Plasma enhanced processing for semiconductor manufacturing and related processing chambers, methods, and systems

Abstract

The present disclosure relates to plasma enhanced processing for semiconductor manufacturing and related processing chambers, methods, and systems. In one or more embodiments, a method of substrate processing includes igniting a plasma, flowing a deposition precursor to interact with the plasma, and flowing the deposition precursor over a substrate positioned in a processing space to form a layer on the substrate. The method includes maintaining the processing space at a pressure less than 100 mTorr, and heating the substrate to a target temperature of 500 degrees Celsius or less.

Description

Technical Field

[0001] This disclosure relates to plasma enhancement processing for semiconductor manufacturing, as well as related processing chambers, methods, and systems. Background Technology

[0002] Semiconductor substrates are processed for a wide variety of applications, including the fabrication of integrated devices and microdevices. One method of processing a substrate involves depositing a material, such as a semiconductor material or a conductive material, on the upper surface of the substrate. For example, epitaxy is a deposition process that deposits films of various materials on the surface of a substrate in a processing chamber. During processing, various parameters can affect the uniformity of the material deposited on the substrate.

[0003] However, the process may involve inhomogeneities, which can lead to hindered device performance and / or reduced throughput. For example, gas activation may be limited and / or involve non-uniform activation, which can result in limited and / or non-uniform film growth, hydrogen desorption, and / or dopant concentration. Gas activation and / or dopant concentration may be limited for device fabrication (such as complementary field-effect transistor (CFET) devices, for example, at relatively low processing temperatures and / or low pressures. Furthermore, relatively high processing temperatures can lead to unintended dopant diffusion and / or hindered device performance.

[0004] Therefore, there is a need for improved equipment and methods in semiconductor processing. Summary of the Invention

[0005] This disclosure relates to plasma enhancement processing for semiconductor manufacturing, as well as related processing chambers, methods, and systems.

[0006] In one or more embodiments, a method of substrate processing includes igniting a plasma, flowing a deposition precursor to interact with the plasma, and flowing the deposition precursor through a substrate positioned in a processing space to form a layer on the substrate. This method includes maintaining the processing space at a pressure of less than 100 mTorr and heating the substrate to a target temperature of 500 degrees Celsius or lower.

[0007] In one or more embodiments, a method of substrate processing includes igniting a plasma, flowing a deposition precursor to interact with the plasma, and flowing the deposition precursor through a substrate positioned in a processing space to form a layer on the substrate. The flow of the deposition precursor includes a first flow through a cover of the processing chamber and a second flow through the sidewalls of the processing chamber.

[0008] In one or more embodiments, a processing chamber includes a chamber body that at least partially defines a processing space, a first gas inlet formed in a side wall of the chamber body, and a second gas inlet formed in a cover of the chamber body. The processing chamber includes a substrate support disposed within the processing space and one or more induction coils disposed outside the processing space. Attached Figure Description

[0009] To gain a more detailed understanding of the features described above, the present disclosure, which has been briefly summarized above, can be described in more detail with reference to embodiments, some of which are shown in the accompanying drawings. However, it should be noted that the drawings illustrate only exemplary embodiments and should not be considered as limiting its scope, allowing for other equally effective embodiments.

[0010] Figure 1 It is a schematic cross-sectional side view of a processing chamber according to one or more embodiments.

[0011] Figure 2 It is based on one or more implementation methods. Figure 1 A schematic cross-sectional partial top view of the conductive plate shown.

[0012] Figure 3 It is a schematic cross-sectional side view of a processing chamber according to one or more embodiments.

[0013] Figure 4A This is a schematic diagram of a semiconductor layer during passivation operation according to one or more embodiments.

[0014] Figure 4B This is a schematic diagram of a semiconductor layer during plasma-enhanced deposition operation according to one or more embodiments.

[0015] Figure 5 This is a schematic block diagram view of a method for substrate processing in semiconductor manufacturing according to one or more embodiments.

[0016] Figure 6 This is a schematic block diagram view of a method for substrate processing in semiconductor manufacturing according to one or more embodiments.

[0017] For ease of understanding, the same reference numerals are used where possible to designate common elements in the figures. It is considered that elements and features of one embodiment may be advantageously incorporated into other embodiments without further description. Detailed Implementation

[0018] This disclosure relates to plasma enhancement processing for semiconductor manufacturing, as well as related processing chambers, methods, and systems.

[0019] This disclosure considers that terms such as "couples / coupling / couple / coupled" may include, but are not limited to, bonding, embedding, welding, fusion, melting together, interference fit and / or fastening, such as by using bolts, threaded connections, pins and / or screws. This disclosure considers that terms such as "couples / coupling / couple / coupled" may include, but are not limited to, integral formation. This disclosure considers that terms such as "couples / coupling / couple / coupled" may include, but are not limited to, direct coupling and / or indirect coupling, such as indirect coupling through components such as links, blocks and / or frames.

[0020] Figure 1 This is a schematic cross-sectional side view of a processing chamber 100 according to one or more embodiments. The processing chamber 100 is a deposition chamber. In one or more embodiments, the processing chamber 100 is an epitaxial deposition chamber. The processing chamber 100 is used to grow an epitaxial film on a substrate 102, and the processing chamber 100 is used to supply plasma for plasma operations such as plasma-assisted film deposition, ion implantation into the substrate 102, pre-cleaning of the substrate 102, etching of the substrate 102, and / or cleaning of the processing chamber 100. In one or more embodiments, the processing chamber 100 generates a precursor crossflow on the top surface 150 of the substrate 102. The processing chamber 100 in… Figure 1 The data is shown to be under processing conditions.

[0021] The processing chamber 100 includes an upper body 156, a lower body 148 disposed below the upper body 156, and a flow module 112 disposed between the upper body 156 and the lower body 148. The upper body 156, the flow module 112, and the lower body 148 form the chamber body. Disposed within the chamber body are a substrate support 106, an upper plate 108, one or more heat sources 143, and a lower plate 110 (e.g., a lower window, such as a lower dome). The lower plate 110 is formed of an energy-transmitting material such as transparent quartz. At least a portion of the lower plate 110 may be opaque. In one or more embodiments, the upper plate 108 includes at least one opaque surface 171. In one or more embodiments, the plate 108 includes transparent sections 172 (which may include two or more) and opaque sections 173 (which may include two or more). In one or more embodiments, the upper plate 108 is a window, such as an upper window, for example, an upper dome. In such embodiments, plate 108 is formed of an energy-transmitting material such as transparent quartz. One or more heat sources 143 include multiple lower heat sources 143 operable to heat the processing space 136 from one side of substrate 102 (e.g., from below substrate 102). The chamber body and plate 108 at least partially define the processing space 136. In one or more embodiments, the lower heat source 143 includes a lamp (such as a halogen lamp or a UV lamp). This disclosure contemplates that other heat sources may be used for the various heat sources described herein (in addition to or in place of lamps). For example, resistance heaters, microwave-powered heaters, light-emitting diodes (LEDs), lasers (e.g., laser diodes), and / or any other suitable heat sources may be used individually or in combination for the various heat sources described herein.

[0022] A substrate support 106 is disposed in the processing space 136 and between the upper plate 108 and the lower plate 110. The substrate support 106 is positioned above one or more heat sources 143 and supports the substrate 102. The upper plate 108 is disposed between the substrate support 106 and the cover 154 of the processing chamber 100. In one or more embodiments, the substrate support 106 includes a base. This disclosure considers other substrate supports (including, for example, substrate carriers and / or one or more ring segments supporting one or more external regions of the substrate 102). A plurality of lower heat sources 143 are disposed between the lower plate 110 and the base plate 152. The plurality of lower heat sources 143 form part of a lower heat source module 145.

[0023] The substrate support 106 may include one or more heaters 243 disposed within the substrate support 106. The heaters 243 may include resistance heaters. Other types of heaters are also considered. This disclosure considers the use of heat sources 141, 143 in addition to the embedded heaters 243. The heaters 243 are configured to heat the substrate 102 disposed on the substrate support 106.

[0024] The processing space 136 and the purification space 138 are located between the plate 108 and the lower plate 110. The processing space 136 and the purification space 138 are part of the internal space of the processing chamber 100. One or more gaskets 111, 163 are disposed inside the main body of the chamber.

[0025] The substrate support 106 includes a top surface on which the substrate 102 is disposed. The substrate support 106 is coupled to the shaft 118. In one or more embodiments, the substrate support 106 is coupled to the shaft 118 via one or more arms 119 coupled to the shaft 118. The shaft 118 is coupled to a motion assembly 121. The motion assembly 121 includes one or more actuators and / or adjustment devices that provide movement and / or adjustment of the shaft 118 and / or the substrate support 106 within the processing space 136.

[0026] The substrate support 106 may include lifting rod holes 107 disposed therein. Each lifting rod hole 107 is sized to receive a lifting rod 132 for lifting the substrate 102 from the substrate support 106 before or after a deposition process. When the substrate support 106 descends from a processing position to a transport position, the lifting rod 132 may rest on a lifting rod stop 134. The lifting rod stop 134 may include a plurality of arms 139 attached to a shaft 135.

[0027] The flow module 112 includes one or more gas inlets 114 (e.g., multiple gas inlets), one or more purge gas inlets 164 (e.g., multiple purge gas inlets), and one or more exhaust outlets 116. The one or more gas inlets 114 are part of the injection portion 113 of the chamber body, and the one or more exhaust outlets 116 are part of the exhaust portion 115 of the chamber body. The one or more gas inlets 114 and the one or more purge gas inlets 164 are located on the side of the flow module 112 opposite to the one or more exhaust outlets 116. A preheating ring 117 is located below the one or more gas inlets 114 and the one or more exhaust outlets 116. The preheating ring 117 is located above the one or more purge gas inlets 164. The preheating ring 117 may comprise a complete ring or one or more ring segments. One or more gaskets 111, 163 are located on the inner surface of the flow module 112 and protect the flow module 112 from the reactive gases used during deposition and / or cleaning operations. Multiple gas inlets 114 and multiple purified gas inlets 164 are each positioned to allow one or more process gases P1 and one or more purified gases P2 to flow parallel to the top surface 150 of the substrate 102 disposed within the processing space 136. Multiple gas inlets 114 are fluidly connected to one or more process gas sources 151 and one or more clean gas sources 153. Multiple purified gas inlets 164 are fluidly connected to one or more purified gas sources 162. One or more exhaust outlets 116 are fluidly connected to an exhaust pump 157. The one or more process gases P1 supplied using one or more process gas sources 151 may include one or more reactive gases (such as one or more of silicon (Si), phosphorus (P), and / or germanium (Ge)) and / or one or more carrier gases (such as one or more of nitrogen (N2) and / or hydrogen (H2)). One or more purification gases P2 supplied using one or more purification gas sources 162 may include one or more inert gases (such as argon (Ar), helium (He), and / or nitrogen (N2)). One or more cleaning gases supplied using one or more cleaning gas sources 153 may include one or more hydrogen (H) and / or chlorine (Cl). In one or more embodiments, one or more processing gases P1 include silicon phosphide (SiP) and / or phosphine (PH3), and one or more cleaning gases include hydrochloric acid (HCl).

[0028] One or more exhaust outlets 116 are further connected to or include an exhaust system 109. The exhaust system 109 is fluidly connected to one or more exhaust outlets 116 and an exhaust pump 157. The exhaust system 109 may facilitate the controlled deposition of layers on the substrate 102. The exhaust system 109 is disposed on the opposite side of the processing chamber 100 relative to the flow module 112.

[0029] The processing chamber 100 includes one or more gaskets 111, 163 (e.g., lower gasket 111 and upper gasket 163). A flow module 112 (which may be at least a portion of the sidewall of the processing chamber 100) includes one or more gas inlets 114 in fluid communication with the processing space 136. The one or more gas inlets 114 are in fluid communication with one or more flow gaps between the upper gasket 163 and the lower gasket 111.

[0030] During a deposition operation (e.g., an epitaxial growth operation), one or more processing gases P1 flow through one or more gas inlets 114, through one or more gaps, and into the processing space 136 to flow over the substrate 102.

[0031] This disclosure also considers that one or more purge gases P2 may be supplied to and discharged from the purge space 138 during deposition operations (through one or more purge gas inlets 164). The one or more purge gases P2 flow simultaneously with the flow of one or more process gases P1. The one or more process gases P1 are discharged through the gap between the upper liner 163 and the lower liner 111 and through one or more exhaust outlets 116. The one or more purge gases P2 may be discharged through one or more outlet openings and through one or more exhaust outlets 116 identical to those of the one or more process gases P1. This disclosure also considers that one or more purge gases P2 may be discharged separately through one or more second exhaust outlets, separate from the one or more exhaust outlets 116.

[0032] During the cleaning operation, one or more cleaning gases flow through one or more gas inlets 114, through one or more gaps (between the upper liner 163 and the lower liner 111), and into the processing space 136.

[0033] Plate 108 includes a plate opening 174. Processing chamber 100 includes a conduit 175 in fluid communication with plate opening 174, and one or more energy sources 176, 178 operable to supply plasma PS1 in processing space 136. In one or more embodiments, the energy sources 176, 178 include one or more radio frequency (RF) coils 177 disposed at least partially around conduit 175, and one or more RF coils 180 disposed at least partially around one or more sidewalls of processing chamber 100. Gas G1 flows through conduit 175, while electricity (such as RF current) flows through one or more RF coils 177, 180, such that a voltage is applied to gas G1. The voltage ignites gas G1 into plasma PS1. Plasma PS1 then flows into processing space 136. The gas G1 used to generate plasma PS1 may include, but is not limited to, one or more of the following: hydrogen (H2), xenon (Xe2), fluorine (F2), krypton fluoride (KrF), neon (Ne), and / or any mixture thereof (such as xenon and neon). In one or more embodiments, gas G1 includes one or more silicon-containing gases (e.g., silane, dichlorosilane (DCS), trichlorosilane (TCS), disilane (DS), and / or tetrachlorosilane) mixed with a carrier gas (e.g., argon, hydrogen, and / or helium). In one or more embodiments, gas G1 includes one or more dopant gases, such as germane, diborane, and / or phosphorus. Other gases are considered for gas G1. Gas G1 may be supplied from plasma gas source 179. This disclosure considers that the voltage and / or frequency of the RF power applied to one or more RF coils 177, 180 may be varied and / or pulsed. The frequency may involve a single frequency or multiple frequencies. Multiple frequencies may be combined.

[0034] Processing chamber 100 includes a conductive plate 187 disposed between substrate support 106 and plate 108. The conductive plate 187 includes a plurality of flow openings 188 through which plasma PS1 flows into processing space 136. The conductive plate 187 is formed of a conductive material. In one or more embodiments, the conductive material includes silicon carbide (SiC), molybdenum, tungsten, stainless steel, and / or aluminum (such as anodized aluminum). The conductive plate 187 can be used as an ion filter (e.g., an ion blocking plate) such that when plasma PS1 flows through the conductive plate 187, free radicals flow through the flow openings 188 and through the conductive plate 187, while ions are at least partially blocked by the conductive plate 187 and conducted through the conductive plate and grounded via a grounding electrode 189. The grounding electrode 189 extends into the conductive plate 187 on a side aligned with the exhaust portion 115 of processing chamber 100. In one or more embodiments, the conductive plate 187 is part of a spray head supplying one or more gases to processing space 136.

[0035] Plasma PS1 may be supplied to the processing space 136 during the flow of one or more processing gases P1 (e.g., deposition gas and / or cleaning gas) to facilitate disconnection, for example, deposition on substrate 102, cleaning of substrate 102, and / or cleaning of the inner surface of processing chamber 100. Plasma PS1 may be supplied to the processing space 136 before the flow of one or more processing gases P1 (e.g., to pre-clean substrate 102) or after the flow of one or more processing gases P1 (e.g., to etch substrate 102, supply ions to substrate 102, and / or clean processing chamber 100). This disclosure contemplates that one or more processing gases P1 may be supplied via conduit 175 and / or one or more gas inlets 114 may be omitted. This disclosure also contemplates that plasma PS1 may be supplied via one or more gas inlets 114 and / or energy source 176 may be omitted or located adjacent to flow module 112.

[0036] Processing chamber 100 includes one or more sensor devices 195, 196, 197, 198 (e.g., metering sensors and / or temperature sensors) configured to measure multiple parameters (e.g., multiple temperatures) within processing chamber 100 and / or multiple metering parameters of substrate 102. In one or more embodiments, the sensor devices 195, 196, 197, 198 include a central sensor device 196 and one or more external sensor devices 195, 197, 198. Controller 190 (described below) can control one or more sensor devices 195, 196, 197, 198 and can use at least one of the sensor devices 195, 196, 197, 198 to perform multiple methods for analyzing the uniformity of substrate processing. In one or more embodiments, each of the sensor devices 195, 196, 197, and 198 includes a sensor comprising one or more of silicon (Si), carbon (C), gallium (Ga), and / or nitrogen (N). In one or more embodiments, each of the sensor devices 195, 196, 197, and 198 includes a silicon sensor, a silicon carbide (SiC) sensor, and / or a gallium nitride (GaN) sensor. In one or more embodiments, one or more of the sensor devices 195, 196, 197, and 198 is a pyrometer and / or an optical sensor, such as an optical pyrometer. This disclosure contemplates the use of sensor devices other than pyrometers, and / or the ability of one or more of the sensor devices 195, 196, 197, and 198 to measure properties other than temperature (such as metrological properties). For example, one or more of sensor devices 195, 196, 197, and 198 can measure one or more gas parameters and / or one or more plasma parameters (such as ion density, electron temperature, electron density, ion energy and angular distribution, enthalpy, free radical density, and / or absorption). In one or more embodiments, one or more of sensor devices 195, 196, 197, and 198 include a residual gas analyzer, an optical emission spectrometer, an enthalpy probe, a Lambert probe, a Faraday cup, and / or an absorption spectrometer.

[0037] In one or more embodiments, one or more sensor devices 195, 196, 197, 198 include one or more upper sensor devices 196, 197, 198 disposed above the substrate 102 and adjacent to the cover 154, and one or more lower sensor devices 195 disposed below the substrate 102 and adjacent to the bottom plate 152. This disclosure is contemplated that at least one of the lower sensor devices 195 may be vertically aligned below at least one of the upper sensor devices 196, 197 (such as external sensor device 197).

[0038] This disclosure takes into account that all sensor devices can be located above or near the upper plate 108 and / or cover 154. For example, one or more lower sensor devices 195 may be omitted. One or more upper sensor devices 196, 197, 198 can be observed through openings defined by conduit 175 and / or multiple transparent sections 172 of plate 108.

[0039] Individual sensor devices 195, 196, 197, and 198 may be single-wavelength sensor devices or multi-wavelength (such as dual-wavelength) sensor devices. In one or more embodiments, the processing chamber 100 includes any one, any two, or any three of the four illustrated sensor devices 195, 196, 197, and 198. In one or more embodiments, in addition to sensor devices 195, 196, 197, and 198, the processing chamber 100 may include one or more additional sensor devices. In one or more embodiments, the processing chamber 100 may include sensor devices disposed at different locations and / or with different orientations than the illustrated sensor devices 195, 196, 197, and 198.

[0040] As shown, controller 190 communicates with processing chamber 100 and controls the operation of processes and methods, such as those described herein. Controller 190 is configured to receive data or inputs as sensor readings from one or more sensors (such as sensor devices 195, 196, 197, 198). Sensor devices may include, for example, sensor devices monitoring the growth of multiple layers on substrate 102; and / or sensor devices monitoring the temperature of substrate 102, preheating ring 117, substrate support 106, and / or gaskets 111, 163. As an example, one or more sensor devices 195, 196, 197, 198 may measure the temperature of substrate 102 and / or preheating ring 117, and may control the power to one or more heat sources 143 and / or energy sources 176 based on the measured temperature (e.g., using feedback control). As described, one or more sensor devices may include, for example, pyrometers. In one or more embodiments, in addition to or in place of a pyrometer, one or more thermocouples (e.g., proximity thermocouples) may be used, and the power to one or more heat sources 143 and / or energy sources 176 may be controlled based on the measured temperature (e.g., using feedback control).

[0041] Controller 190 includes a central processing unit (CPU) 193 (e.g., a processor), instruction-containing memory 191, and support circuitry 192 for the CPU 193. Controller 190 controls various items directly or via other computers and / or controllers. In one or more embodiments, controller 190 is communicatively coupled to a dedicated controller, and controller 190 functions as a central controller.

[0042] Controller 190 is any form of general-purpose computer processor used in industrial environments to control various substrate processing chambers and devices, and subprocessors thereon or therein. Memory 191 or non-transitory computer-readable media is one or more of readily available memory such as random access memory (RAM), dynamic random access memory (DRAM), static RAM (SRAM), and synchronous dynamic RAM (SDRAM (e.g., DDR1, DDR2, DDR3, DDR3L, LPDDR3, DDR4, LPDDR4, and the like)), read-only memory (ROM), floppy disk, hard disk, flash drive, or any other form of local or remote digital storage. Support circuitry 192 of controller 190 is coupled to CPU 193 to support CPU 193. Support circuitry 192 includes cache, power supply, frequency circuitry, input / output circuitry, and subsystems, and the like. Operating parameters (e.g., power supplied to one or more heat sources 143 and / or energy sources 176, cleaning formula and / or treatment formula) and operations are stored as software routines in memory 191. These software routines are executed or invoked to turn controller 190 into a dedicated controller to control the operation of the various chambers / modules described herein. Controller 190 is configured to perform any of the operations described herein (such as the operations of method 500 and / or method 600). Instructions stored in memory, when executed, cause one or more of the operations described herein (such as the operations of method 500 and / or method 600) to be performed with respect to processing chamber 100. Controller 190 and processing chamber 100 are at least part of a system for processing a substrate.

[0043] The various operations described herein can be performed automatically using the controller 190, or can be performed automatically or manually by certain operations performed by the user.

[0044] The controller 190 is configured to control the power, deposition, cleaning, rotational position, heating, and gas flow through the processing chamber 100 by providing outputs to the sensor devices 195, 196, 197, 198, one or more heat sources 143 and / or energy sources 176, processing gas source 151, purified gas source 162, motion component 121, and / or exhaust pump 157.

[0045] During processing, in one or more embodiments, substrate 102 is heated to a target temperature of 600 degrees Celsius or lower (such as 500 degrees Celsius or lower). In one or more embodiments, the target temperature of substrate 102 is in the range of 200 degrees Celsius to 500 degrees Celsius, such as 380 degrees Celsius to 500 degrees Celsius, for example, 400 degrees Celsius to 500 degrees Celsius. In one or more embodiments, the target temperature of substrate 102 is less than 500 degrees Celsius. In one or more embodiments, the target temperature of substrate 102 is 400 degrees Celsius or lower, such as 200 degrees Celsius or lower (e.g., about 150 degrees Celsius).

[0046] One or more heat sources 143 include multiple heat sources 143a to 143c, which are disposed below the substrate support 106 and below the lower plate 110. Heat sources 143a to 143c may be arranged in multiple layers 181 to 183 (e.g., ...). Figure 1 As shown), or they can be arranged on the same layer. One or more reflectors 184, 185, 186 can be disposed inside individual heat sources 143a to 143c. Heat sources 143a to 143c can be arranged in multiple areas 186 to 188 (as shown). Figure 1 (Three areas are shown in the diagram). This disclosure considers the use of one or more areas. Heat sources 143a to 143c can be oriented horizontally, vertically, and / or at an angle.

[0047] Figure 2 It is based on one or more implementation methods. Figure 1 A schematic cross-sectional partial top view of the conductive plate 187 shown.

[0048] The sleeve 201 is disposed around the grounding electrode 189. The sleeve 201 may be disposed in the upper gasket 163 and the flow module 112. The conductive plate 187 may be an ion barrier plate, such as an ion filter.

[0049] Figure 3 This is a schematic cross-sectional side view of a processing chamber 300 according to one or more embodiments. The processing chamber 300 is similar to... Figure 1 The processing chamber 100 shown includes one or more aspects, features, components, operations, and / or properties thereof. For visual clarity, Figure 3 The cross-sectional shading is not shown.

[0050] The main body of the processing chamber 300 includes one or more sidewalls 301, a base plate 302, and a cover 303. The main body of the chamber at least partially defines an internal space including a processing space 305. A spray head 307 including multiple openings may be disposed in the internal space. The spray head 307 (if used) can divide the processing space 305 into an upper section and a lower section. This disclosure considers that the spray head 307 is optional and can be omitted. One or more first gas inlets 308, 309 (multiple are shown) are at least partially formed in one or more sidewalls 301. For example, a second gas inlet 310 may be a portion of a conduit disposed through the cover 303. One or more induction coils 177, 180 are disposed outside the processing space 305. One or more first coils 177 (e.g., upper coils) are positioned above the cover 303, and one or more second coils 180 (e.g., side coils) are at least partially coiled around the processing space 305.

[0051] A remote plasma source (RPS) 320 is mounted to a cover 303. A first RF source 331 supplies RF power to one or more upper coils 177, a second RF source 332 supplies RF power to one or more side coils 180, and a third RF source 333 supplies RF power to the RPS 320. The RPS 320 includes one or more housings 321 through which plasma ignition gases (such as argon and / or helium) and / or processing gases (such as argon, hydrogen, nitrogen, and / or oxygen) are supplied. In one or more embodiments, the plasma ignition gas is ignited into plasma within the RPS 320, and the processing gas is flowable to interact with the plasma. The plasma can interact with the processing gas to form a plasma gas P3. Therefore, the plasma gas P3 may include effluents of the processing gas, such as radicals (e.g., argon radicals, hydrogen radicals, oxygen radicals, and / or nitrogen radicals) and / or ions (e.g., argon ions, hydrogen ions, oxygen ions, and / or nitrogen ions).

[0052] This disclosure also considers that the plasma gas P3 flowing into the processing space 305 may include the ignited plasma itself. One or more processing gases P1 (which may include deposition precursors and / or cleaning precursors) may flow to interact with the plasma gas P3 in the processing space 305. A fourth RF source 334 is coupled to the processing chamber 300 via one or more sidewalls 301. In one or more embodiments, the fourth RF source 334 is coupled to supply RF power to the substrate support 106. RF sources 331 to 334 may independently supply RF power to coils 177, 180 and / or other components of the processing chamber 300. In one or more embodiments, the second frequency of the second RF source 332 (e.g., 2.0 MHz to 2.2 MHz, such as 2.1 MHz) is greater than the first frequency of the first RF source 331 (e.g., 1.8 MHz to 2.0 MHz, such as 1.9 MHz), the fourth frequency of the fourth RF source 334 (e.g., greater than 5.0 MHz, such as 13.56 MHz) is greater than the second frequency, and the third frequency of the third RF source 333 (e.g., greater than 1.0 GHz, such as 2.45 GHz) is greater than the fourth frequency.

[0053] As described, a first stream F1 flows through a second gas inlet 310, and a second stream F2 flows through one or more first gas inlets 308, 309. As shown, the first stream F1 includes one or more process gases P1, and the second stream F2 includes plasma gas P3. In addition to or instead of the first gas inlets 308, 309, one or more process gases P1 may flow as part of the first stream F1 through the cover 303 (e.g., through the second gas inlet 310). In one or more embodiments, the first stream F1 (e.g., plasma gas P3) includes a first flow rate, and the second stream F2 (e.g., one or more process gases P1) includes a second flow rate greater than the first flow rate. In one or more embodiments, the second flow rate is a ratio of the first flow rate, and this ratio is at least 2.0, such as at least 3.0. In one or more embodiments, the second stream F2 includes a deposition precursor, and a third stream F3 flows through one or more first gas inlets 308, 309 and / or the second gas inlet 310. In one or more embodiments, the third stream F3 (e.g., an etchant precursor) has a third flow rate equal to or less than the first flow rate of the first stream F1. This disclosure considers that the ratio of the second flow rate of the second stream F2 to the first flow rate of the first stream F1 can be in the range of 0.001 to 1,000.0. This disclosure also considers that the ratio of the second flow rate of the second stream F2 to the third flow rate of the third stream F3 can be in the range of 0.001 to 1,000.0.

[0054] Gases P1 and P3 can be discharged through the base plate 302 using valve 318 (such as a throttle valve) and pump 319 (such as a vacuum pump and / or a turbo pump). A baffle plate 330, including multiple openings, is disposed between the substrate support 106 and the base plate 302. Gases P1 and P3 can flow through the openings of the baffle plate 330 before being discharged through valve 318 and pump 319. The processing chamber 300 can be used as an epitaxial deposition chamber, an atomic layer deposition (ALD) chamber, a plasma-enhanced chemical vapor deposition (PECVD) chamber, an etching chamber, a dielectric deposition chamber, or any other chamber, such as any other deposition chamber capable of using plasma.

[0055] Figure 4A This is a schematic diagram of the semiconductor layer 420 during a passivation operation according to one or more embodiments. The exposed surface of the semiconductor layer 420 of the substrate 102 undergoes hydrogen passivation, leaving hydrogen atoms 430 on the surface of the semiconductor layer 420. Although Figure 4A Semiconductor layer 420 is shown as silicon atoms 422 arranged in a crystal array, but other semiconductors may also be used. Hydrogen passivation may not be complete, so some dangling bonds 432 may still remain.

[0056] Figure 4B This is a schematic diagram of a semiconductor layer 420 during a plasma-enhanced deposition operation according to one or more embodiments. Ions 440 generated by the plasma bombard the substrate, breaking the bonds between hydrogen and the underlying semiconductor and thus desorbing hydrogen (shown at A). The bombardment of the substrate by high-energy ions also enhances the surface mobility of adsorbed atoms, allowing epitaxial growth to proceed at low temperatures. Furthermore, neutral radicals 442 generated by the plasma can dissociate semiconductor precursors 444 (shown at B), thereby generating radical precursors 446, albeit at lower temperatures. For example, silane (SiH4) can form SiHx. These semiconductor-containing radical precursors migrate to growth sites on the surface, for example, sites with dangling bonds 432, and semiconductor atoms 424 (e.g., silicon) bond to atoms 422 of the semiconductor material in layer 420, resulting in the growth of the semiconductor layer (shown at C). The reaction of the precursors or radical precursors with the semiconductor can lead to further hydrogen desorption (shown at D). In addition, some ions 440 (e.g., H+) can also desorb hydrogen. + This can penetrate the surface of the semiconductor layer and cause annealing and crystallization (shown at E). Under appropriate processing conditions, this can lead to the growth of a single crystal layer on the substrate 102.

[0057] Figure 5 This is a schematic block diagram view of a method 500 for substrate processing in semiconductor manufacturing according to one or more embodiments.

[0058] Operation 502 of method 500 includes heating the substrate positioned on a substrate support in a processing chamber from one side of the substrate. Heating can be performed using, for example, a laser source, a radiation source (such as a lamp), a resistance heater, and / or other heat sources. This disclosure considers the use of any heat source. Heating can be performed using, for example, infrared radiation, ultraviolet radiation, microwave radiation, or any other energy. Heating includes heating the substrate to a target temperature. In one or more embodiments, the target temperature is less than 500 degrees Celsius. In one or more embodiments, the target temperature is 400 degrees Celsius or lower. Other temperatures, such as those in the range of 150 degrees Celsius to 1,600 degrees Celsius, may be considered.

[0059] Operation 503 includes supplying plasma products into the processing space of the processing chamber. The plasma products may be generated within the processing space (e.g., in situ) and / or outside the processing space (e.g., as part of a remote plasma source (RPS)) and then flow into the processing space. The plasma products may include ignited plasma and / or may include (multiple) plasma effluents (such as ions and / or radicals). As an example, the plasma may be generated and may interact with a processing gas on the substrate and / or the processing substrate. As another example, a first gas (such as argon and / or helium) may be ignited into plasma, and then a second gas (such as oxygen, hydrogen, and / or nitrogen) may interact with the plasma to generate (multiple) plasma effluents. The (multiple) plasma effluents may interact with the processing gas on the substrate and / or the processing substrate.

[0060] Operation 504 includes maintaining the processing space under pressure. In one or more embodiments, the pressure is maintained at less than 60 Torr, such as in the range of 0 Torr to 30 Torr. In one or more embodiments, the pressure is maintained at less than 1 Torr, such as in the range of 5 mTorr to 50 mTorr, for example in the range of 0 Torr to 5 mTorr or 5 mTorr to 20 mTorr. In one or more embodiments, the pressure is maintained at 100 mTorr or less. Other pressures, such as 1 mTorr to 760 Torr (e.g., atmospheric pressure) or higher, are also considered.

[0061] Operation 505 includes flowing one or more process gases through a substrate. In one or more embodiments, plasma products of operation 503 are supplied during the flow of one or more process gases in operation 505, and the plasma products interact with the one or more process gases and / or flow through the substrate. In one or more embodiments, the plasma products of operation 503 are supplied before or after the flow of one or more process gases in operation 505. The process gases may flow laterally across the substrate. The process gases may deposit multiple layers on the substrate, pre-clean the substrate, post-clean the substrate, etch the substrate, and / or clean components of a process chamber.

[0062] Operation 506 includes depositing one or more layers on a substrate. In one or more embodiments, the plasma products of operation 503 are supplied during the deposition of operation 506. In one or more embodiments, the plasma products of operation 503 are supplied before or after the deposition of operation 506. Deposition may involve, for example, forming layers comprising silicon and / or germanium on an exposed silicon surface of the substrate. These layers may include one or more dopants (such as boron). The deposition of operation 506 may be replaced by substrate cleaning, chamber cleaning, and / or substrate etching. Deposition of operation 506 may also be used in addition to substrate cleaning, chamber cleaning, and / or substrate etching.

[0063] Figure 6 This is a schematic block diagram view of a method 600 for substrate processing in semiconductor manufacturing according to one or more embodiments. In one or more embodiments, method 600 includes plasma-enhanced epitaxial deposition to deposit a layer on a substrate.

[0064] Operation 602 includes pre-cleaning the substrate. The semiconductor substrate may initially have an oxide layer, such as a native oxide layer, formed on the substrate surface. The substrate may also have residues from previous manufacturing processes, such as photoresist. The substrate may undergo pre-cleaning to remove oxides and other contaminants. For example, the substrate may undergo a remote plasma-assisted dry etching process, such as dry etching using NF3 and NH3, such as Siconi™ etching. This plasma etching may be followed by an annealing operation, for example at 80 to 150°C. Alternatively or additionally, the substrate may undergo wet etching using dilute HF (e.g., 1:100, 0.5 to 5 minutes).

[0065] Operation 604 includes passivating the substrate.

[0066] Optional operation 612 includes raising the target temperature of the substrate by heating the substrate. In one or more embodiments, the target temperature is raised to a range of 200 degrees Celsius to 600 degrees Celsius. As an example, one or more heating elements 243 in the substrate support 106 (e.g., a base) may be set to a temperature in the range of 350 to 450 degrees Celsius.

[0067] In one or more embodiments, the substrate is maintained at ambient room temperature.

[0068] Optional operation 614 includes allowing a carrier gas to flow into the processing chamber. The carrier gas may include, for example, Ar, H2, N2, He, or mixtures thereof. The flow rate of the carrier gas may be from 0.5 to 1000 sccm, and the pressure in the processing space is maintained from 1 mTorr to 500 mTorr, for example, by a pump controlled by a throttle valve. In one or more embodiments, the carrier gas comprises argon and flows at a flow rate from 50 sccm to 200 sccm.

[0069] Operation 616 includes igniting the plasma. The plasma is ignited and maintained at a power of, for example, 100 to 5,000 watts. For example, the plasma may be maintained throughout operation 618 and / or 620. The plasma may be inductively coupled plasma, capacitively coupled plasma, or a combination of inductive and capacitive coupling. The plasma may be generated by a remote plasma source and has effluents (such as free radicals and / or ions). The plasma may be any type of plasma and / or may be generated in any manner. For example, the plasma may be generated using radio frequency energy, direct current energy, and / or microwave energy. As another example, the plasma may be generated using a constant electric field, an alternating electric field, and / or an electromagnetic field. The plasma may be generated in situ and / or in a remote plasma source (RPS).

[0070] Ignition of the plasma includes directing the plasma to one or more top coils 177 ( Figure 1 and Figure 3 Applying a first power. The first RF power is in the range of 100 W to 5,000 W. In one or more embodiments, the first power is 400 to 2,400 W (e.g., 400 to 1,200 W). Ignition of the plasma includes applying a first power to one or more side coils 180 ( Figure 1 and Figure 3 A second power is applied. The second power is greater than the first power. The second RF power is a ratio of the first RF power, and this ratio is at least 1.75, such as about 2.0 or higher. In one or more embodiments, the second power is approximately twice the power of the top coil, for example, 800 to 4,800 W (e.g., 800 to 2,400 W).

[0071] Operation 618 includes flowing a process gas (such as a deposition precursor, e.g., a semiconductor precursor) into a process chamber. In one or more embodiments, the process gas includes a cleaning precursor. In one or more embodiments, one or more semiconductor precursors (e.g., silicon precursors) may be introduced into the process chamber in operation 618. Examples of precursors include SiH4, Si2H6, SiH2Cl2, Si4H 10The process gas comprises silicon (such as Si2H6), SiHCl3, SiCl4, or a mixture of two or more thereof. The flow rate of the process gas can be from 0.5 sccm to 50 sccm, such as 5 to 10 sccm. In one or more embodiments, the process gas comprises silicon (such as Si2H6) and flows at a total flow rate of 5 sccm to 10 sccm. In one or more embodiments, the process gas comprises a deposition precursor (such as DCS) and an etching precursor (such as HCl).

[0072] Optional operation 620 includes allowing a dopant precursor to flow into the processing chamber. The flow rate of the dopant precursor gas can be from 0.5 sccm to 100 sccm. Examples of dopant precursor gases include phosphine (PH3), arsine (AsH3), nitrogen (N2), ammonia (NH3), germane (GeH4), borane (BH3), diborane (B2H6), and disilane (C2H4). 10 Si2), trisilpentane or trimethylgallium (Ga(CH3)3), triethylgallium (Ga(C2H5)3), aluminum chloride (AlCl3), triethylaluminum (C6H) 15 Al), trimethylaluminum (C6H) 18 Al2), methylsilane (CH3SiH3), indium chloride (InCl3), gallium trichloride (GaCl3), sodium oxalate (Na2C2O4), trimethylindium ((CH3)3In), phosphorus trichloride (PCl3), lithium triethylborohydride LiBH ((C2H5)3), tris(trimethylsilyl)arsine (As(TMS)3), tributylarsine (TBAs), dibutyl sebacate (DBS), dioctylamine (DOA), myristic acid (MA), methyl myristate (MM), tris(di-tert-butylphosphine)galactane ( Ga(PtBu2)3), hexadecylamine (HAD), indium acetate (In(Ac)3), oleic acid (OA), 1-octadecene (ODE), 1-octylamine (OTA), palmitic acid (PA), tris(trimethylsilyl)phosphine (P(TMS)3), trioctylamine (TOA), trioctylphosphine (TOP), trioctylphosphine oxide (TOPO), bis(azido)dimethylaminopropyl gallium (BAZIGA), trimethylgallium (TMGa), trimethylaluminum (TMAl), and triethylantimony (TESb), or combinations of two or more of these.

[0073] This disclosure takes into account that dopants can be omitted and the process can grow single-crystal silicon. Single-crystal SiP, SiGe, SiBGe, SiC, SiGeC, or SiB can be grown using dopants. The process can be applied to other semiconductors, such as InP, InAs, InSb, GaP, GaInP, GaAs, and GaN and / or their doped forms. Method 600 can be used for plasma-enhanced epitaxial deposition to grow single-crystal silicon at a growth rate greater than 10 nm / min (e.g., 20 to 25 nm / min) and with a refractive index of 6 to 7, which indicates a low level of defects.

[0074] This disclosure takes into account that the operations of methods 500 and 600 can be performed sequentially, or at least some of the operations can be performed at least partially simultaneously. For example, operations 502, 504 and operations 618, 620 can be performed simultaneously.

[0075] This disclosure considers that one or more operations of method 500 may be combined with one or more operations of method 600 as part of a combined method. For example, a combined method may include performing operations 602 and 604, followed by operation 502 (which may include operation 612), followed by operations 614 and 503 (which may include operation 616), followed by operations 504 to 506 (which may include operation 618), followed by operation 620.

[0076] Method 500 and / or method 600 may be performed using the processing chamber 100 and / or processing chamber 300 described herein. This disclosure contemplates that method 500 and / or method 600 may include one or more of the following examples 1 to 9:

[0077] Example 1. In one or more embodiments providing a favorable growth rate and refractive index, the substrate is at 400°C, the top coil is powered at 1000 W, the side coil is powered at 2000 W, the chamber has a pressure of 10 mTorr, the flow rate of the Si2H6 precursor from the top is 2 sccm, the flow rate of the Si2H6 precursor from the side is 6 sccm, and an argon carrier is injected.

[0078] Example 2. In one or more embodiments providing a favorable growth rate and refractive index, the substrate is at 400°C, the top coil is powered at 500 W, the side coil is powered at 1000 W, the chamber has a pressure of 10 mTorr, the flow rate of the Si2H6 precursor from the top is 3 sccm, the flow rate of the Si2H6 precursor from the side is 7 sccm, and an argon carrier is injected.

[0079] Example 3. In one or more embodiments that provide a favorable growth rate and refractive index, the substrate is at 400°C, the top coil is powered at 600 W, the side coil is powered at 1200 W, the chamber has a pressure of 10 mTorr, the flow rate of the Si2H6 precursor from the top is 3 sccm, the flow rate of the SiH4 precursor from the side is 7 sccm, and a hydrogen carrier is injected.

[0080] Examples 4 and 5. In one or more embodiments that provide a favorable growth rate and refractive index, the processing conditions are the same as in Example 3, but HCl is added at 1 sccm or 3 sccm. This results in a slightly higher refractive index and a reduced or eliminated loss of growth rate.

[0081] Example 6. In one or more embodiments that provide a favorable growth rate and refractive index, the substrate is at 400°C, the top coil is powered at 600 W, the side coil is powered at 1200 W, the chamber has a pressure of 10 mTorr, the flow rate of the DCS precursor from the top is 3 sccm, the flow rate of the DCS precursor from the side is 7 sccm, and a hydrogen carrier is injected.

[0082] Examples 7, 8, and 9, in one or more embodiments providing favorable growth rates and refractive indices, employ the same processing conditions as in Example 6, with HCl added at 1 sccm, 3 sccm, or 5 sccm, respectively. The higher HCl flow rate resulted in a reduced growth rate (although still above 10 nm / min). However, bright-field scanning tunneling electron microscopy images showed a lower defect density than with no HCl or with 3 sccm of HCl.

[0083] The benefits of this disclosure include reliable gas activation and processing (e.g., at relatively low processing temperatures); adjustable gas activation; an expanded selectivity window; modularity of plasma operation and epitaxial deposition operation in a single chamber; modularity of chamber applications; more uniform gas activation; temperature uniformity (e.g., temperature uniformity in the outer regions of the substrate); reduced gas consumption and waste; increased growth rate (e.g., at low temperatures and / or low pressures); enhanced and more uniform film growth and / or dopant concentration; and reduced microload. As an example, ions and / or free radicals may be used to activate the gases used for processing, in addition to or instead of electromagnetic radiation (e.g., infrared and / or ultraviolet radiation). Further benefits include plasma-enhanced epitaxy with reduced or eliminated substrate defects, and higher growth rates (e.g., ≥100 Å / min) at low substrate temperatures (e.g., ≤500 °C) and / or lower process pressures (e.g., ≤100 mT).

[0084] Benefits also include enhanced device performance; enhanced hydrogen desorption; reduced or eliminated unwanted dopant diffusion; efficient processing; and increased throughput. As an example, gas activation is facilitated for substrate target temperatures below 500°C, such as those in the range of 380°C to 500°C. For instance, gases can be activated for processing operations when the substrate is at approximately 400°C. Semiconductor layers (including doped semiconductor layers) can be epitaxially grown at low substrate temperatures (e.g., ≤400°C) and low pressures (e.g., ≤100 mT process chamber pressure). Furthermore, layers can be grown without sacrificing growth rates, or even at higher growth rates than conventional thermal epitaxy (e.g., ≥100 Å / min). This technology can be applied to epitaxy of materials such as Si, SiP, SiGe, SiBGe, SiC, SiGeC, and / or SiB.

[0085] Upon consideration, one or more aspects disclosed herein may be combined. As an example, processing chamber 100; conductive plate 187; controller 190; conduit 175; energy source 176; one or more coils 177 and 180; and processing chamber 300 may be combined. Figure 4A The process, Figure 4B The process, method 500, and / or method 600 may include one or more aspects, features, components, operations, and / or properties. Furthermore, it is considered that one or more aspects disclosed herein may include some or all of the foregoing benefits.

[0086] While the foregoing relates to embodiments of this disclosure, other and further embodiments of this disclosure may be designed without departing from the basic scope of this disclosure, and the scope of this disclosure is defined by the preceding claims.

Claims

1. A method for processing a substrate, the method comprising: Ignite the plasma; The deposition precursor is flowed to interact with the plasma; The deposition precursor is flowed through a substrate positioned in a processing space to form a layer on the substrate; The processing space is maintained at a pressure of less than 100 mTorr; and The substrate is heated to a target temperature of 500 degrees Celsius or lower.

2. The method of claim 1, wherein the layer comprises a single-crystal material.

3. The method of claim 1, wherein igniting the plasma comprises: applying radio frequency (RF) power to one or more sources disposed outside the processing space.

4. The method of claim 3, wherein the one or more sources include one or more first coils and one or more second coils, a first RF power is applied to the one or more first coils, a second RF power is applied to the one or more second coils, and the second RF power is greater than the first RF power.

5. The method of claim 4, wherein the second RF power is a ratio of the first RF power, and the ratio is at least 1.

75.

6. The method of claim 4, wherein the first RF power is in the range of 100 W to 5,000 W.

7. The method of claim 1, wherein the pressure is in the range of 5 mTorr to 50 mTorr.

8. The method of claim 1, wherein the target temperature is ambient room temperature.

9. The method of claim 1, wherein the pressure is in the range of 5 mTorr to 20 mTorr and the total flow rate of the deposition precursor is in the range of 5 sccm to 10 sccm.

10. The method of claim 1, further comprising: cleaning the exposed surface of the substrate to remove oxides prior to the flow of the deposition precursor.

11. A method for processing a substrate, the method comprising: Ignite the plasma; The deposition precursor is flowed to interact with the plasma; and The deposition precursor is flowed through a substrate positioned in a processing space to form a layer on the substrate, the flow of the deposition precursor comprising: The first stream passes through the cover of the processing chamber, and The second stream passes through the sidewall of the processing chamber.

12. The method of claim 11, wherein the first flow includes a first flow rate, and the second flow includes a second flow rate greater than the first flow rate.

13. The method of claim 12, wherein the second flow rate is a ratio of the first flow rate, and the ratio is at least 2.

0.

14. The method of claim 12, further comprising: flowing an etchant precursor into the processing space, the etchant precursor having a third flow rate equal to or less than the first flow rate.

15. The method of claim 11, further comprising: heating the substrate to a target temperature of 500 degrees Celsius or lower.

16. A processing chamber, the processing chamber comprising: A chamber body that at least partially defines a processing space; A first gas inlet is formed in the side wall of the chamber body; A second gas inlet is formed in the cover of the chamber body; A substrate support member is disposed in the processing space; and One or more induction coils are disposed outside the processing space.

17. The processing chamber of claim 16, wherein the one or more induction coils comprise: One or more upper coils, said one or more upper coils being positioned above the cover; and One or more side coils, said one or more side coils being at least partially wound around said processing space.

18. The processing chamber of claim 17, further comprising a remote plasma source mounted to the cover of the processing chamber.

19. The processing chamber of claim 18, further comprising a controller, the controller including instructions that, when executed, cause: Applying a first RF power to the one or more upper coils; and A second RF power is applied to the one or more side coils, wherein the second RF power is greater than the first RF power.

20. The processing chamber of claim 19, wherein the second RF power is a ratio of the first RF power, and the ratio is at least 1.75.

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