Transistor drive circuit and electronic device

CN122969339APending Publication Date: 2026-10-23SHENZHEN RSPOWER TECH CO LTD
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Patent Information

Application Number
CN202611157064.1
Authority / Receiving Office
CN · China
Patent Type
Applications(China)
Current Assignee / Owner
Filing Date
2026-07-31
Publication Date
2026-10-23

AI Technical Summary

Technical Problem

[0003]传统驱动电路通常需要多路独立电源,例如分别产生正电压用于开通器件、负电压或零电压用于关断器件,电路结构较为复杂,元器件数量多,成本较高,且多路电源之间的协调控制增加了设计难度

Benefits of technology

[0015]本申请的晶体管驱动电路以及电子设备,通过将降压模块与直流源的输入端直接相连,同时设置第一选通模块和第二选通模块分别接入未经降压的第一直流电压和降压后的第二直流电压,两个选通模块通过协调配合,在需要开通晶体管时将高电压选通输出,在需要关断晶体管时将低电压选通输出。该方案仅用一个降压模块即获得驱动晶体管所需的双电压,省去了传统方案中的多路独立电源,简化了电路拓扑,降低了器件成本与占板面积。

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Abstract

The application provides a transistor driving circuit and an electronic device. A first input end of a boosting module is connected with a direct current source, and a step-down module is used for step-down conversion of a first direct current voltage to obtain a second direct current voltage at a first output end. One end of a first gating module is connected with the first input end, and the other end of the first gating module is used for being connected with a transistor to be driven. One end of a second gating module is connected with the first input end, and the other end of the second gating module is connected to a connection point between the other end of the first gating module and the transistor to be driven. The first gating module and the second gating module are used for cooperating to output the first direct current voltage or the second direct current voltage to the transistor to be driven, so as to correspondingly make the transistor to be driven open or off. The application can meet different driving voltages required by new transistor opening and off.
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Description

Technical Field

[0001] This application relates to the field of transistor driving technology, and in particular to a transistor driving circuit and an electronic device. Background Technology

[0002] Transistor driver circuits are widely used in electronic devices such as power converters, motor controllers, and communication equipment to control the switching on and off of power transistors. With the increasing prevalence of new wide-bandgap semiconductor devices such as gallium nitride (GaN) field-effect transistors in high-frequency, high-power-density applications, more stringent requirements are being placed on driver circuits. GaN devices have a narrow gate drive voltage range and typically require a negative or zero voltage to ensure reliable turn-off and prevent false turn-on due to gate voltage fluctuations.

[0003] Traditional driver circuits typically require multiple independent power supplies, such as generating positive voltages to turn on devices and negative or zero voltages to turn off devices. This results in complex circuit structures, a large number of components, and high costs. Furthermore, the coordination and control between multiple power supplies increases the design difficulty. Therefore, simplifying the topology of driver circuits while providing different drive voltages required for the turn-on and turn-off of new transistors has become a pressing technical problem. Summary of the Invention

[0004] This application provides a transistor driving circuit and an electronic device that can meet the different driving voltages required for the turn-on and turn-off of novel transistors.

[0005] In a first aspect, a transistor driving circuit is provided, comprising a DC source, a step-down module, a first gating module, and a second gating module connected in sequence. The DC source outputs a first DC voltage. The step-down module includes a first input terminal and a first output terminal. The first input terminal is connected to the DC source, and the step-down module performs a step-down transformation on the first DC voltage to obtain a second DC voltage at the first output terminal. One end of the first gating module is connected to the first input terminal, and the other end of the first gating module is connected to a transistor to be driven. One end of the second gating module is connected to the first input terminal, and the other end of the second gating module is connected to the connection point between the other end of the first gating module and the transistor to be driven. The first gating module and the second gating module cooperate to output either the first DC voltage or the second DC voltage to the transistor to be driven, correspondingly causing the transistor to be turned on or off.

[0006] In one possible implementation, both the first gating module and the second gating module can be in an on or off state. The first gating module and the second gating module cooperate to control the output of the first DC voltage or the second DC voltage to the transistor to be driven by a combination of different on and off states.

[0007] In one possible implementation, the turn-off voltage of the transistor to be driven is less than or equal to zero. The DC source includes a positive terminal and a negative terminal. The positive terminal is used to output the first DC voltage and is connected to the first input terminal. The negative terminal is connected to a terminal providing a reference voltage, which is less than the first DC voltage, such that the second DC voltage is less than or equal to zero. Therefore, when the first gating module outputs the second DC voltage to the transistor to be driven, it controls the transistor to be turned off.

[0008] In one possible implementation, when the first gating module is in the off state and the second gating module is in the on state, the first DC voltage at the first input terminal is output to the transistor to be driven through the second gating module, causing the transistor to be driven to turn on. When the first gating module is in the on state and the second gating module is in the off state, the second DC voltage at the first output terminal is output to the transistor to be driven through the first gating module, causing the transistor to be driven to turn off.

[0009] In one possible implementation, the first gating module includes a second switch connected between the first output terminal and the transistor to be driven. The second switch can be turned on or off to correspondingly position the first gating module in an on or off state. The second gating module includes a third switch and a first resistor. One end of the third switch is connected to the first output terminal, and the other end of the third switch is connected via the first resistor to a connection point between the other end of the first gating module and the transistor to be driven. The third switch can be turned on or off to correspondingly position the second gating module in an on or off state.

[0010] In one possible implementation, the transistor driving circuit further includes a controller connected to the first gating module, the second gating module, and the buck module. The controller is used to control the first gating module to be in an on or off state, control the second gating module to be in an on or off state, and output a buck signal to the buck module to control the buck module to perform buck conversion on the first DC voltage.

[0011] In one possible implementation, the step-down module includes a first inductor, a first switch, a first diode, and a first capacitor. The first switch and the first diode are sequentially connected between the first input terminal and the first output terminal. One end of the first inductor is connected to the connection point between the first switch and the first diode, and the other end of the first inductor is grounded. One end of the first capacitor is connected to the first output terminal, and the other end of the first capacitor is grounded. The first switch is used to alternately switch between on and off states to charge the first capacitor, such that the voltage at the first output terminal is the second DC voltage.

[0012] In one possible implementation, the reference voltage is zero voltage, and the turn-off voltage of the transistor to be driven is less than zero voltage.

[0013] In one possible implementation, the transistor to be driven is a gallium nitride field-effect transistor.

[0014] Secondly, an electronic device is also provided, comprising a transistor to be driven and a transistor driving circuit. The transistor driving circuit includes a DC source, a step-down module, a first gating module, and a second gating module connected in sequence. The DC source is used to output a first DC voltage. The step-down module includes a first input terminal and a first output terminal. The first input terminal is connected to the DC source, and the step-down module is used to step down the first DC voltage to obtain a second DC voltage at the first output terminal. One end of the first gating module is connected to the first input terminal, and the other end of the first gating module is used to connect to the transistor to be driven. One end of the second gating module is connected to the first input terminal, and the other end of the second gating module is connected to the connection point between the other end of the first gating module and the transistor to be driven. The first gating module and the second gating module cooperate to output the first DC voltage or the second DC voltage to the transistor to be driven, correspondingly causing the transistor to be turned on or off.

[0015] The transistor driving circuit and electronic device of this application directly connect a buck module to the input terminal of a DC power source. Simultaneously, a first gating module and a second gating module are respectively connected to a first DC voltage (without bucking) and a second DC voltage (after bucking). The two gating modules coordinate to output a high voltage when the transistor needs to be turned on and a low voltage when the transistor needs to be turned off. This solution uses only one buck module to obtain the dual voltages required to drive the transistor, eliminating the need for multiple independent power supplies in traditional solutions, simplifying the circuit topology, and reducing device cost and board area. Attached Figure Description

[0016] To more clearly illustrate the technical solutions in the embodiments of this application or the background art, the accompanying drawings used in the embodiments of this application or the background art will be described below.

[0017] Figure 1 This is a schematic diagram of a transistor driving circuit in some embodiments of this application.

[0018] Figure 2 This is another schematic diagram of a transistor driving circuit in some embodiments of this application.

[0019] Figure 3 This is a schematic diagram of an electronic device in some embodiments of this application.

[0020] Explanation of reference numerals in the attached diagram: 10, transistor driving circuit; 100, DC source; V1, first DC voltage; 110, connection terminal; 200, step-down module; A, first input terminal; C, first output terminal; V2, second DC voltage; L1, first inductor; S1, first switch; D1, first diode; C1, first capacitor; 300, first gating module; S2, second switch; 400, second gating module; S3, third switch; R1, first resistor; 500, controller; 20, transistor to be driven; 1, electronic device. Detailed Implementation

[0021] The technical solutions of the embodiments of this application will be clearly and completely described below with reference to the accompanying drawings. Obviously, the described embodiments are only some embodiments of this application, and not all embodiments. Based on the embodiments of this application, all other embodiments obtained by those of ordinary skill in the art without creative effort are within the scope of protection of this application.

[0022] In the description of the embodiments of this application, it should be noted that, unless otherwise expressly specified and limited, the terms "connected" and "linked" should be interpreted broadly. For example, they can refer to a fixed connection, a detachable connection, or an integral connection; they can refer to a mechanical connection or an electrical connection; they can refer to a direct connection or an indirect connection through an intermediate medium. Those skilled in the art can understand the specific meaning of the above terms in this application based on the specific circumstances.

[0023] In the description of the embodiments of this application, it should be noted that the terms "first," "second," etc., are used for descriptive purposes only and should not be construed as indicating or implying relative importance or implicitly specifying the number of indicated technical features. Therefore, a feature defined with "first," "second," etc., may explicitly or implicitly include one or more of that feature. In the description of the embodiments of this application, unless otherwise stated, "multiple" means two or more.

[0024] Furthermore, the terms “comprising” and “having”, and any variations thereof, are intended to cover non-exclusive inclusion, such that a process, method, system, product, or server that includes a series of steps or units is not necessarily limited to those steps or units that are explicitly listed, but may include other steps or units that are not explicitly listed or that are inherent to such processes, methods, products, or devices.

[0025] Please see Figure 1 , Figure 1 This is a schematic diagram of a transistor driving circuit in some embodiments of this application. For example... Figure 1 As shown, this application provides a transistor driving circuit 10, which includes a DC source 100, a step-down module 200, a first gating module 300, and a second gating module 400 connected in sequence. The DC source 100 is used to output a first DC voltage V1. The step-down module 200 includes a first input terminal A and a first output terminal C. The first input terminal A is connected to the DC source 100, and the step-down module 200 is used to step down the first DC voltage V1 to obtain a second DC voltage V2 at the first output terminal C. One end of the first gating module 300 is connected to the first input terminal A, and the other end of the first gating module 300 is used to connect to the transistor 20 to be driven. One end of the second gating module 400 is connected to the first input terminal A, and the other end of the second gating module 400 is connected to the connection point between the other end of the first gating module 300 and the transistor 20 to be driven. The first gating module 300 and the second gating module 400 are used to cooperate in outputting a first DC voltage V1 or a second DC voltage V2 to the transistor to be driven 20, thereby turning the transistor to be driven 20 on or off.

[0026] Therefore, the transistor driving circuit 10 described in this application directly connects the buck module 200 to the input terminal of the DC source 100, and simultaneously sets the first gating module 300 and the second gating module 400 to be connected to the first DC voltage V1 (without bucking) and the second DC voltage V2 (with bucking), respectively. The two gating modules coordinate to output the high voltage when the transistor needs to be turned on and the low voltage when the transistor needs to be turned off. This solution uses only one buck module 200 to obtain the dual voltages required to drive the transistor, eliminating the need for multiple independent power supplies in traditional solutions, simplifying the circuit topology, and reducing device cost and board area.

[0027] Both the first gating module 300 and the second gating module 400 can be in the on and off states. The first gating module 300 and the second gating module 400 cooperate to control the output of the first DC voltage V1 or the second DC voltage V2 to the transistor to be driven 20 by being in different combinations of on and off states.

[0028] Therefore, the transistor driving circuit 10 described above in this application can be configured so that both gating modules can be independently in the on or off state, and the output voltage selection can be controlled by using different on / off combinations of the two. This method distributes the voltage selection function to the switching combinations of the two gating modules, eliminating the need for additional logic conversion circuits. Reliable switching between high and low voltages can be achieved simply by controlling the on / off state of each gating module. The control method is simple and direct, and the state switching is clear.

[0029] Please refer to the following: Figure 2 , Figure 2 This is another schematic diagram of a transistor driving circuit in some embodiments of this application. For example... Figure 1 , Figure 2 As shown, the turn-off voltage of the transistor 20 to be driven is less than or equal to zero. The DC source 100 includes a positive terminal and a negative terminal. The positive terminal is used to output a first DC voltage V1 and is connected to the first input terminal A. The negative terminal is used to connect to a connection terminal 110 that provides a reference voltage. The reference voltage is less than the first DC voltage V1, making the second DC voltage V2 less than or equal to zero. Therefore, when the first selection module 300 outputs the second DC voltage V2 to the transistor 20 to be driven, it controls the transistor 20 to be turned off.

[0030] Therefore, the transistor driving circuit 10 described in this application connects the negative terminal of the DC power source 100 to the connection terminal 110 that provides the reference voltage, so that the second DC voltage V2 output by the buck module 200 can be negative or zero relative to the reference terminal. For transistors that require negative or zero voltage turn-off, this connection method can provide a driving level that meets the turn-off requirements without the need for an additional negative voltage power supply, effectively preventing the transistor from being falsely turned on during turn-off and enhancing the compatibility of the driving circuit with new wide bandgap devices such as gallium nitride.

[0031] like Figure 1 , Figure 2 As shown, when the first gating module 300 is in the off state and the second gating module 400 is in the on state, the first DC voltage V1 at the first input terminal A is output to the transistor 20 to be driven through the second gating module 400, causing the transistor 20 to be driven to turn on. When the first gating module 300 is in the on state and the second gating module 400 is in the off state, the second DC voltage V2 at the first output terminal C is output to the transistor 20 to be driven through the first gating module 300, causing the transistor 20 to turn off.

[0032] Therefore, the transistor driving circuit 10 of this application, when the first gating module 300 is off and the second gating module 400 is on, directly outputs the high voltage at the first input terminal A (without being stepped down) to the transistor to turn it on; when the first gating module 300 is on and the second gating module 400 is off, it outputs the low voltage at the first output terminal C (after stepping down) to the transistor to turn it off. The two gating modules are complementary in conduction, and only one module is in the conducting state at any given time, avoiding the risk of direct short circuit between the high and low voltage output terminals, while ensuring a stable output of the driving voltage, making the circuit safe and reliable in operation.

[0033] like Figure 1 , Figure 2 As shown, the first gating module 300 includes a second switch S2, which is connected between the first output terminal C and the transistor 20 to be driven. The second switch S2 can be turned on or off to correspondingly put the first gating module 300 into a conducting or de-conducting state. The second gating module 400 includes a third switch S3 and a first resistor R1. One end of the third switch S3 is connected to the first output terminal C, and the other end of the third switch S3 is connected via the first resistor R1 to the connection point between the other end of the first gating module 300 and the transistor 20 to be driven. The third switch S3 can be turned on or off to correspondingly put the second gating module 400 into a conducting or de-conducting state.

[0034] Therefore, the transistor driving circuit 10 described in this application has a simple structure, where the first gating module 300 achieves on / off control with only one switch. The second gating module 400 has a resistor connected in series between the switch and the transistor. When the third switch S3 is on, the first DC voltage V1 is output to the transistor through the resistor, turning it on. The resistor limits the gate charging current and suppresses gate oscillation. When the third switch S3 is off, the first gating module 300 is on, and the stepped-down low voltage is directly output to the transistor, turning it off. This series resistor enhances the anti-interference capability and switching stability of the driving circuit at extremely low cost.

[0035] like Figure 1 , Figure 2 As shown, the transistor driving circuit 10 also includes a controller 500, which is connected to the first gating module 300, the second gating module 400, and the buck module 200. The controller 500 is used to control the first gating module 300 to be in a conducting state or a disconnected state, and to control the second gating module 400 to be in a conducting state or a disconnected state, and to output a buck signal to the buck module 200 to control the buck module 200 to perform buck conversion on the first DC voltage V1.

[0036] Therefore, in the transistor driving circuit 10 described above, the controller 500 simultaneously outputs control signals to the first gating module 300, the second gating module 400, and the buck module 200, so that the buck conversion and gating control in the driving circuit are coordinated and managed by the same controller 500. This integrated control method avoids communication delay and synchronization problems between multiple chips, improves the integration and response speed of the driving circuit, and reduces the number of external components.

[0037] In some embodiments, the controller 500 may be a general-purpose processor such as a central processing unit (CPU), or a digital signal processor (DSP), application-specific integrated circuit (ASIC), field-programmable gate array (FPGA), or other programmable logic devices, discrete gate logic devices, transistor logic devices, or other logic control devices. It may also be a microprocessor such as a micro control unit (MCU).

[0038] In some embodiments, the controller 500 may first start the buck module 200 to generate a stable second DC voltage V2, and then output a control signal to drive the transistor 20 to be driven, thereby ensuring the stability and reliability of the drive voltage.

[0039] like Figure 1 , Figure 2 As shown, the step-down module 200 includes a first inductor L1, a first switch S1, a first diode D1, and a first capacitor C1. The first switch S1 and the first diode D1 are sequentially connected between the first input terminal A and the first output terminal C. One end of the first inductor L1 is connected to the connection point between the first switch S1 and the first diode D1, and the other end of the first inductor L1 is grounded. One end of the first capacitor C1 is connected to the first output terminal C, and the other end of the first capacitor C1 is grounded. The first switch S1 is used to alternately switch between on and off states to charge the first capacitor C1, making the voltage at the first output terminal C a second DC voltage V2.

[0040] Therefore, the transistor driving circuit 10 and the buck module 200 described in this application adopt a classic Buck topology consisting of a switching transistor, a diode, an inductor, and a capacitor. By frequently switching the switching transistor on and off, the capacitor is charged, so that the first output terminal C obtains a second DC voltage V2 lower than the input voltage. This topology is mature and reliable, has high conversion efficiency, and facilitates component selection. It provides a definite low level for transistor turn-off through a stable buck output.

[0041] In this process, by switching the first switch S1 on and off at high frequency, when the first switch S1 is on, the first DC voltage V1 charges the first capacitor C1 through the first inductor L1, and when the first switch S1 is off, the first inductor L1 continues to supply power to the first capacitor C1 through the freewheeling current of the first diode D1, thereby obtaining a second DC voltage V2 at the first output terminal C that is lower than the first DC voltage V1.

[0042] Specifically, when the first switch S1 is turned on, the first DC voltage V1 charges the first capacitor C1 through the first switch S1 and the first inductor L1, and simultaneously supplies power to the output terminal; when the first switch S1 is turned off, the energy stored in the first inductor L1 freewheels through the first diode D1, continuing to supply power to the first capacitor C1 and the output terminal. The magnitude of the second DC voltage V2 can be adjusted by adjusting the duty cycle of the first switch S1.

[0043] In one possible implementation, the reference voltage is zero, and the turn-off voltage of the transistor 20 to be driven is less than zero.

[0044] Therefore, the transistor driving circuit 10 described above in this application configures the reference voltage to zero, making the turn-off voltage lower than zero, i.e., a negative voltage. For transistors such as GaN that require negative voltage turn-off, negative voltage turn-off can provide higher turn-off reliability, effectively suppress the gate voltage rise caused by dv / dt during high-speed switching, avoid transistor false turn-on, and improve the stability and safety of the circuit under high-frequency and high-voltage conditions.

[0045] The reference voltage is zero voltage, meaning that connection terminal 110 is ground.

[0046] In one possible implementation, the transistor to be driven 20 is a gallium nitride field-effect transistor.

[0047] Therefore, the transistor driving circuit 10 described above in this application is a gallium nitride field-effect transistor design, which makes full use of the advantages of GaN devices such as high frequency and low on-resistance. At the same time, by providing dual voltage outputs that meet the requirements of its gate drive voltage range and turn-off negative voltage, it ensures that the GaN device can be turned on quickly and turned off reliably during high-speed switching, thereby maximizing the performance advantages of GaN devices in high power density scenarios such as AI server power supplies and communication power supplies.

[0048] Furthermore, the first DC voltage V1 can be 12V, and the second DC voltage V2 can be stepped down to -4V to turn off the gallium nitride field-effect transistor. Since the negative terminal of the power supply is connected to a connection terminal 110 that provides a reference voltage, the first input terminal A presents 12V to turn off the gallium nitride field-effect transistor.

[0049] In other embodiments, in addition to GaN transistors, this driving circuit is also applicable to other power transistors that require both positive and negative voltage driving, such as wide bandgap semiconductor devices like SiC MOSFETs, or devices like IGBTs that require negative voltage turn-off.

[0050] The transistor driver circuit 10 of this application, through the aforementioned structure, specifically generates the low voltage required for turn-off via a single buck module 200, which, together with the un-buckled high voltage, serves as the driving power supply. Two gating modules coordinate to select the output, achieving a dual-voltage output function for the driver circuit. This significantly simplifies the circuit topology and reduces the number of components and board area. The integrated coordinated control of the gating module and buck module 200 by the controller 500, and the gate charging current limiting effect provided by the series resistor in the second gating module 400, enhances the anti-interference capability and switching stability of the driver circuit. Simultaneously, by connecting the negative terminal of the power supply to the reference voltage connection terminal 110, the turn-off voltage can be negative, meeting the negative voltage turn-off requirements of novel wide-bandgap transistors such as gallium nitride, effectively preventing false turn-on. This driver circuit has a compact structure, simple control logic, and strong adaptability, better meeting the high efficiency, high reliability, and high power density requirements of AI server power supplies, communication power supplies, and other applications.

[0051] Please see Figure 3 , Figure 3 This is a schematic diagram of an electronic device in some embodiments of this application. For example... Figure 3 As shown, this application also provides an electronic device 1, which includes a transistor 20 to be driven and a transistor driving circuit 10 in any of the foregoing embodiments.

[0052] Please refer to it again. Figure 1 .like Figure 1 As shown, the transistor driving circuit 10 includes a DC source 100, a step-down module 200, a first gating module 300, and a second gating module connected in sequence. The DC source 100 outputs a first DC voltage V1. The step-down module 200 includes a first input terminal A and a first output terminal C. The first input terminal A is connected to the DC source 100, and the step-down module 200 performs a step-down conversion on the first DC voltage V1 to obtain a second DC voltage V2 at the first output terminal C. One end of the first gating module 300 is connected to the first input terminal A, and the other end of the first gating module 300 is connected to the transistor 20 to be driven. One end of the second gating module 400 is connected to the first input terminal A, and the other end of the second gating module 400 is connected to the connection point between the other end of the first gating module 300 and the transistor 20 to be driven. The first gating module 300 and the second gating module 400 cooperate to output either the first DC voltage V1 or the second DC voltage V2 to the transistor 20 to be driven, thereby turning the transistor 20 on or off accordingly.

[0053] For a more specific description of the transistor driving circuit 10, please refer to the relevant content of the transistor driving circuit 10 in any of the foregoing embodiments, which will not be repeated here.

[0054] The transistor driver circuit 10 and electronic device 1 of this application, through the aforementioned structure, specifically generate the low voltage required for turn-off through a single buck module 200, which, together with the un-buckled high voltage, serves as the driving power supply. Two gating modules coordinate to select the output, achieving a dual-voltage output function for the driver circuit. This significantly simplifies the circuit topology and reduces the number of components and board area. The integrated coordinated control of the gating module and buck module 200 by the controller 500, and the gate charging current limiting effect provided by the series resistor in the second gating module 400, enhances the anti-interference capability and switching stability of the driver circuit. Simultaneously, by connecting the negative terminal of the power supply to the reference voltage connection terminal 110, the turn-off voltage can be negative, meeting the requirements of new wide-bandgap transistors such as gallium nitride for negative voltage turn-off and effectively preventing false turn-on. This driver circuit has a compact structure, simple control logic, and strong adaptability, better meeting the high efficiency, high reliability, and high power density requirements of AI server power supplies, communication power supplies, and other applications.

[0055] The above description is merely a specific embodiment of this application, but the scope of protection of this application is not limited thereto. Any variations or substitutions that can be easily conceived by those skilled in the art within the scope of the technology disclosed in this application should be included within the scope of protection of this application. Where there is no conflict, the embodiments and features in the embodiments of this application can be combined with each other. Therefore, the scope of protection of this application should be determined by the scope of the claims.

Claims

1. A transistor driving circuit, characterized in that, It includes a DC power source, a step-down module, a first gating module, and a second gating module connected in sequence; The DC source is used to output a first DC voltage; The step-down module includes a first input terminal and a first output terminal. The first input terminal is connected to the DC source. The step-down module is used to step down the first DC voltage to obtain a second DC voltage at the first output terminal. One end of the first gating module is connected to the first input terminal, and the other end of the first gating module is used to connect to the transistor to be driven. One end of the second gating module is connected to the first input terminal, and the other end of the second gating module is connected to the connection point between the other end of the first gating module and the transistor to be driven. The first gating module and the second gating module are used to cooperate to output the first DC voltage or the second DC voltage to the transistor to be driven, thereby turning the transistor to be driven on or off.

2. The transistor driving circuit according to claim 1, characterized in that, Both the first gating module and the second gating module can be in an on or off state. The first gating module and the second gating module cooperate to control the output of the first DC voltage or the second DC voltage to the transistor to be driven by different combinations of on and off states.

3. The transistor driving circuit according to claim 1, characterized in that, The turn-off voltage of the transistor to be driven is less than or equal to zero voltage. The DC source includes a positive power supply terminal and a negative power supply terminal. The positive power supply terminal is used to output the first DC voltage. The positive power supply terminal is connected to the first input terminal. The negative terminal of the power supply is connected to a connection terminal that provides a reference voltage. The reference voltage is less than the first DC voltage, so that the second DC voltage is less than or equal to zero. Therefore, when the first gating module outputs the second DC voltage to the transistor to be driven, the transistor to be driven is controlled to turn off.

4. The transistor driving circuit according to claim 1, characterized in that, When the first gating module is in the off state and the second gating module is in the on state, the first DC voltage at the first input terminal is output to the transistor to be driven through the second gating module, so that the transistor to be driven is turned on. When the first gating module is in the on state and the second gating module is in the off state, the second DC voltage at the first output terminal is output to the transistor to be driven through the first gating module, thereby turning off the transistor to be driven.

5. The transistor driving circuit according to claim 4, characterized in that, The first gating module includes a second switch, which is connected between the first output terminal and the transistor to be driven. The second switch is turned on or off so that the first gating module is in a corresponding on or off state. The second gating module includes a third switch and a first resistor. One end of the third switch is connected to the first output terminal, and the other end of the third switch is connected to the connection point between the other end of the first gating module and the transistor to be driven through the first resistor. The third switch is turned on or off so that the second gating module is in a corresponding on or off state.

6. The transistor driving circuit according to claim 4, characterized in that, The transistor driving circuit further includes a controller, which is connected to the first gating module, the second gating module, and the buck module. The controller is used to control the first gating module to be in a conducting state or a disconnected state, and to control the second gating module to be in a conducting state or a disconnected state, and to output a buck signal to the buck module to control the buck module to perform buck conversion on the first DC voltage.

7. The transistor driving circuit according to claim 1, characterized in that, The step-down module includes a first inductor, a first switch, a first diode, and a first capacitor. The first switch and the first diode are connected sequentially between the first input terminal and the first output terminal. One end of the first inductor is connected to the connection point between the first switch and the first diode, and the other end of the first inductor is grounded. One end of the first capacitor is connected to the first output terminal, and the other end of the first capacitor is grounded. The first switch is used to alternately be on and off to charge the first capacitor, so that the voltage at the first output terminal is the second DC voltage.

8. The transistor driving circuit according to claim 3, characterized in that, The reference voltage is zero, and the turn-off voltage of the transistor to be driven is less than zero.

9. The transistor driving circuit according to claim 3, characterized in that, The transistor to be driven is a gallium nitride field-effect transistor.

10. An electronic device, characterized in that, It includes the transistor to be driven and the transistor driving circuit as described in any one of claims 1-9.