Method of forming conductive via structures and apparatuses therefor

Abstract

The present application provides a forming method and apparatus of conductive via structure. The forming method of conductive via structure includes: providing a substrate with a plurality of holes in a predetermined arrangement pattern. Then, adjusting a plurality of feeding components of a feeding module according to the predetermined arrangement pattern of the plurality of holes, so that the plurality of feeding components of the feeding module correspond to the plurality of holes of the substrate respectively. Then, providing a plurality of conductive materials into the plurality of holes through the plurality of feeding components respectively. And, solidifying the plurality of conductive materials into a plurality of conductive via structures through a solidifying module respectively. In this way, the efficiency, maneuverability and convenience of the conductive via structure manufacturing process are improved.

Description

Technical Field

[0001] This application relates to a method and apparatus for forming a conductive through-hole structure, and more particularly to a method and apparatus for forming a conductive through-hole structure with a predetermined pattern arrangement. Background Technology

[0002] In the field of semiconductor substrate technology, there is a need to form conductive pillars in vias or blind holes of the substrate. However, with the development of semiconductor manufacturing technology, substrate layouts are becoming increasingly complex, and existing techniques for forming conductive pillars are gradually becoming inadequate.

[0003] Therefore, how to overcome the above-mentioned defects through technological improvements has become one of the important issues that this project aims to address. Summary of the Invention

[0004] The technical problem to be solved by this application is to provide a method for forming a conductive via structure, which addresses the shortcomings of the prior art. The method includes: providing a substrate having a plurality of holes arranged in a predetermined pattern; adjusting a plurality of feeding components of a feeding module according to the predetermined pattern of the plurality of holes, such that the plurality of feeding components of the feeding module correspond to the plurality of holes of the substrate respectively; supplying a plurality of conductive materials to the plurality of holes respectively through the plurality of feeding components; and curing the plurality of conductive materials into a plurality of conductive via structures through a curing module.

[0005] Optionally, the method for forming a conductive via structure further includes: obtaining parameter information of multiple holes through an image extraction module, and transmitting the parameter information to a control module for analysis; wherein the parameter information includes the position and size information of each hole, as well as the spacing information between every two adjacent holes.

[0006] Optionally, the curing module includes multiple laser components configured to provide multiple laser beams to multiple holes to cure multiple conductive materials into multiple conductive through-hole structures.

[0007] Optionally, the curing module includes at least one heating component configured to heat a plurality of conductive materials to cure the plurality of conductive materials into a plurality of conductive through-hole structures.

[0008] Optionally, the method for forming the conductive through-hole structure further includes: controlling the output of each feeding component based on the size information of each hole using a control module.

[0009] Optionally, the method for forming the conductive via structure further includes: monitoring the substrate in real time using a monitoring module to monitor the filling or curing of multiple conductive materials in multiple holes.

[0010] Optionally, the step of real-time monitoring of the substrate by the monitoring module further includes: emitting at least one first laser detection beam and at least one second laser detection beam toward the substrate through an emitting component; receiving a reflected light from the substrate through the at least one first laser detection beam via a first sensor to generate a reflected signal; receiving a transmitted light from the substrate through the at least one second laser detection beam via a second sensor to generate a transmitted signal; and receiving the reflected signal and generating a first detection image through an image processing component, and receiving the transmitted signal and generating a second detection image; wherein the wavelength range of the at least one first laser detection beam and the at least one second laser detection beam is 300 nm to 2000 nm, and the pulse width range of the at least one first laser detection beam and the at least one second laser detection beam is 50 fs to 50 ns.

[0011] Optionally, the image processing component is a waveform generator, the first sensor and the second sensor are a light wavefront sensor, the first detection image is a first detection waveform, and the second detection image is a second detection waveform.

[0012] Optionally, the first sensor and the second sensor are a laser vibrometer, the reflected signal is a reflected ultrasonic wave, the transmitted signal is a transmitted ultrasonic wave, the first detection data is a first waveform, and the second detection data is a second waveform.

[0013] Optionally, the first sensor and the second sensor are photoelastic sensors, the first detection data is a first stress distribution feature map, and the second detection data is a second stress distribution feature map.

[0014] Optionally, the first sensor and the second sensor are a hyperspectral sensor, the image processing component is a hyperspectral generator, the first detection image is a first detection spectrum, the second detection image is a second detection spectrum, and the spectrum received by the hyperspectral sensor is a continuous spectrum with a spectral range between 300 nm and 2500 nm.

[0015] To address the aforementioned problems, another technical approach employed in this application is to provide a forming apparatus for conductive through-hole structures, comprising: a feeding module having multiple feeding components configured to respectively supply multiple conductive materials to multiple holes in a substrate; a control module electrically connected to the feeding module, configured to receive parameter information of the multiple holes and control the arrangement of the multiple feeding components and the output amount of each feeding component based on the parameter information of the multiple holes, wherein the parameter information includes the position and size information of each hole, and the spacing information between any two adjacent holes; a curing module electrically connected to the control module, configured to respectively cure the multiple conductive materials into multiple conductive through-hole structures; and a monitoring module electrically connected to the control module, configured to monitor the filling or curing status of the multiple conductive materials in the multiple holes.

[0016] One of the beneficial effects of this application is that the method and apparatus for forming conductive via structures provided in this application can improve the manufacturing process efficiency of conductive via structures and enhance the mobility and convenience of the forming apparatus by means of the technical solutions of "a control module being configured to receive parameter information of multiple holes and controlling the arrangement of multiple feeding components and the output amount of each feeding component according to the parameter information of multiple holes" and "adjusting multiple feeding components of the feeding module according to a predetermined arrangement pattern of multiple holes so that the multiple feeding components of the feeding module correspond to multiple holes of the substrate respectively".

[0017] Furthermore, the method and apparatus for forming conductive via structures provided in this application can change the arrangement and output of the feeding components in real time according to the hole layout requirements of the substrate. In other words, the method and apparatus for forming conductive via structures provided in this application can use a single device to handle multiple substrates with different predetermined hole patterns, and can form various conductive via structures according to different layout requirements.

[0018] The other effects and embodiments of this application are described in detail below with reference to the accompanying drawings. Attached Figure Description

[0019] To more clearly illustrate the technical solutions in the embodiments of this application or the prior art, the drawings used in the description of the embodiments or the prior art will be briefly introduced below. Obviously, the drawings described below are only some embodiments recorded in this application. For those skilled in the art, other drawings can be obtained based on these drawings without creative effort.

[0020] Figure 1 This is a flowchart of a method for forming a conductive through-hole structure according to an embodiment of this application;

[0021] Figure 2 This is a top view schematic diagram of a substrate having a plurality of holes presenting a predetermined arrangement pattern, according to an embodiment of this application;

[0022] Figures 3 to 5 This is a schematic diagram of the usage state of the forming apparatus for the conductive through-hole structure according to an embodiment of this application;

[0023] Figure 6 This is a schematic diagram showing the usage status of the monitoring module of the conductive through-hole structure forming device according to an embodiment of this application.

[0024] Figure 7 This is a functional block diagram of the forming apparatus for the conductive through-hole structure according to the first embodiment of this application;

[0025] Figure 8 This is a functional block diagram of the forming apparatus for the conductive through-hole structure according to the second embodiment of this application.

[0026] Symbol Explanation

[0027] M100: Forming method for conductive through-hole structure

[0028] S100-S106: Step Z: Forming device for conductive through-hole structure

[0029] 1: Feeding Module 10: Feeding Component

[0030] 11: First moving component 2: Control module

[0031] 3: Curing module 30: Laser component

[0032] 31: Second moving component; 32: Heating component

[0033] 4: Image extraction module 5: Monitoring module

[0034] 50: Transmitter component; 51: Receiver component

[0035] 510: First sensor; 511: Second sensor

[0036] 52: Image Processing Components; 6: Artificial Intelligence Module

[0037] 60: Database component; 61: Learning and training component

[0038] 62: Parameter Optimization Setting Component 63: Monitoring Module Setting Component

[0039] B: Substrate B1: Holes

[0040] C: Conductive material; C1: Conductive through-hole structure

[0041] g: Spacing L: Laser beam

[0042] L1: First laser detection beam; L2: Second laser detection beam

[0043] P: Transmitted light; R: Reflected light Detailed Implementation

[0044] The following specific embodiments illustrate the implementation of the "method and apparatus for forming conductive via structures" disclosed in this application. Those skilled in the art can understand the advantages and effects of this application from the content disclosed in this specification. This application can be implemented or applied through other different specific embodiments, and various details in this specification can also be modified and changed based on different viewpoints and applications without departing from the concept of this application. Furthermore, the accompanying drawings are for simple illustration only and are not depictions of actual dimensions, as stated in advance. The following embodiments will further describe the relevant technical content of this application in detail, but the disclosed content is not intended to limit the scope of protection of this application.

[0045] It should be understood that while terms such as "first," "second," and "third" may be used in this document to describe various components or signals, these components or signals should not be limited by these terms. These terms are primarily used to distinguish one component from another, or one signal from another. Furthermore, the term "or" as used herein should, as appropriate, include any combination of one or more of the related listed items.

[0046] [Example]

[0047] Please see Figures 1 to 6 As shown, this application embodiment provides a method M100 for forming a conductive via structure, which includes at least: step S100, providing a substrate having a plurality of holes with a predetermined arrangement pattern; step S102, adjusting a plurality of feeding components of a feeding module according to the predetermined arrangement pattern of the plurality of holes, such that the plurality of feeding components of the feeding module respectively correspond to the plurality of holes of the substrate; step S104, providing a plurality of conductive materials to the plurality of holes through the plurality of feeding components; and step S106, curing the plurality of conductive materials into a plurality of conductive via structures through a curing module.

[0048] First, in the method M100 for forming a conductive via structure, a substrate B is provided having a plurality of holes B1 arranged in a predetermined pattern (step S100). For example, please refer to... Figure 2The substrate B has multiple holes B1 arranged in a predetermined pattern. This predetermined pattern can be arrayed or non-arrayed. The size (e.g., aperture or depth) of each hole B1 can be consistent or inconsistent, and the spacing g between any two adjacent holes B1 can be consistent or inconsistent. In other words, this application does not limit the predetermined arrangement pattern (arrangement method) of the multiple holes B1 on the substrate B, the position of the multiple holes B1, the size of the multiple holes B1, or the spacing g between any two adjacent holes B1; it is all determined according to the needs of the user or manufacturer.

[0049] Next, according to a predetermined arrangement pattern of the multiple holes B1, the multiple feeding components 10 of a feeding module 1 are adjusted so that the multiple feeding components 10 of the feeding module 1 respectively correspond to the multiple holes B1 of the substrate B (step S102). For example, in conjunction with Figure 1 , Figures 3-5 and Figure 7 As shown, the feeding module 1 may include multiple feeding components 10 and at least one first moving component 11, which can be connected to the multiple feeding components 10. The first moving component 11 may be a position adjustment mechanism component or other type of adjustment mechanism component, and the at least one first moving component 11 may be configured to drive and adjust the position of each feeding component 10. In this way, the position (or arrangement) of the multiple feeding components 10 can be adjusted according to the parameter information of the multiple holes B1, so that each feeding component 10 corresponds to one of the holes B1 and is used to provide conductive material C to the corresponding hole B1; wherein, the parameter information of the multiple holes B1 may be, for example, the position information of each hole B1 or the spacing information between two adjacent holes B1, etc. However, the above example is only one feasible embodiment and is not intended to limit this application. It is worth mentioning that in this embodiment, the first moving component 11 is multiple and connected to the feeding component 10 in a one-to-one manner, but this application is not limited thereto. In practical applications, the position of multiple feeding components 10 can also be adjusted by a single first moving component 11.

[0050] Furthermore, step S102 may also include providing parameter information of multiple holes B1 to the control module 2, and adjusting the position (or arrangement) of multiple feeding components 10 through the control module 2; wherein, the parameter information of the multiple holes B1 may include the position and size information of each hole B1, as well as the spacing information between every two adjacent holes B1, etc. For example, in conjunction with Figure 1 and Figure 7As shown, parameter information of multiple holes B1 can be obtained through an image extraction module 4 electrically connected to the control module 2, and the parameter information can be transmitted to the control module 2 for analysis; alternatively, the parameter information of multiple holes B1 can be directly input to the control module 2 manually. Furthermore, in practical applications, the image extraction module 4 can be, for example, a CCD camera. After acquiring images of the substrate B and its multiple holes B1, the CCD camera can transmit the image containing the parameter information of the multiple holes B1 to the control module 2 for subsequent analysis and processing. However, the examples described above are merely one feasible embodiment and are not intended to limit this application.

[0051] Next, multiple conductive materials C can be supplied to multiple holes B1 in the substrate B using multiple feeding components 10 (step S104). For example, in conjunction with... Figure 1 , Figures 3-5 and Figure 7 As shown, the feeding assembly 10 can inject conductive material C into multiple holes B1 of the substrate B, and the conductive material C can be a viscous or thickened metal paste (e.g., silver paste). However, the above example is only one possible embodiment and is not intended to limit this application. Furthermore, it is worth noting that step S104 may also include controlling the output amount of each feeding assembly 10 according to the size information of each hole B1 via the control module 2, wherein the size information includes information such as the diameter or depth of the hole B1.

[0052] Next, the multiple conductive materials C can be cured into multiple conductive through-hole structures C1 by the curing module 3 (step S106). For example, in conjunction with Figure 1 , Figures 3-5 and Figure 7 As shown, the feeding assembly 10 can inject conductive material C into multiple holes B1 of the substrate B, and the conductive material C can be a viscous or thickened metal paste (e.g., silver paste). The curing module 3 can include multiple laser components 30 and at least one second moving component 31. At least one second moving component 31 can be connected to the laser components 30, and at least one second moving component 31 can be configured to drive and adjust the position of each laser component 30 so that each laser component 30 corresponds to one of the holes B1 of the substrate B. In practical applications, at least one second moving component 31 can be, for example, a position adjustment mechanism component or other type of adjustment mechanism component. In addition, the multiple laser components 30 are respectively configured to provide a laser beam L to the corresponding hole B1 and cure the conductive material C. In practical applications, the laser components 30 can be, for example, a laser beam generator or other similar devices. However, the examples given above are only one possible embodiment and are not intended to limit this application.

[0053] Furthermore, the multiple feeding components 10 can inject multiple conductive materials C into multiple holes B1 of the substrate B in small amounts and continuously or intermittently. During this process, because the conductive material C is gel-like, viscous, or semi-liquefied, it adheres tightly to the inner wall of the substrate. The conductive material C is then irradiated by a laser beam L projected by the laser component 30. The multiple laser components 30 of the curing module 3 can coordinate with the supply mode of the multiple feeding components 10 of the feeding module 1 to continuously or intermittently project laser beams L onto the conductive material C. As the conductive material C gradually cures, the moisture in the conductive material C evaporates and adheres tightly to the inner wall of the substrate, resulting in a cured conductive material C free of moisture. Furthermore, the cured conductive material C fills a portion of the space in the holes B1 and adheres tightly to the inner wall of the substrate without any gaps or voids. Next, the feeding module 1 can supply conductive material C again onto the cured conductive material C, and the curing module 3 can again project laser beams L onto the conductive material C.

[0054] Through the above method, multiple layers of cured conductive material C can be formed in each hole B1; finally, after each conductive material C fills the corresponding hole B1 and is cured, each layer of cured conductive material C can form a conductive through-hole structure C1; wherein, each conductive through-hole structure C1 can be a single component and a multi-layer structure.

[0055] It is worth mentioning that, in this embodiment, the curing module 3 includes multiple laser components 30, and each of the multiple laser components 30 provides a laser beam L to the corresponding hole B1 to cure the conductive material C into a conductive through-hole structure C1. However, this application is not limited thereto. For example, in another embodiment of this application, please refer to... Figure 8 The curing module 3 may include at least one heating component 32, which is configured to heat a plurality of conductive materials C to cure the plurality of conductive materials C into a plurality of conductive through-hole structures C1. In practical applications, the curing module 3 may be, for example, an oven. Thus, after the plurality of conductive materials C are injected into the plurality of holes B1 of the substrate B, the conductive materials C in each hole B1 can be dried in the oven to cure the conductive materials C into conductive through-hole structures C1. However, the examples given above are merely one possible embodiment and are not intended to limit this application.

[0056] In addition, the method M100 for forming the conductive through-hole structure of this application may further include: monitoring the substrate B in real time through a monitoring module 5 to monitor the filling or curing of multiple conductive materials C in multiple holes B1.

[0057] Furthermore, in coordination Figures 6 to 8As shown, the monitoring module 5 may include a transmitting component 50, a receiving component 51, and an image processing component 52. The receiving component 51 may include a first sensor 510 and a second sensor 511. The first sensor 510 may be located on a first side of at least one substrate B, and the first sensor 510 can be used to receive reflected light R from a first laser detection beam L1 reflected by at least one substrate B to generate a reflected signal. The second sensor 511 is located on a second side of at least one substrate B. The transmitting component 50 emits a second laser detection beam L2 toward at least one substrate B, and the second sensor 511 can be used to receive transmitted light P from the second laser detection beam L2 passing through at least one substrate B to generate a transmitted signal. The image processing component 52 may be electrically connected to the first sensor 510 and the second sensor 511. The image processing component 52 may be configured to receive the reflected signal and generate a first detection image, and to receive the transmitted signal and generate a second detection image.

[0058] Specifically, the step of real-time monitoring of the substrate via the monitoring module may include: emitting at least one first laser detection beam L1 and at least one second laser detection beam L2 toward the substrate B via the emitting component 50; then, receiving the reflected light R of the first laser detection beam reflected by the substrate B via the first sensor 510 in the receiving component 51 to generate a reflection signal; then, receiving the transmitted light P of the second laser detection beam L2 passing through the substrate B via the second sensor 511 in the receiving component 51 to generate a transmission signal; and receiving the reflection signal and the transmission signal via the image processing component 52, and generating a first detection image corresponding to the reflection signal and a second detection image corresponding to the transmission signal. The wavelength range of the first and second laser detection beams is between 300 nm and 2000 nm (e.g., any positive integer between 300 nm and 2000 nm), and the pulse width range of the first and second laser detection beams is between 50 fs and 50 ns; in other words, the pulse width range of the first and second laser detection beams is between 50 fs and 5.0 × 10⁻⁶. 7 Between fs (e.g., 50fs to 5.0×10) 7 (any positive integer between fs).

[0059] For example, in practical applications, the image processing component 52 can be a waveform generator, and the first sensor 510 and the second sensor 511 can be optical wavefront sensors. In this case, the first detection data can be a first detection waveform, and the second detection data can be a second detection waveform. Alternatively, the first sensor 510 and the second sensor 511 can be a laser vibrometer, where the reflected signal can be reflected ultrasonic waves and the transmitted signal can be transmitted ultrasonic waves. The first detection data can be a first waveform, and the second detection data can be a second waveform. Or, the first sensor 510 and the second sensor 511 can be photoelastic sensors, where the first detection data can be a first stress distribution characteristic map, and the second detection data can be a second stress distribution characteristic map. Alternatively, the first sensor 510 and the second sensor 511 can be hyperspectral sensors, and the image processing component 52 can be a hyperspectral generator. In this case, the first detection data can be a first detection spectrum, the second detection data can be a second detection spectrum, and the spectrum received by the hyperspectral sensor is a continuous spectrum with a spectral range between 300 nm and 2500 nm (e.g., any positive integer between 300 nm and 2500 nm). However, the examples given above are merely one possible embodiment and are not intended to limit this application.

[0060] In addition, based on the above content, in conjunction with Figure 7 As shown, this application further proposes a forming device Z for a conductive through-hole structure, which may include a feeding module 1, a control module 2, a curing module 3 and a monitoring module 5.

[0061] The feeding module 1 may have multiple feeding components 10, which are configured to respectively supply multiple conductive materials to multiple holes B1 in the substrate B. The control module 2 is electrically connected to the feeding module 1 and is configured to receive parameter information of the multiple holes B1 (e.g., position and size information of each hole B1, and spacing g between two adjacent holes B1, etc.), and control the arrangement of the multiple feeding components 10 and the output amount of each feeding component 10 according to the parameter information of the multiple holes B1. For example, in practical applications, substrate B may have multiple holes B1 arranged in a predetermined pattern as required, and multiple feeding components 10 may be connected to multiple first moving components 11 (e.g., position adjustment mechanism components or other types of adjustment mechanism components). Thus, the position of the first moving components 11 can be adjusted manually or by the control module 2 based on the position information of each hole B1 and the spacing g between any two adjacent holes B1, thereby adjusting the arrangement or position of the multiple feeding components 10 so that each feeding component 10 corresponds to one hole B1. However, the above example is only one possible embodiment and is not intended to limit this application.

[0062] A curing module 3, electrically connected to the control module 2, is configured to cure multiple conductive materials C into multiple conductive through-hole structures C1. For example, in conjunction with... Figures 3-5 As shown in Figure 7, the curing module 3 may be suspended above or adjacent to the substrate B, and the curing module 3 may have multiple laser components 30. The multiple laser components 30 are configured to provide multiple laser beams L into multiple holes B1 respectively, so as to cure multiple conductive materials C into multiple conductive through-hole structures C1. Furthermore, the multiple laser components 30 may also be configured to simultaneously project laser beams L into the holes B1 during the process of the feeding module 1 injecting conductive material C into the holes B1, thereby curing the conductive material C. For example, in practical applications, the laser component 30 can be a laser beam generator or other similar device. Furthermore, the curing module 3 may include at least one second moving component 31, which can connect to multiple laser components 30. The second moving component 31 can be a position adjustment mechanism component or other type of adjustment mechanism component. The second moving component 31 can be configured to drive and adjust the position of each laser component 30. In other words, the arrangement or position of the multiple laser components 30 can be adjusted by manually or through the control module 2, based on the position information of each hole B1 and the distance g between two adjacent holes B1, so that each laser component 30 corresponds to one hole B1. However, the examples given above are merely one feasible embodiment and are not intended to limit this application.

[0063] It is worth mentioning that, please cooperate. Figure 8 As shown, in another embodiment of this application, the curing module 3 may include at least one heating component 32, which is configured to heat a plurality of conductive materials C to cure the plurality of conductive materials C into a plurality of conductive through-hole structures C1. The specific implementation of the curing module 3 including at least one heating component 32 has been described in the implementation process of the aforementioned conductive through-hole structure forming method M100, and will not be described in detail here.

[0064] Monitoring module 5, electrically connected to control module 2, is configured to monitor the filling or curing of multiple conductive materials C in multiple holes B1. Monitoring module 5 utilizes multiple laser detection beams (i.e., the first laser detection beam L1 and the second laser detection beam L2) with different delay times to detect the morphological parameters of substrate B, thereby monitoring the filling or curing of the multiple conductive materials C in the multiple holes B1 of substrate B in real time. The specific implementation of monitoring module 5 has been described during the implementation of the aforementioned conductive through-hole structure forming method M100, and will not be further described here.

[0065] Furthermore, in coordination Figure 7and Figure 8 As shown, the forming apparatus Z for the conductive through-hole structure of this application may further include an image extraction module 4 and an artificial intelligence module 6.

[0066] Image extraction module 4 is configured to acquire parameter information of multiple holes B1 (e.g., position and size information of each hole, and spacing information between any two adjacent holes), and transmit the parameter information to control module 2 for analysis. The specific implementation of image extraction module 4 has been described in the aforementioned method M100 for forming conductive via structures, and will not be described again here.

[0067] Artificial intelligence module 6 is configured to learn and pre-train laser parameters of curing module 3, automatically select a suitable monitoring module 5 based on the characteristics of substrate B, and optimize the monitoring parameters of monitoring module 5. For example, artificial intelligence module 6 may include a database component 60, a learning and training component 61, a parameter optimization component 62, and a monitoring module setting component 63. Database component 60 may have relevant data on the type, shape, size, thickness, and density of substrate B, and can be connected to a cloud platform via the Internet to update the relevant data. Learning and training component 61 can be connected to database component 60, and can learn and pre-train using a deep learning algorithm based on the relevant data in database component 60. Parameter optimization component 62 can be connected to database component 60 to optimize laser parameters based on the relevant data on the type, shape, size, thickness, and density of substrate B. Monitoring module setting component 63 can be connected to database component 60 to adjust the monitoring parameters of monitoring module 5 based on the relevant data on the type, shape, size, thickness, and density of substrate B. However, the examples given above are merely one possible embodiment and are not intended to limit this application.

[0068] [Beneficial Effects of the Examples]

[0069] One of the beneficial effects of this application is that the method and apparatus for forming conductive via structures provided in this application can improve the manufacturing process efficiency of conductive via structures and enhance the mobility and convenience of the forming apparatus by means of the technical solutions of "a control module being configured to receive parameter information of multiple holes and controlling the arrangement of multiple feeding components and the output amount of each feeding component according to the parameter information of multiple holes" and "adjusting multiple feeding components of the feeding module according to a predetermined arrangement pattern of multiple holes so that the multiple feeding components of the feeding module correspond to multiple holes of the substrate respectively".

[0070] Furthermore, the method and apparatus for forming conductive via structures provided in this application can change the arrangement and output of the feeding components in real time according to the hole layout requirements of the substrate. In other words, the method and apparatus for forming conductive via structures provided in this application can use a single device to handle multiple substrates with different predetermined hole patterns, and can form various conductive via structures according to different layout requirements.

[0071] The embodiments and / or implementation methods described above are merely preferred embodiments and / or implementation methods for implementing the technology of this application, and are not intended to limit the implementation methods of the technology of this application in any way. Any person skilled in the art may make some modifications or alterations to other equivalent embodiments without departing from the scope of the technical means disclosed in this application, but these should still be regarded as the technology or embodiments that are substantially the same as those of this application.

Claims

1. A method for forming a conductive through-hole structure, characterized in that, The method for forming the conductive through-hole structure includes: A substrate is provided having a plurality of holes arranged in a predetermined pattern; According to the predetermined arrangement pattern of the plurality of holes, the plurality of feeding components of the feeding module are adjusted so that the plurality of feeding components of the feeding module respectively correspond to the plurality of holes of the substrate; Multiple conductive materials are respectively supplied into multiple holes via multiple feeding components; and The curing module is used to cure the multiple conductive materials into multiple conductive through-hole structures.

2. The method for forming a conductive through-hole structure as described in claim 1, characterized in that, The method for forming the conductive through-hole structure further includes: obtaining parameter information of multiple holes through an image extraction module, and transmitting the parameter information to a control module for analysis; wherein the parameter information includes the position and size information of each hole, and the spacing information between every two adjacent holes.

3. The method for forming a conductive through-hole structure as described in claim 1, characterized in that, The curing module includes multiple laser components configured to provide multiple laser beams to multiple holes to cure multiple conductive materials into multiple conductive through-hole structures.

4. The method for forming a conductive through-hole structure as described in claim 1, characterized in that, The curing module includes at least one heating component, which is configured to heat a plurality of the conductive materials to cure the plurality of conductive materials into a plurality of conductive through-hole structures.

5. The method for forming a conductive through-hole structure as described in claim 2, characterized in that, The method for forming the conductive through-hole structure further includes: The control module controls the output of each feeding component based on the size information of each hole.

6. The method for forming a conductive through-hole structure as described in claim 1, characterized in that, The method for forming the conductive through-hole structure further includes: real-time monitoring of the substrate by a monitoring module to monitor the filling or curing of the conductive materials in the multiple holes.

7. The method for forming a conductive through-hole structure as described in claim 6, characterized in that, The step of real-time monitoring of the substrate via the monitoring module further includes: At least one first laser detection beam and at least one second laser detection beam are emitted toward the substrate by the emission assembly; A reflection signal is generated by receiving at least one reflected light from the substrate of the first laser detection beam through a first sensor. A transmission signal is generated by receiving transmitted light from at least one of the second laser detection beams passing through the substrate via a second sensor; and The image processing component receives the reflected signal and generates a first detection image, and receives the transmitted signal and generates a second detection image. Wherein, the wavelength range of at least one of the first laser detection beams and at least one of the second laser detection beams is 300nm to 2000nm, and the pulse width range of at least one of the first laser detection beams and at least one of the second laser detection beams is 50fs to 50ns.

8. The method for forming a conductive through-hole structure as described in claim 7, characterized in that: The image processing component is a waveform generator, the first sensor and the second sensor are wavefront sensors, the first detected image data is a first detected waveform, and the second detected image data is a second detected waveform; or The first sensor and the second sensor are laser vibrometers, the reflected signal is reflected ultrasonic wave, the transmitted signal is transmitted ultrasonic wave, the first detection data is a first waveform, and the second detection data is a second waveform.

9. The method for forming a conductive through-hole structure as described in claim 7, characterized in that: The first sensor and the second sensor are photoelastic sensors, the first detection image is a first stress distribution feature image, and the second detection image is a second stress distribution feature image; or The first sensor and the second sensor are hyperspectral sensors, the image processing component is a hyperspectral generator, the first detection image is a first detection spectrum, the second detection image is a second detection spectrum, and the spectrum received by the hyperspectral sensor is a continuous spectrum with a spectral range between 300 nm and 2500 nm.

10. A forming device for a conductive through-hole structure, characterized in that, The forming apparatus for the conductive through-hole structure includes: A feeding module having multiple feeding components configured to respectively supply multiple conductive materials to multiple holes in a substrate; A control module, electrically connected to the feeding module, is configured to receive parameter information of multiple holes and control the arrangement of multiple feeding components and the output of each feeding component based on the parameter information of the multiple holes. The parameter information includes the position and size information of each hole and the spacing information between two adjacent holes. A curing module, electrically connected to the control module, is configured to cure a plurality of the conductive materials into a plurality of conductive through-hole structures; and A monitoring module, electrically connected to the control module, is configured to monitor the filling or curing of the conductive materials in the plurality of holes.

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