A layout repair method and device, electronic equipment and medium

Abstract

A layout repairing method and device, electronic equipment and medium, relate to the technical field of semiconductors, wherein the method comprises: detecting a mask layout to be processed based on a preset parameter to determine a target region with a top defect in the mask layout; the top defect represents a loss defect of the top of a three-dimensional photoresist pattern formed according to the mask layout; the preset parameter is used to evaluate the risk degree of the three-dimensional photoresist pattern with the top defect; and the target region in the mask layout is repaired. The mask layout is detected by using the preset parameter, the target region with the top defect in the mask layout is determined, and the mask layout is repaired. On the one hand, the top defect in the photoresist pattern formed according to the mask layout can be avoided, thereby improving the chip yield; on the other hand, the target region of the top defect can be determined without three-dimensional simulation of the entire mask layout, thereby reducing the time and cost consumed and improving the repair efficiency.

Description

Technical Field

[0001] This article relates to the field of semiconductor technology, and in particular to a layout repair method, apparatus, electronic device and medium. Background Technology

[0002] In chip manufacturing, the designed chip layout is first corrected using OPC (Optical Proximity Correction) to obtain the photomask layout, which is then used to fabricate the photomask. However, because the threshold model used in OPC to correct the layout produces a planar profile, it cannot represent the three-dimensional information of the photoresist pattern. This can lead to top defects in the photomask layout, causing top loss defects on the top of the photoresist pattern, resulting in bad pixels after etching and ultimately affecting chip yield. Summary of the Invention

[0003] This application provides a layout repair method, apparatus, electronic device, and medium.

[0004] In a first aspect, embodiments of this application provide a layout repair method, comprising: detecting a photomask layout to be processed based on preset parameters, and determining a target area with a top defect in the photomask layout; wherein, the top defect represents a loss defect at the top of a three-dimensional photoresist pattern formed based on the photomask layout; the preset parameters are used to assess the risk level of the top defect in the three-dimensional photoresist pattern; and repairing the target area in the photomask layout.

[0005] Secondly, embodiments of this application provide a pattern repair apparatus, including: a determination module and a repair module; the determination module is used to detect the photomask pattern to be processed based on preset parameters, and determine the target area with a top defect in the photomask pattern; wherein, the top defect represents the loss defect at the top of the three-dimensional photoresist pattern formed according to the photomask pattern; the preset parameters are used to assess the risk level of the top defect in the three-dimensional photoresist pattern; the repair module is used to repair the target area in the photomask pattern.

[0006] Secondly, embodiments of this application provide an electronic device, including a processor and a memory storing a computer program. When the computer program is executed by the processor, it can implement the method for repairing a photomask pattern as described in the above embodiments.

[0007] Thirdly, embodiments of this application provide a non-transient computer storage medium storing a computer program, which, when executed by a processor, implements the method for repairing a photomask layout described in the above embodiments.

[0008] This application includes a method, electronic device, and medium for repairing a photomask pattern. The method utilizes preset parameters to detect target areas with top defects in the photomask pattern and repairs the pattern. On one hand, it can avoid top defects in the photoresist pattern formed from the photomask pattern, thereby improving chip yield. On the other hand, it eliminates the need for 3D simulation of the entire photomask pattern to determine the target area of ​​the top defect, reducing time and cost and improving repair efficiency.

[0009] Other features and advantages of this application will be set forth in the following description, and will be apparent in part from the description, or may be learned by practicing the application. Other advantages of this application can be realized and obtained by means of the solutions described in the description and the accompanying drawings. Attached Figure Description

[0010] The accompanying drawings are used to provide an understanding of the technical solutions of this application and constitute a part of the specification. They are used together with the embodiments of this application to explain the technical solutions of this application and do not constitute a limitation on the technical solutions of this application.

[0011] Figure 1 This is a flowchart illustrating one embodiment of the layout repair method in this application.

[0012] Figure 2 This is a flowchart illustrating yet another embodiment of the layout repair method in this application.

[0013] Figure 3 This is a flowchart illustrating the process of determining the spatial imaging contrast corresponding to the location of the top defect in one embodiment of the layout repair method in this application.

[0014] Figure 4 This is a schematic diagram illustrating the sampling of the reference area in an embodiment of this application;

[0015] Figure 5 This is a flowchart illustrating yet another embodiment of the layout repair method in this application.

[0016] Figure 6 This is a schematic diagram of the layout repair device in the embodiments of this application. Detailed Implementation

[0017] The embodiments of this application will be described in detail below with reference to the accompanying drawings. Unless otherwise specified, the embodiments of this application and the features thereof can be combined arbitrarily with each other.

[0018] Unless otherwise defined, the technical or scientific terms used in this application shall have the ordinary meaning as understood by a person of ordinary skill in the art to which this application pertains.

[0019] The embodiments described in this application are not necessarily limited to the dimensions shown in the accompanying drawings, and the shapes and sizes of the components in the drawings do not reflect actual proportions. Furthermore, the drawings schematically illustrate ideal examples, and the embodiments described in this application are not limited to the shapes or values ​​shown in the drawings.

[0020] The ordinal numbers “first,” “second,” “third,” etc., used in this application are provided to avoid confusion among the constituent elements and do not indicate any order, quantity, or importance.

[0021] In this application, for convenience, terms such as "middle," "upper," "lower," "front," "rear," "vertical," "horizontal," "top," "bottom," "inner," and "outer" are used to indicate orientation or positional relationships in conjunction with the accompanying drawings. This is solely for the purpose of facilitating the description and simplification of this specification, and does not imply that the device or element referred to must have a specific orientation, or be constructed and operated in a specific orientation. Therefore, it should not be construed as a limitation of this application. The positional relationships of the constituent elements may be appropriately changed depending on the direction in which each constituent element is described. Therefore, the application is not limited to the terms used herein and may be appropriately replaced as needed.

[0022] In this application, unless otherwise expressly specified and limited, the terms "installation," "connection," and "linking" should be interpreted broadly. For example, they can refer to physical or signal connections, contact or integral connections; direct connections, indirect connections via intermediate components, or internal communication between two components. Those skilled in the art can understand the specific meaning of these terms in this application based on the specific circumstances.

[0023] Photolithography is a crucial step in chip manufacturing. During the photolithography process, the photoresist is illuminated from top to bottom. Due to differences in the diffusion degree of photoresist molecules at different heights, when the critical dimensions of the chip are small, the photoresist pattern is prone to top-loss defects. Typically, to avoid top-loss defects, a 3D simulation of the entire photomask layout is required to generate a corresponding 3D photoresist pattern. By analyzing the 3D photoresist pattern, the location of top-loss defects is identified, and the photomask layout is then repaired based on the identified defects. However, performing 3D simulation of the entire photomask layout is time-consuming and cannot meet the operating speed requirements of mass production.

[0024] To address the above problems, embodiments of this application provide a layout repair method, such as... Figure 1 As shown, the method may include the following steps.

[0025] Step 110: Detect the photomask pattern to be processed based on preset parameters, and determine the target area with top defects in the photomask pattern.

[0026] Among them, top defects refer to the loss defects at the top of the three-dimensional photoresist pattern formed based on the photomask layout; preset parameters are used to assess the risk level of top defects in the three-dimensional photoresist pattern.

[0027] In implementing this application, the inventors discovered that top defects in photoresist images are often accompanied by phenomena such as a decrease in edge steepness. The edge steepness is related to specific parameters of the photomask pattern (e.g., the logarithmic slope of the light intensity distribution of the photomask pattern). These specific parameters can be used as preset parameters to indirectly assess the risk of top defects in the three-dimensional photoresist pattern formed based on the photomask pattern.

[0028] As an example, preset parameters of the photomask pattern can be measured in advance, and the 3D photoresist pattern generated from the photomask pattern can be analyzed to identify top defects in the 3D photoresist pattern. Then, the top defects are mapped onto the photomask pattern through planar projection to determine the position of the top defects in the photomask pattern, thereby obtaining the values ​​of the preset parameters corresponding to the top defects. Then, by comparing the values ​​of the preset parameters corresponding to the top defects with those of the normal areas, the correspondence between the preset parameters and the top defects can be determined. Based on this correspondence, the risk of top defects appearing in the 3D photoresist pattern can be assessed using the preset parameters.

[0029] For example, after determining the correspondence between preset parameters and top defects, a table can be constructed showing the correspondence between the value ranges of the preset parameters and risk levels, with different value ranges corresponding to different risk levels. After obtaining the preset parameters of the photomask layout, the risk of top defects in each area of ​​the photomask layout can be determined by looking up the correspondence table, and then the areas with higher risks can be selected as target areas.

[0030] Step 120: Repair the target area in the photomask pattern.

[0031] In this embodiment, based on the target area detected in step 110, the photomask pattern can be repaired using a local repair method. For example, inverse lithography technology (ILT) can be used to repair the top defects in the target area, thereby improving the repair efficiency.

[0032] In this embodiment, the target area with a top defect in the photomask pattern is detected by using preset parameters, and the photomask pattern is repaired. On the one hand, this can avoid the appearance of top defects in the photoresist pattern formed based on the photomask pattern, thereby improving chip yield. On the other hand, the target area where the top defect is located can be determined without performing three-dimensional simulation of the entire photomask pattern, which can reduce the time and cost spent and improve repair efficiency.

[0033] In some optional implementations of this embodiment, the preset parameters include spatial imaging contrast. Spatial imaging contrast is negatively correlated with the risk level of top defects. The lower the spatial imaging contrast, the higher the risk of top defects.

[0034] In this embodiment, the spatial imaging contrast is used to assess the risk of top defects in the three-dimensional photoresist pattern. This can quickly and accurately determine the spatial imaging contrast of the photomask pattern, thereby detecting the target area, which helps to shorten the detection time and improve the repair efficiency.

[0035] In an optional example of this embodiment, spatial imaging contrast is used as a preset parameter, and the target area can be determined in the following way: determine the spatial imaging contrast of the photomask pattern; and determine the area in the photomask pattern whose spatial imaging contrast is less than a first threshold as the target area.

[0036] In this example, the first threshold can be obtained beforehand through experimental measurement of a reference photomask pattern. Here, the reference illumination pattern and the photomask pattern to be processed have the same parameters, such as design parameters, process parameters, photoresist materials, etc. By statistically analyzing the experimental results, a correspondence table between spatial imaging contrast and risk level is established. Different risk levels correspond to different ranges of spatial imaging contrast values. The first threshold is determined from the correspondence table according to actual needs. For example, when high accuracy is required, a larger spatial imaging contrast can be selected as the first threshold to more accurately identify top defects; when lower accuracy is required, a smaller spatial imaging contrast can be selected as the first threshold to obtain higher detection efficiency.

[0037] As an example, the spatial image contrast can be characterized by the normalized image log slope (NILS) of the mask layout. The global NILS of the mask layout can be calculated by scanning, and then the region with the smaller NILS is taken as the target region. NILS can be calculated by the following formula (1).

[0038]

[0039] In the formula, w represents the width of the light-transmitting area on the photomask pattern, and I represents the light intensity at the edge of the pattern.

[0040] In this example, the risk of top defects in each region of the photomask pattern is assessed by using spatial imaging contrast and a predetermined first threshold. This allows for the rapid and accurate identification of target regions, which helps improve the repair efficiency of the photomask pattern.

[0041] The following is for reference. Figure 2 , Figure 2A flowchart of one embodiment of the method for repairing a layout according to this application is shown, as follows: Figure 2 As shown, the process may include the following steps.

[0042] Step 210: Determine the spatial imaging contrast of the photomask pattern.

[0043] Step 220: Determine the regions in the photomask pattern whose spatial imaging contrast is less than the second threshold as undetermined regions.

[0044] In this embodiment, spatial imaging contrast is used as a preset parameter to assess the risk of top defects in the 3D photoresist pattern. Here, a second threshold is used to initially screen areas in the photomask pattern that may have top defects. Its value can be set based on experience or experimental data, and is usually close to a safety value (i.e., the spatial imaging contrast of areas without top defects). If the spatial imaging contrast of a certain area in the photomask pattern is less than the second threshold, it indicates that the area may have top defects, and this area can be designated as a pending area.

[0045] Step 230: Take one or more undetermined regions as reference regions, simulate the reference regions based on a rigorous photoresist model, and obtain the three-dimensional photoresist pattern corresponding to the reference regions.

[0046] Typically, simulating a 3D photoresist image based on a rigorous resist model takes a long time. To shorten the simulation time, a portion of the undetermined regions selected in step 220 can be used as a reference region, and then the reference region can be rigorously simulated.

[0047] The more reference areas there are, the higher the detection accuracy for top defects, but the higher the time and cost. Conversely, the fewer reference areas there are, the lower the detection accuracy for top defects, but the lower the time and cost. In practice, the number of reference areas can be determined based on detection accuracy and cost.

[0048] In this embodiment, the simulation is performed only on the reference area based on the rigorous photoresist model, rather than on the entire photomask layout, which can reduce the time and cost required for simulation.

[0049] Step 240: Determine the location of the top defect based on the three-dimensional photoresist pattern corresponding to the reference area.

[0050] In this embodiment, based on the three-dimensional photoresist pattern obtained from simulation, the three-dimensional morphology corresponding to the photomask pattern can be obtained, and the three-dimensional morphology of the three-dimensional photoresist pattern can be analyzed to determine the top defects.

[0051] Step 250: Determine the first threshold based on the spatial imaging contrast corresponding to the location of the top defect.

[0052] Since the three-dimensional photoresist pattern is generated based on the photomask layout, the top defect in the three-dimensional photoresist image can be projected onto the plane of the photomask layout to obtain the position of the top defect in the photomask layout, thereby obtaining the spatial imaging contrast at that position, and then determining the first threshold based on the spatial imaging contrast.

[0053] Step 260: Determine the target region as the area in the photomask pattern whose spatial imaging contrast is less than the first threshold.

[0054] As an example, the spatial imaging contrast of each region in the photomask pattern can be compared with a first threshold, and the region with a contrast less than the first threshold can be identified as the target region.

[0055] In an optional implementation of this embodiment, the region to be determined with a spatial imaging contrast less than a first threshold can be identified as the target region.

[0056] In this embodiment, after determining the first threshold, the region to be determined can be screened again based on the first threshold to determine the target region, which helps to improve the detection accuracy and efficiency of top defects.

[0057] Step 270: Repair the target area in the photomask pattern.

[0058] exist Figure 2 In the illustrated embodiment, a potential top defect area is first screened out based on a second threshold, and a reference area is selected from it. Then, the spatial imaging contrast corresponding to the top defect is determined by rigorous simulation of the reference area, and the first threshold is determined accordingly. On the one hand, this can improve the accuracy of the first threshold in distinguishing between the top defect and the normal area, which helps to improve the precision measurement accuracy of the top defect. On the other hand, performing rigorous simulation only on the reference area can reduce the time and cost of simulation compared to performing rigorous simulation on the entire photomask layout.

[0059] In some embodiments, prior to step 250 above, it can be done by Figure 3 The process shown determines the spatial imaging contrast corresponding to the location of the top defect, such as... Figure 3 As shown, the process may include the following steps:

[0060] Step 310: Based on the photomask layout or the three-dimensional photoresist pattern corresponding to the reference area, sample the reference area and calculate the spatial imaging contrast corresponding to each sampled area.

[0061] In this embodiment, the reference area in the photomask pattern can be sampled directly, or the corresponding area in the 3D photoresist pattern can be sampled, and the spatial imaging contrast of each sampled area can be calculated. The sampled area can be a 2D graphic or one or more pixel rows. In this way, the spatial imaging contrast of multiple subdivided sampled areas in the reference area can be obtained, which can present the difference in spatial imaging contrast between the top defect and the normal area in a more detailed and accurate manner.

[0062] like Figure 4 As shown, in some optional implementations of this embodiment, the reference area is sampled at equal intervals based on a preset sampling distance. Figure 4 N1 to N17 are sampling areas, each representing a pixel row in the reference area. N4 to N6 and N11 to N14 are located at two top defects, while the remaining sampling areas are located in the normal area.

[0063] In this embodiment, sampling the reference area at equal intervals can subdivide the reference area into uniformly distributed sampling areas, which helps to improve sampling efficiency.

[0064] In some alternative embodiments of this example, the reference region can also be sampled in the following manner: based on the spatial imaging contrast of multiple sub-regions in the reference region, the sampling distance corresponding to each sub-region is determined, and each sub-region is sampled based on the sampling distance corresponding to the sub-region, wherein the sampling distance is positively correlated with the spatial imaging contrast corresponding to the sub-region.

[0065] As an example, the lower the spatial imaging contrast of a sub-region, the higher the risk of top defects in the sub-region. Setting a smaller sampling distance for the sub-region can increase the number of sampling areas in the sub-region, thereby improving the sub-region's subdivision. Conversely, the higher the spatial imaging contrast of a sub-region, the lower the risk of top defects in the sub-region. Setting a larger sampling distance for the sub-region can reduce the number of sampling areas in the sub-region, thereby reducing the number of sampling times.

[0066] In this embodiment, the sampling distance is adaptively adjusted according to the spatial imaging contrast of the sub-region, which can balance the sampling efficiency and the accuracy of the spatial imaging contrast of the sampling area in depicting the three-dimensional shape.

[0067] Step 320: Based on the location of the top defect, determine the spatial imaging contrast corresponding to each sampling area covered by the top defect.

[0068] Step 330: Based on the spatial imaging contrast corresponding to each sampling area covered by the top defect, determine the spatial imaging contrast corresponding to the location of the top defect.

[0069] Continue to combine Figure 4 For example, the sampling area covered by the top defect A includes N11 to N14. The spatial imaging contrast corresponding to the position of the top defect A can be determined based on the spatial imaging contrasts corresponding to N11 to N14 respectively. For instance, the average value of the spatial imaging contrasts corresponding to N11 to N14 can be used as the spatial imaging contrast corresponding to the position of the top defect A; or, the maximum value among the spatial imaging contrasts corresponding to N11 to N14 can be used as the spatial imaging contrast corresponding to the position of the top defect A; or, the spatial imaging contrast corresponding to N11 or N14 located at the edge of the top defect can also be used as the spatial imaging contrast corresponding to the position of the top defect A.

[0070] exist Figure 3 In the illustrated embodiment, the reference area is subdivided into smaller sampling areas by sampling, which can more accurately determine the coverage area of ​​the top defect. Then, based on the spatial imaging contrast corresponding to the sampling area covered by the top defect, the spatial imaging contrast corresponding to the position of the top defect can be more accurately determined, which helps to improve the accuracy of the first threshold.

[0071] The following is for reference. Figure 5 , Figure 5 A flowchart of yet another embodiment of the method for repairing a layout according to this application is shown, as follows: Figure 5 As shown, the process may include the following steps.

[0072] Step 510: Detect the photomask pattern to be processed based on preset parameters, and determine the target area with top defects in the photomask pattern.

[0073] Step 520: Repair the target area in the photomask pattern.

[0074] Step 530: Simulate the photomask pattern based on a rigorous photoresist model to obtain the three-dimensional photoresist pattern corresponding to the photomask pattern, and detect whether there are top defects in the three-dimensional photoresist pattern corresponding to the photomask pattern.

[0075] Step 540: If there is a top defect in the 3D photoresist pattern corresponding to the photomask pattern, repair the photomask pattern based on the detected top defect.

[0076] Step 550: Simulate the repaired photomask layout based on a rigorous photoresist model. Detect the presence of top defects in the repaired photomask layout based on the simulation results. Repair the repaired photomask layout based on the detected top defects until there are no top defects in the repaired photomask layout.

[0077] In this embodiment, after repairing the photomask layout based on the detected target area, a rigorous photoresist model is used to perform a comprehensive simulation of the photomask layout. The simulation results in a three-dimensional photoresist image to detect whether the top defects in the photomask layout have been completely repaired, and the detected top defects are repaired. This ensures that the top defects in the photomask layout are completely repaired, which can avoid or reduce the risk of top defects appearing in the photoresist image formed based on the photomask layout, and helps to improve the chip yield.

[0078] Continue to refer to Figure 5 In some embodiments, Figure 5 The process shown may also include: step 500, performing optical proximity correction on the original chip layout to obtain the photomask layout to be processed.

[0079] In this embodiment, the photomask pattern to be processed is obtained by optical proximity correction of the original chip layout. The optical proximity effect can be used to analyze and correct the two-dimensional contours in the chip layout, so that the two-dimensional contours of the photomask pattern meet the convergence requirements. Then, the top defects are repaired through steps 510 and 520, so that the three-dimensional photoresist image formed by the photomask pattern also meets the convergence requirements. On the one hand, this can improve the reliability of the photomask pattern, thereby improving the chip yield. On the other hand, by using the optical proximity effect to correct the two-dimensional contours before repairing the top defects, it is possible to avoid using reverse lithography to repair the top defects and two-dimensional contours at the same time, thereby reducing the running time of reverse lithography and making the repair time of the photomask pattern meet the mass production requirements.

[0080] This application also provides a layout repair device, such as... Figure 6 As shown, the device may include a determining module 610 and a repair module 620; the determining module 610 is used to detect the photomask pattern to be processed based on preset parameters, and determine the target area with top defects in the photomask pattern; wherein, the top defect refers to the loss defect at the top of the three-dimensional photoresist pattern formed according to the photomask pattern; the preset parameters are used to assess the risk level of the three-dimensional photoresist pattern having top defects; the repair module 620 is used to repair the target area in the photomask pattern.

[0081] This application also provides an electronic device, including a processor and a memory storing a computer program. In some embodiments, when the computer program is executed by the processor, it can implement the layout repair method in any of the above embodiments.

[0082] This application also provides a non-transient computer storage medium storing a computer program. In some embodiments, when the computer program is executed by a processor, it implements the layout repair method in any of the above embodiments.

[0083] In the description of this specification, the references to terms such as "one embodiment," "some embodiments," "example," "specific example," or "some examples," etc., indicate that a specific feature, structure, material, or characteristic described in connection with that embodiment or example is included in at least one embodiment or example of this application. In this specification, the illustrative expressions of the above terms do not necessarily refer to the same embodiment or example. Furthermore, the specific features, structures, materials, or characteristics described may be combined in any suitable manner in one or more embodiments or examples. Moreover, without contradiction, those skilled in the art can combine and integrate the different embodiments or examples described in this specification, as well as the features of different embodiments or examples.

[0084] Although embodiments of this application have been shown and described above, it is understood that the above embodiments are exemplary and should not be construed as limiting this application. Those skilled in the art can make changes, modifications, substitutions and variations to the above embodiments within the scope of this application.

Claims

1. A method for restoring a map, characterized in that, include: The photomask pattern to be processed is inspected based on preset parameters, and a target area with a top defect is identified in the photomask pattern; wherein, the top defect refers to the loss defect at the top of the three-dimensional photoresist pattern formed based on the photomask pattern; the preset parameters are used to assess the risk level of the top defect in the three-dimensional photoresist pattern. Repair the target area in the photomask pattern.

2. The method according to claim 1, characterized in that, The preset parameters include spatial imaging contrast.

3. The method according to claim 2, wherein the photomask pattern to be processed is inspected based on preset parameters, and a target region with a top defect is determined in the photomask pattern, comprising: Determine the spatial imaging contrast of the photomask pattern; The region in the photomask pattern with a spatial imaging contrast less than a first threshold is defined as the target region.

4. The method according to claim 3, characterized in that, Before determining the region in the photomask pattern with a spatial imaging contrast less than a first threshold as the target region, the method further includes: The regions in the photomask layout with spatial imaging contrast less than the second threshold are defined as undetermined regions. One or more of the undetermined regions are used as reference regions. The reference regions are simulated based on a rigorous photoresist model to obtain the three-dimensional photoresist pattern corresponding to the reference regions. The location of the top defect is determined based on the three-dimensional photoresist pattern corresponding to the reference area; The first threshold is determined based on the spatial imaging contrast corresponding to the location of the top defect.

5. The method according to claim 4, characterized in that, Determining the target region as the area in the photomask pattern with a spatial imaging contrast less than a first threshold includes: The region to be determined where the spatial imaging contrast is less than the first threshold is defined as the target region.

6. The method according to claim 4, characterized in that, Before determining the first threshold based on the spatial imaging contrast corresponding to the location of the top defect, the method further includes: Based on the photomask layout or the three-dimensional photoresist pattern corresponding to the reference area, the reference area is sampled, and the spatial imaging contrast corresponding to each sampled area is calculated. Based on the location of the top defect, determine the spatial imaging contrast corresponding to each sampling area covered by the top defect; Based on the spatial imaging contrast corresponding to each sampling area covered by the top defect, the spatial imaging contrast corresponding to the location of the top defect is determined.

7. The method according to claim 6, characterized in that, Sampling the reference region includes: Based on a preset sampling distance, the reference area is sampled at equal intervals; or, Based on the spatial imaging contrast of each of the multiple sub-regions in the reference region, the sampling distance corresponding to each sub-region is determined, and each sub-region is sampled based on the sampling distance corresponding to the sub-region, wherein the sampling distance is positively correlated with the spatial imaging contrast of the sub-region.

8. The method according to claim 1, characterized in that, After repairing the target area in the photomask pattern, the method further includes: The photomask pattern is simulated based on a rigorous photoresist model to obtain the three-dimensional photoresist pattern corresponding to the photomask pattern, and the presence of top defects in the three-dimensional photoresist pattern corresponding to the photomask pattern is detected. If a top defect exists in the three-dimensional photoresist pattern corresponding to the photomask pattern, the photomask pattern is repaired based on the detected top defect; The repaired photomask layout is simulated based on a rigorous photoresist model. The simulation results are used to detect whether there are top defects in the repaired photomask layout. The repaired photomask layout is then repaired based on the detected top defects until there are no top defects in the repaired photomask layout.

9. The method according to claim 1, characterized in that, Before detecting the mask layout to be processed based on preset parameters, the method further includes: The original chip layout is corrected for optical proximity effect to obtain the photomask layout to be processed.

10. A layout repair device, characterized in that, include: Identify and repair modules; The determining module is used to detect the photomask pattern to be processed based on preset parameters, and to determine the target area with top defects in the photomask pattern; wherein, the top defect refers to the loss defect at the top of the three-dimensional photoresist pattern formed according to the photomask pattern; the preset parameters are used to assess the risk level of the three-dimensional photoresist pattern having top defects; The repair module is used to repair the target area in the photomask pattern.

11. An electronic device comprising a processor and a memory storing a computer program, characterized in that, When the computer program is executed by the processor, it can implement the layout repair method according to any one of claims 1 to 9.

12. A non-transient computer storage medium storing a computer program, characterized in that, When the computer program is executed by a processor, it implements the layout repair method as described in any one of claims 1 to 9.

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