a is configured to extend from the bottom of the first trench Ga via one side of the first trench Ga. Figure 1 The sidewall of the negative Y-direction and one side of the second groove Gb (in the middle) Figure 1 The sidewall of the Y-direction negative side reaches one side of the second groove Gb (in the negative Y direction). Figure 1 The edge of the negative Y-direction (in the middle). Here, as... Figure 1 and Figure 2 As shown, in the other (of the second groove Gb) Figure 1 The sidewall on the positive side of the Y direction is provided with a protrusion T, and the protrusion T is directed toward one of the second grooves Gb. Figure 1 One side of the sidewall (on the negative Y-direction) protrudes, and each sub-pixel P has a protrusion T. Furthermore, the protrusion T is as follows: Figure 1 As shown, between an adjacent pair of source lines 17d, a wide rectangular convex shape is arranged when viewed from above.

[0050] like Figure 1 and Figure 2 As shown, in each sub-pixel P, the pixel electrode 24a is disposed in a rectangular shape on the upper part of the organic resin film 21a, the second relay electrode 22a, and the resin filling layer 23 formed inside the first groove Ga and the second groove Gb. Furthermore, the pixel electrode 24a, together with the common electrode 26a and the third interlayer insulating film 25 disposed between the pixel electrode 24a and the common electrode 26a, constitutes the auxiliary capacitor of each sub-pixel P.

[0051] The common electrode 26a is provided for multiple sub-pixels P. In addition, the common electrode 26a has a strip-shaped slit (not shown) for aligning the liquid crystal layer 45.

[0052] The alignment film 29 and the alignment film 31 described later are made of, for example, a polyimide resin whose surface has been rubbed.

[0053] like Figure 2As shown, the opposing substrate 40 includes a base substrate 10b such as a glass substrate and an alignment film 31 disposed on the base substrate 10b.

[0054] The liquid crystal layer 45 is made of, for example, a nematic liquid crystal material with electro-optic properties. Here, the liquid crystal layer 45 is sealed between the active matrix substrate 30a and the opposing substrate 40 by bonding a frame-shaped sealing material, which has a border area around the display area, between the active matrix substrate 30a and the opposing substrate 40.

[0055] The liquid crystal display device 50 with the above structure applies a predetermined voltage to the liquid crystal layer 45 between each pixel electrode 24a and the common electrode 26a and the auxiliary capacitor, and uses the electric field generated along the substrate surface direction, i.e., laterally, to change the orientation state of the liquid crystal layer 45, thereby adjusting the transmittance of light transmitted through each sub-pixel P in the display panel to display an image.

[0056] Next, focusing on the manufacturing method of the active matrix substrate 30a, the manufacturing method of the liquid crystal display device 50 of this embodiment will be described. Here, Figures 3 to 16 These are 1 to 14 cross-sectional views, which are part of a method for manufacturing a continuous display active matrix substrate 30a.

[0057] First, on a substrate 10a such as a glass substrate, a metal film such as a titanium film (approximately 50 nm thick) is formed, for example, by sputtering. Then, the metal film is patterned, such as... Figure 3 As shown, a light-shielding layer 11a is formed.

[0058] Next, on the substrate surface where the light-shielding layer 11a has been formed, a silicon oxide film (approximately 100 nm thick) is formed, for example, by plasma CVD (chemical vapor deposition), thereby achieving the desired effect. Figure 4 As shown, a base coating film 12 is formed.

[0059] Subsequently, on the surface of the substrate on which the base coating 12 is formed, a semiconductor film composed of oxide semiconductor is formed, for example by sputtering InGaZnO4 (approximately 30 nm thick). Then, the semiconductor film is patterned, such as... Figure 5 As shown, a semiconductor layer 13a is formed.

[0060] Furthermore, after an inorganic insulating film, such as a silicon oxide film (approximately 100 nm thick), is formed on the surface of a substrate on which the semiconductor layer 13a is formed, for example by plasma CVD, the inorganic insulating film is patterned, thereby achieving the desired effect. Figure 6 As shown, a first contact hole Ha and a second contact hole Hb are formed (refer to...). Figure 1 ) gate insulating film 14.

[0061] Next, on the substrate surface where the gate insulating film 14 is formed, a metal stack film is formed by sequentially depositing a titanium film (approximately 50 nm thick), an aluminum film (approximately 300 nm thick), and another titanium film (approximately 50 nm thick) using a sputtering method, for example. This metal stack film is then patterned to form a gate line (gate electrode) 15g (see reference). Figure 7 )wait.

[0062] Subsequently, on the surface of a substrate where gate lines 15g and the like have been formed, an inorganic insulating multilayer film is formed by sequentially depositing a silicon oxide film (approximately 300 nm thick) and a silicon nitride film (approximately 150 nm thick), for example, using plasma CVD. This inorganic insulating multilayer film is then patterned, thereby achieving the desired effect. Figure 7 As shown, a first contact hole Ha and a second contact hole Hb are formed (refer to...). Figure 1 The first interlayer insulating film 16.

[0063] Furthermore, on the substrate surface where the first interlayer insulating film 16 has been formed, a metal stack film is formed by sequentially forming a titanium film (thickness of about 50 nm), an aluminum film (thickness of about 300 nm), and another titanium film (thickness of about 50 nm) by sputtering, and then the metal stack film is patterned to form source lines 17d, etc.

[0064] Next, on the substrate surface where source lines 17d are formed, for example by plasma CVD, a silicon oxide film (approximately 300 nm thick) and a silicon nitride film (approximately 150 nm thick) are sequentially formed to create an inorganic insulating multilayer film. This inorganic insulating multilayer film is then patterned, thereby achieving the desired effect. Figure 8 As shown, a second interlayer insulating film 18 with a first contact hole Ha is formed.

[0065] Subsequently, on the surface of the substrate on which the second interlayer insulating film 18 has been formed, a transparent conductive film, such as an indium tin oxide (ITO) film (approximately 100 nm thick), is formed by sputtering. This transparent conductive film is then patterned, thereby achieving the desired effect. Figure 9 As shown, the first relay electrode 19a is formed.

[0066] Furthermore, on the substrate surface where the first relay electrode 19a, etc., is formed, an acrylic photosensitive resin dyed red, green, or blue is coated, for example, by spin coating or slot coating. After partial exposure of the coated photosensitive resin, patterning is performed by development, thereby forming a coloring layer of the selected color (e.g., red layer 20r) to a thickness of approximately 1.5 μm. Then, the same process is repeated for the other two colors to form coloring layers of the other two colors (e.g., green layer 20g and blue layer 20b), thereby achieving the desired effect. Figure 10As shown, a color filter 20 with a first groove Ga is formed.

[0067] Next, an acrylic photosensitive resin is coated onto the surface of the substrate on which the color filter 20 is formed, for example by spin coating or slit coating (after coating). The coated photosensitive resin is then partially exposed, and patterned by development, thereby achieving the desired effect. Figure 11 As shown, an organic resin film 21a with a second groove Gb having a protrusion T is formed to a thickness of about 2.0 μm.

[0068] Subsequently, on the surface of the substrate on which the organic resin film 21a has been formed, a transparent conductive film, such as an ITO film (approximately 100 nm thick), is formed, for example, by sputtering. This transparent conductive film is then patterned, thereby achieving the desired effect. Figure 12 As shown, a second relay electrode 22a is formed. Here, during the formation of the second relay electrode 22a, even if a residue 22r that will become a transparent conductive film for the second relay electrode 22a is temporarily formed at the bottom of the first trench Ga (see reference...), Figure 1 ), because the protrusion T of the organic resin film 21a is configured in Figure 1 Between adjacent residues 22r in the X direction, therefore Figure 1 There will be no short circuit between adjacent second relay electrodes 22a in the X direction via residue 22r.

[0069] Furthermore, on the surface of the substrate where the second relay electrode 22a is formed, an acrylic photosensitive resin (approximately 2.5 μm thick) is coated, for example, by spin coating or slot coating. After partial exposure of the coated photosensitive resin, patterning is performed by development, thereby achieving the desired effect. Figure 13 As shown, a resin filler layer 23 is formed.

[0070] Next, after forming a transparent conductive film, such as an ITO film (approximately 100 nm thick), on the surface of the substrate where the resin filling layer 23 is formed, by means of sputtering, the transparent conductive film is patterned, thereby achieving the desired effect. Figure 14 As shown, pixel electrodes 24a and the like are formed.

[0071] Subsequently, on the surface of the substrate on which the pixel electrode 24a is formed, an inorganic insulating film, such as a silicon nitride film (approximately 100 nm thick), is formed, for example, by plasma CVD. This inorganic insulating film is then patterned, thereby achieving the desired effect. Figure 15 As shown, a third interlayer insulating film 25 is formed.

[0072] Furthermore, after forming a transparent conductive film, such as an ITO film (approximately 100 nm thick), on the substrate surface following the formation of the third interlayer insulating film 25, the transparent conductive film is patterned, thereby achieving the desired effect. Figure 16As shown, a common electrode 26a is formed.

[0073] Finally, on the substrate on which the common electrode 26a is formed, a polyimide resin film is coated, for example by printing, and the resin film is baked and rubbed to form an alignment film 29.

[0074] The active matrix substrate 30a can be manufactured using the above methods.

[0075] Furthermore, the active matrix substrate 30a manufactured in the above manner is bonded to the opposing substrate 40 via a frame-shaped sealing material, and liquid crystal material is sealed between the active matrix substrate 30a and the opposing substrate 40 to form a liquid crystal layer 45, thereby manufacturing a liquid crystal display device 50.

[0076] As described above, in the active matrix substrate 30a and the liquid crystal display device 50 including the active matrix substrate according to this embodiment, since each sub-pixel P is provided with a protrusion T protruding to one side of one sidewall of the second groove Gb formed in the organic resin film 21a, even if a residue 22r that becomes a transparent conductive film for the second relay electrode 22a is temporarily formed on the other sidewall of the bottom of the first groove Ga when the second relay electrode 22a is formed, the protrusion T of the organic resin film 21a will be disposed between adjacent residues 22r. Therefore, a short circuit will not occur between adjacent second relay electrodes 22a via the residue 22r, thereby enabling reliable electrical connection of the TFT 5 to the pixel electrode 24a.

[0077] Second Implementation Method Figures 17 to 30 A second embodiment of the liquid crystal display device according to the present invention is shown. Here, Figure 17 This is a top view of the active matrix substrate 30b of this embodiment, which corresponds to the first embodiment described above. Figure 1 .in addition, Figure 18 It is along Figure 17 A cross-sectional view of the active matrix substrate 30b with XVIII-XVIII lines. Furthermore, in the following embodiments, [the following is a description of the active matrix substrate 30b with XVIII-XVIII lines]. Figures 1 to 16 Identical parts are labeled with the same reference numerals, and their detailed descriptions are omitted.

[0078] The liquid crystal display device of this embodiment includes: an active matrix substrate 30b having a COA structure, a counter substrate 40 disposed opposite to the active matrix substrate 30b, and a liquid crystal layer 45 disposed between the active matrix substrate 30b and the counter substrate 40. Furthermore, in the display area for image display in the liquid crystal display device of this embodiment, similar to the liquid crystal display device 50 of the first embodiment described above, a plurality of sub-pixels P (refer to...) are arranged in a matrix (row and column) configuration. Figure 17 Here, in the display area, similarly to the liquid crystal display device 50 of the first embodiment described above, as... Figure 17 As shown, there are sub-pixels P: one configured with a red layer 20r for displaying a red hue, one configured with a green layer 20g for displaying a green hue, and one configured with a blue layer 20b for displaying a blue hue, all of which are adjacent to each other. Furthermore, in... Figure 17 In the active matrix substrate 30b, as described above, multiple sub-pixels P are arranged in a matrix (row and column) configuration, where the X direction in the figure is the row direction and the Y direction in the figure is the column direction.

[0079] like Figure 18 As shown, the active matrix substrate 30b includes: a substrate 10a such as a glass substrate; a plurality of TFTs 5 disposed on the substrate 10a corresponding to a plurality of sub-pixels P; a color filter 20 disposed on the plurality of TFTs 5 separated by a first interlayer insulating film 16 and a second interlayer insulating film 18; an organic resin film 21b disposed on the color filter 20; a plurality of pixel electrodes 24a disposed on the organic resin film 21b corresponding to a plurality of sub-pixels P; a common electrode 26a disposed on each of the pixel electrodes 24a separated by a third interlayer insulating film 25; and an alignment film 29 disposed on the common electrode 26a. Furthermore, the active matrix substrate 30b is similar to the active matrix substrate 30a of the first embodiment described above, as follows: Figure 17 As shown, on the substrate 10a, in the display area, there are: a plurality of gate lines 15g, which correspond to a plurality of sub-pixels arranged along the Y direction in the figure and extend parallel to each other along the X direction in the figure; and a plurality of source lines 17d, which pass through a first interlayer insulating film 16 (see reference 16). Figure 18 The way in which the gate lines 15g intersect corresponds to the arrangement of multiple sub-pixels P along the X direction in the figure, and extends parallel to each other along the Y direction in the figure.

[0080] The organic resin film 21b is made of a transparent organic resin material, such as acrylic resin. Furthermore, in the organic resin film 21b, such as... Figure 17 and Figure 18 As shown, corresponding to along Figure 17 Multiple sub-pixels P arranged in the Y direction form multiple second grooves Gb, and the multiple second grooves Gb are in Figure 17 They extend parallel to each other in the X direction. Here, as... Figure 17 and Figure 18 As shown, each second trench Gb is arranged to overlap with each gate line 15g. Additionally, as... Figure 17As shown, in each sub-pixel P, the drain region of the semiconductor layer 13a constituting the TFT5 is electrically connected to the pixel electrode 24a via a first relay electrode 19a and a second relay electrode 22a. The first relay electrode 19a is configured to extend from the bottom of the first contact hole Ha formed in the gate insulating film 14 and the first interlayer insulating film 16 to the bottom of the first channel Ga. The second relay electrode 22a is configured to extend from the bottom of the first channel Ga via the sidewall of one side of the first channel Ga (the negative side in the Y direction in the figure) and the sidewall of one side of the second channel Gb (the negative side in the Y direction in the figure) to the edge of one side of the second channel Gb (the negative side in the Y direction in the figure). Here, as Figure 17 and Figure 18 As shown, in the other (of the second groove Gb) Figure 17 The sidewall on the positive side of the Y direction is provided with a protrusion T, and the protrusion T is directed toward one of the second grooves Gb. Figure 17 One side of the sidewall (on the negative Y-direction) protrudes, and each sub-pixel P has a protrusion T. Furthermore, as... Figure 17 As shown, the protrusion T is arranged in a narrow rectangular convex shape when viewed from above, so as to overlap with each source line 17d.

[0081] like Figure 17 and Figure 18 As shown, the pixel electrode 24a is disposed in a rectangular shape on the organic resin film 21b and the resin filling layer 23 formed inside the first groove Ga and the second groove Gb in each sub-pixel P.

[0082] The liquid crystal display device of this embodiment, similar to the liquid crystal display device 50 of the first embodiment described above, applies a predetermined voltage to the liquid crystal layer 45 between each pixel electrode 24a and the common electrode 26a and the auxiliary capacitor, and uses an electric field generated along the substrate surface direction, i.e., laterally, to change the orientation state of the liquid crystal layer 45, thereby adjusting the transmittance of light transmitted through each sub-pixel P in the display panel to display an image.

[0083] Next, focusing on the manufacturing method of the active matrix substrate 30b, the manufacturing method of the liquid crystal display device of this embodiment will be described. Here, Figures 19 to 30 These are 1st to 12th cross-sectional views, which are part of a method for manufacturing a continuous display active matrix substrate 30b.

[0084] First, on a substrate 10a such as a glass substrate, a metal film such as a titanium film (approximately 50 nm thick) is formed by sputtering, for example, by patterning the metal film to form a light-shielding layer 11a (see reference). Figure 19 )wait.

[0085] Next, on the substrate surface where the light-shielding layer 11a is formed, for example by plasma CVD (chemical vapor deposition), a silicon oxide film (approximately 100 nm thick) is formed, thereby forming a substrate coating film 12 (see reference). Figure 19 ).

[0086] Subsequently, on the surface of the substrate on which the base coating 12 is formed, a semiconductor film composed of oxide semiconductor is formed, for example by sputtering InGaZnO4 (approximately 30 nm thick). Then, the semiconductor film is patterned, such as... Figure 19 As shown, a semiconductor layer 13a is formed.

[0087] Furthermore, after an inorganic insulating film, such as a silicon oxide film (approximately 100 nm thick), is formed on the surface of a substrate on which the semiconductor layer 13a is formed, for example by plasma CVD, the inorganic insulating film is patterned, thereby achieving the desired effect. Figure 20 As shown, a gate insulating film 14 is formed.

[0088] Next, on the surface of the substrate on which the gate insulating film 14 is formed, a metal stack film is formed by sequentially depositing a titanium film (approximately 50 nm thick), an aluminum film (approximately 300 nm thick), and another titanium film (approximately 50 nm thick) using, for example, by sputtering. This metal stack film is then patterned to achieve the desired effect. Figure 21 As shown, 15g of gate line (gate electrode) is formed.

[0089] Subsequently, on the surface of a substrate where gate lines 15g and the like have been formed, an inorganic insulating multilayer film is formed by sequentially depositing a silicon oxide film (approximately 300 nm thick) and a silicon nitride film (approximately 150 nm thick), for example, using plasma CVD. This inorganic insulating multilayer film is then patterned, thereby achieving the desired effect. Figure 22 As shown, a first contact hole Ha is formed (refer to...) Figure 17 The first interlayer insulating film 16 (and gate insulating film 14) of the second contact hole Hb.

[0090] Furthermore, on the substrate surface where the first interlayer insulating film 16 has been formed, after sequentially forming a titanium film (approximately 50 nm thick), an aluminum film (approximately 300 nm thick), and another titanium film (approximately 50 nm thick) by sputtering to form a metal stack film, the metal stack film is patterned, thereby achieving the desired effect. Figure 23 As shown, source lines 17d, etc. are formed.

[0091] Next, on the substrate surface where source lines 17d are formed, for example by plasma CVD, a silicon oxide film (approximately 300 nm thick) and a silicon nitride film (approximately 150 nm thick) are sequentially formed to create an inorganic insulating multilayer film. This inorganic insulating multilayer film is then patterned, thereby achieving the desired effect. Figure 24As shown, a first contact hole Ha is formed (refer to...) Figure 17 The second interlayer insulating film 18.

[0092] Subsequently, on the substrate surface where the second interlayer insulating film 18 has been formed, a transparent conductive film, such as an indium tin oxide (ITO) film (approximately 100 nm thick), is formed by sputtering. This transparent conductive film is then patterned to form the first relay electrode 19a (see reference 18). Figure 17 )wait.

[0093] Furthermore, on the substrate surface where the first relay electrode 19a, etc., is formed, an acrylic photosensitive resin dyed red, green, or blue is coated, for example, by spin coating or slot coating. After partial exposure of the coated photosensitive resin, patterning is performed by development, thereby forming a coloring layer of the selected color (e.g., red layer 20r) to a thickness of approximately 1.5 μm. Then, the same process is repeated for the other two colors to form coloring layers of the other two colors (e.g., green layer 20g and blue layer 20b), thereby achieving the desired effect. Figure 25 As shown, a color filter 20 with a first groove Ga is formed.

[0094] Next, an acrylic photosensitive resin is coated onto the surface of the substrate on which the color filter 20 is formed, for example by spin coating or slit coating. After partial exposure of the coated photosensitive resin, patterning is performed by development, thereby achieving the desired effect. Figure 26 As shown, an organic resin film 21b with a second groove Gb having a protrusion T is formed to a thickness of about 2.0 μm.

[0095] Subsequently, on the substrate surface where the organic resin film 21b has been formed, a transparent conductive film, such as an ITO film (approximately 100 nm thick), is formed, for example, by sputtering. This transparent conductive film is then patterned to form the second relay electrode 22a (see reference). Figure 17 ), etc. Here, when forming the second relay electrode 22a, even if a residue 22r that will become the second relay electrode 22a is temporarily formed at the bottom of the first trench Ga (see reference), Figure 17 ), because the protrusion T of the organic resin film 21b is configured in Figure 17 Between adjacent residues 22r in the X direction, therefore Figure 17 There will be no short circuit between adjacent second relay electrodes 22a in the X direction via residue 22r.

[0096] Furthermore, on the surface of the substrate where the second relay electrode 22a is formed, an acrylic photosensitive resin (approximately 2.5 μm thick) is coated, for example, by spin coating or slot coating. After partial exposure of the coated photosensitive resin, patterning is performed by development, thereby achieving the desired effect. Figure 27 As shown, a resin filler layer 23 is formed.

[0097] Next, after forming a transparent conductive film, such as an ITO film (approximately 100 nm thick), on the surface of the substrate where the resin filling layer 23 is formed, by means of sputtering, the transparent conductive film is patterned, thereby achieving the desired effect. Figure 28 As shown, pixel electrodes 24a and the like are formed.

[0098] Subsequently, on the surface of the substrate on which the pixel electrode 24a is formed, an inorganic insulating film, such as a silicon nitride film (approximately 100 nm thick), is formed, for example, by plasma CVD. This inorganic insulating film is then patterned, thereby achieving the desired effect. Figure 29 As shown, a third interlayer insulating film 25 is formed.

[0099] Furthermore, after forming a transparent conductive film, such as an ITO film (approximately 100 nm thick), on the substrate surface following the formation of the third interlayer insulating film 25, the transparent conductive film is patterned, thereby achieving the desired effect. Figure 30 As shown, a common electrode 26a is formed.

[0100] Finally, on the substrate on which the common electrode 26a is formed, a polyimide resin film is coated, for example by printing, and the resin film is baked and rubbed to form an alignment film 29.

[0101] The active matrix substrate 30b can be manufactured using the above methods.

[0102] Furthermore, the active matrix substrate 30b manufactured in the above manner is bonded to the opposing substrate 40 via a frame-shaped sealing material, and liquid crystal material is sealed between the active matrix substrate 30a and the opposing substrate 40 to form a liquid crystal layer 45, thereby enabling the manufacture of the liquid crystal display device of this embodiment.

[0103] As described above, in the active matrix substrate 30b and the liquid crystal display device including the active matrix substrate according to this embodiment, since each sub-pixel P is provided with a protrusion T protruding to one side of one sidewall of the second groove Gb formed in the organic resin film 21b, even if a residue 22r that becomes a transparent conductive film for the second relay electrode 22a is temporarily formed on the other sidewall of the bottom of the first groove Ga when the second relay electrode 22a is formed, the protrusion T of the organic resin film 21b will be disposed between adjacent residues 22r. Therefore, a short circuit will not occur between adjacent second relay electrodes 22a via the residue 22r, thereby enabling reliable electrical connection of the TFT5 to the pixel electrode 24a.

[0104] Third Implementation Method Figure 31 A third embodiment of the liquid crystal display device according to the present invention is shown. Here, Figure 31 This is a top view of the active matrix substrate 30c of this embodiment, which corresponds to the first embodiment described above. Figure 1 .

[0105] The liquid crystal display device of this embodiment includes: an active matrix substrate 30c having a COA structure, a counter substrate 40 disposed opposite to the active matrix substrate 30c, and a liquid crystal layer 45 disposed between the active matrix substrate 30c and the counter substrate 40. Furthermore, in the display area for displaying images in the liquid crystal display device of this embodiment, similar to the liquid crystal display device 50 of the first embodiment described above, a plurality of sub-pixels P (refer to...) are arranged in a matrix (row and column) configuration. Figure 31 Here, in the display area, similarly to the liquid crystal display device 50 of the first embodiment described above, as... Figure 31 As shown, there are sub-pixels P: one configured with a red layer 20r for displaying a red hue, one configured with a green layer 20g for displaying a green hue, and one configured with a blue layer 20b for displaying a blue hue, all of which are adjacent to each other. Furthermore, in... Figure 31 In the active matrix substrate 30c, as described above, multiple sub-pixels P are arranged in a matrix shape, where the X direction in the figure is the row direction and the Y direction in the figure is the column direction.

[0106] The active matrix substrate 30c includes: a substrate 10a such as a glass substrate; a plurality of TFTs 5 disposed on the substrate 10a corresponding to a plurality of sub-pixels P; a color filter 20 disposed on the plurality of TFTs 5 separated by a first interlayer insulating film 16 and a second interlayer insulating film 18; an organic resin film 21c disposed on the color filter 20; a plurality of pixel electrodes 24a disposed on the organic resin film 21c corresponding to a plurality of sub-pixels P; a common electrode 26a disposed on each of the pixel electrodes 24a separated by a third interlayer insulating film 25; and an alignment film 29 disposed on the common electrode 26a. Furthermore, the active matrix substrate 30c is similar to the active matrix substrate 30a of the first embodiment described above, as follows: Figure 17 As shown, on the substrate 10a, in the display area, there are: a plurality of gate lines 15g, which correspond to a plurality of sub-pixels P arranged along the Y direction in the figure and extend parallel to each other along the X direction in the figure; and a plurality of source lines 17d, which pass through a first interlayer insulating film 16 (see reference 16). Figure 18 The way in which the gate lines 15g intersect is configured to correspond to the multiple sub-pixels P arranged along the X direction in the figure, and they extend parallel to each other along the Y direction in the figure.

[0107] The organic resin film 21c is made of a transparent organic resin material, such as acrylic resin. Additionally, such as... Figure 31 As shown, in the organic resin film 21c, a plurality of second grooves Gb are formed corresponding to a plurality of sub-pixels P arranged along the Y direction in the figure, and the plurality of second grooves Gb extend parallel to each other along the X direction in the figure. Here, as Figure 31 As shown, each second trench Gb is arranged to overlap with each gate line 15g. Additionally, as... Figure 31 As shown, in each sub-pixel P, the drain region of the semiconductor layer 13a constituting the TFT5 is electrically connected to the pixel electrode 24a via a first relay electrode 19a and a second relay electrode 22a. The first relay electrode 19a is configured to extend from the bottom of the first contact hole Ha formed in the gate insulating film 14 and the first interlayer insulating film 16 to the bottom of the first channel Ga. The second relay electrode 22a is configured to extend from the bottom of the first channel Ga via the sidewall of one side of the first channel Ga (the negative side in the Y direction in the figure) and the sidewall of one side of the second channel Gb (the negative side in the Y direction in the figure) to the edge of one side of the second channel Gb (the negative side in the Y direction in the figure). Here, as Figure 31 As shown, a protrusion T is provided on the other sidewall of the second groove Gb (the positive side in the Y direction in the figure). The protrusion T protrudes to one side of the sidewall of the second groove Gb (the negative side in the Y direction in the figure), and each sub-pixel P has one protrusion T. Furthermore, as... Figure 31 As shown, the protrusion T is set in a narrow, inverted V-shaped shape at the front end, overlapping with each source line 17d, when viewed from above.

[0108] like Figure 31 As shown, the pixel electrode 24a is disposed in a rectangular shape on the organic resin film 21c and the resin filling layer 23 formed inside the first groove Ga and the second groove Gb in each sub-pixel P.

[0109] The liquid crystal display device of this embodiment, similar to the liquid crystal display device 50 of the first embodiment described above, applies a predetermined voltage to the liquid crystal layer 45 between each pixel electrode 24a and the common electrode 26a and the auxiliary capacitor, and uses an electric field generated along the substrate surface direction, i.e., laterally, to change the orientation state of the liquid crystal layer 45, thereby adjusting the transmittance of light transmitted through each sub-pixel P in the display panel to display an image.

[0110] The active matrix substrate 30c of this embodiment can be manufactured by changing the shape of the front end side of the protrusion T of the second groove Gb formed in the organic resin film 21c in the manufacturing method of the active matrix substrate 30b of the second embodiment described above.

[0111] As described above, in the active matrix substrate 30c and the liquid crystal display device including the active matrix substrate according to this embodiment, since each sub-pixel P is provided with a protrusion T protruding to one side of one sidewall of the second groove Gb formed in the organic resin film 21c, even if a residue 22r that becomes a transparent conductive film for the second relay electrode 22a is temporarily formed on the other sidewall of the bottom of the first groove Ga when the second relay electrode 22a is formed, the protrusion T of the organic resin film 21c will be disposed between adjacent residues 22r. Therefore, a short circuit will not occur between adjacent second relay electrodes 22a via the residues 22r, thereby enabling reliable electrical connection of the TFT5 to the pixel electrode 24a.

[0112] Other Implementation Methods In the above embodiments, an example is a liquid crystal display device including an active matrix substrate having a TFT having a semiconductor layer composed of an oxide semiconductor film. However, the present invention can also be applied to, for example, a liquid crystal display device including an active matrix substrate having a TFT having a semiconductor layer composed of a polycrystalline silicon film or an amorphous silicon film such as LTPS (low-temperature polycrystalline silicon).

[0113] Furthermore, in the above embodiments, a liquid crystal display device including an active matrix substrate is illustrated, wherein the electrode of the TFT connected to the pixel electrode in the active matrix substrate is the drain electrode. However, the present invention can also be applied to a liquid crystal display device including an active matrix substrate, wherein the electrode of the TFT connected to the pixel electrode in the active matrix substrate is the source electrode.

[0114] Practicality in industry As described above, the present invention is useful for liquid crystal display devices including active matrix substrates having a structure (COA) with color filters fabricated on an array substrate and a lateral electric field driving method.

[0115] Explanation of reference numerals in the attached figures Ga First Groove Gb Second groove Ha First contact hole P sub-pixel T-shaped protrusion 5. TFT (Thin Film Transistor) 10a base substrate 15g gate line 16 First interlayer insulating film (first inorganic insulating film) 17d source line 18 Second interlayer insulating film (first inorganic insulating film) 19a First relay electrode 20b Blue layer (coloring layer) 20g Green layer (coloring layer) 20r Red layer (coloring layer) 20 color filters 21a, 21b, 21c Organic resin films 22a Second relay electrode 24a pixel electrode 25. Third interlayer insulating film (second inorganic insulating film) 26a Common electrode 30a, 30b, 30c Active matrix substrates 40 Opposite substrates 45 Liquid Crystal Layer 50. Liquid crystal display device.

Claims

1. An active matrix substrate, characterized in that, include: Substrate; Multiple thin-film transistors are disposed on the substrate in a matrix arrangement corresponding to multiple sub-pixels; A color filter is disposed on the plurality of thin-film transistors through a first inorganic insulating film, and a coloring layer of a specified color is disposed corresponding to each sub-pixel; An organic resin film is disposed on the color filter; Multiple pixel electrodes, corresponding to the multiple sub-pixels, are disposed on the organic resin film; and A common electrode is disposed on each pixel electrode, separated by a second inorganic insulating film. The color filter has a plurality of first grooves formed therein, which are corresponding to a plurality of sub-pixels arranged in the column direction and are formed to extend parallel to each other in the row direction. A plurality of second grooves are formed in the organic resin film, the plurality of second grooves being disposed corresponding to a plurality of sub-pixels arranged in the column direction, and being formed to extend parallel to each other in the row direction. In each sub-pixel, the corresponding thin-film transistor is electrically connected to the corresponding pixel electrode via a first relay electrode and a second relay electrode. The first relay electrode is arranged such that it extends from the bottom of a contact hole formed in the first inorganic insulating film to the bottom of the corresponding first groove. The second relay electrode is arranged such that it extends from the bottom of the corresponding first groove, through a sidewall of the first groove and a sidewall of the corresponding second groove, to one edge of the corresponding second groove. In the other sidewall of the second groove, a protrusion is provided for each of the sub-pixels, the protrusion protruding toward one side of one sidewall of the second groove.

2. The active matrix substrate according to claim 1, characterized in that, It also includes multiple source lines, which are configured to extend parallel to each other in the column direction, corresponding to multiple sub-pixels arranged in the row direction. The protrusion is disposed between an adjacent pair of source lines among the plurality of source lines.

3. The active matrix substrate according to claim 1, characterized in that, It also includes multiple source lines, which are configured to extend parallel to each other in the column direction, corresponding to multiple sub-pixels arranged in the row direction. The protrusion is arranged to overlap with the corresponding source line among the plurality of source lines.

4. The active matrix substrate according to claim 3, characterized in that, The protrusion is tapered at the front end when viewed from above.

5. The active matrix substrate according to any one of claims 1 to 4, characterized in that, It also includes multiple gate lines, which are configured to extend parallel to each other in the row direction, corresponding to multiple sub-pixels arranged in the column direction. In each sub-pixel, the corresponding first groove and the corresponding second groove are arranged to overlap with the corresponding gate line.

6. A liquid crystal display device, characterized in that, include: Active matrix substrate according to any one of claims 1 to 4; A counter substrate is disposed opposite to the active matrix substrate; as well as A liquid crystal layer is disposed between the active matrix substrate and the opposing substrate.

Images