Current-mode digital gate drive device and control method thereof

Abstract

The application belongs to the technical field of power electronics, and particularly relates to a current-mode digital gate drive device and a control method thereof, which comprises a VE voltage generation module connected with an IGBT, a current drive module, a MOSFET drive voltage generation module, and a software control module connected with the VE voltage generation module, the current drive module and the MOSFET drive voltage generation module respectively; the MOSFET drive voltage generation module is connected with the current drive module; the VE voltage generation module is used for applying a steady voltage to the IGBT when the IGBT is turned off; the MOSFET drive voltage generation module is used for providing a voltage required by the current drive module in the process of turning on and turning off the IGBT; and the software control module is used for adjusting the current when the IGBT is turned on or turned off by controlling the voltage of the current drive module when the IGBT is turned on and turned off. The technical scheme provided by the application can realize the accurate adjustment of the current in the whole process of turning on and turning off the IGBT in time and size with great freedom, and is convenient for realizing the optimal IGBT switching curve control.

Description

Technical Field

[0001] This invention belongs to the field of power electronics technology, specifically relating to a current-type digital gate driving device and its control method. Background Technology

[0002] Insulated-gate bipolar transistors (IGBTs), as representative high-power turn-off power electronic devices, are the core of high-end power equipment and have broad future development prospects. IGBTs are commonly used power semiconductor devices, typically used in circuits controlling high current and high voltage. They combine the advantages of bipolar junction transistors (BJTs) and field-effect transistors (FETs), featuring low on-state voltage drop and high switching speed. There is a close relationship between the power conversion efficiency of power electronic devices and IGBT switching losses. Switching losses are one of the main losses in power electronic devices, leading to energy loss during power conversion. Therefore, to improve the efficiency of power electronic devices, it is necessary to minimize IGBT switching losses, which is of great significance for energy saving and improving equipment performance.

[0003] To reduce IGBT switching losses, designers need to comprehensively consider multiple physical effects and factors to optimize the switching process, thereby improving system performance and reliability. However, most current IGBT drivers cannot achieve sufficiently fine-grained driving processes, cannot provide high-precision current magnitude changes, and cannot achieve more refined optimization of the IGBT driving process. Summary of the Invention

[0004] To overcome the problems existing in the above-mentioned related technologies, the present invention provides a current-type digital gate driving device and its control method.

[0005] According to a first aspect of the present invention, a current-driven digital gate driving device is provided, comprising: a VE voltage generating module, a current driving module, and a MOSFET driving voltage generating module connected to an IGBT, and a software control module respectively connected to the VE voltage generating module, the current driving module, and the MOSFET driving voltage generating module; the MOSFET driving voltage generating module and the current driving module are connected.

[0006] The VE voltage generation module is used to apply a steady-state voltage to the IGBT when the IGBT is turned off;

[0007] The MOSFET drive voltage generation module is used to provide the voltage required by the current drive module during the IGBT turn-on and turn-off processes.

[0008] The software control module is used to adjust the current of the IGBT when it is turned on or off by controlling the voltage of the current drive module.

[0009] Preferably, the device further includes a power supply module connected to the VE voltage generation module, the current drive module, the MOSFET drive voltage generation module and the software control module respectively;

[0010] The power supply module is used to supply power to the VE voltage generation module, the current drive module, the MOSFET drive voltage generation module and the software control module.

[0011] Preferably, the device further includes: a capacitor;

[0012] One end of the capacitor is connected to the MOSFET drive voltage generation module, and the other end is connected to the connection point between the current drive module and the IGBT.

[0013] Preferably, the current drive module includes: multiple groups of MOSFETs; each group of MOSFETs includes: a first MOSFET and a second MOSFET;

[0014] In each group of MOSFETs, the source of the first MOSFET is connected to the drain of the second MOSFET.

[0015] The connection points between the first MOSFET and the second MOSFET in all groups are interconnected and then connected to the gate of the IGBT.

[0016] The drains of the first MOSFETs are all connected to the power module;

[0017] The sources of the second MOSFET are all grounded;

[0018] The gate of the first MOSFET is connected to both the MOSFET drive voltage generation module and the software control module.

[0019] The gate of the second MOS transistor is connected to the software control module.

[0020] Preferably, the first MOS transistor and the second MOS transistor in each group have the same width;

[0021] The widths of the MOSFETs in each group are proportional.

[0022] Preferably, the VE voltage generating module includes: a first operational amplifier;

[0023] The output terminal of the first operational amplifier is connected to the emitter of the IGBT;

[0024] The positive input terminal of the first operational amplifier is connected to the VE reference voltage generation module, and the negative input terminal of the first operational amplifier is connected to the connection point between the output terminal of the first operational amplifier and the emitter of the IGBT.

[0025] Preferably, the MOSFET drive voltage generation module includes: a charge pump, a low-dropout linear regulator (LDO), and a second operational amplifier;

[0026] The output of the second operational amplifier is connected to both the charge pump and the low-dropout linear regulator (LDO).

[0027] The positive input terminal of the second operational amplifier is connected to the gate of the IGBT, and the negative input terminal of the second operational amplifier is connected to the MOSFET drive reference voltage generation module.

[0028] The charge pump is connected to the low dropout linear regulator (LDO) and then to the gates of all the first MOS transistors.

[0029] One end of the capacitor is connected to the connection point between the positive input terminal of the second operational amplifier and the gate of the IGBT, and the other end is connected to the connection point between the charge pump and the low dropout linear regulator (LDO).

[0030] The positive input terminal of the second operational amplifier is connected to the gate of the IGBT and the current drive module, respectively.

[0031] Preferably, the VE voltage generating module is specifically used for:

[0032] When the IGBT is turned off, a preset constant steady-state voltage is generated and applied to the emitter of the IGBT.

[0033] Preferably, the MOSFET drive voltage generation module is specifically used for:

[0034] When the IGBT has not started the turn-on process and the gate voltage of the IGBT is less than or equal to the reference voltage, the low dropout linear regulator (LDO) generates the turn-on voltage of the first MOS transistor on the capacitor.

[0035] When the IGBT is turned on and the gate voltage of the IGBT is greater than the reference voltage, the charge pump is used to generate the turn-on voltage of the first MOS transistor and keep the turn-on voltage of the first MOS transistor at the first voltage so that the IGBT remains in the on state.

[0036] Wherein, the first voltage is the sum of the output voltage of the power module and the turn-on voltage of the first MOSFET.

[0037] Preferably, the software control module is specifically used for:

[0038] When the IGBT turn-on process begins, the gate voltage of the second MOSFET is controlled to become the turn-off voltage of the second MOSFET, 0V, and the turn-on voltage of the first MOSFET is applied to the gate of the first MOSFET, so that the turn-on voltage of the first MOSFET becomes the second voltage, wherein the second voltage is the sum of the turn-on voltage of the first MOSFET and the actual gate potential of the IGBT.

[0039] When the IGBT turn-off process begins, the gate voltage of the first MOSFET is switched to the turn-off voltage of the first MOSFET, and the turn-on voltage of the second MOSFET is applied to the gate of the second MOSFET so that the gate voltage of the IGBT is reduced to 0V, and the turn-on voltage of the first MOSFET is reduced to the second voltage.

[0040] Preferably, the software control module is an FPGA or an MCU.

[0041] Preferably, the software control module includes: an FPGA and a decoder;

[0042] The FPGA is connected to the decoder, and the decoder is connected to the MOSFET drive voltage generation module and the current drive module, respectively.

[0043] Preferably, the software control module includes: an MCU and a decoder;

[0044] The MCU is connected to the decoder, and the decoder is connected to the MOSFET drive voltage generation module and the current drive module, respectively.

[0045] According to a second aspect of the present invention, a control method for a current-mode digital gate driving device is provided, applied to the above-described current-mode digital gate driving device, comprising:

[0046] When the IGBT is turned on and off, the MOSFET drive voltage generation module provides the voltage required by the current drive module during the IGBT's turn-on and turn-off process, and the software control module adjusts the current of the IGBT when it is turned on or off by controlling the voltage of the current drive module.

[0047] When the IGBT is turned off, a steady-state voltage is applied to the IGBT using the VE voltage generation module.

[0048] Preferably, when the IGBT is turned on and off, the MOSFET drive voltage generation module provides the voltage required by the current drive module during the IGBT's turn-on and turn-off processes, and the software control module adjusts the current during IGBT turn-on or turn-off by controlling the voltage of the current drive module, including:

[0049] When the IGBT has not started the turn-on process and the gate voltage of the IGBT is less than or equal to the reference voltage, the turn-on voltage of the first MOSFET is generated on the capacitor using a low dropout linear regulator (LDO).

[0050] When the IGBT turn-on process begins, the software control module controls the gate voltage of the second MOSFET to become the turn-off voltage of the second MOSFET (0V), and applies the turn-on voltage of the first MOSFET to the gate of the first MOSFET, so that the turn-on voltage of the first MOSFET becomes the second voltage, wherein the second voltage is the sum of the turn-on voltage of the first MOSFET and the actual gate potential of the IGBT.

[0051] When the IGBT is turned on and the gate voltage of the IGBT is greater than the reference voltage, a charge pump is used to generate the turn-on voltage of the first MOSFET, so that the turn-on voltage of the first MOSFET is maintained at a first voltage, thereby keeping the IGBT in the turned-on state; wherein, the first voltage is the sum of the power module output voltage and the turn-on voltage of the first MOSFET;

[0052] When the IGBT turn-off process begins, the software control module controls the gate voltage of the first MOSFET to switch to the turn-off voltage of the first MOSFET, and applies the turn-on voltage of the second MOSFET to the gate of the second MOSFET, so that the gate voltage of the IGBT is reduced to 0V, and the turn-on voltage of the first MOSFET is reduced to the second voltage.

[0053] Preferably, the step of applying a steady-state voltage to the IGBT using the VE voltage generation module includes:

[0054] When the IGBT is turned off, a preset constant steady-state voltage is generated using the VE voltage generation module, and the steady-state voltage is applied to the emitter of the IGBT.

[0055] According to a third aspect of the present invention, an electronic device is provided, comprising: at least one processor and a memory; the memory and the processor are connected via a bus;

[0056] The memory is used to store one or more programs;

[0057] The method is implemented when the one or more programs are executed by the at least one processor.

[0058] According to a fourth aspect of the present invention, a readable storage medium is provided having an executable program stored thereon, wherein when the executable program is executed, the method is implemented.

[0059] The technical solution provided by this invention has the following beneficial effects:

[0060] This invention provides a current-driven digital gate drive device and its control method, comprising: a VE voltage generation module, a current drive module, and a MOSFET drive voltage generation module connected to an IGBT; and a software control module connected to each of the VE voltage generation module, the current drive module, and the MOSFET drive voltage generation module; the MOSFET drive voltage generation module and the current drive module are connected; the current drive module is used to adjust the current when the IGBT is turned on or off; the VE voltage generation module is used to apply a steady-state voltage to the IGBT when the IGBT is turned off; the MOSFET drive voltage generation module is used to provide the voltage required by the current drive module during the IGBT's turn-on and turn-off processes; and the software control module is used to control the voltage of the current drive module when the IGBT is turned on and off. This invention provides a technical solution that not only allows for highly flexible and precise adjustment of the current in time and magnitude throughout the entire IGBT turn-on and turn-off process, facilitating optimized IGBT switching curve control, but also reduces IGBT switching overshoot and switching losses. Furthermore, for different IGBT models, functional adaptation can be achieved simply by modifying the software code, without requiring hardware design modifications, thus shortening development time. Attached Figure Description

[0061] To more clearly illustrate the technical solutions in the embodiments of the present invention or the prior art, the drawings used in the description of the embodiments or the prior art will be briefly introduced below. Obviously, the drawings described below are only some embodiments of the present invention. For those skilled in the art, other drawings can be obtained based on these drawings without creative effort.

[0062] Figure 1 This is a structural block diagram of a current-mode digital gate driving device provided in an embodiment of the present invention;

[0063] Figure 2This is an example diagram of the internal circuit of the current drive module provided in an embodiment of the present invention;

[0064] Figure 3 This is a schematic diagram of the VE voltage generation module provided in an embodiment of the present invention;

[0065] Figure 4 This is a schematic diagram of the MOSFET drive voltage generation module provided in an embodiment of the present invention;

[0066] Figure 5 This is an example diagram of the software control module provided in an embodiment of the present invention;

[0067] Figure 6 This is a structural block diagram of an electronic device provided in an embodiment of the present invention. Detailed Implementation

[0068] To make the objectives, technical solutions, and advantages of this invention clearer, the technical solutions of this invention will be clearly and completely described below with reference to the accompanying drawings. Obviously, the following embodiments are only some embodiments of this invention, not all embodiments. Based on the embodiments of this invention, all other embodiments obtained by those skilled in the art without creative effort are within the scope of protection of this invention.

[0069] Example 1

[0070] This invention provides a current-mode digital gate driving device, such as... Figure 1 As shown, it includes: a VE voltage generation module, a current drive module, and a MOSFET drive voltage generation module connected to the IGBT, and a software control module connected to the VE voltage generation module, the current drive module, and the MOSFET drive voltage generation module respectively; the MOSFET drive voltage generation module and the current drive module are connected.

[0071] The current drive module is used to regulate the current when the IGBT is turned on or off.

[0072] The VE voltage generation module is used to apply a steady-state voltage to the IGBT when the IGBT is turned off.

[0073] The MOSFET drive voltage generation module is used to provide the voltage required by the current drive module during the IGBT turn-on and turn-off processes;

[0074] The software control module is used to control the voltage of the current drive module when the IGBT is turned on and off.

[0075] Furthermore, the device also includes a power supply module that is connected to the VE voltage generation module, the current drive module, the MOSFET drive voltage generation module, and the software control module, respectively.

[0076] The power supply module is used to supply power to the VE voltage generation module, current drive module, MOSFET drive voltage generation module, and software control module.

[0077] Furthermore, the device also includes: capacitor C g ;

[0078] Capacitor C g One end is connected to the MOSFET drive voltage generation module, and the other end is connected to the connection point between the current drive module and the IGBT.

[0079] Furthermore, the current drive module includes: multiple sets of MOSFETs; each set of MOSFETs includes: a first MOSFET and a second MOSFET;

[0080] The source of the first MOSFET in each group is connected to the drain of the second MOSFET;

[0081] The connection points between the first and second MOSFETs in all groups are interconnected and then connected to the gate of the IGBT.

[0082] The drains of the first MOSFETs are all connected to the power module;

[0083] The sources of the second MOSFETs are all grounded;

[0084] The gate of the first MOSFET is connected to both the MOSFET drive voltage generation module and the software control module.

[0085] The gate of the second MOSFET is connected to the software control module.

[0086] Furthermore, the first and second MOSFETs in each group of MOSFETs have the same width;

[0087] The widths of the MOSFETs in each group are proportional.

[0088] For example, such as Figure 2 As shown in the diagram, the pull-up MOS is the first MOS transistor, and the pull-down MOS is the second MOS transistor. Taking a 16-order adjustable current dual NMOS driving method as an example, according to the electrical characteristics of MOS transistors, the current magnitude is almost fixed when the MOS transistor is operating in the saturation region. This invention ensures that the MOS transistor operates in the saturation region throughout the entire IGBT turn-on and turn-off process. Furthermore, the saturation current of the MOS transistor operating in the saturation region is related to the MOS transistor size and gate-source voltage. In this invention, the gate-source voltage of the MOS transistor is kept consistent, and only the MOS transistor size is changed. With other parameters remaining constant, changing the device width W causes the MOS transistor current to change proportionally to W, i.e.:

[0089]

[0090] In the above formula, I mos1 I is the current of the first MOSFET. mos2 W is the current of the second MOSFET. mos1 W is the width of the first MOSFET. mos2 The width of the second MOSFET.

[0091] Figure 2 The current-driven module design shown uses different MOSFETs that differ only in width W. By controlling the switching modes of different MOSFETs, the IGBT can achieve 16 different adjustable currents during on / off cycles. These currents range from 0 to 15 times the saturation current of the smallest MOSFET width. Other MOSFET parameters can be modified according to the actual required current range.

[0092] This invention uses the saturation region of the MOSFET drive voltage generation module as a constant current source and uses multiple MOSFETs connected in parallel to achieve multi-stage high-precision current regulation, thereby realizing an IGBT drive method for high-precision current regulation of the IGBT switching process.

[0093] This invention, through a proportional dual NMOS transistor design and decoder control, can significantly reduce the number of control signal channels while achieving the same current order, thereby enabling the IGBT to be turned on and off.

[0094] Furthermore, such as Figure 3 As shown, the VE voltage generation module includes: a first operational amplifier;

[0095] The output of the first operational amplifier is connected to the emitter of the IGBT;

[0096] The positive input terminal of the first operational amplifier is connected to the VE reference voltage generation module, and the negative input terminal of the first operational amplifier is connected to the connection point between the output terminal of the first operational amplifier and the emitter of the IGBT.

[0097] It should be noted that the implementation method of the "VE reference voltage generation module" involved in the embodiments of the present invention is well known to those skilled in the art, therefore, its specific implementation method will not be described in detail. In some embodiments, it can be implemented by, but is not limited to, a reference voltage generation circuit, or by a resistor divider, a Zener diode, or a reference voltage chip, etc.

[0098] Furthermore, such as Figure 4 As shown, the MOSFET drive voltage generation module includes: a charge pump, a low-dropout linear regulator (LDO), and a second operational amplifier;

[0099] The output of the second operational amplifier is connected to a charge pump and a low-dropout linear regulator (LDO), respectively.

[0100] The positive input terminal of the second operational amplifier is connected to the gate of the IGBT, and the negative input terminal of the second operational amplifier is connected to the MOSFET drive reference voltage generation module.

[0101] After the charge pump is connected to the low-dropout linear regulator (LDO), it is connected to the gate of all the first MOSFETs.

[0102] One end of the capacitor is connected to the connection point between the positive input terminal of the second operational amplifier and the gate of the IGBT, and the other end is connected to the connection point between the charge pump and the low dropout linear regulator (LDO).

[0103] The positive input terminal of the second operational amplifier is connected to the gate of the IGBT and the current drive module, respectively.

[0104] It should be noted that the implementation of the "MOSFET drive reference voltage generation module" involved in the embodiments of the present invention is well known to those skilled in the art; therefore, its specific implementation will not be described in detail. Furthermore, the VE voltage generation module is specifically used for:

[0105] When the IGBT is turned off, a preset constant steady-state voltage V is generated. VE and the steady-state voltage V VE It is applied to the emitter of the IGBT.

[0106] Furthermore, the MOSFET drive voltage generation module is specifically used for:

[0107] When the IGBT has not started the turn-on process and the IGBT gate voltage is less than or equal to the reference voltage V ref At that time, a low-dropout linear regulator (LDO) is used to generate the turn-on voltage V of the first MOSFET across the capacitor. gs,MOSFET ;

[0108] When the IGBT is turned on and the gate voltage of the IGBT is greater than the reference voltage V ref At that time, a charge pump is used to generate the turn-on voltage of the first MOSFET, so that the turn-on voltage of the first MOSFET is maintained at the first voltage (i.e., VCC + V). gs,MOSFET This is to keep the IGBT on.

[0109] Wherein, the first voltage is the power module output voltage VCC and the turn-on voltage V of the first MOSFET. gs,MOSFET ) and.

[0110] Furthermore, the software control module is specifically used for:

[0111] When the IGBT turn-on process begins, the gate voltage of the second MOSFET is controlled to become its turn-off voltage (0V), and the turn-on voltage of the first MOSFET is applied to its gate, so that the turn-on voltage of the first MOSFET becomes the second voltage (i.e., V). gs,MOSFET +V G,IGBT ), where the second voltage is the turn-on voltage V of the first MOSFET. gs,MOSFET The actual gate potential V of the IGBT G,IGBT sum;

[0112] When the IGBT turn-off process begins, the gate voltage of the first MOSFET is switched to the turn-off voltage V of the first MOSFET. G,IGBT (That is, the turn-off voltage of the pull-up MOS is the gate potential of the IGBT), and the turn-on voltage V of the second MOS transistor is... gs,MOSFET An voltage is applied to the gate of the second MOSFET to reduce the gate voltage of the IGBT to 0V, and the turn-on voltage of the first MOSFET is reduced to the second voltage V. gs,MOSFET .

[0113] The software control module can be implemented in, but is not limited to, the following three ways:

[0114] The first type uses an FPGA or MCU for the software control module.

[0115] The second type, such as Figure 5 As shown, the software control module includes: an FPGA and a decoder;

[0116] The FPGA is connected to the decoder, and the decoder is connected to the MOSFET drive voltage generation module and the current drive module, respectively.

[0117] The third type is a software control module, which includes an MCU and a decoder;

[0118] The MCU is connected to the decoder, which in turn is connected to the MOSFET drive voltage generation module and the current drive module.

[0119] In some embodiments, the decoder may be, but is not limited to, a 4-16 decoder.

[0120] To further illustrate the aforementioned current-driven digital gate drive device, this invention provides a specific example, taking the adjustable current drive method of a 16-level current drive module as an example; methods for 32-level, 64-level, etc., can be deduced similarly. Figure 2As shown, the current drive module can employ an NMOS, PMOS pair, or dual NMOS structure. Taking dual NMOS as an example, the different MOSFETs differ only in width W, resulting in a multiple relationship between their saturation currents. By controlling this multiple relationship and selecting different MOSFETs for switching, 16 different IGBT switching current magnitudes can be achieved. Figure 2 The top row of MOSFETs is named pull-up MOSFETs, and the bottom row is named pull-down MOSFETs. Another method is to use 15 identical NMOS transistors, which can also achieve 16 levels of current adjustment. Furthermore, the actual current value is related to the MOSFET's gate drive voltage V. gs,MOSFET The relationship can be calculated based on the MOSFET saturation region operating current formula.

[0121] The power supply voltage VCC and GND potential of the current-mode digital gate drive device are used as the turn-on and turn-off voltages of the IGBT gate, respectively.

[0122] The function of the VE voltage generation module is to generate a constant steady-state voltage V. VE And apply it to the emitter of the IGBT so that when the IGBT is turned off, the gate of the IGBT is at GND potential and the emitter of the IGBT is at V. VE The voltage difference between the IGBT gate and the IGBT emitter is negative -V. VE .

[0123] like Figure 4 As shown, the MOSFET drive voltage generation module provides the MOSFET gate drive voltage during IGBT turn-on and turn-off. First, during the turn-on process, before the process begins, the IGBT gate voltage is 0V. The MOSFET drive voltage generation module determines the gate drive voltage based on the gate voltage comparison result (i.e., the IGBT gate voltage is less than or equal to the reference voltage V). ref It uses a low-dropout linear regulator (LDO) for power supply, generating a pull-up MOSFET turn-on voltage across capacitor Cg, with an initial value of V. gs,MOSFET After the turn-on process begins, the software control module adjusts the gate voltage of the pull-down MOS to its turn-off voltage of 0V, and applies the turn-on voltage of the pull-up MOS to its gate. The source of the pull-up MOS remains connected to the power supply potential. As the IGBT gate voltage rises, the voltage difference across capacitor Cg remains constant, and the turn-on voltage of the pull-up MOS becomes V. gs,MOSFET +V G,IGBT , where V G,IGBT This represents the actual gate potential of the IGBT. When the IGBT gate voltage exceeds the reference voltage Vref, the MOSFET drive voltage generation module switches to a charge pump to generate a pull-up MOSFET turn-on voltage, ultimately resulting in V... G,IGBTThe voltage rises to VCC (VCC is the output voltage of the power module), and the turn-on voltage of the pull-up MOSFET becomes VCC+V. gs,MOSFET The MOSFET drive voltage module maintains a constant turn-on voltage for the pull-up MOSFET through a charge pump and other boost circuits, keeping the IGBT in the on state. Then comes the turn-off process. At the start of the turn-off process, the gate voltage of the pull-up MOSFET switches to the turn-off voltage V of the pull-up MOSFET. G,IGBT That is, the turn-off voltage of the pull-up MOSFET is the gate potential of the IGBT, and the turn-on voltage V of the pull-down MOSFET is... gs,MOSFET A voltage is applied to the gate of the pull-down MOSFET, while the source of the pull-down MOSFET remains grounded. Eventually, the IGBT gate voltage drops to 0V, and the turn-on voltage of the pull-up MOSFET decreases to V. gs,MOSFET .

[0124] The software control module is implemented using embedded hardware devices such as FPGAs or MCUs. For each MOSFET in the current drive module, a corresponding signal is required for switching control, or a decoder chip can be used to reduce the number of ports on the FPGA or MCU chip. For the IGBT's turn-on or turn-off process, by modifying the software control module code, the current magnitude during the switching process can be precisely adjusted at any time. Through theoretical calculations and experimental feedback, the optimal IGBT switching process can ultimately be obtained.

[0125] The present invention provides a current-driven digital gate drive device, which is a precise current-regulated dual NMOS driven IGBT turn-on and turn-off control device. It can achieve precise adjustment of the current in time and magnitude throughout the entire IGBT turn-on and turn-off process with a high degree of freedom, which facilitates the optimization of IGBT switching curve control.

[0126] Example 2

[0127] The present invention also provides a control method for a current-mode digital gate driving device, applied to the current-mode digital gate driving device of Embodiment 1, characterized in that it includes:

[0128] When the IGBT is turned on and off, the MOSFET drive voltage generation module provides the voltage required by the current drive module during the IGBT's turn-on and turn-off process, and the software control module adjusts the current when the IGBT is turned on or off by controlling the voltage of the current drive module.

[0129] When the IGBT is turned off, a steady-state voltage is applied to the IGBT using the VE voltage generation module.

[0130] Furthermore, when the IGBT is turned on and off, the MOSFET drive voltage generation module provides the voltage required by the current drive module during the IGBT's turn-on and turn-off processes. The software control module regulates the current during IGBT turn-on or turn-off by controlling the voltage of the current drive module, including:

[0131] When the IGBT has not started the turn-on process and the gate voltage of the IGBT is less than or equal to the reference voltage, the turn-on voltage of the first MOSFET is generated on the capacitor using a low dropout linear regulator (LDO).

[0132] When the IGBT turn-on process begins, the software control module controls the gate voltage of the second MOSFET to become the turn-off voltage of the second MOSFET (0V), and applies the turn-on voltage of the first MOSFET to the gate of the first MOSFET, so that the turn-on voltage of the first MOSFET becomes the second voltage, wherein the second voltage is the sum of the turn-on voltage of the first MOSFET and the actual gate potential of the IGBT.

[0133] When the IGBT is turned on and the gate voltage of the IGBT is greater than the reference voltage, the charge pump generates the turn-on voltage of the first MOSFET, and keeps the turn-on voltage of the first MOSFET at the first voltage, so that the IGBT remains in the on state; wherein, the first voltage is the sum of the power module output voltage and the turn-on voltage of the first MOSFET.

[0134] When the IGBT turn-off process begins, the software control module controls the gate voltage of the first MOSFET to switch to the turn-off voltage of the first MOSFET, and applies the turn-on voltage of the second MOSFET to the gate of the second MOSFET, so that the gate voltage of the IGBT is reduced to 0V, and the turn-on voltage of the first MOSFET is reduced to the second voltage.

[0135] Furthermore, a steady-state voltage is applied to the IGBT using the VE voltage generation module, including:

[0136] When the IGBT is turned off, a preset constant steady-state voltage is generated using the VE voltage generation module, and the steady-state voltage is applied to the emitter of the IGBT.

[0137] It is understood that the method embodiments provided above correspond to the device embodiments described above, and the specific details can be referred to each other, which will not be repeated here.

[0138] It is understood that the same or similar parts in the above embodiments can be referred to each other, and the contents not described in detail in some embodiments can be referred to the same or similar contents in other embodiments.

[0139] Example 3

[0140] like Figure 6As shown, the present invention also provides an electronic device, which may be a computer device, a microcontroller device, a smart mobile device, etc. The electronic device in this embodiment may include a processor, a memory, a transceiver component, etc. The memory, processor, and transceiver component are connected via a bus; the memory can be used to store executable programs, and an exemplary executable program may include instructions; the processor is used to execute the instructions stored in the memory. The memory can also be used to store data, which can be accessed and / or modified when instructions are executed.

[0141] The processor may be a Central Processing Unit (CPU), or it may be other general-purpose processors, digital signal processors (DSPs), application-specific integrated circuits (ASICs), field-programmable gate arrays (FPGAs), or other programmable logic devices, discrete gate or transistor logic devices, discrete hardware components, etc. It is the computing core and control core of the terminal, and it is suitable for implementing one or more instructions. Specifically, it is suitable for loading and executing one or more instructions in the storage medium to implement the corresponding method flow or corresponding function, so as to implement the steps of the control method of a current-type digital gate driving device in the above embodiments.

[0142] Example 4

[0143] Based on the same inventive concept, this invention also provides a readable storage medium, specifically an electronic device readable storage medium (Memory). This readable storage medium is a memory device within an electronic device used to store programs and data. It is understood that the storage medium here can include both built-in storage media within the electronic device and extended storage media supported by the electronic device. The storage medium provides storage space, which stores the terminal's operating system. Furthermore, this storage space also stores one or more instructions suitable for loading and execution by a processor. These instructions can be one or more executable programs (including program code). It should be noted that the storage medium here can be high-speed RAM or non-volatile memory, such as at least one disk storage device. Loading and executing one or more instructions stored in the storage medium by the processor can implement the steps of the control method for a current-type digital gate driving device in the above embodiments.

[0144] Those skilled in the art will understand that embodiments of the present invention can be provided as methods, systems, or computer program products. Therefore, the present invention can take the form of a completely hardware embodiment, a completely software embodiment, or an embodiment combining software and hardware aspects. Furthermore, the present invention can take the form of a computer program product embodied on one or more computer-usable storage media (including, but not limited to, disk storage, CD-ROM, optical storage, etc.) containing computer-usable program code.

[0145] This invention is described with reference to flowchart illustrations and / or block diagrams of methods, apparatus (systems), and computer program products according to embodiments of the invention. It will be understood that each block of the flowchart illustrations and / or block diagrams, and combinations of blocks in the flowchart illustrations and / or block diagrams, can be implemented by computer program instructions. These computer program instructions can be provided to a processor of a general-purpose computer, special-purpose computer, embedded processor, or other programmable data processing apparatus to produce a machine, such that the instructions, which execute via the processor of the computer or other programmable data processing apparatus, generate instructions for implementing the flowchart illustrations and / or block diagrams. Figure 1 One or more processes and / or boxes Figure 1 A device that provides the functions specified in one or more boxes.

[0146] These computer program instructions may also be stored in a computer-readable storage medium that can direct a computer or other programmable data processing device to function in a particular manner, such that the instructions stored in the computer-readable storage medium produce an article of manufacture including instruction means, which are implemented in a process Figure 1 One or more processes and / or boxes Figure 1 The function specified in one or more boxes.

[0147] These computer program instructions may also be loaded onto a computer or other programmable data processing equipment to cause a series of operational steps to be performed on the computer or other programmable equipment to produce a computer-implemented process, thereby providing instructions that execute on the computer or other programmable equipment for implementing the process. Figure 1 One or more processes and / or boxes Figure 1 The steps of the function specified in one or more boxes.

[0148] Finally, it should be noted that the above embodiments are only used to illustrate the technical solutions of the present invention and not to limit it. Although the present invention has been described in detail with reference to the above embodiments, those skilled in the art should understand that modifications or equivalent substitutions can still be made to the specific implementation of the present invention. Any modifications or equivalent substitutions that do not depart from the spirit and scope of the present invention should be covered within the scope of protection of the claims of the present invention.

Claims

1. A current-driven digital gate driving device, characterized in that, include: A VE voltage generation module, a current drive module, and a MOSFET drive voltage generation module connected to an IGBT, and a software control module connected to the VE voltage generation module, the current drive module, and the MOSFET drive voltage generation module, respectively; The MOSFET drive voltage generation module and the current drive module are connected; The VE voltage generation module is used to apply a steady-state voltage to the IGBT when the IGBT is turned off; The MOSFET drive voltage generation module is used to provide the voltage required by the current drive module during the IGBT turn-on and turn-off processes. The software control module is used to adjust the current of the IGBT when it is turned on or off by controlling the voltage of the current drive module.

2. The apparatus according to claim 1, characterized in that, Also includes: A power supply module that is connected to the VE voltage generation module, the current drive module, the MOSFET drive voltage generation module and the software control module respectively; The power supply module is used to supply power to the VE voltage generation module, the current drive module, the MOSFET drive voltage generation module and the software control module.

3. The apparatus according to claim 2, characterized in that, Also includes: capacitance; One end of the capacitor is connected to the MOSFET drive voltage generation module, and the other end is connected to the connection point between the current drive module and the IGBT.

4. The apparatus according to claim 3, characterized in that, The current drive module includes: multiple sets of MOSFETs; each set of MOSFETs includes: a first MOSFET and a second MOSFET; In each group of MOSFETs, the source of the first MOSFET is connected to the drain of the second MOSFET. The connection points between the first MOSFET and the second MOSFET in all groups are interconnected and then connected to the gate of the IGBT. The drains of the first MOSFETs are all connected to the power module; The sources of the second MOSFET are all grounded; The gate of the first MOSFET is connected to both the MOSFET drive voltage generation module and the software control module. The gate of the second MOS transistor is connected to the software control module.

5. The apparatus according to claim 4, characterized in that, The first and second MOS transistors in each group have the same width; The widths of the MOSFETs in each group are proportional.

6. The apparatus according to claim 4, characterized in that, The VE voltage generation module includes: a first operational amplifier; The output terminal of the first operational amplifier is connected to the emitter of the IGBT; The positive input terminal of the first operational amplifier is connected to the VE reference voltage generation module, and the negative input terminal of the first operational amplifier is connected to the connection point between the output terminal of the first operational amplifier and the emitter of the IGBT.

7. The apparatus according to claim 6, characterized in that, The MOSFET drive voltage generation module includes: a charge pump, a low-dropout linear regulator (LDO), and a second operational amplifier; The output of the second operational amplifier is connected to both the charge pump and the low-dropout linear regulator (LDO). The positive input terminal of the second operational amplifier is connected to the gate of the IGBT, and the negative input terminal of the second operational amplifier is connected to the MOSFET drive reference voltage generation module. The charge pump is connected to the low dropout linear regulator (LDO) and then to the gates of all the first MOS transistors. One end of the capacitor is connected to the connection point between the positive input terminal of the second operational amplifier and the gate of the IGBT, and the other end is connected to the connection point between the charge pump and the low dropout linear regulator (LDO). The positive input terminal of the second operational amplifier is connected to the gate of the IGBT and the current drive module, respectively.

8. The apparatus according to claim 4, characterized in that, The VE voltage generating module is specifically used for: When the IGBT is turned off, a preset constant steady-state voltage is generated and applied to the emitter of the IGBT.

9. The apparatus according to claim 7, characterized in that, The MOSFET drive voltage generation module is specifically used for: When the IGBT has not started the turn-on process and the gate voltage of the IGBT is less than or equal to the reference voltage, the low dropout linear regulator (LDO) generates the turn-on voltage of the first MOS transistor on the capacitor. When the IGBT is turned on and the gate voltage of the IGBT is greater than the reference voltage, the charge pump is used to generate the turn-on voltage of the first MOS transistor and keep the turn-on voltage of the first MOS transistor at the first voltage so that the IGBT remains in the on state. Wherein, the first voltage is the sum of the output voltage of the power module and the turn-on voltage of the first MOSFET.

10. The apparatus according to claim 4, characterized in that, The software control module is specifically used for: When the IGBT turn-on process begins, the gate voltage of the second MOSFET is controlled to become the turn-off voltage of the second MOSFET, 0V, and the turn-on voltage of the first MOSFET is applied to the gate of the first MOSFET, so that the turn-on voltage of the first MOSFET becomes the second voltage, wherein the second voltage is the sum of the turn-on voltage of the first MOSFET and the actual gate potential of the IGBT. When the IGBT turn-off process begins, the gate voltage of the first MOSFET is switched to the turn-off voltage of the first MOSFET, and the turn-on voltage of the second MOSFET is applied to the gate of the second MOSFET so that the gate voltage of the IGBT is reduced to 0V, and the turn-on voltage of the first MOSFET is reduced to the second voltage.

11. The apparatus according to claim 1, characterized in that, The software control module uses an FPGA or an MCU.

12. The apparatus according to claim 1, characterized in that, The software control module includes: an FPGA and a decoder; The FPGA is connected to the decoder, and the decoder is connected to the MOSFET drive voltage generation module and the current drive module, respectively.

13. The apparatus according to claim 1, characterized in that, The software control module includes: an MCU and a decoder; The MCU is connected to the decoder, and the decoder is connected to the MOSFET drive voltage generation module and the current drive module, respectively.

14. A control method for a current-mode digital gate driving device, applied to the current-mode digital gate driving device according to any one of claims 1-13, characterized in that, include: When the IGBT is turned on and off, the MOSFET drive voltage generation module provides the voltage required by the current drive module during the IGBT's turn-on and turn-off process, and the software control module adjusts the current of the IGBT when it is turned on or off by controlling the voltage of the current drive module. When the IGBT is turned off, a steady-state voltage is applied to the IGBT using the VE voltage generation module.

15. The method according to claim 14, characterized in that, When the IGBT is turned on and off, the MOSFET drive voltage generation module provides the voltage required by the current drive module during the IGBT's turn-on and turn-off processes, and the software control module adjusts the current during IGBT turn-on or turn-off by controlling the voltage of the current drive module, including: When the IGBT has not started the turn-on process and the gate voltage of the IGBT is less than or equal to the reference voltage, the turn-on voltage of the first MOSFET is generated on the capacitor using a low dropout linear regulator (LDO). When the IGBT turn-on process begins, the software control module controls the gate voltage of the second MOSFET to become the turn-off voltage of the second MOSFET (0V), and applies the turn-on voltage of the first MOSFET to the gate of the first MOSFET, so that the turn-on voltage of the first MOSFET becomes the second voltage, wherein the second voltage is the sum of the turn-on voltage of the first MOSFET and the actual gate potential of the IGBT. When the IGBT is turned on and the gate voltage of the IGBT is greater than the reference voltage, a charge pump is used to generate the turn-on voltage of the first MOSFET, so that the turn-on voltage of the first MOSFET is maintained at a first voltage, thereby keeping the IGBT in the turned-on state; wherein, the first voltage is the sum of the power module output voltage and the turn-on voltage of the first MOSFET; When the IGBT turn-off process begins, the software control module controls the gate voltage of the first MOSFET to switch to the turn-off voltage of the first MOSFET, and applies the turn-on voltage of the second MOSFET to the gate of the second MOSFET, so that the gate voltage of the IGBT is reduced to 0V, and the turn-on voltage of the first MOSFET is reduced to the second voltage.

16. The method according to claim 14, characterized in that, The method of applying a steady-state voltage to the IGBT using the VE voltage generation module includes: When the IGBT is turned off, a preset constant steady-state voltage is generated using the VE voltage generation module, and the steady-state voltage is applied to the emitter of the IGBT.

17. An electronic device, characterized in that, include: At least one processor and memory; The memory and processor are connected via a bus; The memory is used to store one or more programs; When the one or more programs are executed by the at least one processor, the control method of the current-mode digital gate drive device as described in any one of claims 14 to 16 is implemented.

18. A readable storage medium, characterized in that, It contains an executable program, which, when executed, implements the control method of the current-type digital gate drive device as described in any one of claims 14 to 16.

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