Purging assembly and semiconductor thin film deposition apparatus

Abstract

The application discloses a kind of blowing assembly and semiconductor thin film deposition equipment, the blowing assembly is applied to the semiconductor thin film deposition equipment including reaction cavity and heating disc, heating disc is located in reaction cavity, the blowing assembly includes upper connector, lower connector, bellows and gas pipeline, upper connector and lower connector are connected to the axial two ends of bellows respectively, upper connector is used to be connected to the bottom of reaction cavity, bellows is communicated with the inside of reaction cavity.The blowing passage with gas inlet and gas outlet is opened in lower connector, gas outlet is communicated with the inside of bellows, gas inlet is communicated with gas pipeline.Swept gas that gas pipeline passes is swept to the inside of bellows and reaction cavity through blowing passage, to inhibit its accumulation in the heating disc below and in bellows from source, to block and flush the reactant and byproduct that spread downward, inhibit its accumulation in the heating disc below and in bellows, reduce particle pollution and improve product yield.

Description

Technical Field

[0001] This invention relates to the field of semiconductor technology, and in particular to a purging assembly and a semiconductor thin film deposition apparatus. Background Technology

[0002] In plasma-enhanced chemical vapor deposition (PECVD) systems, the heating plate serves as the substrate carrier for the lower electrode. During deposition, some reactants diffuse after radio frequency ionization, depositing at the bottom of the cavity below the heating plate and inside the bellows connecting to it, forming thin films or reaction byproducts that continuously accumulate. Simultaneously, cooling water flows through the bottom of the cavity, creating a low-temperature area where high-temperature reaction sources and byproducts readily adhere and remain. After deposition, remote plasma cleaning is typically used to clean the cavity walls. However, the activity of the ionized cleaning gas significantly decreases as it diffuses to the bottom of the cavity and the bellows area, failing to effectively remove the accumulated byproducts. This leads to the continuous accumulation of reactants and byproducts, becoming a source of particulate contamination. These contaminants then detach and contaminate the substrate in subsequent processes, affecting product yield. Furthermore, the buildup makes preventative maintenance difficult, shortens maintenance cycles, and limits the bellows' lifespan. Therefore, how to suppress the accumulation of reactants and byproducts in the area below the heating plate, reducing particulate contamination at its source, is a pressing technical problem in this field. Summary of the Invention

[0003] Embodiments of the present invention provide a purging assembly and a semiconductor thin film deposition apparatus, which aim to solve the problem that existing remote plasma cleaning cannot effectively remove byproducts that diffuse and accumulate at the bottom of the cavity below the heating plate and in the bellows, causing them to become a source of particulate pollution.

[0004] In a first aspect, the present invention provides a purging assembly applied to a semiconductor thin film deposition apparatus, the semiconductor thin film deposition apparatus including a reaction chamber and a heating plate, the heating plate being disposed in the reaction chamber, the purging assembly including: an upper connector, a lower connector, a bellows, and a gas pipeline, the upper connector and the lower connector being respectively connected to the axial ends of the bellows, the upper connector being used to connect to the bottom of the reaction chamber, the bellows communicating with the interior of the reaction chamber, the lower connector having a purging channel having an inlet and an outlet, the outlet of the purging channel communicating with the interior of the bellows, and the inlet of the purging channel communicating with the gas pipeline; The gas pipeline is used to introduce purge gas, so that the purge gas blows into the bellows and the interior of the reaction chamber through the purge channel.

[0005] Furthermore, the lower connector protrudes radially into the bellows and extends circumferentially along the bellows to form an annular platform, with the air outlet of the purging channel located on the annular platform.

[0006] Furthermore, the purging channel includes an annular cavity, which is opened circumferentially within the annular platform. The annular cavity is connected to the air inlet and the air outlet, respectively. The air outlet includes a plurality of purging holes, which are spaced apart circumferentially on the annular platform. Each purging hole is connected to the annular cavity.

[0007] Furthermore, the annular platform includes a stepped end face and a stepped wall face, the stepped end face being perpendicularly connected to the stepped wall face, the stepped end face being oriented towards the upper connector along the axial direction of the bellows, and the purging hole being opened on the stepped end face and communicating with the annular cavity along the axial direction of the bellows.

[0008] Furthermore, the purging channel includes an air intake channel extending radially along the annular platform, one end of which forms the air intake port and is connected to the gas pipeline, and the other end is connected to the annular cavity.

[0009] Furthermore, along the flow direction of the purge gas within the annular cavity, the number of purge holes in the region near the intake channel is less than the number of purge holes in the region far from the intake channel.

[0010] Furthermore, a heating element is provided on the gas pipeline for heating the purging gas.

[0011] Furthermore, the gas pipeline includes a flexible hose section and a rigid pipe section. One end of the flexible hose section is connected to the air inlet of the purging channel, and the other end of the flexible hose section is connected to one end of the rigid pipe section. The other end of the rigid pipe section is used to connect to the gas source of the purging gas, and the heating element is disposed on the rigid pipe section.

[0012] Furthermore, the heating element is a heating strip, which covers the outer periphery of the rigid pipe section.

[0013] In a second aspect, the present invention also provides a semiconductor thin film deposition apparatus, comprising: The reaction chamber has a heating plate mounting hole at its bottom; A heating plate includes a plate body and a plate handle. The plate body is disposed inside the reaction chamber, and the plate handle passes through the mounting hole of the heating plate and is connected to the plate body. The above-mentioned purging assembly has an upper connector that surrounds the heating plate mounting hole and is connected to the bottom of the reaction chamber, and a bellows sleeve that is fitted around the outer periphery of the plate handle, with the interior of the bellows communicating with the heating plate mounting hole. The purging gas introduced through the gas pipeline enters the interior of the bellows through the purging channel of the lower connector, and flows upward along the axial direction of the bellows through the heating plate mounting hole into the reaction chamber to purge the interior of the bellows and the area below the heating plate.

[0014] This invention provides a purging assembly and a semiconductor thin film deposition apparatus. Purging gas is introduced through a purging channel in a downward-connecting gas pipeline, allowing it to enter the bellows and flow upwards along its axial direction. The gas then passes through a heating plate mounting hole into the region below the heating plate within the reaction chamber, creating an upward-flowing purging airflow inside the bellows and at the bottom of the chamber below the heating plate. This purging airflow effectively suppresses the diffusion of reaction gases, intermediate products, and byproducts from the deposition process to the bottom of the chamber below the heating plate and inside the bellows. It also dilutes and removes byproducts entering this region, reducing their condensation, deposition, and accumulation at the relatively low temperature at the bottom of the chamber and within the bellows. This reduces byproduct residues that are difficult to remove effectively with remote plasma cleaning, decreases the risk of subsequent cracking or detachment of byproducts forming particulate contamination sources, and improves process stability and product yield. Attached Figure Description

[0015] To more clearly illustrate the technical solutions of the embodiments of the present invention, the drawings used in the following description of the embodiments will be briefly introduced. Obviously, the drawings described below are some embodiments of the present invention. For those skilled in the art, other drawings can be obtained based on these drawings without creative effort.

[0016] Figure 1 A cross-sectional schematic diagram of the purging assembly according to an embodiment of the present invention is shown; Figure 2 Showing Figure 1 Enlarged view of part A; Figure 3 A half-sectional schematic diagram of the purging assembly according to an embodiment of the present invention is shown; Figure 4 A top view schematic diagram of the purging assembly according to an embodiment of the present invention is shown; Figure 5 A schematic diagram of a semiconductor thin film deposition apparatus according to an embodiment of the present invention is shown; Figure label: 1. Upper connector; 2. Lower connector; 21. Annular platform; 211. Step end face; 212. Step wall; 22. Annular cavity; 23. Purge hole; 24. Air inlet channel; 3. Bellows; 4. Gas pipeline; 100. Purge assembly; 200. Heating plate; 201. Plate body; 202. Plate handle; 300. Reaction chamber; 301. Heating plate mounting hole. Detailed Implementation

[0017] The technical solutions of the embodiments of the present invention will be clearly and completely described below with reference to the accompanying drawings. Obviously, the described embodiments are only some, not all, of the embodiments of the present invention. Based on the embodiments of the present invention, all other embodiments obtained by those skilled in the art without creative effort are within the scope of protection of the present invention.

[0018] The directional terms used in this invention, such as "up," "down," "front," "back," "left," "right," "inner," "outer," and "side," are merely for reference to the accompanying drawings. Therefore, the directional terms used are for illustrating and understanding this invention, and not for limiting it. Furthermore, in the drawings, structures that are similar or identical are indicated by the same reference numerals.

[0019] In semiconductor thin film deposition processes, plasma-enhanced chemical vapor deposition (PECVD) equipment is a core process tool for preparing various functional thin films. The heating plate, acting as the lower electrode to support the substrate, directly impacts the quality and yield of the thin film deposition on the wafer surface due to the stability of the gas flow field within the chamber. During deposition, some reactants, after radio frequency ionization, diffuse downwards to the bottom of the chamber below the heating plate and into the bellows connecting to the heating plate, forming thin films or reaction byproducts that accumulate. Because cooling water flows through the bottom of the chamber, the temperature below the heating plate is low, making it easy for reactants and byproducts to condense and adhere. After deposition, remote plasma cleaning is typically used to clean the inner walls of the chamber. However, the activity of the ionized cleaning gas significantly decreases when it diffuses to the bottom of the chamber and the bellows area, failing to effectively remove the accumulated byproducts. This leads to the continuous accumulation of byproducts, becoming a source of particulate contamination, which detaches and contaminates the substrate in subsequent processes, affecting product yield. Furthermore, the accumulated deposits make preventative maintenance difficult, shorten maintenance cycles, and limit the lifespan of the bellows.

[0020] To address this, embodiments of the present invention provide a purging assembly and a semiconductor thin film deposition apparatus. By opening a purging channel communicating with the inside of a bellows on the lower connector, and continuously supplying purging gas into the purging channel through a gas pipeline, the purging gas flows upward from the inside of the bellows during the process, continuously purging the area inside the bellows and below the heating plate in the reaction chamber 300. This suppresses the diffusion and accumulation of reactants and byproducts in this area from the source, overcoming the problem that remote plasma cleaning cannot effectively remove byproducts in this area, causing them to become a source of particulate pollution.

[0021] To better understand the above technical solutions, the following will provide a detailed explanation of the technical solutions in conjunction with the accompanying drawings and specific implementation methods.

[0022] Reference Figures 1-5 This invention provides a purge assembly 100 for use in a semiconductor thin film deposition apparatus. The semiconductor thin film deposition apparatus includes a reaction chamber 300 and a heating plate 200, with the heating plate 200 disposed in the reaction chamber 300. The purge assembly 100 includes an upper connector 1, a lower connector 2, a bellows 3, and a gas pipeline 4. The upper connector 1 and the lower connector 2 are respectively connected to the axial ends of the bellows 3. The upper connector 1 is connected to the bottom of the reaction chamber 300, and the bellows 3 communicates with the interior of the reaction chamber 300. The lower connector 2 has a purge channel with an inlet and an outlet. The outlet of the purge channel communicates with the interior of the bellows 3, and the inlet of the purge channel communicates with the gas pipeline 4. The gas pipeline 4 is used to introduce purge gas so that the purge gas blows into the interior of the bellows 3 through the purge channel.

[0023] Specifically, the purging assembly 100 has an overall cylindrical structure extending along the axial direction, with the upper connector 1, bellows 3, and lower connector 2 connected sequentially from top to bottom. The upper connector 1 is an annular plate for fixed connection to the bottom of the reaction chamber 300; the lower connector 2 is also annular, with its outer edge sealed to the lower end of the bellows 3, and its inner edge forming a channel through which the handle 202 of the heating plate 200 passes. The bellows 3 is an annular corrugated cylinder that can expand and contract along the axial direction, fitted around the outer periphery of the handle 202, forming a sealed expansion space between the upper connector 1 and the lower connector 2. A purging channel is opened inside the lower connector 2, with the inlet of the purging channel connected to the gas pipeline 4 and the outlet connected to the interior of the bellows 3, so that the purging gas introduced through the gas pipeline 4 can be continuously delivered into the interior of the bellows 3 through the purging channel and flow to the reaction chamber 300. Both the upper connector 1 and the bellows 3, and the lower connector 2 and the bellows 3, can be connected by welding or bolting, which are suitable for scenarios requiring high sealing reliability and easy disassembly and maintenance, respectively. In the airflow path, the purge gas enters the purge channel from the gas pipeline 4 through the inlet, flows along the purge channel, and is then blown into the interior of the bellows 3 from the outlet. It then flows upwards along the axial direction of the bellows 3, continuously purging the inner wall of the bellows 3, the area below the heating plate 200, and the bottom area of ​​the reaction chamber 300.

[0024] Specifically, in existing semiconductor thin film deposition equipment, reactants and byproducts diffuse and accumulate at the bottom of the cavity below the heating plate 200 and inside the bellows 3. Post-process cleaning relies solely on remote plasma cleaning. However, the activity of the cleaning gas decreases significantly when it diffuses into this area, resulting in incomplete cleaning and continued accumulation of byproducts, becoming a source of particulate contamination. This embodiment addresses this by creating a purge channel on the lower connector 2 and connecting the gas pipeline 4 to the purge channel. This allows the purge gas to continuously enter the bellows 3 and flow towards the reaction cavity 300 during the process. On one hand, the continuous airflow prevents reactants and byproducts from diffusing into the bellows 3 and below the heating plate 200. On the other hand, it flushes and carries away the small amount of byproducts that have already entered the area, making it difficult for byproducts to accumulate inside the bellows 3 and below the heating plate 200, thus suppressing the formation of particulate contamination sources at the source. This structure reduces the risk of particles detaching and contaminating the substrate, improves product yield, reduces the difficulty of preventative maintenance cleaning, and extends the service life of the bellows 3.

[0025] Reference Figure 3 In this embodiment, the lower connector 2 protrudes radially into the interior of the bellows 3 and extends circumferentially along the bellows 3 to form an annular platform 21, and the air outlet of the purging channel is located on the annular platform 21.

[0026] Specifically, the purging assembly 100 has an overall cylindrical structure extending axially, with the upper connector 1, bellows 3, and lower connector 2 connected sequentially from top to bottom. The upper connector 1 is an annular plate for fixed connection to the bottom of the reaction chamber 300; the lower connector 2 is also annular, with its outer edge sealed to the lower end of the bellows 3, and its inner edge forming a channel through which the handle 202 of the heating plate 200 passes. The bellows 3 is an axially expandable annular corrugated cylinder, fitted around the outer periphery of the handle 202, forming a sealed expansion space between the upper connector 1 and the lower connector 2. The connection between the upper connector 1 and the bellows 3, as well as the connection between the lower connector 2 and the bellows 3, can both be achieved by welding or bolting, suitable for scenarios requiring high sealing reliability and those requiring easy disassembly and maintenance, respectively. A purge channel is formed inside the lower connector 2. The inlet of the purge channel is connected to the gas pipeline 4, and the outlet is connected to the interior of the bellows 3, so that the purge gas introduced into the gas pipeline 4 can be continuously sent into the interior of the bellows 3 through the purge channel. In this embodiment, the purge channel is an air passage that runs through the interior of the lower connector 2 along the direction of the purge gas flow from the inlet to the outlet. Its specific form can be various: In an optional embodiment, the purging channel can be a straight-through air passage formed by a channel opened in the lower connector 2, that is, one end of the channel forms an air inlet and the other end forms an air outlet. The purging gas is directly introduced into the interior of the bellows 3 through the channel. This form has a simple structure and is easy to process, and is suitable for working conditions with low requirements for purging uniformity. In another optional embodiment, the purging channel can also be a distribution air path including an air inlet channel 24, an annular cavity 22 and purging holes 23. That is, the purging gas enters the annular cavity 22 extending circumferentially through the radially extending air inlet channel 24, and is then distributed circumferentially by the annular cavity 22 to multiple purging holes 23 and blown upward. This form can achieve uniform distribution of purging gas in the circumferential direction inside the bellows 3, and is suitable for working conditions with high requirements for purging uniformity. For details of the specific structure, please refer to the description of the corresponding embodiment below. In another alternative embodiment, the purging channel may also be a slotted air passage including an air inlet channel 24 and an annular air outlet slit. The annular air outlet slit passes through the upper surface of the lower connector 2 in the annular direction and communicates with the air inlet channel 24. After the purging gas enters through the air inlet channel 24, it is continuously blown upward through the entire annular air outlet slit. This form provides continuous air outlet and complete coverage, and is suitable for working conditions that require a continuous air curtain. Furthermore, the air outlet of the purging channel can be oriented axially towards the bellows 3, or radially or obliquely towards the bellows 3, respectively suitable for scenarios requiring axial upward purging and scenarios requiring purging of the inner wall of the bellows 3. The air passages of each section of the purging channel can be formed by directly drilling holes and milling grooves on the lower connector 2 and then sealing them, or by embedding an air guide pipe or annular air pipe inside the lower connector 2 and then casting and welding it integrally with the lower connector 2, respectively suitable for different processing conditions and material selections. All of the above-mentioned forms of purging channels can introduce purging gas into the interior of the bellows 3 from the lower connector 2, realizing the purging function of the purging assembly 100 in this embodiment. Those skilled in the art can select a suitable purging channel form according to the size of the bellows 3, the purging gas volume, and uniformity requirements; no limitations are imposed here.

[0027] In the airflow path, the purge gas enters the inlet of the purge channel from the gas pipeline 4, flows along the purge channel and is then blown into the interior of the bellows 3 from the outlet, and flows upward along the axial direction of the bellows 3, forming a continuous purge on the inner wall of the bellows 3 and the area below the heating plate 200 in the reaction chamber 300.

[0028] Specifically, if the outlet of the purging channel is directly located on the side or bottom wall of the lower connector 2, the flow of the purging gas into the bellows 3 is chaotic, making it difficult to achieve uniform purging of the entire internal space of the bellows 3. The purging intensity is high near the outlet and weak in areas far from the outlet, and byproducts are still prone to accumulate in the weakly purged areas. In this embodiment, an annular platform 21 protruding into the bellows 3 and extending circumferentially is provided on the lower connector 2, and the outlet is located on the annular platform 21. The outlet expands circumferentially with the annular platform 21, and the purging gas blown upward from the annular platform 21 can uniformly cover the internal space of the bellows 3 circumferentially, avoiding purging dead zones. This structure can improve the circumferential uniformity of purging inside the bellows 3, making it difficult for byproducts to accumulate at any circumferential position, and further suppressing the formation of particulate pollution sources.

[0029] Reference Figure 2 and Figure 3 In this embodiment, the purging channel includes an annular cavity 22, which is opened in the annular platform 21 along the circumference of the platform. The annular cavity 22 is connected to the air inlet and the air outlet respectively. The air outlet includes a plurality of purging holes 23, which are opened at intervals along the circumference of the platform 21. Each purging hole 23 is connected to the annular cavity 22.

[0030] Specifically, the annular cavity 22 is an annular cavity formed inside the annular platform 21, extending continuously along the circumference of the annular platform 21 and connecting end to end, forming a circumferential distribution channel for the purge gas within the annular platform 21. Multiple purge holes 23 are spaced apart along the circumference of the annular platform 21 on its upper surface. Each purge hole 23 penetrates the annular platform 21 axially and communicates with the annular cavity 22. The outlet ends of each purge hole 23 collectively form the outlet of the purge channel. The cross-sectional shape of the purge holes 23 can be circular or oblong, suitable for applications requiring easier processing and larger outlet areas, respectively. The number of purge holes 23 can be determined based on the size of the bellows 3 and the purge gas volume requirements, for example, sixteen, twenty-four, or thirty-two, and is not limited here. In the airflow path, the purge gas enters the annular cavity 22 from the inlet, then splits and flows around the annular cavity 22 to both sides in the circumferential direction. During the flow, it enters each purge hole 23 and is finally blown out axially upward from each purge hole 23.

[0031] Specifically, if only a single or a few air outlets are provided, the purge gas is concentrated and blown out from a localized location. This results in significant differences in purge intensity across the circumferential region inside the bellows 3, with weak airflow in areas far from the outlets. Byproducts easily adhere and accumulate in these areas, leading to insufficient purge reliability. This embodiment addresses this by creating a circumferentially extending annular cavity 22 inside the annular platform 21, and then creating multiple purge holes 23 along the circumferential direction on the annular platform 21 that communicate with the annular cavity 22. The annular cavity 22 distributes the purge gas entering from the inlet circumferentially to each purge hole 23, allowing the purge gas to be dispersed and evenly blown into the bellows 3 through multiple purge holes 23, achieving uniform purge throughout the entire circumference. This structure significantly improves the uniformity of the purge airflow distribution along the circumference inside the bellows 3, eliminates purge dead zones, and ensures that the inner wall of the bellows 3 and the area below the heating plate 200 are adequately purged at all circumferential positions, further suppressing byproduct accumulation and the formation of particulate contaminants.

[0032] Reference Figure 3 In this embodiment, the annular platform 21 includes a stepped end face 211 and a stepped wall face 212. The stepped end face 211 and the stepped wall face 212 are perpendicularly connected. The stepped end face 211 faces the upper connector 1 along the axial direction of the bellows 3. The purge hole 23 is opened on the stepped end face 211 and communicates with the annular cavity 22 along the axial direction of the bellows 3.

[0033] Specifically, the annular platform 21 is generally stepped: the step end face 211 is a radially extending annular plane, and the step wall face 212 is an axially extending annular wall face. The two are perpendicularly connected, making the cross-section of the annular platform 21 L-shaped. The step end face 211 is oriented towards the upper connector 1, that is, towards the upper part of the bellows 3. The purge hole 23 is opened on the step end face 211 and penetrates the annular platform 21 and communicates with the annular cavity 22 axially, so that the airflow direction from the purge hole 23 is consistent with the axial direction of the bellows 3. In the airflow path, the purge gas is blown vertically upward from the purge hole 23 axially, and the airflow direction is opposite to the downward diffusion direction of the by-products, forming a frontal blockage against the downward diffusion of reactants and by-products.

[0034] Specifically, if the purge hole 23 is located on the radial or inclined wall of the annular platform 21, the purge gas will be blown out radially or obliquely. Part of the airflow will impact the inner wall of the bellows 3 or the handle 202 and then bend back, weakening the upward purge airflow intensity and easily creating turbulent vortices near the wall, thus creating conditions for the adhesion of byproducts. In this embodiment, by setting the annular platform 21 as a stepped structure and opening the purge hole 23 on the stepped end face 211 facing the upper connector 1, the purge gas is blown upward axially. The airflow direction is consistent with the axial direction of the bellows 3 and opposite to the diffusion direction of the byproducts. This allows for directional and concentrated upward purge of the inside of the bellows 3 and the area below the heating plate 200, while avoiding turbulence caused by airflow impacting the wall. This structure improves the directionality and effectiveness of the purge airflow and strengthens the blocking effect on the downward diffusion of reactants and byproducts.

[0035] Reference Figure 2 and Figure 3 In this embodiment, the purging channel includes an air intake channel 24 extending radially along the annular platform 21. One end of the air intake channel 24 forms an air inlet and is connected to the gas pipeline 4, while the other end is connected to the annular cavity 22.

[0036] Specifically, the air intake channel 24 is a straight hole channel opened in the lower connector 2, extending radially along the annular platform 21. Its radially outer end penetrates the outer wall of the lower connector 2 to form the air intake of the purge channel, used to connect with the gas pipeline 4; its radially inner end communicates with the annular cavity 22. The connection between the air intake channel 24 and the gas pipeline 4 can be achieved by using a quick-connect coupling or a flange connection, which are suitable for scenarios requiring quick disassembly and assembly and for maintenance spaces that are limited, respectively. In the airflow path, the purge gas enters the air intake channel 24 from the gas pipeline 4, flows radially inward, enters the annular cavity 22, and is then distributed to each purge hole 23 via the annular cavity 22.

[0037] Specifically, if the purge gas is blown directly into the pipe opening outside the bellows 3 without passing through the radially extending inlet channel 24, an air inlet needs to be opened on the expansion and contraction section of the bellows 3. Fatigue leakage is prone to occur at the inlet during the expansion and contraction of the bellows 3, resulting in poor sealing reliability. In this embodiment, the inlet channel 24 is opened on the lower connector 2, allowing the purge gas to enter the annular cavity 22 through the rigid lower connector 2. The inlet is located in a part that does not deform with the expansion and contraction of the bellows 3, avoiding the need for openings in the bellows 3 body and ensuring the sealing reliability of the inlet. Simultaneously, the radially extending inlet channel 24 allows the purge gas to be smoothly introduced into the annular cavity 22, reducing local flow resistance at the inlet. This structure ensures a long-term, stable, and leak-free passage of purge gas, improving the operational reliability of the purge assembly 100.

[0038] Reference Figure 4 In this embodiment, along the flow direction of the purge gas in the annular cavity 22, the number of purge holes 23 in the region near the air intake channel 24 is less than the number of purge holes 23 in the region far from the air intake channel 24.

[0039] Specifically, the multiple purge holes 23 are non-uniformly distributed circumferentially along the annular platform 21: starting from the connection between the intake channel 24 and the annular cavity 22, the purge gas flows circumferentially to both sides of the annular cavity 22. In the circumferential region near the intake channel 24, the number of purge holes 23 per unit circumferential length is relatively small; in the circumferential region far from the intake channel 24, the number of purge holes 23 per unit circumferential length is relatively large, and the number of purge holes 23 gradually increases along the gas flow direction. In the airflow path, the purge gas enters the annular cavity 22 from the intake channel 24 and flows circumferentially. The air pressure is higher in the near-end region and lower in the far-end region. The distribution of fewer holes in the near end and more holes in the far end makes the output volume of each purge hole 23 tend to be consistent.

[0040] Specifically, if the purge holes 23 are evenly distributed circumferentially, the purge gas flows circumferentially and is continuously split after entering the annular cavity 22 from the inlet channel 24. The purge holes 23 near the inlet channel 24 have a large output due to higher internal pressure, while those far from the inlet channel 24 have a small output due to lower internal pressure. This results in uneven circumferential gas output, insufficient purge intensity in the distal region, and byproducts easily accumulating there. This embodiment compensates for the pressure drop along the annular cavity 22 by reducing the number of purge holes 23 near the inlet channel 24 compared to those far from it, thus making the output of each purge hole 23 more consistent and achieving uniform circumferential gas output. This structure can significantly improve the uniformity of gas output from each purge hole 23 without increasing the supply pressure, ensuring consistent circumferential purge intensity inside the bellows 3 and further suppressing the formation of particulate pollution sources.

[0041] In one embodiment, a heating element is provided on the gas pipeline 4 for heating the purge gas.

[0042] Specifically, a heating element is installed on the gas pipeline 4 to heat the purge gas flowing through the gas pipeline 4, causing the purge gas to enter the purge channel at a temperature higher than ambient temperature and be blown into the bellows 3. The heating element can be a heating belt or a heating sleeve, which are suitable for scenarios where the pipeline routing is complex and requires flexible covering, and scenarios where the pipeline is a straight section and requires uniform heating, respectively. The heating temperature of the heating element can be set according to the type and flow rate of the purge gas, and is not limited here. In the airflow path, after the purge gas is heated by the heating element in the gas pipeline 4, it enters the bellows 3 in a heated state through the purge channel, purging the interior of the bellows 3 and the area below the heating plate 200.

[0043] Specifically, the bottom of the reaction chamber 300 is typically circulated with cooling water. The temperature at the bottom of the chamber below the heating plate 200 and in the area of ​​the bellows 3 is relatively low. High-temperature reaction sources and byproducts diffuse into this area and easily condense and accumulate. Furthermore, the purging temperature is further limited when room-temperature purge gas enters this low-temperature area, making it difficult to suppress the condensation and deposition of reaction sources. In this embodiment, a heating element is installed on the gas pipeline 4 to heat the purge gas. The heated purge gas, upon entering the interior of the bellows 3 and the area below the heating plate 200, raises the temperature level in this area, preventing the reaction sources and byproducts from condensing and adhering due to low temperatures. Simultaneously, the heated airflow has a better flushing and carrying effect on the already attached loose deposits. This structure further suppresses the condensation and deposition of byproducts inside the bellows 3 and below the heating plate 200, enhancing the suppression effect of the purging assembly 100 on particulate contaminants.

[0044] In one embodiment, the gas pipeline 4 includes a flexible hose section and a rigid pipe section. One end of the flexible hose section is connected to the air inlet of the purge channel, and the other end of the flexible hose section is connected to one end of the rigid pipe section. The other end of the rigid pipe section is used to connect to the purge gas source. A heating element (not shown in the figure) is provided on the rigid pipe section.

[0045] Specifically, the gas pipeline 4 includes a rigid pipe section and a flexible pipe section along the flow direction of the purging gas: the rigid pipe section is a rigid tube body, with its upstream end connected to the gas source and its downstream end connected to the flexible pipe section; the flexible pipe section is a flexible tube body that can be bent and deformed, with its end away from the rigid pipe section connected to the air inlet on the lower connector 2, that is, the gas pipeline 4 is connected to the purging assembly 100 through the flexible pipe section. A heating element is installed on the rigid pipe section to heat the purging gas; no heating element is installed on the flexible pipe section. Since the lower connector 2 moves up and down with the handle 202, the flexible pipe section can bend and expand and contract with the movement of the lower connector 2, compensating for the positional changes of the lower connector 2 during the movement. In the airflow path, after the purging gas is output from the gas source, it is first heated by the heating element in the rigid pipe section, then enters the air inlet of the lower connector 2 through the flexible pipe section, and then is blown into the bellows 3 through the purging channel.

[0046] Specifically, the heating plate 200 needs to move up and down during the process to pick up and put down the substrate. If the gas pipeline 4 connected to the lower connector 2 is a rigid pipe, it cannot move with the lower connector 2 when it moves up and down. This can cause leaks at the pipe joints or even pipe breakage at worst. If it is a flexible pipe, the flexible section is too long, the heating element is difficult to cover stably, and the heating effect of the purging gas is poor. In this embodiment, the gas pipeline 4 is set as a combination of rigid pipe section and flexible pipe section, and the heating element is set on the rigid pipe section. This ensures that the purging gas is stably and fully heated in the rigid pipe section, and the flexible pipe section adapts to the positional changes of the lower connector 2 during the lifting and lowering process, avoiding damage to the pipeline and joints due to stress, and ensuring the stability of the purging gas flow and pressure during the lifting and lowering process. This structure can take into account both the heating effect of the purging gas and the reliability of pipeline follow-up, so that the purging assembly 100 can still work stably when the heating plate 200 is lifting and lowering.

[0047] In one embodiment, the heating element is a heating band (not shown in the figure), which covers the outer periphery of the rigid pipe section.

[0048] Specifically, the heating element is an electric heating belt, which is spirally wound along the axial direction of the rigid pipe section or wrapped around the outer wall of the rigid pipe section circumferentially, and is in contact with the outer circumferential surface of the rigid pipe section. It heats the purge gas inside the rigid pipe section through heat conduction. The heating belt can be used in conjunction with a temperature control unit to maintain the temperature of the purge gas within a set range. In the airflow path, as the purge gas flows through the rigid pipe section covered by the heating belt, it continuously absorbs the heat transferred from the heating belt through the pipe wall. After its temperature rises, it enters the flexible hose section and is finally blown into the interior of the bellows 3.

[0049] Specifically, if the heating element heats the entire external space of the pipeline, heat loss is significant, heating efficiency is low, and it can easily cause thermal impacts on other components around the pipeline. This embodiment directly wraps the heating band around the outer periphery of the rigid pipe section, allowing heat to be directly conducted through the pipe wall to the purge gas inside the pipe. This results in a short heating path, high thermal efficiency, and controllable and stable purge gas temperature. Simultaneously, the heating range is concentrated within the rigid pipe section itself, minimizing thermal impact on surrounding components. This structure achieves stable heating of the purge gas at a relatively low cost, ensuring that the heated purge gas continuously suppresses the condensation and deposition of byproducts inside the bellows 3 and below the heating plate 200.

[0050] Reference Figures 1-5The present invention also provides a semiconductor thin film deposition apparatus, including a reaction chamber 300, a heating plate 200 and a purging assembly 100. The bottom of the reaction chamber 300 has a heating plate mounting hole 301. The heating plate 200 includes a plate body 201 and a plate handle 202. The plate body 201 is located inside the reaction chamber 300, and the plate handle 202 passes through the heating plate mounting hole 301 and is connected to the plate body 201. The purging assembly 100 is the purging assembly 100 of any of the above embodiments. The upper connector 1 surrounds the heating plate mounting hole 301 and is connected to the bottom of the reaction chamber 300. The bellows 3 is sleeved on the outer periphery of the plate handle 202, and the interior of the bellows 3 communicates with the heating plate mounting hole 301. The purging gas introduced through the gas pipeline 4 enters the interior of the bellows 3 through the purging channel of the lower connector 2, and flows upward along the axial direction of the bellows 3 through the heating plate mounting hole 301 into the reaction chamber 300 to purge the interior of the bellows 3 and the area below the heating plate 200. The purging assembly 100 has been described in detail in the above embodiments, and will not be repeated here for the sake of brevity.

[0051] Reference Figure 5 Specifically, the disk body 201 is disc-shaped and used to support the substrate. The upper end of the disk handle 202 is fixedly connected to the lower center of the disk body 201, and the lower end of the disk handle 202 extends through the heating disk mounting hole 301 to the lower part of the reaction chamber 300 and is connected to the lifting mechanism. The lifting mechanism drives the heating disk 200 to lift and lower to pick up and put down the substrate. The upper connecting piece 1 surrounds the heating disk mounting hole 301 and is sealed and fixed to the bottom of the reaction chamber 300. The lower connecting piece 2 is fixedly connected to the movable part that moves with the disk handle 202. When the heating disk 200 moves, the lower connecting piece 2 moves accordingly, and the bellows 3 expands and contracts accordingly, allowing the disk handle 202 to move while keeping the heating disk mounting hole 301 sealed. There is a gap between the inner edge of the annular platform 21 and the outer periphery of the disk handle 202. The two are spaced apart and do not contact each other, so there is no interference between the disk handle 202 and the annular platform 21 when the disk handle 202 moves. The purging gas can be an inert gas such as helium. Helium has stable chemical properties and will not react with reactants and byproducts. In the airflow path, the purge gas is output from the gas source, heated by the rigid pipe section and conveyed by the flexible pipe section, and then enters the annular cavity 22 through the inlet channel 24. It is then blown upward along the axial direction into the bellows 3 through each purge hole 23, and then enters the area below the heating plate 200 in the reaction chamber 300 through the heating plate mounting hole 301, and finally discharged with the tail gas of the reaction chamber 300.

[0052] Specifically, in existing semiconductor thin film deposition equipment, reactants and byproducts diffuse and accumulate at the bottom of the cavity below the heating plate 200 and inside the bellows 3. Removal relies solely on remote plasma cleaning, but the activity of the cleaning gas decreases significantly when it diffuses into this area, resulting in incomplete cleaning and continued accumulation of byproducts, becoming a source of particulate contamination. This embodiment addresses this by installing the aforementioned purge assembly 100 at the bottom of the reaction cavity 300. During the process, purge gas is continuously introduced into the bellows 3 and the area below the heating plate 200, forming an upward purge airflow. This airflow prevents reactants and byproducts from diffusing into this area and washes away any remaining byproducts, thus suppressing the formation of particulate contamination at its source. Simulation results show that when the purge gas flow rate is within the range of 0 to 1000 sccm, the pressure and flow field distribution in the reaction zone above the substrate remain essentially unchanged. The purge airflow effectively suppresses byproduct accumulation without interfering with the deposition process. Continuous wafer testing confirms that the bottom of the reaction cavity 300 remains clean and particle behavior is stable after applying the purge gas. This equipment structure can reduce particulate contamination, improve product yield, and at the same time reduce the difficulty of cleaning the bottom of the reaction chamber 300 and the bellows 3 during preventive maintenance, thus extending the service life of the bellows 3.

[0053] The above description is merely a specific embodiment of the present invention, but the scope of protection of the present invention is not limited thereto. Any person skilled in the art can easily conceive of various equivalent modifications or substitutions within the technical scope disclosed in the present invention, and these modifications or substitutions should all be covered within the scope of protection of the present invention. Therefore, the scope of protection of the present invention should be determined by the scope of the claims.

Claims

1. A purging assembly, characterized in that, This invention relates to a semiconductor thin film deposition apparatus, which includes a reaction chamber and a heating plate disposed within the reaction chamber. The purge assembly includes an upper connector, a lower connector, a bellows, and a gas pipeline. The upper connector and the lower connector are respectively connected to the axial ends of the bellows. The upper connector is connected to the bottom of the reaction chamber, and the bellows communicates with the interior of the reaction chamber. The lower connector has a purge channel with an inlet and an outlet. The outlet of the purge channel communicates with the interior of the bellows, and the inlet of the purge channel communicates with the gas pipeline. The gas pipeline is used to introduce purge gas, so that the purge gas blows into the bellows and the interior of the reaction chamber through the purge channel.

2. The purging assembly according to claim 1, characterized in that, The lower connector protrudes radially into the bellows and extends circumferentially along the bellows to form an annular platform, with the air outlet of the purging channel located on the annular platform.

3. The purging assembly according to claim 2, characterized in that, The purging channel includes an annular cavity, which is opened circumferentially within the annular platform. The annular cavity is connected to the air inlet and the air outlet, respectively. The air outlet includes multiple purging holes, which are spaced apart circumferentially on the annular platform. Each purging hole is connected to the annular cavity.

4. The purging assembly according to claim 3, characterized in that, The annular platform includes a stepped end face and a stepped wall face. The stepped end face is perpendicularly connected to the stepped wall face. The stepped end face faces the upper connector along the axial direction of the bellows. The purge hole is opened on the stepped end face and communicates with the annular cavity along the axial direction of the bellows.

5. The purging assembly according to claim 3, characterized in that, The purging channel includes an air intake channel extending radially along the annular platform. One end of the air intake channel forms the air inlet and is connected to the gas pipeline, while the other end is connected to the annular cavity.

6. The purging assembly according to claim 5, characterized in that, Along the flow direction of the purge gas within the annular cavity, the number of purge holes in the region near the intake channel is less than the number of purge holes in the region far from the intake channel.

7. The purging assembly according to claim 1, characterized in that, The gas pipeline is equipped with a heating element, which is used to heat the purging gas.

8. The purging assembly according to claim 7, characterized in that, The gas pipeline includes a flexible section and a rigid section. One end of the flexible section is connected to the air inlet of the purging channel, and the other end of the flexible section is connected to one end of the rigid section. The other end of the rigid section is used to connect to the gas source of the purging gas, and the heating element is disposed on the rigid section.

9. The purging assembly according to claim 8, characterized in that, The heating element is a heating strip, which covers the outer periphery of the rigid pipe section.

10. A semiconductor thin film deposition apparatus, characterized in that, include: The reaction chamber has a heating plate mounting hole at its bottom; A heating plate includes a plate body and a plate handle. The plate body is disposed inside the reaction chamber, and the plate handle passes through the mounting hole of the heating plate and is connected to the plate body. The purging assembly as described in any one of claims 1 to 9, wherein the upper connector is connected to the bottom of the reaction chamber around the heating plate mounting hole, and the bellows is sleeved on the outer periphery of the plate handle, and the interior of the bellows communicates with the heating plate mounting hole; The purging gas introduced through the gas pipeline enters the interior of the bellows through the purging channel of the lower connector, and flows upward along the axial direction of the bellows through the heating plate mounting hole into the reaction chamber to purge the interior of the bellows and the area below the heating plate.

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