Ozone water preparation and supply device for semiconductor wafer and supply method

Abstract

The application discloses a semiconductor wafer ozone water preparation and supply device and a supply method, relates to the technical fields of ozone water preparation and semiconductor wet cleaning, and comprises an ozone generation unit and an ultrapure water supply unit which form a gas-water premixing flow through a gas-water convergence unit; the premixing flow enters a water film instantaneous generation unit, a pressurized gas dissolving tower and a pressure release soft decompression unit in sequence; a water phase forms a continuous liquid film before pressurization and pre-mass transfer with ozone; the gas-liquid mixture after pre-mass transfer is pressurized and dissolved under the condition of controlled temperature rise; the obtained ozone water releases pressure step by step through multi-stage throttling, buffering and back pressure; and after online detection, the ozone water is switched between constant pressure liquid supply, reflux, liquid discharge and sampling paths. The application is suitable for wafer and other high-cleanliness substrate cleaning, can reduce the risk of decompression gas evolution and concentration fluctuation, and improves the stability of continuous liquid supply.

Description

Technical Field

[0001] This invention relates to the fields of ozone water preparation and semiconductor wet cleaning technology, specifically to an ozone water preparation and supply device and supply method for semiconductor wafers. Background Technology

[0002] Ozone water has strong oxidizing properties and can be used for surface cleaning of semiconductor wafers, chips, and other high-cleanliness substrates. Existing systems typically generate ozone-containing gas using an ozone generator, and then use an aerator, jet mixer, gas-liquid mixing pump, membrane contactor, or pressure dissolution device to introduce ozone into the aqueous phase. Combined with storage, circulation, pressurization, and concentration adjustment mechanisms, the ozone is continuously or intermittently supplied to the user end.

[0003] Chinese patent document CN112203752A discloses a "method and system for generating high-concentration dissolved ozone in a liquid medium". This method involves injecting an acidifying agent into pressurized feed water to maintain its acidic state before feeding it into a dissolving tower. The dissolving tower, housed in a pressure vessel containing the pressurized liquid system and top exhaust gas, is equipped with a feed inlet, an exhaust outlet, and a liquid outlet. The system also includes a fluid recirculation loop connected to the dissolving tower. A portion of the liquid is taken from the dissolving tower, ozone is injected into the recirculation flow, and then the ozone-containing two-phase mixture is re-diffused into the pressurized liquid system via a fluid injection device located within the pressure vessel. A controller regulates the feed flow rate into the dissolving tower and adjusts the outlet flow rate via a valve-controlled nozzle, maintaining continuous operation within the pressure vessel to obtain a high-concentration dissolved ozone liquid.

[0004] However, in high-cleanliness scenarios such as wet cleaning of semiconductor wafers, simply increasing the concentration of gaseous ozone, extending the gas-liquid contact time, or increasing the liquid pressure to achieve a higher dissolved ozone concentration has certain limitations. The migration of ozone from the gas phase to the liquid phase is affected by the gas-liquid interface renewal rate and the mass transfer resistance on the liquid side. While further increasing the pressure may facilitate dissolution, it can also lead to a more pronounced supersaturation tendency in the high-pressure liquid during subsequent transport and pressure reduction at the application end. Simultaneously, the temperature rise generated during pumping, circulation, and compression processes can accelerate ozone decomposition. For wafer cleaning, outlet bubbles, concentration fluctuations, and abnormal water quality such as particles, metal ions, and other anomalies can all affect the stability of the cleaning process.

[0005] Therefore, existing technologies still need to address the technical challenges of balancing ozone dissolution capacity, concentration stability, bubble state, and water quality reliability under conditions of continuous high-cleanliness liquid supply. Summary of the Invention

[0006] (a) Technical problems to be solved To address the shortcomings of existing technologies, this invention provides an ozone water preparation and supply device and method for semiconductor wafers. An ozone generation unit and an ultrapure water supply unit form a gas-water premixed flow via a gas-water merging unit. This premixed flow sequentially enters a water film instantaneous generation unit, a pressurized dissolved gas tower, and a pressure release soft depressurization unit. Before pressurization, the aqueous phase forms a continuous liquid film and undergoes pre-mass transfer with ozone. The gas-liquid mixture after pre-mass transfer is pressurized and dissolved under controlled temperature rise conditions. The resulting ozone water undergoes multi-stage throttling, buffering, and back pressure release, and is switched between constant pressure supply, reflux, drainage, and sampling paths after online monitoring. This reduces the risks of depressurized gas evolution and concentration fluctuations, improves the stability of continuous supply, and solves the technical problems described in the background art.

[0007] (II) Technical Solution To achieve the above objectives, the present invention provides the following technical solution: An ozone water preparation and supply device for semiconductor wafers includes an ozone generation unit, an ultrapure water supply unit, and an air-water mixing unit connecting the two: The output end of the gas-water combination unit is sequentially connected to the instantaneous water film generation unit, the pressurized dissolved air tower, the pressure release soft pressure reduction unit, and the cleaning equipment interface; The instantaneous water film generation unit expands the premixed aqueous phase output from the gas-water merging unit into a continuous liquid film and forms a gas flow channel adjacent to the continuous liquid film. Ozone is pre-pressurized and pre-transferred to the aqueous phase through the liquid film interface along the gas flow channel. The pressurized dissolved gas tower is equipped with heat exchange components that exchange heat with the tower body to pressurize and dissolve the gas-liquid mixture after pre-mass transfer. The pressure relief soft pressure reduction unit includes at least two stages of series throttling structures, a buffer chamber disposed between adjacent throttling structures, and a back pressure valve communicating with the buffer chamber.

[0008] Furthermore, the instantaneous water film generation unit includes a shell, a premixed flow inlet, a film-forming zone, and a gas-liquid mixture outlet; The film-forming zone expands the aqueous phase input from the premixed inlet into multiple liquid films, and a gas flow channel connected to the premixed inlet and the gas-liquid mixture outlet is maintained between adjacent liquid films; The average thickness of the multilayer liquid film is 10-200 micrometers, and is determined based on the geometry of the film-forming channel, the pre-calibrated relationship between the effective film width and the liquid flow rate.

[0009] Furthermore, the pressurized dissolved gas tower includes a tower body, a gas-liquid inlet flow path, a water outlet flow path, an evacuation flow path, a pressure detection component, and a heat exchange component. The gas-liquid inlet flow path receives the gas-liquid mixture that has undergone pre-mass transfer through multiple liquid films. The pressure detection component detects the working pressure of the tower body, and the heat exchange component forms a heat exchange relationship with the tower body. The working pressure is 0.2-0.8 MPa, the gas-liquid ratio is 0.5-3.0, and the liquid phase temperature rise during the pressurized dissolution process is no more than 1℃.

[0010] Furthermore, the at least two-stage series throttling structure includes a first throttling structure and a second throttling structure arranged sequentially along the ozone water flow direction; a buffer chamber is disposed between the first throttling structure and the second throttling structure, and a back pressure valve is connected to the buffer chamber and limits the pressure fluctuation of the buffer chamber; the first throttling structure bears part of the pressure difference, and the ozone water is stabilized by the buffer chamber and the back pressure valve and then depressurized by the second throttling structure, with an average pressure drop rate of no more than 0.05 MPa / s.

[0011] Furthermore, the film-forming zone is composed of at least one of the following structures: microchannel, slit, annular, hydrophilic porous sheet, rotating disk, centrifugal, falling film, and curtain, and includes multiple parallel film-forming channels; each parallel film-forming channel shares the total water flow rate, and the gas-water confluence unit is provided with gas branches corresponding to each parallel film-forming channel, and the gas phase flow rate is synchronously distributed with the liquid phase flow rate.

[0012] Furthermore, multiple pressurized dissolved air towers are configured with identical structures and functions, and these multiple pressurized dissolved air towers are connected in parallel between the instantaneous water film generation unit and the pressure release soft pressure reduction unit; each pressurized dissolved air tower receives a gas-liquid mixture that has undergone pre-mass transfer via a continuous liquid film, and is equipped with heat exchange components and pressure detection components respectively; the outlet water branch of each pressurized dissolved air tower maintains a controlled pressure before merging into the shared pressure release soft pressure reduction unit.

[0013] Furthermore, it also includes an online detection unit and a control unit. The cleaning equipment interface includes a constant pressure liquid supply branch, a return branch, a drain branch, and a sampling branch. The control unit receives the detection results from the online detection unit, uses the allowable range of the detection results as the target process window, and maps the ozone water cleaning status and the status of the detection results entering the target process window to the constant pressure liquid supply branch. The standby status and the status of the detection results not entering the target process window are both mapped to the return branch. The status of the status that does not meet the release conditions is mapped to the drain branch, and the detection and verification status is mapped to the sampling branch.

[0014] Furthermore, the upstream delivery pipeline of the cleaning equipment interface is equipped with an observation section. Abnormal bubble states at the output end within the observation section include visible bubbles, continuous bubble flow, and milky white gas evolution. The cleaning equipment interface is equipped with an ozone water concentration detection interface, an output pressure detection interface, and an output flow detection interface. The ozone water concentration at the cleaning equipment interface is 80-120 mg / L, the output pressure is 0.1-0.4 MPa, and the output flow rate is 0.5-10 L / min. Moreover, the resistivity of the ozone water without added cleaning chemicals after temperature compensation at 25°C is not less than 18 MΩ·cm.

[0015] Furthermore, the control unit includes a processor, a memory, a communication interface, and an input / output interface; the memory stores the control program, the target process window, and anomaly records; the communication interface receives digital communication information, and the input / output interface receives analog signals, switch signals, and pulse detection signals and outputs control signals; when the control command output by the processor is consistent with the corresponding feedback state, the next control action is executed; when they are inconsistent, an anomaly is recorded and at least one of the following is executed: lock-up, bypass, load reduction, and controlled emission; the processor maintains liquid supply when the detection data is valid and the target process window is entered; when communication is interrupted or the validity of the detection data is not confirmed, the processor prohibits increasing the operating power of the ozone generating unit based on the last detection data and switches to the return branch; after communication is restored and valid sampling confirmation is completed, the liquid supply is restored; when the detection data does not meet the release conditions, the processor switches to the drain branch.

[0016] A method for preparing and supplying ozone water for semiconductor wafers, comprising the following steps performed by the aforementioned ozone water preparation and supply apparatus for semiconductor wafers: The ozone gas output from the ozone generating unit and the ultrapure water output from the ultrapure water supply unit are combined in the gas-water mixing unit to form a gas-water premixed flow. Before the gas-water premixed flow enters the pressurized dissolved gas tower, the aqueous phase is expanded into a continuous liquid film, allowing ozone to move along the gas flow channel adjacent to the continuous liquid film and undergo pre-pressurization mass transfer to the aqueous phase through the liquid film interface. The pre-mass-transferred gas-liquid mixture is fed into a pressurized dissolved gas tower equipped with heat exchange components, and pressurized dissolution is carried out under the condition that the liquid phase temperature rise is limited by the heat exchange components; The ozone water obtained by pressurization and dissolution is passed through at least two stages of series throttling structures in sequence, and the pressure is released in stages by using a buffer chamber set between two adjacent stages of series throttling structures and a back pressure valve connected to the buffer chamber. The ozone water, after being released from pressure in stages, is output through the interface of the cleaning equipment.

[0017] (III) Beneficial Effects This invention provides an ozone water preparation and supply device and method for semiconductor wafers, which have the following beneficial effects: By installing a water film instantaneous generation unit before the pressurized dissolved gas tower, a continuous liquid film is formed in the aqueous phase of the gas-water premixed flow. This allows ozone to move along the gas flow path adjacent to the liquid film, shortening the diffusion distance for ozone to enter the bulk liquid phase. This enhances pre-mass transfer before pressurization without simply increasing the gas phase ozone concentration. The pre-mass-transferred gas-liquid mixture is then fed into the pressurized dissolved gas tower equipped with heat exchange components. This increases the effective partial pressure of the gas phase while limiting the temperature rise of the liquid phase, allowing pressure to promote dissolution and inhibit ozone thermal decomposition in combination, thus improving the stability of pressurized dissolution.

[0018] Pressure release and soft decompression are implemented through at least two stages of cascaded throttling structures, buffer chambers, and back pressure valves. This allows for segmented pressure release of the high-pressure ozone solution and limits pressure fluctuations, reducing the instantaneous supersaturation at the outlet and minimizing visible bubbles, continuous bubble flow, and milky gas evolution. The instantaneous pre-mass transfer of the water film, near-isothermal pressurization and dissolution, and pressure release and soft decompression are sequentially linked, ensuring that the gas-liquid state of the previous stage forms the basis for the subsequent treatment stage. This synergistic constraint of ozone migration and retention through mass transfer distance, effective partial pressure, and pressure release enhances concentration stability during continuous liquid supply.

[0019] The online detection unit collects data on ozone water concentration, pressure, temperature, flow rate, resistivity, and water quality. The control unit adjusts ozone generation, gas-liquid ratio, pressurized dissolved gas, throttling, and back pressure according to the target process window, directing any abnormalities to the corresponding path. The constant pressure supply branch, return branch, drainage branch, and sampling branch are linked to the cleaning equipment status, supplying liquid when parameters meet the target process window, returning liquid during standby or when parameters do not meet requirements, and draining liquid when water quality does not meet release conditions, thus preventing abnormal ozone water from entering the cleaning end. Attached Figure Description

[0020] Figure 1 This is a schematic diagram of the overall structure of the ozone water preparation and supply device for semiconductor wafers according to the present invention. Figure 2 This is a schematic diagram of the structure of the instantaneous water film generation unit of the present invention; Figure 3 This is a schematic flowchart of the method for preparing and supplying ozone water for semiconductor wafers according to the present invention. Figure 4 This is a schematic diagram of the flow path structure of the pressurized dissolved gas tower and the pressure relief soft pressure reduction unit of the present invention; Figure 5 This is a schematic diagram of the online detection and closed-loop control logic of the present invention; Figure 6 This is a schematic diagram of the stable liquid supply and observation section of the present invention for a single-wafer cleaning equipment; Figure 7 This is a schematic diagram illustrating parallel implementations of the present invention under different liquid film thicknesses and engineering flow rates; Figure 8 This is a schematic diagram of the hardware topology of the electronic control device of the present invention. Detailed Implementation

[0021] The technical solutions of the embodiments of the present invention will be clearly and completely described below with reference to the accompanying drawings. Obviously, the described embodiments are only some embodiments of the present invention, and not all embodiments. Based on the embodiments of the present invention, all other embodiments obtained by those skilled in the art without creative effort are within the scope of protection of the present invention.

[0022] Please see Figures 1-8 The present invention provides an ozone water preparation and supply device and a supply method for semiconductor wafers.

[0023] Existing ozone water preparation systems for cleaning semiconductor wafers, chips, and other high-purity substrates typically employ an ozone generator to produce ozone-containing gas, which is then dissolved in ultrapure water via an aerator, jet mixer, gas-liquid mixing pump, membrane contactor, or other gas-liquid contact mechanism. Storage, pressurization, circulation, or concentration adjustment mechanisms are added according to the user's needs. For general cleaning operations, this method can generate ozone water of a certain concentration. However, when the target liquid is changed to conditions such as wet wafer cleaning, which have higher requirements for particulate matter, metal contamination, ionic impurities, bubble state, and concentration stability, relying solely on increasing the ozone concentration or extending the gas-liquid contact time is easily affected by factors such as the gas-liquid mass transfer boundary layer, ozone thermal decomposition, depressurization gas evolution, and contamination of the contacting materials. Especially when using relatively low-cost tubular or plate-type ozone generators, if single-stage aeration or single-stage pressure dissolution is continued, it is often necessary to increase the gas phase ozone concentration or increase the system pressure in order to obtain a higher outlet ozone water concentration. However, increasing the pressure will increase the tendency of gas evolution during outlet depressurization. This creates a problem of mutual constraints between water quality indicators such as ozone concentration, bubble control, particulate matter, metal pollution, and ionic impurities, as well as equipment costs.

[0024] The core problem addressed by this implementation method is not simply increasing the instantaneous solubility of ozone in water, but rather, under the condition that the ozone gas concentration output from the ozone generator unit is relatively limited, allowing gaseous ozone to first enter ultrapure water with a shorter liquid phase diffusion distance, and then complete further dissolution under pressure-driven conditions with controlled temperature rise. At the output end, it avoids the re-formation of dissolved ozone into bubbles due to sudden pressure drops. Simultaneously, the action is constrained and controlled by water quality detection and concentration, pressure, and temperature detection, so that the preparation process and the liquid supply process at the chip cleaning end form a continuous closed loop.

[0025] This embodiment establishes a series of technologies based on clean gas source formation, gas-water premixing, instantaneous pre-mass transfer of water film, near-isothermal pressurization and dissolution, pressure release and soft decompression, online detection, and bypass reflux or cleaning supply. The instantaneous water film formation does not replace pressurization and dissolution, but is placed before the pressurization and dissolution tower 206. This allows ultrapure water to first form a continuous thin water film, annular liquid film, sheet-like liquid film, or multi-layered liquid film with an average thickness of 10-200 micrometers, shortening the mass transfer distance of ozone from the gas phase to the bulk liquid phase. The pressurization and dissolution tower 206 then performs near-isothermal pressurization and dissolution on the gas-liquid mixture that has already undergone pre-mass transfer. The pressure release and soft decompression unit 207 further reduces the rate of pressure change through multi-stage throttling, back pressure, and buffering, suppressing the formation of visible bubbles due to localized supersaturation of ozone. The aforementioned instantaneous pre-mass transfer of the water film, near-isothermal pressurization and dissolution, and pressure release and soft decompression are not independent of each other: the instantaneous water film generation unit 205 first shortens the diffusion distance on the liquid side by changing the geometry of the water phase, the pressurization and dissolving tower 206 then increases the effective partial pressure of the gas phase and promotes the continued dissolution of ozone under controlled temperature rise conditions, and the pressure release and soft decompression unit 207 is used to reduce the re-gas evolution caused by the sudden pressure drop, so that the pre-mass transfer before pressurization - near-isothermal pressurization and dissolution - step-by-step pressure release form a continuous mass transfer path with a sequential dependency.

[0026] like Figure 1 As shown, the ozone water preparation and supply device 200 for semiconductor wafers uses a gas pretreatment unit 201 and an ultrapure water supply unit 203 as two clean material inlets. The outlet of the gas pretreatment unit 201 is connected to the ozone generating unit 202. The ozone generating unit 202 and the ultrapure water supply unit 203 respectively supply ozone gas and ultrapure water to the gas-water mixing unit 204. The output end of the gas-water mixing unit 204 is sequentially connected to the instantaneous water film generation unit 205, the pressurized dissolved gas tower 206, and the pressure release soft pressure reduction unit 207, and finally supplies liquid to the cleaning equipment 220 through the cleaning equipment interface 210. The online detection unit 208 detects at least one of the following: gas passage, water passage, pressurized dissolved gas process, and output end. The control unit 209 adjusts the operating power of the ozone generator 202, the gas-liquid ratio, the pressure and operating status of the pressurized dissolved gas tower 206, the throttling and back pressure status of the pressure release soft pressure reduction unit 207, and the liquid supply or return status of the cleaning equipment interface 210 based on the detection results. Ozone-containing exhaust gas can enter the exhaust gas treatment / oxygen enrichment recovery unit 211, where, after ozone decomposition or selective treatment, the oxygen-enriched gas meeting reuse conditions is redirected back to the gas pretreatment unit 201 or the ozone generator 202.

[0027] Figure 1The dashed outline and mark 200 indicate the overall technical boundary of the device, not an independent component. The control unit 209 controls the gas-water mixing unit 204, which can be achieved through gas valve groups, water valve groups, or flow regulating components connected to the gas-water mixing unit 204 to change the gas flow rate, liquid flow rate, or gas-liquid ratio. The online detection unit 208 can be composed of detection components distributed in the gas passage, water passage, pressurized dissolved air tower 206, and output end. The exhaust gas treatment / oxygen enrichment recovery unit 211 is an optional structure.

[0028] To ensure consistent parameter usage across the entire text, the following parameter symbols are adopted: This indicates the concentration of gaseous ozone output by ozone generating unit 202; This indicates the ozone water concentration at interface 210 of the cleaning equipment; This indicates the average thickness of the liquid film formed by the instantaneous water film generation unit 205; This indicates the working pressure of the pressurized dissolved air tower 206; This indicates the temperature rise of the liquid phase during the pressurized dissolution process; Indicates the gas-liquid ratio; Indicates the average rate of pressure decrease; This represents the resistivity of ozone water after temperature compensation at 25℃. This indicates the output pressure at interface 210 of the cleaning equipment; This indicates the output flow rate at interface 210 of the cleaning equipment. Concentration is in mg / L, liquid film thickness is in micrometers, pressure is in MPa, liquid phase temperature rise is in °C, average pressure drop rate is in MPa / s, resistivity is in MΩ·cm, and output flow rate is in L / min; the gas-liquid ratio is a dimensionless parameter.

[0029] The semiconductor-grade high-concentration ozone water in this embodiment refers to ozone water with ultrapure water as the base water source, ozone as the main dissolved oxidizing component, and with constraints on ozone water concentration, outlet bubble state, ionic impurities, particles, total organic carbon and metal ion-related water quality indicators.

[0030] For example, Preferred ;when At that time, it can be made For ozone water that has not yet contained acidic, alkaline, or fluoride-containing cleaning chemicals, the resistivity after temperature compensation at 25°C preferably meets the following requirements. All concentrations are in mg / L, and resistivity is in MΩ·cm.

[0031] Instantaneous water film formation refers to the formation of a continuous liquid film or thin liquid layer of the aqueous phase before the premixed gas-water flow enters the pressurized dissolved air tower 206, through slits, annular gaps, hydrophilic surfaces, microchannels, centrifugal rotation, falling film formation, curtain film formation, or other structures that enable the aqueous phase to expand; its average liquid film thickness satisfy The unit is micrometer. Ozone gas moves along the gas flow channel 2055 formed on one side, both sides, or between adjacent liquid films to shorten the mass transfer distance on the liquid side.

[0032] Pre-mass transfer refers to the process by which ozone gas migrates into the aqueous phase through the thin liquid film interface formed by the instantaneous water film generation unit 205 before the gas-water premixed flow enters the pressurized dissolved gas tower 206. Pre-mass transfer does not require all ozone to dissolve completely in the instantaneous water film generation unit 205. Its function is to establish a larger effective gas-liquid contact interface in advance and reduce the diffusion distance on the liquid side, so that the subsequent pressurized dissolution faces a gas-liquid mixture that has already undergone initial ozone migration.

[0033] Near-isothermal pressurized dissolution refers to the process where a pre-mass-transferred gas-liquid mixture enters the pressurized dissolution tower 206, increasing the effective partial pressure of the gas phase while limiting the temperature rise of the liquid phase caused by compression, pumping, and circulation. The liquid phase temperature rise during the pressurization process... Preferred to satisfy The unit is °C. The term "near isothermal" does not require an absolutely constant temperature, but rather that the dissolution-promoting effect generated by increased pressure, achieved through low-temperature ultrapure water supply, heat exchange, or tower cooling, is not significantly offset by the thermal decomposition of ozone.

[0034] Pressure release and soft pressure reduction refer to the process where, after the high-pressure ozone water leaves the pressurized dissolved air tower 206, it does not directly drop to the output pressure at the cleaning equipment interface 210 through a single large pressure differential throttling point. Instead, it releases pressure in stages through at least two stages of series throttling structures, a back pressure valve 2073, a buffer chamber 2074, or a combination thereof. Preferably, the average pressure drop rate satisfies the following conditions: The unit is MPa / s. This process is used to control the local instantaneous supersaturation level so that the output ozone water does not exhibit visible bubbles, continuous bubble flow, or milky white gas evolution state.

[0035] The average pressure drop rate is according to Confirmed. Among them, This indicates the initial pressure during the decompression process. This indicates the pressure at which the pressure reduction process ends, and the unit is MPa. This indicates the time interval corresponding to the pressure change, in seconds (s). When only the pressure detection component 2065 is set, it can be determined based on the pressure time series at the same detection point. , and .

[0036] The gas-liquid ratio is a dimensionless parameter. Indicate, and in accordance with Confirmed. Among them, This represents the ozone gas volumetric flow rate after conversion to a unified reference state. Both represent the volumetric flow rate of ultrapure water at the same time reference; both use the same volumetric flow rate unit. During pressurized dissolution... Preferred to satisfy .

[0037] Bypass reflux refers to a situation where, when the cleaning equipment 220 is not currently taking liquid, the outlet ozone water concentration has not yet entered the target process window, or the pressure, water quality indicators, and bubble state do not meet the release conditions, the control unit 209 prevents the ozone water after pressure release from directly entering the cleaning equipment 220, and instead returns it to the system circulation path via the reflux branch 2102. The target process window is a preset allowable range composed of the target ozone water concentration, pressure, temperature, flow rate, resistivity, and water quality thresholds related to particles, total organic carbon, and metal ions.

[0038] The online detection unit 208 is a collective term for the detector, detection interface, and corresponding signal processing functions; it does not require all detectors to be centrally located. Particles, total organic carbon, and metal ions can be directly measured by the online detection equipment, or sampled via sampling branch 2104 for detection, and the results are then input to control unit 209. An abnormal bubble state at the output end refers to the appearance of visible bubbles, continuous bubble flow, or milky white gas evolution in the observation section 2105 of the upstream delivery pipeline of the cleaning equipment interface 210, and can be used as an abnormality judgment input for control unit 209. Combined with... Figure 6 The cleaning equipment interface 210 includes a constant pressure liquid supply branch 2101, a return branch 2102, a drain branch 2103, and a sampling branch 2104; the cleaning equipment 220 and the spray end 221 belong to the application environment side object.

[0039] like Figure 1 As shown, this embodiment first establishes an ozone water preparation and supply device 200 for semiconductor wafers. A gas pretreatment unit 201 is arranged before the ozone generating unit 202, and its interior can sequentially form drying, particle interception, and pollutant adsorption paths along the airflow direction. The drying section can use a molecular sieve, the particle control section can use a fluoropolymer filter membrane or a ceramic filter element, and the pollution control section can use a metal oxide adsorbent material or a purification structure combined with the aforementioned components. The gas pretreatment unit 201 receives oxygen-containing gas, processes it, and then transports the gas to the ozone generating unit 202, thereby reducing the chance of moisture, particles, volatile pollutants, and metal pollutants entering the subsequent discharge area and the ozone water preparation flow path. For devices requiring exhaust gas utilization, refer to... Figure 1The exhaust gas treatment / oxygen enrichment recovery unit 211 receives ozone-containing exhaust gas discharged from the system. After decomposing or selectively treating the residual ozone, the oxygen-enriched gas is dried and purified again before being sent back to the gas pretreatment unit 201 or the ozone generation unit 202. When the cleanliness of the recovered gas does not meet the set conditions, the control unit 209 keeps the recovery branch closed, allowing this part of the gas to enter the exhaust gas treatment path instead of the main gas source path.

[0040] like Figure 1 As shown, the ozone generating unit 202 can be a tubular ozone generating unit, a plate ozone generating unit, or a combination of both. The ozone generating unit 202 receives oxygen-containing gas processed by the gas pretreatment unit 201 and generates ozone-containing gas according to the power setting given by the control unit 209. Unlike solutions that simply rely on further increasing the gaseous ozone concentration, this embodiment does not require the ozone generating unit 202 to output ozone gas with a concentration exceeding 150 mg / L. Instead, the ozone generating unit 202, together with the downstream water film instantaneous generation unit 205 and the pressurized dissolved air tower 206, forms a staged mass transfer chain. Therefore, when the generating unit operates at a relatively low gaseous concentration, the problem of limited gas source concentration can be compensated by reducing the downstream liquid phase mass transfer resistance and increasing the effective partial pressure.

[0041] like Figure 1 As shown, the ultrapure water supply unit 203 provides a basic water source to the gas-water mixing unit 204. The ultrapure water supply unit 203 may include an ultrapure water inlet, flow regulation components, pressure regulation components, temperature regulation components, and a resistivity detection interface. The flow channel materials in contact with the ultrapure water and ozone water are preferably perfluoroalkoxy resins, polytetrafluoroethylene, polyvinylidene fluoride, polyetheretherketone, quartz, alumina ceramics, or fluorinated surface-treated metal materials suitable for the corresponding clean environment. The ultrapure water supply unit 203 not only provides the set water flow rate but also ensures that the water temperature and ionic impurity levels before entering the gas-water mixing unit 204 are within the target process window, reducing the impact of abnormal basic water source conditions on the outlet ozone water concentration and water quality indicators from the source.

[0042] Combination Figure 3In the process flow, in step S101, the control unit 209 activates the gas pretreatment unit 201, the ultrapure water supply unit 203, and the online detection unit 208 to initially confirm the state of the gas entering the ozone generation unit 202 and the state of the ultrapure water entering the gas-water mixing unit 204. The online detection unit 208 reads the corresponding detection signals from temperature, pressure, flow rate, and resistivity. For ultrapure water and ozone water flow paths without added cleaning chemicals, if the resistivity or other water quality-related detection results after 25°C temperature compensation do not enter the target process window, the control unit 209 keeps the cleaning equipment interface 210 in a blocked state, allowing the water flow to enter the return branch 2102 or the drain branch 2103.

[0043] Figure 3 The steps S101 to S108 shown in the text correspond one-to-one with the step numbers in the main text. Figure 3 This indicates the main execution sequence within one control cycle. The feedback relationship between the detection result generated in step S107 and the preceding execution stage is determined by... Figure 5 Therefore, this method is a closed-loop control process.

[0044] Combination Figure 3 In step S102, the ozone generating unit 202 receives purified oxygen-containing gas and generates ozone gas, while the ultrapure water supply unit 203 simultaneously outputs controlled ultrapure water. The two form a gas-water premixed flow in the gas-water confluence unit 204. The gas-water confluence unit 204 can employ a confluence structure that avoids forming large-area stagnant dead zones, allowing the ozone gas and ultrapure water to establish a continuous co-flow state before entering the water film instantaneous generation unit 205. In an alternative embodiment, the gas-water confluence location can be near the inlet of the water film instantaneous generation unit 205 to reduce the residence time of the premixed flow in a larger inner diameter pipe; alternatively, multiple gas branches can correspond to multiple parallel film-forming channels, allowing the gas phase flow rate to be synchronously distributed with the liquid phase flow rate. Regardless of the confluence method used, the output directly enters the water film instantaneous generation unit 205 without passing through a long-term storage premixing tank, thereby reducing the chance of ozone decomposition and gas evolution during the premixing stage.

[0045] The control unit 209 can change the gas-liquid ratio through the gas flow regulating component and the water flow regulating component connected to the gas-water junction unit 204; when the gas flow or liquid flow does not enter the target process window, the control unit 209 keeps the cleaning equipment interface 210 closed and keeps the gas-liquid mixture flow circulating or stops it from entering the subsequent liquid supply path.

[0046] like Figure 2As shown, in step S103, the gas-water premixed flow enters the film-forming zone 2053 within the shell 2051 from the premixed flow inlet 2052. The film-forming zone 2053 spreads the aqueous phase into multiple liquid films 2054, with gas channels 2055 remaining between adjacent liquid films 2054. Ozone gas passes along the surface of the liquid films 2054 and the gas channels 2055, completing the instantaneous pre-mass transfer before pressurization, and then exits from the gas-liquid mixture outlet 2056. The average liquid film thickness is controlled between 10-200 micrometers. Because the aqueous phase transforms from a large bulk flow into a thin liquid film, the diffusion distance faced by ozone when migrating from the gas-liquid interface to the interior of the liquid phase is reduced, thus a larger effective interface can be formed without using a large amount of random packing material.

[0047] Figure 2 This is a schematic diagram of the instantaneous water film generation unit 205. The premixed flow enters the film-forming zone 2053 through the premixed flow inlet 2052. After completing gas-liquid contact between the multi-layer liquid film 2054 and the gas flow channel 2055, it converges towards the gas-liquid mixture outlet 2056. The horizontal arrows within the gas flow channel 2055 in the diagram indicate the flow direction of ozone gas relative to the liquid film surface. The actual flow channel is not limited to horizontal extension, nor is the number of liquid film layers limited; it is sufficient that a continuous gas-liquid flow path is formed between the gas flow channel 2055, the premixed flow inlet 2052, and the gas-liquid mixture outlet 2056.

[0048] like Figure 2 As shown, for applications with low ozone gas concentrations but requiring high outlet ozone water concentrations, an extremely thin liquid film of 10-50 micrometers can be used; for continuous liquid supply in single-wafer cleaning equipment at 220°C, a medium liquid film of 50-100 micrometers can be used; for tank-type cleaning lines or larger flow rates, a thicker liquid film of 100-200 micrometers can be used to achieve a balance between the mass transfer interface and the flow pressure drop. The average liquid film thickness can be determined by the pre-calibrated relationship between the geometry of the film-forming channel, the effective film width, and the liquid phase flow rate. During operation control, the corresponding calibration value is used, and it is not required to directly measure the liquid film thickness online.

[0049] like Figure 2 As shown, in an alternative embodiment, the film-forming zone 2053 can adopt a microchannel, slit, annular, hydrophilic porous sheet, rotating disk, centrifugal, falling film, or curtain structure. For a multi-channel parallel film-forming structure, each channel shares the total water flow, allowing each channel to maintain a relatively thin liquid film. For a rotating centrifugal film-forming structure, the aqueous phase expands radially after entering the rotating surface, and the ozone gas contacts the outer surface of the expanded liquid layer. For a falling film or curtain structure, the aqueous phase forms a continuous film layer by gravity and the inlet distribution structure. The common boundary of the above structures is that a continuous liquid film or thin liquid layer is formed before the pressurized dissolved gas tower 206, without changing the order of pre-mass transfer before pressurization and dissolution after pressurization.

[0050] Combination Figure 3 In step S104, the gas-liquid mixture after pre-mass transfer enters the pressurized dissolved gas tower 206 through the gas-liquid mixture outlet 2056. Combined with... Figure 4 The pressurized dissolved air tower 206 comprises a tower body 2061, a gas-liquid inlet flow path 2062, a water outlet flow path 2063, an evacuation flow path 2064, a pressure detection component 2065, and a heat exchange component 2066. The control unit 209, connected to the corresponding valve group, pump, and pressure detection component 2065, switches between gas-liquid inlet, pressure holding, water outlet, and evacuation states. The operating pressure of the pressurized dissolved air tower 206 meets… Preferred to satisfy The unit is MPa; gas-liquid ratio satisfy Preferred to satisfy .

[0051] like Figure 4 As shown, the heat exchange component 2066 forms a heat exchange relationship with the tower body 2061 to remove the heat generated by pressurization, pumping or circulation. Figure 4 The external heat exchange structure shown is a representative form. The heat exchange component 2066 can also be a cooling flow path located outside the tower body 2061, a heat exchange structure connected to the tower body 2061 through a circulation flow path, a temperature regulation structure connected to the ultrapure water supply unit 203, or other structures that can exchange heat with the gas-liquid mixture.

[0052] Control unit 209 compares the temperature detection results before, inside, or after the tower, and makes... Preferred to satisfy The unit is °C. When the working pressure has entered the target process window but the liquid phase temperature rise is close to the upper limit, priority should be given to increasing the heat exchange capacity, reducing the inlet water temperature, or reducing the gas-liquid processing load per unit time.

[0053] Combination Figure 3 In step S105, the control unit 209 determines whether to enter a stable water output state based on the pressure of the pressurized dissolved air tower 206, the running time, the outlet ozone water concentration, and an optional liquid level signal. When the device is equipped with a liquid level detection component, this component can be connected to the control unit 209. Figure 4 Not shown separately; when no liquid level detection component is installed, the level can be determined based on pressure, operating time, and outlet ozone water concentration. When the working pressure has not yet reached the target process window, the outlet water flow path 2063 remains closed or enters internal circulation mode; after the set conditions are met, the outlet water flow path 2063 is gradually opened. For The implementation method is through Liquid film pre-mass transfer and Near-isothermal pressurized dissolution can make Concentration is measured in mg / L, film thickness in micrometers, and pressure in MPa.

[0054] like Figure 4 As shown, in step S106, ozone water from the pressurized dissolved air tower 206 enters the pressure release soft pressure reduction unit 207. The pressure release soft pressure reduction unit 207 includes a first throttling structure 2071, a second throttling structure 2072, a back pressure valve 2073, and a buffer chamber 2074, or a combined structure capable of achieving the same staged pressure release function. The first throttling structure 2071 initially bears part of the pressure difference. After the ozone water enters the buffer chamber 2074, the back pressure valve 2073 limits pressure fluctuations, and then the pressure is further reduced by the second throttling structure 2072. Depending on the scale of the device, the number of throttling stages in series can be increased, or the positions of the back pressure valve 2073 and the buffer chamber 2074 can be adjusted. Preferably, The unit is MPa / s, and the cleaning equipment interface 210 should not have visible bubbles, continuous bubble flow or milky white gas evolution state.

[0055] Figure 4 The first throttling structure 2071, buffer chamber 2074, back pressure valve 2073, and second throttling structure 2072 shown constitute a representative staged pressure relief flow path; the control connection relationship of the valves is as follows: Figure 1 and Figure 5 express, Figure 4 Primarily used to represent physical flow paths. For example... Figure 4 As shown, when the online detection unit 208 detects that the pressure drop rate exceeds the set upper limit, or when visible bubbles, continuous bubble flow, or milky white gas evolution appears at the output, the control unit 209 first reduces the valve opening rate of the pressure release soft pressure reduction unit 207, or increases the set back pressure of the back pressure valve 2073; if the abnormality is still not eliminated, the liquid supply to the cleaning equipment interface 210 is reduced and switched to the return branch 2102. This control method avoids compensating for pressure reduction gas evolution by increasing the ozone generation power, thereby preventing further increase in local supersaturation.

[0056] Combination Figure 5In step S107, the online detection unit 208 receives the ozone water concentration, gas phase ozone concentration, pressure, temperature, flow rate, resistivity, and related detection results for particles, total organic carbon, and metal ions. The control unit 209 distinguishes between insufficient mass transfer capacity, abnormal pressure release, and abnormal water quality indicators according to the source of the abnormality. When the outlet ozone water concentration is lower than the target value but the pressure, temperature, and water quality indicators are all normal, the ozone generation power, gas-liquid ratio, working pressure of the pressurized dissolved air tower 206, inlet water temperature, or bypass reflux ratio can be adjusted sequentially; when the ozone water concentration is normal but abnormal bubbles appear, the pressure release soft pressure reduction unit 207 is adjusted first; when the resistivity, particle, total organic carbon, or metal ion related detection results are abnormal, the cleaning equipment interface 210 is blocked, and the system switches to the reflux branch 2102 or the drain branch 2103.

[0057] Specifically, the control unit 209 can output power adjustment commands to the ozone generating unit 202, flow rate or temperature adjustment commands to the ultrapure water supply unit 203, film formation state related control commands to the water film instantaneous generation unit 205, pressure building, pressure holding, water discharge or venting commands to the pressurized dissolved air tower 206, throttling or back pressure adjustment commands to the pressure release soft pressure reduction unit 207, and liquid supply, reflux, liquid discharge or sampling switching commands to the cleaning equipment interface 210.

[0058] Combination Figure 5 In single-wafer cleaning operations, the ozone water concentration at interface 210 of the cleaning equipment can be set to [value missing]. Units are mg / L; Output pressure satisfy The unit is MPa; output flow rate satisfy The unit is L / min. The cleaning equipment interface 210 receives information about the standby, pre-rinse, ozone water cleaning, ultrapure water rinsing, and drain status of the cleaning equipment 220. In standby mode, the control unit 209 directs ozone water into the reflux branch 2102; when the cleaning equipment 220 enters the ozone water cleaning state and all relevant parameters are within the target process window, the cleaning equipment interface 210 switches to the constant pressure supply branch 2101; after stopping liquid intake, reflux is restored.

[0059] Combination Figure 6In step S108, the cleaning equipment interface 210 switches between the constant pressure supply branch 2101, the return branch 2102, the drain branch 2103, and the sampling branch 2104. The upstream delivery pipeline of the constant pressure supply branch 2101 near the spray end 221 is equipped with an observation section 2105 for observing the bubble state at the output end. When supplying liquid to the single-wafer cleaning equipment 220, high-concentration ozone water is delivered to the spray end 221 via the constant pressure supply branch 2101. When the cleaning equipment 220 is not taking liquid or the output parameters have not yet entered the target process window, the ozone water returns to the system circulation path via the return branch 2102. When it is necessary to discharge ozone water that does not meet the release conditions, the drain branch 2103 is opened. When online instrument calibration, offline testing, or bypass testing is required, the sample is led to the sampling position via the sampling branch 2104. After each liquid supply is completed, the online detection unit 208 continues to collect the output status and send it back to the control unit 209, so that the ozone generation, water film instantaneous generation, pressurized dissolved gas and pressure release soft decompression status can be corrected in the next control cycle.

[0060] Combination Figure 2 and Figure 7 In the first parallel embodiment, the instantaneous water film generation unit 205 adopts an extremely thin liquid film route, wherein Preferred to satisfy The unit is micrometer. The total water flow can be divided into multiple local water flows using hydrophilic microstructured surfaces, multi-channel parallel slits, or microchannels. Ozone gas passes through gas channels 2055 on both sides of the multi-layer liquid film 2054 or between adjacent liquid films and then enters the pressurized dissolved gas tower 206. This route is suitable for scenarios where the gas phase ozone concentration is relatively low but a high ozone water concentration is required. The pressurized dissolved gas tower 206 can meet the requirements. The unit is MPa; the gas-liquid ratio satisfies and make The unit is ℃.

[0061] Figure 7 The three columns in the diagram represent interchangeable operating routes and do not imply that device 200 must simultaneously have three parallel processing chains. The actual device can select the appropriate liquid film thickness range based on the target ozone water concentration, supply flow rate, and allowable pressure drop; the ultra-thin liquid film route itself does not require a low flow rate supply. (Combined with...) Figure 2 and Figure 6 In the second parallel embodiment, the instantaneous water film generation unit 205 adopts a medium liquid film route, wherein The unit is micrometer, and it matches the intermittent liquid intake state of the monolithic wafer cleaning equipment 220. The instantaneous water film generation unit 205 can adopt a multilayer liquid film or annular gap film formation method. When the cleaning equipment 220 is in the liquid intake state, it forms a film according to the target flow rate. After the cleaning equipment 220 enters the standby state, it reduces the output of fresh ozone water and increases the bypass reflux ratio. The control unit 209 switches between the constant pressure liquid supply branch 2101 and the reflux branch 2102 to keep the main preparation link in a recoverable stable state.

[0062] Combination Figure 2 and Figure 7 In the third parallel embodiment, the instantaneous water film generation unit 205 adopts a thicker liquid film or a thinner liquid layer route, wherein... The unit is micrometer, used in tank cleaning lines, photovoltaic silicon wafer cleaning lines, or other scenarios with large-flow continuous liquid supply. The film-forming zone 2053 can adopt annular gap, falling film, or curtain structure to reduce the local pressure drop generated when a large flow rate passes through the film-forming structure. The working pressure of the pressurized dissolved gas tower 206 meets... The unit is MPa; the outlet ozone water concentration meets the requirements. The unit is mg / L. The control unit 209 adjusts the gas-liquid ratio, bypass recirculation ratio, and pressure release rate based on the outlet ozone water concentration, pressure changes, and bubble state.

[0063] Combination Figure 4 In another parallel implementation, the pressurized dissolution process can be carried out continuously using a single pressurized dissolved gas tower 206, or multiple pressurized dissolved gas towers with identical structures and functions can be connected in parallel according to the liquid supply scale. Each pressurized dissolved gas tower is located after the instantaneous water film generation unit 205 and receives the gas-liquid mixture that has completed pre-mass transfer; each branch maintains a controlled pressure before entering the pressure release soft depressurization unit 207. Regardless of whether a single tower or multiple towers are used in parallel, the order in which water film pre-mass transfer occurs before pressurized dissolution is maintained.

[0064] Combination Figure 5 When signal communication between the gas pretreatment unit 201, ozone generation unit 202, online detection unit 208, or control unit 209 is interrupted, control unit 209 will not continue to increase ozone generation power based on the last normal detection value. For control cycles where the validity of detection data cannot be confirmed, cleaning equipment interface 210 will stop releasing newly prepared ozone water to cleaning equipment 220, and the system will maintain reflux or controlled drainage; after communication is restored, online detection unit 208 will regain valid ozone water concentration, pressure, and temperature data, and resume liquid supply after the corresponding data re-enters the target process window.

[0065] After communication is restored, the control unit 209 first keeps the cleaning equipment interface 210 in the reflux state, completes at least one effective sampling and confirms that the detection value is consistent with the corresponding execution state, and then restores the constant pressure liquid supply.

[0066] Combination Figure 4 and Figure 5 When the pressure detection component 2065 provides no feedback or the detected value continuously exceeds the allowable pressure window of the pressurized dissolved air tower 206, the control unit 209 limits further pressurization and blocks the cleaning equipment interface 210. If the system can still obtain independent flow and temperature information, it can maintain a low-load cycle to wait for the detection to recover; if the pressure status cannot be confirmed, the pressurization supply to the pressurized dissolved air tower 206 is shut off and controlled depressurization is performed through the venting flow path 2064. Upon restarting, the pressure detection is first confirmed to have recovered, then the gas-liquid flow rate is established, and then steps S104 to S107 are re-executed, instead of directly switching from the original abnormal pressure state to normal liquid supply.

[0067] Combination Figure 4 When the valve of the pressure relief soft pressure reducing unit 207 fails to change its opening degree according to the control command, or when the output pressure at the cleaning equipment interface 210 fails to change as expected within the set time, the control unit 209 keeps the cleaning equipment interface 210 closed and reduces the outlet flow of the pressurized dissolved air tower 206 or switches to the return branch 2102. For upstream pressure increases caused by abnormal closure of the back pressure valve 2073, the addition of gas-liquid mixture to the pressurized dissolved air tower 206 is stopped first; for excessively rapid pressure drops due to abnormal throttling structure, the throughput per unit time is reduced through upstream flow reduction and bypass return. After the abnormality is resolved, pressure is gradually built up at a lower flow rate before normal liquid supply is restored to avoid another instantaneous pressure reduction.

[0068] Combination Figure 2 When the instantaneous water film generation unit 205 experiences abnormal flow distribution, blockage of some film-forming channels, or inability to maintain the liquid film state, the direct manifestations may be a decrease in the outlet ozone concentration under the same ozone generation conditions, abnormal pressure difference before and after the film-forming unit, or changes in the subsequent gas-liquid state. After eliminating the pressure abnormalities in the ozone generation unit 202 and the pressurized dissolved air tower 206, the control unit 209 can reduce the liquid phase flow rate through the instantaneous water film generation unit 205, activate the remaining parallel film-forming channels, or suspend the liquid supply to the cleaning equipment. After recovery, a stable liquid film is first re-formed in a circulating state before the cleaning equipment interface 210 is reopened.

[0069] When the device has only a single film-forming channel and no switchable parallel channels, the control unit 209 can reduce the liquid flow rate, stop supplying liquid to the cleaning equipment, and enter a drain or shutdown inspection state. Combined with... Figure 5When the online detection unit 208 detects that the outlet resistivity, particulate matter, total organic carbon, or metal ion-related detection results deviate from the target process window, the control unit 209 classifies the anomaly as a water quality indicator anomaly and does not compensate by increasing the ozone concentration. For resistivity anomalies, the ultrapure water supply unit 203 and the status of the receiving flow path can be checked; for particulate matter, total organic carbon, or metal ion-related detection results anomalies, the system maintains reflux or drainage until the detection results re-enter the target process window.

[0070] Combination Figure 1 When the device experiences repeated startups or power-on initialization anomalies, the control unit 209 initiates the process step-by-step in the following order: gas pretreatment, ultrapure water supply, instantaneous water film formation, pressurization and pressure building, pressure release and soft pressure reduction state establishment, online detection and confirmation, and opening of the cleaning equipment interface 210. If a previous condition is not met, the next stage remains closed. For example, the cleaning equipment interface 210 is not opened until the pressurized dissolved gas tower 206 has entered the set pressure range; the system is not allowed to directly enter the high-flow-rate liquid supply state until the pressure release and soft pressure reduction unit 207 has established a stable output pressure.

[0071] Combination Figure 3 and Figure 5 In one embodiment of the control device, the aforementioned method can be corresponding to a gas pretreatment control module, an ozone generation control module, a gas-water merging control module, a water film instantaneous generation control module, a pressurization dissolved gas control module, a pressure release soft decompression control module, an online detection and processing module, and a cleaning equipment liquid supply switching control module. These functional modules are divided according to their control functions and do not require separate independent physical controllers; each module can be executed as a program logic segment, state machine, function block, or instruction set in the control unit 209.

[0072] Combination Figure 5The gas pretreatment control module receives the operating status of the gas pretreatment unit 201 and sets the start-up conditions for the ozone generating unit 202; the ozone generating control module adjusts the ozone generating unit 202 according to the outlet ozone water concentration deviation; the gas-liquid merging control module adjusts the gas-liquid ratio according to the gas phase flow rate and liquid phase flow rate; the instantaneous water film generation control module adjusts the liquid phase flow rate entering the instantaneous water film generation unit 205 or the film formation execution status according to the ultrapure water flow rate and the selected liquid film thickness range; the pressurization dissolved gas control module receives the pressure detection component 2 Based on the 065 and temperature detection results, the pressurized dissolved air tower 206 is controlled for pressure building, pressure holding, water discharge, and venting; the pressure release soft pressure reduction control module adjusts the working status of the first throttling structure 2071, the second throttling structure 2072, and the back pressure valve 2073; the online detection and processing module determines whether the ozone water concentration, pressure, temperature, flow rate, resistivity, and related water quality detection results have entered the target process window; the cleaning equipment liquid supply switching control module controls the cleaning equipment interface 210 to switch between constant pressure liquid supply, reflux, liquid discharge, or sampling accordingly.

[0073] Combination Figure 8 In one embodiment of an electronic device, the electronic device 300 for implementing the functions of the control unit 209 may include a processor 301, a memory 302, a communication interface 303, an input / output interface 304, and an internal bus 305 connecting the aforementioned components. The processor 301 is capable of executing control programs and data operations. The memory 302 is used to store control programs, equipment parameters, target process windows, current operating status, and abnormal records. The communication interface 303 can be used to receive digital communication information sent by the online detection unit 208, the cleaning equipment 220, or other control nodes. The input / output interface 304 can receive detection signals in the form of analog quantities, switch quantities, or pulses, and output corresponding control signals to the ozone generating unit 202, the ultrapure water supply unit 203, the instantaneous water film generating unit 205, the pressurized dissolved air tower 206, the pressure release soft decompression unit 207, and the cleaning equipment interface 210. Depending on the type of external device interface, the same object can be connected via the communication interface 303 or the input / output interface 304.

[0074] like Figure 8 As shown, after the electronic device 300 is powered on, the processor 301 reads program instructions from the memory 302 and sequentially executes gas pretreatment confirmation, ozone generation, gas-water merging, instantaneous water film formation, near-isothermal pressurization and dissolution, pressure release and soft depressurization, online detection and comparison, and cleaning equipment liquid supply switching operations. After each control output is completed, the processor 301 continues to obtain corresponding feedback through the communication interface 303 or the input / output interface 304. When the output instruction and the feedback status are inconsistent, the processor 301 records the abnormal status and calls the aforementioned lockout, bypass, load reduction, or controlled emission logic, instead of continuing to execute subsequent steps unconditionally.

[0075] In one embodiment of a computer-readable storage medium, the program instructions for implementing steps S101 to S108 can be stored in a non-volatile semiconductor memory, flash memory, erasable and rewritable memory, solid-state storage device, or other physical storage medium that can be read by an electronic device. Alternatively, some operating data can be temporarily stored in volatile memory during device operation. When the program is read and executed by the processor 301, the electronic device 300 coordinates and controls the gas pretreatment unit 201, ozone generation unit 202, ultrapure water supply unit 203, instantaneous water film generation unit 205, pressurized dissolved air tower 206, pressure release soft decompression unit 207, and cleaning equipment interface 210 according to the aforementioned method, thereby realizing the preparation and stable supply of semiconductor-grade high-concentration ozone water.

[0076] The above description is merely a specific embodiment of this application, but the scope of protection of this application is not limited thereto. Any variations or substitutions that can be easily conceived by those skilled in the art within the scope of the technology disclosed in this application should be included within the scope of protection of this application. Therefore, the scope of protection of this application should be determined by the scope of the claims.

Claims

1. An ozone water preparation and supply device for semiconductor wafers, comprising an ozone generating unit, an ultrapure water supply unit, and an air-water mixing unit connecting the two, characterized in that: The output end of the gas-water combination unit is sequentially connected to the instantaneous water film generation unit, the pressurized dissolved air tower, the pressure release soft pressure reduction unit, and the cleaning equipment interface; The instantaneous water film generation unit expands the premixed aqueous phase output from the gas-water merging unit into a continuous liquid film and forms a gas flow channel adjacent to the continuous liquid film. Ozone is pre-pressurized and pre-transferred to the aqueous phase through the liquid film interface along the gas flow channel. The pressurized dissolved gas tower is equipped with heat exchange components that exchange heat with the tower body to pressurize and dissolve the gas-liquid mixture after pre-mass transfer. The pressure relief soft pressure reduction unit includes at least two stages of series throttling structures, a buffer chamber disposed between adjacent throttling structures, and a back pressure valve communicating with the buffer chamber.

2. The ozone water preparation and supply device for semiconductor wafers according to claim 1, characterized in that: The instantaneous water film generation unit includes a shell, a premixed flow inlet, a film-forming zone, and a gas-liquid mixture outlet; The film-forming zone expands the aqueous phase input from the premixed inlet into multiple liquid films, and a gas flow channel connected to the premixed inlet and the gas-liquid mixture outlet is maintained between adjacent liquid films; The average thickness of the multilayer liquid film is 10-200 micrometers, and is determined based on the geometry of the film-forming channel, the pre-calibrated relationship between the effective film width and the liquid flow rate.

3. The ozone water preparation and supply device for semiconductor wafers according to claim 2, characterized in that: The pressurized dissolved gas tower includes a tower body, a gas-liquid inlet flow path, a water outlet flow path, an air outlet flow path, a pressure detection component, and a heat exchange component. The gas-liquid inlet flow path receives the gas-liquid mixture that has undergone pre-mass transfer through multiple liquid films. The pressure detection component detects the working pressure of the tower body, and the heat exchange component forms a heat exchange relationship with the tower body. The working pressure is 0.2-0.8 MPa, the gas-liquid ratio is 0.5-3.0, and the liquid phase temperature rise during the pressurization and dissolution process is no more than 1℃.

4. The ozone water preparation and supply device for semiconductor wafers according to claim 3, characterized in that: The at least two-stage series throttling structure includes a first throttling structure and a second throttling structure arranged sequentially along the ozone water flow direction; The buffer chamber is located between the first throttling structure and the second throttling structure. The back pressure valve is connected to the buffer chamber and limits the pressure fluctuation of the buffer chamber. The first throttling structure bears part of the pressure difference. After the ozone water is stabilized by the buffer chamber and the back pressure valve, it is then depressurized by the second throttling structure. The average pressure drop rate is no more than 0.05 MPa / s.

5. The ozone water preparation and supply device for semiconductor wafers according to claim 4, characterized in that: The film-forming region is composed of at least one of the following structures: microchannel, slit, annular, hydrophilic porous sheet, rotating disk, centrifugal, falling film, and curtain, and includes multiple parallel film-forming channels. Each parallel film-forming channel shares the total water flow. The gas-water junction unit is equipped with a gas branch corresponding to each parallel film-forming channel, and the gas flow rate is synchronously distributed with the liquid flow rate.

6. The ozone water preparation and supply device for semiconductor wafers according to claim 5, characterized in that: Multiple pressurized dissolved air towers are set up with the same structure and function. The multiple pressurized dissolved air towers are connected in parallel between the instantaneous water film generation unit and the pressure release soft pressure reduction unit. Each pressurized dissolved air tower receives a gas-liquid mixture that has undergone pre-mass transfer via a continuous liquid film, and is equipped with heat exchange components and pressure detection components. The outlet water branch of each pressurized dissolved air tower maintains a controlled pressure before merging into the shared pressure release soft pressure reduction unit.

7. The ozone water preparation and supply device for semiconductor wafers according to claim 6, characterized in that: It also includes an online detection unit and a control unit. The cleaning equipment interface includes a constant pressure liquid supply branch, a return branch, a drain branch, and a sampling branch. The control unit receives the detection results from the online detection unit, uses the allowable range of the detection results as the target process window, and maps the ozone water cleaning state and the state where the detection results enter the target process window to the constant pressure liquid supply branch. The standby state and the state where the detection results do not enter the target process window are both mapped to the return branch. The state that does not meet the release conditions is mapped to the drain branch, and the detection and verification state is mapped to the sampling branch.

8. The ozone water preparation and supply device for semiconductor wafers according to claim 7, characterized in that: The upstream delivery pipeline of the cleaning equipment interface is equipped with an observation section. Abnormal bubble states at the output end within the observation section include visible bubbles, continuous bubble flow, and milky white gas evolution state. The cleaning equipment interface is equipped with an ozone water concentration detection interface, an output pressure detection interface, and an output flow detection interface. The ozone water concentration at the cleaning equipment interface is 80-120 mg / L, the output pressure is 0.1-0.4 MPa, and the output flow rate is 0.5-10 L / min. Furthermore, the resistivity of the ozone water without added cleaning chemicals after temperature compensation at 25℃ is not less than 18 MΩ·cm.

9. The ozone water preparation and supply device for semiconductor wafers according to claim 8, characterized in that: The control unit includes a processor, a memory, a communication interface, and an input / output interface; The memory stores the control program, target process window, and exception records; the communication interface receives digital communication information, and the input / output interface receives analog quantities, switch quantities, and pulse detection signals and outputs control signals. When the control command output by the processor matches the corresponding feedback state, the processor executes the next control action; when the control command does not match the corresponding feedback state, the processor records the exception and executes at least one of the following: lock-up, bypass, load reduction, and controlled emission. The processor maintains liquid supply when the detection data is valid and the target process window is entered; in any state of communication interruption or unconfirmed detection data validity, it is prohibited to increase the operating power of the ozone generating unit based on the last detection data, and the cleaning equipment interface should be shut down and switched to the return branch; After communication is restored, maintain the return flow and complete at least one effective sampling. Resume liquid supply after confirming that the detection data has entered the target process window and is consistent with the execution status. If the detection data does not meet the release conditions, switch to the drain branch.

10. A method for preparing and supplying ozone water for semiconductor wafers, characterized in that, The ozone water preparation and supply apparatus for semiconductor wafers according to any one of claims 1-9 performs the following steps: The ozone gas output from the ozone generating unit and the ultrapure water output from the ultrapure water supply unit are combined in the gas-water mixing unit to form a gas-water premixed flow. Before the gas-water premixed flow enters the pressurized dissolved gas tower, the aqueous phase is expanded into a continuous liquid film, allowing ozone to move along the gas flow channel adjacent to the continuous liquid film and undergo pre-pressurization mass transfer to the aqueous phase through the liquid film interface. The pre-mass-transferred gas-liquid mixture is fed into a pressurized dissolved gas tower equipped with heat exchange components, and pressurized dissolution is carried out under the condition that the liquid phase temperature rise is limited by the heat exchange components; The ozone water obtained by pressurization and dissolution is passed through at least two stages of series throttling structures in sequence, and the pressure is released in stages by using a buffer chamber set between two adjacent stages of series throttling structures and a back pressure valve connected to the buffer chamber. The ozone water, after being released from pressure in stages, is output through the interface of the cleaning equipment.

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