Transistor drive circuit and electronic device

Abstract

The application provides a transistor driving circuit and an electronic device. A first input end and a second input end of a boosting module are connected with a direct current source. The boosting module is used for boosting conversion of a first direct current voltage to obtain a second direct current voltage at a first output end and a third direct current voltage at a second output end. The second direct current voltage is greater than the third direct current voltage. One end of a first gating module is connected with the first output end. The other end of the first gating module is used for being connected with a transistor to be driven. One end of a second gating module is connected with a connection point between the other end of the first gating module and the transistor to be driven. The other end of the second gating module is connected with the second output end. The first gating module and the second gating module are used for cooperating to output the second direct current voltage or the third direct current voltage to the transistor to be driven, so as to make the transistor to be driven open or off. The application can meet different driving voltages required by new transistor opening and off.

Description

Technical Field

[0001] This application relates to the field of transistor driving technology, and in particular to a transistor driving circuit and an electronic device. Background Technology

[0002] Transistor driver circuits are widely used in electronic devices such as power converters, motor controllers, and communication equipment to control the switching on and off of power transistors. With the increasing prevalence of new wide-bandgap semiconductor devices such as gallium nitride (GaN) field-effect transistors in high-frequency, high-power-density applications, more stringent requirements are being placed on driver circuits. GaN devices have a narrow gate drive voltage range and typically require a negative or zero voltage to ensure reliable turn-off and prevent false turn-on due to gate voltage fluctuations.

[0003] Traditional driver circuits typically require multiple independent power supplies, such as generating positive voltages to turn on devices and negative or zero voltages to turn off devices. This results in complex circuit structures, a large number of components, and high costs. Furthermore, the coordination and control between multiple power supplies increases the design difficulty. Therefore, simplifying the topology of driver circuits while providing different drive voltages required for the turn-on and turn-off of new transistors has become a pressing technical problem. Summary of the Invention

[0004] This application provides a transistor driving circuit and an electronic device that can meet the different driving voltages required for the turn-on and turn-off of novel transistors.

[0005] In a first aspect, a transistor driving circuit is provided, comprising a DC source, a boost module, a first gating module, and a second gating module connected in sequence. The DC source outputs a first DC voltage. The boost module includes a first input terminal, a second input terminal, a first output terminal, and a second output terminal. The first input terminal and the second input terminal are connected to the DC source. The boost module boosts the first DC voltage to obtain a second DC voltage at the first output terminal and a third DC voltage at the second output terminal, wherein the second DC voltage is greater than the third DC voltage. One end of the first gating module is connected to the first output terminal, and the other end of the first gating module is connected to a transistor to be driven. One end of the second gating module is connected to the connection point between the other end of the first gating module and the transistor to be driven, and the other end of the second gating module is connected to the second output terminal. The first gating module and the second gating module cooperate to output the second DC voltage or the third DC voltage to the transistor to be driven, correspondingly turning the transistor on or off.

[0006] In one possible implementation, both the first gating module and the second gating module can be in an on or off state. The first gating module and the second gating module cooperate to control the output of the second DC voltage or the third DC voltage to the transistor to be driven by different combinations of on and off states.

[0007] In one possible implementation, the turn-off voltage of the transistor to be driven is less than or equal to zero. The DC source includes a positive terminal and a negative terminal. The positive terminal is used to output the first DC voltage and is connected to the first input terminal. The negative terminal is connected to the second input terminal. The positive terminal is also connected to a terminal providing a reference voltage, which is less than the first DC voltage, causing the third DC voltage to be less than or equal to zero. Therefore, when the second gating module outputs the third DC voltage to the transistor to be driven, it controls the transistor to turn off.

[0008] In one possible implementation, when the first gating module is in the ON state and the second gating module is in the OFF state, the second DC voltage at the first output terminal is output to the transistor to be driven through the first gating module, causing the transistor to be driven to turn on. When the first gating module is in the OFF state and the second gating module is in the ON state, the third DC voltage at the second output terminal is output to the transistor to be driven through the second gating module, causing the transistor to be driven to turn off.

[0009] In one possible implementation, the first gating module includes a second switch connected between the first output terminal and the transistor to be driven. The second switch can be turned on or off to correspondingly position the first gating module in an on or off state. The second gating module includes a third switch and a first resistor connected in parallel. One end of the third switch is connected to the connection point between the other end of the first gating module and the transistor to be driven, and the other end of the third switch is connected to the second output terminal. The third switch can be turned on or off to correspondingly position the second gating module in an on or off state.

[0010] In one possible implementation, the transistor driving circuit further includes a controller connected to the first gating module, the second gating module, and the boost module. The controller is used to control the first gating module to be in a conducting or disconnected state, control the second gating module to be in a conducting or disconnected state, and output a boost signal to the boost module to control the boost module to perform boost conversion on the first DC voltage.

[0011] In one possible implementation, the boost module includes a first inductor, a first switch, a first diode, and a first capacitor. The first inductor and the first diode are sequentially connected between the first input terminal and the first output terminal. One end of the first switch is connected to the connection point between the first inductor and the first diode, and the other end of the first switch is connected to the connection point between the second input terminal and the second output terminal. The first capacitor is connected between the first output terminal and the second output terminal. The first switch is used to alternately switch between on and off states to charge the first capacitor, such that the voltage at the first output terminal is the second DC voltage, and the voltage at the second output terminal is the third DC voltage.

[0012] In one possible implementation, the reference voltage is zero voltage, and the turn-off voltage of the transistor to be driven is less than zero voltage.

[0013] In one possible implementation, the transistor to be driven is a gallium nitride field-effect transistor.

[0014] Secondly, an electronic device is also provided, comprising a transistor to be driven and a transistor driving circuit. The transistor driving circuit includes a DC source, a boost module, a first gating module, and a second gating module connected in sequence. The DC source is used to output a first DC voltage. The boost module includes a first input terminal, a second input terminal, a first output terminal, and a second output terminal. The first input terminal and the second input terminal are connected to the DC source. The boost module is used to boost the first DC voltage to obtain a second DC voltage at the first output terminal and a third DC voltage at the second output terminal, wherein the second DC voltage is greater than the third DC voltage. One end of the first gating module is connected to the first output terminal, and the other end of the first gating module is used to connect to the transistor to be driven. One end of the second gating module is connected to the connection point between the other end of the first gating module and the transistor to be driven, and the other end of the second gating module is connected to the second output terminal. The first gating module and the second gating module cooperate to output the second DC voltage or the third DC voltage to the transistor to be driven, correspondingly causing the transistor to be turned on or off.

[0015] The transistor driving circuit and electronic device of this application use a single boost module to boost the input DC voltage, generating two DC voltages with different values. A first gating module and a second gating module are respectively connected between the high and low voltage output terminals and the transistor to be driven. The two gating modules coordinate to output the high voltage when the transistor needs to be turned on and the low voltage when the transistor needs to be turned off. This architecture, which generates dual voltages with a single module and coordinates with the dual gating modules, significantly simplifies the topology of the driving circuit compared to traditional schemes that require multiple independent power supplies to generate turn-on and turn-off voltages separately. It reduces the number of components and the board area occupied. Furthermore, since both driving voltages are generated by the same boost module, voltage accuracy and synchronization are more easily guaranteed. Attached Figure Description

[0016] To more clearly illustrate the technical solutions in the embodiments of this application or the background art, the accompanying drawings used in the embodiments of this application or the background art will be described below.

[0017] Figure 1 This is a schematic diagram of a transistor driving circuit in some embodiments of this application.

[0018] Figure 2 This is another schematic diagram of a transistor driving circuit in some embodiments of this application.

[0019] Figure 3 This is a schematic diagram of an electronic device in some embodiments of this application.

[0020] Explanation of reference numerals in the attached diagram: 10, transistor drive circuit; 100, DC source; V1, first DC voltage; 110, connection terminal; 200, boost module; A, first input terminal; B, second input terminal; C, first output terminal; V2, second DC voltage; D, second output terminal; V3, third DC voltage; L1, first inductor; S1, second switch; D1, first diode; C1, first capacitor; 300, first gating module; S2, first switch; 400, second gating module; S3, third switch; R1, first resistor; 500, controller; 20, transistor to be driven; 1, electronic device. Detailed Implementation

[0021] The technical solutions of the embodiments of this application will be clearly and completely described below with reference to the accompanying drawings. Obviously, the described embodiments are only some embodiments of this application, and not all embodiments. Based on the embodiments of this application, all other embodiments obtained by those of ordinary skill in the art without creative effort are within the scope of protection of this application.

[0022] In the description of the embodiments of this application, it should be noted that, unless otherwise expressly specified and limited, the terms "connected" and "linked" should be interpreted broadly. For example, they can refer to a fixed connection, a detachable connection, or an integral connection; they can refer to a mechanical connection or an electrical connection; they can refer to a direct connection or an indirect connection through an intermediate medium. Those skilled in the art can understand the specific meaning of the above terms in this application based on the specific circumstances.

[0023] In the description of the embodiments of this application, it should be noted that the terms "first," "second," etc., are used for descriptive purposes only and should not be construed as indicating or implying relative importance or implicitly specifying the number of indicated technical features. Therefore, a feature defined with "first," "second," etc., may explicitly or implicitly include one or more of that feature. In the description of the embodiments of this application, unless otherwise stated, "multiple" means two or more.

[0024] Furthermore, the terms “comprising” and “having”, and any variations thereof, are intended to cover non-exclusive inclusion, such that a process, method, system, product, or server that includes a series of steps or units is not necessarily limited to those steps or units that are explicitly listed, but may include other steps or units that are not explicitly listed or that are inherent to such processes, methods, products, or devices.

[0025] Please see Figure 1 , Figure 1 This is a schematic diagram of a transistor driving circuit in some embodiments of this application. For example... Figure 1As shown, this application provides a transistor driving circuit 10, which includes a DC source 100, a boost module 200, a first gating module 300, and a second gating module 400 connected in sequence. The DC source 100 is used to output a first DC voltage V1. The boost module 200 includes a first input terminal A, a second input terminal B, a first output terminal C, and a second output terminal D. The first input terminal A and the second input terminal B are connected to the DC source 100. The boost module 200 is used to boost the first DC voltage V1 to obtain a second DC voltage V2 at the first output terminal C and a third DC voltage V3 at the second output terminal D, wherein the second DC voltage V2 is greater than the third DC voltage V3. One end of the first gating module 300 is connected to the first output terminal C, and the other end of the first gating module 300 is used to connect to the transistor 20 to be driven. One end of the second gating module 400 is connected to the connection point between the other end of the first gating module 300 and the transistor 20 to be driven, and the other end of the second gating module 400 is connected to the second output terminal D. The first gating module 300 and the second gating module 400 are used to cooperate in outputting a second DC voltage V2 or a third DC voltage V3 to the transistor 20 to be driven, thereby turning the transistor 20 to be driven on or off.

[0026] Therefore, the transistor driving circuit 10 of this application boosts the input DC voltage using a single boost module 200, generating two DC voltages with different values. A first gating module 300 and a second gating module 400 are respectively connected between the high and low voltage output terminals and the transistor 20 to be driven. The two gating modules coordinate to output the high voltage when the transistor needs to be turned on and the low voltage when the transistor needs to be turned off. This architecture, which generates dual voltages with a single module and outputs them in conjunction with dual gating modules, significantly simplifies the topology of the driving circuit compared to traditional schemes that require multiple independent power supplies to generate turn-on and turn-off voltages separately. It reduces the number of components and the board area occupied. Furthermore, since both driving voltages are generated by the same boost module 200, voltage accuracy and synchronization are more easily guaranteed.

[0027] In this system, a voltage difference is formed between the first output terminal C and the second output terminal D of the boost module 200, with the first output terminal C having a higher potential relative to the second output terminal D. When the second output terminal D is connected to a certain reference voltage, the voltage values ​​of the first output terminal C and the second output terminal D relative to ground are respectively the second DC voltage V2 and the third DC voltage V3.

[0028] Furthermore, both the first gating module 300 and the second gating module 400 can be in the on and off states. The first gating module 300 and the second gating module 400 cooperate to control the output of the second DC voltage V2 or the third DC voltage V3 to the transistor to be driven 20 by being in different combinations of on and off states.

[0029] Therefore, the transistor driving circuit 10 described above in this application can be configured so that both gating modules can be independently in the on or off state, and the output voltage selection can be controlled by using different on / off combinations of the two. This method distributes the voltage selection function to the switching combinations of the two gating modules, eliminating the need for additional logic conversion circuits. Reliable switching between high and low voltages can be achieved simply by controlling the on / off state of each gating module. The control method is simple and direct, and the state switching is clear.

[0030] Please refer to the following: Figure 2 , Figure 2 This is another schematic diagram of a transistor driving circuit in some embodiments of this application. For example... Figure 1 , Figure 2 As shown, the turn-off voltage of the transistor 20 to be driven is less than or equal to zero. The DC source 100 includes a positive terminal and a negative terminal. The positive terminal is used to output a first DC voltage V1 and is connected to the first input terminal A. The negative terminal is connected to the second input terminal B. The positive terminal is also used to connect to a connection terminal 110 that provides a reference voltage. The reference voltage is less than the first DC voltage V1, making the third DC voltage V3 less than or equal to zero. Therefore, when the second selection module 400 outputs the third DC voltage V3 to the transistor 20 to be driven, it controls the transistor 20 to be turned off.

[0031] Therefore, the transistor driving circuit 10 described in this application connects the positive terminal of the power supply to the connection terminal 110 that provides the reference voltage, so that the second output terminal D of the boost module 200 can form a negative voltage relative to the reference terminal. For transistors that require negative or zero voltage to reliably turn off, this configuration can provide a driving voltage that meets the turn-off requirements without the need for an additional negative voltage power supply, effectively preventing the transistor from being falsely turned on in the off state and improving the compatibility of the driving circuit with new wide bandgap devices.

[0032] like Figure 1 , Figure 2As shown, when the first gating module 300 is in the ON state and the second gating module 400 is in the OFF state, the second DC voltage V2 at the first output terminal C is output to the transistor 20 to be driven through the first gating module 300, causing the transistor 20 to be driven to turn on. When the first gating module 300 is in the OFF state and the second gating module 400 is in the ON state, the third DC voltage V3 at the second output terminal D is output to the transistor 20 to be driven through the second gating module 400, causing the transistor 20 to turn off.

[0033] Therefore, the transistor driving circuit 10 of this application, when the first gating module 300 is turned on and the second gating module 400 is turned off, directly outputs the high voltage of the first output terminal C to the transistor to turn it on; when the first gating module 300 is turned off and the second gating module 400 is turned on, it outputs the low voltage of the second output terminal D to the transistor to turn it off. The two gating modules are complementary in conduction, and only one module is in the conducting state at any given time, avoiding the risk of direct short circuit between the high and low voltage output terminals, while ensuring a stable output of the driving voltage, and making the circuit safe and reliable in operation.

[0034] like Figure 1 , Figure 2 As shown, the first gating module 300 includes a second switch S1 connected between the first output terminal C and the transistor 20 to be driven. The second switch S1 can be turned on or off to correspondingly put the first gating module 300 into a conducting or de-conducting state. The second gating module 400 includes a third switch S3 and a first resistor R1 connected in parallel. One end of the third switch S3 is connected to the connection point between the other end of the first gating module 300 and the transistor 20 to be driven, and the other end of the third switch S3 is connected to the second output terminal D. The third switch S3 can be turned on or off to correspondingly put the second gating module 400 into a conducting or de-conducting state.

[0035] Therefore, the transistor driving circuit 10 described in this application, with its first gating module 300 achieving on / off control through only one switch, has a simple structure. The second gating module 400 connects a resistor in parallel across the switch. When the third switch S3 is on, it directly outputs a low voltage to turn off the transistor; when the third switch S3 is off, the resistor provides a definite pull-down level to the gate of the transistor 20 to be driven, avoiding uncertainty caused by a floating gate. This parallel resistor design enhances the anti-interference capability and turn-off reliability of the driving circuit at extremely low cost.

[0036] like Figure 1 , Figure 2As shown, the transistor driving circuit 10 also includes a controller 500, which is connected to the first gating module 300, the second gating module 400, and the boost module 200. The controller 500 is used to control the first gating module 300 to be in a conducting state or a disconnected state, and to control the second gating module 400 to be in a conducting state or a disconnected state, and to output a boost signal to the boost module 200 to control the boost module 200 to perform boost conversion on the first DC voltage V1.

[0037] Therefore, in the transistor driving circuit 10 described above, the controller 500 simultaneously outputs control signals to the first gating module 300, the second gating module 400, and the boost module 200, so that the boost conversion and gating control in the driving circuit are coordinated and managed by the same controller 500. This integrated control method avoids communication delay and synchronization problems between multiple chips, improves the integration and response speed of the driving circuit, and reduces the number of external components.

[0038] In some embodiments, the controller 500 may be a general-purpose processor such as a central processing unit (CPU), or a digital signal processor (DSP), application-specific integrated circuit (ASIC), field-programmable gate array (FPGA), or other programmable logic devices, discrete gate logic devices, transistor logic devices, or other logic control devices. It may also be a microprocessor such as a micro control unit (MCU).

[0039] In some embodiments, the controller 500 may first start the boost module 200 to generate a stable second DC voltage V2 and a third DC voltage V3, and then output a control signal to drive the transistor 20 to be driven, thereby ensuring the stability and reliability of the drive voltage.

[0040] like Figure 1 , Figure 2As shown, the boost module 200 includes a first inductor L1, a first switch S2, a first diode D1, and a first capacitor C1. The first inductor L1 and the first diode D1 are sequentially connected between the first input terminal A and the first output terminal C. One end of the first switch S2 is connected to the connection point between the first inductor L1 and the first diode D1, and the other end of the first switch S2 is connected to the connection point between the second input terminal B and the second output terminal D. The first capacitor C1 is connected between the first output terminal C and the second output terminal D. The first switch S2 is used to alternately switch between on and off states to charge the first capacitor C1, resulting in a second DC voltage V2 at the first output terminal C and a third DC voltage V3 at the second output terminal D.

[0041] Therefore, the transistor driving circuit 10 and boost module 200 of this application adopt a classic boost topology composed of inductors, switching transistors, diodes, and capacitors. By charging the capacitor through the high-frequency switching of the switching transistors, the first output terminal C obtains a second DC voltage V2 that is higher than the input voltage, while the second output terminal D has a lower voltage relative to the first output terminal C. This topology is mature and reliable, has high conversion efficiency, and is convenient for component selection. Furthermore, the characteristic that the voltage through the second output terminal D is naturally lower than that through the first output terminal C naturally forms the high and low dual voltages required to drive the transistor to turn on and off.

[0042] Specifically, by connecting the positive terminal of the power supply to the reference voltage connection terminal 110, and using the high-frequency switching of the switching transistor in the boost module 200 to charge the capacitor, the voltage of the first output terminal C relative to ground is increased to the second DC voltage V2. Since there is a current path between the second output terminal D and the negative terminal of the power supply when the switching transistor is turned on, the potential of the second output terminal D relative to ground can be lower than zero, forming a negative third DC voltage V3.

[0043] Specifically, when the first switch S2 is on, the first inductor L1 stores energy from the DC source 100, the first diode D1 is reverse-biased and cut off, and the first capacitor C1 supplies power to the first output terminal C. When the first switch S2 is off, the energy in the first inductor L1 is superimposed on the input voltage and charges the first capacitor C1 through the first diode D1. The voltage across the first capacitor C1 is the difference between the second DC voltage V2 and the third DC voltage V3. The magnitude of the second DC voltage V2 can be adjusted by adjusting the duty cycle of the first switch S2.

[0044] In one possible implementation, the reference voltage is zero, and the turn-off voltage of the transistor 20 to be driven is less than zero.

[0045] Therefore, the transistor driving circuit 10 described above in this application configures the reference voltage to zero, making the turn-off voltage lower than zero, i.e., a negative voltage. For transistors such as GaN that require negative voltage turn-off, negative voltage turn-off can provide higher turn-off reliability, effectively suppress the gate voltage rise caused by dv / dt during high-speed switching, avoid transistor false turn-on, and improve the stability and safety of the circuit under high-frequency and high-voltage conditions.

[0046] The reference voltage is zero voltage, meaning that connection terminal 110 is ground.

[0047] In one possible implementation, the transistor to be driven 20 is a gallium nitride field-effect transistor.

[0048] Therefore, the transistor driving circuit 10 described above in this application is a gallium nitride field-effect transistor design, which makes full use of the advantages of GaN devices such as high frequency and low on-resistance. At the same time, by providing dual voltage outputs that meet the requirements of its gate drive voltage range and turn-off negative voltage, it ensures that the GaN device can be turned on quickly and turned off reliably during high-speed switching, thereby maximizing the performance advantages of GaN devices in high power density scenarios such as AI server power supplies and communication power supplies.

[0049] Furthermore, the first DC voltage V1 can be 4V, the second DC voltage V2 can be boosted to 12V to turn on the gallium nitride field-effect transistor, and the third DC voltage V3 is -4V because the positive terminal of the power supply is connected to a connection terminal 110 that provides a reference voltage to turn off the gallium nitride field-effect transistor.

[0050] In other embodiments, in addition to GaN transistors, this driving circuit is also applicable to other power transistors that require both positive and negative voltage driving, such as wide bandgap semiconductor devices like SiC MOSFETs, or devices like IGBTs that require negative voltage turn-off.

[0051] The transistor driver circuit 10 of this application, through the aforementioned structure, specifically generates a high turn-on voltage and a low turn-off voltage simultaneously via a single boost module 200, and the output is selected by two coordinating gating modules, realizing the dual-voltage output function of the driver circuit. This significantly simplifies the circuit topology and reduces the number of components and board area. The integrated coordinated control of the gating module and boost module 200 by the controller 500, and the stable pull-down level provided by the parallel resistor in the second gating module 400, enhance the anti-interference capability and turn-off reliability of the driver circuit. Simultaneously, by connecting the positive terminal of the power supply to the reference voltage connection terminal 110, the turn-off voltage can be negative, meeting the requirements of new wide-bandgap transistors such as gallium nitride for negative voltage turn-off, effectively preventing false turn-on. This driver circuit has a compact structure, simple control logic, and strong adaptability, better meeting the high efficiency, high reliability, and high power density requirements of AI server power supplies, communication power supplies, and other applications.

[0052] Please see Figure 3 , Figure 3 This is a schematic diagram of an electronic device in some embodiments of this application. For example... Figure 3 As shown, this application also provides an electronic device 1, which includes a transistor 20 to be driven and a transistor driving circuit 10 in any of the foregoing embodiments.

[0053] Please refer to it again. Figure 1 .like Figure 1 As shown, the transistor driving circuit 10 includes a DC source 100, a boost module 200, a first gating module 300, and a second gating module 400 connected in sequence. The DC source 100 is used to output a first DC voltage V1. The boost module 200 includes a first input terminal A, a second input terminal B, a first output terminal C, and a second output terminal D. The first input terminal A and the second input terminal B are connected to the DC source 100. The boost module 200 is used to boost the first DC voltage V1 to obtain a second DC voltage V2 at the first output terminal C and a third DC voltage V3 at the second output terminal D, wherein the second DC voltage V2 is greater than the third DC voltage V3. One end of the first gating module 300 is connected to the first output terminal C, and the other end of the first gating module 300 is used to connect to the transistor 20 to be driven. One end of the second gating module 400 is connected to the connection point between the other end of the first gating module 300 and the transistor 20 to be driven, and the other end of the second gating module 400 is connected to the second output terminal D. The first gating module 300 and the second gating module 400 are used to cooperate in outputting a second DC voltage V2 or a third DC voltage V3 to the transistor 20 to be driven, thereby turning the transistor 20 to be driven on or off.

[0054] For a more specific description of the transistor driving circuit 10, please refer to the relevant content of the transistor driving circuit 10 in any of the foregoing embodiments, which will not be repeated here.

[0055] The transistor driver circuit 10 and electronic device 1 of this application, through the aforementioned structure, specifically generate a high turn-on voltage and a low turn-off voltage simultaneously via a single boost module 200, and the output is selected by two coordinating gating modules, realizing the dual-voltage output function of the driver circuit. This significantly simplifies the circuit topology and reduces the number of components and board area. The integrated coordinated control of the gating module and boost module 200 by the controller 500, and the stable pull-down level provided by the parallel resistor in the second gating module 400, enhance the anti-interference capability and turn-off reliability of the driver circuit. Simultaneously, by connecting the positive terminal of the power supply to the reference voltage connection terminal 110, the turn-off voltage can be negative, meeting the requirements of new wide-bandgap transistors such as gallium nitride for negative voltage turn-off, effectively preventing false turn-on. This driver circuit has a compact structure, simple control logic, and strong adaptability, better meeting the requirements of AI server power supplies, communication power supplies, and other applications for high efficiency, high reliability, and high power density in driver circuits.

[0056] The above description is merely a specific embodiment of this application, but the scope of protection of this application is not limited thereto. Any variations or substitutions that can be easily conceived by those skilled in the art within the scope of the technology disclosed in this application should be included within the scope of protection of this application. Where there is no conflict, the embodiments and features in the embodiments of this application can be combined with each other. Therefore, the scope of protection of this application should be determined by the scope of the claims.

Claims

1. A transistor driving circuit, characterized in that, It includes a DC power source, a boost module, a first gating module, and a second gating module connected in sequence; The DC source is used to output a first DC voltage; The boost module includes a first input terminal, a second input terminal, a first output terminal, and a second output terminal. The first input terminal and the second input terminal are connected to the DC source. The boost module is used to boost the first DC voltage to obtain a second DC voltage at the first output terminal and a third DC voltage at the second output terminal, wherein the second DC voltage is greater than the third DC voltage. One end of the first gating module is connected to the first output terminal, and the other end of the first gating module is used to connect to the transistor to be driven. One end of the second gating module is connected to the connection point between the other end of the first gating module and the transistor to be driven, and the other end of the second gating module is connected to the second output terminal. The first gating module and the second gating module are used to cooperate to output the second DC voltage or the third DC voltage to the transistor to be driven, thereby turning the transistor to be driven on or off.

2. The transistor driving circuit according to claim 1, characterized in that, Both the first gating module and the second gating module can be in an on or off state. The first gating module and the second gating module cooperate to control the output of the second DC voltage or the third DC voltage to the transistor to be driven by different combinations of on and off states.

3. The transistor driving circuit according to claim 1, characterized in that, The turn-off voltage of the transistor to be driven is less than or equal to zero voltage. The DC source includes a positive power supply terminal and a negative power supply terminal. The positive power supply terminal is used to output the first DC voltage. The positive power supply terminal is connected to the first input terminal, and the negative power supply terminal is connected to the second input terminal. The positive terminal of the power supply is also used to connect to a connection terminal that provides a reference voltage. The reference voltage is less than the first DC voltage, so that the third DC voltage is less than or equal to zero voltage. Then, when the second gating module outputs the third DC voltage to the transistor to be driven, the transistor to be driven is controlled to turn off.

4. The transistor driving circuit according to claim 1, characterized in that, When the first gating module is in the on state and the second gating module is in the off state, the second DC voltage at the first output terminal is output to the transistor to be driven through the first gating module, so that the transistor to be driven is turned on. When the first gating module is in the off state and the second gating module is in the on state, the third DC voltage at the second output terminal is output to the transistor to be driven through the second gating module, thereby turning off the transistor to be driven.

5. The transistor driving circuit according to claim 4, characterized in that, The first gating module includes a second switch, which is connected between the first output terminal and the transistor to be driven. The second switch is turned on or off so that the first gating module is in a corresponding on or off state. The second gating module includes a third switch and a first resistor connected in parallel. One end of the third switch is connected to the connection point between the other end of the first gating module and the transistor to be driven. The other end of the third switch is connected to the second output terminal. The third switch can be turned on or off so that the second gating module is in a corresponding on or off state.

6. The transistor driving circuit according to claim 4, characterized in that, The transistor driving circuit further includes a controller, which is connected to the first gating module, the second gating module, and the boost module. The controller is used to control the first gating module to be in a conducting state or a disconnected state, and to control the second gating module to be in a conducting state or a disconnected state, and to output a boost signal to the boost module to control the boost module to perform boost conversion on the first DC voltage.

7. The transistor driving circuit according to claim 1, characterized in that, The boost module includes a first inductor, a first switch, a first diode, and a first capacitor. The first inductor and the first diode are connected sequentially between the first input terminal and the first output terminal. One end of the first switch is connected to the connection point between the first inductor and the first diode, and the other end of the first switch is connected to the connection point between the second input terminal and the second output terminal. The first capacitor is connected between the first output terminal and the second output terminal. The first switch is used to alternately be in the on and off states to charge the first capacitor, so that the voltage at the first output terminal is the second DC voltage, and the voltage at the second output terminal is the third DC voltage.

8. The transistor driving circuit according to claim 3, characterized in that, The reference voltage is zero, and the turn-off voltage of the transistor to be driven is less than zero.

9. The transistor driving circuit according to claim 3, characterized in that, The transistor to be driven is a gallium nitride field-effect transistor.

10. An electronic device, characterized in that, It includes the transistor to be driven and the transistor driving circuit as described in any one of claims 1-9.

Images