Semiconductor processing apparatus and method of magnetic field regulation of semiconductor processing apparatus

Abstract

The application discloses a semiconductor process equipment and a magnetic field regulation method of the semiconductor process equipment, and belongs to the technical field of semiconductor processing. The semiconductor process equipment comprises a reaction chamber, an upper electrode assembly, a wafer support, a temperature detection assembly and a control module. The upper electrode assembly comprises a rotatable first magnetic mechanism, and the first magnetic mechanism comprises a plurality of first electromagnetic components. The wafer support is arranged in the reaction chamber. The temperature detection assembly comprises at least two spaced wafer temperature detection elements. Each wafer temperature detection element is opposite to a different position of the wafer support. The wafer support is opposite to the first magnetic mechanism. The control module is used for determining a target adjustment position according to detection signals of the wafer temperature detection elements, and adjusting the current size and / or direction of the first electromagnetic components corresponding to the target adjustment position. The scheme can automatically adjust the distribution of the magnetic field strength of the first magnetic mechanism in the process, so as to improve the processing uniformity of the wafer.

Description

Technical Field

[0001] This application belongs to the field of semiconductor processing technology, specifically relating to a semiconductor process equipment and a method for controlling the magnetic field of the semiconductor process equipment. Background Technology

[0002] In semiconductor manufacturing, magnetron sputtering deposition is used to deposit metals on the surface of wafers. Magnetron sputtering is a technique that uses a vacuum environment and the combined effects of an electric and magnetic field to bombard a target material with ionized inert gas ions. This causes the target material to be ejected as ions, atoms, or molecules, thus depositing a thin film on the wafer. Magnetron sputtering can be used to deposit thin films of metals such as aluminum, copper, gold, and platinum to create metal contacts and interconnects.

[0003] However, during magnetron sputtering deposition, the uneven distribution of the magnetic field in the reaction chamber will result in uneven plasma density, which in turn leads to different sputtering rates at different locations on the target. This can easily cause poor uniformity of the thin film deposited on the wafer, resulting in poor wafer processing uniformity.

[0004] Therefore, the related technology suffers from poor wafer processing uniformity. Summary of the Invention

[0005] The purpose of this application is to provide a semiconductor process equipment and a magnetic field control method for the semiconductor process equipment, which can solve the problem of poor wafer processing uniformity in related technologies.

[0006] In a first aspect, embodiments of this application provide a semiconductor process apparatus, the semiconductor process apparatus comprising: Reaction chamber; An upper electrode assembly is disposed at the top of the reaction chamber. The upper electrode assembly includes a rotatably disposed first magnetic mechanism, which includes a plurality of first electromagnetic components. A wafer carrier is disposed within the reaction chamber; A temperature detection assembly includes at least two wafer temperature detection elements spaced apart, each wafer temperature detection element being opposite to a different position of the wafer carrier, and the wafer carrier being opposite to the first magnetic mechanism; The control module is communicatively connected to the temperature detection component and the first electromagnetic component. The control module is used to determine the target adjustment position based on the detection signals of each of the wafer temperature detection elements, and adjust the current magnitude and / or direction of the first electromagnetic component corresponding to the target adjustment position.

[0007] Secondly, embodiments of this application also provide a magnetic field control method for semiconductor process equipment, applicable to the aforementioned semiconductor process equipment, the magnetic field control method comprising: Obtain the heating rates at at least two locations on the wafer; The target adjustment position of the wafer is determined based on the heating rate of each of the aforementioned positions, and the current magnitude and / or direction of the first electromagnetic component corresponding to the target adjustment position is adjusted.

[0008] In this embodiment, during the wafer fabrication process in semiconductor equipment, since the wafer temperature sensing elements are positioned opposite the wafer carrier, and the wafer carrier is positioned opposite the first magnetic mechanism, the temperature at different locations on the wafer can be detected by the wafer temperature sensing elements. Based on the detection signals from each wafer temperature sensing element, the target adjustment position of the wafer can be determined, and the current magnitude and / or direction of the first electromagnetic component corresponding to the target adjustment position can be adjusted, thereby adjusting the magnetic field strength corresponding to the target adjustment position. This configuration allows for automatic adjustment of the magnetic field strength distribution of the first magnetic mechanism based on the temperature at different locations on the wafer during the process, ensuring that the sputtering rate is the same at different locations on the target material. This results in uniform particle deposition on the wafer, enabling precise control of the film thickness on the wafer, ensuring consistent uniformity of the deposited film, and effectively improving the wafer processing uniformity. Attached Figure Description

[0009] Figure 1 This is one of the positional relationship diagrams of the wafer and temperature detection component disclosed in the embodiments of this application; Figure 2 This is the second diagram showing the positional relationship between the wafer and the temperature detection component disclosed in the embodiments of this application; Figure 3 This is a schematic diagram showing the distribution of each first magnetic region of the first magnetic mechanism disclosed in the embodiments of this application; Figure 4 This is a schematic diagram of the structure of the first electromagnetic component disclosed in the embodiments of this application; Figure 5 This is a perspective view of the first magnetic mechanism disclosed in the embodiments of this application; Figure 6 This is a schematic diagram of the structure of the semiconductor process equipment disclosed in the embodiments of this application; Figure 7 This is a schematic diagram of the magnetic field distribution of the first and second magnetic mechanisms disclosed in the embodiments of this application; Figure 8 This is a schematic flowchart of the magnetic field control method disclosed in the embodiments of this application; Figure 9 This is a schematic diagram of the process for obtaining the heating rate at at least two locations on a wafer, as disclosed in an embodiment of this application. Figure 10 This is a schematic diagram of the process for obtaining wafer emissivity disclosed in an embodiment of this application.

[0010] Explanation of reference numerals in the attached figures: 100 - Wafer; 200 - Wafer carrier; 300 - Temperature sensing component; 310 - Wafer temperature sensing element; 311 - First temperature sensing element; 312 - Second temperature sensing element; 313 - Third temperature sensing element; 320 - Emissivity detection element; 400 - First magnetic mechanism; 410 - First electromagnetic component; 411 - Permanent magnet; 412 - Current-carrying solenoid; 420 - First magnetic region; 421 - First region; 422 - Second zone; 423 - Third zone; 430 - Fixed plate; 440 - Rotary lifting device; 500 - Second magnetic mechanism; 510 - Second electromagnetic component; 520 - Second magnetic region; 521 - Fourth region; 522 - Fifth region; 523 - Sixth region; 600 - Target material; 700 - Reaction chamber. Detailed Implementation

[0011] The technical solutions of the embodiments of this application will be clearly described below with reference to the accompanying drawings. Obviously, the described embodiments are only some, not all, of the embodiments of this application. All other embodiments obtained by those skilled in the art based on the embodiments of this application are within the scope of protection of this application.

[0012] The terms "first," "second," etc., used in the specification and claims of this application are used to distinguish similar objects and not to describe a specific order or sequence. It should be understood that such use of data can be interchanged where appropriate so that embodiments of this application can be implemented in orders other than those illustrated or described herein, and the objects distinguished by "first," "second," etc., are generally of the same class and the number of objects is not limited; for example, a first object can be one or more. Furthermore, in the specification and claims, "and / or" indicates at least one of the connected objects, and the character " / " generally indicates that the preceding and following objects are in an "or" relationship.

[0013] The semiconductor process equipment and magnetic field control method for semiconductor process equipment provided in this application will be described in detail below with reference to the accompanying drawings, through specific embodiments and application scenarios.

[0014] refer to Figures 1-7The semiconductor process equipment provided in this application embodiment may include a reaction chamber 700, an upper electrode assembly, a wafer carrier 200, a temperature detection assembly 300, and a control module.

[0015] The upper electrode assembly can be disposed at the top of the reaction chamber 700, and the wafer carrier 200 can be disposed within the reaction chamber 700 to support the wafer 100. The wafer carrier 200 can serve as the lower electrode and be electrically connected to the radio frequency power supply, so that an electric field is formed between the lower electrode and the upper electrode assembly to ionize the process gas and form plasma. Furthermore, as... Figure 1 As shown, the upper electrode assembly may include a rotatably configured first magnetic mechanism 400, which may include multiple first electromagnetic components 410. A wafer carrier 200 is disposed opposite to the first magnetic mechanism 400, and a target material 600 is disposed between the first magnetic mechanism 400 and the wafer carrier 200. The target material 600 may be disposed on the top of the reaction chamber 700. Through the combined action of an electric field and a magnetic field, plasma bombards the target material 600, causing it to be ejected in the form of ions, atoms, or molecules, and fall onto the surface of the wafer 100, thereby forming a deposition film on the wafer 100. Here, because the first magnetic mechanism 400 is rotatably configured, it can drive the magnetic fields generated by the multiple first electromagnetic components 410 to perform circular motion, so that the magnetic fields generated by each first electromagnetic component 410 can correspond to different areas of the target material 600, thereby improving the uniformity of the magnetic field distribution within the reaction chamber 700.

[0016] Here, the first magnetic mechanism 400 may also include a rotary lifting device 440 and a fixed plate 430. Each first electromagnetic component 410 is disposed on the fixed plate 430. The rotary lifting device 440 is connected to the fixed plate 430 and can drive the fixed plate 430 to rotate and rise, so as to drive all the first electromagnetic components 410 to rotate and rise.

[0017] The wafer carrier 200 can be an electrostatic chuck, and the first magnetic mechanism 400 is located above the wafer carrier 200 and can be coaxially arranged with the wafer carrier 200. For example, the first magnetic mechanism 400 includes a first part, a second part, and a third part, which are distributed horizontally outward along the rotation center of the first magnetic mechanism 400. Each of the first, second, and third parts can include multiple first electromagnetic components 410. The first part can be disposed opposite to the center position of the wafer carrier 200, the second part can be disposed opposite to the second position of the wafer carrier 200, and the third part can be disposed opposite to the edge position of the wafer carrier 200. The second position of the wafer carrier 200 is located between the center position and the edge position of the wafer carrier 200. The center position of the wafer carrier 200 corresponds to the center position of the wafer 100 and is used to support the center position of the wafer 100. The second position of the wafer carrier 200 corresponds to the second position of the wafer 100 and is used to support the second position of the wafer 100. The edge position of the wafer carrier 200 corresponds to the edge position of the wafer 100 and is used to support the edge position of the wafer 100. The second position of the wafer 100 is the position between the center position and the edge position of the wafer 100.

[0018] The temperature detection assembly 300 may include at least two spaced-apart wafer temperature detection elements 310. Each wafer temperature detection element 310 may be opposite to different positions on the wafer carrier 200. Optionally, each wafer temperature detection element 310 may be located at different positions on the wafer carrier 200 so that each wafer temperature detection element 310 can be used to detect the temperature at different positions on the wafer 100. Here, since the wafer carrier 200 is opposite to the first magnetic mechanism 400, the wafer 100 may also be opposite to the first magnetic mechanism 400. The control module may be communicatively connected to the temperature detection assembly 300 and the first electromagnetic component 410. The control module may be used to determine the target adjustment position of the wafer 100 based on the detection signals of each wafer temperature detection element 310, and to adjust the current magnitude and / or direction of the first electromagnetic component 410 corresponding to the target adjustment position. This configuration allows for the automatic adjustment of the magnetic field strength distribution of the first magnetic mechanism 400 based on the temperature at different locations on the wafer 100 during the process. This ensures that the sputtering rate is the same at different locations on the target material 600, resulting in uniform particle deposition on the wafer 100. Consequently, precise control of the film thickness on the wafer 100 is achieved, ensuring consistent uniformity of the deposited film and effectively improving the processing uniformity of the wafer 100. Furthermore, by automatically adjusting the magnetic field strength of the first electromagnetic component 410 at each location, debugging time and processing costs can be effectively shortened, eliminating the need for repeated testing with a large number of wafers 100.

[0019] It should be noted that the heat of wafer 100 is generated by particle collisions. Therefore, the location with a relatively high heating rate indicates a higher number of particle collisions, suggesting a thicker deposited film at that location. When the heating rate is consistent across all locations on wafer 100, it indicates a consistent deposited film thickness. Thus, real-time temperature monitoring of wafer 100 allows for the real-time detection of differences in deposited film thickness at various locations.

[0020] In an optional embodiment, the first electromagnetic component 410 may include a permanent magnet 411 and an energized solenoid 412 sleeved outside the permanent magnet 411. The control module may be electrically connected to the energized solenoid 412 of each first electromagnetic component 410, and the control module may be a power control unit. It can regulate the magnetic field of the first electromagnetic component 410 by regulating the magnitude and / or direction of the current in the energized solenoid 412 of each first electromagnetic component 410.

[0021] Optionally, the multiple first electromagnetic components 410 located on the outer side can be connected to form a ring, thereby forming a ring magnetic field. When the first magnetic mechanism 400 rotates, the magnetic field strength of each first electromagnetic component 410 generating the ring magnetic field can be distributed more evenly, preventing situations where the magnetic field strength is locally strong or locally weak, thereby improving the processing uniformity of the wafer 100. For example, since particles tend to converge towards the center during deposition, the number of first electromagnetic components 410 can gradually increase in the horizontal direction outward from the center, thereby making the number of particles deposited on the wafer 100 more uniform.

[0022] In an optional embodiment of this application, the temperature detection component 300 may further include an emissivity detection element 320, which can be used to detect the wafer emissivity. Each wafer temperature detection element 310 can be used to detect the temperature at a corresponding location based on the wafer emissivity. This configuration allows for real-time detection of the wafer emissivity, improving its accuracy. Furthermore, by detecting the temperature at various locations on the wafer 100 based on the wafer emissivity, the detection accuracy of the wafer temperature detection element 310 is improved.

[0023] In other embodiments, the temperature detection component 300 may also exclude the emissivity detection element 320, and the user may manually set the wafer emissivity for each wafer temperature detection element 310.

[0024] Optionally, the wafer temperature sensing element 310 can be an infrared thermometer or temperature sensor, or other temperature sensing element; the emissivity sensing element 320 can be an infrared emissivity measuring instrument.

[0025] During the process, the emissivity detection element 320 can detect the wafer emissivity in real time and transmit the detection signal to the controller of each wafer temperature detection element 310. This allows the wafer temperature detection element 310 to measure the temperature at various locations on the wafer 100 based on the wafer emissivity. Each wafer temperature detection element 310 can transmit the detected temperature data to the control module. The control module determines the heating rate at each location based on the temperature data, i.e., it determines the temperature change at each location. Based on the temperature change at each location, it determines the target adjustment position and adjusts the current magnitude and / or direction of the first electromagnetic component 410 corresponding to the target adjustment position, thereby making the heating rate at each location approximately the same.

[0026] Optionally, each wafer temperature sensing element 310 and emissivity sensing element 320 can be disposed on the wafer carrier 200.

[0027] In optional embodiments, such as Figure 1 As shown, the emissivity detection element 320 and the wafer temperature detection element 310 can be arranged at intervals, and the emissivity detection element 320 can be opposite to a first position of the wafer carrier 200. The distance L3 between the first position and the center position of the wafer carrier 200 can be greater than or equal to three-tenths and less than or equal to seven-tenths of the wafer radius. This arrangement can improve the accuracy of the wafer emissivity detected by the emissivity detection element 320. Optionally, the distance L3 between the first position and the center position of the wafer carrier 200 can be half the wafer radius. This arrangement can make the wafer emissivity detected by the emissivity detection element 320 even more accurate.

[0028] Of course, the emissivity detection element 320 may not be spaced apart from the wafer temperature detection element 310, and the emissivity detection element 320 may be used to be opposite any position to the wafer carrier 200.

[0029] In some embodiments, the emissivity detection element 320 is mounted at the center, edge, first, third, and fourth positions of the wafer carrier 200, respectively, and the emissivity detection element 320 detects the wafer emissivity at each position of the wafer 100. Here, the distance between the third position and the center position of the wafer carrier 200 is one-third of the wafer radius, and the distance between the fourth position and the center position of the wafer carrier 200 is one-quarter of the wafer radius. Specifically, the wafer emissivity detected when the emissivity detection element 320 is opposite to the center position of the wafer carrier 200 is 0.259, the wafer emissivity detected when the emissivity detection element 320 is opposite to the edge position of the wafer carrier 200 is 0.250, the wafer emissivity detected when the emissivity detection element 320 is opposite to the first position of the wafer carrier 200 is 0.255, the wafer emissivity detected when the emissivity detection element 320 is opposite to the third position of the wafer carrier 200 is 0.253, and the wafer emissivity detected when the emissivity detection element 320 is opposite to the fourth position of the wafer carrier 200 is 0.252.

[0030] Temperature test paper is attached to the surface of wafer 100. The temperature of wafer 100 during the process is detected by the temperature test paper. The average emissivity of wafer 100 is calculated to be 0.255 based on the temperature value detected by the temperature test paper. Therefore, it can be seen that the wafer emissivity is most accurate when the emissivity detection element 320 is relative to the first position.

[0031] Optionally, each wafer temperature sensing element 310 can be located on the same straight line. This arrangement allows the measurement references of each wafer temperature sensing element 310 to be closer, thereby improving measurement accuracy.

[0032] Of course, to prevent the controllers of each wafer temperature sensing element 310 from contacting each other, each wafer temperature sensing element 310 may not be located on the same straight line.

[0033] In some embodiments, the temperature of wafer 100 is measured by using wafer temperature sensing element 310 based on the detection signal of emissivity sensing element 320, and the temperature of wafer 100 is measured by using temperature test paper. The two methods are compared to demonstrate that the temperature detected by using wafer temperature sensing element 310 based on the detection signal of emissivity sensing element 320 has higher accuracy.

[0034] Specifically, an aluminum film of 2 micrometers or a copper film of 5 micrometers is deposited on the surface of two wafers 100 of different thicknesses, respectively. The two wafers 100 of different thicknesses can be a first wafer and a second wafer, respectively. The thickness of the first wafer is 150 micrometers and the thickness of the second wafer is 775 micrometers.

[0035] Depositing aluminum film and copper film on the surface of the first wafer both require two processing stages and one cooling stage. Each processing stage takes 25.5 seconds, and the cooling stage takes 15 seconds. After the first processing stage, the first wafer is cooled down. After 15 seconds of cooling, the second processing stage begins, and the processing is completed after 25.5 seconds. After the first processing stage, the average temperature of the first wafer with deposited aluminum film measured by the wafer temperature sensing element 310 was 128.2℃. After the second processing stage, the average temperature of the first wafer with deposited aluminum film measured by the wafer temperature sensing element 310 was 209.5℃. After the second processing stage, the average temperature of the first wafer with deposited aluminum film measured by the temperature measuring paper was 210℃-216℃. Therefore, it can be seen that the temperature of the first wafer with deposited aluminum film measured by the wafer temperature sensing element 310 based on the detection signal of the emissivity sensing element 320 is close to the temperature of the first wafer with deposited aluminum film measured by the temperature measuring paper, indicating that the temperature of the first wafer with deposited aluminum film measured by the wafer temperature sensing element 310 based on the detection signal of the emissivity sensing element 320 is relatively accurate.

[0036] After the first processing stage, the average temperature of the first wafer with deposited copper film measured by the wafer temperature sensing element 310 was 71.2℃. After the second processing stage, the average temperature of the first wafer with deposited copper film measured by the wafer temperature sensing element 310 was 153.2℃. After the second processing stage, the average temperature of the first wafer with deposited copper film measured by the temperature measuring paper was 149℃-154℃. Therefore, it can be seen that the temperature of the first wafer with deposited copper film measured by the wafer temperature sensing element 310 based on the detection signal of the emissivity sensing element 320 is within the temperature range of the first wafer with deposited copper film measured by the temperature measuring paper. This indicates that the temperature of the first wafer with deposited copper film measured by the wafer temperature sensing element 310 based on the detection signal of the emissivity sensing element 320 is relatively accurate.

[0037] Depositing aluminum film and copper film on the back side of the second wafer both require three processing stages and one cooling stage. Each processing stage takes 17 seconds, and the cooling stage takes 15 seconds. After the first processing stage, the wafer enters the cooling stage to cool down for 15 seconds before entering the second processing stage, and then the third processing stage. After the first processing stage, the average temperature of the second wafer with deposited aluminum film measured by the wafer temperature sensing element 310 was 82.9℃. After the second processing stage, the average temperature of the second wafer with deposited aluminum film measured by the wafer temperature sensing element 310 was 140.2℃. After the third processing stage, the average temperature of the second wafer with deposited aluminum film measured by the wafer temperature sensing element 310 was 183.7℃. After the third processing stage, the average temperature of the second wafer with deposited aluminum film measured by the temperature measuring paper was 182℃-188℃. Therefore, it can be seen that the temperature of the second wafer with deposited aluminum film measured by the wafer temperature sensing element 310 based on the detection signal of the emissivity detection element 320 is within the temperature range of the second wafer with deposited aluminum film measured by the temperature measuring paper, indicating that the temperature of the second wafer with deposited aluminum film measured by the wafer temperature sensing element 310 based on the detection signal of the emissivity detection element 320 is relatively accurate.

[0038] After the first processing stage, the average temperature of the second wafer with deposited copper film measured by the wafer temperature sensing element 310 was 50℃. After the second processing stage, the average temperature of the second wafer with deposited copper film measured by the wafer temperature sensing element 310 was 90.2℃. After the third processing stage, the average temperature of the second wafer with deposited copper film measured by the wafer temperature sensing element 310 was 135.5℃. After the third processing stage, the average temperature of the first wafer with deposited copper film measured by the temperature measuring paper was 134℃-139℃. Therefore, it can be seen that the temperature of the second wafer with deposited copper film measured by the wafer temperature sensing element 310 based on the detection signal of the emissivity detection element 320 is within the temperature range of the second wafer with deposited copper film measured by the temperature measuring paper. This indicates that the temperature of the second wafer with deposited copper film measured by the wafer temperature sensing element 310 based on the detection signal of the emissivity detection element 320 is relatively accurate.

[0039] As can be seen from the above, the wafer temperature detection element 310 has a high accuracy in detecting the temperature of the wafer 100 based on the detection signal of the emissivity detection element 320.

[0040] In an optional embodiment of this application, the first magnetic mechanism 400 may have at least two first magnetic regions 420, each of which may be distributed outward from the rotation center of the first magnetic mechanism 400, and each of the first magnetic regions 420 may include at least one first electromagnetic component 410.

[0041] Each wafer temperature sensing element 310 corresponds to a first magnetic region 420. The control module can adjust the current magnitude and / or direction of the first electromagnetic component 410 in the first magnetic region 420 corresponding to the target adjustment position. This configuration allows the wafer temperature sensing element 310 to monitor temperature changes at different locations on the wafer 100 in real time, thereby precisely controlling the first electromagnetic component 410 in the corresponding region. This enables more accurate control of the magnetic field distribution, improving the processing uniformity of the wafer 100. It should be noted that the first electromagnetic components 410 within the same first magnetic region 420 have the same polarity and equal current magnitude.

[0042] In other embodiments, the first magnetic mechanism 400 may not have a first magnetic region 420, that is, the first magnetic mechanism 400 may not be partitioned.

[0043] In an optional embodiment, at least two first magnetic regions 420 may include a first region 421, a second region 422, and a third region 423. The first region 421 may be a circular region formed with the rotation center of the first magnetic mechanism 400 as the center and one-third of the rotation radius of the first magnetic mechanism 400 as the radius. The second region 422 and the third region 423 may both be annular regions. The inner edge of the second region 422 may coincide with the edge of the first region 421, and the radius of the outer edge of the second region 422 may be two-thirds of the rotation radius of the first magnetic mechanism 400. The inner edge of the third region 423 may coincide with the outer edge of the second region 422, and the radius of the outer edge of the third region 423 may be the rotation radius of the first magnetic mechanism 400.

[0044] At least two wafer temperature sensing elements 310 may include a first temperature sensing element 311, a second temperature sensing element 312, and a third temperature sensing element 313. The first temperature sensing element 311 may be opposite to the center position of the wafer carrier 200, the second temperature sensing element 312 may be opposite to a second position of the wafer carrier 200, and the distance L1 between the second position and the center position of the wafer carrier 200 may be half of the wafer radius. The third temperature sensing element 313 may be opposite to the edge position of the wafer carrier 200, and the distance L2 between the third temperature sensing element 313 and the center position of the wafer carrier 200 may be the wafer radius. Furthermore, the first temperature sensing element 311 may be opposite to a first region 421, the second temperature sensing element 312 may be opposite to a second region 422, and the third temperature sensing element 313 may be opposite to a third region 423.

[0045] This configuration allows the first magnetic mechanism 400 to be divided into three regions according to its rotation radius, with each first magnetic region 420 corresponding to a wafer temperature sensing element 310. This enables precise control of the magnetic field of each first magnetic region 420, thereby more accurately controlling the magnetic field of the first electromagnetic component 410 in each first magnetic region 420 and improving the processing uniformity of the wafer 100.

[0046] Furthermore, by arranging the first temperature sensing element 311, the second temperature sensing element 312, and the third temperature sensing element 313 at the center, second position, and edge position of the wafer carrier 200, respectively, compared to arranging the first temperature sensing element 311, the second temperature sensing element 312, and the third temperature sensing element 313 at any position of the wafer carrier 200 as described below, it can more comprehensively cover different positions of the wafer 100, thereby more accurately reflecting the overall temperature distribution of the wafer 100. In particular, when there is a significant temperature gradient on the wafer 100, this layout can capture these differences, making it easier for the control module to determine the target adjustment position of the wafer 100, thereby accurately adjusting the current magnitude and / or direction of the first electromagnetic component 410 corresponding to the target adjustment position.

[0047] Of course, the first region 421, the second region 422 and the third region 423 can also be any three regions of the first magnetic mechanism 400, and the first temperature sensing element 311, the second temperature sensing element 312 and the third temperature sensing element 313 can also be opposite to any three positions of the wafer carrier 200.

[0048] In optional embodiments of this application, such as Figure 6 As shown, the semiconductor process equipment may further include a second magnetic mechanism 500 disposed outside the reaction chamber 700. The second magnetic mechanism 500 can constrain the particles generated by the target material 600, allowing the particles to be deposited more uniformly on the wafer 100. The second magnetic mechanism 500 may have at least two second magnetic regions 520, each of which may be distributed sequentially from bottom to top. Each second magnetic region 520 may include at least one second electromagnetic component 510. This arrangement can generate multiple magnetic fields from bottom to top, and these multiple magnetic fields can more effectively constrain electrons within the reaction chamber 700, increasing the collision frequency between electrons and process gas molecules, thereby increasing plasma density and improving sputtering efficiency. In this embodiment, the second magnetic mechanism 500 may be disposed around the reaction chamber 700 to improve the magnetic field uniformity within the reaction chamber 700.

[0049] The control module can be used to adjust the magnitude and / or direction of the current in the second electromagnetic component 510 corresponding to the target adjustment position. This configuration allows for precise control of the magnetic field of the second electromagnetic component 510 at the target adjustment position, further optimizing the magnetic field distribution in the reaction chamber 700. This enables the thickening or thinning of the deposited film at the target adjustment position, resulting in a more uniform thickness of the deposited film on the wafer 100 and further improving the processing uniformity of the wafer 100.

[0050] In other embodiments, the semiconductor process equipment may not include the second magnetic mechanism 500, or the second magnetic mechanism 500 may have only one second magnetic region 520, and the second magnetic region 520 includes at least one permanent magnet, that is, the magnetic field of the second magnetic mechanism 500 cannot be adjusted.

[0051] In optional embodiments, such as Figure 6 As shown, at least two second magnetic regions 520 may include a fourth region 521, a fifth region 522, and a sixth region 523 distributed sequentially from bottom to top.

[0052] At least two wafer temperature sensing elements 310 may include a first temperature sensing element 311, a second temperature sensing element 312, and a third temperature sensing element 313. The first temperature sensing element 311 may be opposite to the center position of the wafer carrier 200 and is used to detect the temperature at the center position. The second temperature sensing element 312 may be opposite to a second position of the wafer carrier 200 and is used to detect the temperature at the second position. The distance L1 between the second position and the center position of the wafer carrier 200 may be half of the wafer radius. The third temperature sensing element 313 may be opposite to the edge position of the wafer carrier 200 and is used to detect the temperature at the edge position.

[0053] When the center position is determined as the target adjustment position, the control module is used to adjust the magnitude and / or direction of the current in the second electromagnetic component 510 of the fourth region 521.

[0054] When the second position is determined as the target adjustment position, the control module is used to adjust the magnitude and / or direction of the current in the second electromagnetic component 510 of the fifth region 522.

[0055] When the edge position is determined as the target adjustment position, the control module is used to adjust the magnitude and / or direction of the current in the second electromagnetic component 510 of the sixth region 523.

[0056] This configuration, by adjusting the second electromagnetic components 510 of the three second magnetic regions 520 one-to-one according to the heating rate of the three positions, allows for precise control of the magnetic field of each second magnetic region 520. This, in turn, enables more accurate control of the magnetic field of the second electromagnetic components 510 of each second magnetic region 520, thereby improving the processing uniformity of the wafer 100. Furthermore, compared to the method described below of indirectly adjusting the magnetic field strength at the second position by adjusting the magnitude and direction of the current of the second electromagnetic components 510 in the fourth region 521 and the sixth region 523, this configuration allows for more precise control of the magnetic field distribution within the reaction chamber 700, further enhancing the processing uniformity of the wafer 100.

[0057] It should be noted that as the particles move downwards onto the wafer 100, they sequentially pass through the magnetic fields formed by each of the second magnetic regions 520. During their downward movement, the particles are gradually moved towards the center of the reaction chamber 700 by the magnetic fields of each of the second magnetic regions 520, thus forming an inverted cone-shaped distribution as all particles move downwards. Specifically, during their downward movement, the particles first experience a horizontal Lorentz force in the magnetic field of the uppermost second magnetic region 520, moving a certain distance towards the center of the reaction chamber 700. Then, after passing through subsequent second magnetic regions 520, they continue to be moved towards the center of the reaction chamber 700 by the Lorentz force in the magnetic fields of those subsequent second magnetic regions 520. For example, when edge particles pass through the sixth region 523, the fifth region 522, and the fourth region 521 from top to bottom, the edge particles are first moved a predetermined distance towards the center of the reaction chamber 700 by a horizontal Lorentz force in the magnetic field of the sixth region 523, then moved a further predetermined distance towards the center of the reaction chamber 700 by a horizontal Lorentz force in the magnetic field of the fifth region 522, and finally moved another predetermined distance towards the center of the reaction chamber 700 by a horizontal Lorentz force in the magnetic field of the fourth region 521. That is, the edge particles can move three times the predetermined distance towards the center of the reaction chamber 700 before landing at the center of the wafer 100 during their fall. Therefore, to prevent the deposition film at the center of the wafer 100 from being too thick, the magnetic field strength and direction of the fourth region 521 can be controlled to make more particles move towards the second and edge positions, thereby reducing the number of particles landing at the center of the wafer 100. Similarly, when the thickness of the deposited film at the second position of wafer 100 is relatively thick, the magnetic field strength and direction of the fifth region 522 can be controlled to make more particles move towards the edge position, thereby reducing the number of particles falling on the second position of wafer 100; when the thickness of the deposited film at the edge position of wafer 100 is relatively thick, the magnetic field strength and direction of the sixth region 523 can be controlled to make some particles at the edge move towards the cavity wall of the reaction chamber 700 and fall on the cavity wall, thereby reducing the number of particles falling on the edge position of wafer 100. Therefore, when the center position is determined as the target adjustment position, the control module adjusts the current magnitude and / or direction of the second electromagnetic component 510 in the fourth region 521 to adjust the thickness of the deposited film at the center position of the wafer 100. When the second position is determined as the target adjustment position, the control module adjusts the current magnitude and / or direction of the second electromagnetic component 510 in the fifth region 522 to adjust the thickness of the deposited film at the second position of the wafer 100. When the edge position is determined as the target adjustment position, the control module adjusts the current magnitude and / or direction of the second electromagnetic component 510 in the sixth region 523 to adjust the thickness of the deposited film at the edge position of the wafer 100.Of course, the magnitude and / or direction of the current in the second electromagnetic component 510 of each second magnetic region 520 can also be adjusted simultaneously to make the thickness of the deposited film on the wafer 100 more uniform.

[0058] In other embodiments, the second magnetic mechanism 500 may also have only two second magnetic regions 520, which may correspond to the first temperature sensing element 311 and the third temperature sensing element 313, respectively. When the heating rate at the second position is greater than or less than the heating rate at the center position, and the heating rate at the second position is greater than or less than the heating rate at the edge position, the magnetic field strength corresponding to the second position can be indirectly adjusted by adjusting the current magnitude and / or direction of the second electromagnetic component 510 in the fourth region 521 and by adjusting the current magnitude and / or direction of the second electromagnetic component 510 in the sixth region 523. This makes the heating rate at the second position approximately the same as the heating rate at the center region and the heating rate at the edge position, thereby making the thickness of the deposited film at the second position approximately the same as the thickness of the deposited film at the center region and the thickness of the deposited film at the edge position.

[0059] Optionally, the second electromagnetic component 510 can be an electromagnet, and each second magnetic region 520 can include multiple second electromagnetic components 510, which can be distributed circumferentially along the reaction chamber 700.

[0060] Here, the second electromagnetic component 510 of each second magnetic region 520 can be connected to the reaction chamber 700 via a mounting bracket.

[0061] Based on the semiconductor process equipment provided in the embodiments of this application, the embodiments of this application also provide a magnetic field control method for semiconductor process equipment, applicable to the semiconductor process equipment described in any of the above embodiments, such as... Figure 8 As shown, the magnetic field control method may include the following steps: S20, Obtain the heating rate at at least two locations on wafer 100; S30. Determine the target adjustment position of the wafer 100 according to the heating rate at each position, and adjust the current magnitude and / or direction of the first electromagnetic component 410 corresponding to the target adjustment position.

[0062] The beneficial effects achieved by the magnetic field control method for semiconductor process equipment provided in this application embodiment are consistent with the beneficial effects achieved by the semiconductor process equipment provided in this application embodiment. By adjusting the distribution of the magnetic field strength of the first magnetic mechanism 400, the heating rate at each location of the wafer 100 is adjusted to be consistent, so that the thickness of the deposited film at each location of the wafer 100 is consistent. The specific details will not be elaborated here.

[0063] In an optional embodiment of this application, obtaining the heating rate at at least two locations on wafer 100 may include: The heating rates of the center position, the second position, and the edge position of the wafer 100 are obtained, and the distance between the second position and the center position of the wafer 100 is half the wafer radius.

[0064] In this way, by acquiring the heating rates at the center, second, and edge positions of wafer 100, compared to the method described below for acquiring the heating rates at any two positions of wafer 100, the heating rates at different positions of wafer 100 can be acquired more comprehensively. This allows for a more accurate reflection of the overall temperature distribution of wafer 100. In particular, when there is a significant temperature gradient on wafer 100, this layout can capture these differences, making it easier to determine the target adjustment position of wafer 100 and thus precisely adjust the current magnitude and / or direction of the first electromagnetic component 410 corresponding to the target adjustment position.

[0065] In other embodiments, obtaining the heating rate at at least two locations on wafer 100 may include: Obtain the heating rate at any two locations on wafer 100.

[0066] In an optional embodiment, determining the target adjustment position of the wafer 100 based on the heating rate at each location, and adjusting the magnitude and / or direction of the current in the first electromagnetic component 410 corresponding to the target adjustment position, may include the following steps: S31. When the heating rate at the center position is greater than or less than the heating rate at the second position, and the heating rate at the center position is greater than or less than the heating rate at the edge position, the center position is determined as the target adjustment position, and the current magnitude and / or direction of the first electromagnetic component 410 in the first region 421 corresponding to the center position is adjusted. Specifically, when the heating rate at the center position is greater than the heating rate at the second position and greater than the heating rate at the edge position, it indicates that the thickness of the deposited film at the center position is thicker. In this case, the center position is determined as the target adjustment position, and the current magnitude of the first electromagnetic component 410 in the first region 421 corresponding to the center position can be reduced to adjust the current magnitude of the first electromagnetic component 410 in the first region 421 corresponding to the center position. The magnetic field of the first region 421 is weakened, thereby reducing the downward Lorentz force on the particles above the center position, thus slowing down the falling speed of the particles above the center position, and thus reducing the number of particles falling at the center position; alternatively, the direction of the current of the first electromagnetic component 410 in the first region 421 corresponding to the center position can be changed to change the direction of the magnetic field of the first region 421 corresponding to the center position, so that the particles above the center position are subjected to an upward Lorentz force, thereby reducing the number of particles falling at the center position; of course, the magnitude of the current of the first electromagnetic component 410 in the first region 421 corresponding to the center position can also be reduced and its current direction can be changed at the same time. When the heating rate at the center is less than the heating rate at the second position and less than the heating rate at the edge position, it indicates that the thickness of the deposited film at the center is thinner. In this case, the center position is determined as the target adjustment position. The magnetic field of the first electromagnetic component 410 in the first region 421 corresponding to the center position is strengthened by increasing the current magnitude, thereby increasing the downward Lorentz force on the particles above the center position and accelerating the falling speed of the particles above the center position, thus increasing the number of particles falling at the center position. Alternatively, the direction of the current in the first electromagnetic component 410 in the first region 421 corresponding to the center position can be changed to change the direction of the magnetic field in the first region 421 corresponding to the center position, thereby increasing the downward Lorentz force on the particles above the center position and increasing the number of particles falling at the center position. Of course, the current magnitude and current direction of the first electromagnetic component 410 in the first region 421 corresponding to the center position can be increased simultaneously.

[0067] S32. When the heating rate at the second position is greater than or less than the heating rate at the center position, and the heating rate at the second position is greater than or less than the heating rate at the edge position, the second position is determined as the target adjustment position, and the current magnitude and / or direction of the first electromagnetic component 410 in the second region 422 corresponding to the second position is adjusted; specifically, when the heating rate at the second position is greater than the heating rate at the center position and greater than the heating rate at the edge position, it indicates that the thickness of the deposited film at the second position is relatively thick. In this case, the second position is determined as the target adjustment position, and the current magnitude of the first electromagnetic component 410 in the second region 422 corresponding to the second position can be reduced to adjust the heating rate at the second position. The magnetic field of the second region 422 is weakened, thereby reducing the downward Lorentz force on the particles above the second position, thus slowing down the falling speed of the particles above the second position and reducing the number of particles falling at the second position. Alternatively, the direction of the current in the first electromagnetic component 410 of the second region 422 corresponding to the second position can be changed to change the direction of the magnetic field in the second region 422 corresponding to the second position, so that the particles above the second position are subjected to an upward Lorentz force, thereby reducing the number of particles falling at the second position. Of course, the magnitude of the current in the first electromagnetic component 410 of the second region 422 corresponding to the second position can also be reduced and its current direction can be changed at the same time. When the heating rate at the second position is less than that at the center position and less than that at the edge position, it indicates that the thickness of the deposited film at the second position is relatively thin. In this case, the second position is determined as the target adjustment position. The magnetic field of the second region 422 corresponding to the second position is strengthened by increasing the current of the first electromagnetic component 410 of the second region 422 corresponding to the second position, thereby increasing the downward Lorentz force on the particles above the second position and accelerating the falling speed of the particles above the second position, thus increasing the number of particles falling at the second position. Alternatively, the direction of the current of the first electromagnetic component 410 of the second region 422 corresponding to the second position can be changed to change the direction of the magnetic field of the second region 422 corresponding to the second position, so that the particles above the second position are subjected to a downward Lorentz force, thereby increasing the number of particles falling at the second position. Of course, the current of the first electromagnetic component 410 of the second region 422 corresponding to the second position can be increased and its current direction can be changed simultaneously.

[0068] S33. When the heating rate at the edge position is greater than or less than the heating rate at the center position, and the heating rate at the edge position is greater than or less than the heating rate at the second position, the edge position is determined as the target adjustment position, and the current magnitude and / or direction of the first electromagnetic component 410 in the third region 423 corresponding to the edge position is adjusted; specifically, when the heating rate at the edge position is greater than the heating rate at the center position and greater than the heating rate at the second position, it indicates that the thickness of the deposited film at the edge position is thicker. In this case, the edge position is determined as the target adjustment position, and the current magnitude of the first electromagnetic component 410 in the third region 423 corresponding to the edge position is reduced to adjust the current magnitude of the first electromagnetic component 410 in the third region 423 corresponding to the edge position. The magnetic field of the third region 423 is weakened, so that the downward Lorentz force on the particles above the edge position is reduced, thereby slowing down the falling speed of the particles above the edge position, thus reducing the number of particles falling at the edge position; Alternatively, the direction of the current of the first electromagnetic component 410 of the third region 423 corresponding to the edge position can be changed to change the direction of the magnetic field of the third region 423 corresponding to the edge position, so that the particles above the edge position are subjected to an upward Lorentz force, thereby reducing the number of particles falling at the edge position; Of course, the magnitude of the current of the first electromagnetic component 410 of the third region 423 corresponding to the edge position can also be reduced and its current direction can be changed at the same time. When the heating rate at the edge is less than the heating rate at the center and less than the heating rate at the second position, it indicates that the thickness of the deposited film at the edge is thinner. In this case, the edge is determined as the target adjustment position. The magnetic field of the third region 423 corresponding to the edge can be strengthened by increasing the current of the first electromagnetic component 410 of the third region 423 corresponding to the edge, thereby increasing the downward Lorentz force on the particles above the edge and accelerating the falling speed of the particles above the edge, thus increasing the number of particles falling at the edge. Alternatively, the direction of the current of the first electromagnetic component 410 of the third region 423 corresponding to the edge can be changed to change the direction of the magnetic field of the third region 423 corresponding to the edge, causing the particles above the edge to experience a downward Lorentz force, thereby increasing the number of particles falling at the edge. Of course, the current of the first electromagnetic component 410 of the third region 423 corresponding to the edge can be increased and its current direction can be changed simultaneously.

[0069] The first region 421 is a circular region centered on the rotation center of the first magnetic mechanism 400 and with a radius equal to one-third of the rotation radius of the first magnetic mechanism 400. The inner edge of the second region 422 coincides with the edge of the first region 421, and the radius of the outer edge of the second region 422 is two-thirds of the rotation radius of the first magnetic mechanism 400. The inner edge of the third region 423 coincides with the outer edge of the second region 422, and the radius of the outer edge of the third region 423 is the rotation radius of the first magnetic mechanism 400.

[0070] In this way, the first magnetic mechanism 400 can be divided into three regions according to its rotation radius, and each region corresponds to a wafer temperature detection element 310. This allows for precise control of the magnetic field of each first magnetic region 420, thereby more accurately controlling the magnetic field of the first electromagnetic component 410 in each first magnetic region 420, which in turn helps to improve the processing uniformity of the wafer 100.

[0071] Of course, the first region 421, the second region 422 and the third region 423 can also be any three first magnetic regions 420 of the first magnetic mechanism 400.

[0072] In an optional embodiment of this application, the magnetic field control method may further include the following steps: S40. Adjust the magnitude and / or direction of the current in the second electromagnetic component 510 corresponding to the target adjustment position.

[0073] In this way, the magnetic field of the second electromagnetic component 510 corresponding to the target adjustment position can be precisely controlled to further optimize the magnetic field distribution in the reaction chamber 700. This allows for the thickening or thinning of the deposited film at the target adjustment position, ensuring a consistent heating rate across all locations on the wafer 100. Consequently, the thickness of the deposited film on the wafer 100 becomes more uniform, further improving the processing uniformity of the wafer 100.

[0074] In other embodiments, the magnetic field control method may not include step S40 described above.

[0075] In an optional embodiment, adjusting the magnitude and / or direction of the current in the second electromagnetic component 510 corresponding to the target adjustment position may include the following steps: S41. When the center position is the target adjustment position, adjust the magnitude and / or direction of the current of the second electromagnetic component 510 in the fourth region 521 corresponding to the center position. S42. When the second position is the target adjustment position, adjust the current magnitude and / or direction of the second electromagnetic component 510 in the fifth region 522 corresponding to the second position; S43. When the edge position is the target adjustment position, adjust the magnitude and / or direction of the current of the second electromagnetic component 510 in the sixth region 523 corresponding to the edge position; Among them, the fourth region 521, the fifth region 522, and the sixth region 523 are distributed from bottom to top.

[0076] In this way, the fourth region 521, the fifth region 522, and the sixth region 523 can be corresponding one-to-one with the center position, the second position, and the edge position. The magnetic field of each second magnetic region 520 can be more precisely controlled according to the temperature at each position, thereby allowing for more accurate adjustment of the thickness of the deposited film at each position. This is beneficial for more precisely improving the processing uniformity of the wafer 100. Furthermore, compared to the method described below of indirectly adjusting the magnetic field strength at the second position by adjusting the magnitude and direction of the current in the second electromagnetic components 510 of the fourth region 521 and the sixth region 523, this method allows for more precise control of the magnetic field distribution within the reaction chamber 700, further improving the processing uniformity of the wafer 100.

[0077] For example, when the heating rate at the center position is less than the heating rate at the second position and less than the heating rate at the edge position, the current of the second electromagnetic component 510 in the fourth region 521 is adjusted to increase the current of the second electromagnetic component 510 in the fourth region 521. The particles are more likely to move towards the center position under the influence of the magnetic field of the fourth region 521, thereby causing more particles to fall at the center position of the wafer 100.

[0078] When the heating rate at the second position is less than the heating rate at the center position and less than the heating rate at the edge position, the current of the second electromagnetic component 510 in the fifth region 522 is adjusted to increase the current of the second electromagnetic component 510 in the fifth region 522, thereby increasing the magnetic field strength of the fifth region 522. The particles are more likely to move to the second position under the influence of the magnetic field of the fifth region 522, thus causing more particles to fall at the second position of the wafer 100.

[0079] When the heating rate at the edge position is less than the heating rate at the center position and less than the heating rate at the second position, the current of the second electromagnetic component 510 in the sixth region 523 is adjusted to increase the current of the second electromagnetic component 510 in the sixth region 523, thereby increasing the magnetic field strength of the sixth region 523. The particles are more likely to move towards the edge position under the influence of the magnetic field of the sixth region 523, thus causing more particles to fall at the edge position of the wafer 100.

[0080] In other embodiments, the second magnetic mechanism 500 may also have only two second magnetic regions 520, for example, the two second magnetic regions 520 are a fourth region 521 and a sixth region 523. Furthermore, when the second position is the target adjustment position, the magnitude and / or direction of the current of the second electromagnetic component 510 of the second magnetic mechanism 500 may not be adjusted. Instead, the magnetic field strength corresponding to the second position can be indirectly adjusted by adjusting the magnitude and / or direction of the current of the second electromagnetic component 510 in the fourth region 521 and by adjusting the magnitude and / or direction of the current of the second electromagnetic component 510 in the sixth region 523. This makes the heating rate of the second position approximately the same as the heating rate of the central region and the heating rate of the edge position, thereby making the thickness of the deposited film at the second position approximately the same as the thickness of the deposited film in the central region and the thickness of the deposited film at the edge position.

[0081] In optional embodiments of this application, such as Figure 9 As shown, obtaining the heating rate at at least two locations on wafer 100 may include the following steps: S21. Obtain wafer emissivity; S22. Based on the wafer emissivity, the temperature of each location on wafer 100 within a preset time period is obtained; S24. Based on the temperature at each location within a preset time period, the heating rate at each location is calculated.

[0082] In this way, the wafer emissivity can be detected in real time to improve the accuracy of the wafer emissivity, and then the temperature at various locations on the wafer 100 can be detected based on the wafer emissivity, thereby improving the detection accuracy of the wafer temperature detection element 310.

[0083] In other embodiments, obtaining the heating rate at at least two locations of wafer 100 may not require omitting steps S21 and S22 described above.

[0084] Specifically, obtaining the heating rate at at least two locations on wafer 100 may include: The temperature at each location on wafer 100 within a preset time period is obtained; The heating rate at each location is determined based on the temperature at each location within a preset time period.

[0085] In optional embodiments, such as Figure 10 As shown, obtaining wafer emissivity may include the following steps: S211. Obtain the radiation energy values ​​of wafer 100 in at least two frequency bands; S212. The wafer emissivity is determined based on the maximum radiation energy value.

[0086] This can further improve the accuracy of the detected wafer emissivity.

[0087] Specifically, the emissivity of the wafer is detected using an emissivity detection element 320. Here, the emissivity detection element 320 can be an infrared emissivity meter. The infrared emissivity meter is set with at least two frequency bands, and the probe of the infrared emissivity meter can detect the radiation energy value of the wafer 100 at different frequency bands. Then, the radiation energy values ​​of the wafer 100 detected at each frequency band are compared to determine the frequency band corresponding to the maximum radiation energy value. The wafer emissivity is then obtained based on the maximum radiation energy value and its corresponding frequency band.

[0088] In this embodiment, the emissivity detection element 320 can be configured with three frequency bands, which can be 2.4 micrometers (μm), 3.3 micrometers and 5 micrometers respectively.

[0089] In other embodiments, obtaining wafer emissivity may not include the above steps, and obtaining wafer emissivity may include the following steps: Get the emission rate input by the user.

[0090] In an optional embodiment of this application, before obtaining the heating rate at at least two locations of wafer 100, such as Figure 8 As shown, the magnetic field control method may also include the following steps: S10. Obtain the temperature at at least two locations of the unprocessed test wafer located within the reaction chamber 700 to obtain the ambient temperature; Before determining the heating rate at each location based on the temperature at each location within a preset time period, such as... Figure 9 As shown, obtaining the heating rate at at least two locations on wafer 100 further includes the step of: S23, Filter out ambient temperature.

[0091] In this way, the ambient temperature can be filtered out during the actual process, thereby improving the accuracy of the heating rate of the obtained wafer 100, which in turn allows for more precise control of the magnetic field distribution within the reaction chamber 700.

[0092] Specifically, the test wafer is placed in the reaction chamber 700, and the magnetic structure of the semiconductor process equipment is removed to ensure that there is no magnetic field in the reaction chamber 700. Then, the environment in the reaction chamber 700 is made the same as the environment during the processing of the wafer 100, that is, except for the absence of a magnetic field, all other parameters are the same as those during the processing of the wafer 100. The test wafer is then subjected to processing and cooling stages in the reaction chamber 700, and the ambient temperature of the test wafer at each stage is obtained, and the change curve of the ambient temperature of the test wafer is obtained. Finally, the change curve of the ambient temperature of the test wafer is recorded in the control module.

[0093] During the actual process, the influence of the ambient temperature on the temperature of wafer 100 is filtered out by the control module, thereby ensuring the accuracy of the obtained heating rate of wafer 100.

[0094] In other embodiments, the magnetic field control method may not include step S10 described above.

[0095] The heating rate at at least two locations of wafer 100 can be obtained, or step S23 described above can be omitted.

[0096] The embodiments of this application have been described above with reference to the accompanying drawings. However, this application is not limited to the specific embodiments described above. The specific embodiments described above are merely illustrative and not restrictive. Those skilled in the art can make many other forms under the guidance of this application without departing from the spirit and scope of the claims, and all of these forms are within the protection scope of this application.

Claims

1. A semiconductor process apparatus, characterized in that, include: Reaction chamber (700); An upper electrode assembly is disposed on the top of the reaction chamber (700). The upper electrode assembly includes a rotatably disposed first magnetic mechanism (400), which includes a plurality of first electromagnetic components (410). A wafer carrier (200) is disposed within the reaction chamber (700); The temperature detection assembly (300) includes at least two wafer temperature detection elements (310) spaced apart, each of the wafer temperature detection elements (310) being opposite to a different position of the wafer carrier (200), and the wafer carrier (200) being opposite to the first magnetic mechanism (400); The control module is communicatively connected to the temperature detection component (300) and the first electromagnetic component (410). The control module is used to determine the target adjustment position based on the detection signal of each wafer temperature detection element (310) and adjust the current magnitude and / or direction of the first electromagnetic component (410) corresponding to the target adjustment position.

2. The semiconductor process equipment according to claim 1, characterized in that, The temperature detection component (300) further includes an emissivity detection element (320), which is used to detect the wafer emissivity, and each of the wafer temperature detection elements (310) is used to detect the temperature at the corresponding position based on the wafer emissivity.

3. The semiconductor process equipment according to claim 2, characterized in that, The emissivity detection element (320) is spaced apart from the wafer temperature detection element (310), and the emissivity detection element (320) is opposite to a first position of the wafer carrier (200). The distance between the first position and the center position of the wafer carrier (200) is greater than or equal to three-tenths of the wafer radius and less than or equal to seven-tenths of the wafer radius.

4. The semiconductor process equipment according to claim 1, characterized in that, All of the wafer temperature sensing elements (310) are located on the same straight line.

5. The semiconductor process equipment according to claim 1, characterized in that, The first magnetic mechanism (400) has at least two first magnetic regions (420), each of the first magnetic regions (420) is distributed outward from the rotation center of the first magnetic mechanism (400), and each of the first magnetic regions (420) includes at least one of the first electromagnetic components (410). Each of the wafer temperature sensing elements (310) corresponds to each of the first magnetic regions (420), and the control module is used to adjust the current magnitude and / or direction of the first electromagnetic component (410) of the first magnetic region (420) corresponding to the target adjustment position.

6. The semiconductor process equipment according to claim 5, characterized in that, The at least two first magnetic regions (420) include a first region (421), a second region (422), and a third region (423). The first region (421) is a circular region formed with the rotation center of the first magnetic mechanism (400) as the center and one-third of the rotation radius of the first magnetic mechanism (400) as the radius. The second region (422) and the third region (423) are both annular regions. The inner edge of the second region (422) coincides with the edge of the first region (421), and the radius of the outer edge of the second region (422) is two-thirds of the rotation radius of the first magnetic mechanism (400). The inner edge of the third region (423) coincides with the outer edge of the second region (422), and the radius of the outer edge of the third region (423) is the rotation radius of the first magnetic mechanism (400). The at least two wafer temperature sensing elements (310) include a first temperature sensing element (311), a second temperature sensing element (312), and a third temperature sensing element (313). The first temperature sensing element (311) is opposite to the center position of the wafer carrier (200), the second temperature sensing element (312) is opposite to a second position of the wafer carrier (200), the distance between the second position and the center position of the wafer carrier (200) is half the wafer radius, and the third temperature sensing element (313) is opposite to the edge position of the wafer carrier (200). The first temperature sensing element (311) is opposite to the first region (421), the second temperature sensing element (312) is opposite to the second region (422), and the third temperature sensing element (313) is opposite to the third region (423).

7. The semiconductor process equipment according to claim 1, characterized in that, The semiconductor process equipment also includes a second magnetic mechanism (500) disposed outside the reaction chamber (700). The second magnetic mechanism (500) has at least two second magnetic regions (520), each of the second magnetic regions (520) being distributed sequentially from bottom to top, and each of the second magnetic regions (520) including at least one second electromagnetic component (510). The control module is used to adjust the current magnitude and / or direction of the second electromagnetic component (510) corresponding to the target adjustment position.

8. The semiconductor process equipment according to claim 7, characterized in that, The at least two second magnetic regions (520) include a fourth region (521), a fifth region (522) and a sixth region (523) distributed from bottom to top. The at least two wafer temperature sensing elements (310) include a first temperature sensing element (311), a second temperature sensing element (312), and a third temperature sensing element (313). The first temperature sensing element (311) is opposite to the center position of the wafer carrier (200), the second temperature sensing element (312) is opposite to a second position of the wafer carrier (200), the distance between the second position and the center position of the wafer carrier (200) is half the wafer radius, and the third temperature sensing element (313) is opposite to the edge position of the wafer carrier (200). When the center position is determined to be the target adjustment position, the control module is used to adjust the current magnitude and / or direction of the second electromagnetic component (510) in the fourth region (521); When the second position is determined to be the target adjustment position, the control module is used to adjust the current magnitude and / or direction of the second electromagnetic component (510) in the fifth region (522); When the edge position is determined to be the target adjustment position, the control module is used to adjust the current magnitude and / or direction of the second electromagnetic component (510) in the sixth region (523).

9. A method for controlling the magnetic field of semiconductor process equipment, characterized in that, The magnetic field modulation method, applicable to the semiconductor process equipment according to any one of claims 1-8, comprises: Obtain the heating rates at at least two locations on the wafer (100); The target adjustment position of the wafer (100) is determined based on the heating rate of each of the positions, and the current magnitude and / or direction of the first electromagnetic component (410) corresponding to the target adjustment position is adjusted.

10. The magnetic field control method for semiconductor process equipment according to claim 9, characterized in that, The method of obtaining the heating rate at at least two locations on the wafer (100) includes: The heating rates of the center position, the second position and the edge position of the wafer (100) are obtained, wherein the distance between the second position and the center position of the wafer (100) is half the wafer radius.

11. The magnetic field control method for semiconductor process equipment according to claim 10, characterized in that, The step of determining the target adjustment position of the wafer (100) based on the heating rate at each of the aforementioned positions, and adjusting the current magnitude and / or direction of the first electromagnetic component (410) corresponding to the target adjustment position, includes: When the heating rate at the center position is greater than or less than the heating rate at the second position, and the heating rate at the center position is greater than or less than the heating rate at the edge position, the center position is determined as the target adjustment position, and the current magnitude and / or direction of the first electromagnetic component (410) in the first region (421) corresponding to the center position is adjusted. When the heating rate at the second position is greater than or less than the heating rate at the center position, and the heating rate at the second position is greater than or less than the heating rate at the edge position, the second position is determined as the target adjustment position, and the current magnitude and / or direction of the first electromagnetic component (410) in the second region (422) corresponding to the second position is adjusted. When the heating rate at the edge position is greater than or less than the heating rate at the center position, and the heating rate at the edge position is greater than or less than the temperature rise at the second position, the edge position is determined as the target adjustment position, and the current magnitude and / or direction of the first electromagnetic component (410) in the third region (423) corresponding to the edge position is adjusted. The first region (421) is a circular region formed with the rotation center of the first magnetic mechanism (400) as the center and one-third of the rotation radius of the first magnetic mechanism (400) as the radius. The inner edge of the second region (422) coincides with the edge of the first region (421), and the radius of the outer edge of the second region (422) is two-thirds of the rotation radius of the first magnetic mechanism (400). The inner edge of the third region (423) coincides with the outer edge of the second region (422), and the radius of the outer edge of the third region (423) is the rotation radius of the first magnetic mechanism (400).

12. The magnetic field control method for semiconductor process equipment according to claim 10, characterized in that, The magnetic field control method further includes: Adjust the magnitude and / or direction of the current in the second electromagnetic component (510) corresponding to the target adjustment position.

13. The magnetic field control method for semiconductor process equipment according to claim 12, characterized in that, Adjusting the magnitude and / or direction of the current in the second electromagnetic component (510) corresponding to the target adjustment position includes: When the center position is the target adjustment position, the current magnitude and / or direction of the second electromagnetic component (510) in the fourth region (521) corresponding to the center position are adjusted; When the second position is the target adjustment position, the current magnitude and / or direction of the second electromagnetic component (510) in the fifth region (522) corresponding to the second position are adjusted; When the edge position is the target adjustment position, adjust the current magnitude and / or direction of the second electromagnetic component (510) in the sixth region (523) corresponding to the edge position; The fourth region (521), the fifth region (522), and the sixth region (523) are distributed from bottom to top.

14. The magnetic field control method for semiconductor process equipment according to claim 9, characterized in that, The method of obtaining the heating rate at at least two locations on the wafer (100) includes: Obtain wafer emissivity; Based on the wafer emissivity, the temperature of each position of the wafer (100) within a preset time period is obtained; The heating rate of each location is determined based on the temperature at each location within the preset time period.

15. The magnetic field control method for semiconductor process equipment according to claim 14, characterized in that, The acquisition of wafer emissivity includes: Obtain the radiation energy values ​​of the wafer (100) in at least two frequency bands; The wafer emissivity is determined based on the maximum radiation energy value.

16. The magnetic field control method for semiconductor process equipment according to claim 14, characterized in that, Prior to obtaining the heating rates at at least two locations on the wafer (100), the magnetic field control method further includes: The temperature of at least two locations of an unprocessed test wafer located within the reaction chamber (700) is obtained to determine the ambient temperature; Before determining the heating rate of each of the locations based on the temperature within the preset time period, obtaining the heating rates of at least two locations on the wafer (100) further includes: The ambient temperature is filtered out.

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