A cleaning agent for semiconductor optical devices, and a method for preparing and using the same

Abstract

The application relates to the technical field of semiconductor optical device cleaning, and discloses a cleaning agent for semiconductor optical devices and a preparation method and application thereof. The cleaning agent is a water-based cleaning agent, which is composed of the following components in mass fraction: organic solvent: 5-50 wt%; organic amine buffer: 10-20 wt%; metal ion chelating agent: 0.1-10 wt%; non-ionic surfactant: 0.5-15 wt%; dispersant: 0.1-5 wt%; antistatic agent: 0.1-5 wt%; hydrogen peroxide: 0.3-3 wt%; and the balance is deionized water. The application completely discards inorganic alkali and anionic surfactant, controls the pH in the organic amine buffer system to be 6.0-8.5, and cooperatively introduces the dispersant and the antistatic agent, so that zero chemical corrosion and zero physical scratch cleaning of fluorophosphatide optical glass are realized, and the re-deposition of pollutants and the secondary pollution of static electricity are effectively prevented.

Description

Technical Field

[0001] This invention relates to the field of semiconductor optical device cleaning technology, specifically to a cleaning agent for semiconductor optical devices, its preparation method, and its application. Background Technology

[0002] With the rapid development of high-end photography, astronomical observation, precision mapping, automotive optics, infrared imaging, and optical communication, semiconductor optical devices are continuously evolving towards higher resolution, wider spectral response, miniaturized integration, and adaptability to extreme environments. Traditional optical glass can no longer meet the stringent requirements of these fields for ultra-low dispersion, high transmittance, and excellent imaging quality. Fluorophosphate optical glasses, represented by the FCD100, FCD515, ZPK, FK61, and FK95 series, with their extremely low refractive index (nd≈1.437) and extremely high Abbe number (vd≈95.1), can effectively eliminate secondary spectra and achieve ultra-high-definition imaging. Their optical performance is comparable to that of natural fluorite, and they have become the core material choice for high-end semiconductor optical devices (such as lithography machine lenses, high-definition camera modules, automotive optical sensors, and infrared detection windows).

[0003] However, while fluorophosphate optical glasses offer excellent optical performance, they also present extremely challenging processing and cleaning problems. These glasses generally suffer from inherent defects such as softness, poor chemical stability, and extremely poor water and acid resistance. Their surfaces are highly susceptible to hydrolysis when exposed to water or acidic / alkaline media, leading to irreversible damage such as whitening, blue haze, and crystallization. In the manufacturing process of semiconductor optical devices, cleaning is an indispensable critical step before subsequent processes such as coating and packaging; the quality of cleaning directly determines the optical performance and service reliability of the device. Because fluorophosphate glass is extremely soft and highly sensitive to chemical corrosion, conventional cleaning processes easily cause scratches, corrosion pits, and increased micro-roughness on the surface, severely impacting device yield and the performance of subsequent optical systems.

[0004] Currently, commonly used optical cleaning agents in industry are mainly developed for hard optical materials such as quartz glass and K9 glass. For example, existing cleaning agents use a compound system of inorganic alkali (such as sodium hydroxide and potassium hydroxide) and anionic surfactants. Although this can effectively remove contaminants such as polishing powder and grease, the strongly alkaline environment will severely corrode the surface of fluorophosphate glass. Anionic surfactants, due to their ionic properties, tend to exacerbate the redeposition of particulate matter on the surface of soft materials during the cleaning process through charge adsorption, thereby increasing the risk of scratches.

[0005] In recent years, although a few cleaning solutions for fluorophosphate glass have been proposed, such as anhydrous or low-water cleaning systems using Triton and isopropanol to reduce the probability of hydrolysis, these solutions have limited ability to remove solid contaminants such as polishing powder and abrasive particles, and there is still a risk of residue after cleaning. They are only suitable for specific pre-coating scenarios and cannot meet the precision cleaning requirements of the entire semiconductor optical device manufacturing process. In addition, traditional ultrasonic cleaning processes are prone to cavitation corrosion damage on soft material surfaces due to improper control of cavitation energy. Existing technologies generally face a contradiction between cleaning power and substrate protection. Formulas with strong cleaning power often contain inorganic alkalis or ionic surfactants that corrode the substrate or cause secondary pollution, while formulas that protect the substrate cannot achieve thorough decontamination. There is a lack of a dedicated cleaning solution that can simultaneously achieve highly efficient decontamination and zero physicochemical damage to fluorophosphate optical glass.

[0006] Furthermore, in the precision cleaning of semiconductor optical devices, if contaminants are not effectively prevented from redepositing on the device surface after being removed, secondary contamination will occur, directly affecting the adhesion of subsequent coatings and the reliability of the device. Simultaneously, the static charge generated on the surface of optical devices during cleaning and drying processes due to friction and peeling will attract suspended particles from the air, further exacerbating surface contamination. However, existing optical glass cleaning agents generally lack systematic solutions to the problems of redeposited contamination and electrostatic adsorption.

[0007] Therefore, it is of great significance to provide a solution for the precision cleaning of fluorophosphate optical glass in the semiconductor optical device manufacturing process that is highly efficient, with zero corrosion, zero scratches, and no residue. Summary of the Invention

[0008] The present invention aims to overcome the technical defects of existing optical glass cleaning agents, which contain inorganic alkalis or anionic surfactants and are prone to chemical corrosion and physical scratches on fluorophosphate optical glass, and lack means to prevent the redeposition of contaminants and electrostatic secondary pollution.

[0009] To achieve the above objectives, a first aspect of the present invention provides a cleaning agent for semiconductor optical devices, the cleaning agent being a water-based cleaning agent and composed of the following components by mass fraction: Organic solvent: 5-50 wt% Organic amine buffer: 10-20 wt% Metal ion chelating agent: 0.1-10 wt%; Nonionic surfactant: 0.5-15 wt%; Dispersant: 0.1-5 wt%; Antistatic agent: 0.1-5 wt%; Hydrogen peroxide: 0.3-3 wt%; The remainder is deionized water; The cleaning agent, when diluted at 5 wt%, has a pH value of 6.0-8.5; The cleaning agent does not contain inorganic alkali or anionic surfactants.

[0010] A second aspect of the present invention provides a method for preparing the cleaning agent for semiconductor optical devices described in the first aspect, the method using the substance described in the first aspect, comprising the following steps: (1) Add the metal ion chelating agent and the organic amine buffer to deionized water for the first mixing to obtain mixture I; (2) The nonionic surfactant and hydrogen peroxide solution are added to mixture I in sequence for a second mixing to obtain mixture II; (3) After premixing the dispersant with a portion of the organic solvent, add it to the mixture II for a third mixing to obtain mixture III; (4) Mix the mixture III with the antistatic agent and the remaining organic solvent in a fourth mixing, and filter it through a micron-level filter to obtain the cleaning agent for semiconductor optical devices.

[0011] A third aspect of the present invention provides the application of the cleaning agent for semiconductor optical devices described in the second aspect in cleaning semiconductor optical devices, comprising the following steps: S1. The cleaning agent is mixed with deionized water to obtain a first cleaning working solution and a second cleaning working solution, wherein the concentration of the cleaning agent in the first cleaning working solution is higher than the concentration of the cleaning agent in the second cleaning working solution. S2. Immerse the semiconductor optical device to be cleaned in the first cleaning working solution and ultrasonically clean it at a temperature of 30-45℃ for 0.5-5 minutes at an ultrasonic frequency of 40-1500kHz. S3. Take out the semiconductor optical device obtained in step S2 and rinse it with deionized water; S4. Immerse the semiconductor optical device rinsed in step S3 into the second cleaning working solution and ultrasonically clean it at a temperature of 30-45℃ for 0.5-5 minutes at an ultrasonic frequency of 40-1500kHz. S5. Take out the semiconductor optical device obtained in step S4, rinse it with deionized water, and then dry it.

[0012] Compared with the prior art, the present invention has at least the following beneficial effects: 1. This invention addresses the three inherent defects of FCD100, FCD515, ZPK, FK61, and FK95 series fluorophosphate optical glasses by systematically designing a formula that mitigates their susceptibility to acids and alkalis, their extreme softness, and their susceptibility to scratches. By completely eliminating the use of inorganic alkalis and relying solely on an organic amine buffer system to control the pH within a weakly alkaline to neutral range, the chemical corrosion of the fluorophosphate glass surface by inorganic alkalis is fundamentally avoided, preventing irreversible damage such as whitening, blue haze, and crystallization after cleaning. Simultaneously, the complete absence of anionic surfactants prevents the increased adhesion of particles to the soft surface due to charge adsorption. Combined with the excellent wetting and dispersing properties of nonionic surfactants, zero physical scratches are achieved on the soft surface. Hydrogen peroxide is also introduced to further enhance the oxidative removal of stubborn organic contaminants.

[0013] 2. This invention significantly reduces the surface tension and critical micelle concentration of the cleaning solution through the synergistic effect of the nonionic surfactant compound system, enhancing the emulsification, solubilization, and dispersion capabilities for grease contaminants and polishing powder particles. Simultaneously, in conjunction with the penetration and swelling effects of organic solvents and the complexation and capture effects of chelating agents on metal ions, it achieves highly efficient and synergistic removal of complex contaminants such as polishing powder, grinding particles, grease, and fingerprints. After cleaning, the device surface is free of gray spots, fine scratches, whitening, and white fogging. No wiping is required; only pure water rinsing is needed to meet the precision cleanliness requirements of semiconductor optical devices.

[0014] 3. This invention introduces both a dispersant and an antistatic agent into the fluorophosphate optical glass cleaning agent, forming a dual anti-secondary contamination mechanism that combines steric hindrance stabilization and electrostatic neutralization. The dispersant, through the steric hindrance effect of its macromolecular chains, stably disperses the detached contaminant particles in the cleaning solution, preventing their redeposition onto the clean device surface. The antistatic agent, through ion neutralization and surface resistivity reduction, inhibits the generation of static charge at its source and accelerates the dissipation of existing charges, eliminating the risk of secondary contamination caused by electrostatic adsorption. The synergistic effect of both agents ensures the long-lasting high cleanliness of the surface after cleaning from two dimensions, providing reliable surface quality assurance for subsequent processes such as coating and encapsulation.

[0015] 4. The organic amine buffer system used in this invention can maintain a stable pH range of 6.0-8.5 during the cleaning process, overcoming the shortcomings of traditional inorganic alkali systems where pH is difficult to control precisely. Combined with a high-frequency, short-duration ultrasonic cleaning process, it ensures detergency while minimizing damage to soft material surfaces from cavitation energy, with clearly defined process parameters. Large-scale cleaning verification across 10 batches and 10,000 lenses has yielded a stable cleaning yield of 97.1-98.6%, a significant improvement over existing similar products, achieving excellent cost reduction and efficiency gains. Detailed Implementation

[0016] The endpoints and any values ​​of the ranges disclosed herein are not limited to the precise ranges or values, and these ranges or values ​​should be understood to include values ​​close to these ranges or values. For numerical ranges, the endpoint values ​​of the various ranges, the endpoint values ​​of the various ranges and individual point values, and individual point values ​​can be combined with each other to obtain one or more new numerical ranges, which should be considered as specifically disclosed herein.

[0017] As described above, the first aspect of the present invention provides a cleaning agent for semiconductor optical devices, the cleaning agent being a water-based cleaning agent and composed of the following components by mass fraction: Organic solvent: 5-50 wt% Organic amine buffer: 10-20 wt% Metal ion chelating agent: 0.1-10 wt%; Nonionic surfactant: 0.5-15 wt%; Dispersant: 0.1-5 wt%; Antistatic agent: 0.1-5 wt%; Hydrogen peroxide: 0.3-3 wt%; The remainder is deionized water; The cleaning agent, when diluted at 5 wt%, has a pH value of 6.0-8.5; The cleaning agent does not contain inorganic alkali or anionic surfactants.

[0018] According to a preferred embodiment, the organic amine buffer is selected from at least one of monoisopropanolamine, N-methylmonoethanolamine, diethylenetriamine, triethanolamine, and N-(β-aminoethyl)ethanolamine. In this preferred embodiment, the organic amine buffer can form a reversible protonation equilibrium with hydrogen ions in water through the amino group in its molecule, continuously maintaining the pH within the range of 6.0-8.5 during the cleaning process. This more effectively resists pH fluctuations caused by the dissolution of carbon dioxide and the introduction of contaminants from the air, overcoming the shortcomings of traditional inorganic alkaline systems where pH is difficult to control precisely. This results in the cleaning agent exhibiting superior alkali retention capacity, scratch resistance, anti-fogging, and anti-caking properties.

[0019] In a preferred embodiment, the organic amine buffer is a mixture of the monoisopropanolamine and the triethanolamine.

[0020] Preferably, in the organic amine buffer, the weight ratio of monoisopropanolamine to triethanolamine is 1:0.5-2.

[0021] In a preferred embodiment, the nonionic surfactant is selected from at least two of alkyl glycosides, fatty alcohol polyoxyethylene ethers, isomeric alcohol polyoxyethylene ethers, and cocoamine polyoxyethylene ethers.

[0022] Preferably, the nonionic surfactant is a mixture of the alkyl glycoside and the fatty alcohol polyoxyethylene ether, or a mixture of the alkyl glycoside and the cocoamine polyoxyethylene ether.

[0023] According to a preferred embodiment, the dispersant is selected from at least one of acrylic acid-2-acrylamide-2-methylpropanesulfonic acid copolymer, sodium polyacrylate, and sodium polyaspartate. In this preferred embodiment, it is better able to prevent contaminants from redepositing on the clean component surface and particles from sticking together, thus avoiding the need for further removal and resulting scratches.

[0024] In a preferred embodiment, the antistatic agent is selected from at least one of cocamidopropyl betaine, lauramidopropyl betaine, and polyether-type antistatic agents.

[0025] In a preferred embodiment, the antistatic agent is selected from cocamidopropyl betaine and / or polyoxyethylene polyoxypropylene block copolymer.

[0026] Preferably, the antistatic agent is a mixture of cocamidopropyl betaine and the polyoxyethylene-polyoxypropylene block copolymer. In this preferred embodiment, the lipophilic groups of the antistatic agent can form good compatibility with the cleaning medium and the surface being cleaned, and can be quickly adsorbed and oriented at the interface between the surface and the cleaning medium to form a uniform molecular adsorption film, thereby reducing the amount of electron transfer at the source and inhibiting the generation of static charge; moreover, the ions generated by ionization in the antistatic agent can neutralize the static charge on the substrate surface and accelerate the dissipation of charge.

[0027] In a preferred embodiment, the metal ion chelating agent is selected from at least two of the following: trisodium methylglycine diacetate, tetrasodium 3-hydroxy-2,2′-iminodisuccinate, diethyltriaminepentaacetic acid, disodium ethylenediaminetetraacetate, and 1-hydroxyethylidene-1,1-diphosphonic acid. In this preferred embodiment, the metal ion chelating agent is more easily stripped by surfactants or physical action, while simultaneously converting the metal ions in the washed-off contaminants into soluble complexes, thus better preventing these ions from recombining, agglomerating, and re-attaching on the component surface or within the cleaning tank.

[0028] In a preferred embodiment, the organic solvent is selected from at least one of propylene glycol methyl ether, diethylene glycol butyl ether, dipropylene glycol butyl ether, propylene glycol tert-butyl ether, isopropanol, ethanol, and ethylene glycol monopropyl ether.

[0029] Preferably, the organic solvent is a mixture of propylene glycol methyl ether and dipropylene glycol butyl ether, or a mixture of propylene glycol tert-butyl ether and ethanol. In this preferred embodiment, it can further dissolve non-polar or weakly polar organic matter. The molecules of the organic solvent penetrate into the contaminant, disrupting its cohesive forces, causing it to loosen, swell, and even dissolve. This can significantly reduce the overall surface tension of the cleaning solution and markedly improve its wetting and penetration capabilities for hydrophobic contaminants and complex microstructures.

[0030] Preferably, the cleaning agent satisfies at least one of the following conditions: (a) The organic solvent has a mass fraction of 10-40 wt%; (b) The organic amine buffer has a mass fraction of 15-20 wt%; (c) The mass fraction of the metal ion chelating agent is 2-10 wt%; (d) The mass fraction of the nonionic surfactant is 5-13 wt%; (e) The mass fraction of the dispersant is 0.5-2.5 wt%; (f) The mass fraction of the antistatic agent is 0.5-2 wt%; (g) The mass fraction of the hydrogen peroxide is 0.3-3 wt%.

[0031] As previously described, a second aspect of the present invention provides a method for preparing the cleaning agent for semiconductor optical devices described in the first aspect, the method being carried out using the substance described in the first aspect, comprising the following steps: (1) Add the metal ion chelating agent and the organic amine buffer to deionized water for the first mixing to obtain mixture I; (2) The nonionic surfactant and hydrogen peroxide solution are added to mixture I in sequence for a second mixing to obtain mixture II; (3) After premixing the dispersant with a portion of the organic solvent, add it to the mixture II for a third mixing to obtain mixture III; (4) Mix the mixture III with the antistatic agent and the remaining organic solvent in a fourth mixing, and filter it through a micron-level filter to obtain the cleaning agent for semiconductor optical devices.

[0032] In a preferred embodiment, the method of the present invention controls the amount of each substance so that the mass fraction of the following components in the obtained cleaning agent for semiconductor optical devices is: Organic solvent: 5-50 wt% Organic amine buffer: 10-20 wt% Metal ion chelating agent: 0.1-10 wt%; Nonionic surfactant: 0.5-15 wt%; Dispersant: 0.1-5 wt%; Antistatic agent: 0.1-5 wt%; Hydrogen peroxide: 0.3-3 wt%; The remainder is deionized water.

[0033] It should be noted that, in this invention, the mass fraction of "hydrogen peroxide" is calculated as pure hydrogen peroxide.

[0034] Preferably, in step (2), the concentration of the hydrogen peroxide solution is 30 wt%.

[0035] Preferably, the first mixture, the second mixture, the third mixture, and the fourth mixture each independently satisfy at least the following conditions: they are carried out under stirring conditions, with a rotation speed of 700-1200 rpm and a time of 10-40 min.

[0036] It should be noted that, in this invention, the portion of the organic solvent and the remaining portion of the organic solvent together constitute the total amount of the organic solvent.

[0037] Preferably, the portion of the organic solvent accounts for 10-30 wt% of the total organic solvent.

[0038] As described above, a third aspect of the present invention provides the application of the cleaning agent for semiconductor optical devices described in the second aspect in cleaning semiconductor optical devices, comprising the following steps: S1. The cleaning agent is mixed with deionized water to obtain a first cleaning working solution and a second cleaning working solution, wherein the concentration of the cleaning agent in the first cleaning working solution is higher than the concentration of the cleaning agent in the second cleaning working solution. S2. Immerse the semiconductor optical device to be cleaned in the first cleaning working solution and ultrasonically clean it at a temperature of 30-45℃ for 0.5-5 minutes at an ultrasonic frequency of 40-1500kHz. S3. Take out the semiconductor optical device obtained in step S2 and rinse it with deionized water; S4. Immerse the semiconductor optical device rinsed in step S3 into the second cleaning working solution and ultrasonically clean it at a temperature of 30-45℃ for 0.5-5 minutes at an ultrasonic frequency of 40-1500kHz. S5. Take out the semiconductor optical device obtained in step S4, rinse it with deionized water, and then dry it.

[0039] Preferably, in the first cleaning working solution and / or the second cleaning working solution, the weight ratio of the cleaning agent to deionized water is 1:15-25.

[0040] This invention further employs a graded dilution cleaning process. The first cleaning uses a higher concentration of cleaning solution, leveraging its strong decontamination ability to quickly remove most contaminants from the device surface. The second cleaning uses a lower concentration of cleaning solution, further removing residual contaminants while effectively reducing the amount of cleaning agent residue on the device surface. This reduces rinsing water consumption and rinsing time, thereby improving cleaning efficiency. This graded dilution cleaning process, combined with high-frequency short-time ultrasonic cleaning, significantly reduces the cost of cleaning agents while ensuring high cleaning yield, resulting in better economic and environmental benefits.

[0041] In this invention, when the ultrasonic frequency is below 40kHz, the collapse energy of cavitation bubbles is too high, which can easily cause cavitation corrosion damage on the surface of soft materials; when the frequency is above 1500kHz, the cavitation effect weakens, and the cleaning efficiency decreases. This invention selects high-frequency ultrasound of 40kHz-1500kHz, combined with short-time cleaning, to ensure the cleaning power while minimizing physical damage to the surface of soft materials.

[0042] In a preferred embodiment, the semiconductor optical device is fluorophosphate optical glass.

[0043] Preferably, the fluorophosphate optical glass is at least one of the FCD100, FCD515, ZPK, FK61, and FK95 series.

[0044] The present invention will be described in detail below through examples. Unless otherwise specified, the raw materials used are all commercially available products.

[0045] In the following examples, unless otherwise specified, each “parts by weight” means 10g.

[0046] Commercially available optical glass cleaner: purchased from Kao Corporation, Japan, brand name CLEANTHROUGH RI-100.

[0047] In the following examples, unless otherwise specified, "room temperature" means a temperature of 20-30℃.

[0048] Polyoxyethylene-polyoxypropylene block copolymer: Polyoxyethylene-polyoxypropylene block copolymer I: is block polyether Poloxamer 124; Polyoxyethylene-polyoxypropylene block copolymer II: is block polyether Poloxamer 188.

[0049] Example 1

[0050] This embodiment illustrates the method for preparing a cleaning agent for semiconductor optical devices provided by the present invention, referring to the dosages and parameters in Table 1, and following the steps included: (1) Add the metal ion chelating agent and the organic amine buffer to deionized water and mix for 30 minutes at 1200 rpm to obtain mixture I; (2) Add the nonionic surfactant and the 30wt% hydrogen peroxide solution to the mixture I in sequence and mix for 10 minutes at 700 rpm to obtain mixture II; (3) After premixing the dispersant with a portion of the organic solvent, add it to the mixture II and mix for a third time at 700 rpm for 10 min to obtain mixture III; (4) Mix the mixture III with the antistatic agent and the remaining organic solvent at a speed of 1200 rpm for 30 min, and after filtering through a micron-level filter, 1000 g of the cleaning agent for semiconductor optical devices is obtained, named P1. The organic solvent comprises 15 wt% of the total organic solvent.

[0051] Examples 2-9

[0052] The procedure was carried out using a method similar to that in Example 1, except that the types and amounts of substances were different, as detailed in Table 1. Finally, the cleaning agents for semiconductor optical devices obtained in Examples 2-9 were named P2, P3, P4, P5, P6, P7, P8, and P9, respectively. Table 1: ; ;

[0053] Note: The values ​​in the table represent the amount added / parts by weight; "-" indicates that no addition was made.

[0054] Comparative Example 1 The method is similar to that in Example 1, except that in step (3), the amount of dispersant added is 0 parts by weight; The final cleaning agent was named DP1.

[0055] Comparative Example 2 The method is similar to that in Example 1, except that in step (4), the amount of antistatic agent added is 0 parts by weight; The final cleaning agent was named DP2.

[0056] Comparative Example 3 The method is similar to that in Example 1, except that in step (2), the amount of hydrogen peroxide solution added is 0 parts by weight; The final cleaning agent was named DP3.

[0057] Test Example 1 This application example tests the cleaning agents prepared in the above examples, including: S1. The cleaning agent and deionized water are mixed at a weight ratio of 1:20 to obtain a first cleaning working solution, and the cleaning agent and deionized water are mixed at a weight ratio of 1:30 to obtain a second cleaning working solution. S2. Immerse the semiconductor optical devices to be cleaned (FCD100, ZK95 and FK95 respectively) in the first cleaning working solution and ultrasonically clean them at 35°C for 0.5 min with an ultrasonic frequency of 68 kHz and a power of 900 W. S3. Take out the semiconductor optical device obtained in step S2 and rinse it with deionized water; S4. Immerse the semiconductor optical device rinsed in step S3 into the second cleaning working solution and ultrasonically clean it at 35°C for 0.5 min with an ultrasonic frequency of 80 kHz and a power of 900 W. S5. Take out the semiconductor optical device obtained in step S4, rinse it with overflow high-purity water 6 times, and then spin dry.

[0058] The surface tension of semiconductor optical devices made of FCD100, ZK95, and FK95 after cleaning was measured, and the cleaning yield was recorded for a large-scale cleaning test of 10,000 lenses in 10 batches. The standard for judging as good was that under a strong LED10 lamp with yellow light and an output power of 10W-15W, the lens was inspected with a 20x microscope and found to be free of scratches, white fog, haze, and white spots.

[0059] A commercially available optical glass cleaning agent was used as a comparison product, and the results are shown in Table 2.

[0060] The results show that the cleaning agent provided by this invention has strong cleaning power, leaves no residue, leaves no streaks, and is easy to rinse. After cleaning materials FCD100, ZK95, and FK95, no wiping is required; only rinsing with pure water is needed. The cleaning agent provided by this invention is highly soluble in water, does not easily evaporate, has no irritating odor, and poses no harm to the cleaning environment or cleaning personnel. The cleaning agent provided by this invention produces less foam during the cleaning process and leaves no watermarks after cleaning. The above experimental results show that the present invention achieves zero chemical corrosion and zero physical scratch cleaning of fluorophosphate optical glass by completely eliminating inorganic alkali and anionic surfactant, using an organic amine buffer system to control pH, and synergistically introducing dispersants and antistatic agents, while effectively preventing the redeposition of pollutants and secondary electrostatic pollution.

[0061] The preferred embodiments of the present invention have been described in detail above; however, the present invention is not limited thereto. Within the scope of the inventive concept, various simple modifications can be made to the technical solutions of the present invention, including combinations of various technical features in any other suitable manner. These simple modifications and combinations should also be considered as the content disclosed in the present invention and are all within the protection scope of the present invention.

Claims

1. A cleaning agent for semiconductor optical devices, characterized in that, This cleaning agent is a water-based cleaning agent, composed of the following components by mass fraction: Organic solvent: 5-50 wt% Organic amine buffer: 10-20 wt% Metal ion chelating agent: 0.1-10 wt%; Nonionic surfactant: 0.5-15 wt%; Dispersant: 0.1-5 wt%; Antistatic agent: 0.1-5 wt%; Hydrogen peroxide: 0.3-3 wt%; The remainder is deionized water; The cleaning agent, when diluted at 5 wt%, has a pH value of 6.0-8.5; The cleaning agent does not contain inorganic alkali or anionic surfactants.

2. The cleaning agent according to claim 1, characterized in that, The organic amine buffer is selected from at least one of monoisopropanolamine, N-methylmonoethanolamine, diethylenetriamine, triethanolamine, and N-(β-aminoethyl)ethanolamine.

3. The cleaning agent according to claim 1 or 2, characterized in that, The nonionic surfactant is selected from at least two of alkyl glycosides, fatty alcohol polyoxyethylene ethers, isomeric alcohol polyoxyethylene ethers, and cocoamine polyoxyethylene ethers.

4. The cleaning agent according to claim 1 or 2, characterized in that, The dispersant is selected from at least one of acrylic acid-2-acrylamide-2-methylpropanesulfonic acid copolymer, sodium polyacrylate, and sodium polyaspartate. And / or, the antistatic agent is selected from at least one of cocamidopropyl betaine, lauramidopropyl betaine, and polyether-type antistatic agents.

5. The cleaning agent according to claim 1 or 2, characterized in that, The metal ion chelating agent is selected from at least two of the following: trisodium methylglycine diacetate, tetrasodium 3-hydroxy-2,2′-iminodisuccinate, diethyltriaminepentaacetic acid, disodium ethylenediaminetetraacetic acid, and 1-hydroxyethylidene-1,1-diphosphonic acid.

6. The cleaning agent according to claim 1 or 2, characterized in that, The organic solvent is selected from at least one of propylene glycol methyl ether, diethylene glycol butyl ether, dipropylene glycol butyl ether, propylene glycol tert-butyl ether, isopropanol, ethanol, and ethylene glycol monopropyl ether.

7. The cleaning agent according to claim 1 or 2, characterized in that, The cleaning agent satisfies at least one of the following conditions: (a) The organic solvent has a mass fraction of 10-40 wt%; (b) The organic amine buffer has a mass fraction of 15-20 wt%; (c) The mass fraction of the metal ion chelating agent is 2-10 wt%; (d) The mass fraction of the nonionic surfactant is 5-13 wt%; (e) The mass fraction of the dispersant is 0.5-2.5 wt%; (f) The mass fraction of the antistatic agent is 0.5-2 wt%; (g) The mass fraction of the hydrogen peroxide is 0.3-3 wt%.

8. A method for preparing the cleaning agent for semiconductor optical devices according to any one of claims 1-7, characterized in that, This method, using the substance described in any one of claims 1-7, includes the following steps: (1) Add the metal ion chelating agent and the organic amine buffer to deionized water for the first mixing to obtain mixture I; (2) The nonionic surfactant and hydrogen peroxide solution are added to mixture I in sequence for a second mixing to obtain mixture II; (3) After premixing the dispersant with a portion of the organic solvent, add it to the mixture II for a third mixing to obtain mixture III; (4) Mix the mixture III with the antistatic agent and the remaining organic solvent in a fourth mixing, and filter it through a micron-level filter to obtain the cleaning agent for semiconductor optical devices.

9. The application of a cleaning agent according to any one of claims 1-7 or a cleaning agent for semiconductor optical devices prepared by the method of claim 8 in cleaning semiconductor optical devices, characterized in that, Includes the following steps: S1. The cleaning agent is mixed with deionized water to obtain a first cleaning working solution and a second cleaning working solution, wherein the concentration of the cleaning agent in the first cleaning working solution is higher than the concentration of the cleaning agent in the second cleaning working solution. S2. Immerse the semiconductor optical device to be cleaned in the first cleaning working solution and ultrasonically clean it at a temperature of 30-45℃ for 0.5-5 minutes at an ultrasonic frequency of 40-1500kHz. S3. Take out the semiconductor optical device obtained in step S2 and rinse it with deionized water; S4. Immerse the semiconductor optical device rinsed in step S3 into the second cleaning working solution and ultrasonically clean it at a temperature of 30-45℃ for 0.5-5 minutes at an ultrasonic frequency of 40-1500kHz. S5. Take out the semiconductor optical device obtained in step S4, rinse it with deionized water, and then dry it.

10. The application according to claim 9, characterized in that, The semiconductor optical device is fluorophosphate optical glass.

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