Optical proximity correction method for a layout and related apparatus

Abstract

The application discloses an optical proximity correction method of a layout and a related device. Firstly, the target layout can be partitioned based on the density of the previous layer layout in the target layout to obtain a plurality of partition images, and a test layout of the target layout is designed according to the partition images. Then, the test layout is transferred to a mask to obtain a test mask, and the exposure condition is determined according to the target layout. The test mask is exposed based on the exposure condition to obtain an exposure pattern containing a plurality of exposure images. For each exposure image, a corresponding set of correction rules is constructed according to the exposure size and the standard size of the target layout, so as to construct a correction rule library of the target layout, and the correction rule library contains a plurality of sets of correction rules corresponding to the exposure images in a one-to-one manner. Finally, the plurality of partition images of the target layout are optically proximity corrected by using the correction rule library of the target layout to obtain a corrected layout. The application can reduce the difference between the photoresist pattern and the target pattern.

Description

Technical Field

[0001] This application relates to the field of integrated circuit manufacturing technology, specifically to a method and apparatus for optical proximity effect correction of a layout. Background Technology

[0002] In integrated circuit manufacturing, rule-based optical proximity correction (OPC) is used to correct mask patterns, creating a corrected mask image. This corrected mask image is then transferred to the photoresist on the wafer, resulting in a photoresist pattern that more closely resembles the target pattern. However, due to various reasons, such as uneven density in the preceding layers of the mask image leading to uneven surface texture, the same pattern on the mask may produce different photoresist patterns at different locations. Current technology uses the same set of correction rules to correct all mask images, which fails to address these differences, resulting in significant discrepancies between the photoresist pattern and the target pattern.

[0003] Therefore, how to achieve more accurate optical proximity effect correction in order to reduce the difference between the photoresist pattern and the target pattern is a technical problem that urgently needs to be solved by those skilled in the art. Summary of the Invention

[0004] To address the aforementioned issues, this application provides a method and apparatus for correcting the optical proximity effect of a pattern, which can achieve more accurate correction of the optical proximity effect to reduce the difference between the photoresist pattern and the target pattern.

[0005] The embodiments of this application disclose the following technical solutions:

[0006] A method for correcting the optical proximity effect of a layout, the method comprising:

[0007] The target layout is partitioned based on the density of the previous layer layout to obtain multiple partition images. A test layout of the target layout is designed based on the multiple partition images. The test layout includes multiple test images. The target layout includes multiple line graphics with the same standard size. The standard size includes standard line width, standard line end shape, standard concave corner, and standard convex corner.

[0008] The test pattern is transferred onto a mask to obtain a test mask, and the exposure conditions are determined based on the target pattern.

[0009] An exposure pattern is obtained by performing an exposure operation on the test mask based on the exposure conditions; the exposure pattern includes multiple exposure images.

[0010] For each of the exposed images, a set of correction rules is constructed based on its exposure size and the standard size to obtain the correction rule library of the target image; the correction rule library includes multiple sets of correction rules, and each set of correction rules has a one-to-one correspondence with the exposed image;

[0011] Based on the correction rule base of the target map, optical proximity effect correction is performed on each of the multiple partition images of the target map to obtain the corrected map.

[0012] In one possible implementation, partitioning the target layout based on the density of the previous layer layout in the target layout to obtain multiple partition images, and designing a test layout of the target layout based on the multiple partition images of the target layout, includes:

[0013] When there are differences in graphic density among the images in the front layer layout, the images in the front layer layout with a graphic density greater than a first density threshold are divided into first partition images, and the images in the front layer layout with a graphic density less than a second density threshold are divided into second partition images; the first density threshold is greater than the second density threshold.

[0014] The layouts corresponding to the first partition image and the second partition image are designed respectively to obtain the first test image and the second test image; the first partition image and the first test image have a corresponding relationship; the second partition image and the second test image have a corresponding relationship.

[0015] Based on the positions of the first partition image and the second partition image in the target layout, the correspondence between the first partition image and the first test image, and the correspondence between the second partition image and the second test image, the first test image and the second test image are stitched together according to their corresponding positions to obtain the test layout.

[0016] Wherein, the first partition image and the second partition image are both partition images; the first test image and the second test image are both test images.

[0017] In one possible implementation, the step of partitioning the target layout to obtain multiple partition images, and designing a test layout of the target layout based on the multiple partition images of the target layout, further includes:

[0018] When there is no difference in graphic density in the image of the previous layer, the target image is uniformly divided into M rectangular regions to obtain M third partition images; M is a positive integer;

[0019] Design the layout corresponding to each of the third partition images to obtain multiple third test images; one third partition image corresponds to one third test image.

[0020] Based on the position of each of the third partition images in the target layout, and the correspondence between the third partition images and the third test images, multiple third test images are stitched together according to their corresponding positions to obtain the test layout;

[0021] Each of the third test images is a test image.

[0022] In one possible implementation, each of the test images includes multiple line graphics with different test sizes; the difference between each test size and the standard size width is within a certain range.

[0023] The step of constructing corresponding correction rules for each exposed image based on its exposure size and the standard size to obtain the correction rule library for the target layout includes:

[0024] Iterate through each of the exposed images to obtain all the exposure dimensions within the exposed image;

[0025] In each exposed image, the exposed size that is equal to the standard size among all the exposed sizes is determined as the reference size;

[0026] The reference size is determined as the correction size corresponding to the test size in the test image;

[0027] A set of correction rules is constructed based on the aforementioned correction dimensions;

[0028] The correction rules corresponding to all the exposure images are summarized to obtain the correction rule library; one set of correction rules in the correction rule library corresponds to one exposure image.

[0029] In one possible implementation, the step of performing optical proximity effect correction on multiple partition images of the target map one by one according to the correction rule base of the target map to obtain a corrected map includes:

[0030] Traverse each partition image of the target map and expand the boundaries of the partition images to obtain extended images;

[0031] In the correction rule base, the correction rules for the partitioned image corresponding to the extended image are determined;

[0032] Based on the correction rules of the partitioned image corresponding to the extended image, the extended image is corrected for optical proximity effect to obtain the corrected extended image;

[0033] Based on the expansion size of the boundary, the corrected expanded image is subjected to boundary cutting to obtain the corrected region;

[0034] Once each of the partition images of the target map is corrected to the corrected region, the target map completes the optical proximity effect correction and obtains the corrected map.

[0035] In one possible implementation, expanding the boundaries of the partitioned image to obtain an extended image includes:

[0036] Calculate the optical diameter, and determine the outward expansion amount based on the optical diameter; the outward expansion amount is greater than or equal to the optical diameter.

[0037] The expanded image is obtained by expanding each edge of the partitioned image based on the expansion amount;

[0038] Wherein, OD≈k*λ / (NA*(1+σmax))), where k is the estimation factor; λ is the wavelength of the lithography machine's light source; NA is the numerical aperture of the lithography machine; and σmax is the maximum outer diameter of the lithography machine's light source.

[0039] An optical proximity correction device for a layout, the device comprising:

[0040] A partitioning design unit is used to partition the target layout based on the density of the previous layer layout in the target layout to obtain multiple partition images, and to design a test layout of the target layout based on the multiple partition images of the target layout; the test layout includes multiple test images; the target layout includes multiple line graphics with the same standard size; the standard size includes standard line width, standard line end shape, standard concave corner and standard convex corner;

[0041] A transfer unit is used to transfer the test pattern onto a mask to obtain a test mask.

[0042] The first determining unit is used to determine the exposure conditions based on the target layout.

[0043] An exposure unit is used to perform an exposure operation on the test mask based on the exposure conditions to obtain an exposure pattern; the exposure pattern includes multiple exposure images.

[0044] The rule base construction unit is used to construct a set of correction rules for each exposed image based on its exposure size and the standard size, so as to obtain the correction rule base of the target image; the correction rule base includes multiple sets of correction rules, and each set of correction rules has a one-to-one correspondence with the exposed image;

[0045] The first correction unit is used to perform optical proximity effect correction on multiple partition images of the target map according to the correction rule library of the target map to obtain a corrected map.

[0046] In one possible implementation, the first correction unit specifically includes:

[0047] The first boundary expansion unit is used to traverse each of the partition images of the target map and expand the boundary of the partition image to obtain an expanded image.

[0048] The fourth determining unit is used to determine the correction rules for the partitioned image corresponding to the extended image in the correction rule base;

[0049] The second correction unit is used to perform optical proximity effect correction on the extended image based on the correction rules of the partition image corresponding to the extended image, so as to obtain the corrected extended image.

[0050] A boundary cutting unit is used to cut the corrected extended image based on the extension size of the boundary expansion to obtain the corrected region;

[0051] Once each of the partition images of the target map is corrected to the corrected region, the target map completes the optical proximity effect correction and obtains the corrected map.

[0052] An optical proximity effect correction device for a layout includes: a memory, a processor, and a computer program stored in the memory and executable on the processor. When the processor executes the computer program, it implements the optical proximity effect correction method for the layout as described above.

[0053] A computer-readable storage medium storing instructions that, when executed on a terminal device, cause the terminal device to perform the optical proximity effect correction method for a layout as described above.

[0054] Compared with the prior art, this application has the following beneficial effects:

[0055] This application provides a method and related apparatus for correcting the optical proximity effect of a layout. Specifically, when implementing the optical proximity effect correction method provided in the embodiments of this application, firstly, the target layout can be partitioned based on the density of the previous layer layout to obtain multiple partition images, and a test layout of the target layout is designed based on these partition images. Next, the test layout is transferred onto a mask to form a test mask, and exposure conditions are determined based on the characteristics of the target layout. Then, the test mask is exposed based on the exposure conditions to obtain an exposure pattern, which includes multiple exposure images. Next, for each exposure image, corresponding correction rules are constructed based on its corresponding exposure size and the standard size of the target layout, forming a correction rule library for the target layout. This correction rule library includes multiple sets of correction rules, each set of correction rules corresponding one-to-one with an exposure image. Finally, the optical proximity effect is corrected for each partition image of the target layout using the correction rule library, thereby obtaining a corrected layout. This application can adopt targeted correction rules according to the characteristics of different partitions and exposure images, thereby effectively solving the problems of photoresist pattern deformation in different positions of the same mask pattern due to uneven pattern density and poor effect of using the same set of correction rules to correct all patterns, thus significantly reducing the difference between the photoresist pattern and the target pattern. Attached Figure Description

[0056] To more clearly illustrate the technical solutions in this embodiment or the prior art, the drawings used in the description of the embodiment or the prior art will be briefly introduced below. Obviously, the drawings described below are only some embodiments of this application. For those skilled in the art, other drawings can be obtained based on these drawings without creative effort.

[0057] Figure 1 A graphic comparison diagram provided for embodiments of this application;

[0058] Figure 2 A flowchart illustrating a method for correcting the optical proximity effect of a layout, provided in an embodiment of this application;

[0059] Figure 3 A flowchart illustrating a test layout design method provided in this application embodiment;

[0060] Figure 4 A density partitioning comparison diagram of a target layout and a test layout is provided for an embodiment of this application;

[0061] Figure 5 A flowchart illustrating another test layout design method provided in this application embodiment;

[0062] Figure 6Another density partitioning comparison diagram of target layout and test layout provided for an embodiment of this application;

[0063] Figure 7 A flowchart illustrating a method for constructing a modified rule base, as provided in an embodiment of this application;

[0064] Figure 8 A flowchart illustrating another method for correcting the optical proximity effect of a layout, provided in an embodiment of this application;

[0065] Figure 9a A schematic diagram of a partitioned target layout and its outer boundary region is provided for an embodiment of this application;

[0066] Figure 9b A schematic diagram of a target layout partition image and its corrected extended image provided in an embodiment of this application;

[0067] Figure 9c A schematic diagram of a corrected expanded image and a retained correction area provided in an embodiment of this application;

[0068] Figure 10 This is a schematic diagram of the structure of an optical proximity effect correction device for a layout provided in an embodiment of this application. Detailed Implementation

[0069] To facilitate understanding of the technical solutions provided in the embodiments of this application, the background technology involved in the embodiments of this application will be described below.

[0070] In integrated circuit manufacturing, OPC (Optimal Design Process) based on unified rules is used to modify mask patterns to optimize the photoresist pattern transferred onto the wafer, making it closer to the target design (e.g., ...). Figure 1 As shown, Figure 1 The linewidth of the photoresist pattern in the image is 172.3 nanometers. However, due to issues such as uneven density of the front layer of the mask image, the same pattern may produce different photoresist patterns at different locations. The current unified correction rules cannot effectively solve these differences, resulting in a large deviation between the photoresist pattern and the target pattern.

[0071] To address this issue, this application provides a method and related apparatus for correcting the optical proximity effect of a layout. First, the target layout is divided into multiple regions based on the density of the preceding layer layout. Then, a test layout is designed based on these regions. Next, the test layout is transferred onto a mask to generate a test mask, and exposure conditions are determined based on the characteristics of the target layout. Subsequently, under these exposure conditions, the test mask is exposed to obtain an exposure pattern composed of multiple exposure images. For each exposure image, a set of correction rules is constructed according to its exposure size and the standard size of the target layout. These correction rules form a correction rule library, and each set of correction rules maintains a one-to-one correspondence with the corresponding exposure image. Finally, these correction rule libraries are used to correct the optical proximity effect of each region of the target layout, thereby generating a corrected layout. This application obtains more accurate exposure sizes by designing a test layout and performing exposure operations. This data allows for the construction of exclusive correction rules for each region based on specific exposure conditions, effectively avoiding lithographic errors caused by a uniform rule correction scheme. Meanwhile, by constructing a correction rule base and precisely correcting each partition image, this application can significantly improve the consistency between the corrected pattern and the target pattern, avoiding lithographic errors caused by uniform correction rules.

[0072] The technical solutions of the embodiments of the present invention will be clearly and completely described below with reference to the accompanying drawings. Obviously, the described embodiments are only some embodiments of this application, and not all embodiments. Based on the embodiments of this application, all other embodiments obtained by those of ordinary skill in the art without creative effort are within the scope of protection of this application.

[0073] See Figure 2 This figure is a flowchart of a method for correcting the optical proximity effect of a layout according to an embodiment of this application, as shown below. Figure 2 As shown, the optical proximity effect correction method for this layout may include steps S201-S205:

[0074] S201: Divide the target layout into multiple partition images, and design a test layout of the target layout based on the multiple partition images of the target layout.

[0075] To correct for optical proximity effects in a target image, the target image can first be partitioned into multiple regions, each containing a partitioned image. This allows for more refined analysis and correction of the image. Different regions may have different design requirements; therefore, partitioning allows for the application of different correction methods in different regions.

[0076] Simultaneously, a test layout can be designed based on these partitioned images. The test layout contains multiple test images, and these areas are used to evaluate the layout's performance, exposure effects, and correction requirements in different regions. The design of the test layout helps simulate real-world layout conditions, thereby determining the impact of optical proximity effects.

[0077] The target pattern consists of multiple line graphics with the same standard dimensions. This means that all graphics use the same base size during the pattern design process, but these line widths may be affected by optical effects during subsequent exposure. Therefore, this standard size needs to be referenced during the correction process. The standard size includes the following aspects to ensure accurate pattern transfer and good electrical performance:

[0078] (1) Standard Line Width: Line width refers to the width of lines in a pattern. In the photolithography process, the standard line width specifies the minimum line width required for circuit manufacturing. It is a key parameter in the design rules, affecting the performance and reliability of the circuit. The selection of the standard line width needs to take into account factors such as the resolution of the photolithography technology, the properties of the material, and the current transmission efficiency.

[0079] (2) Standard Line End: A line end refers to the end portion of a line. In photolithography pattern design, the end of a line must generally be designed to avoid excessive "tails" or "sharp corners" to prevent short circuits or uneven current distribution. The standard line end defines the shape and size of the line end to ensure its reliability and consistency in subsequent processes.

[0080] (3) Standard Concave Corner: A concave corner refers to the interior corner portion of a pattern. When designing circuit patterns, the shape and size of the concave corner usually require special attention because the propagation of light during photolithography can cause irregularities in shape, thus affecting the circuit's functionality. A standard concave corner ensures that excessive reflection or defects do not occur at the interior corner during exposure and etching.

[0081] (4) Standard Convex Corner: A convex corner refers to the outer corner of a pattern. Similar to a concave corner, convex corners should also avoid excessive angle or shape changes during design. Standard convex corner designs are generally intended to reduce distortion caused by optical effects during exposure and to ensure material uniformity and reliability at the corner.

[0082] In the test layout, each test image contains multiple lines of varying sizes. These lines are designed with different dimensions to evaluate the impact of optical effects and exposure performance at different sizes. By setting graphs with different linewidths, different real-world scenarios can be simulated, helping to discover the influence of optical effects on different linewidths. The difference between each test size and the standard size of the target layout is limited to a specific range. This range controls the design of the test sizes to ensure that the test images simulated by the test layout cover all possible exposure variations without exceeding the effective controllable range of optical effect corrections.

[0083] S202: Transfer the test pattern onto a mask to obtain a test mask, and determine the exposure conditions based on the target pattern.

[0084] After designing the test layout for the target layout, the test layout can be transferred onto a mask to obtain a test mask. A mask is a tool used to transfer layout patterns onto a wafer. Here, the pattern on the mask determines the distribution of the light beam during exposure, so its design is crucial.

[0085] Simultaneously, the exposure conditions need to be determined based on the characteristics of the target image. This includes exposure intensity, time, and type of light source. Exposure conditions directly affect the detail of the pattern; therefore, setting appropriate exposure conditions according to the requirements of the target image is crucial.

[0086] S203: Perform an exposure operation on the test mask based on the exposure conditions to obtain an exposure pattern.

[0087] Based on the previously set exposure conditions, the test mask is exposed. This process involves illuminating the mask with ultraviolet light or other types of light sources, thereby transferring the pattern on the mask onto the photoresist or other photosensitive material. The exposure pattern is the result of the exposure operation and is usually composed of multiple exposure images. These exposure images represent different effects that may occur in the actual exposure process, including changes caused by optical proximity effects.

[0088] It's important to clarify that "exposure images" refer to images formed within the same exposure process, collectively constituting the final exposure pattern. Specifically, the exposure pattern is formed by illuminating a mask with ultraviolet light or other types of light sources, transferring the pattern from the mask onto photoresist or other photosensitive materials. The exposure result of this process typically consists of multiple "exposure images." These "exposure images" do not originate from different exposures, but rather represent the exposure effects on different areas of the test mask within the same exposure operation, using set exposure conditions. Due to the complexity of the test pattern, it is divided into multiple regions. Each region will exhibit different effects during exposure due to factors such as optical characteristics and light source intensity, including the influence of optical proximity effects. Therefore, multiple exposure images are generated from a single exposure operation, reflecting the different exposure effects that may occur at different locations on the pattern, rather than being the results of different exposures.

[0089] S204: For each of the exposed images, construct a set of correction rules based on its exposure size and the standard size to obtain the correction rule library for the target layout.

[0090] For each exposed image, a corresponding correction rule is constructed based on the test size in the test pattern corresponding to the exposure size with the same width as the standard size among all its exposure sizes. The exposure size is the actual size of the pattern after the exposure operation, while the standard size is the size of the target pattern, which is also the ideal size of the target pattern after exposure. Due to factors such as optical proximity effect, the linewidth of the target pattern after exposure may not match the standard size. Therefore, a correction rule needs to be constructed to compensate for the linewidth before exposure, so that the compensated linewidth matches the standard size after exposure.

[0091] All correction rules are centralized in a library, with each set of rules corresponding one-to-one with a specific exposure image. The correction rule library provides rules and a basis for subsequent optical proximity effect correction.

[0092] S205: Based on the correction rule base of the target map, perform optical proximity effect correction on each of the multiple partition images of the target map to obtain a corrected map.

[0093] Using the correction rule library built in step S204, correction operations are performed on each partition image in the target layout. Each partition image has a corresponding correction rule, which is built based on the actual linewidth and standard size after the test mask exposure. During the correction process, optical proximity effects are corrected for each partition image in the target layout according to its corresponding specific correction rule.

[0094] After the above correction operations, all partition images in the target layout have been corrected accordingly. The final corrected layout can more accurately reflect the original design intent and reduce errors caused by optical proximity effect.

[0095] Based on the content of S201-S205, the target layout is first finely partitioned according to the density of the previous layer layout, resulting in multiple partition images. A test layout is then designed based on these regions. The target layout itself contains multiple line graphics with the same standard size, providing basic information for subsequent corrections. Next, the test layout is mapped onto a mask to prepare a test mask, and exposure conditions are set according to the target layout. Under the determined exposure conditions, the test mask is exposed, generating an exposure pattern containing multiple exposure images. For each exposure image, corresponding correction rules are constructed based on its exposure size and standard size, thus forming a correction rule library for the target layout. This correction rule library consists of multiple sets of correction rules, establishing a one-to-one correspondence with the exposure images. Finally, based on the correction rule library of the target layout, optical proximity correction is performed on each partition image of the target layout to obtain the corrected layout, ensuring the final realization of the desired photoresist pattern. This application can adopt targeted correction rules according to the characteristics of different partitions and exposure images, thereby effectively solving the problems of photoresist pattern deformation and accuracy reduction caused by uneven pattern density, and significantly reducing the difference between the photoresist pattern and the target pattern.

[0096] See Figure 3 , Figure 3 The flowchart of a test layout design method provided in this application embodiment describes a step S201 method of partitioning the target layout to obtain multiple partition images, and designing a test layout of the target layout based on the multiple partition images. This can be specifically implemented through steps S301-S303.

[0097] S301: When there is a difference in graphic density between the images in the front layer layout, the images in the front layer layout with a graphic density greater than a first density threshold are divided into first partition images, and the images in the front layer layout with a graphic density less than a second density threshold are divided into second partition images.

[0098] When there are differences in graphic density in the preceding layers of the target image, the preceding layers are divided into different partition images based on their graphic density. Specifically, images with a graphic density greater than a first density threshold are assigned to the first partition image (higher density), while images with a graphic density less than a second density threshold are assigned to the second partition image (lower density). Figure 4 As shown, Figure 4The left image in the image is the target map, which includes the front-layer map and the map region. Images in the front-layer map with a graphic density greater than a first density threshold are classified as high graphic density regions (i.e., the first partition region, which includes the first partition image). Images in the front-layer map with a graphic density less than a second density threshold are classified as low graphic density regions (i.e., the second partition region, which includes the second partition image).

[0099] By dividing the image into zones using different density thresholds, the density characteristics of different regions can be accurately distinguished, thus providing a basis for subsequent design and testing.

[0100] It should be noted that this application does not impose specific restrictions on the size of the first density threshold and the second density threshold, and users can adjust the size of the first density threshold and the second density threshold according to actual needs.

[0101] S302: Design the layouts corresponding to the first partition image and the second partition image respectively to obtain the first test image and the second test image.

[0102] For each partitioned image, a corresponding test image needs to be designed. The test image is an experimental area used to simulate the optical proximity effect during actual exposure; it typically contains lines of varying widths to evaluate the impact of optical effects on the layout. Therefore, based on the previously defined first and second partitioned images, corresponding layouts are designed to obtain the first and second test images. The first partitioned image corresponds to the first test image, and the second partitioned image also corresponds to the second test image.

[0103] In one possible implementation, the key objective of test image design is to achieve a linewidth consistent with the target standard size after exposure. Therefore, multiple sizes need to be selected for testing when designing the first and second test images. Taking linewidth as an example, these linewidths used for testing should start from a range slightly larger or smaller than the target standard size and gradually increase or decrease to cover possible optical errors. For instance, if the target standard linewidth is 200 nm, then multiple linewidths such as 180 nm, 200 nm, 220 nm, and 240 nm can be selected as the linewidths of the test images. Furthermore, the lines in the test images are typically arranged in a grid layout or uniformly distributed to test the interaction between different linewidths and adjacent lines during exposure. The line spacing within each test image must be appropriately selected to ensure that the interaction between lines reflects the optical proximity effect during actual exposure.

[0104] Designing a corresponding test image for each partition image ensures that the test results accurately reflect the actual characteristics of that partition image. By establishing the correspondence between the partition images and the test images, subsequent correction operations can be performed more precisely.

[0105] S303: Based on the positions of the first partition image and the second partition image in the target layout, the correspondence between the first partition image and the first test image, and the correspondence between the second partition image and the second test image, the first test image and the second test image are stitched together according to their corresponding positions to obtain the test layout.

[0106] The first and second test images designed in step S302 are stitched together according to their positions in the target layout to form a complete test layout. Specifically, the first test image is stitched to the position of the first partition image, and the second test image is stitched to the position of the second partition image. By stitching the various test images together, a complete test layout is obtained. This test layout will be used for subsequent optical proximity effect correction and performance verification, ensuring that each region in the design can pass the correct tests to verify the accuracy of the photolithography process. Figure 4 As shown, Figure 4 The right image in the diagram is the test layout, which includes a first test image and a second test image. The position of the first test image corresponds to the position of the high graphics density area (i.e., the first partition area, which includes the first partition image), and the position of the second test image corresponds to the position of the low graphics density area (i.e., the second partition area, which includes the second partition image).

[0107] Wherein, the first partition image and the second partition image are both partition images; the first test image and the second test image are both test images.

[0108] Through the above steps, the target map can be systematically divided into different partition images, and corresponding test images can be designed to ultimately generate a complete test map, providing an accurate basis for subsequent exposure and correction.

[0109] See Figure 5 , Figure 5 The flowchart illustrates another test layout design method provided in this application embodiment. Accordingly, step S201 partitions the target layout to obtain multiple partition images, and designs the test layout of the target layout based on the multiple partition images of the target layout. Specifically, this can also be implemented through steps S501-S503:

[0110] S501: When there is no difference in graphic density in the image of the previous layer, the target layer is uniformly divided into M rectangular regions to obtain M third partition images.

[0111] The target image is divided into multiple smaller regions, each of which can be optimized, tested, and validated independently. This helps reduce testing complexity and allows for more detailed observation of the impact of different regions on the exposure process. If the target image has a uniform pattern density, it can be directly divided into M rectangular regions of the same size. This division method is simple and efficient. Specifically, based on the uniformity of the preceding image, the target image can be divided into M rectangular regions using a uniform division method. Each region is relatively independent, and differences in pattern density between regions are not considered. Figure 6 As shown, Figure 6 The leftmost image is the target layout. The density distribution of the target layout, including the previous layer layout, is relatively uniform, so it is divided into 9 equal parts.

[0112] Uniform division simplifies the design and testing process of the layout, especially when the density is uniform, eliminating the need for complex optical adjustments or special designs.

[0113] Where M is a positive integer, representing that the layout is divided into M rectangular regions, which can be conveniently used for subsequent test design.

[0114] S502: Design the layout corresponding to each of the third partition images to obtain multiple third test images.

[0115] The third partition image consists of the M rectangular regions previously defined. For each partition image, a corresponding third test image needs to be designed for exposure testing. The third test image is used to simulate and verify the potential effects of each partition image in actual photolithography. The design of the test image typically includes multiple different graphic features (such as different linewidths) to more comprehensively test the performance during the photolithography process.

[0116] In one possible implementation, the key objective of test image design is to achieve a linewidth consistent with the target standard size after exposure. Therefore, in designing the third test image, multiple linewidths need to be selected for testing. These linewidths should start from a range slightly larger or smaller than the target standard size and gradually increase or decrease to cover possible optical errors. For example, if the target standard linewidth is 200nm, then multiple linewidths such as 180nm, 200nm, 220nm, and 240nm can be selected as the linewidths of the test images. Furthermore, the lines in the test images are usually arranged in a grid layout or uniformly distributed to test the interaction between different linewidths and adjacent lines during exposure. The line spacing within each test image must be appropriately selected to ensure that the interaction between lines reflects the optical effects during actual exposure.

[0117] Designing a corresponding test image for each partition image ensures that the test results accurately reflect the actual characteristics of that partition image. By establishing the correspondence between the partition images and the test images, subsequent correction operations can be performed more precisely.

[0118] S503: Based on the position of each of the third partition images in the target layout and the correspondence between the third partition images and the third test images, multiple third test images are stitched together according to their corresponding positions to obtain the test layout.

[0119] In the previous steps, corresponding third test images have been designed for each third zone image. Now, these test images need to be stitched together to form a complete test layout. The purpose of stitching is to ensure that the test layout covers all zones of the entire target layout and reflects the lithographic effect of each area. The stitched test layout will be used for actual exposure experiments to verify the lithographic performance of the entire layout design. Specifically, the corresponding test images can be stitched together according to their actual positions on the target layout to form a complete test layout. The stitched test layout ensures that each zone image is fully tested during actual exposure, simulating the lithographic effect in actual production. Figure 6 As shown, Figure 6 The right image in the figure is the test layout, which includes nine test images with the same area.

[0120] Each of the third test images is a test image.

[0121] Through the above steps, the target map can be systematically divided into 9 equal parts, and corresponding test images can be designed to ultimately generate a complete test map, providing an accurate basis for subsequent exposure and correction.

[0122] In one possible implementation, each test image comprises multiple line graphics with different test sizes, and the difference between each test size and the standard size width is within a certain range.

[0123] In each test image, multiple line patterns are designed, each with a linewidth that differs slightly from the standard size, but these differences are within acceptable error ranges. For example, assuming the standard linewidth is 200nm, patterns with linewidths of 160nm, 180nm, 220nm, and 240nm might be designed within the test image. Furthermore, the difference between the test size and the standard size width does not exceed a set tolerance range (i.e., the difference range), such as ±40nm for the linewidth.

[0124] See Figure 7 , Figure 7 This application provides a flowchart of a method for constructing a correction rule base. Accordingly, step S204 constructs corresponding correction rules for each exposed image based on its exposure size and the standard size, thereby obtaining the correction rule base for the target image. This can be specifically implemented through steps S701-S705.

[0125] S701: Traverse each of the exposed images and obtain all the exposure dimensions within the exposed image.

[0126] This step first requires iterating through each exposure image, which corresponds to different areas in the test layout and will have different linewidths. It's necessary to collect all exposure dimension information within each exposure image. These exposure dimensions represent the linewidth, line end length, concave angle, and convex angle formed during the actual photolithography process.

[0127] For example, suppose there is an exposure image containing three exposure patterns with different linewidths: 224nm, 200nm, and 199nm. This step will record these linewidths.

[0128] S702: In each exposed image, the exposed size that is equal to the standard size among all the exposed sizes is determined as the reference size.

[0129] In each exposed image, it is necessary to identify those exposure dimensions that are equal to the standard dimensions and define these exposure dimensions as reference dimensions. Corresponding to the standard dimensions, the exposure dimensions include the exposure linewidth, the exposure line tip, the exposure concave angle, and the exposure convex angle. Therefore, the reference dimensions include the reference linewidth, the reference line tip, the reference concave angle, and the reference convex angle.

[0130] For example, assuming the standard linewidth is 200nm, the 200nm exposure linewidth collected in the previous step will be determined as the reference linewidth. Assuming the standard line tip shape is a smooth circle, the smooth circle exposure line tip collected in the previous step will be determined as the reference line tip. Assuming the standard concave angle is 90°, the 90° exposure concave angle collected in the previous step will be determined as the reference concave angle. Assuming the standard convex angle size is 45°, the 45° exposure convex angle collected in the previous step will be determined as the reference convex angle.

[0131] S703: The reference size is determined as the corresponding test size in the test image as the correction size.

[0132] In this step, the corresponding test dimension in the test image is found based on the reference dimension. The test dimension refers to the different line widths that are verified in the pre-designed test image. The correction dimensions include correcting the line width, correcting the line end, correcting the concave corner, and correcting the convex corner.

[0133] For example, if the reference linewidth is 200nm, and the corresponding test linewidth in the test area is 180nm, then 180nm is determined as the corrected linewidth.

[0134] S704: Construct a set of correction rules based on the aforementioned correction dimensions.

[0135] Once the calibration dimension is determined, correction rules can be constructed based on it. These correction rules are used to adjust the line graphics in the target layout to match the calibration dimension. This typically involves calculating the required adjustment amount and the specific correction method, such as adjusting the linewidth during the lithography process by adjusting the exposure intensity or exposure time.

[0136] For example, the line pattern of the target layout is corrected based on the corrected line width of 180nm to make the line width of the line pattern of the target layout consistent with the corrected line width of 180nm.

[0137] S705: Summarize each set of correction rules corresponding to all the exposed images to obtain the correction rule library.

[0138] Finally, the correction rules for each of all exposed images are compiled into a correction rule library. This correction rule library will be applied in subsequent photolithography processes to ensure that the exposure results for each region achieve the expected linewidth.

[0139] For example, suppose there are multiple exposure images, and each region generates corresponding correction rules through steps S703 and S704. These correction rules are aggregated into a correction rule library. For instance, exposure image A needs to correct the linewidth to 180nm, the line ends to a smooth rounded shape, the concave corners to 40°, and the convex corners to 85°; while exposure image B needs to correct the linewidth to 220nm, the line ends to a smooth rounded shape, the concave corners to 50°, and the convex corners to 95°. These correction rules are managed uniformly to ensure accurate correction during the photolithography process.

[0140] Through these five steps, the target pattern lines in the photolithography process can be corrected according to the different requirements of the exposed image, thereby ensuring that the corrected line width of each area is consistent with the standard size after exposure.

[0141] See Figure 8 , Figure 8 The flowchart illustrates another method for optical proximity effect correction of a layout provided in this application embodiment. Accordingly, step S205 performs optical proximity effect correction on multiple partition images of the target layout one by one according to the correction rule library of the target layout to obtain a corrected layout. Specifically, this can be implemented through steps S801-S804:

[0142] S801: Traverse each of the partition images of the target map and expand the boundaries of the partition images to obtain extended images.

[0143] Because the test layout is partitioned based on the previous layer or M-level, the boundaries of these partitions typically do not cut into the test layout itself. However, when these test layout partitions are applied to the target layout to be corrected, the boundaries of each partition in the target layout may overlap or intersect with the boundaries of the target graphic, potentially affecting the graphic structure in the target layout. To address this, the boundaries of each partition in the target layout can be extended outwards. For example... Figure 9a As shown, Figure 9a In this context, d represents the outward expansion, and OD represents the optical diameter. Figure 9a The left image in the image is the target map after partitioning, and the right image is a partition image of the target map with its boundaries expanded. The black border in the right image represents the expanded area.

[0144] S802: In the correction rule base, determine the correction rule for the partition image corresponding to the extended image.

[0145] Once the expanded image is determined, it is necessary to search the correction rule base for the correction rules associated with it. This step involves finding the specific correction rules for the corresponding partition image. By matching the expanded image with the correction rules, it is ensured that the appropriate rules are accurately applied when performing optical proximity effect correction, thus achieving precise adjustments.

[0146] S803: Based on the correction rules of the partitioned image corresponding to the extended image, perform optical proximity effect correction on the extended image to obtain the corrected extended image.

[0147] This step is the core of optical proximity effect correction, adjusting the expanded image using the correction rules determined in step S802. After correction, these areas are given appropriate line width variations according to the correction rules to correct geometric errors caused by optical effects. Figure 9b As shown, Figure 9b In this context, d represents the outward expansion, and OD represents the optical diameter. Figure 9b The left image in the image is a partition image of the target map with its boundaries expanded, and the right image is the corrected expanded image. In the right image, red indicates that the line width has been increased, and orange indicates that the line ends have been corrected.

[0148] S804: Based on the expansion size of the boundary, the corrected expanded image is subjected to boundary cutting to obtain the corrected region.

[0149] This step, after correcting for the optical proximity effect in the expanded image, involves boundary cutting based on the size of the expanded boundary to adjust the corrected area back to its original size range. This is to ensure that the corrected area does not exceed the expected range in the actual layout. In other words, after correction, only the image within the area before expansion is retained as the corrected result for that area. Figure 9c As shown, Figure 9c In this context, d represents the outward expansion, and OD represents the optical diameter. Figure 9c The left image in the image is the corrected expanded image, and the right image is the corrected area that was retained after correction.

[0150] Once each of the partition images of the target map is corrected to the corrected region, the target map completes the optical proximity effect correction and obtains the corrected map.

[0151] These four steps are closely related. Through operations such as traversal, matching rules, and region correction, the optical proximity effect of the target layout is gradually corrected to ensure the accuracy and precision of the design, and finally a corrected layout that meets the requirements is generated.

[0152] In one possible implementation, step S801, which involves expanding the boundaries of the partitioned image to obtain an extended image, includes:

[0153] Calculate the optical diameter, and determine an expansion amount based on the optical diameter, wherein the expansion amount is greater than or equal to the optical diameter. Then, expand each edge of the partitioned image based on the expansion amount to obtain the expanded image, such as... Figure 9a As shown.

[0154] Wherein, OD≈k*λ / (NA*(1+σmax))), where k is an estimation factor, which can be taken to be around 20; λ is the wavelength of the lithography machine's light source; NA is the numerical aperture of the lithography machine; and σmax is the maximum outer diameter of the lithography machine's light source.

[0155] See Figure 10 , Figure 10 This is a schematic diagram of the structure of an optical proximity effect correction device for a layout provided in an embodiment of this application. Figure 10 As shown, the optical proximity correction device for this layout includes:

[0156] The partitioning design unit 1001 is used to partition the target layout based on the density of the previous layer layout in the target layout to obtain multiple partition images, and to design a test layout of the target layout based on the multiple partition images of the target layout; the test layout includes multiple test images; the target layout includes multiple line graphics with the same standard size; the standard size includes standard line width, standard line end shape, standard concave corner and standard convex corner;

[0157] The transfer unit 1002 is used to transfer the test pattern onto a mask to obtain a test mask.

[0158] The first determining unit 1003 is used to determine the exposure conditions based on the target layout.

[0159] The exposure unit 1004 is used to perform an exposure operation on the test mask based on the exposure conditions to obtain an exposure pattern; the exposure pattern includes multiple exposure images.

[0160] The rule base construction unit 1005 is used to construct a set of correction rules for each exposed image based on its exposure size and the standard size, so as to obtain the correction rule base of the target image; the correction rule base includes multiple sets of correction rules, and each set of correction rules has a one-to-one correspondence with the exposed image;

[0161] The first correction unit 1006 is used to perform optical proximity effect correction on multiple partition images of the target map according to the correction rule library of the target map to obtain a corrected map.

[0162] In one possible implementation, the partitioning design unit 1001 specifically includes:

[0163] The first partitioning unit, when there are differences in graphic density in the images in the front layer layout, is used to partition the images in the front layer layout with a graphic density greater than a first density threshold into first partition images, and to partition the images in the front layer layout with a graphic density less than a second density threshold into second partition images; the first density threshold is greater than the second density threshold.

[0164] The first design unit is used to design the layouts corresponding to the first partition image and the second partition image respectively, to obtain the first test image and the second test image; the first partition image and the first test image have a corresponding relationship; the second partition image and the second test image have a corresponding relationship;

[0165] The first stitching unit is used to stitch the first test image and the second test image according to their corresponding positions in the target layout based on the positions of the first partition image and the second partition image in the target layout, the correspondence between the first partition image and the first test image, and the correspondence between the second partition image and the second test image, to obtain the test layout.

[0166] Wherein, the first partition image and the second partition image are both partition images; the first test image and the second test image are both test images.

[0167] In one possible implementation, the partition design unit 1001 further includes:

[0168] The second partitioning unit, when there is no difference in graphic density in the images in the previous layer, is used to uniformly divide the target image into M rectangular regions to obtain M third partition images; M is a positive integer;

[0169] The second design unit is used to design the layout corresponding to each of the third partition images to obtain multiple third test images; one third partition image corresponds to one third test image.

[0170] The second stitching unit is used to stitch multiple third test images according to their corresponding positions based on the positions of each of the third partition images in the target layout and the correspondence between the third partition images and the third test images, to obtain the test layout.

[0171] Each of the third test images is a test image.

[0172] In one possible implementation, each of the test images includes multiple line graphics with different test sizes; the difference between each test size and the standard size width is within a certain range.

[0173] In one possible implementation, the rule base construction unit 1005 specifically includes:

[0174] An exposure size acquisition unit is used to traverse each of the exposure images and acquire all exposure sizes within the exposure image;

[0175] The second determining unit is used to determine, in each exposed image, the exposure size that is equal to the standard size among all the exposure sizes as the reference size;

[0176] The third unit is used to determine the reference size as the corresponding test size in the test image as the correction size;

[0177] The correction rule construction unit is used to construct a set of correction rules based on the correction size;

[0178] The summarization unit is used to summarize each set of correction rules corresponding to all the exposure images to obtain the correction rule library; one set of correction rules in the correction rule library corresponds to one exposure image.

[0179] In one possible implementation, the first correction unit 1006 specifically includes:

[0180] The first boundary expansion unit is used to traverse each of the partition images of the target map and expand the boundary of the partition image to obtain an expanded image.

[0181] The fourth determining unit is used to determine the correction rules for the partitioned image corresponding to the extended image in the correction rule base;

[0182] The second correction unit is used to perform optical proximity effect correction on the extended image based on the correction rules of the partition image corresponding to the extended image, so as to obtain the corrected extended image.

[0183] A boundary cutting unit is used to cut the corrected extended image based on the extension size of the boundary expansion to obtain the corrected region;

[0184] Once each of the partition images of the target map is corrected to the corrected region, the target map completes the optical proximity effect correction and obtains the corrected map.

[0185] In one possible implementation, the first boundary expansion unit specifically includes:

[0186] The calculation unit is used to calculate the optical diameter;

[0187] The fifth determining unit is used to determine the outward expansion amount based on the optical diameter; the outward expansion amount is greater than or equal to the optical diameter;

[0188] The second boundary expansion unit is used to expand each edge of the partitioned image based on the expansion amount to obtain the expanded image;

[0189] Wherein, OD≈k*λ / (NA*(1+σmax))), where k is the estimation factor; λ is the wavelength of the lithography machine's light source; NA is the numerical aperture of the lithography machine; and σmax is the maximum outer diameter of the lithography machine's light source.

[0190] In addition, this application embodiment also provides an optical proximity effect correction device for a layout, including: a memory, a processor, and a computer program stored in the memory and executable on the processor. When the processor executes the computer program, it implements the optical proximity effect correction method for the layout as described above.

[0191] In addition, this application embodiment also provides a computer-readable storage medium storing instructions that, when executed on a terminal device, cause the terminal device to perform the optical proximity effect correction method for the layout as described above.

[0192] This application provides an optical proximity effect correction device for a lithography pattern, which can make more accurate corrections based on the characteristics and exposure conditions of different regions of the lithography pattern, effectively improving the accuracy and adaptability of the lithography process, and is especially suitable for more complex lithography patterns and situations where the exposure conditions of different regions vary greatly.

[0193] The foregoing has provided a detailed description of a method and related apparatus for correcting the optical proximity effect of a layout. The various embodiments in the specification are described in a progressive manner, with each embodiment focusing on its differences from other embodiments. Similar or identical parts between embodiments can be referred to interchangeably. For the apparatus disclosed in the embodiments, since it corresponds to the method disclosed in the embodiments, the description is relatively simple; relevant parts can be referred to in the method section. It should be noted that those skilled in the art can make several improvements and modifications to this application without departing from the principles of this application, and these improvements and modifications also fall within the protection scope of the claims of this application.

[0194] It should be understood that in this application, "at least one (item)" means one or more, and "more than" means two or more. "And / or" is used to describe the relationship between related objects, indicating that three relationships can exist. For example, "A and / or B" can represent three cases: only A exists, only B exists, and both A and B exist simultaneously, where A and B can be singular or plural. The character " / " generally indicates that the preceding and following related objects are in an "or" relationship. "At least one (item) of the following" or similar expressions refer to any combination of these items, including any combination of single or plural items. For example, at least one (item) of a, b, or c can represent: a, b, c, "a and b", "a and c", "b and c", or "a and b and c", where a, b, and c can be single or multiple.

[0195] It should also be noted that, in this document, relational terms such as "first" and "second" are used only to distinguish one entity or operation from another, and do not necessarily require or imply any such actual relationship or order between these entities or operations. Furthermore, the terms "comprising," "including," or any other variations thereof are intended to cover non-exclusive inclusion, such that a process, method, article, or apparatus that comprises a list of elements includes not only those elements but also other elements not expressly listed, or elements inherent to such a process, method, article, or apparatus. Without further limitations, an element defined by the phrase "comprising one..." does not exclude the presence of other identical elements in the process, method, article, or apparatus that includes said element.

Claims

1. A method for correcting the optical proximity effect in a layout, characterized in that, The method includes: The target layout is partitioned based on the density of the previous layer layout to obtain multiple partition images. A test layout of the target layout is designed based on the multiple partition images. The test layout includes multiple test images. The target layout includes multiple line graphics with the same standard size. The standard size includes standard line width, standard line end shape, standard concave corner, and standard convex corner. The test pattern is transferred onto a mask to obtain a test mask, and the exposure conditions are determined based on the target pattern. An exposure pattern is obtained by performing an exposure operation on the test mask based on the exposure conditions; the exposure pattern includes multiple exposure images. For each of the exposed images, a set of correction rules is constructed based on its exposure size and the standard size to obtain the correction rule library of the target image; the correction rule library includes multiple sets of correction rules, and each set of correction rules has a one-to-one correspondence with the exposed image; Based on the correction rule base of the target map, optical proximity effect correction is performed on each of the multiple partition images of the target map to obtain the corrected map.

2. The method according to claim 1, characterized in that, The step of partitioning the target layout based on the density of the previous layer layout in the target layout to obtain multiple partition images, and designing a test layout of the target layout based on the multiple partition images of the target layout, includes: When there are differences in graphic density among the images in the front layer layout, the images in the front layer layout with a graphic density greater than a first density threshold are divided into first partition images, and the images in the front layer layout with a graphic density less than a second density threshold are divided into second partition images; the first density threshold is greater than the second density threshold. The layouts corresponding to the first partition image and the second partition image are designed respectively to obtain the first test image and the second test image; the first partition image and the first test image have a corresponding relationship; the second partition image and the second test image have a corresponding relationship. Based on the positions of the first partition image and the second partition image in the target layout, the correspondence between the first partition image and the first test image, and the correspondence between the second partition image and the second test image, the first test image and the second test image are stitched together according to their corresponding positions to obtain the test layout. Wherein, the first partition image and the second partition image are both partition images; the first test image and the second test image are both test images.

3. The method according to claim 1, characterized in that, The step of partitioning the target layout to obtain multiple partition images, and designing a test layout of the target layout based on the multiple partition images of the target layout, further includes: When there is no difference in graphic density in the image of the previous layer, the target image is uniformly divided into M rectangular regions to obtain M third partition images; M is a positive integer; Design the layout corresponding to each of the third partition images to obtain multiple third test images; one third partition image corresponds to one third test image. Based on the position of each of the third partition images in the target layout, and the correspondence between the third partition images and the third test images, multiple third test images are stitched together according to their corresponding positions to obtain the test layout; Each of the third test images is a test image.

4. The method according to claim 1, characterized in that, Each of the test images includes multiple line graphics with different test sizes; the difference between the width of each test size and the standard size is within a certain range. The step of constructing corresponding correction rules for each exposed image based on its exposure size and the standard size to obtain the correction rule library for the target layout includes: Iterate through each of the exposed images to obtain all the exposure dimensions within the exposed image; In each exposed image, the exposed size that is equal to the standard size among all the exposed sizes is determined as the reference size; The reference size is determined as the correction size corresponding to the test size in the test image; A set of correction rules is constructed based on the aforementioned correction dimensions; The correction rules corresponding to all the exposure images are summarized to obtain the correction rule library; one set of correction rules in the correction rule library corresponds to one exposure image.

5. The method according to claim 1, characterized in that, The step of performing optical proximity effect correction on multiple partition images of the target map one by one according to the correction rule base of the target map to obtain the corrected map includes: Traverse each partition image of the target map and expand the boundaries of the partition images to obtain extended images; In the correction rule base, the correction rules for the partitioned image corresponding to the extended image are determined; Based on the correction rules of the partitioned image corresponding to the extended image, the extended image is corrected for optical proximity effect to obtain the corrected extended image; Based on the expansion size of the boundary, the corrected expanded image is subjected to boundary cutting to obtain the corrected region; Once each of the partition images of the target map is corrected to the corrected region, the target map completes the optical proximity effect correction and obtains the corrected map.

6. The method according to claim 5, characterized in that, The step of expanding the boundaries of the partitioned image to obtain an extended image includes: Calculate the optical diameter, and determine the outward expansion amount based on the optical diameter; the outward expansion amount is greater than or equal to the optical diameter. The expanded image is obtained by expanding each edge of the partitioned image based on the expansion amount; Wherein, OD≈k*λ / (NA*(1+σmax))), where k is the estimation factor; λ is the wavelength of the lithography machine's light source; NA is the numerical aperture of the lithography machine; and σmax is the maximum outer diameter of the lithography machine's light source.

7. An optical proximity effect correction device for a layout, characterized in that, The device includes: A partitioning design unit is used to partition the target layout based on the density of the previous layer layout in the target layout to obtain multiple partition images, and to design a test layout of the target layout based on the multiple partition images of the target layout; the test layout includes multiple test images; the target layout includes multiple line graphics with the same standard size; the standard size includes standard line width, standard line end shape, standard concave corner and standard convex corner; A transfer unit is used to transfer the test pattern onto a mask to obtain a test mask. The first determining unit is used to determine the exposure conditions based on the target layout. An exposure unit is used to perform an exposure operation on the test mask based on the exposure conditions to obtain an exposure pattern; the exposure pattern includes multiple exposure images. The rule base construction unit is used to construct a set of correction rules for each exposed image based on its exposure size and the standard size, so as to obtain the correction rule base of the target image; the correction rule base includes multiple sets of correction rules, and each set of correction rules has a one-to-one correspondence with the exposed image; The first correction unit is used to perform optical proximity effect correction on multiple partition images of the target map according to the correction rule library of the target map to obtain a corrected map.

8. The apparatus according to claim 7, characterized in that, The first correction unit specifically includes: The first boundary expansion unit is used to traverse each of the partition images of the target map and expand the boundary of the partition image to obtain an expanded image. The fourth determining unit is used to determine the correction rules for the partitioned image corresponding to the extended image in the correction rule base; The second correction unit is used to perform optical proximity effect correction on the extended image based on the correction rules of the partition image corresponding to the extended image, so as to obtain the corrected extended image. A boundary cutting unit is used to cut the corrected extended image based on the extension size of the boundary expansion to obtain the corrected region; Once each of the partition images of the target map is corrected to the corrected region, the target map completes the optical proximity effect correction and obtains the corrected map.

9. An optical proximity effect correction device for a layout, characterized in that, include: A memory, a processor, and a computer program stored in the memory and executable on the processor, wherein the processor, when executing the computer program, implements the optical proximity effect correction method for a layout as described in any one of claims 1-6.

10. A computer-readable storage medium, characterized in that, The computer-readable storage medium stores instructions that, when executed on a terminal device, cause the terminal device to perform the optical proximity effect correction method for a layout as described in any one of claims 1-6.

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