Light detection device

Abstract

The light detection device includes: a first chip and a second chip that are laminated so as to have an electrical connection to each other; a pixel array unit provided in the first chip and including a plurality of pixels, each of the plurality of pixels including a photoelectric conversion unit; and a circuit unit provided in the second chip and electrically connected to the pixel array unit of the first chip. The plurality of pixels includes: imaging pixels that detect visible light; and ranging pixels that detect ranging light. The pixel array unit includes: an imaging pixel array unit including a plurality of imaging pixels arranged at least in a row direction; and a ranging pixel array unit including a plurality of ranging pixels arranged at least in the row direction. The circuit unit includes: an imaging circuit unit electrically connected to the imaging pixel array unit, and a ranging circuit unit electrically connected to the ranging pixel array unit.

Description

Technical Field

[0001] This disclosure relates to a light detection device. Background Technology

[0002] Light detection devices, such as imaging devices and ranging devices, include pixels containing photoelectric conversion units.

[0003] Reference List

[0004] Patent documents

[0005] PTL 1:JP 2019-33181 A

[0006] PTL 2:WO 2020 / 137754

[0007] PTL 3:JP 2018-512573 T

[0008] PTL 4:WO 2021 / 166542

[0009] PTL 5:JP 2021-153198 A

[0010] PTL 6:JP 2022-000968 A

[0011] PTL 7:JP 2020-141146 A

[0012] PTL 8:JP 2023-88476 A

[0013] PTL 9:JP 2022-128450 A

[0014] PTL 10:JP 2023-543709 T

[0015] PTL 11:WO 2020 / 149173

[0016] PTL 12:JP 2021-176206 A

[0017] PTL 13:JP 2017-055241 A

[0018] PTL 14:JP 2019-169962 A

[0019] PTL 15:WO 2022 / 269982

[0020] PTL 16:JP 2020-174157 A

[0021] PTL 17:JP 2017-59655 A

[0022] PTL 18:WO 2022 / 239459 Summary of the Invention

[0023] Technical issues

[0024] The photoelectric conversion unit is formed within a semiconductor chip. There is room for consideration regarding the chip configuration for optical detection devices that possess both imaging and ranging functions.

[0025] One aspect of this disclosure provides a light detection device having a chip configuration capable of performing imaging and ranging.

[0026] Solution to the problem

[0027] The light detection device according to aspects of this disclosure includes: a first chip and a second chip, the first chip and the second chip being stacked to have an electrical connection with each other; a pixel array portion disposed in the first chip and including a plurality of pixels, each of the plurality of pixels including a photoelectric conversion portion; and a circuit portion disposed in the second chip and electrically connected to the pixel array portion of the first chip, wherein the plurality of pixels includes: an imaging pixel for detecting visible light; and a ranging pixel for detecting ranging light, the pixel array portion including: an imaging pixel array portion including a plurality of the imaging pixels arranged at least in a column direction; and a ranging pixel array portion including a plurality of the ranging pixels arranged at least along the column direction, and the circuit portion including: an imaging circuit portion electrically connected to the imaging pixel array portion; and a ranging circuit portion electrically connected to the ranging pixel array portion.

[0028] The light detection device according to aspects of this disclosure includes: an imaging chip having imaging pixels for detecting visible light; a ranging chip having ranging pixels for detecting ranging light; and an optical system for guiding visible light from a detection area to the imaging chip and guiding ranging light to the ranging chip. Attached Figure Description

[0029] Figure 1 This is a diagram illustrating a schematic configuration example of the light detection device 100 according to an embodiment.

[0030] Figure 2 This is a diagram illustrating an example of a schematic configuration of the light detection device 100.

[0031] Figure 3 This is a diagram illustrating an example of a circuit (pixel circuit) for an imaging pixel 3p.

[0032] Figure 4 This is a diagram illustrating an example of a circuit for a 3D ranging pixel.

[0033] Figure 5This is a diagram illustrating an example of a schematic configuration of the light detection device 100.

[0034] Figure 6 This is a diagram illustrating an example of a schematic configuration of the light detection device 100.

[0035] Figure 7 This is an example diagram depicting a floor plan.

[0036] Figure 8 This is an example diagram depicting a floor plan.

[0037] Figure 9 This is an example diagram depicting a floor plan.

[0038] Figure 10 This is an example diagram depicting a floor plan.

[0039] Figure 11 This is an example diagram depicting a floor plan.

[0040] Figure 12 This is an example diagram depicting a floor plan.

[0041] Figure 13 This is an example diagram depicting a floor plan.

[0042] Figure 14 This is a diagram illustrating an example of wafer-on-wafer (WoW).

[0043] Figure 15 This is a diagram depicting an example of chip-on-wafer (CoW).

[0044] Figure 16 This is a diagram illustrating an example of a schematic configuration of the light detection device 100.

[0045] Figure 17 This is a diagram illustrating an example of a schematic configuration of the light detection device 100.

[0046] Figure 18 This is a diagram illustrating an example of a schematic configuration of the light detection device 100.

[0047] Figure 19 This is a diagram illustrating an example of a schematic configuration of the light detection device 100.

[0048] Figure 20 This is a diagram illustrating an example of a schematic configuration of the light detection device 100.

[0049] Figure 21 This is a diagram illustrating an example of a schematic configuration of the light detection device 100.

[0050] Figure 22This is a diagram illustrating an example of a schematic configuration of the light detection device 100.

[0051] Figure 23 This is a diagram depicting an example of nonlinearity.

[0052] Figure 24 This is a diagram depicting an example of nonlinearity.

[0053] Figure 25 This is a diagram illustrating an example of a schematic configuration of the light detection device 100.

[0054] Figure 26 This is a diagram illustrating an example of correction performed via correction circuit 521.

[0055] Figure 27 This is a diagram that schematically illustrates the fusion algorithm.

[0056] Figure 28 This is a graph depicting an example of the selection of distance candidate values.

[0057] Figure 29 This is a graph depicting an example of the selection of distance candidate values.

[0058] Figure 30 This is a diagram illustrating an example of flicker suppression processing.

[0059] Figure 31 This is a diagram illustrating an example of a schematic configuration of the light detection device 100.

[0060] Figure 32 This is a diagram illustrating an example of a schematic configuration of the light detection device 100.

[0061] Figure 33 This is a diagram illustrating an example of a schematic configuration of the light detection device 100.

[0062] Figure 34 This is a diagram illustrating an example of the characteristics of the cutoff filter 14.

[0063] Figure 35 This is a diagram illustrating an example of a schematic configuration of the light detection device 100.

[0064] Figure 36 This is a diagram illustrating an example of a schematic configuration of the light detection device 100.

[0065] Figure 37 This is a diagram illustrating an example of a schematic configuration of the light detection device 100.

[0066] Figure 38 This is a diagram illustrating an example of a schematic configuration of the light detection device 100.

[0067] Figure 39This is a diagram illustrating an example of a schematic configuration of the light detection device 100.

[0068] Figure 40 This is a diagram illustrating an example of a schematic configuration of the light detection device 100.

[0069] Figure 41 This is a diagram illustrating an example of a schematic configuration of the light detection device 100.

[0070] Figure 42 This is a diagram illustrating an example of a schematic configuration of a 3D-ZAF ranging pixel.

[0071] Figure 43 This is a diagram illustrating an example of a schematic configuration of a 3D-ZAF ranging pixel.

[0072] Figure 44 This is a diagram depicting an example of distance measurement.

[0073] Figure 45 This is a diagram depicting an example of distance measurement.

[0074] Figure 46 This is a diagram depicting an example of distance measurement.

[0075] Figure 47 This is a diagram illustrating an example of a schematic configuration of the light detection device 100.

[0076] Figure 48 This is a diagram illustrating an example of a schematic configuration of a 3D-ZAF ranging pixel.

[0077] Figure 49 This is a diagram illustrating an example of a schematic configuration of a 3D-ZAF ranging pixel.

[0078] Figure 50 This is a diagram illustrating an example of a combination of distance measurement methods.

[0079] Figure 51 This is a diagram illustrating an example of a combination of distance measurement methods.

[0080] Figure 52 This is a diagram illustrating an example of reduced sensitivity in the 3D range-measuring pixel.

[0081] Figure 53 This is a diagram illustrating an example of reduced sensitivity in the 3D range-measuring pixel.

[0082] Figure 54 This is a diagram illustrating an example of reduced sensitivity in the 3D range-measuring pixel.

[0083] Figure 55 This is a diagram illustrating an example of reduced sensitivity in the 3D range-measuring pixel.

[0084] Figure 56 This is a diagram illustrating an example of reduced sensitivity in the 3D range-measuring pixel.

[0085] Figure 57 This is a diagram illustrating an example of reduced sensitivity in the 3D range-measuring pixel.

[0086] Figure 58 This is a diagram illustrating an example of reduced sensitivity in the 3D range-measuring pixel.

[0087] Figure 59 This is a diagram illustrating an example of reduced sensitivity in the 3D range-measuring pixel.

[0088] Figure 60 This is a diagram illustrating an example of reduced sensitivity in the 3D range-measuring pixel.

[0089] Figure 61 This is a diagram illustrating an example of reduced sensitivity in the 3D range-measuring pixel.

[0090] Figure 62 This is a diagram illustrating an example of reduced sensitivity in the 3D range-measuring pixel.

[0091] Figure 63 This is a diagram illustrating an example of reduced sensitivity in the 3D range-measuring pixel.

[0092] Figure 64 This is a diagram illustrating an example of a schematic configuration of the light detection device 100.

[0093] Figure 65 This is a diagram depicting an example of a color arrangement.

[0094] Figure 66 This is a diagram depicting an example of a color arrangement.

[0095] Figure 67 This is a diagram depicting an example of a color arrangement.

[0096] Figure 68 This is a diagram depicting an example of a color arrangement.

[0097] Figure 69 This is a diagram depicting an example of a color arrangement.

[0098] Figure 70 This is a diagram depicting an example of a color arrangement.

[0099] Figure 71 This is a diagram depicting an example of an array of imaging pixels 3p-OPB.

[0100] Figure 72 This is a diagram depicting an example of an array of imaging pixels 3p-OPB.

[0101] Figure 73 This is a diagram depicting an example of sensitivity adjustment.

[0102] Figure 74 This is a diagram depicting an example of a pixel array.

[0103] Figure 75 This is a diagram depicting an example of a pixel array.

[0104] Figure 76 This is a diagram depicting an example of a color center.

[0105] Figure 77 This is a diagram depicting an example of a color center.

[0106] Figure 78 This is a diagram depicting an example of a color center.

[0107] Figure 79 This is a diagram depicting an example of the detection region A.

[0108] Figure 80 This is a diagram depicting examples of signal acquisition with different sensitivities.

[0109] Figure 81 This is a diagram depicting an example of a process (imaging method) performed in the light detection device 100.

[0110] Figure 82 This is a diagram depicting an example of a process (imaging method) performed in the light detection device 100.

[0111] Figure 83 This is a diagram illustrating an example of exposure time in a one-dimensional scanning method.

[0112] Figure 84 This is a diagram illustrating an example of a schematic configuration of the ranging pixel 3d and the ranging circuit section 5d.

[0113] Figure 85 This is a diagram depicting an example of signal forwarding in the memory section 55.

[0114] Figure 86 This is a diagram illustrating an example of a schematic configuration of the ranging pixel 3d and the ranging circuit section 5d.

[0115] Figure 87 This is a diagram illustrating an example of a schematic configuration of the ranging pixel 3d and the ranging circuit section 5d.

[0116] Figure 88 This is a diagram illustrating an example of a schematic configuration of the ranging pixel 3d and the ranging circuit section 5d.

[0117] Figure 89 This is a diagram illustrating an example of a schematic configuration of the ranging pixel 3d and the ranging circuit section 5d.

[0118] Figure 90This is a diagram depicting an example of signal addition.

[0119] Figure 91 This is a diagram depicting an example of signal addition.

[0120] Figure 92 This is a diagram depicting an example of signal addition.

[0121] Figure 93 This is a diagram depicting an example of signal addition.

[0122] Figure 94 This is a diagram depicting an example configuration for signal addition.

[0123] Figure 95 This is a diagram depicting an example configuration for signal addition.

[0124] Figure 96 This is a diagram illustrating an example of TDI operation.

[0125] Figure 97 This is a diagram illustrating an example of TDI operation.

[0126] Figure 98 This is a diagram depicting an example of a one-dimensional scan.

[0127] Figure 99 This is a diagram depicting an example of a one-dimensional scan.

[0128] Figure 100 This is a diagram depicting an example of a one-dimensional scan.

[0129] Figure 101 This is a diagram depicting an example of a one-dimensional scan.

[0130] Figure 102 This is a diagram depicting an example of a one-dimensional scan.

[0131] Figure 103 This is a diagram depicting an example of a one-dimensional scan.

[0132] Figure 104 This is a diagram illustrating an example of a schematic configuration of the light detection device 100.

[0133] Figure 105 It is a block diagram illustrating an example of a schematic configuration of a vehicle control system.

[0134] Figure 106 This is an explanatory diagram showing an example of the installation location of the vehicle exterior information detection unit and the imaging unit. Detailed Implementation

[0135] In the following, embodiments of the present disclosure will be described in detail based on the accompanying drawings. It should be noted that in the following embodiments, redundant explanations are omitted by assigning the same reference numerals to the same elements.

[0136] This disclosure will be described in the following order.

[0137] 1. Example

[0138] 2. Summary

[0139] 3. Application Examples

[0140] 3.1 Application Examples for Moving Bodies

[0141] 3.2 Other Application Examples

[0142] 1. Example

[0143] Figure 1 This is a schematic configuration example of a light detection device 100 according to an embodiment. The light detection device 100 has both imaging and ranging functions. The light detection device 100 includes a plurality of chips (semiconductor chips), and in this example, two chips. The first chip is referred to and illustrated as chip 1. The second chip is referred to and illustrated as chip 2. When they are not specifically distinguished, they are simply referred to as chips.

[0144] Chip 1 and Chip 2 are stacked in a manner that allows them to be electrically connected to each other. The XYZ coordinate system is also illustrated in the accompanying figure. The X-axis and Y-axis directions (XY plane directions) correspond to the surface directions of the chips. The X-axis direction is also referred to as the horizontal direction. The Y-axis direction is also referred to as the vertical direction. The Z-axis direction corresponds to the thickness direction of the chips (stack direction). The positive Z-axis direction is also referred to as the upward direction. The negative Z-axis direction is also referred to as the downward direction.

[0145] exist Figure 1 In the example shown, chip 2 and chip 1 are stacked in this order along the positive Z-axis. Chip 1 can also be referred to as the upper chip positioned above chip 2. Chip 2 can also be referred to as the lower chip positioned below chip 1.

[0146] Chip 1 and chip 2 are bonded together to make electrical contact with each other. The bonding surfaces of chip 1 and chip 2 are referred to as bonding surface 1a and illustrated as bonding surface 2a. An example of bonding is a Cu-Cu bonding, in which the Cu exposed at bonding surface 1a and the Cu exposed at bonding surface 2a are directly connected to each other. In addition to Cu-Cu, through-silicon vias (TSVs), microbumps, etc., can also be used, for example.

[0147] Figure 2 This is a diagram illustrating an example of a schematic configuration of a light detection device 100. Chips 1 and 2 are shown separated in the Z-axis direction. The light detection device 100 includes a pixel array section 4 and a circuit section 5.

[0148] A pixel array section 4 is disposed in the chip 1. The pixel array section 4 includes a plurality of pixels 3. Each pixel 3 includes a photoelectric conversion section 120 (described later). Figure 3 (As depicted in the image). Examples of the photoelectric conversion unit 120 include photodiodes (PD), avalanche photodiodes (APD), single-photon avalanche diodes (SPAD), etc.

[0149] APD can be understood to include SPAD. Unless otherwise stated, they are collectively referred to as SPAD. To the extent that there is no contradiction, the term SPAD can be understood to indicate at least one of SPAD and APD.

[0150] Pixel 3 comprises two types of pixels. One type is primarily used for imaging and is referred to as and illustrated as imaging pixel 3p. The other type is primarily used for ranging and is referred to as ranging pixel 3d. Imaging pixel 3p detects at least visible light. Ranging pixel 3d detects at least ranging light (light used for ranging). An example of ranging light is IR light, and an example wavelength is 940 nm.

[0151] The portion (area) of the pixel array section 4 that is provided with imaging pixels 3p is referred to as and illustrated as imaging pixel array section 4p. The portion that is provided with ranging pixels 3d is referred to as ranging pixel array section 4d.

[0152] The imaging pixel array 4p includes a plurality of imaging pixels 3p arranged at least in the column direction (Y-axis direction). In other words, in the imaging pixel array 4p, the plurality of imaging pixels 3p are arranged in at least a one-dimensional array (1D arrangement). The plurality of imaging pixels 3p may also be arranged in the row direction (X-axis direction), and in this case, the plurality of imaging pixels 3p are arranged in a two-dimensional array (2D arrangement) in the imaging pixel array 4p.

[0153] The ranging pixel array 4d includes a plurality of ranging pixels 3d arranged at least in the column direction. In other words, in the ranging pixel array 4d, the plurality of ranging pixels 3d are arranged in at least a one-dimensional array (1D arrangement). The plurality of ranging pixels 3d may also be arranged in the row direction, and in this case, the plurality of ranging pixels 3d are arranged in a two-dimensional array (2D arrangement) in the ranging pixel array 4d.

[0154] When the imaging pixel array 4p and the ranging pixel array 4d are not particularly distinguished from each other, they are simply referred to as pixel array 4. When the imaging pixel 3p and the ranging pixel 3d are not particularly distinguished, they are simply referred to as pixel 3.

[0155] In each pixel 3 of the pixel array section 4, light to be detected by the pixel 3 is incident on the photoelectric conversion section 120 of the pixel 3, and an electric charge is generated. In response to the generation of the electric charge, an electrical signal is generated. The pixel 3 and its associated peripheral circuitry (pixel circuitry) can differ between the case where the photoelectric conversion section 120 is a PD (photovoltaic power supply) and the case where the photoelectric conversion section 120 is a SPAD (photoelectric digital array). (Refer to...) Figure 3 and Figure 4 Describe it.

[0156] Figure 3 and Figure 4 This is a diagram illustrating an example of the circuit. In the following description, a transistor connecting two elements means that one of the source and drain of the transistor is connected to one element, and the other of the source and drain is connected to another element. The cathode of the photoelectric conversion unit 120 is referred to as and shown as cathode 120c. The signal line used to output a signal from the circuit is referred to as and shown as signal line SL.

[0157] Figure 3 The circuitry for the imaging pixel 3p is depicted. In this example, the photoelectric conversion unit 120 is a PD. In the photoelectric conversion unit 120, a charge corresponding to the amount of incident light is generated. The circuit includes the photoelectric conversion unit 120, multiple transistors TR, and a floating diffuser FD.

[0158] The transistors TR, TR-TG, TR-RST, TR-AMP, and TR-SEL are shown in the attached diagram as multiple transistors. When not specifically distinguished, they are simply referred to as transistors TR.

[0159] The transistor TR-TG is connected between the photoelectric conversion unit 120 and the floating diffusion FD, and forwards the charge generated in the photoelectric conversion unit 120 to the floating diffusion FD. The transistor TR-TG can also be referred to as a forwarding transistor. A drive signal (also referred to as a control signal) is supplied to the gate of the transistor TR-TG, thereby controlling the turn-on and turn-off of the transistor TR-TG.

[0160] The floating diffuser FD accumulates charge from the photoelectric conversion unit 120 and generates a voltage signal corresponding to the amount of charge. The floating diffuser FD can also be referred to as a conversion element that converts charge into voltage.

[0161] Transistor TR-RST is connected between the floating diffuser FD and the power supply voltage VDD, and releases (resets) the charge accumulated in the floating diffuser FD. When transistor TR-TG is turned on, the charge in photoelectric conversion section 120 is also released. Transistor TR-RST can also be referred to as a reset transistor. A drive signal is supplied to the gate of transistor TR-RST, thereby controlling the turn-on and turn-off of transistor TR-RST.

[0162] Transistor TR-AMP is connected between the power supply voltage VDD and transistor TR-SEL. The gate of transistor TR-AMP is connected to the floating diffuser FD. A voltage corresponding to the voltage of the floating diffuser FD is output from transistor TR-AMP.

[0163] Transistor TR-SEL is connected between transistor TR-AMP and signal line SL, and selectively outputs the output voltage of transistor TR-AMP to signal line SL. This voltage is then output as a signal via signal line SL. Transistor TR-SEL can also be referred to as a selection transistor. A drive signal is supplied to the gate of transistor TR-SEL, thereby controlling the turn-on and turn-off of transistor TR-SEL.

[0164] For example, using the circuit configuration described above, a signal corresponding to the generation of charge in the photoelectric conversion unit 120, which serves as a PD, can be generated and extracted. The circuit configuration is not limited to... Figure 3 The circuit configuration can be various known circuit configurations.

[0165] Figure 3 The various transistors TR and floating diffusion FD depicted can be set as components of the imaging pixel 3p on chip 1. Figure 2 )middle.

[0166] Figure 4 The circuitry for a 3D ranging pixel is depicted. In this example, the photoelectric conversion unit 120 is a SPAD. In the photoelectric conversion unit 120, charge is generated with high sensitivity as light is incident. The circuit includes the photoelectric conversion unit 120 and a plurality of transistors TR. These transistors TR-IN and TR-INV are shown by reference numerals in the accompanying drawings. Unless otherwise specified, they are simply referred to as transistors TR.

[0167] Transistor TR-IN is an example of a quenching resistor element. Transistor TR-IN is connected to photoconverter 120 to perform recharging to initialize the voltage caused by electrons avalanche amplification in photoconverter 120. In this example, transistor TR-IN is connected between the power supply voltage VDD and photoconverter 120 and is controlled by a drive signal supplied to the gate.

[0168] Transistor TR-INV is a collective term for multiple transistors that constitute an inverter circuit. Transistor TR-INV is connected between photoelectric conversion unit 120 and signal line SL. Transistor TR-INV generates an electrical signal, more specifically a pulse signal, corresponding to the charge generation in photoelectric conversion unit 120, and outputs this electrical signal to signal line SL.

[0169] For example, using the circuit configuration described above, a signal corresponding to the generation of charge in the photoelectric conversion unit 120, which is a SPAD, can be generated and extracted. The circuit configuration is not limited to... Figure 4 The circuit configuration can be varied, and various known circuit configurations can be used. Various types of quenching circuits, recharge circuits, waveform shaping circuits, etc., can be used. In addition to passive quenching and passive recharge, active quenching and active recharge methods can also be employed. Edge detection methods that extract the rising edge of the pixel signal can be used, and level detection based on the sampling on-time can be employed. Examples of this are described in PCT / JP2025 / 002012, previously filed by the applicant of this application.

[0170] Figure 4 The various transistors TR shown are used as pixel circuit 50d (described later) Figure 6 The components are placed in chip 2.

[0171] Return to reference Figure 2 The light detection device 100 detects light traveling from the top to the bottom (along the negative Z-axis direction) of the chip 1, that is, light incident on the surface (back surface) of the chip 1 opposite to the bonding surface 1a. As described above, in the chip 1, a plurality of imaging pixels 3p are arranged in at least a one-dimensional array in the imaging pixel array section 4p. In the ranging pixel array section 4d, a plurality of ranging pixel array sections 4d are arranged in at least a one-dimensional array. In such a configuration, a one-dimensional scanning method can be used as the light detection method. (Refer to...) Figure 5 Describe it.

[0172] Figure 5 This is a diagram illustrating an example of a schematic configuration of the light detection device 100. The area that serves as the light detection target of the light detection device 100 is referred to and shown as detection area A. For each line area A corresponding to a pixel column... line Detects light from detection area A.

[0173] The light detection device 100 includes a scanning mechanism 9 in addition to chips 1 and 2. The scanning mechanism 9 performs a line scan of the detection area A on the plurality of pixels 3 constituting the pixel column using light incident from the detection area A. The line area A on the detection area A... line Scanned, and from line region A line The light is directed to the corresponding pixel column of chip 1.

[0174] There are no particular restrictions on the specific configuration of the scanning mechanism 9, and various configurations can be used. For example, the scanning mechanism 9 may include a finite angle torque motor (LATM) or a polygonal mirror.

[0175] As described above, the optical detection device 100 has both imaging and ranging functions. During imaging, the detection area A is scanned linearly, and the light originates from the linear area A... line The light is guided by the scanning mechanism 9 to the pixel column of the corresponding imaging pixel 3p and is detected.

[0176] For example, during distance measurement, light from a light source device (not shown) is used as the distance measuring light to illuminate the line area A via the scanning mechanism 9. line From line region A line The reflected ranging light is guided by the scanning mechanism 9 to the pixel column of the corresponding ranging pixel 3d and detected. A direct time-of-flight (dToF) method can be used. For each pixel 3, the distance to the portion of the detection area A corresponding to each pixel 3 is calculated based on the time from the output time of the ranging light to the detection time.

[0177] Unless otherwise stated, it is assumed that the light detection of the light detection device 100 is performed by the one-dimensional scanning method described above.

[0178] return Figure 2 A circuit section 5 is disposed in chip 2. The circuit section 5 is electrically connected to the pixel array section 4 of chip 1. The circuit section 5 drives the pixel array section 4 of chip 1 and processes signals from the pixel array section 4. Examples of driving include exposure of each pixel 3, signal readout, etc., and for example, a drive signal is thus supplied to the aforementioned reference. Figure 3 and Figure 4 Some transistors TR are described. Circuit section 5 may include various drive circuits, such as row selection circuits and column selection circuits. Examples of signal processing include image signal generation, ranging, etc.

[0179] The circuit section 5 includes an imaging circuit section 5p and a ranging circuit section 5d. The imaging circuit section 5p is electrically connected to the imaging pixel array section 4p of the chip 1. As described above, the imaging pixel 3p includes a pixel circuit that generates an electrical signal in response to the generation of charge in the photoelectric conversion section 120 of the imaging pixel 3p, i.e., for example, as described above. Figure 3 The transistor TR is shown. Signals from the pixel circuit are transmitted from the imaging pixel 3p to the imaging circuit section 5p. The ranging circuit section 5d is electrically connected to the ranging pixel array section 4d of the chip 1, and more specifically, for example, to the photoelectric conversion section 120 of the imaging pixel array section 4p.

[0180] Figure 6 This is a diagram illustrating an example of a schematic configuration of the light detection device 100. A block configuration of the imaging circuit section 5p and the ranging circuit section 5d is shown.

[0181] The imaging circuit section 5p includes a conversion circuit 51p and a signal processing circuit 52p.

[0182] The conversion circuit 51p performs analog-to-digital (AD) conversion on the signals (i.e., signals from the pixel circuit (analog signals)) from each imaging pixel 3p of the imaging pixel array section 4p. The conversion circuit 51p may include various circuits, such as a counter circuit. The AD-converted signal is transmitted from the conversion circuit 51p to the signal processing circuit 52p.

[0183] Signal processing circuit 52p processes the signal from conversion circuit 51p. An example of this processing is image signal generation. For instance, based on the signal after AD conversion performed by conversion circuit 51p on each imaging pixel 3p, an image signal for the detection region A described above is generated.

[0184] The ranging circuit section 5d includes a pixel circuit 50d, a conversion circuit 51d, and a signal processing circuit 52d.

[0185] The pixel circuit 50d includes transistors for the circuitry of the ranging pixel 3d, i.e., for example, those described above. Figure 4 The transistor TR is shown in the diagram. That is, the pixel circuit 50d generates an electrical signal, more specifically a pulse signal, corresponding to the generation of charge in the photoelectric conversion unit 120 of the ranging pixel 3d. The generated pulse signal is transmitted from the pixel circuit 50d to the conversion circuit 51d.

[0186] The conversion circuit 51d generates information indicating the light reception time (light reception timing) based on the pulse signal from the pixel circuit 50d. This information is also called timing information. Multiple timing information is generated corresponding to multiple pulse signals repeatedly transmitted during an exposure period. Based on this timing information, the conversion circuit 51d generates a signal indicating the histogram (data). This signal is transmitted from the conversion circuit 51d to the signal processing circuit 52d.

[0187] Signal processing circuit 52d generates ranging results based on the signal from conversion circuit 51d (i.e., a histogram of light reception time). The light reception time of the ranging light estimated from the histogram is identified, and the time from the emission time of the ranging light to the light reception time in the light detection device 100 is calculated based on this time. Based on the calculated time, the distance to each portion of the detection area A is calculated (dToF method).

[0188] The circuit section 5 also includes IF 5i. IF 5i is an interface section for sending data to and receiving data from external devices (such as processors) of the chip 2. Through IF 5i, signals from external devices are supplied to the imaging circuit section 5p and the ranging circuit section 5d, and signals from the imaging circuit section 5p and the ranging circuit section 5d are supplied to the external devices.

[0189] <Floor Plan>

[0190] In the light detection device 100 with the above configuration, the arrangement (plan view) of the pixel array section 4 and the circuit section 5 can be designed in various ways. Several examples will be described.

[0191] As described above, the photoelectric conversion unit 120 of the ranging pixel 3d is disposed in the chip 1. The transistor TR (connected to the photoelectric conversion unit 120) Figure 4 The photoelectric conversion unit 120 and the transistor TR are arranged close to each other.

[0192] Specifically, in Figure 6 In the example shown, pixel circuit 50d is arranged in chip 2, and pixel circuit 50d of chip 2 is located directly below imaging pixel array 4p of chip 1. In a plan view (e.g., viewed along the Z-axis), pixel circuit 50d of ranging circuit 5d overlaps with ranging pixel array 4d. For example, by electrically connecting pixel circuit 50d to ranging pixel array 4d via Cu-Cu bonding as described above, the transistor TR( Figure 4 The photoelectric conversion unit 120 is located as close as possible to the ranging pixel array 4d. Figure 4 ).

[0193] Various other floor plans are possible. For example, in Figure 6 In the example shown, the conversion circuit 51p is arranged in chip 2, and the conversion circuit 51p of chip 2 is located directly below the imaging pixel array section 4p of chip 1. In the plan view, the conversion circuit 51p of the imaging circuit section 5p overlaps with the imaging pixel array section 4p. The conversion circuit 51p can be placed as close as possible to the pixel circuit. (Refer to...) Figures 7 to 13 Further description of other floor plans.

[0194] Figures 7 to 13 This is an example diagram illustrating a floor plan.

[0195] exist Figure 7 In the example shown, the imaging pixel array 4p and the ranging pixel array 4d are arranged spaced apart from each other in the row direction (X-axis direction) of the chip 1. The separation distance can be, for example, greater than the size of one or more pixels 3. The imaging pixel array 4p is arranged at one end of the chip 1 (the end on the negative X-axis direction side).

[0196] In chip 2, the frame is arranged along the signal flow in circuit section 5. Specifically, in imaging circuit section 5p, conversion circuit 51p and signal processing circuit 52p are arranged in this order along the positive X-axis direction. In ranging circuit section 5d, pixel circuit 50d, conversion circuit 51d and signal processing circuit 52d are arranged in this order along the positive X-axis direction.

[0197] exist Figure 8 and9 In the example shown, a thermometer 6 is also arranged. Various circuit configurations for temperature detection can be used. The temperature can vary depending on its location within the chip. Figure 8 As shown, thermometer 6 can be arranged in chip 2, or as... Figure 9 As shown, thermometers 6 can be arranged in chip 1. Multiple locations within the same chip can be arranged for thermometers 6, and the number of thermometers 6 is not particularly limited.

[0198] like Figure 9 As shown, a bias voltage 7 can be arranged. Various circuit configurations for the bias voltage can be used. The voltage from the bias voltage 7 is applied to the photoelectric conversion unit 120 of the imaging pixel 3p of the imaging pixel array 4p, or to the photoelectric conversion unit 120 of the ranging pixel 3d of the ranging pixel array 4d. For example, different voltages can be applied to the PD and SPAD. For example, the voltage of the bias voltage 7 can be adjusted according to the temperature detection result of the thermometer 6. Changes in electrical characteristics caused by temperature variations between different parts of the chip can be suppressed. For a more specific configuration, refer to, for example, PTL 15 (WO 2022 / 269982).

[0199] exist Figure 10 In the example shown, the imaging pixel array 4p is arranged at one end of the chip 1 (the end on the negative X-axis direction). The ranging pixel array 4d is arranged at the other end of the chip 1 (the end on the positive X-axis direction). The separation distance between the imaging pixel array 4p and the ranging pixel array 4d is maximized.

[0200] exist Figures 11 to 13 The diagram illustrates a further example of a plan view of chip 1. The pixel array section 4 includes multiple imaging pixel array sections 4p and multiple ranging pixel array sections 4d. Multiple pairs of imaging pixel array sections 4p and ranging pixel array sections 4d are arranged adjacent to each other in the X-axis direction.

[0201] exist Figure 11 In the example shown, the imaging pixel array 4p and the ranging pixel array 4d are arranged alternately in the row direction (X-axis direction). More specifically, there are three pairs of imaging pixel arrays 4p and ranging pixel arrays 4d arranged in sequence.

[0202] exist Figure 12 and 13 In the example shown, there are two such pairs. Figure 12 In the example shown, the imaging pixel array 4p and the ranging pixel array 4d are arranged in reverse order in the row direction between one pair and the other. Figure 13 In the example shown, the imaging pixel array 4p and the ranging pixel array 4d are arranged in the same order in the row direction between one pair and the other. Figure 11 As in the example, the imaging pixel array 4p and the ranging pixel array 4d are arranged alternately in the row direction.

[0203] <Example of chip stacking structure>

[0204] Chip 1 and Chip 2 can be stacked in a wafer-to-wafer (WoW) configuration or a chip-to-wafer (CoW) configuration. (See reference...) Figure 14 and 15 Describe it.

[0205] Figure 14 This diagram illustrates an example of a wafer-to-wafer (WoW) arrangement. Chip 1 and chip 2 are stacked on top of each other in a wafer state. An imaging pixel array 4p and a ranging pixel array 4d are disposed on a single chip 1.

[0206] Figure 15 This is a diagram depicting an example of a chip-to-wafer (CoW). One of chip 1 and chip 2 (chip 1 in this example) has a dual-chip configuration. One chip 1 is referred to and illustrated as chip 1-1. The other chip 1 is referred to and illustrated as chip 1-2. Chip 1-1 is provided with an imaging pixel array 4p. Chip 1-2 is provided with a ranging pixel array 4d. The space between chip 1-1 and chip 1-2 can be a void (air) or can be filled with SiO2, resin, etc.

[0207] The photoelectric conversion unit 120 of the ranging pixel 3d in the ranging pixel array 4d can be a PD. Furthermore, as described later, the photoelectric conversion unit 120 of the imaging pixel 3p in the imaging pixel array 4p can be a SPAD. That is, the photoelectric conversion unit 120 for detecting visible light and for detecting ranging light can be combined with a PD and a SPAD in any way.

[0208] In such Figure 15 In the CoW configuration shown, chip 1-1 can be equipped with a PD, and chip 1-2 can be equipped with a SPAD, serving as a photoelectric conversion unit 120. Chips 1-1 and 1-2, with different cross-sectional structures, are stacked on chip 2. (Refer to...) Figure 16 Examples describing the structure.

[0209] <Example of cross-sectional structure>

[0210] Figure 16 This is a diagram illustrating an example of a schematic configuration of the light detection device 100. It schematically illustrates a cross-sectional view of a portion of the light detection device 100 when viewed along a direction perpendicular to the Z-axis (in this example, the positive X-axis).

[0211] The imaging pixel array 4p includes multiple imaging pixels 3p for detecting different colors of light. Examples of colors include red (R), green (G), blue (B), etc. The imaging pixel 3p that detects red light is referred to as and illustrated as imaging pixel 3p-R. The imaging pixel 3p that detects green light is referred to as and illustrated as imaging pixel 3p-G. Although not shown in... Figure 16 As shown, however, the imaging pixel 3p that detects blue light is referred to as imaging pixel 3p-B. When they are not specifically distinguished, they are simply referred to as imaging pixel 3p.

[0212] As described above, the ranging pixel 3d of the ranging pixel array 4d detects the ranging light.

[0213] Chip 1 includes a wiring layer 11, a photoelectric conversion layer 12, and an optical layer 13. The wiring layer 11, the photoelectric conversion layer 12, and the optical layer 13 are arranged in this order along the positive Z-axis.

[0214] First, the photoelectric conversion layer 12 will be described. The photoelectric conversion layer 12 is a layer that includes the photoelectric conversion unit 120. In this example, the photoelectric conversion unit 120 of the imaging pixel 3p is a PD. The photoelectric conversion unit 120 of the ranging pixel 3d is a SPAD.

[0215] An isolation structure (e.g., a trench) is provided between the photoelectric conversion sections 120 of adjacent pixels 3. The isolation may include optical isolation and may also include electrical isolation. A voltage may be applied to the isolation structure. For example, a negative voltage may be applied to the isolation structure provided between adjacent ranging pixels 3d in the ranging pixel array section 4d.

[0216] Wiring layer 11 is disposed between photoelectric conversion layer 12 and bonding surface 1a. Wiring lines (including vias) included in wiring layer 11 are schematically shown. Wiring lines exposed on bonding surface 1a in wiring layer 11 are referred to as wiring lines 111.

[0217] In the imaging pixel array 4p, the cathode 120c of the photoelectric conversion unit 120 of the photoelectric conversion layer 12 is connected to the various transistors TR mentioned above via the wiring lines of the wiring layer 11. Figure 3 The signal from it is output to wiring line 111.

[0218] In the ranging pixel array 4d, the cathode 120c of the photoelectric conversion unit 120 of the photoelectric conversion layer 12 is connected to the wiring line of the wiring layer 11. The signal from it is output to the wiring line 111.

[0219] The optical layer 13 is disposed to cover the photoelectric conversion layer 12, that is, the photoelectric conversion unit 120 of the plurality of pixels 3. The optical layer 13 guides light, which is to be detected by the pixels 3, out of incident light to the photoelectric conversion unit 120 of the pixels 3. The optical layer 13 includes a lens 131, and includes a filter 132 in the imaging pixel array unit 4p among the imaging pixel array unit 4p and the ranging pixel array unit 4d.

[0220] In this example, a lens 131 is provided for each imaging pixel 3p and each ranging pixel 3d, and converges incident light on the photoelectric conversion unit 120 of the imaging pixel 3p or the ranging pixel 3d.

[0221] The filter 132 transmits light of a color detected by the corresponding imaging pixel 3p. The filter 132 of the imaging pixel 3p may also be referred to as a color filter. The filter 132 that transmits red light is referred to and illustrated as a filter 132R. The filter 132 that transmits green light is referred to and illustrated as a filter 132G. Although not shown in Figure 16 the drawing, the filter 132 that transmits blue light is referred to as a filter 132B. When they are not particularly distinguished, they are simply referred to as the filters 132.

[0222] The chip 2 includes a wiring layer 21. Among wiring lines (including vias) included in the wiring layer 21, a wiring line exposed on the bonding surface 2a is referred to and illustrated as a wiring line 211. The wiring line 211 is connected to the circuit unit 5( Figure 6 and the like) via the wiring lines of the wiring layer 21.

[0223] The chip 1 and the chip 2 are stacked to establish contact between the wiring line 111 exposed on the bonding surface 1a of the chip 1 and the wiring line 211 exposed on the bonding surface 2a of the chip 2. Electrical connection between the chip 1 and the chip 2 is established.

[0224] The above Figure 16 configuration is merely an example, and various other configurations may be adopted. For example, a region having a fine uneven structure may be formed between the photoelectric conversion unit 120 and the filter 132. Light is diffused, and thus light detection efficiency can be improved. See, for example, PTL 16 (JP 2020-174157 A).

[0225] <SPAD imaging pixel>

[0226] In one embodiment, a SPAD may be used as the photoelectric conversion unit 120 of the imaging pixel 3p. Description will be made with reference to Figures 17 to 26 the drawings.

[0227] Figure 17 and Figure 18 are diagrams illustrating an example of a schematic configuration of the light detection device 100.

[0228] Figure 17 The circuitry for the imaging pixel 3p is depicted. In this example, the photoelectric conversion unit 120 of the imaging pixel 3p is a SPAD. The circuit configuration and operation are the same as described above. Figure 4 The same as in the previous section. The photoelectric conversion unit 120 is provided in the chip 1 as a component of the imaging pixel 3p. Figure 2 In the 50p pixel circuit described later, transistors TR-IN and TR-INV are used. Figure 18 The component is located in chip 2.

[0229] Figure 18 The block configuration of the imaging circuit section 5p is depicted. The imaging circuit section 5p also includes a pixel circuit 50p. The pixel circuit 50p includes transistors for the circuitry of the imaging pixels 3p. Specifically, the above... Figure 17 The transistor TR in the image is used. The pixel circuit 50p generates a pulse signal corresponding to the generation of charge in the photoelectric conversion unit 120 of the imaging pixel 3p. The generated pulse signal is transmitted from the pixel circuit 50p to the conversion circuit 51p.

[0230] The conversion circuit 51p of the imaging circuit section 5p includes a counting circuit 511. The counting circuit 511 counts the pulse signals from the pixel circuit 50p. Since the count value increases with the amount of light incident on the imaging pixel 3p, the count value can indicate the amount of incident light. A signal indicating the count value is transmitted from the conversion circuit 51p to the signal processing circuit 52p.

[0231] Signal processing circuit 52p processes the signal from conversion circuit 51p. An example of processing is image signal generation. For example, based on the counting result (i.e., the count value of the counting circuit 511 of conversion circuit 51p for each imaging pixel 3p), the image signal of the detection area A described above is generated.

[0232] For example, as described above, SPADs can be used to perform imaging. This enables high-sensitivity imaging and increases the possibility of improving the performance of the light detection device 100. Furthermore, by using a SPAD as the photoelectric conversion unit 120 for both the imaging pixel 3p and the ranging pixel 3d disposed on the same chip 1, costs can also be reduced.

[0233] <Example of cross-sectional structure>

[0234] Figure 19 This is a diagram illustrating an example of a schematic configuration of the light detection device 100. A partial cross-section of the light detection device 100 is shown schematically. Both the photoelectric conversion unit 120 of the imaging pixel 3p and the photoelectric conversion unit 120 of the ranging pixel 3d are SPADs. In this example, multiple lenses 131 are provided in one imaging pixel 3p (for one photoelectric conversion unit 120).

[0235] Imaging pixel 3p also includes imaging pixel 3p types other than those described above, such as imaging pixel 3p-R, imaging pixel 3p-G, and imaging pixel 3p-B. In imaging pixel 3p, optical layer 13 may also include a light-shielding layer 133. The light-shielding layer 133 is disposed between photoelectric conversion unit 120 and filter 132. The light-shielding layer 133 can be made of various materials, and an example is tungsten (W).

[0236] The imaging pixel 3p, which is completely shielded from light by the photoelectric conversion unit 120, is referred to as and shown as imaging pixel 3p-OPB. Imaging pixel 3p-OPB is used to obtain the signal when no light is incident on the photoelectric conversion unit 120 (corresponding to a black signal), and can also be referred to as an optical black pixel. It should be noted that... Figure 19 In the example shown, filters 132R and 132B are disposed on lens 131 in imaging pixel 3p-OPB. For example, this can improve light-blocking performance.

[0237] The partially shaded imaging pixel 3p (shaded imaging pixel) of the photoelectric conversion unit 120 is referred to as imaging pixel 3p-ND or imaging pixel 3p-ZAF.

[0238] By limiting the light incident on the photoelectric conversion unit 120, the sensitivity of the imaging pixel 3p-ND is made lower than that of the imaging pixel 3p. The light-shielding layer 133 can also be considered as a neutral density (ND) filter. It is particularly suitable for detecting light from high-brightness (high-illuminance) areas. The imaging pixel 3p-ND that detects red light is referred to as and shown as imaging pixel 3p-ND-R. Although not shown in the figure, there are also imaging pixels 3p-ND-G that detect green light and imaging pixels 3p-ND-B that detect blue light.

[0239] The imaging pixel 3p-ZAF is used to detect image plane phase difference. A more specific example of its application is focus adjustment (autofocus). A pair of imaging pixels 3p-ZAF exist, in which different portions of the photoelectric conversion unit 120 are blocked from light, and one of these... Figure 19 It is shown in the middle.

[0240] The imaging pixel 3p-ZAF for detecting green light is referred to as imaging pixel 3p-ZAF-G and illustrated. Although not shown in the figure, there are also imaging pixels 3p-ZAF-R for detecting red light and 3p-ZAF-B for detecting blue light.

[0241] <Cut-off filter>

[0242] In one embodiment, a light-blocking filter can be provided to suppress unwanted light incident on the imaging pixel array 4p and the ranging pixel array 4d. (Refer to...) Figure 20 and Figure 21 Describe it.

[0243] Figure 20 and Figure 21 This diagram illustrates an example of a schematic configuration of the light detection device 100. The light detection device 100 also includes a cutoff filter 14. The cutoff filter 14 is disposed on the side of the optical layer 13 opposite to the photoelectric conversion layer 12, i.e., above the optical layer 13 (on the positive Z-axis side). In this example, the cutoff filter 14 is disposed outside the chip 1. However, the cutoff filter 14 could also be incorporated into the chip 1.

[0244] The cutoff filter 14 includes multiple filters, more specifically, in this example, a ranging light cutoff filter 14p and a visible light cutoff filter 14d. The ranging light cutoff filter 14p cuts off the ranging light and transmits visible light. The ranging light cutoff filter 14p is configured to cover the imaging pixel array portion 4p. The visible light cutoff filter 14d cuts off visible light and transmits the ranging light. The visible light cutoff filter 14d is configured to cover the ranging pixel array portion 4d.

[0245] Various known filter configurations can be used. Selective filters (also known as SIR filters, etc.) can be used as range-finding light cutoff filters 14p.

[0246] As described above, the imaging pixel array 4p and the ranging pixel array 4d can be arranged at intervals. The ranging light cutoff filter 14p and the visible light cutoff filter 14d covering these can be easily arranged. The ranging light cutoff filter 14p and the visible light cutoff filter 14d can also be arranged at intervals.

[0247] <Stacked structure of photoelectric conversion layer>

[0248] In one embodiment, the photoelectric conversion layer 12 may have a multi-layer structure, such as a two-layer structure. A three-layer structure is provided, which includes two photoelectric conversion layers 12 and a layer of circuit section 5. (See reference...) Figure 22 Describe it.

[0249] Figure 22 This is a diagram illustrating an example of a schematic configuration of a light detection device 100. Two photoelectric conversion layers 12 are stacked. The first photoelectric conversion layer is referred to and illustrated as photoelectric conversion layer 12-1. The second photoelectric conversion layer is referred to and illustrated as photoelectric conversion layer 12-2. Photoelectric conversion layers 12-2 and 12-1 are arranged in this order along the positive Z-axis.

[0250] The photoelectric conversion unit 120 included in the photoelectric conversion layer 12-1 corresponds to the photoelectric conversion unit of the imaging pixel array 4p and is used to detect visible light. The photoelectric conversion unit 120 included in the photoelectric conversion layer 12-2 corresponds to the photoelectric conversion unit of the ranging pixel array 4d and is used to detect ranging light. Since the ranging light passes through the optical layer 13 and the photoelectric conversion layer 12-1 to reach the photoelectric conversion layer 12-2, the ranging light may be attenuated to some extent, but it is still detectable.

[0251] <Correction Circuit>

[0252] As described above, when the photoelectric conversion unit 120 of the imaging pixel 3p is a SPAD, an image signal is generated based on the count value of the pulse signal. The count value can change non-linearly with respect to the amount of incident light. (Refer to...) Figure 23 and Figure 24 Describe it.

[0253] Figure 23 and Figure 24 This is a graph illustrating an example of nonlinearity. The horizontal axis of the graph indicates the amount of incident light. The vertical axis of the graph is... Figure 23 The middle indicates the signal-to-noise ratio (SNR), and in Figure 24 The indicator shows the count value. As the amount of incident light increases, both the count value and the SNR increase. This change is non-linear.

[0254] Given the aforementioned nonlinearity, it is necessary to accurately identify the amount of incident light based on the count value. In one embodiment, a correction process can be performed for this purpose.

[0255] Figure 25 This is a diagram illustrating an example of a schematic configuration of the light detection device 100. In this example, the signal processing circuit 52p includes a correction circuit 521. The correction circuit 521 corrects the counting result of the counting circuit 511 (i.e., the signal indicating the count value) to obtain a signal of a level corresponding to the amount of light incident on the photoelectric conversion unit 120 of the imaging pixel 3p. See also... Figure 26 Describe it.

[0256] Figure 26 This diagram illustrates an example of correction performed by correction circuit 521. A signal indicating a count value is input to correction circuit 521. The level of the input signal changes non-linearly with respect to the amount of incident light. Correction circuit 521 has input / output characteristics that cancel out non-linearity. For example, piecewise linear correction can be performed. The level of the signal output from correction circuit 521 changes linearly with respect to the amount of incident light.

[0257] In the case where the photoelectric conversion unit 120 is a SPAD, in the circuit of the imaging pixel 3p ( Figure 17In the SPAD, a dead time occurs during recharging where no pulse signal is generated. The dead time can vary depending on the individual SPAD. The correction circuit 521 can be designed to handle this individual variation.

[0258] For example, an image signal is generated based on the corrected signal as described above. High dynamic range is more easily achieved through the linear correction described above. Nonlinear correction solutions, such as those addressing the gamma characteristics of the display, can also be provided, in which case the linear correction described above can be omitted.

[0259] <Fusion Algorithm>

[0260] Returning to ranging, when the SPAD is used as the photoelectric conversion unit 120 of the ranging pixel 3D, the resolution may be reduced. To improve the resolution, the fusion algorithm described below can be used.

[0261] Figure 27 This diagram schematically illustrates the fusion algorithm. Data obtained based on the signal from imaging pixel 3p is called imaging data. Imaging data indicates, for example, the amount of light of the color detected by imaging pixel 3p. Data obtained based on the signal from ranging pixel 3d is called ranging data. Ranging data indicates the distance to the position in detection area A corresponding to ranging pixel 3d.

[0262] The resolutions of imaging and ranging, i.e., the resolutions of the imaging pixel array 4p and the ranging pixel array 4d, can be different from each other. For example, the arrangement density of imaging pixels 3p in the imaging pixel array 4p and the arrangement density of ranging pixels 3d in the ranging pixel array 4d can be different from each other, or the scanning resolutions can be different. Specifically, here, the imaging pixel array 4p has a high resolution, and the ranging pixel array 4d has a low resolution.

[0263] The processing entity of the fusion algorithm can be the circuit section 5 ( Figure 6 (etc.), and more specifically, it may be signal processing circuit 52p or signal processing circuit 52d. Circuit unit 5 correlates ranging data with imaging data to generate high-resolution point data.

[0264] By generating a large amount of point data across the entire detection region A, not only can image information of detection region A be obtained, but also distance information for each part of detection region A can be obtained. This point data includes information about the three-dimensional space of detection region A and is also referred to as point cloud data.

[0265] As an example, such as Figure 27 As shown on the left, 12 (4×3) imaging data points and one ranging data point are acquired. By fusing these data, a larger number of point data points are obtained than the number of ranging data points. In other words, the resolution of the point cloud can be improved.

[0266] As described above, ranging data can be obtained in the form of a histogram. The peaks (including local maxima) of the histogram indicate candidate distance values ​​for the corresponding region in detection area A. Here, when the histogram has multiple peaks (local maxima), multiple candidate distance values ​​are indicated for the same region in detection area A. It is necessary to select an appropriate candidate distance value from these multiple candidate values. (Refer to...) Figure 28 and Figure 29 Describe the handling in this situation.

[0267] Figure 28 and Figure 29 This is a graph illustrating an example of the selection of distance candidate values. (Example) Figure 28 As shown in the example, two objects (i.e., object OBJ1 and object OBJ2) exist in detection region A. Some regions in detection region A are referred to as and shown as region A1, region A2, and region A12.

[0268] Region A1 exists only in object OBJ1. Region A2 exists only in object OBJ2. Region A12 exists (across) both objects OBJ1 and OBJ2. The region corresponding to an imaging data point in region A12 is referred to as and shown as region A12x.

[0269] like Figure 29 As shown in the figure, a histogram of the ranging data is presented. The horizontal axis of the graph indicates distance, and the vertical axis indicates frequency.

[0270] The imaging data is indicated by the light intensity value for each color, more specifically, by the light intensity value for each of the red (R), green (G), and blue (B) colors. For regions A1 and A2, the average light intensity value is indicated across the entire region. For region A12x within region A12, the light intensity value for region A12x is indicated.

[0271] Because the histogram of the ranging data has only one peak, the distance in region A1 is uniquely determined. This distance is then correlated with the 12 imaging data points for region A1. Similarly, because the histogram of the ranging data has only one peak, the distance in region A2 is also uniquely determined. This distance is then correlated with the 12 ranging data points for region A2.

[0272] Because the histogram of the ranging data has two peaks, the distance in region A12 is not uniquely determined. Therefore, for each region in A12, ranging data indicating appropriate distance candidates is searched, and this ranging data is correlated with the imaging data for that region.

[0273] Specifically, the imaging data of region A12x is compared with the imaging data of each of the other regions (i.e., regions A1 and A2 in this example). The ranging data of the other regions that provide the most similar (or identical) imaging data to this data are associated with the imaging data of region A12x. In this example, the ranging data of region A2 (between region A1 and region A2) is used and associated with the imaging data of region A12x.

[0274] For example, even when multiple distance candidate values ​​are indicated for the same region A12x in detection region A, the appropriate distance candidate value can be found as described above.

[0275] <Flicker Suppression>

[0276] It can also suppress flickering. (Refer to...) Figure 30 Describe it.

[0277] Figure 30 This is a diagram illustrating an example of flicker suppression processing. Signal processing circuitry 52p is shown as an example of the processing entity. A frame memory M is used. Frame memory M can be placed anywhere, as long as it can be used in signal processing circuitry 52p.

[0278] The frame memory M stores image signals (frame data) for multiple frames. One frame's image signal corresponds to the image signal of the detection region A at a specific time. The image signals for multiple frames include the current frame's image signal and past frame's image signals. Past frame's image signal is the image signal of the previous frame or an earlier frame.

[0279] When the latest frame's image signal is acquired, that image signal is replaced with the current frame's image signal. The image signal before replacement is replaced with the image signal of the previous frame. This also applies to image signals from two or more frames prior to the frame memory M.

[0280] The signal processing circuit 52p adds the signals from the imaging pixels 3p of multiple frames (more specifically, the image signal of the current frame and the image signals of past frames). The addition can be a weighted addition, and the image signals of each frame can be added at any ratio. By adding the image signals of multiple frames in this way, flicker can be suppressed. For example, the recognition rate of traffic lights, signs, etc., can be improved.

[0281] <Interval Arrangement>

[0282] As described above, the imaging pixel array 4p and the ranging pixel array 4d can be arranged in the chip 1 at intervals from each other. (Refer to again...) Figures 31 to 40 Describe it.

[0283] Figure 31 and Figure 32This diagram illustrates an example of a schematic configuration of the light detection device 100. The imaging pixel array 4p and the ranging pixel array 4d are arranged spaced apart from each other. In other words, the imaging pixel 3p in the imaging pixel array 4p that is furthest from the ranging pixel array 4d (in this example, the positive X-axis direction) and the ranging pixel 3d in the ranging pixel array 4d that is furthest from the imaging pixel array 4p (in this example, the negative X-axis direction) are arranged spaced apart from each other. This increases the possibility of suppressing inter-pixel crosstalk, for example, when ranging light is incident on the imaging pixel 3p and visible light is incident on the ranging pixel 3d.

[0284] The separation distance between the imaging pixel array 4p and the ranging pixel array 4d can have a length corresponding to N pixels. Here, N is an integer greater than or equal to 1. Figure 31 In the example shown, N is 1. Figure 32 In the example shown, N is 2 or more.

[0285] Since the imaging pixel array 4p and the ranging pixel array 4d are arranged far apart from each other, the cutoff filter 14 can be easily arranged. Figure 20 For example, cutoff filter 14 can be disposed in a package accommodating chip 1 and chip 2. (See reference...) Figures 33 to 37 Describe it.

[0286] Figure 33 This is a diagram illustrating an example of a schematic configuration of a photodetector 100. The photodetector 100 includes a package 8 that houses chip 1 and chip 2.

[0287] Package 8 includes a substrate 81, a die bonding material 82, a molding resin 83, a sealing resin 84, and a glass 85. Solder balls SB are provided on the lower surface (the surface on the positive Z-axis side) of the substrate 81. The die bonding material 82, chip 2, and chip 1 are sequentially disposed on the upper surface (the surface on the positive Z-axis side) of the substrate 81. The substrate 81, chip 1, and chip 2 are electrically connected via leads W. The molding resin 83 is configured to cover the substrate 81, die bonding material 82, chip 2, chip 1, and leads W, and the sealing resin 84 and glass 85 are sequentially disposed thereon.

[0288] A cutoff filter 14 is disposed in the package 8. The cutoff filter 14 includes a ranging light cutoff filter 14p that cuts off IR light (an example of ranging light) and a visible light cutoff filter 14d that transmits IR light and cuts off visible light.

[0289] Figure 34This is a diagram illustrating an example of the characteristics of cutoff filter 14. The horizontal axis of the diagram indicates wavelength. The vertical axis of the diagram indicates transmittance. The ranging light cutoff filter 14p transmits (allows) light in the visible light band and cuts off light in the IR light band. The visible light cutoff filter 14d transmits (allows) light in the IR light band and cuts off light in the visible light band.

[0290] Return to reference Figure 33 Since the cutoff filter 14 can be configured as an external component of chip 1, for example, the design freedom of the cutoff filter 14 can be increased, and its performance can be improved. Figure 33 In the example shown, the ranging light cutoff filter 14p and the visible light cutoff filter 14d are disposed on the upper surface (the surface on the positive Z-axis side) of the glass 85 of the package 8. (Refer to...) Figures 35 to 37 Describe several modifications.

[0291] Figures 35 to 37 This is a diagram illustrating an example of a schematic configuration of the light detection device 100. Figure 35 In the example shown, the cutoff filter 14 is disposed on the lower surface (the surface on the negative Z-axis side) of the glass 85. The closer the cutoff filter 14 is to the chip 1, the more likely it is to achieve a filtering effect.

[0292] exist Figure 36 and Figure 37 In the example shown, the ranging light cutoff filter 14p and the visible light cutoff filter 14d are arranged spaced apart from each other. Figure 37 As shown, the glass 85 and the sealing resin 84 can be separated according to the separate arrangement of the cut-off filter 14 and the visible light cut-off filter 14d.

[0293] For example, various configurations of package 8 as described above can be used. The design freedom of package 8 is also increased.

[0294] <Example of on-chip filter configuration>

[0295] As described above, in chip 1, filter 132 ( Figure 19 The filter 132 is disposed in the imaging pixel 3p. In one embodiment, the filter 132 may also be disposed in the ranging pixel 3d. If the imaging pixel array 4p and the ranging pixel array 4d are arranged separately from each other, the filter 132 of the imaging pixel 3p and the filter 132 of the ranging pixel 3d may also be arranged separately from each other. Design freedom can be increased. (Refer to...) Figure 38 Describe it.

[0296] Figure 38This is a diagram illustrating an example of a schematic configuration of the light detection device 100. The optical layer 13 also has a filter 132 in the ranging pixel 3d. The filter 132 of the ranging pixel 3d is a filter that transmits ranging light, more specifically, a filter that transmits IR light, and is referred to and illustrated as filter 132IR. It should be noted that when filter 132IR is not specifically distinguished from other filters 132, it is simply referred to as filter 132.

[0297] Since the imaging pixel array 4p and the ranging pixel array 4d are arranged separately from each other, the filter 132 of the imaging pixel 3p and the filter 132IR of the ranging pixel 3d are also arranged separately from each other. This increases the design freedom of the filter 132. For example, different types of filters, more specifically, filters with different structures, principles, etc., can be used in the imaging pixel 3p and the ranging pixel 3d. Examples of the filter 132 include plasma filters, resonant filters, etc. For example, a plasma filter disclosed in PTL 5 (JP 2021-153198A) or a resonant filter disclosed in PTL 6 (JP 2022-000968A) can be used as filter 132IR.

[0298] <Pseudopixels>

[0299] In one embodiment, pseudo-pixels may be arranged between the imaging pixel array 4p and the ranging pixel array 4d. (Refer to...) Figure 39 and Figure 40 Describe it.

[0300] Figure 39 and Figure 40 This is a schematic diagram illustrating an example configuration of a light detection device 100. The light detection device 100 includes pseudo-pixels 3x. The pseudo-pixels 3x are disposed between the imaging pixel array section 4p and the ranging pixel array section 4d to maintain a periodic arrangement of a plurality of pixels 3. Pixel columns including pseudo-pixels 3x can be arranged between these. By arranging pseudo-pixels 3x, a repeating pattern is maintained during manufacturing. This increases pixel sensitivity.

[0301] The pseudo-pixel 3x may have a different structure than the imaging pixel 3p. Specifically, the pseudo-pixel 3x includes a photoelectric conversion unit 120 and a light-shielding layer 133 configured to cover the entire photoelectric conversion unit 120.

[0302] exist Figure 39 In the example shown, the pseudo-pixel 3x also includes a lens 131 and a filter 132. As the filter 132 for the pseudo-pixel 3x, when the adjacent pixel is an imaging pixel 3p, a filter that transmits visible light can be used, and when the adjacent pixel is a ranging pixel 3d, a filter that transmits ranging light can be used.

[0303] exist Figure 40 In the example shown, pseudo-pixel 3x does not include lens 131. The presence of lens 131 may cause interference of reflected light (glare) due to the regular structure. This glare reduction can be suppressed by eliminating lens 131. The glare reduction suppression effect is further enhanced by setting a filter 132 that can suppress light reflection.

[0304] <Image Plane Phase Difference Ranging>

[0305] In one embodiment, there may be a ranging pixel 3d with a configuration similar to that of the imaging pixel 3p-ZAF. (Refer to...) Figures 41 to 51 Describe it.

[0306] Figure 41 This is a diagram illustrating an example of a schematic configuration of the light detection device 100. Multiple ranging pixels 3d include ranging pixels 3d-ZAF. The ranging pixels 3d-ZAF are ranging pixels 3d (light-shielding ranging pixels) in which the photoelectric conversion unit 120 (SPAD in this example) is partially light-shielded by a light-shielding layer 133.

[0307] In the light-shielded portion of the photoelectric conversion unit 120, there exists a pair of distinct ranging pixels 3d-ZAF. One ranging pixel 3d-ZAF is referred to and illustrated as ranging pixel 3d-ZAF-1. The other ranging pixel 3d-ZAF is referred to and illustrated as ranging pixel 3d-ZAF-2. When there is no particular distinction between them, they are simply referred to as ranging pixels 3d-ZAF.

[0308] exist Figure 41 In the example shown, the left half (the half on the negative X-axis side) of the photoelectric conversion unit 120 (SPAD in this example) of the ranging pixel 3d-ZAF-1 is covered by a light-shielding layer 133. The right half (the half on the positive X-axis side) of the photoelectric conversion unit 120 of the ranging pixel 3d-ZAF-2 is covered by a light-shielding layer 133.

[0309] Figure 42 and Figure 43 This diagram illustrates an example of a schematic configuration of a 3D-ZAF ranging pixel. In this example, four lenses 131 are arranged in a square array. A light-shielding layer 133 is arranged for each lens column. This increases the possibility of reducing light reflection and improving light detection efficiency. The light-shielding layer 133 of the 3D-ZAF-1 ranging pixel is configured to overlap with the left half (the half on the negative X-axis direction) of each lens 131. Figure 42 When ranging pixel 3d-ZAF-1 is considered as a whole, its left half can be considered occluded. The light-shielding layer 133 of ranging pixel 3d-ZAF-2 is set to overlap with the right half of each lens 131. Figure 43When the ranging pixel 3d-ZAF-2 is considered as a whole, its right half can be considered occluded.

[0310] Distance measurement can be performed using a pair of ranging pixels as described above using 3D-ZAF. (Refer to...) Figures 44 to 46 Describe it.

[0311] Figures 44 to 46 This is a diagram illustrating an example of ranging. The target object being measured is referred to as object OBJ. The length between a pair of ranging pixels 3d-ZAF, more specifically, the length between the centers of their photoelectric conversion units 120, is referred to as distance X. Distance X is a known value. Light from object OBJ is incident on the photoelectric conversion unit 120 of each of the pair of ranging pixels 3d-ZAF (i.e., ranging pixels 3d-ZAF-1 and ranging pixels 3d-ZAF-2). The angle of incidence of light relative to the upper surface of the photoelectric conversion unit 120 is referred to as angle θ.

[0312] The angle θ is obtained based on the light receiving levels of ranging pixels 3d-ZAF-1 and 3d-ZAF-2. For example... Figure 45 As shown, in the photoelectric conversion unit 120 of the ranging pixel 3d-ZAF-1, light is incident only on its right side. In the photoelectric conversion unit 120 of the ranging pixel 3d-ZAF-2, light is incident only on its left side.

[0313] exist Figure 46 In the graph, the horizontal axis represents the angle θ. The vertical axis indicates the light receiving level. The light receiving levels of ranging pixels 3d-ZAF-1 and 3d-ZAF-2 exhibit different behaviors related to the angle θ. Because there is a relationship between the two light receiving levels and the angle θ, the angle θ can be obtained from the two light receiving levels.

[0314] Return to reference Figure 44 The distance D from object OBJ is calculated using distance X and angle θ. Specifically, distance D is calculated as D = Xtan(θ / 2).

[0315] For example, as described above, ranging can be performed based on the distance D between a pair of ranging pixels 3d-ZAF and their light reception level. This ranging is also known as image plane phase difference ranging. The ranging processing entity can be the imaging circuit unit 5p ( Figure 6 wait).

[0316] The shading patterns for 3D-ZAF ranging pixels are not limited to the examples above. (Refer to...) Figures 47 to 49 Other examples describing light-blocking patterns.

[0317] Figure 47 This is a diagram illustrating an example of a schematic configuration of the light detection device 100. Figure 48and Figure 49 This is a diagram illustrating an example of a schematic configuration of a 3D-ZAF ranging pixel.

[0318] exist Figure 47 In the example shown, the upper half (the half on the positive Y-axis side) of the photoelectric conversion unit 120 (SPAD in this example) of the ranging pixel 3d-ZAF-1 is covered by the light-shielding layer 133. The lower half (the half on the negative Y-axis side) of the photoelectric conversion unit 120 of the ranging pixel 3d-ZAF-2 is covered by the light-shielding layer 133.

[0319] exist Figure 48 and Figure 49 In the example shown, four (2×2) lenses 131 are arranged in a square array. A light-shielding layer 133 is arranged for each lens row. The light-shielding layer 133 of the ranging pixel 3d-ZAF-1 is configured to overlap with the upper half (the half on the positive Y-axis side) of each lens 131. Figure 48 When the ranging pixel 3d-ZAF-1 is viewed as a whole, its upper half can be considered to be occluded. The light-shielding layer 133 of the ranging pixel 3d-ZAF-2 is configured to overlap with the lower half of each lens 131. Figure 49 When viewing the 3d-ZAF-2 ranging pixel as a whole, its lower half can be considered occluded.

[0320] The above-mentioned image plane phase difference ranging and dToF ranging methods can be used in combination. (Refer to...) Figure 50 and Figure 51 Describe it.

[0321] Figure 50 and Figure 51 This diagram illustrates an example of a combination of ranging methods. The white arrows schematically indicate the ranging ranges performed by the imaging pixel 3p-ZAF and the ranging ranges performed by the ranging pixel 3d. For short-range (close-range) measurements, image plane phase difference ranging is used. For long-range (far-range) measurements, the dToF method is used. Figure 51 As shown, the ranging range using image plane phase difference ranging and the ranging range using the dToF method can partially overlap.

[0322] Note that in the dToF method, either a partially shaded 3d-ZAF ranging pixel or a fully shaded 3d ranging pixel can be used. As mentioned above, the 3d-ZAF ranging pixel is used for image plane phase difference ranging.

[0323] By combining two types of ranging, the dynamic range of ranging can be expanded while utilizing the advantages of both types. For example, when image plane phase difference ranging is used for long-distance ranging, there is a possibility that the ranging error will increase. This is because the influence of the angle θ error on the ranging result increases with the distance. This problem can be solved by using the dToF method for long-distance ranging. On the other hand, in the case of the dToF method, for example, when the light reflection on the object OBJ is large, the 3D ranging pixel may saturate. In particular, this problem may become significant in short-distance ranging. This problem can be solved by using image plane phase difference ranging for short-distance ranging. The advantage of the 3D ranging pixel-ZAF is that it is less likely to saturate because a portion of it is shaded to reduce sensitivity.

[0324] It offers various other advantages. For example, using image plane phase difference ranging eliminates the need to illuminate the object OBJ with ranging light or detect the ranging light reflected from the object OBJ. Therefore, ranging errors due to the reflectivity, shape, etc., of the object OBJ are less likely to occur. Furthermore, even if there is an obstruction such as glass between the optical detection device 100 and the object OBJ, its influence is limited.

[0325] <Reduced sensitivity of 3D ranging pixels>

[0326] For example, when using the dToF method, if the light reflection on the object OBJ is high, the 3D ranging pixel may saturate. This problem becomes particularly noticeable at shorter distances. To suppress saturation of the 3D ranging pixel, its sensitivity can be reduced. (Refer to...) Figures 52 to 63 Describe it.

[0327] Figures 52 to 63 This diagram illustrates an example of reduced sensitivity of the ranging pixel 3d. The partially shaded ranging pixel 3d (shaded ranging pixel) is referred to as ranging pixel 3d-ND and shown as ranging pixel 3d-ND. Various shading patterns can be employed.

[0328] exist Figures 52 to 55 In the example shown, a light-shielding layer 133 is provided to cover 25% of the photoelectric conversion unit 120. Sensitivity is reduced to 75%. For example, as... Figure 52 As shown, the upper left portion of the photoelectric conversion unit 120 can be shielded from light. (As indicated...) Figure 53 As shown, the upper right portion of the photoelectric conversion unit 120 can be shielded from light. (As indicated...) Figure 54 As shown, the lower left portion of the photoelectric conversion unit 120 can be shielded from light. Figure 55 As shown, the lower right part of the photoelectric conversion unit 120 can be shielded from light.

[0329] exist Figures 56 to 59In the example shown, a light-shielding layer 133 is provided to cover 50% of the photoelectric conversion unit 120. Sensitivity is reduced to 50%. For example, as... Figure 56 As shown, the left side of the photoelectric conversion unit 120 can be shielded from light. Figure 57 As shown, the right side of the photoelectric conversion unit 120 can be shielded from light. Figure 58 As shown, the upper portion of the photoelectric conversion unit 120 can be shielded from light. (As shown...) Figure 59 As shown, the lower part of the photoelectric conversion unit 120 can be shielded from light.

[0330] exist Figures 60 to 63 In the example shown, a light-shielding layer 133 is provided to cover 75% of the photoelectric conversion unit 120. Sensitivity is reduced to 25%. For example, as... Figure 60 As shown, the left and upper right portions of the photoelectric conversion unit 120 are shielded from light. Figure 61 As shown, the right side and upper left side of the photoelectric conversion unit 120 can be shielded from light. Figure 62 As shown, the left and lower right portions of the photoelectric conversion unit 120 can be shielded from light. Figure 63 As shown, the right side and lower left side of the photoelectric conversion unit 120 can be shielded from light.

[0331] <On-chip pixel array>

[0332] Various pixel columns, including the aforementioned pixels 3, can be set in chip 1. (Refer to...) Figure 64 Describe it.

[0333] Figure 64 This diagram illustrates an example of a schematic configuration of the light detection device 100. In this example, the pixel column arrangement patterns are generally classified as patterns PT1, PT2, PT3, and PT4 shown. The imaging pixel array 4p includes patterns PT1, PT2, and PT3. The ranging pixel array 4d includes pattern PT4.

[0334] Pattern PT1 is a pattern comprising a pixel column including imaging pixels 3p-OPB. Imaging pixels 3p-OPB are fully light-blocking imaging pixels (OPB pixels), where the photoelectric conversion unit 120 is completely blocked by the light-blocking layer 133. For example, a signal is obtained in a state where no light is input to the photoelectric conversion unit 120; in other words, a signal corresponding to a black level (OPB signal). One application example is dark current detection. By subtracting the signal from imaging pixels 3p-OPB from the signals of other imaging pixels 3p, a noise-reduced signal is obtained (noise reduction).

[0335] Pattern PT2 is a pattern of pixel columns including imaging pixel 3p-R, imaging pixel 3p-G, imaging pixel 3p-B, imaging pixel 3p-ZAF, imaging pixel 3p-ND, imaging pixel 3p-XT, etc. Imaging pixel 3p-XT is a pixel surrounded by imaging pixel 3p-OPB and can be used for crosstalk evaluation, etc.

[0336] Pattern PT3 is a pattern of pixel columns including imaging pixels 3p-R, imaging pixels 3p-G, imaging pixels 3p-B, imaging pixels 3p-ND, etc. Pattern PT4 is a pattern of pixel columns including ranging pixels 3d.

[0337] It should be noted that when multiple pixels 3 that detect light of the same color are arranged adjacent to each other, the signals from these pixels 3 can be added together and used. This addition is also referred to as pixel addition, merging, etc. The pixels 3 used for pixel addition are also included in at least a portion of patterns PT1, PT2, PT3, and PT4.

[0338] Reference Figures 65 to 78 Further description of some characteristics of each type of pixel 3 mentioned above.

[0339] <Example of color arrangement (color filter arrangement)>

[0340] Figures 65 to 70 This is an example diagram illustrating the color arrangement. It should be noted that the arrangement of lens 131 is not limited to the example shown. For example, in... Figures 65 to 69 In the example depicted, four (2×2) lenses 131 are arranged in one imaging pixel 3p, but this should not be a limitation, and any number of lenses 131 can be arranged in the X-axis and Y-axis directions.

[0341] exist Figure 65 The diagram shows an RGGB array. A pixel unit is repeatedly arranged, comprising one imaging pixel 3p-R, two imaging pixels 3p-G, and one imaging pixel 3p-B. Within each pixel unit, the imaging pixels 3p-R, 3p-G, and 3p-B are arranged according to a Bayer array configuration.

[0342] exist Figure 66, an RYYCy array is shown. The imaging pixel 3p that detects yellow (Y) light is referred to and illustrated as imaging pixel 3p-Y. The filter 132 of the imaging pixel 3p-Y is referred to and illustrated as filter 132Y. The filter 132Y transmits yellow light. The imaging pixel 3p that detects cyan (Cy) light is referred to and illustrated as imaging pixel 3p-Cy. The filter 132 of the imaging pixel 3p-Cy is referred to and illustrated as filter 132Cy. The filter 132Cy transmits cyan light. Pixel units each including one imaging pixel 3p-R, two imaging pixels 3p-Y, and one imaging pixel 3p-Cy are repeatedly arranged.

[0343] In Figure 67 , an RCCB array is shown. The imaging pixel 3p without the filter 132 is referred to and illustrated as imaging pixel 3p-C. Pixel units each including one imaging pixel 3p-R, two imaging pixels 3p-C, and one imaging pixel 3p-B are repeatedly arranged.

[0344] In Figure 68 , an RCCG array is shown. Pixel units each including one imaging pixel 3p-R, two imaging pixels 3p-C, and one imaging pixel 3p-G are repeatedly arranged.

[0345] In Figure 69 , a GRGB array is shown. Pixel units each including two imaging pixels 3p-G, one imaging pixel 3p-R, and one imaging pixel 3p-B are repeatedly arranged. The imaging pixel array section 4p includes pixel columns each containing a plurality of imaging pixels 3p that detect light of the same color. Specifically, in this example, there is a pixel column (green pixel column) including a plurality of imaging pixels 3p-G. In the one-dimensional scanning method, green light can be detected at the same timing and on the same optical axis. For example, the possibility of improving image quality is increased accordingly.

[0346] Figure 70 depicts an RGB line array. The imaging pixel array section 4p includes pixel columns each containing a plurality of imaging pixels 3p that detect light of the same color. Specifically, in this example, there are a pixel column (red pixel column) including a plurality of imaging pixels 3p-R, a pixel column (green pixel column) including a plurality of imaging pixels 3p-G, and a pixel column (blue pixel column) including a plurality of imaging pixels 3p-B. The red pixel column, the green pixel column, and the blue pixel column are arranged side by side in the row direction (X-axis direction). In the one-dimensional scanning method, light of various colors can be detected at the same timing and on the same optical axis. For example, the possibility of improving image quality is increased accordingly.

[0347] <Example of OPB Pixel Arrangement>

[0348] Figure 71 and Figure 72This is a diagram illustrating an example array of imaging pixels 3p-OPB. The imaging pixels 3p-OPB can be arranged in the outer periphery of the imaging pixel array portion 4p. For example, a light-shielding layer 133 can be arranged around the imaging pixel array portion 4p, and the imaging pixels 3p-OPB can be easily obtained by extending and using the light-shielding layer 133.

[0349] exist Figure 71 In the example depicted, the imaging pixel array 4p includes pixel columns (OPB pixel columns) containing multiple imaging pixels 3p-OPB. The multiple OPB pixel columns are arranged side-by-side in the row direction (X-axis direction). This arrangement can also be referred to as horizontal optical black (HOPB), etc. The viewing angle of the effective pixels can be easily guaranteed.

[0350] exist Figure 72 In the example depicted, the imaging pixel array 4p includes pixel rows (OPB pixel rows) containing multiple imaging pixels 3p-OPB. These multiple OPB pixel rows are arranged side-by-side in the column direction (Y-axis direction). This arrangement configuration can also be referred to as Vertical Optical Black (VOPB), etc. Dark current components can be detected for all rows within the same column.

[0351] <Example of sensitivity adjustment>

[0352] The aforementioned pixel 3 used for pixel addition and imaging pixel 3p-ND can be used for sensitivity adjustment. (Refer to...) Figures 73 to 82 Describe it.

[0353] Figure 73 This diagram illustrates an example of sensitivity adjustment. Sensitivity can be increased by summing and using signals from two or more pixels 3 (pixel summation). For example, signals from imaging pixels 3p of 18 images can be summed. As an example, 18 imaging pixels 3p arranged in 3 rows × 6 columns are illustrated. Signals from six imaging pixels 3p can also be summed. As an example, six imaging pixels 3p arranged in 1 row × 6 columns are illustrated.

[0354] It should be noted that a single imaging pixel 3p with a larger size can be arranged, instead of multiple imaging pixels 3p used for pixel addition. For example, a single imaging pixel 3p with the same size as the 18 or 6 imaging pixels 3p illustrated can be arranged. However, when multiple imaging pixels 3p of the same size are arranged for pixel addition, the imaging pixels 3p of the same size can be arranged on the entire imaging pixel array 4p, thus achieving the advantages of reduced variation and ease of manufacturing.

[0355] As described above, using a signal from a partially shaded imaging pixel 3p-ND in the photoelectric conversion unit 120 allows for a reduction in sensitivity (ND filter). For example, a signal from an imaging pixel 3p-ND (0.75 pixels) with 25% shaded area can be used. For example, a signal from an imaging pixel 3p-ND (0.5 pixels) with 50% shaded area can be used. For example, a signal from an imaging pixel 3p-ND (0.25 pixels) with 75% shaded area can be used.

[0356] Of course, normal sensitivity light detection can also be achieved by using signals from imaging pixels 3p that are not used for pixel addition and are not shaded.

[0357] like Figure 73 As the white arrows indicate, the light detection sensitivity increases with the number of pixels to be added. This allows for the detection of low-brightness (low-illuminance) light. Conversely, the light detection sensitivity decreases with the increase in the shading area of ​​the pixels. This allows for the detection of high-brightness (high-illuminance) light.

[0358] Figure 73 The various imaging pixels 3p depicted can be arranged as close as possible (e.g., adjacent to each other). Since the scan in a one-dimensional scanning method is continuous, this increases the possibility of improving image quality. (Refer to...) Figure 74 and Figure 75 Describe it.

[0359] Figure 74 and Figure 75 This is a diagram illustrating an example of a pixel array. Figure 74 In this example, 18 imaging pixels 3p-R and 18 imaging pixels 3p-G are shown as imaging pixels 3p that can be used, for example, for pixel addition. Multiple imaging pixels 3p-ND with different light-shielding ranges are also arranged in the photoelectric conversion unit 120. In this example, imaging pixels 3p-ND-R, 3p-ND-G, 50%, 50%, 75%, and 75% light-shielding are shown. These pixels are arranged in columns in the row direction (X-axis direction). Figure 75 As shown, the imaging pixel 3p with 50% light shading can be imaging pixel 3p-ZAF.

[0360] <Lustful Heart>

[0361] The location of the color center may differ between partially shaded 3p-ND and unshaded 3p imaging pixels. (Refer to...) Figures 76 to 78 Describe it.

[0362] Figures 76 to 78 This is an example diagram showing the color center. The color center of the imaging pixel 3p is referred to as and shown as color center 3g. Color center 3g corresponds to the centroid position of the portion of the imaging pixel 3p that is not shaded.

[0363] like Figure 76 As shown, the color center 3g of the unshaded imaging pixel 3p is the same as the center of the imaging pixel 3p. On the other hand, as... Figure 77 As shown, the color center 3g of the imaging pixel 3p-ND can be different from the center of the imaging pixel 3p-ND.

[0364] By designing a light-blocking pattern, the color center 3g of the 3p-ND imaging pixel can be made to be at the same position as the center of the 3p-ND imaging pixel. For example, as Figure 78 As shown, the color center 3g can be aligned with the center of the imaging pixel 3p-ND by diagonally blocking the imaging pixel 3p (diagonal arrangement of the opening portion) or by uniformly blocking the outer periphery of the imaging pixel 3p-ND.

[0365] <Application Example of Sensitivity Adjustment>

[0366] As described above, imaging pixels 3p with their sensitivity adjusted in various ways can be used. For example, in the case where multiple regions with different brightness levels are located in the same detection region A, image signals can be generated using signals acquired from each region with different sensitivities. (Refer to...) Figures 79 to 82 Describe it.

[0367] Figure 79 This is a diagram depicting an example of detection area A. Some areas within detection area A are schematically indicated by white arrows as areas A3, A4, and A5. The brightness of areas A3, A4, and A5 differs from each other. In this example, area A3 has the highest brightness, and area A5 has the lowest brightness. Area A4 has medium brightness. Light from area A3 has the highest brightness, and light from area A5 has the lowest brightness. Light from area A4 has medium brightness. When areas A3, A4, and A5 are not specifically distinguished, they are simply referred to as areas.

[0368] Figure 80 This diagram illustrates examples of signal acquisition with different sensitivities. A medium-sensitivity signal is obtained from imaging pixel 3p (a normal pixel that is not blocked). A low-sensitivity signal is obtained from partially blocked imaging pixel 3p-ND (blocked imaging pixel). A high-sensitivity signal is obtained by adding (pixel addition) the signals from multiple imaging pixels 3p used for pixel addition. By combining these signals of different sensitivities, a suitable image signal can be generated, for example, using signals obtained without saturating the photoelectric conversion unit 120.

[0369] The processing entity can be the imaging circuit section 5p ( Figure 6 (etc.), and more specifically, it may be signal processing circuitry 52p. For example, for each region, imaging circuitry 5p selects the signal most suitable for light detection from a plurality of signals with different sensitivities for that region, and generates an image signal for that region based on the selected signal. See also... Figure 81 and Figure 82 Describe it.

[0370] Figure 81 and Figure 82 This is a diagram illustrating an example of a process (imaging method) performed in the light detection device 100.

[0371] like Figure 81 As shown, in step S1, the imaging circuit unit 5p acquires a high-sensitivity signal. Multiple imaging pixels 3p used for pixel addition are used to detect light from the detection area A in one frame. The imaging circuit unit 5p adds the signals from the multiple imaging pixels 3p used for pixel addition. A high-sensitivity signal is obtained. Therefore, the obtained high-sensitivity signal can be stored in a memory. An example of a memory is the one described above. Figure 30 The frame memory M is described.

[0372] In step S2, the imaging circuit unit 5p acquires a medium sensitivity signal. Normal imaging pixels 3p (not used for pixel addition) are used to detect one frame of light from detection area A. The medium sensitivity signal is thus acquired and can be stored in memory.

[0373] In step S3, the imaging circuit unit 5p acquires a low-sensitivity signal. A partially shaded imaging pixel 3p-ND is used to detect one frame of light from the detection area A. The low-sensitivity signal is thus acquired and can be stored in memory.

[0374] The order of steps S1, S2 and S3 can be changed as needed.

[0375] In step S4, the imaging circuit unit 5p selects a signal for each region. For example, the imaging circuit unit 5p selects the most sensitive signal that is unsaturated among the high-sensitivity signal, medium-sensitivity signal, and low-sensitivity signal acquired in previous steps S1 to S3.

[0376] Figure 82An example of the specific processing in step S4 for one region is depicted. In step S41, the imaging circuit unit 5p determines whether the high-sensitivity signal is saturated. For example, when the signal level of the high-sensitivity signal is equal to or higher than a predetermined upper limit level, the imaging circuit unit 5p determines that the high-sensitivity signal is saturated. When the high-sensitivity signal is saturated (step S41: Yes), the process proceeds to step S42. Otherwise (step S41: No), the process proceeds to step S45.

[0377] In step S42, the imaging circuit unit 5p determines whether the medium-sensitivity signal is saturated. The determination method may be the same as the determination method in the case of the high-sensitivity signal described above. When the medium-sensitivity signal is saturated (step S42: Yes), the process proceeds to step S43. Otherwise (step S42: No), the process proceeds to step S44.

[0378] In steps S43 to S45, the imaging circuit unit 5p selects an unsaturated signal as the signal for the region. Specifically, in the case of step S43, the low-sensitivity signal is selected. In the case of step S44, the medium-sensitivity signal is selected. In the case of step S45, the high-sensitivity signal is selected.

[0379] For example, the processing of the above steps S41 to S45 is executed for each region (region A3, region A4, region A5, etc.) in the detection region A. A signal suitable for detecting light from each region is selected.

[0380] Returning to the reference Figure 81 , in step S5, the imaging circuit unit 5p generates an image signal based on the selected signal. The image signal is generated based on the selected signal for each region in the detection region A. By combining these signals, the image signal of the detection region A is obtained.

[0381] <Image Plane Phase Difference>

[0382] For example, the imaging pixels 3p-ZAF and the ranging pixels 3d-ZAF for image plane phase difference detection are as described above with reference to Figure 19 and Figures 41 to 51 etc. The imaging pixels 3p-ZAF and the ranging pixels 3d-ZAF are arranged in light-shielding patterns, such as a pattern in which the upper half is shielded from light, a pattern in which the lower half is shielded from light, a pattern in which the left half is shielded from light, and a pattern in which the right half is shielded from light. It can be used not only for autofocus but also for the above-described image plane phase difference ranging (for example, for short-distance ranging).

[0383] <XT (Crosstalk)>

[0384] Imaging pixel 3p-XT for crosstalk( Figure 64) can be used not only for basic crosstalk evaluation, but also for correction performed by, for example, signal processing. An example of the correction is using adjacent pixels to remove glare. For example, the method disclosed in PTL18 (WO 2022 / 239459) can be used.

[0385] <Conventional SPAD>

[0386] The photoelectric conversion unit 120 of the ranging pixel 3d may be a SPAD. As described above, the ranging pixels 3d are also arranged on the chip 1 on which the imaging pixels 3p are arranged.

[0387] Return to reference Figure 64 , for example, the various pixels 3 described above are arranged in the chip 1. By using such a chip 1 in a one-dimensional scanning method, any pixel column in the chip 1 can be selected, and light detection can be performed using the pixel column.

[0388] <TDI operation>

[0389] In the one-dimensional scanning method, the exposure time of the pixels 3 in one column is limited. Reference will be made to Figure 83 for description.

[0390] Figure 83 is a diagram depicting an example of the exposure time in the one-dimensional scanning method. The detection area A is divided into a plurality of line areas A line , and for each line area A line (in units of columns), light from the line area A line is detected.

[0391] The exposure time of one line area A line is determined by the frame rate (fps) and the resolution. The resolution here corresponds to the number of divisions of the detection area A. For example, in the case of 10 fps and 1920 divisions, the exposure time is (1 / 10) / 1920 = 52 microseconds. For imaging, an exposure time on the order of milliseconds to sub-milliseconds may be desirable, and the exposure time may be insufficient.

[0392] To compensate for the insufficient exposure time, time delay integration (TDI) can be employed. Light from the same portion of the same object OBJ is detected multiple times as light from the line area A line , and the obtained signals are added (integrated). The same effect as in the case of increasing the exposure time, that is, an increase in sensitivity, can be achieved.

[0393] In one embodiment, the configuration of the circuit unit 5 of the light detection device 100 can be designed to enable efficient signal addition required for TDI operation. As an example, reference will be made to Figures 84 to 97The ranging pixel 3d and the ranging circuit section 5d are described. Note that the same description can also be applied to the imaging pixel 3p and the imaging circuit section 5p, and where there is no contradiction, the ranging pixel 3d and the ranging circuit section 5d can be appropriately replaced with the imaging pixel 3p and the imaging circuit section 5p.

[0394] <Example of signal addition>

[0395] Figure 84 This is a diagram illustrating an example of a schematic configuration of a ranging pixel 3d and a ranging circuit section 5d. In this example, the ranging pixel 3d is configured to detect light of a corresponding color. Color information can also be acquired. For example, each ranging pixel 3d also includes a filter 132 that transmits light of the corresponding color.

[0396] The 3D ranging pixel for detecting blue light is called ranging pixel 3D-B. The 3D ranging pixel for detecting green light is called ranging pixel 3D-G. The 3D ranging pixel for detecting red light is called ranging pixel 3D-R. When they are not specifically distinguished, they are simply referred to as ranging pixels 3D.

[0397] Not only can color information be obtained from the detection results of imaging pixel 3p, but also from the detection results of ranging pixel 3d. For example, information that cannot be identified from one detection result alone can be supplemented by another. As a concrete example, when a person in front of a vehicle is obscured by the vehicle's headlights, the person cannot be identified from the visible light detection results of imaging pixel 3p alone, meaning the information may be insufficient. By using the detection results of ranging pixel 3d, the insufficient information can be compensated for.

[0398] Figure 84 An example of six pixel columns is depicted as multiple pixel columns, more specifically, one ranging pixel 3d in each pixel column. The column direction corresponds to the Y-axis direction. There are two or more ranging pixels 3d (pixels of the same color) that are included in different pixel columns and detect light of the same color. There are two or more ranging pixels 3d (pixels of different colors) that are included in different pixel columns and detect light of different colors.

[0399] Specifically, in Figure 84In the example shown, there are two ranging pixels 3d-B, two ranging pixels 3d-G, and two ranging pixels 3d-R. The two ranging pixels 3d-B are referred to and shown as ranging pixel 3d-B1 and ranging pixel 3d-B2 for distinction. The two ranging pixels 3d-G are referred to and shown as ranging pixel 3d-G1 and ranging pixel 3d-G2 for distinction. The two ranging pixels 3d-R are referred to and shown as ranging pixel 3d-R1 and ranging pixel 3d-R2 for distinction. When they are not specifically distinguished, they are simply referred to as ranging pixels 3d-B, ranging pixels 3d-G, and ranging pixels 3d-R.

[0400] The ranging circuit section 5d includes a memory section 55. The memory section 55 stores signals from the ranging pixels 3d of multiple pixel columns. Specifically, the memory section 55 includes multiple memories 550. Each memory 550 stores a signal from the ranging pixels 3d of the corresponding pixel column. This signal can be stored in the form of an analog voltage signal or in the form of a digital voltage signal, i.e., a bit signal (bit data).

[0401] The signal from each ranging pixel 3d is held in the corresponding memory 550. The signals from ranging pixels 3d-B1, 3d-G1, 3d-R1, 3d-B2, 3d-G2, and 3d-R2 are respectively referred to as signal sB1, signal sG1, signal sR1, signal sB2, signal sG2, and signal sR2. When they are not specifically distinguished, they are simply referred to as signals or each signal.

[0402] There are two or more memories 550 corresponding to two or more pixels of the same color, and there are also two or more memories 550 corresponding to two or more pixels of different colors. The memory unit 55 is configured to forward signals between any of the memories 550. Any memory may include two or more memories 550 corresponding to two or more pixels of the same color, and may also include two or more memories 550 corresponding to two or more pixels of different colors. This increases the flexibility in signal retention. See also... Figure 85 Describe it.

[0403] Figure 85 This is a diagram depicting an example of signal forwarding in memory unit 55. Some forwarding paths are schematically indicated by arrows. Signals held in any memory 550 can be forwarded to any other memory 550.

[0404] Specifically, such as Figure 85As shown, signal sR2 is forwarded from the memory 550 holding signal sR2 to any other memory 550. Signal sG2 is forwarded from the memory 550 holding signal sG2 to any other memory 550. Signal sB2 is forwarded from the memory 550 holding signal sB2 to any other memory 550. Signal sB1 is forwarded from the memory 550 holding signal sB1 to any other memory 550. Although not shown in the figure, this also applies to signals sR1 and sG1.

[0405] The type of 3D ranging pixel is not limited to 3D ranging pixel-B, 3D ranging pixel-G, and 3D ranging pixel-R. Other types of 3D ranging pixels can exist. (See reference...) Figure 86 Explanation example.

[0406] Figure 86 This is a diagram illustrating an example of a schematic configuration of the ranging pixel 3d and the ranging circuit section 5d. In this example, in addition to ranging pixels 3d-B, 3d-G, and 3d-R, there is also a ranging pixel 3d-W that detects white light. Two ranging pixels 3d-W are shown as an example, and are referred to as ranging pixel 3d-W1 and ranging pixel 3d-W2. The signals from ranging pixels 3d-W1 and 3d-W2 are referred to as signals sW1 and sW2. The memory section 55 also includes a memory 550 for holding signals sW1 and sW2. Signals can be forwarded among multiple memories 550 including these memories 550.

[0407] As described above, the signal can be held in the form of a bit signal. In this case, the signal corresponds to the digital signal converted by the conversion circuit 51d. (Refer to...) Figure 87 and Figure 88 Describe it.

[0408] Figure 87 and Figure 88 This is a diagram illustrating an example of a schematic configuration of the ranging pixel 3d and the ranging circuit section 5d. The conversion circuit 51d includes a plurality of conversion sections 510 corresponding to a plurality of pixel columns. Each conversion section 510 performs an analog-to-digital (AD) conversion on the signal from the ranging pixel 3d of the corresponding pixel column among the plurality of pixel columns. The signal after AD conversion is stored in the memory 550 of the memory section 55.

[0409] exist Figure 87 In, as mentioned above Figure 84As an example, six ranging pixels 3d corresponding to six pixel columns are shown. Six conversion units 510 corresponding to the six ranging pixels 3d are shown. Six memories 550 corresponding to the six conversion units 510 are shown. The signals after AD conversion by the conversion units 510 are stored as signals sB1, sG1, sR1, sB2, sG2, and sR2 in their respective memories 550 within the memory unit 55. These signals can be forwarded between any of the memories 550.

[0410] exist Figure 88 In, as mentioned above Figure 86 As an example, eight ranging pixels 3d corresponding to eight pixel columns are shown. Eight conversion units 510 corresponding to the eight ranging pixels 3d are shown. Eight memories 550 corresponding to the eight conversion units 510 are shown. The signals after AD conversion by the conversion units 510 are stored as signals sW1, sB1, sG1, sR1, sW2, sB2, sG2, and sR2 in their respective memories 550 within the memory unit 55. These signals can be forwarded between any of the memories 550.

[0411] By designing the connection between the ranging pixel 3d, the conversion circuit 51d, and the memory unit 55, the degree of freedom in signal holding can be further increased. (Refer to...) Figure 89 Explanation example.

[0412] Figure 89 This is a schematic example of the configuration of the ranging pixel 3d and the ranging circuit section 5d. The conversion circuit 51d is configured to selectively supply signals from the same ranging pixel 3d to any one of at least two of the plurality of conversion sections 510. The memory section 55 is configured to selectively supply signals from the same conversion section 510 to any one of at least two of the plurality of memories 550.

[0413] For example, such as Figure 89 As indicated by the thick arrow, the signal from the ranging pixel 3d-B1 is selectively supplied to one of the two conversion units 510. The signal from one conversion unit 510 is selectively supplied to one of the two memories 550.

[0414] Various selection circuits can be used to perform the selective supply described above. The circuits can be configured to have functions such as multiplexers (MUX), switches, etc.

[0415] By increasing the degree of freedom in signal retention as described above, TDI operation can be performed efficiently. The ranging circuit unit 5d uses the memory unit 55 to add signals from pixels in different pixel columns that have already detected light from the same part of the object OBJ. (Referencing...) Figures 90 to 93 Describe it.

[0416] Figures 90 to 93 This is a diagram illustrating an example of signal addition. (For example...) Figure 91 and Figure 92 The white arrow indicates that the object OBJ in detection area A has moved relative to the photodetector 100. For example, this movement may be caused by a change in the position of light illumination from a mirror or the like.

[0417] The two parts of object OBJ are referred to as, and shown as, part OBJ10 and part OBJ20. For ease of understanding, it is assumed here that part OBJ10 is red (emitting red light) and part OBJ20 is green (emitting green light).

[0418] like Figure 90 As shown, at time t10, red light from the first part OBJ10 is incident on ranging pixels 3d-B1, 3d-G1, and 3d-R1. This light is detected at ranging pixel 3d-R1. The signal sR1 from ranging pixel 3d-R1 is stored in the corresponding memory 550 in the memory section 55.

[0419] like Figure 91 As shown, at time t20, red light from the first part OBJ10 is incident on ranging pixels 3d-B2, 3d-G2, and 3d-R2. This light is detected at ranging pixel 3d-R2. The signal sR2 from ranging pixel 3d-R2 is stored in the corresponding memory 550 in the memory section 55.

[0420] In this example, both signal sR1 obtained at the previous time t10 and signal sR2 obtained at this time t20 are detection results of light from the same part of object OBJ (the first part OBJ10 in this example). By adding signals sR1 and sR2, a signal corresponding to twice the exposure time is obtained.

[0421] Figure 92 and Figure 93 The addition process is illustrated schematically. The time between time t10 and time t20 is shown as time t15.

[0422] like Figure 92As shown, signal sR1 is acquired at time t10. At time t15, signal sR1 is forwarded to another memory 550, more specifically in this example to the memory 550 corresponding to the ranging pixel 3d-R2. At time t20, signal sR2 is acquired. Signal sR2 is added to signal sR1 held in memory 550 and is maintained in that memory 550.

[0423] Figure 93 A timing diagram is depicted. In this example, a high level indicates validity. The ranging pixel 3d is exposed according to the synchronization signal, and the signal from the ranging pixel 3d is acquired and held. At time t15, the signal is forwarded between memory 550. At time t20, the ranging pixel 3d is exposed again according to the synchronization signal, and the signal from the ranging pixel 3d is acquired. This signal is added to the previously acquired and held signal.

[0424] The number of signals to be added can be any number greater than or equal to two, determined based on design, settings, etc. Signal processing such as noise reduction can be performed on the added signals.

[0425] For example, signal addition can be implemented as described above. (Refer to...) Figure 94 and Figure 95 Examples of configurations related to addition are described.

[0426] Figure 94 and Figure 95 This is a diagram showing an example of a configuration for signal addition.

[0427] exist Figure 94 In the example shown, the memory 550 of the memory unit 55 includes a counter 550a. The counter 550a increments and holds the signal. For example, a counter method capable of data exchange, as disclosed in PTL 10 (JP 2023-543709T), can be used.

[0428] exist Figure 95 In the example shown, in addition to memory 550, memory unit 55 also includes adder 550b. Adder 550b reads a signal held by memory 550, adds that signal to another signal, and writes the resulting signal back into memory 550. SRAM, flip-flops, etc., can be used. This is effective when multiple signals are added simultaneously or when other bit signals are added. Furthermore, it has the advantage that when data is exchanged, only the memory access address needs to be changed.

[0429] The addition of signals is not limited to the examples above, and signals can be added in various modes. For example, signals corresponding to red, green, and blue can be added at any ratio. An example ratio is 3:6:1. Luminosity can be easily created. A signal corresponding to cyan can also be obtained by adding signals corresponding to blue and green. White or complementary color filters can also be reproduced. Various multipliers, shift registers, adders, etc., can be used. Signals of different colors can be added after signals of the same color are added. By further adding signals corresponding to white, the possibility of further improving the signal-to-noise ratio (SN ratio) is increased.

[0430] <Application Example>

[0431] Some application examples of circuit configurations will be described. For example, a pixel-parallel ADC (as disclosed in PTL 12 (JP 2021-176206 A)) based on the configuration of PCT / JP2025 / 002012 described above can be used. Current mirror (CM) circuits, latching circuits, etc., can be present in the pixel (pixel ADC structure). There is a difference: in the case of SPAD, the output from the pixel is 1 bit, but in the case of pixel parallel, it is, for example, an 8-bit output. For SPAD signals, since the signal is captured instantaneously when light enters, high-speed sampling, such as 1 GHz, is required, and an asynchronous conversion unit is needed. On the other hand, in the case of ADC, sampling can be performed at only about 0.1 MHz, meaning that synchronous drive forwarding can be performed in the conversion unit instead. The method from the conversion unit to the signal generation unit can be essentially the same as for SPAD. Furthermore, the signal from the pixel is a digital signal, and all the methods described above for changing the connection can be applied.

[0432] When the conversion unit 510 performs AD conversion on the analog signal from the pixel, the position of the ADC may be different from that described above. For example, the signal from the pixel may be AD converted by an external column ADC (as disclosed in PTL 13 (JP 2017-055241 A)) based on the configuration of PCT / JP2025 / 002012.

[0433] Signal addition is not limited to digital addition, and may be analog addition. For example, analog addition may be performed by using a charge summing programmable gain amplifier (PGA). This technology is applied to the conversion unit. In addition, an ADC may be further provided in the conversion unit or between the conversion unit and signal generation. In the case of this technology, only the method of switching the connection between the pixels and the conversion unit is applied to analog addition. The memory 550 may be provided with a CM circuit, a current source circuit, etc., and may be capable of performing current value ON integration. The signal line from the pixel 3 may be connected to two or more memories 550. A circuit that performs AD conversion on the analog value held in the memory 550 may be further provided at a subsequent stage.

[0434] Various other modifications are possible. For example, as in PTL 4 (WO 2021 / 166542), a combination of a pixel structure that measures distance by receiving pulsed light and a pixel structure that acquires ambient light through RGB CF (color filter) may be used. Not only the CF differs between lines, but the ambient light acquisition pixels (pixels for imaging) may also be in a Bayer array. A combination such as a tetra-Bayer array may be used. The distance measurement pixels and the ambient light acquisition pixels may be located in different layers instead of the same layer. In this case, the distance measurement pixels may be SPADs, and the ambient light pixels may be pinned photodiodes. A method using an organic photoelectric conversion film may be used. For example, as disclosed in PTL 14 (JP 2019-169962 A), a two-layer structure of silicon (Si) may be used. The upper side may be used for ambient light, and the lower side may be used for distance measurement. Either PD or SPAD may be used. As disclosed in PTL 17 (JP 2017-59655 A), an organic material may be used to form a SPAD structure with RGB and Si, and the two-layer structure of Si may be used to apply the SPAD structure to distance measurement and ambient light.

[0435] <Example of TDI operation>

[0436] Figure 96 and 97 are diagrams illustrating an example of TDI operation. In Figure 96 the illustrated example, the distance measurement pixel array unit 4d includes a total of 32 pixel columns (RGBW pixel columns × 8), in which RGBW pixel columns each including a pixel column of distance measurement pixels 3d-R, a pixel column of distance measurement pixels 3d-G, a pixel column of distance measurement pixels 3d-B, and a pixel column of distance measurement pixels 3d-W are repeatedly arranged. The exposure is referred to as exposure ep.

[0437] As in Figure 97As shown, 32 exposures (ep) are performed from exposure ep1 to exposure ep32. The signals from eight RGBW pixel columns that have detected light from the same part of the object OBJ are summed. A signal corresponding to eight times the exposure time is obtained.

[0438] Dark current clamping

[0439] In the one-dimensional scanning method, there are two scanning paths: a forward path and a backward path. The imaging and ranging described above can be performed using a scan within one path. The use of the other path remains to be investigated. In one embodiment, the other path can be used to detect dark current. (Refer to...) Figures 98 to 103 Describe it.

[0440] Figures 98 to 103 This diagram illustrates an example of one-dimensional scanning. Imaging pixels 3p-R, 3p-G, and 3p-B are collectively referred to as and shown as imaging pixel 3p-RGB. Imaging pixel 3p-RGB is an imaging pixel 3p that detects light of the corresponding color, and can also be referred to as a color pixel. As pixel 3 provided in chip 1, in addition to imaging pixel 3p-RGB, imaging pixel 3p-OPB is also shown. The photoelectric conversion unit 120 of imaging pixel 3p can be a SPAD.

[0441] Figures 98 to 100 Light detection in the forward path is illustrated. Scanning mechanism 9 performs a line scan on detection area A so that light from detection area A is incident on imaging pixel 3p-RGB. Line area A line Move along the forward path indicated by arrow AR1, thereby scanning and detecting region A. Detection from line region A is performed using imaging pixels (3p-RGB). line The light.

[0442] like Figure 98 and 99 As shown, detection area A is finely scanned (high resolution), and from each line area A line The light is detected by the imaging pixels 3p-RGB. Based on the signal from the imaging pixels 3p-RGB, as shown in the figure... Figure 100 The image signal of the entire detection area A is shown.

[0443] Figures 101 to 103 Light detection in the backward path is illustrated. Scanning mechanism 9 performs a line scan on detection area A so that light from detection area A is incident on imaging pixel 3p-OPB. More specifically, in this example, scanning mechanism 9 performs a line scan on detection area A so that light from detection area A is incident on imaging pixel 3p-OPB at one time during the scan, and at another time on imaging pixel 3p-RGB. Line area A lineMove along the backward path indicated by arrow AR2, thereby scanning the detection area A. Detection from line area A is performed using imaging pixels 3p-OPB or 3p-RGB. line The light.

[0444] exist Figure 102 and 103 In the image, light detection in imaging pixel 3p-OPB and imaging pixel 3p-RGB are represented by shadows. The white area between them corresponds to light detection in imaging pixel 3p-OPB. In this example, the ratio of light detection time in imaging pixel 3p-RGB to light detection time in imaging pixel 3p-OPB is approximately 1:4. Regarding imaging pixel 3p-RGB, compared with the reference... Figure 99 and 100 Compared to the described forward path, detection region A is scanned while being sparsed (low resolution), and from each line region A line The light is detected by the imaging pixel 3p-RGB. This allows for the acquisition of a sparsified image signal. Outside of the time when light is detected by the imaging pixel 3p-RGB, light from each line region A is detected by the imaging pixel 3p-OPB. line The light. Based on the signal from the imaging pixel 3p-OPB, such as Figure 103 As shown, OPB signals are obtained for many parts of the detection area A.

[0445] As described above, the OPB signal is used for dark current detection. In the example above, the imaging circuit section 5p ( Figure 6 (etc.) Subtract the signal from the imaging pixel 3p-OPB obtained through the backward scan from the signal from the imaging pixel 3p-RGB obtained through the subsequent forward scan (digital clamping). The subtraction processing entity can be performed by the conversion circuit 51p of the imaging circuit unit 5p or by the signal processing circuit 52p.

[0446] Digital clamping can be performed without the need for additional components. Furthermore, image signals can be obtained by utilizing sparse scanning in the backward path.

[0447] The relationship between the forward and backward paths can be reversed. For example, a signal from imaging pixel 3p-RGB can be acquired through a scan in the backward path, and a signal from imaging pixel 3p-OPB can be acquired through a scan in the forward path.

[0448] In the forward path, signals from imaging pixel 3p-RGB and imaging pixel 3p-OPB can be acquired alternately. When imaging pixel 3p-OPB and imaging pixel 3p-RGB are arranged in the same pixel column, signals from these pixels can be acquired collectively. Dark current detection can be performed in both the forward and backward paths.

[0449] As described above, the scanning mechanism 9 can be an LATM or a polygonal mirror. In the case of a polygonal mirror, the aforementioned digital clamping can be performed at an angle not used for scanning.

[0450] <Dual-chip configuration of the sensor>

[0451] In one embodiment, the imaging pixel array 4p and the ranging pixel array 4d can be disposed in different chips. (Refer to...) Figure 104 Describe it.

[0452] Figure 104 This is a diagram illustrating an example of a schematic configuration of the light detection device 100. The imaging pixel array 4p and the ranging pixel array 4d are disposed in different chips. The chip 1 (imaging chip) in which the imaging pixel array 4p is disposed is referred to as chip 1-p. The chip (ranging chip) in which the ranging pixel array 4d is disposed is referred to as chip 1-d.

[0453] The optical detection device 100 includes a housing 90, a laser 91, a lens 92, a reflector 93, a wavelength-selective reflector 94, a lens 95, and a lens 96. The laser 91, lens 92, reflector 93, wavelength-selective reflector 94, lens 95, and lens 96 are arranged (accommodated) together with the chip 1 in the housing 90.

[0454] Laser 91 outputs ranging light. The ranging light from laser 91 is output via lens 92 and mirror 93 and emitted onto detection area A. The light from detection area A includes ranging light and visible light, and is guided by mirror 93 to wavelength-selective mirror 94. The ranging light is incident on the ranging pixel array 4d of chip 1-d via wavelength-selective mirror 94 and lens 95. The visible light is incident on the imaging pixel array 4p of chip 1-p via wavelength-selective mirror 94 and lens 96.

[0455] A wavelength-selective reflector 94, lens 95, and lens 96 constitute an optical system that guides the visible light and ranging light from detection area A to chip 1-p and chip 1-d, respectively. The configuration of the optical system is not limited to... Figure 104 The example shown illustrates this. Various optical elements can be used.

[0456] For example, as described above, imaging and ranging can also be performed using an imaging pixel array 4p and a ranging pixel array 4d with a dual-chip configuration. Since existing chips can be used, this offers the advantage of ease of implementation.

[0457] 2. Summary

[0458] For example, the aforementioned technology is specified as follows. One of the disclosed technologies is a light detection device 100. (See reference...) Figures 1 to 13 The light detection device 100 includes a chip 1 (first chip) and a chip 2 (second chip) stacked together to be electrically connected to each other; a pixel array section 4 disposed in the chip 1 and including a plurality of pixels 3, each pixel 3 including a photoelectric conversion section 120; and a circuit section 5 disposed in the chip 2 and electrically connected to the pixel array section 4 of the chip 1. The plurality of pixels 3 includes an imaging pixel 3p for detecting visible light and a ranging pixel 3d for detecting ranging light. The pixel array section 4 includes an imaging pixel array section 4p including a plurality of imaging pixels 3p arranged at least in the column direction (Y-axis direction), and a ranging pixel array section 4d including a plurality of ranging pixels 3d arranged at least in the column direction. The circuit section 5 includes an imaging circuit section 5p electrically connected to the imaging pixel array section 4p, and a ranging circuit section 5d electrically connected to the ranging pixel array section 4d. The light detection device 100 having a chip configuration capable of performing imaging and ranging can be implemented.

[0459] For reference Figure 4 , Figure 6 As described above, the ranging circuit section 5d may include a pixel circuit 50d, which generates an electrical signal in response to the generation of charge in the photoelectric conversion section 120 of the ranging pixel 3d, and the pixel circuit 50d of the ranging circuit section 5d may overlap with the ranging pixel array section 4d in a planar view (e.g., viewed in the Z-axis direction). As a result, for example, the transistor TR of the pixel circuit 50d may be made... Figure 4 The photoelectric conversion unit 120 is placed as close as possible to the ranging pixel array unit 4d.

[0460] For reference Figure 3 , Figure 6 As described above, the imaging pixel 3p of the imaging pixel array 4p may include a pixel circuit that generates an electrical signal in response to the generation of charge in the photoelectric conversion unit 120. Figure 3 The imaging circuit section 5p may include a conversion circuit 51p that performs AD conversion on signals from the pixel circuit, and the conversion circuit 51p of the imaging circuit section 5p may overlap with the imaging pixel array section 4p in a planar view. The conversion circuit 51p may be placed as close as possible to the pixel circuit.

[0461] For reference Figure 7As described above, the imaging pixel array 4p and the ranging pixel array 4d can be arranged at intervals between each other in the row direction (X-axis direction). (See reference...) Figure 10 As described above, the imaging pixel array 4p can be arranged at one end of the chip 1, and the ranging pixel array 4d can be arranged at the other end of the chip 1. (See reference...) Figures 11 to 13 As described above, the pixel array unit 4 may include a plurality of imaging pixel array units 4p and a plurality of ranging pixel array units 4d. (See reference...) Figure 11 , Figure 13 As described above, the imaging pixel array 4p and the ranging pixel array 4d can be arranged alternately in the row direction. For example, various planar arrangements as described above can be used.

[0462] For reference Figure 20 As described above, the imaging pixel array 4p and the ranging pixel array 4d can be arranged spaced apart from each other in the row direction (X-axis direction), and the light detection device 100 can include a ranging light cutoff filter 14p that covers the imaging pixel array 4p and a visible light cutoff filter 14d that covers the ranging pixel array 4d. Since the imaging pixel array 4p and the ranging pixel array 4d are arranged separately from each other, the ranging light cutoff filter 14p and the visible light cutoff filter 14d covering them can be easily arranged. For example, see reference... Figures 33 to 37 As described above, the optical detection device 100 may include a package 8 that houses chip 1 and chip 2, and a ranging light cutoff filter 14p and a visible light cutoff filter 14d may be disposed in the package 8.

[0463] For reference Figure 16 As described above, chip 1 may include an optical layer 13 configured to cover a plurality of pixels 3, comprising a photoelectric conversion unit 120 (photoelectric conversion layer 12), and the optical layer 13 may include a filter 132 that transmits light of the color detected by the imaging pixels 3p in the imaging pixel array 4p of the imaging pixel array 4p and the ranging pixel array 4d. For example, chip 1 comprising imaging pixel array 4p and ranging pixel array 4d having different cross-sectional structures may be stacked on chip 2.

[0464] Various types of diodes can be used as photoelectric conversion units 120. (See reference...) Figure 4 As described above, the photoelectric conversion unit of the ranging pixel 3d may include, for example, at least one of APD and SPAD.

[0465] For reference Figure 17As described above, the photoelectric conversion unit 120 of the imaging pixel 3p may include at least one of an APD and a SPAD, and the imaging pixel 3p may include a quenching resistor element (e.g., a transistor TR-IN) connected to the photoelectric conversion unit 120 to perform recharging for initializing the voltage caused by avalanche amplification of electrons by the photoelectric conversion unit 120. Imaging using either an APD or a SPAD is possible. (See reference...) Figure 25 , 26 As described above, the imaging circuit section 5p may include a counting circuit 511 that counts pulse signals generated in response to the generation of charge in the photoelectric conversion section 120 of the imaging pixel 3p, and a correction circuit 521 that corrects the counting result of the counting circuit 511 to obtain a signal with a level corresponding to the amount of light incident on the photoelectric conversion section 120 of the imaging pixel 3p. For example, by using linear correction, a high dynamic range is more likely to be obtained.

[0466] For reference Figures 27 to 29 As described above, the imaging pixel array 4p can have high resolution, the ranging pixel array 4d can have low resolution, and the circuit unit 5 can generate high-resolution point data in which imaging data obtained based on signals from imaging pixel 3p is associated with ranging data obtained based on signals from ranging pixel 3d. This can increase the resolution of the point cloud. The ranging data can indicate distance candidate values ​​for each region (e.g., region A1, region A12, region A2) in detection region A, and when the ranging data indicates multiple distance candidate values ​​for the same region (e.g., region A12) in detection region A, the circuit unit 5 can associate the ranging data of another region (e.g., region A2) with the imaging data of that region, wherein imaging data similar to the imaging data of that region is obtained in that other region. Appropriate distance candidate values ​​can be found.

[0467] For reference Figure 30 As described above, the imaging circuit unit 5p can sum the signals from imaging pixels 3p from multiple frames. For example, even when an APD or SPAD is used as the photoelectric conversion unit 120 of the imaging pixel 3p, flicker can be suppressed.

[0468] As described above, the imaging pixel array 4p and the ranging pixel array 4d can be arranged separately from each other. For example, as shown in the reference... Figure 31 , 32As described above, the imaging pixel array 4p and the ranging pixel array 4d can be arranged at intervals between each other in the row direction (X-axis direction), and the separation distance between the imaging pixel array 4p and the ranging pixel array 4d can have a length corresponding to N pixels, where N is an integer greater than or equal to 1. The light detection device 100 may include pseudo-pixels 3x disposed between the imaging pixel array 4p and the ranging pixel array 4d, and the pseudo-pixels 3x may have a structure different from that of the imaging pixel 3p. By arranging the pseudo-pixels 3x in manufacturing and maintaining a repeating pattern, pixel sensitivity can be increased. For example, the pseudo-pixels 3x may include a photoelectric conversion unit 120 and a light-shielding layer 133 disposed to cover the entire photoelectric conversion unit 120. The imaging pixel 3p may include a lens 131 that focuses incident light onto the photoelectric conversion unit 120, and the pseudo-pixels may not include a lens that focuses incident light onto the photoelectric conversion unit 120. Since the lens is not included, glare can be suppressed and reduced.

[0469] Multiple pixels 3 may include pixels in the photoelectric conversion unit 120 that are partially blocked from light. For example, refer to Figure 19 The light-blocking imaging pixels (3p-ZAF and 3p-ND imaging pixels) and references described above Figures 41 to 63 The light-shielding ranging pixels (ranging pixel 3d-ND and ranging pixel 3d-ZAF) described above correspond to this. These pixels can be used for image plane phase difference detection or for low-sensitivity detection.

[0470] Distance measurement can also be performed using image plane phase difference. (See reference...) Figures 41 to 49 As described above, the plurality of ranging pixels 3d may include a pair of shaded ranging pixels (ranging pixels 3d-ZAF), wherein different portions of the photoelectric conversion unit 120 are shaded, and the ranging circuit unit 5d can perform image plane phase difference ranging based on the distance between the pair of shaded ranging pixels and the light reception level of each of the pair of shaded ranging pixels. (See reference...) Figure 50 , 51 As described above, the ranging circuit unit 5d can perform short-range ranging using image plane phase difference ranging, and can perform long-range ranging using the dToF method. This provides the advantages of both ranging methods.

[0471] Various pixel 3s can be arranged. For example, as shown in the reference... Figure 64 , 69 As described in references 70, the imaging pixel array 4p may include a pixel column containing imaging pixels 3p that detect light of the same color. Figure 70As described above, the imaging pixel array 4p may include a red pixel column containing imaging pixels 3p-R for detecting red light, a green pixel column containing imaging pixels 3p-G for detecting green light, and a blue pixel column containing imaging pixels 3p-B for detecting blue light, and the red pixel column, green pixel column and blue pixel column may be arranged side by side in the row direction (X-axis direction).

[0472] For reference Figure 64 , 71 As described in references 72, the imaging pixel 3p may include a completely light-shielding imaging pixel (imaging pixel 3p-OPB), wherein the entire photoelectric conversion unit 120 is light-shielded, and the completely light-shielding imaging pixel may be arranged in the outer peripheral portion of the imaging pixel array unit 4p. For example, a completely light-shielding pixel can be easily obtained by extending and using the light-shielding layer 133 arranged around the imaging pixel array unit 4p. For example, as described in reference... Figure 72 As described above, the imaging pixel array 4p may include a pixel column comprising fully light-shielded imaging pixels (imaging pixels 3p-OPB), wherein the entire photoelectric conversion unit 120 is light-shielded. Dark current components can be detected for all rows in the same column.

[0473] For reference Figure 64 , 73 As described in sections 75, 79 to 82, the plurality of imaging pixels 3p may include imaging pixels 3p for pixel addition, normal pixels (imaging pixels 3p), and light-shielding pixels (imaging pixels 3p-ND) where the photoelectric conversion unit 120 is partially blocked. The imaging circuit unit 5p can generate an image signal for each region in the detection region A (e.g., region A3, region A4, and region A5) based on a signal that is unsaturated and has the highest sensitivity among a plurality of signals with different sensitivities. The plurality of signals with different sensitivities may include: a high-sensitivity signal obtained by adding signals from the imaging pixels used for pixel addition, a normal-sensitivity signal as a signal from the normal pixels, and a low-sensitivity signal as a signal from the light-shielding pixels. Therefore, an appropriate image signal can be generated.

[0474] For reference Figures 84 to 97As described above, the circuit unit 5 (e.g., the ranging circuit unit 5d) can use a memory unit 55 that holds signals from pixels 3 (e.g., ranging pixels 3d) in multiple pixel columns to add signals from pixels 3 in different pixel columns that have detected light from the same part (e.g., the first part OBJ 10) of the object OBJ. The memory unit 55 can include multiple memories 550, each memory 550 holding a signal from a corresponding one of the multiple pixels 3, and any memory in the memories 550 can forward signals to each other. By increasing the degree of freedom in holding signals, TDI operation can be performed efficiently. For example, pixels 3 in multiple pixel columns can include two or more pixels of the same color (e.g., ranging pixels 3d-B1 and ranging pixels 3d-B2, ranging pixels 3d-G1 and ranging pixels 3d-G2, ranging pixels 3d-R1 and ranging pixels 3d-R2), the same color pixels are included in different pixel columns and detect light of the same color, and any memory in the memories 550 can include two or more memories 550 corresponding to two or more pixels of the same color. Furthermore, pixels 3 in multiple pixel columns may include two or more pixels of different colors (e.g., ranging pixel 3d-B, ranging pixel 3d-G, and ranging pixel 3d-R), with different colored pixels included in different pixel columns and detecting different colors of light, and any one of the memories in memory 550 may include two or more memories 550 corresponding to the two or more pixels of different colors. Adding signals between different colors is also possible.

[0475] The signal can be an analog signal or a digital signal. For example, in the latter case, as referenced... Figure 87 , Figure 88 As described above, the circuit unit 5 (e.g., the ranging circuit unit 5d) may include a conversion circuit (e.g., conversion circuit 51d) that performs AD conversion on signals from pixels 3 (e.g., ranging pixel 3d) in a plurality of pixel columns, and the memory unit 55 may store the signals after AD conversion.

[0476] For reference Figure 89 As described above, the conversion circuit (e.g., conversion circuit 51d) may include a plurality of conversion units 510, each conversion unit 510 performing AD conversion on a signal from a pixel 3 (e.g., ranging pixel 3d) in a corresponding pixel column of a plurality of pixel columns, and the conversion circuit may be configured to selectively supply signals from the same pixel 3 to any one of at least two of the plurality of conversion units 510. The memory unit 55 may be configured to selectively supply signals from the same pixel 3 to any one of at least two of the plurality of memories 550. The degree of freedom for holding the signal can be further increased.

[0477] For reference Figure 94 As described above, the memory unit 55 may include a counter 550a that increments and holds a signal. (See reference...) Figure 95 As described above, the memory unit 55 may include an adder 550b that reads a signal held by the memory 550, adds the signal to another signal, and writes the resulting signal into the memory 550. For example, signals can be added in this manner.

[0478] For reference Figure 5 As described above, the light detection device 100 may include a scanning mechanism 9 that performs a line scan of the detection area A, so that light from the detection area A is incident on a plurality of imaging pixels (pixel columns) arranged in the column direction (Y-axis direction). Imaging and ranging can be performed using a one-dimensional scanning method.

[0479] For reference Figures 98 to 103 As described above, the imaging pixel 3p may include: a color pixel (imaging pixel 3p-RGB) that detects light of the corresponding color; and a completely opaque imaging pixel (imaging pixel 3p-OPB), wherein the entire photoelectric conversion unit 120 is opaque, and the scanning mechanism 9 can perform a line scan on the detection area A, so that light from the detection area A is incident on the color pixel in one of the forward and backward paths of the scan (e.g., the forward path), and the light from the detection area A is incident on the completely opaque imaging pixel in the other path (e.g., the backward path). One of the paths can be used to detect dark current and for noise reduction. For example, the imaging circuit unit 5p can subtract the signal from the completely opaque imaging pixel (imaging pixel 3p-OPB) obtained by scanning in the other path from the signal from the color pixel (imaging pixel 3p-RGB) obtained by scanning in one path.

[0480] For reference Figure 104 The dual-chip configuration of the sensor described above is also possible. The light detection device 100 may include: an imaging chip (chip 1-p) provided with imaging pixels 3p (imaging pixel array 4p) for detecting visible light; a ranging chip (chip 1-d) provided with ranging pixels 3d (ranging pixel array 4d) for detecting ranging light; and an optical system (e.g., wavelength-selective mirror 94, lens 95, and lens 96) for guiding visible light from the detection area A to the imaging chip and guiding ranging light to the ranging chip.

[0481] 3. Application Examples

[0482] The following describes some application examples of the optical detection device 100 described above.

[0483] 3.1 Application Examples for Moving Bodies

[0484] The technology disclosed herein (the Technology) can be applied to a variety of products. For example, the Technology disclosed herein can be implemented as a device mounted on any type of mobile body (such as vehicles, electric vehicles, hybrid electric vehicles, motorcycles, bicycles, personal mobility devices, aircraft, drones, ships, and robots).

[0485] Figure 105 This is a block diagram illustrating an example configuration of a vehicle control system, which is an example of a mobile body control system to which the technology according to embodiments of the present disclosure can be applied.

[0486] The vehicle control system 12000 includes multiple electronic control units interconnected via a communication network 12001. Figure 105 In the example shown, the vehicle control system 12000 includes a driving system control unit 12010, a body system control unit 12020, an external information detection unit 12030, an internal information detection unit 12040, and an integrated control unit 12050. Furthermore, a microcomputer 12051, an audio / image output unit 12052, and an in-vehicle network interface (I / F) 12053 are shown as the functional configuration of the integrated control unit 12050.

[0487] The driving system control unit 12010 controls the operation of devices related to the vehicle's driving system according to various programs. For example, the driving system control unit 12010 is used as a control device for drive force generating devices such as internal combustion engines and drive motors that generate driving force for the vehicle, a control device for drive force transmission mechanisms that transmit driving force to the wheels, a control device for steering mechanisms that adjust the vehicle's steering angle, and a control device for braking devices that generate braking force for the vehicle.

[0488] The body system control unit 12020 controls the operation of various devices installed on the vehicle body according to various programs. For example, the body system control unit 12020 is used as a control device for keyless entry systems, smart key systems, power window devices, or various lights such as headlights, reversing lights, brake lights, turn signals, fog lights, etc. In this case, radio waves or signals from various switches sent from mobile devices that serve as alternatives to keys can be input to the body system control unit 12020. The body system control unit 12020 receives these input radio waves or signals and controls the vehicle's door locking devices, power window devices, lights, etc.

[0489] The exterior information detection unit 12030 detects information about the exterior of the vehicle, including the vehicle control system 12000. For example, the exterior information detection unit 12030 is connected to the imaging unit 12031. The exterior information detection unit 12030 causes the imaging unit 12031 to image an image of the exterior of the vehicle and receives the image. Based on the received image, the exterior information detection unit 12030 can perform processing such as detecting objects like people, vehicles, obstacles, signs, and text on the road surface, or detecting their distance.

[0490] The imaging unit 12031 is an optical sensor that receives light and outputs an electrical signal corresponding to the amount of light received. The imaging unit 12031 can output the electrical signal as an image, or it can output the electrical signal as information about the measured distance. Furthermore, the light received by the imaging unit 12031 can be visible light or invisible light, such as infrared light.

[0491] The in-vehicle information detection unit 12040 detects information about the interior of the vehicle. The in-vehicle information detection unit 12040 is connected, for example, to a driver state detection unit 12041 that detects the driver's state. The driver state detection unit 12041 includes, for example, a camera that images the driver. Based on the detection information input from the driver state detection unit 12041, the in-vehicle information detection unit 12040 can calculate the driver's fatigue level or the driver's level of concentration, or determine whether the driver is dozing off.

[0492] The microcomputer 12051 can calculate control target values ​​for the drive force generating device, steering mechanism, or braking device based on information about the vehicle's interior or exterior obtained from the external information detection unit 12030 or the internal information detection unit 12040, and output control commands to the driving system control unit 12010. For example, the microcomputer 12051 can perform cooperative control aimed at implementing functions of advanced driver assistance systems (ADAS), including collision avoidance or impact mitigation, distance-based following, speed maintenance, collision warning, lane departure warning, etc.

[0493] Furthermore, the microcomputer 12051 can control the drive force generating device, steering mechanism, braking device, etc., based on information about the exterior or interior of the vehicle obtained by the external information detection unit 12030 or the internal information detection unit 12040, to perform cooperative control and other functions aimed at enabling the vehicle to drive automatically without relying on driver operation.

[0494] Additionally, the microcomputer 12051 can output control commands to the body system control unit 12020 based on information about the exterior of the vehicle obtained by the exterior information detection unit 12030. For example, the microcomputer 12051 can perform coordinated control aimed at preventing glare by controlling the headlights to change from high beam to low beam, for example, based on the position of the vehicle in front or oncoming vehicles detected by the exterior information detection unit 12030.

[0495] The sound / image output unit 12052 transmits an output signal of at least one of sound and image to an output device capable of visually or audibly notifying the occupants of the vehicle or the exterior of the vehicle. Figure 105 In the example, audio speaker 12061, display unit 12062, and dashboard 12063 are illustrated as output devices. Display unit 12062 may include, for example, at least one of an in-vehicle display and a head-up display.

[0496] Figure 106 This is a diagram illustrating an example of the mounting position of the imaging unit 12031.

[0497] exist Figure 106 In the imaging unit 12031, there are imaging units 12101, 12102, 12103, 12104 and 12105.

[0498] Imaging units 12101, 12102, 12103, 12104, and 12105 are deployed in locations such as the front nose, side mirrors, rear bumper, and rear door of vehicle 12100, and the upper portion of the windshield inside the vehicle. Imaging unit 12101 located at the front nose and imaging unit 12105 located at the upper portion of the windshield inside the vehicle primarily acquire images of the front of vehicle 12100. Imaging units 12102 and 12103 located at the side mirrors primarily acquire images of the sides of vehicle 12100. Imaging unit 12104 located at the rear bumper or rear door primarily acquires images of the rear of vehicle 12100. Imaging unit 12105 located at the upper portion of the windshield inside the vehicle is primarily used to detect vehicles ahead, pedestrians, obstacles, signals, traffic signs, lanes, etc.

[0499] Incidentally, Figure 106 An example of the imaging range of imaging units 12101 to 12104 is depicted. Imaging range 12111 represents the imaging range of imaging unit 12101 located on the front nose. Imaging ranges 12112 and 12113 represent the imaging ranges of imaging units 12102 and 12103 located on the side mirrors, respectively. Imaging range 12114 represents the imaging range of imaging unit 12104 located on the rear bumper or rear door. For example, a bird's-eye view of the vehicle 12100 viewed from above is obtained by overlaying image data captured by imaging units 12101 to 12104.

[0500] At least one of the imaging units 12101 to 12104 may have the function of obtaining distance information. For example, at least one of the imaging units 12101 to 12104 may be a stereo camera composed of multiple imaging elements, or may be an imaging element having pixels for phase difference detection.

[0501] For example, the microcomputer 12051 can determine the distance to each three-dimensional object within the imaging range 12111 to 12114 and the time change of that distance (relative speed to the vehicle 12100) based on distance information obtained from the imaging units 12101 to 12104, and thereby extract the nearest three-dimensional object, in particular, that exists on the driving path of the vehicle 12100 and is traveling in substantially the same direction as the vehicle 12100 at a predetermined speed (e.g., equal to or greater than 0 km / h), as the preceding vehicle. Furthermore, the microcomputer 12051 can preset a following distance to maintain ahead of the preceding vehicle and execute automatic braking control (including follow-stop control), automatic acceleration control (including follow-start control), etc. Therefore, cooperative control aimed at enabling the vehicle to drive automatically without relying on driver operation, etc., can be performed.

[0502] For example, microcomputer 12051 can classify three-dimensional object data about three-dimensional objects into three-dimensional object data of two-wheeled vehicles, standard-sized vehicles, large vehicles, pedestrians, utility poles, and other three-dimensional objects based on distance information obtained from imaging units 12101 to 12104, extract the classified three-dimensional object data, and use the extracted three-dimensional object data for automatic obstacle avoidance. For example, microcomputer 12051 identifies obstacles around vehicle 12100 as obstacles that the driver of vehicle 12100 can visually recognize and obstacles that are difficult for the driver of vehicle 12100 to visually recognize. Then, microcomputer 12051 determines a collision risk indicating the risk of collision with each obstacle. If the collision risk is equal to or higher than a set value and therefore there is a possibility of collision, microcomputer 12051 outputs a warning to the driver via audio speaker 12061 or display unit 12062, and performs forced deceleration or evasive steering via driving system control unit 12010. Microcomputer 12051 can thus assist driving to avoid collisions.

[0503] At least one of the imaging units 12101 to 12104 can be an infrared camera that detects infrared light. The microcomputer 12051 can identify a pedestrian, for example, by determining whether a pedestrian exists in the images captured by the imaging units 12101 to 12104. This pedestrian identification is performed, for example, by a procedure that extracts feature points from the images captured by the imaging units 12101 to 12104, which are infrared cameras; and a procedure that determines whether an object is a pedestrian by performing pattern matching processing on a series of feature points representing the outline of the object. When the microcomputer 12051 determines that a pedestrian exists in the images captured by the imaging units 12101 to 12104 and thus identifies the pedestrian, the sound / image output unit 12052 controls the display unit 12062 so that a square outline for emphasis is displayed superimposed on the identified pedestrian. The sound / image output unit 12052 can also control the display unit 12062 so that icons or the like representing pedestrians are displayed at a desired location.

[0504] Examples of vehicle control systems to which the technology according to this disclosure can be applied have been described above. The technology according to this disclosure can be applied to the imaging unit 12031 in the above configuration. Both imaging and ranging functions can be provided efficiently.

[0505] 3.2 Other Application Examples

[0506] Applications beyond mobile devices are also possible. Examples of other applications include wearable devices. For instance, the light detection device 100 could be mounted on and used with smart glasses.

[0507] It should be noted that the effects described in this disclosure are merely illustrative and are not limited to the disclosed content. Other effects may also be achieved.

[0508] While embodiments of this disclosure have been described, the technical scope of this disclosure is not limited to the embodiments described above, and various modifications can be made without departing from the spirit of this disclosure. Furthermore, components from different embodiments and modifications can be appropriately combined.

[0509] It should be noted that this technology can be configured as follows.

[0510] (1) A light detection device, comprising: A first chip and a second chip, which are stacked together to have an electrical connection with each other; A pixel array is disposed in a first chip and includes a plurality of pixels, each of the plurality of pixels including a photoelectric conversion unit; and A circuit section, wherein the circuit section is disposed in the second chip and electrically connected to the pixel array section of the first chip, wherein... The plurality of pixels includes: Imaging pixels are configured to detect visible light; and The ranging pixels are configured to detect ranging light. The pixel array portion includes: An imaging pixel array includes at least a plurality of said imaging pixels arranged along a column direction; and The ranging pixel array includes at least a plurality of ranging pixels arranged along the column direction, and The circuit section includes: The imaging circuit section is electrically connected to the imaging pixel array section; and The ranging circuit section is electrically connected to the ranging pixel array section.

[0511] (2) The optical detection device according to (1), wherein, The ranging circuit includes a pixel circuit that generates an electrical signal in response to the generation of charge in the photoelectric conversion section of the ranging pixel. The pixel circuit of the ranging circuit section overlaps with the ranging pixel array section in the plan view.

[0512] (3) The optical detection device according to (1) or (2), wherein, The imaging pixel of the imaging pixel array includes a pixel circuit, which generates an electrical signal in response to the generation of charge in the photoelectric conversion unit. The imaging circuit section includes a conversion circuit that performs AD conversion on the signal from the pixel circuit, and The conversion circuit of the imaging circuit section overlaps with the imaging pixel array section in the plan view.

[0513] (4) The light detection device according to any one of (1)-(3), wherein the imaging pixel array and the ranging pixel array are arranged at intervals from each other along the row direction.

[0514] (5) The optical detection device according to (4), wherein

[0515] The imaging pixel array is arranged at one end of the first chip, and

[0516] The ranging pixel array is arranged at the other end of the first chip.

[0517] (6) The light detection apparatus according to any one of (1)-(4), wherein the pixel array portion comprises: The plurality of said imaging pixel arrays; and Multiple ranging pixel arrays.

[0518] (7) The light detection device according to (6), wherein the imaging pixel array and the ranging pixel array are arranged alternately along the row direction.

[0519] (8) The optical detection apparatus according to any one of (1)-(7), wherein

[0520] The imaging pixel array and the ranging pixel array are arranged at intervals along the row direction. The optical detection device also includes: A ranging light cutoff filter is configured to cover the imaging pixel array; and A visible light cutoff filter is configured to cover the ranging pixel array.

[0521] (9) The photodetector according to (8) further includes a package configured to accommodate the first chip and the second chip, wherein, The ranging light cutoff filter and the visible light cutoff filter are disposed in the package.

[0522] (10) The optical detection apparatus according to any one of (1)-(9), wherein

[0523] The first chip includes an optical layer configured to cover the photoelectric conversion section of the plurality of pixels, and

[0524] The optical layer includes a filter that transmits light of a color detected by the imaging pixels in the imaging pixel array of the imaging pixel array and the ranging pixel array.

[0525] (11) The light detection device according to any one of (1)-(10), wherein the photoelectric conversion unit of the ranging pixel includes at least one of an avalanche photodiode (APD) and a single-photon avalanche diode (SPAD).

[0526] (12) The optical detection apparatus according to any one of (1)-(11), wherein

[0527] The photoelectric conversion unit of the imaging pixel includes at least one of APD and SPAD, and

[0528] The imaging pixel includes a quenching resistor element connected to the photoelectric conversion unit to perform a recharging for initializing the voltage caused by the avalanche amplification of electrons by the photoelectric conversion unit.

[0529] (13) The light detection device according to any one of (1)-(12), wherein the imaging circuit unit comprises: A counting circuit is configured to count pulse signals generated in response to the generation of charge in the photoelectric conversion section of the imaging pixel; and A correction circuit is configured to correct the counting result of the counting circuit to obtain a signal of a level corresponding to the amount of light incident on the photoelectric conversion unit of the imaging pixel.

[0530] (14) The optical detection apparatus according to any one of (1)-(13), wherein

[0531] The imaging pixel array has high resolution. The ranging pixel array has low resolution, and The circuitry generates high-resolution point data, wherein imaging data obtained based on signals from the imaging pixels is associated with ranging data obtained based on signals from the ranging pixels.

[0532] (15) The optical detection device according to (14), wherein

[0533] The ranging data indicates the distance candidate values ​​for each region within the detection area, and

[0534] When the ranging data indicates multiple distance candidate values ​​for the same area in the detection area, the circuit unit will associate the ranging data of another area with the imaging data of the area that is similar to the imaging data of the area.

[0535] (16) The optical detection apparatus according to any one of (1)-(15), wherein

[0536] The photoelectric conversion unit of the imaging pixel includes at least one of APD and SPAD, and

[0537] The imaging circuitry adds signals from the imaging pixels across multiple frames.

[0538] (17) The optical detection apparatus according to any one of (1)-(16), wherein

[0539] The imaging pixel array and the ranging pixel array are arranged at intervals along the row direction, and

[0540] The separation distance between the imaging pixel array and the ranging pixel array has a length corresponding to N pixels, where N is an integer greater than or equal to 1.

[0541] (18) The light detection device according to (17) further includes a pseudo pixel disposed between the imaging pixel array and the ranging pixel array, wherein

[0542] The pseudo-pixel has a structure different from that of the imaging pixel.

[0543] (19) The light detection device according to (18), wherein the pseudo pixel comprises: Photoelectric conversion unit; and A light-shielding layer is configured to cover the entire photoelectric conversion unit.

[0544] (20) The optical detection device according to (18) or (19), wherein

[0545] The imaging pixel includes a lens that converges incident light onto the photoelectric conversion unit, and

[0546] The pseudo-pixel does not include a lens that focuses incident light onto the photoelectric conversion unit.

[0547] (21) The light detection device according to any one of (1)-(20), wherein the plurality of pixels includes pixels in which the photoelectric conversion section is partially blocked.

[0548] (22) The optical detection apparatus according to any one of (1)-(21), wherein

[0549] The plurality of ranging pixels includes a pair of light-shielding ranging pixels in which different portions of the photoelectric conversion unit are blocked from light, and

[0550] The ranging circuit performs image plane phase difference ranging based on the distance between the pair of shaded ranging pixels and the light reception level of each of the pair of shaded ranging pixels.

[0551] (23) The optical detection device according to (22), wherein the ranging circuit unit

[0552] Short-range ranging is performed using the image plane phase difference ranging method, and

[0553] Long-distance ranging is performed using the direct time-of-flight (dToF) method.

[0554] (24) The light detection device according to any one of (1)-(23), wherein the imaging pixel array comprises a pixel column, the pixel column comprising imaging pixels that detect light of the same color.

[0555] (25) The light detection device according to (24), wherein the imaging pixel array unit includes: The red pixel column includes imaging pixels that detect red light; The green pixel column includes imaging pixels that detect green light; and The blue pixel column includes imaging pixels that detect blue light, among which... The red pixel column, the green pixel column, and the blue pixel column are arranged side by side along the row direction.

[0556] (26) The optical detection apparatus according to any one of (1)-(25), wherein

[0557] The imaging pixel includes a completely light-blocking imaging pixel in which the entire photoelectric conversion unit is blocked from light, and

[0558] The fully light-blocking imaging pixels are arranged in the outer peripheral portion of the imaging pixel array.

[0559] (27) The light detection device according to any one of (1)-(26), wherein the imaging pixel array comprises a pixel column, the pixel column comprising a completely light-blocking imaging pixel in which the entire photoelectric conversion unit is blocked.

[0560] (28) The optical detection apparatus according to any one of (1)-(27), wherein

[0561] The plurality of imaging pixels includes: Imaging pixels used for pixel addition; Normal pixels; and The photoelectric conversion unit is partially blocked by light-shielding pixels. For each region in the detection area, the imaging circuit generates an image signal for that region based on the unsaturated signal with the highest sensitivity among multiple signals of different sensitivities. The multiple signals with different sensitivities include: A high-sensitivity signal obtained by adding the signals from the imaging pixels used for pixel addition; As a normal sensitivity signal from the normal pixels; and As a low-sensitivity signal from the light-blocking pixel.

[0562] (29) The optical detection apparatus according to any one of (1)-(28), wherein

[0563] The circuit section utilizes a memory section that stores signals from pixels in multiple pixel columns to add signals from pixels located in different pixel columns that detect light from the same part of the object, and

[0564] The memory unit includes a plurality of memories, each memory holding a signal from a corresponding pixel among the plurality of pixels, and any of the memories are configured to forward the signals to each other.

[0565] (30) The optical detection device according to (29), wherein

[0566] The pixels in the plurality of pixel columns include two or more pixels of the same color, the two or more pixels of the same color being included in different pixel columns and detecting light of the same color, and

[0567] Any of the aforementioned memories includes two or more memories corresponding to the two or more pixels of the same color.

[0568] (31) The optical detection device according to (29) or (30), wherein

[0569] The pixels in the plurality of pixel columns include two or more pixels of different colors, the two or more pixels of different colors being included in different pixel columns and detecting different colors of light, and

[0570] Any of the aforementioned memories includes two or more memories corresponding to two or more pixels of different colors.

[0571] (32) The optical detection apparatus according to any one of (29) to (31), wherein, The circuit section includes a conversion circuit that performs AD conversion on signals from pixels in the plurality of pixel columns, and The memory unit stores the signal after the AD conversion.

[0572] (33) The optical detection device according to (32), wherein, The conversion circuit includes multiple conversion units, each of which performs AD conversion on signals from a corresponding pixel in one of the multiple pixel columns, and The conversion circuit is configured to selectively supply signals from the same pixel to any one of at least two of the plurality of conversion units.

[0573] (34) The optical detection device according to (32) or (33), wherein, The conversion circuit includes multiple conversion units, each of which performs AD conversion on signals from a corresponding pixel in one of the multiple pixel columns, and The memory unit is configured to selectively supply signals from the same pixel to any one of at least two of the plurality of memories.

[0574] (35) The light detection device according to any one of (29) to (34), wherein the memory unit includes a counter for counting and holding the signal.

[0575] (36) The light detection apparatus according to any one of (29) to (34), wherein the memory unit includes an adder that reads a signal held by the memory, adds the signal to another signal, and writes the resulting signal into the memory.

[0576] (37) The light detection device according to any one of (1) to (36) further includes a scanning mechanism that performs a line scan on the detection area such that light from the detection area is incident on a plurality of imaging pixels arranged along the column direction.

[0577] (38) The optical detection device according to (37), wherein, The imaging pixels include: Detecting the color pixels of the corresponding color of light; and The entire photoelectric conversion unit is completely shielded from light, forming a fully light-blocking imaging pixel. The scanning mechanism performs a line scan on the detection area such that light from the detection area is incident on a color pixel in one of the forward and backward paths of the scan, and that light from the detection area is incident on a completely opaque imaging pixel in the other path.

[0578] (39) The light detection device according to (38), wherein the imaging circuit subtracts the signal from the fully opaque imaging pixel obtained by scanning through the other path from the signal from the color pixel obtained by scanning through the one path.

[0579] (40) A light detection device, comprising: An imaging chip, equipped with imaging pixels that detect visible light; The ranging chip is equipped with ranging pixels for detecting ranging light; and An optical system guides visible light from the detection area to the imaging chip and guides ranging light to the ranging chip.

[0580] List of reference numerals

[0581] 100 optical detection equipment

[0582] 1 chip

[0583] 1a Joint surface

[0584] 1-1 Chip

[0585] 1-2 chips

[0586] 1-D chip

[0587] 1-p chip

[0588] 2 chips

[0589] 2a Joint surface

[0590] 11 Wiring Layer

[0591] 111 Wiring Line

[0592] 12 Photoelectric conversion layer

[0593] 12-1 Photoelectric conversion layer

[0594] 12-2 Photoelectric conversion layer

[0595] 120 Photoelectric Conversion Unit

[0596] 120C cathode

[0597] 13 Optical Layer

[0598] 131 Lens

[0599] 132 filter

[0600] 132B filter

[0601] 132Cy filter

[0602] 132G filter

[0603] 132IR filter

[0604] 132R filter

[0605] 132Y filter

[0606] 133 Light-shielding layer

[0607] 14 Cut-off filter

[0608] 14d visible light cutoff filter

[0609] 14p rangefinding light cutoff filter

[0610] 21 Wiring Layer

[0611] 211 Wiring Line

[0612] 3 pixels

[0613] 3D ranging pixels

[0614] 3d-B ranging pixels

[0615] 3D-G ranging pixels

[0616] 3D-ND ranging pixels

[0617] 3D-R ranging pixels

[0618] 3D-W ranging pixels

[0619] 3D-ZAF ranging pixels

[0620] 3g of color essence

[0621] 3p imaging pixels

[0622] 3p-B imaging pixels

[0623] 3p-C imaging pixels

[0624] 3p-Cy imaging pixels

[0625] 3p-G imaging pixels

[0626] 3p-ND imaging pixels

[0627] 3p-OPB imaging pixels

[0628] 3p-R imaging pixels

[0629] 3p-RGB imaging pixels

[0630] 3p-XT imaging pixels

[0631] 3p-Y imaging pixels

[0632] 3p-ZAF imaging pixels

[0633] 3x pseudo pixels

[0634] 4-pixel array

[0635] 4D ranging pixel array

[0636] 4p Imaging Pixel Array

[0637] 5. Circuit Section

[0638] 5i IF

[0639] 5D ranging circuit section

[0640] 5p Imaging Circuit Section

[0641] 50d pixel circuit

[0642] 50p pixel circuit

[0643] 510 Conversion Section

[0644] 511 Counting Circuit

[0645] 51d conversion circuit

[0646] 51p converter circuit

[0647] 521 Correction Circuit

[0648] 52d signal processing circuit

[0649] 52p signal processing circuit

[0650] 55. Memory Section

[0651] 550 memory

[0652] 550a Counter

[0653] 550b Adder

[0654] 6. Thermometer

[0655] 7 Bias Voltage

[0656] 8-pack

[0657] 81 substrate

[0658] 82 Bare Sheet Bonding Material

[0659] 83 Molding Resin

[0660] 84 Sealing Resin

[0661] 85 Glass

[0662] 9. Scanning Agency

[0663] 90 casing

[0664] 91 Laser

[0665] 92 Lenses

[0666] 93 Reflector

[0667] 94 Wavelength-selective reflector

[0668] 95 lens

[0669] A detection area

[0670] Area A1

[0671] Area A2

[0672] Area A3

[0673] A4 area

[0674] A5 area

[0675] A line Line area

[0676] M-frame memory

[0677] OBJ object

[0678] OBJ10 Part 1

[0679] OBJ20 Part 2

[0680] PT1 pattern

[0681] PT2 pattern

[0682] PT3 pattern

[0683] PT4 pattern

[0684] SB solder balls

[0685] SL signal line

[0686] TR transistor

[0687] TR-AMP transistor

[0688] TR-IN transistor

[0689] TR-INV transistor

[0690] TR-RST transistor

[0691] TR-SEL transistor

[0692] TR-TG transistor

[0693] W lead

Claims

1. A light detection device, comprising: A first chip and a second chip, which are stacked together to have an electrical connection with each other; A pixel array is disposed in a first chip and includes a plurality of pixels, each of the plurality of pixels including a photoelectric conversion unit; as well as A circuit section, wherein the circuit section is disposed in the second chip and electrically connected to the pixel array section of the first chip, wherein... The plurality of pixels includes: Imaging pixels are configured to detect visible light; and The ranging pixels are configured to detect ranging light. The pixel array portion includes: An imaging pixel array includes at least a plurality of said imaging pixels arranged along a column direction; and The ranging pixel array includes at least a plurality of ranging pixels arranged along the column direction, and The circuit section includes: The imaging circuit section is electrically connected to the imaging pixel array section; and The ranging circuit section is electrically connected to the ranging pixel array section.

2. The optical detection device according to claim 1, wherein, The ranging circuit includes a pixel circuit that generates an electrical signal in response to the generation of charge in the photoelectric conversion section of the ranging pixel. The pixel circuit of the ranging circuit section overlaps with the ranging pixel array section in the plan view.

3. The optical detection device according to claim 1, wherein, The imaging pixel of the imaging pixel array includes a pixel circuit, which generates an electrical signal in response to the generation of charge in the photoelectric conversion unit. The imaging circuit section includes a conversion circuit that performs AD conversion on the signal from the pixel circuit, and The conversion circuit of the imaging circuit section overlaps with the imaging pixel array section in the plan view.

4. The optical detection device according to claim 1, wherein, The imaging pixel array and the ranging pixel array are arranged at intervals along the row direction.

5. The optical detection device according to claim 4, wherein, The imaging pixel array is arranged at one end of the first chip, and The ranging pixel array is arranged at the other end of the first chip.

6. The optical detection device according to claim 1, wherein, The pixel array portion includes: The plurality of said imaging pixel arrays; and Multiple ranging pixel arrays.

7. The optical detection device according to claim 6, wherein, The imaging pixel array and the ranging pixel array are arranged alternately along the row direction.

8. The optical detection device according to claim 1, wherein, The imaging pixel array and the ranging pixel array are arranged at intervals along the row direction. The optical detection device also includes: A ranging light cutoff filter is configured to cover the imaging pixel array; and A visible light cutoff filter is configured to cover the ranging pixel array.

9. The optical detection device according to claim 8, further comprising a package configured to accommodate the first chip and the second chip, wherein, The ranging light cutoff filter and the visible light cutoff filter are disposed in the package.

10. The optical detection device according to claim 1, wherein, The first chip includes an optical layer configured to cover the photoelectric conversion section of the plurality of pixels, and The optical layer includes a filter that transmits light of a color detected by the imaging pixels in the imaging pixel array of the imaging pixel array and the ranging pixel array.

11. The optical detection device according to claim 1, wherein, The photoelectric conversion unit of the ranging pixel includes at least one of an avalanche photodiode (APD) and a single-photon avalanche diode (SPAD).

12. The optical detection device according to claim 1, wherein... The photoelectric conversion unit of the imaging pixel includes at least one of APD and SPAD, and The imaging pixel includes a quenching resistor element connected to the photoelectric conversion unit to perform a recharging for initializing the voltage caused by the avalanche amplification of electrons by the photoelectric conversion unit.

13. The optical detection device according to claim 1, wherein the imaging circuit unit comprises: The counting circuit is configured to count pulse signals generated in response to the generation of charge in the photoelectric conversion section of the imaging pixel; as well as A correction circuit is configured to correct the counting result of the counting circuit to obtain a signal of a level corresponding to the amount of light incident on the photoelectric conversion unit of the imaging pixel.

14. The optical detection device according to claim 1, wherein... The imaging pixel array has high resolution. The ranging pixel array has low resolution, and The circuitry generates high-resolution point data, wherein imaging data obtained based on signals from the imaging pixels is associated with ranging data obtained based on signals from the ranging pixels.

15. The optical detection device according to claim 14, wherein... The ranging data indicates the distance candidate values ​​for each region within the detection area, and When the ranging data indicates multiple distance candidate values ​​for the same area in the detection area, the circuit unit will associate the ranging data of another area with the imaging data of the area that is similar to the imaging data of the area.

16. The optical detection device according to claim 1, wherein... The photoelectric conversion unit of the imaging pixel includes at least one of APD and SPAD, and The imaging circuitry adds signals from the imaging pixels across multiple frames.

17. The optical detection device according to claim 1, wherein... The imaging pixel array and the ranging pixel array are arranged at intervals along the row direction, and The separation distance between the imaging pixel array and the ranging pixel array has a length corresponding to N pixels, where N is an integer greater than or equal to 1.

18. The light detection device according to claim 17, further comprising a pseudo pixel disposed between the imaging pixel array and the ranging pixel array, wherein... The pseudo-pixel has a structure different from that of the imaging pixel.

19. The light detection device according to claim 18, wherein the pseudo-pixel comprises: Photoelectric conversion unit; as well as A light-shielding layer is configured to cover the entire photoelectric conversion unit.

20. The optical detection device according to claim 18, wherein... The imaging pixel includes a lens that converges incident light onto the photoelectric conversion unit, and The pseudo-pixel does not include a lens that focuses incident light onto the photoelectric conversion unit.

21. The light detection device according to claim 1, wherein the plurality of pixels includes pixels in which the photoelectric conversion unit is partially blocked from light.

22. The optical detection device according to claim 1, wherein... The plurality of ranging pixels includes a pair of light-shielding ranging pixels in which different portions of the photoelectric conversion unit are blocked from light, and The ranging circuit performs image plane phase difference ranging based on the distance between the pair of shaded ranging pixels and the light reception level of each of the pair of shaded ranging pixels.

23. The optical detection device according to claim 22, wherein the ranging circuit unit Short-range ranging is performed using the image plane phase difference ranging method, and Long-distance ranging is performed using the direct time-of-flight (dToF) method.

24. The light detection device according to claim 1, wherein the imaging pixel array comprises a pixel column, the pixel column comprising imaging pixels that detect light of the same color.

25. The light detection device according to claim 24, wherein the imaging pixel array comprises: The red pixel column includes imaging pixels that detect red light; The green pixel column includes imaging pixels that detect green light; as well as The blue pixel column includes imaging pixels that detect blue light, and The red pixel column, the green pixel column, and the blue pixel column are arranged side by side along the row direction.

26. The optical detection device according to claim 1, wherein... The imaging pixel includes a completely light-blocking imaging pixel in which the entire photoelectric conversion unit is blocked from light, and The fully light-blocking imaging pixels are arranged in the outer peripheral portion of the imaging pixel array.

27. The light detection device according to claim 1, wherein the imaging pixel array comprises a pixel column, the pixel column comprising a completely light-blocking imaging pixel in which the entire photoelectric conversion unit is blocked from light.

28. The optical detection device according to claim 1, wherein... The plurality of imaging pixels includes: Imaging pixels used for pixel addition; Normal pixels; as well as The photoelectric conversion unit is partially blocked by light-shielding pixels. For each region in the detection area, the imaging circuit generates an image signal for that region based on a signal that is unsaturated and has the highest sensitivity among multiple signals with different sensitivities. The multiple signals with different sensitivities include: A high-sensitivity signal obtained by adding the signals from the imaging pixels used for pixel addition; As a normal sensitivity signal from the normal pixels; and As a low-sensitivity signal from the light-blocking pixel.

29. The optical detection device according to claim 1, wherein... The circuit section utilizes a memory section that stores signals from pixels in multiple pixel columns to add signals from pixels located in different pixel columns that detect light from the same part of the object, and The memory unit includes a plurality of memories, each memory holding a signal from a corresponding pixel among the plurality of pixels, and any of the memories are configured to forward the signals to each other.

30. The optical detection device according to claim 29, wherein... The pixels in the plurality of pixel columns include two or more pixels of the same color, the two or more pixels of the same color being included in different pixel columns and detecting light of the same color, and Any of the aforementioned memories includes two or more memories corresponding to the two or more pixels of the same color.

31. The optical detection device according to claim 29, wherein... The pixels in the plurality of pixel columns include two or more pixels of different colors, the two or more pixels of different colors being included in different pixel columns and detecting different colors of light, and Any of the aforementioned memories includes two or more memories corresponding to the two or more different color pixels.

32. The optical detection device according to claim 29, wherein... The circuit section includes a conversion circuit that performs AD conversion on signals from pixels in the plurality of pixel columns, and The memory unit stores the signal after the AD conversion.

33. The optical detection device according to claim 32, wherein... The conversion circuit includes multiple conversion units, each of which performs AD conversion on signals from a corresponding pixel in one of the multiple pixel columns, and The conversion circuit is configured to selectively supply signals from the same pixel to any one of at least two of the plurality of conversion units.

34. The optical detection device according to claim 32, wherein... The conversion circuit includes multiple conversion units, each of which performs AD conversion on signals from a corresponding pixel in one of the multiple pixel columns, and The memory unit is configured to selectively supply signals from the same pixel to any one of at least two of the plurality of memories.

35. The optical detection device according to claim 29, wherein the memory unit includes a counter for counting and holding the signal.

36. The optical detection apparatus of claim 29, wherein the memory unit includes an adder that reads a signal held by the memory, adds the signal to another signal, and writes the resulting signal into the memory.

37. The light detection device according to claim 1 further includes a scanning mechanism that performs a line scan on the detection area such that light from the detection area is incident on a plurality of imaging pixels arranged along the column direction.

38. The optical detection device according to claim 37, wherein... The imaging pixels include: Detect the color pixels of the corresponding color light; as well as The entire photoelectric conversion unit is completely shielded from light, forming a fully light-blocking imaging pixel. The scanning mechanism performs a line scan on the detection area such that light from the detection area is incident on a color pixel in one of the forward and backward paths of the scan, and that light from the detection area is incident on a completely opaque imaging pixel in the other path.

39. The light detection apparatus of claim 38, wherein the imaging circuit subtracts from the signal from the completely opaque imaging pixel obtained by scanning through the other path the signal from the color pixel obtained by scanning through the one path.

40. A light detection device, comprising: An imaging chip, equipped with imaging pixels that detect visible light; The ranging chip is equipped with ranging pixels that detect ranging light; as well as An optical system guides visible light from the detection area to the imaging chip and guides ranging light to the ranging chip.

Images