Substrate processing system, method, and related apparatus and chamber for detecting process excursion

Abstract

Embodiments of the present disclosure relate to substrate processing systems, methods, and related apparatus and chambers for detecting processing excursions. In one or more embodiments, a system for processing a substrate includes a chamber body. The system includes one or more heat sources operable to heat a processing volume, a substrate support disposed in the processing volume, and a sensor operable to measure emissivity in the processing volume. The system includes a controller including instructions that, when executed by a processor, cause performance of a plurality of operations. The plurality of operations includes analyzing the measured emissivity over a period of time. The analysis includes generating a signal profile of the measured emissivity over the period of time. The plurality of operations includes detecting an excursion along an excursion segment of the signal profile in the signal profile, and adjusting a processing parameter in response to the detection of the excursion.

Description

Technical Field

[0001] Embodiments of this disclosure relate to a substrate processing system, method, and related equipment and chamber for detecting processing offset. Background Technology

[0002] Semiconductor substrates are processed for a wide range of applications, including the fabrication of integrated devices and microdevices. Precise control of the heat source allows the substrate to be heated within tolerances. The temperature of the substrate can affect the uniformity of the material deposited on it. Processing parameters, such as temperature and / or film growth, may be difficult to measure and / or adjust in real time. Calibration methods may involve opening the processing chamber and machine downtime.

[0003] Therefore, there is a need for improved systems, methods, and equipment. Summary of the Invention

[0004] Embodiments of this disclosure relate to a substrate processing system, method, and related equipment and chamber for detecting processing offset.

[0005] In one or more embodiments, a system for processing a substrate includes a chamber body. The chamber body at least partially defines a processing volume. The system includes one or more heat sources operable to heat the processing volume, a substrate support disposed within the processing volume, and a sensor operable to measure the emissivity within the processing volume. The system includes a controller that includes instructions that, when executed by a processor, cause multiple operations to be performed. The multiple operations include analyzing the measured emissivity over a period of time. The analysis includes generating a signal distribution of the measured emissivity over the period of time. The multiple operations include detecting an offset in the signal distribution along an offset segment of the signal distribution, and adjusting processing parameters in response to the detection of the offset.

[0006] In one or more embodiments, a method for monitoring substrate processing includes directing energy from an energy source toward a surface in a processing chamber and receiving the emitted energy using a sensor. The method includes analyzing the emitted energy over a period of time. The analysis includes measuring the emissivity of the emitted energy during that period to generate a signal distribution. The method includes detecting a shift in the emitted energy during that period and adjusting the processing formulation in response to the shift in emitted energy.

[0007] In one or more embodiments, a non-transitory computer-readable medium includes instructions that, when executed, cause to perform a plurality of operations. The plurality of operations include measuring emissivity over a time period to generate a signal distribution, and detecting an offset in the signal distribution along an offset segment. The plurality of operations include adjusting processing parameters in response to the detection of the offset. Attached Figure Description

[0008] To gain a more detailed understanding of the features described above in this disclosure, a more specific description of the disclosure, which has been briefly summarized above, can be obtained with reference to the embodiments, some of which are illustrated in the accompanying drawings. However, it will be noted that the drawings are merely illustrative and are not intended to limit the scope of the disclosure, and other equivalent embodiments are permissible.

[0009] Figure 1 It is a schematic cross-sectional view of a processing system according to one or more embodiments.

[0010] Figure 2 This is a partial schematic cross-sectional view of an in-situ reflectometry system (ISR) that can be used as at least part of a measurement component according to one or more embodiments.

[0011] Figure 3 This is a schematic flowchart view of a method for monitoring substrate processing according to one or more embodiments.

[0012] Figures 4A to 4D The process flow of a substrate processing operation according to one or more embodiments is illustrated schematically.

[0013] Figures 5A to 5D The process flow of a substrate processing operation according to one or more embodiments is illustrated schematically.

[0014] Figures 6A to 6C The process flow of a substrate processing operation according to one or more embodiments is illustrated schematically.

[0015] Figures 7A to 7C The process flow of a substrate processing operation according to one or more embodiments is illustrated schematically.

[0016] Figure 8 It is a schematic diagram view of a reference distribution according to one or more embodiments.

[0017] Figure 9 It is a schematic diagram view of the signal distribution according to one or more embodiments.

[0018] To facilitate understanding, the same reference numerals have been used where possible to identify common elements in the figures. It is anticipated that elements and features of one embodiment may be advantageously incorporated into other embodiments without further description. Detailed Implementation

[0019] Embodiments of this disclosure relate to substrate processing systems, methods, and related apparatus and chambers for detecting processing offsets. In one or more embodiments, sensors are used to perform measurements and generate a measured signal distribution. The measurements can be sent to a feedback control loop. Offsets can be detected in the signal distribution, and these offsets can be used to adjust the processing formulation. The adjusted processing formulation can be used to optimize the processing in an in-situ and real-time manner. For example, the processing formulation can be adjusted with respect to smaller processing volumes and / or changed processing volumes.

[0020] Figure 1 This is a schematic cross-sectional view of a processing system 100 according to one or more embodiments. The processing system 100 includes a processing chamber 101 and a controller 175. The processing system 100 can be configured to perform an epitaxial deposition process in the processing chamber 101.

[0021] The processing chamber 101 includes a housing structure 102 made of a processing-resistant material, such as aluminum or stainless steel, for example, 316L stainless steel. The housing structure 102 may be at least part of the chamber body. The housing structure 102 encloses various functional elements of the processing chamber 101, such as a quartz chamber 104, which includes an upper quartz window 105 and a lower quartz window 131. The quartz chamber 104 encloses an internal volume 110 (also referred to as the processing volume). One or more gaskets 108, 109 may protect the housing structure 102 from reactive chemicals and / or may insulate the quartz chamber 104 from the housing structure 102. The processing chamber 101 includes a substrate support 120. During processing, such as during deposition, the substrate 50 may be positioned on the substrate support 120.

[0022] The processing chamber 101 may further include an upper heat source 164A and a lower heat source 164B for heating the substrate 50 and / or the internal volume 110. Heat sources 164A and 164B may be radiative heat sources, such as lamps, for example halogen lamps and / or infrared (IR) lamps. In one or more embodiments, heat sources 164A and 164B may be operable to emit IR light and / or ultraviolet light. This disclosure contemplates that other heat sources may be used (in addition to or in place of lamps) for the various heat sources described herein. For example, resistive heaters, light-emitting diodes (LEDs), and / or lasers may be used for the various heat sources described herein.

[0023] A substrate support 120 is coupled to an actuator 119, an outer shaft 121, and an inner shaft 122. The actuator 119 is configured to move the inner shaft 122 perpendicularly relative to the outer shaft 121. The actuator 119 is further configured to rotate the inner shaft 122 while the outer shaft 121 remains stationary. The inner shaft 122 is configured to rotate about a central axis C that extends vertically through the center of the inner shaft 122.

[0024] In one or more embodiments, the substrate support 120 is formed of an opaque material, such as white quartz, gray quartz, quartz with impregnated particles (such as SiC particles or silicon particles), black quartz, silicon carbide (SiC), and / or graphite coated with SiC. The processing chamber 101 may include a preheating ring 114 and a plurality of lifting rods 140 that can be positioned around the substrate support 120. The lifting rods 140 may be formed of quartz (such as clear quartz). The lifting rods 140 may be positioned and configured to lift the substrate 50 over the substrate support 120 to allow the substrate 50 to be transferred into and from the internal volume 110 of the processing chamber 101. Lifting rod pads 123 may be attached to an external shaft 121. More or fewer lifting rod pads may be used (e.g., two lifting rod pads). In one or more embodiments, the lifting rod pads 123 are formed of quartz (such as clear quartz). The lifting rod pads 123 can be positioned 120 degrees apart from each other relative to the central axis C that extends through the center of the outer shaft 121.

[0025] Actuator 119 can lower internal shaft 122, causing lifting rod 140 to contact lifting rod pad 123 and push substrate 50 onto substrate support 120. In one or more embodiments, one or more lifting rod pads 123 may include sensors (e.g., proximity sensors) connected to controller 175 to detect when one or more lifting rods 140 cover one or more lifting rod pads 123. Controller 175 can use feedback from the sensors to stop rotation of substrate support 120 via actuator 119. This allows controller to align a first plurality of lifting rods 140A to cover lifting rod pads 123 for lifting substrate 50.

[0026] In one or more embodiments, the processing chamber 101 may include an encoder 180. In one or more embodiments, the encoder may be attached to the exterior of the internal shaft 122, such as near the bottom of the internal shaft 122. The encoder 180 may be used to control the angular amount (e.g., 60 degrees, 90 degrees, 180 degrees, etc.) of the rotation of the substrate support 120 from its starting position. Determining and controlling this angular rotation of the internal shaft 122 allows the substrate support 120 to rotate from its starting position to any angle, providing the ability for the substrate support 120 and the substrate 50 to rotate to angular positions and / or use angular velocities.

[0027] The processing system 100 also includes a controller 175 for controlling the processes executed through the processing system 100. The controller 175 can be any type of controller used in industrial settings, such as a programmable logic controller (PLC). The controller 175 includes a processor 177, memory 176, and input / output (I / O) circuitry 178. The controller 175 may include one or more of the following components: power supplies, clocks, communication components (e.g., network interface cards), and user interfaces typically found in controllers used in semiconductor devices.

[0028] Memory 176 may include non-transitory memory (e.g., non-transitory computer-readable media). Non-transitory memory may be used to store programs and settings as described below. Memory 176 may include one or more readily available types of memory, such as read-only memory (ROM) (e.g., electrically erasable programmable read-only memory, EEPROM), flash memory (e.g., flash drive), floppy disk, hard disk, random access memory (RAM) (e.g., nonvolatile random access memory, NVRAM, dynamic random access memory, DRAM), static RAM (SRAM), and synchronous dynamic RAM (SDRAM (e.g., DDR1, DDR2, DDR3, DDR3L, LPDDR3, DDR4, LPDDR4, and the like)), or any other form of local or remote digital storage.

[0029] Processor 177 is configured to execute various programs stored in memory 176, such as epitaxial deposition processes and processes for conveying substrates and pedestals in and out of internal volume 110. During the execution of these programs, controller 175 can communicate with I / O elements via I / O circuitry 178. For example, during the execution of these programs and communication via I / O circuitry 178, controller 175 can control outputs, such as the rotational position of substrate support 120 relative to lifting rod pad 123 and the vertical position of substrate support 120, using actuator 119. Memory 176 may further include various operational settings for controlling processing system 100.

[0030] Controller 175 is configured to perform any of the operations described herein. In one or more embodiments, when executed, instructions stored on memory 176 cause one or more of the operations of method 300 (described below) with respect to processing chamber 101. The various operations described herein (such as the operation of method 300) can be performed automatically using controller 175, or can be performed automatically and / or manually using certain operations performed by the user.

[0031] Instructions in memory 176 of controller 175 may include one or more machine learning / artificial intelligence algorithms that can be executed in addition to the operations described herein. As an example, a machine learning / artificial intelligence algorithm executed by controller 175 may generate, prioritize, accept, and / or reject reference and / or signal distributions used in method 300. The machine learning / artificial intelligence algorithm may take into account previous operational runs to monitor and update the reference distribution. In operation 310, the machine learning / artificial intelligence algorithm may select and / or adjust deviations used to detect process offsets. The machine learning / artificial intelligence algorithm may optimize adjusted processing parameters of the adjusted processing recipe. One or more machine learning / artificial intelligence algorithms may use, for example, regression models (such as linear regression models) or clustering techniques to estimate optimized parameters and / or optimized values ​​for the signal and / or reference distributions. The algorithms may be unsupervised or supervised. In one or more embodiments, controller 175 performs the operations described herein automatically without using one or more machine learning / artificial intelligence algorithms. In one or more embodiments, controller 175 compares measurements with data in lookup tables and / or libraries to determine whether an offset is detected in operation 310. The controller 175 can store measurements as data in a lookup table and / or library.

[0032] The processing system 100 includes a measurement component 270, which includes a sensor 276. In one or more embodiments, the processing system 100 includes a second sensor 272 and / or a third sensor 273. In one or more embodiments, sensor 276 includes a reflectometer, second sensor 272 includes a growth rate sensor and / or a temperature sensor, and / or third sensor 273 includes a growth rate sensor and / or a temperature sensor. A controller 175 can control the measurement component 270 and / or sensors 272, 273, and adjust the processing formula for processing using the processing chamber 101. In one or more embodiments, sensors 272, 273 each include a pyrometer, which includes a silicon sensor. In one or more embodiments, sensors 272, 273 each include an optical sensor, such as an optical pyrometer. The measurement component 270 includes an energy source 274 (e.g., a light source) and sensor 276. Sensors 272, 273, energy source 274, and sensor 276 are disposed on a substrate 50. A lower temperature sensor 278 is disposed below the substrate 50. An energy source 274 is positioned to emit energy toward a surface (such as the top surface 150 of the substrate 50), and a sensor 276 is disposed adjacent to the energy source 274 and positioned to receive the emitted energy reflected from the substrate 50.

[0033] Energy source 274 can emit, for example, infrared and / or ultraviolet light. In one or more embodiments, energy source 274 is a laser source with controlled intensity and wavelength range. In one or more embodiments, a broadband light source is used. Energy source 274 can be a diode laser or an optical fiber. When energy source 274 is an optical fiber, the optical fiber is connected to a separate energy source (e.g., a light source) that may be located near processing chamber 101. Energy source 274 can be a laser beam or optical fiber that focuses multiple beams (e.g., a light beam) into beam 282 (e.g., a light beam). In one or more embodiments, energy source 274 can emit radiation over a varying wavelength range. Using a varying wavelength range eliminates noise that may result from using a wider wavelength spectrum and allows for increased emission intensity from a narrower range of energy source 274 to increase the signal strength received by sensor 276. In one or more embodiments, one or more heat sources 164A are used as energy source 274. In one or more embodiments, the energy source 274 may be classified as a radiation source, such as a thermal radiation source or a broadband radiation source. The radiation source may be a laser diode or an optical component. The optical component may include a laser, a lamp, and / or a bulb, and / or multiple lenses, mirrors, or a combination of lenses and mirrors.

[0034] Sensor 276 measures the intensity of energy (e.g., light) at different wavelengths within a second beam 284 (e.g., a second light beam) reflected from substrate 50. Sensor 276 may be configured to measure the intensity of the second beam 284. Sensor 276 may include several optical components disposed therein for separating and measuring the second beam 284. In one or more embodiments, sensor 276 is a scanning band edge detector, and scanning is performed therethrough. An optional filter may be placed between sensor 276 and substrate support 120 and configured to filter out radiation emitted through heat sources 164A, 164B.

[0035] Figure 2 This is a partial schematic cross-sectional view of an in-situ reflectance measurement system (ISR) 285, which can be used as at least a portion of a measurement assembly 270 according to one or more embodiments. This disclosure contemplates that other configurations may be used for the measurement assembly 270, for example, in addition to a reflectometer. The ISR system 285 includes an energy source 274, a collimator 215, a sensor 276, a second sensor 272, a third sensor 273, and a dichroic mirror 205 coupled to or disposed on a chamber cover 271. The ISR system 285 facilitates the measurement of one or more properties of the substrate 50 (and / or a film disposed thereon). Exemplary properties include temperature, film growth rate, film thickness, thin film optical properties, and / or intrafilm concentrations (e.g., Ge concentration and / or dopant concentration, such as phosphorus). The collimator 215 may be spaced from the dichroic mirror 205 at a distance ranging from 200 nm to 800 nm. Other distances are contemplated.

[0036] Energy source 274 is configured to generate energy 241 (e.g., radiation, such as light). For example, energy source 274 may be a flash lamp capable of generating full-spectrum or partial-spectrum light. In one or more embodiments, the spectrum of the generated light has wavelengths between about 200 nm and about 4 micrometers, such as 200 nm to about 800 nm and / or 3 micrometers to 4 micrometers. Full-spectrum light can allow a wide range of light signals to be used for analysis; however, in one or more embodiments, the light source may be limited to light of a specific wavelength or a specific range of light wavelengths to perform the analysis. Energy source 274 may be controlled by controller 175. Energy source 274 is in optical communication with collimator 215 and directs energy 241 to collimator 215 according to instructions from controller 175. Optical communication includes a connection via fiber optic cable, and other modes of light transmission are conceivable. The path of energy from energy source 274 may be referred to as the propagation path. Collimated energy 243 (e.g., radiation, such as light, e.g., a beam of light) leaves collimator 215 and travels through channel 231. In one or more embodiments, channel 231 includes a light guide. Channel 231 can be made of any material capable of transmitting light of a predetermined wavelength, such as sapphire. Channel 231 directs collimating energy 243 to the surface of substrate 50 (or a film thereon) to facilitate the measurement of one or more properties of substrate 50 (or a film thereon).

[0037] Collimated energy 243 is reflected from the target measurement surface (such as substrate 50) and reflected back as reflected energy 227. Reflected energy 227 travels through channel 231 and returns. Reflected energy 227 leaves channel 231 and travels along the path of reflected energy 227 to a dichroic mirror 205 aligned with channel 231. In one or more embodiments, dichroic mirror 205 comprises a transparent material with a dielectric coating. The dielectric coating may include, but is not limited to, magnesium fluoride, tantalum pentoxide, and / or titanium dioxide. ISR 285 may include an additional sensor 277 (which may be referred to as a second sensor). In one or more embodiments, the additional sensor 277 comprises a pyrometer comprising a silicon sensor. In one or more embodiments, the additional sensor 277 comprises an optical sensor, such as an optical pyrometer.

[0038] The dichroic mirror 205 reflects certain wavelengths of energy (e.g., light) to the upper temperature sensor 277, but allows other specifically selected wavelengths to pass through the collimator 215. The wavelength range guided through the collimator 215 to the sensor 276 can be between approximately 100 nm and approximately 1000 nm, such as in the range of 200 nm to 800 nm, such as in the range of 200 nm to 400 nm, and such as in the range of 400 nm to 800 nm. Other wavelengths are conceivable. The dichroic mirror 205 facilitates the use of multiple light-based sensors by guiding light of a first desired range to one sensor (such as sensor 276) while sending the remaining light wavelengths to at least one other sensor (such as additional sensor 277). Therefore, the use of the spectrometer and / or ISR system 285 facilitates a compact measurement system, allowing more sensors to be included in a smaller footprint. The dichroic mirror 205 is arranged or oriented with an incident angle A1 between approximately 30° and approximately 60°, such as in the range of 35° and 55°, wherein the plane is approximately orthogonal to the longitudinal axis of the channel 231. However, other incident angles are conceivable.

[0039] like Figure 2As shown, light reflected from the dichroic mirror 205 is transmitted along energy path 211 (e.g., optical path) to an additional sensor 277. In one or more embodiments, light wavelengths between about 1.0 μm and about 6.0 μm, such as between about 3.0 μm and about 4.0 μm, travel along energy path 211 to the additional sensor 277. As described above, the properties of the dichroic mirror 205 are selected to transmit or reflect light within a specified wavelength range. Energy 247 (e.g., light) passing through the dichroic mirror 205 is allowed to be collimated by collimator 215. Collimated energy 213 is directed to sensor 276. In one or more embodiments, sensor 276 includes a spectrometer, such as a spectrograph configured to measure wavelength-resolution intensity. Sensor 276 may include a grating, an optical lens, a filter 421, and / or a linear array photodiode detector. Filter 421 may be a short-pass filter to limit noise from heat sources (such as heat sources 164A, 164B), or a dielectric filter. The dielectric filter includes any thin-film-based filter capable of reducing or preventing light of a specific wavelength from passing through it. Although filter 421 is described as part of sensor 276, it is contemplated that the filter may be located in other locations. For example, filter 421 may be part of dichroic mirror 205. Filter 421 is configured to allow light of a specified wavelength to pass through it while reducing or preventing the passage of other wavelengths. In one or more embodiments, filter 421 allows light with wavelengths below 550 nm to pass through it (while filtering other wavelengths) to mitigate optical signal noise from heat sources in the processing chamber, thereby improving measurement accuracy. It is contemplated that filter 421 may be placed in any optical path including light reflected from substrate 50 (e.g., reflected energy 227 to sensor 276, reflected energy 247 from dichroic mirror 205, and / or collimating energy 243). In one or more embodiments, filter 421 is an integral part of sensor 276. In one or more embodiments, filter 421 is a separate part of sensor 276. In one or more embodiments, filter 421 is not included in the path. It should be noted that although one or more embodiments described herein may include filter 421 and / or dichroic mirror 205, both filter 421 and mirror 205 are optional and may be excluded from any embodiment or implementation described herein.

[0040] The spectrometer system and / or ISR system 285 may optionally include a second sensor 272 and / or a third sensor 273 positioned externally to the additional sensor 277. The second sensor 272 and / or the third sensor 273 are respectively configured to be aligned (e.g., vertically and / or optically aligned) with the external channel 219. The external channel 219 extends between the bottom and upper surfaces of the chamber cover 271. The external channel 219 may be sealed at its upper and lower ends with a material capable of transmitting energy 229 (e.g., light), such as quartz or sapphire. In one or more embodiments, each external channel 219 includes an optical fiber cable disposed thereon.

[0041] In one or more embodiments, the second sensor 272 and / or the third sensor 273 respectively include an energy source (similar to energy source 274), a collimator (similar to collimator 215), a housing (similar to housing 103), a reflector (similar to dichroic mirror 205), a filter (similar to filter 421), a sensor (similar to sensor 276), and / or an additional sensor (similar to additional sensor 277).

[0042] For each sensor 272, 273, the reflected signal travels back to the dichroic mirror and splits into multiple paths (e.g., propagation sub-paths). A first propagation sub-path directs the reflected light to the corresponding additional sensor 277, while a second propagation sub-path directs the reflected light to collimator 215 and subsequently to sensor 276. The true reflectance of the light intensity collected by sensor 276 can be analyzed, for example, by comparing the true reflectance with a model using a nonlinear fitting equation or other empirically derived equations (Fresnel equations), to determine the emissivity of substrate 50 (e.g., using reflectance). Additional sensor 277 can measure the temperature of substrate 50. Second sensor 272 and / or third sensor 273 are configured to measure the growth rate and / or temperature of the outer region of substrate 50, the outer region of substrate support 120, and / or preheating ring 114.

[0043] In one or more embodiments, a model is derived empirically by obtaining data on the absorption / reflectance of light at predetermined wavelengths for various materials of substrate 50 and / or other treated substrates. Data can be collected under conditions close to a predetermined formulation for treating future substrates (such as a treatment formulation that will use the model). The data is then fitted to equations, such as nonlinear equations. The intensity of light received by sensor 276 (e.g., the true reflectance of light reflected from the measured substrate 50) is analyzed and fitted to empirically derived equations to determine the emissivity of substrate 50. In other words, the amount of light reflected from the top surface 150 of substrate 50 varies depending on the material of the film on substrate 50 and / or the thickness of the film material. The amount of light can be compared with known data to determine the emissivity and / or the shift in emissivity. This data and / or equations can also take into account other optical properties, such as refractive index and / or extinction coefficient, to improve measurement accuracy. Substrate support 120 can rotate substrate 50 such that measurements are performed at multiple azimuth positions on substrate 50 and / or substrate support 120. This disclosure anticipates that multiple emissivity measurements (for the same substrate or across various substrates) can be averaged for an adjusted emissivity (e.g., a correction value) to be applied to emissivity measurements.

[0044] Figure 3 This is a schematic flowchart view of a method 300 for monitoring substrate processing according to one or more embodiments.

[0045] Optional operation 302 includes performing a substrate processing operation. The substrate processing operation may include a deposition process on the substrate and / or an etching process on the substrate. The substrate processing operation may further include heating the substrate, introducing at least one processing gas, introducing a purge gas, and venting the processing gas and the purge gas. A single substrate or multiple substrates may be processed during the substrate processing operation.

[0046] Operation 304 includes directing energy from an energy source toward a surface within the processing chamber. The surface may be, for example, a portion of substrate 50, substrate support 106, or preheating ring 114. In one or more embodiments, the energy includes a collimated beam.

[0047] Operation 306 includes receiving the emitted energy using a sensor. In one or more embodiments, the emitted energy includes a reflected beam of a collimated beam reflected from a surface.

[0048] Operation 308 includes analyzing the emitted energy. The analysis of the emitted energy includes measuring the emissivity of the emitted energy over a time period using a sensor to generate a signal distribution. The measured emissivity can be plotted relative to time to generate the signal distribution. For example, the emissivity can be measured by measuring the reflectivity of a surface. In one or more embodiments, the sensor is a spectrometer. The emissivity can indicate conditions on the substrate. Conditions can include one or more of, for example, the film material concentration, film thickness, film growth rate, etching rate, or the selectivity of film growth or etching.

[0049] Operation 310 includes detecting a shift in the emitted energy over a time period. In one or more embodiments, the shift is detected along a shift segment of the signal distribution of the emitted energy. In one or more embodiments, the detection of the shift includes comparing the signal distribution with a reference distribution to identify the deviation of a shift segment of the signal distribution relative to a corresponding segment of the reference distribution. The comparison may include signal difference, such as by signal subtraction. For example, a reference distribution may be generated using a previous iteration of the substrate processing operation of operation 302. The reference distribution may be stored in memory (such as memory 176 of controller 175), and method 300 may retrieve the reference distribution from memory. One or more signal distributions generated in method 300 may be stored as one or more reference distributions for subsequent iterations of method 300. Fingerprint recognition may be used (e.g., by a user and / or controller 175) to save acceptable signal distributions for later use as reference distributions and to delete rejected signal distributions. Downstream testing (such as metrology data) may be used to accept or reject signal distributions.

[0050] In one or more embodiments, the deviation includes a change in direction or a difference in value exceeding a threshold. As an example, an increase in reflectivity signal can indicate a loss of selectivity during processing. In one or more embodiments, the analysis includes line fitting to the signal distribution and a reference distribution, and comparing the two line fits. The line fit can include a linear fit or a polynomial fit.

[0051] This disclosure contemplates that the signal distributions and / or reference distributions described herein can be represented, generated, and / or analyzed in software without the need for visual display (such as displaying them to a user on a display screen). This disclosure also envisions that the signal distributions and / or reference distributions can be displayed (such as displaying them to a user on a display screen) as appropriate.

[0052] Operation 312 includes adjusting the processing recipe. The adjusted processing recipe may be, for example, the processing recipe used in operation 302 and / or another processing recipe. The processing recipe is adjusted in response to the detection of an offset. In one or more embodiments, the processing recipe is adjusted automatically (e.g., by using controller 175) in response to the detection of an offset in operation 310. Adjustment of the processing recipe may include, for example, adjusting one or more processing parameters of the processing recipe (such as time, temperature, pressure, gas flow rate, gas composition, and / or gas ratio).

[0053] Optional operation 314 includes reanalyzing the emission energy at a processing segment corresponding to an offset segment of the signal distribution after adjusting the processing recipe. The processing segment may be, for example, a segment of substrate processing operation corresponding to the same time period as the offset segment. In one or more embodiments, the emission energy is reanalyzed at operation 314 to generate a second signal distribution using the adjusted processing recipe. Optional operation 314 may include the operation of operation 308 associated with the second signal distribution. If a second offset (similar to the offset in operation 310) is detected in the second signal distribution, the processing recipe can be adjusted again at operation 312, and operation 314 can be repeated to generate a third signal distribution. Operations 312 and 314 can be repeated until no offset is detected in the most recently generated signal distribution, and the processing recipe of the most recently generated signal distribution can be used for subsequent processing. In operation 310, the most recently generated signal distribution can be saved as an acceptance distribution to be used as a reference distribution. This disclosure contemplates that multiple saved reference distributions can be combined (e.g., weighted and / or averaged) to generate a reference distribution for use in operation 310.

[0054] This disclosure envisions that operations 302 to 314 can be performed in various sequences and / or simultaneously. As an example, operations 304, 306, and 308 can be performed simultaneously with operation 302. In one or more embodiments, operations 304, 306, and 308 continue throughout the entire substrate processing operation of operation 302.

[0055] Figures 4A to 4D The process flow of a substrate processing operation according to one or more embodiments is illustrated schematically. For example, Figures 4A to 4D It can be used in operation 302 of method 300. Figures 4A to 4D The substrate processing operation can form source / drain structures on the substrate.

[0056] Figure 4A Elements comprising strip structures are shown, each strip structure including a crystalline silicon layer 401. Figure 4A Dielectric material 402 is deposited at the ends of the crystalline silicon layer 401 and in the trenches between the strip structures. Figure 4AAt the site, a dielectric material 402 is formed using a first processing formulation, the first processing formulation comprising a processing gas comprising hydrochloric acid (HCl) at a flow rate of approximately 50%.

[0057] Figure 4B and Figure 4C The illustration shows the continuous deposition of dielectric material 402 in a trench. The dielectric material 402 fills the trench from the bottom without pinching off the area beneath the dielectric material 402 at the ends of the crystalline silicon layer 401 before filling the trench. For example, the filling occurs before using dielectric material 402 to bond two uppermost segments together. Figure 4B The opening region below the two uppermost sections of the dielectric material 402 in the middle (e.g. Figure 4C (As shown). In Figure 4B and Figure 4C At the point where dielectric material 402 is formed using a second processing formulation, the second processing formulation comprising a processing gas comprising HCl at a flow rate of approximately 100%.

[0058] Figure 4D The illustration shows the continued deposition of dielectric material 402 in the trench to fill it. Figure 4D At this point, dielectric material 402 is formed using a third processing formulation, which includes a processing gas comprising HCl at a flow rate of approximately 75%.

[0059] Figure 3 Method 300 can be about Figures 4A to 4D This can be used to switch between a first processing formulation, a second processing formulation, and a third processing formulation. For example, an offset can be detected in each corresponding processing formulation to indicate that the dielectric material 402 has grown to a threshold thickness, and method 300 can automatically switch to the next processing formulation and monitor the offset of the next processing formulation.

[0060] Figures 5A to 5D The process flow of a substrate processing operation according to one or more embodiments is illustrated schematically. For example, Figures 5A to 5D It can be used in operation 302 of method 300.

[0061] Figure 5A and Figure 5B The illustration shows an element comprising a set of upper dielectric structures 501 and a set of lower dielectric structures 510 formed on a silicon substrate 502. Each lower dielectric structure 510 includes a dielectric spacer 512 disposed between a strip structure including a crystalline silicon layer 511 and the silicon substrate 502. The dielectric spacer 512 is disposed on the side surface of a silicon-germanium (SiGe) layer 513.

[0062] exist Figure 5A and Figure 5BIn this process, dielectric material 520 is deposited on the ends of the crystalline silicon layer 511 and the ends of the dielectric spacer 512. Figure 5A and Figure 5B In this process, dielectric material 520 is formed using a first processing formulation that includes a processing gas comprising hydrochloric acid (HCl) at a flow rate of approximately 50%. Figure 5A In the middle, nodules of dielectric material 520 are formed on the upper dielectric structure 501 and the lower dielectric structure 510. Figure 5B The illustration shows a continuous deposition of dielectric material 520, resulting in larger nodules on the upper dielectric structure 501 and filling the regions between the crystalline silicon layers 511 and outside the dielectric spacers 512 without bonding adjacent segments of the dielectric material 520 together (e.g., to avoid pinch-off). In one or more embodiments, the dielectric material 520 comprises silicon phosphide (SiP). In one or more embodiments, the dielectric material 520 on the upper dielectric structure 501 is amorphous, and the dielectric material 520 on the lower dielectric structure 520 is crystalline. For example, in Figure 5A and Figure 5B In this process, deposition can be relatively non-selective to promote enhanced dopant bonding, higher growth rates, and / or higher silicon concentrations.

[0063] Figure 5C The illustration shows the etching of dielectric material 520 to remove nodules from the upper dielectric structure 501. The dielectric material 520 on the upper dielectric structure 501 is etched relative to the dielectric material 520 on the lower dielectric structure 510, leaving dielectric material 520 remaining on the lower dielectric structure 510. Figure 5C At the location, a second processing formulation is used to etch dielectric material 520, which includes a processing gas including HCl and omits a deposition gas (such as a silane-containing gas).

[0064] Figure 5D The illustration shows the selective deposition of dielectric material 520 on the lower dielectric structure 510. Figure 5D At this location, dielectric material 520 is deposited using a third processing formulation, which includes a processing gas comprising a deposition gas (such as a silane-containing gas) and HCl at a flow rate of approximately 100%. In one or more embodiments, Figure 5D The deposition in it is approximately 100% selective, and Figure 5A and Figure 5B The deposition in the sample is less than 100% selective.

[0065] Figure 3 Method 300 can be about Figures 5A to 5DThe method is used to switch between a first processing formulation, a second processing formulation, and a third processing formulation. An offset can be detected in each corresponding processing formulation to indicate that the dielectric material 520 has grown or decreased to a threshold thickness, and the method 300 can automatically switch to the next processing formulation and monitor the offset of the next processing formulation.

[0066] As an example Figure 5B The detected offset can indicate that the dielectric material 520 on the upper dielectric structure 501 has reached or exceeded a threshold thickness, and in response to the detected offset, the first processing formula is adjusted to a second processing formula relative to the dielectric material 520 on the lower dielectric structure 510 for etching the dielectric material 520 on the upper dielectric structure 501. Subsequently, in Figure 5C In this process, method 300 can be repeated for a second processing formulation to detect a second offset, and the second offset indicates that the dielectric material 520 on the upper dielectric structure 510 has reached or decreased to below a second threshold thickness. The second threshold thickness may be, for example, about 0 mm. In response to detecting the second offset, the second processing formulation can be adjusted to a third processing formulation that selectively deposits the dielectric material 520 on the lower dielectric structure 510.

[0067] The dielectric material 520 can support the crystalline silicon layer 511, and the SiGe layer 513 can subsequently be removed. Method 300 can be used to monitor the emissivity shift on the upper dielectric structure 501 to remove the dielectric material 520 from the upper dielectric structure 501. Method 300 can be used to monitor the emissivity shift indicating that the space between the dielectric spacer 512 and the crystalline silicon layer 511 is filled with the dielectric material 520. Method 300 can be used to monitor the emissivity shift indicating that the dielectric material 520 has been pinched off.

[0068] Figures 6A to 6C The process flow of a substrate processing operation according to one or more embodiments is illustrated schematically. For example, Figures 6A to 6C It can be used in operation 302 of method 300.

[0069] Figure 6A The illustration shows an element including a dielectric structure 601 formed on a silicon substrate 602. Figure 6A In this process, dielectric material 620 is formed in a non-selective manner (e.g., blanket coating) using a first processing formulation.

[0070] Figure 6B The illustration shows the etching of dielectric material 620 to remove dielectric material 620 from dielectric structure 601. Figure 6BAt the site, dielectric material 620 is etched using a second processing formulation, which includes a processing gas comprising HCl and omits a deposition gas (such as a silane-containing gas). In one or more embodiments, dielectric material 620 comprises silicon carbide (SiC). Etching can remove amorphous and polycrystalline SiC segments from the dielectric material, leaving crystalline SiC as a remainder.

[0071] Figure 6A and Figure 6B This process can be repeated once or multiple times until the crystallized SiC reaches or exceeds the target thickness (such as...). Figure 6C (As shown). Crystalline SiC can include dopants (such as phosphorus). Figure 3 Method 300 can be about Figures 6A to 6C The method is used to switch between a first processing formulation, a second processing formulation, and their repeated iterations. An offset can be detected in each corresponding processing formulation to indicate that the dielectric material 620 has grown or decreased to a threshold thickness, and the method 300 can automatically switch to the next processing formulation and monitor the offset of the next processing formulation.

[0072] Figures 7A to 7C The process flow of a substrate processing operation according to one or more embodiments is illustrated schematically. For example, Figures 7A to 7C It can be used in operation 302 of method 300.

[0073] Figure 7A The illustration depicts an element comprising a first layer 701 deposited on a silicon substrate 702 using a first processing formulation, such as in a non-selective (e.g., blanket coating) manner, and a second layer 703 deposited on the first layer 701. The first layer 701 includes a material (such as silicon) and a dopant (such as phosphorus). The second layer 703 includes a material (such as silicon). Figure 7A In this process, deposition can occur at relatively low temperatures, such as below 500 degrees Celsius.

[0074] Figure 7B The illustration shows the etching of the second layer 703 to remove the second layer 703. Figure 6B At the location, a second processing formulation is used to etch dielectric material 620 (e.g., selectively), which includes a processing gas including HCl and omits a deposition gas (such as a silane-containing gas).

[0075] Figure 7A and Figure 7B It can be repeated once or multiple times (such as...) Figure 7C (as shown in the four times), until the component structure is established. Figure 3 Method 300 can be about Figures 7A to 7CThe method is used to switch between a first treatment formulation, a second treatment formulation, and their repeated iterations. An offset can be detected in each corresponding treatment formulation to indicate that the second layer 703 has grown or decreased to a threshold thickness, and method 300 can automatically switch to the next treatment formulation and monitor the offset in the next treatment formulation. For example, an offset can indicate that the material of the second layer 703 has reached or exceeded a certain threshold thickness. Figure 7A The threshold thickness in the middle, and in response to the detection of an offset, the first processing formula is adjusted to the second processing formula of the material for etching the second layer 703 (such as...). Figure 7B (As shown).

[0076] Figure 8 This is a schematic diagram of a reference distribution 801 according to one or more embodiments. Line fitting is performed on the reference distribution 801 to produce a line-fitted reference distribution 802. For example, the reference distribution 801 and / or the line-fitted reference distribution 802 can be used in operation 310 of method 300.

[0077] Figure 9 This is a schematic diagram of a signal distribution 901 according to one or more embodiments. Line fitting is performed on the signal distribution 901 to produce a line-fitted signal distribution 902. For example, signal distribution 901 and / or line-fitted signal distribution 902 can be used in operation 308 of method 300. Figure 9 As shown, the line-fit signal distribution 902 includes an offset segment 904, which includes a deviation (e.g., a change in direction). For example, the offset segment 904 may indicate a loss of selectivity during selective membrane growth.

[0078] The distributions described herein (such as reference distribution 801 and / or signal distribution 901) can be fed into a feedback control loop (such as controller 175) to adjust the processing recipe.

[0079] The benefits of this disclosure include accurate monitoring and adjustment (e.g., optimization) of processing parameters for the processing formulation; adjustment of processing parameters for the processing formulation taking into account the aging and wear of chamber components; and adjustment of processing parameters for the processing formulation in a real-time and in-situ manner. Benefits also include reduced or eliminated chamber opening and machine downtime, enhanced dopant bonding, higher growth rates, and / or higher material (e.g., silicon) concentrations. For example, such benefits can be used to improve selectivity regarding dielectric surfaces and / or high aspect ratio structures.

[0080] It is anticipated that one or more aspects disclosed herein can be combined. As an example, processing system 100, processing chamber 101, controller 175, measurement component 270, ISR 285, and method 300 can be combined. Figures 4A to 4D Substrate processing operations, Figures 5A to 5D Substrate processing operations, Figures 6A to 6CSubstrate processing operations, Figures 7A to 7C Substrate processing operations, Figure 8 Distribution and / or Figure 9 The distribution of one or more aspects, features, components, operations, and / or properties. Furthermore, it is anticipated that one or more aspects disclosed herein may include some or all of the benefits previously mentioned.

[0081] Although the foregoing relates to examples of this disclosure, other and further examples of this disclosure may be devised without departing from its essential scope, which is defined by the following claims.

Claims

1. A system for processing a substrate, the system comprising: A chamber body that at least partially defines a processing volume; One or more heat sources, said one or more heat sources being operable to heat the processing volume; A substrate support member disposed within the processing volume; and A sensor operable to measure the emissivity in the processing volume; A controller, comprising instructions that, when executed by a processor, cause multiple operations to be performed, the multiple operations including: The analysis includes the signal distribution that generates the measured emissivity within the time period; Detect the offset of the offset segment along the signal distribution in the signal distribution; as well as The processing parameters are adjusted in response to the detection of the offset.

2. The system of claim 1, wherein the emissivity indicates one or more of the film's material concentration, film thickness, or selectivity, and the sensor is operable to continue measuring the emissivity during substrate processing operations.

3. The system of claim 1, wherein the processing parameters are automatically adjusted in response to the detection of the offset, and the plurality of operations further include, after adjusting the processing parameters, reanalyzing the measured emissivity at a processing segment corresponding to the offset segment of the signal distribution.

4. A method for monitoring substrate processing, the method comprising: Directing energy from the energy source toward the surface in the processing chamber; Use sensors to receive the emitted energy; The analysis includes the emission energy within the analysis period, wherein the analysis comprises: The emission rate of the emitted energy during the time period is measured to generate a signal distribution; Detect the shift of the emitted energy within the time period; as well as The processing formula is adjusted in response to the offset in the emission energy.

5. The method of claim 4, wherein the offset is detected along an offset segment of the signal distribution.

6. The method of claim 5, further comprising: after adjusting the processing formula, reanalyzing the emission energy at the processing segment corresponding to the offset segment of the signal distribution.

7. The method of claim 5, wherein the measurement of emissivity is performed using a spectrometer.

8. The method of claim 7, wherein the energy comprises a collimated beam, and the emitted energy comprises a reflected beam of the collimated beam reflected from the surface.

9. The method of claim 5, wherein the detection of the offset comprises: comparing the signal distribution with a reference distribution to identify a deviation of the offset segment of the signal distribution relative to a corresponding segment of the reference distribution.

10. The method of claim 9, wherein the deviation includes a change in direction or a value difference exceeding a threshold.

11. The method of claim 9, wherein the analysis comprises: performing line fitting on the signal distribution and the reference distribution.

12. The method of claim 4, further comprising: depositing material on an upper dielectric structure and a lower dielectric structure using the processing formulation, wherein the offset indicates that the material on the upper dielectric structure has reached or exceeded a threshold thickness, and adjusting the processing formulation to a second processing formulation relative to the material on the lower dielectric structure for etching the material on the upper dielectric structure.

13. The method of claim 12, further comprising: Repeat the guidance of the energy and the reception of the transmitted energy; Analyze the emitted energy during the second time period; Detecting a second shift in the emitted energy during the second time period, wherein the second shift indicates that the material on the upper dielectric structure has reached or decreased to below a second threshold thickness; and In response to the detection of the second offset, the second processing formulation is adjusted, wherein the second processing formulation is adjusted to a third processing formulation for selectively depositing the material on the lower dielectric structure.

14. The method of claim 4, further comprising: A first layer is deposited on a substrate using the aforementioned processing formulation, the first layer comprising a material and a dopant; and A second layer is deposited on the first layer, the second layer comprising the material, wherein the offset indicates that the material of the second layer has reached or exceeded a threshold thickness, and in response to the detection of the offset, the processing formulation is adjusted to a second processing formulation for etching the material of the second layer.

15. A non-transitory computer-readable medium comprising instructions that, when executed, cause to perform a plurality of operations, the plurality of operations including: The emission rate is measured over a time period to generate a signal distribution. Detecting the offset of the offset segment along the signal distribution; and The processing parameters are adjusted in response to the detection of the offset.

16. The non-transitory computer-readable medium of claim 15, wherein the processing parameters are automatically adjusted in response to the detection of the offset, and the plurality of operations further include, after adjusting the processing parameters, reanalyzing the measured emissivity at the processing segment corresponding to the offset segment of the signal distribution.

17. The non-transitory computer-readable medium of claim 15, wherein the detection of the offset comprises comparing the signal distribution with a reference distribution to identify a deviation of the offset segment of the signal distribution relative to a corresponding segment of the reference distribution.

18. The non-transitory computer-readable medium of claim 17, wherein the deviation includes a change in orientation or a value difference exceeding a threshold.

19. The non-transitory computer-readable medium of claim 17, wherein the non-transitory computer-readable medium further comprises line fitting the signal distribution and the reference distribution.

20. The non-transitory computer-readable medium of claim 17, wherein the reference distribution is stored in memory.

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