Ultra-high speed single crystal SiGe quantum base region HBT device and manufacturing method thereof

Abstract

The application discloses an ultra-high-speed single-crystal SiGe quantum base region HBT device and a manufacturing method thereof. The method comprises the following steps: providing a SEG pre-structure with a self-aligned base region window; forming a first HBT base region of bulk SiGe material by using a SEG process; separating Si-Ge phases in the bulk SiGe material of the first HBT base region to form a second HBT base region of a polycrystalline SiGe quantum dot structure; recrystallizing the polycrystalline SiGe quantum dot region of the second HBT base region to form a third HBT base region of a single-crystal SiGe quantum dot structure; performing an emitter deposition process and a metallization process to obtain the ultra-high-speed single-crystal SiGe quantum base region HBT device. The single-crystal SiGe quantum dot base region is realized in the self-aligned HBT, the hole mobility can be greatly improved by using the quantum confinement effect, the base region transit time is shortened, and the device cutoff frequency is significantly improved.

Description

Technical Field

[0001] This invention relates to the field of semiconductor device manufacturing, specifically to an ultra-high-speed single-crystal SiGe quantum-based HBT device and its fabrication method. Background Technology

[0002] With the rapid development of sixth-generation (6G) communication, millimeter-wave radar, terahertz imaging, and ultra-high-speed mixed-signal integrated circuits, the operating frequencies of their main active devices are approaching the physical limits of traditional silicon-based technology. Among heterojunction bipolar transistors (HBTs), silicon-germanium (SiGe) HBTs have become one of the core devices in the RF and millimeter-wave fields due to their excellent high-frequency characteristics, good low-temperature performance, and high compatibility with standard CMOS processes. However, when the characteristic frequency... f T As we move towards 500 GHz and above, traditional bulk SiGe base structures reveal three major bottlenecks: 1. The contradiction between mobility and Ge composition Increasing the Ge composition in the SiGe base region can effectively narrow the bandgap and shorten the base region transit time, but at the same time it will intensify the scattering of SiGe materials, causing the hole mobility to decrease instead of increase, forming an inherent double contradiction between gain and velocity.

[0003] 2. Base region resistance dimensional limit The bulk SiGe base region with uniform or gradually varying composition cannot reduce the resistance by infinitely shrinking the material size, making it difficult to break through the injection efficiency of base region carriers, and thus the characteristic frequency limit of HBT devices.

[0004] 3. Thermal stability and integration challenges with high Ge composition High-Ge-content SiGe bulk films are highly susceptible to Si-Ge phase separation and dislocation nucleation during subsequent thermal processes, leading to increased leakage current and deteriorated noise in devices. More critically, there is currently a lack of an effective method in existing self-aligned HBT structures to integrate SiGe base regions in a controllable manner with high Ge content and high crystal quality.

[0005] To date, the industry still lacks a feasible solution that combines a high-quality single-crystal SiGe quantum dot substrate with a self-aligned HBT process. Existing technologies generally cannot simultaneously meet the three major requirements of crystal quality, quantum dot controllability, and thermal process compatibility. Therefore, there is an urgent need to develop an ultra-high-speed HBT device and its fabrication method that can realize a single-crystal SiGe quantum dot substrate and is compatible with existing self-aligned structures, in order to break through the characteristic frequency limit of traditional bulk HBTs. Summary of the Invention

[0006] To address the shortcomings of the existing technologies, the technical problem to be solved by this invention is to provide an ultra-high-speed single-crystal SiGe quantum dot HBT device and its fabrication method, so as to solve the technical problems of the traditional bulk SiGe HBT base region in high-frequency applications, such as the contradiction between mobility and Ge composition, lack of quantum confinement effect, poor thermal stability under high Ge composition, and difficulty in integrating high-quality quantum dot base regions, thereby achieving a significant increase in the operating frequency of the device.

[0007] To solve the above-mentioned technical problems, the present invention provides the following technical solution: A method for fabricating an ultra-high-speed single-crystal SiGe quantum-based HBT device includes the following steps: S100, Provides a SEG front structure with a self-aligned base region window; S200: Using the SEG process, deposit bulk SiGe material in the self-aligned base region window of the SEG front structure to form the first HBT base region, and obtain the first sample; S300: Separate the Si-Ge phase in the bulk SiGe material of the first HBT base region to form a second HBT base region with a polycrystalline SiGe quantum dot structure, and obtain the second sample; S400, recrystallize the polycrystalline SiGe quantum dot region of the second HBT base region to form the third HBT base region of the single-crystal SiGe quantum dot structure, and obtain the third sample; S500. The third sample is subjected to emitter deposition and metallization processes to obtain an ultra-high-speed single-crystal SiGe quantum-based HBT device.

[0008] Furthermore, the SEG front structure includes a substrate and a silicon collector epitaxial layer, a TEOS layer, a polysilicon outer base region, and an EB junction dielectric isolation layer sequentially disposed on the substrate. A first window is formed at the TEOS layer, and a second window is formed at the position corresponding to the first window at the position of the polysilicon outer base region and the EB junction dielectric isolation layer, so that the first window and the second window are connected. The first and second windows together form a self-aligned base region window.

[0009] Furthermore, step S100 includes the following sub-steps: S110, adopt the SEG pre-structure; S120. Perform standard RCA cleaning on the SEG pre-construction structure; S130. Place the cleaned SEG pre-structure in the reaction chamber for SICONI pretreatment.

[0010] Furthermore, in step S200, a bulk Si with a silicon-germanium composition ratio of 1:1 is fabricated in the self-aligned base region window of the SEG front structure using a selective epitaxial process. 0.5 Ge 0.5The thin film forming SiGe HBT base region structure serves as the first HBT base region.

[0011] Furthermore, in step S200, selective epitaxial formation of Si is employed. 0.5 Ge 0.5 For thin film epitaxy, the Si source precursor gas source used is DCS, and the Ge source precursor gas source used is 1% GeH4 mixed with H2 gas. The epitaxial pressure is 10~30 Torr, and the epitaxial temperature is stable at 550~620 ℃.

[0012] Furthermore, in step S300, the structure of the selectively epitaxially fabricated bulk SiGe HBT base region is subjected to an in-situ thermal annealing process to separate the Si-Ge phase in the bulk SiGe material, forming a polycrystalline SiGe quantum dot HBT base region structure as the second HBT base region.

[0013] Furthermore, in step S300, the temperature of the in-situ hot annealing process is 950~1000 ℃, and the annealing time is 25~35 min.

[0014] Furthermore, in step S400, a laser irradiation process is used on the polycrystalline SiGe quantum dot structure to cause the polycrystalline SiGe quantum dot to undergo zone melting and recrystallization, forming a single-crystal SiGe quantum dot structure with an HBT base region structure as the third HBT base region.

[0015] Furthermore, in step S400, an excimer laser is used for laser irradiation, with a pulse frequency of 5~15Hz and a total pulse duration of 3~8 min.

[0016] An ultra-high-speed single-crystal SiGe quantum-based HBT device is fabricated using the ultra-high-speed single-crystal SiGe quantum-based HBT device fabrication method described in any of the above claims.

[0017] Compared with the prior art, the present invention has the following beneficial effects: 1. Ultra-high speed performance: By forming a single-crystal SiGe quantum dot base region, the hole mobility is greatly improved by utilizing the quantum confinement effect, and the base region transit time is shortened, thereby obtaining a higher cutoff frequency and oscillation frequency to meet the needs of ultra-high speed applications such as 6G communication and terahertz imaging.

[0018] 2. High-quality single-crystal structure: By adopting a process of bulk SiGe epitaxy, in-situ thermal annealing phase separation to form polycrystalline quantum dots, and laser irradiation recrystallization, high-quality single-crystal SiGe quantum dots were fabricated within the self-aligned base region window, avoiding the dislocation and leakage problems of traditional high-Ge bulk thin films.

[0019] 3. Excellent self-alignment compatibility: The entire process is based on a self-aligned SEG front structure, eliminating the need for additional photolithography alignment steps. The formation and recrystallization of quantum dots are completed within the existing window, effectively controlling parasitic parameters and improving device consistency and yield.

[0020] 4. Thermal budget friendly: Laser irradiation process has the characteristics of local and rapid heating, which only melts and recrystallizes the quantum dot region, and has minimal thermal impact on other areas of the device (such as emitter, collector, and isolation medium), and is compatible with the thermal budget of standard CMOS back-end.

[0021] 5. Strong process controllability: By precisely controlling the epitaxial composition, annealing temperature and time, and laser pulse parameters, the size, density, and crystal quality of quantum dots can be adjusted, providing a flexible technical means for further optimization of device performance. Attached Figure Description

[0022] The accompanying drawings, which are included to provide a further understanding of this application and form part of this application, illustrate exemplary embodiments and are used to explain this application, but do not constitute an undue limitation of this application. In the drawings: Figure 1 This is a process flow diagram illustrating an embodiment of the ultra-high-speed single-crystal SiGe quantum-based HBT device of the present invention.

[0023] Figure 2 This is a cross-sectional schematic diagram of the SEG pre-construction structure.

[0024] Figure 3 This is a schematic diagram of the structure of the first sample after the formation of the first HBT base region.

[0025] Figure 4 This is a schematic diagram of the in-situ hot annealing process in step S300.

[0026] Figure 5 This is a schematic diagram of the structure of the second sample formed after thermal annealing, which is a polycrystalline SiGe quantum dot.

[0027] Figure 6 This is a schematic diagram of the laser irradiation process for polycrystalline SiGe quantum dots.

[0028] Figure 7 This is a schematic diagram of the structure of the third sample, which forms single-crystal SiGe quantum dots after laser irradiation.

[0029] Figure 8 This is a schematic diagram of the final device structure after emitter deposition and metallization processes.

[0030] The diagrams in the instruction manual are labeled as follows: SEG front structure 100; silicon substrate 110; silicon collector epitaxial layer 120; TEOS layer 130; polysilicon outer base region 140; EB junction dielectric isolation layer 150; base region window 160; first window 161; second window 162; first sample 200; first HBT base region 210; second HBT base region 220; third HBT base region 230; second sample 300; emitter 310; third sample 400; emitter metal 410. Detailed Implementation

[0031] To make the objectives, technical solutions, and advantages of this invention clearer, the invention will be further described in detail below with reference to the accompanying drawings and specific embodiments. It should be noted that the following embodiments are only for explaining the invention and do not constitute a limitation on the scope of protection of this invention.

[0032] Example 1 like Figure 1 As shown, this embodiment provides a method for fabricating an ultra-high-speed single-crystal SiGe quantum-based HBT device, including the following steps: Step S100: As Figure 2 As shown, a SEG (Selective Epitaxial Growth) pre-structure 100 with a self-aligned base region window (hereinafter referred to as base region window 160) is provided. Specifically, this structure includes a silicon substrate 110 and a silicon collector epitaxial layer 120, a TEOS (Tetraethyl orthosilicate) layer 130, a polysilicon outer base region 140, and an EB junction dielectric isolation layer 150 sequentially disposed on the silicon substrate 110. A first window 161 is formed on the TEOS layer 130; a second window 162 is formed on the polysilicon outer base region 140 and the EB junction dielectric isolation layer 150 at a position corresponding to the first window 161; the size of the second window 162 can be smaller than the first window 161. The first window 161 and the second window 162 are connected, together forming the base region window 160. In this embodiment, the EB junction dielectric isolation layer 150 preferably adopts a SiN / OX / SiN three-layer structure with a thickness of 30~50nm, thereby possessing good isolation performance and stress matching characteristics.

[0033] This step may further include preprocessing of the SEG pre-structure 100, which may include the following sub-steps: S110: Take the above-mentioned SEG pre-structure 100.

[0034] S120: Perform standard RCA cleaning on the SEG pre-construction structure 100 to remove surface particles and organic contaminants.

[0035] S130: The cleaned SEG pre-structure 100 is placed in the reaction chamber for SICONI pretreatment to further remove the natural oxide layer at the bottom of the base region window 160, providing a clean surface for selective epitaxial growth.

[0036] Step S200: Using SEG process to form bulk Si in the base region window 160 of the SEG front structure. 0.5 Ge 0.5 The first HBT base region 210 of the material yields the first sample 200. The bulk SiGe material can be a bulk SiGe material with a silicon-germanium ratio of 1:1. 0.5 Ge 0.5 Material.

[0037] like Figure 3 As shown, within the base region window 160 of the SEG front structure 100, bulk Si with a silicon-germanium composition ratio of 1:1 can be deposited using selective epitaxy (SEG) technology. 0.5 Ge 0.5 The material is used as the first HBT base region 210 to obtain the first sample 200. Specific process conditions are as follows: Si source precursor gas source: DCS (SiH2Cl2), flow rate 50~100 sccm.

[0038] Ge source precursor gas source: 1% GeH4 and H2 mixed gas, flow rate of 200~450 sccm.

[0039] External pressure: 10~30 Torr, preferably 20 Torr.

[0040] Epitaxial temperature: 550~620℃, preferably 580℃.

[0041] Growth time: Adjusted according to the thickness of the target substrate (20~50 nm).

[0042] Under the above conditions, Si with a silicon-germanium ratio of 1:1 was selectively grown within the base region window 160. 0.5 Ge 0.5 A bulk thin film is formed to create a bulk SiGe base region structure as the first HBT base region 210. Due to selective epitaxy, the SiGe material is deposited only on the exposed silicon surface (i.e., the first window 161) and does not grow on the dielectric sidewalls, achieving good self-alignment characteristics.

[0043] Step S300: Separate the Si-Ge phase in the bulk SiGe material of the first HBT base region 210 to form the second HBT base region 220 of the polycrystalline SiGe quantum dot structure, and obtain the second sample 300.

[0044] like Figure 4As shown, the first sample 200 obtained in step S200 undergoes an in-situ thermal annealing process. This in-situ thermal annealing process is carried out within the reaction chamber without removing the sample.

[0045] like Figure 5 As shown, after in-situ thermal annealing, the bulk SiGe material with a silicon-germanium ratio of 1:1 in the first HBT base region 210 undergoes Si-Ge phase separation, spontaneously forming a second HBT base region 220 with a polycrystalline SiGe quantum dot structure, resulting in the second sample 300. Specific process conditions are as follows: Annealing temperature: 950~1000℃, preferably 980℃.

[0046] Annealing time: 25~35 min, preferably 30 min.

[0047] Annealing atmosphere: inert gas (such as N2 or Ar), flow rate of 20~25 slm.

[0048] Heating rate: 10~20 ℃ / s.

[0049] After prolonged annealing at this temperature, Si 0.5 Ge 0.5 In the bulk thin film, Si and Ge atoms diffuse and redistribute. Due to the limited solid solubility of Ge in Si, Ge atoms aggregate to form Ge-rich nanoscale domains, surrounded by Si-rich regions. These Ge-rich nanoscale domains are polycrystalline SiGe quantum dots, typically 5–15 nm in size, with a density of approximately 1 × 10¹¹ to 1 × 10¹² cm⁻¹. - ².

[0050] Step S400: Recrystallize the polycrystalline SiGe quantum dot region of the second HBT base region 220 to form the third HBT base region 230 of the single-crystal SiGe quantum dot structure, and obtain the third sample 400.

[0051] like Figure 6 As shown, the polycrystalline SiGe quantum dots in the second sample 300 obtained in step S300 are subjected to laser irradiation to recrystallize the polycrystalline SiGe quantum dots by zone melting (i.e., regional melting).

[0052] like Figure 7 As shown, after laser irradiation, the polycrystalline SiGe quantum dots of the second HBT base region 220 recrystallize to form the third HBT base region 230 of a single-crystal SiGe quantum dot structure, resulting in the third sample 400. Specific process conditions are as follows: Laser type: excimer laser (e.g., KrF, wavelength 248 nm).

[0053] Pulse frequency: 5~15 Hz, preferably 10 Hz.

[0054] Total pulse duration: 3~8 min, preferably 5 min.

[0055] Laser energy density: 200~400 mJ / cm², which can be optimized according to the SiGe quantum dot thickness and substrate thermal properties.

[0056] Substrate temperature: room temperature to 200 °C (with optional heating assistance).

[0057] During laser irradiation, the polycrystalline SiGe quantum dot region rapidly heats up above its melting point (SiGe melting point is approximately 938~1300℃, depending on the Ge composition) due to the absorption of laser energy, resulting in localized melting. Because the laser pulse duration is extremely short (nanosecond level), the heat is confined to the quantum dot region and its immediate vicinity, preventing significant thermal damage to the underlying silicon collector epitaxial layer 120, EB junction dielectric isolation layer 150, and sidewall structures. After the pulse ends, the molten SiGe cools rapidly, and liquid-phase epitaxial recrystallization occurs using the surface of the bottom silicon collector epitaxial layer 120 as a seed crystal, forming high-quality single-crystal SiGe quantum dots as the third HBT base region 230, which is the final base region structure of the HBT device.

[0058] The key advantage of this step is that laser recrystallization only acts on the quantum dot region, without damaging the dielectric sidewall structure of the self-aligned base region window, and has an extremely low thermal budget (the equivalent thermal budget is much lower than that of traditional furnace tube annealing), which makes it highly compatible with downstream processes.

[0059] Step S500: As Figure 8 As shown, the third sample 400 obtained in step S400 is subjected to emitter deposition and metallization processes to obtain an ultra-high-speed single-crystal SiGe quantum-based HBT device.

[0060] Specifically, firstly, a heavily doped As single-crystal emitter material is deposited using RPCVD (Reduced Pressure Chemical Vapor Deposition) with a thickness of 100–120 nm. After deposition, the emitter pattern is defined by photolithography and etching to form the emitter 310. The bottom of the emitter should completely cover the base region window 160 and form good contact with the single-crystal SiGe quantum dots. Subsequently, emitter annealing is performed to activate the doped impurities and form an ideal heterojunction band structure at the emitter / base region interface.

[0061] Then, a metallization process is performed to form an emitter metal electrode 410 on the emitter 310. Additionally, a base metal electrode is formed on the polysilicon outer base region 140, and a collector metal electrode is formed in the collector lead-out region 120. Afterwards, a metallized interconnect layer and a passivation layer are deposited. The pad windows are then opened using photolithography and etching, completing all the fabrication steps of the ultra-high-speed single-crystal SiGe quantum base region HBT device, resulting in a complete device structure. The final device structure is shown below. Figure 8 As shown. These are all standard HBT device manufacturing processes, which will not be elaborated upon here.

[0062] In this embodiment, the main processes (epitaxy growth of bulk SiGe, phase separation thermal annealing, and laser recrystallization) are all performed based on a self-aligned base region window. The entire process requires no additional high-precision photolithography alignment steps, nor complex dielectric planarization or chemical mechanical polishing. This highly self-aligned process not only effectively reduces process complexity and manufacturing costs but also ensures precise positioning between the quantum dot base region and the collector and outer base regions, minimizing parasitic resistance and capacitance from a device structure perspective, thus providing structural assurance for high-frequency performance. By first forming polycrystalline quantum dots and then melting and recrystallizing them in a stepwise manner, effective control over the characteristics of single-crystal SiGe quantum dots is achieved. On the one hand, by precisely controlling the Si in step S200... 0.5 Ge 0.5 The thickness of the thin film and the epitaxial conditions, as well as the thermal annealing temperature and time in step S300, can control the nucleation density and size distribution of polycrystalline quantum dots. On the other hand, by adjusting the energy density and pulse parameters of laser irradiation in step S400, the range of the molten region and the recrystallization kinetics can be precisely controlled, thereby obtaining a single-crystal quantum dot array whose size, position, and crystal quality all meet the design requirements. This step-by-step controllable process provides ample technical opportunities for further optimization of device performance.

[0063] This embodiment effectively solves the technical challenge of phase separation and dislocation nucleation in high-Ge-content SiGe materials during subsequent high-temperature processes. Traditional bulk SiGe substrates require increased Ge content to achieve high mobility, but high-temperature processes can lead to material degradation. This embodiment utilizes the localized, rapid heating characteristics of laser irradiation to achieve instantaneous high-temperature melting and recrystallization only in the quantum dot region, with minimal thermal impact on the emitter, base sidewalls, isolation dielectric, and other areas of the device. This low-temperature back-end process allows for the stable integration of high-Ge-content single-crystal quantum dot substrates into the device, avoiding the performance degradation risk caused by global high-temperature heat treatment of high-Ge-content bulk films.

[0064] Example 2 This embodiment is basically the same as Embodiment 1, except that in step S400, the laser annealing (i.e., laser irradiation process) uses an XeCl excimer laser (wavelength 308 nm), with a pulse frequency of 15 Hz, a total time of 8 min, and a laser energy density of 350 mJ / cm². These conditions are suitable for cases with high Ge content or small quantum dot size, and help to obtain a more complete recrystallization effect.

[0065] Example 3 The present invention also discloses an ultra-high-speed single-crystal SiGe quantum-based HBT device, which is fabricated using the ultra-high-speed single-crystal SiGe quantum-based HBT device fabrication method of any of the above embodiments.

[0066] Please continue reading. Figure 8 The ultra-high-speed single-crystal SiGe quantum base region HBT device of this embodiment includes a silicon substrate 110 and a silicon collector epitaxial layer 120, a TEOS layer 130, a polycrystalline silicon outer base region 140, an EB junction dielectric isolation layer 150, an emitter 310, and a metal electrode arranged sequentially upwards. A first window 161 is formed at the TEOS layer 130, and a second window 162 is formed at the position corresponding to the first window at the polycrystalline silicon outer base region 140 and the EB junction dielectric isolation layer 150, so that the first window 161 and the second window 162 are connected to form a self-aligned base region window (i.e., base region window 160).

[0067] The bottom of the base region window 160 is formed with a single-crystal SiGe quantum dot in contact with the silicon collector epitaxial layer 120, and the single-crystal SiGe quantum dot forms the third HBT base region 230 (i.e., the base region of the HBT). The emitter 310 covers the base region window 160 and is in contact with the single-crystal SiGe quantum dot; the metal electrode is formed by a metallization process and includes an emitter metal electrode 410 connected to the emitter 310, a base metal electrode connected to the base (polycrystalline silicon outer base region 140), and a collector metal electrode connected to the collector (silicon collector epitaxial layer 120 or the back side of silicon substrate 110).

[0068] The above embodiments merely illustrate preferred implementations of the present invention, and while the descriptions are specific and detailed, they should not be construed as limiting the scope of the invention. It should be noted that those skilled in the art can make various modifications and improvements without departing from the concept of the present invention, and these all fall within the protection scope of the present invention. Therefore, the protection scope of this invention should be determined by the appended claims.

Claims

1. A method for fabricating an ultra-high-speed single-crystal SiGe quantum-based HBT device, characterized in that, Includes the following steps: S100, Provides a SEG front structure with a self-aligned base region window; S200: Using the SEG process, deposit bulk SiGe material in the self-aligned base region window of the SEG front structure to form the first HBT base region, and obtain the first sample; S300: Separate the Si-Ge phase in the bulk SiGe material of the first HBT base region to form a second HBT base region with a polycrystalline SiGe quantum dot structure, and obtain the second sample; S400, recrystallize the polycrystalline SiGe quantum dot region of the second HBT base region to form the third HBT base region of the single-crystal SiGe quantum dot structure, and obtain the third sample; S500. The third sample is subjected to emitter deposition and metallization processes to obtain an ultra-high-speed single-crystal SiGe quantum-based HBT device.

2. The method for fabricating an ultra-high-speed single-crystal SiGe quantum-based HBT device as described in claim 1, characterized in that: The SEG front structure includes a substrate and a silicon collector epitaxial layer, a TEOS layer, a polysilicon outer base region, and an EB junction dielectric isolation layer sequentially disposed on the substrate. A first window is formed at the TEOS layer, and a second window is formed at the position corresponding to the first window at the position of the polysilicon outer base region and the EB junction dielectric isolation layer, so that the first window and the second window are connected. The first and second windows together form a self-aligned base region window.

3. The method for fabricating an ultra-high-speed single-crystal SiGe quantum-based HBT device as described in claim 1, characterized in that, Step S100 includes the following sub-steps: S110, adopt the SEG pre-positioning structure; S120. Perform standard RCA cleaning on the SEG pre-construction structure; S130. Place the cleaned SEG pre-structure in the reaction chamber for SICONI pretreatment.

4. The method for fabricating an ultra-high-speed single-crystal SiGe quantum-based HBT device as described in claim 1, characterized in that, In step S200, a bulk Si with a silicon-germanium composition ratio of 1:1 is fabricated in the self-aligned base region window of the SEG front structure using a selective epitaxial process. 0.5 Ge 0.5 The thin film forming SiGe HBT base region structure serves as the first HBT base region.

5. The method for fabricating an ultra-high-speed single-crystal SiGe quantum-based HBT device as described in claim 4, characterized in that: In step S200, selective epitaxial formation of Si is employed. 0.5 Ge 0.5 For thin film epitaxy, the Si source precursor gas source used is DCS, and the Ge source precursor gas source used is 1% GeH4 mixed with H2 gas. The epitaxial pressure is 10~30 Torr, and the epitaxial temperature is stabilized at 550~620 ℃.

6. The method for fabricating an ultra-high-speed single-crystal SiGe quantum-based HBT device as described in claim 1, characterized in that, In step S300, the structure of the selectively epitaxially manufactured bulk SiGe HBT base region is subjected to in-situ thermal annealing to separate the Si-Ge phase in the bulk SiGe material and form a polycrystalline SiGe quantum dot HBT base region structure as the second HBT base region.

7. The method for fabricating an ultra-high-speed single-crystal SiGe quantum-based HBT device as described in claim 6, characterized in that: In step S300, the temperature of the in-situ hot annealing process is 950~1000 ℃, and the annealing time is 25~35 min.

8. The method for fabricating an ultra-high-speed single-crystal SiGe quantum-based HBT device as described in claim 1, characterized in that: In step S400, a laser irradiation process is used to re-crystallize the polycrystalline SiGe quantum dot structure by zone melting, forming a single-crystal SiGe quantum dot structure with an HBT base region structure as the third HBT base region.

9. The method for fabricating an ultra-high-speed single-crystal SiGe quantum-based HBT device as described in claim 8, characterized in that: In step S400, an excimer laser is used for laser irradiation, with a pulse frequency of 5~15 Hz and a total pulse duration of 3~8 min.

10. A high-speed single-crystal SiGe quantum-based HBT device, characterized in that: It is fabricated using the ultra-high-speed single-crystal SiGe quantum-based HBT device fabrication method as described in any one of claims 1 to 9.

Images