Deposition parameter control method, apparatus, and device

Abstract

Embodiments of the present application provide a deposition parameter control method, device and equipment. The method comprises: collecting a current cavity temperature and a current cavity pressure in a reaction chamber cavity during a deposition process; determining a disturbance parameter according to the current cavity temperature and the current cavity pressure; determining a compensation adjustment set according to the disturbance parameter, the compensation adjustment set being used to indicate a compensation amount of at least one target process parameter affected by the disturbance parameter; and generating a feedforward compensation signal based on the compensation adjustment set, so that the target process parameter is adjusted synchronously when the disturbance parameter occurs, to maintain a process state. The method is used to improve the process stability in the chemical vapor deposition process.

Description

Technical Field

[0001] This application relates to the fields of chemical vapor deposition equipment control and quartz glass preparation, and particularly to a method, apparatus and equipment for controlling deposition parameters. Background Technology

[0002] Chemical vapor deposition is a common process for preparing high-purity quartz glass products. Existing equipment typically controls the temperature, gas flow rate, and chamber pressure during the deposition process.

[0003] In existing technologies, most parameters are adjusted independently, either as a single parameter or a few parameters. This makes it difficult to suppress the coupled disturbances between temperature, flow rate, and pressure, which can easily lead to lag in the deposition process and parameter mismatch, resulting in poor process stability during chemical vapor deposition. Summary of the Invention

[0004] This application provides a method, apparatus, and equipment for controlling deposition parameters, which can improve the process stability during chemical vapor deposition.

[0005] In a first aspect, embodiments of this application provide a method for controlling deposition parameters, including:

[0006] Collect the current chamber temperature and pressure within the reaction chamber during the deposition process;

[0007] The disturbance parameters are determined based on the current cavity temperature and the current cavity pressure.

[0008] Based on the disturbance parameters, a set of compensation adjustment amounts is determined, which indicates the amount of compensation for at least one target process parameter affected by the disturbance parameters.

[0009] Based on the set of compensation adjustment amounts, a feedforward compensation signal is generated so that the target process parameters are adjusted synchronously when the disturbance parameters are generated, so as to maintain the process state.

[0010] In one possible implementation, determining the disturbance parameters based on the current cavity temperature and the current cavity pressure includes:

[0011] Obtain the temperature and pressure reference curves corresponding to the deposition process type;

[0012] Based on the temperature reference curve and the pressure reference curve, determine the temperature deviation corresponding to the current cavity temperature and the pressure deviation corresponding to the current cavity pressure;

[0013] The disturbance parameters are determined in response to the absolute value of the temperature deviation being greater than a preset temperature difference value and / or the absolute value of the pressure deviation being greater than a preset pressure difference value.

[0014] In one possible implementation, determining the temperature deviation corresponding to the current cavity temperature and the pressure deviation corresponding to the current cavity pressure based on the temperature reference curve and the pressure reference curve includes:

[0015] In the temperature reference curve and the pressure reference curve, determine the cavity temperature reference value and cavity pressure reference value corresponding to the current deposition time;

[0016] The difference between the current cavity temperature and the cavity temperature reference value is determined as the temperature deviation;

[0017] The difference between the current cavity pressure and the cavity pressure reference value is determined as the pressure deviation.

[0018] In one possible implementation, the current cavity temperature includes the upper furnace temperature and the lower furnace temperature within the reaction chamber; the cavity temperature reference value includes the upper furnace temperature reference value and the lower furnace temperature reference value; the difference between the current cavity temperature and the cavity temperature reference value is determined as the temperature deviation, including:

[0019] The temperature deviation is defined as the first deviation between the upper furnace temperature and the upper furnace temperature reference value and the second deviation between the lower furnace temperature and the lower furnace temperature reference value.

[0020] In one possible implementation, the compensation amount for the at least one target process parameter includes a temperature compensation amount corresponding to the current cavity temperature, a pressure compensation amount corresponding to the current cavity pressure, and a gas flow compensation amount corresponding to the process gas flow rate; based on the disturbance parameter, a set of compensation adjustment amounts is determined, including:

[0021] Based on the disturbance parameters, determine the temperature compensation amount corresponding to the current cavity temperature and the pressure compensation amount corresponding to the current cavity pressure;

[0022] The airflow compensation amount corresponding to the process airflow rate is determined based on the temperature compensation amount corresponding to the current cavity temperature and the pressure compensation amount corresponding to the current cavity pressure.

[0023] In one possible implementation, a feedforward compensation signal is generated based on the set of compensation adjustment amounts, including:

[0024] Based on the temperature compensation amount corresponding to the current cavity temperature, a feedforward compensation signal corresponding to the air supply device of the reaction chamber is generated.

[0025] Based on the pressure compensation amount corresponding to the current cavity pressure, a feedforward compensation signal corresponding to the exhaust pipe of the reaction chamber is generated.

[0026] Based on the compensation adjustment amount corresponding to the process gas flow rate, a feedforward compensation signal corresponding to the gas supply system of the reaction chamber is generated.

[0027] In one possible implementation, the temperature compensation amount corresponding to the current cavity temperature includes a temperature compensation amount corresponding to the upper furnace temperature and a temperature compensation amount corresponding to the lower furnace temperature; based on the temperature compensation amount corresponding to the current cavity temperature, a feedforward compensation signal corresponding to the air supply device of the reaction chamber is generated, including:

[0028] Based on the temperature compensation amount corresponding to the upper furnace temperature, a feedforward compensation signal corresponding to the first air supply device of the reaction chamber is generated.

[0029] Based on the temperature compensation amount corresponding to the lower furnace temperature, a feedforward compensation signal corresponding to the second air supply device of the reaction chamber is generated.

[0030] The first air supply device is the air supply device corresponding to the upper furnace chamber inside the reaction chamber, and the second air supply device is the air supply device corresponding to the lower furnace chamber inside the reaction chamber.

[0031] In one possible implementation, it also includes:

[0032] During the deposition process, the cavity temperature, cavity pressure, and process gas flow rate are obtained.

[0033] A process report is generated based on the cavity temperature, cavity pressure, and process gas flow rate during the deposition process.

[0034] Secondly, embodiments of this application provide a deposition parameter control device including a data acquisition module, a first determination module, a second determination module, and a first generation module, wherein...

[0035] The acquisition module is used to acquire the current chamber temperature and current chamber pressure within the reaction chamber during the deposition process;

[0036] The first determining module is used to determine the disturbance parameters based on the current cavity temperature and current cavity pressure;

[0037] The second determining module is used to determine a set of compensation adjustment amounts based on the disturbance parameters. The set of compensation adjustment amounts is used to indicate the compensation amount for at least one target process parameter affected by the disturbance parameters.

[0038] The first generation module is used to generate a feedforward compensation signal based on the set of compensation adjustment amounts, so that the target process parameters are adjusted synchronously when disturbance parameters are generated, so as to maintain the process state.

[0039] In one possible implementation, the first determining module is specifically used for:

[0040] Obtain the temperature and pressure reference curves corresponding to the deposition process type;

[0041] Based on the temperature reference curve and the pressure reference curve, determine the temperature deviation corresponding to the current cavity temperature and the pressure deviation corresponding to the current cavity pressure;

[0042] In response to the absolute value of the temperature deviation being greater than a preset temperature difference and / or the absolute value of the pressure deviation being greater than a preset pressure difference, the disturbance parameters are determined.

[0043] In one possible implementation, the first determining module is specifically used for:

[0044] Determine the cavity temperature reference value and cavity pressure reference value corresponding to the current deposition time from the temperature reference curve and pressure reference curve;

[0045] The difference between the current cavity temperature and the cavity temperature reference value is defined as the temperature deviation;

[0046] The difference between the current chamber pressure and the chamber pressure reference value is defined as the pressure deviation.

[0047] In one possible implementation, the current cavity temperature includes the upper furnace temperature and the lower furnace temperature within the reaction chamber; the cavity temperature reference value includes the upper furnace temperature reference value and the lower furnace temperature reference value; the first determining module is specifically used for:

[0048] The first deviation between the upper furnace temperature and the upper furnace temperature reference value and the second deviation between the lower furnace temperature and the lower furnace temperature reference value are defined as temperature deviations.

[0049] In one possible implementation, the compensation amount for at least one target process parameter includes a temperature compensation amount corresponding to the current cavity temperature, a pressure compensation amount corresponding to the current cavity pressure, and a gas flow compensation amount corresponding to the process gas flow rate; the second determining module is specifically used for:

[0050] Based on the disturbance parameters, determine the temperature compensation amount corresponding to the current cavity temperature and the pressure compensation amount corresponding to the current cavity pressure.

[0051] Based on the temperature compensation amount corresponding to the current cavity temperature and the pressure compensation amount corresponding to the current cavity pressure, determine the airflow compensation amount corresponding to the process airflow rate.

[0052] In one possible implementation, the first generation module is specifically used for:

[0053] Based on the temperature compensation amount corresponding to the current cavity temperature, a feedforward compensation signal corresponding to the air supply device of the reaction chamber is generated.

[0054] Based on the pressure compensation amount corresponding to the current cavity pressure, a feedforward compensation signal corresponding to the exhaust pipe of the reaction chamber is generated.

[0055] Based on the compensation adjustment amount corresponding to the process gas flow rate, a feedforward compensation signal corresponding to the gas supply system of the reaction chamber is generated.

[0056] In one possible implementation, the temperature compensation amount corresponding to the current cavity temperature includes the temperature compensation amount corresponding to the upper furnace temperature and the temperature compensation amount corresponding to the lower furnace temperature; the first generation module is specifically used for:

[0057] Based on the temperature compensation amount corresponding to the upper furnace temperature, a feedforward compensation signal corresponding to the first air supply device of the reaction chamber is generated.

[0058] Based on the temperature compensation amount corresponding to the lower furnace temperature, a feedforward compensation signal corresponding to the second air supply device of the reaction chamber is generated.

[0059] The first air supply device is the air supply device corresponding to the upper furnace chamber inside the reaction chamber, and the second air supply device is the air supply device corresponding to the lower furnace chamber inside the reaction chamber.

[0060] In one possible implementation, a second generation module is also included. The second generation module is used for:

[0061] During the deposition process, the cavity temperature, cavity pressure, and process gas flow rate are obtained.

[0062] A process report is generated based on the cavity temperature, cavity pressure, and process gas flow rate during the deposition process.

[0063] Thirdly, embodiments of this application provide an electronic device, including: a memory and a processor;

[0064] The memory stores computer-executed instructions;

[0065] The processor executes computer execution instructions stored in the memory, causing the processor to perform the first aspect and / or various possible implementations of the first aspect as described above.

[0066] Fourthly, embodiments of this application provide a computer-readable storage medium storing computer-executable instructions, which, when executed by a processor, are used to implement the first aspect and / or various possible implementations of the first aspect.

[0067] Fifthly, embodiments of this application provide a computer program product, including a computer program that, when executed by a processor, implements the first aspect and / or various possible implementations of the first aspect.

[0068] The deposition parameter control method, apparatus, and equipment provided in this application collect the current chamber temperature and pressure within the reaction chamber during the deposition process. Based on these parameters, disturbance parameters are determined, a set of compensation adjustment amounts is calculated, and a feedforward compensation signal is generated. In this application, the temperature and pressure states within the reaction chamber are simultaneously collected to obtain disturbance parameters characterizing abnormal operating conditions. Subsequently, the disturbance parameters are converted into a set of compensation adjustment amounts for at least one target process parameter, and this set is then converted into a feedforward compensation signal. This processing path enables the target process parameter to be adjusted synchronously when disturbance parameters are generated, compressing the transmission time of chain fluctuations between temperature, pressure, and related process states. Even when heat loss at the furnace edge is significant or atmospheric conditions fluctuate, the continuous stability of the process state within the reaction chamber can be maintained, and the deposition layer thickness and density remain within a controlled range. Attached Figure Description

[0069] The accompanying drawings, which are incorporated in and form part of this specification, illustrate embodiments consistent with this application and, together with the description, serve to explain the principles of this application.

[0070] Figure 1 A schematic diagram illustrating one application scenario provided in this application;

[0071] Figure 2 This application provides a schematic diagram of the structure of a deposition apparatus;

[0072] Figure 3 A schematic flowchart of a deposition parameter control method provided in this application;

[0073] Figure 4 A schematic flowchart of another deposition parameter control method provided in this application;

[0074] Figure 5 A schematic diagram of the architecture of a deposition parameter control method provided in this application;

[0075] Figure 6 This is a schematic diagram of a deposition parameter control device provided in this application;

[0076] Figure 7 This is a schematic diagram of the structure of an electronic device provided in this application.

[0077] The accompanying drawings illustrate specific embodiments of this application, which will be described in more detail below. These drawings and descriptions are not intended to limit the scope of the concept in any way, but rather to illustrate the concept of this application to those skilled in the art through reference to particular embodiments. Detailed Implementation

[0078] Exemplary embodiments will now be described in detail, examples of which are illustrated in the accompanying drawings. When the following description relates to the drawings, unless otherwise indicated, the same numbers in different drawings denote the same or similar elements. The embodiments described in the following exemplary embodiments do not represent all embodiments consistent with this application. Rather, they are merely examples of apparatuses and methods consistent with some aspects of this application as detailed in the appended claims.

[0079] The chemical vapor deposition technology of this application is widely used in the preparation of high-purity quartz glass products and is applicable to the deposition and forming process of products such as quartz crucibles, quartz optical components and quartz optical fiber preforms.

[0080] Figure 1 This is a schematic diagram illustrating one application scenario provided by this application. Please refer to [link / reference]. Figure 1 This application scenario includes a deposition apparatus 101, a controller 102, and a host computer 103. The controller 102 can collect the current chamber temperature and pressure within the reaction chamber of the deposition apparatus 101 during the deposition process; based on the current chamber temperature and pressure, it determines disturbance parameters and, based on the disturbance parameters, determines a set of compensation adjustment amounts. This set of compensation adjustment amounts indicates the compensation amount for at least one target process parameter affected by the disturbance parameters; based on the set of compensation adjustment amounts, it generates a feedforward compensation signal to ensure that the target process parameters are adjusted synchronously when the disturbance parameters are generated, thereby maintaining the process state. The controller 102 controls the gas supply system, pressure regulating valve, and make-up air device of the deposition apparatus 101 by sending the feedforward compensation signal to the host computer 103, achieving coordinated regulation of chamber temperature, chamber pressure, and gas flow. The controller 102 can be a programmable logic controller (PLC).

[0081] Figure 2 This is a schematic diagram of a deposition apparatus provided in this application. Please refer to [link / reference]. Figure 2 As shown, the deposition equipment 101 may include a gas supply system 1, a furnace body 2, a reaction chamber 3, an exhaust pipe 4, a temperature measuring thermocouple 5, a deposition chuck 6, a make-up air device 7, and a filter 8.

[0082] The deposition process is usually completed in the reaction chamber 3, which is a closed reaction chamber composed of an upper furnace and a lower furnace, providing a spatial environment for the deposition reaction; the deposition chuck 6 is set in the reaction chamber 3 to support the substrate to be deposited.

[0083] The gas supply system 1 connects to various process gas sources and sends the gas into the reaction chamber 3 after the gas flow rate is regulated by a mass flow controller. Temperature measuring thermocouples 5 are distributed in the upper and lower furnace areas to collect temperature signals from the upper and lower furnaces in real time and transmit them to the controller.

[0084] The air supply device 7 is located on both sides of the furnace, including a first air supply device corresponding to the upper furnace and a second air supply device corresponding to the lower furnace. Each air supply device is equipped with an independently adjustable air valve and an electric actuator. By differentially adjusting the air supply volume corresponding to each furnace, thermal compensation for axial partitioning of the deposition surface and active shaping of the airflow field are achieved.

[0085] The filter 8 is located at the front end of the air supply valve of the dual-sided air supply device 7, and is used to filter particulate matter and adsorb chemical impurities in the air supplied to the reaction chamber. The exhaust pipe 4 is connected to the side of the reaction chamber 3, and is used to discharge reaction by-products and waste gas. The pipe is equipped with an automatic pressure regulating valve and a pressure sensor to achieve precise closed-loop control of the pressure in the reaction chamber 3.

[0086] Existing deposition control methods typically establish control loops around chamber temperature, gas flow rate, and chamber pressure. Temperature control components regulate the thermal field, gas supply components maintain the reaction atmosphere, and pressure regulation components stabilize the chamber environment to meet the basic requirements of quartz material deposition reactions.

[0087] In existing technologies, deposition equipment mostly employs single-parameter control or few-parameter linkage control methods. The control logic primarily adjusts based on feedback from currently measured temperature, flow rate, or pressure deviations. When a parameter fluctuates, the system typically corrects for that parameter first, then observes subsequent changes in other parameters. While this type of control can complete basic adjustments, it fails to adequately utilize the dynamic coupling relationships between multiple parameters.

[0088] Because temperature, flow rate, and pressure interact during deposition, a change in one parameter can easily trigger a chain reaction of fluctuations in other parameters. Correcting one parameter alone may cause other parameters to continue deviating from the target state, resulting in lag in control response and repeated fluctuations in process conditions. This is especially true when heat loss is significant at the furnace edge, leading to more unbalanced temperature field distribution, regional differences in deposit thickness and density, and consequently, poor process stability during chemical vapor deposition.

[0089] The deposition parameter control method provided in this application shifts the focus of control during the deposition process from single parameter correction to the coordinated maintenance of process conditions. It first collects the current chamber temperature and pressure within the reaction chamber, then identifies disturbance parameters from the relationship between these two values ​​to determine which process parameters will be affected by the current fluctuation. The reaction chamber, gas supply system, temperature measuring device, and pressure detection device constitute the basis for continuous monitoring and regulation, ensuring that disturbance identification is applied to the actual deposition process.

[0090] After identifying the source of the disturbance, a set of compensation adjustment amounts is pre-determined for the target process parameters affected by the disturbance, and a feedforward compensation signal is generated accordingly. This ensures that the target process parameters are adjusted synchronously when the disturbance occurs, maintaining a stable process state. This processing approach compresses the propagation time of parameter chain fluctuations and reduces the impact of multi-parameter coupled interference on temperature field uniformity and deposition stability.

[0091] The technical solution of this application and how the technical solution of this application solves the above-mentioned technical problems are described in detail below with specific embodiments. These specific embodiments can be combined with each other, and the same or similar concepts or processes may not be described again in some embodiments. The embodiments of this application will now be described with reference to the accompanying drawings.

[0092] Figure 3 This is a schematic flowchart illustrating a deposition parameter control method provided in this application. Please refer to [link / reference]. Figure 3 The method may include:

[0093] S301. Collect the current chamber temperature and current chamber pressure within the reaction chamber during the deposition process.

[0094] The execution entity in this application embodiment can be a controller or a deposition parameter control device set in the controller. The deposition parameter control device can be implemented by software or by a combination of software and hardware.

[0095] The reaction chamber is a closed process space that carries out the chemical vapor deposition process. The deposition reaction, gas exchange, and heat transfer all take place in this space.

[0096] The current cavity temperature reflects the real-time thermal state within the reaction chamber, and the current cavity pressure reflects the real-time pressure state within the reaction chamber. Together, they constitute the basic input parameters for subsequent disturbance identification.

[0097] Temperature and pressure readings are generated during deposition within the reaction chamber to characterize changes in process conditions.

[0098] The current chamber temperature can be obtained through a conventional temperature detection unit, and the current chamber pressure can be obtained through a conventional pressure detection unit, as long as valid detection data reflecting the state inside the reaction chamber can be continuously output. For example, a conventional temperature detection unit can be a thermocouple.

[0099] The simultaneous acquisition of temperature and pressure enables the control unit to obtain coupled state data at the same process moment, rather than independent measurement results that are out of sync.

[0100] For operating conditions where the furnace edge has large heat loss, fluctuating gas supply status, or changes in extraction capacity, there is often a correlation between the current cavity temperature and the current cavity pressure at the same moment, and it is difficult to accurately identify the source of disturbance by relying on a single parameter.

[0101] This application establishes a unified time reference and continuously updates the detection results during the data acquisition phase, providing a directly processable data basis for subsequently determining the disturbance parameters based on the current cavity temperature and pressure, thereby making the process state characterization during the deposition process continuous and comparable.

[0102] S302. Determine the disturbance parameters based on the current cavity temperature and current cavity pressure.

[0103] The disturbance parameter is used to characterize the actual disturbance caused by changes in the current cavity temperature and pressure.

[0104] The current cavity temperature and current cavity pressure are used as input parameters to characterize the current process state. The changes in the state of these two parameters are analyzed, and the disturbance parameters are determined accordingly.

[0105] In some implementations, the disturbance parameters can also be identified by combining the changes in the current cavity temperature and current cavity pressure during continuous sampling.

[0106] The current chamber temperature and pressure are transformed from detected quantities into disturbance characteristics that can drive control actions, enabling the identification of abnormal operating conditions before process deviations escalate. Especially in deposition environments with significant multi-parameter coupling, relying solely on temperature or pressure may misinterpret cascading fluctuations as independent deviations. However, by jointly determining the disturbance parameters using the current chamber temperature, current chamber pressure, and their changing relationships, the abnormal operating conditions that need to be addressed can be abstracted into a unified control object, thus providing a clear input for subsequent calculations of the compensation and adjustment set.

[0107] S303. Based on the disturbance parameters, determine the set of compensation adjustment amounts, which is used to indicate the compensation amount for at least one target process parameter affected by the disturbance parameters.

[0108] The target process parameters are the control objects that need to be compensated and adjusted under the influence of disturbance parameters.

[0109] The set of compensation adjustment amounts is used to convert disturbance parameters into executable compensation requirements and form quantitative correction instructions for each target process parameter.

[0110] In practice, a correspondence between disturbance parameters and target process parameters is established in advance. Once the disturbance parameters are determined, the compensation amount for at least one target process parameter is determined based on this correspondence, and the compensation amounts are organized into a set of compensation adjustment amounts according to a unified data structure.

[0111] The compensation adjustment set includes at least the compensation object identifier, compensation direction, compensation amplitude, and effective time. The compensation direction is used to indicate whether the target process parameter is increased or decreased, the compensation amplitude is used to indicate the size of the adjustment, and the effective time is used to indicate the synchronous start time of each compensation action.

[0112] Instead of simply correcting a parameter after it deviates from its set, the control unit directly calculates the synchronous compensation requirement for at least one target process parameter affected by disturbance propagation. This results in a set of compensation adjustments that already includes multi-parameter linkage correction relationships, enabling subsequent feedforward compensation signals to coordinately adjust multiple execution objects even before disturbance propagation is complete.

[0113] S304. Based on the set of compensation adjustment amounts, generate a feedforward compensation signal so that the target process parameters are adjusted synchronously when disturbance parameters are generated, so as to maintain the process state.

[0114] The feedforward compensation signal is a control signal that drives the target process parameters to make compensation adjustments in advance or synchronously when the disturbance parameters are generated. It is the direct output of the set of compensation adjustment amounts to the execution layer of the deposition equipment.

[0115] After obtaining the set of compensation adjustment amounts, a corresponding feedforward compensation signal is generated according to the relationship between the target process parameters and the corresponding execution object, and then sent to the corresponding execution object.

[0116] Specifically, the compensation direction and compensation amplitude in the compensation adjustment set are converted into setpoint increments or control increments that can be identified by the execution object, and issued at a unified time so that multiple target process parameters are adjusted synchronously.

[0117] In one possible embodiment, the feedforward compensation signal is generated and output within one control cycle after the disturbance parameters are determined.

[0118] After outputting the feedforward compensation signal, the system continues to collect the current cavity temperature and pressure in real time, and dynamically updates the disturbance parameters and compensation adjustment set based on the new detection results. When the disturbance weakens, the compensation amplitude corresponding to the feedforward compensation signal is gradually withdrawn. When the disturbance persists or further expands, the feedforward compensation signal continues to be corrected according to the updated set.

[0119] For example, the feedforward compensation signal can be superimposed with the original closed-loop control signal to form a composite control quantity, where the closed-loop control is used to eliminate residual deviations, and the feedforward compensation is used to counteract the propagation effects of disturbances in advance when they occur.

[0120] The deposition parameter control method provided in this application collects the current chamber temperature and pressure within the reaction chamber during deposition. Based on these parameters, it determines disturbance parameters, establishes a set of compensation adjustment values, and generates a feedforward compensation signal. In this application, the temperature and pressure states within the reaction chamber are simultaneously collected to obtain disturbance parameters characterizing abnormal operating conditions. These disturbance parameters are then converted into a set of compensation adjustment values ​​for at least one target process parameter, which is subsequently converted into a feedforward compensation signal. This processing path enables the target process parameter to be adjusted synchronously when disturbance parameters are generated, compressing the transmission time of chain fluctuations between temperature, pressure, and related process states. Even when heat loss at the furnace edge is significant or atmospheric conditions fluctuate, the continuous stability of the process state within the reaction chamber can be maintained, and the deposition layer thickness and density remain within a controlled range.

[0121] Figure 4 A schematic flowchart illustrating another deposition parameter control method provided in this application. Please refer to... Figure 4 In this embodiment Figure 3 Based on the embodiments, the method may include:

[0122] S401. Collect the current chamber temperature and current chamber pressure within the reaction chamber during the deposition process.

[0123] The execution process of S401 can be found in the execution process of S301, and will not be repeated here.

[0124] S402. Obtain the temperature reference curve and pressure reference curve corresponding to the deposition process type.

[0125] After receiving the current cavity temperature and current cavity pressure, the system first retrieves the corresponding temperature reference curve and pressure reference curve from the process database based on the current deposition process type.

[0126] Temperature and pressure reference curves can be stored as piecewise functions, discrete sampling point sequences, or tabular data, facilitating rapid retrieval within the control cycle.

[0127] S403. Based on the temperature reference curve and the pressure reference curve, determine the temperature deviation corresponding to the current cavity temperature and the pressure deviation corresponding to the current cavity pressure.

[0128] Based on the current deposition time, find the corresponding temperature and pressure reference values ​​on the two reference curves respectively.

[0129] The temperature deviation is obtained by subtracting the current cavity temperature from the temperature reference value, and the pressure deviation is obtained by subtracting the current cavity pressure from the pressure reference value. The absolute values ​​of the two are then used to determine a threshold.

[0130] In one possible implementation, based on the temperature reference curve and the pressure reference curve, the temperature deviation corresponding to the current cavity temperature and the pressure deviation corresponding to the current cavity pressure are determined, including: determining the cavity temperature reference value and the cavity pressure reference value corresponding to the current deposition time in the temperature reference curve and the pressure reference curve; determining the difference between the current cavity temperature and the cavity temperature reference value as the temperature deviation; and determining the difference between the current cavity pressure and the cavity pressure reference value as the pressure deviation.

[0131] In practice, temperature and pressure reference curves corresponding to the deposition process type are pre-stored. These curves can be obtained from process formulations, historical stable batch data, or calibration experiments, and are established with time as the x-axis and the corresponding chamber temperature and chamber pressure as the y-axis.

[0132] The current deposition time can be determined by the system clock, process timer, or the running sequence signal of the reaction chamber. After the current chamber temperature and current chamber pressure are acquired, the corresponding chamber temperature reference value and chamber pressure reference value are obtained by searching or interpolating between the two reference curves based on the current time. Then, the temperature deviation and pressure deviation are obtained by subtracting the chamber temperature reference value from the current chamber temperature and the chamber pressure reference value from the current chamber pressure, respectively.

[0133] If the reference curve consists of discrete sampling points, linear interpolation can be used to determine the reference value to ensure the smoothness of the deviation calculation over a continuous deposition period. Other implementation methods can also be chosen for the curve storage format and interpolation method, and this application does not limit these options.

[0134] In this embodiment, the current deposition time is used as the time reference. The corresponding cavity temperature and pressure reference values ​​are obtained by interpolation or retrieval from the reference curve, and the difference between the measured values ​​and the reference values ​​is calculated. A unified time coordinate system is used to accurately align the real-time detection data with the standard process trajectory, eliminating deviation calculation errors caused by sampling timing misalignment. This ensures that the temperature and pressure deviations accurately reflect the degree of deviation of the current cavity state from the process reference state, providing a unified and reliable data foundation for subsequent disturbance parameter identification and feedforward compensation signal generation, and improving the matching accuracy of multi-parameter linkage control.

[0135] In one possible implementation, the current cavity temperature includes the upper furnace temperature and the lower furnace temperature within the reaction chamber cavity; the cavity temperature reference value includes the upper furnace temperature reference value and the lower furnace temperature reference value; the difference between the current cavity temperature and the cavity temperature reference value is determined as the temperature deviation, including: determining the first deviation between the upper furnace temperature and the upper furnace temperature reference value and the second deviation between the lower furnace temperature and the lower furnace temperature reference value as the temperature deviation.

[0136] The reaction chamber is equipped with temperature measuring units corresponding to the upper and lower furnace chambers respectively. The temperature measuring units can be thermocouples, infrared temperature probes or fiber optic temperature measuring components, and transmit the collected zone temperature signals to the control unit.

[0137] The control unit reads the upper furnace temperature reference value and the lower furnace temperature reference value according to the current deposition time, calculates the difference between the upper furnace temperature and its reference value and the difference between the lower furnace temperature and its reference value, and then inputs the two as temperature deviations into the subsequent disturbance identification and compensation control module.

[0138] The model of the temperature measuring unit can be selected according to the furnace structure and the number of temperature zones. In practical applications, other models can also be selected for this component, and this application does not limit this.

[0139] In this embodiment, the current cavity temperature is refined from a single overall quantity into two regional quantities: the upper and lower furnace chambers. This allows the control unit to identify temperature deviations in different furnace chamber regions and generate deviation inputs that more closely match the actual thermal field distribution. When local fluctuations occur in the upper or lower furnace chamber, the temperature deviation directly reflects the degree of deviation in each zone, thus providing a basis for determining subsequent compensation and adjustment amounts.

[0140] In this embodiment, the current cavity temperature is decomposed into upper furnace temperature and lower furnace temperature. Reference values ​​are obtained for each, and a first deviation and a second deviation are calculated. The deviations of the two zones are used together as the temperature deviation input. Based on the differences in thermal radiation and convection characteristics between the upper and lower regions of the furnace, the non-uniformity of the spatial distribution of the thermal field is independently characterized by zoned temperature measurement. This ensures that the temperature deviation no longer represents only a single-point error, but also includes the zoned errors of the upper and lower furnaces. This allows for a more accurate reflection of the non-uniform changes in the thermal field within the reaction chamber, providing a more stable control input for subsequent differentiated compensation and improving the spatial targeting of thermal field regulation.

[0141] S404. In response to the absolute value of the temperature deviation being greater than a preset temperature difference and / or the absolute value of the pressure deviation being greater than a preset pressure difference, determine the disturbance parameters.

[0142] When the absolute value of the temperature deviation is greater than the preset temperature difference value, and / or the absolute value of the pressure deviation is greater than the preset pressure difference value, it is determined that there is a disturbance in the current cavity that requires linkage compensation, and the disturbance parameter is used as the input for the subsequent compensation adjustment set.

[0143] The preset temperature difference and preset pressure difference can be pre-configured according to different deposition process types to adapt to different thermal field and atmosphere control accuracy requirements.

[0144] By mapping the current chamber temperature and pressure to the corresponding process reference curves, the system can simultaneously identify deviations from the process baseline. By filtering out minor fluctuations through thresholds, the system ensures that disturbance parameters are only confirmed when the temperature or pressure deviation reaches a preset condition, thus providing a stable basis for subsequent feedforward compensation.

[0145] In this embodiment, the corresponding temperature and pressure reference curves are retrieved according to the deposition process type. The reference value is extracted based on the current deposition time and the difference between it and the measured value is calculated to obtain the deviation. A threshold is set to compare the absolute value of the deviation; only deviations exceeding the threshold are confirmed as valid disturbance parameters. Using the standard process trajectory as a benchmark, a threshold filtering mechanism eliminates normal process fluctuations and measurement noise, ensuring the accuracy and triggering timing of disturbance identification. This avoids ineffective control actions caused by minor fluctuations, ensuring that disturbance identification and subsequent feedforward compensation only activate when there is a genuine deviation from the process benchmark state, reducing the system's false trigger rate and improving the effectiveness and consistency of deposition process parameter control.

[0146] S405. Based on the disturbance parameters, determine the temperature compensation amount corresponding to the current cavity temperature and the pressure compensation amount corresponding to the current cavity pressure.

[0147] The compensation amount for at least one target process parameter includes the temperature compensation amount corresponding to the current cavity temperature, the pressure compensation amount corresponding to the current cavity pressure, and the airflow compensation amount corresponding to the process airflow rate.

[0148] After identifying the disturbance parameters, corresponding temperature compensation and pressure compensation are established based on the disturbance parameters and the temperature control model and pressure control model, respectively. The temperature compensation can be used to correct the heating output of the temperature control component, and the pressure compensation can be used to correct the exhaust intensity of the exhaust pipe.

[0149] S406. Determine the airflow compensation amount corresponding to the process airflow rate based on the temperature compensation amount corresponding to the current cavity temperature and the pressure compensation amount corresponding to the current cavity pressure.

[0150] The temperature compensation and pressure compensation are input into the airflow coupling model to calculate the airflow compensation corresponding to the process airflow flow rate, and the airflow compensation is converted into the flow correction value of the air supply unit.

[0151] The coupling model can be implemented using linear mapping, lookup table mapping, or fitting relationships based on empirical parameters of the deposition process. In practical applications, other forms of the model can also be selected, and this application does not limit them.

[0152] When the temperature compensation indicates that the thermal field needs to be increased, the airflow compensation can be used to synchronously correct the flow rate of the process gas entering the reaction chamber, so that the reaction rate fluctuation caused by temperature changes can be balanced in a coordinated manner. When the pressure compensation indicates that the current chamber pressure needs to be adjusted back, the airflow compensation can be used in conjunction with the pressure-side adjustment results to coordinately correct the gas supply, so that the temperature, pressure and process airflow flow rate can maintain a consistent control relationship.

[0153] By combining temperature compensation, pressure compensation, and airflow compensation into a set of compensation adjustment values, the system can simultaneously perform multi-parameter linkage correction when disturbances occur, reducing the chain offset caused by single-parameter correction.

[0154] In this embodiment, the disturbance parameters are mapped to temperature compensation and pressure compensation, and these two are used as inputs to a coupled model to derive the airflow compensation corresponding to the process airflow rate. These three parameters together constitute a set of compensation adjustment values. Based on the gas-thermal-mechanical multi-physics coupling relationship, the effects of temperature and pressure disturbances are quantified through a mathematical model and transmitted to the flow control dimension, achieving cross-parameter compensation linkage. When a disturbance occurs, multi-parameter linkage correction of temperature, pressure, and process airflow rate is simultaneously completed, reducing the chain shifts caused by single-parameter corrections, maintaining dynamic matching of the thermal field, pressure field, and process airflow field, and reducing the impact of coupling interference on deposition uniformity.

[0155] S407. Based on the temperature compensation amount corresponding to the current cavity temperature, generate the feedforward compensation signal corresponding to the air supply device of the reaction chamber.

[0156] After receiving the set of compensation adjustment amounts, the temperature compensation amount is mapped to the drive command of the air supply device. The temperature compensation amount directly acts on the air supply device, so that the sensible heat carried by the supplied gas compensates for the current cavity temperature.

[0157] The temperature compensation amount corresponding to the current cavity temperature includes the temperature compensation amount corresponding to the upper furnace temperature and the temperature compensation amount corresponding to the lower furnace temperature.

[0158] In one possible implementation, a feedforward compensation signal corresponding to the first air supply device of the reaction chamber is generated based on the temperature compensation amount corresponding to the upper furnace temperature; and a feedforward compensation signal corresponding to the second air supply device of the reaction chamber is generated based on the temperature compensation amount corresponding to the lower furnace temperature.

[0159] The first air supply device is the air supply device corresponding to the upper furnace chamber inside the reaction chamber, and the second air supply device is the air supply device corresponding to the lower furnace chamber inside the reaction chamber.

[0160] Based on the temperature compensation amounts corresponding to the upper and lower furnace chambers, the feedforward compensation signals of the two air supply devices are calculated respectively, and the corresponding signals are sent to the first and second air supply devices to achieve differentiated synchronous air supply adjustment of the upper and lower thermal fields.

[0161] Since the upper and lower furnace chambers are located in different positions, their heat dissipation conditions and temperature response characteristics are different. After adopting the zoned air supply method, the two compensation actions can be applied to the corresponding hot zones respectively, so that the current cavity temperature correction is more in line with the actual thermal field distribution.

[0162] In this embodiment, the temperature compensation amounts of the upper and lower furnace chambers are independently generated into feedforward compensation signals for the first and second make-up air devices, respectively. The make-up air volume in the corresponding areas is adjusted by differentiating the opening degree. The sensible heat carried by the make-up airflow is directly applied to specific furnace chamber areas, and combined with the airflow shear effect, local thermal compensation and active flow field shaping are achieved. This ensures that the make-up air adjustment in different height areas corresponds one-to-one with the thermal field deviation, improving the targeting and synchronicity of temperature compensation. The edge flow field is optimized through the airflow shear effect, quickly eliminating radial temperature differences and maintaining a more uniform and stable temperature distribution in the reaction chamber.

[0163] The feedforward compensation signal corresponding to the air supply device can drive the electric actuator of the air supply device to precisely adjust the opening of the air supply valves on both sides. By adjusting the air supply volume differently, the sensible heat of the supplied gas is used to actively compensate for the edge area. At the same time, the edge flow field is optimized by the airflow shear effect, thereby quickly eliminating the radial temperature difference, making the edge temperature approach the center temperature, and controlling the overall temperature difference of the deposited material surface within ±5℃, ensuring a high degree of uniformity of the deposited material surface temperature.

[0164] S408. Based on the pressure compensation amount corresponding to the current cavity pressure, generate the feedforward compensation signal corresponding to the exhaust pipe of the reaction chamber.

[0165] The pressure compensation amount is mapped to the valve opening or exhaust power command on the exhaust pipe. The pressure compensation amount acts directly on the exhaust pipe to match the exhaust capacity with the current pressure deviation.

[0166] The pressure compensation amount is mapped to the valve opening command of the automatic pressure regulating valve on the exhaust pipe; the pressure compensation amount is a value calculated internally by the controller, and the feedforward compensation signal generated based on the pressure compensation amount acts on the automatic pressure regulating valve on the exhaust pipe to match the exhaust capacity with the current pressure deviation.

[0167] Adjusting the opening of the make-up air valve in the make-up air device causes instantaneous changes in the total amount of gas inside the reaction chamber, leading to pressure fluctuations within the chamber. To eliminate this coupling interference, a pressure sensor monitors the actual pressure value inside the reaction chamber in real time.

[0168] Based on the pressure deviation, the opening of the automatic pressure regulating valve on the exhaust pipe can be adjusted in real time using a PID algorithm: when the pressure rises due to increased air supply, the automatic pressure regulating valve opens wider to accelerate exhaust, and vice versa.

[0169] Through high-frequency dynamic response, it is ensured that the process pressure in the reaction chamber is always maintained within the target range corresponding to the pressure set value during the temperature adjustment process of the air supply, so as to realize the coupled linkage compensation control of temperature regulation and pressure stability.

[0170] S409. Based on the compensation adjustment amount corresponding to the process gas flow rate, generate the feedforward compensation signal corresponding to the gas supply system of the reaction chamber.

[0171] The compensation adjustment corresponding to the process gas flow rate is mapped to the mass flow rate setpoint of the gas supply system. The compensation adjustment corresponding to the process gas flow rate directly acts on the gas supply system, ensuring that the precursor or carrier gas flow rate is corrected before disturbance transmission.

[0172] During the dynamic adjustment of temperature and pressure, the thermal field distribution and gas residence time within reaction chamber 3 undergo slight changes, which in turn affect the deposition rate and quality. At this point, based on the built-in coupled compensation model, and combined with real-time temperature compensation and pressure adjustment trends, a gas flow correction coefficient is calculated to autonomously fine-tune the flow rate setpoint.

[0173] The PLC controller fine-tunes the settings of each mass flow controller (MFC) in the gas supply system 1 accordingly. By appropriately adjusting the flow rates of the precursor and carrier gas, it matches the current thermal and flow field conditions to ensure that the deposition reaction proceeds at the optimal stoichiometry.

[0174] The three feedforward compensation signals can be generated by the same control unit based on preset compensation coefficients and equipment calibration curves. The three independent feedforward compensation channels for temperature, pressure, and flow can respond synchronously to operating condition disturbances, achieving dynamic linkage and matching control of the thermal field, pressure field, and process airflow field.

[0175] In this embodiment, the temperature, pressure, and airflow compensation quantities in the compensation adjustment set are mapped to drive commands for the air supply device, exhaust pipe, and air supply system, respectively, and simultaneously generated as feedforward compensation signals. The decoupled compensation requirements directly drive the corresponding actuators, transforming the abstract compensation quantities into actual control actions of the physical equipment. The three feedforward compensation signals respond independently and synchronously to operating condition disturbances, achieving dynamic linkage and matching control of the thermal field, pressure field, and process airflow field. This reduces the hysteresis response after single-parameter correction, keeps the process state within the reaction chamber relatively stable, and improves parameter consistency and forming stability during the deposition process.

[0176] The deposition parameter control method provided in this embodiment can collect the current chamber temperature and pressure in the reaction chamber during the deposition process, determine the disturbance parameter based on the current chamber temperature and pressure, and then determine a set of compensation adjustment amounts to indicate the compensation amount of at least one target process parameter affected by the disturbance parameter based on the disturbance parameter. Based on the set of compensation adjustment amounts, a feedforward compensation signal is generated synchronously and the target process parameter is adjusted. This method can achieve synchronous compensation of relevant process parameters when the disturbance parameter is generated, reduce the coupling interference and control lag between temperature, flow rate and pressure, thereby maintaining the stability of the deposition process, improving temperature field uniformity, deposition stability and batch consistency.

[0177] For example, when the flow setpoint changes, the system automatically predicts its impact on the reaction chamber pressure and furnace temperature, and synchronously outputs compensation signals to the pressure regulating valve and the make-up air valve. The entire coordinated control cycle does not exceed 100ms, ensuring that temperature, flow, and pressure are always in the optimal state of dynamic matching. Steady-state temperature fluctuation is ≤±2℃, and pressure fluctuation is ≤±1%, with better anti-disturbance capability than the traditional PID dual-parameter scheme. As a comparison, under the same disturbance conditions, if the three closed loops operate independently without coupling compensation, the system takes about 90s to reach steady state, the pressure overshoot reaches +16%, and the temperature and pressure loops experience continuous oscillations.

[0178] One possible implementation also includes: during the deposition process, acquiring the cavity temperature, cavity pressure, and process gas flow rate; and generating a process report based on the cavity temperature, cavity pressure, and process gas flow rate during the deposition process.

[0179] Process reports are used to summarize data such as temperature, pressure, and process gas flow rate during the deposition process. Their function is to support process traceability, quality analysis, and process optimization.

[0180] In practice, the cavity temperature, cavity pressure, and process gas flow rate collected during the deposition cycle can be written into a report in chronological order, and can also be recorded together with the set time, batch number, and equipment operating status for subsequent viewing and analysis.

[0181] The reaction chamber is equipped with a temperature detection unit, a pressure detection unit, and a flow detection unit. The temperature detection unit can be composed of a thermocouple or an infrared temperature measurement component, the pressure detection unit can be a high-temperature pressure sensor, and the flow detection unit can be a mass flow meter. The collected data is uniformly connected to the control unit and timestamped.

[0182] Process reports can be generated in real time or in batches based on historical sampling data after deposition. The report content can include statistical results, peak values, average values, and corresponding time period changes of temperature curves, pressure curves, and flow curves. The report file can be written to local storage or uploaded to the host computer.

[0183] This process report continuously collects information on chamber temperature, chamber pressure, and process gas flow rate during the deposition process, and organizes the scattered operational data into a traceable process record, enabling the complete preservation and retrieval of key process states during deposition. By correlating and outputting the above data, it can provide a basis for subsequent batch comparison, anomaly location, and process parameter correction.

[0184] This implementation method continuously collects cavity temperature, cavity pressure, and process gas flow rate during the deposition process. Multi-source operational data is synchronously integrated using timestamp association technology, generating structured process reports by process time period or batch. Based on data bus communication and synchronous sampling mechanisms, discrete process parameters are centrally and standardizedly recorded, enabling the complete preservation and retrieval of key process states during deposition. This facilitates retrospective analysis of temperature, pressure, and flow rate trends, providing a basis for subsequent batch comparisons, anomaly location, and process parameter correction, thereby improving the integrity and traceability of process data.

[0185] In one possible implementation, the host computer has a built-in process template library, supporting one-click recipe management and process traceability. During the deposition process, the host computer receives real-time parameters from the controller via a data bus, records the process parameter change curves and data logs throughout the process, and automatically summarizes and generates process reports after deposition is completed. This digital traceability mechanism reduces manual intervention, ensures consistency of deposition parameters across different batches, and improves process optimization efficiency through data recording and analysis functions, significantly enhancing product yield.

[0186] For example, high-purity quartz glass ingots are synthesized via chemical vapor deposition using silicon tetrachloride as the raw material and an oxyhydrogen flame as the heat source. Before deposition, the operator selects the relevant product type for quartz ingot deposition on the host computer. The host computer's built-in process template library automatically matches and generates a complete process formula, which includes the target temperature of the reaction chamber, the target flow rate of the process gas, and the target pressure parameters of the chamber. After deposition starts, based on the closed-loop compensation mechanism of this invention, thermocouples collect the temperatures of the upper and lower furnace chambers in real time. If the PLC controller detects that the temperature difference exceeds the set threshold, after calculation by the coupled compensation model, it drives the make-up air system to differentially adjust the opening of the corresponding side make-up air valve, using the sensible heat of the make-up air to actively compensate for the edge area.

[0187] Adjusting the air supply opening can easily cause pressure disturbances within the cavity. A pressure sensor collects and reflects the actual pressure in the cavity in real time. The PLC controller generates a feedforward compensation signal based on the pressure compensation amount, synchronously adjusting the opening of the automatic pressure regulating valve in the exhaust pipe to stabilize the cavity pressure within ±1% of the set value. The PLC controller, relying on a coupled compensation model and combining real-time temperature and pressure adjustment trends, calculates a gas flow correction coefficient to fine-tune the gas supply system's flow rate to match the current thermal field state. After several closed-loop iterations, the edge temperature recovers to near the target value, and the maximum temperature difference between deposition surface regions decreases to within 5℃.

[0188] The silica glass ingot was continuously deposited to the target height, and then allowed to cool naturally before being unloaded. The optical uniformity of the ingot was tested using laser interferometry, and the results showed that the overall optical uniformity was better than that of the ingot. This meets the application requirements of aerospace, high-power laser technology, and precision optics. The deposited body is free of bubbles and impurities throughout its entire aperture, with stress birefringence ≤1.5nm / cm, significantly improving upon traditional edge-compensation-free solutions (where optical uniformity is only...). Significant improvement.

[0189] Figure 5 This is a schematic diagram of the architecture of a deposition parameter control method provided in this application. Please refer to [link / reference]. Figure 5 The architecture includes a gas supply system, a reaction chamber, a make-up air duct, a temperature measuring thermocouple, an exhaust duct, a PLC controller, and a host computer. The gas supply system supplies process gas to the reaction chamber, which is connected to the make-up air duct and the exhaust duct, respectively. The temperature measuring thermocouple collects the temperature signal of the reaction chamber, and a pressure detection component is configured on the exhaust duct to collect the pressure signal of the chamber.

[0190] The temperature and pressure detection signals collected by the thermocouples and exhaust pipes are sent to the PLC controller. The PLC controller also receives flow detection signals from the gas supply system. Data interaction and linkage control are realized between the PLC controller and the host computer. The PLC controller has a built-in coupling compensation model, which identifies disturbance parameters based on the collected real-time process parameters of flow, temperature and pressure, calculates the parameter compensation adjustment set, and generates a feedforward compensation signal. The feedforward compensation signal is output to the actuators corresponding to the gas supply system and the make-up air pipe, as well as the pressure regulating valve of the exhaust pipe, to realize the coupled linkage compensation control of flow, temperature and pressure.

[0191] The host computer is used to select the deposition process type, generate and issue process recipes, receive process operation data returned by the PLC controller, and complete parameter display, log recording and process report generation.

[0192] Figure 6 This is a schematic diagram of a deposition parameter control device provided in this application, as shown below. Figure 6As shown, the deposition parameter control device 600 includes an acquisition module 601, a first determination module 602, a second determination module 603, and a first generation module 604, wherein...

[0193] The acquisition module 601 is used to acquire the current chamber temperature and current chamber pressure within the reaction chamber during the deposition process;

[0194] The first determining module 602 is used to determine the disturbance parameters based on the current cavity temperature and the current cavity pressure;

[0195] The second determining module 603 is used to determine a set of compensation adjustment amounts based on the disturbance parameters. The set of compensation adjustment amounts is used to indicate the compensation amount for at least one target process parameter affected by the disturbance parameters.

[0196] The first generation module 604 is used to generate a feedforward compensation signal based on the set of compensation adjustment amounts, so that the target process parameters are adjusted synchronously when the disturbance parameters are generated, so as to maintain the process state.

[0197] In one possible implementation, the first determining module 602 is specifically used for:

[0198] Obtain the temperature and pressure reference curves corresponding to the deposition process type;

[0199] Based on the temperature reference curve and the pressure reference curve, determine the temperature deviation corresponding to the current cavity temperature and the pressure deviation corresponding to the current cavity pressure;

[0200] In response to the absolute value of the temperature deviation being greater than a preset temperature difference and / or the absolute value of the pressure deviation being greater than a preset pressure difference, the disturbance parameters are determined.

[0201] In one possible implementation, the first determining module 602 is specifically used for:

[0202] Determine the cavity temperature reference value and cavity pressure reference value corresponding to the current deposition time from the temperature reference curve and pressure reference curve;

[0203] The difference between the current cavity temperature and the cavity temperature reference value is defined as the temperature deviation;

[0204] The difference between the current chamber pressure and the chamber pressure reference value is defined as the pressure deviation.

[0205] In one possible implementation, the current cavity temperature includes the upper furnace temperature and the lower furnace temperature within the reaction chamber; the cavity temperature reference value includes the upper furnace temperature reference value and the lower furnace temperature reference value; the first determining module 602 is specifically used for:

[0206] The first deviation between the upper furnace temperature and the upper furnace temperature reference value and the second deviation between the lower furnace temperature and the lower furnace temperature reference value are defined as temperature deviations.

[0207] In one possible implementation, the compensation amount for at least one target process parameter includes a temperature compensation amount corresponding to the current cavity temperature, a pressure compensation amount corresponding to the current cavity pressure, and a gas flow compensation amount corresponding to the process gas flow rate; the second determining module 603 is specifically used for:

[0208] Based on the disturbance parameters, determine the temperature compensation amount corresponding to the current cavity temperature and the pressure compensation amount corresponding to the current cavity pressure;

[0209] Based on the temperature compensation amount corresponding to the current cavity temperature and the pressure compensation amount corresponding to the current cavity pressure, determine the airflow compensation amount corresponding to the process airflow rate.

[0210] In one possible implementation, the first generation module 604 is specifically used for:

[0211] Based on the temperature compensation amount corresponding to the current cavity temperature, a feedforward compensation signal corresponding to the air supply device of the reaction chamber is generated.

[0212] Based on the pressure compensation amount corresponding to the current cavity pressure, a feedforward compensation signal corresponding to the exhaust pipe of the reaction chamber is generated.

[0213] Based on the compensation adjustment amount corresponding to the process gas flow rate, a feedforward compensation signal corresponding to the gas supply system of the reaction chamber is generated.

[0214] In one possible implementation, the temperature compensation amount corresponding to the current cavity temperature includes the temperature compensation amount corresponding to the upper furnace temperature and the temperature compensation amount corresponding to the lower furnace temperature; the first generation module 604 is specifically used for:

[0215] Based on the temperature compensation amount corresponding to the upper furnace temperature, a feedforward compensation signal corresponding to the first air supply device in the reaction chamber is generated.

[0216] Based on the temperature compensation amount corresponding to the lower furnace temperature, a feedforward compensation signal corresponding to the second air supply device of the reaction chamber is generated.

[0217] The first air supply device is the air supply device corresponding to the upper furnace chamber inside the reaction chamber, and the second air supply device is the air supply device corresponding to the lower furnace chamber inside the reaction chamber.

[0218] In one possible implementation, a second generation module is also included. The second generation module is used for:

[0219] During the deposition process, the cavity temperature, cavity pressure, and process gas flow rate are obtained.

[0220] A process report is generated based on the cavity temperature, cavity pressure, and process gas flow rate during the deposition process.

[0221] The deposition parameter control device provided in this embodiment can execute the method provided in the above method embodiment. Its implementation principle and technical effect are similar, and will not be described in detail here.

[0222] Figure 7 A schematic diagram of the structure of an electronic device provided in this application. Please refer to [link / reference]. Figure 7 The electronic device 700 may include a processor 701 and a memory 702. Exemplarily, the processor 701 and the memory 702 are interconnected via a bus 703.

[0223] Memory 702 stores instructions executed by the computer;

[0224] The processor 701 executes computer execution instructions stored in the memory 702, causing the processor 701 to perform a midpoint potential balancing method for suppressing the influence of common-mode voltage as described in the above method embodiment.

[0225] Accordingly, embodiments of this application provide a computer-readable storage medium storing computer-executable instructions, which, when executed by a processor, are used to implement the midpoint potential balancing method for suppressing the influence of common-mode voltage as described in the above-described method embodiments.

[0226] Accordingly, embodiments of this application may also provide a computer program product, including a computer program, which, when executed by a processor, can implement the midpoint potential balancing method for suppressing the influence of common-mode voltage as shown in the above method embodiments.

[0227] Those skilled in the art will understand that embodiments of the present invention can be provided as methods, systems, or computer program products. Therefore, the present invention can take the form of a completely hardware embodiment, a completely software embodiment, or an embodiment combining software and hardware aspects. Furthermore, the present invention can take the form of a computer program product embodied on one or more computer-usable storage media (including, but not limited to, disk storage, CD-ROM, optical storage, etc.) containing computer-usable program code.

[0228] This invention is described with reference to flowchart illustrations and / or block diagrams of methods, apparatus (systems), and computer program products according to embodiments of the invention. It will be understood that each block of the flowchart illustrations and / or block diagrams, and combinations of blocks in the flowchart illustrations and / or block diagrams, can be implemented by computer program instructions. These computer program instructions can be provided to a processor of a general-purpose computer, special-purpose computer, embedded processor, or other programmable data processing apparatus to produce a machine, such that the instructions, which execute via the processor of the computer or other programmable data processing apparatus, generate instructions for implementing the flowchart illustrations and / or block diagrams. Figure 1 One or more processes and / or boxes Figure 1 A device that provides the functions specified in one or more boxes.

[0229] These computer program instructions may also be stored in a computer-readable storage medium that can direct a computer or other programmable data processing device to function in a particular manner, such that the instructions stored in the computer-readable storage medium produce an article of manufacture including instruction means, which are implemented in a process Figure 1 One or more processes and / or boxes Figure 1 The function specified in one or more boxes.

[0230] These computer program instructions may also be loaded onto a computer or other programmable data processing equipment to cause a series of operational steps to be performed on the computer or other programmable equipment to produce a computer-implemented process, thereby providing instructions that execute on the computer or other programmable equipment for implementing the process. Figure 1 One or more processes and / or boxes Figure 1 The steps of the function specified in one or more boxes.

[0231] In a typical configuration, a computing device includes one or more processors (CPU), input / output interfaces, network interfaces, and memory.

[0232] Memory may include non-persistent storage in computer-readable media, such as random access memory (RAM) and / or non-volatile memory, such as read-only memory (ROM) or flash RAM. Memory is an example of computer-readable media.

[0233] Computer-readable media includes both permanent and non-permanent, removable and non-removable media that can store information using any method or technology. Information can be computer-readable instructions, data structures, modules of programs, or other data. Examples of computer storage media include, but are not limited to, phase-change memory (PRAM), static random access memory (SRAM), dynamic random access memory (DRAM), other types of random access memory (RAM), read-only memory (ROM), electrically erasable programmable read-only memory (EEPROM), flash memory or other memory technologies, CD-ROM, digital versatile optical disc (DVD) or other optical storage, magnetic tape, magnetic disk storage or other magnetic storage devices, or any other non-transferable medium that can be used to store information accessible by a computing device. As defined herein, computer-readable media does not include transient computer-readable media, such as modulated data signals and carrier waves.

[0234] It should also be noted that the terms "comprising," "including," or any other variations thereof are intended to cover non-exclusive inclusion, such that a process, method, article, or apparatus that comprises a list of elements includes not only those elements but also other elements not expressly listed, or elements inherent to such process, method, article, or apparatus. Unless otherwise specified, an element defined by the phrase "comprising one..." does not exclude the presence of other identical elements in the process, method, article, or apparatus that includes that element.

[0235] The above are merely embodiments of this application and are not intended to limit the scope of this application. Various modifications and variations can be made to this application by those skilled in the art. Any modifications, equivalent substitutions, improvements, etc., made within the spirit and principles of this application should be included within the scope of the claims of this application.

Claims

1. A method for controlling deposition parameters, characterized in that, include: Collect the current chamber temperature and pressure within the reaction chamber during the deposition process; The disturbance parameters are determined based on the current cavity temperature and the current cavity pressure. Based on the disturbance parameters, a set of compensation adjustment amounts is determined, which indicates the amount of compensation for at least one target process parameter affected by the disturbance parameters. Based on the set of compensation adjustment amounts, a feedforward compensation signal is generated so that the target process parameters are adjusted synchronously when the disturbance parameters are generated, so as to maintain the process state.

2. The method according to claim 1, characterized in that, Based on the current cavity temperature and the current cavity pressure, the disturbance parameters are determined, including: Obtain the temperature and pressure reference curves corresponding to the deposition process type; Based on the temperature reference curve and the pressure reference curve, determine the temperature deviation corresponding to the current cavity temperature and the pressure deviation corresponding to the current cavity pressure; The disturbance parameters are determined in response to the absolute value of the temperature deviation being greater than a preset temperature difference value and / or the absolute value of the pressure deviation being greater than a preset pressure difference value.

3. The method according to claim 2, characterized in that, Based on the temperature reference curve and the pressure reference curve, determine the temperature deviation corresponding to the current cavity temperature and the pressure deviation corresponding to the current cavity pressure, including: In the temperature reference curve and the pressure reference curve, determine the cavity temperature reference value and cavity pressure reference value corresponding to the current deposition time; The difference between the current cavity temperature and the cavity temperature reference value is determined as the temperature deviation; The difference between the current cavity pressure and the cavity pressure reference value is determined as the pressure deviation.

4. The method according to claim 3, characterized in that, The current cavity temperature includes the upper furnace temperature and the lower furnace temperature within the reaction chamber; the cavity temperature reference value includes the upper furnace temperature reference value and the lower furnace temperature reference value. The temperature deviation is defined as the difference between the current cavity temperature and the cavity temperature reference value, including: The temperature deviation is defined as the first deviation between the upper furnace temperature and the upper furnace temperature reference value and the second deviation between the lower furnace temperature and the lower furnace temperature reference value.

5. The method according to any one of claims 1-4, characterized in that, The compensation amount of the at least one target process parameter includes the temperature compensation amount corresponding to the current cavity temperature, the pressure compensation amount corresponding to the current cavity pressure, and the airflow compensation amount corresponding to the process airflow rate. Based on the disturbance parameters, a set of compensation adjustment amounts is determined, including: Based on the disturbance parameters, determine the temperature compensation amount corresponding to the current cavity temperature and the pressure compensation amount corresponding to the current cavity pressure; The airflow compensation amount corresponding to the process airflow rate is determined based on the temperature compensation amount corresponding to the current cavity temperature and the pressure compensation amount corresponding to the current cavity pressure.

6. The method according to claim 5, characterized in that, Based on the set of compensation adjustment amounts, a feedforward compensation signal is generated, including: Based on the temperature compensation amount corresponding to the current cavity temperature, a feedforward compensation signal corresponding to the air supply device of the reaction chamber is generated. Based on the pressure compensation amount corresponding to the current cavity pressure, a feedforward compensation signal corresponding to the exhaust pipe of the reaction chamber is generated. Based on the compensation adjustment amount corresponding to the process gas flow rate, a feedforward compensation signal corresponding to the gas supply system of the reaction chamber is generated.

7. The method according to claim 6, characterized in that, The temperature compensation amount corresponding to the current cavity temperature includes the temperature compensation amount corresponding to the upper furnace temperature and the temperature compensation amount corresponding to the lower furnace temperature. Based on the temperature compensation amount corresponding to the current cavity temperature, a feedforward compensation signal corresponding to the air supply device of the reaction chamber is generated, including: Based on the temperature compensation amount corresponding to the upper furnace temperature, a feedforward compensation signal corresponding to the first air supply device of the reaction chamber is generated. Based on the temperature compensation amount corresponding to the lower furnace temperature, a feedforward compensation signal corresponding to the second air supply device of the reaction chamber is generated. The first air supply device is the air supply device corresponding to the upper furnace chamber inside the reaction chamber, and the second air supply device is the air supply device corresponding to the lower furnace chamber inside the reaction chamber.

8. The method according to any one of claims 1-4, characterized in that, Also includes: During the deposition process, the cavity temperature, cavity pressure, and process gas flow rate are obtained. A process report is generated based on the cavity temperature, cavity pressure, and process gas flow rate during the deposition process.

9. A deposition parameter control device, characterized in that, It includes a data acquisition module, a first determination module, a second determination module, and a first generation module, wherein, The acquisition module is used to acquire the current chamber temperature and current chamber pressure within the reaction chamber during the deposition process; The first determining module is used to determine the disturbance parameters based on the current cavity temperature and the current cavity pressure; The second determining module is used to determine a set of compensation adjustment amounts based on the disturbance parameters, wherein the set of compensation adjustment amounts is used to indicate the compensation amount for at least one target process parameter affected by the disturbance parameters; The first generation module is used to generate a feedforward compensation signal based on the set of compensation adjustment amounts, so that the target process parameters are adjusted synchronously when the disturbance parameters are generated, so as to maintain the process state.

10. An electronic device, characterized in that, include: Memory, processor; The memory stores computer-executed instructions; The processor executes computer execution instructions stored in the memory, causing the processor to perform the method as described in any one of claims 1-9.

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