Substrate processing method, method for manufacturing semiconductor device, program product, and substrate processing apparatus

Abstract

Provided is a substrate processing method, a semiconductor device manufacturing method, a program product, and a substrate processing apparatus, which can suppress the attachment of foreign matter such as particles to a substrate. The substrate processing method has a process a and a process b performed after the process a. The process a includes a process a1 of storing a processing gas obtained by phase changing a substance in a liquid phase or a solid phase in a storage section at a predetermined temperature, and a process a2 of supplying the processing gas stored in the storage section to a substrate. The process b includes a process b1 of supplying a purge gas to the storage section at a temperature higher than the predetermined temperature, and a process b2 of exhausting the purge gas in the storage section.

Description

Technical Field

[0001] This disclosure relates to a substrate processing method, a method for manufacturing a semiconductor device, a process product, and a substrate processing apparatus. Background Technology

[0002] As a step in the manufacturing process of a semiconductor device or a substrate processing process, sometimes a cycle is performed that includes supplying gas stored in a storage section (gas storage) to the substrate to form a film on the surface of the substrate (see, for example, Patent Document 1).

[0003] Patent Document 1: Japanese Patent Application Publication No. 2005-285922 Summary of the Invention

[0004] This disclosure provides a technique for suppressing the adhesion of foreign matter (particles) to a substrate.

[0005] According to one aspect of this disclosure, a technique is provided that includes a step a and a step b performed after step a.

[0006] The process a includes:

[0007] Step a1 involves storing the processed gas obtained by phase change of a liquid or solid substance in a storage compartment at a predetermined temperature; and

[0008] In step a2, the processing gas stored in the storage section is supplied to the substrate.

[0009] The process b includes:

[0010] Step b1 involves supplying purge gas to the storage section at a temperature higher than the predetermined temperature; and

[0011] Step b2 involves venting the purging gas from the storage section.

[0012] According to this disclosure, it is possible to suppress the adhesion of foreign matter (particles) to the substrate. Attached Figure Description

[0013] Figure 1 This is a schematic structural diagram of a substrate processing apparatus preferably used in one embodiment of the present disclosure, and is a diagram showing the processing furnace portion in a longitudinal sectional view.

[0014] Figure 2 This is a schematic structural diagram of the controller of a substrate processing apparatus preferably used in one aspect of this disclosure, and is a diagram of the control system of the controller represented by a block diagram.

[0015] Figure 3A This is a flowchart illustrating the processing steps in one embodiment of this disclosure.

[0016] Figure 3B This is a flowchart illustrating the substrate processing steps in one embodiment of the present disclosure.

[0017] Figure 3C This is a flowchart illustrating the process of the first processing gas supply step in one aspect of this disclosure.

[0018] Figure 4A This is a flowchart illustrating the process of removing attachments in one embodiment of this disclosure.

[0019] Figure 4B This is a flowchart illustrating the tank purging process in one embodiment of this disclosure.

[0020] Figure 5 This is a schematic diagram showing the structure of a first processing gas supply system and its surroundings in one embodiment of the present disclosure. Detailed Implementation

[0021] <One way this disclosure>

[0022] The following is mainly based on Figure 1 , Figure 2 , Figures 3A-3C as well as Figure 4A , Figure 4B as well as Figure 5 One aspect of this disclosure will be described. Furthermore, the accompanying drawings used in the following description are schematic, and the dimensional relationships and ratios of the elements shown may not necessarily correspond to reality. Additionally, the dimensional relationships and ratios of the elements may not be consistent across different drawings.

[0023] (1) Structure of the substrate processing device

[0024] like Figure 1 As shown, the processing furnace 202 has a heater 207 as a heating system (temperature adjustment unit). A reaction tube 203 is arranged concentrically with the heater 207 inside the heater 207. The reaction tube 203 is formed into a cylindrical shape with a closed upper end and an open lower end. A manifold 209 is arranged concentrically with the reaction tube 203 below the reaction tube 203. An O-ring 220a, serving as a sealing member, is provided between the manifold 209 and the reaction tube 203. The processing container (reaction container) is mainly composed of the reaction tube 203 and the manifold 209. A processing chamber 201, serving as a processing space, is formed in the hollow portion of the processing container. The processing chamber 201 is configured to accommodate a wafer 200, which serves as a substrate. The wafer 200 is disposed inside the processing chamber 201, and the wafer 200 is processed.

[0025] Nozzles 249a and 249b are installed inside the processing chamber 201, passing through the side wall of the manifold 209. Gas supply pipes (pipelines) 232a and 232b are respectively connected to nozzles 249a and 249b.

[0026] In the annular space between the inner wall of the reaction tube 203 and the wafer 200 (viewed from above), nozzles 249a and 249b are respectively arranged in an upward manner from the lower part of the inner wall of the reaction tube 203 towards the loading direction of the wafer 200. Gas supply holes 250a and 250b, serving as gas supply ports, are respectively provided on the sides of the nozzles 249a and 249b. A plurality of gas supply holes 250a and 250b are provided from the lower part to the upper part of the reaction tube 203.

[0027] A sealing cap 219 is provided below the manifold 209 to airtightly seal the lower opening of the manifold 209. An O-ring 220b, serving as a sealing component, is provided on the upper surface of the sealing cap 219 and abuts against the lower end of the manifold 209. A rotation mechanism 267 is provided below the sealing cap 219, which rotates the crystal boat 217 (described later) and the wafer 200 supported on the crystal boat 217 via a rotation shaft 255. The crystal boat lift 115 is configured as a conveying device (conveyor mechanism) that moves the crystal boat 217 and the wafer 200 into and out of the processing chamber 201 by raising and lowering the sealing cap 219.

[0028] The wafer boat 217, serving as a substrate support, is configured to support multiple wafers 200, for example, 25 to 200 wafers 200 arranged in a horizontal position with their centers aligned in the vertical direction. A heat insulation plate 218 is supported in multiple layers at the bottom of the wafer boat 217. Furthermore, the expression "25 to 200 wafers" in this specification refers to the inclusion of both the lower and upper limits within that range. Therefore, for example, "25 to 200 wafers" means "more than 25 wafers and less than 200 wafers." The same applies to other numerical ranges.

[0029] A temperature sensor 263, which functions as a temperature detector, is installed inside the reaction tube 203. By adjusting the power supply to the heater 207 based on the temperature information detected by the temperature sensor 263, the temperature inside the processing chamber 201 is adjusted to achieve the desired temperature distribution.

[0030] Next, the gas supply system and exhaust system will be described in detail.

[0031] like Figure 5As shown, on the gas supply pipe 232a, from upstream, are arranged a first supply source 301 as a processing gas supply source, a valve 303 as an on / off valve, a mass flow controller (MFC) 241a as a flow controller (flow control unit), a valve 304, a tank 300 as an example of a storage unit for storing gas internally, a pressure sensor 302 as a pressure gauge for measuring pressure, and a valve 243a. The storage unit may also be configured as a spiral pipe, etc. The pressure sensor 302 is configured to detect the pressure inside the gas supply pipe 232a between the tank 300 and the valve 243a. A valve 305 is provided on the pressure sensor 302 to cut off and open the flow of gas into the pressure sensor 302.

[0032] The storage section can also be configured as a spiral piping, etc. Alternatively, the tank 300 can be omitted, and the area between valves 304, 243a, 243d, and 309 in the gas supply pipes 232a and 232d and the gas exhaust pipe 308 can be regarded as the storage section, where gas is stored. The tank 300 is preferably configured such that the volume per unit length is greater than the flow path connected to the tank 300 (in this embodiment, the gas supply pipes 232a and 232d and the gas exhaust pipe 308).

[0033] As the first processing gas, the first supply source 301 supplies a gas that may change phase to a liquid or solid phase due to a decrease in temperature before being supplied into the processing chamber 201. For example, the first processing gas is a gas obtained by causing a liquid or solid phase to change phase at room temperature and pressure. The first processing gas is, for example, a raw material gas, and is one of the processing gases that exhibit a chemical effect on the wafer 200 or within the processing chamber 201. Furthermore, the first supply source 301 can be a vaporizer or the like, or it can be an inlet for the first processing gas supplied from outside the substrate processing apparatus.

[0034] A gas supply pipe 232c is connected between valve 303 of gas supply pipe 232a and MFC 241a. A gas supply pipe 232d is connected between valve 304 of gas supply pipe 232a and tank 300. On gas supply pipe 232c, a second supply source 306, MFC 241c, and valve 243c are sequentially arranged from upstream. On gas supply pipe 232d, a third supply source 307, a heater 324 (serving as a gas heating unit for heating the gas passing through), MFC 241d, and valve 243d are sequentially arranged from upstream. Alternatively, a heater for regulating the temperature of the area between the third supply source 307 and valve 243d in gas supply pipe 232d can be provided, or the heater 324 can be replaced.

[0035] The second supply source 306 and the third supply source 307 are gas sources for supplying inert gas. The second supply source 306 and the third supply source 307 can also be shared. The inert gas supplied from the second supply source 306 and the third supply source 307 functions as a purge gas or a carrier gas for the first processing gas in the substrate processing step described later. Furthermore, in step S6 described later, it functions as a purge gas to remove gases and particles present in the gas supply pipe 232a, MFC 241a, tank 300, pressure sensor 302, etc. Therefore, at least one of the second supply source 306 and the third supply source 307 can be considered as a purge gas supply source.

[0036] A gas exhaust pipe 308 is connected between the tank 300 of the gas supply pipe 232a and the valve 243a. A valve 309 is provided on the gas exhaust pipe 308. The downstream end of the gas exhaust pipe 308 is connected to the exhaust pipe 231, which will be described later. The gas exhaust pipe 308 is configured such that, by opening and closing the valve 309, the gas in the gas supply pipe 232a can be discharged to the outside of the processing chamber 201 through a path that does not pass through the processing chamber 201.

[0037] The first processing gas supply system (also known as the raw material gas supply system) mainly consists of gas supply pipe 232a, valve 303, MFC 241a, valve 304, tank 300, and valve 243a. Alternatively, the first supply source 301, pressure sensor 302, and valve 305 can be included in the first processing gas supply system. Furthermore, the first inert gas supply system mainly consists of gas supply pipe 232c, valve 241c, and valve 243c. The second inert gas supply system can also be included in the first inert gas supply system. The second inert gas supply system mainly consists of gas supply pipe 232d, heater 324, valve 241d, and valve 243d. The third supply source 307 can also be included in the second inert gas supply system. Alternatively, the first and second inert gas supply systems can be referred to as the inert gas supply system. The first processing gas supply system can also include the inert gas supply system. Finally, the first processing gas exhaust system mainly consists of gas exhaust pipe 308 and valve 309. The first processing gas exhaust system can also be included in the first processing gas supply system. The first processing gas supply system can be configured to control the flow of gas between the first supply source, the second supply source, the third supply source, the processing chamber 201, the exhaust system, and the tank 300. Furthermore, at least one of the first and second processing gas supply systems can be simply referred to as the processing gas supply system.

[0038] The tank 300 is equipped with a heater 320 as a first heating unit for heating the tank 300 and a temperature sensor 321 as a temperature measuring unit (temperature measuring device) for measuring the temperature of the tank 300. Additionally, in the interval between the gas supply pipes 232a and 232d, valves 304 and 243d, and the tank 300 (hereinafter referred to as the first storage interval), a second heating unit, namely heater 322a, for heating the first storage interval, and a temperature measuring unit, namely temperature sensor 323a, for measuring the temperature of the first storage interval, are provided. Furthermore, in the interval between the gas supply pipe 232a, the piping connecting the gas supply pipe 232a to the pressure sensor 302, and the gas exhaust pipe 308, the tank 300, pressure sensor 302, valves 243a and 309 (hereinafter referred to as the second storage interval), a third heating unit, namely heater 322b, for heating the second storage interval, and a temperature measuring unit, namely temperature sensor 323b, for measuring the temperature of the second storage interval, are provided. Hereinafter, the first storage zone, tank 300, and second storage zone will be collectively referred to as the storage zone. In addition, a fourth heating unit, namely heater 322c, for heating the supply zone and a temperature measuring unit, namely temperature sensor 323c, for measuring the temperature of the supply zone are provided in the interval between the first supply source 301 and valves 304 and 243c in gas supply pipes 232a and 232c.

[0039] A first temperature control system, primarily composed of heater 320, controls the temperature of tank 300. Temperature sensor 321 may be included in the first temperature control system. A second temperature control system, primarily composed of heaters 322a and 322b, controls the temperature of the storage area. Temperature sensors 323a and 323b may also be included in the second temperature control system. A third temperature control system, primarily composed of heater 322c, controls the temperature of the supply area. Temperature sensor 323c may also be included in the third temperature control system.

[0040] The first processing gas supply system, the first inert gas supply system, and the first processing gas exhaust system may also include heaters and temperature sensors (not shown). Heaters 320, 322a-322c, 324, and the heaters (not shown), and temperature sensors 321, 323a-323c, and the temperature sensor (not shown) may also be part of at least one of the first processing gas supply system, the first inert gas supply system, and the first processing gas exhaust system.

[0041] like Figure 1 As shown, a fourth supply source 310, an MFC 241b, and a valve 243b are sequentially arranged on the gas supply pipe 232b from the upstream direction.

[0042] The fourth supply source 310 is a gas source used to supply the second processing gas. The second processing gas is a reactant gas or a modified gas that reacts with the first processing gas, and is one of the processing gases.

[0043] A gas supply pipe 232e is connected downstream of valve 243b in gas supply pipe 232b. A fifth supply source 311, MFC 241e and valve 243e are sequentially arranged on gas supply pipe 232e from upstream.

[0044] The fifth supply source 311 is a gas source for supplying inert gas. The inert gas supplied from the fifth supply source 311 functions as a purge gas or a carrier gas for the second processing gas in the substrate processing process described later.

[0045] The second processing gas supply system (also known as the reaction gas supply system or modified gas supply system) mainly consists of gas supply pipe 232b, MFC 241b, and valve 243b. A fourth supply source 310 can also be included in the second processing gas supply system. Furthermore, the third inert gas supply system mainly consists of gas supply pipe 232e, MFC 241e, and valve 243e. A fifth supply source 311 can also be included in the third inert gas supply system. Alternatively, the third inert gas supply system can be included within the second processing gas supply system.

[0046] An exhaust pipe 231 is provided in the reaction tube 203 to exhaust the atmosphere inside the processing chamber 201. A vacuum pump 246, serving as a vacuum exhaust device, is connected to the exhaust pipe 231 via a pressure sensor 245 (a pressure detector, or pressure detection unit) and an APC (Auto Pressure Controller) valve 244 (a pressure regulator, or pressure adjustment unit). The APC valve 244 can perform vacuum exhaust and stop vacuum exhaust within the processing chamber 201 by opening and closing the valve while the vacuum pump 246 is operating. Furthermore, while the vacuum pump 246 is operating, the valve opening is adjusted based on the pressure information detected by the pressure sensor 245, thereby adjusting the pressure inside the processing chamber 201. The exhaust system mainly consists of the exhaust pipe 231, the APC valve 244, and the pressure sensor 245. Alternatively, the vacuum pump 246 can be included in the exhaust system.

[0047] The aforementioned gas exhaust pipe 308 is connected between the APC valve 244 of the exhaust pipe 231 and the vacuum pump 246. The gas exhaust pipe 308 can perform vacuum exhaust and stop vacuum exhaust within the gas supply pipe 232a by opening and closing valve 309 while the vacuum pump 246 is operating with the APC valve 244 closed. Furthermore, the configuration allows for adjusting the valve opening of valve 309 based on pressure information detected by pressure sensor 302 when the vacuum pump 246 is operating, thereby adjusting the pressure within the gas supply pipe 232a.

[0048] like Figure 2 As shown, the controller 121, serving as the control unit (control unit), is configured as a computer equipped with a CPU (Central Processing Unit) 121a, RAM (Random Access Memory) 121b, storage device 121c, and I / O port 121d. The RAM 121b, storage device 121c, and I / O port 121d are configured to exchange data with the CPU 121a via an internal bus 121e. An input / output device 122, such as a touch panel, is connected to the controller 121.

[0049] The storage device 121c is composed of, for example, flash memory, HDD (Hard Disk Drive), SSD (Solid State Drive), etc. The storage device 121c records and stores, in a readable manner, a control program that controls the operation of the substrate processing apparatus, and a process flow that describes the sequence or conditions of the film deposition process described later. The process flow functions as a program, which is a combination of methods that causes the controller 121 to execute each sequence of the film deposition process described later and obtain a predetermined result. Hereinafter, the process flow or control program will be simply referred to as a program (program product). Furthermore, the process flow will be simply referred to as a process. When the term "program" is used in this specification, there may be cases where only a process unit is included, cases where only a control program unit is included, or cases where both are included. RAM 121b is configured as a storage area (working area) for temporarily holding programs, data, etc., read by the CPU 121a.

[0050] I / O port 121d is connected to the above-mentioned MFC241a~241e, valves 243a~243e, 303~305, 309, pressure sensors 245, 302, APC valve 244, vacuum pump 246, heaters 207, 320, 322a~322c, 324, temperature sensors 263, 321, 323a~323c, rotating mechanism 267, crystal boat lift 115, etc.

[0051] The CPU 121a reads and executes the control program from the storage device 121c, and reads the process from the storage device 121c according to the input of operation commands from the input / output device 122. The CPU 121a is configured to control various gas flow adjustment operations performed by the MFCs 241a to 241e, the opening and closing operations of valves 243a to 243e, 303 to 305, and 309, the opening and closing operations of the APC valve 244, the pressure adjustment operations of the APC valve 244 based on pressure sensors 245 and 302, the start and stop of the vacuum pump 246, the temperature adjustment operations of the heater 207 based on the temperature sensor 263, the rotation and rotation speed adjustment operations of the crystal boat 217 performed by the rotating mechanism 267, and the lifting and lowering operations of the crystal boat 217 performed by the crystal boat elevator 115, etc.

[0052] The controller 121 is configured to install the aforementioned program, which is recorded and stored on an external storage device (e.g., a hard disk, a CD, a USB flash drive, or a semiconductor memory) 123, onto a computer. The storage device 121c and the external storage device 123 constitute a computer-readable recording medium. Hereinafter, they will be collectively referred to as recording media. When the term "recording medium" is used in this specification, sometimes only the storage device 121c is included, sometimes only the external storage device 123 is included, or sometimes both are included. Furthermore, the program may be provided to the computer using communication means such as the Internet or a dedicated line, without using the external storage device 123.

[0053] (2) Processing procedures

[0054] Next, as a step in the semiconductor manufacturing process, the substrate processing step using the aforementioned substrate processing apparatus, and the subsequent processing step for removing deposits from the storage section, are performed using... Figures 3A-3C as well as Figure 4A , Figure 4B The following explanation will be provided. In the following explanation, the operation of each part constituting the substrate processing apparatus is controlled by the controller 121. Figure 3A As shown, steps S1 to S6 are performed in the processing steps. Alternatively, steps S1 to S6 can be performed after step S6.

[0055] As used in this specification, the term "wafer" sometimes refers to the wafer itself, and sometimes to a laminate of the wafer and a predetermined layer or film formed on its surface. The term "surface of the wafer" sometimes refers to the surface of the wafer itself, and sometimes to the surface of a predetermined layer, etc., formed on the wafer. When described in this specification as "forming a predetermined layer on the wafer," it sometimes means forming the predetermined layer directly on the surface of the wafer itself, and sometimes it means forming the predetermined layer on a layer, etc., formed on the wafer. The use of the term "substrate" in this specification is synonymous with the use of the term "wafer."

[0056] (Substrate handling process, step S1)

[0057] If multiple wafers 200 are loaded into the crystal boat 217, then as Figure 1 As shown, a crystal boat 217 supporting multiple wafers 200 is lifted by a crystal boat elevator 115 and moved into the processing chamber 201.

[0058] (Temperature and pressure adjustment process, step S2)

[0059] Vacuum pump 246 performs vacuum exhaust (pressure reduction exhaust) to bring the pressure (vacuum level) within processing chamber 201, i.e., the space containing wafer 200, to the desired pressure. At this time, the pressure within processing chamber 201 is measured by pressure sensor 245, and feedback control is applied to APC valve 244 based on this measured pressure information. Vacuum pump 246 remains continuously operational at least until the processing of wafer 200 is completed. Furthermore, based on temperature information detected by temperature sensors 263, 321, 323a-323b, feedback control is applied to the outputs of heaters 207, 320, 322a-322b, thereby controlling the temperature within processing chamber 201, tank 300, storage area, and supply area to the desired temperature (temperature control). This temperature control continues during steps S1-S6. The following description uses the case where the temperature of tank 300 and storage area is controlled to a predetermined temperature in steps S1-S5 as an example. Additionally, the crystal boat 217 and wafer 200 are rotated using rotation mechanism 267. The rotation of the crystal boat 217 and the wafer 200 by the rotating mechanism 267 continues at least until the processing of the wafer 200 is completed.

[0060] (Substrate processing step S3)

[0061] In step S3, as Figure 3B As shown, the cycle including the following steps S31 to S34 will be performed a predetermined number of times.

[0062] [First processing gas supply step, step S31]

[0063] In step S31, as Figure 3C As shown, steps S311 and S312 are performed to supply the first processing gas to the wafer 200 in the processing chamber 201.

[0064] Storage process, step S311

[0065] In step S311, the first processed gas is stored in a storage compartment (or storage area) at a predetermined temperature. Specifically, valves 243a and 309 are closed beforehand, and valves 303 and 304 are opened, thereby storing the first processed gas, whose flow rate has been adjusted by MFC 241a, in tank 300. In other words, the first processed gas is pressurized in tank 300.

[0066] Supply process, step S312

[0067] In step S312, the first processing gas stored in the storage section (or storage area) is supplied to the wafer 200. Specifically, by closing valve 304 and opening valve 243a, the first processing gas stored in tank 300 is supplied in large quantities at once to the wafer 200 in processing chamber 201 through nozzle 249a and exhausted from exhaust pipe 231. At this time, a first layer composed of at least a portion of the molecular structure of the first processing gas is formed on the wafer 200.

[0068] As in step S31, by supplying the first processing gas, the partial pressure of the first processing gas in the processing chamber 201 can be increased in a short time. This makes it easy to supply a sufficient amount of first processing gas to uniformly and adequately process the entire surface of the wafer 200. Furthermore, when step S3 is performed under conditions where the first processing gas undergoes thermal decomposition within the processing chamber 201, it is easy to uniformly supply the first processing gas before thermal decomposition to the entire surface of the wafer 200. This helps to suppress the influence of decomposition products on the processing results (e.g., the formation of locally thicker films on the wafer 200).

[0069] In step S31, to prevent the first processing gas from entering the nozzle 249b, valve 243e is opened, allowing inert gas to flow into the gas supply pipe 232e. The inert gas is supplied into the processing chamber 201 via the gas supply pipe 232e and the nozzle 249b, and exhausted from the exhaust pipe 231. With valve 305 open simultaneously with at least part of step S31, pressure sensor 302 is used to measure the pressure in the storage area (or the pressure in the tank 300).

[0070] As the first processing gas, a gas containing predetermined elements, such as tungsten (W), titanium (Ti), molybdenum (Mo), tantalum (Ta), cobalt (Co), yttrium (Y), ruthenium (Ru), hafnium (Hf), zirconium (Zr), aluminum (Al), and silicon (Si), can be used. In this case, a layer containing the predetermined elements can be formed on the substrate S as a first layer. One or more of these elements can be used as the first processing gas. A gas activated by plasma or the like can also be used as the first processing gas.

[0071] As a gas containing a predetermined element, for example, a halogen-based gas containing both the predetermined element and a halogen can be used. Examples of halogen-based gases include those containing tungsten hexachloride (WCl6), tungsten hexafluoride (WF6), titanium tetrachloride (TiCl4), titanium tetrafluoride (TiF4), molybdenum pentachloride (MoCl5), molybdenum pentafluoride (MoF5), molybdenum dioxide (MoO2Cl2), molybdenum oxide (MoOCl4), tantalum pentachloride (TaCl5), tantalum pentafluoride (TaF5), cobalt difluoride (CoF2), cobalt difluoride (CoCl2), yttrium trifluoride (YF3), yttrium trichloride (YCl3), ruthenium trichloride (RuCl3), and so on. Gases containing ruthenium fluoride (RuF3), hafnium tetrachloride (HfCl4), zirconium tetrachloride (ZrCl4), zirconium tetrafluoride (ZrF4), aluminum trichloride (AlCl3), aluminum trifluoride (AlF3), dichlorosilane (SiH2Cl2), 1,2-dichlorosilane (Si2H4Cl2), 1,1,1-trichlorosilane (Si2H3Cl3), 1,1,2-trichlorosilane (Si2H3Cl3), pentachlorosilane (Si2HCl5), hexachlorosilane (Si2Cl6), and tetrafluorosilane (SiF4) are also acceptable. Additionally, gases containing the predetermined element, such as silane (SiH4), disilane (Si2H6), propane (Si3H8), and butane (Si4H), can also be used. 10 Gases such as ) and . As a gas containing a predetermined element, one or more of these may be used.

[0072] Furthermore, as a gas containing a predetermined element, for example, a gas containing an organic predetermined element having the predetermined element and an organic ligand can be used. Examples of gases containing an organic predetermined element include those containing hexamethylaminoditungsten (W2[N(CH3)2]6), bis(tert-butylimide)bis(dimethylamide)tungsten ((t-C4H9NH)2W=(Nt-C4H9)2), tetraethylmethylaminotitanium (Ti[N(C2H5)(CH3)]4), bis(ethylcyclopentadienylruthenium) (Ru(EtCp)2), bis(cyclopentadienylruthenium) (Ru(Cp)2), tetraethylmethylaminohafnium (Hf[N(Me)Et]4), tetra(diethylamino)hafnium (Hf[N(Et)2]4), tetraethylmethylaminohafnium (Hf[N(Et)2]4), tetraethyl(diethylamino) ... Gases containing the following elements: (dimethylamino)hafnium (Hf[N(Me)2]4), tris(dimethylamino)cyclopentadienylhafnium ((Cp)Hf[N(Me)2]3), tetra(ethylmethylamino)zirconium (Zr[N(Me)Cp]4), diethylaminozirconium (Zr[N(Et)2]4), tetra(dimethylamino)zirconium (Zr[N(Me)2]4), tris(dimethylamino)cyclopentadienylzirconium ((Cp)Zr[N(Me)2]3), trimethylaluminum (Al(CH3)3), tris(dimethylamino)silane (Si[N(CH3)2]3H), etc. One or more of these elements may be used as the gas containing the predetermined element.

[0073] As inert gases, rare gases such as nitrogen (N2), argon (Ar), helium (He), neon (Ne), and xenon (Xe) can be used. More than one of these gases can be used as an inert gas.

[0074] [Removal process, step S32]

[0075] After forming a first layer containing predetermined elements on at least a portion of the wafer 200, valve 243a is closed to stop the supply of the first processing gas. At this time, APC valve 244 is fully opened, and vacuum pump 246 is used to ventilate the processing chamber 201, removing any unreacted first processing gas remaining in the processing chamber 201 and reaction products generated from the reaction between the first processing gas and the surface of the wafer 200. Meanwhile, valves 243c to 243e remain open to maintain the supply of inert gas to the processing chamber 201. The inert gas functions as a purge gas.

[0076] [Second processing gas supply step, step S33]

[0077] Next, a second processing gas is supplied to the wafer 200 within the processing chamber 201 to react with the first layer, which is the surface (or outermost surface) of the wafer 200. Specifically, valve 243b is opened, allowing the second processing gas to flow within gas supply pipe 232b. The flow rate of the second processing gas is adjusted by MFC 241b, and it is supplied into the processing chamber 201 via nozzle 249b and exhausted from exhaust pipe 231. At the same time, valve 243e is opened, allowing inert gas to flow into gas supply pipe 232e. The flow rate of the inert gas is adjusted by MFC 241e, and it is supplied into the processing chamber 201 together with the second processing gas and exhausted from exhaust pipe 231. In addition, to prevent the second processing gas from entering nozzle 249a, valve 243a is opened, allowing inert gas to flow into gas supply pipe 232a. The inert gas is supplied into the processing chamber 201 via gas supply pipe 232c and / or gas supply pipe 232d and nozzle 249a, and exhausted from exhaust pipe 231.

[0078] By supplying a second processing gas to the wafer 200 under the aforementioned conditions, at least a portion of the first layer formed on the wafer 200 is modified. Thus, a second layer is formed on the wafer 200.

[0079] As a second processing gas, gases including reducing gases, oxidizing gases, nitriding gases, sulfiding gases, selenizing gases, tellurizing gases, etc., can be used. One or more of these gases can be used as the second processing gas. Gases activated by plasma or the like can also be used as the second processing gas.

[0080] For example, when the first processing gas is a gas containing a predetermined element and the second processing gas is a reducing gas, a layer composed of the predetermined element in its elemental form can be formed on the wafer 200 as the second layer. Alternatively, for example, when the first processing gas is a gas containing a predetermined element and the second processing gas is any one of an oxidizing gas, a nitriding gas, a sulfiding gas, a selenizing gas, or a tellurizing gas, an oxide layer of the predetermined element, a nitriding layer of the predetermined element, a sulfiding layer of the predetermined element, a selenizing layer of the predetermined element, or a tellurizing layer of the predetermined element can be formed on the wafer 200 as the second layer.

[0081] As a reducing gas, one or more of the following gases may be used: hydrogen (H2), deuterium (D2), borane (BH3), diborane (B2H6), carbon monoxide (CO), ammonia (NH3), silane (SiH4), disilane (Si2H6), propane (Si3H8), germanane (GeH4), and digerane (Ge2H6). As an oxidizing gas, one or more of the following gases may be used: oxygen (O2), ozone (O3), water vapor (H2O), a mixture of H2 and O2, hydrogen peroxide (H2O2), and nitrous oxide (N2O). As a nitriding gas, one or more of the following hydrogen nitride gases may be used: ammonia (NH3), diazoxide (N2H2), hydrazine (N2H4), and N3H8. For example, gases containing hydrogen sulfide (H₂S), hydrogen persulfide (H₂S₂), ammonium disulfide ((NH₄)₂S), dimethyl sulfide ((CH₃)₂S), etc., can be used as sulfide gases. One or more of these gases can be used as sulfide gases. For example, gases containing selenoalkane (H₂Se), diselenoalkane (H₂Se₂), dimethylselenide ((CH₃)₂Se), etc., can be used as selenide gases. One or more of these gases can be used as selenide gases. For example, gases containing hydrogen telluride (H₂Te), hydrogen ditelluride (H₂Te₂), dimethyl telluride ((CH₃)₂Te), etc., can be used as telluride gases. One or more of these gases can be used as telluride gases.

[0082] [Removal process, step S34]

[0083] After at least a portion of the first layer on wafer 200 is modified into the second layer, valve 243b is closed to stop the supply of the second processing gas. At this time, a vacuum is vented from the processing chamber 201 to remove the gas from the processing chamber 201. Step S34 is performed in the same order as step S32.

[0084] (Number of scheduled implementations)

[0085] The cycle comprising steps S31 to S34 is performed a predetermined number of times (n1 times, where n1 is an integer of 1 or 2 or more). This forms a film of predetermined thickness containing a predetermined element on the wafer 200. For example, the film may be composed of a predetermined element, an oxide film of a predetermined element, a nitride film of a predetermined element, a sulfide film of a predetermined element, a selenide film of a predetermined element, or a telluride film of a predetermined element.

[0086] (Pressure and temperature adjustment process, step S4)

[0087] Inert gas is supplied into the processing chamber 201 through gas supply pipes 232c to 232e, and exhaust is carried out through exhaust pipe 231. As a result, the processing chamber 201 is purged, and the atmosphere inside the processing chamber 201 is replaced with inert gas, and the pressure inside the processing chamber 201 is restored to atmospheric pressure.

[0088] (Substrate removal process, step S5)

[0089] The sealing cover 219 is lowered by the crystal boat lift 115, opening the lower end of the manifold 209. Then, the processed wafer 200, supported on the crystal boat 217, is moved from the lower end of the manifold 209 to the outside of the reaction tube 203 and out of the processing chamber 201. The processed wafer 200 is then removed from the crystal boat 217.

[0090] (Number of scheduled implementations)

[0091] The loop containing steps S1 to S5 above will be performed a predetermined number of times (n2 times, where n2 is an integer of 1 or 2 or higher).

[0092] (Attachment removal process, step S6)

[0093] A deposit removal process (step S6) is performed to remove deposits from the first treatment gas supply system. Hereinafter, using... Figure 4A , Figure 4B An example of step S6 will be described. In step S6, as follows: Figure 4A As shown, the tank heating process (step S61), tank purging process (step S62), and tank cooling process (step S63) are performed sequentially. In addition, step S61 can also be performed simultaneously with steps S4 and S5.

[0094] [Tank heating process, step S61]

[0095] The temperature of tank 300 is set to a temperature higher than the predetermined temperature (the temperature of tank 300 in steps S1 to S5). At this time, it is preferable to set the temperature of the storage area including tank 300 to a temperature higher than the predetermined temperature. Specifically, the power supplied to heater 320 is controlled by feedback based on the temperature information detected by temperature sensor 321, so that tank 300 and the storage area are at a temperature higher than the predetermined temperature. Such temperature control continues at least until the tank purging process S62 ends.

[0096] [Can purging process, step S62]

[0097] In step S62, purge gas is supplied to the tank 300, which has a second temperature higher than the first temperature, and the purge gas in the tank 300 is vented. The following is an example of step S62. Figure 4BAs shown, the explanation will be based on the case where the first purging step S621 and the second purging step S622 are performed sequentially.

[0098] First purging process, step S621

[0099] In step S621, as Figure 4B As shown, the first purge gas storage step S621-1 and the first purge gas exhaust step S621-2 are performed. Specifically, purge gas is stored in tank 300, and the purge gas stored in tank 300 is exhausted using a path that does not pass through processing chamber 201.

[0100] [First purge gas storage process, step S621-1]

[0101] In step S621-1, the purge gas supplied to tank 300 is stored within tank 300. Specifically, by opening valves 243c and 243d, an inert gas, which has had its flow rate adjusted by MFCs 241c and d, is supplied to tank 300. At this time, by pre-closing valves 243a, 309, and 303, the purge gas supplied to tank 300 can be stored within tank 300. In other words, the purge gas is pressurized within tank 300. Furthermore, in steps S621-1 and S621-2 (described later), at least a portion of the flow path through which the purge gas is supplied to tank 300 is heated, for example, using heater 324.

[0102] As an example of the processing conditions for step S621-1, the following is illustrated:

[0103] Processing time: 1–30 seconds, preferably 5–25 seconds;

[0104] The flow rate of the purging gas supplied to the tank 300 is 0.1~2.0 slm, preferably 0.5~1.5 slm.

[0105] [First purging gas exhaust process, step S621-2]

[0106] In step S621-2, the purge gas stored in tank 300 is exhausted through a path that bypasses processing chamber 201. Specifically, by closing valves 304, 243a, and 243d and opening valve 309, the purge gas stored in tank 300 is exhausted by vacuum pump 246 via gas exhaust pipe 308. That is, in step S621-2, the purge gas in tank 300 is exhausted through a path that bypasses the space where wafer 200 is internally arranged in step S3.

[0107] As a processing condition for step S 621-2, the following is an example:

[0108] Processing time: 1 to 30 seconds, preferably 5 to 25 seconds.

[0109] (Number of scheduled implementations)

[0110] The loop including steps S621-1 and S621-2 above is performed a predetermined number of times (n3 times, where n3 is an integer of 1 or 2 or more). For example, n3 is 1 to 1000, preferably 10 to 800.

[0111] Second purging process, step S622

[0112] In step S622, as Figure 4B As shown, the second purge gas storage step S622-1 and the second purge gas exhaust step S622-2 are performed. Specifically, purge gas is stored in tank 300, and the purge gas stored in tank 300 is exhausted through a path via processing chamber 201.

[0113] [Second purge gas storage process, step S622-1]

[0114] In step S622-1, the purge gas supplied to tank 300 is stored in tank 300. Step S622-1 is performed, for example, in the same order and under the same processing conditions as step S621-1.

[0115] [Second purging gas exhaust process, step S622-2]

[0116] In step S622-2, the purge gas stored in tank 300 is exhausted via the path through processing chamber 201. Specifically, by closing valves 304, 309, and 243d and opening valve 243a, the purge gas stored in tank 300 is supplied to processing chamber 201 and exhausted by vacuum pump 246 through exhaust pipe 231. That is, in step S621-2, the purge gas in tank 300 is discharged via the path through the space where wafer 200 is internally arranged in step S3.

[0117] As an example of the processing condition for step S622-2, the following is illustrated:

[0118] Processing time: 1 to 30 seconds, preferably 5 to 25 seconds.

[0119] (Number of scheduled implementations)

[0120] The loop containing steps S622-1 and S622-2 above will be performed a predetermined number of times (n4 times, where n4 is an integer of 1 or 2 or higher).

[0121] [Tank cooling process, step S63]

[0122] The temperature of tank 300 and storage area is set to a predetermined temperature. Specifically, the power supplied to heater 320 is controlled by feedback based on the temperature information detected by temperature sensor 321, so that tank 300 and storage area reach the predetermined temperature.

[0123] According to this embodiment, in addition to the effects described above, one or more of the effects shown below can also be obtained.

[0124] (a) When the wafer 200 is processed using a gas obtained by causing a phase change of a liquid or solid object, as described above, the first processing gas may sometimes liquefy or solidify (phase change) within the first processing gas supply system and adhere to the inner wall of the first processing gas supply system. These deposits may sometimes be detached from the inner wall of the first processing gas supply system due to the flow of gas within the system and transported to the processing chamber 201 and onto the wafer 200, becoming particles.

[0125] Especially in substrate processing using a storage section as in this embodiment, a large amount of first processing gas, pressurized within the storage section (or supply zone), moves from the storage section into the processing chamber 201 in a short time. Therefore, deposits within the storage section and storage zone are particularly easily transported into the processing chamber 201 and onto the wafer 200. Consequently, when only deposit removal methods used in substrate processing apparatuses without storage sections such as the tank 300 are applied, particle generation is sometimes insufficiently suppressed.

[0126] In this embodiment, after step S3, step S6 is performed, which involves supplying purge gas into the container 300, which is at a second temperature higher than the first temperature, and venting the purge gas from the container 300. This causes the deposits inside the container 300 resulting from liquefaction or solidification to change into a gaseous phase, thus promoting their removal from the first processing gas supply system. Therefore, it is possible to suppress the adhesion of particles to the wafer 200.

[0127] (b) In this embodiment, in the first purging step S621 and the second purging step S622, purging gas is stored in the tank 300 (storage section), and then the purging gas stored in the tank 300 is vented. As a result, at least one of the following effects can be obtained.

[0128] (b1) By storing purge gas inside the canister 300, the interior of the canister 300 can be heated using a large number of purge gas molecules. This effectively heats the deposits present in cold spots (areas where the temperature is locally lower due to some reason) inside the canister 300. This promotes the phase transition of the deposits inside the canister to the gas phase, thereby further suppressing the adhesion of particles to the wafer 200.

[0129] (b2) By venting the purge gas heated in the tank 300, the phase transition of deposits to the gas phase downstream of the tank 300 (e.g., the inner walls of the gas supply pipe 232a, processing chamber 201, exhaust pipes 301 and 308, valves 243a and 309, their surroundings, the interior of the vacuum pump 246, etc.) can be promoted. Therefore, film deposition at these locations and particle adhesion to the wafer 200 can be suppressed.

[0130] (c) In step S621-2, the purge gas in the tank 300 is vented through a path that does not pass through the space where the wafer 200 is arranged in step S3. As a result, it is possible to prevent the deposits removed from the tank 300 from being transported into the processing chamber 201 and adhering to the wafer 200 that is subsequently moved into the processing chamber 201.

[0131] (d) In step S622-2, the purge gas in the tank 300 is vented via the path through the space where the wafer 200 is arranged in step S3. As a result, for example, deposits on valves 243a, 305, the first and second storage compartments can be removed efficiently, thus further suppressing the adhesion of the wafer 200 that is moved into the processing chamber 201.

[0132] (e) In this embodiment, after performing steps S621-1 and S621-2 a predetermined number of times, steps S622-1 and S622-2 are performed a predetermined number of times. Therefore, after removing the deposits from the tank 300, heated purge gas can be supplied from the tank 300 into the processing chamber 201. This makes it difficult to transport the deposits removed from the tank 300 into the processing chamber 201, and also removes deposits from the valve 243a and the gas supply pipe 232a. Furthermore, it is preferable to perform steps S622-1 and S622-2 after performing steps S621-1 and S621-2 multiple times. This makes it difficult to transport further deposits removed from the tank 300 into the processing chamber 201.

[0133] (f) Preferably, the volume per unit length of the tank 300 is greater than that of the flow path connected to the tank 300 (in this embodiment, the gas supply pipe 232a). This allows for the storage of a larger amount of the first processing gas, thus facilitating a rapid increase in the partial pressure of the first processing gas within the processing chamber 201. However, in this case, first processing gas tends to remain inside the tank 300, and cold spots are easily generated within the tank 300. Consequently, deposits easily form inside the tank 300, and even small amounts of deposits can lead to particle generation. According to this disclosure, even under such conditions, deposits inside the tank 300 can be effectively removed.

[0134] (g) In step S62, it is preferable to make the temperature of the storage area higher than a predetermined temperature. This can promote the phase change of the deposits in the tank 300 or in the flow path connected to the tank 300 into the gas phase.

[0135] (h) In the supply zone, it is difficult for a large amount of gas to move into the processing chamber 201 in a short period of time, as is the case in the tank 300 or the storage zone in step S3. Therefore, the deposits in the supply zone are less likely to cause particle generation compared to the deposits in the tank 300. Therefore, in step S62, it is preferable to keep the temperature of the supply zone lower than the temperature of the tank 300 or the storage zone to suppress power consumption. In addition, if the supply zone is at a high temperature, it may sometimes promote the deterioration of the MFC241a. Therefore, in step S62, it is preferable to keep the temperature of the supply zone lower than the temperature of the tank 300 or the storage zone.

[0136] (i) In step S621-1, for example, heater 324 can be used to heat at least a portion of the flow path through which purge gas is supplied to tank 300. Preferably, in step S621-1, at least a portion of the flow path through which purge gas is supplied to tank 300 is heated to a temperature higher than the processing temperature. This allows for efficient heating of the deposits within the storage area.

[0137] <Other methods of this disclosure>

[0138] The above describes one aspect of this disclosure. However, this disclosure is not limited to the above-described aspect and various modifications can be made without departing from its spirit.

[0139] In the above-described manner, step S62 is exemplified by sequentially performing the first purging step S621 and the second purging step S622. However, this disclosure is not limited thereto. Either the first purging step S621 or the second purging step S622 may be omitted in step S62. In this case, at least some of the aforementioned effects can still be obtained.

[0140] In the above-described manner, step S62 is exemplified by storing purge gas in the tank 300 and venting the purge gas stored in the tank 300, as in the first purging step S621 or the second purging step S622. However, this disclosure is not limited to this. For example, in step S62, purge gas may be supplied to the tank 300 at a second temperature higher than the first temperature while venting the purge gas in the tank 300. In such a case, at least some of the effects described above can also be obtained.

[0141] The above method exemplifies the case where, in steps S621-1 and S621-2, at least a portion of the flow path supplying purge gas to the tank 300 is heated using heater 324. However, this disclosure is not limited to this. Heater 324 can be omitted, and in step S621-1, purge gas at a temperature lower than a predetermined temperature can be supplied to the storage compartment. Even in such a case, at least some of the aforementioned effects can be obtained. Furthermore, in step S62, when purge gas is stored in the tank 300 and the stored purge gas in the tank 300 is vented, and when the volume per unit length of the tank 300 is greater than the flow path connected to the tank 300, the purge gas in the tank 300 is more easily heated. Therefore, the aforementioned effects are more easily obtained.

[0142] Furthermore, in the above-described manner, the case where a first inert gas supply system and a second inert gas supply system are provided in the gas supply pipe 232a as the inert gas supply system has been described, but this disclosure is not limited to this. The second inert gas supply system may also be used as the first inert gas supply system. A third supply source 307, gas supply pipe 232d, MFC 241d, and valve 243d may also be used instead of the second supply source 306, gas supply pipe 232c, MFC 241c, and valve 243c. In this modified example, the same effects as the described manner and modified example can also be obtained.

[0143] Furthermore, the above method describes the purging of the first processing gas supply system in step S6. However, it is not limited to this; the technology of this disclosure can also be applied when purging the second processing gas supply system, which is equipped with a storage unit. Additionally, the technology of this disclosure can also be applied when purging the supply system of a gas other than the first or second processing gas.

[0144] The above method illustrates an example of using an inert gas (i.e., N2, rare gases, etc., considered as gases that do not exhibit reactivity) as the purge gas. However, the purge gas can also be a gas that exhibits chemical action, such as an oxidizing or reducing gas used to oxidize or reduce the surface of the wafer 200, components within the processing chamber 201, or other gases. Furthermore, inert gases are often less expensive than gases that exhibit chemical action; therefore, using an inert gas as the purge gas can reduce processing costs.

[0145] In the above-described method, an example of forming a film using a batch-type substrate processing apparatus that processes multiple substrates at a time has been explained. This disclosure is not limited to the above-described method and its variations; for example, it can also be appropriately applied when forming a film using a monolithic substrate processing apparatus that processes one or more substrates at a time. Furthermore, in the above-described method and its variations, an example of forming a film using a substrate processing apparatus with a hot-wall type processing furnace has been explained. This disclosure is not limited to the above-described method and its variations; it can also be appropriately applied to cases where a film is formed using a substrate processing apparatus with a cold-wall type processing furnace.

[0146] When using these substrate processing apparatuses, each processing step and processing condition can be performed in the same manner and under the same conditions as described above, and the same effect as described above can be obtained.

[0147] The above methods can be used in combination as appropriate. In this case, the processing order and processing conditions can be set to be the same as those of the methods and variations described above.

[0148] Explanation of reference numerals in the attached figures

[0149] 200···· wafers (substrates)

[0150] 201···· Processing Room

[0151] 300···· tank (storage section).

Claims

1. A substrate processing method, characterized in that, It has process a and process b, which is performed after process a. The process a includes: Step a1 involves storing the processed gas obtained by phase change of a liquid or solid substance in a storage compartment at a predetermined temperature; and In step a2, the processing gas stored in the storage section is supplied to the substrate. The process b includes: Step b1 involves supplying purge gas to the storage section at a temperature higher than the predetermined temperature; and Step b2 involves venting the purging gas from the storage section.

2. The substrate processing method according to claim 1, characterized in that, As process b2, In step b21, the purge gas in the storage section is vented without passing through the space where the substrate is arranged in step a.

3. The substrate processing method according to claim 1, characterized in that, As process b2, In step b22, the purge gas in the storage section is vented via a path through the space in which the substrate is arranged in step a.

4. The substrate processing method according to claim 1, characterized in that, Process b2 includes: Step b21 involves venting the purge gas from the storage section without passing through the space where the substrate is positioned in step a; and In step b22, the purge gas in the storage section is vented via a path through the space where the substrate is arranged in step a. In process b, after a predetermined number of processes b1 and b21 are performed, a predetermined number of processes b1 and b22 are performed.

5. The substrate processing method according to any one of claims 1 to 4, characterized in that, The volume per unit length of the storage section is greater than that of the flow path connected to the storage section.

6. The substrate processing method according to any one of claims 1 to 5, characterized in that, In step b, including the storage section, the temperature of the storage area where the processing gas is stored in step a is higher than the predetermined temperature.

7. The substrate processing method according to any one of claims 1 to 6, characterized in that, In step b, the temperature of the supply zone for supplying the processing gas to the storage section is lower than the temperature of the storage zone.

8. The substrate processing method according to any one of claims 1 to 7, characterized in that, In step b, at least a portion of the flow path through which the purging gas is supplied to the storage section is heated.

9. The substrate processing method according to any one of claims 1 to 8, characterized in that, In step b1, the purge gas at a temperature lower than the predetermined temperature is supplied to the storage section.

10. The substrate processing method according to any one of claims 1 to 9, characterized in that, In step b1, the purging gas is stored in the storage section. In step b2, the purging gas stored in the storage section is vented.

11. A method for manufacturing a semiconductor device, characterized in that, It has process a and process b, which is performed after process a. The process a includes: Step a1 involves storing the processed gas obtained by phase change of a liquid or solid substance in a storage compartment at a predetermined temperature; and In step a2, the processing gas stored in the storage section is supplied to the substrate. The process b includes: Step b1 involves supplying purge gas to the storage section at a temperature higher than the predetermined temperature; and Step b2 involves venting the purging gas from the storage section.

12. A program product, characterized in that, The computer causes the substrate processing apparatus to execute step a and step b, which is performed after step a. Step a includes: Step a1 involves storing the processed gas obtained by phase transition of a liquid or solid substance in a storage compartment at a predetermined temperature; and Step a2: The processing gas stored in the storage section is supplied to the substrate. Step b includes: Step b1, supplying purge gas into the storage section at a temperature higher than the predetermined temperature; and Step b2: Exhaust the purging gas in the storage section.

13. A substrate processing apparatus, characterized in that, have: The processing chamber contains a substrate. The storage unit is connected to the processing gas supply source, the purge gas supply source, the processing chamber, and the exhaust system. The processing gas supply source supplies processing gas obtained by phase change of liquid or solid substances, and the purge gas supply source supplies purge gas. A processing gas supply system configured to control the flow of gas between the processing gas supply source, the purge gas supply source, the processing chamber, the exhaust system, and the storage unit; A first temperature control system controls the temperature of the storage section; and The control unit is configured to control the processing gas supply system and the first temperature control system to perform processing a and processing b performed after processing a: The process a includes: Process a1 involves storing the processed gas in the storage compartment at a predetermined temperature; and In process a2, the processing gas stored in the storage section is supplied to the substrate. The process b includes: Process b1 involves supplying purge gas to the storage section at a temperature higher than the predetermined temperature; and Process b2 involves venting the purging gas from the storage section.

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