Method for forming wiring film

Abstract

The present application provides a method for forming a wiring film (Wi) on an organic insulating film (Oi) with high efficiency while preventing residue from remaining. The wiring film (Wi) includes a first barrier metal film (Bm1) covering an organic insulating film (Oi) formed by a coating method, and a second barrier metal film (Bm2) covering an aluminum-based metal film (Am) formed on the first barrier metal film (Bm1). The method includes a first process of forming the first barrier metal film (Bm1) by a sputtering method, and a second process of forming the second barrier metal film (Bm2) by a sputtering method. The power density when power is applied to a target (21) in the first process is set to be higher than that in the second process.

Description

Technical Field

[0001] This invention relates to a method for forming a wiring film on an organic insulating film formed by a coating method. Background Technology

[0002] In recent years, organic insulating films formed by coating have been widely used as interlayer insulating films for wiring films due to their advantages in manufacturing cost control, ease of achieving thick film formation, and reduction of parasitic capacitance. One known method for forming wiring films on such organic insulating films is the method described in Patent Document 1. This method includes a first barrier metal film (titanium film) covering the organic insulating film and a second barrier metal film (titanium film) covering an aluminum-based metal film (aluminum film) formed on the first barrier metal film. It comprises a first step of forming the first barrier metal film by sputtering and a second step of forming the second barrier metal film by sputtering. Then, after forming a resist layer with a predetermined wiring pattern patterned using known photolithography on the formed wiring film, the resist layer is used as a mask to dry etch the wiring film, thereby patterning the wiring film on the organic insulating film. Furthermore, dry etching is used in this case because of its excellent anisotropy and ability to form fine patterns.

[0003] Here, the organic insulating film formed by coating contains a large number of gas molecules such as oxygen or water vapor (hereinafter referred to as "molecules in the film, etc."), and sometimes moisture (hereinafter referred to as "attached molecules, etc.") adheres to the surface of the organic insulating film before the wiring film is formed. Due to the presence of such attached molecules or molecules in the film, aluminum oxide (AlOx) is sometimes generated on the organic insulating film when forming an aluminum-based metal film. Furthermore, even if a first barrier metal film (titanium film) is formed between the organic insulating film and the aluminum-based metal film, aluminum oxide is sometimes generated during the sputtering formation of the aluminum-based metal film or during the dry etching process for patterning the wiring film due to the presence of attached molecules or molecules in the film. Compared to aluminum, the etching rate of aluminum oxide is very slow (about 1 / 10). Therefore, sometimes residues composed of aluminum oxide remain on the surface of the organic insulating film after the wiring pattern is formed, and these residues degrade device performance. In such cases, it is possible to heat the organic insulating film in a vacuum or nitrogen atmosphere before the formation of the wiring film, so that the attached molecules or molecules in the film are released from the surface of the organic insulating film (degassing). However, since the molecules in the film diffuse during heating, it is not easy to degas from the surface of the organic insulating film. Moreover, since the organic insulating film needs to be heated at a temperature that does not cause thermal degradation, the degassing process requires a lot of time, which reduces productivity.

[0004] Existing technical documents Patent documents [Patent Document 1] Japanese Patent No. 7627822 Summary of the Invention The technical problem that the invention aims to solve In view of the above-mentioned problems, the present invention addresses the technical problem of providing a method for forming a wiring film that can minimize residue residue and efficiently form a wiring film on an organic insulating film.

[0005] means of solving technical problems To solve the above-mentioned technical problems, the present invention provides a method for forming a wiring film on an organic insulating film formed by coating. The wiring film includes a first barrier metal film covering the organic insulating film and a second barrier metal film covering an aluminum-based metal film formed on the first barrier metal film. The method has a first step of forming the first barrier metal film by sputtering and a second step of forming the second barrier metal film by sputtering. The method is characterized in that the power density when applying electricity to the target in the first step is higher than that in the second step.

[0006] Here, in this invention, for example, when sputtering a target using a magnetron, if the product used consists of a central magnet in one direction (which acts as a magnet unit that causes a leakage magnetic field to act on the target) and peripheral magnets with different polarities surrounding the central magnet with gaps, the "power density" is calculated (kW / m) by dividing the applied power to the target by the sum of the lengths of the magnet units across one direction. Normally, the "power density" is calculated based on the applied power to the target and the area of ​​the sputtering surface of the target. However, in the case described above using a magnetron and in which the magnet unit reciprocates relative to the target in a direction orthogonal to one direction during film deposition, the area of ​​the sputtering surface becomes relatively large, and therefore, if calculated in the usual way, the power density may become too small.

[0007] According to the present invention, during the sputtering of the target in the first step, the power density (kW / m) is set higher than that in the second step (the film formation step under normal sputtering conditions) while considering the film formation rate of the first barrier metal film and the uniformity of the in-plane distribution of the film thickness. This increases the number of sputtered particles with high energy that collide with the organic insulating film. This not only promotes the attachment of molecules, but also promotes the release of molecules from the surface of the organic insulating film. In other words, the formation of the first barrier metal film and the release of molecules from the surface of the organic insulating film are carried out simultaneously in the first step. This minimizes residue residue and allows for efficient formation of a wiring film on the organic insulating film. Furthermore, it is advantageous that the wiring film formation method of the present invention does not require additional equipment in a vacuum chamber.

[0008] Furthermore, in order to solve the above-mentioned technical problems, the present invention provides a method for forming a wiring film on an organic insulating film formed by coating, which includes a first barrier metal film covering the organic insulating film and an aluminum-based metal film formed on the first barrier metal film. The method has a first step of forming the first barrier metal film by sputtering. The method is characterized in that, when the target for forming the first barrier metal film by sputtering is made of titanium, the power density when applying electricity to the target is set to 7.5 kW / m or more.

[0009] Furthermore, in order to solve the above-mentioned technical problems, the present invention provides a method for forming a wiring film on an organic insulating film formed by coating, characterized in that: it includes a first barrier metal film covering the organic insulating film and an aluminum-based metal film formed on the first barrier metal film, and has a first step of forming the first barrier metal film by sputtering, wherein when the target for forming the first barrier metal film by sputtering is made of titanium, the deposition rate of titanium on the organic insulating film is 150 nm / min or more.

[0010] According to the present invention, when the target for forming the first barrier metal film by sputtering is made of titanium, by making the power density when applying electricity to the target 7.5 kW / m or more, or making the deposition rate of titanium on the organic insulating film 150 nm / min or more, the number of sputtered particles with high energy that collide with the organic insulating film can be increased, and residue residue can be prevented as much as possible.

[0011] In this invention, when the power density during the formation of the first barrier metal film is set to 7.5 kW / m or more, or the deposition rate of titanium is set to 150 nm / min or more, and the wiring film further includes a second barrier metal film covering an aluminum-based metal film, and when a second step of forming the second barrier metal film by sputtering is also included, the power density during the application of electricity to the target in the first step can be set to be higher than that in the second step.

[0012] Furthermore, in this invention, it is preferable to include a step of preheating the organic insulating film in a vacuum atmosphere before the first step. This preheating releases adhering molecules and the like from the surface of the organic insulating film, thus more effectively preventing residue buildup. Attached Figure Description

[0013] Figure 1 (a) is a cross-sectional schematic diagram of a wiring film formed by the wiring film forming method of the present invention, and (b) is a cross-sectional schematic diagram showing the wiring film in a patterned state.

[0014] Figure 2 This is a top view schematic diagram of the vacuum processing apparatus used in the wiring film formation method according to an embodiment of the present invention.

[0015] Figure 3 yes Figure 2 A cross-sectional schematic diagram of the vacuum processing apparatus, (a) showing the state of the film-forming object before the first process, and (b) showing the state of the film-forming object during the first process.

[0016] Figure 4 It is set in Figure 2 A front view schematic diagram of the magnet unit on the cathode unit shown.

[0017] Figure 5 (a) and (c) are SEM images illustrating the effects of the present invention, and (b) is a SEM image illustrating the results of a comparative experiment.

[0018] Figure 6 This is a top view schematic diagram of the cathode unit of the wiring film formation method applicable to embodiments of the present invention. Detailed Implementation

[0019] Referring to the accompanying drawings, taking the case of forming an aluminum-based metal wiring film Wi on an organic insulating film Oi formed on one side surface of a glass substrate (hereinafter referred to as "substrate Gs") as an example, the wiring film formed by the wiring film formation method according to the embodiment of the present invention and the method thereof will be described.

[0020] Reference Figure 1 The organic insulating film Oi, for example, is an organic resin film such as acrylic resin or polyimide resin, and is formed on one side surface of the substrate Gs by a so-called coating method. Since the coating method itself is well known, a detailed description is omitted here. The wiring film Wi has a laminated structure consisting of a first barrier metal film Bm1 covering the organic insulating film Oi, an aluminum-based metal film Am formed on the first barrier metal film Bm1, and a second barrier metal film Bm2 covering the aluminum-based metal film Am (see reference). Figure 1 (a)). The first barrier metal film Bm1 and the second barrier metal film Bm2 are, for example, metal films or metal nitride films formed from metals such as Ti, Ta, Mo, W, and their metal nitrides (TiN, TaN), and are formed by sputtering using targets made of the aforementioned metal materials or metal nitrides. The film thicknesses of the first and second barrier metal films Bm1 and Bm2 are respectively set in the range of 10 nm to 100 nm. In this embodiment, the first barrier metal film Bm1 and the second barrier metal film Bm2 are formed using the same Ti material target.

[0021] The aluminum-based metal film Am, in addition to aluminum (Al) of a specified purity, is composed of Al-Si alloys, Al-Ti alloys, Al-Cu alloys, and Al-Si-Cu alloys, in which silicon (Si), titanium (Ti), and copper (Cu) are respectively added to aluminum (Al). These are formed by sputtering using targets made of the aforementioned metal materials. The thickness of the aluminum-based metal film Am is set in the range of 100 nm to 1000 nm. After the first barrier metal film Bm1, the aluminum-based metal film Am, and the second barrier metal film Bm2 are formed sequentially, a resist layer Rt with a specified wiring pattern patterned by photolithography is formed on the surface of the second barrier metal film Bm2. By using this resist layer Rt as a mask, the wiring film Wi is dry-etched, and the wiring film Wi is patterned and formed on the organic insulating film Oi (see reference). Figure 1 (b) The method for forming the resist layer Rt or the dry etching method for the wiring film Wi (e.g., dry etching using CCP discharge or ICP discharge with chlorine gas (Cl2) or boron trichloride gas (BCl3)) is known, so detailed descriptions are omitted here. Furthermore, in order to always form the first barrier metal film Bm1, the aluminum-based metal film Am, and the second barrier metal film Bm2 in a vacuum atmosphere, a cluster tool type vacuum processing apparatus is used.

[0022] Reference Figures 2-4 The vacuum processing apparatus includes a hexagonal transport chamber Tc, which houses a vacuum transport robot Tr inside. Surrounding the transport chamber Tc, which creates a vacuum atmosphere, are a load-locking chamber Lc, a first film-forming chamber Pc1 for forming first and second barrier metal films Bm1 and Bm2 by sputtering, and a second film-forming chamber Pc2 for forming an aluminum-based metal film Am by sputtering. Although not specifically illustrated, the load-locking chamber Lc is connected to an exhaust pipe from a vacuum pump and a permeable gas pipe for introducing permeable gas, allowing the load-locking chamber Lc to switch between atmospheric and vacuum atmospheres. Hereinafter, the material on which the organic insulating film Oi is formed on one side surface of the substrate Gs will be referred to as the "film-forming object Sb".

[0023] A stage St on which the film-forming target Sb is placed is provided in the load-locking chamber Lc, and a heater Ht is arranged opposite to the stage St. The heater Ht, for example, is a lamp-type heater, which can heat the film-forming target Sb on the stage St to a specified temperature (e.g., a temperature range of 40°C to 300°C) in the vacuum atmosphere of the load-locking chamber Lc. On the other hand, the first and second film-forming chambers Pc1 and Pc2 have the same structure except for the type of target. Taking the first film-forming chamber Pc1 as an example, the first film-forming chamber Pc1 is divided into two chambers by a partition (…). Figure 3(a) In the first chamber 1a located on the side of the transport chamber Tc, the substrate stage 3 holding the film-forming object Sb is configured to be in a transport posture by rotating the rotation axis to feed the film-forming object Sb into and out of the transport chamber Tc. Figure 3 (b) as shown by the double-dotted line) and the film formation posture for forming a film on the object Sb. Figure 3 (b) indicates free movement between the solid lines. Although not specifically illustrated, an electrostatic chuck is provided on the holding surface of the substrate stage 3, which can electrostatically adsorb the film-forming object Sb.

[0024] A cathode unit 2 is disposed in the second chamber 1b, facing the film-forming object Sb when the substrate stage 3 is moved to the film-forming posture. The cathode unit 2 has a plurality of cylindrical targets 21 arranged side by side (eight in this embodiment), and a magnet unit 22 is assembled in the inner space of each target 21 to apply a leakage magnetic field to each target 21. Each magnet unit 22 has the same shape and is composed of a central magnet 22b and peripheral magnets 22c. The central magnet 22b is arranged on one side of a support plate 22a (yoke) made of a flat plate of magnetic material, extending along the length direction (generic direction) of the target 21. The peripheral magnets 22c are arranged to surround the central magnet 22b with a gap between them, and the polarities on the target 21 side are different. In this case, the length L of the peripheral magnets 22c of a single magnet unit 22 assembled in the target 21 is the sum of the lengths of the entire length of one direction across the magnet unit 22 (refer to...). Figure 4 ).

[0025] Furthermore, the output cable from the sputtering power supply is connected to each target 21, enabling the application of negatively charged DC power. Considering the pressure (Pa) within each film-forming chamber Pc1 and Pc2 during film formation, the magnetic field strength of the leakage magnetic field, the dispersion distribution of sputtered particles according to a predetermined cosine law, and the in-plane uniformity of the film thickness on the film-forming object Sb, the power density (the value obtained by dividing the applied power to the target 21 by the total length L across the magnet unit 22 in one direction (kW / m)) is set to, for example, a range of 1kW / m to 25kW / m. Although not specifically illustrated, exhaust pipes from a vacuum pump are connected to the first chamber 1a and the second chamber 1b, enabling the formation of a vacuum atmosphere at a predetermined pressure within them. Furthermore, a gas inlet pipe (not shown) is connected to the second chamber 1b, allowing the introduction of sputtering gas (e.g., rare gases such as argon, or reactive gases used in reactive sputtering) with controlled flow rate. The method for forming a wiring film Wi on the film-forming object Sb using the aforementioned vacuum processing apparatus will be described in detail below.

[0026] In a load-locking chamber Lc with atmospheric atmosphere, the film-forming object Sb is placed on a stand St with its organic insulating film Oi facing upwards. The vacuum in the load-locking chamber Lc is then evacuated to a specified pressure (e.g., 1 Pa) using a vacuum pump (not shown). (Refer to...) Figure 3 (a) Simultaneously, the heater Ht is operated, and the film-forming object Sb is heated at a specified temperature (e.g., below 100°C) for a specified time (i.e., preheating the organic insulating film Oi in a vacuum atmosphere before the first process mentioned later). At this time, the heating temperature and heating time are appropriately adjusted according to the heat resistance temperature of the organic insulating film Oi (the heat resistance temperature of the substrate layer, etc., if there is a substrate layer on the organic insulating film Oi). At this time, the transport chamber Tc and the first and second film-forming chambers Pc1 and Pc2 are evacuated to a specified pressure. Then, the gate valves Gv1 and Gv2 are opened, and the film-forming object Sb in the load locking chamber Lc is transported to the first film-forming chamber Pc1 and handed over to the substrate stage 3 using the vacuum transport robot Tr. Figure 3 (a) shows the film-forming object Sb as indicated by the double-dotted line.

[0027] When gate valves Gv1 and Gv2 are closed, the substrate stage 3 is moved to change to a film-forming posture while the film-forming target Sb is electrostatically adsorbed onto the substrate stage 3. At this time, the first chamber 1a and the second chamber 1b are isolated from each other. Sputtering gas is introduced in this state, and power is applied to each target 21 through the sputtering power supply. Plasma is then formed in the space between each target 21 rotating at a certain speed and the film-forming target Sb. Sputtered particles scattered from each target 21 adhere to and accumulate on the surface of the film-forming target Sb (i.e., the surface of the organic insulating film Oi of the film-forming target Sb), forming a titanium film as the first barrier metal film Bm1 with a specified film thickness (first step).

[0028] Here, when the organic insulating film Oi is preheated using the load-locking chamber Lc, although the moisture or oxygen (adhered molecules, etc.) adsorbed on the surface of the organic insulating film Oi can be released in advance, the moisture or oxygen (molecules in the film, etc.) in the organic insulating film Oi will diffuse and are not easily degassed from the surface. Therefore, it is preferable that the molecules in the film can be effectively released from the surface of the organic insulating film Oi in the first step. In this embodiment, the sputtering conditions other than the applied power applied to the target 21 are not changed in the first step, but the applied power is set to a power density of 7.5 kW / m or more and the deposition rate (sputtering rate) of titanium on the organic insulating film Oi is 150 nm / min or more (in other words, it is set to be higher than the power density or sputtering rate when applying power to each target 21 in the second step (i.e., the film formation step based on normal sputtering conditions) mentioned later). When the power density is changed in this way, the scattering distribution of sputtered particles will change, and the thickness of the first barrier metal film Bm1 will also become thinner, for example, 30 nm. Therefore, it may be impossible to deposit a titanium film on the entire surface of the organic insulating film Oi. Thus, it has been confirmed that if the power density or sputtering rate is set as described above, the release of molecules from the surface of the organic insulating film can be effectively promoted, and the first barrier metal film Bm1 can be formed on the entire surface.

[0029] When the first process is completed, the substrate stage 3 is returned to the transport position, and the adsorption-desorbed film-forming object Sb is transported to the second film-forming chamber Pc2 using a vacuum transport robot Tr, and the film-forming object Sb is placed on the substrate stage 3. Then, following the same sequence as above, the target 21 is sputtered to form an aluminum film as an aluminum-based metal film Am on the surface of the first barrier metal film Bm1 with a predetermined film thickness. Next, when the aluminum-based metal film Am is formed, the film-forming object Sb is transported to the first film-forming chamber Pc1 in the same sequence as above, and the film-forming object Sb is placed on the substrate stage 3. Then, following the same sequence as above, the target 21 is sputtered to form a titanium film as a second barrier metal film Bm2 on the surface of the aluminum-based metal film Am with a predetermined film thickness (second process). Furthermore, the power density (kW / m) of the second process is set to approximately 2 kW / m, and the deposition rate is approximately 40 nm / min.

[0030] After the second process, the substrate Gs, on which the wiring film Wi has been formed on the organic insulating film Oi, is transported to the vacuum processing chamber (not shown) arranged alongside the transport chamber Tc in the same order as described above. A resist layer Rt with a predetermined wiring pattern patterned by photolithography is formed on the second barrier metal film Bm2 of the wiring film Wi. Then, the wiring film Wi is patterned onto the organic insulating film Oi by dry etching using the resist layer Rt as a mask.

[0031] By employing the above method, by setting the power density of the sputtering target 21 in the first step to be higher than that in the second step, the number of sputtered particles with high energy that collide with the organic insulating film Oi is increased. This not only promotes the attachment of molecules but also promotes the release of molecules from the surface of the organic insulating film Oi. In other words, in the first step, the formation of the first barrier metal film Bm1 and the release of molecules from the surface of the organic insulating film Oi are simultaneously carried out. Therefore, residue residue can be minimized while productively forming the wiring film Wi on the organic insulating film Oi. Furthermore, before the first step, a step of preheating the organic insulating film Oi in a vacuum atmosphere is included. By preheating to release the attached molecules from the surface of the organic insulating film Oi, residue residue can be more effectively suppressed.

[0032] To confirm the above effects, the following experiments were conducted using the aforementioned vacuum processing apparatus. In Invention Experiment 1, eight cylindrical targets 21 made of titanium were arranged in the first film-forming chamber Pc1, and eight cylindrical targets 21 made of aluminum were arranged in the second film-forming chamber Pc2. The total length L of each magnet unit 22 across one direction was set to 2.3 m. Furthermore, the product of forming a 2000 nm organic insulating film Oi (acrylic film) on a 1500 mm × 1850 mm glass substrate Gs by coating was used as the film-forming object Sb. The DC power applied to each of the titanium targets 21 was set to 17.3 kW (138 kW for all eight targets), and the power density was 7.5 kW / m (the power applied to each target 21 divided by the total length L across one direction of the magnet unit 22). A first barrier metal film Bm1 (titanium film) with a film thickness of 30 nm was formed (first step). The deposition rate of titanium on the organic insulating film Oi in the first step was 150 nm / min. Subsequently, a specified DC power was applied to each aluminum target 21 to form an aluminum-based metal film Am (aluminum film) with a thickness of 700 nm. Then, a DC power of 4.6 kW (36.8 kW total for 8 targets) was applied to each titanium target 21, with a power density of 2 kW / m, to form a second barrier metal film Bm2 (titanium film) with a thickness of 30 nm (second process), thus forming the wiring film Wi. Furthermore, the substrate Sb was not preheated before the first process, and the pressure in the first and second film-forming chambers Pc1 and Pc2 was set to 0.3 Pa. Then, a resist layer Rt with a wiring pattern was formed on the wiring film Wi. Using this resist layer Rt as a mask, the wiring film Wi was dry-etched, patterning the wiring film Wi onto the organic insulating film Oi. Figure 5 (a) is a SEM image of the patterned organic insulating film Oi surface, and the area ratio of residue analyzed based on this SEM image is 0.7%. Through Experiment 1 of this invention, compared with the comparative experiment mentioned later, it can be confirmed that the residue is reduced.

[0033] In the comparative experiment compared with the above-mentioned Experiment 1, except that in the first step, a DC power of 4.6 kW (36.8 kW for 8 targets) was applied to each of the titanium targets 21, and the power density was set to 2 kW / m, the wiring film Wi was formed using the same method as in Experiment 1, and the wiring film Wi was patterned onto the organic insulating film Oi. Furthermore, the deposition rate of titanium on the organic insulating film Oi in the first step was 40 nm / min. Figure 5 (b) is a SEM image of the patterned organic insulating film Oi, and the area ratio of the residue analyzed based on this SEM image is 7.6%. Next, in Invention Experiment 2, except that the film-forming object Sb was heated at 80°C for 1 minute in a load-locking chamber Lc under a vacuum atmosphere before the first step, a wiring film Wi was formed using the same method as in Invention Experiment 1 above, so that the wiring film Wi was patterned onto the organic insulating film Oi. Figure 5 (c) is a SEM image of the patterned organic insulating film Oi surface, and the area ratio of residue analyzed based on this SEM image is less than 0.1%. Through this invention experiment 2, compared with invention experiment 1, it can be confirmed that the residue is further reduced.

[0034] The embodiments of the present invention have been described above, but the present invention is not limited to the above-described embodiments, and appropriate modifications can be made without departing from the technical concept of the present invention. In the above embodiments, the case of using a so-called bundled tool type vacuum processing apparatus was described as an example, but the wiring film formation method of the present invention can also be applied to a so-called inline vacuum processing apparatus in which the film-forming object is conveyed while film is being formed.

[0035] Furthermore, in the above embodiment, the case of having a so-called rotating cathode unit 2 was described as an example, but the wiring film formation method of the present invention can also be applied to the case of having a so-called planar cathode unit. Furthermore, for example, Figure 6 As shown, a planar cathode unit has multiple cathodes of the same shape arranged relative to a single target 121. Figure 6 In the case of nine magnet units 1221-1229, the total length L (L×9) of the peripheral magnets 122c surrounding the central magnet 122b of each magnet unit 1221-1229 is the sum of the lengths in one direction across the magnet unit. In this case, the power density is calculated by dividing the applied power to the target 121 by the sum of the lengths in one direction across the magnet unit (L×9). On the other hand, in the case of a planar cathode unit with multiple targets and magnet units provided on each target, the same as in the above embodiment, the length in the longitudinal direction of the peripheral magnets of a magnet unit provided on the target is the sum of the lengths in one direction across the magnet unit.

[0036] Furthermore, in the above embodiment, the case in which the organic insulating film Oi is preheated in a load locking chamber Lc in a vacuum atmosphere before the first process is described as an example, but this preheating may also be omitted.

[0037] Explanation of reference numerals in the attached figures Am. Aluminum-based metal film, Bm1. First barrier metal film, Bm2. Second barrier metal film, Oi. Organic insulating film, Wi. Wiring film, 21. Target.

Claims

1. A method for forming a wiring film on an organic insulating film formed by coating, the wiring film comprising a first barrier metal film covering the organic insulating film and a second barrier metal film covering an aluminum-based metal film formed on the first barrier metal film, the method comprising a first step of forming the first barrier metal film by sputtering and a second step of forming the second barrier metal film by sputtering, characterized in that: The power density when applying electricity to the target in the first process is higher than that in the second process.

2. A method for forming a wiring film on an organic insulating film formed by coating, comprising a first barrier metal film covering the organic insulating film and an aluminum-based metal film formed on the first barrier metal film, the method comprising a first step of forming the first barrier metal film by sputtering, characterized in that: When the target for forming the first barrier metal film by sputtering is made of titanium, the power density when applying electricity to the target is set to 7.5 kW / m or higher.

3. A method for forming a wiring film on an organic insulating film formed by coating, comprising a first barrier metal film covering the organic insulating film and an aluminum-based metal film formed on the first barrier metal film, wherein the method includes a first step of forming the first barrier metal film by sputtering, characterized in that: When the target for forming the first barrier metal film by sputtering is made of titanium, the deposition rate of titanium on the organic insulating film is set to be 150 nm / min or higher.

4. The method for forming a wiring film according to claim 2, characterized in that: The wiring film further includes a second barrier metal film covering the aluminum-based metal film, and the forming method further includes a second step of forming the second barrier metal film by sputtering. The power density is set to be higher in the first process than in the second process.

5. The method for forming a wiring film according to claim 3, characterized in that: The wiring film further includes a second barrier metal film covering the aluminum-based metal film, and the forming method further includes a second step of forming the second barrier metal film by sputtering. The power density when applying electricity to the target is set to be higher in the first process than in the second process.

6. The method for forming a wiring film according to any one of claims 1 to 5, characterized in that: Prior to the first step, there is also a step of preheating the organic insulating film in a vacuum atmosphere.

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